JP7553292B2 - Substrate heating device and substrate processing system - Google Patents

Description

The present invention relates to a substrate heating device and a substrate processing system.

Conventionally, there is a device that uses infrared rays or the like to heat a substrate placed in a chamber (see, for example, Patent Document 1). For example, the infrared device is housed in the chamber.

JP 2015-141965 A

However, because infrared rays are irradiated onto the inner surface of the chamber, there is a high possibility that the chamber will deform or deteriorate due to heating. In addition, discoloration of the chamber will change the infrared reflectance of the inner surface of the chamber, which will affect the output of the substrate heating section and the stability of the substrate temperature, and there is a high possibility that stability will be lost when heating the substrate.

In view of the above circumstances, the present invention aims to provide a substrate heating device and a substrate processing system that can suppress deformation and deterioration of the chamber and improve stability when heating the substrate.

A substrate heating device according to one embodiment of the present invention includes a chamber having an internal storage space capable of accommodating a substrate, a substrate heating unit disposed in the storage space and capable of heating the substrate by infrared rays, and a heat shield disposed between an inner surface of the chamber and the substrate heating unit, absorbing the infrared rays and having a thickness of 1 mm or less.
According to this configuration, by including a heat shield provided between the inner surface of the chamber and the substrate heating unit, infrared rays directed toward the inner surface of the chamber can be blocked by the heat shield. Since the infrared rays directed toward the inner surface of the chamber are absorbed by the heat shield, the infrared rays are not directly irradiated onto the inner surface of the chamber. Therefore, deformation or deterioration of the chamber due to heating can be suppressed. In addition, changes in the infrared reflectance of the inner surface of the chamber due to discoloration of the chamber can be suppressed. Therefore, deformation or deterioration of the chamber can be suppressed, and stability during substrate heating can be improved.
In addition, by making the thickness of the heat shield plate 1 mm or less, the heat capacity of the heat shield plate can be reduced compared to when the thickness of the heat shield plate exceeds 1 mm. Therefore, the heat shield plate is thermally saturated quickly and the heat is easily uniform. In addition, the heat shield plate is easily cooled, so that the maintenance is excellent. Furthermore, it contributes to making the heat shield plate thinner and lighter.

In the above substrate heating apparatus, the heat shield may be provided around the periphery of the substrate on which the solution is applied.
According to this configuration, the fumes traveling from the substrate to the inner surface of the chamber can be blocked by the heat shield, so that the adhesion of sublimates to the inner surface of the chamber can be suppressed. Therefore, the change in the infrared reflectance of the inner surface of the chamber due to the adhesion of sublimates can be suppressed. Therefore, the stability during heating of the substrate can be improved.

In the above substrate heating apparatus, the heat shielding plates may be provided in a plurality of positions spaced apart from one another in the direction of irradiation of the infrared rays.
With this configuration, the multiple heat shields can gradually reduce the heat directed toward the inner surface of the chamber, making it possible to more effectively prevent the chamber from deforming or deteriorating due to heating.

In the above substrate heating apparatus, a surface of the plurality of heat shields closest to the substrate may have a higher infrared ray absorption rate than a mirror surface.
This configuration can promote the heating of the heat shield by absorbing infrared rays, thereby preventing fumes traveling from the substrate toward the inner surface of the chamber from being cooled on the surface of the heat shield and becoming sublimates, thereby preventing the adhesion of sublimates to the heat shield.

In the above-described substrate heating apparatus, the surface of each of the plurality of heat shields closest to the substrate may be black.
According to this configuration, the infrared rays are effectively absorbed by the heat shield, so that the heating of the heat shield can be more effectively promoted, and therefore the adhesion of the sublimate to the heat shield can be more effectively suppressed.

In the above substrate heating apparatus, the surface of the plurality of heat shields closest to the inner surface of the chamber may be a mirror surface.
According to this configuration, the surface of the heat shields closest to the inner surface of the chamber can reflect infrared rays. This can improve the temperature uniformity in the chamber compared to when the surface of the heat shields closest to the inner surface of the chamber is black. Furthermore, the mirror finish reduces the emissivity, so the transfer of heat to the chamber is suppressed by re-radiation from the heat shield, and the effect of suppressing the temperature rise in the chamber can be improved.

In the above substrate heating device, the heat shield may be made of metal.
With this configuration, thermal saturation occurs more quickly and the heat is more uniform than when the heat shield is made of glass.

In the above-mentioned substrate heating device, the chamber includes a top plate located above the substrate, a bottom plate located below the substrate and facing the top plate, and a peripheral wall surrounding the periphery of the substrate, and the heat shield may be provided on each of the top plate, the bottom plate and the peripheral wall.
According to this configuration, fumes traveling from the substrate toward the top plate, bottom plate, and peripheral walls of the chamber can be blocked by the heat shield, thereby suppressing adhesion of sublimate material to the top plate, bottom plate, and peripheral walls of the chamber.

In the above substrate heating apparatus, the substrate may be coated with a solution for forming a polyimide film.
According to this configuration, deformation and deterioration of the chamber can be suppressed during the formation of polyimide, and stability during heating of the substrate can be improved.

A substrate processing system according to one aspect of the present invention includes the above-described substrate heating apparatus.
According to this configuration, in the substrate processing system, deformation and deterioration of the chamber can be suppressed, and stability during substrate heating can be improved.

The present invention provides a substrate heating device and a substrate processing system that can suppress deformation and deterioration of the chamber and improve stability during substrate heating.

1 is a perspective view of a substrate heating device according to a first embodiment. 1 is a cross-sectional view of a substrate heating device according to a first embodiment. FIG. 2 is a plan view of the heater unit according to the first embodiment. FIG. 2 is a plan view of the infrared heater according to the first embodiment. FIG. 4 is a perspective view showing a supporting state of a plurality of heat shield plates according to the first embodiment. FIG. 11 is a plan view showing an example of the configuration of a heat shield according to a second embodiment. FIG. 7 is a cross-sectional view taken along line VII-VII of FIG. FIG. 11 is a plan view showing a through hole of a heat shield according to a second embodiment. 13A and 13B are diagrams illustrating an example of a center retaining part according to a second embodiment. 13A and 13B are diagrams illustrating an example of a peripheral holding portion according to a second embodiment. 13 is a plan view showing another example of the configuration of the heat shield according to the second embodiment. FIG. This is a cross-sectional view of XII-XII in Figure 11. FIG. 11 is a plan view showing an adhesion prevention plate according to a third embodiment. FIG. 11 is a cross-sectional view of a substrate heating device according to a fourth embodiment. FIG. 13 is a cross-sectional view of a substrate heating apparatus according to a fifth embodiment. 13A and 13B are diagrams illustrating a holding portion according to a first modified example of the embodiment. FIG. 11 is a cross-sectional view showing the configuration of a heat shield according to a second modified example of the embodiment. 5A to 5C are diagrams for explaining the effect of the heat shield plate according to the first embodiment. 13A and 13B are diagrams for explaining the effect of the heat shield plate according to the second embodiment. FIG. 11 is an explanatory diagram of processing conditions when heating a substrate according to a third embodiment. FIG. 13 is a cross-sectional view of a substrate heating device according to a comparative example of the third embodiment. FIG. 11 is a cross-sectional view of the substrate heating device according to the third embodiment of the present invention.

Below, an embodiment of the present invention will be described with reference to the drawings. In the following description, an XYZ Cartesian coordinate system is set, and the positional relationship of each component will be described with reference to this XYZ Cartesian coordinate system. A specific direction in a horizontal plane is the X direction, a direction perpendicular to the X direction in the horizontal plane is the Y direction, and a direction perpendicular to both the X direction and the Y direction (i.e., the vertical direction) is the Z direction.

First Embodiment
<Substrate heating device>
FIG. 1 is a perspective view of a substrate heating device 1 according to a first embodiment.
1, the substrate heating apparatus 1 includes a chamber 2, a pressure adjustment section 3, a gas supply section 4, a heater unit 6 (substrate heating section), a block body 7, a temperature detection section 9, a pressure detection section 14, a gas liquefaction and recovery section 11, a cooling section 17 (see FIG. 2), a heat shield section 30, a shield section 40, a shield support section 50, and a control section 15. The control section 15 controls the components of the substrate heating apparatus 1.
In FIG. 1, the chamber 2 is indicated by a two-dot chain line.

<Chamber>
An accommodation space 2S capable of accommodating a substrate 10 is formed inside the chamber 2. The substrate 10 and the heater unit 6 are accommodated in the common chamber 2. The chamber 2 is formed in the shape of a rectangular parallelepiped box.

As shown in FIG. 2, the chamber 2 has a divided structure that can be separated into upper and lower parts. The chamber 2 includes an upper structure 21 formed in a box shape that opens downward, a lower structure 22 formed in a box shape that opens upward, and a connecting part 23 that connects the upper structure 21 and the lower structure 22 in a separable manner.

The upper structure 21 includes a rectangular top plate 25 and a rectangular frame-shaped upper peripheral wall 26 connected to the outer periphery of the top plate 25 .
The lower structure 22 includes a rectangular bottom plate 27 facing the top plate 25, and a rectangular frame-shaped lower peripheral wall 28 connected to the outer periphery of the bottom plate 27. The lower peripheral wall 28 is provided with a gate 29 for supplying an inert gas into the chamber 2.

For example, when the upper structure 21 and the lower structure 22 are disconnected and the upper structure 21 is separated, the lower structure 22 opens upward. With the lower structure 22 open upward, the substrate 10 can be loaded and unloaded. By loading the substrate 10 into the lower structure 22 and then connecting the upper structure 21 and the lower structure 22, the substrate 10 can be contained in an enclosed space. For example, by connecting the upper structure 21 and the lower structure 22 without any gaps via a sealing member or the like, the airtightness inside the chamber 2 can be improved.

