JP2018169050A - Base plate heating device, base plate processing system, and base plate heating method - Google Patents

Abstract

To prevent a sublimate from sticking to the inner face of a chamber.SOLUTION: The base plate heating device according to an embodiment of the present invention comprises a chamber having a storage space that is formed therein and can store a base plate coated with a solution, a decompression part that can decompress the atmosphere in the storage space, a base plate heating part that is disposed at least on one of one side and the other side of the base plate and can heat the base plate, and a chamber heating part that can heat at least a part of the inner face of the chamber.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a substrate heating apparatus, a substrate processing system, and a substrate heating method.

  In recent years, there is a market need for a resin substrate having flexibility instead of a glass substrate as a substrate for an electronic device. For example, such a resin substrate uses a polyimide film. For example, the polyimide film is formed through a process of heating the substrate (heating process) after applying a polyimide precursor solution to the substrate. For example, the polyimide precursor solution includes a polyamic acid varnish composed of a polyamic acid and a solvent (see, for example, Patent Document 1 and Patent Document 2).

JP 2001-210632 A International Publication No. 2009/104371

  By the way, the above-described heating process is performed in a chamber capable of accommodating a substrate. However, there has been a problem that sublimates adhere to the inner surface of the chamber.

  In view of the circumstances as described above, it is an object of the present invention to provide a substrate heating apparatus, a substrate processing system, and a substrate heating method that can prevent sublimation from adhering to the inner surface of a chamber.

  A substrate heating apparatus according to an aspect of the present invention includes a chamber in which an accommodation space capable of accommodating a substrate coated with a solution is formed, a decompression unit capable of decompressing an atmosphere of the accommodation space, and one side of the substrate And a substrate heating section that is arranged on at least one of the other side and that can heat the substrate, and a chamber heating section that can heat at least a part of the inner surface of the chamber.

  According to this structure, the temperature fall of the inner surface of a chamber can be suppressed by including the chamber heating part which can heat at least one part of the inner surface of a chamber. Therefore, it is possible to suppress the gas in the chamber accommodation space from being cooled by the inner surface of the chamber and becoming a solid deposit (sublimation product). Therefore, it is possible to suppress the sublimate from adhering to the inner surface of the chamber.

In the substrate heating apparatus, the chamber may include a peripheral wall that covers the periphery of the substrate, and the chamber heating unit may be disposed at least on the peripheral wall.
According to this configuration, the temperature drop on the inner surface of the peripheral wall of the chamber can be suppressed. Therefore, it can suppress that the gas in the storage space of a chamber is cooled by the inner surface of the surrounding wall of a chamber, and becomes a sublimate. Therefore, it is possible to suppress the sublimate from adhering to the inner surface of the peripheral wall of the chamber.

In the substrate heating apparatus, the decompression unit may include a vacuum pipe connected to the chamber, and may further include a vacuum pipe heating unit capable of heating at least a part of the inner surface of the vacuum pipe.
According to this configuration, the temperature drop on the inner surface of the vacuum pipe can be suppressed. Therefore, it can suppress that the gas which passes vacuum piping is cooled by the inner surface of vacuum piping, and becomes a sublimate. Therefore, it can suppress that a sublimate adheres to the inner surface of vacuum piping.

In the substrate heating apparatus, the substrate heating unit may include an infrared heater capable of heating the substrate with infrared rays, and at least a part of the inner surface of the chamber may be a chamber-side reflection surface that reflects the infrared rays. Good.
According to this configuration, at least a part of the infrared light reflected by the chamber-side reflecting surface is absorbed by the substrate, so that the heating of the substrate can be promoted. On the other hand, the output of the infrared heater can be reduced based on the temperature rise of the substrate due to the infrared rays reflected by the chamber side reflection surface. By the way, in a system in which hot air is circulated in an oven to heat the substrate, there is a possibility that foreign matter is wound up in the accommodation space of the substrate by circulation of the hot air. On the other hand, according to this configuration, the substrate can be heated in a state where the atmosphere of the accommodation space of the substrate is reduced, so that no foreign matter is wound up in the accommodation space of the substrate. Therefore, it is suitable for suppressing foreign matter from adhering to the inner surface of the chamber or the substrate.

In the substrate heating apparatus, a gas supply unit capable of adjusting a state of the accommodation space by supplying an inert gas to the accommodation space, and the inert gas supplied from the gas supply unit is directed to the substrate. And a gas diffusing portion that diffuses.
By the way, when the inert gas is jetted toward the inner surface of the peripheral wall of the chamber, foreign substances are wound up in the accommodation space of the substrate by convection in the chamber after the inert gas collides with the inner surface of the peripheral wall of the chamber. There is a possibility that. On the other hand, according to this configuration, since the inert gas is diffused toward the substrate, it is possible to suppress the convection of the inert gas in the chamber and to prevent foreign matter from being wound up in the accommodation space of the substrate. be able to. Therefore, it is suitable for suppressing foreign matter from adhering to the inner surface of the chamber or the substrate.

In the above substrate heating apparatus, the gas supply unit may include a gas supply pipe connected to the chamber, and may further include a gas supply pipe heating unit capable of heating at least a part of the inner surface of the gas supply pipe. Good.
According to this structure, the temperature fall of the inner surface of gas supply piping can be suppressed. Therefore, it can suppress that the gas which passes gas supply piping is cooled by the inner surface of gas supply piping, and becomes a sublimate. Therefore, it can suppress that a sublimate adheres to the inner surface of gas supply piping.

The substrate heating apparatus may further include a substrate carry-in / out portion capable of carrying the substrate in and out of the accommodation space and a substrate carry-in / out portion heating portion capable of heating at least a part of the substrate carry-in / out portion. Good.
According to this configuration, the temperature drop at the substrate carry-in / out section can be suppressed. Therefore, it can suppress that the gas which passes a board | substrate carrying in / out opening | mouth is cooled by a board | substrate carrying in / out part, and becomes a sublimation. Therefore, it is possible to suppress the sublimate from adhering to the substrate carry-in / out section.

The substrate heating apparatus may further include a heat insulating member that covers at least a part of the chamber heating unit from the outside of the chamber.
According to this configuration, since heat transfer to the outside of the chamber can be suppressed, the inner surface of the chamber can be efficiently heated by the chamber heating unit.

The substrate heating apparatus may further include a cover member that covers at least a part of the heat insulating member from the outside of the chamber.
According to this configuration, since the chamber heating unit and the heat insulating member can be protected, the inner surface of the chamber can be stably and efficiently heated by the chamber heating unit.

In the substrate heating apparatus, the decompression unit includes a vacuum pipe connected to the chamber, liquefies a gas passing through the vacuum pipe, and can recover a solvent volatilized from the solution applied to the substrate. A gas liquefaction recovery unit may be further provided.
According to this configuration, since the gas passing through the vacuum pipe can be liquefied, the gas passing through the vacuum pipe can be prevented from flowing back into the chamber. In addition, since the solvent volatilized from the solution applied to the substrate can be recovered, it is possible to prevent the solvent volatilized from the solution from being discharged to the factory side. Further, when the gas liquefaction recovery unit is connected to the line of the decompression unit (vacuum pump), it is possible to prevent the solvent volatilized from the solution from being liquefied again and flowing back into the vacuum pump. Furthermore, the solvent volatilized from the solution can be reused as the cleaning liquid. For example, the cleaning liquid can be used for cleaning the tip of the nozzle, cleaning the liquid adhering to the member that scrapes off the liquid adhering to the nozzle, and the like.

In the substrate heating apparatus, the substrate heating unit includes a hot plate disposed on one side of the substrate and an infrared heater disposed on the other side of the substrate and capable of heating the substrate with infrared rays. May be included.
By the way, in a system in which hot air is circulated in an oven to heat the substrate, there is a possibility that foreign matter is wound up in the accommodation space of the substrate by circulation of the hot air. On the other hand, according to this configuration, the substrate can be heated in a state where the atmosphere of the accommodation space of the substrate is reduced, so that no foreign matter is wound up in the accommodation space of the substrate. Therefore, it is suitable for suppressing foreign matter from adhering to the inner surface of the chamber or the substrate. In addition, since the heating temperature of the substrate can be made uniform in the plane of the substrate by the hot plate arranged on one side of the substrate, the film characteristics can be improved. For example, the in-plane uniformity of the heating temperature of the substrate can be improved by heating the substrate in a state in which one surface of the hot plate is in contact with the second surface of the substrate.

In the above substrate heating apparatus, the chamber is disposed on one side of the substrate, on the other side of the substrate, and on a top plate facing the bottom plate, and on the top plate and the bottom plate. A peripheral wall connected to an outer peripheral edge, the hot plate is disposed on the bottom plate side, the infrared heater is disposed on the top plate side, and the chamber heating unit is disposed on at least the peripheral wall. May be.
According to this configuration, the temperature drop on the inner surface of the bottom plate of the chamber can be suppressed by the hot plate. In addition, the temperature drop on the inner surface of the top plate of the chamber can be suppressed by the infrared heater. In addition, the temperature reduction of the inner surface of the peripheral wall of the chamber can be suppressed by the chamber heating unit. That is, the temperature drop on the inner surface of the entire chamber can be suppressed. Therefore, it can suppress that the gas in the storage space of a chamber is cooled by the inner surface of the whole chamber, and becomes a sublimate. Therefore, it is possible to suppress the sublimate from adhering to the inner surface of the entire chamber. In addition, when the chamber heating unit is disposed only on the peripheral wall of the chamber, the sublimate is formed on the inner surface of the entire chamber with a simple configuration as compared with the case where the chamber heating unit is further disposed on the top plate and the bottom plate. Can be prevented from adhering. By the way, since the support member of the infrared heater is arranged on the top plate of the chamber, there is a restriction on the layout when the chamber heating unit is arranged on the top plate of the chamber. On the other hand, according to this configuration, since the chamber heating unit is disposed only on the peripheral wall of the chamber, there is no restriction on the layout.

In the substrate heating apparatus, a gas supply unit capable of adjusting a state of the accommodation space by supplying an inert gas to the accommodation space, and the inert gas supplied from the gas supply unit is directed to the substrate. A gas diffusing section that diffuses in a gas, and the gas supply section may include a gas supply pipe connected to the top plate side of the peripheral wall.
By the way, when the inert gas is jetted toward the inner surface of the peripheral wall of the chamber, foreign substances are wound up in the accommodation space of the substrate by convection in the chamber after the inert gas collides with the inner surface of the peripheral wall of the chamber. There is a possibility that. On the other hand, according to this configuration, since the inert gas is diffused toward the substrate, it is possible to suppress the convection of the inert gas in the chamber and to prevent foreign matter from being wound up in the accommodation space of the substrate. be able to. Therefore, it is suitable for suppressing foreign matter from adhering to the inner surface of the chamber or the substrate. By the way, since the support member of the infrared heater is arranged on the top plate of the chamber, there is a restriction on layout when the gas supply pipe is connected to the top plate of the chamber. On the other hand, according to this configuration, since the gas supply pipe is connected to the peripheral wall of the chamber, there is no restriction on the layout. In addition, since the gas supply pipe is connected to the top plate side of the peripheral wall of the chamber, the inert gas is more easily diffused from the top plate side toward the substrate. Convection can be more effectively suppressed, and foreign matter can be more effectively avoided from being wound up in the accommodation space of the substrate.

In the above substrate heating apparatus, the hot plate further includes an infrared reflecting portion that is disposed between the hot plate and the infrared heater and has a hot plate side reflecting surface that reflects the infrared rays toward the hot plate. May include a mounting surface on which the infrared reflecting portion can be mounted.
According to this configuration, by including the hot plate side reflecting surface that is disposed between the hot plate and the infrared heater and reflects the infrared rays toward the hot plate, it is possible to prevent the infrared rays from being absorbed by the hot plate. Therefore, the temperature rise of the hot plate by infrared rays can be suppressed. Therefore, it is not necessary to consider the temperature drop time of the hot plate accompanying the temperature increase of the hot plate by infrared rays. Therefore, the tact time required for cooling the hot plate can be shortened. In addition, since at least a part of infrared rays reflected by the hot plate side reflecting surface is absorbed by the substrate, heating of the substrate can be promoted. On the other hand, the output of the infrared heater can be reduced in consideration of the temperature rise of the substrate due to the infrared rays reflected by the hot plate side reflecting surface. In addition, the hot plate includes a mounting surface on which the infrared reflecting unit can be mounted, so that when the atmosphere of the housing space of the substrate is reduced to a vacuum state, the mounting surface and the infrared reflecting unit on the hot plate Can be vacuum insulated. That is, the gap at the interface between the mounting surface and the infrared reflecting portion can function as a heat insulating layer. Therefore, the temperature rise of the hot plate by infrared rays can be suppressed. On the other hand, when nitrogen is supplied to the accommodation space of the substrate (N ₂ purge), the vacuum heat insulation between the mounting surface and the infrared reflecting portion can be released. Therefore, when the temperature of the hot plate is lowered, it can be estimated that the temperature of the infrared reflecting portion is also lowered.

