JP2018180254A - 表示装置 - Google Patents
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- JP2018180254A JP2018180254A JP2017079159A JP2017079159A JP2018180254A JP 2018180254 A JP2018180254 A JP 2018180254A JP 2017079159 A JP2017079159 A JP 2017079159A JP 2017079159 A JP2017079159 A JP 2017079159A JP 2018180254 A JP2018180254 A JP 2018180254A
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1251—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs comprising TFTs having a different architecture, e.g. top- and bottom gate TFTs
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
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- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/818—Reflective anodes, e.g. ITO combined with thick metallic layers
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
- H10K50/865—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. light-blocking layers
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
- G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/311—Flexible OLED
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Abstract
Description
本実施形態では、本発明の一実施形態に係る表示装置について、図1乃至図8を参照して説明する。
図1及び図2に、本発明の一実施形態に係る表示装置の構成を示した概略図を示す。図1に示す表示装置は、表示パネルを巻き取り可能な表示装置であり、図1では、表示パネルが繰り広げられた状態を示している。また、図2では、表示パネルが筐体から露出された状態を示している。
図3乃至図5に、本発明の一実施形態に係る表示装置の構成を示した概略図を示す。図3乃至図5に示す表示装置は、筐体と共に表示パネルを折り曲げることが可能な表示装置であり、図3では、筐体と共に表示パネルが開かれた状態を示している。また、図4では、筐体と共に表示パネルを折り曲げた状態を示しており、図5では、筐体と共に表示パネルを折り畳んだ状態を示している。
図7及び図8に、本発明の一実施形態に係る表示装置の構成を示した概略図を示す。図7及び図8に示す表示装置は、クリップボードとして使用する例を示す。また、表示装置220は、表示パネルを収納可能な表示装置であり、図7では、表示パネルが開かれた状態を示している。また、図8では、表示パネルが収納部に収納された状態を示している。
図9は、本発明の一実施形態に係る折り曲げ可能な表示パネル100の構成を示した概略図であり、表示パネル100を平面視した場合における概略構成を示している。本明細書等では、表示パネル100を画面(表示領域)に垂直な方向から見た様子を「平面視」と呼ぶ。
次に、図9に示す表示領域103aが有する画素109aの構成及び表示領域103bが有する画素109bの構成について、図10及び図11を参照して説明する。具体的には、図10には、図9に示した表示領域103aのA1−A2線で切断した断面の構成を示し、図11には、図9に示した表示領域103bのB1−B2線で切断した断面の構成を示す。
Claims (18)
- 可撓性を有する表示パネルと、前記表示パネルを収納する筐体と、を有し、
前記表示パネルは、第1表示領域及び第2表示領域を有し、
前記第1表示領域及び前記第2表示領域は、前記表示パネルが前記筐体から露出されたとき、第1方向から表示を視認でき、
前記第2表示領域は、前記表示パネルが前記筐体に収納されたたとき、前記第1方向と反対の第2方向から、表示を視認できる、表示装置。 - 前記第2表示領域の上方に第1偏光板が設けられ、
前記第2表示領域の下方に第2偏光板が設けられ、
前記第1偏光板と前記第2偏光板とは、クロスニコル状態をなす、請求項1に記載の表示装置。 - 前記第1表示領域の上方に、第3偏光板が設けられる、請求項1に記載の表示装置。
- 前記第2表示領域の下方に、タッチパネルが設けられる、請求項1に記載の表示装置。
- 前記第1表示領域及び前記第2表示領域の上方に、タッチパネルが設けられる、請求項1に記載の表示装置。
- 前記第1表示領域は、第1発光素子を有し、
前記第1発光素子は、反射性を有する画素電極と、第1有機層と、透光性を有する対向電極と、を有し、
前記第2表示領域は、第2発光素子を有し、
前記第2発光素子は、透光性を有する画素電極と、第2有機層と、前記対向電極と、を有する、請求項1に記載の表示装置。 - 可撓性を有する表示パネルと、前記表示パネルを収納する筒状の筐体と、を有し、
前記表示パネルは、第1表示領域及び第2表示領域を有し、
前記筒状の筐体は、開口部を有し、
前記表示パネルが前記筒状の筐体に収納されたとき、前記開口部から前記第2表示領域の表示を視認できる、表示装置。 - 前記第2表示領域の上方に第1偏光板が設けられ、
前記第2表示領域の下方に第2偏光板が設けられ、
前記第1偏光板と前記第2偏光板とは、クロスニコル状態をなす、請求項7に記載の表示装置。 - 前記第1表示領域の上方に、第3偏光板が設けられる、請求項7に記載の表示装置。
- 前記第2表示領域の下方に、タッチパネルが設けられる、請求項7に記載の表示装置。
- 前記第1表示領域及び前記第2表示領域の上方に、タッチパネルが設けられる、請求項7に記載の表示装置。
