TW202132738A - Substrate heating device and substrate treating system which can suppress the adhesion of the sublimate to a top surface of a chamber and a substrate heating part - Google Patents
Substrate heating device and substrate treating system which can suppress the adhesion of the sublimate to a top surface of a chamber and a substrate heating part Download PDFInfo
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Abstract
Description
本發明涉及基板加熱裝置以及基板處理系統。The present invention relates to a substrate heating device and a substrate processing system.
以往,存在具備對塗布於片材的上表面的塗膜照射紅外線的紅外線加熱器的裝置(例如參閱專利文獻1)。例如,紅外線加熱器懸掛於設置在房屋內的空間的框架。 [先前技術文獻] [專利文獻]Conventionally, there is an apparatus equipped with an infrared heater that irradiates infrared rays to the coating film applied on the upper surface of the sheet (for example, refer to Patent Document 1). For example, an infrared heater is hung on a frame installed in a space in a house. [Prior Technical Literature] [Patent Literature]
[專利文獻1]國際公開第2017/169784號專利公報[Patent Document 1] International Publication No. 2017/169784 Patent Gazette
[發明欲解決之課題][The problem to be solved by the invention]
然而,在加熱時的昇華物附著在房屋的頂面或紅外線加熱器的情況下,昇華物很有可能下落至塗膜。However, in the case where the sublimation during heating adheres to the ceiling of the house or the infrared heater, the sublimation is likely to fall to the coating film.
鑒於以上那樣的情況,本發明的目的在於提供一種可抑制昇華物向腔室的頂面以及基板加熱部附著的基板加熱裝置以及基板處理系統。 [解決課題之手段]In view of the above-mentioned circumstances, an object of the present invention is to provide a substrate heating device and a substrate processing system that can suppress the adhesion of sublimates to the ceiling surface of the chamber and the substrate heating section. [Means to solve the problem]
本發明的其中一樣態所涉及的基板加熱裝置包括:腔室,其係在內部形成有可收容基板的收容空間;基板加熱部,其係配置於前述基板的一面側,並且可利用紅外線對前述基板進行加熱;以及多個遮蔽板,其係設置在前述基板與前述基板加熱部之間,使前述紅外線透過並且遮擋基板加熱時的昇華物。 根據該構成,透過在基板與基板加熱部之間設置遮蔽板,能夠用遮蔽板遮擋從基板朝向腔室的頂面以及基板加熱部的昇華物。因此,能夠抑制昇華物向腔室的頂面以及基板加熱部附著。 此外,通過抑制昇華物向腔室的頂面附著,能夠省去為了清掃腔室的頂面而卸下基板加熱部等的工夫。 進而,透過設置多個遮蔽板,與設置單一的遮蔽板(例如G6尺寸的大型遮蔽板)的情況相比,容易更換遮蔽板,因此維護性優異。 此外,透過抑制昇華物向腔室的頂面以及基板加熱部附著,能夠抑制昇華物直接下落至基板。即便在假設昇華物附著在腔室的頂面或基板加熱部的情況下,通過在基板與基板加熱部之間設置多個遮蔽板,也能夠抑制昇華物直接下落至基板。The substrate heating device according to one aspect of the present invention includes: a chamber in which a receiving space capable of accommodating a substrate is formed; and a substrate heating part, which is arranged on one side of the substrate, and can use infrared rays to The substrate is heated; and a plurality of shielding plates are provided between the substrate and the substrate heating portion to allow the infrared rays to pass through and block the sublimation when the substrate is heated. According to this configuration, by providing the shielding plate between the substrate and the substrate heating section, the shielding plate can shield the sublimation from the substrate toward the ceiling surface of the chamber and the substrate heating section. Therefore, it is possible to suppress adhesion of the sublimate to the ceiling surface of the chamber and the substrate heating portion. In addition, by suppressing the adhesion of the sublimate to the ceiling surface of the chamber, it is possible to save the time and effort of removing the substrate heating unit and the like in order to clean the ceiling surface of the chamber. Furthermore, by providing a plurality of shielding plates, it is easier to replace the shielding plate compared to a case where a single shielding plate (for example, a large-sized shielding plate of G6 size) is provided, and therefore, the maintainability is excellent. In addition, by suppressing the adhesion of the sublimated product to the ceiling surface of the chamber and the substrate heating portion, it is possible to suppress the sublimation product from directly falling onto the substrate. Even in the case where it is assumed that the sublimate adheres to the ceiling surface of the chamber or the substrate heating section, by providing a plurality of shielding plates between the substrate and the substrate heating section, it is possible to prevent the sublimate from directly falling onto the substrate.
在上述基板加熱裝置中,前述遮蔽板也可以以相對於前述紅外線的照射方向交叉的方式延伸。 根據該構成,能夠盡可能地抑制紅外線透過遮蔽板引起的損耗。In the above-mentioned substrate heating device, the shielding plate may extend so as to cross the irradiation direction of the infrared rays. According to this configuration, it is possible to suppress the loss caused by the transmission of infrared rays through the shielding plate as much as possible.
在上述基板加熱裝置中,從前述遮蔽板的長邊方向觀察時,前述遮蔽板也可以彎曲成弧狀。 根據該構成,與遮蔽板為矩形板狀的情況相比,能夠提高遮蔽板的剛性。此外,在遮蔽板由多個橫跨構件支撐的情況下,能夠盡可能地減少橫跨構件的根數。In the substrate heating device described above, the shielding plate may be curved in an arc shape when viewed from the longitudinal direction of the shielding plate. According to this structure, the rigidity of the shielding plate can be improved compared with the case where the shielding plate has a rectangular plate shape. In addition, when the shielding plate is supported by a plurality of straddling members, the number of straddling members can be reduced as much as possible.
