JP2018180254A - 表示装置 - Google Patents
表示装置 Download PDFInfo
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- JP2018180254A JP2018180254A JP2017079159A JP2017079159A JP2018180254A JP 2018180254 A JP2018180254 A JP 2018180254A JP 2017079159 A JP2017079159 A JP 2017079159A JP 2017079159 A JP2017079159 A JP 2017079159A JP 2018180254 A JP2018180254 A JP 2018180254A
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- display
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- light emitting
- polarizing plate
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Classifications
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
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- H—ELECTRICITY
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1251—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs comprising TFTs having a different architecture, e.g. top- and bottom gate TFTs
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- H10K50/818—Reflective anodes, e.g. ITO combined with thick metallic layers
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- H10K50/865—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. light-blocking layers
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- H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
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- H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
- H10K59/8792—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. black layers
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- H10K77/111—Flexible substrates
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- G—PHYSICS
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
本実施形態では、本発明の一実施形態に係る表示装置について、図1乃至図8を参照して説明する。
図1及び図2に、本発明の一実施形態に係る表示装置の構成を示した概略図を示す。図1に示す表示装置は、表示パネルを巻き取り可能な表示装置であり、図1では、表示パネルが繰り広げられた状態を示している。また、図2では、表示パネルが筐体から露出された状態を示している。
図3乃至図5に、本発明の一実施形態に係る表示装置の構成を示した概略図を示す。図3乃至図5に示す表示装置は、筐体と共に表示パネルを折り曲げることが可能な表示装置であり、図3では、筐体と共に表示パネルが開かれた状態を示している。また、図4では、筐体と共に表示パネルを折り曲げた状態を示しており、図5では、筐体と共に表示パネルを折り畳んだ状態を示している。
図7及び図8に、本発明の一実施形態に係る表示装置の構成を示した概略図を示す。図7及び図8に示す表示装置は、クリップボードとして使用する例を示す。また、表示装置220は、表示パネルを収納可能な表示装置であり、図7では、表示パネルが開かれた状態を示している。また、図8では、表示パネルが収納部に収納された状態を示している。
図9は、本発明の一実施形態に係る折り曲げ可能な表示パネル100の構成を示した概略図であり、表示パネル100を平面視した場合における概略構成を示している。本明細書等では、表示パネル100を画面(表示領域)に垂直な方向から見た様子を「平面視」と呼ぶ。
次に、図9に示す表示領域103aが有する画素109aの構成及び表示領域103bが有する画素109bの構成について、図10及び図11を参照して説明する。具体的には、図10には、図9に示した表示領域103aのA1−A2線で切断した断面の構成を示し、図11には、図9に示した表示領域103bのB1−B2線で切断した断面の構成を示す。
Claims (18)
- 可撓性を有する表示パネルと、前記表示パネルを収納する筐体と、を有し、
前記表示パネルは、第1表示領域及び第2表示領域を有し、
前記第1表示領域及び前記第2表示領域は、前記表示パネルが前記筐体から露出されたとき、第1方向から表示を視認でき、
前記第2表示領域は、前記表示パネルが前記筐体に収納されたたとき、前記第1方向と反対の第2方向から、表示を視認できる、表示装置。 - 前記第2表示領域の上方に第1偏光板が設けられ、
前記第2表示領域の下方に第2偏光板が設けられ、
前記第1偏光板と前記第2偏光板とは、クロスニコル状態をなす、請求項1に記載の表示装置。 - 前記第1表示領域の上方に、第3偏光板が設けられる、請求項1に記載の表示装置。
- 前記第2表示領域の下方に、タッチパネルが設けられる、請求項1に記載の表示装置。
- 前記第1表示領域及び前記第2表示領域の上方に、タッチパネルが設けられる、請求項1に記載の表示装置。
- 前記第1表示領域は、第1発光素子を有し、
前記第1発光素子は、反射性を有する画素電極と、第1有機層と、透光性を有する対向電極と、を有し、
前記第2表示領域は、第2発光素子を有し、
前記第2発光素子は、透光性を有する画素電極と、第2有機層と、前記対向電極と、を有する、請求項1に記載の表示装置。 - 可撓性を有する表示パネルと、前記表示パネルを収納する筒状の筐体と、を有し、
前記表示パネルは、第1表示領域及び第2表示領域を有し、
前記筒状の筐体は、開口部を有し、
前記表示パネルが前記筒状の筐体に収納されたとき、前記開口部から前記第2表示領域の表示を視認できる、表示装置。 - 前記第2表示領域の上方に第1偏光板が設けられ、
前記第2表示領域の下方に第2偏光板が設けられ、
前記第1偏光板と前記第2偏光板とは、クロスニコル状態をなす、請求項7に記載の表示装置。 - 前記第1表示領域の上方に、第3偏光板が設けられる、請求項7に記載の表示装置。
- 前記第2表示領域の下方に、タッチパネルが設けられる、請求項7に記載の表示装置。
- 前記第1表示領域及び前記第2表示領域の上方に、タッチパネルが設けられる、請求項7に記載の表示装置。
- 前記第1表示領域は、第1発光素子を有し、
前記第1発光素子は、反射性を有する画素電極と、第1有機層と、透光性を有する対向電極と、を有し、
前記第2表示領域は、第2発光素子を有し、
前記第2発光素子は、透光性を有する画素電極と、第2有機層と、前記対向電極と、を有する、請求項7に記載の表示装置。 - 可撓性を有する表示パネルと、前記表示パネルを収納する折り曲げ可能な筐体と、を有し、
前記表示パネルは、第1表示領域及び第2表示領域を有し、
前記筐体は、開口部を有し、
前記筐体が折り畳まれたとき、前記開口部から前記第2表示領域の表示を視認できる、表示装置。 - 前記第2表示領域の上方に第1偏光板が設けられ、
前記第2表示領域の下方に第2偏光板が設けられ、
前記第1偏光板と前記第2偏光板とは、クロスニコル状態をなす、請求項13に記載の表示装置。 - 前記第1表示領域の上方に、第3偏光板が設けられる、請求項13に記載の表示装置。
- 前記第2表示領域の下方に、タッチパネルが設けられる、請求項13に記載の表示装置。
- 前記第1表示領域及び前記第2表示領域の上方に、タッチパネルが設けられる、請求項13に記載の表示装置。
- 前記第1表示領域は、第1発光素子を有し、
前記第1発光素子は、反射性を有する画素電極と、第1有機層と、透光性を有する対向電極と、を有し、
前記第2表示領域は、第2発光素子を有し、
前記第2発光素子は、透光性を有する画素電極と、第2有機層と、前記対向電極と、を有する、請求項13に記載の表示装置。
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