WO2021166991A1 - Back-surface-protection-film forming composite, method for manufacturing first laminated body, method for manufacturing third laminated body, and method for manufacturing semiconductor device equipped with back surface protection film - Google Patents
Back-surface-protection-film forming composite, method for manufacturing first laminated body, method for manufacturing third laminated body, and method for manufacturing semiconductor device equipped with back surface protection film Download PDFInfo
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- WO2021166991A1 WO2021166991A1 PCT/JP2021/006067 JP2021006067W WO2021166991A1 WO 2021166991 A1 WO2021166991 A1 WO 2021166991A1 JP 2021006067 W JP2021006067 W JP 2021006067W WO 2021166991 A1 WO2021166991 A1 WO 2021166991A1
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- WIPO (PCT)
- Prior art keywords
- back surface
- surface protective
- protective film
- film
- film forming
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 172
- 239000004065 semiconductor Substances 0.000 title claims abstract description 160
- 238000000034 method Methods 0.000 title claims abstract description 94
- 239000002131 composite material Substances 0.000 title claims abstract description 67
- 238000010030 laminating Methods 0.000 claims abstract description 115
- 239000000758 substrate Substances 0.000 claims abstract description 49
- 230000001681 protective effect Effects 0.000 claims description 550
- 239000011241 protective layer Substances 0.000 claims description 143
- 230000008569 process Effects 0.000 claims description 13
- 238000003475 lamination Methods 0.000 abstract description 7
- 239000010410 layer Substances 0.000 description 56
- 235000012431 wafers Nutrition 0.000 description 55
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 49
- 229920005989 resin Polymers 0.000 description 40
- 239000011347 resin Substances 0.000 description 40
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 39
- 229920000642 polymer Polymers 0.000 description 39
- 229920001187 thermosetting polymer Polymers 0.000 description 39
- 239000000203 mixture Substances 0.000 description 37
- 239000000463 material Substances 0.000 description 36
- -1 2-ethylhexyl Chemical group 0.000 description 35
- 239000002585 base Substances 0.000 description 31
- 239000011230 binding agent Substances 0.000 description 25
- 239000003795 chemical substances by application Substances 0.000 description 23
- 229920000058 polyacrylate Polymers 0.000 description 23
- 238000002156 mixing Methods 0.000 description 19
- 150000001875 compounds Chemical class 0.000 description 18
- 239000002904 solvent Substances 0.000 description 18
- 239000003086 colorant Substances 0.000 description 16
- 239000003431 cross linking reagent Substances 0.000 description 16
- 239000000178 monomer Substances 0.000 description 16
- 238000011109 contamination Methods 0.000 description 14
- 230000001070 adhesive effect Effects 0.000 description 13
- 239000003822 epoxy resin Substances 0.000 description 12
- 125000000524 functional group Chemical group 0.000 description 12
- 229920000647 polyepoxide Polymers 0.000 description 12
- 239000000853 adhesive Substances 0.000 description 11
- 125000000217 alkyl group Chemical group 0.000 description 11
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 11
- 239000012948 isocyanate Substances 0.000 description 11
- 239000004925 Acrylic resin Substances 0.000 description 10
- 239000007822 coupling agent Substances 0.000 description 10
- 238000001035 drying Methods 0.000 description 10
- 229920005992 thermoplastic resin Polymers 0.000 description 10
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 9
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 9
- 229920000178 Acrylic resin Polymers 0.000 description 9
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 9
- 125000003277 amino group Chemical group 0.000 description 9
- 230000009477 glass transition Effects 0.000 description 9
- 230000001678 irradiating effect Effects 0.000 description 9
- 238000001179 sorption measurement Methods 0.000 description 9
- 238000004804 winding Methods 0.000 description 9
- 239000004743 Polypropylene Substances 0.000 description 8
- 239000012790 adhesive layer Substances 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 8
- 229920000139 polyethylene terephthalate Polymers 0.000 description 8
- 239000005020 polyethylene terephthalate Substances 0.000 description 8
- 229920001155 polypropylene Polymers 0.000 description 8
- 229920001296 polysiloxane Polymers 0.000 description 8
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 7
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 7
- 125000003700 epoxy group Chemical group 0.000 description 7
- 230000006870 function Effects 0.000 description 7
- 239000003999 initiator Substances 0.000 description 7
- 238000010330 laser marking Methods 0.000 description 6
- 230000007246 mechanism Effects 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 6
- 239000000654 additive Substances 0.000 description 5
- 125000004432 carbon atom Chemical group C* 0.000 description 5
- 238000013329 compounding Methods 0.000 description 5
- 229920001577 copolymer Polymers 0.000 description 5
- 229920001971 elastomer Polymers 0.000 description 5
- 238000010894 electron beam technology Methods 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 5
- 239000011256 inorganic filler Substances 0.000 description 5
- 229910003475 inorganic filler Inorganic materials 0.000 description 5
- ZXEKIIBDNHEJCQ-UHFFFAOYSA-N isobutanol Chemical compound CC(C)CO ZXEKIIBDNHEJCQ-UHFFFAOYSA-N 0.000 description 5
- 239000005011 phenolic resin Substances 0.000 description 5
- 239000005060 rubber Substances 0.000 description 5
- 239000007787 solid Substances 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 4
- 125000003647 acryloyl group Chemical group O=C([*])C([H])=C([H])[H] 0.000 description 4
- ISAOCJYIOMOJEB-UHFFFAOYSA-N benzoin Chemical compound C=1C=CC=CC=1C(O)C(=O)C1=CC=CC=C1 ISAOCJYIOMOJEB-UHFFFAOYSA-N 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 4
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 4
- 239000000049 pigment Substances 0.000 description 4
- 238000007639 printing Methods 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 4
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 3
- JAHNSTQSQJOJLO-UHFFFAOYSA-N 2-(3-fluorophenyl)-1h-imidazole Chemical compound FC1=CC=CC(C=2NC=CN=2)=C1 JAHNSTQSQJOJLO-UHFFFAOYSA-N 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- 239000005977 Ethylene Substances 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical compound C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 description 3
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 3
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 239000000428 dust Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 3
- 150000002466 imines Chemical class 0.000 description 3
- LVHBHZANLOWSRM-UHFFFAOYSA-N methylenebutanedioic acid Natural products OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 description 3
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N phenylbenzene Natural products C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 3
- 229920001225 polyester resin Polymers 0.000 description 3
- 239000004645 polyester resin Substances 0.000 description 3
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 3
- 239000011342 resin composition Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- HECLRDQVFMWTQS-RGOKHQFPSA-N 1755-01-7 Chemical compound C1[C@H]2[C@@H]3CC=C[C@@H]3[C@@H]1C=C2 HECLRDQVFMWTQS-RGOKHQFPSA-N 0.000 description 2
- OZAIFHULBGXAKX-UHFFFAOYSA-N 2-(2-cyanopropan-2-yldiazenyl)-2-methylpropanenitrile Chemical compound N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 2
- 125000000954 2-hydroxyethyl group Chemical group [H]C([*])([H])C([H])([H])O[H] 0.000 description 2
- XLSZMDLNRCVEIJ-UHFFFAOYSA-N 4-methylimidazole Chemical compound CC1=CNC=N1 XLSZMDLNRCVEIJ-UHFFFAOYSA-N 0.000 description 2
- KWOLFJPFCHCOCG-UHFFFAOYSA-N Acetophenone Chemical compound CC(=O)C1=CC=CC=C1 KWOLFJPFCHCOCG-UHFFFAOYSA-N 0.000 description 2
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 2
- 229930185605 Bisphenol Natural products 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- 239000005062 Polybutadiene Substances 0.000 description 2
- 239000004721 Polyphenylene oxide Substances 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- 244000028419 Styrax benzoin Species 0.000 description 2
- 235000000126 Styrax benzoin Nutrition 0.000 description 2
- 235000008411 Sumatra benzointree Nutrition 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 2
- 150000008065 acid anhydrides Chemical class 0.000 description 2
- 229920006243 acrylic copolymer Polymers 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 229920006223 adhesive resin Polymers 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229960002130 benzoin Drugs 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000004305 biphenyl Substances 0.000 description 2
- 235000010290 biphenyl Nutrition 0.000 description 2
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 2
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 239000006229 carbon black Substances 0.000 description 2
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 2
- 125000006841 cyclic skeleton Chemical group 0.000 description 2
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 125000004386 diacrylate group Chemical group 0.000 description 2
- QGBSISYHAICWAH-UHFFFAOYSA-N dicyandiamide Chemical compound NC(N)=NC#N QGBSISYHAICWAH-UHFFFAOYSA-N 0.000 description 2
- 238000007865 diluting Methods 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- HNRMPXKDFBEGFZ-UHFFFAOYSA-N ethyl trimethyl methane Natural products CCC(C)(C)C HNRMPXKDFBEGFZ-UHFFFAOYSA-N 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 238000005187 foaming Methods 0.000 description 2
- 238000005227 gel permeation chromatography Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 235000019382 gum benzoic Nutrition 0.000 description 2
- 150000002513 isocyanates Chemical class 0.000 description 2
- 229920001684 low density polyethylene Polymers 0.000 description 2
- 239000004702 low-density polyethylene Substances 0.000 description 2
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- QWVGKYWNOKOFNN-UHFFFAOYSA-N o-cresol Chemical compound CC1=CC=CC=C1O QWVGKYWNOKOFNN-UHFFFAOYSA-N 0.000 description 2
- 229920002857 polybutadiene Polymers 0.000 description 2
- 229920001083 polybutene Polymers 0.000 description 2
- 229920006289 polycarbonate film Polymers 0.000 description 2
- 229920000570 polyether Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- 125000001424 substituent group Chemical group 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- DVKJHBMWWAPEIU-UHFFFAOYSA-N toluene 2,4-diisocyanate Chemical compound CC1=CC=C(N=C=O)C=C1N=C=O DVKJHBMWWAPEIU-UHFFFAOYSA-N 0.000 description 2
- IMNIMPAHZVJRPE-UHFFFAOYSA-N triethylenediamine Chemical compound C1CN2CCN1CC2 IMNIMPAHZVJRPE-UHFFFAOYSA-N 0.000 description 2
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 2
- DTGKSKDOIYIVQL-WEDXCCLWSA-N (+)-borneol Chemical group C1C[C@@]2(C)[C@@H](O)C[C@@H]1C2(C)C DTGKSKDOIYIVQL-WEDXCCLWSA-N 0.000 description 1
- QNODIIQQMGDSEF-UHFFFAOYSA-N (1-hydroxycyclohexyl)-phenylmethanone Chemical compound C=1C=CC=CC=1C(=O)C1(O)CCCCC1 QNODIIQQMGDSEF-UHFFFAOYSA-N 0.000 description 1
- PSGCQDPCAWOCSH-UHFFFAOYSA-N (4,7,7-trimethyl-3-bicyclo[2.2.1]heptanyl) prop-2-enoate Chemical compound C1CC2(C)C(OC(=O)C=C)CC1C2(C)C PSGCQDPCAWOCSH-UHFFFAOYSA-N 0.000 description 1
- RUEBPOOTFCZRBC-UHFFFAOYSA-N (5-methyl-2-phenyl-1h-imidazol-4-yl)methanol Chemical compound OCC1=C(C)NC(C=2C=CC=CC=2)=N1 RUEBPOOTFCZRBC-UHFFFAOYSA-N 0.000 description 1
- 229920003067 (meth)acrylic acid ester copolymer Polymers 0.000 description 1
- MYWOJODOMFBVCB-UHFFFAOYSA-N 1,2,6-trimethylphenanthrene Chemical compound CC1=CC=C2C3=CC(C)=CC=C3C=CC2=C1C MYWOJODOMFBVCB-UHFFFAOYSA-N 0.000 description 1
- FKTHNVSLHLHISI-UHFFFAOYSA-N 1,2-bis(isocyanatomethyl)benzene Chemical compound O=C=NCC1=CC=CC=C1CN=C=O FKTHNVSLHLHISI-UHFFFAOYSA-N 0.000 description 1
- QWUWMCYKGHVNAV-UHFFFAOYSA-N 1,2-dihydrostilbene Chemical group C=1C=CC=CC=1CCC1=CC=CC=C1 QWUWMCYKGHVNAV-UHFFFAOYSA-N 0.000 description 1
- MSAHTMIQULFMRG-UHFFFAOYSA-N 1,2-diphenyl-2-propan-2-yloxyethanone Chemical compound C=1C=CC=CC=1C(OC(C)C)C(=O)C1=CC=CC=C1 MSAHTMIQULFMRG-UHFFFAOYSA-N 0.000 description 1
- RTTZISZSHSCFRH-UHFFFAOYSA-N 1,3-bis(isocyanatomethyl)benzene Chemical compound O=C=NCC1=CC=CC(CN=C=O)=C1 RTTZISZSHSCFRH-UHFFFAOYSA-N 0.000 description 1
- FWWWRCRHNMOYQY-UHFFFAOYSA-N 1,5-diisocyanato-2,4-dimethylbenzene Chemical compound CC1=CC(C)=C(N=C=O)C=C1N=C=O FWWWRCRHNMOYQY-UHFFFAOYSA-N 0.000 description 1
- DKEGCUDAFWNSSO-UHFFFAOYSA-N 1,8-dibromooctane Chemical compound BrCCCCCCCCBr DKEGCUDAFWNSSO-UHFFFAOYSA-N 0.000 description 1
- AHDSRXYHVZECER-UHFFFAOYSA-N 2,4,6-tris[(dimethylamino)methyl]phenol Chemical compound CN(C)CC1=CC(CN(C)C)=C(O)C(CN(C)C)=C1 AHDSRXYHVZECER-UHFFFAOYSA-N 0.000 description 1
- BTJPUDCSZVCXFQ-UHFFFAOYSA-N 2,4-diethylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(CC)=CC(CC)=C3SC2=C1 BTJPUDCSZVCXFQ-UHFFFAOYSA-N 0.000 description 1
- WWUCYCYSEUEANO-UHFFFAOYSA-N 2-(aziridin-1-yl)acetamide Chemical compound NC(=O)CN1CC1 WWUCYCYSEUEANO-UHFFFAOYSA-N 0.000 description 1
- FWLHAQYOFMQTHQ-UHFFFAOYSA-N 2-N-[8-[[8-(4-aminoanilino)-10-phenylphenazin-10-ium-2-yl]amino]-10-phenylphenazin-10-ium-2-yl]-8-N,10-diphenylphenazin-10-ium-2,8-diamine hydroxy-oxido-dioxochromium Chemical compound O[Cr]([O-])(=O)=O.O[Cr]([O-])(=O)=O.O[Cr]([O-])(=O)=O.Nc1ccc(Nc2ccc3nc4ccc(Nc5ccc6nc7ccc(Nc8ccc9nc%10ccc(Nc%11ccccc%11)cc%10[n+](-c%10ccccc%10)c9c8)cc7[n+](-c7ccccc7)c6c5)cc4[n+](-c4ccccc4)c3c2)cc1 FWLHAQYOFMQTHQ-UHFFFAOYSA-N 0.000 description 1
- IMSODMZESSGVBE-UHFFFAOYSA-N 2-Oxazoline Chemical compound C1CN=CO1 IMSODMZESSGVBE-UHFFFAOYSA-N 0.000 description 1
- KMNCBSZOIQAUFX-UHFFFAOYSA-N 2-ethoxy-1,2-diphenylethanone Chemical compound C=1C=CC=CC=1C(OCC)C(=O)C1=CC=CC=C1 KMNCBSZOIQAUFX-UHFFFAOYSA-N 0.000 description 1
- DPNXHTDWGGVXID-UHFFFAOYSA-N 2-isocyanatoethyl prop-2-enoate Chemical compound C=CC(=O)OCCN=C=O DPNXHTDWGGVXID-UHFFFAOYSA-N 0.000 description 1
- BQZJOQXSCSZQPS-UHFFFAOYSA-N 2-methoxy-1,2-diphenylethanone Chemical compound C=1C=CC=CC=1C(OC)C(=O)C1=CC=CC=C1 BQZJOQXSCSZQPS-UHFFFAOYSA-N 0.000 description 1
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 1
- ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 2-phenyl-1h-imidazole Chemical compound C1=CNC(C=2C=CC=CC=2)=N1 ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 0.000 description 1
- 150000004941 2-phenylimidazoles Chemical class 0.000 description 1
- IKYAJDOSWUATPI-UHFFFAOYSA-N 3-[dimethoxy(methyl)silyl]propane-1-thiol Chemical compound CO[Si](C)(OC)CCCS IKYAJDOSWUATPI-UHFFFAOYSA-N 0.000 description 1
- BUZICZZQJDLXJN-UHFFFAOYSA-N 3-azaniumyl-4-hydroxybutanoate Chemical compound OCC(N)CC(O)=O BUZICZZQJDLXJN-UHFFFAOYSA-N 0.000 description 1
- LVNLBBGBASVLLI-UHFFFAOYSA-N 3-triethoxysilylpropylurea Chemical compound CCO[Si](OCC)(OCC)CCCNC(N)=O LVNLBBGBASVLLI-UHFFFAOYSA-N 0.000 description 1
- SJECZPVISLOESU-UHFFFAOYSA-N 3-trimethoxysilylpropan-1-amine Chemical compound CO[Si](OC)(OC)CCCN SJECZPVISLOESU-UHFFFAOYSA-N 0.000 description 1
- UUEWCQRISZBELL-UHFFFAOYSA-N 3-trimethoxysilylpropane-1-thiol Chemical compound CO[Si](OC)(OC)CCCS UUEWCQRISZBELL-UHFFFAOYSA-N 0.000 description 1
- UPMLOUAZCHDJJD-UHFFFAOYSA-N 4,4'-Diphenylmethane Diisocyanate Chemical compound C1=CC(N=C=O)=CC=C1CC1=CC=C(N=C=O)C=C1 UPMLOUAZCHDJJD-UHFFFAOYSA-N 0.000 description 1
- FIHBHSQYSYVZQE-UHFFFAOYSA-N 6-prop-2-enoyloxyhexyl prop-2-enoate Chemical compound C=CC(=O)OCCCCCCOC(=O)C=C FIHBHSQYSYVZQE-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- LCFVJGUPQDGYKZ-UHFFFAOYSA-N Bisphenol A diglycidyl ether Chemical compound C=1C=C(OCC2OC2)C=CC=1C(C)(C)C(C=C1)=CC=C1OCC1CO1 LCFVJGUPQDGYKZ-UHFFFAOYSA-N 0.000 description 1
- 229920002799 BoPET Polymers 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- QSJXEFYPDANLFS-UHFFFAOYSA-N Diacetyl Chemical group CC(=O)C(C)=O QSJXEFYPDANLFS-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 239000005057 Hexamethylene diisocyanate Substances 0.000 description 1
- 239000005058 Isophorone diisocyanate Substances 0.000 description 1
- 229920010126 Linear Low Density Polyethylene (LLDPE) Polymers 0.000 description 1
- KDXKERNSBIXSRK-UHFFFAOYSA-N Lysine Natural products NCCCCC(N)C(O)=O KDXKERNSBIXSRK-UHFFFAOYSA-N 0.000 description 1
- 239000004472 Lysine Substances 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 1
- UEEJHVSXFDXPFK-UHFFFAOYSA-N N-dimethylaminoethanol Chemical compound CN(C)CCO UEEJHVSXFDXPFK-UHFFFAOYSA-N 0.000 description 1
- SQNJRXRBHXTJFQ-UHFFFAOYSA-N N1=C(N)N=C(N)N=C1N.C=C.C=C.C=C.N1(CC1)CC(=O)N Chemical compound N1=C(N)N=C(N)N=C1N.C=C.C=C.C=C.N1(CC1)CC(=O)N SQNJRXRBHXTJFQ-UHFFFAOYSA-N 0.000 description 1
- GWGWXYUPRTXVSY-UHFFFAOYSA-N N=C=O.N=C=O.CC1=CC=C(C)C=C1 Chemical compound N=C=O.N=C=O.CC1=CC=C(C)C=C1 GWGWXYUPRTXVSY-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- HVVWZTWDBSEWIH-UHFFFAOYSA-N [2-(hydroxymethyl)-3-prop-2-enoyloxy-2-(prop-2-enoyloxymethyl)propyl] prop-2-enoate Chemical compound C=CC(=O)OCC(CO)(COC(=O)C=C)COC(=O)C=C HVVWZTWDBSEWIH-UHFFFAOYSA-N 0.000 description 1
- INXWLSDYDXPENO-UHFFFAOYSA-N [2-(hydroxymethyl)-3-prop-2-enoyloxy-2-[[3-prop-2-enoyloxy-2,2-bis(prop-2-enoyloxymethyl)propoxy]methyl]propyl] prop-2-enoate Chemical compound C=CC(=O)OCC(COC(=O)C=C)(CO)COCC(COC(=O)C=C)(COC(=O)C=C)COC(=O)C=C INXWLSDYDXPENO-UHFFFAOYSA-N 0.000 description 1
- MPIAGWXWVAHQBB-UHFFFAOYSA-N [3-prop-2-enoyloxy-2-[[3-prop-2-enoyloxy-2,2-bis(prop-2-enoyloxymethyl)propoxy]methyl]-2-(prop-2-enoyloxymethyl)propyl] prop-2-enoate Chemical compound C=CC(=O)OCC(COC(=O)C=C)(COC(=O)C=C)COCC(COC(=O)C=C)(COC(=O)C=C)COC(=O)C=C MPIAGWXWVAHQBB-UHFFFAOYSA-N 0.000 description 1
- UUQQGGWZVKUCBD-UHFFFAOYSA-N [4-(hydroxymethyl)-2-phenyl-1h-imidazol-5-yl]methanol Chemical compound N1C(CO)=C(CO)N=C1C1=CC=CC=C1 UUQQGGWZVKUCBD-UHFFFAOYSA-N 0.000 description 1
- NOZAQBYNLKNDRT-UHFFFAOYSA-N [diacetyloxy(ethenyl)silyl] acetate Chemical compound CC(=O)O[Si](OC(C)=O)(OC(C)=O)C=C NOZAQBYNLKNDRT-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000004840 adhesive resin Substances 0.000 description 1
- 230000001476 alcoholic effect Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 125000002723 alicyclic group Chemical group 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 229920000180 alkyd Polymers 0.000 description 1
- 125000002947 alkylene group Chemical group 0.000 description 1
- 125000005529 alkyleneoxy group Chemical group 0.000 description 1
- HXBPYFMVGFDZFT-UHFFFAOYSA-N allyl isocyanate Chemical compound C=CCN=C=O HXBPYFMVGFDZFT-UHFFFAOYSA-N 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 239000002216 antistatic agent Substances 0.000 description 1
- 125000003710 aryl alkyl group Chemical group 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- CSNNWDJQKGMZPO-UHFFFAOYSA-N benzoic acid;2-hydroxy-1,2-diphenylethanone Chemical compound OC(=O)C1=CC=CC=C1.C=1C=CC=CC=1C(O)C(=O)C1=CC=CC=C1 CSNNWDJQKGMZPO-UHFFFAOYSA-N 0.000 description 1
- SCNCICQTOSFGRB-UHFFFAOYSA-N benzoic acid;2-hydroxy-1-(2-methylphenyl)-2-phenylethanone Chemical compound OC(=O)C1=CC=CC=C1.CC1=CC=CC=C1C(=O)C(O)C1=CC=CC=C1 SCNCICQTOSFGRB-UHFFFAOYSA-N 0.000 description 1
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 1
- 239000012965 benzophenone Substances 0.000 description 1
- WERYXYBDKMZEQL-UHFFFAOYSA-N butane-1,4-diol Chemical compound OCCCCO WERYXYBDKMZEQL-UHFFFAOYSA-N 0.000 description 1
- CQEYYJKEWSMYFG-UHFFFAOYSA-N butyl acrylate Chemical compound CCCCOC(=O)C=C CQEYYJKEWSMYFG-UHFFFAOYSA-N 0.000 description 1
- QHIWVLPBUQWDMQ-UHFFFAOYSA-N butyl prop-2-enoate;methyl 2-methylprop-2-enoate;prop-2-enoic acid Chemical compound OC(=O)C=C.COC(=O)C(C)=C.CCCCOC(=O)C=C QHIWVLPBUQWDMQ-UHFFFAOYSA-N 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 150000001718 carbodiimides Chemical class 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 150000001925 cycloalkenes Chemical class 0.000 description 1
- 229960002887 deanol Drugs 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- KORSJDCBLAPZEQ-UHFFFAOYSA-N dicyclohexylmethane-4,4'-diisocyanate Chemical compound C1CC(N=C=O)CCC1CC1CCC(N=C=O)CC1 KORSJDCBLAPZEQ-UHFFFAOYSA-N 0.000 description 1
- OTARVPUIYXHRRB-UHFFFAOYSA-N diethoxy-methyl-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCO[Si](C)(OCC)CCCOCC1CO1 OTARVPUIYXHRRB-UHFFFAOYSA-N 0.000 description 1
- 238000000113 differential scanning calorimetry Methods 0.000 description 1
- XXBDWLFCJWSEKW-UHFFFAOYSA-N dimethylbenzylamine Chemical compound CN(C)CC1=CC=CC=C1 XXBDWLFCJWSEKW-UHFFFAOYSA-N 0.000 description 1
- CZZYITDELCSZES-UHFFFAOYSA-N diphenylmethane Chemical compound C=1C=CC=CC=1CC1=CC=CC=C1 CZZYITDELCSZES-UHFFFAOYSA-N 0.000 description 1
- GPAYUJZHTULNBE-UHFFFAOYSA-N diphenylphosphine Chemical compound C=1C=CC=CC=1PC1=CC=CC=C1 GPAYUJZHTULNBE-UHFFFAOYSA-N 0.000 description 1
- VFHVQBAGLAREND-UHFFFAOYSA-N diphenylphosphoryl-(2,4,6-trimethylphenyl)methanone Chemical compound CC1=CC(C)=CC(C)=C1C(=O)P(=O)(C=1C=CC=CC=1)C1=CC=CC=C1 VFHVQBAGLAREND-UHFFFAOYSA-N 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- RJLZSKYNYLYCNY-UHFFFAOYSA-N ethyl carbamate;isocyanic acid Chemical group N=C=O.CCOC(N)=O RJLZSKYNYLYCNY-UHFFFAOYSA-N 0.000 description 1
- UHESRSKEBRADOO-UHFFFAOYSA-N ethyl carbamate;prop-2-enoic acid Chemical compound OC(=O)C=C.CCOC(N)=O UHESRSKEBRADOO-UHFFFAOYSA-N 0.000 description 1