在上述基板加熱裝置中,前述遮蔽板也可以以朝向前述基板加熱部呈凸起的方式彎曲。 根據該構成,由於能夠在遮蔽板彎曲的部分沿遮蔽板的長邊方向製造昇華物的流動,因此能夠更有效地抑制昇華物向腔室的頂面及基板加熱部附著。另外,在遮蔽板彎曲的部分附著有昇華物的情況下容易去除昇華物,因此維護性優異。進而,即便在相鄰的2個遮蔽板之間存在間隙,昇華物也難以從間隙洩漏。In the substrate heating device described above, the shielding plate may be curved so as to be convex toward the substrate heating portion. According to this configuration, since the flow of the sublimate can be produced in the curved portion of the shielding plate in the longitudinal direction of the shielding plate, it is possible to more effectively suppress the adhesion of the sublimate to the ceiling surface of the chamber and the substrate heating section. In addition, when the sublimation is attached to the curved portion of the shielding plate, it is easy to remove the sublimation, and therefore, it is excellent in maintainability. Furthermore, even if there is a gap between two adjacent shielding plates, it is difficult for the sublimate to leak from the gap.
在上述基板加熱裝置中,前述遮蔽板具備形成於前述遮蔽板的短邊方向的一端的第一端面、與形成於前述遮蔽板的前述短邊方向的另一端的第二端面,前述第一端面以及前述第二端面也可以配置為從前述遮蔽板的前述長邊方向觀察時為相互正交。 根據該構成,由於能夠利用第一端面以及第二端面使紅外線從基板加熱部朝向基板擴散,因此能夠加熱整個基板。In the above-mentioned substrate heating device, the shielding plate includes a first end surface formed at one end of the shielding plate in the short-side direction, and a second end surface formed at the other end of the shielding plate in the short-side direction, and the first end surface And the said 2nd end surface may be arrange|positioned so that it may mutually orthogonally cross when it sees from the said longitudinal direction of the said shielding board. According to this configuration, since infrared rays can be diffused from the substrate heating portion toward the substrate by the first end surface and the second end surface, the entire substrate can be heated.
在上述基板加熱裝置中,也可以在相鄰的2個前述遮蔽板之間設置有間隙。 根據該構成,與相鄰的2個遮蔽板相互接觸的情況相比難以產生陰影,因此能夠抑制基板的加熱不均。In the above-mentioned substrate heating device, a gap may be provided between the two adjacent shielding plates. According to this configuration, compared with the case where two adjacent shielding plates are in contact with each other, shadows are less likely to be generated, and therefore, uneven heating of the substrate can be suppressed.
在上述基板加熱裝置中,更具備多個橫跨構件,其係設置在前述基板與前述基板加熱部之間、以相對於前述紅外線的照射方向交叉的方式延伸;前述遮蔽板也可以支撐於前述多個橫跨構件。 根據該構成,能夠利用多個橫跨構件穩定地支撐遮蔽板。In the above-mentioned substrate heating device, a plurality of straddling members are further provided, which are provided between the substrate and the substrate heating portion and extend so as to cross the irradiation direction of the infrared rays; the shielding plate may also be supported on the Multiple span members. According to this configuration, the shielding plate can be stably supported by the plurality of straddling members.
在上述基板加熱裝置中,前述遮蔽板以相對於前述橫跨構件的長邊方向交叉的方式延伸,前述多個橫跨構件可以是設置在前述遮蔽板的長邊方向的一端的第一橫跨構件、與設置在前述遮蔽板的長邊方向的另一端的第二橫跨構件。 根據該構成,由於利用第一橫跨構件與第二橫跨構件支撐遮蔽板的長邊方向的兩端,因此能夠更穩定地支撐遮蔽板。此外,在僅支撐遮蔽板的長邊方向的兩端的情況下,與利用橫跨構件支撐遮蔽板的長邊方向的中央部的情況相比,能夠抑制由於產生陰影而導致的基板的加熱不均。In the above-mentioned substrate heating device, the shielding plate extends so as to intersect with the longitudinal direction of the transverse member, and the plurality of transverse members may be a first transverse member provided at one end of the longitudinal direction of the shielding plate. A member, and a second spanning member provided at the other end of the shielding plate in the longitudinal direction. According to this structure, since the both ends of the longitudinal direction of the shielding plate are supported by the 1st span member and the 2nd spanning member, the shielding board can be supported more stably. In addition, in the case of supporting only both ends of the shielding plate in the longitudinal direction, compared with the case where the center portion of the shielding plate in the longitudinal direction is supported by a cross member, it is possible to suppress uneven heating of the substrate due to the generation of shadows. .
在上述基板加熱裝置中,也可以在基板的一面塗布有用於形成聚醯亞胺的溶液。 根據該構成,在形成聚醯亞胺時,能夠抑制昇華物向腔室的頂面以及基板加熱部附著。In the above-mentioned substrate heating device, a solution for forming polyimide may be applied to one surface of the substrate. According to this configuration, when polyimide is formed, it is possible to suppress the adhesion of the sublimated product to the ceiling surface of the chamber and the substrate heating portion.
本發明的其中一樣態的基板處理系統的特徵在於,包括上述基板加熱裝置。 根據該構成,在基板處理系統中能夠抑制昇華物向腔室的頂面以及基板加熱部附著。 [發明效果]One aspect of the substrate processing system of the present invention is characterized by including the above-mentioned substrate heating device. According to this configuration, in the substrate processing system, it is possible to suppress the adhesion of the sublimated product to the ceiling surface of the chamber and the substrate heating unit. [Effects of the invention]
根據本發明,能夠提供一種可抑制昇華物向腔室的頂面以及基板加熱部附著的基板加熱裝置以及基板處理系統。According to the present invention, it is possible to provide a substrate heating device and a substrate processing system that can suppress the adhesion of sublimates to the ceiling surface of the chamber and the substrate heating portion.
以下,參閱圖面,說明本發明的實施方式。在以下的說明中,設定XYZ直角坐標系,在參閱該XYZ直角坐標系的同時對各構件的位置關係進行說明。將水平面內的規定方向設為X方向,將在水平面內與X方向正交的方向設為Y方向,將分別與X方向以及Y方向正交的方向(即垂直方向)設為Z方向。Hereinafter, referring to the drawings, embodiments of the present invention will be described. In the following description, an XYZ rectangular coordinate system is set, and the positional relationship of each member is described while referring to the XYZ rectangular coordinate system. The predetermined direction in the horizontal plane is the X direction, the direction orthogonal to the X direction in the horizontal plane is the Y direction, and the directions (that is, the vertical direction) orthogonal to the X direction and the Y direction are respectively the Z direction.
