JP2008041698A - Processor, and processing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a processor and a processing method capable of reducing a degree to which temperature conditions of a reactive gas or a substrate locally differ, and forming a film with good quality. <P>SOLUTION: The processor 1 includes a reaction chamber 3, a heater 6 and a reflector 10. The heater 6 heats a substrate 4 to be processed using the reactive gas inside the reaction chamber 3. The reflector 10 locally changes a calorific value conducted from the inside to the outside of the reaction chamber 3 when the substrate 4 is heated by the heater 6. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a processing apparatus and a processing method, and more particularly to a processing apparatus and a processing method including a heating member that heats a processing target.

2. Description of the Related Art Conventionally, there is known a processing apparatus that grows a film using a reactive gas as a raw material on a substrate by heating the substrate, which is an object to be processed, while supplying the reactive gas into the reaction chamber. In such a processing apparatus, it is important to uniformly heat the entire substrate in order to make the quality of the film to be formed uniform. Various proposals have heretofore been made in order to uniformly heat the substrate. For example, in order to uniformly heat the substrate, a processing apparatus in which heating members are arranged on both the lower surface and the upper surface of the substrate has been conventionally proposed (see Patent Document 1).
JP-A-8-148480

  In the conventional processing apparatus described above, it seems possible to heat the substrate itself substantially uniformly. However, for the reaction gas supplied to the substrate, the temperature condition of the reaction gas is locally different due to the flow of the reaction gas (for example, located upstream of the substrate in the reaction gas flow direction). The reaction conditions for the reaction gas and the reaction gas located on the downstream side differ depending on the heating member and the heat from the substrate). When the temperature condition of such a reactive gas is locally different, the temperature distribution of the substrate in contact with the reactive gas is also affected, and as a result, the uniformity of the temperature distribution of the substrate may be deteriorated. As a result, problems such as deterioration in the uniformity of the film quality of the film formed on the surface of the substrate may occur. In the conventional processing apparatus, it has been difficult to correct the non-uniformity of the temperature conditions of the reaction gas and the non-uniformity of the film quality resulting therefrom.

  The present invention has been made to solve the above-described problems, and an object of the present invention is to reduce the extent to which the temperature conditions of the reaction gas and the substrate are locally different, and to provide an excellent film quality film. To provide a processing apparatus and a processing method that can be formed.

  The processing apparatus according to the present invention includes a reaction chamber, a heating member, and a thermal resistance changing member. The heating member heats the processing object to be processed using the reaction gas inside the reaction chamber. The heat resistance changing member locally changes the amount of heat conducted from the inside of the reaction chamber to the outside when the object to be processed is heated by the heating member.

  In this way, even if the temperature distribution of the reaction gas becomes non-uniform due to the flow of the reaction gas supplied to the reaction chamber, the amount of heat conducted from the reaction chamber to the outside using the thermal resistance changing member can be reduced. By changing locally, it is possible to control the temperature distribution of the reaction gas and the substrate in contact with it (specifically, it is possible to suppress the temperature distribution of the reaction gas from becoming uneven, and to The desired temperature distribution may be non-uniform). For example, in the vicinity of a region where the temperature of the reaction gas is relatively likely to decrease, the amount of heat conducted to the outside of the reaction chamber by the thermal resistance changing member is made smaller than in other regions. In this way, it is possible to suppress a decrease in the temperature of the reaction gas and the substrate in the region, compared to the case where there is no thermal resistance changing member. As a result, the uniformity of the temperature distribution of the reaction gas and the substrate in contact with the reaction gas can be improved.

  In the processing apparatus, the thermal resistance changing member may include a reflector that changes the traveling direction of the radiant energy flux emitted from the inside of the reaction chamber to the outside.

  In this case, the amount of heat conducted from the inside of the reaction chamber to the outside can be changed by changing the traveling direction of the radiant energy flux emitted from the reaction chamber to the outside by the reflector (for example, toward the reaction chamber). In addition, it is considered that arranging a member such as a reflector is relatively easier than changing the structure of the heating member itself, and it can be realized at a lower cost than the case of modifying the heating member itself in terms of cost. That is, the uniformity of the temperature distribution of the reaction gas and the substrate in contact with the reaction gas can be improved relatively easily and at low cost.

  The processing apparatus may further include a holding member that holds the processing object inside the reaction chamber. A plurality of reflectors may be installed at positions facing the holding member. The plurality of reflectors may be arranged in order from the upstream side to the downstream side in the flow direction of the reaction gas flowing through the inside of the reaction chamber.

  In this way, when the temperature of the reaction gas changes in the flow direction of the reaction gas, the reaction chamber can be adjusted by adjusting the state of the plurality of reflectors (for example, the arrangement conditions such as the angle and position of the reflecting surface of the reflector). The amount of radiant energy flux emitted from the outside to the outside can be locally changed in the flow direction of the reaction gas. For this reason, the uniformity of the temperature distribution of the reaction gas in the flow direction can be improved. For example, when the temperature of the reaction gas rises as it goes downstream in the region facing the holding member in the flow direction of the reaction gas, the reflector located upstream in the flow direction reflects the radiant energy flux in that region. The arrangement conditions are preferably adjusted so that the reflected radiant energy flux is incident on the reaction chamber again.

  In the processing apparatus, the plurality of reflectors may be rotatable about a rotation axis extending in a direction intersecting with the flow direction of the reaction gas. In this case, by adjusting the rotation angle about the rotation axis, the reflection direction of the radiant energy flux reflected by the reflector can be arbitrarily changed within the plane along the reaction gas flow direction. Therefore, it is possible to easily change the amount of radiant energy flux emitted from the reaction chamber in the portion where the reflector is installed (that is, the amount of heat conducted from the reaction chamber to the outside can be locally changed).

  The processing apparatus may further include a holding member that holds the processing object inside the reaction chamber. A plurality of reflectors may be installed at positions facing the holding member. The plurality of reflectors may be arranged in a direction intersecting with the flow direction of the reaction gas flowing through the inside of the reaction chamber.

  In this way, when the temperature distribution of the reaction gas occurs in a direction crossing the flow direction of the reaction gas, the amount of radiant energy flux emitted from the reaction chamber to the outside can be adjusted by adjusting the state of the plurality of reflectors. It can be locally changed in the direction crossing the flow direction of the reaction gas. For this reason, it is possible to improve the uniformity of the temperature distribution of the reaction gas in the direction crossing the flow direction and the temperature distribution of the substrate in contact therewith. For example, when the temperature of the reaction gas decreases as it moves away from the central portion of the holding member in the region facing the holding member in the direction crossing the flow direction of the reaction gas, the region is held in the crossing direction in the region. The reflector located on the part away from the central part of the member (on the end of the holding member) reflects the radiant energy flux, and the arrangement conditions are adjusted so that the reflected radiant energy flux is incident on the reaction chamber again. It is preferable that In addition, for example, when the holding member rotates and the object to be processed also rotates on the holding member, when it is desired to form a non-uniform portion in the reaction gas temperature distribution in a direction intersecting the reaction gas flow direction. In addition, the temperature distribution of the reaction gas can be controlled by adjusting the attitude of the reflector and the like.

  In the above processing apparatus, the plurality of reflectors may be rotatable about a rotation axis extending in the reaction gas flow direction. In this case, by adjusting the rotation angle around the rotation axis, the reflection direction of the radiant energy flux reflected by the reflector can be arbitrarily changed in a plane along the direction intersecting the reaction gas flow direction. . Therefore, it is possible to easily change the amount of radiant energy flux emitted from the reaction chamber in the portion where the reflector is installed (that is, the amount of heat conducted from the reaction chamber to the outside can be locally changed).

  The processing apparatus may further include a holding member that holds the processing object inside the reaction chamber. A plurality of reflectors may be installed in a matrix at a position facing the holding member. In this case, when the temperature distribution of the reaction gas changes in the flow direction of the reaction gas and in the direction crossing the flow direction, the amount of radiant energy flux emitted from the reaction chamber to the outside by adjusting the state of each reflector Can be changed for each location where individual reflectors are placed. For this reason, it is possible to improve the uniformity of the temperature distribution of the reaction gas and the temperature distribution of the substrate in the flow direction and the direction intersecting the flow direction.

  In the processing apparatus, some of the plurality of reflectors may be rotatable about a cross direction rotation axis extending in a direction crossing the flow direction of the reaction gas. Further, the other part of the plurality of reflectors may be rotatable about a flow direction rotation axis extending in the reaction gas flow direction. In this case, since the plurality of reflectors include two types of reflectors, one that can rotate around the cross direction rotation axis and one that can rotate around the flow direction rotation axis, the direction of the rotation axis of the reflector is the same for all reflectors. Compared to the same case, the degree of freedom in adjusting the reflection direction of the radiant energy flux can be increased.

  In the processing apparatus, the thermal resistance changing member may include a heat insulating member that prevents the progress of the radiant energy flux emitted from the inside of the reaction chamber to the outside.

  In this case, the amount of heat conducted from the inside of the reaction chamber to the outside can be locally changed by locally changing the heat insulating performance of the heat insulating member. In addition, it is considered that disposing the heat insulating member is relatively easier than changing the structure of the heating member itself, and it can be realized at a lower cost than the case of modifying the heating member itself in terms of cost. That is, the uniformity of the temperature distribution of the reaction gas and the uniformity of the temperature distribution of the substrate in contact with the reaction gas can be improved relatively easily and at low cost.

  The processing apparatus may further include a holding member that holds the processing object inside the reaction chamber. The thickness of the heat insulating member when viewed from the holding member may be locally changed. In this case, the heat insulating performance of the heat insulating member can be easily changed locally by a relatively simple method of changing the thickness of the heat insulating member. That is, the uniformity of the temperature distribution of the reaction gas can be improved relatively easily and at a low cost. In addition, for example, when the holding member rotates and the object to be processed also rotates on the holding member, when it is desired to form a non-uniform portion in the reaction gas temperature distribution in a direction intersecting the reaction gas flow direction. In addition, the temperature distribution of the reaction gas can be controlled by intentionally changing the thickness of the heat insulating member in the direction intersecting the flow direction of the reaction gas.

  In the said processing apparatus, it is preferable that a heat insulation member is arrange | positioned in the position facing a holding member. It is preferable that the thickness of the heat insulating member gradually increases from the downstream side to the upstream side in the flow direction of the reaction gas flowing through the inside of the reaction chamber.

  In this case, the heat insulation effect by the heat insulation member increases as it goes upstream in the flow direction of the reaction gas (that is, the amount of heat conducted from the inside of the reaction chamber to the outside can be reduced). Therefore, for example, in a conventional processing apparatus that does not have a heat insulating member, when the temperature of the reaction gas rises downstream in a region facing the holding member in the reaction gas flow direction, The temperature of the reaction gas on the side can be made higher than before. For this reason, the uniformity of the temperature distribution in the flow direction of the reaction gas and the uniformity of the temperature distribution of the substrate can be improved.

