JP6635869B2 - Processing device, processing method, and storage medium - Google Patents

Description

  The disclosed embodiments relate to a processing device, a processing method, and a storage medium.

  BACKGROUND ART Conventionally, a substrate processing apparatus that processes a substrate by supplying a processing liquid to a substrate such as a semiconductor wafer or a glass substrate from a nozzle provided in a chamber has been known. Note that the substrate processing apparatus has a plurality of processing units, and a chamber is provided for each of the processing units.

  Meanwhile, the processing liquid needs to be supplied at a specific flow rate required for processing the substrate. For this reason, the substrate processing apparatus is provided with a flow meter in the processing liquid supply path, and based on the measurement result of the flow meter, supplies the processing liquid so that the processing liquid is stably supplied at the above-described specific flow rate. There is one that performs control (for example, see Patent Document 1).

JP 2003-234280 A

  The technique described in Patent Literature 1 monitors a supply flow rate when a specific flow rate of a processing liquid is supplied, and the time from when the processing liquid reaches the substrate until it stops reaching the substrate, in other words, when the processing liquid is supplied to the substrate. He did not monitor the time of contact. For this reason, even if the processing liquid varies between substrates during the time from when the processing liquid reaches the substrate to when it does not reach the substrate due to device manufacturing error or aging deterioration between the processing units, it cannot be recognized. If variation occurs between the substrates during the time from when the processing liquid reaches the substrate until the processing liquid no longer reaches the substrate, the processing result of the substrate may be varied.

  This problem is not limited to the liquid processing liquid, but is common to all processing fluids including gaseous ones. Further, the present invention is not limited to the substrate processing apparatus, and is a problem common to all processing apparatuses that process a target object by supplying a processing fluid to the target object.

  One embodiment of the present invention is a processing apparatus, a processing method, and a storage capable of preventing a variation in a processing result due to a variation in time from when a processing fluid reaches a processing target to when the processing fluid no longer reaches the processing target. The purpose is to provide a medium.

  A processing apparatus according to an aspect of an embodiment includes a chamber, a nozzle, a measurement unit, an opening / closing unit, and a control unit. The chamber houses the object to be processed. At least one nozzle is provided in the chamber, and supplies the processing fluid toward the object to be processed. The measurement unit measures a supply flow rate of the processing fluid supplied to the nozzle. The opening and closing unit opens and closes a flow path of the processing fluid supplied to the nozzle. The control unit outputs an opening operation signal for causing the opening / closing unit to perform the opening operation and a closing operation signal for causing the opening / closing unit to perform the closing operation at a preset time. Further, after outputting the opening operation signal, the control unit calculates the integrated amount of the processing fluid based on the measurement result of the measurement unit when the supply flow rate changes to the preset flow rate, and calculates the integrated amount of the processing fluid. Based on this, output time change processing is performed to change the time at which the opening operation signal or the closing operation signal is output from a preset time.

  According to an aspect of the embodiment, it is possible to prevent a variation in the processing result due to a variation in the time from when the processing fluid reaches the processing target to when the processing fluid no longer reaches the processing target.

FIG. 1 is a diagram illustrating a schematic configuration of a substrate processing system according to the present embodiment. FIG. 2 is a diagram illustrating a schematic configuration of the processing unit. FIG. 3A is a schematic explanatory diagram (part 1) of a flow monitoring method according to the embodiment. FIG. 3B is a schematic explanatory diagram (part 2) of the flow rate monitoring method according to the embodiment. FIG. 3C is a schematic explanatory diagram (part 3) of the flow monitoring method according to the embodiment. FIG. 4 is a block diagram of the control device. FIG. 5 is a flowchart illustrating a processing procedure of a series of substrate processing performed in the processing unit. FIG. 6A is an explanatory diagram (part 1) of a case where the control unit functions as a monitoring unit. FIG. 6B is an explanatory diagram (part 2) of a case where the control unit functions as a monitoring unit. FIG. 7A is an explanatory diagram (part 1) of a case where the control unit functions as an output time point changing unit. FIG. 7B is an explanatory diagram (part 2) of a case where the control unit functions as an output time point changing unit. FIG. 7C is an explanatory diagram (part 3) of a case where the control unit functions as an output point change unit. FIG. 7D is an explanatory diagram (part 4) of the case where the control unit functions as an output time point changing unit. FIG. 8A is a flowchart illustrating a processing procedure of a process performed when the control unit functions as a monitoring unit and an output time point changing unit. FIG. 8B is a flowchart illustrating a processing procedure of a monitoring determination process performed when the control unit functions as a monitoring unit. FIG. 8C is a flowchart illustrating a processing procedure of an output time change process executed when the control unit functions as the output time change unit. FIG. 9 is a block diagram of a control device according to the second embodiment. FIG. 10 is a diagram illustrating a configuration of a processing unit according to the second embodiment. FIG. 11 is an explanatory diagram of a case where the control unit according to the second embodiment functions as a monitoring unit. FIG. 12 is a diagram (part 1) illustrating a case where the control unit according to the second embodiment functions as an output time point changing unit. FIG. 13 is an explanatory diagram (part 2) of the case where the control unit according to the second embodiment functions as an output time point changing unit.

  Hereinafter, embodiments of a processing device, a processing method, and a storage medium disclosed in the present application will be described in detail with reference to the accompanying drawings. The present invention is not limited by the embodiments described below. In the following, description will be made by taking as an example a case where the object to be processed is a substrate and the processing apparatus is a substrate processing system.

  FIG. 1 is a diagram illustrating a schematic configuration of a substrate processing system according to the present embodiment. Hereinafter, in order to clarify the positional relationship, an X axis, a Y axis, and a Z axis that are orthogonal to each other are defined, and the positive direction of the Z axis is defined as a vertically upward direction.

  As shown in FIG. 1, the substrate processing system 1 includes a loading / unloading station 2 and a processing station 3. The loading / unloading station 2 and the processing station 3 are provided adjacent to each other.

  The loading / unloading station 2 includes a carrier mounting section 11 and a transport section 12. A plurality of substrates, in this embodiment, a plurality of carriers C that accommodates a semiconductor wafer (hereinafter, wafer W) in a horizontal state are mounted on the carrier mounting portion 11.

  The transport unit 12 is provided adjacent to the carrier mounting unit 11 and includes a substrate transport device 13 and a transfer unit 14 therein. The substrate transfer device 13 includes a wafer holding mechanism that holds the wafer W. Further, the substrate transfer device 13 is capable of moving in the horizontal and vertical directions and turning around the vertical axis, and transfers the wafer W between the carrier C and the transfer unit 14 using the wafer holding mechanism. Do.

  The processing station 3 is provided adjacent to the transport unit 12. The processing station 3 includes a transport unit 15 and a plurality of processing units 16. The plurality of processing units 16 are provided side by side on the transport unit 15.

  The transfer unit 15 includes a substrate transfer device 17 inside. The substrate transfer device 17 includes a wafer holding mechanism that holds the wafer W. Further, the substrate transfer device 17 is capable of moving in the horizontal and vertical directions and turning around the vertical axis, and transfers the wafer W between the transfer unit 14 and the processing unit 16 using the wafer holding mechanism. I do.

  The processing unit 16 performs a predetermined substrate processing on the wafer W transferred by the substrate transfer device 17.

  Further, the substrate processing system 1 includes a control device 4. The control device 4 is, for example, a computer, and includes a control unit 18 and a storage unit 19. The storage unit 19 stores programs for controlling various types of processing executed in the substrate processing system 1. The control unit 18 controls the operation of the substrate processing system 1 by reading and executing the program stored in the storage unit 19.

  The program may be recorded on a storage medium readable by a computer, and may be installed from the storage medium into the storage unit 19 of the control device 4. Examples of the storage medium that can be read by a computer include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnet optical disk (MO), and a memory card.

  In the substrate processing system 1 configured as described above, first, the substrate transfer device 13 of the loading / unloading station 2 takes out the wafer W from the carrier C placed on the carrier placing portion 11 and receives the taken out wafer W. Placed on the transfer unit 14. The wafer W placed on the delivery unit 14 is taken out of the delivery unit 14 by the substrate transfer device 17 of the processing station 3 and carried into the processing unit 16.

  The wafer W carried into the processing unit 16 is processed by the processing unit 16, then unloaded from the processing unit 16 by the substrate transfer device 17, and placed on the delivery unit 14. Then, the processed wafer W mounted on the transfer unit 14 is returned to the carrier C of the carrier mounting unit 11 by the substrate transfer device 13.

  Next, a schematic configuration of the processing unit 16 will be described with reference to FIG. FIG. 2 is a diagram illustrating a schematic configuration of the processing unit 16.

  As shown in FIG. 2, the processing unit 16 includes a chamber 20, a substrate holding mechanism 30, a processing fluid supply unit 40, and a collection cup 50.

  The chamber 20 houses the substrate holding mechanism 30, the processing fluid supply unit 40, and the collection cup 50. An FFU (Fan Filter Unit) 21 is provided on the ceiling of the chamber 20. The FFU 21 forms a down flow in the chamber 20.

  The substrate holding mechanism 30 includes a holding unit 31, a support unit 32, and a driving unit 33. The holding unit 31 holds the wafer W horizontally. The support portion 32 is a member extending in the vertical direction, and the base end portion is rotatably supported by the driving portion 33 and the support portion 31 is horizontally supported at the distal end portion. The driving part 33 rotates the support part 32 around a vertical axis. The substrate holding mechanism 30 rotates the support portion 32 supported by the support portion 32 by rotating the support portion 32 by using the driving portion 33, and thereby rotates the wafer W held by the support portion 31. .