<基板加熱裝置>
圖1是實施方式所涉及的基板加熱裝置1的立體圖。
如圖1所示,基板加熱裝置1具備腔室2、壓力調整部3、氣體供給部4、加熱器單元6(基板加熱部)、基底板7、溫度檢測部9、壓力檢測部14、氣體液化回收部11、冷卻部17(參閱圖2)、遮熱部30、遮蔽部40、遮蔽支撐部50以及控制部15。控制部15總體控制基板加熱裝置1的構成要素。
另外,在圖1中用雙點鏈線示出腔室2。<Substrate heating device>
FIG. 1 is a perspective view of a
<腔室>
在腔室2的內部形成有可收容基板10的收容空間2S。基板10以及加熱器單元6被收容在共用的腔室2。腔室2形成為長方體的箱狀。<Chamber>
A
如圖2所示,腔室2具有可上下分離的分割結構。腔室2具備形成為在下方開口的箱狀的上部結構體21、形成為在上方開口的箱狀的下部結構體22、將上部結構體21和下部結構體22可分離地連結的連結部23。As shown in Fig. 2, the
上部結構體21具備矩形板狀的頂板25和與頂板25的外周緣相接的矩形框狀的上部周壁26。
下部結構體22具備與頂板25對置的矩形板狀的底板27和與底板27的外周緣相接的矩形框狀的下部周壁28。在下部周壁28設置有用於將惰性氣體供給至腔室2內的閥門29。The
例如,若解除上部結構體21與下部結構體22的連結而將上部結構體21分離,則下部結構體22在上方開口。在下部結構體22在上方開口的狀態下,可進行基板10的搬入以及搬出。在將基板10搬入下部結構體22內後,將上部結構體21與下部結構體22連結,由此可在密閉空間內收容基板10。例如,透過將上部結構體21與下部結構體22經由密封構件等無間隙地連結,能夠提高腔室2內的氣密性。For example, if the
<壓力調整部>
壓力調整部3可調整腔室2內的壓力。如圖1所示,壓力調整部3包括連接於腔室2的真空管道3a。真空管道3a是沿Z方向延伸的圓筒狀的管道。例如,在X方向上隔開間隔地配置有多個真空管道3a。在圖1中,僅示出1個真空管道3a。另外,真空管道3a的設置數量沒有限定。真空管道3a只要與腔室2連接即可,真空管道3a的連接部位沒有限定。在圖2的例子中,抽真空的管線設置於腔室2的底板27(圖2中的箭頭真空)。<Pressure adjustment department>
The
例如,壓力調整部3具備泵機構等壓力調整機構。壓力調整機構具備真空泵13。真空泵13與管線連接,該管線在真空管道3a中從與腔室2的連接部(上端部)為相反側的部分(下端部)延伸。For example, the
壓力調整部3可對基板10的收容空間2S的環境氣體進行壓力調整,該基板10塗布了用於形成聚醯亞胺膜(聚醯亞胺)的溶液(以下稱為「聚醯亞胺形成用液」)。例如,聚醯亞胺形成用液含有聚醯胺酸或聚醯亞胺粉末。聚醯亞胺形成用液僅塗布在呈矩形板狀的基板10的第一面10a(上表面)。
另外,向基板10塗布的塗布物(被處理物)並不限於聚醯亞胺形成用液,只要是用於在基板10形成規定的膜的溶液即可。The
此外,雖然壓力調整部3可對收容空間2S的環境氣體進行壓力調整,但也可以另外在該壓力調整部3內設置向收容空間2S供給氮氣(N2
)、氦氣(He)、氬氣(Ar)等惰性氣體的機構(以下也稱為「惰性氣體供給機構」)。由此,能夠將收容空間2S調整為期望的壓力條件。
此外,還可以如後述的氣體供給部4那樣,設置與壓力調整部3分開的惰性氣體供給機構。In addition, although the
<氣體供給部>
氣體供給部4可調整腔室2的內部環境氣體的狀態。氣體供給部4包括與腔室2連接的氣體供給管道4a。氣體供給管道4a是沿Z方向延伸的圓筒狀的管道。例如,在X方向上隔開間隔地配置有多個氣體供給管道4a。在圖1中,僅示出1個氣體供給管道4a。另外,氣體供給管道4a的設置數量沒有限定。真空管道3a只要與腔室2連接即可,氣體供給管道4a的連接部位沒有限定。<Gas supply department>
The
氣體供給部4可透過將惰性氣體供給至收容空間2S來調整收容空間2S的狀態。氣體供給部4將氮氣(N2
)、氦氣(He)、氬氣(Ar)等惰性氣體向腔室2內供給。在圖2的例子中,在腔室2的頂板25以及下部周壁28分別設置有2個N2
供給部(圖2中的箭頭N2
)。另外,氣體供給部4也可以透過在基板降溫時供給氣體從而將前述氣體用於基板冷卻。The
氣體供給部4可通過向收容空間2S供給壓縮乾燥空氣(CDA)來調整收容空間2S的狀態。在圖2的例子中,在腔室的頂板25以及底板27分別設置有2個CDA供給部(圖2中的箭頭CDA)。例如,氣體供給部4也可以具備用於去除通過氣體供給管道4a內的氣體中的微細塵埃的濾塵器與用於去除水分的濾霧器。The
能夠利用氣體供給部4調整腔室2的內部環境氣體的氧濃度。腔室2的內部環境氣體的氧濃度(品質基準)優選越低越好。具體而言,優選使腔室2的內部環境氣體的氧濃度為100ppm以下,更優選為20ppm以下。
例如,在將塗布於基板10的聚醯亞胺形成用液固化時的環境氣體中,透過像這樣地使氧濃度為優選的上限以下,能夠容易進行聚醯亞胺形成用液的固化。
另外,圖2中箭頭EXH示出用於將腔室2內的氣體排出至腔室2外而設置於下部周壁28的排氣管線。The
<加熱器單元>
如圖1所示,加熱器單元6被配置在腔室2內的上方。如圖2所示,加熱器單元6被支撐在頂板25。在加熱器單元6與頂板25之間設置有支撐加熱器單元6的支撐構件19。加熱器單元6被固定在腔室2內的靠近頂板25的固定位置。加熱器單元6的紅外線加熱器140利用支撐構件19懸掛於頂板25。<Heater unit>
As shown in FIG. 1, the
圖3是實施方式所涉及的加熱器單元6的俯視圖。圖4是實施方式所涉及的紅外線加熱器140的俯視圖。
如圖3所示,加熱器單元6具備多個(例如在本實施方式中為20台)紅外線加熱器140。多個紅外線加熱器140可被單獨控制。控制部15(參閱圖1)可單獨控制多個紅外線加熱器140。FIG. 3 is a plan view of the
如圖1所示,紅外線加熱器140可利用紅外線對基板10進行加熱。紅外線加熱器140可階段性地加熱基板10。例如,基板10的加熱溫度範圍是200℃以上且600℃以下的範圍。紅外線加熱器140配置在基板10的第一面10a(一面)側。紅外線加熱器140配置於腔室2的頂板25側。As shown in FIG. 1, the
例如,紅外線加熱器140的峰波長範圍是1.5μm以上且4μm以下的範圍。另外,紅外線加熱器140的峰波長範圍並不限於上述範圍,能夠根據要求規格設定為各種範圍。For example, the peak wavelength range of the