In the substrate heating apparatus, the solution is applied only to the first surface of the substrate,
The hot plate may be disposed on a second surface side opposite to the first surface of the substrate.
According to this configuration, since the heat generated from the hot plate is transmitted from the second surface side of the substrate toward the first surface side, the substrate can be effectively heated. In addition, while the substrate is heated with a hot plate, the solution applied to the substrate can be volatilized or imidized (for example, degassing during film formation) can be performed efficiently.

In the substrate heating apparatus, at least one of the hot plate and the infrared heater may be capable of heating the substrate in a stepwise manner.
According to this configuration, as compared with the case where the hot plate and the infrared heater can heat the substrate only at a certain temperature, the substrate is efficiently heated so as to meet the film forming conditions of the solution applied to the substrate. be able to. Therefore, the solution applied to the substrate can be dried stepwise and cured well.

The substrate heating apparatus may further include a position adjusting unit capable of adjusting a relative position between at least one of the hot plate and the infrared heater and the substrate.
According to this configuration, it becomes easier to adjust the heating temperature of the substrate as compared with the case where the position adjusting unit is not provided. For example, when the substrate heating temperature is increased, the hot plate / infrared heater and the substrate can be brought close to each other, and when the substrate heating temperature is lowered, the hot plate / infrared heater can be separated from the substrate. Therefore, it becomes easy to heat the substrate step by step.

In the substrate heating apparatus, the position adjusting unit may further include a moving unit that allows the substrate to move between the hot plate and the infrared heater.
According to this configuration, by moving the substrate between the hot plate and the infrared heater, the heating temperature of the substrate can be adjusted in a state where at least one of the hot plate and the infrared heater is disposed at a fixed position. Therefore, it is not necessary to separately provide a device that can move at least one of the hot plate and the infrared heater, and the heating temperature of the substrate can be adjusted with a simple configuration.

In the substrate heating apparatus, a transport unit that can transport the substrate is provided between the hot plate and the infrared heater, and the transport unit passes through the moving unit. A part may be formed.
According to this configuration, when the substrate is moved between the hot plate and the infrared heater, it is possible to pass the passage portion, so that there is no need to move the substrate around the transfer portion. Therefore, it is not necessary to separately provide a device for moving the substrate around the transfer unit, and thus the substrate can be moved smoothly with a simple configuration.

In the substrate heating apparatus, the moving unit includes a plurality of pins that can support a second surface opposite to the first surface of the substrate and can move in a normal direction of the second surface, The tip of the pin may be arranged in a plane parallel to the second surface.
According to this configuration, since the substrate can be heated in a state where the substrate is stably supported, the solution applied to the substrate can be stably formed.

In the substrate heating apparatus, a plurality of insertion holes that open the hot plate in a normal direction of the second surface are formed in the hot plate, and tips of the plurality of pins are inserted into the plurality of insertion holes. You may be able to contact | abut to said 2nd surface through a hole.
According to this configuration, since the substrate can be transferred between the plurality of pins and the hot plate in a short time, the heating temperature of the substrate can be adjusted efficiently.

The substrate heating apparatus may further include a temperature detection unit capable of detecting the temperature of the substrate.
According to this configuration, the temperature of the substrate can be grasped in real time. For example, it is possible to suppress the temperature of the substrate from deviating from the target value by heating the substrate based on the detection result of the temperature detection unit.

In the substrate heating apparatus, the substrate and the substrate heating unit may be accommodated in the common chamber.
According to this structure, the heat processing by the substrate heating unit for the substrate can be performed in a single chamber. For example, the heat treatment using a hot plate and the heat treatment using an infrared heater on the substrate can be performed at once in a common chamber. That is, it takes no time to transport the substrate between two different chambers, as in the case where the hot plate and the infrared heater are housed in different chambers. Therefore, the heat treatment of the substrate can be performed more efficiently. In addition, the entire apparatus can be downsized as compared with the case where two different chambers are provided.

  The substrate processing system which concerns on 1 aspect of this invention is characterized by including the said substrate heating apparatus.

  According to this configuration, by including the substrate heating device, it is possible to prevent the sublimate from adhering to the inner surface of the chamber in the substrate processing system.

  The substrate heating method according to an aspect of the present invention includes a housing step of housing a substrate coated with a solution in a housing space inside a chamber, a decompressing step of decompressing the atmosphere of the housing space, and one side and the other side of the substrate. And a chamber heating step of heating at least a part of the inner surface of the chamber using a substrate heating unit disposed on at least one side of the chamber.

  According to this method, the temperature drop of the inner surface of the chamber can be suppressed by heating at least a part of the inner surface of the chamber in the chamber heating step. Therefore, it can suppress that the gas in the storage space of a chamber is cooled by the inner surface of a chamber, and becomes a sublimate. Therefore, it is possible to suppress the sublimate from adhering to the inner surface of the chamber.

The substrate heating method described above may further include a vacuum pipe heating step of heating at least a part of the inner surface of the vacuum pipe connected to the chamber.
According to this method, the temperature drop on the inner surface of the vacuum pipe can be suppressed. Therefore, it can suppress that the gas which passes vacuum piping is cooled by the inner surface of vacuum piping, and becomes a sublimate. Therefore, it can suppress that a sublimate adheres to the inner surface of vacuum piping.

  ADVANTAGE OF THE INVENTION According to this invention, the substrate heating apparatus which can suppress that a sublimate adheres to the inner surface of a chamber, a substrate processing system, and a substrate heating method can be provided.

It is a perspective view of the substrate heating device concerning a first embodiment. It is a figure containing the cross section of the heating unit in the board | substrate heating apparatus which concerns on 1st embodiment, a heat insulation member, and a cover member. It is a side view which shows a hot plate and its peripheral structure. It is a figure for demonstrating the arrangement | positioning relationship of a conveyance roller, a board | substrate, and a hot plate. It is a figure for demonstrating an example of operation | movement of the substrate heating apparatus which concerns on 1st embodiment. It is operation | movement explanatory drawing of the substrate heating apparatus which concerns on 1st embodiment following FIG. It is operation | movement explanatory drawing of the substrate heating apparatus which concerns on 1st embodiment following FIG. It is a figure containing the cross section of the heating unit in the board | substrate heating apparatus which concerns on 2nd embodiment, a heat insulation member, and a cover member. It is a figure for demonstrating an example of operation | movement of the substrate heating apparatus which concerns on 2nd embodiment. It is operation | movement explanatory drawing of the substrate heating apparatus which concerns on 2nd embodiment following FIG. It is operation | movement explanatory drawing of the substrate heating apparatus which concerns on 2nd embodiment following FIG.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following description, an XYZ orthogonal coordinate system is set, and the positional relationship of each member will be described with reference to this XYZ orthogonal coordinate system. A predetermined direction in the horizontal plane is defined as the X direction, a direction orthogonal to the X direction in the horizontal plane is defined as the Y direction, and a direction orthogonal to the X direction and the Y direction (that is, the vertical direction) is defined as the Z direction.

(First embodiment)
<Substrate heating device>
FIG. 1 is a perspective view of a substrate heating apparatus 1 according to the first embodiment.
As shown in FIG. 1, the substrate heating apparatus 1 includes a chamber 2, a substrate carry-in / out unit 24, a decompression unit 3, a gas supply unit 4, a gas diffusion unit 40 (see FIG. 2), a hot plate 5, an infrared heater 6, and position adjustment. Unit 7, transport unit 8, temperature detection unit 9, gas liquefaction recovery unit 11, infrared reflection unit 30, heating unit 80, heat insulating member 26, cover member 27, and control unit 15. The control unit 15 performs overall control of the components of the substrate heating apparatus 1. For convenience, in FIG. 1, a part of the chamber 2 (a part excluding a part of the top plate 21), the substrate carry-in / out part 24, and the gas supply part 4 are shown by two-dot chain lines.

<Chamber>
The chamber 2 can accommodate the substrate 10, the hot plate 5, and the infrared heater 6. An accommodation space 2 </ b> S capable of accommodating the substrate 10 is formed inside the chamber 2. The substrate 10, the hot plate 5 and the infrared heater 6 are accommodated in a common chamber 2. The chamber 2 is formed in a rectangular parallelepiped box shape. Specifically, the chamber 2 includes a rectangular plate-shaped top plate 21, a rectangular plate-shaped bottom plate 22 facing the top plate 21, and a rectangular frame-shaped peripheral wall 23 connected to the outer periphery of the top plate 21 and the bottom plate 22. Is formed. For example, a substrate carry-in / out port 23 a for carrying the substrate 10 in and out of the chamber 2 is provided on the −X direction side of the peripheral wall 23.

  The chamber 2 is configured to be able to accommodate the substrate 10 in a sealed space. For example, the airtightness in the chamber 2 can be improved by connecting the connection portions of the top plate 21, the bottom plate 22, and the peripheral wall 23 without gaps by welding or the like.

  The inner surface of the chamber 2 is a chamber-side reflection surface 2a (see FIG. 2) that reflects infrared rays from the infrared heater 6. For example, the inner surface of the chamber 2 is a mirror surface (reflection surface) made of a metal such as aluminum. Thereby, compared with the case where the inner surface of the chamber 2 can absorb infrared rays, the temperature uniformity in the chamber 2 can be improved.

  The chamber side reflection surface 2 a is provided on the entire inner surface of the chamber 2. The chamber side reflection surface 2a is mirror-finished. Specifically, the surface roughness (Ra) of the chamber-side reflecting surface 2a is about 0.01 μm and Rmax is about 0.1 μm. In addition, the surface roughness (Ra) of the chamber side reflection surface 2a is measured by a measuring instrument (Surfcom 1500SD2) manufactured by Tokyo Seimitsu.

<Substrate carry-in / out section>
The substrate carry-in / out section 24 is provided on the −X direction side of the peripheral wall 23. The substrate carry-in / out section 24 enables the substrate 10 to be carried into the accommodation space 2S and allows the substrate 10 to be discharged from the accommodation space 2S. For example, the substrate carry-in / out section 24 is movable so as to open and close the substrate carry-in / out port 23a. Specifically, the substrate carry-in / out section 24 is movable in a direction along the peripheral wall 23 (Z direction or Y direction).

<Decompression section>
The decompression unit 3 can decompress the inside of the chamber 2. The decompression unit 3 includes a vacuum pipe 3 a connected to the chamber 2. The vacuum pipe 3a is a cylindrical pipe extending in the Z direction. For example, a plurality of vacuum pipes 3a are arranged at intervals in the X direction. For convenience, only one vacuum pipe 3a is shown in FIG. The number of vacuum pipes 3a installed is not limited.

  The vacuum pipe 3a shown in FIG. 1 is connected to a portion of the bottom plate 22 near the substrate carry-in / out port 23a on the −X direction side. In addition, the connection site | part of the vacuum piping 3a is not limited to the part near the board | substrate carrying in / out port 23a of the -X direction side of the baseplate 22. FIG. The vacuum pipe 3 a only needs to be connected to the chamber 2.

  For example, the decompression unit 3 includes a decompression mechanism such as a pump mechanism. The decompression mechanism includes a vacuum pump 13. The vacuum pump 13 is connected to a line extending from a portion (lower end portion) opposite to the connection portion (upper end portion) with the chamber 2 in the vacuum pipe 3a.

  The decompression unit 3 can decompress the atmosphere of the accommodation space 2S of the substrate 10 on which a solution for forming a polyimide film (polyimide) (hereinafter referred to as “polyimide-forming liquid”) is applied. For example, the polyimide forming liquid contains polyamic acid or polyimide powder. The polyimide forming liquid is applied only to the first surface 10a (upper surface) of the substrate 10 having a rectangular plate shape. The solution is not limited to the polyimide forming solution. The solution may be any solution for forming a predetermined film on the substrate 10.

