JP2018506171A - Easy-to-manufacture electrical components and methods for manufacturing electrical components - Google Patents

Abstract

An easily manufactured electrical component for a chip having a sensitive component structure is provided. The component includes a bonding structure and a wiring connection structure on the lower side of the chip, and a support substrate having at least a polymer layer.

Description

  The present invention relates to an electric component that can be easily manufactured and a simple manufacturing method of such a component.

  Electrical components, such as electrical or electronic modules or so-called component packages or module packages, generally comprise one or more chips, a support substrate having one or more sufficient mechanical stability, and between the chips, i.e. the chip and the support substrate. And a strip conductor that is electrically connected to each other. In that case, some electrical components further have a chip for performing a mechanical or electromechanical function. While chips with integrated circuits based solely on semiconductor technology are still relatively insensitive to external influences, it is problematic to integrate mechanically active chips based on sensitive component structures.

  From U.S. Pat. No. 8,227,904, U.S. Pat. Publication No. 2009/0101998 or DE-A-102000006132, electrical components having chips interconnected to one another are known. The manufacture of such parts is expensive and is reflected in high manufacturing costs and unoptimized durability.

  The object of the present invention is therefore to provide a plurality of chips, in particular mechanically active chips and electrical wiring connections between them, giving the chip a suitable and protective environment, which can be manufactured in a simple manner and long It is to provide an electrical component that has a lifetime. Therefore, a simple method for manufacturing such a component is also provided.

  These problems are solved by the parts or methods described in the independent claims. The dependent claims describe advantageous forms of the part or the method.

  The electrical component comprises a support substrate having at least one polymer layer. The component further includes a first chip having a joint structure and a metal wiring connection structure. Both the junction structure and the metal wiring connection structure are arranged on the lower side of the chip. The first chip is disposed on the support substrate. The bonded structure is placed on the polymer layer or protrudes without completely penetrating the polymer layer. The wiring connection structure penetrates the polymer layer.

  An electrical component having a different structure on the lower side of the chip is also provided. The junction structure generally has a smaller height than the wiring connection structure as measured from below the chip. In this way, the wiring connection structure penetrates the polymer layer of the support substrate under the chip and can be used for electrical wiring connection, while the bonding structure is a mechanical structure between the chip and the support substrate. Establish a bond.

  Since the polymer layer as part of the support substrate may be relatively soft or completely liquid at the time of manufacture, an electroplating through hole can be obtained in this layer of the support substrate, with the chip on its underside The structure is then pressed with sufficient strength onto a support substrate having a soft polymer layer as the top layer, which subsequently cures the polymer layer. And even if one of the additional layers located under the polymer layer is removed, an electrical connection with the chip on the underside of the support substrate already exists.

  For example, when the joining structure forms a frame structure whose periphery is closed in an annular shape, the closed hollow space can be formed into a first chip and a supporting substrate by a simple method according to the topology of the joining structure. Can be further obtained in the gap between the two.

  In that case, the first chip is a MEMS (Micro-Electro-Mechanical System) chip, a NEMS (Nano-Electro-Mechanical System) chip, an IC chip, an optoelectronic chip, an actuator chip, or a chip that simply includes passive circuit elements. It's okay. In addition, the first chip may be a composite chip, and may include circuit structures or components having different chip categories.

  Since parts with connections that reach through the substrate layer are simple, the possibility of defects during manufacturing is reduced and the life of the parts is increased.

  In that case, furthermore, the component is not limited to comprising only one or a few chips. Rather, the component may have a second chip, i.e. a plurality of further chips, which may be, for example, sensitive and fragile chips of the above categories.

  In addition to the polymer layer, the support substrate may include a layer disposed under the polymer layer. In this case, the layer may be composed of one or a plurality of layers, such as a semiconductor embedded substrate (SESUB), a circuit substrate, an LTCC (Low-Temperature Co-fired Ceramics) substrate, an HTCC (High-Temperature Co-fired Ceramics) substrate, an organic It may be a support flake, inorganic support flake, metal flake, single crystal substrate, polycrystalline substrate, semiconductor substrate, ceramic substrate, or glass substrate. Also, a composite layer of these essentially suitable materials as a support may be placed under the polymer layer, at least during the manufacture of the part.