如圖4所示,紅外線加熱器140呈在多個部位彎折的管狀。紅外線加熱器140的外形在俯視下呈矩形形狀。例如,紅外線加熱器140的各邊的長度為250mm左右。例如,紅外線加熱器140由石英管形成。As shown in FIG. 4, the
紅外線加熱器140具備直邊部組141、彎邊部組142、第一罩部143、第二罩部144、第一導入部145、第二導入部146。The
直邊部組141具備多個(例如,在本實施方式中為9個)直邊部141a~141i。直邊部141a~141i呈在第一方向V1具有長邊的直管狀。在與第一方向V1正交(交叉)的第二方向V2上排列配置多個直邊部141a~141i。多個直邊部141a~141i在第二方向V2上隔開實質上相同的間隔U1 (中心軸間的間距)而配置。直邊部141a、141b、141c、141d、141e、141f、141g、141h、141i從第二方向V2的一側向另一側按該順序配置。The straight
彎邊部組142具備多個(例如,在本實施方式中為8個)彎邊部142a~142h。彎邊部142a~142h以向外側凸起的方式彎折。彎邊部142a~142h連結相鄰的2個直邊部141a~141i的端部。例如,彎邊部142a將直邊部141a的一端部與直邊部141b的一端部連結。即,彎邊部142a~142h是以連結紅外線加熱器140中的相鄰的2個直邊部141a~141i的端部的方式屈曲的屈曲部。在俯視下,彎邊部142a~142h呈向外側凸起的U字管狀。彎邊部142a、142b、142c、142d、142e、142f、142g、142h從第二方向V2的一側向另一側按該順序配置。The curled
第一罩部143以及第二罩部144以從外側覆蓋多個彎邊部142a~142h的方式在第二方向V2上延伸為直線狀。
第一罩部143從第一方向V1的一側覆蓋4個彎邊部142b、142d、142f、142h。
第二罩部144從第一方向V1的另一側覆蓋4個彎邊部142a、142c、142e、142g。The
第一罩部143與第二方向V2的一側的直邊部141a的一端部連結。第一罩部143呈在第二方向V2上具有長邊的直管狀。第一罩部143與彎邊部142b、142d、142f、142h之間的間隔U2(中心軸間的間距)的大小與相鄰的2個直邊部141a~141i之間的間隔U1的大小實質上相同。The
第二罩部144與第二方向V2的另一側的直邊部141i的一端部連結。第二罩部144呈L字管狀。即,第二罩部144具備:在第二方向V2上具有長邊的罩主體144a、以及與罩主體144a的一端部連結並且在第一方向V1上具有長邊的延伸部144b。第二罩部144與彎邊部142a、142c、142e、142g之間的間隔U3(中心軸間的間距)與相鄰的2個直邊部141a~141i之間的間隔U1為實質上相同的大小。The
第一導入部145設置在紅外線加熱器140的一端。第一導入部145配置在紅外線加熱器140的一邊的一側。具體而言,第一導入部145設置在第一罩部143的一端。第一導入部145的一部分在俯視下進入紅外線加熱器140的外形內。The
第二導入部146設置在紅外線加熱器140的另一端。第二導入部146配置在紅外線加熱器140的一邊的另一側。第二導入部146在第二方向V2上配置在第一導入部145的相反側。具體而言,第二導入部146設置在第二罩部144中的延伸部144b的一端。第二導入部146的一部分在俯視下進入紅外線加熱器140的外形內。The
如圖3所示,加熱器單元6透過鋪設多個(例如在本實施方式中為20台)紅外線加熱器140而構成。
加熱器單元6具備一對第一紅外線加熱器組140A、一對第二紅外線加熱器組140B。第一紅外線加熱器組140A與第二紅外線加熱器組140B交替地鋪設在第二方向V2上從而配置。As shown in FIG. 3, the
第一紅外線加熱器組140A具備多個(例如在本實施方式中為5台)第一紅外線加熱器140a1~140a5。一對第一紅外線加熱器組140A具備合計10台第一紅外線加熱器140a1~140a5。多個第一紅外線加熱器140a1~140a5鋪設在第一方向V1(1個方向)從而配置。第一紅外線加熱器140a1、140a2、140a3、140a4、140a5從第一方向V1的一側向另一側按該順序配置。The first
第二紅外線加熱器組140B具備多個(例如在本實施方式中為5台)第二紅外線加熱器140b1~140b5。一對第二紅外線加熱器組140B具備合計10台第二紅外線加熱器140b1~140b5。多個第二紅外線加熱器140b1~140b5鋪設在第一方向V1從而配置。第二紅外線加熱器140b1、140b2、140b3、140b4、140b5從與第一方向V1平行的方向的一側向另一側按該順序配置。The second
第二紅外線加熱器140b1~140b5在俯視下具有與第一紅外線加熱器140a1~140a5相同的形狀。第二紅外線加熱器140b1~140b5在俯視下具有將第一紅外線加熱器140a1~140a5翻轉(旋轉180度)後的形狀。具體而言,第二紅外線加熱器140b1~140b5在俯視下具有將第一紅外線加熱器140a1~140a5以其中心為起點向右(順時針)旋轉180度後的形狀。The second infrared heaters 140b1 to 140b5 have the same shape as the first infrared heaters 140a1 to 140a5 in a plan view. The second infrared heaters 140b1 to 140b5 have a shape in which the first infrared heaters 140a1 to 140a5 are inverted (rotated by 180 degrees) in a plan view. Specifically, the second infrared heaters 140b1 to 140b5 have a shape in which the first infrared heaters 140a1 to 140a5 are rotated 180 degrees to the right (clockwise) from the center of the first infrared heaters 140a1 to 140a5 in a plan view.