<Gas supply unit>
The gas supply unit 4 can adjust the state of the internal atmosphere of the chamber 2. The gas supply unit 4 includes a gas supply pipe 4 a connected to the chamber 2. The gas supply pipe 4a is a cylindrical pipe extending in the X direction. The gas supply pipe 4 a is connected to a portion of the peripheral wall 23 near the top plate 21 on the + X direction side. In addition, the connection site | part of the gas supply piping 4a is not limited to the part near the top plate 21 of the surrounding wall 23 at the + X direction side. The gas supply pipe 4 a only needs to be connected to the chamber 2.

The gas supply unit 4 can adjust the state of the accommodation space 2S by supplying an inert gas to the accommodation space 2S. The gas supply unit 4 supplies an inert gas such as nitrogen (N ₂ ), helium (He), and argon (Ar) into the chamber 2. The gas supply unit 4 may use the gas for substrate cooling by supplying the gas when the temperature of the substrate is lowered.

The gas supply unit 4 can adjust the oxygen concentration in the internal atmosphere of the chamber 2. The oxygen concentration (mass basis) of the internal atmosphere of the chamber 2 is preferably as low as possible. Specifically, the oxygen concentration in the internal atmosphere of the chamber 2 is preferably 100 ppm or less, and more preferably 20 ppm or less.
For example, as described later, in the atmosphere when curing the polyimide forming liquid applied to the substrate 10, the curing of the polyimide forming liquid is facilitated by setting the oxygen concentration below the preferable upper limit. be able to.

<Gas diffusion part>
As shown in FIG. 2, the −X direction side of the gas supply pipe 4 a protrudes into the chamber 2. The gas diffusion part 40 is connected to the protruding end of the gas supply pipe 4 a in the chamber 2. The gas diffusion unit 40 is disposed in a portion near the top plate 21 in the chamber 2. The gas diffusion unit 40 is disposed between the infrared heater 6 and the transport unit 8 in the chamber 2. The gas diffusion unit 40 diffuses the inert gas supplied from the gas supply pipe 4 a toward the substrate 10.

  The gas diffusion portion 40 includes a cylindrical diffusion tube 41 extending in the X direction, a lid portion 42 that closes the −X direction end of the diffusion tube 41, a + X direction end of the diffusion tube 41, and − of the gas supply pipe 4a. And a connecting portion 43 that connects the X-direction end (projecting end). The outer diameter of the diffusion pipe 41 is larger than the outer diameter of the gas supply pipe 4a. A plurality of pores (not shown) are formed on the −Z direction side (lower side) of the diffusion tube 41. That is, the lower part of the diffusion tube 41 is formed in a porous shape (porous body). The internal space of the gas supply pipe 4 a communicates with the diffusion pipe 41 through the connecting portion 43.

  The inert gas supplied from the gas supply pipe 4 a enters the diffusion pipe 41 through the connecting portion 43. The inert gas that has entered the diffusion tube 41 passes through a plurality of pores formed in the lower portion of the diffusion tube 41 and is diffused downward. That is, the inert gas supplied from the gas supply pipe 4 a is diffused toward the substrate 10 by passing through the diffusion pipe 41.

<Hot plate>
As shown in FIG. 1, the hot plate 5 is disposed below the chamber 2. The hot plate 5 is a substrate heating unit that is disposed on one side of the substrate 10 and that can heat the substrate 10. The hot plate 5 can heat the substrate 10 at a first temperature. The hot plate 5 can heat the substrate 10 in stages. For example, the temperature range including the first temperature is a range of 20 ° C. or more and 300 ° C. or less. The hot plate 5 is disposed on the second surface 10 b (lower surface) side opposite to the first surface 10 a of the substrate 10. The hot plate 5 is disposed on the bottom plate 22 side of the chamber 2.

  The hot plate 5 has a rectangular plate shape. The hot plate 5 can support the infrared reflecting portion 30 from below.

FIG. 3 is a side view showing the hot plate 5 and its peripheral structure.
As shown in FIG. 3, the hot plate 5 includes a heater 5b that is a heating source and a base plate 5c that covers the heater 5b.
The heater 5b is a planar heating element parallel to the XY plane.
The base plate 5c includes an upper plate 5d that covers the heater 5b from above, and a lower plate 5e that covers the heater 5b from below. The upper plate 5d and the lower plate 5e have a rectangular plate shape. The upper plate 5d is thicker than the lower plate 5e.

  In FIG. 3, reference numeral 18 denotes a heater temperature detector that can detect the temperature of the heater in the hot plate 5, and reference numeral 19 denotes a plate temperature detector that can detect the temperature of the upper plate 5 d in the hot plate 5. For example, the heater temperature detector 18 and the plate temperature detector 19 are contact temperature sensors such as thermocouples.

  The hot plate 5 (that is, the upper plate 5d) includes a mounting surface 5a (upper surface) on which the infrared reflecting unit 30 can be mounted. The mounting surface 5 a is a flat surface along the back surface of the infrared reflecting unit 30. The mounting surface 5a is subjected to an alumite treatment. The placement surface 5a includes a plurality of (for example, four in the present embodiment) placement regions (in FIG. 3, two placement regions A1, located on the −Y direction side) partitioned within the placement surface 5a. Only A2 is shown). The placement area has a rectangular shape having a length in the X direction in plan view. The number of placement areas is not limited to four and can be changed as appropriate.

<Infrared heater>
As shown in FIG. 1, the infrared heater 6 is disposed above the chamber 2. The infrared heater 6 can heat the substrate 10 with infrared rays. The infrared heater 6 is a substrate heating unit that is disposed on the other side of the substrate 10 and can heat the substrate 10. The infrared heater 6 can heat the substrate 10 at a second temperature higher than the first temperature. The infrared heater 6 is provided separately from the hot plate 5. The infrared heater 6 can heat the substrate 10 in stages. For example, the temperature range including the second temperature is a range of 200 ° C. or more and 600 ° C. or less. The infrared heater 6 is disposed on the first surface 10 a side of the substrate 10. The infrared heater 6 is disposed on the top plate 21 side of the chamber 2.

  The infrared heater 6 is supported by the top plate 21. A support member (not shown) for the infrared heater 6 is provided between the infrared heater 6 and the top plate 21. The infrared heater 6 is fixed at a fixed position near the top plate 21 in the chamber 2. For example, the peak wavelength range of the infrared heater 6 is 1.0 μm or more and 4 μm or less. The peak wavelength range of the infrared heater 6 is not limited to the above range, and can be set to various ranges according to required specifications.

<Position adjustment unit>
The position adjusting unit 7 is disposed below the chamber 2. The position adjusting unit 7 can adjust the relative positions of the hot plate 5 and the infrared heater 6 and the substrate 10. The position adjusting unit 7 includes a moving unit 7a and a driving unit 7b. The moving part 7a is a columnar member that extends vertically (Z direction). The upper end of the moving part 7 a is fixed to the lower surface of the hot plate 5. The drive unit 7b allows the moving unit 7a to move up and down. The moving unit 7 a enables the substrate 10 to move between the hot plate 5 and the infrared heater 6. Specifically, the moving unit 7a moves the substrate 10 up and down by driving the driving unit 7b while the substrate 10 is supported by the infrared reflecting unit 30 (see FIGS. 6 and 7).

  The drive unit 7 b is disposed outside the chamber 2. Therefore, even if particles are generated as the driving unit 7b is driven, it is possible to avoid intrusion of particles into the chamber 2 by making the chamber 2 a sealed space.

<Transport section>
The transfer unit 8 is disposed between the hot plate 5 and the infrared heater 6 in the chamber 2. The transport unit 8 can transport the substrate 10. The transport unit 8 is formed with a passage unit 8h that can pass through the moving unit 7a. The transport unit 8 includes a plurality of transport rollers 8 a disposed along the X direction that is the transport direction of the substrate 10.

  The plurality of transport rollers 8a are disposed apart from the + Y direction side and the −Y direction side of the peripheral wall 23. That is, the passing portion 8h is a space between the transport roller 8a on the + Y direction side of the peripheral wall 23 and the transport roller 8a on the −Y direction side of the peripheral wall 23.

  For example, a plurality of shafts (not shown) extending in the Y direction are arranged at intervals along the X direction on each of the + Y direction side and the −Y direction side of the peripheral wall 23. Each transport roller 8a is rotationally driven around each shaft by a drive mechanism (not shown).

FIG. 4 is a diagram for explaining the positional relationship among the transport roller 8 a, the substrate 10, and the hot plate 5. FIG. 4 corresponds to a top view of the substrate heating apparatus 1 (see FIG. 1). For convenience, in FIG. 4, the chamber 2 is indicated by a two-dot chain line.
In FIG. 4, a symbol L <b> 1 is an interval (hereinafter referred to as “roller separation interval”) between the conveyance roller 8 a on the + Y direction side of the peripheral wall 23 and the conveyance roller 8 a on the −Y direction side of the peripheral wall 23. Reference numeral L2 is the length of the substrate 10 in the Y direction (hereinafter referred to as “substrate length”). Reference numeral L3 denotes the length of the hot plate 5 in the Y direction (hereinafter referred to as “hot plate length”). The hot plate length L3 is substantially the same length as the length of the infrared reflecting unit 30 in the Y direction.

  As shown in FIG. 4, the roller separation interval L1 is smaller than the substrate length L2 and larger than the hot plate length L3 (L3 <L1 <L2). Since the roller separation interval L1 is larger than the hot plate length L3, the moving part 7a can pass through the passing part 8h together with the hot plate 5 and the infrared reflecting part 30 (see FIGS. 6 and 7).

<Temperature detector>
As shown in FIG. 1, the temperature detection unit 9 is disposed outside the chamber 2. The temperature detector 9 can detect the temperature of the substrate 10. Specifically, the temperature detection unit 9 is installed on the top plate 21. A window (not shown) is attached to the top plate 21. The temperature detection unit 9 detects the temperature of the substrate 10 through the window of the top plate 21. For example, the temperature detection unit 9 is a non-contact temperature sensor such as a radiation thermometer. Although only one temperature detection unit 9 is illustrated in FIG. 1, the number of temperature detection units 9 is not limited to one and may be plural. For example, it is preferable to arrange a plurality of temperature detection units 9 at the center and four corners of the top plate 21.

<Gas liquefaction recovery unit>
The gas liquefaction recovery unit 11 is connected to the line of the decompression unit 3 (vacuum pump 13). The gas liquefaction recovery unit 11 is disposed downstream of the vacuum pump 13 in the line of the decompression unit 3. The gas liquefying / recovering unit 11 can liquefy the gas passing through the vacuum pipe 3 a and recover the solvent volatilized from the polyimide forming liquid applied to the substrate 10.

  If the gas liquefaction recovery unit 11 is arranged on the upstream side of the vacuum pump 13 in the line of the decompression unit 3, the liquid liquefied on the upstream side may be vaporized at the next decompression, and the evacuation time is There is a possibility of delay. On the other hand, according to the present embodiment, the gas liquefaction recovery unit 11 is arranged on the downstream side of the vacuum pump 13 in the line of the decompression unit 3, so that the liquid liquefied on the downstream side is vaporized at the time of the next decompression. Therefore, it is possible to avoid delaying the evacuation time.

<Oscillating part>
The substrate heating apparatus 1 may further include a swinging portion (not shown) that can swing the substrate 10. For example, the swinging part swings the substrate 10 in a direction along the XY plane or a direction along the Z direction in a state where the substrate 10 is heated. Thereby, since it can heat, making the board | substrate 10 rock | fluctuate, the temperature uniformity of the board | substrate 10 can be improved.
For example, the swing part may be provided in the position adjustment part 7. In addition, the arrangement position of the swinging part is not limited.

<Infrared reflector>
The infrared reflection unit 30 includes a hot plate side reflection surface 30 a that reflects infrared rays from the infrared heater 6 toward the hot plate 5. The hot plate side reflecting surface 30 a is disposed between the hot plate 5 and the infrared heater 6.

  The hot plate side reflecting surface 30a is mirror-finished. Specifically, the surface roughness (Ra) of the hot plate side reflecting surface 30a is set to about 0.01 μm and Rmax is about 0.1 μm. In addition, the surface roughness (Ra) of the hot plate side reflecting surface 30a is measured with a measuring instrument (Surfcom 1500SD2) manufactured by Tokyo Seimitsu.