  In the said processing apparatus, it is preferable that a heat insulation member is arrange | positioned in the position facing a holding member. It is preferable that the heat insulating member gradually increase in thickness from the central portion toward the outer peripheral portion of the holding member in a direction intersecting with the flow direction of the reaction gas flowing inside the reaction chamber.

  In this case, the heat insulation effect by the heat insulating member increases as it goes toward the outer peripheral portion of the holding member in a direction crossing the flow direction of the reaction gas (that is, the amount of heat conducted from the inside of the reaction chamber to the outside can be reduced). Therefore, for example, in a conventional processing apparatus without a heat insulating member, when the temperature of the reaction gas decreases toward the outer peripheral portion of the holding member in the region facing the holding member, the configuration of the holding member is as described above. The temperature of the reaction gas at the outer periphery can be made higher than before. For this reason, the uniformity of the temperature distribution of the reaction gas and the substrate in the region facing the holding member can be improved.

  The processing apparatus may further include a holding member that holds the processing object inside the reaction chamber. The density of the heat insulating member when viewed from the holding member may be locally changed. In this case, the heat insulating performance of the heat insulating member can be easily changed locally by a relatively simple method of changing the density of the heat insulating member. That is, the uniformity of the temperature distribution of the reaction gas can be improved relatively easily and at a low cost. Here, as a method of changing the density of the heat insulating member, any method can be used. For example, heat insulation member elements having different densities are prepared and used separately for each location, or a base of heat insulation member formed with a plurality of openings dispersed throughout is prepared. With respect to the opening, a separate heat insulating member may be inserted for each location, and the amount or material of the separate member may be changed for each opening.

  In the said processing apparatus, it is preferable that a heat insulation member is arrange | positioned in the position facing a holding member. The heat insulating member preferably has a density that gradually increases from the downstream side to the upstream side in the flow direction of the reaction gas flowing through the inside of the reaction chamber.

  In this case, the heat insulation effect by a heat insulation member becomes high, so that it goes to the upstream of the flow direction of a reactive gas. Therefore, for example, in a conventional processing apparatus that does not have a heat insulating member, when the temperature of the reaction gas rises downstream in a region facing the holding member in the reaction gas flow direction, The temperature of the reaction gas on the side can be made higher than before. For this reason, the uniformity of the temperature distribution in the flow direction of the reaction gas can be improved.

  In the said processing apparatus, it is preferable that a heat insulation member is arrange | positioned in the position facing a holding member. The heat insulating member preferably has a density that gradually increases from the central portion toward the outer peripheral portion in the direction intersecting the flow direction of the reaction gas flowing inside the reaction chamber.

  In this case, the heat insulation effect by a heat insulation member becomes high, so that it goes to the outer peripheral part of a holding member in the direction which cross | intersects the flow direction of a reactive gas. Therefore, for example, in a conventional processing apparatus that does not have a heat insulating member, when the temperature of the reaction gas decreases toward the outer peripheral portion of the holding member in the region facing the holding member, the configuration of the reaction gas is as described above. The temperature of the reaction gas at the outer periphery can be made higher than before. For this reason, the uniformity of the temperature distribution of the reaction gas and the substrate in the region facing the holding member can be improved.

  In the processing apparatus, the reaction gas may be supplied from a direction parallel to the surface of the processing object. In such a configuration, since the temperature of the reaction gas rises while the reaction gas flows through the region facing the object to be processed, the temperature of the reaction gas increases toward the downstream side in the flow direction of the reaction gas. To do. Therefore, it is particularly effective to apply the present invention.

  In the processing apparatus, the reaction gas may be supplied from a direction perpendicular to the surface of the processing object. In this case, the planar shape of the reaction chamber may be circular. Further, the reaction gas may be supplied toward the central portion of the processing target (or the central portion of the holding member that holds the processing target).

  Even in the processing apparatus having such a configuration, it is effective to apply the present invention when the temperature distribution is non-uniform in the flow direction of the reaction gas.

  The processing method according to the present invention is a processing method using the above processing apparatus, the step of placing the processing object inside the reaction chamber, the step of heating the processing object to the processing temperature, and the heating And a processing step of supplying a reaction gas so as to come into contact with the processing object and performing a process of forming a film on the surface of the processing object. In the processing step, the thermal resistance changing member is disposed at a position facing the processing object.

  In this way, since the film formation process can be performed in a state where the uniformity of the temperature distribution of the reaction gas and the substrate in contact with the reaction gas is improved by the thermal resistance changing member, the film quality of the obtained film can be improved.

  According to the present invention, since processing such as film formation can be performed in a state where the uniformity of the temperature distribution of the reaction gas and the substrate in contact with the reaction gas is improved, the surface of the processing object can be uniformly processed. It becomes possible.

  Next, embodiments of the present invention will be described with reference to the drawings. In the following drawings, the same or corresponding parts are denoted by the same reference numerals, and description thereof will not be repeated.

(Embodiment 1)
FIG. 1 is a schematic plan view showing Embodiment 1 of a processing apparatus according to the present invention. 2 is a schematic cross-sectional view taken along line II-II in FIG. A first embodiment of a processing apparatus according to the present invention will be described with reference to FIG. 1 and FIG.

  1 and 2, a processing apparatus 1 is a vapor phase growth apparatus, and includes a tubular reaction chamber 3, a susceptor 5 that holds a substrate 4 as a processing object inside the reaction chamber 3, The reaction chamber 3 is disposed outside the reaction chamber 3 so as to face the susceptor 5. The heater 6 for heating the substrate 4 through the susceptor 5 is disposed outside the wall surface facing the susceptor 5 in the reaction chamber 3. And a reflector 10 as a heat resistance changing member. A support shaft (not shown) is connected to the center of the lower surface of the susceptor 5 having a circular planar shape disposed inside the reaction chamber 3. The susceptor 5 can rotate about the center 14 in the horizontal direction by rotating the support shaft. The reaction chamber 3 is supplied with a reaction gas used for processing the substrate 4 as indicated by an arrow 8 in FIGS.

  A plurality of reflectors 10 are arranged in order in the direction indicated by the arrow 8 which is the flow direction of the reaction gas. Each of the reflectors 10 is a plate-like body having a rectangular planar shape. The surface of the reflector 10 is mirror-finished, for example. The reflector 10 is rotatable as indicated by an arrow 13 around a rotating shaft 12 extending in a direction intersecting with the flow direction of the reaction gas (a direction perpendicular to the direction indicated by the arrow 8). The reflector 10 can change the angle of the surface of the reflector 10 with respect to the surface of the susceptor 5 by rotating around the rotating shaft 12. If the angle of the surface of the reflector 10 with respect to the surface of the susceptor 5 is changed in this way, the reflection direction of the radiant energy flux reflected on the surface of the reflector 10 can be changed as shown by the arrow 15 in FIG. For this reason, by making the reflection direction of the radiant energy flux reflected from the surface of the reflector 10 toward the upstream side in the flow direction of the reaction gas when viewed from the susceptor 5, the radiant energy flux reflected by the reflector 10. Can be collected upstream of the susceptor 5. As a result, the reaction gas and the substrate can be heated by the radiant energy flux upstream of the susceptor 5 in the flow direction of the reaction gas.

  Moreover, the projection area of the reflector 10 to the susceptor 5 side can be changed by rotating the reflector 10. For this reason, by adjusting the rotation angle of the reflector 10, it is possible to change the amount of radiant energy flux emitted from between the plurality of reflectors 10 to the outside of the reaction chamber 3 as indicated by the arrow 16.

  In the first embodiment of the present invention described above and other embodiments of the present invention described below, the plurality of reflectors 10 are adjacent to the reaction chamber 3 (at positions facing the susceptor 5 (or the substrate 4)). ) Any method can be used as the holding method. For example, a reflector assembly member 20 as shown in FIGS. 3 and 4 may be used. FIG. 3 is a schematic plan view showing an example of a reflector assembly member installed in the processing apparatus according to the present invention, and FIG. 4 shows another example of the reflector assembly member installed in the processing apparatus according to the present invention. It is a plane schematic diagram which shows.

  As shown in FIG. 3, the reflector assembly member 20 includes a support member 22 having a plurality of openings 23 for individually holding the plurality of reflectors 10 a to 10 e, and each of the openings 23 of the support member 22. The reflectors 10a to 10e are arranged inside. Each of the reflectors 10 a to 10 e is connected to the support member 22 through a shaft 24. Each of the reflectors 10a to 10e is rotatable about the shaft 24 (that is, about the rotating shaft 12 overlapping the shaft 24). Moreover, each of the reflectors 10a to 10e can be fixed at an arbitrary rotation angle. Any conventionally known method can be used as the fixing method.

  The thickness of the support member 22 in the direction perpendicular to the paper surface of FIG. 3 is such that the reflectors 10a to 10e can freely rotate about the rotation shaft 12 (from the center of the rotation shaft 12 to the lower surface of the support member 22). Is larger than the distance from the center of the rotating shaft 12 to the long sides of the outer circumferences of the reflectors 10a to 10e). By disposing such a reflector assembly member 20 on the upper wall of the reaction chamber 3 shown in FIG. 2, the processing apparatus 1 having the configuration shown in FIGS. 1 and 2 can be realized. Further, in the reflector assembly member 20 shown in FIG. 3, the support member 22 may also act as a fixed reflector. In this case, the radiant energy flux emitted from the reaction chamber 3 to the outside can be reflected also on the surface of the support member 22, and the radiant energy flux can be incident on the inside of the reaction chamber 3 again.

  Moreover, as a structure of the reflector assembly member 20, as shown in FIG. 4, you may use the supporting member 22 which has the opening part 25 which can arrange | position several reflectors 10a-10e collectively inside. That is, the reflector assembly member 20 shown in FIG. 4 basically has the same configuration as the reflector assembly member 20 shown in FIG. 3, but the shape of the support member 22 is different. That is, the support member 22 of the reflector assembly member 20 shown in FIG. 4 has one large opening 25. Inside the opening 25, a plurality of reflectors 10a to 10e are arranged side by side. Each of the reflectors 10a to 10e is connected to the inner peripheral side wall of the opening 25 via the shaft 24 in the same manner as the reflector assembly member 20 shown in FIG. The reflectors 10 a to 10 e are rotatable about the shaft 24.