  Furthermore, the component may have a gap between the first chip and the support substrate. For example, a highly sensitive structure such as a MEMS component structure is disposed below the first chip without contacting the support substrate. In that case, when the bonding structure, which is advantageously flat, is on the polymer layer, the height of the structure of the bonding structure approximately indicates the distance between the lower side of the first chip and the upper side of the polymer layer. Since the bonded structure is used in particular to form a hollow space between the chip and the support substrate, and since a sealed dense hollow space is advantageous in many applications, there is some In order to ensure sealing even in the presence of undulations, the bonded structure can protrude somewhat into the polymer layer. At the same time, the relief of the polymer layer determines the shortest possible uniform distance between the chip and the support substrate. This distance may be 5 μm, for example. In that case, the thickness of the polymer layer may be between 10 μm and 50 μm. Therefore, the height of the structure of the bonding structure is 5 μm or several percent larger than 5 μm. The height of the structure of the wiring connection structure is (almost) the sum of the distance between the chip and the support substrate and the thickness of the polymer layer.

  The lower (highly sensitive) component structure of the first chip is, for example, a SAW structure (SAW = Surface Acoustic Wave = surface acoustic wave), a BAW structure (Bulk Acoustic Wave = bulk elastic wave) or a microphone chip. It may be an electroacoustic transducer structure. In general, such structures require some distance relative to adjacent surfaces so that they can swing freely.

  Accordingly, the gap between the first chip and the support substrate may be further defined by a joint structure formed as a frame on the lower side of the chip on the side. At the same time, the frame, the chip, and the support substrate surround the hollow space. The frame may have a rectangular shape. Other shapes joined by the linear joining elements of the frame, such as polygons with 3, 5, 6, 7, 8, or more corners, or frames with curved portions are possible as well.

  In addition to the frame, the joining structure is additionally arranged inside the frame or outside the frame, for example as a spacer, and has additional elements that ensure an even distance between the chip and the support substrate even when force is applied to the chip. You can do it. Such a spacer may in particular be a so-called pillar.

  The bonding structure on the lower side of the first chip may comprise polymer, Cu (copper), Al (aluminum), Ag (silver), or Au (gold) or further metal as a main component. Similarly, the wiring connection structure may include, for example, a polymer containing Cu, Al, Ag, or Au as a main component of metal, or conductive metal nanoparticles made of these metals.

  Among metals as main components, Cu is particularly advantageous for both junction structure and wiring connection structure. Cu is compatible with standard CMOS process, has good electrical conductivity, and good mechanical rigidity. Because it has a value and withstands an oxidizing atmosphere for a sufficiently long time in the manufacturing process.

  Among the non-metallic main components, the polymer is advantageous in that it can be accurately aligned with good horizontal resolution and produced with sufficient thickness by jetting with a polymer printer. If the polymer material to be sprayed contains a metal, for example in the form of metal nanoparticles, then a conductive structure having a three-dimensional profile is printed.

  The wiring connection structure may have one or a plurality of bump bonded bodies or metal pillars or a plated through hole in the chip and / or the support substrate between the chip and the support substrate.

  Furthermore, the joining structure may include a support (pillar) or a support frame having a circular or rectangular cross section.

  In particular, when the chip is surrounded by a mold material in the manufacturing process on the support substrate, a high pressure may be applied to the chip. By providing the support element as a part of the bonding structure between the chip and the support substrate, it is possible to stabilize the position of the chip and particularly the sensitive electrical wiring connection structure depending on the case.

  Furthermore, the support joint structure between the chip and the support substrate reduces or completely compensates for the adverse effects due to the different expansion coefficients of the material between the chip and the support substrate.

  The component may comprise a second chip. The second chip may be disposed above or directly above the first chip. The second chip may be arranged on the support substrate along with the first chip.

  Such a component therefore comprises two chips. One of the two chips may include a mechanically active component structure, while the other chip includes an integrated circuit on which, for example, an ASIC (Application-Specific Integrated Circuit) is implemented. Thus, the chip that supports the mechanical components may be, for example, a freely oscillating conductive diaphragm or a microphone chip having a conductive back plate, while the other chip is electrically connected to the received acoustic signal. Includes analog or digital evaluation logic to output an encoded output signal.

  The component can further comprise a laminate, a mold, a material to be applied by a printing process, or a tube sheet having a flake above the first chip and / or a filler placed directly on the area of the support substrate. In that case, a filler (eg a so-called underfill material) is used, for example, for the first or further chip to establish a stable bond between the chip and the support substrate or to seal the hollow space under the chip. The gap between the chip material and the support substrate is filled.