  As shown in FIG. 3, a plurality of substrate support protrusions 35 (not shown in FIG. 1) that can support the substrate 10 (only 10 located on the −Y direction side are shown in FIG. 3) are supported on the hot plate side reflecting surface 30a. Abbreviation) is provided. The board | substrate support convex part 35 is a cylindrical pin. The substrate support convex portion 35 is not limited to a cylindrical shape. For example, the substrate support convex portion 35 may be a spherical body such as a ceramic ball. Further, the substrate support convex portion 35 may have a prismatic shape and can be appropriately changed.

  The plurality of substrate support convex portions 35 are arranged at regular intervals in the X direction and the Y direction within the surface of the hot plate side reflection surface 30a. For example, the arrangement interval of the substrate support convex portions 35 is about 50 mm. For example, the height of the substrate support convex portion 35 is set to about 0.1 mm. For example, the height of the substrate support convex portion 35 can be adjusted in the range of 0.05 mm to 3 mm. In addition, the arrangement | positioning space | interval of the board | substrate support convex part 35 and the height of the board | substrate support convex part 35 are not limited to the said dimension, The board | substrate 10 is supported in the state which formed the clearance gap between the hotplate side reflective surface 30a and the board | substrate 10. It can be appropriately changed within a possible range.

  The infrared reflection unit 30 is divided into a plurality of (for example, four in this embodiment) placement areas (only two placement areas A1 and A2 located on the −Y direction side are shown in FIG. 3). (For example, in the present embodiment, there are four) infrared reflectors (in FIG. 3, only two infrared reflectors 31 and 32 located on the −Y direction side are shown). The number of infrared reflectors is not limited to four and can be changed as appropriate. For example, there may be only one infrared reflector.

  The plurality of infrared reflectors have substantially the same size. Thereby, the infrared reflecting plate mounted in each mounting area can be shared. The size of the infrared reflecting plate may be different from one another and can be changed as appropriate.

Two adjacent infrared reflectors 31 and 32 are arranged with an interval S1. The interval S1 is set to a size that allows the thermal expansion of the two adjacent infrared reflectors 31 and 32. Specifically, an interval S1 between two infrared reflection plates 31 and 32 adjacent in the X direction is set to a size capable of absorbing expansion of the infrared reflection plates 31 and 32 in the X direction. Although not shown, the distance between two infrared reflecting plates adjacent in the Y direction is set to a size that can absorb expansion of the infrared reflecting plate in the Y direction.
The arrangement structure of the infrared reflector is not limited to the above. For example, the infrared reflecting plate may be pressed and fixed from the side surface with a biasing member. For example, as the urging member, a spring that expands and contracts to absorb the expansion of the infrared reflecting plate can be used.
Further, when the infrared reflecting portion 30 is a single plate member of G6 size (vertical 150 cm × horizontal 185 cm) or more, the plate member may be fixed by pressing from the side surface with a biasing member such as a spring. By the way, if the plate member is G6 size or more, even one plate member has a considerable weight. However, the plate member can be easily fixed by pressing and fixing the plate member with a biasing member such as a spring from the side.

<Removable structure between hot plate and infrared reflecting part>
Although not shown, an attachment / detachment structure is provided between the hot plate 5 and the infrared reflection unit 30 so that the infrared reflection unit 30 can be attached to and detached from the hot plate 5.
For example, the attachment / detachment structure includes a protruding portion that protrudes from the placement surface 5a and an insertion portion that is formed on the infrared reflecting portion 30 and into which the protruding portion is inserted. The detachable structure may include a convex portion that protrudes from the lower surface of the infrared reflecting portion 30 and a concave portion that is formed on the placement surface 5a and into which the convex portion is inserted.

<Cooling mechanism>
As shown in FIG. 3, the substrate heating apparatus 1 further includes a cooling mechanism 50 that can cool the hot plate 5.
The cooling mechanism 50 is disposed inside the hot plate 5 and includes a refrigerant passage portion 51 that allows passage of the refrigerant. For example, the refrigerant is air. The refrigerant is not limited to gas such as air. For example, the refrigerant may be a liquid such as water.

  The refrigerant passage 51 includes a plurality of cooling passages extending in one direction parallel to the placement surface 5a and arranged in a direction parallel to the placement surface 5a and intersecting the one direction. That is, the refrigerant passage 51 includes a plurality of cooling passages extending in the X direction and arranged in the Y direction.

  The refrigerant passage 51 further includes cooling manifolds 52 and 53 connected to the plurality of cooling passages on one end side and the other end side of the hot plate 5. The cooling manifolds 52 and 53 include a first manifold 52 connected to the plurality of cooling passages on the −X direction side of the hot plate 5, and a second manifold 53 connected to the plurality of cooling passages on the + X direction side of the heating unit. It is equipped with.

  The first manifold 52 includes a first connection path 52a extending in the Y direction so as to connect the −X direction ends of the plurality of cooling passages. The first manifold 52 is provided with a first pipe 54 connected to the first connection path 52a.

  The second manifold 53 includes a second connection path 53a extending in the Y direction so as to connect the + X direction ends of the plurality of cooling passages. The second manifold 53 is provided with a second pipe 55 connected to the second connection path 53a.

For example, air is introduced into the internal space of the first pipe 54 by a blower (not shown). As a result, the air from the blower flows through the first piping 54 and the first connection path 52a toward the + X direction side, and then passes through the second connection path 53a and the second pipe 55 to the outside. It is supposed to be discharged.
The introduction of air is not limited to the blower and may be performed with compressed air using dry air.

<Heating unit>
As shown in FIG. 2, the heating unit 80 includes a chamber heating unit 81, a vacuum pipe heating unit 82, a gas supply pipe heating unit 83, and a substrate carry-in / out unit heating unit 84. For example, the heating unit 80 includes a planar heating element having flexibility as a heating member of each component. For example, the planar heating element is a rubber heater. The heating member is not limited to a rubber heater, and may be a hot plate or a combination of a rubber heater and a hot plate, and can be changed as appropriate.

  The heating unit 80 can selectively heat at least one of the chamber heating unit 81, the vacuum pipe heating unit 82, the gas supply pipe heating unit 83, and the substrate carry-in / out unit heating unit 84. The control unit 15 (see FIG. 1) controls the heating unit 80 to selectively select at least one of the chamber heating unit 81, the vacuum pipe heating unit 82, the gas supply pipe heating unit 83, and the substrate carry-in / out unit heating unit 84. Let it heat. For example, when the inner surface of the vacuum pipe 3a is likely to fall, the control unit 15 controls the heating unit 80 to selectively heat the vacuum pipe heating unit 82.

<Chamber heating section>
The chamber heating unit 81 can heat at least a part of the inner surface of the chamber 2. In the embodiment, the chamber heating unit 81 is disposed only on the peripheral wall 23 of the chamber 2. The chamber heating unit 81 is a planar heating element along the outer surface of the peripheral wall 23 of the chamber 2. In the embodiment, the chamber heating unit 81 covers the entire outer surface of the peripheral wall 23 of the chamber 2. For example, the in-plane temperature uniformity of the inner surface of the peripheral wall 23 of the chamber 2 can be improved by heating the peripheral wall 23 of the chamber 2 with the chamber heating unit 81 covered on the entire outer surface of the peripheral wall 23 of the chamber 2. it can.

  For example, the chamber heating unit 81 can be heated so that the temperature of the inner surface of the peripheral wall 23 of the chamber 2 is in the range of 40 ° C. or more and 150 ° C. or less. When the polyimide forming solution is applied to the substrate 10, the temperature of the inner surface of the peripheral wall 23 of the chamber 2 is set to 75 ° C. or higher and 105 ° C. from the viewpoint of suppressing the sublimation from adhering to the inner surface of the peripheral wall 23 of the chamber 2. It is preferable to set in the range below ℃, and it is particularly preferable to set to 90 ℃. The temperature of the inner surface of the peripheral wall 23 of the chamber 2 is not limited to the above range, and the range in which the gas in the housing space 2S of the chamber 2 can be suppressed from being cooled by the inner surface of the peripheral wall 23 of the chamber 2 to become a sublimated product. It may be set in.

<Vacuum pipe heating section>
The vacuum pipe heating unit 82 can heat at least a part of the inner surface of the vacuum pipe 3a. In the embodiment, the vacuum pipe heating unit 82 is a planar heating element along the outer surface of the vacuum pipe 3a. In the embodiment, the vacuum pipe heating unit 82 covers the entire outer surface of the vacuum pipe 3a. For example, the in-plane uniformity of the temperature of the inner surface of the vacuum pipe 3a can be improved by heating the vacuum pipe 3a in a state where the vacuum pipe heating unit 82 is covered on the entire outer surface of the vacuum pipe 3a.

<Gas supply piping heating section>
The gas supply pipe heating unit 83 can heat at least a part of the inner surface of the gas supply pipe 4a. In the embodiment, the gas supply pipe heating unit 83 is a planar heating element along the outer surface of the gas supply pipe 4a. In the embodiment, the gas supply pipe heating unit 83 covers the entire outer surface of the gas supply pipe 4a. For example, the in-plane uniformity of the temperature of the inner surface of the gas supply pipe 4a can be increased by heating the gas supply pipe 4a in a state where the gas supply pipe heating unit 83 is covered on the entire outer surface of the gas supply pipe 4a. .

<Substrate carry-in / out heating unit>
The substrate carry-in / out unit heating unit 84 can heat at least a part of the substrate carry-in / out unit 24. In the embodiment, the substrate carry-in / out unit heating unit 84 is a planar heating element along the outer surface of the substrate carry-in / out unit 24. In the embodiment, the substrate carry-in / out unit heating unit 84 covers the entire outer surface of the substrate carry-in / out unit 24.

<Heat insulation member>
The heat insulating member 26 covers at least a part of the chamber heating unit 81 from the outside of the chamber 2. In the embodiment, the heat insulating member 26 includes a chamber heat insulating member 26a, a vacuum pipe heat insulating member 26b, a gas supply pipe heat insulating member 26c, and a substrate carry-in / out part heat insulating member 26d. For example, the heat insulating member 26 includes a heat insulating material that covers the heating portion of each component. For example, the heat insulating material is a foam heat insulating material. The heat insulating material is not limited to the foam heat insulating material, and may be a fiber heat insulating material, or may have a structure in which air is interposed in a gap between a plurality of layers of glass sheets, and can be appropriately changed. .

  In the embodiment, the chamber heat insulating member 26 a covers the entire outer surface of the chamber heating unit 81. The vacuum pipe heat insulating member 26 b covers the entire outer surface of the vacuum pipe heating unit 82. The gas supply pipe heat insulating member 26 c covers the entire outer surface of the gas supply pipe heating unit 83. The substrate carry-in / out part heat insulating member 26 d covers the entire outer surface of the substrate carry-in / out part heating unit 84.

<Cover member>
The cover member 27 covers at least a part of the heat insulating member 26 from the outside of the chamber 2. In the embodiment, the cover member 27 includes a chamber cover member 27a, a vacuum pipe cover member 27b, a gas supply pipe cover member 27c, and a substrate carry-in / out section cover member 27d. For example, the cover member 27 includes a protective material that covers the heat insulating member of each component. For example, the protective material is made of metal. The protective material is not limited to metal, and may be made of resin, and can be changed as appropriate.

  In the embodiment, the chamber cover member 27a covers the entire outer surface of the chamber heat insulating member 26a. The vacuum pipe cover member 27b covers the entire outer surface of the vacuum pipe heat insulating member 26b. The gas supply pipe cover member 27c covers the entire outer surface of the gas supply pipe heat insulating member 26c. The substrate carry-in / out portion cover member 27d covers the entire outer surface of the substrate carry-in / out portion heat insulating member 26d.

<Substrate heating method>
Next, the substrate heating method according to this embodiment will be described. In the present embodiment, the substrate 10 is heated using the substrate heating apparatus 1 described above. Operations performed in the respective units of the substrate heating apparatus 1 are controlled by the control unit 15.

  FIG. 5 is a diagram for explaining an example of the operation of the substrate heating apparatus 1 according to the first embodiment. FIG. 6 is an operation explanatory diagram of the substrate heating apparatus 1 according to the first embodiment, following FIG. 5. FIG. 7 is an operation explanatory diagram of the substrate heating apparatus 1 according to the first embodiment, following FIG.

  For convenience, in FIGS. 5 to 7, among the components of the substrate heating apparatus 1, the substrate carry-in / out unit 24, the decompression unit 3, the gas supply unit 4, the gas diffusion unit 40, the temperature detection unit 9, the gas liquefaction recovery unit 11, Illustration of the cooling mechanism 50, the heating unit 80, the heat insulating member 26, the cover member 27, and the control unit 15 is omitted.