  Even if the reflector assembly member 20 having such a configuration is used, the processing apparatus shown in FIGS. 1 and 2 can be realized. Further, in the reflector assembly member 20 shown in FIG. 4, when the reflectors 10a to 10e having the same size as the reflector assembly member 20 shown in FIG. 3 are used, between the reflectors 10a to 10e, the reflector assembly shown in FIG. A space wider than the member 20 can be secured. Therefore, the amount of radiant energy flux emitted from the reaction chamber 3 to the outside can be made larger than that of the reflector assembly member 20 shown in FIG.

  In addition, with respect to the support member 22 shown in FIG. 3 or FIG. 4, by using a material whose transmittance of the radiant energy flux is larger than the material constituting the reflectors 10 a to 10 e, the reflection of the radiant energy flux at the support member 22 is suppressed. May be.

  In the reflector assembly member 20 having the configuration shown in FIG. 4, the width of the reflectors 10 a to 10 e (the width in the direction perpendicular to the rotating shaft 12) is widened, so that the interior of the opening 25 occupied by the reflectors 10 a to 10 e is increased. The range in which the area can be changed can be increased. For example, when the rotation angle of the reflectors 10a to 10e is adjusted so that the direction of the main surface having a relatively large area of the reflectors 10a to 10e is the same as the direction in which the upper surface of the support member 22 extends, the opening 25 The widths of the main surfaces of the reflectors 10a to 10e may be determined so that is substantially closed (closed state) by the reflectors 10a to 10e.

  On the other hand, when the reflectors 10a to 10e are rotated 90 degrees around the rotation shaft 12 from the closed state, the opening 25 can be almost opened (open state). Considering the ratio (opening ratio) of the area other than the portion occupied by the reflectors 10a to 10e to the area of the opening 25, the reflector assembly member 20 shown in FIG. 4 is more preferable than the reflector assembly member 20 shown in FIG. Can achieve a large aperture ratio. The configuration of the reflector assembly member 20 as shown in FIGS. 3 and 4 can be used as a configuration for installing the reflector in the processing apparatus in another embodiment of the present invention.

  Summarizing the configuration of the processing apparatus 1 described above, the processing apparatus 1 according to the present invention includes a reaction chamber 3, a heater 6 as a heating member, and a reflector 10 as a thermal resistance changing member. The heater 6 heats the substrate 4 as a processing object to be processed using the reaction gas inside the reaction chamber 3. The reflector 10 locally changes the amount of heat conducted from the inside of the reaction chamber 3 to the outside when the substrate 4 is heated by the heater 6.

  In this way, even if the temperature distribution of the reaction gas becomes non-uniform due to the flow of the reaction gas supplied to the reaction chamber 3, the amount of heat conducted from the reaction chamber 3 to the outside using the reflector 10 can be reduced. By changing locally, it can suppress that the temperature distribution of a reactive gas becomes non-uniform | heterogenous. For example, at the upstream side of the susceptor 5 in the flow direction of the reaction gas where the temperature of the reaction gas is relatively low, or near the end of the susceptor 5 in the width direction perpendicular to the flow direction, the radiant energy is reflected by the reflector 10. The bundle can be reflected and incident again into the reaction chamber 3. As a result, the amount of heat conducted to the outside of the reaction chamber 3 is made smaller than in other regions. In this way, it is possible to suppress the temperature drop of the reaction gas in the region and the substrate in contact therewith, as compared with the case where the reflector 10 is not present. As a result, the uniformity of the temperature distribution of the reaction gas and the substrate in contact with the reaction gas can be improved.

  In the processing apparatus 1, the reflector 10 as a heat resistance changing member changes the traveling direction of the radiant energy flux emitted from the inside of the reaction chamber 3 to the outside. In this case, the amount of heat conducted from the inside of the reaction chamber 3 to the outside is changed as described above by changing the traveling direction of the radiant energy flux emitted from the reaction chamber 3 to the outside by the reflector 10 (for example, to the reaction chamber 3 side). can do. In addition, it is considered that arranging the member such as the reflector 10 is relatively easier than changing the structure of the heater 6 itself and can be realized at a lower cost than the case of modifying the heater 6 itself in terms of cost. . That is, the uniformity of the temperature distribution of the reaction gas and the substrate in contact with the reaction gas can be improved relatively easily and at low cost.

  As the reflector 10, any member can be used as long as the traveling direction of the radiant energy flux can be changed. For example, when the temperature at which the substrate 4 as the processing target is heated is relatively low (for example, 700 ° C. to 800 ° C. or less), the material of the reflector 10 is heat resistant steel, stainless steel, nickel alloy (Inconel, Hastelloy). Etc.) can be used. When the temperature at which the substrate 4 is heated is relatively high (for example, over 800 ° C.), the material of the reflector 10 is a refractory metal (tungsten (W), molybdenum (Mo), tantalum (Ta), etc.). , Ceramics (alumina, zirconia, mullite, silicon nitride, aluminum nitride, boron nitride, carbon nitride, silicon carbide, compounds or mixtures thereof), graphite, or graphite coated with silicon carbide or PBN (pyrolytic boron nitride) A layer coated or the like can be used. The material of the reflector 10 is appropriately selected according to the use conditions such as the temperature and environment in which the reflector 10 is used and the required strength of the reflector 10.

  The processing apparatus 1 further includes a susceptor 5 as a holding member that holds a substrate 4 as a processing target inside the reaction chamber 3. A plurality of reflectors 10 are installed at positions facing the susceptor 5. The plurality of reflectors 10 are arranged so as to be arranged in order from the upstream side to the downstream side in the flow direction of the reaction gas flowing in the reaction chamber 3 (the direction indicated by the arrow 8).

  In this way, when the temperature of the reaction gas changes in the flow direction of the reaction gas indicated by the arrow 8, the arrangement conditions such as the angles of the reflection surfaces of the plurality of reflectors 10 are adjusted, thereby adjusting the reaction gas from the reaction chamber 3. The amount of radiant energy flux emitted to the outside can be locally changed in the flow direction of the reaction gas. For this reason, it is possible to improve the uniformity of the temperature distribution of the reaction gas in the flow direction and the temperature distribution of the substrate 4 in contact therewith. For example, when the temperature of the reaction gas increases toward the downstream in the region facing the susceptor 5 in the flow direction of the reaction gas, the reflector 10 located on the upstream side in the flow direction in that region has a radiant energy flux. The rotation angle is adjusted so that the reflected radiant energy flux is incident again on the reaction chamber.

  In the processing apparatus 1, the plurality of reflectors 10 can rotate around a rotating shaft 12 extending in a direction intersecting with the flow direction of the reaction gas indicated by the arrow 8 (a direction perpendicular to the direction indicated by the arrow 8). Yes. In this case, the reflection direction of the radiant energy flux reflected by the reflector 10 can be arbitrarily changed within the plane along the flow direction of the reaction gas by adjusting the rotation angle around the rotation shaft 12. Therefore, the amount (heat amount) of the radiant energy flux emitted from the reaction chamber 3 can be easily changed at the portion where the reflector 10 is installed.

  In the processing apparatus 1, the reaction gas is supplied from a direction parallel to the surface of the substrate 4. In such a configuration, since the temperature of the reaction gas rises while the reaction gas flows through the region facing the substrate 4, the temperature of the reaction gas increases toward the downstream side in the reaction gas flow direction indicated by the arrow 8. Rises. Therefore, it is particularly effective to apply the present invention to make the reaction gas and the temperature distribution of the substrate 4 in contact therewith uniform.

  Next, a processing method (vapor phase growth method or film forming method) using the processing apparatus shown in FIGS. 1 and 2 will be described with reference to FIG. FIG. 5 is a flowchart for explaining a processing method using the processing apparatus shown in FIGS. 1 and 2.

  As shown in FIG. 5, in the processing method according to the present invention shown in FIG. 1 and FIG. 2, first, a preparation step (S10) is performed. Specifically, a step of placing the substrate 4 as a processing object on the susceptor 5 inside the reaction chamber 3 and a step of setting the atmospheric conditions inside the reaction chamber 3 to predetermined conditions are performed. At this time, the rotation angle and arrangement around the rotation axis 12 of the reflector 10 may be determined.

  Next, a heating step (S20) is performed. Specifically, the heater 6 is driven (when the heater 6 is, for example, a resistance heating element, the heater 6 is energized). As a result, the substrate 4 is heated via the susceptor 5.

  Next, a process step (S30) is performed. In this processing step (S30), specifically, the reaction gas is supplied into the reaction chamber 3 while the substrate 4 is heated as shown in FIG. 1 and FIG. A film is formed using the reaction gas as a raw material. The reaction gas is supplied into the reaction chamber 3 from the direction indicated by the arrow 8 in FIGS. At this time, the reflector 10 is disposed on the upper wall of the reaction chamber 3, and the rotation angle about the rotation axis 12 of the reflector 10 is such that the radiant energy flux reflected by the reflector 10 is as much as possible in the susceptor 5. It is determined to go upstream in the flow direction of the reaction gas.

  To summarize the characteristic configuration of the above-described processing method, the processing method shown in FIG. 5 is a film forming method or vapor phase growth method using the processing apparatus 1, and the substrate 4 as a processing object is processed. A reaction gas is provided so as to be in contact with the heated substrate 4, a step (preparation step (S <b> 10)) arranged in the reaction chamber 3, a step of heating the substrate 4 to the processing temperature (heating step (S <b> 20)), and the heated substrate 4. And a processing step (S30) of performing a process of forming a film on the surface of the substrate 4. In the processing step (S30), the reflector 10 as a thermal resistance changing member is disposed at a position facing the substrate 4. Further, in the processing step (S30), the reflector 10 is arranged so that the temperature distribution of the reaction gas at the position facing the surface of the substrate 4 becomes more uniform than when the reflector 10 is not present. In this way, since the film forming process in the processing step (S30) can be performed in a state where the temperature distribution of the reaction gas is improved by the reflector 10, the film quality of the film formed on the surface of the substrate 4 can be improved. Can be improved.

  FIG. 6 is a schematic plan view illustrating a modification of the first embodiment of the processing apparatus illustrated in FIGS. 1 and 2. A modification of the first embodiment of the processing apparatus shown in FIGS. 1 and 2 will be described with reference to FIG.