<Pressure adjustment section>
The pressure adjustment unit 3 can adjust the pressure inside the chamber 2. As shown in FIG. 1, the pressure adjustment unit 3 includes a vacuum pipe 3a connected to the chamber 2. The vacuum pipe 3a is a cylindrical pipe extending in the Z direction. For example, a plurality of vacuum pipes 3a are arranged at intervals in the X direction. FIG. 1 shows only one vacuum pipe 3a. Note that the number of vacuum pipes 3a is not limited. The vacuum pipe 3a only needs to be connected to the chamber 2, and the connection portion of the vacuum pipe 3a is not limited. In the example of FIG. 2, a vacuum line is provided on the bottom plate 27 of the chamber 2 (arrow Vacuum in FIG. 2).

For example, the pressure adjustment unit 3 includes a pressure adjustment mechanism such as a pump mechanism. The pressure adjustment mechanism includes a vacuum pump 13. The vacuum pump 13 is connected to a line extending from the portion (lower end) of the vacuum piping 3a opposite to the portion (upper end) connected to the chamber 2.

The pressure adjusting unit 3 can adjust the pressure of the atmosphere in the accommodation space 2S of the substrate 10 to which a solution for forming a polyimide film (polyimide) (hereinafter referred to as "polyimide forming liquid") is applied. For example, the polyimide forming liquid contains polyamic acid or polyimide powder. The polyimide forming liquid is applied only to the first surface 10a (upper surface) of the substrate 10 having a rectangular plate shape.
The material to be applied to the substrate 10 (material to be treated) is not limited to the polyimide forming liquid, but may be anything that forms a predetermined film on the substrate 10 .

The pressure adjusting unit 3 is capable of adjusting the pressure of the atmosphere in the accommodation space 2S, but a mechanism for supplying an inert gas such as nitrogen ( _N2 ), helium (He), argon (Ar) or the like to the accommodation space 2S (hereinafter also referred to as an "inert gas supply mechanism") may be provided separately in the pressure adjusting unit 3. This allows the accommodation space 2S to be adjusted to a desired pressure condition.
Further, like the gas supply unit 4 described later, an inert gas supply mechanism may be provided separately from the pressure adjustment unit 3 .

<Gas supply unit>
The gas supply unit 4 can adjust the state of the atmosphere inside the chamber 2. The gas supply unit 4 includes a gas supply pipe 4a connected to the chamber 2. The gas supply pipe 4a is a cylindrical pipe extending in the Z direction. For example, a plurality of gas supply pipes 4a are arranged at intervals in the X direction. Only one gas supply pipe 4a is shown in FIG. 1. The number of gas supply pipes 4a to be installed is not limited. The vacuum pipe 3a only needs to be connected to the chamber 2, and the connection portion of the gas supply pipe 4a is not limited.

The gas supply unit 4 can adjust the state of the accommodation space 2S by supplying an inert gas to the accommodation space 2S. The gas supply unit 4 supplies an inert gas such as nitrogen ( _N2 ), helium (He), or argon (Ar) into the chamber 2. In the example of Fig. 2, two _N2 supply units are provided on each of the top plate 25 and the lower peripheral wall 28 of the chamber 2 (arrows N2 in Fig. ₂ ). The gas supply unit 4 may supply gas when the temperature of the substrate is lowered, and the gas may be used for cooling the substrate.

The gas supply unit 4 can adjust the state of the storage space 2S by supplying clean dry air (CDA). In the example of FIG. 2, two CDA supply units are provided on each of the top plate 25 and bottom plate 27 of the chamber (arrows CDA in FIG. 2). For example, the gas supply unit 4 may include a dust filter for removing fine dust particles from the gas passing through the gas supply pipe 4a, and a mist filter for removing moisture.

The gas supply unit 4 can adjust the oxygen concentration in the atmosphere inside the chamber 2. The lower the oxygen concentration (by mass) in the atmosphere inside the chamber 2, the more preferable it is. Specifically, the oxygen concentration in the atmosphere inside the chamber 2 is preferably 100 ppm or less, and more preferably 20 ppm or less.
For example, by setting the oxygen concentration in the atmosphere during hardening of the polyimide forming liquid applied to the substrate 10 to a value equal to or lower than the preferred upper limit, hardening of the polyimide forming liquid can be facilitated.
In addition, the arrow EXH in FIG. 2 indicates an exhaust line provided in the lower peripheral wall 28 for discharging gas within the chamber 2 to the outside of the chamber 2 .

<Heater unit>
As shown in Fig. 1, the heater unit 6 is disposed at an upper portion within the chamber 2. As shown in Fig. 2, the heater unit 6 is supported by a top plate 25. A support member 19 that supports the heater unit 6 is provided between the heater unit 6 and the top plate 25. The heater unit 6 is fixed at a fixed position near the top plate 25 within the chamber 2. An infrared heater 140 of the heater unit 6 is suspended from the top plate 25 by the support member 19.

Fig. 3 is a plan view of the heater unit 6 according to the first embodiment. Fig. 4 is a plan view of the infrared heater 140 according to the first embodiment.
3, the heater unit 6 includes a plurality of (for example, 20 in this embodiment) infrared heaters 140. The plurality of infrared heaters 140 can be individually controlled. The control unit 15 (see FIG. 1) can individually control the plurality of infrared heaters 140.

As shown in FIG. 1, the infrared heater 140 can heat the substrate 10 with infrared rays. The infrared heater 140 can heat the substrate 10 in stages. For example, the heating temperature range of the substrate 10 is 200°C or more and 600°C or less. The infrared heater 140 is disposed on the first surface 10a (one surface) side of the substrate 10. The infrared heater 140 is disposed on the top plate 25 side of the chamber 2.

For example, the peak wavelength range of the infrared heater 140 is in the range of 1.5 μm to 4 μm. Note that the peak wavelength range of the infrared heater 140 is not limited to the above range and can be set to various ranges depending on the required specifications.

As shown in FIG. 4, the infrared heater 140 is tubular and bent at multiple points. The outer shape of the infrared heater 140 is rectangular in plan view. For example, the length of each side of the infrared heater 140 is about 250 mm. For example, the infrared heater 140 is formed of a quartz tube.

The infrared heater 140 includes a group of straight sections 141, a group of bend sections 142, a first cover section 143, a second cover section 144, a first introduction section 145, and a second introduction section 146.

The straight portion group 141 includes a plurality of straight portions 141a to 141i (for example, nine in this embodiment). The straight portions 141a to 141i are straight tubular with a longitudinal direction in the first direction V1. The straight portions 141a to 141i are arranged in a line in a second direction V2 that is perpendicular to (intersects) the first direction V1. The straight portions 141a to 141i are arranged at substantially the same intervals U1 (pitch between the central axes) in the second direction V2. The straight portions 141a, 141b, 141c, 141d, 141e, 141f, 141g, 141h, and 141i are arranged in this order from one side to the other side of the second direction V2.

The bend group 142 includes a plurality of bends 142a to 142h (e.g., eight in this embodiment). The bends 142a to 142h are bent so as to convex outward. The bends 142a to 142h connect the ends of two adjacent straight sections 141a to 141i. For example, the bend 142a connects one end of the straight section 141a to one end of the straight section 141b. That is, the bends 142a to 142h are bent so as to connect the ends of two adjacent straight sections 141a to 141i of the infrared heater 140. In a plan view, the bends 142a to 142h are U-shaped tubes that convex outward. The bends 142a, 142b, 142c, 142d, 142e, 142f, 142g, and 142h are arranged in this order from one side to the other side of the second direction V2.

The first cover portion 143 and the second cover portion 144 extend linearly in the second direction V2 so as to cover the multiple bent portions 142a to 142h from the outside.
The first cover portion 143 covers the four bent portions 142b, 142d, 142f, and 142h from one side in the first direction V1.
The second cover portion 144 covers the four bent portions 142a, 142c, 142e, and 142g from the other side in the first direction V1.

The first cover portion 143 is connected to one end of the straight portion 141a on one side in the second direction V2. The first cover portion 143 is a straight tube having a longitudinal direction in the second direction V2. The distance U2 (pitch between the central axes) between the first cover portion 143 and the bent portions 142b, 142d, 142f, 142h is substantially the same as the distance U1 between two adjacent straight portions 141a to 141i.

The second cover portion 144 is connected to one end of the straight portion 141i on the other side in the second direction V2. The second cover portion 144 is L-shaped. That is, the second cover portion 144 has a cover body 144a having a longitudinal direction in the second direction V2, and an extension portion 144b connected to one end of the cover body 144a and having a longitudinal direction in the first direction V1. The interval U3 (pitch between the central axes) between the second cover portion 144 and the bend portions 142a, 142c, 142e, 142g is substantially the same size as the interval U1 between two adjacent straight portions 141a to 141i.

The first introduction section 145 is provided at one end of the infrared heater 140. The first introduction section 145 is disposed on one side of one side of the infrared heater 140. Specifically, the first introduction section 145 is provided at one end of the first cover section 143. A portion of the first introduction section 145 is within the outer shape of the infrared heater 140 in a plan view.

The second introduction part 146 is provided at the other end of the infrared heater 140. The second introduction part 146 is arranged on the other side of one side of the infrared heater 140. The second introduction part 146 is arranged on the opposite side to the first introduction part 145 in the second direction V2. Specifically, the second introduction part 146 is provided at one end of the extension part 144b of the second cover part 144. A part of the second introduction part 146 extends within the outer shape of the infrared heater 140 in a plan view.

As shown in FIG. 3, the heater unit 6 is configured by distributing a plurality of infrared heaters 140 (for example, 20 in this embodiment).
The heater unit 6 includes a pair of first infrared heater groups 140A and a pair of second infrared heater groups 140B. The first infrared heater groups 140A and the second infrared heater groups 140B are alternately arranged in the second direction V2.

The first infrared heater group 140A includes multiple (for example, five in this embodiment) first infrared heaters 140a1-140a5. The pair of first infrared heater groups 140A includes a total of ten first infrared heaters 140a1-140a5. The multiple first infrared heaters 140a1-140a5 are arranged in a spread-out manner in the first direction V1 (one direction). The first infrared heaters 140a1, 140a2, 140a3, 140a4, and 140a5 are arranged in this order from one side to the other side of the first direction V1.

The second infrared heater group 140B includes multiple (for example, five in this embodiment) second infrared heaters 140b1 to 140b5. The pair of second infrared heater groups 140B includes a total of 10 second infrared heaters 140b1 to 140b5. The multiple second infrared heaters 140b1 to 140b5 are arranged in a spread-out manner in the first direction V1. The second infrared heaters 140b1, 140b2, 140b3, 140b4, and 140b5 are arranged in this order from one side to the other side in a direction parallel to the first direction V1.