<基底板>
如圖1所示,基底板7配置於腔室2內的下方。基底板7被配置在基板10的與第一面10a為相反側的第二表面10b(下表面)側。如圖2所示,基底板7配置於腔室2的底板27側。基底板7呈矩形板狀。在基底板7設置有從下方支撐基板10的支撐銷8。<Base plate>
As shown in FIG. 1, the
支撐銷8可支撐基板10的第二表面10b。支撐銷8是上下延伸的棒狀的構件。支撐銷8的末端(上端)與基板10的第二表面10b抵接。在與第二表面10b平行的方向(X方向以及Y方向)上隔開間隔地設置有多個支撐銷8。多個支撐銷8分別形成為大致相同的長度。多個支撐銷8的末端配置在與第二表面10b平行的面內(XY平面內)。The
<溫度檢測部>
溫度檢測部9配置在收容空間2S。溫度檢測部9可檢測基板10的溫度。例如,溫度檢測部9是熱電偶。溫度檢測部9安裝在支撐銷8。溫度檢測部9實質上沿水準方向延伸。溫度檢測部9的末端與基板10的第二表面10b對置。<Temperature detection department>
The
溫度檢測部9的前端配置在基板10與基底板7之間。溫度檢測部9的末端的位置比基底板7更靠近基板10。溫度檢測部9的末端接近基板10的第二表面10b。溫度檢測部9的前端與基板10的第二表面10b之間的分離距離在各多個溫度檢測部9中實質上相同。The tip of the
溫度檢測部9在X方向以及Y方向的各方向上隔開間隔地配置有多個。在本實施方式中,溫度檢測部9配置成3行3列(即,在X方向上3個且Y方向上3個)共計9個。在圖2中,示出在X方向上隔開間隔地配置的3個溫度檢測部9。溫度檢測部9配置在每個設定於基板10的多個(例如9個)分區。溫度檢測部9的末端作為檢測基板10的各分區的溫度的感測器發揮功能。A plurality of
另外,溫度檢測部9的數量不限於9個。溫度檢測部9的數量可設定為任意數量。例如,優選多個溫度檢測部9配置在與基板10的各分區相對應的位置。
此外,溫度檢測部9不限於熱電偶。例如,溫度檢測部9可以是輻射溫度計等非接觸溫度感測器。例如,溫度檢測部9不限於非接觸溫度感測器,也可以是接觸式溫度感測器。In addition, the number of
<壓力檢測部>
壓力檢測部14(參閱圖1)可檢測收容空間2S的壓力(以下也稱為「腔室內壓力」)。例如,壓力檢測部14的主體部(感測器)配置在腔室2內。例如,壓力檢測部14的顯示部(壓力顯示器)配置於腔室2外。例如,壓力檢測部14是數位壓力感測器。另外,雖然在圖1中僅圖示了1個壓力檢測部14,但是壓力檢測部14的數量不限於1個,也可以是多個。<Pressure detection department>
The pressure detecting unit 14 (refer to FIG. 1) can detect the pressure of the
<氣體液化回收部>
如圖1所示,氣體液化回收部11與壓力調整部3(真空泵13)的管線連接。氣體液化回收部11配置在壓力調整部3的管線中的比真空泵13更靠近下游側。氣體液化回收部11使通過真空管道3a的氣體液化,並且可回收從塗布於基板10的聚醯亞胺形成用液中揮發的溶劑。<Gas liquefaction recovery department>
As shown in FIG. 1, the gas
假設在氣體液化回收部11配置在壓力調整部3的管線中的比真空泵13更靠近上游側的情況下,在上游側液化的液體在下一次減壓時有時會被氣化,抽真空的時間有可能發生延遲。與此相對,根據本實施方式,由於氣體液化回收部11配置在壓力調整部3的管線中的比真空泵13更靠近下游側,因此在下游側液化的液體不會在下一次減壓時被氣化,所以能夠避免抽真空的時間發生延遲。Assuming that the gas
<冷卻部>
冷卻部17可對腔室2進行冷卻。如圖2所示,冷卻部17具備冷媒通過部18,前述冷媒通過部18配置在腔室2的構成構件的內部,並且可供冷媒通過。例如,冷媒是水等液體。在冷媒通過部18中,由未圖示的泵使冷媒流動。雖未圖示,但在冷媒通過部18中設置有冷媒的供給口以及排出口。另外,冷媒並不限定於水等液體。例如,冷媒也可以是空氣等氣體。<Cooling part>
The cooling
在腔室2設置有多個冷媒通過部18。在圖2的例子中,冷媒通過部18分別設置在腔室2的頂板25、底板27以及下部周壁28(閥門29)。由此,能夠使腔室2的頂板25、底板27以及下部周壁28(閥門29)的各自的溫度保持恒定。
另外,冷媒通過部18未設置在上部周壁26。這是由於在上部周壁26設置有腔室固定用的螺栓(未圖示)。A plurality of
<遮熱部>
遮熱部30配置在加熱器單元6與腔室2之間。由此,能夠防止來自加熱器單元6的紅外線直接照射到腔室2。遮熱部30具備多個遮熱板31。遮熱部30是在其厚度方向上隔開間隔地配置有多個遮熱板31的結構體。在本實施方式中,遮熱部30具備三塊遮熱板31。例如,遮熱板31由不銹鋼(SUS)等金屬形成。另外,遮熱板31不限於金屬,能夠根據要求規格由各種材料形成。<Heat shielding part>
The
遮熱部30在腔室2設置有多個。在圖2的例子中,遮熱部30以分別與腔室2的頂板25、上部周壁26、底板27(基底板7)以及下部周壁28(閥門29)面臨的方式設置。由此,能夠防止來自加熱器單元6的紅外線對腔室2的頂板25、上部周壁26、底板27以及下部周壁28(閥門29)直接照射。A plurality of
雖然未圖示,但在與腔室2的頂板25面臨的遮熱部30中,在與支撐構件19重疊的部分形成有貫通孔。另一方面,在與底板27(基底板7)面臨的遮熱部30中,在與支撐銷8重疊的部分形成有貫通孔。Although not shown, in the
<遮蔽部>
遮蔽部40設置在基板10與加熱器單元6之間。遮蔽部40以從上方覆蓋基板10的方式配置。如圖5所示,遮蔽部40具備使紅外線透過且遮擋基板加熱時的昇華物的多個遮蔽板41。多個遮蔽板41各自共通。多個遮蔽板41各自設置在大致相同的高度。<Shielding part>
The shielding
例如,遮蔽板41的厚度為0.5mm以上3mm以下。在本實施方式中,遮蔽板41的厚度為1.8mm左右。例如,遮蔽板41由石英玻璃形成。另外,遮蔽板41不限於石英玻璃,能夠根據要求規格由各種材料形成。此外,遮蔽板41的厚度並不限於上述厚度,能夠根據要求規格進行變更。For example, the thickness of the shielding
如圖2所示,遮蔽板41以相對於紅外線的照射方向J1交叉的方式延伸。在圖2中,將紅外線的照射方向J1作為豎直下方進行圖示。遮蔽板41以與紅外線的照射方向J1大致正交的方式延伸。遮蔽板41在X方向上以直線狀延伸。As shown in FIG. 2, the shielding
