JP2018107425A - Manufacturing method for work-piece - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a manufacturing method for a work-piece which is not affected by interlayer exfoliation in a semiconductor wafer processing sheet, due to the fact that the sheet is preserved while being wound in a roll, during manufacturing of the work-piece using a semiconductor wafer, capable of suppressing occurrence of a dimple and a crack while grinding the semiconductor wafer, and capable of suppressing protrusion of a curable resin layer at an end.SOLUTION: A manufacturing method for a work-piece 501 has a step of sticking a back grinding tape 1 to a first surface 50a of a semiconductor wafer 50' having bumps 51, a step of grinding a second surface 50b' at an opposite side to the first surface of the semiconductor wafer to which the back grinding tape is stuck, a step of exfoliating the back grinding tape from the first surface of the semiconductor wafer having the ground second surface, and a step of sticking a curable resin film 13 to the first surface of the semiconductor wafer from which the back grinding tape is exfoliated.SELECTED DRAWING: Figure 4

Description

  The present invention relates to a method for manufacturing a workpiece.

  Conventionally, when a multi-pin LSI package used for an MPU, a gate array or the like is mounted on a printed wiring board, a projecting electrode (bump) made of eutectic solder, high-temperature solder, gold or the like is formed as a semiconductor chip on its connection pad portion. The flip chip mounting method has been employed in which the bumps are brought into contact with the corresponding terminal portions on the chip mounting substrate in a so-called face-down manner, and are melted / diffusion bonded. .

  A semiconductor chip used in this mounting method is obtained, for example, by grinding a surface of a semiconductor wafer having bumps formed on the circuit surface on the side opposite to the circuit surface, and dicing into pieces. In the process of obtaining such a semiconductor chip, usually, a back grind tape is applied to the surface of the semiconductor wafer on which bumps are formed (in this specification, sometimes referred to as “bump formation surface”). The surface opposite to the bump forming surface is ground. Further, for the purpose of protecting the circuit surface and bumps of the semiconductor wafer, a curable resin film is attached to the bump forming surface, and the film is cured to form a protective film on the bump forming surface. That is, in the process of obtaining a semiconductor chip having a bump forming surface, there are both a stage in which a back grind tape is applied to a bump forming surface of a semiconductor wafer and a stage in which a curable resin film is applied. .

  Conventionally, in order to facilitate the manufacture of semiconductor chips by such a method, a semiconductor wafer processing sheet having an integrated structure in which a back grind tape and a curable resin film are laminated is used. (See Patent Document 1). FIG. 9 is a cross-sectional view schematically showing an example of such a conventional semiconductor wafer processing sheet.

  The semiconductor wafer processing sheet 9 shown here includes a curable resin layer (curable resin film) 13 on the back grind tape 1 and a release film 94 on the curable resin layer 13. The back grind tape 1 includes a first pressure-sensitive adhesive layer 12 on a first base material 11. That is, the semiconductor wafer processing sheet 9 is configured by laminating the first base material 11, the first pressure-sensitive adhesive layer 12, the curable resin layer 13 and the release film 94 in this order in the thickness direction. .

An example of a method for using the semiconductor wafer processing sheet 9 is shown below.
First, the release film 94 is removed, and the exposed curable resin layer 13 is affixed to the bump forming surface of the semiconductor wafer, so that a laminated sheet having a laminated structure of the back grind tape 1 and the curable resin layer 13 is affixed to the semiconductor wafer. Match.
Next, the surface of the semiconductor wafer opposite to the bump forming surface is ground.
Next, the back grind tape 1 is peeled from the curable resin layer 13 and only the back grind tape 1 is removed from the semiconductor wafer. Through the steps so far, a workpiece having a structure in which the semiconductor wafer and the curable resin layer 13 are laminated is obtained.

Next, in the obtained workpiece, the curable resin layer 13 is in close contact with the circuit surface on the bump forming surface, and the bump is embedded so as to cover the surface of the bump, particularly the surface in the vicinity of the circuit surface. Further, a second protective film forming film is attached to the ground surface of the semiconductor wafer opposite to the bump forming surface. The second protective film-forming film forms a second protective film by curing and protects the ground surface.
Next, the second protective film-forming film is cured to form a second protective film, and a dicing sheet is attached to the second protective film. Then, the semiconductor wafer is diced together with the curable resin layer 13 to form individual chips, thereby forming semiconductor chips. The curable resin layer 13 is cured at an appropriate timing to form a first protective film, and thereafter, a semiconductor device is manufactured using a semiconductor chip including the first protective film and the second protective film.

  The second protective film-forming film is not used alone as described above, but is used as a second protective film-forming composite sheet that is integrated with the dicing sheet and attached to a semiconductor wafer. There is.

JP 2005-028734 A

However, when such a conventional sheet for processing a semiconductor wafer is used, there are the following problems at the time of manufacturing a target workpiece.
First, a conventional semiconductor wafer processing sheet is usually wound into a roll and stored refrigerated. The reason why cooling is necessary during storage is that the flexibility of the curable resin layer is relatively high. When the semiconductor wafer processing sheet is unwound from a roll and used, the temperature of the semiconductor wafer processing sheet is kept at room temperature. Will return. On the other hand, a conventional semiconductor wafer processing sheet has a structure in which a back grind tape and a curable resin layer (curable resin film) are laminated, and thus has a relatively large thickness. Thus, when a thick semiconductor wafer processing sheet is rolled up and stored in a refrigerator, delamination between the release film and the curable resin layer tends to occur mainly in the width direction of the sheet ( In addition, delamination extends from the delamination site to the peripheral region and is likely to appear (also referred to as “streak”). In the semiconductor wafer processing sheet in which such delamination has occurred, the surface of the curable resin layer becomes an uneven surface when used from a roll, and the use of a sheet having such an uneven surface is affected by this. Thus, when the semiconductor wafer is ground as described above, the ground surface may be uneven.

  Further, as described above, the semiconductor wafer processing sheet is bonded to the semiconductor wafer by the curable resin layer, and in this state, the surface opposite to the bump forming surface of the semiconductor wafer is ground. However, after the curable resin layer is usually applied to the bump forming surface, the fluidity increases by heating, spreads between the bumps, adheres to the circuit surface, and the surface of the bump, particularly in the vicinity of the circuit surface. It is designed to cover the surface and embed bumps, and it becomes more flexible when heated. Therefore, heat is generated during grinding of the target surface of the semiconductor wafer, and this heat increases the flexibility of the curable resin layer, making the semiconductor wafer easy to move, and as a result, the ground surface becomes rough and easily becomes uneven. . In particular, when a concave portion is generated at a portion corresponding to a bump formation portion (also referred to as “dimple”), a crack may be generated from the starting point (also referred to as “crack”), and the semiconductor wafer may be damaged.

  In addition, the curable resin layer of the semiconductor wafer processing sheet is heated at the time of grinding the semiconductor wafer as described above, and becomes flexible, so that the curable resin layer is not May sag and protrude. When such a protrusion of the curable resin layer occurs, a process abnormality may occur during the subsequent manufacture of the workpiece.

  Therefore, the present invention has the above-described problem, that is, the influence of delamination on the sheet caused by winding and storing the sheet for semiconductor wafer processing in the production of a workpiece using a semiconductor wafer. Therefore, an object of the present invention is to provide a method for manufacturing a workpiece that can suppress the occurrence of dimples and cracks during grinding of a semiconductor wafer and suppress the protrusion of the end portion of a curable resin layer.

In order to solve the above problems, the present invention provides a step (P1) of applying a back grind tape to a first surface of a semiconductor wafer having bumps, and a semiconductor wafer having the back grind tape applied to the first surface. A step (P2) of grinding a second surface opposite to the first surface, and a step (P3) of peeling the back grind tape from the first surface of the semiconductor wafer ground on the second surface. And a step (P4) of attaching a curable resin film to the first surface side of the semiconductor wafer from which the back grind tape has been peeled off.
In the workpiece manufacturing method of the present invention, a second protective film-forming film is further adhered to the second surface of the ground semiconductor wafer between the step (P2) and the step (P3). It is preferable to have a process (P5).
The present invention is also directed to a means for attaching a back grind tape to a first surface having bumps of a semiconductor wafer and a semiconductor wafer having the back grind tape attached to the first surface opposite to the first surface. Means for grinding the second surface on the side, means for peeling the back grind tape from the first surface of the semiconductor wafer ground on the second surface, and the semiconductor wafer on which the back grind tape is peeled off There is provided a workpiece manufacturing apparatus including means for attaching a curable resin film to a first surface side.

  According to the present invention, at the time of manufacturing a workpiece using a semiconductor wafer, the semiconductor wafer is not affected by delamination on the sheet caused by winding and storing the semiconductor wafer processing sheet in a roll shape. During grinding, there is provided a method for manufacturing a workpiece that can suppress the occurrence of dimples and cracks, and can suppress the protrusion at the end of the curable resin layer.

It is sectional drawing which shows typically an example of the thing provided with the back grind tape among the sheets for semiconductor wafer processing used with the manufacturing method of this invention. It is sectional drawing which shows typically an example of the thing provided with the curable resin film among the sheets for semiconductor wafer processing used with the manufacturing method of this invention. It is sectional drawing which shows typically an example of the thing provided with the film for 2nd protective film formation among the sheets for semiconductor wafer processing used with the manufacturing method of this invention. It is sectional drawing for demonstrating typically one Embodiment of the manufacturing method of the workpiece | work of this invention. It is sectional drawing which shows typically the other example of the workpiece | work obtained with the manufacturing method of this invention. It is sectional drawing which shows typically the further another example of the workpiece | work obtained with the manufacturing method of this invention. It is sectional drawing which shows typically the further another example of the workpiece | work obtained with the manufacturing method of this invention. It is sectional drawing which shows typically the further another example of the workpiece | work obtained with the manufacturing method of this invention. It is sectional drawing which shows typically an example of the conventional sheet | seat for semiconductor wafer processing.

