JP2018164095A - Processing device, processing method, and storage medium - Google Patents

Abstract

PROBLEM TO BE SOLVED: To monitor a supply-flow rate of a processing fluid in supply at a particular flow rate, and to monitor a supply-flow rate of supplying the processing fluid at a rising edge toward the particular flow rate.SOLUTION: A processing device according to an embodiment hereof comprises: a chamber; a nozzle; a measurement unit; an opening/closing unit; and a control unit. The chamber contains a workpiece. The nozzle is provided in the chamber, and serves to supply a processing fluid toward the workpiece. The measurement unit measures a supply-flow rate of the processing fluid supplied to the nozzle. The opening/closing unit serves to open and close a flow path of the processing fluid to be supplied to the nozzle. The control unit sends an opening/closing operation signal to cause the opening/closing unit to perform an opening/closing operation according to a recipe of information showing the detail of a process. In addition, after having sent the opening/closing operation signal to the opening/closing unit according to the recipe of information, the control unit starts to accumulate the supply-flow rate based on a result of measurement by the measurement unit. The control unit monitors the supply-flow rate through a cumulative amount as a result of the accumulation at the time of a rising edge toward a particular flow rate. At the time of supply at the particular flow rate, the control unit monitors the supply-flow rate through a measurement value actually measured by the measurement unit instead of the cumulative amount.SELECTED DRAWING: Figure 4

Description

  Embodiments disclosed herein relate to a processing device, a processing method, and a storage medium.

  2. Description of the Related Art Conventionally, there has been known a substrate processing apparatus for processing a substrate by supplying a processing liquid to a substrate such as a semiconductor wafer or a glass substrate from a nozzle provided in a chamber.

  By the way, the processing liquid needs to be supplied at a specific flow rate required for processing the substrate. For this reason, the substrate processing apparatus includes a flow meter in the processing liquid supply path, and supplies the processing liquid so that the processing liquid is stably supplied at the above-described specific flow rate based on the measurement result of the flow meter. Some perform control (see, for example, Patent Document 1).

JP 2003-234280 A

  The technique described in Patent Document 1 monitors the supply flow rate when supplying a specific flow rate of processing liquid, and the processing liquid at the time of rising toward the specific flow rate, such as when the processing liquid starts to be supplied to the substrate. The supply flow rate was not monitored. For this reason, even if there is a variation between the substrates in the supply flow rate of the processing liquid at the time of rising, it was not understood. If there is a variation in the supply flow rate between the substrates, there is a risk of causing variations in the substrate processing results.

  Such a problem is not limited to a liquid processing solution, and is a problem common to all processing fluids including a gaseous state. In addition to the substrate processing apparatus, it is also a problem common to all processing apparatuses that process a target object by supplying a processing fluid to the target object.

  One aspect of an embodiment is a processing apparatus, a processing method, and a storage medium that can monitor the supply flow rate of a processing fluid when supplying a specific flow rate, and monitor the supply flow rate of the processing fluid when rising toward the specific flow rate The purpose is to provide.

  A processing apparatus according to an aspect of an embodiment includes a chamber, a nozzle, a measurement unit, an opening / closing unit, and a control unit. The chamber accommodates an object to be processed. The nozzle is provided in the chamber and supplies a processing fluid toward the object to be processed. The measurement unit measures the supply flow rate of the processing fluid supplied to the nozzle. The opening / closing unit opens and closes the flow path of the processing fluid supplied to the nozzle. A control part sends the opening / closing operation signal which makes an opening / closing part perform opening / closing operation | movement according to the recipe information which shows the content of a process. In addition, the control unit sends an opening / closing operation signal to the opening / closing unit according to the recipe information, and then starts integration of the supply flow rate based on the measurement result of the measurement unit. The supply flow rate is monitored by the amount, and at the time of supplying the specific flow rate, the supply flow rate is monitored by an actual value obtained by the measurement unit that is not the integrated amount.

  According to one aspect of the embodiment, it is possible to monitor the supply flow rate of the processing fluid when supplying the specific flow rate, and to monitor the supply flow rate of the processing fluid when rising toward the specific flow rate.