  Furthermore, the component may comprise a top layer made of metal above the first chip or above the further chip. In that case, the top layer made of metal may be in direct contact with the chip. Further, the metal of the top layer is one of the uppermost layers of the component, and the layer disposed thereunder may be electromagnetically shielded.

  If the distance between the chips arranged side by side can be longer than, for example, 200 μm, the covering flakes may be pulled down to the surface of the substrate.

  When the distance between the chips arranged side by side is shorter than 50 μm, for example, the thin piece may embody a part surrounding the periphery of the hollow space when it is not pulled down to the substrate.

  If the top layer includes one or more layers with high acoustic contrast, the part can be printed by selective removal.

  The first chip or the further chip may be a sensor chip. The chip may be placed under the cover. Also, if the sensor chip can communicate with the surroundings of the part, for example, when analyzing pressure ratios or different gas compositions, the sensor chip is connected to the surroundings through a hole in the cover.

  The component may be a microphone. In this case, the sensor chip includes an electroacoustic transducer structure such as a diaphragm or a back plate. A rear volume is configured under the cover.

  The signal quality that can be adjusted by the provided microphone depends inter alia on the so-called rear volume. The rear volume is installed in the acoustic direction behind the diaphragm. The smaller the rear volume, the greater the counter pressure acting on the diaphragm deflection in the direction of acoustic propagation. Thus, a large rear volume is advantageous. However, since the continuing trend towards miniaturization is in the opposite direction to the large rear volume, it is always advantageous to provide a microphone that has a large rear volume but a small overall size. If the electrical component comprises further circuit elements in addition to the first chip, these may be arranged under a common cover and the space between the chips under the cover may be used as an extended rear volume.

  Moreover, if a recessed part is provided in a support substrate, back volume can be expanded.

  In addition to the first chip, the component can comprise at least one further chip on it. Similarly, a further chip is arranged on the upper side of the support substrate. The connection section between the chips extending above the support substrate is very long, so the support substrate can be bent in the form of a fold line extending between the chips without touching each other or otherwise interfering with each other It is. If a plurality of such folding lines are provided, a part with a large surface can be combined with a compact part. The combined parts are later molded with the molding material, resulting in a mechanically stable molded part in which the distance between the different circuit elements is precisely defined.

  Further, the component may include an exposed strip conductor and / or contact surface on the upper side of the support substrate that is provided for joining and wiring connection by plug-in connection with an external circuit environment. Advantageously, the strip conductors terminate at the edge of the support substrate. There, the strip conductor is advantageously extended to a contact pad. The parts also constitute a connector that can be easily inserted into a corresponding and suitable screw-in opening. Such plug-in connection has the advantage that it is easy to implement and simultaneously disconnect the electrical wiring connection and the mechanical connection. Accordingly, replacement of defective parts can be easily performed.

  The method for manufacturing an electrical component includes providing a first chip. A metal junction structure and a metal wiring connection structure are formed below the first chip. The junction structure and the wiring connection structure have different heights.

  Furthermore, a support substrate having a sufficiently soft polymer layer is provided.

  The first chip and the support substrate are joined. In that case, the wiring connection structure penetrates a sufficiently soft polymer layer. The bonded structure contacts or slightly penetrates the polymer layer without completely penetrating the polymer layer.

  After placing the first chip on the polymer layer that constitutes the main component of the support substrate, the polymer layer can be cured and is necessary depending on the viscosity of the polymer layer. In that case, the polymer layer can be cured by irradiation or heating.

  When the polymer layer is cured by heating, the presence of the bonded structure under the first chip has an advantageous effect because there may be different coefficients of thermal expansion.

  The support substrate includes a transparent layer in the preferred light wavelength region under the polymer layer. In that case, the polymer layer is preferably cured by exposure with light in this wavelength region. In that case, preferred is the light wavelength region where the polymer layer can be cured well. In particular, the polymer layer can be easily cured by ultraviolet irradiation.

  A further chip or a plurality of further chips are arranged alongside or on the first chip.

  For example, a filler such as an underfill material may be disposed in a region between the chip material and the support substrate.

  Thereby, the joining structure can form a frame around the hollow space, and the filler can be placed on the upper side of the support substrate over a large area without risk of overflowing from the hollow space.

  The mold material and / or the flakes may be placed above the first chip.