  The processing apparatus 1 shown in FIG. 6 basically has the same configuration as the processing apparatus shown in FIGS. 1 and 2, but the configuration of the reflector 10 is different. That is, in the processing apparatus 1 shown in FIG. 6, a plurality of reflectors 10 are installed in a matrix shape at positions facing the susceptor 5 as a holding member. Each reflector 10 is rotatable about a rotation shaft 12. Even with the processing apparatus 1 having such a configuration, the same effects as those of the processing apparatus 1 shown in FIGS. 1 and 2 can be obtained. Furthermore, in the processing apparatus 1 shown in FIG. 6, when the temperature distribution of the reaction gas becomes non-uniform in the direction (width direction) intersecting with the flow direction of the reaction gas (direction indicated by the arrow 8) at an angle of 90 degrees (width direction). The individual rotation angles of the reflectors 10 arranged along the width direction can be individually changed. As a result, the temperature distribution of the reaction gas can be adjusted in the width direction. That is, when the temperature distribution of the reaction gas changes in the flow direction of the reaction gas and in the width direction intersecting the flow direction, the radiation energy emitted to the outside from the reaction chamber 3 is adjusted by adjusting the rotation angle of each reflector 10. The amount (heat amount) of the bundle can be changed for each place where the individual reflectors 10 are arranged. For this reason, the uniformity of the temperature distribution of the reaction gas in the flow direction and the width direction can be improved. Therefore, the uniformity of the film formed on the substrate 4 can be further improved. In addition, although each reflector 10 was the same shape in FIG.1, FIG.2 and FIG.6, you may change the shape (and / or size) of the reflector 10 with the position. That is, the reflector 10 may include a plurality of types of reflectors having different shapes and / or sizes.

(Embodiment 2)
FIG. 7 is a schematic plan view showing Embodiment 2 of the processing apparatus according to the present invention. FIG. 8 is a schematic cross-sectional view taken along line VIII-VIII in FIG. A second embodiment of the processing apparatus according to the present invention will be described with reference to FIGS.

  Referring to FIGS. 7 and 8, processing device 1 basically has the same configuration as processing device 1 shown in FIGS. 1 and 2. However, in the processing apparatus 1 shown in FIG. 7 and FIG. 8, the direction (perpendicular to the direction shown by the arrow 8) in which the plurality of reflectors 10 intersect the flow direction of the reaction gas (the direction shown by the arrow 8). ) Are arranged side by side. The rotating shaft 12 of the reflector 10 is disposed so as to extend along the flow direction of the reaction gas indicated by the arrow 8.

  Here, if the characteristic structure of the processing apparatus 1 mentioned above is summarized, in the said processing apparatus 1, the reflector 10 is installed in multiple numbers in the position facing the susceptor 5 as a holding member. The plurality of reflectors 10 are arranged so as to be aligned in a direction (a width direction that is a direction perpendicular to the direction indicated by the arrow 8) that intersects the flow direction of the reaction gas that flows through the inside of the reaction chamber 3.

  In this way, when the temperature distribution of the reaction gas occurs in the width direction, the amount of radiant energy flux (heat amount) emitted from the reaction chamber 3 to the outside by adjusting the state (rotation angle) of the plurality of reflectors 10. ) Can be locally changed in the width direction. For this reason, the uniformity of the temperature distribution of the reaction gas in the width direction can be improved. For example, when the temperature of the reaction gas decreases in the region facing the susceptor 5 in the width direction as the distance from the center of the susceptor 5 decreases, the portion in the region that is separated from the center of the susceptor 5 in the width direction ( The reflector 10 located on the end of the susceptor 5 reflects the radiant energy flux, and its rotation angle is adjusted so that the reflected radiant energy flux is incident on the reaction chamber again.

  In the processing apparatus 1, the plurality of reflectors 10 are rotatable around a rotation shaft 12 that extends in the flow direction of the reaction gas indicated by an arrow 8. In this case, the reflection direction of the radiant energy flux reflected by the reflector 10 can be arbitrarily changed within the plane along the width direction by adjusting the rotation angle around the rotation axis 12. Therefore, the amount (heat amount) of the radiant energy flux emitted from the reaction chamber 3 can be easily changed at the portion where the reflector 10 is installed.

  FIG. 9 is a schematic plan view illustrating a modification of the second embodiment of the processing apparatus illustrated in FIGS. 7 and 8. A modification of the second embodiment of the processing apparatus according to the present invention will be described with reference to FIG.

  Referring to FIG. 9, processing device 1 basically has the same configuration as the processing device shown in FIGS. 7 and 8, but the configuration of reflector 10 is different. That is, in the processing apparatus shown in FIG. 9, a plurality of reflectors 10 are arranged in a matrix at positions facing the susceptor 5. Each reflector 10 is rotatable about a rotation shaft 12. Even with the processing apparatus 1 having such a configuration, the same effects as those of the processing apparatus 1 shown in FIGS. 7 and 8 can be obtained. Further, in the processing apparatus 1 shown in FIG. 9, when the temperature distribution of the reaction gas becomes non-uniform in the reaction gas flow direction (the direction indicated by the arrow 8), the reflectors are arranged along the reaction gas flow direction. Ten individual rotation angles can be changed individually. As a result, the temperature distribution of the reaction gas can be adjusted in the flow direction. For this reason, in the processing apparatus 1 shown in FIG. 9, as with the processing apparatus 1 shown in FIG. 6, the uniformity of the temperature distribution of the reaction gas in the flow direction and the width direction can be improved. Therefore, the uniformity of the film formed on the substrate 4 can be further improved. 7 to 9, the individual reflectors 10 have the same shape. However, the shape (and / or size) of the reflector 10 may be changed depending on its position. That is, the reflector 10 may include a plurality of types of reflectors having different shapes and / or sizes.

(Embodiment 3)
FIG. 10 is a schematic plan view showing Embodiment 3 of the processing apparatus according to the present invention. 11 is a schematic cross-sectional view taken along line XI-XI in FIG. A third embodiment of the processing apparatus according to the present invention will be described with reference to FIGS.

  As shown in FIGS. 10 and 11, the processing device 1 basically has the same configuration as the processing device shown in FIG. 9. However, in the processing apparatus 1 shown in FIG. 10 and FIG. 11, the planar shape of the reflectors 10a and 10b arranged in a matrix at positions facing the susceptor 5 is a square shape, and the rotation axes of the reflectors 10a and 10b. The difference from the processing apparatus 1 shown in FIG. 9 is that there are a plurality of 12 directions (two types in FIG. 10).

  In the processing apparatus shown in FIGS. 10 and 11, a plurality of reflectors 10a and 10b are arranged in a matrix, but the reflectors 10a located at both ends as viewed from the flow direction of the reaction gas (the direction indicated by the arrow 8) The direction of the rotating shaft 12 is a direction along the flow direction of the reaction gas indicated by the arrow 8. On the other hand, the reflector 10b located in the center as viewed from the flow direction of the reaction gas has a direction in which the direction of the rotating shaft 12 intersects the flow direction of the reaction gas indicated by the arrow 8 (in a direction perpendicular to the flow direction). It is a direction along a certain width direction.

  That is, in the processing apparatus 1, a part of the plurality of reflectors 10 a and 10 b (reflector 10 b) is centered on a cross direction rotation axis (rotation axis 12) extending in a direction (width direction) intersecting with the flow direction of the reaction gas. It can be rotated. Further, the other part (reflector 10a) of the plurality of reflectors 10a and 10b is rotatable about a flow direction rotation axis (rotation axis 12) extending in the flow direction of the reaction gas. In this case, the plurality of reflectors 10a and 10b include a plurality of types (two types in FIG. 10) of reflectors that can rotate around the rotating shaft 12 extending in different directions. Therefore, the degree of freedom of adjustment of the reflection direction of the radiant energy flux can be increased as compared with the case where the direction of the rotating shaft 12 of the reflectors 10a and 10b is the same for all the reflectors. Note that the number of types of reflectors 10 with different extending directions of the rotating shaft 12 is not limited to 2 as shown in FIG. 10 and may be any number of 3 or more.

  In the processing apparatus 1 shown in FIGS. 10 and 11, the reflectors 10a and 10b are arranged in a matrix, but the individual reflectors 10a and 10b may be arranged at random. In FIG. 10, all the reflectors 10a and 10b have the same shape and the same size. However, the reflectors 10a and 10b may include reflectors of a plurality of types. Moreover, the reflectors 10a and 10b may include reflectors having a plurality of types of shapes.

(Embodiment 4)
FIG. 12 is a schematic plan view showing Embodiment 4 of the processing apparatus according to the present invention. 13 is a schematic cross-sectional view taken along line XIII-XIII in FIG. A fourth embodiment of the processing apparatus according to the present invention will be described with reference to FIGS.

  The processing apparatus shown in FIGS. 12 and 13 is a vapor phase growth apparatus, which has a circular reaction chamber 3, a susceptor 5, a heater 6 as a heating member, and a plurality of thermal resistance change members. The reflector 10 is provided. A gas supply pipe 30 for supplying a reaction gas into the reaction chamber 3 is installed at the center of the upper wall of the reaction chamber 3. Further, gas exhaust pipes 32 for exhausting gas from the inside of the reaction chamber 3 are respectively installed at both ends facing each other through the center of the reaction chamber 3.

  A susceptor 5 that is a holding member for holding the substrate 4 that is an object to be processed is installed at the center of the reaction chamber 3. A heater 6 for heating the substrate 4 via the susceptor 5 is disposed outside the reaction chamber 3 and below the susceptor 5. A support shaft (not shown) or the like is connected to the center of the lower surface of the susceptor 5 having a circular planar shape. The susceptor 5 can be rotated in the horizontal direction by rotating the support shaft.

  A plurality of reflectors 10 are disposed on the upper wall of the reaction chamber 3 so as to surround the gas supply pipe 30. The plurality of reflectors 10 are arranged at a position facing the substrate 4 (or the susceptor 5) so as to be arranged in a plurality of rows (two rows in FIG. 12) concentrically around the central portion of the susceptor 5. The planar shape of the reflector 10 is a quadrangular shape (rectangular shape in FIG. 12). As shown in FIG. 12, the rotating shaft 12 of the reflector 10 intersects with the flow direction of the reaction gas supplied from the gas supply pipe 30 to the inside of the reaction chamber 3 (along the circumference of the circle in which the reflectors 10 are arranged). The reflector 10 is arranged so as to extend in the direction). The reflector 10 is rotatable in the direction indicated by the arrow 13 around the rotation shaft 12.

  Next, the operation of the processing apparatus shown in FIGS. 12 and 13 will be briefly described. In the processing apparatus 1 shown in FIG. 12 and FIG. 13, the substrate 4 is disposed on the susceptor 5, the atmospheric condition inside the reaction chamber 3 is adjusted to a predetermined condition, and then the heater 6 is operated to remove the substrate 4. Heat. In addition, the susceptor 5 rotates in the horizontal direction around the center. Then, with the temperature of the substrate 4 at a predetermined temperature (processing temperature), the reaction gas is supplied from the gas supply pipe 30 into the reaction chamber 3 as indicated by an arrow 34. The supplied reaction gas is discharged from the gas supply pipe 30 as indicated by an arrow 34 and then flows from the central portion toward the outer peripheral portion of the susceptor 5, and finally through the gas exhaust pipe 32. Discharged from. On the surface of the substrate 4, a film forming process is performed using a reactive gas. At this time, the rotation angle of the reflector 10 is adjusted so that the uniformity of the temperature condition of the reaction gas is improved.

