JP2018511180A - コバルト相互接続層及びその上のはんだを備えた金属ボンドパッド - Google Patents

コバルト相互接続層及びその上のはんだを備えた金属ボンドパッド Download PDF

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JP2018511180A
JP2018511180A JP2017550148A JP2017550148A JP2018511180A JP 2018511180 A JP2018511180 A JP 2018511180A JP 2017550148 A JP2017550148 A JP 2017550148A JP 2017550148 A JP2017550148 A JP 2017550148A JP 2018511180 A JP2018511180 A JP 2018511180A
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Prior art keywords
cobalt
bond pad
layer
metal
connection layer
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JP2017550148A
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JP2018511180A5 (https=
Inventor
リンク ヘルムート
リンク ヘルムート
バウアー ゲーノット
バウアー ゲーノット
ツリレ ロベルト
ツリレ ロベルト
シャハトシュナイダー カイアレクサンダー
シャハトシュナイダー カイアレクサンダー
オーテ ミカエル
オーテ ミカエル
ウィーズナー ハールド
ウィーズナー ハールド
Original Assignee
日本テキサス・インスツルメンツ株式会社
テキサス インスツルメンツ インコーポレイテッド
テキサス インスツルメンツ インコーポレイテッド
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Publication of JP2018511180A publication Critical patent/JP2018511180A/ja
Publication of JP2018511180A5 publication Critical patent/JP2018511180A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/42—Vias, e.g. via plugs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44—Conductive materials thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01204—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using temporary auxiliary members, e.g. using sacrificial coatings or handle substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01221—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using local deposition
    • H10W72/01225—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using local deposition in solid form, e.g. by using a powder or by stud bumping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01251—Changing the shapes of bumps
    • H10W72/01257—Changing the shapes of bumps by reflowing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H10W72/01931—Manufacture or treatment of bond pads using blanket deposition
    • H10W72/01938—Manufacture or treatment of bond pads using blanket deposition in gaseous form, e.g. by CVD or PVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H10W72/01951—Changing the shapes of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H10W72/01951—Changing the shapes of bond pads
    • H10W72/01953—Changing the shapes of bond pads by etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/231—Shapes
    • H10W72/232—Plan-view shape, i.e. in top view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/231—Shapes
    • H10W72/234—Cross-sectional shape, i.e. in side view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241—Dispositions, e.g. layouts
    • H10W72/242—Dispositions, e.g. layouts relative to the surface, e.g. recessed, protruding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/29—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/932—Plan-view shape, i.e. in top view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/934—Cross-sectional shape, i.e. in side view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
JP2017550148A 2015-03-23 2016-03-23 コバルト相互接続層及びその上のはんだを備えた金属ボンドパッド Pending JP2018511180A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/665,799 US9960135B2 (en) 2015-03-23 2015-03-23 Metal bond pad with cobalt interconnect layer and solder thereon
US14/665,799 2015-03-23
PCT/US2016/023785 WO2016154315A1 (en) 2015-03-23 2016-03-23 Metal bond pad with cobalt interconnect layer and solder thereon

Publications (2)

Publication Number Publication Date
JP2018511180A true JP2018511180A (ja) 2018-04-19
JP2018511180A5 JP2018511180A5 (https=) 2019-04-04

Family

ID=56975786

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017550148A Pending JP2018511180A (ja) 2015-03-23 2016-03-23 コバルト相互接続層及びその上のはんだを備えた金属ボンドパッド

Country Status (5)

Country Link
US (2) US9960135B2 (https=)
EP (1) EP3275009A4 (https=)
JP (1) JP2018511180A (https=)
CN (1) CN107431000A (https=)
WO (1) WO2016154315A1 (https=)

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US9971970B1 (en) * 2015-04-27 2018-05-15 Rigetti & Co, Inc. Microwave integrated quantum circuits with VIAS and methods for making the same
US10160639B2 (en) 2016-06-27 2018-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure for MEMS Device
US10131541B2 (en) 2016-07-21 2018-11-20 Taiwan Semiconductor Manufacturing Co., Ltd. MEMS devices having tethering structures
US11121301B1 (en) 2017-06-19 2021-09-14 Rigetti & Co, Inc. Microwave integrated quantum circuits with cap wafers and their methods of manufacture
US11183472B2 (en) * 2017-11-28 2021-11-23 Sony Semiconductor Solutions Corporation Semiconductor device and manufacturing method of semiconductor device for improving solder connection strength
US10546852B2 (en) * 2018-05-03 2020-01-28 Qualcomm Incorporated Integrated semiconductor devices and method of fabricating the same
US10840185B2 (en) 2019-03-05 2020-11-17 Texas Instruments Incorporated Semiconductor device with vias having a zinc-second metal-copper composite layer
US12607594B2 (en) 2020-09-03 2026-04-21 Texas Instruments Incorporated ISFET biosensor
CN114765125B (zh) * 2021-01-12 2025-11-25 联华电子股份有限公司 集成电路结构及其制作方法
US11676920B2 (en) 2021-01-26 2023-06-13 United Microelectronics Corp. Semiconductor device and method for fabricating the same
US20230187390A1 (en) * 2021-12-15 2023-06-15 Texas Instruments Incorporated Semiconductor die with dissolvable metal layer

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US20070023919A1 (en) * 2005-07-29 2007-02-01 Mou-Shiung Lin Bonding pad on ic substrate and method for making the same
US20090174069A1 (en) * 2008-01-04 2009-07-09 National Semiconductor Corporation I/o pad structure for enhancing solder joint reliability in integrated circuit devices
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US20040096592A1 (en) * 2002-11-19 2004-05-20 Chebiam Ramanan V. Electroless cobalt plating solution and plating techniques
US20070023919A1 (en) * 2005-07-29 2007-02-01 Mou-Shiung Lin Bonding pad on ic substrate and method for making the same
US20090283903A1 (en) * 2005-12-02 2009-11-19 Nepes Corporation Bump with multiple vias for semiconductor package and fabrication method thereof, and semiconductor package utilizing the same
US20090174069A1 (en) * 2008-01-04 2009-07-09 National Semiconductor Corporation I/o pad structure for enhancing solder joint reliability in integrated circuit devices

Also Published As

Publication number Publication date
US20180218993A1 (en) 2018-08-02
WO2016154315A1 (en) 2016-09-29
US9960135B2 (en) 2018-05-01
CN107431000A (zh) 2017-12-01
EP3275009A4 (en) 2018-10-17
EP3275009A1 (en) 2018-01-31
US20160284656A1 (en) 2016-09-29

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