<< Workpiece manufacturing method >>
The method of manufacturing a workpiece according to the present invention includes a step (P1) of attaching a back grind tape to a first surface having bumps of a semiconductor wafer, and the semiconductor wafer having the back grind tape affixed to the first surface. A step (P2) of grinding a second surface opposite to the first surface, a step (P3) of peeling the back grind tape from the first surface of the semiconductor wafer ground on the second surface, A step (P4) of attaching a curable resin film to the first surface side of the semiconductor wafer from which the back grind tape has been peeled off.

  In the manufacturing method of the present invention, as a semiconductor wafer processing sheet, a conventional back grind tape and a curable resin film are laminated and integrated, and the back grind tape and the curable resin film are separately used. Use what was done. As described above, according to the manufacturing method, a semiconductor wafer processing sheet provided with a back grind tape (in this specification, sometimes referred to as “semiconductor wafer processing sheet (S1)”), a curable resin film The semiconductor wafer processing sheet provided with (sometimes referred to as “semiconductor wafer processing sheet (S2)” in this specification) is used separately, but since these sheets are thin, these sheets are used. Even when wound and stored in a roll, the occurrence of delamination (tunneling, streaks) is suppressed. As a result, the surface of the back grind tape and the curable resin film is also prevented from being uneven, and for example, the occurrence of unevenness is also suppressed on the ground surface of the semiconductor wafer.

  In the manufacturing method of the present invention, when the surface (second surface) opposite to the bump formation surface (first surface) of the semiconductor wafer is ground, a curable resin film ( There is no curable resin layer), and a back grind tape having characteristics suitable for use during grinding is directly applied. Therefore, according to the manufacturing method, even when heat is generated when the surface opposite to the bump forming surface of the semiconductor wafer is ground, there is no curable resin film (curable resin layer). The movement of the wafer is suppressed, the roughness of the ground surface is suppressed, and the occurrence of dimples and cracks in the semiconductor wafer is suppressed.

  Moreover, in the said manufacturing method of this invention, when grinding a semiconductor wafer as above-mentioned, the curable resin film (curable resin layer) does not exist in the said bump formation surface (1st surface). Therefore, according to the said manufacturing method, the protrusion by the dripping of the curable resin film cannot occur in the site | part in which a position corresponds with the edge part of a semiconductor wafer at the time of grinding of a semiconductor wafer.

In this specification, “workpiece” means “a laminate having a structure in which a semiconductor wafer and a curable resin film (curable resin layer) or a first protective film are laminated unless otherwise specified. "Means. Here, the curable resin film (curable resin layer) is for forming the first protective film by curing on the bump forming surface.
Further, “grinding of the semiconductor wafer” means “grinding of the surface opposite to the bump forming surface of the semiconductor wafer” unless otherwise specified.
In addition, the “curable resin film” may be referred to as a “curable resin layer” when it is in a state of being laminated with other layers.

First, the semiconductor wafer processing sheet used in the manufacturing method of the present invention will be described in detail with reference to the drawings.
In addition, in order to make the features of the present invention easier to understand, the drawings used in the following description may show the main portions in an enlarged manner for convenience, and the dimensional ratios of the respective components are the same as the actual ones. Not necessarily.

◎ Semiconductor wafer processing sheet (S1)
FIG. 1 is a cross-sectional view schematically showing an example of a semiconductor wafer processing sheet (semiconductor wafer processing sheet (S1)) provided with a back grind tape among the semiconductor wafer processing sheets used in the manufacturing method of the present invention.
The semiconductor wafer processing sheet 8 shown here comprises a release film 94 on the back grind tape 1. The back grind tape 1 includes a first pressure-sensitive adhesive layer 12 on a first base material 11. That is, the semiconductor wafer processing sheet 8 is configured by laminating the first base material 11, the first pressure-sensitive adhesive layer 12, and the release film 94 in this order in the thickness direction.

The back grind tape 1 (that is, the first base material 11 and the first pressure-sensitive adhesive layer 12) may be the same as a known back grind tape.
The release film 94 may also be a known one.

For example, the 1st base material 11 is a sheet form or a film form, and as a constituent material, various resin is mentioned, for example.
The 1st adhesive layer 12 is a sheet form or a film form, and contains an adhesive.

Each of the first base material 11 and the first pressure-sensitive adhesive layer 12 may be only one layer (single layer), or may be two or more layers. In the case of a plurality of layers, these layers may be the same as each other. They may be different, and the combination of these multiple layers is not particularly limited.
In the present specification, not only the first base material and the first pressure-sensitive adhesive layer, but “a plurality of layers may be the same as or different from each other” means “even if all the layers are the same. All layers may be different or only some of the layers may be the same, and “a plurality of layers are different from each other” means “the constituent material and thickness of each layer” At least one of them is different from each other.

It is preferable that the thickness of the 1st base material 11 is 5-1000 micrometers.
Here, the “thickness of the first base material” means the thickness of the entire first base material. For example, the thickness of the first base material composed of a plurality of layers means all of the first base material. Means the total thickness of the layers.

It is preferable that the thickness of the 1st adhesive layer 12 is 1-1000 micrometers.
Here, the “thickness of the first pressure-sensitive adhesive layer” means the thickness of the entire first pressure-sensitive adhesive layer. For example, the thickness of the first pressure-sensitive adhesive layer composed of a plurality of layers means the first pressure-sensitive adhesive layer. Means the total thickness of all the layers that make up.

The semiconductor wafer processing sheet 8 can be manufactured by a known method.
For example, the composition for forming the first pressure-sensitive adhesive layer 12 is coated on the first substrate 11 and dried as necessary, or the composition is applied to the release-treated surface of the release film. The first pressure-sensitive adhesive layer 12 is formed on the first base material 11 by applying the coating layer and drying it as necessary, and bonding the obtained coating layer onto the first base material 11. Next, the exposed surface of the first pressure-sensitive adhesive layer 12 (the surface on the side not provided with the first base material 11) is bonded to the release treatment surface of the release film 94, whereby the semiconductor wafer processing sheet 8 is obtained.
Moreover, for example, the composition for forming the first pressure-sensitive adhesive layer 12 is coated on the release-treated surface of the release film 94 and dried as necessary, whereby the first pressure-sensitive adhesive is formed on the release film 94. Layer 12 is formed. Next, the semiconductor wafer processing sheet 8 can also be obtained by bonding the exposed surface of the first pressure-sensitive adhesive layer 12 (the surface on the side not provided with the release film 94) to the first base material 11.
When the first base material contains a resin, the first base material can be produced by molding the resin composition containing the resin.

◎ Semiconductor wafer processing sheet (S2)
FIG. 2 is a cross-sectional view schematically showing an example of a semiconductor wafer processing sheet (semiconductor wafer processing sheet (S2)) provided with a curable resin film among the semiconductor wafer processing sheets used in the manufacturing method of the present invention.
In FIG. 2 and subsequent figures, the same components as those shown in the already explained figures are given the same reference numerals as those in the already explained figures, and their detailed explanations are omitted.

  The semiconductor wafer processing sheet 7 shown here includes a release film 94 on both sides of the curable resin film 13. That is, the semiconductor wafer processing sheet 7 is configured by laminating the release film 94, the curable resin film 13, and the release film 94 in this order in the thickness direction.

In the semiconductor wafer processing sheet 7, the two release films 94, 94 may be the same as or different from each other.
The curable resin film 13 and the release film 94 may be known ones.

The curable resin film 13 is configured to form a first protective film by curing.
The curable resin film 13 may be either a thermosetting resin film (thermosetting resin layer) or an energy beam curable resin film (energy beam curable resin layer).
The curable resin film 13 can be formed using a curable resin film-forming composition containing the constituent materials.

In the present specification, “energy beam” means an electromagnetic wave or charged particle beam having energy quanta, and examples thereof include ultraviolet rays, radiation, and electron beams.
Ultraviolet rays can be irradiated by using, for example, a high-pressure mercury lamp, a fusion H lamp, a xenon lamp, a black light, an LED lamp, or the like as an ultraviolet ray source. The electron beam can be emitted by an electron beam accelerator or the like.
In this specification, “energy ray curable” means a property that cures when irradiated with energy rays, and “non-energy ray curable” means a property that does not cure even when irradiated with energy rays. To do.

  The curable resin film 13 may be only one layer (single layer), or may be two or more layers. In the case of a plurality of layers, these layers may be the same or different from each other. The combination of is not particularly limited.

The thickness of the curable resin film 13 is preferably 1 to 100 μm.
Here, the “thickness of the curable resin film” means the thickness of the entire curable resin film. For example, the thickness of the curable resin film composed of a plurality of layers means all of the curable resin film. Means the total thickness of the layers.
Hereinafter, the thermosetting resin film and the energy beam curable resin film will be described more specifically.

<Thermosetting resin film>
Preferred examples of the thermosetting resin film include those containing a polymer component (A) and a thermosetting component (B). The polymer component (A) is a component that can be regarded as formed by polymerization reaction of the polymerizable compound. The thermosetting component (B) is a component that can undergo a curing (polymerization) reaction using heat as a reaction trigger. In the present invention, the polymerization reaction includes a polycondensation reaction.

[Composition for forming thermosetting resin film]
A thermosetting resin film can be formed using the composition for thermosetting resin film formation containing the constituent material.
Examples of the thermosetting resin film-forming composition include a thermosetting resin film-forming composition (III-1) containing a polymer component (A) and a thermosetting component (B) (in the present specification). May simply be abbreviated as “composition (III-1)”).