  The processing fluid supply unit 40 supplies a processing fluid to the wafer W. The processing fluid supply unit 40 is connected to a processing fluid supply source 70.

  The collection cup 50 is disposed so as to surround the holding unit 31, and collects the processing liquid scattered from the wafer W by the rotation of the holding unit 31. A drain 51 is formed at the bottom of the recovery cup 50, and the processing liquid collected by the recovery cup 50 is discharged from the drain 51 to the outside of the processing unit 16. An exhaust port 52 for discharging gas supplied from the FFU 21 to the outside of the processing unit 16 is formed at the bottom of the collection cup 50.

  Next, an outline of a processing fluid flow monitoring method according to the present embodiment will be described with reference to FIGS. 3A to 3C. 3A to 3C are schematic explanatory diagrams (part 1) to (part 3) of a flow rate monitoring method according to the embodiment.

  In the following, a case where the processing fluid supplied by the processing fluid supply unit 40 is a liquid processing liquid will be described as a main example. Accordingly, the supply flow rate of the processing liquid by the processing fluid supply unit 40 is described as “discharge flow rate”.

  Further, in each of the drawings referred to hereinafter, a change in the discharge flow rate may be indicated by a waveform, but such a waveform is mainly represented by a trapezoidal wave. However, this is merely for convenience of description, and does not limitly show a change in the actual discharge flow rate.

  As shown in FIG. 3A, in the flow rate monitoring method according to the present embodiment, the discharge flow rate of the processing liquid is not limited to the time of stable supply (see a portion surrounded by a broken-line rectangle S), but may be a so-called rising or falling. It was also monitored during the transitional changes.

  Here, the rise or fall refers to a temporal change of the discharge flow rate when the discharge flow rate is changed from the first flow rate to the second flow rate. For example, “rise” (see a portion surrounded by a dashed rectangle R) is a temporal transition of the discharge flow rate when the discharge flow rate is changed from “0” to a predetermined “target flow rate”. The “target flow rate” corresponds to a preset “specific flow rate” required for processing the wafer W. “Falling” (see a portion surrounded by a broken-line rectangle F) is a temporal transition of the discharge flow rate when the discharge flow rate is changed from “target flow rate” to “0”.

  By monitoring such a rise or fall, it is possible to detect a difference (so-called variation) between the devices of the processing fluid supply unit 40 that appears at the time of the rise or fall and is caused by, for example, a device manufacturing error or aged deterioration. Then, based on the result, it is possible to determine whether or not there is an abnormality in the processing fluid supply unit 40, and to perform an output time change process for reducing a difference between devices of the processing fluid supply unit 40.

  The flow rate monitoring method according to the present embodiment will be described more specifically with reference to FIGS. 3B and 3C. In the following, the description will be given with an example mainly of monitoring “rise”.

  As shown in FIG. 3B, in the flow rate monitoring method according to the present embodiment, first, a target elapsed time and a target integrated amount corresponding to the target elapsed time are set in advance. The target elapsed time and the target integrated amount are reference values of the elapsed time and the integrated amount, respectively, from the start of the discharge of the processing liquid, and are used as indicators for determining the presence or absence of the above-described abnormality and detecting a difference between devices. Become.

  Specifically, the target integrated amount is set as follows, for example, based on the required amount of the processing liquid required from the start of the discharge of the processing liquid to the time when the processing liquid reaches the surface of the wafer W. As shown in FIG. 3C, the processing fluid supply unit 40 includes a nozzle 41, an arm 42 that horizontally supports the nozzle 41, and a swivel elevating mechanism 43 that swivels and elevates the arm 42.

  A supply pipe 44 penetrates through each of the nozzle 41, the arm 42, and the turning mechanism 43, and a processing liquid is supplied to the supply pipe 44 from a processing fluid supply source 70 via a valve 60. The valve 60 corresponds to an example of an opening / closing unit, and according to an “opening / closing operation signal” sent from the control unit 18, specifically, according to an “opening operation signal” and a “closing operation signal”, the processing liquid supplied to the nozzle 41. Open and close the flow path. The processing liquid supplied to the supply pipe 44 by opening the valve 60 sequentially passes through the inside of the swiveling / lowering mechanism 43, the arm 42 and the nozzle 41, and from the nozzle 41 to the holding part 31 a of the holding part 31. The liquid is discharged toward the horizontally held wafer W while being slightly separated from the upper surface.

  Then, the target integrated amount is set based on, for example, the volume of the supply pipe 44 described above. The distance d from the tip of the nozzle 41 to the surface of the wafer W and the diameter of the supply pipe 44 (thickness of the processing liquid to be discharged) may be added. Thereby, the required amount of the processing liquid required from the start of the discharge of the processing liquid to the time when the processing liquid reaches the surface of the wafer W can be derived.

  The discharge start point of the processing liquid here refers to, for example, a point in time when the control unit 18 outputs a discharge start signal which is a signal for instructing the start of the discharge of the processing liquid. On the other hand, the discharge end point indicates the point in time when the control unit 18 outputs a discharge end signal which is a signal for instructing the end of the processing liquid discharge. The ejection start signal corresponds to an example of an “opening operation signal”, and the ejection end signal corresponds to an example of a “closing operation signal”.

  Then, in the flow rate monitoring method according to the present embodiment, by monitoring the deviation amount of the actual elapsed time required by the actual nozzle 41 until reaching the preset target integrated amount, the deviation amount from the target elapsed time, The difference between the devices at the start-up is detected. Details of the monitoring of the shift amount will be described later with reference to FIG. 6A.

  The actual discharge flow rate of the nozzle 41 is measured by the measuring unit 80. The measurement unit 80 is, for example, a flow meter, and is provided, for example, between the processing fluid supply source 70 and the valve 60 as shown in FIG. 3C.

  Returning to the description of FIG. 3B. In the flow rate monitoring method according to the present embodiment, the instantaneous value of the discharge flow rate when a predetermined elapsed time shorter than the target elapsed time has elapsed from the start of the supply of the processing liquid is also monitored. The predetermined elapsed time shorter than the target elapsed time is, for example, an elapsed time slightly before the target elapsed time shown in FIG. 3B.

  In the flow rate monitoring method according to the present embodiment, by monitoring the instantaneous value of the discharge flow rate from the start of discharge of the processing liquid, the discharge flow rate normally rises toward the target flow rate during stable supply, in other words, It monitors whether the rise of the discharge flow rate is out of the allowable range. Details of the monitoring of the instantaneous value will be described later with reference to FIG. 6B.

  For convenience of the following description, FIG. 3B shows an example of a target elapsed time, a target integration amount, and the like. As shown in FIG. 3B, in the present embodiment, the target elapsed time is “1.5 seconds”, the target integrated amount is “25 ml”, the target flow rate is “1400 ml”, and the target discharge time is “10 seconds”. I do. The target discharge time is a time from the above-mentioned “discharge start” to “discharge end”. Note that each numerical value shown in FIG. 3B is merely an example, and does not limit the numerical value actually set.

  Next, the control device 4 will be described more specifically with reference to FIG. FIG. 4 is a block diagram of the control device 4. In FIG. 4, components necessary for describing the features of the present embodiment are represented by functional blocks, and descriptions of general components are omitted.

  In other words, each component illustrated in FIG. 4 is a functional concept and does not necessarily need to be physically configured as illustrated. For example, the specific form of distribution / integration of each functional block is not limited to the illustrated one, and all or a part of the functional blocks may be functionally or physically distributed in arbitrary units according to various loads and usage conditions. -It is possible to integrate and configure.

  Furthermore, all or any part of each processing function performed in each functional block of the control device 4 is realized by a processor such as a CPU (Central Processing Unit) and a program analyzed and executed by the processor. Alternatively, it can be realized as hardware by wired logic.

  First, as described above, the control device 4 includes the control unit 18 and the storage unit 19 (see FIG. 1). The control unit 18 is, for example, a CPU and functions as, for example, each of the functional blocks 18a to 18c illustrated in FIG. 4 by reading and executing a program (not illustrated) stored in the storage unit 19. Subsequently, each of the functional blocks 18a to 18c will be described.

  As shown in FIG. 4, for example, the control unit 18 includes a substrate processing execution unit 18a, a monitoring unit 18b, and an output time point changing unit 18c. The storage unit 19 stores recipe information 19a.

  When the control unit 18 functions as the substrate processing execution unit 18a, the control unit 18 controls the processing unit 16 according to the recipe information 19a stored in the storage unit 19 to supply a chemical solution to the wafer W. A series of substrate processes including a rinsing process for supplying a rinsing liquid and a drying process for drying the wafer W are executed.

  At this time, the control unit 18 performs an opening / closing operation signal for causing the valve 60 of the processing fluid supply unit 40 to perform an opening / closing operation in accordance with the recipe information 19a. A closing operation signal for causing the valve 60 to perform a closing operation is sent, and a predetermined processing liquid is discharged to the processing fluid supply unit 40 according to the content of the substrate processing. The discharge flow rate of the processing fluid supply unit 40 is measured by the measurement unit 80, and the measurement result is notified to the monitoring unit 18b each time.