如圖6所示,從遮蔽板41的長邊方向(X方向)觀察時,遮蔽板41為彎曲成弧狀。遮蔽板41以朝向加熱器單元6(參閱圖1)呈凸起的方式彎曲。例如,遮擋板41能夠通過將石英導管(由石英玻璃形成的圓筒部件)切割成各為90度中心角的導管的四分之一來製作。另外,遮蔽板41的製作方法不限於此,也可以通過使用了模具等的其它方法來製作。As shown in FIG. 6, when viewed from the longitudinal direction (X direction) of the shielding
遮蔽板41具備形成於遮蔽板41的短邊方向的一端的第一端面41a、與形成於遮蔽板41的短邊方向的另一端的第二端面41b。在此,遮蔽板41的短邊方向是指從遮蔽板41的長邊方向觀察時為沿著遮蔽板41的圓弧的方向。第一端面41a以及第二端面41b以從遮蔽板41的長邊方向觀察時為相互正交的方式配置。圖6中元件符號Cp表示第一端面41a的延長線與第二端面41b的延長線相交的點(遮蔽板41的圓弧的中心點)。The shielding
如圖6所示,在相鄰的2個遮蔽板41之間設置有間隙42。例如,間隙42設置在涵蓋遮蔽板41的長邊方向的整體。例如,間隙42的大小(Y方向的間隔)為遮蔽板41的厚度以下。間隙42設置在多個遮蔽板41的各個遮蔽板之間。As shown in FIG. 6, a
<遮蔽支撐部>
如圖2所示,遮蔽支撐部50設置在基板10與加熱器單元6之間。遮蔽支撐部50具備支撐遮蔽板41的多個橫跨構件51、52。多個橫跨構件51、52各自共通。<Shielding support part>
As shown in FIG. 2, the shielding
橫跨構件51、52以相對於紅外線的照射方向J1交叉的方式延伸。橫跨構件51、52以與紅外線的照射方向J1以及遮蔽板41的長邊方向各自大致正交的方式延伸。橫跨構件51、52沿Y方向以直線狀延伸。橫跨構件51、52具有圓柱狀。另外,橫跨構件51、52的形狀不限於圓柱狀,也可以是矩形板狀等其它形狀。The
遮蔽板41被多個橫跨構件51、52支撐。遮蔽板41以相對於橫跨構件51、52的長邊方向大致正交(交叉)的方式延伸。多個橫跨構件51、52是設置在遮蔽板41的長邊方向的一端的第一橫跨構件51、與設置在遮蔽板41的長邊方向的另一端的第二橫跨構件52。The shielding
第一橫跨構件51以及第二橫跨構件52的各自的兩端部分別被支撐在下部周壁28的Y方向兩側面。第一橫跨構件51以及第二橫跨構件52設置在彼此大致相同的高度。在本實施方式中,遮蔽板41僅由第一橫跨構件51以及第二橫跨構件52這兩根支撐。第一橫跨構件51以及第二橫跨構件52之間的間隔(X方向的間隔)長於基板10的長邊方向的長度。Both end portions of the
<遮蔽板的作用>
圖7是用於說明實施方式所涉及的遮蔽板41的作用的圖。
如上所述,遮蔽板41設置在基板10與加熱器單元6之間。因此,能夠利用遮蔽板41遮擋從基板10朝向腔室2的頂面(頂板25的下表面)以及加熱器單元6的昇華物(圖7中沿箭頭W1方向流動的昇華物)。<The role of the shielding plate>
FIG. 7 is a diagram for explaining the function of the shielding
在本實施方式中,遮蔽板41以朝向上方呈凸起的方式彎曲為弧狀。因此,能夠將圖7中沿箭頭W1方向流動的昇華物沿著遮蔽板41彎曲的部分(弧狀的凹面)向遮蔽板41的最上部(Y方向中央部)引導(圖7中箭頭W2方向),並且沿著遮蔽板41的長邊方向向遮蔽板41的長邊方向端部(X方向端部)引導(圖7中箭頭W3方向)。In the present embodiment, the shielding
如此,在本實施方式中,從基板10朝向腔室2的頂面以及加熱器單元6的昇華物按圖7中箭頭W1、W2、W3的順序流動。因此,即便在相鄰的2個遮蔽板41之間存在間隙42,也將昇華物向遮蔽板41的凹面內側(第一端面41a與第二端面41的Y方向之間)引導而難以從間隙42洩漏。In this manner, in the present embodiment, the sublimation from the
<作用效果>
如上所述,根據本實施方式,基板加熱裝置1包含:腔室2,在內部形成有可收容基板10的收容空間2S;加熱器單元6,配置在基板10的第一面10a側,並且可通過紅外線加熱基板10;多個遮蔽板41,設置在基板10與加熱器單元6之間,使紅外線透過並且遮擋基板加熱時的昇華物。
根據該構成,通過在基板10與加熱器單元6之間設置遮蔽板41,能夠利用遮蔽板41遮擋從基板10朝向腔室2的頂面以及加熱器單元6的昇華物。因此,能夠抑制昇華物向腔室2的頂面以及加熱器單元6附著。
此外,通過抑制昇華物向腔室2的頂面附著,能夠省去為了清掃腔室2的頂面而卸下加熱器單元6等的工夫。
進而,通過設置多個遮蔽板41,與設置單一的遮蔽板(例如G6尺寸的大型的遮蔽板)的情況相比,容易更換遮蔽板41,因此維護性優異。
此外,通過抑制昇華物向腔室2的頂面以及加熱器單元6附著,能夠抑制昇華物下落至基板10。即便在假設昇華物附著在腔室2的頂面或加熱器單元6的情況下,也能夠通過在基板10與加熱器單元6之間設置有多個遮蔽板41,抑制昇華物直接下落至基板10。<Effects>
As described above, according to the present embodiment, the
在本實施方式中,遮蔽板41以相對於紅外線的照射方向J1交叉的方式延伸,從而起到以下效果。
能夠盡可能地抑制紅外線透過遮蔽板41引起的損耗。In the present embodiment, the shielding
在本實施方式中,從遮蔽板41的長邊方向觀察時,遮蔽板41彎曲成弧狀,從而起到以下效果。
與遮蔽板41為矩形板狀的情況相比,能夠提高遮蔽板41的剛性。此外,在遮蔽板41由多個橫跨構件51、52支撐的情況下,能夠盡可能地減少橫跨構件51、52的根數。In this embodiment, when viewed from the longitudinal direction of the shielding
在本實施方式中,遮蔽板41以朝向加熱器單元6呈凸起的方式彎曲,從而起到以下效果。
由於能夠在遮蔽板41彎曲的部分沿遮蔽板41的長邊方向製作昇華物的流動,因此能夠更有效地抑制昇華物向腔室2的頂面及加熱器單元6附著。另外,在遮蔽板41彎曲的部分附著有昇華物的情況下容易去除昇華物,因此維護性優異。進而,即便在相鄰的2個遮蔽板41之間存在間隙42,昇華物也難以從間隙42洩漏。In the present embodiment, the shielding