  Furthermore, the metal top layer may be placed on the first chip or above the first chip.

  The support substrate comprises a further layer below the polymer layer, which layer is completely or selectively removed from the area of the wiring connection structure after curing of the polymer layer, in which case the wiring connection structure is exposed. It's okay.

  The wiring connection structure may be exposed using a laser.

  The wiring connection structure may include a contact portion. The contact part of the wiring connector is exposed by forming the strip conductor and then brought into contact with the lower side of the support substrate.

  A normal lithography process may be used to form the strip conductor.

  A plurality of parts may be manufactured simultaneously. After all components of all parts are joined together, the individual parts may be separated by individualization.

  A composite layer having optically high contrast may be deposited on the upper side of the component. Such composite layers may include thin films or layers containing, for example, copper, nickel, and black nickel. Thereafter, the part is printed by selectively removing the nickel-containing material.

  The conductive structure may be formed by depositing a metal or alloy on the surface of the chip and / or the surface of the support substrate, or by injecting metal-containing particles such as nanoparticles. The conductive structure may thus be produced by electroplating or electroless plating or by printing with a suitable printer.

  The chips may be stacked on each other and may be interconnected with each other or the substrate through plated through holes. Therefore, a rewiring layer may be disposed on the chip surface, and wiring connection may be made at different horizontal positions through the contact portion.

  For example, the electrical solder connection between the chip and the substrate or between the chips may be performed by, for example, soldering.

  In the following, the main features of the part or method will be further described with reference to the schematic and non-limiting drawings.

The support substrate lower layer TSU used as the base of a polymer layer is shown. The support substrate which has support substrate upper layer TSO is shown. A first chip CH1 having a component structure BES on its lower side is shown. At the same time, a first chip having a wiring connection structure VSS formed thereon is shown. An embodiment of a chip is shown in which a bonded structure VBS is further disposed below the bonded structure. An arrangement of the first chip CH1 on the support substrate TS is shown. The arrangement of the second chip CH2 on the support substrate TS is shown. A part of the support substrate in which the first chip CH1 and the second chip CH2 are arranged side by side is shown. The filler UF in the gap between the second chip CH2 and the support substrate is shown. The support substrate in which the hole L is formed in lower layer TSU is shown. The metal coating M on the lower side of the support substrate, which realizes the signal path between the contact pads KP and the different electrical contacts of the chip, is shown. After the polymer layer is cured, it is in the form of a support substrate that no longer contains any further layers other than the polymer layer. Fig. 4 shows the direct placement of the second chip CH2 on the polymer layer without further filler. Fig. 5 shows a support substrate not reinforced by a filler under the second chip. The thin piece F arrange | positioned above the chip | tip on the upper side of a support substrate is shown. It is sectional drawing of components which shows the effect of the frame-shaped joining structure as a barrier with respect to a filler. A component having a signal path and contact pads on the upper surface of the support substrate is shown for the configuration of the plug-in connection. The part which has the molding material VM is shown. Fig. 2 shows a part configured as a microphone with a rear volume under the cover. Fig. 2 shows a part configured as a microphone having a rear volume in a recess under the first chip. It is the structure of a component as a microphone in which most of the rear volume is arranged alongside the transducer chip in the recess.

  FIG. 6 shows the major geometric dimensions or heights of the junction structure VBS and the wiring connection structure VSS with respect to the thickness of the polymer-containing upper layer TSO of the support substrate. The junction structure VBS and the wiring connection structure VSS are disposed below the first chip CH1. The height of the wiring connection structure VSS is larger than the height of the bonding structure VBS. The junction structure VBS mainly serves to maintain a distance between the lower side of the first chip CH1 and the upper side of the support substrate TS. In that case, the bonding structure VBS is in contact with the uppermost layer TSO of the support substrate TS mainly made of a polymer material. The joint structure VBS may be mounted substantially on the upper side of the upper layer TSO, or in some cases, may slightly enter the upper layer TSO.

  The wiring connection structure VSS penetrates the polymer-containing upper layer TSO of the support substrate TS due to its large height. When electrical contact is made later with the elements of the wiring connection structure VSS, it is only necessary to penetrate the lower layer TSU of the support substrate. In that case, the upper layer TSO is substantially maintained, and mechanical stability is ensured.

Figures 1-5 show the main manufacturing process of such a component:
FIG. 1 shows the base of the support substrate, that is, the lower TSU of the support substrate.