The second infrared heaters 140b1-140b5 have the same shape as the first infrared heaters 140a1-140a5 in a plan view. The second infrared heaters 140b1-140b5 have a shape that is inverted (rotated 180 degrees) from the first infrared heaters 140a1-140a5 in a plan view. Specifically, the second infrared heaters 140b1-140b5 have a shape that is rotated 180 degrees rightward (clockwise) from the center of the first infrared heaters 140a1-140a5 in a plan view.

<Block letters>
As shown in Fig. 1, the block body 7 is disposed at the lower part within the chamber 2. The block body 7 is a block-shaped component that can be fixed to the inner surface of the chamber 2. The block body 7 is disposed on the side of the second surface 10b (lower surface) opposite to the first surface 10a of the substrate 10. As shown in Fig. 2, the block body 7 is disposed on the side of the bottom plate 27 of the chamber 2. The block body 7 has a rectangular plate shape. The block body 7 is provided with support pins 8 that support the substrate 10 from below.

The support pins 8 are capable of supporting the second surface 10b of the substrate 10. The support pins 8 are rod-shaped members extending vertically. The tips (upper ends) of the support pins 8 abut against the second surface 10b of the substrate 10. A plurality of support pins 8 are provided at intervals in directions parallel to the second surface 10b (X direction and Y direction). Each of the support pins 8 is formed to be approximately the same length. The tips of the support pins 8 are arranged in a plane parallel to the second surface 10b (XY plane).

<Temperature detection unit>
The temperature detection unit 9 is disposed in the accommodation space 2S. The temperature detection unit 9 is capable of detecting the temperature of the substrate 10. For example, the temperature detection unit 9 is a thermocouple. The temperature detection unit 9 is attached to the support pin 8. The temperature detection unit 9 extends substantially in the horizontal direction. The tip of the temperature detection unit 9 faces the second surface 10b of the substrate 10.

The tip of the temperature detection unit 9 is disposed between the substrate 10 and the block body 7. The position of the tip of the temperature detection unit 9 is closer to the substrate 10 than the block body 7. The tip of the temperature detection unit 9 is in close proximity to the second surface 10b of the substrate 10. The separation distance between the tip of the temperature detection unit 9 and the second surface 10b of the substrate 10 is substantially the same for each of the multiple temperature detection units 9.

The temperature detection units 9 are arranged at intervals in both the X and Y directions. In this embodiment, a total of nine temperature detection units 9 are arranged in three rows and three columns (i.e., three in the X direction and three in the Y direction). Figure 2 shows three temperature detection units 9 arranged at intervals in the X direction. The temperature detection units 9 are arranged for each of a number of zones (e.g., nine) set on the substrate 10. The tips of the temperature detection units 9 function as sensors that detect the temperature of each zone of the substrate 10.

The number of temperature detection units 9 is not limited to nine. The number of temperature detection units 9 can be set to any number. For example, it is preferable that the multiple temperature detection units 9 are disposed at positions corresponding to the respective zones of the substrate 10.
Furthermore, the temperature detection unit 9 is not limited to a thermocouple. For example, the temperature detection unit 9 may be a non-contact temperature sensor such as a radiation thermometer. For example, the temperature detection unit 9 is not limited to a non-contact temperature sensor, and may be a contact temperature sensor.

<Pressure detection unit>
The pressure detection unit 14 (see FIG. 1) is capable of detecting the pressure in the accommodation space 2S (hereinafter also referred to as "chamber pressure"). For example, a main body (sensor) of the pressure detection unit 14 is disposed inside the chamber 2. For example, a display unit (pressure indicator) of the pressure detection unit 14 is disposed outside the chamber 2. For example, the pressure detection unit 14 is a digital pressure sensor. Note that while only one pressure detection unit 14 is illustrated in FIG. 1, the number of pressure detection units 14 is not limited to one and may be multiple.

<Gas liquefaction recovery section>
1, the gas liquefaction and recovery unit 11 is connected to a line of the pressure adjustment unit 3 (vacuum pump 13). The gas liquefaction and recovery unit 11 is disposed downstream of the vacuum pump 13 in the line of the pressure adjustment unit 3. The gas liquefaction and recovery unit 11 is capable of liquefying the gas passing through the vacuum pipe 3a and recovering the solvent volatilized from the polyimide forming liquid applied to the substrate 10.

If the gas liquefaction and recovery unit 11 is located upstream of the vacuum pump 13 in the line of the pressure adjustment unit 3, the liquid liquefied upstream may be vaporized at the next pressure reduction, which may delay the evacuation time. In contrast, according to this embodiment, the gas liquefaction and recovery unit 11 is located downstream of the vacuum pump 13 in the line of the pressure adjustment unit 3, so that the liquid liquefied downstream will not be vaporized at the next pressure reduction, and it is possible to avoid delays in the evacuation time.

<Cooling section>
The cooling section 17 is capable of cooling the chamber 2. As shown in Fig. 2, the cooling section 17 is disposed inside a component of the chamber 2, and includes a refrigerant passing section 18 that allows a refrigerant to pass through. For example, the refrigerant is a liquid such as water. The refrigerant flows through the refrigerant passing section 18 by a pump (not shown). Although not shown, the refrigerant passing section 18 is provided with a supply port and a discharge port for the refrigerant. Note that the refrigerant is not limited to a liquid such as water. For example, the refrigerant may be a gas such as air.

A plurality of coolant passages 18 are provided in the chamber 2. In the example of Fig. 2, a coolant passage 18 is provided in each of the top plate 25, the bottom plate 27, and the lower peripheral wall 28 (gate 29) of the chamber 2. This makes it possible to keep the temperatures of the top plate 25, the bottom plate 27, and the lower peripheral wall 28 (gate 29) of the chamber 2 constant.
The coolant passage 18 may be provided in all the walls of the chamber 2 .

<Heat shielding section>
As shown in FIG. 2, the heat shield 30 is disposed between the inner surface of the chamber 2 and the heater unit 6. The heat shield 30 is provided around the substrate 10 on which the polyimide forming liquid is applied. The heat shield 30 includes a plurality of heat shield plates 31. The heat shield 30 is a structure in which a plurality of heat shield plates 31 are disposed at intervals in the thickness direction. For example, the intervals between the plurality of heat shield plates 31 are set to a value that allows for the thermal expansion of each heat shield plate 31. In this embodiment, the heat shield 30 includes three heat shield plates 31. The heat shield plates 31 are capable of absorbing infrared rays. For example, the heat shield plates 31 are formed of a metal such as stainless steel (SUS).

The three heat shield plates 31 each have approximately the same thickness. Each heat shield plate 31 has a uniform thickness overall. The heat shield plate 31 has a thickness of 1 mm or less. For example, the thickness of the heat shield plate 31 is 0.3 mm or more and 1 mm or less.

From the viewpoint of reducing the thermal capacity of the heat shield 31, it is preferable that the thickness of the heat shield 31 is 0.5 mm or less, and more preferably 0.3 mm or less. The lower limit of the thickness of the heat shield 31 is not limited to the above, and may be set within a range that ensures the strength and rigidity of the heat shield 31.

A plurality of heat shields 30 are provided in the chamber 2. In the example shown in FIG. 2, the heat shields 30 are provided so as to face the top plate 25, upper peripheral wall 26, bottom plate 27 (block body 7), and lower peripheral wall 28 (gate 29) of the chamber 2. This makes it possible to prevent infrared rays from the heater unit 6 from being directly irradiated onto the top plate 25, upper peripheral wall 26, bottom plate 27, and lower peripheral wall 28 (gate 29) of the chamber 2.

Although not shown, the heat shield 30 facing the top plate 25 of the chamber 2 has a through hole formed in the portion overlapping the support member 19. On the other hand, the heat shield 30 facing the bottom plate 27 (block body 7) has a through hole formed in the portion overlapping the support pin 8.

The three heat shields 31 are spaced apart in the infrared radiation direction V1. The three heat shields 31 facing the top plate 25 and bottom plate 27 of the chamber 2 are spaced apart and substantially parallel to the infrared radiation direction V1. The three heat shields 31 facing the upper peripheral wall 26 and lower peripheral wall 28 of the chamber 2 are spaced apart horizontally and substantially perpendicular to the infrared radiation direction V1.

Hereinafter, of the three heat shields 31, the one closest to the substrate 10 will be referred to as the "first heat shield 31A", the one closest to the inner surface of the chamber 2 will be referred to as the "second heat shield 31B", and the one between the first heat shield 31A and the second heat shield 31B will be referred to as the "third heat shield 31C" (see Figure 5).

The first heat shield 31A is disposed at a distance from the substrate 10, the shielding portion 40, etc. For example, the distance between the first heat shield 31A and the shielding portion 40 is set to a size that can accommodate thermal expansion of the first heat shield 31A and the shielding portion 40.

The surface 31f1 of the first heat shield 31A facing the substrate 10 (hereinafter also referred to as the "inner surface 31f1") is the surface of the three heat shields 31 closest to the substrate 10. The inner surface 31f1 of the first heat shield 31A has a higher infrared absorption rate than a mirror surface. The inner surface 31f1 of the first heat shield 31A is black. For example, the inner surface 31f1 of the first heat shield 31A is a stainless steel plate (SUS plate) whose surface has been blackened by anodizing coating treatment. However, the inner surface 31f1 of the first heat shield 31A may be blackened with black paint, carbon black, diamond-like carbon (DLC), or the like, without being limited thereto.

The second heat shield 31B is disposed at a distance from the inner surface of the chamber 2. For example, the distance between the inner surface of the chamber 2 and the second heat shield 31B is set to a size that can accommodate thermal expansion of the inner surface of the chamber 2 and the second heat shield 31B.

The surface 31f2 of the second heat shield 31B facing the inner surface of the chamber 2 (hereinafter also referred to as the "outer surface 31f2") is the surface of the three heat shields 31 that is closest to the inner surface of the chamber 2. The outer surface 31f2 of the second heat shield 31B is a mirror surface. The outer surface 31f2 of the second heat shield 31B is mirror-finished. Specifically, the surface roughness of the outer surface 31f2 of the second heat shield 31B is approximately 0.1 μm in Ra and 1.2 μm in Rz.

