JP2018173539A - 電気光学変調器 - Google Patents
電気光学変調器 Download PDFInfo
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- JP2018173539A JP2018173539A JP2017071594A JP2017071594A JP2018173539A JP 2018173539 A JP2018173539 A JP 2018173539A JP 2017071594 A JP2017071594 A JP 2017071594A JP 2017071594 A JP2017071594 A JP 2017071594A JP 2018173539 A JP2018173539 A JP 2018173539A
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- 229910000577 Silicon-germanium Inorganic materials 0.000 claims abstract description 40
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- 150000001875 compounds Chemical class 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 29
- 230000000694 effects Effects 0.000 abstract description 29
- 229910052710 silicon Inorganic materials 0.000 abstract description 29
- 239000010703 silicon Substances 0.000 abstract description 29
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical class O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 210000000746 body region Anatomy 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
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- 108091006149 Electron carriers Proteins 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 3
- 238000005253 cladding Methods 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
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- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 230000005374 Kerr effect Effects 0.000 description 1
- 230000005697 Pockels effect Effects 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
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- 238000011156 evaluation Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
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- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference
- G02F1/225—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference in an optical waveguide structure
- G02F1/2257—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference in an optical waveguide structure the optical waveguides being made of semiconducting material
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction in an optical waveguide structure
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference
- G02F1/212—Mach-Zehnder type
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/10—Materials and properties semiconductor
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/10—Materials and properties semiconductor
- G02F2202/105—Materials and properties semiconductor single crystal Si
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
Description
この時、SiあるいはSiGe層における<110>方向のホールの移動度は、<100>方向に対して大きく、ホールの有効質量も小さいため、自由キャリアプラズマ効果が増強され、小型・低消費電力で高性能な電気光学変調器が実現される。なお、光の電界方向は<110>方向を中心に±40度の範囲内の方向であれば10%程度のホールの移動度の改善効果がある。したがって、本発明では光の電界方向を前記SiあるいはSiGe結晶の<110>方向を中心に±40度の範囲内の方向となるように設定する。<110>方向と平行な方向に光の電界方向を設定することで最も大きなホール移動度の改善効果が得られる。本明細書では<110>方向を中心に±40度の範囲内の方向を「<110>方向とぼ平行」な方向という。
図7に示す本発明の別の実施形態例に係る構造では、図4の構成に加え、SIS接合を形成する2層の半導体層のうち、第1の導電型の半導体層(p型Si層)4に同じ導電型(p型)のSi1−xGex(0<x≦0.9)層(以下、SiGe層)12が設けられており、第1導電型の半導体層4に積層プロセスによる歪応力の印加がなされている。また、図8に示すように、PN接合導波路構造の少なくとも一部に、p型のSiGe層13が形成されて歪応力が印加されている。さらに、図9では、PN接合導波路構造の少なくとも一部に、圧縮歪が印加されるようにSiNx膜14が形成された電気光学変調器の例を示している。PIN接合導波路に対しても歪応力の印加は有効である。
2 埋め込み酸化層
3 リブ(真性半導体層)
4 第1の導電型の半導体層
5 第2の導電型の半導体層
6 第1コンタクト領域
7 第2コンタクト領域
8 酸化物クラッド
9 第1の電極
10 第2の電極
11 誘電体層
12 Si1−xGex(0<x≦0.9)層
13 Si1−xGex(0<x≦0.9)層
14 SiNx応力印加膜
15 酸化物マスク
16 ハードマスク
17 第1コンタクトホール
18 第2コンタクトホール
20 電気光学装置
21 第1のアーム
22 第2のアーム
23 電気光学装置駆動用電極パッド
24 光分岐構造
25 光合波構造
Claims (8)
- SiあるいはSiGe結晶を含む導波路構造を具備する電気光学変調器において、前記導波路構造内を伝播する光の電界方向が前記SiあるいはSiGe結晶の<110>方向とほぼ平行となるように設定されることを特徴とする電気光学変調器。