  To summarize the characteristic configuration of the processing apparatus 1 described above, the processing apparatus 1 according to the present invention includes a reaction chamber 3 having a circular planar shape, a heater 6 as a heating member, and a thermal resistance changing member. And reflector 10. The heater 6 heats the substrate 4 as a processing object to be processed using the reaction gas inside the reaction chamber 3. The reaction gas is supplied from a direction perpendicular to the surface of the substrate 4. Further, as shown in FIG. 12, the reaction gas is supplied toward the central portion of the susceptor 5. The reflector 10 locally changes the amount of heat conducted from the inside of the reaction chamber 3 to the outside when the substrate 4 is heated by the heater 6.

  The processing apparatus 1 further includes a susceptor 5 as a holding member that holds the substrate 4 inside the reaction chamber 3. A plurality of reflectors 10 are installed at positions facing the susceptor 5. The plurality of reflectors 10 are sequentially arranged from the upstream side to the downstream side in the flow direction of the reaction gas flowing through the inside of the reaction chamber 3 (that is, from the central portion to the outer peripheral portion side of the reaction chamber 3 where the gas supply pipe 30 is located). They are arranged so as to line up, and a plurality are arranged along a direction perpendicular to the flow direction of the reaction gas. That is, the plurality of reflectors 10 are arranged so as to be positioned on a plurality of concentric circles with the gas supply pipe 30 of the reaction chamber 3 as the center.

  Even in the processing apparatus having such a configuration, the same effect as that obtained by the first embodiment of the processing apparatus according to the present invention can be obtained. That is, even when the temperature distribution of the reaction gas becomes non-uniform due to the flow of the reaction gas as shown by the arrow 34 supplied to the reaction chamber 3, it is conducted from the reaction chamber 3 to the outside using the reflector 10. The amount of heat can be changed locally. As a result, it is possible to suppress the temperature distribution of the reaction gas from becoming uneven. For example, in the region on the outer peripheral side of the susceptor 5, which is a region where the temperature of the reaction gas tends to decrease relatively, the amount of heat conducted to the outside of the reaction chamber 3 by the reflector 10 is made smaller than in other regions. Specifically, the amount of heat conducted from the inside of the reaction chamber 3 to the outside can be changed by changing the traveling direction of the radiant energy flux emitted from the reaction chamber 3 to the outside by the reflector 10 to the reaction chamber 3 side. In this way, it is possible to suppress the temperature drop of the reaction gas in the region, compared to the case where the reflector 10 is not present. As a result, the uniformity of the temperature distribution of the reaction gas can be improved.

  Further, similarly to the processing apparatus 1 shown in FIG. 1 and the like, it is relatively easy to arrange the reflector 10 than to change the structure of the heater 6 itself, and it can be realized at low cost. .

  In the processing apparatus 1, the plurality of reflectors 10 have rotating shafts 12 extending in a direction (circumferential direction of concentric circles arranged so that the reflectors 10 are arranged) intersecting the flow direction of the reaction gas (the direction indicated by the arrow 34). It is rotatable around the center. In this case, by adjusting the rotation angle about the rotation axis 12, the reflection direction of the radiant energy flux reflected by the reflector 10 is a plane perpendicular to the rotation axis 12 and along the flow direction of the reaction gas. Can be changed arbitrarily. Therefore, it is possible to easily change the amount of radiant energy flux emitted from the reaction chamber 3 at the portion where the reflector 10 is installed. In addition, since a plurality of reflectors 10 are arranged in an annular shape (specifically concentric) around the gas supply pipe 30 that is a reaction gas supply section, the outer periphery side of the reaction chamber 3 is viewed from the gas supply pipe 30. It is possible to control the amount of radiant energy flux emitted from the reaction chamber 3 in any direction toward.

  In the processing apparatus 1 described above, the reflectors 10 have the same shape and size, but the shape (and / or size) of the reflector 10 may be changed depending on its position. That is, the reflector 10 may include a plurality of types of reflectors having different shapes and / or sizes. For example, the shape and / or size may be changed for each reflector 10 arranged in an annular shape.

(Embodiment 5)
FIG. 14 is a schematic plan view showing Embodiment 5 of the processing apparatus according to the present invention. 15 is a schematic cross-sectional view taken along line XV-XV in FIG. Embodiment 5 of the processing apparatus according to the present invention will be described with reference to FIGS.

  The processing apparatus 1 shown in FIGS. 14 and 15 basically has the same configuration as the processing apparatus 1 shown in FIGS. 12 and 13. However, in the processing apparatus 1 shown in FIGS. 14 and 15, the rotating shaft 12 of the reflector 10 is arranged so as to extend along the flow direction of the reaction gas indicated by the arrow 34.

  Also by such a processing apparatus 1, the same effect as that obtained by the processing apparatus 1 shown in FIGS. 12 and 13 can be obtained. Furthermore, in the processing apparatus 1 shown in FIGS. 14 and 15, as described above, the plurality of reflectors 10 are rotatable around the rotating shaft 12 extending in the direction indicated by the arrow 34 which is the flow direction of the reaction gas. . In this case, by adjusting the rotation angle around the rotation axis 12, the reflection direction of the radiant energy flux reflected by the reflector 10 is perpendicular to the rotation axis 12 and intersects the flow direction of the reaction gas (reflector). It can be arbitrarily changed in a plane along the circumferential direction of the concentric circles 10 are aligned along. Therefore, it is possible to easily change the amount of radiant energy flux emitted from the reaction chamber 3 at the portion where the reflector 10 is installed. In addition, the rotation angle of the reflector 10 can be adjusted so that the radiant energy flux reflected from the reflector 10 is irradiated toward a region where the temperature of the reaction gas is more likely to decrease than other portions. For this reason, the temperature distribution of the reaction gas can be made more uniform.

  In the processing apparatus 1 described above, the reflectors 10 have the same shape and size, but the shape (and / or size) of the reflector 10 may be changed depending on its position. That is, the reflector 10 may include a plurality of types of reflectors having different shapes and / or sizes. For example, the shape and / or size may be changed for each reflector 10 arranged in an annular shape.

(Embodiment 6)
FIG. 16 is a schematic plan view showing Embodiment 6 of the processing apparatus according to the present invention. 17 is a schematic cross-sectional view taken along line XVII-XVII in FIG. A fourth embodiment of the processing apparatus according to the present invention will be described with reference to FIGS.

  The processing device 1 shown in FIGS. 16 and 17 basically has the same configuration as the processing device 1 shown in FIGS. 12 and 13. However, in the point that the plurality of reflectors 10a and 10b are arranged so as to draw a triple circle concentrically, and the direction of the rotating shaft 12 is different between the reflector 10a and the reflector 10b, as shown in FIG. The processing apparatus 1 shown in FIG. 17 is different from the processing apparatus 1 shown in FIGS. Specifically, in the processing apparatus 1 of FIGS. 16 and 17, in the reflector 10a located on the innermost side and the outermost side, the rotary shaft 12 is positioned so as to extend in the direction along the circumference of the concentric circle in which the reflectors 10a are arranged. ing. Moreover, in the reflector 10b arrange | positioned at the position pinched | interposed into the reflector 10a arrange | positioned on two concentric circles, the rotating shaft 12 is arrange | positioned so that it may extend along the flow direction of the reactive gas shown by the arrow 34. FIG.

  Also by such a processing apparatus 1, the same effect as the processing apparatus shown in FIGS. 12 and 13 or FIGS. 14 and 15 can be obtained. Further, a plurality of reflectors 10a and 10b can rotate around a cross-direction rotating shaft (rotating shaft 12 of the reflector 10a), and two can rotate around a flow-direction rotating shaft (rotating shaft 12 of the reflector 10b). Since the type of reflector is included, the degree of freedom in adjusting the reflection direction of the radiant energy flux can be increased as compared with the case where the direction of the rotating shaft 12 of the reflectors 10a and 10b is the same for all the reflectors.

  In FIG. 16, the reflectors 10 are arranged in triple concentric circles, but the reflectors 10 may be arranged in any number of rings (for example, four or more concentric circles). In FIGS. 16 and 17, the reflectors 10 having different directions of the rotating shaft 12 are alternately arranged along the reaction gas flow direction (the direction indicated by the arrow 34), but are arranged in other orders. May be. For example, the reflectors 10 having the same direction of the rotary shaft 12 in the direction indicated by the arrow 34 may be disposed adjacent to each other. In FIG. 16, all the reflectors 10 constituting the same concentric circle are aligned in the direction of the rotating shaft 12 with respect to the flow direction of the reaction gas, but a plurality of reflectors 10 constituting the same concentric circle are rotated in the flow direction of the reaction gas. The thing in which the extension direction of the axis | shaft 12 differs may be included. Further, the plurality of reflectors 10 may be arranged in a row in the reaction gas flow direction, but the reflectors 10 are arranged so that the plurality of reflectors 10 do not overlap with each other in the reaction gas flow direction. It may be determined.

  Moreover, in the said processing apparatus 1, although all the reflectors 10 were the same shape and size, you may change the shape (and / or size) of the reflector 10 with the position. That is, the reflector 10 may include a plurality of types of reflectors having different shapes and / or sizes. For example, the shape and / or size may be changed for each reflector 10 arranged in an annular shape. Alternatively, the shape and / or size of the reflector 10 may be changed for each direction of the rotating shaft 12.

(Embodiment 7)
FIG. 18 is a schematic plan view showing Embodiment 7 of the processing apparatus according to the present invention. FIG. 19 is a schematic sectional view taken along line XIX-XIX in FIG. 20 is a schematic view seen from the downstream side in the flow direction of the reaction gas indicated by the arrow 8 of the processing apparatus shown in FIG. A seventh embodiment of the processing apparatus according to the present invention will be described with reference to FIGS.

  Referring to FIGS. 18 to 20, the processing apparatus 1 basically has the same configuration as the processing apparatus 1 shown in FIGS. 1 and 2, but the heat resistance changing member is not the reflector 10 but the heat insulating member 40. Is different. That is, in the processing apparatus 1 shown in FIGS. 18 to 20, the heat insulating member 40 in which a plurality of heat insulating blocks 42 are stacked is disposed on the upper wall of the reaction chamber 3 and facing the susceptor 5. . As a material of the heat insulating member 40, for example, graphite is used. Further, in the heat insulating member 40, the heat insulating block 42 is arranged so that the number of stacked heat insulating blocks 42 gradually decreases from the upstream side to the downstream side in the reaction gas flow direction indicated by the arrow 8. Yes. That is, the thickness of the heat insulating member 40 when viewed from the susceptor 5 is locally changed. As a result, the thickness of the heat insulating member 40 as viewed from the substrate 4 or the susceptor 5 side gradually decreases from the upstream side to the downstream side in the reaction gas flow direction. As can be seen from FIGS. 19 and 20, in the direction perpendicular to the flow direction of the reaction gas (width direction), the number of stacked heat insulation blocks 42 at a predetermined position in the flow direction (the thickness of the heat insulation member 40). ) Is the same.