FIG. 1 is a diagram showing a schematic configuration of a substrate processing system according to the present embodiment. FIG. 2 is a diagram showing a schematic configuration of the processing unit. FIG. 3A is a schematic explanatory diagram (part 1) of the flow rate monitoring method according to the embodiment. FIG. 3B is a schematic explanatory diagram (part 2) of the flow rate monitoring method according to the embodiment. FIG. 3C is a schematic explanatory diagram (part 3) of the flow rate monitoring method according to the embodiment. FIG. 4 is a block diagram of the control device. FIG. 5 is a flowchart showing a processing procedure of a series of substrate processing executed in the processing unit. FIG. 6A is an explanatory diagram (part 1) when the control unit functions as a monitoring unit and a determination unit. FIG. 6B is an explanatory diagram (part 2) when the control unit functions as a monitoring unit and a determination unit. FIG. 6C is an explanatory diagram (part 3) when the control unit functions as a monitoring unit and a determination unit. FIG. 7 is a flowchart illustrating a processing procedure of monitoring determination processing executed when the control unit functions as a monitoring unit and a determination unit.

  Hereinafter, embodiments of a processing device, a processing method, and a storage medium disclosed in the present application will be described in detail with reference to the accompanying drawings. In addition, this invention is not limited by embodiment shown below. In the following, a case where the object to be processed is a substrate and the processing apparatus is a substrate processing system will be described as an example.

  FIG. 1 is a diagram showing a schematic configuration of a substrate processing system according to the present embodiment. In the following, in order to clarify the positional relationship, the X axis, the Y axis, and the Z axis that are orthogonal to each other are defined, and the positive direction of the Z axis is the vertically upward direction.

  As shown in FIG. 1, the substrate processing system 1 includes a carry-in / out station 2 and a processing station 3. The carry-in / out station 2 and the processing station 3 are provided adjacent to each other.

  The carry-in / out station 2 includes a carrier placement unit 11 and a transport unit 12. A plurality of carriers C that accommodate a plurality of substrates, in this embodiment a semiconductor wafer (hereinafter referred to as a wafer W) in a horizontal state, are placed on the carrier placement unit 11.

  The transport unit 12 is provided adjacent to the carrier placement unit 11 and includes a substrate transport device 13 and a delivery unit 14 inside. The substrate transfer device 13 includes a wafer holding mechanism that holds the wafer W. Further, the substrate transfer device 13 can move in the horizontal direction and the vertical direction and can turn around the vertical axis, and transfers the wafer W between the carrier C and the delivery unit 14 using the wafer holding mechanism. Do.

  The processing station 3 is provided adjacent to the transfer unit 12. The processing station 3 includes a transport unit 15 and a plurality of processing units 16. The plurality of processing units 16 are provided side by side on the transport unit 15.

  The transport unit 15 includes a substrate transport device 17 inside. The substrate transfer device 17 includes a wafer holding mechanism that holds the wafer W. Further, the substrate transfer device 17 can move in the horizontal direction and the vertical direction and can turn around the vertical axis, and transfers the wafer W between the delivery unit 14 and the processing unit 16 using a wafer holding mechanism. I do.

  The processing unit 16 performs predetermined substrate processing on the wafer W transferred by the substrate transfer device 17.

  Further, the substrate processing system 1 includes a control device 4. The control device 4 is a computer, for example, and includes a control unit 18 and a storage unit 19. The storage unit 19 stores a program for controlling various processes executed in the substrate processing system 1. The control unit 18 controls the operation of the substrate processing system 1 by reading and executing the program stored in the storage unit 19.

  Such a program may be recorded on a computer-readable storage medium, and may be installed in the storage unit 19 of the control device 4 from the storage medium. Examples of the computer-readable storage medium include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical disk (MO), and a memory card.

  In the substrate processing system 1 configured as described above, first, the substrate transfer device 13 of the loading / unloading station 2 takes out the wafer W from the carrier C placed on the carrier placement unit 11 and receives the taken-out wafer W. Place on the transfer section 14. The wafer W placed on the delivery unit 14 is taken out from the delivery unit 14 by the substrate transfer device 17 of the processing station 3 and carried into the processing unit 16.

  The wafer W carried into the processing unit 16 is processed by the processing unit 16, then unloaded from the processing unit 16 by the substrate transfer device 17, and placed on the delivery unit 14. Then, the processed wafer W placed on the delivery unit 14 is returned to the carrier C of the carrier placement unit 11 by the substrate transfer device 13.