- 229920001038 ethylene copolymer Polymers 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- VOZRXNHHFUQHIL-UHFFFAOYSA-N glycidyl methacrylate Chemical compound CC(=C)C(=O)OCC1CO1 VOZRXNHHFUQHIL-UHFFFAOYSA-N 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- RRAMGCGOFNQTLD-UHFFFAOYSA-N hexamethylene diisocyanate Chemical compound O=C=NCCCCCCN=C=O RRAMGCGOFNQTLD-UHFFFAOYSA-N 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 125000004029 hydroxymethyl group Chemical group [H]OC([H])([H])* 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000001023 inorganic pigment Substances 0.000 description 1
- 229920000554 ionomer Polymers 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229940035429 isobutyl alcohol Drugs 0.000 description 1
- IQPQWNKOIGAROB-UHFFFAOYSA-N isocyanate group Chemical group [N-]=C=O IQPQWNKOIGAROB-UHFFFAOYSA-N 0.000 description 1
- NIMLQBUJDJZYEJ-UHFFFAOYSA-N isophorone diisocyanate Chemical compound CC1(C)CC(N=C=O)CC(C)(CN=C=O)C1 NIMLQBUJDJZYEJ-UHFFFAOYSA-N 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- LUCXVPAZUDVVBT-UHFFFAOYSA-N methyl-[3-(2-methylphenoxy)-3-phenylpropyl]azanium;chloride Chemical compound Cl.C=1C=CC=CC=1C(CCNC)OC1=CC=CC=C1C LUCXVPAZUDVVBT-UHFFFAOYSA-N 0.000 description 1
- KBJFYLLAMSZSOG-UHFFFAOYSA-N n-(3-trimethoxysilylpropyl)aniline Chemical compound CO[Si](OC)(OC)CCCNC1=CC=CC=C1 KBJFYLLAMSZSOG-UHFFFAOYSA-N 0.000 description 1
- 239000004843 novolac epoxy resin Substances 0.000 description 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 1
- 229920002601 oligoester Polymers 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000012860 organic pigment Substances 0.000 description 1
- RPQRDASANLAFCM-UHFFFAOYSA-N oxiran-2-ylmethyl prop-2-enoate Chemical compound C=CC(=O)OCC1CO1 RPQRDASANLAFCM-UHFFFAOYSA-N 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920006287 phenoxy resin Polymers 0.000 description 1
- 239000013034 phenoxy resin Substances 0.000 description 1
- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 description 1
- 150000003003 phosphines Chemical class 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920001707 polybutylene terephthalate Polymers 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920006267 polyester film Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920006290 polyethylene naphthalate film Polymers 0.000 description 1
- 229920013716 polyethylene resin Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 229920000306 polymethylpentene Polymers 0.000 description 1
- 239000011116 polymethylpentene Substances 0.000 description 1
- 229920005862 polyol Polymers 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920005672 polyolefin resin Polymers 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 229920006264 polyurethane film Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- YOSXAXYCARLZTR-UHFFFAOYSA-N prop-2-enoyl isocyanate Chemical compound C=CC(=O)N=C=O YOSXAXYCARLZTR-UHFFFAOYSA-N 0.000 description 1
- 230000009993 protective function Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000007634 remodeling Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- RSVDRWTUCMTKBV-UHFFFAOYSA-N sbb057044 Chemical compound C12CC=CC2C2CC(OCCOC(=O)C=C)C1C2 RSVDRWTUCMTKBV-UHFFFAOYSA-N 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- RUELTTOHQODFPA-UHFFFAOYSA-N toluene 2,6-diisocyanate Chemical compound CC1=C(N=C=O)C=CC=C1N=C=O RUELTTOHQODFPA-UHFFFAOYSA-N 0.000 description 1
- TUQOTMZNTHZOKS-UHFFFAOYSA-N tributylphosphine Chemical compound CCCCP(CCCC)CCCC TUQOTMZNTHZOKS-UHFFFAOYSA-N 0.000 description 1
- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 description 1
- VTHOKNTVYKTUPI-UHFFFAOYSA-N triethoxy-[3-(3-triethoxysilylpropyltetrasulfanyl)propyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCSSSSCCC[Si](OCC)(OCC)OCC VTHOKNTVYKTUPI-UHFFFAOYSA-N 0.000 description 1
- DQZNLOXENNXVAD-UHFFFAOYSA-N trimethoxy-[2-(7-oxabicyclo[4.1.0]heptan-4-yl)ethyl]silane Chemical compound C1C(CC[Si](OC)(OC)OC)CCC2OC21 DQZNLOXENNXVAD-UHFFFAOYSA-N 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
- YUYCVXFAYWRXLS-UHFFFAOYSA-N trimethoxysilane Chemical compound CO[SiH](OC)OC YUYCVXFAYWRXLS-UHFFFAOYSA-N 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/02—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by a sequence of laminating steps, e.g. by adding new layers at consecutive laminating stations
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/12—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by using adhesives
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/14—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers
- B32B37/16—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers with all layers existing as coherent layers before laminating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/14—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers
- B32B37/26—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers with at least one layer which influences the bonding during the lamination process, e.g. release layers or pressure equalising layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/14—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers
- B32B37/26—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers with at least one layer which influences the bonding during the lamination process, e.g. release layers or pressure equalising layers
- B32B2037/268—Release layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B38/00—Ancillary operations in connection with laminating processes
- B32B2038/0052—Other operations not otherwise provided for
- B32B2038/0076—Curing, vulcanising, cross-linking
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
- B32B2457/08—PCBs, i.e. printed circuit boards
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68377—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support with parts of the auxiliary support remaining in the finished device
Definitions
- the present invention relates to a composite for forming a back surface protective film, a method for producing a first laminate, a method for producing a third laminate, and a method for producing a semiconductor device with a back surface protective film.
- the present application claims priority based on Japanese Patent Application No. 2020-028103 filed in Japan on February 21, 2020, the contents of which are incorporated herein by reference.
- semiconductor devices to which a mounting method called a face down method has been applied have been manufactured.
- a semiconductor chip having electrodes such as bumps on the circuit surface is used, and the electrodes are bonded to the substrate. Therefore, the back surface of the semiconductor chip opposite to the circuit surface may be exposed.
- a resin film containing an organic material is formed on the back surface of the exposed semiconductor chip as a back surface protective film, and may be incorporated into a semiconductor device as a semiconductor chip with a back surface protective film.
- the back surface protective film is used to prevent cracks from occurring in the semiconductor chip after the dicing step or packaging (for example, Patent Documents 1 and 2).
- Such a semiconductor chip with a back surface protective film is manufactured, for example, through the steps shown in FIGS. 1A to 1G. That is, the back surface protective film forming film 13 is laminated on the back surface 8b of the semiconductor wafer (also referred to as “semiconductor substrate”) 8 having a circuit surface (FIG. 1A), and the back surface protective film forming film 13 is heat-cured or energized.
- the back surface protective film 13' is linearly cured (FIG. 1B), the back surface protective film 13'is laser-marked (FIG. 1C), the support sheet 10 is laminated on the back surface protective film 13'(FIG.
- the laminate obtained in the lamination step of FIG. 1A is conveyed to the curing step of forming the back surface protective film 13'in FIG. 1B by thermosetting or energy ray curing the film 13 for forming the back surface protective film.
- the laminated body obtained in the laminating step adsorbs the suction surface having the suction holes of the transport arm to the back surface protective film forming film surface of the laminated body. It is transported in a state of being transported, accommodated in a cassette, and transported to an apparatus for performing a curing process.
- the back surface protective film forming film may be contaminated or deformed while being transported by being housed in the transport arm and the cassette.
- the device for attaching the back surface protective film forming film can be used. It is necessary to transport the laminated body to an apparatus for curing the back surface protective film forming film, and at that time, the back surface protective film forming film may be contaminated or deformed.
- the process from the laminating step to the curing step is performed by the same device, it can be performed by, for example, a device provided with a film pasting table for forming a back surface protective film, a unit for curing, and a transport arm.
- the work also referred to as “semiconductor substrate”
- the back surface protective film forming film affixing table by the conveying arm, and is previously outside or immediately before the apparatus on the back surface side of the work.
- a film for forming a back surface protective film processed into a size suitable for the work in the apparatus is attached to the structure to form a laminated body.
- the suction surface having the suction holes of the transport arm is attracted to the film surface for forming the back surface protective film of the laminate, and the laminate is transported to the unit to be cured. Heat is applied to the laminate conveyed to the unit to be cured, or energy rays are irradiated, and the film for forming the back surface protective film becomes the back surface protective film.
- the present invention has been made in view of the above circumstances, and in the method of manufacturing a semiconductor device with a back surface protective film, when a film for forming a back surface protective film is attached to the back surface of a semiconductor substrate and then transported, the back surface protective film is conveyed.
- An object of the present invention is to provide a method for manufacturing a semiconductor device with a film.
- a back surface protective film forming composite in which a protective layer and a back surface protective film forming film are laminated, and the back surface protective film forming film is attached to the back surface of a semiconductor substrate to form the semiconductor.
- the first laminating step of obtaining a second laminated body in which the substrate, the back surface protective film forming film, and the protective layer are laminated in this order, and the back surface protective film forming film of the second laminated body are cured.
- the semiconductor substrate, the back surface protective film, and the protective layer which include a curing step of forming the back surface protective film and a transfer step of transporting the second laminate from the first lamination step to the curing step.
- a composite for forming a back surface protective film which is used in a method for producing a first laminated body in which and are laminated in this order.
- a back surface protective film forming composite in which a protective layer and a back surface protective film forming film are laminated, and the back surface protective film forming film is attached to the back surface of a semiconductor substrate to form the semiconductor.
- a support sheet is attached to the first laminating step of obtaining a second laminated body in which the substrate, the back surface protective film forming film, and the protective layer are laminated in this order, and the protective layer of the second laminated body.
- a composite for forming a back surface protective film used in a method for producing a third laminate which comprises a transport step of transporting the second laminate from a step to the second lamination step.
- a method for producing a first laminated film including. [4] A method for manufacturing a third laminated body in which a semiconductor substrate, a film for forming a back surface protective film, a protective layer, and a support sheet are laminated in this order.
- a support sheet is attached to the protective layer of the second laminated body in the first laminating step of obtaining the semiconductor substrate, the back surface protective film forming film, the protective layer, and the support sheet.
- a third laminating step including a second laminating step of obtaining a third laminated body laminated in this order, and a transporting step of transporting the second laminated body from the first laminating step to the second laminating step. How to make a body.
- a support sheet is attached to the protective layer of the first laminate manufactured by the manufacturing method according to [3], and the semiconductor substrate, the back surface protective film, the protective layer, and the support sheet are attached.
- a method for manufacturing a semiconductor device with a back surface protective film which comprises a step of picking up the semiconductor device with a back surface protective film from the support sheet.
- the film for forming the back surface protective film of the third laminate produced by the production method according to [4] is cured to form a back surface protective film, and the semiconductor substrate, the back surface protective film, and the protection are obtained.
- a method for manufacturing a semiconductor device with a back surface protective film which comprises a step of picking up the semiconductor device with a back surface protective film from the support sheet.
- a curing step of curing the back surface protective film forming film to obtain a back surface protective film A method for manufacturing a semiconductor device with a back surface protective film, which comprises a step of picking up the semiconductor with a back surface protective film or a semiconductor device with a back surface protective film from the support sheet.
- the film for forming the back surface protective film is formed of an uncured curable resin composition, and the protective layer is formed of a cured curable resin or a thermoplastic resin, [1] or [2].
- the present invention in the method for manufacturing a semiconductor device with a back surface protective film, it is possible to prevent contamination and deformation of the back surface protective film forming film when the film for forming the back surface protective film is attached to the back surface of the work and then transported.
- a method for producing a back surface protective film, a method for producing a first laminate using the back surface protective film forming composite, a method for producing a third laminate, and a method for producing a semiconductor device with a back surface protective film are provided. NS.
- FIG. 2 is a cross-sectional view schematically showing an embodiment of the back surface protective film forming complex of the present invention.
- FIG. 3 is a cross-sectional view schematically showing another embodiment of the back surface protective film forming complex of the present invention.
- the featured parts may be enlarged for convenience, and the dimensional ratio of each component may not be the same as the actual one. No.
- the back surface protective film forming composite 1 shown in FIG. 2 has a protective layer 12 and a back surface protective film forming film 13 in this order.
- the back surface protective film forming film 13 is attached to the back surface of the work, and the work, the back surface protective film forming film 13, and the protective layer 12 are formed therein.
- the support sheet is attached to the protective layer 12 of the second laminated body, and the work, the back surface protective film forming film 13, and the protective layer are attached.
- the back surface protective film forming film 13 is attached to the back surface of the work, and the work, the back surface protective film forming film 13, and the protective layer 12 are attached.
- the protective layer 12 in the back surface protective film forming composite 1 of the present embodiment it is possible to prevent contamination and deformation of the back surface protective film forming film 13 (before curing) in the transport step.
- the back surface protective film forming composite 2 shown in FIG. 3 has a release film 151, a protective layer 12, and a back surface protective film forming film 13 in this order.
- the back surface protective film forming film 13 is attached to the back surface of the work, and the work, the back surface protective film forming film 13, and the protective layer 12 are peeled off. It is supported by the first laminating step of obtaining a fifth laminated body in which the film 151 is laminated in this order, and the protective layer 12 of the second laminated body obtained by peeling the release film 151 from the fifth laminated body.
- the third including a second laminating step of attaching a sheet to obtain the third laminated body and a transporting step of transporting the second laminated body from the first laminating step to the second laminating step. It is used in a method for manufacturing a laminate.
- the back surface protective film forming film 13 is attached to the back surface of the work, and the work, the back surface protective film forming film 13, and the protective layer 12 are attached.
- a method for producing the first laminate which comprises a curing step of curing the film 13 to form a back surface protective film and a transport step of transporting the second laminate from the first lamination step to the curing step. Used.
- the back surface protective film forming complex 1 and the back surface protective film forming complex 2 of the present embodiment have at least a back surface protective film forming film during the period from the first laminating step to the second laminating step. It is particularly preferably used in the method for producing the third laminated body, which is carried out by connecting the sticking device and the sticking device of the support sheet, or by using the same device.
- the back surface protective film forming film is attached at least between the first laminating step and the curing step. It is preferably used in a method for producing a first laminate, which is carried out by connecting an apparatus and an apparatus for curing a film for forming a back surface protective film, or by using the same apparatus.
- the thickness of the back surface protective film forming complex 1 is not particularly limited, but is preferably 30 to 550 ⁇ m, more preferably 35 to 450 ⁇ m, and even more preferably 40 to 400 ⁇ m.
- the thickness of the back surface protective film forming complex 1 is at least the above lower limit value, the strength of the back surface protective film can be increased.
- the thickness of the back surface protective film forming complex 1 is not more than the above upper limit value, the back surface protective film is easily diced.
- the thickness of the back surface protective film forming complex 2 is not particularly limited, but is preferably 30 to 550 ⁇ m, more preferably 35 to 450 ⁇ m, and even more preferably 40 to 400 ⁇ m.
- the thickness of the back surface protective film forming composite 2 is at least the above lower limit value, the strength of the back surface protective film can be increased.
- the thickness of the back surface protective film forming complex 2 is not more than the above upper limit value, the back surface protective film is easily diced.
- the back surface protective film forming film is used as a back surface protective film of a wafer by being attached to a wafer (that is, a work) and cured. Be done.
- the back surface protective film forming film has curability and may be an energy curable film or a thermosetting film.
- energy curable means a property of being cured by irradiating with energy rays
- thermosetting means a property of being cured by applying heat
- the "energy ray” means an electromagnetic wave or a charged particle beam having an energy quantum.
- energy rays include ultraviolet rays, radiation, electron beams and the like.
- Ultraviolet rays can be irradiated by using, for example, a high-pressure mercury lamp, a fusion lamp, a xenon lamp, a black light, an LED lamp, or the like as an ultraviolet source.
- the electron beam can be irradiated with an electron beam generated by an electron beam accelerator or the like.
- the thickness of the back surface protective film forming film is not particularly limited, but is preferably 3 to 300 ⁇ m, more preferably 5 to 250 ⁇ m, and even more preferably 7 to 200 ⁇ m.
- the strength of the back surface protective film can be further increased.
- the thickness of the back surface protective film forming film is not more than the above upper limit value, the back surface protective film is easily diced.
- composition for forming a back surface protective film preferably contains a binder polymer component and a curable component. That is, it is preferable that the back surface protective film forming composition is a (uncured) curable resin composition, and the back surface protective film forming film is formed of such a curable resin composition.
- Binder polymer component A binder polymer component is used to impart sufficient adhesiveness and film-forming property (sheet forming property) to the back surface protective film forming film.
- the binder polymer component conventionally known acrylic polymers, polyester resins, urethane resins, acrylic urethane resins, silicone resins, rubber-based polymers and the like can be used.