As shown in FIG. 5, the heat shield 30 is fixed at a fixed position on the inner surface of the chamber 2 by a connecting portion 70. The connecting portion 70 includes connecting members 71, 72 (a first connecting member 71 and a second connecting member 72) such as bolts. The multiple heat shield plates 31 that make up the heat shield 30 are supported by the connecting portion 70 with a predetermined distance between them.

The example in FIG. 5 shows the support state of three heat shield plates 31 facing the lower peripheral wall 28 of the chamber 2. For example, the three heat shield plates 31 are supported at intervals from each other by first connecting members 71 such as bolts. For example, the second heat shield plate 31B is supported at intervals from the inner surface of the chamber 2 by second connecting members 72 such as bolts.

<Shielding part>
The shielding portion 40 is provided between the substrate 10 and the heater unit 6. The shielding portion 40 is arranged so as to cover the substrate 10 from above. The shielding portion 40 is a rectangular shielding plate that transmits infrared rays and blocks sublimates generated when the substrate is heated. The shielding portion 40 is arranged horizontally so as to be approximately perpendicular to the irradiation direction J1 of the infrared rays. For example, the shielding portion 40 is made of quartz glass. Note that the shielding portion 40 is not limited to quartz glass and can be made of various materials according to the required specifications.

<Shielding support part>
The shielding support part 50 is provided between the substrate 10 and the heater unit 6. The shielding support part 50 includes a plurality of shielding supports 51, 52 that support the shielding part 40. The plurality of shielding supports 51, 52 are each common to both.

The shielding supports 51 and 52 extend so as to intersect with the infrared irradiation direction J1. The shielding supports 51 and 52 extend substantially perpendicular to the infrared irradiation direction J1 and substantially parallel to each of the two sides at the X-direction end of the shielding section 40. The shielding supports 51 and 52 extend linearly in the Y direction. The shielding supports 51 and 52 have a cylindrical shape. Note that the shape of the shielding supports 51 and 52 is not limited to a cylindrical shape, and may be another shape such as a rectangular plate shape.

As shown in FIG. 2, the shielding section 40 is supported by a plurality of shielding supports 51, 52. The plurality of shielding supports 51, 52 are a first shielding support 51 provided at one end of the shielding section 40 (a first side in the X direction) and a second shielding support 52 provided at the other end of the shielding section 40 (a second side opposite the first side in the X direction).

The first and second shielding supports 51 and 52 are supported at both ends on the Y-direction side surfaces of the lower peripheral wall 28. The first and second shielding supports 51 and 52 are provided at approximately the same height. In this embodiment, the shielding section 40 is supported by only two supports, the first and second shielding supports 51 and 52. The distance (distance in the X-direction) between the first and second shielding supports 51 and 52 is greater than the longitudinal length of the substrate 10.

<Action and effect>
As described above, according to this embodiment, the substrate heating device 1 includes a chamber 2 having a storage space 2S formed therein capable of accommodating a substrate 10, a heater unit 6 that is disposed in the storage space 2S and is capable of heating the substrate 10 with infrared rays, and a heat shield 31 that is disposed between the inner surface of the chamber 2 and the heater unit 6, absorbs infrared rays, and has a thickness of 1 mm or less.
According to this configuration, by including the heat shield 31 provided between the inner surface of the chamber 2 and the heater unit 6, infrared rays directed toward the inner surface of the chamber 2 can be blocked by the heat shield 31. Since the infrared rays directed toward the inner surface of the chamber 2 are absorbed by the heat shield 31, the infrared rays are not directly irradiated onto the inner surface of the chamber 2. Therefore, it is possible to suppress deformation or deterioration of the chamber 2 due to heating. In addition, it is possible to suppress changes in the infrared reflectance of the inner surface of the chamber 2 due to discoloration of the chamber 2. Therefore, it is possible to suppress deformation or deterioration of the chamber 2 and improve stability during substrate heating.
In addition, since the thickness of the heat shield plate 31 is 1 mm or less, the heat capacity of the heat shield plate 31 can be reduced compared to a case where the thickness of the heat shield plate 31 exceeds 1 mm. Therefore, the heat shield plate 31 is thermally saturated quickly and the heat is easily uniformed. In addition, the heat shield plate 31 is easily cooled, which provides excellent maintainability. Furthermore, this contributes to making the heat shield plate 31 thinner and lighter.

In this embodiment, the heat shield 31 is provided around the periphery of the substrate 10 to which the solution is applied, and thus provides the following effects.
Since the fumes traveling from the substrate 10 toward the inner surface of the chamber 2 can be blocked by the heat shield 31, it is possible to suppress adhesion of sublimates to the inner surface of the chamber 2. Therefore, it is possible to suppress a change in the infrared reflectance of the inner surface of the chamber 2 due to the adhesion of sublimates. Therefore, it is possible to improve the stability during heating of the substrate.

In this embodiment, the heat shielding plates 31 are provided at intervals in the irradiation direction J1 of the infrared rays, thereby achieving the following effects.
Since the multiple heat shields 31 can gradually reduce the heat directed toward the inner surface of the chamber 2, deformation or deterioration of the chamber 2 due to heating can be more effectively prevented.

In this embodiment, the surface 31f1 of the plurality of heat shields 31 closest to the substrate 10 has a higher infrared ray absorption rate than a mirror surface, thereby achieving the following effects.
This can promote the heating of the heat shield 31 by absorbing infrared rays. This can prevent fumes traveling from the substrate 10 toward the inner surface of the chamber 2 from being cooled on the surface of the heat shield 31 and becoming sublimates. This can therefore prevent the adhesion of sublimates to the heat shield 31.

In this embodiment, the surface 31f1 of each of the heat shields 31 closest to the substrate 10 is black, which provides the following effects.
Since the infrared rays are effectively absorbed by the heat shielding plate 31, it is possible to more effectively promote heating of the heat shielding plate 31. Therefore, it is possible to more effectively suppress adhesion of sublimates to the heat shielding plate 31.

In this embodiment, the surface 31f2 of the plurality of heat shields 31 that is closest to the inner surface of the chamber 2 is a mirror surface, which provides the following effects.
Infrared rays can be reflected by surface 31f2 of the plurality of heat shields 31 that is closest to the inner surface of the chamber 2. This can improve the temperature uniformity in the chamber 2 compared to a case in which surface 31f2 of the plurality of heat shields 31 that is closest to the inner surface of the chamber 2 is black. Furthermore, since the mirror surface reduces the emissivity, the transfer of heat to the chamber 2 is suppressed by re-radiation from the heat shields 31, and the effect of suppressing the temperature rise in the chamber 2 can be improved.

In this embodiment, the heat shield 31 is made of metal, which provides the following effects.
Compared to when the heat shield 31 is made of glass, heat saturation occurs more quickly and the heat is more likely to become uniform.

In this embodiment, the chamber 2 includes a top plate 25 located above the substrate 10, a bottom plate 27 located below the substrate 10 and facing the top plate 25, and peripheral walls 26, 28 that surround the periphery of the substrate 10, and the heat shield 31 is provided on each of the top plate 25, the bottom plate 27 and the peripheral walls 26, 28, thereby achieving the following effects.
Since the heat shield 31 can block fumes traveling from the substrate 10 toward the top plate 25, bottom plate 27, and peripheral walls 26, 28 of the chamber 2, adhesion of sublimates to the top plate 25, bottom plate 27, and peripheral walls 26, 28 of the chamber 2 can be suppressed.

In this embodiment, the substrate 10 is coated with a solution for forming polyimide, which provides the following effects.
According to this configuration, deformation and deterioration of the chamber 2 can be suppressed during the formation of polyimide, and stability during heating of the substrate can be improved.

Second Embodiment
Next, a second embodiment of the present invention will be described with reference to FIGS.
In the second embodiment, the configuration of the heat shield (the arrangement of the heat shield plate) is particularly different from that of the first embodiment. In Fig. 6 to Fig. 12, the same components as those in the first embodiment are denoted by the same reference numerals, and detailed description thereof will be omitted.
Fig. 6 is a plan view showing an example of the configuration of a heat shield according to the second embodiment. Fig. 6 shows an example of a heat shield installed on the bottom plate side of a chamber (hereinafter also referred to as a "bottom plate side heat shield"). Fig. 6 corresponds to a view of the bottom plate side heat shield seen from above.

The bottom plate side heat shield 230A is provided facing the bottom plate 27 (block body 7). A through hole 235 is formed in the bottom plate side heat shield 230A at a portion overlapping the support pin 8 (see FIG. 8). The bottom plate side heat shield 230A includes a plurality of heat shield plates 231A (hereinafter also referred to as "bottom plate side heat shield plates 231A"). The bottom plate side heat shield 230A is a structure in which a plurality of bottom plate side heat shield plates 231A are overlapping and arranged in staggered steps. The bottom plate side heat shield 230A has a rectangular shape with its length in the X direction as a whole in a plan view.

As shown in FIG. 7, for example, the overlap amount 231W1 (the maximum width of the overlapping portions in a plan view) of the multiple bottom plate side heat shield plates 231A is set to 15 mm or more and 20 mm or less. For example, the step spacing 231W2 of the multiple bottom plate side heat shield plates 231A is set to a size that can tolerate the thermal expansion of each bottom plate side heat shield plate 231A. For example, the step spacing 231W2 is set to about 5 mm. As shown in FIG. 6, in this embodiment, the bottom plate side heat shield portion 230A includes 24 bottom plate side heat shield plates 231A. Each of the 24 bottom plate side heat shield plates 231A has a substantially identical rectangular outer shape.

The bottom plate side heat shield 230A has a three-stage structure consisting of an upper stage, a middle stage, and a lower stage. Hereinafter, the bottom plate side heat shield 230A provided on the upper stage (closest to the substrate 10) will be referred to as the "bottom plate side upper stage heat shield," the lower stage (closest to the bottom plate 27) will be referred to as the "bottom plate side lower stage heat shield," and the middle stage (between the bottom plate side upper stage heat shield and the bottom plate side lower stage heat shield) will be referred to as the "bottom plate side middle stage heat shield."