  Next, a schematic configuration of the processing unit 16 will be described with reference to FIG. FIG. 2 is a diagram showing a schematic configuration of the processing unit 16.

  As shown in FIG. 2, the processing unit 16 includes a chamber 20, a substrate holding mechanism 30, a processing fluid supply unit 40, and a recovery cup 50.

  The chamber 20 accommodates the substrate holding mechanism 30, the processing fluid supply unit 40, and the recovery cup 50. An FFU (Fan Filter Unit) 21 is provided on the ceiling of the chamber 20. The FFU 21 forms a down flow in the chamber 20.

  The substrate holding mechanism 30 includes a holding unit 31, a support unit 32, and a driving unit 33. The holding unit 31 holds the wafer W horizontally. The support | pillar part 32 is a member extended in a perpendicular direction, a base end part is rotatably supported by the drive part 33, and supports the holding | maintenance part 31 horizontally in a front-end | tip part. The drive unit 33 rotates the column unit 32 around the vertical axis. The substrate holding mechanism 30 rotates the support unit 31 by rotating the support unit 32 using the drive unit 33, thereby rotating the wafer W held by the support unit 31. .

  The processing fluid supply unit 40 supplies a processing fluid to the wafer W. The processing fluid supply unit 40 is connected to a processing fluid supply source 70.

  The collection cup 50 is disposed so as to surround the holding unit 31, and collects the processing liquid scattered from the wafer W by the rotation of the holding unit 31. A drain port 51 is formed at the bottom of the recovery cup 50, and the processing liquid collected by the recovery cup 50 is discharged from the drain port 51 to the outside of the processing unit 16. Further, an exhaust port 52 for discharging the gas supplied from the FFU 21 to the outside of the processing unit 16 is formed at the bottom of the recovery cup 50.

  Next, an outline of a processing fluid flow rate monitoring method according to the present embodiment will be described with reference to FIGS. 3A to 3C. 3A to 3C are schematic explanatory views (No. 1) to (No. 3) of the flow rate monitoring method according to the embodiment.

  In the following description, the case where the processing fluid supplied by the processing fluid supply unit 40 is a liquid processing liquid will be described as a main example. Accordingly, the processing liquid supply flow rate by the processing fluid supply unit 40 is referred to as “discharge flow rate”.

  Further, in each drawing referred to hereinafter, the change in the discharge flow rate may be indicated by a waveform, but this waveform is mainly indicated by a trapezoidal wave. However, this is merely for convenience of explanation, and does not limit the actual change in the discharge flow rate.

  As shown in FIG. 3A, in the flow rate monitoring method according to the present embodiment, the discharge flow rate of the processing liquid is not limited to the time of stable supply (see the portion surrounded by the broken-line rectangle S), so-called rising or falling. It was decided to monitor while showing a transitional change.

  Here, the rise or fall is a temporal transition of the discharge flow rate when the discharge flow rate is changed from the first flow rate to the second flow rate. For example, “rising” (see the portion surrounded by a broken-line rectangle R) is a temporal transition of the discharge flow rate when the discharge flow rate is changed from “0” to a predetermined “target flow rate”. The “target flow rate” corresponds to the “specific flow rate” required for processing the wafer W. Further, “falling” (refer to a portion surrounded by a broken-line rectangle F) is a temporal transition of the discharge flow rate when the discharge flow rate is changed from “target flow rate” to “0”.

  By monitoring such rising and falling, it is possible to detect an inter-device difference (so-called variation) of the processing fluid supply unit 40 caused by, for example, device manufacturing error or aging deterioration that appears at the time of rising or falling. And the presence or absence of abnormality in the processing fluid supply part 40 can be determined from the result.

  The flow rate monitoring method according to the present embodiment will be described more specifically with reference to FIGS. 3B and 3C. In the following, description will be given mainly by taking the case of monitoring “rising” as an example.

  As shown in FIG. 3B, in the flow rate monitoring method according to the present embodiment, first, a target elapsed time and a target integrated amount corresponding to the target elapsed time are set in advance. The target elapsed time and the target integrated amount are reference values for the elapsed time and the integrated amount from the start of the discharge of the processing liquid, respectively, and serve as indexes for determining whether there is an abnormality in the rising of the discharge flow rate in the processing fluid supply unit 40. .