- the weight average molecular weight (Mw) of the binder polymer component is preferably 10,000 to 2 million, more preferably 100,000 to 1.2 million. If the weight average molecular weight of the binder polymer component is too low, the adhesive force between the back surface protective film forming film and the support sheet becomes high, and transfer failure of the back surface protective film forming film may occur. If it is too high, the back surface protective film is formed. The adhesiveness of the film for use may deteriorate and transfer to a chip or the like may not be possible, or the back surface protective film may peel off from the chip or the like after transfer.
- the weight average molecular weight of the binder polymer component is at least the above lower limit value, the adhesive strength between the back surface protective film forming film and the support sheet becomes high, and it is possible to suppress the occurrence of transfer failure of the back surface protective film forming film. ..
- the weight average molecular weight of the binder polymer component is not more than the above upper limit value, the adhesiveness of the back surface protective film forming film is lowered, and it is possible to prevent the binder polymer component from being unable to be transferred to a chip or the like.
- the weight average molecular weight of the binder polymer component is not more than the above upper limit value, it is possible to prevent the back surface protective film from peeling off from the chip or the like after transfer.
- the "weight average molecular weight” is a standard polystyrene-equivalent weight average molecular weight measured by gel permeation chromatography (GPC) unless otherwise specified.
- an acrylic polymer is preferably used as the binder polymer component.
- the glass transition temperature (Tg) of the acrylic polymer is preferably in the range of ⁇ 60 to 50 ° C., more preferably ⁇ 50 to 40 ° C., and particularly preferably ⁇ 40 to 30 ° C. If the glass transition temperature of the acrylic polymer is too low, the peeling force between the back surface protective film forming film and the support sheet may increase, causing transfer failure of the back surface protective film forming film. If it is too high, the back surface protective film forming film may occur. The adhesiveness of the film may be reduced and transfer to a chip or the like may not be possible, or the back surface protective film may be peeled off from the chip or the like after transfer.
- the glass transition temperature of the acrylic polymer is at least the above lower limit value, the peeling force between the back surface protective film forming film and the support sheet becomes large, and it is possible to suppress the occurrence of transfer failure of the back surface protective film forming film.
- the glass transition temperature of the acrylic polymer is not more than the above upper limit value, the adhesiveness of the back surface protective film forming film is lowered, and it is possible to suppress that the acrylic polymer cannot be transferred to a chip or the like.
- the glass transition temperature of the acrylic polymer is not more than the above upper limit value, it is possible to prevent the back surface protective film from peeling off from the chip or the like after transfer.
- the glass transition temperature of the acrylic polymer is determined, for example, by differential scanning calorimetry (DSC).
- Examples of the monomer constituting the acrylic polymer include a (meth) acrylic acid ester monomer or a derivative thereof.
- alkyl (meth) acrylates having an alkyl group having 1 to 18 carbon atoms specifically methyl (meth) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, butyl (meth) acrylate, 2-ethylhexyl.
- Examples include (meth) acrylate.
- a (meth) acrylate having a cyclic skeleton specifically, cyclohexyl (meth) acrylate, benzyl (meth) acrylate, isobornyl (meth) acrylate, dicyclopentanyl (meth) acrylate, dicyclopentenyl (meth) acrylate, Examples thereof include dicyclopentenyloxyethyl (meth) acrylate and imide (meth) acrylate.
- examples of the monomer having a functional group include hydroxymethyl (meth) acrylate having a hydroxyl group, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate and the like; and glycidyl (meth) having an epoxy group.
- examples include acrylate.
- an acrylic polymer containing a monomer having a hydroxyl group is preferable because it has good compatibility with a curable component described later.
- the acrylic polymer may be copolymerized with acrylic acid, methacrylic acid, itaconic acid, vinyl acetate, acrylonitrile, styrene and the like.
- (meth) acrylic acid is a concept including both “acrylic acid” and “methacrylic acid”.
- (meth) acrylate is a concept that includes both “acrylate” and “methacrylate”, and is a "(meth) acryloyl group”. Is a concept that includes both an "acryloyl group” and a “methacryloyl group”.
- thermoplastic resin for maintaining the flexibility of the back surface protective film after curing may be blended.
- a thermoplastic resin one having a weight average molecular weight of 1,000 to 100,000 is preferable, and one having a weight average molecular weight of 3,000 to 80,000 is more preferable.
- the glass transition temperature of the thermoplastic resin is preferably ⁇ 30 to 120 ° C., more preferably ⁇ 20 to 120 ° C.
- the thermoplastic resin include polyester resin, thermoplastic urethane resin, phenoxy resin, polybutene, polybutadiene, polystyrene and the like. These thermoplastic resins can be used alone or in admixture of two or more.
- the back surface protective film forming film follows the transfer surface of the back surface protective film forming film, and the generation of voids and the like can be suppressed.
- thermosetting component As the curable component, one or more selected from a thermosetting component and an energy ray curable component is used.
- thermosetting component a thermosetting resin and a thermosetting agent are used.
- thermosetting resin for example, an epoxy resin is preferable.
- the epoxy resin a conventionally known epoxy resin can be used.
- the epoxy resin include polyfunctional epoxy resin, biphenyl compound, bisphenol A diglycidyl ether and its hydrogenated product, orthocresol novolac epoxy resin, dicyclopentadiene type epoxy resin, biphenyl type epoxy resin, and bisphenol.
- examples thereof include epoxy compounds having bifunctionality or higher in the molecule, such as A-type epoxy resin, bisphenol F-type epoxy resin, and phenylene skeleton-type epoxy resin. These can be used alone or in combination of two or more.
- the thermosetting resin is preferably 1 to 1000 parts by mass, more preferably 10 to 500 parts by mass, and particularly preferably 20 to 200 parts by mass with respect to 100 parts by mass of the binder polymer component. included. If the content of the thermosetting resin is less than 1 part by mass, sufficient adhesiveness may not be obtained, and if it exceeds 1000 parts by mass, the peeling force between the back surface protective film forming film and the pressure-sensitive adhesive sheet or base film. May cause transfer failure of the back surface protective film forming film. That is, when the content of the thermosetting resin is at least the above lower limit value, sufficient adhesiveness can be obtained.
- thermosetting resin When the content of the thermosetting resin is not more than the above upper limit value, the peeling force between the back surface protective film forming film and the pressure-sensitive adhesive sheet or the base film becomes high, and transfer failure of the back surface protective film forming film occurs. Can be suppressed.
- thermosetting agent functions as a curing agent for thermosetting resins, especially epoxy resins.
- Preferred thermosetting agents include compounds having two or more functional groups capable of reacting with epoxy groups in one molecule.
- the functional group include a phenolic hydroxyl group, an alcoholic hydroxyl group, an amino group, a carboxyl group and an acid anhydride. Of these, phenolic hydroxyl groups, amino groups, acid anhydrides and the like are preferable, and phenolic hydroxyl groups and amino groups are more preferable.
- phenol-based curing agent examples include polyfunctional phenol resins, biphenols, novolak-type phenol resins, dicyclopentadiene-based phenol resins, zylock-type phenol resins, and aralkyl phenol resins.
- amine-based curing agent examples include DICY (dicyandiamide). These can be used alone or in combination of two or more.
- the content of the thermosetting agent is preferably 0.1 to 500 parts by mass, and more preferably 1 to 200 parts by mass with respect to 100 parts by mass of the thermosetting resin. If the content of the thermosetting agent is small, the adhesiveness may not be obtained due to insufficient curing, and if it is excessive, the hygroscopicity of the film for forming the back surface protective film may increase and the reliability of the semiconductor device may be lowered. That is, when the content of the thermosetting agent is not more than the above lower limit value, the thermosetting agent is sufficiently cured and sufficient adhesiveness is obtained. When the content of the thermosetting agent is not more than the above upper limit value, the hygroscopicity of the film for forming the back surface protective film is increased, and it is possible to suppress the deterioration of the reliability of the semiconductor device.
- the energy ray-curable component a low molecular weight compound (energy ray-polymerizable compound) containing an energy ray-polymerizable group and polymerizing and curing when irradiated with energy rays such as ultraviolet rays and electron beams can be used.
- energy ray-curable component trimethylolpropantriacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol monohydroxypentaacrylate, dipentaerythritol hexaacrylate or 1,4-butylene glycol.
- Examples thereof include acrylate-based compounds such as diacrylate, 1,6-hexanediol diacrylate, polyethylene glycol diacrylate, oligoester acrylate, urethane acrylate-based oligomer, epoxy-modified acrylate, polyether acrylate and itaconic acid oligomer.
- Such compounds have at least one polymerizable double bond in the molecule and usually have a weight average molecular weight of about 100 to 30,000, preferably about 300 to 10,000.
- the blending amount of the energy ray-polymerizable compound is preferably 1 to 1500 parts by mass, more preferably 10 to 500 parts by mass, and particularly preferably 20 to 200 parts by mass with respect to 100 parts by mass of the binder polymer component.
- an energy ray-curable polymer in which an energy ray-curable group is bonded to the main chain or side chain of the binder polymer component may be used.
- Such an energy ray-curable polymer has both a function as a binder polymer component and a function as a curable component.
- the main skeleton of the energy ray-curable polymer is not particularly limited, and may be an acrylic polymer that is widely used as a binder polymer component, or may be polyester, polyether, or the like. Since it is easy to synthesize and control the physical properties, it is particularly preferable that the energy ray-curable polymer has an acrylic polymer as a main skeleton.
- the energy ray-polymerizable group bonded to the main chain or side chain of the energy ray-curable polymer is, for example, a group containing an energy ray-polymerizable carbon-carbon double bond, specifically, a (meth) acryloyl group or the like. Can be exemplified.
- the energy ray-polymerizable group may be bonded to the energy ray-curable polymer via an alkylene group, an alkyleneoxy group, or a polyalkyleneoxy group.
- the weight average molecular weight (Mw) of the energy ray-curable polymer to which the energy ray-polymerizable group is bonded is preferably 10,000 to 2 million, more preferably 100,000 to 1.5 million.
- the glass transition temperature (Tg) of the energy ray-curable polymer is preferably in the range of ⁇ 60 to 50 ° C., more preferably ⁇ 50 to 40 ° C., and particularly preferably ⁇ 40 to 30 ° C.
- the energy ray-curable polymer reacts, for example, an acrylic polymer containing a functional group such as a hydroxyl group, a carboxyl group, an amino group, a substituted amino group, or an epoxy group with a polymerizable group-containing compound that reacts with the functional group. You can get it.
- the polymerizable group-containing compound include compounds having 1 to 5 substituents that react with the functional group and an energy ray-polymerizable carbon-carbon double bond for each molecule.
- substituent that reacts with the functional group include an isocyanate group, a glycidyl group, a carboxyl group and the like.
- Examples of the polymerizable group-containing compound include (meth) acryloyloxyethyl isocyanate, meta-isopropenyl- ⁇ , ⁇ -dimethylbenzyl isocyanate, (meth) acryloyl isocyanate, allyl isocyanate, glycidyl (meth) acrylate; (meth) acrylic acid and the like. Can be mentioned.
- the acrylic polymer is a (meth) acrylic monomer having a functional group such as a hydroxyl group, a carboxyl group, an amino group, a substituted amino group, or an epoxy group or a derivative thereof, and another (meth) acrylic acid ester monomer copolymerizable therewith.
- a functional group such as a hydroxyl group, a carboxyl group, an amino group, a substituted amino group, or an epoxy group or a derivative thereof
- another (meth) acrylic acid ester monomer copolymerizable therewith is preferably a copolymer composed of a derivative thereof.
- Examples of the (meth) acrylic monomer having a functional group such as a hydroxyl group, a carboxyl group, an amino group, a substituted amino group, and an epoxy group or a derivative thereof include 2-hydroxyethyl (meth) acrylate having a hydroxyl group and 2-hydroxy.
- Propyl (meth) acrylate; acrylic acid having a carboxyl group, methacrylic acid, itaconic acid; glycidyl methacrylate having an epoxy group, glycidyl acrylate and the like can be mentioned.
- an (meth) acrylic acid ester monomer or a derivative thereof that can be copolymerized with the above monomer for example, an alkyl (meth) acrylate having an alkyl group having 1 to 18 carbon atoms, specifically a methyl (meth) acrylate.
- the above-mentioned energy ray-polymerizable compound may be used in combination, or a binder polymer component may be used in combination.
- the energy ray-polymerizable compound is preferable with respect to 100 parts by mass of the total mass of the energy ray-curable polymer and the binder polymer component. Is contained in an amount of 1 to 1500 parts by mass, more preferably 10 to 500 parts by mass, and particularly preferably 20 to 200 parts by mass.
- the content of the energy ray-polymerizable compound is within the above numerical range, the curability of the back surface protective film forming composition can be further enhanced.
- the mass ratio of the thermosetting component and the energy ray-curable component is preferably, for example, 5:95 to 95: 5, and 10:90 to 90:10. Is more preferable, and 15:85 to 85:15 is even more preferable.
- the mass ratio of the thermosetting component and the energy ray-curable component is within the above numerical range, the curability of the back surface protective film forming composition can be further enhanced.
- the back surface protective film forming film By imparting energy ray curability to the back surface protective film forming film, the back surface protective film forming film can be cured easily and in a short time, and the production efficiency of the chip with the back surface protective film is improved. Since the energy ray-curable back surface protective film forming film is cured in a short time by energy ray irradiation, the back surface protective film can be easily formed and can contribute to the improvement of production efficiency.
- the back surface protective film forming film can contain the following components in addition to the above binder polymer component and curable component.
- the back surface protective film forming film preferably contains a colorant.
- a colorant in the back surface protective film forming film it is possible to shield infrared rays and the like generated from surrounding devices when the semiconductor device is incorporated into a device, and prevent the semiconductor device from malfunctioning due to them. ..
- a colorant in the back surface protective film forming film by blending a colorant in the back surface protective film forming film, the visibility of characters when a product number or the like is printed on the back surface protective film obtained by curing the back surface protective film forming film is improved. ..
- a product number or the like is usually printed on the surface of the back surface protective film by a laser marking method (a method of scraping off the back surface protective film surface with laser light).
- a laser marking method a method of scraping off the back surface protective film surface with laser light.
- the back surface protective film contains a colorant, a sufficient contrast difference between a portion of the back surface protective film that has been scraped off by the laser beam and a portion that has not been scraped off can be sufficiently obtained, and visibility is improved.
- the colorant organic or inorganic pigments and dyes are used. Among these, black pigments are preferable from the viewpoint of electromagnetic wave and infrared shielding properties.
- the black pigment carbon black, iron oxide, manganese dioxide, aniline black, activated carbon and the like are used, but the black pigment is not limited thereto. From the viewpoint of increasing the reliability of the semiconductor device, carbon black is particularly preferable.
- the colorant one type may be used alone, or two or more types may be used in combination.
- the high curability of the back surface protective film forming film in the present embodiment is particularly preferably exhibited when a colorant is used and the transparency of ultraviolet rays is reduced.
- Such a colorant examples include a colorant that reduces the transparency of visible light, a colorant that reduces the transparency of infrared rays and ultraviolet rays, and a colorant that reduces the transparency of visible light, infrared rays, and ultraviolet rays.
- a colorant that reduces the transparency of visible light examples include a colorant that reduces the transparency of visible light, a colorant that reduces the transparency of infrared rays and ultraviolet rays, and a colorant that reduces the transparency of visible light, infrared rays, and ultraviolet rays.
- black pigments such colorants are particularly those having absorbency or reflectivity in the wavelength region of visible light, the wavelength region of infrared rays and ultraviolet rays, and the wavelength region of visible light, infrared rays and ultraviolet rays. Not limited.
- the blending amount of the colorant is preferably 0.1 to 35 parts by mass, more preferably 0.5 to 25 parts by mass, and particularly preferably 0.5 to 25 parts by mass with respect to 100 parts by mass of the total solid content constituting the back surface protective film forming film. It is 1 to 15 parts by mass.
- the blending amount of the colorant is at least the above lower limit value, infrared rays and the like can be sufficiently shielded.
- the curability of the back surface protective film forming composition can be further enhanced.
- the curing accelerator is used to adjust the curing rate of the back surface protective film forming film.
- the curing accelerator is preferably used when the epoxy resin and the thermosetting agent are used in combination, especially in the curable component.
- Preferred curing accelerators are tertiary amines such as triethylenediamine, benzyldimethylamine, triethanolamine, dimethylaminoethanol, tris (dimethylaminomethyl) phenol; 2-methylimidazole, 2-phenylimidazole, 2-phenyl- Imidazoles such as 4-methylimidazole, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole; organic phosphines such as tributylphosphine, diphenylphosphine, triphenylphosphine; Examples thereof include tetraphenylborone salts such as tetraphenylphosphonium tetraphenylborate and triphenylphosphine tetraphenylborate. These can be used alone or in combination of two or more.
- the curing accelerator is contained in an amount of preferably 0.01 to 10 parts by mass, more preferably 0.1 to 1 part by mass with respect to 100 parts by mass of the curable component.
- the curing accelerator By containing the curing accelerator in an amount in the above range, it has excellent adhesive properties even when exposed to high temperature and high humidity, and achieves high reliability even when exposed to severe reflow conditions. be able to. If the content of the curing accelerator is low, sufficient adhesive properties cannot be obtained due to insufficient curing, and if it is excessive, the curing accelerator has high polarity. The reliability of the semiconductor device is lowered by moving to and segregating.
- the coupling agent may be used to improve any one or more of the adhesiveness, adhesion and cohesiveness of the back surface protective film to the chip of the back surface protective film forming film. Further, by using the coupling agent, the water resistance of the back surface protective film formed by curing the back surface protective film can be improved without impairing the heat resistance of the back surface protective film.
- the coupling agent a compound having a group that reacts with a functional group of a binder polymer component, a curable component, or the like is preferably used.
- a silane coupling agent is desirable. Examples of such a coupling agent include ⁇ -glycidoxypropyltrimethoxysilane, ⁇ -glycidoxypropylmethyldiethoxysilane, ⁇ - (3,4-epoxycyclohexyl) ethyltrimethoxysilane, and ⁇ - (methacryloxypropyl).
- the coupling agent is usually 0.1 to 20 parts by mass, preferably 0.2 to 10 parts by mass, and more preferably 0.3 to 5 parts by mass with respect to 100 parts by mass of the total of the binder polymer component and the curable component. Is included in the ratio of. If the content of the coupling agent is less than 0.1 parts by mass, the above effect may not be obtained, and if it exceeds 20 parts by mass, it may cause outgas. That is, when the content of the coupling agent is at least the above lower limit value, the above effect can be obtained. When the content of the coupling agent is not more than the above upper limit value, the generation of outgas can be suppressed.
- Inorganic filler By blending the inorganic filler into the film for forming the back surface protective film, it is possible to adjust the coefficient of thermal expansion of the back surface protective film after curing. Therefore, the reliability of the semiconductor device can be improved by optimizing the coefficient of thermal expansion of the back surface protective film after curing for the semiconductor chip. It is also possible to reduce the hygroscopicity of the back surface protective film after curing.
- Preferred inorganic fillers include powders of silica, alumina, talc, calcium carbonate, titanium oxide, iron oxide, silicon carbide, boron nitride and the like, spherical beads, single crystal fibers, glass fibers and the like.
- silica filler and alumina filler are preferable.
- the inorganic filler can be used alone or in combination of two or more.
- the content of the inorganic filler can be usually adjusted in the range of 1 to 80 parts by mass with respect to 100 parts by mass of the total solid content constituting the back surface protective film forming film.
- the film for forming a back surface protective film contains an energy ray-curable component as the above-mentioned curable component
- the energy ray-curable component is cured by irradiating with energy rays such as ultraviolet rays when using the film.
- energy rays such as ultraviolet rays
- photopolymerization initiators include benzophenone, acetophenone, benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin benzoic acid, methyl benzoin benzoate, benzoin dimethyl ketal, 2, 4-diethylthioxanthone, ⁇ -hydroxycyclohexylphenylketone, benzyldiphenylsulfide, tetramethylthiuram monosulfide, azobisisobutyronitrile, benzyl, dibenzyl, diacetyl, 1,2-diphenylmethane, 2-hydroxy-2-methyl Examples thereof include -1- [4- (1-methylvinyl) phenyl] propanone, 2,4,6-trimethylbenzoyldiphenylphosphine oxide and ⁇ -chloranthraquinone.
- the photopolymer include
- the blending ratio of the photopolymerization initiator is preferably 0.1 to 10 parts by mass and more preferably 1 to 5 parts by mass with respect to 100 parts by mass of the energy ray-curable component. If it is less than 0.1 part by mass, satisfactory transferability may not be obtained due to insufficient photopolymerization, and if it exceeds 10 parts by mass, a residue that does not contribute to photopolymerization is generated, and the back surface protective film forming film is formed. Curability may be insufficient. That is, when the blending ratio of the photopolymerization initiator is at least the above lower limit value, sufficient photopolymerization is performed and satisfactory transferability can be obtained. When the blending ratio of the photopolymerization initiator is not more than the above upper limit value, the formation of residues that do not contribute to photopolymerization can be suppressed, and the curability of the back surface protective film forming film can be further enhanced.
- Cross-linking agent A cross-linking agent can also be added to adjust the initial adhesive force and cohesive force of the back surface protective film forming film.
- examples of the cross-linking agent include an organic polyvalent isocyanate compound and an organic polyvalent imine compound.
- organic polyvalent isocyanate compound examples include aromatic polyvalent isocyanate compounds, aliphatic polyvalent isocyanate compounds, alicyclic polyvalent isocyanate compounds, trimerics of these organic polyvalent isocyanate compounds, and these organic polyvalent isocyanate compounds.
- examples thereof include a terminal isocyanate urethane prepolymer obtained by reacting with a polyol compound.
- organic polyvalent isocyanate compound examples include 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 1,3-xylylene diisocyanate, 1,4-xylene diisocyanate, diphenylmethane-4,4'-diisocyanate, and diphenylmethane.