The bottom plate side upper heat shielding portion 230A1 is provided with four bottom plate side heat shielding plates 231A1 (hereinafter also referred to as "bottom plate side upper heat shielding plates 231A1"). The four bottom plate side upper heat shielding plates 231A1 are provided at the center of the bottom plate side heat shielding portion 230A in the Y direction and are spaced apart in the X direction.

The bottom plate side lower heat shield portion 230A2 includes twelve bottom plate side heat shield plates 231A2 (hereinafter also referred to as "bottom plate side lower heat shield plates 231A2"). The twelve bottom plate side lower heat shield plates 231A2 include four plates provided on the Y direction center side of the bottom plate side heat shield portion 230A and spaced apart in the X direction, four plates provided on the +Y direction side of the bottom plate side heat shield portion 230A and spaced apart in the X direction, and four plates provided on the -Y direction side of the bottom plate side heat shield portion 230A and spaced apart in the X direction.
The X-direction end of the bottom-side lower heat shield plate 231A2 at the center in the Y direction overlaps with the X-direction end of the bottom-side upper heat shield plate 231A1 in a plan view.
The -Y direction end of the bottom plate side lower heat shield plate 231A2 on the +Y direction side overlaps with the +Y direction end of the bottom plate side upper heat shield plate 231A1 in a plan view.
The +Y direction end of the bottom plate side lower heat shield plate 231A2 on the -Y direction side overlaps with the -Y direction end of the bottom plate side upper heat shield plate 231A1 in a plan view.

The bottom plate side middle heat shield portion 230A3 includes eight bottom plate side heat shield plates 231A3 (hereinafter also referred to as "bottom plate side middle heat shield plates 231A3"). The eight bottom plate side middle heat shield plates 231A3 include four plates provided on the +Y direction side of the bottom plate side heat shield portion 230A and spaced apart in the X direction, and four plates provided on the -Y direction side of the bottom plate side heat shield portion 230A and spaced apart in the X direction.
The -Y direction corner of the bottom plate side middle heat shield plate 231A3 on the +Y direction side overlaps with the +Y direction corner of the bottom plate side upper heat shield plate 231A1 in plan view. The X direction end of the bottom plate side middle heat shield plate 231A3 on the +Y direction side overlaps with the X direction end of the bottom plate side lower heat shield plate 231A2 on the +Y direction side in plan view. The -Y direction end of the bottom plate side middle heat shield plate 231A3 on the +Y direction side overlaps with the +Y direction end of the bottom plate side lower heat shield plate 231A2 on the Y direction center side in plan view.
The +Y direction corner of the bottom plate side middle heat shield plate 231A3 on the -Y direction side overlaps with the -Y direction corner of the bottom plate side upper heat shield plate 231A1 in plan view. The X direction end of the bottom plate side middle heat shield plate 231A3 on the -Y direction side overlaps with the X direction end of the bottom plate side lower heat shield plate 231A2 on the -Y direction side in plan view. The +Y direction end of the bottom plate side middle heat shield plate 231A3 on the -Y direction side overlaps with the -Y direction end of the bottom plate side lower heat shield plate 231A2 on the Y direction center side in plan view.

Each bottom-side heat shield plate 231A has a through hole 235 at a portion overlapping with the support pin 8 in a plan view. The through hole 235 has a U-shape in a plan view (see FIG. 8).
Each bottom-side heat shield 231A is held at one point at its center and eight points around it (outer periphery). Hereinafter, the part that holds the center of the bottom-side heat shield 231A is also referred to as the "center holding part," and the part that holds the periphery of the bottom-side heat shield 231A is also referred to as the "periphery holding part."

FIG. 9 is a diagram illustrating an example of a center holding portion according to the second embodiment.
9, the center holding part 280A can perform center positioning of the bottom plate side heat shield plate 231A (fix the center part of the bottom plate side heat shield plate 231A). The center holding part 280A includes a bolt 281, a pair of nuts 282, 283, and a cylindrical spacer 284.

For example, the bolt 281 is a hexagonal socket bolt. The bolt 281 has a head 281a that can be attached to the inner surface of the chamber 2, and a male threaded portion 281b into which nuts 282, 283 can be screwed. For example, the inner surface of the chamber 2 is provided with an attachment bar portion 202a that can be inserted into the hexagonal hole of the head 281a.
For example, the nuts 282 and 283 are flange nuts. The pair of nuts 282 and 283 are screwed onto the male thread portion 281b of the bolt 281 and face each other with the bottom plate side heat shield plate 231A therebetween.
The male threaded portion 281b of the bolt 281 is inserted into the spacer 284. For example, the length of the spacer 284 can be changed depending on the installation location of the bottom plate side heat shield plate 231A.

For example, first, the bolt 281 is fixed to a predetermined surface of the chamber 2. Next, a spacer 284 having a length suitable for the installation location of the bottom plate side heat shield 231A is inserted into the male threaded portion 281b of the bolt 281. Next, one nut 282 is screwed onto the male threaded portion 281b of the bolt 281 and abuts against the upper end of the spacer 284. Next, the male threaded portion 281b of the bolt 281 is inserted into the through hole of the bottom plate side heat shield 231A, and the lower surface of the bottom plate side heat shield 231A is abutted against the flange portion of the one nut 282. Next, the other nut 283 is screwed onto the male threaded portion 281b of the bolt 281, and the flange portion of the other nut 283 is abutted against the upper surface of the bottom plate side heat shield 231A. For example, the other nut 283 is tightened with a predetermined torque, and the bottom plate side heat shield 231A is sandwiched between the flanges of the pair of nuts 282, 283. This allows the center of the bottom plate side heat shield 231A to be positioned (the center part of the bottom plate side heat shield 231A to be fixed).

FIG. 10 is a diagram illustrating an example of a peripheral holding portion according to the second embodiment.
10, the peripheral holding portion 280B can support the bottom heat shield plate 231A from below, except for the center thereof. The peripheral holding portion 280B includes a bolt 285, a nut 286, a cylindrical spacer 287, and an annular collar 288.

For example, the bolt 285 is a hexagonal socket bolt. The bolt 285 has a head 285a that can be attached to the inner surface of the chamber 2, and a male threaded portion 285b into which a nut 286 can be screwed. For example, the inner surface of the chamber 2 is provided with an attachment bar portion 202a that can be inserted into the hexagonal hole of the head 285a.
For example, the nut 286 is a flanged nut. The nut 286 is screwed onto the male thread portion 285b of the bolt 285 and faces the collar 288 with the bottom plate side heat shield plate 231A interposed therebetween.
The male threaded portion 285b of the bolt 285 is inserted into the spacer 287. For example, the length of the spacer 287 can be changed depending on the installation location of the bottom plate side heat shield plate 231A.
The male thread portion 285b of the bolt 285 is inserted into the collar 288. For example, the outer shape of the collar 288 is substantially the same as the outer shape of the flange portion of the nut 286.

For example, first, the bolt 285 is fixed to a predetermined surface of the chamber 2. Next, a spacer 287 having a length suitable for the installation location of the bottom plate side heat shield 231A is inserted into the male threaded portion 285b of the bolt 285. Next, the collar 288 is inserted into the male threaded portion 285b of the bolt 285 and abuts against the upper end of the spacer 287. Next, the male threaded portion 285b of the bolt 285 is inserted into the through hole of the bottom plate side heat shield 231A, and the lower surface of the bottom plate side heat shield 231A abuts against the collar 288. Next, the nut 286 is screwed onto the male threaded portion 285b of the bolt 285, and the flange portion of the nut 286 is placed on the upper surface of the bottom plate side heat shield 231A with a gap 286W. This allows the parts of the bottom plate side heat shield 231A other than the center to be supported from below.

For example, the size of the gap 286W is set to about 1 mm. This allows the bottom plate side heat shield 231A, which has a thickness of about 0.3 mm, to escape. Note that the size of the gap 286W is not limited to the above and can be changed depending on the thickness of the bottom plate side heat shield 231A, and it is sufficient to set it to a size that can tolerate the thermal expansion of the bottom plate side heat shield 231A.

Fig. 11 is a plan view showing another example of the configuration of the heat shield according to the second embodiment. Fig. 11 shows an example of a heat shield installed on the top plate side of a chamber (hereinafter also referred to as a "top plate-side heat shield"). Fig. 11 corresponds to a view of the top plate-side heat shield seen from below.
The top plate side heat shield 230B is provided so as to face the top plate 25 of the chamber 2. A through hole 236 is formed in the top plate side heat shield 230B at a portion overlapping the support member 19. The top plate side heat shield 230B includes a plurality of heat shield plates 231B (hereinafter also referred to as "top plate side heat shield plates 231B"). The top plate side heat shield 230B is a structure in which a plurality of top plate side heat shield plates 231B are overlapping and arranged in staggered steps. The top plate side heat shield 230B has a rectangular shape with a longitudinal direction in the X direction as a whole in a plan view.

As shown in FIG. 12, for example, the overlap amount 231W1 (the maximum width of the overlapping portions in a plan view) of the multiple top plate side heat shield plates 231B is set to 15 mm or more and 20 mm or less. For example, the step spacing 231W2 of the multiple top plate side heat shield plates 231B is set to a size that can tolerate the thermal expansion of each top plate side heat shield plate 231B. For example, the step spacing 231W2 is set to about 5 mm. As shown in FIG. 11, in this embodiment, the top plate side heat shield portion 230B includes 15 top plate side heat shield plates 231B. Each of the 15 top plate side heat shield plates 231B has a substantially identical rectangular outer shape.

The top plate-side heat shielding portion 230B has a three-stage structure consisting of an upper stage, a middle stage, and a lower stage. Hereinafter, the top plate-side heat shielding portion 230B provided on the upper stage (closest to the top plate 25) will be referred to as the "top plate-side upper stage heat shielding portion", the lower stage (closest to the substrate 10) will be referred to as the "top plate-side lower stage heat shielding portion", and the middle stage (between the top plate-side upper stage heat shielding portion and the top plate-side lower stage heat shielding portion) will be referred to as the "top plate-side middle stage heat shielding portion".