The polymer component (A) is a polymer compound for imparting film forming property, flexibility, etc. to the thermosetting resin film, and does not correspond to the epoxy resin (B1) and the thermosetting agent (B2) described later. It is also an ingredient.
Examples of the polymer component (A) include acrylic resins, polyesters, urethane resins, acrylic urethane resins, silicone resins, rubber resins, phenoxy resins, and thermosetting polyimides, and acrylic resins are preferable. .

  In the composition (III-1), the ratio of the content of the polymer component (A) to the total content of all components other than the solvent (that is, the content of the polymer component (A) of the thermosetting resin film). Is preferably 5 to 85% by mass.

A thermosetting component (B) is a component for hardening a thermosetting resin film and forming a hard 1st protective film.
Examples of the thermosetting component (B) include epoxy thermosetting resins, thermosetting polyimides, polyurethanes, unsaturated polyesters, silicone resins, and the like, and epoxy thermosetting resins are preferable.

The epoxy thermosetting resin includes an epoxy resin (B1) and a thermosetting agent (B2).
Examples of the epoxy resin (B1) include known ones such as polyfunctional epoxy resins, biphenyl compounds, bisphenol A diglycidyl ether and hydrogenated products thereof, orthocresol novolac epoxy resins, dicyclopentadiene type epoxy resins, Biphenyl type epoxy resins, bisphenol A type epoxy resins, bisphenol F type epoxy resins, phenylene skeleton type epoxy resins, and the like, and bifunctional or higher functional epoxy compounds are listed.
The thermosetting agent (B2) functions as a curing agent for the epoxy resin (B1).
Among the thermosetting agents (B2), examples of the phenolic curing agent having a phenolic hydroxyl group include polyfunctional phenol resins, biphenols, novolac type phenol resins, dicyclopentadiene type phenol resins, and aralkyl type phenol resins. .
Among the thermosetting agents (B2), examples of the amine-based curing agent having an amino group include dicyandiamide (DICY).

In the composition (III-1) and the thermosetting resin film, the content of the thermosetting agent (B2) is 0.1 to 500 parts by mass with respect to 100 parts by mass of the epoxy resin (B1). It is preferable.
In the composition (III-1) and the thermosetting resin film, the content of the thermosetting component (B) (for example, the total content of the epoxy resin (B1) and the thermosetting agent (B2)) is a polymer component. It is preferable that it is 50-1000 mass parts with respect to 100 mass parts of content of (A).

The composition (III-1) and the thermosetting resin film may contain a curing accelerator (C). The curing accelerator (C) is a component for adjusting the curing rate of the composition (III-1).
Preferred curing accelerators (C) include, for example, tertiary amines such as triethylenediamine, benzyldimethylamine, triethanolamine, dimethylaminoethanol, tris (dimethylaminomethyl) phenol; 2-methylimidazole, 2-phenylimidazole Imidazoles such as 2-phenyl-4-methylimidazole, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole (one or more hydrogen atoms are other than hydrogen atoms) An imidazole substituted with a group of; an organic phosphine such as tributylphosphine, diphenylphosphine, triphenylphosphine (a phosphine having one or more hydrogen atoms substituted with an organic group); tetraphenylphosphonium tetraphenylborate Tetraphenyl boron salts such as triphenyl phosphine tetraphenyl borate and the like.

  When using a hardening accelerator (C), in composition (III-1) and a thermosetting resin film, content of a hardening accelerator (C) is content of 100 mass parts of a thermosetting component (B). On the other hand, it is preferable that it is 0.01-10 mass parts.

  The composition (III-1) and the thermosetting resin film may contain a filler (D). When the thermosetting resin film contains the filler (D), the first protective film obtained by curing the thermosetting resin film can easily adjust the thermal expansion coefficient. By optimizing the object to be formed with one protective film, the reliability of the package obtained using the first protective film is further improved. Moreover, when the thermosetting resin film contains the filler (D), the moisture absorption rate of the first protective film can be reduced, and the heat dissipation can be improved.

The filler (D) may be either an organic filler or an inorganic filler, but is preferably an inorganic filler.
Preferred inorganic fillers include, for example, powders of silica, alumina, talc, calcium carbonate, titanium white, bengara, silicon carbide, boron nitride, and the like; beads formed by spheroidizing these inorganic fillers; surface modification of these inorganic fillers Products; single crystal fibers of these inorganic fillers; glass fibers and the like.

  When using the filler (D), in the composition (III-1), the ratio of the content of the filler (D) to the total content of all components other than the solvent (that is, the filler of the thermosetting resin film) The content of (D) is preferably 5 to 80% by mass.

  The composition (III-1) and the thermosetting resin film may contain a coupling agent (E). By using a coupling agent (E), the adhesiveness and adhesiveness with respect to the adherend of a thermosetting resin film can be improved. Moreover, water resistance improves the 1st protective film obtained by hardening | curing a thermosetting resin film by using a coupling agent (E), without impairing heat resistance.

  The coupling agent (E) is preferably a compound having a functional group capable of reacting with the functional group of the polymer component (A), the thermosetting component (B), etc., and is preferably a silane coupling agent. More preferred.

  When the coupling agent (E) is used, in the composition (III-1) and the thermosetting resin film, the content of the coupling agent (E) is the polymer component (A) and the thermosetting component (B). It is preferable that it is 0.03-20 mass parts with respect to 100 mass parts of total content.

  When a polymer component (A) having a functional group such as a vinyl group, (meth) acryloyl group, amino group, hydroxyl group, carboxy group, or isocyanate group that can be bonded to another compound is used, the composition (III- 1) and the thermosetting resin film may contain a crosslinking agent (F) for bonding the functional group with another compound to crosslink. By crosslinking using the crosslinking agent (F), the initial adhesive force and cohesive force of the thermosetting resin film can be adjusted.

  In the present specification, “(meth) acryloyl group” is a concept including both “acryloyl group” and “methacryloyl group”. The same applies to terms similar to the (meth) acryloyl group. For example, “(meth) acrylic acid” is a concept including both “acrylic acid” and “methacrylic acid”. “Acrylate” is a concept encompassing both “acrylate” and “methacrylate”.

  Examples of the crosslinking agent (F) include organic polyvalent isocyanate compounds, organic polyvalent imine compounds, metal chelate crosslinking agents (crosslinking agents having a metal chelate structure), aziridine crosslinking agents (crosslinking agents having an aziridinyl group), and the like. Is mentioned.

  When using a crosslinking agent (F), in composition (III-1), content of a crosslinking agent (F) is 0.01-20 mass with respect to 100 mass parts of content of a polymer component (A). Part.

  The composition (III-1) may contain an energy ray curable resin (G). Since the thermosetting resin film contains the energy ray curable resin (G), the properties can be changed by irradiation with energy rays.

The energy beam curable resin (G) is obtained by polymerizing (curing) an energy beam curable compound.
Examples of the energy ray curable compound include compounds having at least one polymerizable double bond in the molecule, and acrylate compounds having a (meth) acryloyl group are preferable.

  When using energy-beam curable resin (G), in composition (III-1), it is preferable that content of energy-beam curable resin (G) is 1-95 mass%.

When composition (III-1) contains energy beam curable resin (G), in order to advance the polymerization reaction of energy beam curable resin (G) efficiently, it contains a photopolymerization initiator (H). It may be.
Examples of the photopolymerization initiator (H) in the composition (III-1) include benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin benzoic acid, benzoin methyl benzoate, and benzoin dimethyl ketal. Benzoin compounds such as acetophenone, acetophenone compounds such as acetophenone, 2-hydroxy-2-methyl-1-phenyl-propan-1-one, 2,2-dimethoxy-1,2-diphenylethane-1-one; bis (2, Acylphosphine oxide compounds such as 4,6-trimethylbenzoyl) phenylphosphine oxide and 2,4,6-trimethylbenzoyldiphenylphosphine oxide; benzylphenyl sulfide, tetramethylthiuram Sulfide compounds such as nosulfides; α-ketol compounds such as 1-hydroxycyclohexyl phenyl ketone; azo compounds such as azobisisobutyronitrile; titanocene compounds such as titanocene; thioxanthone compounds such as thioxanthone; peroxide compounds; Diketone compound; benzyl; dibenzyl; benzophenone; 2,4-diethylthioxanthone; 1,2-diphenylmethane; 2-hydroxy-2-methyl-1- [4- (1-methylvinyl) phenyl] propanone; 2-chloroanthraquinone, etc. Is mentioned.
As the photopolymerization initiator, for example, a quinone compound such as 1-chloroanthraquinone; a photosensitizer such as amine can be used.

  When using a photoinitiator (H), in composition (III-1), content of a photoinitiator (H) is 100 mass parts of energy beam curable resin (G) content, It is preferable that it is 0.1-20 mass parts.

The composition (III-1) and the thermosetting resin film may contain a general-purpose additive (I) within a range not impairing the effects of the present invention.
The general-purpose additive (I) may be a known one and can be arbitrarily selected according to the purpose, and is not particularly limited. Preferred general-purpose additives (I) include, for example, plasticizers, antistatic agents, antioxidants, colorants (dyes and pigments), gettering agents and the like.

  Content of general purpose additive (I) of a composition (III-1) and a thermosetting resin film is not specifically limited, What is necessary is just to select suitably according to the objective.