- organic polyvalent imine compound examples include N, N'-diphenylmethane-4,4'-bis (1-aziridinecarboxyamide), trimethylpropan-tri- ⁇ -aziridinyl propionate, and tetramethylolmethane-tri.
- examples thereof include - ⁇ -aziridinyl propionate and N, N'-toluene-2,4-bis (1-aziridinecarboxyamide) triethylene melamine.
- the cross-linking agent is usually 0.01 to 20 parts by mass, preferably 0.1 to 10 parts by mass, and more preferably 0.5 to 5 parts by mass with respect to 100 parts by mass of the total amount of the binder polymer component and the energy ray-curable polymer. Used in proportions of parts.
- the content of the cross-linking agent is within the above numerical range, the initial adhesive force and the cohesive force of the back surface protective film forming film can be further enhanced.
- additives may be added to the back surface protective film forming film, if necessary.
- additives include leveling agents, plasticizers, antistatic agents, antioxidants, ion scavengers, gettering agents, chain transfer agents and the like.
- the composition for forming a back surface protective film preferably further contains a solvent.
- the composition for forming a back surface protective film containing a solvent has good handleability.
- the solvent is not particularly limited, but preferred ones are, for example, hydrocarbons such as toluene and xylene; alcohols such as methanol, ethanol, 2-propanol, isobutyl alcohol (2-methylpropan-1-ol) and 1-butanol. Examples thereof include esters such as ethyl acetate; ketones such as acetone and methyl ethyl ketone; ethers such as tetrahydrofuran; amides such as dimethylformamide and N-methylpyrrolidone (compounds having an amide bond).
- the solvent contained in the back surface protective film forming composition may be only one type, may be two or more types, and when two or more types are used, the combination and ratio thereof can be arbitrarily selected.
- the content of the solvent is preferably 5 to 95% by mass, more preferably 7 to 93% by mass, still more preferably 10 to 90% by mass, based on the total mass of the composition for forming the back surface protective film.
- the handleability of the back surface protective film forming composition can be further improved.
- the curability of the back surface protective film forming composition can be further enhanced.
- the solvent contained in the back surface protective film forming composition is preferably methyl ethyl ketone or the like from the viewpoint that the components contained in the back surface protective film forming composition can be mixed more uniformly.
- the back surface protective film forming film obtained by applying and drying the back surface protective film forming composition composed of the above components has adhesiveness and curability, and is a work (semiconductor) in an uncured state. It can be easily adhered by pressing it against a wafer, chip, etc.). When pressing, the back surface protective film forming film may be attached while being heated. After curing, a back surface protective film having high impact resistance can be finally provided, the adhesive strength is excellent, and a sufficient protective function can be maintained even under severe high temperature and high humidity conditions.
- the back surface protective film forming film may have a single-layer structure, or may have a multi-layer structure as long as it contains one or more layers containing the above components.
- the composition for forming a back surface protective film can be obtained by blending each component for forming the composition.
- the order of addition of each component at the time of blending is not particularly limited, and two or more kinds of components may be added at the same time.
- a solvent it may be used by mixing the solvent with any compounding component other than the solvent and diluting the compounding component in advance, or diluting any of the compounding components other than the solvent in advance. You may use it by mixing the solvent with these compounding components without leaving.
- the method of mixing each component at the time of blending is not particularly limited, and from known methods such as a method of rotating a stirrer or a stirring blade to mix; a method of mixing using a mixer; a method of adding ultrasonic waves to mix. It may be selected as appropriate.
- the temperature and time at the time of adding and mixing each component are not particularly limited as long as each compounding component does not deteriorate, and may be appropriately adjusted, but the temperature is preferably 15 to 30 ° C.
- the back surface protective film forming film can be formed by using a back surface protective film forming composition containing the constituent material.
- the back surface protective film forming film can be formed on a target portion by applying the back surface protective film forming composition to the surface to be formed of the back surface protective film forming film and drying it if necessary.
- the ratio of the contents of the components that do not vaporize at room temperature in the composition for forming the back surface protective film is usually the same as the ratio of the contents of the components of the film for forming the back surface protective film.
- room temperature means a temperature which is not particularly cooled or heated, that is, a normal temperature, and examples thereof include a temperature of 15 to 25 ° C.
- the composition for forming the back surface protective film may be applied by a known method, for example, an air knife coater, a blade coater, a bar coater, a gravure coater, a roll coater, a roll knife coater, a curtain coater, a die coater, and a knife coater.
- a method using various coaters such as a screen coater, a Meyer bar coater, and a knife coater.
- the drying conditions of the back surface protective film forming composition are not particularly limited, but when the back surface protective film forming composition contains a solvent described later, it is preferable to heat dry the composition.
- the composition for forming a back surface protective film containing a solvent is preferably dried at 70 to 130 ° C. for 10 seconds to 5 minutes, for example.
- the composition for forming a back surface protective film containing a solvent is more preferably dried at 80 to 130 ° C. for 20 seconds to 4 minutes, and dried at 90 to 130 ° C. for 30 seconds to 3 minutes. Is even more preferable.
- the heating temperature at the time of heating and drying is at least the above lower limit value, the composition for forming a back surface protective film can be sufficiently cured.
- the heating temperature at the time of heating and drying is not more than the above upper limit value, deterioration of the work can be suppressed.
- the drying time for heat-drying is at least the above lower limit value, the composition for forming a back surface protective film can be sufficiently cured.
- the productivity of the back surface protective film forming film can be improved.
- the protective layer is used as a layer for protecting the back surface protective film forming film.
- the back surface protective film forming film in the back surface protective film forming composite is attached to the back surface of the semiconductor substrate, and the semiconductor substrate, the back surface protective film forming film, and the protective layer are formed.
- the second laminating body is conveyed from the first laminating step to the second laminating step in a second laminating step of obtaining a third laminated body in which the protective layer and the support sheet are laminated in this order.
- the protective layer prevents contamination and deformation of the back surface protective film forming film (before curing).
- the back surface protective film forming film in the back surface protective film forming composite is attached to the back surface of the semiconductor substrate, and the semiconductor substrate, the back surface protective film forming film, and the protective layer are laminated in this order.
- the step includes a transport step of transporting the second laminate. The layer prevents contamination and deformation of the back surface protective film forming film (before curing).
- the thickness of the protective layer is not particularly limited, but is preferably 1 to 100 ⁇ m, more preferably 2 to 95 ⁇ m, and even more preferably 3 to 90 ⁇ m.
- the thickness of the protective layer can be determined, for example, by observing the cut surface obtained by cutting the back surface protective film forming complex in the thickness direction using a microscope or the like.
- the protective layer is not particularly limited, and examples thereof include an energy ray-curable film and a base material.
- an energy ray-curable film a cured energy ray-curable film described in the back surface protective film forming film can be used.
- an uncured energy ray-curable film it is preferable to use a film of a different type from the film for forming the back surface protective film.
- the protective layer the following energy ray-curable film for the protective layer can also be used.
- the energy ray-curable film for the protective layer and the base material for the protective layer that can be used as the protective layer will be described.
- the energy ray-curable film for the protective layer other than the energy ray-curable film described in the back surface protective film forming film is not particularly limited, and for example, an energy ray-curable urethane-containing resin can be used.
- the energy ray-curable urethane-containing resin include an energy ray-curable resin containing a urethane (meth) acrylate resin or a urethane polymer and an energy ray-polymerizable monomer as main components.
- the energy ray-curable film for the protective layer is preferably cured before the first laminating step of the present embodiment.
- a resin film is preferable as a base material that can be used as a protective layer.
- the resin film include polyethylene films such as low-density polyethylene (LDPE) films and linear low-density polyethylene (LLDPE) films, ethylene / propylene copolymer films, polypropylene films, polybutene films, polybutadiene films, and polymethylpentene.
- the base material used in one aspect of the present invention may be a single-layer film composed of one type of resin film, or may be a laminated film in which two or more types of resin films are laminated. Further, in one aspect of the present invention, a sheet obtained by subjecting the surface of a base material such as the above-mentioned resin film to a surface treatment may be used as a protective layer.
- resin films may be crosslinked films. Further, colored resin films or printed ones can also be used. Further, the resin film may be a sheet obtained by extruding a thermoplastic resin or may be a stretched resin film, or a curable resin thinned and cured by a predetermined means to form a sheet. May be used.
- a substrate having excellent heat resistance and a glass transition temperature of 70 ° C. or higher is preferable.
- the film having excellent heat resistance include a polyester film, a polycarbonate film, a polyphenylene sulfide film, a cycloolefin resin film, a polyimide resin film, a film formed by casting and curing an ultraviolet curable resin, and two or more of these.
- a laminated body and the like can be mentioned.
- the base material when a base material is used, only the base material may be used as the protective layer, or a sheet having an adhesive layer or a release agent layer on the base material may be used as the protective layer.
- a sheet having an adhesive layer or a release agent layer on the base material is used as the protective layer, in the back surface protective film forming composite, the pressure-sensitive adhesive layer or the release agent layer is the back surface protective film forming film and the base material. It is preferable that they are laminated between them.
- the pressure-sensitive adhesive layer can be appropriately selected from the pressure-sensitive adhesive layers described in the support sheet described later according to the type of the base material and the film for forming the back surface protective film.
- the release agent layer may be appropriately selected from among silicone-based, olefin-based, long-chain alkyl-based, alkyd-based, and fluorine-based release agent layers according to the type of the base material and the film for forming the back surface protective film. can.
- the protective film is usually composed of a base film and an adhesive layer laminated on the base film.
- the base film can be made of, for example, a thermoplastic resin.
- the thermoplastic resin include polyolefin resins such as polyethylene resins and polypropylene resins; polyester resins such as polyethylene terephthalate and polyethylene naphthalate; polycarbonate resins; (meth) acrylic resins.
- the pressure-sensitive adhesive layer can be made of an acrylic type, a rubber type, a urethane type, or a silicone type.
- the release film of the present embodiment has re-peelability after being attached.
- 6A to 6E are schematic cross-sectional views schematically showing an example of an embodiment of a method for manufacturing a third laminated body using the back surface protective film forming complex 1.
- the method for manufacturing the third laminated body of the present embodiment is a method for manufacturing the third laminated body 25 in which the work 14, the back surface protective film forming film 13, the protective layer 12, and the support sheet 10 are laminated in this order.
- the back surface protective film forming film 13 of the back surface protective film forming composite 1 is attached to the back surface 14b of the work 14, and the work 14, the back surface protective film forming film 13, and the protective layer 12 are attached to each other.
- a first laminating step (FIGS.
- FIGS. 7A to 7F are schematic cross-sectional views schematically showing an example of an embodiment of a method for manufacturing a third laminated body using the back surface protective film forming complex 2.
- the method for manufacturing the third laminated body of the present embodiment is a method for manufacturing the third laminated body 25 in which the work 14, the back surface protective film forming film 13, the protective layer 12, and the support sheet 10 are laminated in this order.
- the back surface protective film forming film 13 of the back surface protective film forming composite 2 is attached to the back surface 14b of the work 14, and the work 14, the back surface protective film forming film 13, the protective layer 12, and the protective layer 12 are attached.
- the support sheet 10 is attached to the protective layer 12 after the first laminating step (FIGS.
- FIGS. 1 and 4A to 4D are schematic cross-sectional views schematically showing an example of an embodiment of a method for manufacturing a first laminated body using the back surface protective film forming complex 1.
- the method for manufacturing the first laminated body of the present embodiment is a method for manufacturing the first laminated body 23 in which the work 14, the back surface protective film 13', and the protective layer 12 are laminated in this order, and the work 14 is manufactured.
- the back surface protective film forming film 13 of the back surface protective film forming composite 1 was attached to the back surface 14b, and the work 14, the back surface protective film forming film 13, and the protective layer 12 were laminated in this order.
- Transport for transporting the second laminated body 24 to the first laminating step (FIGS.
- 5A to 5E are schematic cross-sectional views schematically showing an example of an embodiment of a method for manufacturing a first laminated body using the back surface protective film forming complex 2.
- the method for manufacturing the first laminated body of the present embodiment is a method for manufacturing the first laminated body 23 in which the work 14, the back surface protective film 13', and the protective layer 12 are laminated in this order, and the work 14 is manufactured.
- the back surface protective film forming film 13 of the back surface protective film forming composite 2 is attached to the back surface 14b, and the work 14, the back surface protective film forming film 13, the protective layer 12, and the release film 151 are attached in this order.
- the first laminating step (FIGS.
- the transport step in which the protective film forming film 13 is cured to form the back surface protective film 13', and the back surface protective film forming film 13 of the second laminated body 24 are cured to form the back surface.
- the curing step (FIG. 5E) of forming the protective film 13'is included in this order.
- a semiconductor wafer is used as the work 14 shown in FIGS. 4A, 5A, 6A, and 7A.
- One surface of the semiconductor wafer is a circuit surface, and bumps are formed. Further, in order to prevent the circuit surface and bumps of the semiconductor wafer from being crushed during backside grinding of the semiconductor wafer and dimples and cracks on the back surface of the wafer, the circuit surface and bumps of the semiconductor wafer are protected from the circuit surface. It is protected by a tape 17.
- the circuit surface protection tape 17 is a back surface grinding tape, and the back surface of the semiconductor wafer, which is the work 14, (that is, the back surface of the work) is a ground surface.
- the circuit surface and bumps of the semiconductor wafer are also circuit surfaces in the manufacturing method for the first laminated body. It is preferably protected by a protective tape 17. In this case, it is preferable to peel off the circuit surface protection tape at any stage before the curing step represented by FIG. 4D or FIG. 5E.
- the work 14 is not limited as long as it has a circuit surface on one side and the other surface can be said to be the back surface.
- a semiconductor wafer having a circuit surface on one side or individual electronic components are sealed with a sealing resin, and one side has a terminal forming surface (in other words, a circuit surface) of a semiconductor device with terminals.
- An example includes a semiconductor device panel composed of a semiconductor device assembly with terminals.
- the circuit surface protection tape 17 for example, the surface protection sheet disclosed in JP-A-2016-192488 and JP-A-2009-141265 can be used.
- the circuit surface protection tape 17 includes an adhesive layer having an appropriate removability.
- the pressure-sensitive adhesive layer may be formed of a general-purpose weak adhesive type pressure-sensitive adhesive such as rubber-based, acrylic-based, silicone-based, urethane-based, and vinyl ether-based. Further, the pressure-sensitive adhesive layer may be an energy ray-curable pressure-sensitive adhesive that is cured by irradiation with energy rays and can be peeled off again.
- the first laminating step (FIGS. 6B to C or 7B to D) and the second laminating step (FIGS. 6D to E or 7E to F) are performed. It may be performed by separate devices (hereinafter, also referred to as method 1).
- an apparatus for attaching the back surface protective film forming film between the first laminating step and the second laminating step (FIGS. 6B to E or 7B to F). It is preferable that the device for attaching the support sheet is connected to the device, or the device is used in the same device (hereinafter, also referred to as method 2).
- the first laminating step (FIGS. 4B to C or 5B to D) and the curing step (FIG. 4D or 5E) may be performed by separate devices. Good (hereinafter, also referred to as method 3).
- an apparatus for attaching a back surface protective film forming film and a back surface protective film during the period from the first laminating step to the curing step (FIGS. 4B to D and 5B to E). It is preferable to perform the process by connecting devices for curing the forming film or in the same device (hereinafter, also referred to as method 4).
- the second laminated body in which the back surface protective film forming film 13 and the protective layer 12 are laminated on the work 14 is housed in the cassette. Without doing so, the sheets can be conveyed one by one to the second laminating step shown in FIGS. 6D to 6E or 7E to 7F.
- the second laminated body in which the back surface protective film forming film 13 and the protective layer 12 are laminated on the work 14 is not housed in the cassette.
- 4D, or 5E can be transported one by one to the curing step shown in FIG. 5E. By performing in the same device, the device space can be further reduced.
- a conventional device By connecting a device for attaching the back surface protective film forming film and a device for attaching the support sheet (or a device for curing the back surface protective film forming film), a conventional device can be used without designing from scratch. It can be dealt with by remodeling, and the initial cost can be reduced. Since the second laminated body is not housed in the cassette and transported to the outside of the apparatus, the production efficiency can be improved and the contamination of the second laminated body can be suppressed.
- the back surface protective film forming film 13 and the protective layer 12 used in the first laminating step may be processed into the shape of the work in advance, or may be processed in the same apparatus immediately before the first laminating step. May be good.
- the back surface protective film forming film 13 and the protective layer 12 may be processed as follows after performing the first laminating step.
- the back surface protective film forming composite 1 is used, in the first laminating step, the back surface protective film forming film 13 of the back surface protective film forming complex 1 is attached to the back surface of the work 14, and the work 14 and the back surface protective film forming composite 1 are attached.
- the back surface protective film forming film 13 and the protective layer 12 are processed into the shape of a work. ..
- the back surface protective film forming film 13 of the back surface protective film forming composite 2 is attached to the back surface of the work 14, and the release film 151 is used.
- the back surface protective film forming film 13 and the protective layer 12 are formed on the work. Processed into a shape.
- the transport distance of the work 14 up to can be designed to be 7,000 mm or less, and the device space can be reduced. Transport of the work 14 from the sticking start point of the first laminating step to the sticking completion point of the second laminating step (or the sticking start point of the first laminating step to the curing completion point of the curing step).
- the distance can be 6500 mm or less, 6000 mm or less, 4500 mm or less, or 3000 mm or less.
- the lower limit of the transport distance of the work 14 is not particularly limited, but may be, for example, 100 mm.
- the curing of the curing step is completed from the start of pasting of the first laminating step to the completion of pasting of the second laminating step (or from the start of pasting of the first laminating step).
- the transport time of the work 14 up to (hour) can be reduced to 400 s or less, and the process time can be shortened.
- the time can be 300 s or less, 250 s or less, 200 s or less, or 150 s or less.
- the lower limit of the transport time of the work 14 is not particularly limited, but may be, for example, 10 s.
- the speed at which the support sheet 10 is attached to the exposed surface of the protective layer 12 can be 100 mm / sec or less, 80 mm / sec or less, or 60 mm / sec or less. It can be 40 mm / sec or less.
- the adhesion between the protective layer 12 and the support sheet 10 can be improved.
- the sticking speed in the first laminating step and the sticking speed in the second laminating step can be 2 mm / sec or more, 5 mm / sec or more, or 10 mm / sec or more. You can also do it.
- the production efficiency of the first laminated body 23 and the third laminated body 25 is improved by the sticking speed in the first laminating step and the sticking speed in the second laminating step being equal to or higher than the above lower limit value.
- the transport time of the work 14 from the start of sticking of the first laminating step to the completion of sticking of the second laminating step (or from the start of sticking of the first laminating step to the completion of curing of the curing step) is set. , 400 s or less.
- the device for attaching the back surface protective film forming film and the device for attaching the support sheet (or the back surface protective film forming film are cured).
- the same device can be implemented by, for example, a device including a back surface protective film forming film sticking table, a support sheet sticking table (or a curing unit), and a transport arm.
- the work put into the apparatus is conveyed to the back surface protective film forming film attachment table by the transport arm, and the back surface protective film forming film of the back surface protective film forming complex 1 is placed on the back surface side of the work. It is affixed (first laminating step).
- the suction surface having the suction holes of the transport arm is attracted to the protective layer surface of the laminated body obtained in the first laminating step, and the second laminating step (or the film for forming the back surface protective film) to which the support sheet is attached is cured. (Transfer process).
- back surface protective film forming composite 1 of the present embodiment By using the back surface protective film forming composite 1 of the present embodiment, it is possible to prevent contamination and deformation of the back surface protective film forming film 13 in the transfer step.
- the device preferably includes 1 to 5 tables for attaching a film for forming a back surface protective film, and more preferably 1 to 3 tables.
- the number of the back surface protective film forming film sticking tables in the apparatus is not less than the lower limit value of the above range, the production efficiency is increased, and when it is not more than the upper limit value, the space of the apparatus can be reduced.
- the device preferably includes 1 to 5 support sheet attachment tables, and more preferably 1 to 3 tables.
- the number of support sheet attachment tables in the device is at least the lower limit of the above range, the production efficiency is increased, and when it is at least the upper limit, the space of the device can be reduced.
- the device is provided with a transfer arm according to each transfer path.
- the ratio of the number of transport arms to the total number of tables is 1 or more, the production efficiency can be improved. Further, when two or more tables are provided, if the ratio of the number of transfer arms to the total number of tables is more than 0 and less than 1 (for example, the total number of transfer arms is 1 for two tables), the space of the device is reduced. Is possible.
- Specific examples of connecting the device for attaching the back surface protective film forming film and the device for attaching the support sheet include a device having a mechanism for attaching the back surface protective film forming film and a mechanism for attaching the support sheet. Examples thereof include a method in which the devices are made continuous and the second laminated body in which the back surface protective film forming film 13 is attached to the work 14 is conveyed one by one by using a conveying arm between the mechanisms.
- Specific examples of connecting a device for attaching the back surface protective film forming film and a device for curing the back surface protective film forming film include a device having a mechanism for attaching the back surface protective film forming film and a back surface protective film forming device.
- the first laminating step is preferably performed by the following method.
- the case where the back surface protective film forming film 13 and the protective layer 12 used in the first laminating step are processed into the shape of the work in advance or processed in the same apparatus immediately before the first laminating step is performed.
- a band-shaped back surface protective film forming composite 3 represented by FIG. 9 having a release film 152 on the outermost surface of the back surface protective film forming film 13 of the back surface protective film forming composite 2 of the present embodiment is prepared.
- the strip-shaped back surface protective film forming complex 3 is preferably rolled and stored.
- the release film 152 is peeled off, and the back surface protective film forming film 13 and the protective layer 12 are cut into the shape of the work 14. Then, the laminated body composed of the back surface protective film forming film 13 and the protective layer 12 on the outer peripheral portion is removed by winding.