  Here, as the heat insulating member 40, any member can be used as long as the progress of the radiant energy flux can be prevented. For example, the above-described graphite or the like can be considered as the material of the heat insulating member 40. The material of such a heat insulating member 40 is appropriately selected according to the use conditions such as the temperature and environment to be used and the required strength of the heat insulating member 40. Further, the surface of the heat insulating member 40 may be mirror-finished. In this case, the radiant energy flux can be reflected on the surface of the heat insulating member 40 to further enhance the heat insulating effect.

  Even with the processing apparatus 1 having such a configuration, the same effects as those of the processing apparatus 1 shown in FIGS. 1 and 2 can be obtained. Furthermore, the heat insulating performance of the heat insulating member 40 can be locally easily changed by a relatively simple method of changing the thickness of the heat insulating member 40. That is, the uniformity of the temperature distribution of the reaction gas can be improved relatively easily and at a low cost.

  Further, in the processing apparatus 1, the heat insulating member 40 is disposed at a position facing the susceptor 5. The heat insulating member 40 gradually increases in thickness from the downstream side to the upstream side in the flow direction of the reaction gas flowing in the reaction chamber 3 (the direction indicated by the arrow 8). In this case, the heat insulation effect by the heat insulation member 40 becomes higher toward the upstream side in the reaction gas flow direction. Therefore, for example, in the conventional processing apparatus in which the heat insulating member 40 does not exist, when the temperature of the reaction gas increases toward the downstream in the region facing the susceptor 5 in the flow direction of the reaction gas, the above configuration is used. The temperature of the reaction gas on the upstream side can be made higher than before. For this reason, the uniformity of the temperature distribution in the flow direction of the reaction gas can be improved.

  FIG. 21 is a schematic front view illustrating a modification of the seventh embodiment of the processing apparatus illustrated in FIGS. 18 to 20. FIG. 21 corresponds to FIG. A modification of the seventh embodiment of the processing apparatus shown in FIGS. 18 to 20 will be described with reference to FIG.

  The processing apparatus 1 shown in FIG. 21 basically has the same configuration as the processing apparatus 1 shown in FIGS. 18 to 20, but the heat insulating member 40 in the direction (width direction) perpendicular to the flow direction of the reaction gas. The shape is different. Specifically, in the width direction, the thickness of the heat insulating member 40 in the portion facing the central portion of the susceptor 5 is the thinnest, and as it goes to both ends in the width direction (portions facing the outer peripheral portion of the susceptor 5), The thickness of the heat insulating member 40 is gradually increased. More specifically, the number of stacked heat insulator blocks 42 is the smallest at the center in the width direction, and the number of heat insulating block 42 is gradually increased toward both ends in the width direction. In addition, the heat insulating member 40 of the processing apparatus 1 shown in FIG. 21 is the same as the processing apparatus 1 shown in FIGS. The thickness becomes thinner as it goes to.

  In this case, the same effect as the processing apparatus 1 shown in FIGS. 18 to 20 can be obtained. Furthermore, in the processing apparatus 1 shown in FIG. 21, the heat insulation effect by the heat insulation member 40 becomes high, so that it goes to the outer peripheral part of the susceptor 5 in the width direction. Therefore, for example, in the conventional processing apparatus 1 in which the heat insulating member 40 does not exist, when the temperature of the reaction gas decreases toward the outer periphery of the susceptor 5 in the region facing the susceptor 5, as shown in FIG. 21. The structure can suppress the temperature drop of the reaction gas at the end in the width direction. For this reason, the uniformity of the temperature distribution of the reaction gas in the region facing the susceptor 5 (especially in the width direction) can be improved.

(Embodiment 8)
FIG. 22 is a schematic plan view showing Embodiment 8 of the processing apparatus according to the present invention. 23 is a schematic cross-sectional view taken along line XXIII-XXIII in FIG. 24 is a schematic cross-sectional view taken along line XXIV-XXIV in FIG. With reference to FIGS. 22-24, Embodiment 8 of the processing apparatus according to this invention is demonstrated.

  The processing apparatus 1 shown in FIGS. 22 to 24 basically has the same configuration as the processing apparatus shown in FIGS. 18 to 20. However, in the processing apparatus 1 shown in FIG. 22 to FIG. 24, the heat insulating member 40 includes a heat insulating body base 43 formed by dispersing a plurality of through holes 44 having the same shape as concave portions, and the inside of the through holes 44. It is comprised from the filler 45 arrange | positioned in this. The heat insulating member 40 is disposed on the upper wall of the reaction chamber 3 so as to face the susceptor 5 (or the substrate 4). Moreover, although the filler 45 may be comprised with the same heat insulating material as the heat insulation base 43, you may be comprised with the heat insulating material of another kind.

  As shown in FIG. 23, the size (length) of the filler 45 gradually decreases from the upstream side to the downstream side in the flow direction of the reaction gas (the direction indicated by the arrow 8). For this reason, the density of the heat insulating member 40 when viewed from the substrate 4 or the susceptor 5 is locally changed. More specifically, the density of the heat insulating member 40 when viewed from the substrate 4 or the susceptor 5 is gradually decreased from the upstream side to the downstream side in the reaction gas flow direction indicated by the arrow 8.

  Further, as shown in FIG. 24, at an arbitrary position in the flow direction of the reaction gas, the size of the filler 45 positioned inside the plurality of through holes 44 arranged in the direction (width direction) perpendicular to the flow direction is substantially the same. It is the same.

  In this case, the heat insulating performance of the heat insulating member 40 can be locally easily changed by a relatively simple method of changing the density of the heat insulating member 40. That is, the uniformity of the temperature distribution of the reaction gas can be improved easily and at low cost.

  Further, in the processing apparatus 1, the heat insulating member 40 gradually increases in density from the downstream side to the upstream side in the flow direction of the reaction gas flowing through the reaction chamber 3. For this reason, the heat insulation effect by the heat insulation member 40 becomes high, so that it goes to the upstream of the flow direction of the reactive gas shown by the arrow 8. FIG. Therefore, in the conventional processing apparatus in which the heat insulating member 40 does not exist, when the temperature of the reaction gas increases toward the downstream in the region facing the susceptor 5 in the reaction gas flow direction, the processing apparatus 1 shown in FIGS. Thus, the temperature of the reaction gas on the upstream side can be made higher than before. For this reason, the uniformity of the temperature distribution in the flow direction of the reaction gas can be improved.

  Here, as a method of changing the density of the heat insulating member 40, any method other than the methods shown in FIGS. 22 to 24 can be used. For example, a method may be used in which elements of heat insulating members having different densities are prepared, and these elements are properly used for each place. Moreover, in the processing apparatus 1 shown in FIGS. 22-24, you may change the material of the filler 45 for every through-hole 44 as an opening part. For example, the sizes of the through holes 44 formed in the heat insulator base 43 are unified. And the size of the filler 45 arrange | positioned at each through-hole 44 may also be unified, and the material and density may be changed. Alternatively, the filler 45 may have the same planar shape, but a plurality of types of fillers 45 having a plurality of sizes may be prepared.

  FIG. 25 is a schematic cross-sectional view showing a modification of the eighth embodiment of the processing apparatus shown in FIGS. FIG. 25 corresponds to FIG. A modification of the eighth embodiment of the processing apparatus shown in FIGS. 22 to 24 will be described with reference to FIG.

  The processing apparatus 1 shown in FIG. 25 basically has the same configuration as the processing apparatus 1 shown in FIGS. 22 to 24, but has through-holes aligned in a direction (width direction) perpendicular to the flow direction of the reaction gas. The size of the filler 45 located inside 44 is different from that of the processing apparatus 1 shown in FIGS. Specifically, among the through holes 44 arranged in the width direction, the relatively small filler 45 is placed in the through hole 44 (the through hole 44 located in the center part in the width direction) facing the center part of the susceptor 5. Is arranged. And the magnitude | size of the filler 45 is gradually enlarged as it goes to both ends from the center part in the width direction. That is, the heat insulating member 40 gradually moves from the region facing the central portion of the susceptor 5 toward the outer peripheral portion (both end portions) in the width direction, which is a direction intersecting the flow direction of the reaction gas flowing through the reaction chamber 3. The density is high.

  In this case, the processing apparatus 1 shown in FIG. 25 can obtain the same effects as those obtained by the processing apparatus 1 shown in FIGS. Furthermore, in the processing apparatus 1 shown in FIG. 25, the heat insulation effect by the heat insulation member 40 becomes higher as it goes toward the outer periphery of the susceptor 5 in the direction (width direction) intersecting the flow direction of the reaction gas. Therefore, for example, in the conventional processing apparatus in which the heat insulating member 40 does not exist, when the temperature of the reaction gas decreases toward the outer periphery of the susceptor 5 in the region facing the susceptor 5, the reaction gas is configured as described above. The temperature fall of the reaction gas in the outer peripheral part of can be suppressed. For this reason, the uniformity of the temperature distribution of the reaction gas in the region facing the susceptor 5 can be further improved.

(Embodiment 9)
FIG. 26 is a schematic plan view showing Embodiment 9 of the processing apparatus according to the present invention. 27 is a schematic sectional view taken along line XXVII-XXVII in FIG. With reference to FIGS. 26 and 27, a ninth embodiment of the processing apparatus according to the present invention will be described.

  Referring to FIGS. 26 and 27, the processing apparatus 1 basically has the same configuration as the processing apparatus 1 shown in FIGS. 12 and 13, but the heat resistance changing member is not the reflector 10 but the heat insulating member 40. Is different. That is, in the processing apparatus 1 shown in FIGS. 26 and 27, a plurality of heat insulator blocks concentrically stacked on the upper wall of the reaction chamber 3 having a circular planar shape and facing the susceptor 5. A heat insulating member 40 made of 42 is disposed. Further, in the heat insulating member 40, the heat insulating block 42 is gradually stacked from the upstream side toward the downstream side in the flow direction of the reaction gas indicated by the arrow 34 (that is, from the central side to the outer peripheral side of the susceptor 5). The insulator block 42 is arranged so that the number increases. As a result, the thickness of the heat insulating member 40 as viewed from the substrate 4 or the susceptor 5 side gradually increases from the upstream side to the downstream side in the reaction gas flow direction (from the center side of the susceptor 5 toward the outer peripheral side). It is getting thicker. That is, the thickness of the heat insulating member 40 when viewed from the susceptor 5 is locally changed.