The composition (III-1) preferably further contains a solvent. The composition (III-1) containing the solvent has good handleability.
The solvent is not particularly limited, but preferred examples include hydrocarbons such as toluene and xylene; alcohols such as methanol, ethanol, 2-propanol, isobutyl alcohol (2-methylpropan-1-ol), and 1-butanol. An ester such as ethyl acetate; a ketone such as acetone or methyl ethyl ketone; an ether such as tetrahydrofuran; an amide (a compound having an amide bond) such as dimethylformamide or N-methylpyrrolidone;
Among these, it is preferable that the said solvent is methyl ethyl ketone etc. from the point which can mix the containing component in a composition (III-1) more uniformly.

  Polymer component (A), thermosetting component (B) (epoxy resin (B1) and thermosetting agent (B2)), curing accelerator (C), filler (D) contained in composition (III-1) ), Coupling agent (E), cross-linking agent (F), energy beam curable resin (G), photopolymerization initiator (H), general-purpose additive (I), and solvent may each be one kind, Two or more kinds may be used, and when there are two or more kinds, a combination and a ratio thereof can be arbitrarily selected.

<Energy ray curable resin film>
The energy beam curable resin film contains an energy beam curable component (a).
The energy ray curable component (a) is preferably uncured, preferably tacky, and more preferably uncured and tacky.

[Composition for forming an energy ray curable resin film]
The energy ray curable resin film can be formed using an energy ray curable resin film forming composition containing the constituent material.
As the composition for forming an energy beam curable resin film, for example, the composition for forming an energy beam curable resin film (IV-1) containing the energy beam curable component (a) (in this specification, simply And the like (may be abbreviated as “composition (IV-1)”).

The energy ray curable component (a) is a component that is cured by irradiation with energy rays, and is also a component for imparting film forming property, flexibility, and the like to the energy ray curable resin film.
Examples of the energy beam curable component (a) include a polymer (a1) having an energy beam curable group and a weight average molecular weight of 80000 to 2000000, and an energy beam curable group having a molecular weight of 100 to 80000. A compound (a2) is mentioned. The polymer (a1) may be crosslinked at least partly with a crosslinking agent or may not be crosslinked.
In the present specification, the weight average molecular weight is a polystyrene conversion value measured by a gel permeation chromatography (GPC) method unless otherwise specified.

  Examples of the polymer (a1) having an energy ray curable group and having a weight average molecular weight of 80,000 to 2,000,000 include an acrylic polymer (a11) having a functional group capable of reacting with a group of another compound, An acrylic resin (a1-1) formed by polymerizing a group that reacts with a functional group and an energy ray curable compound (a12) having an energy ray curable group such as an energy ray curable double bond. .

Examples of the functional group capable of reacting with a group possessed by another compound include a hydroxyl group, a carboxy group, an amino group, and a substituted amino group (one or two hydrogen atoms of the amino group are substituted with a group other than a hydrogen atom). Group), an epoxy group, and the like. However, the functional group is preferably a group other than a carboxy group from the viewpoint of preventing corrosion of a circuit such as a semiconductor wafer or a semiconductor chip.
Among these, the functional group is preferably a hydroxyl group.

  The energy ray curable compound (a12) is one or two selected from the group consisting of an isocyanate group, an epoxy group and a carboxy group as a group capable of reacting with the functional group of the acrylic polymer (a11). Those having the above are preferred, and those having an isocyanate group as the group are more preferred. For example, when the energy beam curable compound (a12) has an isocyanate group as the group, the isocyanate group easily reacts with the hydroxyl group of the acrylic polymer (a11) having a hydroxyl group as the functional group.

  The energy ray curable group having an energy ray curable group and having a molecular weight of 100 to 80,000 (a2) includes a group containing an energy ray curable double bond, and (meth) is preferable. An acryloyl group, a vinyl group, etc. are mentioned.

When the composition (IV-1) and the energy beam curable resin film contain the compound (a2) as the energy beam curable component (a), the polymer (b) further does not have an energy beam curable group. Is also preferably contained.
The polymer (b) may be crosslinked at least partially by a crosslinking agent, or may not be crosslinked.

Examples of the polymer (b) having no energy ray curable group include acrylic polymers, phenoxy resins, urethane resins, polyesters, rubber resins, and acrylic urethane resins.
Among these, the polymer (b) is preferably an acrylic polymer (hereinafter sometimes abbreviated as “acrylic polymer (b-1)”).

  Examples of the composition (IV-1) include those containing any one or both of the polymer (a1) and the compound (a2). And when a composition (IV-1) contains the said compound (a2), it is preferable to also contain the polymer (b) which does not have an energy-beam curable group further, and in this case, further said (a1) It is also preferable to contain. Further, the composition (IV-1) does not contain the compound (a2), and may contain both the polymer (a1) and the polymer (b) having no energy ray curable group. .

  When the composition (IV-1) contains the polymer (a1), the compound (a2) and the polymer (b) having no energy ray-curable group, the composition (IV-1) The content of the compound (a2) is preferably 10 to 400 parts by mass with respect to 100 parts by mass of the total content of the polymer (a1) and the polymer (b) having no energy ray curable group. .

  In the composition (IV-1), the ratio of the total content of the energy beam curable component (a) and the polymer (b) having no energy beam curable group to the total content of components other than the solvent (that is, The total content of the energy beam curable component (a) and the polymer (b) having no energy beam curable group in the energy beam curable resin film is preferably 5 to 90% by mass.

  The composition (IV-1) comprises a thermosetting component, a photopolymerization initiator, a filler, a coupling agent, a crosslinking agent, a general-purpose additive, and a solvent, depending on the purpose, in addition to the energy ray curable component. You may contain 1 type, or 2 or more types selected from the group. For example, by using the composition (IV-1) containing the energy ray curable component and the thermosetting component, the formed energy ray curable resin film has improved adhesion to the adherend by heating. The strength of the first protective film formed from this energy ray curable resin film is also improved.

  The thermosetting component, photopolymerization initiator, filler, coupling agent, crosslinking agent, general-purpose additive and solvent in the composition (IV-1) are each thermosetting in the composition (III-1). The same thing as a component (B), a photoinitiator (H), a filler (D), a coupling agent (E), a crosslinking agent (F), a general purpose additive (I), and a solvent is mentioned.

In the composition (IV-1), the thermosetting component, the photopolymerization initiator, the filler, the coupling agent, the cross-linking agent, the general-purpose additive, and the solvent may each be used alone, Two or more kinds may be used in combination, and when two or more kinds are used in combination, their combination and ratio can be arbitrarily selected.
The contents of the thermosetting component, photopolymerization initiator, filler, coupling agent, cross-linking agent, general-purpose additive and solvent in the composition (IV-1) may be appropriately adjusted according to the purpose. It is not limited.

<Method for producing curable resin film-forming composition>
The said curable resin film formation composition is obtained by mix | blending each component for comprising this.
The order of addition at the time of blending each component is not particularly limited, and two or more components may be added simultaneously.
When a solvent is used, it may be used by mixing the solvent with any compounding component other than the solvent and diluting the compounding component in advance, or by diluting any compounding component other than the solvent in advance. You may use it by mixing a solvent with these compounding ingredients, without leaving.
The method of mixing each component at the time of compounding is not particularly limited, from a known method such as a method of mixing by rotating a stirrer or a stirring blade; a method of mixing using a mixer; a method of mixing by applying ultrasonic waves What is necessary is just to select suitably.
The temperature and time at the time of addition and mixing of each component are not particularly limited as long as each compounding component does not deteriorate, and may be adjusted as appropriate, but the temperature is preferably 15 to 30 ° C.

The semiconductor wafer processing sheet 7 can be manufactured by a known method.
For example, the curable resin film-forming composition such as the composition (III-1) or the composition (IV-1) is applied onto the release-treated surface of the release film 94 and dried as necessary. The exposed surface (the surface on the side not provided with the release film 94) of the obtained coating layer is bonded to the release treatment surface of another release film 94, whereby the semiconductor wafer processing sheet 7 is obtained.

In addition, each composition such as the curable resin film-forming composition described in the present specification is not limited to the type thereof, for example, an air knife coater, a blade coater, a bar coater, a gravure coater, a roll coater, a roll The coating can be carried out on the target site by a known method using various coaters such as a knife coater, curtain coater, die coater, knife coater, screen coater, Meyer bar coater, kiss coater and the like.
Moreover, it is preferable to dry each composition, such as the said composition for curable resin film formation, on the conditions for 10 second-5 minutes at 70-130 degreeC after the coating, for example according to the kind. .

◎ Semiconductor wafer processing sheet (S3)
The second surface of the semiconductor wafer used in the present invention may be exposed. On the exposed second surface of the semiconductor chip, a resin film containing an organic material may be formed as a second protective film, and may be taken into the semiconductor device as a semiconductor chip with the second protective film. The second protective film is used for preventing the occurrence of cracks in the semiconductor chip after the dicing process or packaging.

  In order to form such a 2nd protective film, the film for 2nd protective film formation comprised so that a 2nd protective film may be formed by hardening, for example is used. In the manufacturing method of the present invention, the semiconductor wafer processing sheet is further provided with such a second protective film forming film (referred to as “semiconductor wafer processing sheet (S3)” in this specification). May be used).

FIG. 3 is a cross-sectional view schematically showing an example of a semiconductor wafer processing sheet (S3).
The semiconductor wafer processing sheet 6 shown here includes a release film 94 on the second protective film forming composite sheet 2. And the 2nd protective film formation composite sheet 2 is equipped with the 2nd protective film formation film 22 on the 2nd support sheet 21, and is comprised. That is, the semiconductor wafer processing sheet 6 is configured by laminating the support sheet 21, the second protective film forming film 22, and the release film 94 in this order in the thickness direction.

The second protective film-forming composite sheet 2 (that is, the second support sheet 21 and the second protective film-forming film 22) may be the same as the known second protective film-forming composite sheet.
The release film 94 may also be a known one.