- the winding of the outer peripheral portion described above involves winding only the back surface protective film forming film 13. Since the back surface protective film forming film 13 is thin and fragile, cutting may occur during winding, and winding of the outer peripheral portion may not be successful.
- the above-mentioned winding of the outer peripheral portion involves winding the laminated body composed of the back surface protective film forming film 13 and the protective layer 12. By having the protective layer 12, the laminated body becomes thicker and stronger, so that the possibility of cutting during winding is reduced, and the outer peripheral portion can be wound efficiently.
- the back surface protective film forming composite 2 of the present embodiment which has been cut into the shape of the work, is attached to the back surface of the work 14, and the work 14, the back surface protective film forming film 13, and the protective layer 12 are attached. And the release film 151 are laminated in this order to obtain a laminated body. As described above, the release film 151 remains strip-shaped because it has not been cut. By winding the strip-shaped release film 151, the release film 151 is peeled off to obtain a second laminated body 24 in which the work 14, the back surface protective film forming film 13, and the protective layer 12 are laminated in this order.
- the support sheet 10 is laminated on the protective layer 12.
- the support sheet 10 is, for example, a circular polyolefin film having a thickness of 80 ⁇ m and a diameter of 270 mm, and may be provided with an adhesive layer for jigs on the outer peripheral portion.
- the work 14 may be fixed to the fixing jig 18 together with the back surface protective film forming film 13 and the protective layer 12.
- the support sheet 10 may be laminated on the protective layer 12 and fixed to the fixing jig 18 (FIG. 6E or FIG. 7F).
- Examples of the support sheet 10 used in one aspect of the present invention include a sheet composed of only the base material 101 and a pressure-sensitive adhesive sheet having the pressure-sensitive adhesive layer 102 on the base material 101.
- the support sheet included in the third laminated body of one aspect of the present invention is a release sheet for preventing dust or the like from adhering to the surface of the back surface protective film forming film, or the surface of the back surface protective film forming film in a dicing step or the like. It plays the role of a dicing sheet or the like for protection.
- the thickness of the support sheet is appropriately selected depending on the intended use, but is preferably 10 to 500 ⁇ m, more preferably 10 to 500 ⁇ m, from the viewpoint of imparting sufficient flexibility to the composite sheet and improving the adhesiveness to the silicon wafer. Is 20 to 350 ⁇ m, more preferably 30 to 200 ⁇ m.
- the thickness of the support sheet includes not only the thickness of the base material constituting the support sheet but also the thickness of those layers and the film when the pressure-sensitive adhesive layer is provided.
- the base material 101 constituting the support sheet 10 the base material described in the protective layer can be used. Further, in one aspect of the present invention, a sheet obtained by subjecting the surface of a base material such as the above-mentioned resin film to a surface treatment may be used as a support sheet.
- a base material containing a polypropylene film is preferable from the viewpoint that it has excellent heat resistance, has expandability because it has appropriate flexibility, and easily maintains pickup suitability.
- the base material containing the polypropylene film may have a single-layer structure composed of only the polypropylene film or a multi-layer structure composed of the polypropylene film and another resin film.
- the film for forming the back surface protective film is thermosetting, the resin film constituting the base material has heat resistance, thereby suppressing damage due to heat of the base material and suppressing the occurrence of defects in the manufacturing process of the semiconductor device. can.
- the surface tension of the surface of the base material in contact with the surface of the back surface protective film forming film is preferable from the viewpoint of adjusting the peeling force within a certain range. Is 20 to 50 mN / m, more preferably 23 to 45 mN / m, and even more preferably 25 to 40 mN / m.
- the thickness of the base material constituting the support sheet is preferably 10 to 500 ⁇ m, more preferably 15 to 300 ⁇ m, and further preferably 20 to 200 ⁇ m.
- Examples of the pressure-sensitive adhesive sheet used as the support sheet 10 in one aspect of the present invention include those having a pressure-sensitive adhesive layer 102 formed from a pressure-sensitive adhesive on a base material 101 such as the above-mentioned resin film.
- FIG. 8 is a schematic cross-sectional view showing an example of a support sheet 10 in which the pressure-sensitive adhesive layer 102 is provided on the base material 101.
- the support sheet 10 includes the pressure-sensitive adhesive layer 102
- the pressure-sensitive adhesive layer 102 of the support sheet 10 is laminated on the protective layer 12 in the second laminating step.
- Examples of the pressure-sensitive adhesive which is a material for forming the pressure-sensitive adhesive layer include a pressure-sensitive adhesive composition containing a pressure-sensitive adhesive resin, and the pressure-sensitive adhesive composition further contains a general-purpose additive such as the above-mentioned cross-linking agent and pressure-sensitive adhesive.
- Examples of the adhesive resin include acrylic resin, urethane resin, rubber resin, silicone resin, vinyl ether resin, and the like when focusing on the structure of the resin, and when focusing on the function of the resin.
- an energy ray-curable pressure-sensitive adhesive, a heat-foaming type pressure-sensitive adhesive, an energy ray-foaming type pressure-sensitive adhesive, and the like can be mentioned.
- the pressure-sensitive adhesive layer 102 of the support sheet is preferably a strong pressure-sensitive adhesive layer in order to ensure adhesion to the protective layer. It may be an energy ray-curable pressure-sensitive adhesive layer formed from a pressure-sensitive adhesive composition containing an energy ray-curable resin.
- an adhesive containing an acrylic resin is preferable.
- the acrylic resin an acrylic polymer having a structural unit (x1) derived from alkyl (meth) acrylate is preferable, and the structural unit (x1) and the structural unit (x2) derived from the functional group-containing monomer are used.
- the acrylic copolymer having is more preferable.
- the alkyl group of the alkyl (meth) acrylate has preferably 1 to 18 carbon atoms, more preferably 1 to 12 carbon atoms, and even more preferably 1 to 8 carbon atoms.
- Examples of the alkyl (meth) acrylate include the same alkyl (meth) acrylates described in the above-mentioned binder polymer component section.
- the alkyl (meth) acrylate may be used alone or in combination of two or more.
- the content of the structural unit (x1) is usually 50 to 100% by mass, preferably 50 to 99.9% by mass, and more preferably 60 to 99 with respect to the total structural unit (100% by mass) of the acrylic polymer. It is by mass, more preferably 70 to 95% by mass.
- Examples of the functional group-containing monomer include a hydroxy group-containing monomer, a carboxy group-containing monomer, an epoxy group-containing monomer, and the like, and specific examples of each monomer are the same as those exemplified in the binder polymer component portion. can give. In addition, these may be used alone or in combination of 2 or more types.
- the content of the structural unit (x2) is usually 0 to 40% by mass, preferably 0.1 to 40% by mass, and more preferably 1 to 30 with respect to the total structural unit (100% by mass) of the acrylic polymer. It is by mass, more preferably 5 to 20% by mass.
- the acrylic resin used in one embodiment of the present invention is obtained by reacting an acrylic copolymer having the above-mentioned structural units (x1) and (x2) with a compound having an energy ray-polymerizable group. It may be an energy ray-curable acrylic resin.
- the compound having an energy ray-polymerizable group may be a compound having a polymerizable group such as a (meth) acryloyl group or a vinyl group.
- a cross-linking agent When a pressure-sensitive adhesive containing an acrylic resin is used, it is preferable to contain a cross-linking agent together with the acrylic resin from the viewpoint of adjusting the peeling force within a certain range.
- the cross-linking agent include isocyanate-based cross-linking agents, imine-based cross-linking agents, epoxy-based cross-linking agents, oxazoline-based cross-linking agents, carbodiimide-based cross-linking agents, and the like, from the viewpoint of adjusting the peeling force within a certain range. Isocyanate-based cross-linking agents are preferred.
- the content of the cross-linking agent is preferably 0.01 to 20 parts by mass, more preferably 0.1 to 15 parts by mass, based on the total mass (100 parts by mass) of the acrylic resin contained in the pressure-sensitive adhesive. It is more preferably 0.5 to 10 parts by mass, and even more preferably 1 to 8 parts by mass.
- the support sheet 10 may be composed of one layer (single layer) or may be composed of two or more layers.
- the constituent materials and the thicknesses of the plurality of layers may be the same or different from each other, and the combination of the plurality of layers is not particularly limited as long as the effects of the present invention are not impaired.
- a plurality of layers may be the same or different from each other
- all layers may be the same or all layers are different. It means that only some of the layers may be the same, and further, “multiple layers are different from each other” means that "at least one of the constituent materials and thicknesses of each layer is different from each other”. Means.
- the support sheet may be transparent, opaque, or colored depending on the purpose.
- the support sheet preferably allows energy rays to pass through.
- the support sheet is preferably transparent.
- the circuit surface of the work 14 is protected by the circuit surface protection tape 17, and after the second laminating step, the circuit surface protection tape 17 is peeled off from the circuit surface of the work 14.
- the circuit surface protection tape 17 has an adhesive layer on the side that is adhered to the circuit surface.
- the type of the pressure-sensitive adhesive layer is not limited as long as it has an appropriate removability to the work, and is formed of a general-purpose pressure-sensitive adhesive such as rubber-based, acrylic-based, silicone-based, urethane-based, and vinyl ether-based. You may. Further, it may be formed from an energy ray-curable pressure-sensitive adhesive that is cured by irradiation with energy rays and becomes removable.
- the pressure-sensitive adhesive layer is formed of an energy ray-curable pressure-sensitive adhesive
- the pressure-sensitive adhesive layer of the circuit surface protection tape 17 is irradiated with energy rays to cure the pressure-sensitive adhesive layer and peel it off again.
- the circuit surface protection tape 17 can be easily peeled off from the circuit surface of the work 14.
- the method for producing the third laminated body of the present embodiment may include a step of irradiating the back surface protective film forming film 13 with a laser from the side of the support sheet 10 to perform laser marking.
- a film for forming a back surface protective film is formed.
- the surface of the 13 in contact with the protective layer 12 can be laser-marked.
- the method for producing the first laminated body of the present embodiment may include a step of irradiating the back surface protective film forming film 13 or the back surface protective film 13'with a laser to perform laser marking.
- the back surface protective film forming composite 1 of the present embodiment in the method for producing the first laminated body and the method for producing the third laminated body, contamination and deformation of the back surface protective film forming film 13 are prevented. .. Therefore, contamination and deformation of the back surface protective film 13'obtained by curing the back surface protective film forming film 13 are also prevented.
- the back surface protective film forming film 13 or the back surface protective film 13' is contaminated and deformed (when the surface has irregularities)
- laser marking is performed by irradiating the laser through the support sheet 10
- printing is defective. Will occur, and the problem of poor visibility after printing will occur.
- the back surface protective film forming composite 1 of the present embodiment in the method for producing the first laminated body and the method for producing the third laminated body, the back surface protective film forming film 13 (back surface protective film 13') can be obtained. Contamination and deformation are suppressed, and as a result, the above-mentioned printing defects are suppressed, and visibility after printing is improved.
- the back surface protective film forming film 13 of the third laminated body 25 produced by the method for producing the third laminated body is cured to obtain the back surface protective film 13'.
- the support sheet 10 is attached to the protective layer 12 of the first laminated body 23 manufactured by the method for manufacturing the first laminated body, and the work 14 and the work 14 are attached.
- FIG. 10A to 10C are schematic cross-sectional views schematically showing an example of an embodiment of a method for manufacturing a fourth laminated body.
- the method for manufacturing the fourth laminated body of the present embodiment is a peeling step of peeling the circuit surface protection tape 17 from the circuit surface of the work 14 after the second laminating step in the method for manufacturing the third laminated body.
- FIG. 10A a step of irradiating the back surface protective film forming film 13 with a laser from the side of the support sheet 10 to perform laser marking (FIG. 10B), and curing the back surface protective film 13 to cure the back surface protective film 13 Includes a curing step (FIG. 10C).
- a thermosetting film for forming a back surface protective film is used, and in the curing step of the present embodiment, the film is thermoset at 130 ° C. for 2 hours.
- the curing conditions are as long as the degree of curing is such that the back surface protective film sufficiently exerts its function. It is not particularly limited, and may be appropriately selected depending on the type of the thermosetting film for forming the back surface protective film.
- the heating temperature at the time of thermosetting is preferably 100 to 200 ° C, more preferably 110 to 180 ° C, and particularly preferably 120 to 170 ° C.
- the heating time during the thermosetting is preferably 0.5 to 5 hours, more preferably 0.5 to 3 hours, and particularly preferably 1 to 2 hours.
- the order of the peeling steps is preferably before the curing step in consideration of the heat resistance of the circuit surface protection tape 17.
- FIG. 11A to 11C are schematic cross-sectional views schematically showing another example of the embodiment of the method for manufacturing the fourth laminated body.
- the method for manufacturing the fourth laminated body of the present embodiment is a peeling step of peeling the circuit surface protection tape 17 from the circuit surface of the work 14 after the second laminating step in the method for manufacturing the third laminated body.
- FIG. 11A a curing step (FIG. 11B) in which the back surface protective film forming film 13 is cured to form the back surface protective film 13', and the back surface protective film 13'is irradiated with a laser from the side of the support sheet 10 to obtain a laser.
- a marking step FIG. 11C).
- FIG. 12A and 12B are schematic cross-sectional views schematically showing another example of the embodiment of the method for manufacturing the fourth laminated body.
- the method for producing the fourth laminated body of the present embodiment includes a second laminating step of attaching a support sheet to the first laminated body 23 produced by the method for producing the first laminated body.
- the step of peeling off the circuit surface protection tape 17 and the step of irradiating the laser from the side of the support sheet 10 to perform laser marking may be included in the step of manufacturing the first laminated body 23, and FIG. 12A , B may be included in the process of manufacturing the first laminated body 23 to the fourth laminated body 26.
- 12C to 12C and 13A to 13C are schematic cross-sectional views schematically showing an example of an embodiment of a method for manufacturing a semiconductor device with a back surface protective film.
- the work 14, the back surface protective film 13', and the protective layer 12 of the fourth laminated body 26 manufactured by the method for manufacturing the fourth laminated body are diced.
- the step of forming the semiconductor device 22'with the back surface protective film (FIGS. 12C, 12D, 13A, and 13B) and the step of picking up the semiconductor device 22'with the back surface protective film from the protective layer 12 (FIGS. 12E, 12E, 13C) and is included.
- FIG. 14A to 14D are schematic cross-sectional views schematically showing another example of the embodiment of the method for manufacturing a semiconductor device with a back surface protective film.
- the back surface protective film forming film 13, the work 14 and the protective layer 12 of the third laminate 25 manufactured by the method for manufacturing the third laminate are diced.
- the step of forming the semiconductor device 22 with the back surface protective film forming film (FIGS. 14A and 14B) and the curing step of curing the back surface protective film forming film 13 to form the back surface protective film 13'(FIG. 14C).
- the step (FIG. 14D) of picking up the semiconductor device 22'with the back surface protective film from the support sheet 10 (protective layer 12) is included.
- the dicing in the above-mentioned method for manufacturing a semiconductor device can be performed by each dicing such as blade dicing using a blade, laser dicing by laser irradiation, or water dicing by spraying water containing an abrasive.
- the protective layer, the back surface protective film (film for forming the back surface protective film), and the work are cut together on the support sheet. ..
- the dicing in the above-mentioned manufacturing method of the semiconductor device can also be performed by stealth dicing (registered trademark).
- stealth dicing registered trademark
- the modified layer of the wafer is altered by irradiation with laser light, and its strength is weakened. Therefore, when a force is applied to the wafer, cracks extending in both sides of the wafer are generated in the modified layer inside the wafer, which serves as a starting point for dividing (cutting) the wafer.
- a force is applied to the wafer to divide the wafer at the site of the modified layer to prepare chips.
- the wafer on which the modified layer is formed which is held on the support sheet via the protective layer and the back surface protective film (film for forming the back surface protective film), is protected by the support sheet, the protective layer, and the back surface.
- a chip with a back surface protective film can be produced by applying a force to the wafer by stretching the film (film for forming a back surface protective film) in a direction parallel to the surface of the wafer.
- the back surface protective film forming film 13 is thermosetting, and in the step of forming the back surface protective film of the present embodiment, for example, the back surface protective film forming film 13 Is thermoset at 130 ° C. for 2 hours.
- the curing conditions for forming the back surface protective film by thermosetting the thermosetting film for forming the back surface protective film are as long as the degree of curing is such that the back surface protective film sufficiently exerts its function.
- the method is not particularly limited, and may be appropriately selected depending on the type of the thermosetting film for forming the back surface protective film.
- the back surface protective film forming film 13 is energy ray curable, and in the step of forming the back surface protective film, energy rays are applied to the back surface protective film forming film 13. It may be a step of irradiating and curing the energy ray.
- the curing conditions when the energy ray-curable back surface protective film forming film is energy ray-cured to form the back surface protective film are particularly limited as long as the degree of curing is such that the back surface protective film sufficiently exerts its function. However, it may be appropriately selected depending on the type of the energy ray-curable back surface protective film forming film.
- the illuminance of the energy ray at the time of energy ray curing of the energy ray curable back surface protective film forming film is preferably 4 to 280 mW / cm 2.
- the amount of light of the energy rays at the time of curing is preferably 3 to 1000 mJ / cm 2.
- the energy ray-curable back surface protective film forming film for example, those disclosed in International Publication No. 2017/188200 and International Publication No. 2017/188218 can also be used.
- the semiconductor device 22'with the back surface protective film is picked up from the support sheet 10.
- a thermosetting film is used as the back surface protective film forming film 13
- the adhesive force between the back surface protective film 13'after curing and the support sheet 10 becomes large, which may make picking up difficult. In this case, it is necessary to adjust the composition of the pressure-sensitive adhesive component of the support sheet.
- the semiconductor device 22'with the back surface protective film picks up from the protective layer 12. In this case, if the adhesive strength between the protective layer 12 and the support sheet 10 is sufficiently increased, pickup can be easily performed without optimizing the adhesive strength between the semiconductor device 22'with the back surface protective film and the protective layer 12. Can be done.
- the wafer was adsorbed and held for a minute at a vacuum source of ⁇ 80 kPa or less.
- the wafer with the composite for forming the back surface protective film was set on a table at room temperature with the semiconductor wafer side facing down, and the adsorption of the robot arm was stopped.
- the upper surface of the wafer with the composite for forming the back surface protective film was visually confirmed, and the wafer in which no adsorption trace was visible was designated as A, and the wafer in which the adsorption trace was visible was designated as B.
- a first release sheet (Lintec Corporation: SP-PET5011, thickness 50 ⁇ m) in which a silicone-based release agent layer is formed on one side of a polyethylene terephthalate (PET) film, and a silicone-based release agent on one side of the PET film.
- a second release sheet (manufactured by Lintec Corporation: SP-PET38131, thickness 38 ⁇ m) on which a layer was formed was prepared.
- a coating solution for a film for forming a back surface protective film is applied on the peeled surface of the first release sheet with a knife coater, and then dried in an oven at 120 ° C. for 2 minutes to form a back surface protective film having a thickness of 40 ⁇ m. A film was formed. Next, the peeling surface of the second release sheet was overlapped with the back surface protective film forming film and both were bonded to each other, and the first release sheet and the back surface protective film forming film (Lintec Corporation: LC2846, thickness: 40 ⁇ m). A sheet for forming a back surface protective film made of a second release sheet was obtained.
- a sheet manufactured by Lintec Corporation: SP-PET5011, thickness 50 ⁇ m
- a silicone-based release agent layer formed on one side of a polyethylene terephthalate (PET) film, which is the first release sheet described above, is used as the protective layer 1. board.
- a film for forming the protective layer 2 was produced by the following method. It contains an acrylic polymer (100 parts by mass, solid content) and a trifunctional xylylene diisocyanate-based cross-linking agent (Mitsui Takeda Chemical Co., Ltd .: Takenate D110N) (10.7 parts by mass, solid content), and methyl ethyl ketone as a solvent.
- a pressure-sensitive adhesive composition having a solid content concentration of 30% by mass was prepared.
- the acrylic polymer is obtained by copolymerizing -2-ethylhexyl acrylate (36 parts by mass), butyl acrylate (59 parts by mass), and -2-hydroxyethyl acrylate (5 parts by mass).
- the weight average molecular weight is 600,000.
- the pressure-sensitive adhesive composition is applied to the peel-treated surface of a release film (Lintec Corporation: SP-PET38131, thickness 38 ⁇ m) in which one side of a polyethylene terephthalate (PET) film is peel-treated by silicone treatment, and at 120 ° C. By heating and drying for 2 minutes, a pressure-sensitive adhesive layer having a thickness of 5 ⁇ m was formed. Next, a polypropylene film (Young's modulus 400 MPa, thickness 80 ⁇ m) is attached to the exposed surface of the pressure-sensitive adhesive layer as a base material, so that a protective layer having the pressure-sensitive adhesive layer on one surface of the base material is provided. 2 A film for forming was obtained.
- the polypropylene film used in the production of the protective layer 2 forming film was used (without the adhesive layer).
- Example 1 The second release sheet on the back surface protective film forming film side is peeled off, the exposed surface is attached to an 8-inch semiconductor wafer (thickness 300 ⁇ m), and the back surface is protected with the first release sheet left as the protective layer 1.
- a wafer with a film-forming complex A was obtained.
- the deformation of the back surface protective film forming film in the conveying step was evaluated by the above-mentioned method. Table 1 shows the adsorption pressure and the results in the above evaluation.
- Example 2 The second release sheet on the back surface protective film forming film side is peeled off, the exposed surface is attached to an 8-inch semiconductor wafer (thickness 300 ⁇ m), and the first release sheet is further peeled off to expose the back surface protective film forming film.