  The recipe information 19a is information indicating the details of the substrate processing. Specifically, the content of each processing to be executed by the processing unit 16 during the substrate processing is information registered in advance in the processing sequence. Here, the content of each processing also includes the type of the processing liquid to be discharged to the processing fluid supply unit 40 according to the content of the substrate processing. In addition, the recipe information 19a also includes information regarding the output time of the open operation signal and the close operation signal to the valve 60. The control unit 18 outputs an opening operation signal and a closing operation signal at a time point set in advance by the recipe information 19a. Here, the preset time point refers to the output time point of the opening operation signal and the closing operation signal currently stored in the recipe information 19a. That is, when the output time of the open operation signal or the close operation signal is changed by the output time change processing described later, the output time of the open operation signal or the close operation signal after the change is considered for the wafer W to be processed thereafter. , A preset time.

  Here, with reference to FIG. 5, a processing procedure of a series of substrate processing that is controlled by the control unit 18 and executed in the processing unit 16 will be described. FIG. 5 is a flowchart showing a processing procedure of a series of substrate processing executed in the processing unit 16.

  As shown in FIG. 5, in the processing unit 16, a chemical solution process (step S101), a rinsing process (step S102), and a drying process (step S103) are executed in this order.

  In the chemical treatment, DHF (dilute hydrofluoric acid) is discharged from the nozzle 41 to the wafer W. In the rinsing process, DIW (pure water) is discharged from the nozzle 41 to the wafer W, and DHF on the wafer W is washed away. In the drying process, the DIW on the wafer W is removed and the wafer W is dried.

  Each of the processing liquids such as DHF and DIW is stored in an individual processing fluid supply source 70 and is discharged from the nozzle 41 by opening and closing an individual valve 60. Although not shown in FIG. 5, after the drying process is completed, a replacement process for replacing the wafer W in the chamber 20 is performed.

  Here, for example, if the time from when the DHF reaches the wafer W until it stops reaching the wafer W differs for each processing unit 16, a variation in the etching amount between the wafers W occurs. Therefore, the control device 4 performs an output time change process described later to equalize the time from when the DHF reaches the wafer W until it stops reaching, thereby suppressing the variation in the etching amount between the wafers W. .

  Returning to the description of FIG. 4, a case where the control unit 18 functions as the monitoring unit 18b will be described. When functioning as the monitoring unit 18b, the control unit 18 monitors at least the rising of the discharge flow rate based on the measurement result of the measurement unit 80. Specifically, after sending the opening / closing operation signal to the valve 60 of the processing fluid supply unit 40 according to the recipe information 19a, the control unit 18 starts integration of the supply flow rate based on the measurement result of the measurement unit 80, and calculates the flow rate. The rise of the supply flow rate is monitored by the integrated amount. Further, the control unit 18 monitors the supply flow rate based on the measured value of the measurement unit 80 at the time of supplying the specific flow rate. Further, the control unit 18 determines whether there is an abnormality in the processing fluid supply unit 40 based on the monitored result. Note that the control unit 18 performs the monitoring process and the determination process for all the processing units 16.

  A case where the control unit 18 functions as the monitoring unit 18b will be described more specifically with reference to FIGS. 6A and 6B. 6A and 6B are explanatory diagrams (part 1) and (part 2) when the control unit 18 functions as the monitoring unit 18b. Note that the “integrated value” in FIG. 6A corresponds to the integrated amount calculated by the control unit 18.

  As shown in FIG. 6A, when the control unit 18 functions as the monitoring unit 18b, for example, the control unit 18 calculates an integrated value of the processing liquid discharge flow rate at a predetermined cycle i1 from the start of discharge (step S1). . The period i1 is preferably, for example, about 10 ms to 100 ms.

  And the control part 18 measures the time until the integrated value of step S1 reaches the predetermined target integrated amount (step S2). Here, the time required to reach the target integrated amount is set as the actual elapsed time t1.

  Then, the control unit 18 monitors a deviation amount between the measured actual elapsed time t1 and the target elapsed time (step S3), and determines whether or not there is an abnormality in the processing fluid supply unit 40 based on the monitoring result.

  For example, if the deviation amount of the arrival time to the target integrated amount is within a predetermined range indicating an allowable range that can be adjusted by the output time point changing process described later, the control unit 18 performs a normal determination that there is no abnormality. Then, the detected shift amount in each processing fluid supply unit 40 of each processing unit 16 is notified to the output time point changing unit 18c.

  If the amount of deviation is not within the above-described predetermined range, an abnormality is determined to be abnormal, and a predetermined value is determined at the time of abnormality determination such as outputting a warning to an output device such as a display unit or stopping substrate processing. Execute the process.

  As another example of monitoring the shift amount, the control unit 18 calculates an integrated value of the discharge flow rate of the processing liquid over a predetermined target elapsed time, and calculates a shift amount between the integrated value and the predetermined target integrated amount. It may be monitored. Even in such a case, it is possible to determine whether or not there is an abnormality in the processing fluid supply unit 40 based on the degree of the shift amount.

  In addition, not only the deviation amount based on the integrated value of the discharge flow rate shown in FIG. 6A but also as shown in FIG. 6B, the control unit 18 has passed a predetermined elapsed time shorter than the target elapsed time from the start of the supply of the processing liquid. The instantaneous value of the discharge flow rate in the case is also monitored (step S4). Here, the predetermined elapsed time is time t2.

  Specifically, as shown in FIG. 6B, the control unit 18 samples the instantaneous value of the discharge flow rate a plurality of times at a predetermined cycle i2 from time t2 (step S41). The period i2 is preferably, for example, about 10 ms to 50 ms.

  Then, the control unit 18 calculates an average value of the sampled instantaneous values (step S42), and determines whether or not the calculated average value is, for example, in a predetermined range based on the target flow rate (step S43). By taking the average value of the instantaneous values, a steep change in the discharge flow rate can be smoothed, and a gradual abnormality determination that does not react sensitively can be performed.

  For example, it is assumed that the predetermined elapsed time is 1 second and the predetermined range based on the target flow rate (1400 ml) is ± 1% of the target flow rate. In such a case, if the average value of the instantaneous values sampled one second after the start of the discharge is in the range of 1386 ml to 1414 ml, the control unit 18 makes a normal determination that there is no abnormality in the processing fluid supply unit 40, and Continue execution of the process.

  If the average value of the sampled instantaneous values is not within the above range, the control unit 18 executes the predetermined processing at the time of the abnormality determination as described above.

  Returning to the description of FIG. 4, a case where the control unit 18 functions as the output time point changing unit 18c will be described. When functioning as the output time changing unit 18c, the control unit 18 performs an output time changing process of changing the time at which the discharge start signal is output to the valve 60, based on the integrated amount calculated based on the measurement result of the measuring unit 80.

  More specifically, when functioning as the output time changing unit 18c, the control unit 18 determines when the predetermined processing liquid in the predetermined substrate processing reaches the surface of the wafer W (hereinafter, referred to as “reaching time”). The time at which the discharge start signal is output to the valve 60 is changed based on the shift amount of each processing fluid supply unit 40 notified from the monitoring unit 18b so that the nozzles 41 are aligned. Thus, the time from when the processing liquid reaches the wafer W to when it does not reach the processing liquid becomes uniform between the nozzles 41. Therefore, for example, by applying the output time change processing to the step of supplying DHF as the processing liquid, it is possible to suppress the variation in the etching amount between the wafers W. In this embodiment, the time point T4 at which the ejection end signal is output is not changed. The output time change processing is performed, for example, when adjusting the variation between the processing units 16 at the time of initial setting of the substrate processing system 1. The output time changing process is also performed after the initial setting, during the execution of a series of substrate processes for the wafer W as a product substrate. The output time changing process in this case is performed at predetermined intervals set in advance, and the interval may be set based on, for example, a lot which is a unit of transport of the wafer W, or may be set based on the number of processed wafers W. It may be set based on this.

  Further, the output time changing unit 18c changes the recipe information 19a based on the changed output time of each ejection start signal, and supplies each processing fluid to the substrate processing execution unit 18a at the time of outputting each changed ejection start signal. The unit 40 is controlled.

  A case where the control unit 18 functions as the output time point changing unit 18c will be described more specifically with reference to FIGS. 7A to 7D. 7A to 7D are explanatory diagrams (part 1) to (part 4) when the control unit 18 functions as the output time point changing unit 18c.

  7A to 7D, two processing units 16 of “first processing unit 16_1” and “second processing unit 16_2” are taken as an example, and the description will be made while comparing these.

  Also, the respective components (for example, the nozzle 41 and the like) of the “first processing unit 16_1” and the “second processing unit 16_2” are also numbered “_1” and “_2” to distinguish them from each other. It shall be. 7A to 7D are the waveforms of the ejection signals.

  First, it is assumed that the control unit 18 functions as the monitoring unit 18b and the monitoring result illustrated in FIG. 7A is obtained. As shown in FIG. 7A, in the first processing unit 16_1, the discharge start of the processing liquid is the time T1 at which the discharge start signal is output, and in response to this, the discharge flow rate of the processing liquid starts rising to 0 or more from the time T2, Then, it is assumed that the time T3 is the arrival time at which the processing liquid reaches the surface of the wafer W.

  In the second processing unit 16_2, similarly to the first processing unit 16_1, the discharge start of the processing liquid is the time point T1 at which the discharge start signal is output, and accordingly, the discharge flow rate becomes 0 from the time point T2 ′ later than the time point T2. It is assumed that the rising starts as described above, and the time point T3 'later than the time point T3 is the arrival time point.