The substrate heating method according to the present embodiment includes a housing process, a decompression process, a substrate heating process, and a chamber heating process.
As shown in FIG. 5, in the accommodating step, the substrate 10 coated with the polyimide forming liquid is accommodated in the accommodating space 2 </ b> S inside the chamber 2.
In the decompression step, the atmosphere in the accommodation space 2S is decompressed.

  In the decompression step, the substrate 10 is disposed on the transport roller 8a. In the decompression step, the hot plate 5 is located closer to the bottom plate 22. In the decompression step, the hot plate 5 and the substrate 10 are separated to such an extent that the heat of the hot plate 5 is not transmitted to the substrate 10. In the decompression step, the power source of the hot plate 5 is turned on. For example, the temperature of the hot plate 5 is about 250 ° C. On the other hand, in the decompression step, the power source of the infrared heater 6 is turned off.

  In the depressurization step, the atmosphere of the accommodation space 2S of the substrate 10 is depressurized from atmospheric pressure to 500 Pa or less. For example, in the decompression step, the pressure in the chamber is gradually lowered from atmospheric pressure to 20 Pa.

  In the decompression step, the oxygen concentration in the internal atmosphere of the chamber 2 is made as low as possible. For example, in the decompression step, the degree of vacuum in the chamber 2 is set to 20 Pa or less. Thereby, the oxygen concentration in the chamber 2 can be made 100 ppm or less.

After the decompression step, in the substrate heating step, the substrate 10 is heated using the hot plate 5 disposed on one side of the substrate 10 and the infrared heater 6 disposed on the other side of the substrate 10.
The substrate heating process includes a first heating process and a second heating process.

After the decompression step, the substrate 10 is heated at the first temperature in the first heating step.
As shown in FIG. 6, in the first heating step, the hot plate 5 is moved upward to place the substrate 10 on the hot plate side reflecting surface 30 a of the infrared reflecting unit 30. Specifically, the substrate 10 is supported by a substrate support convex portion 35 (see FIG. 3) provided on the hot plate side reflection surface 30a. As a result, the hot plate-side reflecting surface 30 a is close to the second surface 10 b of the substrate 10, so that the heat of the hot plate 5 is transmitted to the substrate 10 via the infrared reflecting portion 30. For example, in the first heating step, the temperature of the hot plate 5 is maintained at 250 ° C. Therefore, the substrate temperature can be increased to 250 ° C. On the other hand, in the first heating step, the power source of the infrared heater 6 remains off.

  In the first heating step, the hot plate 5 is located in the passage 8h (see FIG. 1). For convenience, in FIG. 6, the hot plate 5 before movement (position during the decompression step) is indicated by a two-dot chain line, and the hot plate 5 after movement (position during the first heating step) is indicated by a solid line.

  In the first heating step, the substrate 10 is heated in a state where the atmosphere of the decompression step is maintained and the substrate temperature is in the range of 150 ° C. to 300 ° C. until the polyimide forming liquid applied to the substrate 10 is volatilized or imidized. . For example, in the first heating step, the time for heating the substrate 10 is set to 10 min or less. Specifically, in the first heating step, the time for heating the substrate 10 is set to 3 minutes. For example, in the first heating step, the substrate temperature is gradually increased from 25 ° C. to 250 ° C.

  After the first heating step, in the second heating step, the substrate 10 is heated at a second temperature higher than the first temperature. In the second heating step, the substrate 10 is heated using an infrared heater 6 provided independently of the hot plate 5 used in the first heating step.

  As shown in FIG. 7, in the second heating step, the hot plate 5 is moved further upward than the position in the first heating step, and the substrate 10 is brought close to the infrared heater 6. For example, in the second heating step, the temperature of the hot plate 5 is maintained at 250 ° C. In the second heating step, the infrared heater 6 is turned on. For example, the infrared heater 6 can heat the substrate 10 at 450 ° C. Therefore, the substrate temperature can be increased to 450 ° C. In the second heating step, since the substrate 10 is closer to the infrared heater 6 than in the first heating step, the heat of the infrared heater 6 is sufficiently transmitted to the substrate 10.

  In the second step, the hot plate 5 is positioned above the transport roller 8a (passing portion 8h shown in FIG. 1) and below the infrared heater 6. For convenience, in FIG. 7, the hot plate 5 before movement (position at the time of the first heating step) is indicated by a two-dot chain line, and the hot plate 5 after movement (position at the time of the second heating step) is indicated by a solid line.

  In the second heating step, the substrate 10 is heated until the substrate temperature becomes 600 ° C. or lower from the temperature in the first heating step while maintaining the atmosphere of the decompression step. For example, in the second heating step, the substrate temperature is rapidly increased from 250 ° C. to 450 ° C. Moreover, in a 2nd heating process, the pressure in a chamber is maintained at 20 Pa or less.

  In the second heating step, infrared rays traveling toward the hot plate 5 are reflected by using the hot plate side reflecting surface 30 a disposed between the hot plate 5 and the infrared heater 6. Thereby, it is possible to avoid infrared rays being absorbed by the hot plate 5. Note that at least a part of the infrared light reflected by the hot plate side reflecting surface 30 a is absorbed by the substrate 10.

  In addition, in the second heating step, infrared light is reflected on the chamber-side reflection surface 2 a provided on the inner surface of the chamber 2. Thereby, the temperature uniformity in the chamber 2 can be improved. Note that at least a part of the infrared light reflected by the chamber side reflection surface 2 a is absorbed by the substrate 10.

  In addition, the hot plate 5 is cooled in the second heating step. For example, in the second heating step, the refrigerant (air) is allowed to pass through the refrigerant passage portion 51 disposed inside the heating portion (see FIG. 3).

  The second heating step includes a cooling step for cooling the substrate 10. For example, in the cooling process, the substrate 10 is cooled in a state where the atmosphere of the decompression process or the low oxygen atmosphere is maintained until the substrate temperature reaches a temperature at which the substrate 10 can be transported from the temperature of the second heating process. In the cooling process, the power of the infrared heater 6 is turned off.

  Through the above steps, the polyimide forming solution applied to the substrate 10 is volatilized or imidized, and the molecular chains are rearranged during the imidization of the polyimide forming solution applied to the substrate 10, A polyimide film can be formed.

In the embodiment, the following chamber heating process is performed from the viewpoint of suppressing the gas in the accommodation space 2S of the chamber 2 from being cooled on the inner surface of the chamber 2 and becoming a sublimated product.
In the chamber heating step, at least a part of the inner surface of the chamber 2 is heated. In the embodiment, in the chamber heating step, the inner surface of the peripheral wall 23 of the chamber 2 is heated using the chamber heating unit 81 disposed on the peripheral wall 23 of the chamber 2 (see FIG. 2). For example, in the chamber heating step, heating is performed so that the temperature of the inner surface of the peripheral wall 23 of the chamber 2 is in the range of 40 ° C. or higher and 150 ° C. or lower. For example, the chamber heating process is always performed at least during the substrate heating process.

The substrate heating method of the embodiment further includes a vacuum pipe heating process, a gas supply pipe heating process, and a substrate carry-in / out part heating process.
In the vacuum pipe heating step, at least a part of the inner surface of the vacuum pipe 3 a connected to the chamber 2 is heated. In the embodiment, in the vacuum pipe heating step, the inner surface of the vacuum pipe 3a is heated using the vacuum pipe heating unit 82 that covers the outer surface of the vacuum pipe 3a (see FIG. 2). For example, the vacuum pipe heating process is always performed at least during the substrate heating process.

  In the gas supply pipe heating step, at least a part of the inner surface of the gas supply pipe 4a is heated. In the embodiment, in the gas supply pipe heating step, the inner surface of the gas supply pipe 4a is heated using the gas supply pipe heating unit 83 that covers the outer surface of the gas supply pipe 4a (see FIG. 2). For example, the gas supply pipe heating process is always performed at least during the substrate heating process.

  In the substrate carry-in / out part heating step, at least a part of the substrate carry-in / out part 24 can be heated. In the embodiment, in the substrate carry-in / out part heating step, the substrate carry-in / out part 24 is heated using the substrate carry-in / out part heating part 84 that covers the outer surface of the substrate carry-in / out part 24 (see FIG. 2). For example, the substrate carry-in / out part heating step is always performed at least during the substrate heating step.

  As described above, according to the present embodiment, by including the chamber heating unit 81 that can heat at least a part of the inner surface of the chamber 2, it is possible to suppress the temperature drop of the inner surface of the chamber 2. Therefore, it is possible to suppress the gas in the accommodation space 2S of the chamber 2 from being cooled on the inner surface of the chamber 2 and becoming a solid deposit (sublimation product). Therefore, it is possible to suppress the sublimate from adhering to the inner surface of the chamber 2.

  Further, the chamber 2 includes a peripheral wall 23 that covers the periphery of the substrate 10, and the chamber heating unit 81 is disposed on at least the peripheral wall 23, so that the temperature drop on the inner surface of the peripheral wall 23 of the chamber 2 can be suppressed. Therefore, it is possible to suppress the gas in the accommodation space 2 </ b> S of the chamber 2 from being cooled by the inner surface of the peripheral wall 23 of the chamber 2 and becoming a sublimation product. Therefore, it is possible to suppress the sublimate from adhering to the inner surface of the peripheral wall 23 of the chamber 2.

  The decompression unit 3 includes a vacuum pipe 3 a connected to the chamber 2, and further includes a vacuum pipe heating unit 82 capable of heating at least a part of the inner surface of the vacuum pipe 3 a, thereby lowering the temperature of the inner surface of the vacuum pipe 3 a. Can be suppressed. Therefore, it can suppress that the gas which passes the vacuum piping 3a is cooled by the inner surface of the vacuum piping 3a, and becomes a sublimate. Therefore, it can suppress that a sublimate adheres to the inner surface of the vacuum piping 3a.

  The substrate heating unit includes an infrared heater 6 that can heat the substrate 10 with infrared rays, and at least a part of the inner surface of the chamber 2 is a chamber-side reflection surface 2a that reflects infrared rays, thereby achieving the following effects. Play. Since at least a part of the infrared light reflected by the chamber side reflection surface 2a is absorbed by the substrate 10, heating of the substrate 10 can be promoted. On the other hand, the output of the infrared heater 6 can be reduced based on the temperature rise of the substrate 10 due to the infrared rays reflected by the chamber-side reflection surface 2a. By the way, in a system in which hot air is circulated in an oven to heat the substrate, there is a possibility that foreign matter is wound up in the accommodation space of the substrate by circulation of the hot air. On the other hand, according to this configuration, since the substrate 10 can be heated in a state where the atmosphere of the accommodation space 2S of the substrate 10 is decompressed, no foreign matter is wound up in the accommodation space 2S of the substrate 10. Therefore, it is suitable for suppressing foreign matter from adhering to the inner surface of the chamber 2 or the substrate 10.

Further, a gas supply unit 4 capable of adjusting the state of the storage space 2S by supplying an inert gas to the storage space 2S, and gas diffusion for diffusing the inert gas supplied from the gas supply unit 4 toward the substrate 10 By further including the portion 40, the following effects can be obtained.
By the way, when the inert gas is jetted toward the inner surface of the peripheral wall of the chamber, foreign substances are wound up in the accommodation space of the substrate by convection in the chamber after the inert gas collides with the inner surface of the peripheral wall of the chamber. There is a possibility that. On the other hand, according to this configuration, since the inert gas is diffused toward the substrate 10, it is possible to suppress the convection of the inert gas in the chamber 2, and foreign matter is wound up in the accommodation space 2 </ b> S of the substrate 10. You can avoid that. Therefore, it is suitable for suppressing foreign matter from adhering to the inner surface of the chamber 2 or the substrate 10.

  Further, the gas supply unit 4 includes a gas supply line 4a connected to the chamber 2, and further includes a gas supply line heating unit 83 capable of heating at least a part of the inner surface of the gas supply line 4a. The temperature fall of the inner surface of 4a can be suppressed. Therefore, it can suppress that the gas which passes along the gas supply piping 4a is cooled by the inner surface of the gas supply piping 4a, and becomes a sublimate. Therefore, it is possible to suppress the sublimate from adhering to the inner surface of the gas supply pipe 4a.