  A polymer-containing upper layer TSO is placed thereon (FIG. 2). In that case, since the upper layer is very soft, the wiring connection structure VSS can easily penetrate this later. In particular, the upper layer TSO may be liquid.

  FIG. 3 shows a first chip CH1 that supports a highly sensitive component structure BES such as a SAW structure, a BAW structure, or a diaphragm, for example. The component structure is characterized in that the component structure is swingably disposed on the upper side of the first chip CH1 in order to ensure an accurate function.

  FIG. 4 shows how the wiring connection structure VSS is arranged below the first chip CH1, for example in order to wire-connect the component structure to an external circuit environment or a further circuit component of the component.

  FIG. 5 further shows a bonding structure VBS on the lower side of the first chip. Thereby, a sufficient distance between the component structure BES and the support substrate TS provided therefor can be maintained, but the bonding structure VBS preferably has a larger structural height than the component structure BES. .

  Thus, after the lower structure of the first chip CH1 and the support substrate TS are joined, the component shown in FIG. 6 is obtained, and the component structure has a sufficient distance from the support substrate TS. . When the joint structure VBS is closed, a closed hollow space is obtained, in particular, where the component structures are arranged.

  FIG. 7 further shows a part of the support substrate TS on which the second chip CH2 is arranged. The second chip does not need to have a sensitive component structure on its surface. Therefore, even if the lower side and the support substrate TS are in direct contact, they are not damaged. A joined structure of the second chip CH2 and the support substrate TS is possible but not essential.

  Here, FIG. 8 shows a component B in which a second chip CH2 having a low sensitivity and a first chip CH1 having a mechanically sensitive component structure on the lower side thereof are arranged on a support substrate. Both chips comprise an electrical contact structure on the underside that passes through the polymer-containing top layer of the support substrate TS.

  FIG. 9 shows an embodiment in which the second chip CH2 is not in direct contact with the support substrate. When the free space between the second chip CH2 and the support substrate TS is not desirable, the volume under the second chip CH2 may be filled with a filler such as an underfill material UF.

  Since the joint structure VBS of the first chip CH1 is formed as a frame R that is closed in a ring shape, the underfill material UF is also applied to a highly sensitive component structure below the first chip CH1. There is no danger due to. Conversely, the filler UF can improve the hermetic closure of the hollow space under the first chip CH1.

  FIG. 10 shows the main advantages of the configuration of the present invention over conventional parts when the wiring connection structure VSS is electrically connected. Advantageously, the upper layer of the support substrate can be cured while providing sufficient mechanical stability. In order to connect the wiring structure by forming the signal line, it is only necessary to penetrate the underlying layer TSU and thereby expose the wiring connection structure VSS. Thus, for example, using a laser, the holes L may be drilled in the layer TSU disposed below the polymer layer of the support substrate TS.

  FIG. 11 shows a metal coating M that is disposed under the support substrate by a normal lithography process and interconnects the electrical contact portions of the chip or between the contact portion of the chip and the external contact pad KP.

  In FIG. 12, before the metal covering portion M for forming the signal path is installed on the lower side, the individual holes L are not selectively formed at the position of the wiring connection structure VSS, but the supporting substrate TS. An embodiment in which the lower TSU of the lower layer is completely removed is shown.

  13 and 14 show the corresponding electrical connections on the underside of the support substrate, where no filler is arranged between the support substrate and the second chip CH2. Depending on the thickness and stability of the polymer layer, they can already have sufficient mechanical stability (FIG. 14).

  FIG. 15 shows a further case where the upper part of the part is covered by a flake F. FIG. Depending on how far the chips above the support substrate are from each other, the flakes F may be joined to the upper surface of the support substrate, or the hollow space under the flakes may be surrounded between the chips. When the flakes are in contact with the upper surface of the support substrate, the flakes can be connected to an electric potential, for example by means of plated through holes in the support substrate. Furthermore, a plurality of correspondingly produced support substrates may be individualized, resulting in a plurality of different parts in which the sealing by the flakes is not impaired by the individualization. When the flake forms a hollow section with the support substrate and the side of the chip, it is formed as a rear volume for the microphone.

  FIG. 16 shows the protective effect of the joined structure VBS formed as a frame, which effectively prevents the filler UF from overflowing from the hollow space H under the first chip CH1. Therefore, the component structure BES is securely stored in the hollow space H.