- 前記導波路構造が、互いに異なる導電型を呈する2層の半導体層間に誘電体層が設けられたSIS(semiconductor−insulator−semiconductor)接合を含み、前記2層の半導体層の一方が前記SiあるいはSiGe結晶を含むことを特徴とする請求項1に記載の電気光学変調器。
- 前記2層の半導体層の他方が、化合物半導体層を含むことを特徴とする請求項2に記載の電気光学変調器。
- 前記2層の半導体層の一方の前記SiあるいはSiGe結晶が、前記誘電体層と接する面に歪応力が印加されていることを特徴とする請求項2又は3に記載の電気光学変調器。
- 前記導波路構造が、前記SiあるいはSiGe結晶中にPN接合あるいはPIN接合を含むことを特徴とする請求項1に記載の電気光学変調器。
- 前記導波路構造の少なくとも一部に、歪応力が印加されていることを特徴とする請求項5に記載の電気光学変調器。
- 前記PN接合あるいはPIN接合上に歪応力を印加する半導体層が積層されていることを特徴とする請求項6に記載の電気光学変調器。
- 前記PN接合あるいはPIN接合に、前記<110>方向に圧縮歪を印加する絶縁層が形成されていることを特徴とする請求項6に記載の電気光学変調器。
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JP2017071594A JP6992961B2 (ja) | 2017-03-31 | 2017-03-31 | 電気光学変調器 |
US15/940,087 US20180284559A1 (en) | 2017-03-31 | 2018-03-29 | Electro-optic modulator |
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JP2017071594A JP6992961B2 (ja) | 2017-03-31 | 2017-03-31 | 電気光学変調器 |
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JP2018173539A true JP2018173539A (ja) | 2018-11-08 |
JP6992961B2 JP6992961B2 (ja) | 2022-01-13 |
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JP (1) | JP6992961B2 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
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EP3518280B1 (en) * | 2018-01-25 | 2020-11-04 | Murata Manufacturing Co., Ltd. | Electronic product having embedded porous dielectric and method of manufacture |
JP7404696B2 (ja) * | 2019-07-30 | 2023-12-26 | 富士通オプティカルコンポーネンツ株式会社 | 光デバイス |
US11940678B2 (en) * | 2020-07-14 | 2024-03-26 | Intel Corporation | Stressed silicon modulator |
WO2022033686A1 (en) * | 2020-08-13 | 2022-02-17 | Huawei Technologies Co., Ltd. | Design and method of manufacture for a membrane modulator device |
CN117406471A (zh) * | 2022-07-07 | 2024-01-16 | 苏州湃矽科技有限公司 | 硅光调制器 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011092861A1 (ja) * | 2010-02-01 | 2011-08-04 | 株式会社日立製作所 | 光素子 |
JP2011232529A (ja) * | 2010-04-27 | 2011-11-17 | Fujitsu Ltd | 導波路型共振器デバイス |
US20130170784A1 (en) * | 2012-01-02 | 2013-07-04 | Samsung Electronics Co., Ltd. | Semiconductor devices and methods of manufacturing the same |
JP2013214044A (ja) * | 2012-03-08 | 2013-10-17 | Univ Of Tokyo | 光変調器 |
WO2014155450A1 (ja) * | 2013-03-26 | 2014-10-02 | 日本電気株式会社 | シリコンベース電気光学変調装置 |
WO2015194002A1 (ja) * | 2014-06-19 | 2015-12-23 | 株式会社日立製作所 | 光変調器、及びその製造方法 |
WO2016125772A1 (ja) * | 2015-02-06 | 2016-08-11 | 技術研究組合光電子融合基盤技術研究所 | 光変調器及びその製造方法 |
-
2017
- 2017-03-31 JP JP2017071594A patent/JP6992961B2/ja active Active
-
2018
- 2018-03-29 US US15/940,087 patent/US20180284559A1/en not_active Abandoned
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011092861A1 (ja) * | 2010-02-01 | 2011-08-04 | 株式会社日立製作所 | 光素子 |
JP2011232529A (ja) * | 2010-04-27 | 2011-11-17 | Fujitsu Ltd | 導波路型共振器デバイス |
US20130170784A1 (en) * | 2012-01-02 | 2013-07-04 | Samsung Electronics Co., Ltd. | Semiconductor devices and methods of manufacturing the same |
JP2013214044A (ja) * | 2012-03-08 | 2013-10-17 | Univ Of Tokyo | 光変調器 |
WO2014155450A1 (ja) * | 2013-03-26 | 2014-10-02 | 日本電気株式会社 | シリコンベース電気光学変調装置 |
WO2015194002A1 (ja) * | 2014-06-19 | 2015-12-23 | 株式会社日立製作所 | 光変調器、及びその製造方法 |
WO2016125772A1 (ja) * | 2015-02-06 | 2016-08-11 | 技術研究組合光電子融合基盤技術研究所 | 光変調器及びその製造方法 |
Non-Patent Citations (1)
Title |
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KIM ET AL.: "Ge-rich SiGe-on-insulator for waveguide optical modulator application fabricated by Ge condensation", OPTICS EXPRESS, vol. Vol. 21, Issue 17, JPN6021000457, 13 August 2013 (2013-08-13), US, ISSN: 0004537855 * |
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