  The substrate loading / unloading section 24 further includes a substrate loading / unloading section 24 capable of loading and unloading the substrate 10 in the accommodation space 2S, and a substrate loading / unloading section heating section 84 capable of heating at least a part of the substrate loading / unloading section 24. The temperature drop of 24 can be suppressed. Therefore, it can suppress that the gas which passes along the board | substrate carrying in / out opening 23a is cooled by the board | substrate carrying in / out part 24, and becomes a sublimate. Therefore, it is possible to suppress the sublimate from adhering to the substrate carry-in / out section 24.

  Further, since the heat insulating member 26 that covers at least a part of the chamber heating unit 81 from the outside of the chamber 2 can be further provided, heat transfer to the outside of the chamber 2 can be suppressed. The inner surface can be efficiently heated.

  Further, since the chamber heating unit 81 and the heat insulating member 26 can be protected by further providing the cover member 27 that covers at least a part of the heat insulating member 26 from the outside of the chamber 2, the chamber heating unit 81 can protect the chamber 2. The inner surface can be stably and efficiently heated.

The decompression unit 3 includes a vacuum pipe 3a connected to the chamber 2, and liquefies the gas passing through the vacuum pipe 3a and collects the solvent volatilized from the solution applied to the substrate. 11 is further provided with the following effects. Since the gas passing through the vacuum pipe 3 a can be liquefied, the gas passing through the vacuum pipe 3 a can be prevented from flowing back into the chamber 2. In addition, since the solvent volatilized from the polyimide forming liquid applied to the substrate 10 can be recovered, the volatilized solvent from the polyimide forming liquid can be prevented from being discharged to the factory side. Further, when the gas liquefaction recovery unit 11 is connected to the line of the decompression unit 3 (vacuum pump 13), it is possible to prevent the solvent volatilized from the polyimide forming liquid from being liquefied again and flowing back into the vacuum pump 13. it can. Furthermore, the solvent volatilized from the polyimide forming liquid can be reused as the cleaning liquid. For example, the cleaning liquid can be used for cleaning the tip of the nozzle, cleaning the liquid adhering to the member that scrapes off the liquid adhering to the nozzle, and the like.
By the way, when the gas liquefaction collection part 11 is arrange | positioned upstream from the vacuum pump 13 in the line of the pressure reduction part 3, the liquid liquefied upstream may be vaporized at the time of the next pressure reduction, and evacuation time There is a possibility of delay. On the other hand, according to the present embodiment, the gas liquefaction recovery unit 11 is arranged on the downstream side of the vacuum pump 13 in the line of the decompression unit 3, so that the liquid liquefied on the downstream side is vaporized at the time of the next decompression. Therefore, it is possible to avoid delaying the evacuation time.

The substrate heating unit includes a hot plate 5 disposed on one side of the substrate 10 and an infrared heater 6 disposed on the other side of the substrate 10 and capable of heating the substrate 10 with infrared rays. The following effects are achieved.
By the way, in a system in which hot air is circulated in an oven to heat the substrate, there is a possibility that foreign matter is wound up in the accommodation space of the substrate by circulation of the hot air. On the other hand, according to this configuration, since the substrate 10 can be heated in a state where the atmosphere of the accommodation space 2S of the substrate 10 is decompressed, no foreign matter is wound up in the accommodation space 2S of the substrate 10. Therefore, it is suitable for suppressing foreign matter from adhering to the inner surface of the chamber 2 or the substrate 10. In addition, since the heating temperature of the substrate 10 can be made uniform in the plane of the substrate 10 by the hot plate 5 arranged on one side of the substrate 10, the film characteristics can be improved. For example, the in-plane uniformity of the heating temperature of the substrate 10 can be improved by heating the substrate in a state in which one surface of the hot plate 5 is in contact with the second surface 10b of the substrate 10.

  The chamber 2 is disposed on one side of the substrate 10, on the other side of the substrate 10, on the top plate 21 that faces the bottom plate 22, and on the outer periphery of the top plate 21 and the bottom plate 22. The hot plate 5 is disposed on the bottom plate 22 side, the infrared heater 6 is disposed on the top plate 21 side, and the chamber heating unit 81 is disposed on at least the peripheral wall 23. The following effects are achieved. The hot plate 5 can suppress the temperature drop on the inner surface of the bottom plate 22 of the chamber 2. In addition, the temperature of the inner surface of the top plate 21 of the chamber 2 can be suppressed by the infrared heater 6. In addition, the chamber heating unit 81 can suppress the temperature drop on the inner surface of the peripheral wall 23 of the chamber 2. That is, the temperature drop on the inner surface of the entire chamber 2 can be suppressed. Therefore, it can suppress that the gas in the accommodation space 2S of the chamber 2 is cooled on the inner surface of the whole chamber 2 and becomes a sublimation product. Therefore, it is possible to suppress the sublimate from adhering to the inner surface of the entire chamber 2. In addition, since the chamber heating unit 81 is disposed only on the peripheral wall 23 of the chamber 2, the entire chamber 2 is configured with a simple configuration as compared with the case where the chamber heating unit 81 is further disposed on the top plate 21 and the bottom plate 22. It can suppress that a sublimate adheres to the inner surface of. By the way, since the support member of the infrared heater is arranged on the top plate of the chamber, there is a restriction on the layout when the chamber heating unit is arranged on the top plate of the chamber. On the other hand, according to this configuration, since the chamber heating unit 81 is disposed only on the peripheral wall 23 of the chamber 2, there is no restriction on the layout.

Further, a gas supply unit 4 capable of adjusting the state of the storage space 2S by supplying an inert gas to the storage space 2S, and gas diffusion for diffusing the inert gas supplied from the gas supply unit 4 toward the substrate 10 Further, the gas supply unit 4 includes the gas supply pipe 4a connected to the top plate 21 side of the peripheral wall 23, thereby providing the following effects.
By the way, when the inert gas is jetted toward the inner surface of the peripheral wall of the chamber, foreign substances are wound up in the accommodation space of the substrate by convection in the chamber after the inert gas collides with the inner surface of the peripheral wall of the chamber. There is a possibility that. On the other hand, according to this configuration, since the inert gas is diffused toward the substrate 10, it is possible to suppress the convection of the inert gas in the chamber 2, and foreign matter is wound up in the accommodation space 2 </ b> S of the substrate 10. You can avoid that. Therefore, it is suitable for suppressing foreign matter from adhering to the inner surface of the chamber 2 or the substrate 10. By the way, since the support member of the infrared heater is arranged on the top plate of the chamber, there is a restriction on layout when the gas supply pipe is connected to the top plate of the chamber. On the other hand, according to this configuration, since the gas supply pipe 4a is connected to the peripheral wall 23 of the chamber 2, there is no restriction on the layout. In addition, since the gas supply pipe 4a is connected to the top plate 21 side of the peripheral wall 23 of the chamber 2, the inert gas is more easily diffused from the top plate 21 side toward the substrate 10, It is possible to more effectively suppress the convection of the inert gas in the chamber 2, and to more effectively avoid the foreign matter from being wound up in the accommodation space 2 </ b> S of the substrate 10.

Further, the infrared ray reflection unit 30 is disposed between the hot plate 5 and the infrared heater 6 and has a hot plate side reflection surface 30a for reflecting infrared rays toward the hot plate 5, and the hot plate 5 has infrared reflection. By including the placement surface 5a on which the portion 30 can be placed, the following effects are produced. According to this configuration, the hot plate 5 is disposed between the hot plate 5 and the infrared heater 6 and includes the hot plate side reflection surface 30 a that reflects infrared rays toward the hot plate 5. Since this can be avoided, the temperature rise of the hot plate 5 by infrared rays can be suppressed. Therefore, it is not necessary to consider the temperature lowering time of the hot plate 5 accompanying the temperature increase of the hot plate 5 by infrared rays. Therefore, the tact time required for cooling the hot plate 5 can be shortened. In addition, since at least a part of infrared rays reflected by the hot plate side reflecting surface 30a is absorbed by the substrate 10, heating of the substrate 10 can be promoted. On the other hand, the output of the infrared heater 6 can be reduced based on the temperature rise of the substrate 10 due to the infrared rays reflected by the hot plate side reflecting surface 30a. In addition, the hot plate 5 includes the mounting surface 5a on which the infrared reflecting unit 30 can be mounted, so that the mounting surface on the hot plate 5 is reduced when the atmosphere of the accommodation space of the substrate 10 is reduced in vacuum. Vacuum insulation can be provided between 5a and the infrared reflecting portion 30. That is, the gap at the interface between the mounting surface 5a and the infrared reflecting portion 30 can function as a heat insulating layer. Therefore, the temperature rise of the hot plate 5 by infrared rays can be suppressed. On the other hand, when nitrogen is supplied to the accommodation space of the substrate 10 (N ₂ purge), the vacuum heat insulation between the placement surface 5a and the infrared reflecting portion 30 can be released. Therefore, when the hot plate 5 is cooled, it can be estimated that the infrared reflecting unit 30 is also cooled.

  In addition, the polyimide forming liquid is applied only to the first surface 10 a of the substrate 10, and the hot plate 5 is disposed on the second surface 10 b side opposite to the first surface 10 a of the substrate 10. The following effects are achieved. Since the heat generated from the hot plate 5 is transmitted from the second surface 10b side of the substrate 10 toward the first surface 10a side, the substrate 10 can be effectively heated. In addition, while the substrate 10 is heated by the hot plate 5, the polyimide forming liquid applied to the substrate 10 can be volatilized or imidized (for example, degassing during film formation) can be performed efficiently.

  In addition, both the hot plate 5 and the infrared heater 6 can heat the substrate 10 in stages, thereby producing the following effects. Compared with the case where the hot plate 5 and the infrared heater 6 can heat the substrate 10 only at a certain temperature, the substrate 10 is efficiently used so as to meet the film forming conditions of the polyimide forming liquid applied to the substrate 10. Can be heated. Therefore, the polyimide forming liquid applied to the substrate 10 can be dried stepwise and cured well.

  Further, by further including a position adjustment unit 7 that can adjust the relative positions of the hot plate 5 and the infrared heater 6 and the substrate 10, the heating temperature of the substrate 10 can be reduced as compared with the case where the position adjustment unit 7 is not provided. Easy to adjust. For example, when the heating temperature of the substrate 10 is increased, the hot plate 5 and the infrared heater 6 and the substrate 10 are brought close to each other, and when the heating temperature of the substrate 10 is decreased, the hot plate 5, the infrared heater 6 and the substrate 10 are Can be separated. Therefore, it becomes easy to heat the substrate 10 step by step.

  In addition, the position adjusting unit 7 includes the moving unit 7 a that allows the substrate 10 to move between the hot plate 5 and the infrared heater 6, thereby providing the following effects. By moving the substrate 10 between the hot plate 5 and the infrared heater 6, the heating temperature of the substrate 10 can be adjusted in a state where at least one of the hot plate 5 and the infrared heater 6 is disposed at a fixed position. Therefore, it is not necessary to separately provide a device that can move at least one of the hot plate 5 and the infrared heater 6, and the heating temperature of the substrate 10 can be adjusted with a simple configuration.

  Further, between the hot plate 5 and the infrared heater 6, a transport unit 8 that can transport the substrate 10 is provided, and the transport unit 8 is formed with a passage unit 8 h that can pass through the moving unit 7 a. As a result, the following effects are obtained. When the substrate 10 is moved between the hot plate 5 and the infrared heater 6, it is possible to pass the passage portion 8 h, so that it is not necessary to move the substrate 10 around the transfer portion 8. Therefore, it is not necessary to separately provide a device for moving the substrate 10 while bypassing the transfer unit 8, and thus the substrate 10 can be moved smoothly with a simple configuration.

  Further, by further including a temperature detection unit 9 that can detect the temperature of the substrate 10, the temperature of the substrate 10 can be grasped in real time. For example, it is possible to suppress the temperature of the substrate 10 from deviating from the target value by heating the substrate 10 based on the detection result of the temperature detection unit 9.

  In addition, since the substrate 10 and the substrate heating units 5 and 6 are accommodated in the common chamber 2, the heat treatment by the substrate heating units 5 and 6 on the substrate 10 can be performed in the common chamber 2. For example, the heat treatment by the hot plate 5 and the heat treatment by the infrared heater 6 can be performed on the substrate 10 in the common chamber 2 at a time. In other words, unlike the case where the hot plate 5 and the infrared heater 6 are housed in different chambers 2, it does not take time to transport the substrate 10 between the two different chambers 2. Therefore, the heat treatment of the substrate 10 can be performed more efficiently. Further, the entire apparatus can be downsized as compared with the case where two different chambers 2 are provided.

