JP2018113670A - 調和同調の負荷被変調増幅器 - Google Patents
調和同調の負荷被変調増幅器 Download PDFInfo
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- H03F1/56—Modifications of input or output impedances, not otherwise provided for
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- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
- H03F3/602—Combinations of several amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0288—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers using a main and one or several auxiliary peaking amplifiers whereby the load is connected to the main amplifier using an impedance inverter, e.g. Doherty amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0294—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers using vector summing of two or more constant amplitude phase-modulated signals
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
- H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
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- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
- H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
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- H—ELECTRICITY
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- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
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- H—ELECTRICITY
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- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
- H03F2203/21103—An impedance adaptation circuit being added at the input of a power amplifier stage
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
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- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
- H03F2203/21106—An input signal being distributed in parallel over the inputs of a plurality of power amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
- H03F2203/21139—An impedance adaptation circuit being added at the output of a power amplifier stage
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- H—ELECTRICITY
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- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
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- H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
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Abstract
【解決手段】各増幅パスは、増幅器と、増幅器と接合器間に提供されたマッチングネットワークとを備える。個々の増幅器は、結合器を通じて相互に作用することができ、アクティブロードプル効果をもたらす。増幅パスのマッチングネットワークは、マッチングネットワークに接続された増幅器内の電圧と電流の波形間の重なりを減らし、1つまたは複数の増幅器の線形性を向上させる1つまたは複数に構成された高調波終端を備える。
【選択図】図10
Description
1つの実施形態において、異なる増幅器は、異なる動作モードで動作する。各増幅器は、所与の/所定の入力信号特性に対して所望の動作モードで動作するように、その高調波終端を通じて最適化される。
PAの効率において負荷変調軌道の影響を評価するために、出力マッチングネットワーク(OMN)によって、およびデイス特定の出力寄生によって影響を受けるデバイスのイントリンシックCGプレーンにおける負荷変調が決定される。図13の負荷プレーン‘A’からCGプレーン‘C’への負荷変調軌道は、アウトフェージングアングルと、出力マッチングネットワークのS-パラメータとの関数として決定可能であり、デバイスの寄生を線形の2つのポートネットワークに近づける。
Claims (10)
- 複数の増幅パスにおいて増幅された信号の結合のための結合器に接続された前記複数の増幅パスを有する増幅器システムにおいて、各増幅パスは、増幅器と、前記増幅器と前記接合器間に提供されたマッチングネットワークとを備え、
個々の前記増幅器は、前記結合器を通じて相互に作用することができ、アクティブロードプル効果をもたらし、
前記増幅パスの前記マッチングネットワークは、1つまたは複数に構成された高調波終端を備え、前記高調波終端は:
前記アクティブロードプル動作において、前記マッチングネットワークに接続された前記増幅器内の電圧と電流の波形間の重なりを減らし、
1つまたは複数の前記増幅器の線形性を向上させる増幅器システム。 - 前記高調波終端は、動的に調整可能である請求項1に記載の増幅器システム。
- RF信号を増幅パスに導入するように構成されたRF信号発生器をさらに備える請求項2に記載の増幅器システム。
- 他の前記増幅パスの前記増幅器における電圧と電流の波形間の前記重なりを減らす方法で、増幅パスの高調波信号内容が他の増幅分岐に伝達されるように、前記結合器の上流側に増幅パスを接続するようにさらに構成された請求項3に記載の増幅器システム。
- 前記増幅パスは、位相シフトネットワークを介して接続される請求項4に記載の増幅器システム。
- 異なる増幅器は、異なる動作モードで動作する請求項1に記載の増幅器システム。
- 入力信号の電力が所定しきい値より下である場合、1つの増幅パスを除いて1つまたは複数または全ての増幅パスを無効にするように構成された請求項1に記載の増幅器システム。
- 入力信号の電力を決定するように構成され、決定された入力電力が所定しきい値より下である場合、前記高調波終端を無効にする請求項1に記載の増幅器システム。
- 請求項1に記載の増幅器システムを備えるシステムにおいて、
前記システムは、基地局、複数の標準基地局、サテライト、モバイルエリアネットワークのノード、および/または無線LANのノードであるシステム。 - 前記システムは、802.11ac WiFi、LTE、LTE−Aおよび/またはDVB−Aシステムである請求項9に記載のシステム。
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US15/406,151 US10224882B2 (en) | 2017-01-13 | 2017-01-13 | Harmonically tuned load modulated amplifier |
US15/406,151 | 2017-01-13 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018133698A (ja) * | 2017-02-15 | 2018-08-23 | 日本無線株式会社 | 電力増幅器 |
WO2020246029A1 (ja) * | 2019-06-07 | 2020-12-10 | 三菱電機株式会社 | ドハティ増幅器 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10361744B1 (en) * | 2018-03-05 | 2019-07-23 | Qorvo Us, Inc. | Transceiver circuit and related radio frequency circuit |
CN116915196B (zh) * | 2023-09-11 | 2023-12-08 | 合肥芯谷微电子股份有限公司 | 一种功率放大器 |
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JPS63153904A (ja) * | 1986-07-30 | 1988-06-27 | Nippon Telegr & Teleph Corp <Ntt> | 電力増幅器 |
JPH0746063A (ja) * | 1993-07-28 | 1995-02-14 | Sumitomo Electric Ind Ltd | 高効率高周波高出力増幅器 |
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JP2014175824A (ja) * | 2013-03-08 | 2014-09-22 | Panasonic Corp | ドハティ増幅器 |
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- 2017-01-13 US US15/406,151 patent/US10224882B2/en active Active
- 2017-10-18 JP JP2017201839A patent/JP2018113670A/ja active Pending
Patent Citations (7)
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JPS63153904A (ja) * | 1986-07-30 | 1988-06-27 | Nippon Telegr & Teleph Corp <Ntt> | 電力増幅器 |
JPH0746063A (ja) * | 1993-07-28 | 1995-02-14 | Sumitomo Electric Ind Ltd | 高効率高周波高出力増幅器 |
JP2004120086A (ja) * | 2002-09-24 | 2004-04-15 | Mitsubishi Electric Corp | 高周波電力増幅器 |
JP2005303771A (ja) * | 2004-04-14 | 2005-10-27 | Mitsubishi Electric Corp | 高周波電力増幅器 |
JP2008199625A (ja) * | 2007-02-14 | 2008-08-28 | Postech Academy-Industry Foundation | ハーモニック制御回路を用いた高効率ドハティ電力増幅器 |
JP2010268248A (ja) * | 2009-05-14 | 2010-11-25 | Tokyo Keiki Inc | 交流電力増幅器 |
JP2014175824A (ja) * | 2013-03-08 | 2014-09-22 | Panasonic Corp | ドハティ増幅器 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2018133698A (ja) * | 2017-02-15 | 2018-08-23 | 日本無線株式会社 | 電力増幅器 |
WO2020246029A1 (ja) * | 2019-06-07 | 2020-12-10 | 三菱電機株式会社 | ドハティ増幅器 |
JPWO2020246029A1 (ja) * | 2019-06-07 | 2021-09-30 | 三菱電機株式会社 | ドハティ増幅器 |
JP7003329B2 (ja) | 2019-06-07 | 2022-01-20 | 三菱電機株式会社 | ドハティ増幅器 |
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US20180205346A1 (en) | 2018-07-19 |
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