- 前記第1表示領域は、第1発光素子を有し、
前記第1発光素子は、反射性を有する画素電極と、第1有機層と、透光性を有する対向電極と、を有し、
前記第2表示領域は、第2発光素子を有し、
前記第2発光素子は、透光性を有する画素電極と、第2有機層と、前記対向電極と、を有する、請求項7に記載の表示装置。 - 可撓性を有する表示パネルと、前記表示パネルを収納する折り曲げ可能な筐体と、を有し、
前記表示パネルは、第1表示領域及び第2表示領域を有し、
前記筐体は、開口部を有し、
前記筐体が折り畳まれたとき、前記開口部から前記第2表示領域の表示を視認できる、表示装置。 - 前記第2表示領域の上方に第1偏光板が設けられ、
前記第2表示領域の下方に第2偏光板が設けられ、
前記第1偏光板と前記第2偏光板とは、クロスニコル状態をなす、請求項13に記載の表示装置。 - 前記第1表示領域の上方に、第3偏光板が設けられる、請求項13に記載の表示装置。
- 前記第2表示領域の下方に、タッチパネルが設けられる、請求項13に記載の表示装置。
- 前記第1表示領域及び前記第2表示領域の上方に、タッチパネルが設けられる、請求項13に記載の表示装置。
- 前記第1表示領域は、第1発光素子を有し、
前記第1発光素子は、反射性を有する画素電極と、第1有機層と、透光性を有する対向電極と、を有し、
前記第2表示領域は、第2発光素子を有し、
前記第2発光素子は、透光性を有する画素電極と、第2有機層と、前記対向電極と、を有する、請求項13に記載の表示装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017079159A JP2018180254A (ja) | 2017-04-12 | 2017-04-12 | 表示装置 |
US15/939,483 US10468612B2 (en) | 2017-04-12 | 2018-03-29 | Display device |
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JP2017079159A JP2018180254A (ja) | 2017-04-12 | 2017-04-12 | 表示装置 |
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JP2018180254A5 JP2018180254A5 (ja) | 2020-05-21 |
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US10847739B2 (en) * | 2017-09-21 | 2020-11-24 | Sharp Kabushiki Kaisha | Display device having larger openings on inner sides of anode electrodes in display region than on inner sides of anode electrodes in peripheral display region |
WO2019078318A1 (ja) * | 2017-10-20 | 2019-04-25 | パイオニア株式会社 | 発光装置及び発光モジュール |
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WO2015083029A1 (en) * | 2013-12-02 | 2015-06-11 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method for manufacturing the same |
KR102152737B1 (ko) * | 2014-01-13 | 2020-09-08 | 삼성디스플레이 주식회사 | 표시 장치 및 그 제조 방법 |
TWI543129B (zh) | 2014-07-22 | 2016-07-21 | Lg顯示器股份有限公司 | 捲軸式顯示裝置 |
KR102471237B1 (ko) * | 2015-01-21 | 2022-11-28 | 삼성디스플레이 주식회사 | 폴더블 표시장치 |
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US20040183958A1 (en) * | 2003-03-18 | 2004-09-23 | Kabushiki Kaisha Toshiba | Display device |
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JP2006287982A (ja) * | 2005-07-13 | 2006-10-19 | Columbus No Tamagotachi:Kk | フレキシブルディスプレイを備えた携帯型通信端末 |
JP2012015122A (ja) * | 2005-10-18 | 2012-01-19 | Semiconductor Energy Lab Co Ltd | 電子機器 |
JP2009094003A (ja) * | 2007-10-11 | 2009-04-30 | Dainippon Printing Co Ltd | 発光型有機el表示パネル |
JP2013196623A (ja) * | 2012-03-22 | 2013-09-30 | Sharp Corp | ディスプレイ装置、ディスプレイシステム、およびディスプレイ制御方法、ならびにそのプログラム。 |
US20140347827A1 (en) * | 2013-05-27 | 2014-11-27 | Samsung Display Co., Ltd. | Flexible display apparatuses and methods of manufacturing flexible display apparatuses |
JP2015143843A (ja) * | 2013-12-24 | 2015-08-06 | 株式会社半導体エネルギー研究所 | 電子機器 |
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US10468612B2 (en) | 2019-11-05 |
US20180301644A1 (en) | 2018-10-18 |
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