  In addition to the first chip CH1, a further chip CH2 and a third chip CH3 are arranged above the support substrate.

  FIG. 17 shows a case where the signal path SL is formed by a metal cover portion on the upper surface of the support substrate. In that case, the signal path may extend from the contact portion of the chip toward the edge of the beauty article and terminate at the contact pad KP. Thereby, it is possible to connect to an external circuit environment by a simple method.

  The fold line KN is selected such that the chip or other circuit element still has sufficient space at the fold edge KN after bending of the support substrate above the support substrate. After bending, the support substrate can be molded together with its components on the upper surface, for example with a molding material such as a polymer or synthetic resin.

  Such a molding material is shown in FIG. In that case, the molding material covers the entire upper side of the part.

  FIG. 19 shows an embodiment of a component as a microphone. The first chip CH1 supports the diaphragm MB and the back plate RP as a component structure. The upper side of the support substrate is covered with a cover D. The cover D is configured with a hole as an acoustic input hole. The cover D further includes a rear volume RV along with the first chip CH1. At the same time, an acoustic short circuit is avoided and an acoustic seal AD is formed between the acoustic input and the rear volume RV. In this case, since the joint structure is not completely closed, gas exchange between the volume below the diaphragm MB of the first chip CH1 and the rear volume RV is possible.

  FIG. 20 shows a case where the rear volume under the diaphragm is provided by a recess in the support substrate, that is, the uppermost layer TSO.

  The thicker the uppermost layer TSO of the support substrate, the larger the rear volume RV. In that case, the wiring connection structure is long enough to completely penetrate the top layer TSO.

  FIG. 21 shows a further embodiment of the component as a microphone in which a part of the rear volume is formed side by side with the first chip by the recess AU of the support substrate. A further hole L in the support substrate represents an acoustic input hole. The joint structure is closed in the form of a ring in this embodiment in order to avoid acoustic shorts.

  Neither the part nor the method of manufacturing the part is limited to the illustrated or described embodiments.

DESCRIPTION OF SYMBOLS AU: Recessed part B: Part BES: Part structure CH1: First chip CH2: Second chip CH3: Third chip D: Cover F: Thin piece H: Hollow space KN: Curved line KP: Contact pad L: Hole M: Metal coating MB: Diaphragm R: Frame RP: Back plate RV: Back volume SL: Signal path TS: Support substrate TSO: Support substrate top layer TSU: Layer below support substrate top layer UF: Filler or underfill Material VBS: Bonding structure VM: Molding material VSS: Wiring connection structure

Claims (28)