  That is, between the first processing unit 16_1 and the second processing unit 16_2, a relative shift amount d1 occurs at the start of rising, and a relative shift amount d2 occurs at the arrival time. Here, for convenience of explanation, it is assumed that d1 = d2.

  When the control unit 18 functions as the output time change unit 18c, based on such a monitoring result, for example, the nozzle 41 whose arrival time is the latest is set as a reference (corresponding to an example of a “reference nozzle”), The timing at which the ejection start signal is output to each of the other nozzles 41 is delayed based on the above-described shift amount so that the arrival times of the other nozzles 41 are aligned.

  Specifically, when the monitoring result illustrated in FIG. 7A is obtained, the control unit 18 determines the nozzle 41_2 of the second processing unit 16_2 whose arrival time is the latest as a reference nozzle as illustrated in FIG. 7B, for example. I do.

  Then, the output time point of the ejection start signal of the first processing unit 16_1 at the time point T1 is set so that the arrival time point T3 ′ of the nozzle 41_1 of the first processing unit 16_1 is aligned with the arrival time point T3 ′ of the reference nozzle. Is delayed to the time point T2 ′ based on the relative shift amount d1 of.

  Thereby, the arrival time of the processing liquid can be made uniform between the first processing unit 16_1 and the second processing unit 16_2, so that the variation in the processing result due to the variation in the arrival time between the wafers W, for example, the etching amount of the wafer W Variation can be prevented. Further, it is possible to prevent a decrease in yield due to a variation in processing results.

  If the number of the processing units 16 is three or more, the ejection start signals for all the other nozzles 41 are set so that the arrival time is aligned with the reference, based on the nozzle 41 whose arrival time is the latest. What is necessary is just to delay each output time according to each shift amount of all the other nozzles 41.

  Although FIG. 7B shows an example in which the output time point of the ejection start signal is delayed, the output time point may be set earlier. That is, the nozzle 41 having the earliest arrival time is the above-described reference nozzle, and the output time of the ejection start signal to each of the other nozzles 41 is set so that the arrival time of each of the other nozzles 41 coincides with the arrival time of the reference nozzle. It may be made to precede based on the deviation amount of. Such an example is shown in FIG. 7C.

  Specifically, when the monitoring result shown in FIG. 7A is obtained, the control unit 18 determines the nozzle 41_1 of the first processing unit 16_1 whose arrival time is the earliest as the reference nozzle as shown in FIG. 7C, for example. I do.

  The output time point of the ejection start signal on the second processing unit 16_2 side, which is the time point T1, is described above so that the arrival time point T3 ′ of the nozzle 41_2 of the second processing unit 16_2 is aligned with the arrival time point T3 of the reference nozzle. Is advanced to the time point T0 based on the relative shift amount d1 of.

  Even in such a case, the arrival times of the processing liquid can be made uniform between the first processing unit 16_1 and the second processing unit 16_2, so that the arrival time varies between the wafers W, so that the processing results vary, for example, the etching of the wafer W Variation in the amount can be prevented. Further, it is possible to prevent a decrease in yield due to a variation in processing results.

  When the number of the processing units 16 is three or more, the ejection start signals for all the other nozzles 41 are set so that the arrival time is aligned with the reference, based on the nozzle 41 having the earliest arrival time. What is necessary is just to advance each output time point according to each shift amount of all the other nozzles 41.

  7B and FIG. 7C, the case where the nozzle 41 whose arrival time is the latest or the earliest in the monitoring results is set as a reference and the reference is set to such a reference is taken as an example. Timing control may be performed so as to match. Such an example is shown in FIG. 7D. For convenience, in FIG. 7D, a preset reference value is represented by a dashed line waveform. In the reference value, the arrival time point is assumed to be time point T3 ''.

  Specifically, when the monitoring result illustrated in FIG. 7A is obtained, the control unit 18 determines that the arrival times of all the nozzles 41 reach the arrival time T3 ″ of the preset reference value, for example, as illustrated in FIG. 7D. Timing control is performed so that they are aligned.

  For example, as shown in FIG. 7D, it is assumed that a relative displacement d3 preceding the reference value has occurred in the first processing unit 16_1. In such a case, the control unit 18 controls the ejection start signal of the first processing unit 16_1 at the time T1 so that the arrival time T3 of the nozzle 41_1 of the first processing unit 16_1 is aligned with the arrival time T3 ″ of the reference value. The output time is delayed to time T1 'based on the deviation d3 from the reference value.

  Also, for example, in the second processing unit 16_2, it is assumed that a relative shift amount d4 delayed from the reference value has occurred. In this case, the control unit 18 controls the ejection start signal of the second processing unit 16_2 at the time T1 so that the arrival time T3 ′ of the nozzle 41_2 of the second processing unit 16_2 is aligned with the arrival time T3 ″ of the reference value. The output time point is advanced to the time point T0 ′ based on the deviation d4 from the reference value.

  Even in such a case, the arrival times of the processing liquid can be made uniform between the first processing unit 16_1 and the second processing unit 16_2, so that the arrival time varies between the wafers W, so that the processing results vary, for example, the etching of the wafer W Variation in the amount can be prevented. Further, it is possible to prevent a decrease in yield due to a variation in processing results.

  When the number of the processing units 16 is three or more, the output time of the ejection start signal for each nozzle 41 is set to the reference time of each nozzle 41 so that the arrival time at each nozzle 41 is aligned with the arrival time of the reference value. What is necessary is just to delay or advance according to each shift amount with respect to a value.

  Next, a processing procedure of a process executed when the control unit 18 functions as the monitoring unit 18b and the output time point changing unit 18c will be described with reference to FIGS. 8A to 8C.

  FIG. 8A is a flowchart illustrating a processing procedure of a process executed when the control unit 18 functions as the monitoring unit 18b and the output time point changing unit 18c. FIG. 8B is a flowchart illustrating a processing procedure of a monitoring determination process performed when the control unit 18 functions as the monitoring unit 18b. FIG. 8C is a flowchart illustrating a processing procedure of an output time change process executed when the control unit 18 functions as the output time change unit 18c.

  As illustrated in FIG. 8A, the control unit 18 functions as a monitoring unit 18b and performs a monitoring determination process (Step S201). If there is no abnormality determination in the monitoring determination process (No at Step S202), the control unit 18 functions as the output time change unit 18c and performs the output time change process (Step S203).

  If there is an abnormality determination in the monitoring determination process (step S202, Yes), the control unit 18 ends the process without performing the output time change process.

  Here, the processing procedure illustrated in FIG. 8A may be repeatedly executed each time the processing liquid is discharged from the nozzle 41 during a series of substrate processing of the substrate processing system 1 during the actual operation. That is, the output time changing process may be repeatedly performed based on the monitoring result each time the processing liquid is discharged from the nozzle 41, and the control result may be dynamically changed sequentially. For example, the result of performing the output time changing process based on the monitoring result of the wafer W supplied and processed this time can be applied to the case where the DHF is supplied to the next wafer W.

  Thereby, for example, it is possible to perform the monitoring determination and the timing control corresponding to the dynamic change of the deviation amount during the actual operation.

  Next, a processing procedure of the monitoring determination processing will be described. As illustrated in FIG. 8B, in the monitoring determination process, the control unit 18 monitors the amount of deviation at the time of rising of the discharge flow rate (Step S301). The shift amount is a shift amount based on the integrated value of the discharge flow rate described above.

  Then, the control unit 18 determines whether or not the deviation is within a predetermined range indicating an allowable range (Step S302). Here, when the deviation amount is within the predetermined range (Step S302, Yes), the control unit 18 monitors the average value of the instantaneous values at the time of the rise of the discharge flow rate (Step S303).

  Then, the control unit 18 determines whether or not the average value is within a predetermined range based on the target flow rate (Step S304).

  Here, when the average value is within the predetermined range (Step S304, Yes), the control unit 18 makes a normal determination that there is no abnormality in the processing fluid supply unit 40 (Step S305), and ends the processing.

  On the other hand, when the deviation amount or the average value is not within the predetermined range (Step S302, No / Step S304, No), the control unit 18 determines that the processing fluid supply unit 40 has an abnormality (Step S306). The process ends.

  Next, the processing procedure of the output time change processing will be described. As shown in FIG. 8C, in the output time change processing, the control unit 18 compares the deviation amounts in the respective processing units 16 based on the monitoring result in the monitoring determination processing (step S401).

  Then, the control unit 18 determines (the nozzle 41 of) the processing unit 16 that is used as a reference in the output time change processing (step S402).

  Then, the control unit 18 changes the discharge start time of each processing unit 16 according to the determined reference processing unit 16 (step S403). The ejection start time corresponds to the output time of the above-described ejection start signal.

  Then, the control unit 18 changes the recipe information 19a based on the changed discharge start time, controls the processing fluid supply unit 40 of each processing unit 16 according to the changed recipe information 19a (step S404), and ends the processing. I do. The changed recipe information 19a is applied when the processing liquid is supplied to the next wafer W.

  As described above, the substrate processing system 1 (corresponding to an example of the “processing apparatus”) according to the present embodiment includes the chamber 20, the nozzle 41, the measuring unit 80, the valve 60, and the (an example of the “opening / closing unit”). ), And a control unit 18.