- the release film of the protective layer 2 forming film was peeled off and an exposed pressure-sensitive adhesive layer was attached thereto to obtain a wafer with a composite B for forming a back surface protective film.
- the deformation of the back surface protective film forming film in the conveying step was evaluated by the above-mentioned method. Table 1 shows the adsorption pressure and the results in the above evaluation.
- Example 3 The second release sheet on the back surface protective film forming film side is peeled off, the exposed surface is attached to an 8-inch semiconductor wafer (thickness 300 ⁇ m), and the first release sheet is further peeled off to expose the back surface protective film forming film.
- a film for forming the protective layer 3 was attached to the wafer to obtain a wafer with the composite C for forming the back surface protective film.
- the deformation of the back surface protective film forming film in the conveying step was evaluated by the above-mentioned method. Table 1 shows the adsorption pressure and the results in the above evaluation.
- the back surface protective film forming composite of the present invention can be used for manufacturing a semiconductor device with a back surface protective film.
- circuit surface protection tape 18 ... fixing jig, 21 ... semiconductor device, 22 ... back surface protection film Semiconductor device with forming film, 22'... Semiconductor device with backside protective film, 23 ... First laminate, 24 ... Second laminate, 25 ... Third laminate, 26 ... Fourth laminated body
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Abstract
A back-surface-protection-film forming composite (1) that is formed by laminating a back-surface-protection-film forming film (13) on a protection layer (12) is used for a method for manufacturing a first laminated body, said method including: a first lamination step for bonding the back-surface-protection-film forming film (13) to a back surface of a semiconductor substrate to obtain a second laminated body in which the semiconductor substrate, the back-surface-protection-film forming film (13), and the protection layer (12) are laminated in that order; a curing step for curing the back-surface-protection-film forming film (13) of the second laminated body to obtain a back surface protection film; and a transportation step for transporting the second laminated body from the first lamination step to the curing step, whereby the first laminated body includes the semiconductor substrate, the back surface protection film, and the protection layer (12) that are laminated in that order.
Description
本発明は、裏面保護膜形成用複合体、第一積層体の製造方法、第三積層体の製造方法、及び裏面保護膜付き半導体装置の製造方法に関する。
本願は、2020年2月21日に日本に出願された特願2020-028103号に基づき優先権を主張し、その内容をここに援用する。 The present invention relates to a composite for forming a back surface protective film, a method for producing a first laminate, a method for producing a third laminate, and a method for producing a semiconductor device with a back surface protective film.
The present application claims priority based on Japanese Patent Application No. 2020-028103 filed in Japan on February 21, 2020, the contents of which are incorporated herein by reference.
本願は、2020年2月21日に日本に出願された特願2020-028103号に基づき優先権を主張し、その内容をここに援用する。 The present invention relates to a composite for forming a back surface protective film, a method for producing a first laminate, a method for producing a third laminate, and a method for producing a semiconductor device with a back surface protective film.
The present application claims priority based on Japanese Patent Application No. 2020-028103 filed in Japan on February 21, 2020, the contents of which are incorporated herein by reference.
近年、いわゆるフェースダウン(face down)方式と呼ばれる実装法を適用した半導体装置の製造が行われている。フェースダウン方式においては、回路面上にバンプ等の電極を有する半導体チップが用いられ、前記電極が基板と接合される。このため、半導体チップの回路面とは反対側の裏面は剥き出しとなることがある。
In recent years, semiconductor devices to which a mounting method called a face down method has been applied have been manufactured. In the face-down method, a semiconductor chip having electrodes such as bumps on the circuit surface is used, and the electrodes are bonded to the substrate. Therefore, the back surface of the semiconductor chip opposite to the circuit surface may be exposed.
この剥き出しとなった半導体チップの裏面には、裏面保護膜として、有機材料を含有する樹脂膜が形成され、裏面保護膜付き半導体チップとして半導体装置に取り込まれることがある。裏面保護膜は、ダイシング工程やパッケージングの後に、半導体チップにおいてクラックが発生するのを防止するために利用される(例えば、特許文献1,2)。
A resin film containing an organic material is formed on the back surface of the exposed semiconductor chip as a back surface protective film, and may be incorporated into a semiconductor device as a semiconductor chip with a back surface protective film. The back surface protective film is used to prevent cracks from occurring in the semiconductor chip after the dicing step or packaging (for example, Patent Documents 1 and 2).
このような裏面保護膜付き半導体チップは、例えば、図1A~Gに示される工程を経て製造される。すなわち、回路面を有する半導体ウエハ(「半導体基板」ともいう。)8の裏面8bに、裏面保護膜形成用フィルム13を積層し(図1A)、裏面保護膜形成用フィルム13を熱硬化又はエネルギー線硬化させて裏面保護膜13’とし(図1B)、裏面保護膜13’にレーザーマーキングし(図1C)、裏面保護膜13’に支持シート10を積層し(図1D)、半導体ウエハ8及び裏面保護膜13’をダイシングして、裏面保護膜付き半導体チップ7とし(図1E及び図1F)、裏面保護膜付き半導体チップ7を、支持シート10からピックアップする(図1G)方法が知られている。
Such a semiconductor chip with a back surface protective film is manufactured, for example, through the steps shown in FIGS. 1A to 1G. That is, the back surface protective film forming film 13 is laminated on the back surface 8b of the semiconductor wafer (also referred to as “semiconductor substrate”) 8 having a circuit surface (FIG. 1A), and the back surface protective film forming film 13 is heat-cured or energized. The back surface protective film 13'is linearly cured (FIG. 1B), the back surface protective film 13'is laser-marked (FIG. 1C), the support sheet 10 is laminated on the back surface protective film 13'(FIG. 1D), and the semiconductor wafer 8 and the semiconductor wafer 8 and A method is known in which the back surface protective film 13'is diced to obtain a semiconductor chip 7 with a back surface protective film (FIGS. 1E and 1F), and the semiconductor chip 7 with a back surface protective film is picked up from the support sheet 10 (FIG. 1G). There is.
図1Aの積層工程で得られた積層体は、図1Bで裏面保護膜形成用フィルム13を熱硬化又はエネルギー線硬化させて裏面保護膜13’とする硬化工程へ搬送される。前記積層工程と前記硬化工程を別々の装置で行う場合、前記積層工程で得られた積層体は、搬送アームの吸着穴を有する吸着面を、前記積層体の裏面保護膜形成用フィルム面に吸着した状態で搬送されてカセットに収容されて、硬化工程を行う装置に搬送される。この場合、搬送アーム及びカセット収容されて搬送される間に裏面保護膜形成用フィルムが汚染、変形する恐れがある。
The laminate obtained in the lamination step of FIG. 1A is conveyed to the curing step of forming the back surface protective film 13'in FIG. 1B by thermosetting or energy ray curing the film 13 for forming the back surface protective film. When the laminating step and the curing step are performed by separate devices, the laminated body obtained in the laminating step adsorbs the suction surface having the suction holes of the transport arm to the back surface protective film forming film surface of the laminated body. It is transported in a state of being transported, accommodated in a cassette, and transported to an apparatus for performing a curing process. In this case, the back surface protective film forming film may be contaminated or deformed while being transported by being housed in the transport arm and the cassette.
前記積層工程と前記硬化工程を、裏面保護膜形成用フィルムを貼付する装置と裏面保護膜形成用フィルムを硬化させる装置を連結して行う場合も、裏面保護膜形成用フィルムを貼付する装置で得られた積層体を、裏面保護膜形成用フィルムを硬化させる装置に搬送する必要があり、その際に裏面保護膜形成用フィルムが汚染、変形する恐れがある。
Even when the laminating step and the curing step are performed by connecting the device for attaching the back surface protective film forming film and the device for curing the back surface protective film forming film, the device for attaching the back surface protective film forming film can be used. It is necessary to transport the laminated body to an apparatus for curing the back surface protective film forming film, and at that time, the back surface protective film forming film may be contaminated or deformed.
前記積層工程から前記硬化工程までの間を同一の装置で行う場合、例えば、裏面保護膜形成用フィルム貼付テーブル、硬化を行うユニット及び搬送アームを備える装置により実施することができる。具体的には前記装置に投入されたワーク(「半導体基板」ともいう。)は、搬送アームにより、裏面保護膜形成用フィルム貼付テーブルへ搬送され、前記ワークの裏面側に事前に装置外又は直前に装置内でワークに合わせたサイズに加工された裏面保護膜形成用フィルムが貼付され、積層体となる。
When the process from the laminating step to the curing step is performed by the same device, it can be performed by, for example, a device provided with a film pasting table for forming a back surface protective film, a unit for curing, and a transport arm. Specifically, the work (also referred to as “semiconductor substrate”) put into the apparatus is conveyed to the back surface protective film forming film affixing table by the conveying arm, and is previously outside or immediately before the apparatus on the back surface side of the work. A film for forming a back surface protective film processed into a size suitable for the work in the apparatus is attached to the structure to form a laminated body.
搬送アームの吸着穴を有する吸着面を、前記積層体の裏面保護膜形成用フィルム面に吸着させ、前記積層体を、硬化を行うユニットへ搬送する。硬化を行うユニットに搬送された積層体に熱を加える、又はエネルギー線が照射され、裏面保護膜形成用フィルムは裏面保護膜となる。
The suction surface having the suction holes of the transport arm is attracted to the film surface for forming the back surface protective film of the laminate, and the laminate is transported to the unit to be cured. Heat is applied to the laminate conveyed to the unit to be cured, or energy rays are irradiated, and the film for forming the back surface protective film becomes the back surface protective film.
本願の発明者が、搬送アームにより搬送された後の裏面保護膜形成用フィルムの表面を観察したところ、搬送アームの吸着穴に起因する変形(凹凸)が生じることが判明した。また、搬送の際に裏面保護膜形成用フィルムにゴミや埃が付着して汚染する可能性も考えられた。上記のような変形(凹凸)、又はゴミや埃の付着が発生すると、半導体装置の信頼性が低下するという不利益を生じるおそれがある。
When the inventor of the present application observed the surface of the back surface protective film forming film after being transported by the transport arm, it was found that deformation (unevenness) due to the suction holes of the transport arm occurs. In addition, there is a possibility that dust and dirt may adhere to the back surface protective film forming film during transportation and contaminate it. If the above-mentioned deformation (unevenness) or adhesion of dust or dirt occurs, there is a possibility that the reliability of the semiconductor device may be lowered.
本発明は、上記事情に鑑みてなされたものであり、裏面保護膜付き半導体装置の製造方法において、裏面保護膜形成用フィルムを半導体基板の裏面に貼付した後に搬送する場合において、前記裏面保護膜形成用フィルムの汚染及び変形を防止可能な、裏面保護膜形成用複合体、前記裏面保護膜形成用複合体を使用した第一積層体の製造方法、第三積層体の製造方法、及び裏面保護膜付き半導体装置の製造方法を提供することを課題とする。
The present invention has been made in view of the above circumstances, and in the method of manufacturing a semiconductor device with a back surface protective film, when a film for forming a back surface protective film is attached to the back surface of a semiconductor substrate and then transported, the back surface protective film is conveyed. A composite for forming a back surface protective film capable of preventing contamination and deformation of the forming film, a method for producing a first laminate using the composite for forming a back surface protective film, a method for producing a third laminate, and back surface protection. An object of the present invention is to provide a method for manufacturing a semiconductor device with a film.
上記課題を解決するため、本発明は、以下の態様を有する。
[1]保護層と、裏面保護膜形成用フィルムとが積層されてなる裏面保護膜形成用複合体であって、半導体基板の裏面に、前記裏面保護膜形成用フィルムを貼付して、前記半導体基板と、前記裏面保護膜形成用フィルムと、前記保護層とがこの順に積層された第二積層体を得る第一の積層工程と、前記第二積層体の前記裏面保護膜形成用フィルムを硬化させて裏面保護膜とする硬化工程と、前記第一の積層工程から前記硬化工程に前記第二積層体を搬送する搬送工程とを含む、前記半導体基板と、前記裏面保護膜と、前記保護層とがこの順に積層された第一積層体の製造方法に用いられる、裏面保護膜形成用複合体。
[2]保護層と、裏面保護膜形成用フィルムとが積層されてなる裏面保護膜形成用複合体であって、半導体基板の裏面に、前記裏面保護膜形成用フィルムを貼付して、前記半導体基板と、前記裏面保護膜形成用フィルムと、前記保護層とがこの順に積層された第二積層体を得る第一の積層工程と、前記第二積層体の前記保護層に、支持シートを貼付して、前記半導体基板と、前記裏面保護膜形成用フィルムと、前記保護層と、前記支持シートとがこの順に積層された第三積層体を得る第二の積層工程と、前記第一の積層工程から前記第二の積層工程に前記第二積層体を搬送する搬送工程と、を含む第三積層体の製造方法に用いられる、裏面保護膜形成用複合体。
[3]半導体基板と、裏面保護膜と、保護層とがこの順に積層された第一積層体の製造方法であって、前記半導体基板の裏面に、[1]に記載の裏面保護膜形成用複合体の前記裏面保護膜形成用フィルムを貼付して、前記半導体基板と、前記裏面保護膜形成用フィルムと、前記保護層とがこの順に積層された第二積層体を得る第一の積層工程と、前記第二積層体の前記裏面保護膜形成用フィルムを硬化させて裏面保護膜とする硬化工程と、前記第一の積層工程から前記硬化工程に前記第二積層体を搬送する搬送工程とを含む、第一積層体の製造方法。
[4]半導体基板と、裏面保護膜形成用フィルムと、保護層と、支持シートとがこの順に積層された第三積層体の製造方法であって、前記半導体基板の裏面に、[2]に記載の裏面保護膜形成用複合体の前記裏面保護膜形成用フィルムを貼付して、前記半導体基板と、前記裏面保護膜形成用フィルムと、前記保護層とがこの順に積層された第二積層体を得る第一の積層工程と、前記第二積層体の前記保護層に、支持シートを貼付して、前記半導体基板と、前記裏面保護膜形成用フィルムと、前記保護層と、前記支持シートとがこの順に積層された第三積層体を得る第二の積層工程と、前記第一の積層工程から前記第二の積層工程に前記第二積層体を搬送する搬送工程とを含む、第三積層体の製造方法。
[5][3]に記載の製造方法で製造された第一積層体の前記保護層に、支持シートを貼付し、前記半導体基板と、前記裏面保護膜と、前記保護層と、前記支持シートとがこの順に積層された第四積層体を得る第二の積層工程と、前記第四積層体の、前記半導体基板及び前記裏面保護膜をダイシングして、裏面保護膜付き半導体装置とする工程と、前記裏面保護膜付き半導体装置を、前記支持シートからピックアップする工程とを含む、裏面保護膜付き半導体装置の製造方法。
[6][4]に記載の製造方法で製造された第三積層体の、前記裏面保護膜形成用フィルムを硬化させて裏面保護膜とし、前記半導体基板と、前記裏面保護膜と、前記保護層と、前記支持シートとがこの順に積層された第四積層体を得る硬化工程と、前記第四積層体の、前記半導体基板及び前記裏面保護膜をダイシングして、裏面保護膜付き半導体装置とする工程と、
前記裏面保護膜付き半導体装置を、前記支持シートからピックアップする工程とを含む、裏面保護膜付き半導体装置の製造方法。
[7][4]に記載の製造方法で製造された第三積層体の、前記半導体基板及び前記裏面保護膜形成用フィルムをダイシングして、裏面保護膜形成用フィルム付き半導体装置とする工程と、前記裏面保護膜形成用フィルムを硬化させて裏面保護膜とする硬化工程と、
前記裏面保護膜形成用フィルム付き半導体又は裏面保護膜付き半導体装置を、前記支持シートからピックアップする工程とを含む、裏面保護膜付き半導体装置の製造方法。 In order to solve the above problems, the present invention has the following aspects.
[1] A back surface protective film forming composite in which a protective layer and a back surface protective film forming film are laminated, and the back surface protective film forming film is attached to the back surface of a semiconductor substrate to form the semiconductor. The first laminating step of obtaining a second laminated body in which the substrate, the back surface protective film forming film, and the protective layer are laminated in this order, and the back surface protective film forming film of the second laminated body are cured. The semiconductor substrate, the back surface protective film, and the protective layer, which include a curing step of forming the back surface protective film and a transfer step of transporting the second laminate from the first lamination step to the curing step. A composite for forming a back surface protective film, which is used in a method for producing a first laminated body in which and are laminated in this order.
[2] A back surface protective film forming composite in which a protective layer and a back surface protective film forming film are laminated, and the back surface protective film forming film is attached to the back surface of a semiconductor substrate to form the semiconductor. A support sheet is attached to the first laminating step of obtaining a second laminated body in which the substrate, the back surface protective film forming film, and the protective layer are laminated in this order, and the protective layer of the second laminated body. Then, a second laminating step of obtaining a third laminated body in which the semiconductor substrate, the film for forming the back surface protective film, the protective layer, and the support sheet are laminated in this order, and the first laminating. A composite for forming a back surface protective film used in a method for producing a third laminate, which comprises a transport step of transporting the second laminate from a step to the second lamination step.
[3] A method for producing a first laminated body in which a semiconductor substrate, a back surface protective film, and a protective layer are laminated in this order, for forming a back surface protective film according to [1] on the back surface of the semiconductor substrate. A first laminating step of attaching the back surface protective film forming film of a composite to obtain a second laminate in which the semiconductor substrate, the back surface protective film forming film, and the protective layer are laminated in this order. A curing step of curing the back surface protective film forming film of the second laminated body to form a back surface protective film, and a transporting step of transporting the second laminated body from the first laminating step to the curing step. A method for producing a first laminated film, including.
[4] A method for manufacturing a third laminated body in which a semiconductor substrate, a film for forming a back surface protective film, a protective layer, and a support sheet are laminated in this order. A second laminate in which the semiconductor substrate, the back surface protective film forming film, and the protective layer are laminated in this order by attaching the back surface protective film forming film of the back surface protective film forming composite. A support sheet is attached to the protective layer of the second laminated body in the first laminating step of obtaining the semiconductor substrate, the back surface protective film forming film, the protective layer, and the support sheet. A third laminating step including a second laminating step of obtaining a third laminated body laminated in this order, and a transporting step of transporting the second laminated body from the first laminating step to the second laminating step. How to make a body.
[5] A support sheet is attached to the protective layer of the first laminate manufactured by the manufacturing method according to [3], and the semiconductor substrate, the back surface protective film, the protective layer, and the support sheet are attached. A second lamination step of obtaining a fourth laminate laminated in this order, and a step of dicing the semiconductor substrate and the back surface protective film of the fourth laminate to obtain a semiconductor device with a back surface protective film. A method for manufacturing a semiconductor device with a back surface protective film, which comprises a step of picking up the semiconductor device with a back surface protective film from the support sheet.
[6] The film for forming the back surface protective film of the third laminate produced by the production method according to [4] is cured to form a back surface protective film, and the semiconductor substrate, the back surface protective film, and the protection are obtained. A curing step of obtaining a fourth laminate in which the layers and the support sheet are laminated in this order, and dicing the semiconductor substrate and the back surface protective film of the fourth laminate to obtain a semiconductor device with a back surface protective film. And the process to do
A method for manufacturing a semiconductor device with a back surface protective film, which comprises a step of picking up the semiconductor device with a back surface protective film from the support sheet.
[7] A step of dicing the semiconductor substrate and the back surface protective film forming film of the third laminate manufactured by the production method according to [4] to obtain a semiconductor device with a back surface protective film forming film. , A curing step of curing the back surface protective film forming film to obtain a back surface protective film,
A method for manufacturing a semiconductor device with a back surface protective film, which comprises a step of picking up the semiconductor with a back surface protective film or a semiconductor device with a back surface protective film from the support sheet.