  Further, by including the chamber 2 that can accommodate the substrate 10, the hot plate 5, and the infrared heater 6, the heating temperature of the substrate 10 can be managed in the chamber 2, so that the substrate 10 can be effectively heated. it can. In addition, since the temperature of the hot plate 5 can be managed in the chamber 2, the temperature of the hot plate 5 can be effectively lowered.

  Further, since the infrared heater 6 is disposed on the first surface 10a side of the substrate 10, heat generated from the infrared heater 6 is transferred from the first surface 10a side of the substrate 10 to the second surface 10b side. Therefore, the heating by the hot plate 5 and the heating by the infrared heater 6 are combined to heat the substrate 10 more effectively.

  Further, the substrate 10 can be heated to the second temperature in a short time by the infrared heating of the infrared heater 6. Further, since the substrate 10 can be heated (so-called non-contact heating) in a state where the infrared heater 6 and the substrate 10 are separated from each other, the substrate 10 can be kept clean (so-called clean heating is performed).

  Further, since the peak wavelength range of the infrared heater is in the range of 1.0 μm or more and 4 μm or less, the wavelength in the range of 1.0 μm or more and 4 μm or less coincides with the absorption wavelength of glass, water, etc. In addition, the polyimide forming liquid applied to the substrate 10 can be more effectively heated.

  Moreover, the temperature fall of the inner surface of the chamber 2 can be suppressed by heating at least a part of the inner surface of the chamber 2 in the chamber heating step. Therefore, it can suppress that the gas in the accommodation space 2S of the chamber 2 is cooled by the inner surface of the chamber 2 and becomes a sublimation product. Therefore, it is possible to suppress the sublimate from adhering to the inner surface of the chamber 2.

  Moreover, the temperature fall of the inner surface of the vacuum pipe 3a can be suppressed by further including a vacuum pipe heating step of heating at least a part of the inner surface of the vacuum pipe 3a connected to the chamber 2. Therefore, it can suppress that the gas which passes the vacuum piping 3a is cooled by the inner surface of the vacuum piping 3a, and becomes a sublimate. Therefore, it can suppress that a sublimate adheres to the inner surface of the vacuum piping 3a.

  Also, infrared rays are absorbed by the hot plate 5 by reflecting infrared rays toward the hot plate 5 using the hot plate side reflecting surface 30a disposed between the hot plate 5 and the infrared heater 6 in the second heating step. Therefore, it is possible to prevent the hot plate 5 from being heated by infrared rays. Therefore, it is not necessary to consider the temperature lowering time of the hot plate 5 accompanying the temperature increase of the hot plate 5 by infrared rays. Therefore, the tact time required for cooling the hot plate 5 can be shortened. In addition, since at least a part of infrared rays reflected by the hot plate side reflecting surface 30a is absorbed by the substrate 10, heating of the substrate 10 can be promoted. On the other hand, the output of the infrared heater 6 can be reduced based on the temperature rise of the substrate 10 due to the infrared rays reflected by the hot plate side reflecting surface 30a.

  In addition, by cooling the hot plate 5 in the second heating step, the temperature of the hot plate 5 can be lowered in a shorter time than when the hot plate 5 is cooled after the second heating step. Therefore, the tact time required for cooling the hot plate 5 can be further shortened.

(Second embodiment)
Next, a second embodiment of the present invention will be described with reference to FIGS.
In 2nd embodiment, the structure of the position adjustment part 207 differs especially with respect to 1st embodiment. 9 to 11, the same reference numerals are given to the same components as those in the first embodiment, and detailed description thereof is omitted.
FIG. 8 is a view corresponding to FIG. 2 including cross sections of the heating unit 80, the heat insulating member 26, and the cover member 27 in the substrate heating apparatus 201 according to the second embodiment.

<Position adjustment unit>
As illustrated in FIG. 8, the position adjustment unit 207 includes a storage unit 270, a moving unit 275, and a driving unit 279.
The accommodating portion 270 is disposed on the lower side of the chamber 2. The accommodating part 270 can accommodate the moving part 275 and the driving part 279. The accommodating part 270 is formed in a rectangular parallelepiped box shape. Specifically, the accommodating portion 270 includes a rectangular plate-shaped first support plate 271, a rectangular plate-shaped second support plate 272 facing the first support plate 271, the first support plate 271, and the second support plate 272. And a surrounding plate 273 that covers the moving portion 275 and the drive portion 279 so as to surround the periphery. Note that the surrounding plate 273 may not be provided. That is, the position adjusting unit 207 only needs to include at least the first support plate 271, the moving unit 275, and the driving unit 279. For example, an exterior cover that covers the entire apparatus may be provided.

  The outer peripheral edge of the first support plate 271 is connected to the lower end of the peripheral wall 23 of the chamber 2. The first support plate 271 also functions as a bottom plate of the chamber 2. A hot plate 205 is disposed on the first support plate 271. Specifically, the hot plate 205 is supported by the first support plate 271 in the chamber 2.

  The enclosure plate 273 and the peripheral wall 23 are continuously connected vertically. The chamber 2 is configured to be able to accommodate the substrate 10 in a sealed space. For example, the airtightness in the chamber 2 can be improved by connecting the connection portions of the top plate 21, the first support plate 271 as the bottom plate, and the peripheral wall 23 without welding.

The moving unit 275 includes a pin 276, a telescopic tube 277 and a base 278.
The pin 276 can support the second surface 10b of the substrate 10 and can move in the normal direction (Z direction) of the second surface 10b. The pin 276 is a bar-like member that extends vertically. The tip (upper end) of the pin 276 can be brought into contact with the second surface 10 b of the substrate 10 and can be separated from the second surface 10 b of the substrate 10.

  A plurality of pins 276 are provided at intervals in the direction parallel to the second surface 10b (X direction and Y direction). The plurality of pins 276 are formed to have substantially the same length. The tips of the plurality of pins 276 are disposed in a plane parallel to the second surface 10b (in the XY plane).

  The telescopic tube 277 is provided between the first support plate 271 and the base 278. The telescopic tube 277 is a tubular member that covers the periphery of the pin 276 and extends vertically. The telescopic tube 277 is vertically extendable between the first support plate 271 and the base 278. For example, the telescopic tube 277 is a vacuum bellows.

  The same number of telescopic tubes 277 as the plurality of pins 276 are provided. The tips (upper ends) of the plurality of telescopic tubes 277 are fixed to the first support plate 271. Specifically, the first support plate 271 is formed with a plurality of insertion holes 271h that open the first support plate 271 in the thickness direction. The inner diameter of each insertion hole 271 h is substantially the same as the outer diameter of each expansion tube 277. For example, the distal end of each telescopic tube 277 is fitted and fixed in each insertion hole 271 h of the first support plate 271.

  The base 278 is a plate-like member that faces the first support plate 271. The upper surface of the base 278 forms a flat surface along the second surface 10 b of the substrate 10. On the upper surface of the base 278, the base ends (lower ends) of the plurality of pins 276 and the base ends (lower ends) of the plurality of telescopic tubes 277 are fixed.

  The tips of the plurality of pins 276 can be inserted through the hot plate 205. The hot plate 205 is placed on the hot plate 205 at a position that overlaps each insertion hole 271h of the first support plate 271 (inner space of each telescopic tube 277) in the normal direction of the second surface 10b. A plurality of insertion holes 205h that open in the direction (thickness direction of the hot plate 205) are formed.

  The tips of the plurality of pins 276 can be inserted through the infrared reflecting portion 230. In the infrared reflecting portion 230, the infrared reflecting portion 230 is placed on the second surface 10b at a position overlapping each insertion hole 271h (inner space of each telescopic tube 277) of the first support plate 271 in the normal direction of the second surface 10b. A plurality of insertion holes 230h that open in the normal direction (thickness direction of the infrared reflecting plate) are formed.

  The tips of the plurality of pins 276 can be brought into contact with the second surface 10b of the substrate 10 through the internal spaces of the respective telescopic tubes 277, the respective insertion holes 205h of the hot plate 205, and the respective insertion holes 230h of the infrared reflecting section 230. Has been. Therefore, the substrate 10 is supported in parallel with the XY plane by the tips of the plurality of pins 276. The plurality of pins 276 move in the Z direction in the chamber 2 while supporting the substrate 10 accommodated in the chamber 2 (see FIGS. 9 to 11).

  The drive unit 279 is disposed in the accommodating unit 270 that is outside the chamber 2. Therefore, even if particles are generated as the drive unit 279 is driven, it is possible to avoid intrusion of particles into the chamber 2 by making the chamber 2 a sealed space.

<Substrate heating method>
Next, the substrate heating method according to this embodiment will be described. In the present embodiment, the substrate 10 is heated using the substrate heating apparatus 201 described above. Operations performed in the respective units of the substrate heating apparatus 201 are controlled by the control unit 15. In addition, about the process similar to 1st embodiment, the detailed description is abbreviate | omitted.

  FIG. 9 is a diagram for explaining an example of the operation of the substrate heating apparatus 201 according to the second embodiment. FIG. 10 is an operation explanatory diagram of the substrate heating apparatus 201 according to the second embodiment, following FIG. FIG. 11 is an operation explanatory diagram of the substrate heating apparatus 201 according to the second embodiment, following FIG.

  For convenience, in FIG. 9 to FIG. 11, among the components of the substrate heating device 201, the substrate carry-in / out unit 24, the decompression unit 3, the gas supply unit 4, the gas diffusion unit 40, the temperature detection unit 9, the gas liquefaction recovery unit 11, Illustration of the cooling mechanism 50, the heating unit 80, the heat insulating member 26, the cover member 27, and the control unit 15 is omitted.

The substrate heating method according to the present embodiment includes a housing process, a decompression process, a substrate heating process, and a chamber heating process.
As shown in FIG. 9, in the housing step, the substrate 10 coated with the polyimide forming liquid is housed in the housing space 2 </ b> S inside the chamber 2.
In the decompression step, the atmosphere in the accommodation space 2S is decompressed.

  In the decompression step, the substrate 10 is separated from the hot plate 205. Specifically, the tips of the plurality of pins 276 are brought into contact with the second surface 10 b of the substrate 10 through the internal spaces of the respective expansion tubes 277, the respective insertion holes 205 h of the hot plate 205, and the respective insertion holes 230 h of the infrared reflection unit 230. At the same time, the substrate 10 is lifted to separate the substrate 10 from the hot plate 205. In the decompression step, the hot plate 205 and the substrate 10 are separated to such an extent that the heat of the hot plate 205 is not transmitted to the substrate 10. In the decompression process, the hot plate 205 is powered on. For example, the temperature of the hot plate 205 is about 250 ° C. On the other hand, in the decompression step, the power source of the infrared heater 6 is turned off.

After the decompression step, in the substrate heating step, the substrate 10 is heated using the hot plate 205 disposed on one side of the substrate 10 and the infrared heater 6 disposed on the other side of the substrate 10.
The substrate heating process includes a first heating process and a second heating process.

After the decompression step, the substrate 10 is heated at the first temperature in the first heating step.
As shown in FIG. 10, in the first heating step, the substrate 10 is placed on the hot plate side reflecting surface 230 a of the infrared reflecting unit 230 by separating the tips of the plurality of pins 276 from the second surface 10 b of the substrate 10. Let Specifically, the substrate 10 is supported on a substrate support convex portion (not shown) provided on the hot plate side reflection surface 230a. As a result, the hot plate side reflecting surface 230 a is close to the second surface 10 b of the substrate 10, so that the heat of the hot plate 205 is transmitted to the substrate 10 via the infrared reflecting portion 230. For example, in the first heating step, the temperature of the hot plate 205 is maintained at 250 ° C. Therefore, the substrate temperature can be increased to 250 ° C. On the other hand, in the first heating step, the power source of the infrared heater 6 remains off.

After the first heating step, in the second heating step, the substrate 10 is heated at a second temperature higher than the first temperature.
As shown in FIG. 11, in the second heating step, the substrate 10 is brought closer to the infrared heater 6 by raising the substrate 10 further than the position in the first heating step. For example, in the second heating step, the temperature of the hot plate 205 is maintained at 250 ° C. In the second heating step, the infrared heater 6 is turned on. For example, the infrared heater 6 can heat the substrate 10 at 450 ° C. Therefore, the substrate temperature can be increased to 450 ° C. In the second heating step, since the substrate 10 is closer to the infrared heater 6 than in the first heating step, the heat of the infrared heater 6 is sufficiently transmitted to the substrate 10.