  The chamber 20 accommodates a wafer W (corresponding to an example of “object to be processed”). At least one nozzle 41 is provided in the chamber 20 and supplies a processing liquid (corresponding to an example of “processing fluid”) toward the wafer W. The measurement unit 80 measures the discharge flow rate of the processing liquid supplied to the nozzle 41 (corresponding to an example of “supply flow rate”). The valve 60 opens and closes a flow path of the processing liquid supplied to the nozzle 41. The control unit 18 outputs a discharge start signal (corresponding to an example of an “opening signal”) for causing the valve 60 to perform an opening operation and a discharge end signal (corresponding to an example of a “closing signal”) for performing the closing operation. Output at a preset time.

  Further, after outputting the discharge start signal, the control unit 18 calculates the integrated amount of the processing liquid based on the measurement result of the measuring unit 80 when the supply flow rate changes to a preset flow rate, and calculates the calculated integrated amount. Output time change processing for changing the time at which the ejection start signal is output from a preset time based on the amount is performed.

  Therefore, according to the substrate processing system 1 according to the present embodiment, variations in processing results due to variations in the time from when the processing fluid reaches the processing target to when the processing fluid no longer reaches the processing target, for example, DHF. This can prevent the variation in the etching amount due to the above.

(Second embodiment)
Next, a substrate processing system according to a second embodiment will be described. FIG. 9 is a block diagram of a control device according to the second embodiment. FIG. 10 is a diagram illustrating a configuration of a processing unit according to the second embodiment.

  As shown in FIG. 9, the control device 4A according to the second embodiment includes a control unit 18A and a storage unit 19A. The control unit 18A includes a substrate processing execution unit 18a, a monitoring unit 18b, an output time change unit 18c, a data collection unit 18d, and an initial opening change unit 18e. The storage unit 19A stores recipe information 19a and accumulated data 19b.

  Further, as shown in FIG. 9, the processing unit 16A according to the second embodiment includes a processing fluid supply unit 40, a measurement unit 80, and a flow rate adjustment unit 90. More specifically, as shown in FIG. 10, the processing unit 16A includes, as the processing fluid supply source 70, a DHF supply source 71 that is a DHF supply source, and a DIW supply source 72 that is a DIW supply source. The valve 60 is provided downstream of the DHF supply source 71 and opens and closes a DHF flow path, and the second valve 60 is installed downstream of the DIW supply source 72 and opens and closes a DIW flow path. And a valve 62. The measurement unit 80 is provided in a flow path between the DHF supply source 71 and the first valve 61, and is provided between the first measurement unit 81 that measures the flow rate of DHF and the DIW supply source 72 and the second valve 62. , And a second measuring unit 82 for measuring the flow rate of DIW.

  The flow rate adjusting section 90 includes a first flow rate adjusting section 91 and a second flow rate adjusting section 92. The first flow rate adjustment unit 91 is arranged on the upstream side of the first valve 61 and on the downstream side of the first measurement unit 81, and adjusts the opening degree of the DHF flow path according to the control of the control unit 18A of the control device 4A. , DHF flow rate. The second flow rate adjusting section 92 is arranged on the upstream side of the second valve 62 and on the downstream side of the second measuring section 82, and adjusts the opening degree of the DIW flow path according to the control of the control section 18A to thereby control the DIW flow rate. To adjust.

  Here, an initial opening is set in the first flow rate adjusting section 91 and the second flow rate adjusting section 92. The initial opening is an opening before the start of a series of substrate processing. In this manner, by opening the flow paths of DHF and DIW before the start of the series of substrate processing, the discharge flow rate can be reduced as compared with the case where the flow paths of the DHF and DIW are opened after the start of the series of substrate processing. Can be accelerated.

  Returning to FIG. 9, the control unit 18A will be described. When functioning as the data collection unit 18d, the control unit 18A performs a process of storing information based on the measurement result of the measurement unit 80 in the storage unit 19A. Specifically, the control unit 18A collects the monitoring result by the monitoring unit 18b and stores it in the storage unit 19A as accumulated data 19b.

  The monitoring results by the monitoring unit 18b include, for example, the time from when the first valve 61 is opened to when the target integrated amount is reached (hereinafter, referred to as “first actual elapsed time”), and when the second valve 62 is opened and the target The time from when the DHF reaches the target integration amount until the DIW reaches the target integration amount (hereinafter, the “actual supply time”) And so on). The control unit 18A stores these data in the storage unit 19A as accumulated data 19b for each processing unit 16A. Note that the control unit 18A can perform this processing, for example, every time a series of substrate processing ends.

  The control unit 18A also performs a process of generating various statistical values from the monitoring results accumulated in the storage unit 19A and storing the statistics as accumulated data 19b. The statistical value includes, for example, the maximum value, the minimum value, the difference between the maximum value and the minimum value, the average value, the standard deviation, and the like of the first actual elapsed time, the second actual elapsed time, and the actual supply time described above. . The control unit 18A stores these data in the storage unit 19A as accumulated data 19b for each processing unit 16A. The control unit 18A may perform this process each time a series of substrate processes is completed, or may execute the process each time a predetermined number of days elapse or each time the number of processed wafers W reaches the predetermined number. .

  Further, the control unit 18A may perform a process of displaying the accumulated data 19b stored in the storage unit 19A on a display unit (not shown). The display unit may be provided in the substrate processing system 1 or may be provided in a terminal connected to the substrate processing system 1 via a network or the like. For example, based on the accumulated data 19b, the control unit 18A can generate, for each processing unit 16A, a graph representing a temporal change such as the first actual elapsed time or the actual supply time, and display the graph on the display unit.

  Subsequently, a case where the control unit 18A functions as the monitoring unit 18b will be described with reference to FIG. FIG. 11 is an explanatory diagram when the control unit 18A according to the second embodiment functions as the monitoring unit 18b.

  As shown in FIG. 11, the control unit 18A monitors the amount of deviation between the first actual elapsed time and the first monitoring reference value, and determines whether there is an abnormality in the processing fluid supply unit 40 based on the monitoring result.

  Specifically, the control unit 18A determines whether the measured first actual elapsed time is within the normal range TH based on the first monitoring reference value. The normal range TH is, for example, a range of ± 130 ms around the first monitoring reference value. That is, the control unit 18A determines whether or not the difference between the measured first actual elapsed time and the first monitoring reference value is within 130 ms.

  For example, when the first actual elapsed time is within the normal range TH, the control unit 18A makes a normal determination that there is no abnormality. On the other hand, when the first actual elapsed time exceeds the normal range TH, the control unit 18A performs an abnormality determination that there is an abnormality. In this case, the control unit 18A executes a predetermined process at the time of abnormality determination such as outputting a warning to an output device such as a display unit or stopping the substrate processing.

  As described above, the control unit 18A according to the second embodiment performs a process of updating the first monitoring reference value based on the accumulated data 19b. Therefore, it is possible to suppress a decrease in the accuracy of the abnormality determination due to aging of the processing unit 16A.

  Here, the first actual elapsed time and the first monitoring reference value have been described as examples, but the control unit 18A performs similar processing using the second actual elapsed time and the second monitoring reference value. Is possible.

  Subsequently, a case where the control unit 18A functions as the initial opening change unit 18e will be described. When functioning as the initial opening change unit 18e, the control unit 18A performs a process of changing the initial opening of the flow rate adjustment unit 90 based on the accumulated data 19b stored in the storage unit 19A.

  For example, as described above, the storage unit 19A stores the average value of the first actual elapsed time as the accumulated data 19b. The control unit 18A determines, for example, whether or not the average value of the first actual elapsed time has exceeded a predetermined threshold value. If the average value has exceeded the predetermined threshold value, the control unit 18A increases the initial opening of the first flow rate adjustment unit 91.

  The prolongation of the first actual elapsed time occurs due to, for example, aging of the first valve 61 or the like. When the average value of the first actual elapsed time exceeds a predetermined threshold, that is, when the first elapsed time is prolonged, the control unit 18A performs a process of increasing the initial opening of the first flow rate adjusting unit 91. Do.

  By increasing the initial opening degree of the first flow rate adjusting unit 91, the flow rate of DHF immediately after the opening of the first valve 61 can be increased, so that the rise of DHF is required as compared with the case where the initial opening degree is not changed. The time, that is, the first actual elapsed time can be reduced.

  Therefore, even when the first actual elapsed time is prolonged due to, for example, aging of the first valve 61, the first actual elapsed time can be reduced without replacing the first valve 61 or the like. .

  The control unit 18A performs a process of determining whether or not the average value of the first actual elapsed time has exceeded a predetermined threshold, for example, each time a series of substrate processing is completed, or each time the number of processed wafers W reaches the predetermined number. Can be performed every predetermined number of days.

  Here, it is determined whether or not the average value of the first actual elapsed time has exceeded a predetermined threshold. However, the control unit 18A performs the above-described determination processing based on other information stored as the accumulated data 19b. May go. The information on the initial opening may be stored in the storage unit 19A.

  Further, here, the process of adjusting the initial opening of the first flow rate adjusting unit 91 has been described, but the same applies to the process of adjusting the initial opening of the second flow rate adjusting unit 92.

  Next, a case where the control unit 18A functions as the output time point changing unit 18c will be described. FIG. 12 is a diagram (part 1) illustrating a case where the control unit 18A according to the second embodiment functions as the output time point changing unit 18c.

  Here, the upper part of FIG. 12 shows the open / closed state of the first valve 61 and the second valve 62 when the output time point changing unit 18c does not perform the output time point changing process on the first valve 61. 12 shows the integrated flow rates of DHF and DIW, and the lower part of FIG. 12 shows the first valve 61 and the second valve 62 when the output time change processing is performed by the output time change unit 18c. At the time of opening and closing.

