JP2018506861A - 中間光学フィルターを有するメカニカルスタック型タンデム光起電力セル - Google Patents
中間光学フィルターを有するメカニカルスタック型タンデム光起電力セル Download PDFInfo
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- JP2018506861A JP2018506861A JP2017544964A JP2017544964A JP2018506861A JP 2018506861 A JP2018506861 A JP 2018506861A JP 2017544964 A JP2017544964 A JP 2017544964A JP 2017544964 A JP2017544964 A JP 2017544964A JP 2018506861 A JP2018506861 A JP 2018506861A
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- photosensitive device
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- photoactive
- optical filter
- photoactive layer
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- 230000003287 optical effect Effects 0.000 title claims abstract description 44
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 238000003466 welding Methods 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 12
- 238000004519 manufacturing process Methods 0.000 claims abstract description 10
- 238000000059 patterning Methods 0.000 claims abstract description 5
- 239000002096 quantum dot Substances 0.000 claims description 19
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 8
- 238000002329 infrared spectrum Methods 0.000 claims description 6
- 238000013086 organic photovoltaic Methods 0.000 claims description 6
- 238000002211 ultraviolet spectrum Methods 0.000 claims description 4
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 230000003595 spectral effect Effects 0.000 claims description 3
- XCAUINMIESBTBL-UHFFFAOYSA-N lead(ii) sulfide Chemical compound [Pb]=S XCAUINMIESBTBL-UHFFFAOYSA-N 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 96
- 238000010586 diagram Methods 0.000 description 11
- 238000001228 spectrum Methods 0.000 description 10
- 238000010521 absorption reaction Methods 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 5
- 239000010931 gold Substances 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 3
- 229910000510 noble metal Inorganic materials 0.000 description 3
- 239000004038 photonic crystal Substances 0.000 description 3
- 238000001429 visible spectrum Methods 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 238000000862 absorption spectrum Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000012044 organic layer Substances 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 1
- 229920000144 PEDOT:PSS Polymers 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
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- H01L31/055—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means where light is absorbed and re-emitted at a different wavelength by the optical element directly associated or integrated with the PV cell, e.g. by using luminescent material, fluorescent concentrators or up-conversion arrangements
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Abstract
Description
Claims (20)
- 少なくとも2つの光活性層と、
少なくとも1つの光学フィルター層と、を有しており、
少なくとも2つの層は、冷間圧接あるいはファンデルワールス結合を使用して結合されていることを特徴とする多結合型感光デバイス。 - 前記少なくとも1つの光学フィルター層は、分布ブラッグ反射器であることを特徴とする請求項1に記載の多結合型感光デバイス。
- 少なくとも3つの光活性層と、少なくとも2つの光学フィルター層と、を有しており、
少なくとも1つの光学フィルター層は、各光活性層の間に位置していることを特徴とする請求項1に記載の多結合型感光デバイス。 - 少なくとも1つの光活性層は、少なくとも1つの別の光活性層と異なる波長を吸収することが可能であることを特徴とする請求項1に記載の多結合型感光デバイス。
- 少なくとも1つの別の層より下の光活性層は、近赤外線スペクトルの光を吸収することを特徴とする請求項1に記載の多結合型感光デバイス。
- 少なくとも1つの別の層より上の光活性層は、紫外線スペクトルの光を吸収することを特徴とする請求項1に記載の多結合型感光デバイス。
- 少なくとも1つの光活性層は、少なくとも1つの別の光活性層によって吸収されない、10nmに及んでいる光の波長の範囲を吸収することを特徴とする請求項1に記載の多結合型感光デバイス。
- 波長選択光学フィルター層が、前記多結合型感光デバイスの少なくとも2つの光活性層の間に、配置されていることを特徴とする請求項1に記載の多結合型感光デバイス。
- 前記少なくとも2つの光活性層の間には、エアーギャップが存在しないことを特徴とする請求項1に記載の多結合型感光デバイス。
- 少なくとも1つの光活性層が、冷間圧接あるいはファンデルワールス結合されている領域における金属コンタクトに、単独で接続されていることを特徴とする請求項1に記載の多結合型感光デバイス。
- 個々のセルは、直列に接続されていることを特徴とする請求項10に記載の多結合型感光デバイス。
- 個々のセルは、並列に接続されていることを特徴とする請求項10に記載の多結合型感光デバイス。
- 個々のセルの少なくとも1つのグループは、直列に接続され、少なく1つのグループは、並列に接続されていることを特徴とする請求項10に記載の多結合型感光デバイス。
- 少なくとも1つの光活性層は、有機光起電力素子、量子ドット、シリコン、ゲルマニウム、III−V半導体、ケステライトおよびペロブスカイトから選択された材料を有することを特徴とする請求項1に記載の多結合型感光デバイス。
- 少なくとも1つの光活性層は、PbS量子ドットを有し、また、
少なくとも1つの光活性層は、有機光起電力素子を有することを特徴とする請求項1に記載の多結合型感光デバイス。 - 前記多結合型感光デバイスは、信号源から放射されるスペクトル信号を逆多重化するように構成される光検出器であることを特徴とする請求項1に記載の多結合型感光デバイス。
- 多結合型感光デバイスを製造する方法であって、
少なくとも2つの光活性層を製造し、少なくとも1つの光活性層は、透明基板上に製造され、かつ、少なくとも1つの光活性層は、反射基板上に製造されるステップと、
透明基板上に製造された前記少なくとも1つの光活性層上で少なくとも1つの光学フィルター層をパターニングするステップと、
冷間圧接結合を使用して、前記少なくとも2つの光活性層を結合するステップと、
を有することを特徴とする方法。 - 前記少なくとも1つの光学フィルター層は、分布ブラッグ反射器であることを特徴とする請求項17に記載の方法。
- 透明基板上に、少なくとも1つの付加光活性層をさらに製造することを特徴とする請求項17に記載の方法。
- 前記透明基板は、光活性層を含んでいることを特徴とする請求項19に記載の方法。
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