[1]保護層と、裏面保護膜形成用フィルムとが積層されてなる裏面保護膜形成用複合体であって、半導体基板の裏面に、前記裏面保護膜形成用フィルムを貼付して、前記半導体基板と、前記裏面保護膜形成用フィルムと、前記保護層とがこの順に積層された第二積層体を得る第一の積層工程と、前記第二積層体の前記裏面保護膜形成用フィルムを硬化させて裏面保護膜とする硬化工程と、前記第一の積層工程から前記硬化工程に前記第二積層体を搬送する搬送工程とを含む、前記半導体基板と、前記裏面保護膜と、前記保護層とがこの順に積層された第一積層体の製造方法に用いられる、裏面保護膜形成用複合体。
[2]保護層と、裏面保護膜形成用フィルムとが積層されてなる裏面保護膜形成用複合体であって、半導体基板の裏面に、前記裏面保護膜形成用フィルムを貼付して、前記半導体基板と、前記裏面保護膜形成用フィルムと、前記保護層とがこの順に積層された第二積層体を得る第一の積層工程と、前記第二積層体の前記保護層に、支持シートを貼付して、前記半導体基板と、前記裏面保護膜形成用フィルムと、前記保護層と、前記支持シートとがこの順に積層された第三積層体を得る第二の積層工程と、前記第一の積層工程から前記第二の積層工程に前記第二積層体を搬送する搬送工程と、を含む第三積層体の製造方法に用いられる、裏面保護膜形成用複合体。
[3]半導体基板と、裏面保護膜と、保護層とがこの順に積層された第一積層体の製造方法であって、前記半導体基板の裏面に、[1]に記載の裏面保護膜形成用複合体の前記裏面保護膜形成用フィルムを貼付して、前記半導体基板と、前記裏面保護膜形成用フィルムと、前記保護層とがこの順に積層された第二積層体を得る第一の積層工程と、前記第二積層体の前記裏面保護膜形成用フィルムを硬化させて裏面保護膜とする硬化工程と、前記第一の積層工程から前記硬化工程に前記第二積層体を搬送する搬送工程とを含む、第一積層体の製造方法。
[4]半導体基板と、裏面保護膜形成用フィルムと、保護層と、支持シートとがこの順に積層された第三積層体の製造方法であって、前記半導体基板の裏面に、[2]に記載の裏面保護膜形成用複合体の前記裏面保護膜形成用フィルムを貼付して、前記半導体基板と、前記裏面保護膜形成用フィルムと、前記保護層とがこの順に積層された第二積層体を得る第一の積層工程と、前記第二積層体の前記保護層に、支持シートを貼付して、前記半導体基板と、前記裏面保護膜形成用フィルムと、前記保護層と、前記支持シートとがこの順に積層された第三積層体を得る第二の積層工程と、前記第一の積層工程から前記第二の積層工程に前記第二積層体を搬送する搬送工程とを含む、第三積層体の製造方法。
[5][3]に記載の製造方法で製造された第一積層体の前記保護層に、支持シートを貼付し、前記半導体基板と、前記裏面保護膜と、前記保護層と、前記支持シートとがこの順に積層された第四積層体を得る第二の積層工程と、前記第四積層体の、前記半導体基板及び前記裏面保護膜をダイシングして、裏面保護膜付き半導体装置とする工程と、前記裏面保護膜付き半導体装置を、前記支持シートからピックアップする工程とを含む、裏面保護膜付き半導体装置の製造方法。
[6][4]に記載の製造方法で製造された第三積層体の、前記裏面保護膜形成用フィルムを硬化させて裏面保護膜とし、前記半導体基板と、前記裏面保護膜と、前記保護層と、前記支持シートとがこの順に積層された第四積層体を得る硬化工程と、前記第四積層体の、前記半導体基板及び前記裏面保護膜をダイシングして、裏面保護膜付き半導体装置とする工程と、
前記裏面保護膜付き半導体装置を、前記支持シートからピックアップする工程とを含む、裏面保護膜付き半導体装置の製造方法。
[7][4]に記載の製造方法で製造された第三積層体の、前記半導体基板及び前記裏面保護膜形成用フィルムをダイシングして、裏面保護膜形成用フィルム付き半導体装置とする工程と、前記裏面保護膜形成用フィルムを硬化させて裏面保護膜とする硬化工程と、
前記裏面保護膜形成用フィルム付き半導体又は裏面保護膜付き半導体装置を、前記支持シートからピックアップする工程とを含む、裏面保護膜付き半導体装置の製造方法。 In order to solve the above problems, the present invention has the following aspects.
[1] A back surface protective film forming composite in which a protective layer and a back surface protective film forming film are laminated, and the back surface protective film forming film is attached to the back surface of a semiconductor substrate to form the semiconductor. The first laminating step of obtaining a second laminated body in which the substrate, the back surface protective film forming film, and the protective layer are laminated in this order, and the back surface protective film forming film of the second laminated body are cured. The semiconductor substrate, the back surface protective film, and the protective layer, which include a curing step of forming the back surface protective film and a transfer step of transporting the second laminate from the first lamination step to the curing step. A composite for forming a back surface protective film, which is used in a method for producing a first laminated body in which and are laminated in this order.
[2] A back surface protective film forming composite in which a protective layer and a back surface protective film forming film are laminated, and the back surface protective film forming film is attached to the back surface of a semiconductor substrate to form the semiconductor. A support sheet is attached to the first laminating step of obtaining a second laminated body in which the substrate, the back surface protective film forming film, and the protective layer are laminated in this order, and the protective layer of the second laminated body. Then, a second laminating step of obtaining a third laminated body in which the semiconductor substrate, the film for forming the back surface protective film, the protective layer, and the support sheet are laminated in this order, and the first laminating. A composite for forming a back surface protective film used in a method for producing a third laminate, which comprises a transport step of transporting the second laminate from a step to the second lamination step.
[3] A method for producing a first laminated body in which a semiconductor substrate, a back surface protective film, and a protective layer are laminated in this order, for forming a back surface protective film according to [1] on the back surface of the semiconductor substrate. A first laminating step of attaching the back surface protective film forming film of a composite to obtain a second laminate in which the semiconductor substrate, the back surface protective film forming film, and the protective layer are laminated in this order. A curing step of curing the back surface protective film forming film of the second laminated body to form a back surface protective film, and a transporting step of transporting the second laminated body from the first laminating step to the curing step. A method for producing a first laminated film, including.
[4] A method for manufacturing a third laminated body in which a semiconductor substrate, a film for forming a back surface protective film, a protective layer, and a support sheet are laminated in this order. A second laminate in which the semiconductor substrate, the back surface protective film forming film, and the protective layer are laminated in this order by attaching the back surface protective film forming film of the back surface protective film forming composite. A support sheet is attached to the protective layer of the second laminated body in the first laminating step of obtaining the semiconductor substrate, the back surface protective film forming film, the protective layer, and the support sheet. A third laminating step including a second laminating step of obtaining a third laminated body laminated in this order, and a transporting step of transporting the second laminated body from the first laminating step to the second laminating step. How to make a body.
[5] A support sheet is attached to the protective layer of the first laminate manufactured by the manufacturing method according to [3], and the semiconductor substrate, the back surface protective film, the protective layer, and the support sheet are attached. A second lamination step of obtaining a fourth laminate laminated in this order, and a step of dicing the semiconductor substrate and the back surface protective film of the fourth laminate to obtain a semiconductor device with a back surface protective film. A method for manufacturing a semiconductor device with a back surface protective film, which comprises a step of picking up the semiconductor device with a back surface protective film from the support sheet.
[6] The film for forming the back surface protective film of the third laminate produced by the production method according to [4] is cured to form a back surface protective film, and the semiconductor substrate, the back surface protective film, and the protection are obtained. A curing step of obtaining a fourth laminate in which the layers and the support sheet are laminated in this order, and dicing the semiconductor substrate and the back surface protective film of the fourth laminate to obtain a semiconductor device with a back surface protective film. And the process to do
A method for manufacturing a semiconductor device with a back surface protective film, which comprises a step of picking up the semiconductor device with a back surface protective film from the support sheet.
[7] A step of dicing the semiconductor substrate and the back surface protective film forming film of the third laminate manufactured by the production method according to [4] to obtain a semiconductor device with a back surface protective film forming film. , A curing step of curing the back surface protective film forming film to obtain a back surface protective film,
A method for manufacturing a semiconductor device with a back surface protective film, which comprises a step of picking up the semiconductor with a back surface protective film or a semiconductor device with a back surface protective film from the support sheet.
[8][1]又は[2]に記載の裏面保護膜形成用複合体の裏面保護膜形成のための使用。
[9]前記裏面保護膜形成用フィルムが未硬化の硬化性樹脂組成物により形成され、前記保護層が硬化済の硬化性樹脂又は熱可塑性樹脂により形成されている、[1]又は[2]に記載の裏面保護膜形成用複合体、[3]~[7]のいずれかに記載の製造方法、又は[8]に記載の使用。 [8] Use for forming a back surface protective film of the back surface protective film forming complex according to [1] or [2].
[9] The film for forming the back surface protective film is formed of an uncured curable resin composition, and the protective layer is formed of a cured curable resin or a thermoplastic resin, [1] or [2]. The back surface protective film forming composite according to the above, the production method according to any one of [3] to [7], or the use according to [8].
[9]前記裏面保護膜形成用フィルムが未硬化の硬化性樹脂組成物により形成され、前記保護層が硬化済の硬化性樹脂又は熱可塑性樹脂により形成されている、[1]又は[2]に記載の裏面保護膜形成用複合体、[3]~[7]のいずれかに記載の製造方法、又は[8]に記載の使用。 [8] Use for forming a back surface protective film of the back surface protective film forming complex according to [1] or [2].
[9] The film for forming the back surface protective film is formed of an uncured curable resin composition, and the protective layer is formed of a cured curable resin or a thermoplastic resin, [1] or [2]. The back surface protective film forming composite according to the above, the production method according to any one of [3] to [7], or the use according to [8].
本発明によれば、裏面保護膜付き半導体装置の製造方法において、裏面保護膜形成用フィルムをワークの裏面に貼付した後に搬送する場合において、前記裏面保護膜形成用フィルムの汚染及び変形を防止可能な、裏面保護膜形成用複合体、前記裏面保護膜形成用複合体を使用した第一積層体の製造方法、第三積層体の製造方法、及び裏面保護膜付き半導体装置の製造方法が提供される。
According to the present invention, in the method for manufacturing a semiconductor device with a back surface protective film, it is possible to prevent contamination and deformation of the back surface protective film forming film when the film for forming the back surface protective film is attached to the back surface of the work and then transported. A method for producing a back surface protective film, a method for producing a first laminate using the back surface protective film forming composite, a method for producing a third laminate, and a method for producing a semiconductor device with a back surface protective film are provided. NS.
図2は、本発明の裏面保護膜形成用複合体の一実施形態を模式的に示す断面図である。
図3は、本発明の裏面保護膜形成用複合体の他の実施形態を模式的に示す断面図である。
なお、以下の説明で用いる図面は、特徴をわかりやすくするために、便宜上特徴となる部分を拡大して示している場合があり、各構成要素の寸法比率などが実際と同じであるとは限らない。 FIG. 2 is a cross-sectional view schematically showing an embodiment of the back surface protective film forming complex of the present invention.
FIG. 3 is a cross-sectional view schematically showing another embodiment of the back surface protective film forming complex of the present invention.
In addition, in the drawings used in the following description, in order to make the features easy to understand, the featured parts may be enlarged for convenience, and the dimensional ratio of each component may not be the same as the actual one. No.
図3は、本発明の裏面保護膜形成用複合体の他の実施形態を模式的に示す断面図である。
なお、以下の説明で用いる図面は、特徴をわかりやすくするために、便宜上特徴となる部分を拡大して示している場合があり、各構成要素の寸法比率などが実際と同じであるとは限らない。 FIG. 2 is a cross-sectional view schematically showing an embodiment of the back surface protective film forming complex of the present invention.
FIG. 3 is a cross-sectional view schematically showing another embodiment of the back surface protective film forming complex of the present invention.
In addition, in the drawings used in the following description, in order to make the features easy to understand, the featured parts may be enlarged for convenience, and the dimensional ratio of each component may not be the same as the actual one. No.
図2に示す裏面保護膜形成用複合体1は、保護層12と、裏面保護膜形成用フィルム13とをこの順に有する。
The back surface protective film forming composite 1 shown in FIG. 2 has a protective layer 12 and a back surface protective film forming film 13 in this order.
本実施形態の裏面保護膜形成用複合体1は、ワークの裏面に、裏面保護膜形成用フィルム13を貼付して、前記ワークと、裏面保護膜形成用フィルム13と、保護層12とがこの順に積層された第二積層体を得る第一の積層工程と、前記第二積層体の保護層12に、支持シートを貼付して、前記ワークと、裏面保護膜形成用フィルム13と、保護層12と、前記支持シートとがこの順に積層された第三積層体を得る第二の積層工程と、前記第一の積層工程から前記第二の積層工程に前記第二積層体を搬送する搬送工程とを含む前記第三積層体の製造方法に用いられる。本実施形態の裏面保護膜形成用複合体1は、保護層12を有することにより、前記搬送工程における(硬化前の)裏面保護膜形成用フィルム13の汚染及び変形を防止することができる。
In the back surface protective film forming composite 1 of the present embodiment, the back surface protective film forming film 13 is attached to the back surface of the work, and the work, the back surface protective film forming film 13, and the protective layer 12 are formed therein. In the first laminating step of obtaining the second laminated body laminated in order, the support sheet is attached to the protective layer 12 of the second laminated body, and the work, the back surface protective film forming film 13, and the protective layer are attached. A second laminating step of obtaining a third laminated body in which the 12 and the support sheet are laminated in this order, and a transport step of transporting the second laminating body from the first laminating step to the second laminating step. It is used in the method for producing the third laminated body including. By having the protective layer 12 in the back surface protective film forming composite 1 of the present embodiment, it is possible to prevent contamination and deformation of the back surface protective film forming film 13 (before curing) in the transport step.
また、本実施形態の裏面保護膜形成用複合体1は、ワークの裏面に、裏面保護膜形成用フィルム13を貼付して、前記ワークと、裏面保護膜形成用フィルム13と、保護層12とがこの順に積層された第二積層体を得る第一の積層工程と、前記第二積層体の裏面保護膜形成用フィルム13を硬化させて裏面保護膜とする硬化工程と、前記第一の積層工程から前記硬化工程に前記第二積層体を搬送する搬送工程とを含む、前記ワークと、裏面保護膜と、保護層12とがこの順に積層された第一積層体の製造方法に用いられる。本実施形態の裏面保護膜形成用複合体1は、保護層12を有することにより、前記搬送工程における(硬化前の)裏面保護膜形成用フィルム13の汚染及び変形を防止することができる。
Further, in the back surface protective film forming composite 1 of the present embodiment, the back surface protective film forming film 13 is attached to the back surface of the work, and the work, the back surface protective film forming film 13, and the protective layer 12 are attached. A first laminating step of obtaining a second laminated body laminated in this order, a curing step of curing the back surface protective film forming film 13 of the second laminated body to form a back surface protective film, and the first laminating. It is used in a method for producing a first laminated body in which the work, a back surface protective film, and a protective layer 12 are laminated in this order, which includes a transporting step of transporting the second laminated body from a step to the curing step. By having the protective layer 12 in the back surface protective film forming composite 1 of the present embodiment, it is possible to prevent contamination and deformation of the back surface protective film forming film 13 (before curing) in the transport step.
図3に示す裏面保護膜形成用複合体2は、剥離フィルム151と、保護層12と、裏面保護膜形成用フィルム13とをこの順に有する。
The back surface protective film forming composite 2 shown in FIG. 3 has a release film 151, a protective layer 12, and a back surface protective film forming film 13 in this order.
本実施形態の裏面保護膜形成用複合体2は、ワークの裏面に、裏面保護膜形成用フィルム13を貼付して、前記ワークと、裏面保護膜形成用フィルム13と、保護層12と、剥離フィルム151とがこの順に積層された第五積層体を得る第一の積層工程と、前記第五積層体から剥離フィルム151を剥離して得られた前記第二積層体の保護層12に、支持シートを貼付して、前記第三積層体を得る第二の積層工程と、前記第一の積層工程から前記第二の積層工程に前記第二積層体を搬送する搬送工程とを含む前記第三積層体の製造方法に用いられる。本実施形態の裏面保護膜形成用複合体2は、保護層12を有することにより、前記搬送工程における(硬化前の)裏面保護膜形成用フィルム13の汚染及び変形を防止することができる。
In the back surface protective film forming composite 2 of the present embodiment, the back surface protective film forming film 13 is attached to the back surface of the work, and the work, the back surface protective film forming film 13, and the protective layer 12 are peeled off. It is supported by the first laminating step of obtaining a fifth laminated body in which the film 151 is laminated in this order, and the protective layer 12 of the second laminated body obtained by peeling the release film 151 from the fifth laminated body. The third including a second laminating step of attaching a sheet to obtain the third laminated body and a transporting step of transporting the second laminated body from the first laminating step to the second laminating step. It is used in a method for manufacturing a laminate. By having the protective layer 12 in the back surface protective film forming composite 2 of the present embodiment, it is possible to prevent contamination and deformation of the back surface protective film forming film 13 (before curing) in the transport step.
また、本実施形態の裏面保護膜形成用複合体2は、ワークの裏面に、裏面保護膜形成用フィルム13を貼付して、前記ワークと、裏面保護膜形成用フィルム13と、保護層12と、剥離フィルム151とがこの順に積層された第五積層体を得る第一の積層工程と、前記第五積層体から剥離フィルム151を剥離して得られた前記第二積層体の裏面保護膜形成用フィルム13を硬化させて裏面保護膜とする硬化工程と、前記第一の積層工程から前記硬化工程に前記第二積層体を搬送する搬送工程とを含む、前記第一積層体の製造方法に用いられる。本実施形態の裏面保護膜形成用複合体2は、保護層12を有することにより、前記搬送工程における(硬化前の)裏面保護膜形成用フィルム13の汚染及び変形を防止することができる。
Further, in the back surface protective film forming composite 2 of the present embodiment, the back surface protective film forming film 13 is attached to the back surface of the work, and the work, the back surface protective film forming film 13, and the protective layer 12 are attached. The first laminating step of obtaining a fifth laminated body in which the release film 151 is laminated in this order, and the formation of a back surface protective film of the second laminated body obtained by peeling the release film 151 from the fifth laminated body. A method for producing the first laminate, which comprises a curing step of curing the film 13 to form a back surface protective film and a transport step of transporting the second laminate from the first lamination step to the curing step. Used. By having the protective layer 12 in the back surface protective film forming composite 2 of the present embodiment, it is possible to prevent contamination and deformation of the back surface protective film forming film 13 (before curing) in the transport step.
本実施形態の裏面保護膜形成用複合体1及び裏面保護膜形成用複合体2は、少なくとも、前記第一の積層工程から前記第二の積層工程までの間を、裏面保護膜形成用フィルムを貼付する装置と支持シートを貼付する装置を連結して行う、又は同一の装置で行う前記第三積層体の製造方法に特に好ましく用いられる。
The back surface protective film forming complex 1 and the back surface protective film forming complex 2 of the present embodiment have at least a back surface protective film forming film during the period from the first laminating step to the second laminating step. It is particularly preferably used in the method for producing the third laminated body, which is carried out by connecting the sticking device and the sticking device of the support sheet, or by using the same device.
また、本実施形態の裏面保護膜形成用複合体1及び裏面保護膜形成用複合体2は、少なくとも前記第一の積層工程から前記硬化工程までの間を、裏面保護膜形成用フィルムを貼付する装置と裏面保護膜形成用フィルムを硬化させる装置を連結して行う、又は同一の装置で行う第一積層体の製造方法に好ましく用いられる。
Further, on the back surface protective film forming composite 1 and the back surface protective film forming composite 2 of the present embodiment, the back surface protective film forming film is attached at least between the first laminating step and the curing step. It is preferably used in a method for producing a first laminate, which is carried out by connecting an apparatus and an apparatus for curing a film for forming a back surface protective film, or by using the same apparatus.
裏面保護膜形成用複合体1の厚さは特に限定されないが、30~550μmであることが好ましく、35~450μmであることがより好ましく、40~400μmであることがさらに好ましい。裏面保護膜形成用複合体1の厚さが上記下限値以上であると、裏面保護膜の強度を高められる。裏面保護膜形成用複合体1の厚さが上記上限値以下であると、裏面保護膜をダイシングしやすい。
裏面保護膜形成用複合体2の厚さは特に限定されないが、30~550μmであることが好ましく、35~450μmであることがより好ましく、40~400μmであることがさらに好ましい。裏面保護膜形成用複合体2の厚さが上記下限値以上であると、裏面保護膜の強度を高められる。裏面保護膜形成用複合体2の厚さが上記上限値以下であると、裏面保護膜をダイシングしやすい。 The thickness of the back surface protective film forming complex 1 is not particularly limited, but is preferably 30 to 550 μm, more preferably 35 to 450 μm, and even more preferably 40 to 400 μm. When the thickness of the back surface protective film forming complex 1 is at least the above lower limit value, the strength of the back surface protective film can be increased. When the thickness of the back surface protective film forming complex 1 is not more than the above upper limit value, the back surface protective film is easily diced.
The thickness of the back surface protective film forming complex 2 is not particularly limited, but is preferably 30 to 550 μm, more preferably 35 to 450 μm, and even more preferably 40 to 400 μm. When the thickness of the back surface protective film forming composite 2 is at least the above lower limit value, the strength of the back surface protective film can be increased. When the thickness of the back surface protective film forming complex 2 is not more than the above upper limit value, the back surface protective film is easily diced.
裏面保護膜形成用複合体2の厚さは特に限定されないが、30~550μmであることが好ましく、35~450μmであることがより好ましく、40~400μmであることがさらに好ましい。裏面保護膜形成用複合体2の厚さが上記下限値以上であると、裏面保護膜の強度を高められる。裏面保護膜形成用複合体2の厚さが上記上限値以下であると、裏面保護膜をダイシングしやすい。 The thickness of the back surface protective film forming complex 1 is not particularly limited, but is preferably 30 to 550 μm, more preferably 35 to 450 μm, and even more preferably 40 to 400 μm. When the thickness of the back surface protective film forming complex 1 is at least the above lower limit value, the strength of the back surface protective film can be increased. When the thickness of the back surface protective film forming complex 1 is not more than the above upper limit value, the back surface protective film is easily diced.
The thickness of the back surface protective film forming complex 2 is not particularly limited, but is preferably 30 to 550 μm, more preferably 35 to 450 μm, and even more preferably 40 to 400 μm. When the thickness of the back surface protective film forming composite 2 is at least the above lower limit value, the strength of the back surface protective film can be increased. When the thickness of the back surface protective film forming complex 2 is not more than the above upper limit value, the back surface protective film is easily diced.
次に、本実施形態の裏面保護膜形成用複合体を構成する各層について説明する。
Next, each layer constituting the back surface protective film forming complex of the present embodiment will be described.
〇裏面保護膜形成用フィルム
本実施形態の裏面保護膜形成用複合体において、裏面保護膜形成用フィルムは、ウエハ(すなわち、ワーク)に貼付され、硬化することにより、ウエハの裏面保護膜として用いられる。裏面保護膜形成用フィルムは硬化性を有し、エネルギー硬化性フィルムでも、熱硬化性フィルムでもよい。 〇 Film for forming a back surface protective film In the back surface protective film forming composite of the present embodiment, the back surface protective film forming film is used as a back surface protective film of a wafer by being attached to a wafer (that is, a work) and cured. Be done. The back surface protective film forming film has curability and may be an energy curable film or a thermosetting film.