  As shown in FIG. 12, the recipe information 19a includes a time point t11 at which an open operation signal for opening the first valve 61 is output, a time point t12 at which a close operation signal for closing the first valve 61 is output, and an open / close state for opening the second valve 62. A time point t13 for outputting the operation signal and a time point t14 for outputting the closing operation signal for closing the second valve 62 are included.

  Hereinafter, the time from time t11 to time t12 is referred to as DHF discharge set time T11, and the time from time t13 to time t14 is referred to as DIW discharge set time T12. The DHF discharge setting time T11 is, for example, DHF discharge when it is assumed that DHF is discharged from the nozzle 41 at the same time as the first valve 61 is opened and DHF discharge from the nozzle 41 is stopped at the same time as the first valve 61 is closed. Time.

  Here, when the supply of DHF is stopped and the supply of DIW is started at the same time, that is, when the closing operation signal for the first valve 61 is output and when the opening operation signal for the second valve 62 is output, Are described at the same time, but these need not always be at the same time. For example, an opening operation signal for the second valve 62 may be output after a predetermined time has elapsed since the closing operation signal for the first valve 61 is output. In order to suppress the variation in the etching amount due to DHF, it is not essential to stop the supply of DHF and start the supply of DIW at the same time.

  As described above, a predetermined time is required from the time t11 until the DHF starts to be discharged from the nozzle 41 (until the DHF reaches the wafer W) (first actual elapsed time T13), and the DHF starts from the time t12. A predetermined time is required until the nozzle 41 stops discharging (until the DHF does not reach the wafer W) (second actual elapsed time T14). The first actual elapsed time T13 and the second actual elapsed time T14 are not necessarily constant, but change due to aging or the like. Therefore, the actual discharge time of DHF may be shorter or longer than the DHF discharge set time T11 due to the fluctuation of the first actual elapsed time T13 and the second actual elapsed time T14. Since the DHF discharge time affects the degree of processing of the wafer W, it is desirable to minimize fluctuations in the DHF discharge time.

  Therefore, in the second embodiment, the opening operation signal and the closing operation signal of the valve 60 are output so that the actual discharge time of DHF is constant regardless of the first actual elapsed time T13 and the second actual elapsed time T14. We decided to change the point of time. Specifically, the control unit 18A changes the time point t12 among the time points t11, t12, and t13 defined by the recipe information 19a using the first actual elapsed time T13 and the second actual elapsed time T14.

  First, the control unit 18A calculates the difference between the first actual elapsed time T13 and the second actual elapsed time T14 as the adjustment time T15. Then, the control unit 18A shifts the time point t12 by the adjustment time T15.

  For example, when the first actual elapsed time T13 is longer than the second actual elapsed time T14, the actual DHF discharge time is shorter than the DHF discharge set time T11. In this case, the control unit 18A outputs a closing operation signal to the first valve 61 with a delay of the adjustment time T15, which is the difference between the first actual elapsed time T13 and the second actual elapsed time T14 (time t14). This makes it possible to match the actual DHF discharge time with the DHF discharge set time T11.

  Further, in the second embodiment, only the time point t12 is changed without changing the time points t11 and t13, so that it is possible to prevent a decrease in throughput as compared with a case where the processing time is simply lengthened.

  If the time t12 is delayed by the adjustment time T15, the DIW discharge time is shortened by the adjustment time T15. However, since the adjustment time T15 is about 100 to 200 ms, the DHF on the wafer W is not sufficiently washed out. It is unlikely that such a problem will occur.

  As the first actual elapsed time T13 used for calculating the adjustment time T15, for example, the first actual elapsed time T13 measured in the current substrate processing can be used. As the second actual elapsed time T14 used for calculating the adjustment time T15, for example, the second actual elapsed time T14 measured in the previous substrate processing can be used. The second actual elapsed time T14 measured in the previous substrate processing is stored in the storage unit 19A as accumulated data 19b. In addition, the control unit 18A calculates the adjustment time T15 using the average value of the first actual elapsed time and the average value of the second actual elapsed time stored as the accumulated data 19b in the storage unit 19A. Is also good.

  FIG. 13 is an explanatory diagram (part 2) of the case where the control unit 18A according to the second embodiment functions as the output time point changing unit 18c.

  As shown in FIG. 13, the control unit 18A performs an output time change process, that is, a process of changing the time t12 described above for each processing unit 16A.

  For example, in FIG. 13, the third processing unit 16A_3 in which the first actual elapsed time T13 and the second actual elapsed time T14 are the same, that is, the adjustment time T15 is 0, and the first actual elapsed time T13 is equal to the second actual elapsed time T14. The DHF of the fourth processing unit 16A_4, which is longer than that, that is, the adjustment time T15 is plus, the fifth processing unit 16A_5 whose first actual elapsed time T13 is shorter than that of the second actual elapsed time T14, that is, the adjustment time T15 is minus, An example of DIW ejection timing is shown.

  As described above, the first actual elapsed time T13 and the second actual elapsed time T14 vary depending on the processing unit 16A. However, according to the control unit 18A according to the second embodiment, such variations occurred. In this case, the discharge time of DHF, that is, the time from when DHF reaches the wafer W until it stops reaching, can be made uniform. For this reason, it is possible to suppress variations in the etching process between the processing units 16A. In other words, the uniformity of the etching process between the wafers W can be improved. The result of the output time change processing is applied to the processing for the next wafer W.

  As described above, the control unit 18A according to the second embodiment measures the actual elapsed time from when the opening operation signal is output to when the integrated amount reaches the preset target integrated amount, and Output time change processing for monitoring a deviation amount between a preset target elapsed time corresponding to the elapsed time and the target integration amount, and changing a time point at which the closing operation signal is output based on the deviation amount from a preset time point. Do.

  Further, in the substrate processing system 1 according to the second embodiment, a plurality of chambers 20 (in other words, processing units 16A) are provided, and the control unit 18A operates after the wafer 18 reaches the wafer W and outputs a closing operation signal. The time at which the closing operation signal is output is changed in the plurality of chambers 20 so that the time is the same between the nozzles 41 of the plurality of chambers 20.

  In the substrate processing system 1 according to the second embodiment, the processing fluid includes DHF (corresponding to an example of a chemical solution) and DIW (corresponding to an example of a rinsing liquid), and the valve 60 opens and closes the flow path of the DHF. And a second valve 62 for opening and closing the DIW liquid flow path. The control unit 18A supplies the wafer W in the order of DHF and DIW by outputting an open operation signal and a close operation signal to the first valve 61 and the second valve 62 at a preset time. . Then, the control unit 18A outputs the closing operation signal to the first valve 61 so that the time from when the DHF reaches the wafer W to when the closing operation signal is output is uniform between the nozzles 41 of the plurality of chambers 20. The time of the change is changed in the plurality of chambers 20.

  Further, DHF and DIW are continuously supplied from the nozzle 41, and the control unit 18A outputs the opening operation signal to the second valve 62 until the integrated amount reaches the preset target flow value. The actual elapsed time of the second valve 62 is measured, and the difference between the measured actual elapsed time of the second valve 62 and the target elapsed time of the second valve 62 corresponding to the target integrated amount is monitored. Change the time at which the operation signal is output.

  Therefore, according to the substrate processing system 1 according to the second embodiment, the time from when the processing liquid reaches the wafer W until it stops reaching can be made uniform between the nozzles 41 while preventing a decrease in throughput. . Thus, for example, when DHF is supplied as a processing liquid, variation in the etching amount between wafers W can be suppressed.

  Further, the substrate processing system 1 according to the second embodiment includes a storage unit 19A, and the control unit 18A stores information based on the measurement result of the measurement unit 80 in the storage unit 19A. Thereby, for example, information stored in the storage unit 19A can be provided as log information. In addition, by displaying the stored information on the display unit, the stored information can be used for flow rate monitoring and the like.

  The control unit 18A stores the actual elapsed time until the integrated amount of the rise of the supply flow rate reaches the preset target integrated amount in the storage unit 19A, and the actual elapsed time stored in the storage unit 19A. A process of determining a monitoring reference value based on time and a process of monitoring a deviation amount between the actual elapsed time and the monitoring reference value are performed. This makes it possible to monitor whether or not the rising of the processing fluid such as DHF and DIW is normal.

  Further, the control unit 18A performs a process of updating the monitoring reference value when a predetermined update condition is satisfied. Accordingly, it is possible to suppress the accuracy of the abnormality determination of the rising of the processing fluid such as DHF and DIW from being lowered due to the secular change of the processing unit 16A.

  Further, the substrate processing system 1 according to the second embodiment includes a storage unit 19A, a flow rate adjustment unit 90, and a control unit 18A. The storage unit 19A stores the integrated amount. The flow rate adjusting unit 90 is arranged on the upstream side of the valve 60 and adjusts the flow rate of the processing fluid flowing through the flow path. The control unit 18A controls the flow rate adjustment unit 90 to open the flow path at an initial opening before supplying the processing fluid to the nozzle 41, and to set a predetermined flow rate when supplying the processing fluid to the nozzle 41. And adjusting the opening degree of the flow path so that The control unit 18A stores the actual elapsed time from when the opening operation signal is output to when the integrated amount reaches the preset target integrated amount in the storage unit 19A, and stores the actual elapsed time in the storage unit 19A. A process of changing the initial opening degree of the flow rate adjusting unit after supplying the processing fluid to the nozzle 41 based on the actual elapsed time is performed.