  Specifically, the target integrated amount is set as follows, for example, based on the required amount of the processing liquid that is required from the start of the discharge of the processing liquid until the processing liquid reaches the surface of the wafer W. As shown in FIG. 3C, the processing fluid supply unit 40 includes a nozzle 41, an arm 42 that horizontally supports the nozzle 41, and a turning lift mechanism 43 that turns and lifts the arm 42.

  Each of the nozzle 41, the arm 42, and the swivel raising / lowering mechanism 43 is penetrated by a supply pipe 44, and a processing liquid is supplied to the supply pipe 44 from a processing fluid supply source 70 through a valve 60. The valve 60 corresponds to an example of an opening / closing unit, and opens / closes the flow path of the processing liquid supplied to the nozzle 41 in accordance with an “open / close operation signal” sent from the control unit 18. The processing liquid supplied to the supply pipe 44 by opening the valve 60 sequentially passes through the inside of the swivel raising / lowering mechanism 43, the arm 42, and the nozzle 41, and from the nozzle 41 to the holding member 31 a of the holding unit 31. The ink is discharged toward the wafer W held horizontally while being slightly separated from the upper surface.

  The target integrated amount is set based on the volume of the supply pipe 44 described above, for example. Furthermore, the distance d from the tip of the nozzle 41 to the surface of the wafer W and the diameter of the supply pipe 44 (the thickness of the discharged processing liquid) may be taken into consideration. Thereby, the necessary amount of the processing liquid required from the start of the discharge of the processing liquid until the processing liquid reaches the surface of the wafer W can be derived.

  Here, the discharge start of the processing liquid refers to the timing at which the valve 60 receives a discharge start signal sent from the control unit 18, for example. On the other hand, the discharge end refers to the timing at which the valve 60 receives the discharge end signal sent from the control unit 18. The discharge start signal and the discharge end signal correspond to an example of the aforementioned “open / close operation signal”.

  In the flow rate monitoring method according to the present embodiment, the above-described rising is performed by monitoring the actual discharge flow rate of the nozzle 41 or the deviation amount of the elapsed time with respect to the preset target integrated amount or target elapsed time. The presence or absence of an abnormality is determined. Details of the monitoring of the deviation amount will be described later with reference to FIGS. 6A and 6B.

  Note that the actual discharge flow rate of the nozzle 41 is measured by the measurement unit 80. The measurement unit 80 is, for example, a flow meter, and is provided between the processing fluid supply source 70 and the valve 60, for example, as shown in FIG. 3C.

  Returning to the description of FIG. 3B. Further, in the flow rate monitoring method according to the present embodiment, the instantaneous value of the discharge flow rate when a predetermined elapsed time shorter than the target elapsed time has elapsed from the start of supply of the processing liquid is also monitored. The predetermined elapsed time shorter than the target elapsed time is an elapsed time slightly before the target elapsed time shown in FIG. 3B, for example.

  In the flow rate monitoring method according to the present embodiment, by monitoring the instantaneous value of the discharge flow rate at such timing, whether the discharge flow rate normally rises toward reaching the target flow rate during stable supply, in other words, the discharge flow rate Monitor the rise for deviation from the allowable range. Details of such instantaneous value monitoring will be described later with reference to FIG. 6C.

  For convenience of the following description, FIG. 3B shows an example of the target elapsed time, the target integrated amount, and the like. As shown in FIG. 3B, in this embodiment, the target elapsed time is “1.5 seconds”, the target integrated amount is “25 ml”, the target flow rate is “1400 ml”, and the target discharge time is “10 seconds”. To do. The target discharge time is the time from the above “discharge start” to “discharge end”. In addition, each numerical value shown to FIG. 3B is an example to the last, and the numerical value actually set is not limited.

  Next, the control device 4 will be described more specifically with reference to FIG. FIG. 4 is a block diagram of the control device 4. In FIG. 4, constituent elements necessary for explaining the characteristics of the present embodiment are represented by functional blocks, and descriptions of general constituent elements are omitted.

  In other words, each component illustrated in FIG. 4 is functionally conceptual and does not necessarily need to be physically configured as illustrated. For example, the specific form of distribution / integration of each functional block is not limited to the one shown in the figure, and all or a part thereof is functionally or physically distributed in an arbitrary unit according to various loads or usage conditions.・ It can be integrated and configured.