The second protective film forming film 22 can form a second protective film by curing.
The second protective film forming film 22 may be either a thermosetting second protective film forming film or an energy ray curable second protective film forming film.
The second protective film-forming film 22 can be formed using a second protective film-forming composition containing the constituent materials.

The second support sheet 21 may be, for example, a sheet that can be used as a dicing sheet (not shown), or may be a release film similar to the release film 94 described above.
As the 2nd support sheet 21 which is a dicing sheet, the thing by which the 2nd adhesive layer is provided on the 2nd substrate is mentioned, for example, In this case, the film 22 for 2nd protective film formation is the 2nd. It is provided on the second pressure-sensitive adhesive layer side of the support sheet 21.

  The second base material is the same as the first base material 11 described above.

A 2nd adhesive layer is a sheet form or a film form, and contains an adhesive.
Examples of the adhesive include adhesive resins such as acrylic resins, urethane resins, rubber resins, silicone resins, epoxy resins, polyvinyl ethers, and polycarbonates, and acrylic resins are preferable.

  In the present invention, the “adhesive resin” is a concept including both an adhesive resin and an adhesive resin. For example, the resin itself has an adhesive property, Also included are resins that exhibit tackiness when used in combination with other components such as additives, and resins that exhibit adhesiveness due to the presence of a trigger such as heat or water.

The second pressure-sensitive adhesive layer may be an energy-beam curable pressure-sensitive adhesive layer formed using an energy beam-curable pressure-sensitive adhesive, or a non-energy beam formed using a non-energy-ray-curable pressure-sensitive adhesive. It may be a line curable pressure-sensitive adhesive layer. The energy ray-curable second pressure-sensitive adhesive layer can easily adjust the physical properties before and after curing.
A 2nd adhesive layer can be formed using the 2nd adhesive composition containing the constituent material.

  Each of the second base material and the second pressure-sensitive adhesive layer may be only one layer (single layer), or may be two or more layers. In the case of a plurality of layers, these layers are the same or different from each other. The combination of these multiple layers is not particularly limited.

  Each of the second support sheet 21 and the second protective film-forming film 22 may be only one layer (single layer), or may be two or more layers. In the case of a plurality of layers, these layers are They may be the same or different, and the combination of these multiple layers is not particularly limited.

The thickness of the second support sheet 21 is preferably 10 to 500 μm.
Here, the “thickness of the second support sheet” means the thickness of the entire second support sheet. For example, the thickness of the second support sheet composed of a plurality of layers means all of the second support sheet. Means the total thickness of the layers.

The thickness of the second protective film-forming film 22 is preferably 1 to 50 μm.
Here, the “thickness of the second protective film forming film” means the thickness of the entire second protective film forming film, for example, the thickness of the second protective film forming film composed of a plurality of layers. Means the total thickness of all layers constituting the second protective film-forming film.

The semiconductor wafer processing sheet 6 can be manufactured by a known method.
For example, the composition for forming the second protective film is applied onto the second support sheet 21, and dried as necessary, or the composition is applied onto the release treatment surface of the release film, A film for forming a second protective film is formed on the second support sheet 21 by drying as necessary and bonding the obtained coating layer onto the second support sheet 21. Next, the exposed surface of the second protective film forming film (the surface on the side not provided with the second support sheet 21) is bonded to the release treatment surface of the release film 94, whereby the semiconductor wafer processing sheet 6 is obtained. .
In addition, for example, the second protective film-forming composition is coated on the release film 94 by applying the second protective film-forming composition onto the release-treated surface of the release film 94 and drying it as necessary. The semiconductor wafer processing sheet 6 can also be obtained by forming and then bonding the exposed surface of the second protective film forming film (the surface not provided with the release film 94) to the second support sheet 21.

  Hereinafter, the manufacturing method of the workpiece | work of this invention is demonstrated in detail, referring drawings. FIG. 4 is a cross-sectional view for schematically explaining one embodiment of the method for manufacturing a workpiece of the present invention. Here, a manufacturing method using the semiconductor wafer processing sheet shown in FIGS. 1 to 3 will be described.

<Process (P1)>
In the production method of the present invention, first, the step (P1) is performed.
In the step (P1), as shown in FIG. 4A, the back grind tape 1 is attached to the first surface 50a having the bumps 51 of the semiconductor wafer 50 ′.
A plurality of bumps 51 are provided on the first surface 50 a of the semiconductor wafer 50 ′ shown here. The bump 51 has a shape in which a part of a sphere is cut out by a flat surface, and a flat surface corresponding to the cut and exposed portion is in contact with the first surface 50a of the semiconductor wafer 50 ′.

The semiconductor wafer to which the present invention is applied is not limited to the one shown in FIG. 4, and a part of the configuration is changed, deleted or added within a range not impairing the effects of the present invention. Also good. For example, FIG. 4 shows a substantially spherical shape as described above (a shape in which a part of the sphere is cut off by a flat surface) as a bump. In FIG. 4, the shape stretched in the direction orthogonal to the first surface 50a of the semiconductor wafer 50 ′, that is, the shape of a spheroid that is a substantially spheroid (the major axis of the spheroid that is a spheroid). A shape in which a portion including one end in a direction is cut off by a plane) or a shape obtained by crushing a substantially spherical shape as described above in the height direction, that is, a shape of a spheroid that is substantially oblate ( A bump having a shape in which a portion including one end in the minor axis direction of a spheroid that is a flat sphere is cut out by a flat surface is also exemplified as a bump having a preferable shape.
The shape of the bump described so far is merely an example of a preferable one provided in the semiconductor wafer to be used in the present invention, and the shape of the bump is not limited to these in the present invention.

  The back grind tape 1 is obtained by removing the release film 94 from the semiconductor wafer processing sheet 8 described above.

  The back grinding tape 1 can be attached to the first surface 50a by a known method.

  Since the semiconductor wafer processing sheet 8 is thin, even if it is wound and stored in a roll shape, it is between the release film 94 and the back grind tape 1 (the first adhesive layer 12) adjacent thereto. Generation of delamination (tunneling, streaks) is suppressed. As a result, the surface of the back grind tape 1 during use is also prevented from being an uneven surface, and the occurrence of unevenness is also suppressed on the ground surface after grinding the second surface 50b 'of the semiconductor wafer 50'. Such an effect of suppressing delamination can be achieved by winding the semiconductor wafer processing sheet 8 in a roll shape with the release film 94 facing either the inner side or the outer side (the semiconductor wafer processing sheet 8 is rolled). Can be obtained in any direction), and can be obtained even when refrigerated.

<Process (P2)>
In the production method of the present invention, the step (P2) is performed after the step (P1).
In the step (P2), as shown in FIG. 4B, the second surface 50b ′ of the semiconductor wafer 50 ′ having the back grind tape 1 attached to the first surface 50a opposite to the first surface 50a. Grind. In this specification and the drawings, the semiconductor wafer before grinding is denoted by reference numeral 50 ', and the semiconductor wafer after grinding is denoted by reference numeral 50, and these semiconductor wafers are shown separately. Similarly, the second surface of the semiconductor wafer before grinding is denoted by reference numeral 50b ', and the second surface of the semiconductor wafer after grinding is denoted by reference numeral 50b. Yes.

  The second surface 50b 'of the semiconductor wafer before grinding can be ground by a known method such as a method using a grinder.

  In step (P2), the back grind tape 1 having characteristics suitable for use during grinding of the second surface 50b 'is directly attached to the first surface 50a of the semiconductor wafer 50'. Therefore, unlike the case where the curable resin film having high flexibility is directly attached to the first surface 50a as in the conventional manufacturing method, heat is generated when the second surface 50b ′ is ground. Thus, even if the temperature of the back grind tape 1 rises, the movement of the semiconductor wafer 50 ′ during grinding is suppressed. As a result, the roughness of the ground surface (that is, the second surface 50b of the semiconductor wafer 50 after grinding) is suppressed, and the occurrence of dimples and cracks in the semiconductor wafer 50 is suppressed.

  In the step (P2), as described above, the back grind tape 1 is directly attached to the first surface 50a of the semiconductor wafer 50 '. Therefore, unlike the case where the curable resin film having high flexibility is directly attached to the first surface 50a as in the conventional manufacturing method, heat is generated when the second surface 50b ′ is ground. Even if the temperature of the back grind tape 1 rises, the first adhesive layer 12 or the like in the back grind tape 1 sticks out at the portion where the position coincides with the ends of the semiconductor wafer 50 and the semiconductor wafer 50 ′. Does not occur. In the conventional manufacturing method, the highly flexible curable resin film directly attached to the first surface 50a causes protrusion of the curable resin film due to dripping at the portion due to an increase in temperature.

<Process (P5)>
The manufacturing method of the present invention further includes a step of attaching a second protective film-forming film to the second surface of the ground semiconductor wafer between the step (P2) and a step (P3) described later. It is preferable to have (P5).
That is, in the manufacturing method of the present invention, after the step (P2) and before the step (P3) described later, the second surface 50b of the ground semiconductor wafer 50 is further processed as shown in FIG. Moreover, it is preferable to perform the process (P5) of sticking the film 22 for 2nd protective film formation.
Here, a case where the second protective film forming film 22 is attached to the semiconductor wafer 50 in the state of the second protective film forming composite sheet 2 together with the second support sheet 21 is shown.

The second protective film forming film 22 is obtained by removing the release film 94 from the semiconductor wafer processing sheet 6 described above.
The second protective film forming film 22 can be attached to the second surface 50b by a known method.