  Even with the processing apparatus 1 configured as described above, the same effects as those obtained by the fourth embodiment of the processing apparatus according to the present invention can be obtained. For example, in the region on the outer periphery side of the susceptor 5, which is a region where the temperature of the reaction gas is relatively likely to decrease, the amount of heat conducted to the outside of the reaction chamber 3 by the heat insulating member 40 is made smaller than other regions. If it does in this way, the temperature fall of the reactive gas in the said area | region can be suppressed rather than the case where the heat insulation member 40 does not exist. As a result, the uniformity of the temperature distribution of the reaction gas can be improved.

  As can be seen from FIG. 27, the number of stacked heat insulating blocks 42 at a predetermined position in the direction perpendicular to the flow direction of the reaction gas (the concentric circumferential direction in which the heat insulating blocks 42 are stacked) (the heat insulating member 40). Are the same). The heat insulator block 42 has a so-called bent rod-like shape in which concentric circles are divided at a plurality of locations. Therefore, the amount (thickness) of the heat insulator block for each direction when viewed from the center of the susceptor 5 is changed by changing the number of stacked heat insulator blocks 42 depending on the direction when viewed from the center of the susceptor 5. Can also be changed. As a result, when the temperature of the reaction gas varies for each direction when viewed from the center of the susceptor 5, the number of stacked heat insulator blocks 42 is changed for each direction to react for each direction. The amount of heat radiated from the chamber 3 to the outside can be changed. As a result, the uniformity of the reaction gas temperature can be further improved. A plurality of sizes of the ring-shaped heat insulator block 42 may be prepared to constitute the heat insulating member 40.

(Embodiment 10)
FIG. 28 is a schematic plan view showing Embodiment 10 of the processing apparatus according to the present invention. 29 is a schematic cross-sectional view taken along line XXIX-XXIX in FIG. With reference to FIGS. 28 and 29, a tenth embodiment of the processing apparatus according to the present invention will be described.

  The processing apparatus 1 shown in FIGS. 28 and 29 basically has the same configuration as the processing apparatus 1 shown in FIGS. 26 and 27, but the configuration of the heat insulating member 40 is different. Specifically, in the processing apparatus 1 shown in FIG. 28 and FIG. 29, the heat insulating member 40 includes a heat insulating body base 43 formed by dispersing a plurality of through holes 44 as recesses, and the inside of the through holes 44. It is comprised from the filler 45 arrange | positioned in this. The planar shape of the heat insulator base 43 is an annular shape (doughnut shape) with a hole for passing the gas supply pipe 30 in the center. The heat insulating member 40 is disposed on the upper wall of the reaction chamber 3 so as to face the susceptor 5 (or the substrate 4). Moreover, although the filler 45 may be comprised with the same heat insulating material as the heat insulation base 43, you may be comprised with the heat insulating material of another kind. Further, the through holes 44 are formed so as to be arranged concentrically around the central portion of the heat insulating member 40. The through holes 44 may be arranged in a matrix or may be arranged so that the distribution density thereof is locally different. Further, the planar shapes of the through holes 44 are all the same as shown in FIG. 28, but the through holes 44 may include different planar shapes or different sizes. Further, in place of the through hole 44, a bottomed concave portion that does not reach from the front surface to the back surface of the heat insulating base 43 may be formed.

  As shown in FIG. 29, the size of the filler 45 is gradually increased from the upstream side to the downstream side in the flow direction of the reaction gas (the direction indicated by the arrow 34). For this reason, the density of the heat insulating member 40 when viewed from the substrate 4 or the susceptor 5 side is gradually increased from the upstream side to the downstream side in the flow direction of the reaction gas (from the central portion side to the downstream side of the reaction chamber 3). It has become. That is, the density of the heat insulating member 40 when viewed from the susceptor 5 is locally changed.

  In addition, in the processing apparatus 1 shown in FIGS. 28 and 29, at any position in the reaction gas flow direction (any position from the center of the reaction chamber 3), the processing apparatus 1 is located inside the plurality of through holes 44 arranged concentrically. The sizes of the fillers 45 to be made are almost the same.

  Even with such a configuration, the same effects as those of the processing apparatus 1 shown in FIGS. 26 and 27 can be obtained.

(Embodiment 11)
FIG. 30 is a schematic sectional view showing Embodiment 11 of the processing apparatus according to the present invention. With reference to FIG. 30, an eleventh embodiment of the processing apparatus according to the present invention will be described. 30 shows a cross section similar to the cross-sectional schematic diagram shown in FIG.

  Referring to FIG. 30, the processing apparatus 1 has a configuration in which a processing target surface of a substrate that is a processing target is directed downward (so-called face-down configuration). The processing apparatus 1 is configured such that the processing apparatus shown in FIGS. 1 and 2 is turned upside down. Specifically, the processing apparatus 1 is a vapor phase growth apparatus, and is installed on a tubular reaction chamber 3 and an upper wall of the reaction chamber 3, and holds a substrate 4 as a processing object inside the reaction chamber 3. The susceptor 5 is disposed outside the upper wall of the reaction chamber 3 and is opposed to the susceptor 5, and the heater 6 for heating the substrate 4 through the susceptor 5 is opposed to the susceptor 5 in the reaction chamber 3. And a reflector 10 as a thermal resistance changing member disposed outside the wall (bottom wall). A support shaft (not shown) or the like is connected to the center of the surface facing the upper wall of the reaction chamber 3 to the susceptor 5 having a circular planar shape disposed inside the reaction chamber 3. The susceptor 5 can be rotated about the center in the horizontal direction by rotating the support shaft. The reaction chamber 3 is supplied with a reaction gas used for processing the substrate 4 as indicated by an arrow 8 in FIG.

  Similar to the processing apparatus 1 shown in FIGS. 1 and 2, a plurality of reflectors 10 are arranged in order in the direction indicated by the arrow 8 that is the flow direction of the reaction gas. Each of the reflectors 10 is a plate-like body having a rectangular planar shape. The surface of the reflector 10 is mirror-finished, for example. The reflector 10 is rotatable as indicated by an arrow 13 around a rotating shaft 12 extending in a direction intersecting with the flow direction of the reaction gas (a direction perpendicular to the direction indicated by the arrow 8). The reflector 10 can change the angle of the surface of the reflector 10 with respect to the surface of the susceptor 5 by rotating around the rotating shaft 12. Thus, if the angle of the surface of the reflector 10 with respect to the surface of the susceptor 5 is changed, the same effect as the processing apparatus 1 shown in FIG. 1 and FIG. 2 can be acquired. 30 is the same as the processing method using the processing apparatus 1 shown in FIGS. 1 and 2. The processing method (vapor phase growth method or film forming method) using the processing apparatus 1 shown in FIG.

  Further, the configuration of the reflector 10 is an arbitrary configuration other than the configuration shown in FIG. 30 (specifically, the configuration of the reflector 10 in any of the processing apparatuses 1 of the first to third embodiments of the present application). Can be used. Even if it does in this way, the effect similar to each processing apparatus 1 of Embodiment 1- Embodiment 3 of this application can be acquired.

(Embodiment 12)
FIG. 31 is a schematic sectional view showing Embodiment 12 of the processing apparatus according to the present invention. A twelfth embodiment of the processing apparatus according to the present invention will be described with reference to FIG. FIG. 31 shows a cross section similar to the schematic cross section shown in FIG.

  Referring to FIG. 31, the processing apparatus 1 has a configuration in which the surface to be processed of the substrate that is the processing target is directed downward, similarly to the processing apparatus 1 illustrated in FIG. 30. The processing apparatus 1 is configured such that the processing apparatus shown in FIGS. 12 and 13 is turned upside down. Specifically, the processing apparatus 1 is a vapor phase growth apparatus, in which the planar shape is a circular reaction chamber 3, a susceptor 5, a heater 6 as a heating member, and a plurality of reflectors as a thermal resistance changing member. 10. A gas supply pipe 30 for supplying a reaction gas into the reaction chamber 3 is installed at the center of the bottom wall of the reaction chamber 3. Further, gas exhaust pipes 32 for exhausting gas from the inside of the reaction chamber 3 are respectively installed at both ends facing each other through the center of the reaction chamber 3.

  A susceptor 5, which is a holding member for holding the substrate 4, which is an object to be processed, is installed on the inner central portion of the upper wall of the reaction chamber 3. A heater 6 for heating the substrate 4 through the susceptor 5 is disposed outside the upper wall of the reaction chamber 3 and facing the susceptor 5. A support shaft (not shown) or the like is connected to the center of the susceptor 5 having a circular planar shape. The susceptor 5 can be rotated in the horizontal direction by rotating the support shaft.

  A plurality of reflectors 10 are arranged outside the bottom wall of the reaction chamber 3 so as to surround the gas supply pipe 30. The plurality of reflectors 10 are arranged at a position facing the substrate 4 (or the susceptor 5) so as to be arranged in a plurality of rows (two rows in FIG. 31) concentrically around the central portion of the susceptor 5. The planar shape of the reflector 10 is a quadrangular shape (for example, a square shape or a rectangular shape). In the processing apparatus 1 shown in FIG. 31, the rotating shaft 12 of the reflector 10 intersects the flow direction of the reaction gas supplied from the gas supply pipe 30 into the reaction chamber 3 (the circumference of the circle in which the reflectors 10 are arranged). The reflector 10 is arranged so as to extend in a direction along the direction of. The reflector 10 is rotatable in the direction indicated by the arrow 13 around the rotation shaft 12. Also with the processing apparatus 1 having such a configuration, the same effect as that of the fourth embodiment of the processing apparatus according to the present invention shown in FIGS. 12 and 13 can be obtained.

  The processing method using the processing apparatus 1 shown in FIG. 31 is basically the same as the processing method using the processing apparatus 1 shown in FIGS.

  Further, the configuration of the reflector 10 is an arbitrary configuration other than the configuration shown in FIG. 31 (specifically, the configuration of the reflector 10 in any of the processing apparatuses 1 of the fourth to sixth embodiments of the present application). Can be used. Even if it does in this way, the effect similar to each processing apparatus 1 of Embodiment 4-Embodiment 6 of this application can be acquired.

(Embodiment 13)
FIG. 32 is a schematic sectional view showing Embodiment 13 of the processing apparatus according to the present invention. A thirteenth embodiment of the processing apparatus according to the present invention will be described with reference to FIG. FIG. 32 shows a cross section similar to the cross-sectional schematic diagram shown in FIG.