The top plate side upper heat shielding portion 230B1 has eight top plate side heat shielding plates 231B1 (hereinafter also referred to as "top plate side upper heat shielding plates 231B1"). The eight top plate side upper heat shielding plates 231B1 include two plates provided at the center of the top plate side heat shielding portion 230B in the Y direction and spaced apart in the X direction, three plates provided on the +Y direction side of the top plate side heat shielding portion 230B and spaced apart in the X direction, and three plates provided on the -Y direction side of the top plate side heat shielding portion 230B and spaced apart in the X direction.

The top plate side lower heat shielding portion 230B2 includes three top plate side heat shielding plates 231B2 (hereinafter also referred to as "top plate side lower heat shielding plates 231B2"). The three top plate side lower heat shielding plates 231B2 are provided at the center of the top plate side heat shielding portion 230B in the Y direction and are spaced apart in the X direction.
The X-direction end of the top-plate-side lower heat shield plate 231B2 overlaps with the X-direction end of the top-plate-side upper heat shield plate 231B1 located at the center in the Y direction in a plan view.
The +Y direction end of the top-plate side lower heat shield plate 231B2 overlaps with the -Y direction end of the top-plate side upper heat shield plate 231B1 on the +Y direction side in a plan view.
The -Y direction end of the top-plate side lower heat shield plate 231B2 overlaps with the +Y direction end of the top-plate side upper heat shield plate 231B1 on the -Y direction side in plan view.

The top plate side middle heat shield portion 230B3 includes four top plate side heat shield plates 231B3 (hereinafter also referred to as "top plate side middle heat shield plates 231B3"). The four top plate side middle heat shield plates 231B3 include two plates provided on the +Y direction side of the top plate side heat shield portion 230B and spaced apart in the X direction, and two plates provided on the -Y direction side of the top plate side heat shield portion 230B and spaced apart in the X direction.
The -Y direction corner of the top plate-side middle heat shield plate 231B3 on the +Y direction side overlaps with the +Y direction corner of the top plate-side lower heat shield plate 231B2 in plan view. The X direction end of the top plate-side middle heat shield plate 231B3 on the +Y direction side overlaps with the X direction end of the top plate-side upper heat shield plate 231B1 on the +Y direction side in plan view. The -Y direction end of the top plate-side middle heat shield plate 231B3 on the +Y direction side overlaps with the +Y direction end of the top plate-side upper heat shield plate 231B1 on the Y direction center side in plan view.
The +Y direction corner of the top plate-side middle heat shield plate 231B3 on the -Y direction side overlaps with the -Y direction corner of the top plate-side lower heat shield plate 231B2 in plan view. The X direction end of the top plate-side middle heat shield plate 231B3 on the -Y direction side overlaps with the X direction end of the top plate-side upper heat shield plate 231B1 on the -Y direction side in plan view. The +Y direction end of the top plate-side middle heat shield plate 231B3 on the -Y direction side overlaps with the -Y direction end of the top plate-side upper heat shield plate 231B1 on the Y direction center side in plan view.

Each top-panel-side heat shield plate 231B has a through hole 236 in a portion overlapping with the support member 19 in a plan view. The through hole 236 has a circular shape in a plan view.
Each top-side heat shield plate 231B is held at one point at its center and 12 points around it. The center of each top-side heat shield plate 231B is held by a center holding portion. The periphery of each bottom-side heat shield plate 231B is held by a peripheral holding portion. For example, the holding portion of the top-side heat shield portion 230B may be the same as the holding portions 280A, 280B of the bottom-side heat shield portion 230A described above. Note that the holding portions 280A, 280B are not limited to the bottom-side heat shield plate 231A and the top-side heat shield plate 231B, but can be applied to all heat shield plates.

Fig. 12 is a cross-sectional view taken along line XII-XII of Fig. 11. In Fig. 12, the flow of gas (for example, N ₂ ) is also shown. Arrows _N2 in the drawing indicate the gas flow direction.
As shown in Fig. 12, the plurality of top plate side heat shield plates 231B are arranged horizontally so as to be approximately perpendicular to the gas supply direction (vertically downward) from the top plate 25 (above). For example, gas supplied from above flows downward toward the top plate side upper stage heat shield plate 231B1, and then flows outward along the upper surface of the top plate side upper stage heat shield plate 231B1. The gas then flows outward along the upper surface of the top plate side middle stage heat shield plate 231B3. Then, a part of the gas flows outward along the upper surface of the other top plate side upper stage heat shield plate 231B1. Meanwhile, another part of the gas flows outward along the upper surface of the top plate side lower stage heat shield plate 231B2.

As described above, according to this embodiment, the heat shields 231A (231B) are arranged in a staggered manner so as to overlap each other, thereby achieving the following effects.
Since the inner surface of the chamber 2 is not exposed, it is possible to suppress adhesion of sublimate to the inner surface of the chamber 2. Therefore, it is possible to suppress a change in the infrared reflectance of the inner surface of the chamber 2 due to the adhesion of sublimate, and therefore it is possible to improve the stability during heating of the substrate.

In this embodiment, the central portion of the heat shield 231A (231B) is fixed by the central holding portion 280A. The portion of the heat shield 231A (231B) other than the central portion is supported from only one side in the thickness direction by the peripheral holding portion 280B. The above-mentioned configuration provides the following effects.
This allows for thermal expansion of the heat shield 231A (231B) while determining the center of the heat shield 231A (231B).

Third Embodiment
Next, a third embodiment of the present invention will be described with reference to FIG.
In the third embodiment, the aspect above the bottom plate of the chamber is particularly different from that of the first embodiment. In Fig. 13, the same components as those in the first embodiment are denoted by the same reference numerals, and detailed description thereof will be omitted.

FIG. 13 is a plan view showing an adhesion prevention plate according to the third embodiment.
13, an adhesion prevention plate 389 is provided on the bottom plate 27 of the chamber 2 to prevent the adhesion of sublimate to the inner surface of the chamber 2. The adhesion prevention plate 389 is installed on the upper surface of the bottom plate 27. The adhesion prevention plate 389 has a rectangular shape with its elongated side in the Y direction in a plan view. A plurality of adhesion prevention plates 389 are arranged at intervals in the X direction. For example, the adhesion prevention plate 389 is a SUS plate having a thickness of about 0.1 mm.

As described above, according to this embodiment, the attachment prevention plate 389 is provided on the upper surface of the bottom plate 27, thereby achieving the following effects.
Since the upper surface of the bottom plate 27 is not exposed in the portion where the adhesion prevention plate 389 is installed, it is possible to prevent the adhesion of sublimate to the upper surface of the bottom plate 27. In addition, it is possible to suppress the adhesion of sublimate to the upper surface of the adhesion prevention plate 389.

<Fourth embodiment>
Next, a fourth embodiment of the present invention will be described with reference to FIG.
In the fourth embodiment, the direction of gas flow is particularly different from that in the first embodiment. In Fig. 14, the same components as those in the first embodiment are denoted by the same reference numerals, and detailed description thereof will be omitted.

FIG. 14 is a cross-sectional view of a substrate heating apparatus according to the fourth embodiment.
As shown in Fig. 14, four _N2 supply units are provided on the top plate 25 of the chamber 2 (arrows _N2 in Fig. 14). One vacuum line is provided on the bottom plate 27 of the chamber 2 (arrow Vacuum in Fig. 14). For example, the vacuum line is disposed in the center of the bottom plate 27 of the chamber 2. The heat shield 431 (heat shield 430) is disposed at a distance from the inner surface of the chamber 2. A gas flow path is formed between the inner surface of the chamber 2 and the heat shield 431.

Arrow F1 in FIG. 14 indicates the direction of gas flow passing between the inner surface of chamber 2 and heat shield 431. For example, gas supplied from above flows outward between top plate 25 of chamber 2 and heat shield 431 on the top plate side. The gas then flows downward between peripheral walls 26, 28 of chamber 2 and heat shield 431 on the peripheral wall side. The gas then flows inward between bottom plate 27 of chamber 2 and heat shield 431 on the bottom plate side. The gas then flows to the vacuum line. In this embodiment, gas supplied from above flows along the inner surface of chamber 2 and is then discharged to the outside of chamber 2.

Arrow G1 in FIG. 14 indicates the flow direction of the sublimate when the substrate is heated. For example, the sublimate from the upper surface 10a of the substrate 10 flows outward between the substrate 10 and the shielding portion 40. The sublimate then flows downward between the heat shield plate 431 on the peripheral wall side and the substrate 10. The sublimate then flows inward between the heat shield plate 431 on the bottom plate side and the substrate 10. The sublimate then flows to the vacuum line.

As described above, according to this embodiment, by flowing gas between the inner surface of the chamber 2 and the heat shield plate 431, the following effects are achieved.
Since it is possible to prevent the sublimate from remaining between the inner surface of the chamber 2 and the heat shield plate 431, it is possible to prevent the sublimate from adhering to the inner surface of the chamber 2.

In this embodiment, by flowing gas downward from the top plate 25 side of the chamber 2 while drawing a vacuum, the following effects are achieved.
It is possible to suppress adhesion of sublimate to the top plate 25 of the chamber 2. Therefore, it is not necessary to attach and detach the infrared heater 140 when cleaning, and it is possible to suppress excessive time for maintenance. In addition, by supplying gas from the top plate 25 of the chamber 2 and exhausting it from the bottom plate 27, the effect of the downflow reduces the lifting up of foreign matter, which leads to a reduction in particles inside the chamber 2.

Fifth Embodiment
Next, a fifth embodiment of the present invention will be described with reference to FIG.
In the fifth embodiment, the configuration of the vacuum line is particularly different from that of the fourth embodiment. In Fig. 15, the same reference numerals are used to designate the same components as those in the first and fourth embodiments, and detailed description thereof will be omitted.