  Furthermore, each processing function performed in each functional block of the control device 4 is realized in whole or in part by a processor such as a CPU (Central Processing Unit) and a program that is analyzed and executed by the processor. Alternatively, it can be realized as hardware by wired logic.

  First, as already described, the control device 4 includes a control unit 18 and a storage unit 19 (see FIG. 1). The control unit 18 is, for example, a CPU, and functions as, for example, the functional blocks 18a to 18c shown in FIG. 4 by reading out and executing a program (not shown) stored in the storage unit 19. Next, the functional blocks 18a to 18c will be described.

  As shown in FIG. 4, for example, the control unit 18 includes a substrate processing execution unit 18a, a monitoring unit 18b, and a determination unit 18c. The storage unit 19 stores recipe information 19a.

  When the control unit 18 functions as the substrate processing execution unit 18a, the processing unit 16 is controlled according to the recipe information 19a stored in the storage unit 19 to supply a chemical to the wafer W. A series of substrate processes including a rinsing process for supplying a rinsing liquid and a drying process for drying the wafer W are performed.

  At this time, the control unit 18 sends an opening / closing operation signal for causing the valve 60 of the processing fluid supply unit 40 to perform an opening / closing operation according to the recipe information 19a, and sends a predetermined processing liquid to the processing fluid supply unit 40 according to the contents of the substrate processing. To discharge. The discharge flow rate by the processing fluid supply unit 40 is measured by the measurement unit 80, and the measurement result is notified to the monitoring unit 18b each time.

  The recipe information 19a is information indicating the contents of substrate processing. Specifically, the contents of each process executed by the processing unit 16 during the substrate processing are information registered in advance in the order of the processing sequence. Here, the content of each process also includes the type of processing liquid to be discharged to the processing fluid supply unit 40 according to the content of the substrate processing.

  Here, with reference to FIG. 5, a processing procedure of a series of substrate processing controlled by the control unit 18 and executed in the processing unit 16 will be described. FIG. 5 is a flowchart showing a processing procedure of a series of substrate processing executed in the processing unit 16.

  As shown in FIG. 5, in the processing unit 16, a chemical solution process (step S101), a rinse process (step S102), and a drying process (step S103) are executed in this order.

  In the chemical processing, DHF (dilute hydrofluoric acid) is discharged from the nozzle 41 to the wafer W. In the rinsing process, DIW (pure water) is discharged from the nozzle 41 to the wafer W, and DHF on the wafer W is washed away. In the drying process, IPA (isopropyl alcohol), which is a kind of organic solvent, is discharged from the nozzle 41 to the wafer W, DIW on the wafer W is removed, and the wafer W is dried.

  Each of the processing liquids such as DHF, DIW, and IPA is stored in an individual processing fluid supply source 70 and is discharged from the nozzle 41 by opening / closing an individual valve 60. Although not shown in FIG. 5, after the drying process is completed, a replacement process for replacing the wafer W in the chamber 20 is executed.

  Returning to the description of FIG. 4, the case where the control unit 18 functions as the monitoring unit 18b and the determination unit 18c will be described. When the control unit 18 functions as the monitoring unit 18b, the control unit 18 monitors at least the rise of the discharge flow rate based on the measurement result of the measurement unit 80.

  Specifically, the control unit 18 sends an opening / closing operation signal to the valve 60 of the processing fluid supply unit 40 according to the recipe information 19a, and then starts to calculate the supply flow rate based on the measurement result of the measurement unit 80, and calculates it. Monitor the rise of the supply flow rate with the integrated amount. In addition, the control unit 18 monitors the supply flow rate with an actual measurement value by the measurement unit 80 when supplying the specific flow rate. Moreover, when the control part 18 functions as the determination part 18c, it determines the presence or absence of abnormality in the process fluid supply part 40 based on the monitoring result of the monitoring part 18b.

  The case where the control unit 18 functions as the monitoring unit 18b and the determination unit 18c will be described more specifically with reference to FIGS. 6A to 6C. 6A to 6C are explanatory diagrams (No. 1) to (No. 3) when the control unit 18 functions as the monitoring unit 18b and the determination unit 18c. The “integrated value” in FIG. 6A and FIG. 6B corresponds to the integrated amount calculated by the control unit 18.