在本實施方式中,遮蔽板41具備:形成於遮蔽板41的短邊方向的一端的第一端面41a、以及與形成於遮蔽板41的短邊方向的另一端的第二端面41b;被配置為,從遮蔽板41的長邊方向觀察時第一端面41a以及第二端面41b相互正交,從而起到以下效果。
由於能夠通過第一端面41a以及第二端面41b使紅外線從加熱器單元6朝向基板10擴散,因此能夠加熱整個基板10。In this embodiment, the shielding
在本實施方式中,在相鄰的2個遮蔽板41之間設置有間隙42,從而起到以下效果。
與相鄰的2個遮蔽板41相互接觸的情況相比,難以產生陰影,因此能夠抑制基板10的加熱不均。In this embodiment, a
在本實施方式中具備多個橫跨構件51、52,設置在基板10與加熱器單元6之間、以相對於紅外線的照射方向J1交叉的方式延伸,遮蔽板41被多個橫跨構件51、52支撐,從而起到以下效果。
能夠利用多個橫跨構件51、52穩定地支撐遮蔽板41。In this embodiment, a plurality of straddling
在本實施方式中,遮蔽板41以相對於橫跨構件51、52的長邊方向交叉的方式延伸,多個橫跨構件51、52是設置在遮蔽板41的長邊方向的一端的第一橫跨構件51、與設置在遮蔽板41的長邊方向的另一端的第二橫跨構件52,從而起到以下效果。
由第一橫跨構件51以及第二橫跨構件52支撐遮蔽板41的長邊方向的兩端,因此能夠更穩定地支撐遮蔽板41。此外,在僅支撐遮蔽板41的長邊方向的兩端的情況下,與利用橫跨構件支撐遮蔽板41的長邊方向的中央部的情況相比,能夠抑制由於產生陰影而導致的基板10的加熱不均。In this embodiment, the shielding
在本實施方式中,在基板10的第一面10a塗布有用於形成聚醯亞胺的溶液,由此起到以下效果。
在形成聚醯亞胺時,能夠抑制昇華物向腔室2的頂面以及加熱器單元6附著。In this embodiment, the
<變形例> 另外,在上述的例子中示出的各構成構件的諸形狀或組合等為一例,可基於設計要求等進行各種變更。 在上述實施方式中,基板加熱部是具備多個紅外線加熱器的加熱器單元,但不限於此。例如,基板加熱部也可以是單一的紅外線加熱器。<Modifications> In addition, the various shapes or combinations of the constituent members shown in the above examples are just examples, and various changes can be made based on design requirements and the like. In the above embodiment, the substrate heating unit is a heater unit provided with a plurality of infrared heaters, but it is not limited to this. For example, the substrate heating unit may be a single infrared heater.
在上述實施方式中,遮蔽板以朝向加熱器單元呈凸起的方式彎曲成弧狀,但不限於此。例如,如圖8所示,遮蔽板141也可以是以朝向加熱器單元的相反側(下側)呈凸起的方式彎曲成弧狀。In the above embodiment, the shielding plate is curved in an arc shape in a convex manner toward the heater unit, but it is not limited to this. For example, as shown in FIG. 8, the shielding
在上述實施方式中,從遮蔽板的長邊方向觀察時,遮蔽板彎曲成弧狀,但不限於此。例如,如圖9所示,也可以是從遮蔽板241的長邊方向觀察時,遮蔽板241具有V字狀。例如,遮蔽板241也可以具有朝向加熱器單元(上側)呈凸起的V字狀(倒V字狀)。雖然未圖示,但遮蔽板也可以具有朝向基板呈凸起的V字狀。In the above embodiment, the shielding plate is curved in an arc shape when viewed from the longitudinal direction of the shielding plate, but it is not limited to this. For example, as shown in FIG. 9, the shielding
在上述實施方式中,藉由第一橫跨構件以及第二橫跨構件來僅支撐遮蔽板的長邊方向的兩端,但不限於此。例如,如圖10所示,也可以由第三橫跨構件353支撐遮蔽板341的長邊方向的中央部。例如,遮蔽板341也可以具有矩形板狀。另外,橫跨構件的根數、遮蔽板的形狀能夠根據要求規格進行變更。In the above-mentioned embodiment, only the both ends in the longitudinal direction of the shielding plate are supported by the first cross member and the second cross member, but it is not limited to this. For example, as shown in FIG. 10, the center part of the longitudinal direction of the
在上述實施方式中,在相鄰的2個遮蔽板之間設置有間隙,但不限於此。例如,也可以不在相鄰的2個遮蔽板之間設置間隙。例如,相鄰的2個遮蔽板也可以相互接觸。In the above embodiment, a gap is provided between two adjacent shielding plates, but it is not limited to this. For example, it is not necessary to provide a gap between two adjacent shielding plates. For example, two adjacent shielding plates may be in contact with each other.