Thereafter, the polyimide forming liquid applied to the substrate 10 is volatilized or imidized by passing through the same steps as in the first embodiment, and the molecules at the time of imidization of the polyimide forming liquid applied to the substrate 10 are performed. Chain rearrangement can be performed to form a polyimide film.
Further, from the viewpoint of suppressing the gas in the accommodation space 2S of the chamber 2 from being cooled on the inner surface of the chamber 2 to become a sublimated product, the same chamber heating process as in the first embodiment is performed.

  As described above, according to the present embodiment, the moving unit 275 includes the plurality of pins 276 that can support the second surface 10b of the substrate 10 and move in the normal direction of the second surface 10b. The following effects are achieved by disposing the front end of the second end in a plane parallel to the second surface 10b. Since the substrate 10 can be heated while the substrate 10 is stably supported, the polyimide forming liquid applied to the substrate 10 can be stably formed.

  The hot plate 205 is formed with a plurality of insertion holes 205h that open the hot plate 205 in the normal direction of the second surface 10b, and the tips of the pins 276 pass through the insertion holes 205h to the second surface. By being able to contact 10b, the following effects are produced. Since the transfer of the substrate 10 between the plurality of pins 276 and the hot plate 205 can be performed in a short time, the heating temperature of the substrate 10 can be adjusted efficiently.

The shapes and combinations of the constituent members shown in the above-described examples are merely examples, and various changes can be made based on design requirements and the like.
For example, in the above embodiment, the substrate heating unit includes a hot plate disposed on one side of the substrate and an infrared heater disposed on the other side of the substrate and capable of heating the substrate with infrared rays. However, it is not limited to this. For example, the substrate heating unit may include only a hot plate disposed on one side of the substrate, or may include only an infrared heater disposed on the other side of the substrate. In other words, the substrate heating unit may be disposed on at least one of the one side and the other side of the substrate.

  Moreover, in the said embodiment, although the chamber heating part is arrange | positioned only at the surrounding wall of a chamber, it is not restricted to this. For example, the chamber heating unit may be disposed on the top plate and the bottom plate of the chamber in addition to the peripheral wall of the chamber. That is, the chamber heating unit only needs to be able to heat at least a part of the inner surface of the chamber.

  Moreover, although the infrared reflective part which has a reflective surface is provided in the said embodiment, it is not restricted to this. For example, the upper surface of the hot plate may be a reflecting surface that reflects infrared light without providing the infrared reflecting portion.

  Moreover, in the said embodiment, although a board | substrate, a hotplate, and an infrared heater are accommodated in the common chamber, it is not restricted to this. For example, the hot plate and the infrared heater may be housed in different chambers.

  Moreover, in the said embodiment, although both a hotplate and an infrared heater can heat a board | substrate in steps, it is not restricted to this. For example, at least one of a hot plate and an infrared heater may be capable of heating the substrate in stages. Further, both the hot plate and the infrared heater may be capable of heating the substrate only at a certain temperature.

  Moreover, in the said embodiment, although the some conveyance roller was used as a conveyance part, it is not restricted to this. For example, a belt conveyor may be used as the conveyance unit, or a linear motor actuator may be used. For example, the belt conveyor and the linear motor actuator may be able to be added in the X direction. Thereby, the conveyance distance of the board | substrate in a X direction can be adjusted.

  In addition, when a configuration other than the configuration shown in FIG. 4 (a configuration in which a passing portion is formed in the transport unit) is adopted as the transport unit, the planar size of the hot plate is equal to or larger than the planar size of the substrate. There may be. Thereby, compared with the case where the planar view size of a hot plate is smaller than the planar view size of a board | substrate, the in-plane uniformity of the heating temperature of a board | substrate can be improved further.

  Moreover, in the said embodiment, in the pressure reduction process and the 1st heating process, although the power supply of the hot plate is turned on and the power supply of the infrared heater is turned off, it is not restricted to this. For example, in the decompression step and the first heating step, the hot plate and the infrared heater may be turned on.

  Moreover, in said 2nd embodiment, although the front-end | tip of several pins can be penetrated by an infrared reflective part (namely, several penetration holes are formed in the infrared reflective part), it is not restricted to this. . For example, the tips of the plurality of pins may not be able to pass through the infrared reflecting portion. That is, the insertion hole may not be formed in the infrared reflecting portion. In this case, the tips of the plurality of pins can be brought into contact with the back surface of the infrared reflecting portion via the internal space of each expansion tube and each insertion hole of the hot plate. Therefore, the infrared reflecting part is supported in parallel with the XY plane by the tips of the plurality of pins. The plurality of pins move in the Z direction in the chamber while supporting the substrate accommodated in the chamber via the infrared reflecting portion.

In addition, the present invention may be applied to a substrate processing system including the substrate heating apparatus of the above embodiment. For example, a substrate processing system is a system that is used by being incorporated in a production line such as a factory, and forms a thin film in a predetermined region of the substrate. Although not shown, for example, the substrate processing system is a unit in which a substrate processing unit including the substrate heating device and a loading cassette containing a substrate before processing are supplied and an empty loading cassette is collected. For carrying in between a substrate carry-in unit, a substrate carry-out unit which is a unit to which a carry-out cassette containing processed substrates is collected and an empty carry-out cassette is supplied, and between the substrate processing unit and the substrate carry-in unit A transport unit that transports the cassette and transports the unloading cassette between the substrate processing unit and the substrate unloading unit, and a control unit that performs overall control of each unit are provided.
According to this configuration, by including the substrate heating device, it is possible to prevent the sublimate from adhering to the inner surface of the chamber in the substrate processing system.

  In addition, each component described as embodiment or its modification in the above can be combined suitably, in the range which does not deviate from the meaning of this invention, and some components are combined among several combined components. It is also possible not to use as appropriate.

  DESCRIPTION OF SYMBOLS 1,201 ... Substrate heating apparatus 2 ... Chamber 2a ... Chamber side reflective surface 2S ... Accommodating space 3 ... Decompression part 3a ... Vacuum pipe 4 ... Gas supply part 4a ... Gas supply pipe 5,205 ... Hot plate (substrate heating part) 5a ... Placement surface 6 ... Infrared heater (substrate heating unit) 7,207 ... Position adjustment unit 7a, 275 ... Moving unit 8 ... Transporting unit 8h ... Passing unit 9 ... Temperature detection unit 10 ... Substrate 10a ... First surface 10b ... First Two surfaces 11 ... Gas liquefaction recovery part 21 ... Top plate 22 ... Bottom plate 23 ... Peripheral wall 24 ... Substrate carry-in / out part 26 ... Heat insulation member 27 ... Cover member 30, 230 ... Infrared reflecting part 30a, 230a ... Hot plate side reflecting surface 40 ... Gas Diffusion section 81 ... Chamber heating section 82 ... Vacuum pipe heating section 83 ... Gas supply pipe heating section 84 ... Substrate carry-in / out section heating section 205h ... Insertion hole 276 ... Pi

Claims (26)

A chamber in which an accommodation space capable of accommodating a substrate coated with a solution is formed;
A decompression unit capable of decompressing the atmosphere of the housing space;
A substrate heating unit disposed on at least one of the one side and the other side of the substrate and capable of heating the substrate;
A chamber heating unit capable of heating at least a part of the inner surface of the chamber. The chamber includes a peripheral wall covering the periphery of the substrate;
The substrate heating apparatus according to claim 1, wherein the chamber heating unit is disposed at least on the peripheral wall. The decompression unit includes a vacuum pipe connected to the chamber,
The substrate heating apparatus according to claim 1, further comprising a vacuum pipe heating unit capable of heating at least a part of an inner surface of the vacuum pipe. The substrate heating unit includes an infrared heater capable of heating the substrate with infrared rays,
The substrate heating apparatus according to any one of claims 1 to 3, wherein at least a part of the inner surface of the chamber is a chamber-side reflecting surface that reflects the infrared light. A gas supply unit capable of adjusting the state of the storage space by supplying an inert gas to the storage space;
The substrate heating apparatus according to any one of claims 1 to 4, further comprising a gas diffusion unit that diffuses the inert gas supplied from the gas supply unit toward the substrate. The gas supply unit includes a gas supply pipe connected to the chamber,
The substrate heating apparatus according to claim 5, further comprising a gas supply pipe heating unit capable of heating at least a part of the inner surface of the gas supply pipe. A substrate loading / unloading unit capable of loading and unloading the substrate into and from the housing space;
The substrate heating apparatus according to claim 1, further comprising: a substrate carry-in / out part heating unit capable of heating at least a part of the substrate carry-in / out part. The substrate heating apparatus according to claim 1, further comprising a heat insulating member that covers at least a part of the chamber heating unit from the outside of the chamber. The substrate heating apparatus according to claim 8, further comprising a cover member that covers at least a part of the heat insulating member from the outside of the chamber. The decompression unit includes a vacuum pipe connected to the chamber,
The substrate heating apparatus according to any one of claims 1 to 9, further comprising a gas liquefaction recovery unit that can liquefy a gas passing through the vacuum pipe and recover a solvent volatilized from the solution applied to the substrate. . The substrate heating unit is
A hot plate disposed on one side of the substrate;
The substrate heating apparatus according to any one of claims 1 to 10, further comprising: an infrared heater disposed on the other side of the substrate and capable of heating the substrate with infrared rays. The chamber is
A bottom plate disposed on one side of the substrate;
A top plate disposed on the other side of the substrate and facing the bottom plate;
A peripheral wall connected to the outer peripheral edge of the top plate and the bottom plate,
The hot plate is disposed on the bottom plate side,
The infrared heater is disposed on the top plate side,
The substrate heating apparatus according to claim 11, wherein the chamber heating unit is disposed at least on the peripheral wall. A gas supply unit capable of adjusting the state of the storage space by supplying an inert gas to the storage space;
A gas diffusion part for diffusing the inert gas supplied from the gas supply part toward the substrate;
The substrate heating apparatus according to claim 12, wherein the gas supply unit includes a gas supply pipe connected to the top plate side of the peripheral wall. An infrared reflection part disposed between the hot plate and the infrared heater and having a hot plate side reflection surface for reflecting the infrared ray toward the hot plate;
The substrate heating apparatus according to any one of claims 11 to 13, wherein the hot plate includes a placement surface on which the infrared reflection unit can be placed. The solution is applied only to the first surface of the substrate,
The substrate heating apparatus according to claim 11, wherein the hot plate is disposed on a second surface side opposite to the first surface of the substrate. The substrate heating apparatus according to claim 11, wherein at least one of the hot plate and the infrared heater can heat the substrate in a stepwise manner. The substrate heating apparatus according to any one of claims 11 to 16, further comprising a position adjusting unit capable of adjusting a relative position between at least one of the hot plate and the infrared heater and the substrate. The substrate heating apparatus according to claim 17, wherein the position adjusting unit further includes a moving unit that allows the substrate to move between the hot plate and the infrared heater. Between the hot plate and the infrared heater, a transport unit that can transport the substrate is provided,
The substrate heating apparatus according to claim 18, wherein the transport unit is formed with a passing part that allows the moving part to pass therethrough. The moving part includes a plurality of pins capable of supporting a second surface opposite to the first surface of the substrate and moving in a normal direction of the second surface;
The substrate heating apparatus according to claim 18, wherein tips of the plurality of pins are disposed in a plane parallel to the second surface. The hot plate has a plurality of insertion holes that open the hot plate in the normal direction of the second surface,
The substrate heating apparatus according to claim 20, wherein tips of the plurality of pins can be brought into contact with the second surface through the plurality of insertion holes. The substrate heating apparatus according to any one of claims 1 to 21, further comprising a temperature detection unit capable of detecting the temperature of the substrate. The substrate heating apparatus according to any one of claims 1 to 22, wherein the substrate and the substrate heating unit are accommodated in a common chamber.   A substrate processing system including the substrate heating apparatus according to any one of claims 1 to 23. An accommodating step of accommodating the substrate coated with the solution in an accommodating space inside the chamber;
A depressurization step of depressurizing the atmosphere of the housing space;
A substrate heating step of heating the substrate using a substrate heating unit disposed on at least one of the one side and the other side of the substrate;
And a chamber heating step of heating at least a part of the inner surface of the chamber. The substrate heating method according to claim 25, further comprising a vacuum pipe heating step of heating at least a part of an inner surface of the vacuum pipe connected to the chamber.

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