  Since the semiconductor wafer processing sheet 6 is thin, the release film 94 and the second protection adjacent to the release film 94 are stored even when the sheet is wound up and stored in the same manner as the semiconductor wafer processing sheet 8 described above. Generation of delamination (tunneling, streaks) is suppressed between the film-forming composite sheet 2 (second protective film-forming film 22) and the like. As a result, the occurrence of defects caused by such delamination is also suppressed. Such an effect of suppressing delamination can be achieved by winding the semiconductor wafer processing sheet 6 in a roll shape with the release film 94 facing either the inner side or the outer side (the semiconductor wafer processing sheet 6 is rolled). Can be obtained in any direction), and can be obtained even when refrigerated.

  In the production method of the present invention, the step (P5) is an optional step. However, for example, when the second protective film is formed on the back surface of the semiconductor chip corresponding to the second surface 50b of the semiconductor wafer 50, the step (P3) described later is performed by performing the step (P5) in advance. It can be done easily. For example, the semiconductor wafer 50 is stabilized by the second protective film forming film 22 by performing the step (P5) and pasting the second protective film forming film 22 to the second surface 50b of the semiconductor wafer 50. Therefore, the back grind tape 1 can be more easily peeled from the first surface 50a of the semiconductor wafer 50 in the step (P3). Further, when the composite sheet 2 for forming the second protective film is the one in which the second support sheet 21 is a dicing sheet, the semiconductor is immediately performed after the manufacturing method of the present invention by performing the step (P5). The wafer 50 can be diced. Thus, by performing the step (P5), the target semiconductor device can be efficiently manufactured.

<Process (P3)>
In the production method of the present invention, the step (P3) is performed after the step (P2).
When the step (P5) is performed, the step (P3) may be performed after the step (P5).
In the step (P3), as shown in FIG. 4 (d), a back grind tape is formed from the first surface 50a of the semiconductor wafer 50 whose second surface 50b ′ is ground (having the second surface 50b after grinding). 1 is peeled off.
The back grinding tape 1 can be peeled off from the first surface 50a by a known method.

<Process (P4)>
In the manufacturing method of this invention, the said process (P4) is performed after a process (P3).
In the step (P4), as shown in FIG. 4E, the curable resin film 13 is attached to the first surface 50a side of the semiconductor wafer 50 from which the back grind tape 1 has been peeled off.

The curable resin film 13 can be attached to the semiconductor wafer 50 by removing one release film 94 from the semiconductor wafer processing sheet 7 described above. Here, the curable resin film 13 in a state where the release film 94 attached to both surfaces is removed is shown.
The curable resin film 13 can be stuck on the first surface 50a side by a known method.

  Since the semiconductor wafer processing sheet 7 is thin, both the release films 94 and 94 are adjacent to each other even when the sheet 7 is wound up and stored in the same manner as the semiconductor wafer processing sheet 8 described above. Generation of delamination (tunneling, streaks) with the curable resin film (curable resin layer) 13 to be performed is suppressed. As a result, the occurrence of defects caused by such delamination is also suppressed. Such an effect of suppressing delamination can be achieved by winding the semiconductor wafer processing sheet 7 in a roll shape with either of the pair of release films 94 facing inward (or outward) (semiconductor wafer processing sheet 7). Can be obtained in any direction), and can be obtained even when refrigerated.

In the step (P4), the curable resin film 13 stuck is not in contact with the first surface 50a of the semiconductor wafer 50 as shown here unless the flexibility is sufficiently increased by heating or the like, and the bump 51 It is held in contact with the surface 51a.
Thus, a work 501 having a structure in which the semiconductor wafer 50 and the curable resin film 13 are laminated is obtained.

  The curable resin film 13 affixed to the first surface 50a side of the semiconductor wafer 50 increases in fluidity by heating, spreads between the bumps, and comes into close contact with the first surface 50a. In particular, the bumps 51 are embedded so as to cover the surface 51a in the vicinity of the first surface 50a. FIG. 5 shows the workpiece 501 ′ in such a state that the curable resin film 13 is in close contact with the first surface 50 a of the semiconductor wafer 50 and the surface 51 a of the bump 51.

  That is, in the manufacturing method of the present invention, when the curable resin film 13 is pasted on the first surface 50a side of the semiconductor wafer 50 in the step (P4), on the first surface 50a side of the semiconductor wafer 50, The curable resin film 13 is heated and applied while increasing its fluidity, or the curable resin film 13 is applied without heating to increase the fluidity, and then the curable resin film 13 is heated. By increasing the fluidity, the curable resin film 13 may be brought into close contact with the first surface 50 a of the semiconductor wafer 50 and the surface 51 a of the bump 51.

  In FIG. 5, the workpiece 501 ′ shows a state in which the top of the bump 51 is exposed through the curable resin film 13, which is a semiconductor chip (not shown) manufactured from the semiconductor wafer 50. This is a preferable state when considering flip-chip mounting. However, the top of the bump 51 only needs to be exposed when the semiconductor chip is flip-chip mounted. As shown here, the curable resin film 13 is in close contact with the first surface 50 a and the surface 51 a of the bump 51. The top of the bump 51 does not necessarily have to be exposed immediately after the step. As described above, when the tops of the bumps 51 are not initially exposed, the first protective film (not shown) is preferably cured by flip-chip mounting, preferably by curing the curable resin film 13, by another known method. ) May be exposed at any stage before forming.

Up to this point, the workpiece 501 and the workpiece 501 ′ have been described as having the curable resin film 13 uncured. However, in the present invention, a work in which the first protective film is formed by curing the curable resin film 13 may be used. FIG. 6 shows the workpiece 502 ′ in a state where the first protective film is thus formed. In FIG. 6, the 1st protective film formed by hardening | curing the curable resin film 13 is shown with code | symbol 13 '.
And when forming a 1st protective film and making it a workpiece | work, after heating the curable resin film 13 and making it closely_contact | adhere to the 1st surface 50a of the semiconductor wafer 50 and the surface 51a of the bump 51 as mentioned above, it is as it is. Subsequently, the heating of the curable resin film 13 may be continued, or the curable resin film 13 may be continuously irradiated with energy rays to form the first protective film 13 ′.

The curing conditions for forming the first protective film by curing the curable resin film 13 are not particularly limited as long as the first protective film has a degree of curing that can sufficiently exhibit its function. What is necessary is just to select suitably according to the kind of film 13. FIG.
For example, when the curable resin film 13 is thermosetting, the heating temperature during curing is preferably 100 to 200 ° C. And it is preferable that the heat time at the time of hardening is 0.5 to 5 hours.
On the other hand, when the curable resin film 13 is energy ray curable, the illuminance of the energy rays during curing is preferably 180 to 280 mW / cm ² . And it is preferable that the light quantity of the energy ray at the time of hardening is 450-1000 mJ / cm < ² >.

That is, in the manufacturing method of the present invention, after the curable resin film 13 is brought into close contact with the first surface 50a of the semiconductor wafer 50 and the surface 51a of the bump 51 in the step (P4), the curable resin film 13 is further added. The first protective film 13 ′ may be formed by curing.
In the manufacturing method of the present invention, in the step (P4), the curable resin film 13 is applied to the first surface 50a side of the semiconductor wafer 50 while being heated to increase its fluidity or flow. After affixing the curable resin film 13 without performing heating to increase the property, the curable resin film 13 is heated to increase its fluidity, whereby the curable resin film 13 is attached to the first surface of the semiconductor wafer 50. After closely adhering to 50a and the surface 51a of the bump 51, the heating of the curable resin film 13 is continued as it is, or the curable resin film 13 is continuously irradiated with energy rays as it is, The first protective film 13 ′ may be formed by curing.

  Thus, in the step (P4), after the curable resin film 13 is brought into close contact with the first surface 50a of the semiconductor wafer 50 and the surface 51a of the bump 51, the curable resin film 13 is continuously cured as it is, The first protective film 13 ′ may be formed, but after the curable resin film 13 is brought into close contact with the first surface 50a and the surface 51a, the curable resin film 13 is cured after being cooled once. The first protective film 13 ′ may be formed.

  Up to this point, when the second protective film forming film 22 on the semiconductor wafer 50 is cured to form the second protective film (not shown), the curable resin film 13 is pasted on the semiconductor wafer 50. Explained. However, in the present invention, the curable resin film 13 may be applied to the semiconductor wafer 50 at a stage after the second protective film forming film 22 on the semiconductor wafer 50 is cured to form the second protective film. Good. FIG. 7 shows the work 503 in a state where the second protective film is formed as described above. In FIG. 7, the second protective film formed by curing the second protective film forming film 22 is indicated by reference numeral 22 ′.

  In the present specification, the second protective film-forming composite sheet after the second protective film-forming film is cured to form the second protective film is also a laminated structure of the second support sheet and the second protective film. As long as it has, it is called the 2nd protective film formation composite sheet.

  That is, when the manufacturing method of the present invention includes the step (P5), the step (P4) is performed by curing the second protective film forming film 22 attached to the second surface 50b of the semiconductor wafer 50. It may be performed after the second protective film 22 ′ is formed, or may be performed before the second protective film forming film 22 is cured.

  Further, as described above, after the second protective film forming film 22 stuck on the second surface 50b of the semiconductor wafer 50 is cured to form the second protective film 22 ′, the process (P4) is performed. Alternatively, a workpiece obtained by further curing the curable resin film 13 to form the first protective film may be used. FIG. 8 shows the workpiece 503 ′ in a state where the first protective film and the second protective film are formed as described above.