此外,也可以將本發明應用於包括上述實施方式的基板加熱裝置的基板處理系統。例如,基板處理系統是安裝在工廠等的生產線中來使用的、在基板的規定區域形成薄膜的系統。雖然未圖示,但基板處理系統例如具備:基板處理單元,包括上述基板加熱裝置;基板搬入單元,即供給收容有處理前的基板的搬入用盒(cassette),並且回收空的搬入用盒的單元;基板搬出單元,即回收收容有處理後的基板的搬出用盒,並且供給空的搬出用盒的單元;輸送單元,在基板處理單元與基板搬入單元之間輸送搬入用盒,並且在基板處理單元與基板搬出單元之間輸送搬出用盒;控制單元,總體控制各個單元。 根據該構成,通過包括上述基板加熱裝置,在基板處理系統中能夠抑制昇華物附著在腔室的頂面以及基板加熱部。In addition, the present invention can also be applied to a substrate processing system including the substrate heating device of the above-described embodiment. For example, a substrate processing system is a system that is installed in a production line such as a factory and used to form a thin film on a predetermined area of a substrate. Although not shown in the figure, the substrate processing system includes, for example, a substrate processing unit including the above-mentioned substrate heating device; Unit; substrate unloading unit, that is, a unit that collects unloaded boxes containing processed substrates, and supplies empty unloaded boxes; conveying unit, conveys the unloaded boxes between the substrate processing unit and the substrate unloading unit, and transfers the boxes to the substrate The box for transporting and unloading between the processing unit and the substrate unloading unit; the control unit, which controls each unit as a whole. According to this configuration, by including the above-mentioned substrate heating device, it is possible to suppress the adhesion of the sublimated substance to the ceiling surface of the chamber and the substrate heating part in the substrate processing system.
另外,作為上述實施方式或者其變形例而記載的各構成要素,能夠在不脫離本發明的主旨的範圍內進行適當組合,此外,也能夠在組合得到的多個構成要素之中,適當地不使用一部分的構成要素。In addition, each of the constituent elements described as the above-mentioned embodiment or its modification can be appropriately combined within a range that does not deviate from the gist of the present invention. In addition, among a plurality of constituent elements obtained by the combination, they may be appropriately combined. Use part of the constituent elements.
1:基板加熱裝置
2:腔室
2S:收容空間
6:加熱器單元(基板加熱部)
10:基板
10a:第一面(基板的一面)
41,141,241,341:遮蔽板
41a:第一端面
41b:第二端面
42:間隙
51:第一橫跨構件(橫跨構件)
52:第二橫跨構件(橫跨構件)
353:第三橫跨構件(橫跨構件)
J1:紅外線的照射方向1: substrate heating device
2:
[圖1]是實施方式所涉及的基板加熱裝置的立體圖。 [圖2]是實施方式所涉及的基板加熱裝置的剖視圖。 [圖3]是實施方式所涉及的加熱器單元的俯視圖。 [圖4]是實施方式所涉及的紅外線加熱器的俯視圖。 [圖5]是實施方式所涉及的遮蔽板的立體圖。 [圖6]是圖5的部分放大圖。 [圖7]是用於說明實施方式所涉及的遮蔽板的作用的圖。 [圖8]是實施方式的第一變形例所涉及的遮蔽板的立體圖。 [圖9]是實施方式的第二變形例所涉及的遮蔽板的立體圖。 [圖10]是實施方式的第三變形例所涉及的遮蔽板的立體圖。Fig. 1 is a perspective view of a substrate heating device according to an embodiment. [Fig. 2] is a cross-sectional view of the substrate heating device according to the embodiment. [Fig. 3] is a plan view of the heater unit according to the embodiment. [Fig. 4] is a plan view of the infrared heater according to the embodiment. Fig. 5 is a perspective view of the shielding plate according to the embodiment. [Fig. 6] is a partially enlarged view of Fig. 5. Fig. 7 is a diagram for explaining the function of the shielding plate according to the embodiment. [Fig. 8] Fig. 8 is a perspective view of a shielding plate according to a first modification of the embodiment. [Fig. 9] Fig. 9 is a perspective view of a shielding plate according to a second modification of the embodiment. [Fig. 10] Fig. 10 is a perspective view of a shielding plate according to a third modification of the embodiment.
1:基板加熱裝置 1: substrate heating device
2:腔室 2: chamber
2S:收容空間 2S: containment space
3:壓力調整部 3: Pressure adjustment department
3a:真空管道 3a: Vacuum pipeline
4:氣體供給部 4: Gas supply part
4a:氣體供給管道 4a: Gas supply pipeline
6:加熱器單元 6: heater unit
7:基底板 7: Base plate
8:支撐銷 8: Support pin
9:溫度檢測部 9: Temperature detection department
10:支撐基板 10: Support substrate
10a:第一面 10a: First side
10b:第二表面 10b: second surface
11:氣體液化回收部 11: Gas Liquefaction Recovery Department
13:真空泵 13: Vacuum pump
14:壓力檢測部 14: Pressure detection department
15:控制部 15: Control Department
30:遮熱部 30: Heat shield
31:遮熱板 31: Heat shield
40:遮蔽部 40: Shading part
41:遮蔽板 41: Shading plate
50:遮蔽支撐部 50: shielding support part
51:第一橫跨構件(橫跨構件) 51: The first cross member (cross member)
52:第二橫跨構件(橫跨構件) 52: Second cross member (cross member)
140:紅外線加熱器 140: infrared heater
J1:照射方向 J1: Irradiation direction
Claims (10)
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