  As shown in FIG. 6A, when the control unit 18 functions as the monitoring unit 18b and the determination unit 18c, for example, the control unit 18 calculates an integrated value of the discharge flow rate of the processing liquid at a predetermined period i1 from the start of discharge. (Step S1). The period i1 is preferably about 10 milliseconds to 100 milliseconds, for example.

  And the control part 18 measures the time until the integration value of step S1 reaches | attains the predetermined target integration amount (step S2). Here, the time until the target integrated amount is reached is defined as the actual elapsed time t1.

  And the control part 18 monitors the deviation | shift amount of measured actual elapsed time t1 and target elapsed time (step S3), and determines the presence or absence of abnormality in the process fluid supply part 40 based on the monitoring result.

  For example, the control unit 18 corrects the opening / closing timing of the valve 60 if the deviation amount of the arrival time to the target integrated amount is within a predetermined range that can be corrected by the opening / closing timing of the valve 60. If it is not within the correctable range, for example, a predetermined process at the time of abnormality determination such as outputting a warning to an output device such as a display unit or stopping the substrate processing is executed.

  As another example of monitoring the amount of deviation, as shown in FIG. 6B, the control unit 18 calculates an integrated value at a predetermined target elapsed time of the discharge flow rate of the processing liquid (step S1 ′), and this integration is performed. The amount of deviation between the value and the predetermined target integrated amount may be monitored (step S3 ′). Even in such a case, it is possible to determine whether or not there is an abnormality in the processing fluid supply unit 40 based on the degree of deviation.

  Further, not only the deviation amount based on the integrated value of the discharge flow rate shown in FIGS. 6A and 6B but also the control unit 18 as shown in FIG. 6C, the predetermined elapsed time shorter than the target elapsed time from the start of supply of the treatment liquid. In addition, the instantaneous value of the discharge flow rate when the time elapses is also monitored (step S4). Here, the predetermined elapsed time is time t2.

  Specifically, as shown in FIG. 6C, the control unit 18 samples the instantaneous value of the discharge flow rate a plurality of times at a predetermined period i2 from time t2 (step S41). The period i2 is preferably, for example, about 10 milliseconds to 50 milliseconds.

  And the control part 18 calculates the average value of the sampled instantaneous value (step S42), and determines whether the calculated average value exists in the predetermined range on the basis of the target flow volume, for example (step S43). In addition, by taking the average value of the instantaneous values, a sharp change in the discharge flow rate can be smoothed, and a gentle abnormality determination can be performed.

  For example, it is assumed that the predetermined elapsed time is 1 second and the predetermined range based on the target flow rate (1400 ml) is ± 1% of the target flow rate. In such a case, if the average value of instantaneous values sampled one second after the start of discharge is in the range of 1386 ml to 1414 ml, the control unit 18 performs normal determination that there is no abnormality in the processing fluid supply unit 40, and a series of substrates Continue execution of the process.

  If the average value of the sampled instantaneous values is not within the above range, the control unit 18 executes a predetermined process at the time of abnormality determination as described above.

  Next, a processing procedure of monitoring determination processing executed when the control unit 18 functions as the monitoring unit 18b and the determination unit 18c will be described with reference to FIG.

  FIG. 7 is a flowchart illustrating a processing procedure of monitoring determination processing executed when the control unit 18 functions as the monitoring unit 18b and the determination unit 18c. FIG. 7 shows a processing procedure in the case of mainly monitoring the discharge flow rate at the time of rising toward the specific flow rate, and illustration of the case of monitoring the discharge flow rate at the time of supplying the specific flow rate is omitted. First, the control unit 18 monitors the deviation amount at the rise of the discharge flow rate (step S201). The deviation amount is a deviation amount based on the integrated value of the discharge flow rate described above.

  And the control part 18 determines whether there exists any deviation | shift amount (step S202). Here, when there is a deviation amount (step S202, Yes), the control unit 18 determines whether or not the deviation amount can be corrected (step S203).

  Here, when correction is possible (step S203, Yes), the control unit 18 corrects the opening / closing timing of the valve 60, for example (step S204), and shifts the control to step S205. If correction is impossible (No at Step S203), the control unit 18 determines that the processing fluid supply unit 40 is abnormal (Step S208), and ends the process.