  That is, in the manufacturing method of the present invention, the second protective film 22 ′ is formed by curing the second protective film forming film 22 attached to the second surface 50b of the semiconductor wafer 50 in the step (P4). Then, after the curable resin film 13 is adhered to the first surface 50a of the semiconductor wafer 50 and the surface 51a of the bump 51, the curable resin film 13 is further cured to form a first protective film 13 ′. Also good. In this case, after forming the second protective film, the curable resin film 13 may be adhered to the semiconductor wafer 50 as described above, or the curable resin film 13 is adhered to the semiconductor wafer 50 as described above. Then, the second protective film may be formed. Then, the first protective film may be formed after forming the second protective film, or the second protective film may be formed after forming the first protective film.

For example, when the 2nd protective film formation film 22 is thermosetting, it is preferable that the heating temperature at the time of hardening is 100-200 degreeC. And it is preferable that the heat time at the time of hardening is 0.5 to 5 hours.
On the other hand, when the second protective film-forming film 22 is energy ray curable, the illuminance of the energy rays at the time of curing is preferably ⁴ to 280 mW / cm ² . And it is preferable that the light quantity of the energy ray at the time of hardening is 3-1000 mJ / cm < ² >.

<< Semiconductor Device Manufacturing Method >>
After obtaining the workpiece by the manufacturing method of the present invention, a semiconductor device can be manufactured by using the workpiece in the same manner as the conventional method.
For example, the semiconductor wafer provided with the first protective film and the second protective film described above is in a state in which a dicing sheet is pasted, diced, and the semiconductor wafer is divided together with the first protective film and the second protective film to obtain a semiconductor chip. It can be. Or, for example, a semiconductor in which either one or both of the curable resin film and the second protective film-forming film is not cured (one or both of the first protective film and the second protective film are not formed). The wafer is in a state in which a dicing sheet is pasted, diced, the semiconductor wafer is divided into semiconductor chips, and any of the above uncured films is cured to include a first protective film and a second protective film A semiconductor chip can be obtained.

Dicing of the semiconductor wafer can be performed by a known method and is not particularly limited.
For example, dicing of a semiconductor wafer includes a method using a blade (that is, blade dicing), a method performed by laser irradiation (that is, laser dicing), a method performed by spraying water containing an abrasive (that is, water dicing), and the like. This can be done by a method of cutting a semiconductor wafer. In addition, the dicing of the semiconductor wafer is performed by irradiating a laser beam so as to focus on a focal point set inside the semiconductor wafer, forming a modified layer inside the semiconductor wafer, and then applying a force to the semiconductor wafer. In addition, the method can be performed by a method of dividing the semiconductor wafer at the site where the modified layer is formed.

  Then, the semiconductor chip provided with the first protective film and the second protective film is picked up with the protective film provided (that is, as a semiconductor chip with a protective film). Next, the picked-up semiconductor chip is flip-chip connected to the circuit surface of the substrate to obtain a semiconductor package. Then, by using this semiconductor package, a target semiconductor device is obtained.

  Hereinafter, the present invention will be described in more detail with reference to specific examples. However, the present invention is not limited to the following examples.

In the following Examples and Comparative Examples, the components used for the production of the thermosetting resin film-forming composition are shown below.
Polymer component Polymer component (A) -1: butyl acrylate (hereinafter abbreviated as “BA”) (55 parts by mass), methyl acrylate (hereinafter abbreviated as “MA”) (10 parts by mass) Acrylic copolymer obtained by copolymerizing glycidyl methacrylate (hereinafter abbreviated as “GMA”) (20 parts by mass) and 2-hydroxyethyl acrylate (hereinafter abbreviated as “HEA”) (15 parts by mass). Resin (weight average molecular weight 800,000, glass transition temperature -28 ° C).
Epoxy resin Epoxy resin (B1) -1: Liquid bisphenol F-type epoxy resin (“YL983U” manufactured by Mitsubishi Chemical Corporation)
Epoxy resin (B1) -2: polyfunctional aromatic epoxy resin (“EPPN-502H” manufactured by Nippon Kayaku Co., Ltd.)
Epoxy resin (B1) -3: dicyclopentadiene type epoxy resin (“EPICLON HP-7200” manufactured by DIC)
Thermosetting agent Thermosetting agent (B2) -1: Novolac type phenolic resin ("BRG-556" manufactured by Showa Denko KK)
Curing accelerator Curing accelerator (C) -1: 2-phenyl-4,5-dihydroxymethylimidazole (“Curesol 2PHZ-PW” manufactured by Shikoku Kasei Kogyo Co., Ltd.)
Filler Filler (D) -1: Spherical silica modified with an epoxy group (“Admanano YA050C-MKK” manufactured by Admatechs)

Commercially available semiconductor wafer processing sheets used in the following examples and comparative examples are shown below.
-Semiconductor wafer processing sheet (S1) -1: Back grind tape provided with a release film ("E-8510HR" manufactured by Lintec Co., Ltd., thickness of back grind tape 510 μm)
(S3) -1: One surface of a second protective film-forming film (thickness 20 μm) is provided with a heavy release type release film (thickness 38 μm) as a second support sheet, and the other surface is a light release type Sheet with a release film (thickness 38 μm) (“LC2850” manufactured by Lintec Corporation)

  Each of the above-mentioned semiconductor wafer processing sheets (semiconductor wafer processing sheet (S1) -1 and semiconductor wafer processing sheet (S3) -1) is cut into a size of 330 mm in width and 30 m in length. The sample was wound into a roll at room temperature using an inch core. At this time, these sheets were wound up so that the release film faced the core side. These rolls were refrigerated for 1 day in a refrigerator at 5 ° C., then removed from the refrigerator to return the temperature to room temperature, and the semiconductor wafer processing sheet was fed out from the rolls and used in the following examples or comparative examples.

<Manufacture of semiconductor wafer processing sheet (S2)>
[Production Example 1]
(Manufacture of a composition for forming a thermosetting resin film)
Polymer component (A) -1, epoxy resin (B1) -1, epoxy resin (B1) -2, epoxy resin (B1) -3, thermosetting agent (B2) -1, curing accelerator (C) -1 , And filler (D) -1 are dissolved or dispersed in methyl ethyl ketone so that the ratio of these contents is the value shown in Table 1, and stirred at 23 ° C. to form a thermosetting resin film. As a composition, a composition (III-1) having a solid content concentration of 55% by mass was obtained. In addition, description with "-" of the column of the containing component in Table 1 means that the composition for thermosetting resin film formation does not contain the component.

(Manufacture of semiconductor wafer processing sheet (S2))
The thermosetting resin obtained above on the release-treated surface of a light-release type release film (“SP-PET 381031” manufactured by Lintec Corporation, thickness 38 μm) obtained by releasing one side of a polyethylene terephthalate film by silicone treatment A film-forming composition was applied and dried at 100 ° C. for 2 minutes to prepare a thermosetting resin film having a thickness of 40 μm.
Next, the release surface of the heavy release type release film ("SP-PET3811" manufactured by Lintec Co., Ltd., thickness 38 μm) is bonded to the exposed surface of the obtained thermosetting resin film, and the light release type release film is attached. A semiconductor wafer processing sheet (S2) -1 was obtained in which a thermosetting resin film and a heavy release type release film were laminated in this order in the thickness direction.

[Production Example 2]
Except that the contents of the epoxy resin (B1) -1, the epoxy resin (B1) -2, and the epoxy resin (B1) -3 in the composition for forming a thermosetting resin film are as shown in Table 1, In the same manner as in Production Example 1, a thermosetting resin film-forming composition and a semiconductor wafer processing sheet (S2) -2 were produced.

  The semiconductor wafer processing sheet (S2) obtained above is the same method as the above-described semiconductor wafer processing sheet (S1) -1 and semiconductor wafer processing sheet (S3) -1, and is used as a roll. After refrigerated storage, it was unwound from a roll and used in the following examples. In addition, these sheets were wound up in a roll shape so that a light release type release film faces the winding core side.

<Manufacture of semiconductor wafer processing sheet (SR) for comparison>
[Production Example 3]
The release film was removed from the semiconductor wafer processing sheet (S1) -1 to produce an exposed surface (adhesive surface) of the back grind tape. Further, the light release type release film was removed from the semiconductor wafer processing sheet (S2) -1 obtained in Production Example 1 to give an exposed surface of the curable resin film (curable resin layer). Then, by bonding these exposed surfaces together, a back grind tape, a thermosetting resin film, and a release film (heavy release type) are laminated in this order in the thickness direction, for comparison semiconductor wafer processing Sheet (SR) -1 was obtained.

[Production Example 4]
The release film was removed from the semiconductor wafer processing sheet (S1) -1 to produce an exposed surface (adhesive surface) of the back grind tape. Further, the light release type release film was removed from the semiconductor wafer processing sheet (S2) -2 obtained in Production Example 2 to produce an exposed surface of the curable resin film (curable resin layer). Then, by bonding these exposed surfaces together, a back grind tape, a thermosetting resin film, and a release film (heavy release type) are laminated in this order in the thickness direction, for comparison semiconductor wafer processing Sheet (SR) -2 was obtained.

  The comparative semiconductor wafer processing sheet (SR) obtained above is the same as that of the above-described semiconductor wafer processing sheet (S1) -1 and semiconductor wafer processing sheet (S3) -1. After refrigerated storage as a roll, it was unwound from the roll and used in the following comparative examples. In addition, these sheets were wound up in roll shape so that a peeling film might face a winding core side.

<Manufacture of workpieces>
[Example 1]
As a semiconductor wafer, bumps having a shape similar to that shown in FIG. 4 and a height of 250 μm are formed on the first surface of an 8-inch silicon wafer in which a large number of 10 mm long × 10 mm wide chips are arranged at a pitch of 500 μm. Using the wafer with solder bumps (thickness: 720 μm), the following steps were performed.