  Referring to FIG. 32, the processing apparatus 1 has a configuration in which the surface to be processed of the substrate that is the processing target is directed downward, similarly to the processing apparatus shown in FIG. 30. The processing apparatus 1 is configured such that the processing apparatus shown in FIGS. 18 to 20 is turned upside down. Specifically, the processing apparatus 1 is a vapor phase growth apparatus and basically includes the same configuration as the processing apparatus 1 shown in FIG. 30, but the heat resistance changing member is not the reflector 10 but the heat insulating member 40. Is different. That is, in the processing apparatus 1 shown in FIG. 32, the gantry 50 is disposed at a position below (outside) the bottom wall of the reaction chamber 3 and facing the susceptor 5, and a plurality of heat insulators are provided on the gantry 50. A heat insulating member 40 in which the blocks 42 are stacked is disposed at a position facing the susceptor 5. As a material of the heat insulating member 40, for example, graphite is used. Further, in the heat insulating member 40, the heat insulating block 42 is arranged so that the number of stacked heat insulating blocks 42 gradually decreases from the upstream side to the downstream side in the reaction gas flow direction indicated by the arrow 8. Yes. That is, the thickness of the heat insulating member 40 when viewed from the susceptor 5 is locally changed. As a result, the thickness of the heat insulating member 40 viewed from the substrate or susceptor 5 side gradually decreases from the upstream side to the downstream side in the flow direction of the reaction gas. In addition, in the direction (width direction) perpendicular to the flow direction of the reaction gas, the number of stacked heat insulator blocks 42 (thickness of the heat insulating member 40) at a predetermined position in the flow direction is the same.

  Also with the processing apparatus 1 having such a configuration, the same effect as the processing apparatus 1 shown in FIG. 30 can be obtained. Furthermore, the effect similar to the effect obtained by the processing apparatus 1 shown in FIGS. 18-20 can be acquired by using the heat insulation member 40. FIG. Moreover, you may use the heat insulation member 40 in the processing apparatus 1 shown in FIGS.

(Embodiment 14)
FIG. 33 is a schematic sectional view showing Embodiment 14 of a processing apparatus according to the present invention. A fourteenth embodiment of a processing apparatus according to the present invention will be described with reference to FIG. FIG. 33 shows a cross section similar to the schematic cross section shown in FIG.

  Referring to FIG. 33, similarly to the processing apparatus shown in FIG. 31, processing apparatus 1 has a configuration in which a surface to be processed of a substrate that is a processing target is directed downward (so-called face-down configuration). . The processing apparatus 1 is configured such that the processing apparatus shown in FIGS. 26 and 27 is turned upside down. Specifically, the processing apparatus 1 basically has the same configuration as that of the processing apparatus 1 shown in FIG. 31 except that the heat resistance changing member includes a heat insulating member 40 instead of the reflector 10. That is, in the processing apparatus 1 shown in FIG. 33, the plurality of heat insulator blocks 42 concentrically stacked on the outside of the bottom wall of the reaction chamber 3 having a circular planar shape and facing the susceptor 5. The heat insulating member 40 is arranged on the mount 50. Further, in the heat insulating member 40, the heat insulating block 42 is gradually stacked from the upstream side toward the downstream side in the flow direction of the reaction gas indicated by the arrow 34 (that is, from the central side to the outer peripheral side of the susceptor 5). The insulator block 42 is arranged so that the number increases. As a result, the thickness of the heat insulating member 40 as viewed from the substrate 4 or the susceptor 5 side gradually increases from the upstream side to the downstream side in the reaction gas flow direction (from the center side of the susceptor 5 toward the outer peripheral side). It is getting thicker. That is, the thickness of the heat insulating member 40 when viewed from the susceptor 5 is locally changed.

  Also with the processing apparatus 1 having such a configuration, the same effect as that obtained by the processing apparatus 1 shown in FIG. 31 or FIG. 26 and FIG. 27 can be obtained.

  It should be noted that the number of stacked heat insulator blocks 42 (thickness of the heat insulating member 40) at a predetermined position in the direction perpendicular to the flow direction of the reaction gas (the concentric circumferential direction in which the heat insulator blocks 42 are stacked) is the same. Yes. The heat insulator block 42 has a so-called bent rod-like shape in which concentric circles are divided at a plurality of locations. Therefore, the amount (thickness) of the heat insulator block for each direction when viewed from the center of the susceptor 5 is changed by changing the number of stacked heat insulator blocks 42 depending on the direction when viewed from the center of the susceptor 5. Can also be changed. Alternatively, the heat insulating member 40 may be configured by preparing a plurality of sizes of the ring-shaped heat insulating block 42. Moreover, you may use the heat insulation member 40 in the processing apparatus 1 shown in FIG. 28 and FIG.

  In the above-described embodiment, the substrate 4 is shown as an example of the processing target. However, any material can be used as the processing target as long as it is a target for processing using a reactive gas. In addition to the film forming process, the process using the reactive gas may be performed using an arbitrary process such as an etching process as long as the process uses the reactive gas.

  The embodiment disclosed this time should be considered as illustrative in all points and not restrictive. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

  The present invention is suitably used for a processing apparatus and a processing method using a reactive gas, particularly a vapor phase growth apparatus and a film forming method using a reactive gas.

It is a plane schematic diagram which shows Embodiment 1 of the processing apparatus according to this invention. It is a cross-sectional schematic diagram in line segment II-II of FIG. It is a plane schematic diagram which shows the example of the reflector assembly member installed in the processing apparatus according to this invention. It is a plane schematic diagram which shows the other example of the reflector aggregate member installed in the processing apparatus according to this invention. It is a flowchart for demonstrating the processing method using the processing apparatus shown in FIG. 1 and FIG. It is a plane schematic diagram which shows the modification of Embodiment 1 of the processing apparatus shown in FIG. 1 and FIG. It is a plane schematic diagram which shows Embodiment 2 of the processing apparatus according to this invention. It is a cross-sectional schematic diagram in line segment VIII-VIII of FIG. FIG. 9 is a schematic plan view illustrating a modification of the second embodiment of the processing apparatus illustrated in FIGS. 7 and 8. It is a plane schematic diagram which shows Embodiment 3 of the processing apparatus according to this invention. It is a cross-sectional schematic diagram in line segment XI-XI of FIG. It is a plane schematic diagram which shows Embodiment 4 of the processing apparatus according to this invention. It is a cross-sectional schematic diagram in line segment XIII-XIII of FIG. It is a plane schematic diagram which shows Embodiment 5 of the processing apparatus according to this invention. It is a cross-sectional schematic diagram in line segment XV-XV of FIG. It is a plane schematic diagram which shows Embodiment 6 of the processing apparatus according to this invention. It is a cross-sectional schematic diagram in the line segment XVII-XVII of FIG. It is a plane schematic diagram which shows Embodiment 7 of the processing apparatus according to this invention. It is a cross-sectional schematic diagram in the line segment XIX-XIX of FIG. It is the schematic diagram seen from the downstream of the flow direction of the reaction gas shown by the arrow 8 of the processing apparatus shown in FIG. It is a front schematic diagram which shows the modification of Embodiment 7 of the processing apparatus shown in FIGS. It is a plane schematic diagram which shows Embodiment 8 of the processing apparatus according to this invention. It is a cross-sectional schematic diagram in line segment XXIII-XXIII of FIG. It is a cross-sectional schematic diagram in line segment XXIV-XXIV of FIG. It is a cross-sectional schematic diagram which shows the modification of Embodiment 8 of the processing apparatus shown in FIGS. It is a plane schematic diagram which shows Embodiment 9 of the processing apparatus according to this invention. It is a cross-sectional schematic diagram in line segment XXVII-XXVII of FIG. It is a plane schematic diagram which shows Embodiment 10 of the processing apparatus according to this invention. It is a cross-sectional schematic diagram in line segment XXIX-XXIX of FIG. It is a cross-sectional schematic diagram which shows Embodiment 11 of the processing apparatus according to this invention. It is a cross-sectional schematic diagram which shows Embodiment 12 of the processing apparatus according to this invention. It is a cross-sectional schematic diagram which shows Embodiment 13 of the processing apparatus according to this invention. It is a cross-sectional schematic diagram which shows Embodiment 14 of the processing apparatus according to this invention.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 Processing apparatus, 3 reaction chambers, 4 substrates, 5 susceptors, 6 heaters, 8, 13, 15, 16, 34 arrows, 10, 10a to 10e reflectors, 12 rotating shafts, 14 centers, 20 reflector assembly members, 22 support members , 23 opening, 24 shaft, 25 opening, 30 gas supply pipe, 32 gas exhaust pipe, 40 heat insulating member, 42 heat insulating block, 43 heat insulating base, 44 through hole, 45 filler, 50 mount.

Claims (9)

A reaction chamber;
Inside the reaction chamber, a heating member for heating a processing object to be processed using a reaction gas;
A processing apparatus comprising: a heat resistance changing member that locally changes an amount of heat conducted from the inside of the reaction chamber to the outside when the processing object is heated by the heating member.   The processing apparatus according to claim 1, wherein the thermal resistance changing member includes a reflector that changes a traveling direction of a radiant energy flux emitted from the inside of the reaction chamber to the outside. A holding member for holding the object to be processed inside the reaction chamber;
A plurality of the reflectors are installed at positions facing the holding member,
The processing apparatus according to claim 1, wherein the plurality of reflectors are arranged in order from an upstream side to a downstream side in a flow direction of the reaction gas flowing through the reaction chamber. A holding member for holding the object to be processed inside the reaction chamber;
A plurality of the reflectors are installed at positions facing the holding member,
The processing apparatus according to claim 1, wherein the plurality of reflectors are arranged so as to be arranged in a direction intersecting a flow direction of the reaction gas flowing through the reaction chamber. A holding member for holding the object to be processed inside the reaction chamber;
The processing apparatus according to claim 1, wherein a plurality of the reflectors are arranged in a matrix at a position facing the holding member.   The processing apparatus according to claim 1, wherein the thermal resistance changing member includes a heat insulating member that prevents the progress of a radiant energy flux emitted from the inside of the reaction chamber to the outside. A holding member for holding the object to be processed inside the reaction chamber;
The processing apparatus according to claim 6, wherein the heat insulating member has a locally changed thickness when viewed from the holding member. A holding member for holding the object to be processed inside the reaction chamber;
The processing apparatus according to claim 6, wherein the heat insulating member has a locally changed density when viewed from the holding member. A processing method using the processing apparatus according to any one of claims 1 to 8,
Placing the object to be treated inside the reaction chamber;
Heating the treatment object to a treatment temperature;
A process step of supplying a reaction gas so as to come into contact with the heated object to be processed, and performing a process of forming a film on the surface of the object to be processed;
In the processing step, the thermal resistance changing member is disposed at a position facing the processing object.

Images