FIG. 15 is a cross-sectional view of a substrate heating apparatus according to the fifth embodiment.
As shown in FIG. 15, the sublimate recovery section 590 is provided in the vacuum line. For example, the sublimate recovery section 590 is configured to be detachable from the vacuum line. The sublimate recovery section 590 is disposed upstream of the vacuum pump 13 in the vacuum line. The sublimate recovery section 590 is formed in a box shape capable of recovering the sublimate that has entered the vacuum line. For example, a plurality of fins 591 are provided inside the sublimate recovery section 590. For example, a cooling section 592 capable of cooling the sublimate recovery section 590 is provided outside the sublimate recovery section 590. For example, the cooling section 592 may include a pipe capable of circulating a coolant such as water.

Valve 595 is disposed downstream of sublimate recovery section 590 in the vacuum line. Hereinafter, in the vacuum line, the portion extending downward from the bottom of chamber 2 is referred to as the "first line," and the portion extending laterally from the lower end of the first line is referred to as the "second line." Sublimate recovery section 590 is connected to the first line. Valve 595 is connected to the second line.

As described above, according to this embodiment, the sublimate recovery section 590 is provided on the vacuum line, which provides the following effects.
The sublimate that is about to pass through the vacuum line can be collected by the sublimate collection section 590. Therefore, it is possible to prevent the sublimate from adhering to the portion downstream of the sublimate collection section 590 in the vacuum line.

In this embodiment, the sublimate recovery section 590 is configured to be detachable from the vacuum line, which provides the following effects.
Since cleaning or the like can be performed in a state where the sublimate recovery section 590 is removed from the vacuum line, the maintainability of the sublimate recovery section 590 is improved.

In this embodiment, the sublimate recovery section 590 is provided with a plurality of fins 591 therein, which provides the following effects.
Since the sublimate can be attached to the surfaces of the plurality of fins 591 in addition to the inner surface of the sublimate recovery section 590, the attachment efficiency of the sublimate is improved.

In this embodiment, the cooling section 592 capable of cooling the sublimate recovery section 590 is provided outside the sublimate recovery section 590, thereby achieving the following effects.
Since the sublimate recovery section 590 can be cooled, the adhesion efficiency of the sublimate is improved.

In this embodiment, the valve 595 is disposed downstream of the sublimate recovery section 590 in the vacuum line, which provides the following effects.
Since the sublimate attempting to pass through the vacuum line can be collected by the sublimate collection section 590, adhesion of the sublimate to the valve 595 can be suppressed.

In this embodiment, the sublimate recovery section 590 is connected to the first line. The valve 595 is connected to the second line. The above-mentioned configuration provides the following effects.
If the valve were provided just below the bottom surface of the chamber, there would be a high possibility that the sublimate would adhere to the valve when it is collected through a vacuum line. In contrast, according to this embodiment, the valve 595 is connected to the second line, and thus the valve 595 is far away from just below the bottom surface of the chamber, so that it is possible to more effectively prevent the sublimate from adhering to the valve 595.

<Modification>
The shapes and combinations of the components shown in the above examples are merely examples and can be modified in various ways based on design requirements, etc.
In the above embodiment, the substrate heating section is a heater unit including a plurality of infrared heaters, but is not limited thereto. For example, the substrate heating section may be a single infrared heater.

In the above embodiment, the thickness of the heat shield is 1 mm or less, but is not limited to this. For example, the thickness of the heat shield may be more than 1 mm. For example, the thickness of the heat shield is not limited to the above range, and may be set within a range that can promote heating of the heat shield and suppress adhesion of sublimates to the heat shield. For example, the thickness of the heat shield can be changed according to the required specifications.

In the above embodiment, the heat shield is provided around the substrate to which the solution is applied, but this is not limited thereto. For example, the heat shield may be provided around the substrate to which the solution is not applied. For example, the heat shield may be provided between the inner surface of the chamber and the substrate heating unit.

In the above embodiment, the heat shielding plates are provided at intervals in the direction of infrared radiation, but this is not limited to the above. For example, only one heat shielding plate may be provided in the direction of infrared radiation. For example, the number of heat shielding plates can be changed according to the required specifications.

In the above embodiment, the surface of the multiple heat shields closest to the substrate has a higher infrared absorption rate than the mirror surface, but this is not limited to the above. For example, the surface of the multiple heat shields closest to the substrate may have an infrared absorption rate equal to or lower than that of the mirror surface. For example, the infrared absorption rate of the heat shield can be changed according to the required specifications.

In the above embodiment, the surface of the heat shield closest to the substrate is black, but this is not limited to the color. For example, the color of the heat shield is not limited to black, and various colors can be used depending on the required specifications.

In the above embodiment, the surface of the heat shield closest to the substrate is blackened to increase the infrared absorption rate compared to a mirror surface, but this is not limited to the above. For example, the surface of the heat shield closest to the substrate may be roughened to increase the infrared absorption rate compared to a mirror surface. For example, the surface of the heat shield may be roughened more than the mirror surface by subjecting it to a blast treatment, thereby increasing the surface area and increasing the infrared absorption rate. For example, the surface roughness of the heat shield resulting from the blast treatment may be Ra 0.4 μm to 6.3 μm and Rz 1.6 μm to 25 μm.

In the above embodiment, the surface of the heat shield closest to the inner surface of the chamber is a mirror finish, but this is not limited to this. For example, the surface of the heat shield closest to the inner surface of the chamber may be black. For example, the surface configuration of the heat shield can be changed according to the required specifications.

In the above embodiment, the heat shield is made of metal, but this is not limited to this. For example, the heat shield may be made of glass. For example, the heat shield may be made of various materials depending on the required specifications.

In the above embodiment, the chamber includes a top plate located above the substrate, a bottom plate located below the substrate and facing the top plate, and a peripheral wall surrounding the periphery of the substrate, and the heat shield is provided on each of the top plate, bottom plate, and peripheral wall, but this is not limited to this. For example, the heat shield may be provided only on the peripheral wall. In other words, the heat shield needs to be provided at least partially between the inner surface of the chamber and the substrate heating unit.

In the above embodiment, the heat shield is fixed by fastening, but this is not limited thereto. For example, the heat shield may be fixed by a magnet. For example, the holding portion of the heat shield may include a heat-resistant magnet such as a samarium-cobalt magnet or an alnico magnet. For example, if the holding portion includes a magnet, the heat shield may be a magnetic metal plate such as stainless steel. For example, the heat shield is preferably made of a material with a nickel content of 3% or less, such as SUS400 series.

In the example of FIG. 16, the holding part 680 is a cylindrical samarium-cobalt magnet. The holding part 680 has a first surface 680a and a second surface 680b opposite the first surface 680a. The heat shield 31 is magnetically connected to the first surface 680a of the holding part 680. The second surface 680b of the holding part 680 is magnetically connected to the inner surface of the chamber 2. According to this modification, there is no need to attach or detach bolts or the like when replacing the heat shield 31, improving maintainability during cleaning.

The heat shield may be held by both fastening and magnet fixation. For example, the heat shield may be fixed at its center by fastening, and its periphery by magnets. In other words, the heat shield may be held at its center by a center holder, and its periphery by magnets. For example, the manner in which the heat shield is held can be changed according to the required specifications.

In the above embodiment (example of FIG. 12), the multiple top plate side heat shield plates are arranged at uniform intervals in the gas supply direction, but this is not limited to this. For example, the arrangement of the multiple top plate side heat shield plates can be changed according to the required specifications. For example, as shown in FIG. 17, the multiple top plate side heat shield plates 231B may be arranged in a stepped manner in the gas supply direction. In FIG. 17, the same reference numerals are used for the same configuration as in FIG. 12, and detailed description thereof will be omitted.

In the example of FIG. 17, the multiple tabletop side heat shield plates 231B are arranged in a fan-shaped manner in the order of the tabletop side upper heat shield plate 231B1, the tabletop side middle heat shield plate 231B3, and the tabletop side lower heat shield plate 231B2. For example, gas supplied from above flows downward toward the tabletop side upper heat shield plate 231B1, and then flows outward along the upper surface of the tabletop side upper heat shield plate 231B1. The gas then flows outward along the upper surface of the tabletop side middle heat shield plate 231B3. The gas then flows outward along the upper surface of the tabletop side lower heat shield plate 231B2. According to this modified example, the gas supplied from above flows in a fan-shaped manner in the order of the tabletop side upper heat shield plate 231B1, the tabletop side middle heat shield plate 231B3, and the tabletop side lower heat shield plate 231B2, so that the gas can flow more smoothly.

In the above embodiment (the example of FIG. 15), the substrate heating device includes a heat shield plate, but is not limited to this. For example, the substrate heating device does not need to include a heat shield plate.
For example, a substrate heating device according to one aspect of the present invention may include a chamber having a storage space formed therein capable of accommodating a substrate, a substrate heating unit disposed in the storage space and capable of heating the substrate by infrared rays, and a sublimate recovery unit capable of recovering sublimate produced when the substrate is heated.
According to this configuration, since the sublimate can be collected by the sublimate collection section, adhesion of the sublimate to the inner surface of the chamber can be suppressed. Therefore, it is possible to suppress a change in the infrared reflectance of the inner surface of the chamber due to the adhesion of the sublimate. Therefore, it is possible to improve the stability during heating of the substrate. Furthermore, by suppressing the adhesion of the sublimate to the vacuum valve and the vacuum pump, it is possible to suppress the occurrence of trouble. In addition, by limiting the location where the sublimate adheres, it is possible to improve the ease of maintenance.

The present invention may also be applied to a substrate processing system including the substrate heating device of the above embodiment. For example, the substrate processing system is a system that is incorporated into a manufacturing line in a factory or the like and forms a thin film on a predetermined area of a substrate. Although not shown, for example, the substrate processing system includes a substrate processing unit including the substrate heating device, a substrate loading unit that is a unit to which a loading cassette containing a substrate before processing is supplied and an empty loading cassette is collected, a substrate unloading unit that is a unit to which an unloading cassette containing a substrate after processing is collected and an empty unloading cassette is supplied, a transport unit that transports the loading cassette between the substrate processing unit and the substrate loading unit and transports the unloading cassette between the substrate processing unit and the substrate unloading unit, and a control unit that controls each unit.
According to this configuration, by including the substrate heating device, deformation and deterioration of the chamber can be suppressed in the substrate processing system, and stability during substrate heating can be improved.

The components described above as embodiments or variations thereof may be combined as appropriate without departing from the spirit of the present invention, and some of the multiple combined components may not be used as appropriate.