That is, first, the release film is removed from the semiconductor wafer processing sheet (S1) -1, and the exposed surface (adhesive surface) of the back grind tape generated thereby is attached to the first surface of the semiconductor wafer (step (P1)). ).
Next, the second surface of the semiconductor wafer was ground using a grinder (“Grinder DGP8760” manufactured by Disco Corporation) until the thickness of the semiconductor wafer reached 250 μm (step (P2)).
Next, the light release type release film is removed from the semiconductor wafer processing sheet (S3) -1, and the exposed surface of the second protective film forming film generated thereby is the second of the semiconductor wafer whose second surface is ground. It stuck on the surface (process (P5)).
Next, the back grind tape was peeled from the first surface of the semiconductor wafer to which the second protective film-forming film was attached (step (P3)).
Next, the light release type release film was removed from the semiconductor wafer processing sheet (S2) -1 obtained in Production Example 1, and the exposed surface of the resulting curable resin film was peeled off from the back grind tape. Affixed to the first surface side of the wafer (step (P4)).
As described above, as a workpiece, a semiconductor wafer with a film having a second protective film forming film on the ground second surface of the semiconductor wafer and a curable resin film on the first surface side was obtained.

<Evaluation of manufacturing suitability of workpieces>
(Suitability for roll storage of semiconductor wafer processing sheets)
As described above, the temperature was returned to room temperature after refrigerated storage, and the semiconductor wafer processing sheets (S1) -1, (S2) -1 and (S3) -1 immediately after being unwound from the roll were visually observed. And the roll storage suitability of the sheet | seat for semiconductor wafer processing was evaluated according to the following reference | standard from a viewpoint of the presence or absence of delamination (tunneling, stripe) between a peeling film and the layer adjacent to this. The results are shown in Table 2.
In Table 2, when the evaluation result is “x”, the semiconductor wafer processing sheet with delamination is shown in parentheses.
○: There is no delamination in all stored semiconductor wafer processing sheets.
X: There is delamination in any one or more stored semiconductor wafer processing sheets.

(Adequacy to suppress the occurrence of dimples and cracks)
During the production of the semiconductor wafer with a film described above, the second surface after grinding of the semiconductor wafer was visually observed immediately after the end of the step (P2). Then, from the viewpoint of the presence or absence of the occurrence of dimples and cracks in the portion corresponding to the bumps on the second surface, the suitability for suppressing the occurrence of dimples and cracks in the semiconductor wafer was evaluated according to the following criteria. The results are shown in Table 2.
○: There are no dimples and cracks.
X: Dimples or cracks are present.

(Applicability to suppress the protrusion of curable resin film)
During the manufacture of the semiconductor wafer with a film described above, immediately after the end of the step (P2), the semiconductor wafer does not include a curable resin film. Therefore, this item is not evaluated, and the evaluation result column in Table 2 includes "-" Was written.

<Evaluation of workpiece manufacturing and workpiece manufacturing aptitude>
[Example 2]
In the step (P4), the semiconductor wafer with film is the same as in Example 1 except that the semiconductor wafer processing sheet (S2) -2 is used instead of the semiconductor wafer processing sheet (S2) -1. And the suitability for production was evaluated. The results are shown in Table 2.

<Manufacture of workpieces>
[Comparative Example 1]
Using the same semiconductor wafer as used in Example 1, the following steps were performed.
That is, first, the release film was removed from the semiconductor wafer processing sheet (SR) -1, and the exposed surface of the resulting curable resin film (curable resin layer) was attached to the first surface of the semiconductor wafer.
Next, the second surface of the semiconductor wafer was ground using a grinder (“Grinder DGP8760” manufactured by Disco Corporation) until the thickness of the semiconductor wafer reached 250 μm.
Subsequently, only the back grind tape was peeled off from the first surface side of the semiconductor wafer, and the curable resin film was stuck on the first surface.
Next, by heating the curable resin film on the first surface, the film adheres to the circuit surface on the bump forming surface and covers the surface of the bump, particularly the surface in the vicinity of the circuit surface. The film was then cured by heating to form a first protective film.
Next, the light release type release film is removed from the semiconductor wafer processing sheet (S3) -1, and the exposed surface of the second protective film forming film generated thereby is formed on the semiconductor wafer after the first protective film is formed. Affixed to the second side.
As described above, as a workpiece, a semiconductor wafer with a film having a second protective film forming film on the ground second surface of the semiconductor wafer and a first protective film on the first surface was obtained.

<Evaluation of manufacturing suitability of workpieces>
(Suitability for roll storage of semiconductor wafer processing sheets)
As described above, the temperature was returned to room temperature after refrigerated storage, and the semiconductor wafer processing sheets (SR) -1 and (S3) -1 immediately after being fed out from the roll were visually observed. The roll storage suitability of these sheets was evaluated by the same method as in Example 1. The results are shown in Table 2.

(Adequacy to suppress the occurrence of dimples and cracks)
During the production of the above-described semiconductor wafer with a film, the second surface after grinding of the semiconductor wafer was visually observed immediately after finishing the grinding of the second surface of the semiconductor wafer. Then, the suitability for suppressing the occurrence of dimples and cracks in the semiconductor wafer was evaluated by the same method as in Example 1. The results are shown in Table 2.

(Applicability to suppress the protrusion of curable resin film)
During the manufacture of the semiconductor wafer with a film described above, a portion near the end of the semiconductor wafer was visually observed immediately after finishing the grinding of the second surface of the semiconductor wafer. And from the viewpoint of the presence or absence of the protrusion of the curable resin film in the portion where the position coincides with the end portion, the suitability for suppressing the protrusion of the curable resin film was evaluated according to the following criteria. The results are shown in Table 2.
○: No protrusion of the curable resin film.
X: The curable resin film protrudes.

<Evaluation of workpiece manufacturing and workpiece manufacturing aptitude>
[Comparative Example 2]
A semiconductor wafer with a film is manufactured in the same manner as in Comparative Example 1, except that the semiconductor wafer processing sheet (SR) -2 is used instead of the semiconductor wafer processing sheet (SR) -1, and the manufacturing is performed. Suitability was evaluated. The results are shown in Table 2.

As is clear from the above results, in Examples 1 and 2, since the thicknesses of the semiconductor wafer processing sheets (S1) to (S3) were all thin, the roll storage suitability of these sheets was good.
In Examples 1 and 2, the semiconductor wafer processing sheet (S1) is used, and a back grind tape suitable for use when grinding the second surface of the semiconductor wafer is directly attached to the first surface of the semiconductor wafer. In addition, since the second surface was ground, the dimple and crack generation suppression suitability was also good.
On the other hand, in Examples 1-2, the curable resin film does not exist on the first surface when the second surface of the semiconductor wafer is ground. Accordingly, in the production methods of Examples 1 and 2, the curable resin film cannot be protruded.

On the other hand, in Comparative Examples 1 and 2, a curable resin film that is not suitable for use in grinding the second surface of the semiconductor wafer using the semiconductor wafer processing sheet (SR) is used. Since the second surface was ground by being directly attached to the surface, the dimple and crack generation suitability was inferior.
Further, in Comparative Example 1, since the semiconductor wafer processing sheet (SR) was thick, the roll storage suitability of this sheet was inferior. On the other hand, in Comparative Example 2, although the thickness of the semiconductor wafer processing sheet (SR) is thick, since the flexibility of the curable resin film is high, delamination between the curable resin film and the release film is suppressed. Thus, the roll storage suitability of this sheet was good.
However, in Comparative Example 2, since the flexibility of the curable resin film was high in this way, the protrusion suppression suitability of the curable resin film was inferior. On the other hand, in Comparative Example 1, the flexibility of the curable resin film was good because the flexibility of the curable resin film was low.
The semiconductor wafer processing sheet (S3) in Comparative Examples 1-2 is the same as the semiconductor wafer processing sheet (S3) in Examples 1-2, and this sheet is the same as in Examples 1-2. The roll storage suitability was good.

  INDUSTRIAL APPLICABILITY The present invention can be used for manufacturing a semiconductor chip or the like having bumps in connection pad portions used in a flip chip mounting method.

  DESCRIPTION OF SYMBOLS 1 ... Back grind tape, 11 ... 1st base material, 12 ... 1st adhesive layer, 13 ... Curable resin film, 2 ... Composite sheet for 2nd protective film formation, 21 ..... 2nd support sheet, 22 ... 2nd film for protective film formation, 50, 50 '... Semiconductor wafer, 50a ... 1st surface of a semiconductor wafer, 50b, 50b' ... Semiconductor Second surface of wafer, 51... Bump, 51a... Bump surface, 501, 501 ′, 502 ′, 503, 503 ′ work, 6, 7, 8. 94 ... release film

Claims (3)

Attaching a back grind tape to the first surface of the semiconductor wafer having bumps (P1);
Grinding the second surface opposite to the first surface of the semiconductor wafer having the back grind tape affixed to the first surface (P2);
Peeling the back grind tape from the first surface of the semiconductor wafer ground on the second surface (P3);
And a step (P4) of attaching a curable resin film to the first surface side of the semiconductor wafer from which the back grind tape has been peeled off.   The method further comprises a step (P5) of attaching a second protective film-forming film to the second surface of the ground semiconductor wafer between the step (P2) and the step (P3). 2. A method for manufacturing a workpiece according to 1. Means for attaching a back grind tape to the first surface of the semiconductor wafer having bumps;
Means for grinding a second surface opposite to the first surface of the semiconductor wafer having the back grind tape affixed to the first surface;
Means for peeling the back grind tape from the first surface of the semiconductor wafer ground on the second surface;
Means for attaching a curable resin film to the first surface side of the semiconductor wafer from which the back grind tape has been peeled off.

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