  Thus, even if the actual elapsed time is prolonged due to, for example, aging of the valve 60, the actual elapsed time can be reduced without replacing the valve 60 or the like.

  In each of the above-described embodiments, the case where the output time change processing is performed between the nozzles 41 between the processing units 16 (in other words, between the processing chambers 20) has been described as an example. This embodiment may be applied between a plurality of nozzles 41.

  That is, when at least two nozzles 41 are provided in any one of the chambers 20, the above-described output time change processing can be performed between the plurality of nozzles 41 in the chamber 20.

  Further, in each of the embodiments described above, DHF is exemplified as the chemical solution, but other examples of the chemical solution include SC1, SC2, SPM, resist, developer, silylating agent, ozone water, and the like.

  Further, the rinsing liquid is not limited to DIW described above. For example, if the contents of the rinsing process include a process of supplying DIW to wafer W and a process of replacing DIW on wafer W with IPA, IPA is also included in the rinsing liquid.

  Further, in each of the above-described embodiments, the description has been mainly given of the rise of the discharge flow rate as an example. However, the fall may be monitored in the same manner. In the case of monitoring such a fall, for example, by detecting a deviation amount from the above-described target integrated amount, the processing liquid is constantly discharged to the wafer W for a predetermined amount and for a predetermined time. Opening and closing can be controlled.

  Further, in each of the above-described embodiments, the description has been given mainly of the liquid processing liquid as an example. However, for example, N2 gas or the like, which is a kind of inert gas, is used in a drying process or the like. In the case where is supplied from the nozzle 41, the above-described embodiment may be applied to the rise or fall of the supply flow rate of the gas.

  Further, in each of the above-described embodiments, the example in which the object to be processed is the wafer W has been described. However, the processing apparatus described above is generally applied to a processing apparatus that processes the object by supplying a processing fluid to the object. A form may be applied.

  Further effects and modifications can be easily derived by those skilled in the art. Thus, the broader aspects of the present invention are not limited to the specific details and representative embodiments shown and described above. Accordingly, various modifications may be made without departing from the spirit or scope of the general inventive concept as defined by the appended claims and equivalents thereof.

W wafer 1 substrate processing system 4 controller 16 processing unit 18 control unit 19 storage unit 19a recipe information 20 chamber 30 substrate holding mechanism 40 processing fluid supply unit 80 measuring unit

Claims (15)