  On the other hand, when there is no deviation (No at Step S202), the control unit 18 monitors the average value of the instantaneous values at the rise of the discharge flow rate (Step S205). Then, it is determined whether or not the average value is within a predetermined range based on the target flow rate (step S206).

  Here, when the average value of the instantaneous values is within the predetermined range (step S206, Yes), the control unit 18 determines that the processing fluid supply unit 40 is normal (step S207), and ends the process. If not within the predetermined range (No at Step S206), the control unit 18 determines that the processing fluid supply unit 40 is abnormal (Step S208), and ends the process.

  Note that the processing procedure illustrated in FIG. 7 may be repeatedly performed each time the processing fluid is discharged by the processing fluid supply unit 40 during execution of a series of substrate processing of the substrate processing system 1 during actual operation.

  Therefore, taking the flowchart shown in FIG. 5 as an example, each time the chemical solution process in step S101, the rinse process in step S102, and the drying process in step S103 are executed, each of step S101, step S102, and step S103 is performed. Accordingly, the processing procedure of FIG. 7 may be executed.

  As a result, for example, it is possible to correct a deviation amount or determine an abnormality corresponding to the dynamic change of the deviation amount during actual operation.

  Further, the processing procedure of FIG. 7 may be executed not only during the actual operation but also in the evaluation stage and the initial setting stage before the actual operation of the substrate processing system 1. Thereby, in the evaluation stage and the initial setting stage, when it is found that the deviation amount is within a predetermined range that requires correction, for example, the control unit 18 controls the processing fluid supply unit 40 during the actual operation. Initial setting or the like can be performed in advance so that the discharge of the processing liquid is executed at different timings according to the amount of deviation.

  As described above, the substrate processing system 1 according to the present embodiment (corresponding to an example of “processing apparatus”) includes the chamber 20, the nozzle 41, the measurement unit 80, and the valve 60 (an example of “opening / closing unit”). And a control unit 18.

  The chamber 20 accommodates a wafer W (corresponding to an example of “object to be processed”). The nozzle 41 is provided in the chamber 20 and supplies a processing liquid (corresponding to an example of “processing fluid”) toward the wafer W. The measuring unit 80 measures the discharge flow rate of the processing liquid supplied to the nozzle 41 (corresponding to an example of “supply flow rate”). The valve 60 opens and closes the flow path of the processing liquid supplied to the nozzle 41. The control unit 18 sends an opening / closing operation signal for causing the valve 60 to perform an opening / closing operation according to the recipe information 19a indicating the content of the substrate processing (corresponding to an example of “processing”).

  In addition, after sending an opening / closing operation signal to the valve 60 according to the recipe information 19a, the control unit 18 starts integration of the supply flow rate based on the measurement result of the measurement unit 80, and monitors the rise of the supply flow rate with the calculated integration amount. At the same time, when supplying the specific flow rate, the supply flow rate is monitored by an actual measurement value by the measurement unit 80.

  Therefore, according to the substrate processing system 1 according to the present embodiment, it is possible to monitor the supply flow rate of the processing liquid when supplying the specific flow rate and the supply flow rate of the processing liquid when rising toward the specific flow rate. .

  In the above-described embodiment, DHF is exemplified as the chemical solution, but other chemical solutions include, for example, SC1, SC2, SPM, resist, developer, silylating agent, and ozone water.

  Also, the rinse liquid is not limited to the above-described DIW. For example, when the contents of the rinse process include a process of supplying DIW to the wafer W and a process of replacing DIW on the wafer W with IPA, the IPA is also included in the rinse liquid.

  In the above-described embodiment, the description has been given mainly taking the rise of the discharge flow rate as an example, but the fall may be similarly monitored. When monitoring such a fall, for example, by detecting the amount of deviation from the target integrated amount described above, for example, the valve 60 may be discharged so that the processing liquid is always discharged to the wafer W for a certain amount and for a certain time. It is possible to control opening and closing.

  In the above-described embodiment, the description has been given mainly using the liquid processing liquid as an example. However, for example, N2 gas, which is a kind of inert gas, is used in a drying process or the like. When the gas is supplied from the nozzle 41, the above-described embodiment may be applied to the rising or falling of the gas supply flow rate.

  Further, in the above-described embodiment, the example in which the object to be processed is the wafer W has been described. However, the embodiment described above in general to the processing apparatus that processes the object to be processed by supplying a processing fluid to the object to be processed. May be applied.