The present invention will be described in more detail below with reference to examples, but the present invention is not limited to the following examples.

<First embodiment>
The inventors of the present application confirmed through the following evaluation that the temperature rise of the inner surface of the chamber can be suppressed by providing a heat shield between the inner surface of the chamber and the substrate heating section.

(Subject to evaluation)
The evaluation target was the center of the top plate of the chamber located above the substrate. The chamber temperature was measured by measuring the temperature at the center of the top plate of the chamber when a heat treatment was continued for 3 hours at a substrate temperature of 400° C. using a substrate heating device.

Comparative Example
In the comparative example, no heat shield was provided between the inner surface of the chamber and the substrate heating unit, i.e., the substrate heating device of the comparative example did not include a heat shield.

(Example)
In the embodiment, a heat shield plate was provided between the inner surface of the chamber and the substrate heating section.
In Example 1, only one heat shield plate made of glass and having a thickness of 5 mm was used.
In Example 2, only one heat shield plate made of SUS and having a thickness of 1 mm was used.
In Example 3, three SUS heat shield plates having a thickness of 1 mm were used. In Example 3, a structure was formed in which the three heat shield plates were arranged at intervals in the thickness direction (see FIG. 2).

Figure 18 is a diagram for explaining the effect of the heat shield according to the first embodiment. In Figure 18, the horizontal axis indicates time [min], and the vertical axis indicates chamber temperature [°C]. In Figure 18, the two-dot chain line graph indicates the comparative example, the one-dot chain line graph indicates Example 1, the dashed line graph indicates Example 2, and the solid line graph indicates Example 3.

As shown in FIG. 18, it was found that the chamber temperature was lower in the example than in the comparative example during the heat treatment at a substrate temperature of 400° C. for three hours.
The chamber temperatures after heating for 3 hours were 148.1°C for the comparative example, 126.4°C for Example 1, 80.3°C for Example 2, and 63.4°C for Example 3.
It was found that by providing a heat shield made of stainless steel, the rise in chamber temperature could be reduced by about half, and that the suppression effect could be further increased by making the heat shield multi-layered.
From the above, it was found that the temperature rise of the inner surface of the chamber can be suppressed by providing a heat shield between the inner surface of the chamber and the substrate heating section.

Second Example
The inventors of the present application confirmed through the following evaluation that adhesion of sublimates to the heat shield can be more effectively suppressed by coloring the inner surface (the surface facing the substrate) of the heat shield black.

(Subject to evaluation)
The evaluation object was a SUS heat shield (SUS plate) formed in a square shape with sides of 50 mm in plan view and having a thickness of 1 mm. The heat shield was installed below the substrate in the chamber. The heat shield was installed horizontally at a height of 10 mm from the bottom surface of the chamber (the upper surface of the bottom plate). The heat shield temperature was measured by measuring the temperature of the heat shield when the substrate was heated at 400° C. for 20 minutes using a substrate heating device. The heat shield temperature was measured by contacting a thermocouple with the back surface of the heat shield (the surface opposite to the substrate side).

Comparative Example
In the comparative example, the inner surface of the heat shield was mirror-finished. In the comparative example, the surface roughness of the inner surface of the heat shield was set to Ra of 0.02 μm and Rz of 0.15 μm. The surface roughness was measured using a Mitutoyo Surftest SJ-301.

(Example)
In Example 1, a heat shield plate whose inner surface was not mirror-finished (untreated product) was used. An untreated SUS plate was used in Example 1. In Example 1, the surface roughness of the inner surface of the heat shield plate was set to Ra of 0.08 μm and Rz of 1.19 μm.
In Example 2, the inner surface of the heat shield plate was subjected to blasting treatment. In Example 2, the surface roughness of the inner surface of the heat shield plate was set to Ra of 1.19 μm and Rz of 8.32 μm.
In Example 3, the inner surface of the heat shield plate was blackened. In Example 3, the inner surface of the heat shield plate (one surface of an untreated SUS plate) was blackened with a black body spray (model number OP-96929 manufactured by Keyence Corporation).

Figure 19 is a diagram for explaining the effect of the heat shield according to the second embodiment. In Figure 19, the horizontal axis indicates time [min], and the vertical axis indicates the heat shield temperature [°C]. In Figure 19, the two-dot chain line graph indicates the comparative example, the one-dot chain line graph indicates Example 1, the dashed line graph indicates Example 2, and the solid line graph indicates Example 3.

As shown in FIG. 19, it was found that the heat shield temperature was higher in the example than in the comparative example during the heat treatment at a substrate temperature of 400° C. for 20 minutes.
The temperature rise rate in the range of the heat shield temperature from 250° C. to 350° C. was 20.9° C./min for the comparative example, 27.7° C./min for example 1, 45.5° C./min for example 2, and 61.0° C./min for example 3.

It was found that painting the inner surface of the heat shield black (or applying blast treatment) resulted in the highest temperature rise rate and the highest infrared absorption rate.
From the above, it was expected that by painting the inner surface of the heat shield black (or by blasting), adhesion of sublimates to the heat shield can be more effectively suppressed.

<Third embodiment>
The inventors of the present application confirmed through the following evaluation that adhesion of sublimate to the inner surface of the chamber can be suppressed by providing a heat shield between the inner surface of the chamber and the substrate heating unit and flowing gas between the inner surface of the chamber and the heat shield.

(Subject to evaluation)
The evaluation target was the inner surface of the top plate of the chamber located above the substrate.
Fig. 20 is an explanatory diagram of processing conditions during substrate heating according to the third embodiment. In Fig. 20, the horizontal axis indicates time [min], the vertical axis on the left side of the page indicates the oxygen concentration [ppm] in the chamber, and the vertical axis on the right side of the page indicates the degree of vacuum [Pa] in the chamber. In Fig. 20, the solid line graph indicates the oxygen concentration, and the dashed line graph indicates the degree of vacuum.

As shown in FIG. 20, the substrate heating process was carried out in the following manner.
First, the chamber was evacuated until the degree of vacuum in the chamber reached 3 Pa. Next, while maintaining the vacuum, _N2 was supplied into the chamber at a flow rate of 15 L/min, and the chamber was evacuated until the degree of vacuum in the chamber reached 100 Pa. Next, heating of the substrate by infrared rays from the substrate heating unit was started. During heating of the substrate, the supply amount of _N2 was kept constant, and the degree of vacuum in the chamber was maintained at 100 Pa. During heating of the substrate, the oxygen concentration in the chamber was maintained at 1 ppm or less.

Comparative Example
The comparative example used was one in which no heat shield was provided between the inner surface of the chamber and the substrate heating unit, and no shield was provided between the substrate and the substrate heating unit. That is, the substrate heating device of the comparative example was not provided with a heat shield or a shield (see FIG. 21). In FIG. 21, the same components as those in FIG. 14 are given the same reference numerals, and detailed descriptions thereof will be omitted.

(Example)
In the embodiment, a heat shield plate was provided between the inner surface of the chamber and the substrate heating section, and a shield was provided between the substrate and the substrate heating section.
In the first embodiment, no gas is flowed between the inner surface of the chamber and the heat shield (see FIG. 22). In FIG. 22, the same components as those in FIG. 14 are denoted by the same reference numerals, and detailed description thereof will be omitted.
In Example 2, gas was made to flow between the inner surface of the chamber and the heat shield (see FIG. 14). In Example 2, gas was supplied from above, made to flow along the inner surface of the chamber, and then discharged to the outside of the chamber (see FIG. 14).

Although not shown, in the comparative example, adhesion of sublimate material to the inner surface of the top plate was observed.
It was found that in Example 1, the amount of sublimated matter adhering to the inner surface of the top plate was smaller than that in the comparative example.
In Example 2, almost no sublimate was found adhering to the inner surface of the top plate.
From the above, it was found that by providing a heat shield between the inner surface of the chamber and the substrate heating section and flowing gas between the inner surface of the chamber and the heat shield, adhesion of sublimate to the inner surface of the chamber can be suppressed.

1...Substrate heating device 2...Chamber 2S...Storage space 6...Heater unit (substrate heating section) 10...Substrate 25...Top plate 26...Upper peripheral wall (peripheral wall) 27...Bottom plate 28...Lower peripheral wall (peripheral wall) 31...Heat shield 31A...First heat shield (heat shield) 31B...Second heat shield (heat shield) 31C...Third heat shield (heat shield) 31f1...Inner surface of first heat shield (surface of multiple heat shields closest to the substrate) 31f2...Outer surface of second heat shield (surface of multiple heat shields closest to the inner surface of the chamber) J1...Direction of infrared radiation

Claims (9)

A chamber having an accommodation space formed therein capable of accommodating a substrate;
a substrate heating unit that is disposed in the accommodation space and is capable of heating the substrate by infrared rays;
a heat shielding plate provided between an inner surface of the chamber and the substrate heating unit, the heat shielding plate absorbing the infrared rays and having a thickness of 1 mm or less ;
The heat shielding plate is provided in a plurality of plates spaced apart from each other in the irradiation direction of the infrared rays,
The plurality of heat shields are arranged in a staggered manner and overlap each other.
Substrate heating device. The substrate heating apparatus according to claim 1 , wherein the heat shield is provided around the substrate on which the solution is applied. The substrate heating device according to claim 1 , wherein the surface of the plurality of heat shields closest to the substrate has a higher infrared ray absorption rate than a mirror surface. The substrate heating device according to claim 1 , wherein the surface of each of the plurality of heat shields closest to the substrate is black. The substrate heating apparatus according to claim 1 , wherein the surface of the plurality of heat shields that is closest to the inner surface of the chamber is a mirror surface. The substrate heating device according to claim 1 , wherein the heat shield is made of metal. The chamber comprises:
A top plate located above the substrate;
a bottom plate located below the substrate and facing the top plate;
a peripheral wall surrounding the periphery of the substrate;
The substrate heating device according to claim 1 , wherein the heat shielding plate is provided on each of the top plate, the bottom plate and the peripheral wall. The substrate heating device according to claim 1 , wherein the substrate is coated with a solution for forming a polyimide. A substrate processing system comprising the substrate heating apparatus according to claim 1 .

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