A plurality of chambers accommodating the object to be processed,
A nozzle provided at least one in the chamber, for supplying a processing fluid toward the object to be processed;
A measuring unit for measuring a supply flow rate of the processing fluid supplied to the nozzle,
An opening and closing unit for opening and closing the flow path of the processing fluid supplied to the nozzle,
A control unit that outputs an opening operation signal for performing an opening operation on the opening / closing unit and a closing operation signal for performing a closing operation at a preset time, and after outputting the opening operation signal, the supply flow rate. Calculates the integrated amount of the processing fluid based on the measurement result of the measurement unit when the flow rate changes to a preset flow rate, and outputs the opening operation signal or the closing operation signal based on the calculated integrated amount. The control unit performing output time change processing to change the time to perform from the preset time ;
With
The control unit includes:
The actual elapsed time from when the opening operation signal is output to when the integrated amount reaches the preset target integrated amount is measured, and the actual elapsed time measured and a preset corresponding to the target integrated amount are measured. Monitor the deviation amount from the target elapsed time, perform the output time change process based on the deviation amount,
The time from when the open operation signal is output to when the processing fluid reaches the surface of the object to be processed is such that the times at which the open operation signal is output are such that the times are equal among the nozzles of the plurality of chambers. A processing apparatus characterized in that the processing is changed in the plurality of chambers . A plurality of chambers accommodating the object to be processed,
A nozzle provided at least one in the chamber, for supplying a processing fluid toward the object to be processed;
A measuring unit for measuring a supply flow rate of the processing fluid supplied to the nozzle,
An opening and closing unit for opening and closing the flow path of the processing fluid supplied to the nozzle,
A control unit that outputs an opening operation signal for performing an opening operation on the opening / closing unit and a closing operation signal for performing a closing operation at a preset time, and after outputting the opening operation signal, the supply flow rate. Calculates the integrated amount of the processing fluid based on the measurement result of the measurement unit when the flow rate changes to a preset flow rate, and outputs the opening operation signal or the closing operation signal based on the calculated integrated amount. The control unit performing output time change processing to change the time to perform from the preset time ;
With
The control unit includes:
The actual elapsed time from when the opening operation signal is output to when the integrated amount reaches the preset target integrated amount is measured, and the actual elapsed time measured and a preset corresponding to the target integrated amount are measured. Monitor the deviation amount from the target elapsed time, perform the output time change process based on the deviation amount,
Of the nozzles provided in the plurality of chambers, the nozzle at which the processing fluid reaches the surface of the processing target after the output of the opening operation signal is the latest nozzle is set as a reference nozzle, and each of the other nozzles is used as a reference nozzle. A timing for outputting the opening operation signal is delayed based on the shift amount such that the arrival time of the reference nozzle coincides with the arrival time of the reference nozzle . A plurality of chambers accommodating the object to be processed,
A nozzle provided at least one in the chamber, for supplying a processing fluid toward the object to be processed;
A measuring unit for measuring a supply flow rate of the processing fluid supplied to the nozzle,
An opening and closing unit for opening and closing the flow path of the processing fluid supplied to the nozzle,
A control unit that outputs an opening operation signal for performing an opening operation on the opening / closing unit and a closing operation signal for performing a closing operation at a preset time, and after outputting the opening operation signal, the supply flow rate. Calculates the integrated amount of the processing fluid based on the measurement result of the measurement unit when the flow rate changes to a preset flow rate, and outputs the opening operation signal or the closing operation signal based on the calculated integrated amount. The control unit performing output time change processing to change the time to perform from the preset time ;
With
The control unit includes:
The actual elapsed time from when the opening operation signal is output to when the integrated amount reaches the preset target integrated amount is measured, and the actual elapsed time measured and a preset corresponding to the target integrated amount are measured. Monitor the deviation amount from the target elapsed time, perform the output time change process based on the deviation amount,
Of the nozzles provided in the plurality of chambers, the earliest arrival time at which the processing fluid reaches the surface of the processing target after outputting the opening operation signal is set as the reference nozzle, and the other nozzles The processing device according to claim 1, wherein the time at which the opening operation signal is output is advanced based on the shift amount so that the arrival time of the reference nozzle coincides with the arrival time of the reference nozzle . A plurality of chambers accommodating the object to be processed,
A nozzle provided at least one in the chamber, for supplying a processing fluid toward the object to be processed;
A measuring unit for measuring a supply flow rate of the processing fluid supplied to the nozzle,
An opening and closing unit for opening and closing the flow path of the processing fluid supplied to the nozzle,
A control unit that outputs an opening operation signal for performing an opening operation on the opening / closing unit and a closing operation signal for performing a closing operation at a preset time, and after outputting the opening operation signal, the supply flow rate. Calculates the integrated amount of the processing fluid based on the measurement result of the measurement unit when the flow rate changes to a preset flow rate, and outputs the opening operation signal or the closing operation signal based on the calculated integrated amount. The control unit performing output time change processing to change the time to perform from the preset time ;
With
The control unit includes:
The actual elapsed time from when the opening operation signal is output to when the integrated amount reaches the preset target integrated amount is measured, and the actual elapsed time measured and a preset corresponding to the target integrated amount are measured. Monitor the amount of deviation from the target elapsed time, perform the output time change process to change the time to output the closing operation signal from the preset time based on the amount of deviation,
The time from when the processing fluid reaches the object to output the closing operation signal until the time when the closing operation signal is output is determined between the nozzles of the plurality of chambers. A processing device characterized in that it is changed in (1) . The processing fluid includes a chemical solution and a rinsing solution,
The opening and closing unit is
A first valve for opening and closing the flow path of the chemical solution;
A second valve for opening and closing the rinse liquid flow path;
The control unit includes:
By outputting the opening operation signal and the closing operation signal to the first valve and the second valve at a preset time, the chemical liquid and the rinsing liquid are supplied to the object in this order. ,
The time from when the chemical solution reaches the target object to when the closing operation signal is output is such that the time when the closing operation signal is output to the first valve is such that the time is equal between nozzles of a plurality of chambers. The processing apparatus according to claim 4 , wherein the processing is changed in a plurality of chambers. The chemical liquid and the rinse liquid are continuously supplied from the nozzle,
The control unit includes:
The actual elapsed time of the second valve from the output of the opening operation signal to the second valve until the integrated amount reaches the preset target flow rate value is measured, and the measured elapsed time of the second valve is measured. A difference between an actual elapsed time and a target elapsed time of the second valve corresponding to the target integration amount is monitored, and a time point at which the opening operation signal is output to the second valve is changed. 6. The processing device according to 5 . A chamber for accommodating the object to be processed;
A nozzle provided at least one in the chamber, for supplying a processing fluid toward the object to be processed;
A measuring unit for measuring a supply flow rate of the processing fluid supplied to the nozzle,
An opening and closing unit for opening and closing the flow path of the processing fluid supplied to the nozzle,
A control unit that outputs an opening operation signal for performing an opening operation on the opening / closing unit and a closing operation signal for performing a closing operation at a preset time, and after outputting the opening operation signal, the supply flow rate. Calculates the integrated amount of the processing fluid based on the measurement result of the measurement unit when the flow rate changes to a preset flow rate, and outputs the opening operation signal or the closing operation signal based on the calculated integrated amount. The control unit that performs an output time point changing process of changing a time point to be changed from the preset time point ,
A storage unit for storing the integrated amount;
A flow rate adjustment unit disposed on the upstream side of the opening / closing unit and adjusting a flow rate of the processing fluid flowing through the flow path.
With
The control unit includes:
By controlling the flow rate adjusting unit, before supplying the processing fluid to the nozzle, the flow path is opened at an initial opening degree, and when supplying the processing fluid to the nozzle, the flow rate is set to the preset flow rate. Adjusting the degree of opening of the flow path so that
A process of storing the actual elapsed time from the output of the opening operation signal until the integrated amount reaches the preset target integrated amount in the storage unit, and the actual elapsed time stored in the storage unit. A process of changing the initial opening of the flow rate adjusting unit after supplying the processing fluid to the nozzle based on the processing fluid . A plurality of chambers accommodating the object to be processed, a nozzle provided in at least one of the chambers for supplying a processing fluid toward the object to be processed, and a supply flow rate of the processing fluid supplied to the nozzle is measured. Using a processing device including a measurement unit and an opening and closing unit that opens and closes the flow path of the processing fluid supplied to the nozzle, the opening and closing unit performs an opening operation signal and a closing operation to perform an opening operation. a control step of outputting at the time of the preset closing signal, after the output of the opening operation signal, on the basis of the measurement portion of the measurement results when the supply flow rate is changed to the preset flow rate An output time point for calculating the integrated amount of the processing fluid and changing a time point at which the open operation signal or the close operation signal is output from the preset time point based on the calculated integrated amount. Said control step of performing further processing and
Including
The control step includes:
The actual elapsed time from when the opening operation signal is output to when the integrated amount reaches the preset target integrated amount is measured, and the actual elapsed time measured and a preset corresponding to the target integrated amount are measured. Monitor the deviation amount from the target elapsed time, perform the output time change process based on the deviation amount,
The time from when the open operation signal is output to when the processing fluid reaches the surface of the object to be processed is such that the times at which the open operation signal is output are such that the times are equal among the nozzles of the plurality of chambers. A processing method characterized by changing in the plurality of chambers . A plurality of chambers accommodating the object to be processed, a nozzle provided in at least one of the chambers for supplying a processing fluid toward the object to be processed, and a supply flow rate of the processing fluid supplied to the nozzle is measured. Using a processing device including a measurement unit and an opening and closing unit that opens and closes the flow path of the processing fluid supplied to the nozzle, the opening and closing unit performs an opening operation signal and a closing operation to perform an opening operation. a control step of outputting at the time of the preset closing signal, after the output of the opening operation signal, on the basis of the measurement portion of the measurement results when the supply flow rate is changed to the preset flow rate An output time point for calculating the integrated amount of the processing fluid and changing a time point at which the open operation signal or the close operation signal is output from the preset time point based on the calculated integrated amount. Said control step of performing further processing and
Including
The control step includes:
The actual elapsed time from when the opening operation signal is output to when the integrated amount reaches the preset target integrated amount is measured, and the actual elapsed time measured and a preset corresponding to the target integrated amount are measured. Monitor the deviation amount from the target elapsed time, perform the output time change process based on the deviation amount,
Of the nozzles provided in the plurality of chambers, the nozzle at which the processing fluid reaches the surface of the processing target after the output of the opening operation signal is the latest nozzle is set as a reference nozzle, and each of the other nozzles is used as a reference nozzle. The processing method according to claim 1, wherein a time point at which the opening operation signal is output is delayed based on the shift amount so that the arrival time point in (c) coincides with the arrival time point of the reference nozzle . A plurality of chambers accommodating the object to be processed, a nozzle provided in at least one of the chambers for supplying a processing fluid toward the object to be processed, and a supply flow rate of the processing fluid supplied to the nozzle is measured. Using a processing device including a measurement unit and an opening and closing unit that opens and closes the flow path of the processing fluid supplied to the nozzle, the opening and closing unit performs an opening operation signal and a closing operation to perform an opening operation. a control step of outputting at the time of the preset closing signal, after the output of the opening operation signal, on the basis of the measurement portion of the measurement results when the supply flow rate is changed to the preset flow rate An output time point for calculating the integrated amount of the processing fluid and changing a time point at which the open operation signal or the close operation signal is output from the preset time point based on the calculated integrated amount. Said control step of performing further processing and
Including
The control step includes:
The actual elapsed time from when the opening operation signal is output to when the integrated amount reaches the preset target integrated amount is measured, and the actual elapsed time measured and a preset corresponding to the target integrated amount are measured. Monitor the deviation amount from the target elapsed time, perform the output time change process based on the deviation amount,
Of the nozzles provided in the plurality of chambers, the earliest arrival time at which the processing fluid reaches the surface of the processing target after outputting the opening operation signal is set as the reference nozzle, and the other nozzles A timing of outputting the opening operation signal based on the shift amount so that the arrival time of the reference nozzle coincides with the arrival time of the reference nozzle . A plurality of chambers accommodating the object to be processed, a nozzle provided in at least one of the chambers for supplying a processing fluid toward the object to be processed, and a supply flow rate of the processing fluid supplied to the nozzle is measured. Using a processing device including a measurement unit and an opening and closing unit that opens and closes the flow path of the processing fluid supplied to the nozzle, the opening and closing unit performs an opening operation signal and a closing operation to perform an opening operation. a control step of outputting at the time of the preset closing signal, after the output of the opening operation signal, on the basis of the measurement portion of the measurement results when the supply flow rate is changed to the preset flow rate An output time point for calculating the integrated amount of the processing fluid and changing a time point at which the open operation signal or the close operation signal is output from the preset time point based on the calculated integrated amount. Said control step of performing further processing and
Including
The control step includes:
The actual elapsed time from when the opening operation signal is output to when the integrated amount reaches the preset target integrated amount is measured, and the actual elapsed time measured and a preset corresponding to the target integrated amount are measured. Monitor the amount of deviation from the target elapsed time, perform the output time change processing based on the amount of deviation to change the time to output the closing operation signal from the preset time,
The time from when the processing fluid reaches the object to output the closing operation signal until the time when the closing operation signal is output is determined between the nozzles of the plurality of chambers. A processing method characterized by changing in (1) .   The processing fluid includes a chemical solution and a rinsing solution,
  The opening and closing unit is
  A first valve for opening and closing the flow path of the chemical solution;
  A second valve for opening and closing the rinsing liquid flow path;
  Further comprising
  The control step includes:
  By outputting the opening operation signal and the closing operation signal to the first valve and the second valve at a preset time, the chemical liquid and the rinsing liquid are supplied to the object in this order. ,
  The time from when the chemical solution reaches the target object to when the closing operation signal is output is such that the time when the closing operation signal is output to the first valve is such that the time is equal between nozzles of a plurality of chambers. Changing in multiple chambers
  The processing method according to claim 11, wherein:   The chemical liquid and the rinse liquid are continuously supplied from the nozzle,
  The control step includes:
  The actual elapsed time of the second valve from the output of the opening operation signal to the second valve until the integrated amount reaches the preset target flow rate value is measured, and the measured elapsed time of the second valve is measured. Monitoring a deviation amount between an actual elapsed time and a target elapsed time of the second valve corresponding to the target integration amount, and changing a time point at which the opening operation signal is output to the second valve.
  13. The processing method according to claim 12, wherein: A plurality of chambers accommodating the object to be processed, a nozzle provided in at least one of the chambers for supplying a processing fluid toward the object to be processed, and a supply flow rate of the processing fluid supplied to the nozzle is measured. Using a processing device including a measurement unit and an opening and closing unit that opens and closes the flow path of the processing fluid supplied to the nozzle, the opening and closing unit performs an opening operation signal and a closing operation to perform an opening operation. a control step of outputting at the time of the preset closing signal, after the output of the opening operation signal, on the basis of the measurement portion of the measurement results when the supply flow rate is changed to the preset flow rate An output time point for calculating the integrated amount of the processing fluid and changing a time point at which the open operation signal or the close operation signal is output from the preset time point based on the calculated integrated amount. Said control step of performing further processing,
A storage step of storing the integrated amount, wherein the storage step of storing the actual elapsed time from when the open operation signal is output to when the integrated amount reaches a preset target integrated amount in a storage unit; ,
A flow adjusting step of adjusting a flow rate of the processing fluid flowing through the flow path by using a flow adjusting section disposed on an upstream side of the opening / closing section, wherein the flow rate is adjusted before the processing fluid is supplied to the nozzle. Opening the passage at an initial opening degree, and adjusting the opening degree of the flow path so as to have the preset flow rate when supplying the processing fluid to the nozzle, the flow rate adjusting step;
Including
The flow rate adjusting step,
A processing method , wherein the initial opening degree of the flow rate adjusting unit is changed after supplying the processing fluid to the nozzle based on the actual elapsed time accumulated in the storage unit . A computer-readable storage medium that operates on a computer and stores a program for controlling the processing device,
A storage medium, wherein the program causes a computer to control the processing device such that the processing method according to any one of claims 8 to 14 is performed when the program is executed.

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