  Further effects and modifications can be easily derived by those skilled in the art. Thus, the broader aspects of the present invention are not limited to the specific details and representative embodiments shown and described above. Accordingly, various modifications can be made without departing from the spirit or scope of the general inventive concept as defined by the appended claims and their equivalents.

W wafer 1 substrate processing system 4 control device 16 processing unit 18 control unit 19 storage unit 19a recipe information 20 chamber 31 holding unit 40 processing fluid supply unit 80 measurement unit

Claims (10)

A chamber for accommodating a workpiece;
A nozzle that is provided in the chamber and supplies a processing fluid toward the object to be processed;
A measurement unit for measuring a supply flow rate of the processing fluid supplied to the nozzle;
An opening and closing part for opening and closing the flow path of the processing fluid supplied to the nozzle;
A control unit for sending an opening / closing operation signal for causing the opening / closing unit to perform an opening / closing operation in accordance with recipe information indicating the content of processing,
The controller is
After sending the opening / closing operation signal to the opening / closing unit according to the recipe information, the integration of the supply flow rate is started based on the measurement result of the measurement unit, and at the time of rising toward the specific flow rate, the accumulated amount The processing apparatus is characterized in that the supply flow rate is monitored and the supply flow rate is monitored with an actual measurement value by the measurement unit that is not the integrated amount when the specific flow rate is supplied. The controller is
The actual elapsed time until the integrated amount reaches a preset target integrated amount is measured, and a deviation amount between the measured actual elapsed time and the target elapsed time corresponding to the target integrated amount is monitored. The processing apparatus according to claim 1. The controller is
The processing apparatus according to claim 1, wherein a deviation amount between the integrated amount at a preset target elapsed time and a target integrated amount corresponding to the target elapsed time is monitored. The target cumulative amount is
4. The method according to claim 2, wherein the processing fluid is set in advance based on a necessary amount of the processing fluid required from the start of supply of the processing fluid until the processing fluid reaches the surface of the object to be processed. Processing equipment. An arm that horizontally supports the nozzle, a swivel lift mechanism that swivels and lifts the arm, and a supply pipe that penetrates the nozzle, the arm, and the swivel lift mechanism,
The required amount is
The processing apparatus according to claim 4, wherein the processing apparatus is preset based on a volume of the supply pipe. The controller is
When a predetermined elapsed time shorter than the target elapsed time has elapsed since the start of the supply of the processing fluid, the instantaneous value of the supply flow rate is sampled a plurality of times at a predetermined cycle, and the average value of the sampled instantaneous values is the specified It is monitored whether it exists in the predetermined range on the basis of flow volume. The processing apparatus as described in any one of Claims 2-5 characterized by these. The controller is
When the amount of deviation before the actual operation of the processing apparatus is within a predetermined range that requires correction, during actual operation, the start of supply of the processing fluid from the nozzle is shifted according to the amount of deviation. The processing apparatus according to claim 2, wherein the processing apparatus is executed. The controller is
The processing apparatus according to any one of claims 1 to 7, wherein rising of the supply flow rate during actual operation of the processing apparatus is monitored each time the processing fluid is supplied to the nozzle. A chamber that accommodates an object to be processed; a nozzle that is provided in the chamber and supplies a processing fluid toward the object to be processed; and a measurement unit that measures a supply flow rate of the processing fluid supplied to the nozzle; Control using a processing device including an opening / closing unit that opens and closes the flow path of the processing fluid supplied to the nozzle, and sends an opening / closing operation signal for causing the opening / closing unit to perform an opening / closing operation according to recipe information indicating processing contents Including steps,
The control step includes
After sending the opening / closing operation signal to the opening / closing unit according to the recipe information, the integration of the supply flow rate is started based on the measurement result of the measurement unit, and at the time of rising toward the specific flow rate, the accumulated amount The processing method is characterized in that the supply flow rate is monitored and the supply flow rate is monitored with an actual measurement value by the measurement unit that is not the integrated amount when the specific flow rate is supplied. A computer-readable storage medium that runs on a computer and stores a program for controlling a processing device,
A storage medium characterized in that, when executed, the program causes a computer to control the processing device so that the processing method according to claim 9 is performed.

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