The electrical component (B) comprises:
A support substrate (TS) having at least one polymer layer (TSO);
A first chip (CH1) having a junction structure (VBR) and a metal wiring connection structure (VSS) underneath,
Features:
The first chip (CH1) is disposed on the support substrate (TS),
The bonding structure (VBS) is placed on the polymer layer (TSO) or protrudes without penetrating in the polymer layer (TSO),
The wiring connection structure (VSS) penetrates the polymer layer (TSO).   The component according to claim 1, wherein the first chip (CH1) is selected from a MEMS chip, a NEMS chip, an IC chip, an optoelectronic chip, an actuator chip, or a chip that simply comprises a passive circuit element.   The support substrate (TS) is selected from a semiconductor built-in substrate, a circuit substrate, an LTCC substrate, an HTCC substrate, an organic support thin piece, an inorganic support thin piece, a metal thin piece, a single crystal substrate, a polycrystalline substrate, a semiconductor substrate, a ceramic substrate, and a glass substrate. The component according to claim 1, further comprising a layer to be processed (TSU). In the component according to any one of claims 1 to 3,
A gap between the first chip (CH1) and the support substrate (TS);
The highly sensitive structure (BES) is disposed below the first chip (CH1) without being in contact with the support substrate (TS).   The gap is laterally defined by the joint structure (VBS) formed as a frame (R) below the chip, and the chip (CH1), the frame (R), and the support substrate (TS). 5. The component according to claim 4, which surrounds a hollow space (H). In the component according to any one of claims 1 to 5,
The junction structure (VBS) as the main component is a polymer, Cu, Al, Ag, or Au, and
The said wiring connection structure (VSS) as a main component contains Cu, Al, Ag, or Au. The component according to any one of claims 1 to 6, wherein the wiring connection structure (VSS) is
A bump bonded body, a metal pillar, or the chip (CH1) and / or the support substrate (TS) has a plated through hole.
Have.   The component according to claim 1, wherein the joining structure (VBS) includes a support or a support frame (R) having a circular or rectangular cross section. The component according to any one of claims 1 to 8, further comprising a second chip (CH2), wherein the second chip is disposed above or on the first chip (CH1),
It is arranged on the support substrate (TS) along with the first chip (CH1). The component according to any one of claims 1 to 9 further comprises:
Laminated body, mold material (VM), material to be coated by printing process, or tube sheet having thin piece (F) above first chip (CH1) and / or
Filler (UF) which is directly disposed on the region of the support substrate (TS) and fills a gap between the chip material and the support substrate (TS).   The component according to any one of claims 1 to 10, further comprising a top layer made of metal above the first chip (CH1). In the component according to any one of claims 1 to 11,
The first chip (CH1) or the further chip (CH2, CH3) is a sensor chip and is disposed under the cover (D),
The sensor chip is connected to the periphery of the component (B) through a hole in the cover (D). The component according to claim 12,
The component is a microphone,
The sensor chip comprises an electroacoustic transducer structure;
A rear volume (RV) is formed under the cover (D).   In a component comprising at least one further chip (CH2, CH3), the further chip (CH2, CH3) is arranged above the support substrate (TS) and the first chip on the support substrate (TS) The connecting section between (CH1) and the further chip (CH2, CH3) is very long, so that the support substrate (TS) between the chips (CH1, CH2, CH3) is bendable. The component according to any one of 1 to 13.   The exposed strip conductor (SL) provided for joining and wiring connection by plug-in connection with an external circuit environment is further provided on the upper side of the support substrate (TS). The part described in the section. The manufacturing method of the electrical component (B) includes the following steps:
Providing a first chip (CH1);
In the step of forming a metal junction structure (VBS) and a metal wiring connection structure (VSS) under the first chip (CH1), the structures (VBS, VSS) have different heights; ,
Providing a support substrate (TS) having a soft polymer layer (TSO);
In the step of bonding the first chip (CH1) and the support substrate (TS), the wiring connection structure (VSS) penetrates the polymer layer (TSO), and the bonding structure (VBS) is the polymer. Contacting the polymer layer (TSO) without penetrating the layer (TSO).   The method according to claim 16, wherein the polymer layer (TSO) is cured by irradiation or heating after the first chip (CH1) is placed. The method of claim 17, wherein
The support substrate (TS) includes a layer under the polymer layer (TSO), the layer being transparent in a suitable light wavelength region, and curing the polymer layer (TSO) by exposure in the wavelength region.   19. A further chip (CH2) or a plurality of further chips (CH2, CH3) is arranged side by side with or on the first chip (CH1). 2. The method according to item 1.   The method according to any one of claims 16 to 19, wherein the filler (UF) is disposed in a region between the chip material (CH1, CH2, CH3) and the support substrate (TS).   The method according to any one of claims 16 to 20, wherein the mold material (VM) and / or the flakes (F) are placed above the first chip (CH1).   The method according to any one of claims 16 to 21, wherein a metal top layer is placed above the first chip (CH1).   The support substrate (TS) includes a further layer (TSU) under the polymer layer (TSO), and the further layer (TSU) is completely or selectively after the curing of the polymer layer (TSO). 23. The method according to any one of claims 16 to 22, wherein the wiring connection structure (VSS) is removed from a region of the wiring connection structure (VSS) and the wiring connection structure (VSS) is exposed.   24. The method of claim 23, wherein exposing the wiring connection structure (VSS) is performed using a laser. 25. A method as claimed in any one of claims 23 or 24.
The wiring connection structure (VSS) includes a contact portion (KP),
The contact part (KP) is exposed by the formation of a strip conductor (SL), and then is contacted under the support substrate (TS).   26. A method according to any one of claims 16 to 25, wherein the part is produced in a plurality together with a plurality of other parts and separated from the other parts by individualization. A method according to any one of claims 16 to 26,
A composite layer having a layer containing Cu, Ni, and black nickel is attached to the upper side of the component, and then
Printing is performed by selectively removing the Ni-containing material.   The conductive structure (SL) is formed by depositing a metal or an alloy on the surface of the chip (CH1) and / or the surface of the support substrate (TS) or injecting metal-containing nanoparticles. Item 28. The method according to any one of Items 16 to 27.

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