本実施形態の裏面保護膜形成用複合体において、裏面保護膜形成用フィルムは、ウエハ(すなわち、ワーク)に貼付され、硬化することにより、ウエハの裏面保護膜として用いられる。裏面保護膜形成用フィルムは硬化性を有し、エネルギー硬化性フィルムでも、熱硬化性フィルムでもよい。 〇 Film for forming a back surface protective film In the back surface protective film forming composite of the present embodiment, the back surface protective film forming film is used as a back surface protective film of a wafer by being attached to a wafer (that is, a work) and cured. Be done. The back surface protective film forming film has curability and may be an energy curable film or a thermosetting film.
本明細書において、「エネルギー硬化性」とは、エネルギー線を照射することにより硬化する性質を意味し、「熱硬化性」とは、熱を加えることにより硬化する性質を意味する。
In the present specification, "energy curable" means a property of being cured by irradiating with energy rays, and "thermosetting" means a property of being cured by applying heat.
本明細書において、「エネルギー線」とは、電磁波又は荷電粒子線の中でエネルギー量子を有するものを意味する。エネルギー線の例としては、紫外線、放射線、電子線等が挙げられる。紫外線は、例えば、紫外線源として高圧水銀ランプ、ヒュージョンランプ、キセノンランプ、ブラックライト又はLEDランプ等を用いることで照射できる。電子線は、電子線加速器等によって発生させたものを照射できる。
In the present specification, the "energy ray" means an electromagnetic wave or a charged particle beam having an energy quantum. Examples of energy rays include ultraviolet rays, radiation, electron beams and the like. Ultraviolet rays can be irradiated by using, for example, a high-pressure mercury lamp, a fusion lamp, a xenon lamp, a black light, an LED lamp, or the like as an ultraviolet source. The electron beam can be irradiated with an electron beam generated by an electron beam accelerator or the like.
裏面保護膜形成用フィルムの厚さは特に限定されないが、3~300μmであることが好ましく、5~250μmであることがより好ましく、7~200μmであることがさらに好ましい。裏面保護膜形成用フィルムの厚さが上記下限値以上であると、裏面保護膜の強度をより高められる。裏面保護膜形成用フィルムの厚さが上記上限値以下であると、裏面保護膜をダイシングしやすい。
The thickness of the back surface protective film forming film is not particularly limited, but is preferably 3 to 300 μm, more preferably 5 to 250 μm, and even more preferably 7 to 200 μm. When the thickness of the back surface protective film forming film is at least the above lower limit value, the strength of the back surface protective film can be further increased. When the thickness of the back surface protective film forming film is not more than the above upper limit value, the back surface protective film is easily diced.
(裏面保護膜形成用組成物)
裏面保護膜形成用フィルムを形成するための裏面保護膜形成用組成物の組成としては、バインダーポリマー成分及び硬化性成分を含有することが好ましい。すなわち、裏面保護膜形成用組成物は(未硬化の)硬化性樹脂組成物であり、裏面保護膜形成用フィルムはそのような硬化性樹脂組成物により形成されていることが好ましい。 (Composition for forming a back surface protective film)
The composition of the back surface protective film forming composition for forming the back surface protective film forming film preferably contains a binder polymer component and a curable component. That is, it is preferable that the back surface protective film forming composition is a (uncured) curable resin composition, and the back surface protective film forming film is formed of such a curable resin composition.
裏面保護膜形成用フィルムを形成するための裏面保護膜形成用組成物の組成としては、バインダーポリマー成分及び硬化性成分を含有することが好ましい。すなわち、裏面保護膜形成用組成物は(未硬化の)硬化性樹脂組成物であり、裏面保護膜形成用フィルムはそのような硬化性樹脂組成物により形成されていることが好ましい。 (Composition for forming a back surface protective film)
The composition of the back surface protective film forming composition for forming the back surface protective film forming film preferably contains a binder polymer component and a curable component. That is, it is preferable that the back surface protective film forming composition is a (uncured) curable resin composition, and the back surface protective film forming film is formed of such a curable resin composition.
(バインダーポリマー成分)
裏面保護膜形成用フィルムに十分な接着性及び造膜性(シート形成性)を付与するためにバインダーポリマー成分が用いられる。バインダーポリマー成分としては、従来公知のアクリルポリマー、ポリエステル樹脂、ウレタン樹脂、アクリルウレタン樹脂、シリコーン樹脂、ゴム系ポリマー等を用いることができる。 (Binder polymer component)
A binder polymer component is used to impart sufficient adhesiveness and film-forming property (sheet forming property) to the back surface protective film forming film. As the binder polymer component, conventionally known acrylic polymers, polyester resins, urethane resins, acrylic urethane resins, silicone resins, rubber-based polymers and the like can be used.
裏面保護膜形成用フィルムに十分な接着性及び造膜性(シート形成性)を付与するためにバインダーポリマー成分が用いられる。バインダーポリマー成分としては、従来公知のアクリルポリマー、ポリエステル樹脂、ウレタン樹脂、アクリルウレタン樹脂、シリコーン樹脂、ゴム系ポリマー等を用いることができる。 (Binder polymer component)
A binder polymer component is used to impart sufficient adhesiveness and film-forming property (sheet forming property) to the back surface protective film forming film. As the binder polymer component, conventionally known acrylic polymers, polyester resins, urethane resins, acrylic urethane resins, silicone resins, rubber-based polymers and the like can be used.
バインダーポリマー成分の重量平均分子量(Mw)は、1万~200万であることが好ましく、10万~120万であることがより好ましい。バインダーポリマー成分の重量平均分子量が低過ぎると裏面保護膜形成用フィルムと支持シートとの粘着力が高くなり、裏面保護膜形成用フィルムの転写不良が起こることがあり、高過ぎると裏面保護膜形成用フィルムの接着性が低下し、チップ等に転写できなくなったり、あるいは転写後にチップ等から裏面保護膜が剥離することがある。すなわち、バインダーポリマー成分の重量平均分子量が上記下限値以上であると、裏面保護膜形成用フィルムと支持シートとの粘着力が高くなり、裏面保護膜形成用フィルムの転写不良が起こることを抑制できる。バインダーポリマー成分の重量平均分子量が上記上限値以下であると、裏面保護膜形成用フィルムの接着性が低下し、チップ等に転写できなくなることを抑制できる。加えて、バインダーポリマー成分の重量平均分子量が上記上限値以下であると、転写後にチップ等から裏面保護膜が剥離することを抑制できる。
なお、本明細書において、「重量平均分子量」とは、特に断りのない限り、ゲルパーミエーションクロマトグラフィー(GPC)により測定される標準ポリスチレン換算の重量平均分子量である。 The weight average molecular weight (Mw) of the binder polymer component is preferably 10,000 to 2 million, more preferably 100,000 to 1.2 million. If the weight average molecular weight of the binder polymer component is too low, the adhesive force between the back surface protective film forming film and the support sheet becomes high, and transfer failure of the back surface protective film forming film may occur. If it is too high, the back surface protective film is formed. The adhesiveness of the film for use may deteriorate and transfer to a chip or the like may not be possible, or the back surface protective film may peel off from the chip or the like after transfer. That is, when the weight average molecular weight of the binder polymer component is at least the above lower limit value, the adhesive strength between the back surface protective film forming film and the support sheet becomes high, and it is possible to suppress the occurrence of transfer failure of the back surface protective film forming film. .. When the weight average molecular weight of the binder polymer component is not more than the above upper limit value, the adhesiveness of the back surface protective film forming film is lowered, and it is possible to prevent the binder polymer component from being unable to be transferred to a chip or the like. In addition, when the weight average molecular weight of the binder polymer component is not more than the above upper limit value, it is possible to prevent the back surface protective film from peeling off from the chip or the like after transfer.
In the present specification, the "weight average molecular weight" is a standard polystyrene-equivalent weight average molecular weight measured by gel permeation chromatography (GPC) unless otherwise specified.
なお、本明細書において、「重量平均分子量」とは、特に断りのない限り、ゲルパーミエーションクロマトグラフィー(GPC)により測定される標準ポリスチレン換算の重量平均分子量である。 The weight average molecular weight (Mw) of the binder polymer component is preferably 10,000 to 2 million, more preferably 100,000 to 1.2 million. If the weight average molecular weight of the binder polymer component is too low, the adhesive force between the back surface protective film forming film and the support sheet becomes high, and transfer failure of the back surface protective film forming film may occur. If it is too high, the back surface protective film is formed. The adhesiveness of the film for use may deteriorate and transfer to a chip or the like may not be possible, or the back surface protective film may peel off from the chip or the like after transfer. That is, when the weight average molecular weight of the binder polymer component is at least the above lower limit value, the adhesive strength between the back surface protective film forming film and the support sheet becomes high, and it is possible to suppress the occurrence of transfer failure of the back surface protective film forming film. .. When the weight average molecular weight of the binder polymer component is not more than the above upper limit value, the adhesiveness of the back surface protective film forming film is lowered, and it is possible to prevent the binder polymer component from being unable to be transferred to a chip or the like. In addition, when the weight average molecular weight of the binder polymer component is not more than the above upper limit value, it is possible to prevent the back surface protective film from peeling off from the chip or the like after transfer.
In the present specification, the "weight average molecular weight" is a standard polystyrene-equivalent weight average molecular weight measured by gel permeation chromatography (GPC) unless otherwise specified.
バインダーポリマー成分として、アクリルポリマーが好ましく用いられる。アクリルポリマーのガラス転移温度(Tg)は、好ましくは-60~50℃、さらに好ましくは-50~40℃、特に好ましくは-40~30℃の範囲にある。アクリルポリマーのガラス転移温度が低過ぎると裏面保護膜形成用フィルムと支持シートとの剥離力が大きくなって裏面保護膜形成用フィルムの転写不良が起こることがあり、高過ぎると裏面保護膜形成用フィルムの接着性が低下し、チップ等に転写できなくなったり、あるいは転写後にチップ等から裏面保護膜が剥離することがある。すなわち、アクリルポリマーのガラス転移温度が上記下限値以上であると、裏面保護膜形成用フィルムと支持シートとの剥離力が大きくなって裏面保護膜形成用フィルムの転写不良が起こることを抑制できる。アクリルポリマーのガラス転移温度が上記上限値以下であると、裏面保護膜形成用フィルムの接着性が低下し、チップ等に転写できなくなることを抑制できる。加えて、アクリルポリマーのガラス転移温度が上記上限値以下であると、転写後にチップ等から裏面保護膜が剥離することを抑制できる。
アクリルポリマーのガラス転移温度は、例えば、示差走査熱量測定(DSC)により求められる。 As the binder polymer component, an acrylic polymer is preferably used. The glass transition temperature (Tg) of the acrylic polymer is preferably in the range of −60 to 50 ° C., more preferably −50 to 40 ° C., and particularly preferably −40 to 30 ° C. If the glass transition temperature of the acrylic polymer is too low, the peeling force between the back surface protective film forming film and the support sheet may increase, causing transfer failure of the back surface protective film forming film. If it is too high, the back surface protective film forming film may occur. The adhesiveness of the film may be reduced and transfer to a chip or the like may not be possible, or the back surface protective film may be peeled off from the chip or the like after transfer. That is, when the glass transition temperature of the acrylic polymer is at least the above lower limit value, the peeling force between the back surface protective film forming film and the support sheet becomes large, and it is possible to suppress the occurrence of transfer failure of the back surface protective film forming film. When the glass transition temperature of the acrylic polymer is not more than the above upper limit value, the adhesiveness of the back surface protective film forming film is lowered, and it is possible to suppress that the acrylic polymer cannot be transferred to a chip or the like. In addition, when the glass transition temperature of the acrylic polymer is not more than the above upper limit value, it is possible to prevent the back surface protective film from peeling off from the chip or the like after transfer.
The glass transition temperature of the acrylic polymer is determined, for example, by differential scanning calorimetry (DSC).
アクリルポリマーのガラス転移温度は、例えば、示差走査熱量測定(DSC)により求められる。 As the binder polymer component, an acrylic polymer is preferably used. The glass transition temperature (Tg) of the acrylic polymer is preferably in the range of −60 to 50 ° C., more preferably −50 to 40 ° C., and particularly preferably −40 to 30 ° C. If the glass transition temperature of the acrylic polymer is too low, the peeling force between the back surface protective film forming film and the support sheet may increase, causing transfer failure of the back surface protective film forming film. If it is too high, the back surface protective film forming film may occur. The adhesiveness of the film may be reduced and transfer to a chip or the like may not be possible, or the back surface protective film may be peeled off from the chip or the like after transfer. That is, when the glass transition temperature of the acrylic polymer is at least the above lower limit value, the peeling force between the back surface protective film forming film and the support sheet becomes large, and it is possible to suppress the occurrence of transfer failure of the back surface protective film forming film. When the glass transition temperature of the acrylic polymer is not more than the above upper limit value, the adhesiveness of the back surface protective film forming film is lowered, and it is possible to suppress that the acrylic polymer cannot be transferred to a chip or the like. In addition, when the glass transition temperature of the acrylic polymer is not more than the above upper limit value, it is possible to prevent the back surface protective film from peeling off from the chip or the like after transfer.
The glass transition temperature of the acrylic polymer is determined, for example, by differential scanning calorimetry (DSC).
上記アクリルポリマーを構成するモノマーとしては、(メタ)アクリル酸エステルモノマー又はその誘導体が挙げられる。例えば、アルキル基の炭素数が1~18であるアルキル(メタ)アクリレート、具体的にはメチル(メタ)アクリレート、エチル(メタ)アクリレート、プロピル(メタ)アクリレート、ブチル(メタ)アクリレート、2-エチルヘキシル(メタ)アクリレートなどが挙げられる。また、環状骨格を有する(メタ)アクリレート、具体的にはシクロヘキシル(メタ)アクリレート、ベンジル(メタ)アクリレート、イソボルニル(メタ)アクリレート、ジシクロペンタニル(メタ)アクリレート、ジシクロペンテニル(メタ)アクリレート、ジシクロペンテニルオキシエチル(メタ)アクリレート、イミド(メタ)アクリレートなどが挙げられる。さらに官能基を有するモノマーとして、水酸基を有するヒドロキシメチル(メタ)アクリレート、2-ヒドロキシエチル(メタ)アクリレート、2-ヒドロキシプロピル(メタ)アクリレートなどが挙げられ;その他、エポキシ基を有するグリシジル(メタ)アクリレートなどが挙げられる。アクリルポリマーは、水酸基を有しているモノマーを含有しているアクリルポリマーが、後述する硬化性成分との相溶性が良いため好ましい。また、上記アクリルポリマーは、アクリル酸、メタクリル酸、イタコン酸、酢酸ビニル、アクリロニトリル、スチレンなどが共重合されていてもよい。
Examples of the monomer constituting the acrylic polymer include a (meth) acrylic acid ester monomer or a derivative thereof. For example, alkyl (meth) acrylates having an alkyl group having 1 to 18 carbon atoms, specifically methyl (meth) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, butyl (meth) acrylate, 2-ethylhexyl. Examples include (meth) acrylate. Further, a (meth) acrylate having a cyclic skeleton, specifically, cyclohexyl (meth) acrylate, benzyl (meth) acrylate, isobornyl (meth) acrylate, dicyclopentanyl (meth) acrylate, dicyclopentenyl (meth) acrylate, Examples thereof include dicyclopentenyloxyethyl (meth) acrylate and imide (meth) acrylate. Further, examples of the monomer having a functional group include hydroxymethyl (meth) acrylate having a hydroxyl group, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate and the like; and glycidyl (meth) having an epoxy group. Examples include acrylate. As the acrylic polymer, an acrylic polymer containing a monomer having a hydroxyl group is preferable because it has good compatibility with a curable component described later. Further, the acrylic polymer may be copolymerized with acrylic acid, methacrylic acid, itaconic acid, vinyl acetate, acrylonitrile, styrene and the like.
なお、本明細書において、「(メタ)アクリル酸」とは、「アクリル酸」及び「メタクリル酸」の両方を包含する概念とする。(メタ)アクリル酸と類似の用語につても同様であり、例えば、「(メタ)アクリレート」とは、「アクリレート」及び「メタクリレート」の両方を包含する概念であり、「(メタ)アクリロイル基」とは、「アクリロイル基」及び「メタクリロイル基」の両方を包含する概念である。
In addition, in this specification, "(meth) acrylic acid" is a concept including both "acrylic acid" and "methacrylic acid". The same applies to terms similar to (meth) acrylic acid, for example, "(meth) acrylate" is a concept that includes both "acrylate" and "methacrylate", and is a "(meth) acryloyl group". Is a concept that includes both an "acryloyl group" and a "methacryloyl group".
さらに、バインダーポリマー成分として、硬化後の裏面保護膜の可とう性を保持するための熱可塑性樹脂を配合してもよい。そのような熱可塑性樹脂としては、重量平均分子量が1000~10万のものが好ましく、3000~8万のものがさらに好ましい。熱可塑性樹脂のガラス転移温度は、好ましくは-30~120℃、さらに好ましくは-20~120℃のものが好ましい。熱可塑性樹脂としては、ポリエステル樹脂、熱可塑性ウレタン樹脂、フェノキシ樹脂、ポリブテン、ポリブタジエン、ポリスチレンなどが挙げられる。これらの熱可塑性樹脂は、1種単独で、又は2種以上混合して使用することができる。上記の熱可塑性樹脂を含有することにより、裏面保護膜形成用フィルムの転写面に裏面保護膜形成用フィルムが追従しボイドなどの発生を抑えることができる。
Further, as a binder polymer component, a thermoplastic resin for maintaining the flexibility of the back surface protective film after curing may be blended. As such a thermoplastic resin, one having a weight average molecular weight of 1,000 to 100,000 is preferable, and one having a weight average molecular weight of 3,000 to 80,000 is more preferable. The glass transition temperature of the thermoplastic resin is preferably −30 to 120 ° C., more preferably −20 to 120 ° C. Examples of the thermoplastic resin include polyester resin, thermoplastic urethane resin, phenoxy resin, polybutene, polybutadiene, polystyrene and the like. These thermoplastic resins can be used alone or in admixture of two or more. By containing the above-mentioned thermoplastic resin, the back surface protective film forming film follows the transfer surface of the back surface protective film forming film, and the generation of voids and the like can be suppressed.
(硬化性成分)
硬化性成分として、熱硬化性成分及びエネルギー線硬化性成分から選ばれる1種以上が用いられる。 (Curable component)
As the curable component, one or more selected from a thermosetting component and an energy ray curable component is used.
硬化性成分として、熱硬化性成分及びエネルギー線硬化性成分から選ばれる1種以上が用いられる。 (Curable component)
As the curable component, one or more selected from a thermosetting component and an energy ray curable component is used.
熱硬化性成分としては、熱硬化性樹脂及び熱硬化剤が用いられる。熱硬化性樹脂としては、たとえば、エポキシ樹脂が好ましい。
As the thermosetting component, a thermosetting resin and a thermosetting agent are used. As the thermosetting resin, for example, an epoxy resin is preferable.
エポキシ樹脂としては、従来公知のエポキシ樹脂を用いることができる。エポキシ樹脂としては、具体的には、多官能系エポキシ樹脂や、ビフェニル化合物、ビスフェノールAジグリシジルエーテルやその水添物、オルソクレゾールノボラックエポキシ樹脂、ジシクロペンタジエン型エポキシ樹脂、ビフェニル型エポキシ樹脂、ビスフェノールA型エポキシ樹脂、ビスフェノールF型エポキシ樹脂、フェニレン骨格型エポキシ樹脂など、分子中に2官能以上有するエポキシ化合物が挙げられる。これらは1種単独で、又は2種以上を組み合わせて用いることができる。
As the epoxy resin, a conventionally known epoxy resin can be used. Specific examples of the epoxy resin include polyfunctional epoxy resin, biphenyl compound, bisphenol A diglycidyl ether and its hydrogenated product, orthocresol novolac epoxy resin, dicyclopentadiene type epoxy resin, biphenyl type epoxy resin, and bisphenol. Examples thereof include epoxy compounds having bifunctionality or higher in the molecule, such as A-type epoxy resin, bisphenol F-type epoxy resin, and phenylene skeleton-type epoxy resin. These can be used alone or in combination of two or more.
裏面保護膜形成用フィルムには、バインダーポリマー成分100質量部に対して、熱硬化性樹脂が、好ましくは1~1000質量部、より好ましくは10~500質量部、特に好ましくは20~200質量部含まれる。熱硬化性樹脂の含有量が1質量部未満であると十分な接着性が得られないことがあり、1000質量部を超えると裏面保護膜形成用フィルムと粘着シート又は基材フィルムとの剥離力が高くなり、裏面保護膜形成用フィルムの転写不良が起こることがある。すなわち、熱硬化性樹脂の含有量が上記下限値以上であると、十分な接着性が得られる。熱硬化性樹脂の含有量が上記上限値以下であると、裏面保護膜形成用フィルムと粘着シート又は基材フィルムとの剥離力が高くなり、裏面保護膜形成用フィルムの転写不良が起こることを抑制できる。
In the film for forming the back surface protective film, the thermosetting resin is preferably 1 to 1000 parts by mass, more preferably 10 to 500 parts by mass, and particularly preferably 20 to 200 parts by mass with respect to 100 parts by mass of the binder polymer component. included. If the content of the thermosetting resin is less than 1 part by mass, sufficient adhesiveness may not be obtained, and if it exceeds 1000 parts by mass, the peeling force between the back surface protective film forming film and the pressure-sensitive adhesive sheet or base film. May cause transfer failure of the back surface protective film forming film. That is, when the content of the thermosetting resin is at least the above lower limit value, sufficient adhesiveness can be obtained. When the content of the thermosetting resin is not more than the above upper limit value, the peeling force between the back surface protective film forming film and the pressure-sensitive adhesive sheet or the base film becomes high, and transfer failure of the back surface protective film forming film occurs. Can be suppressed.
熱硬化剤は、熱硬化性樹脂、特にエポキシ樹脂に対する硬化剤として機能する。好ましい熱硬化剤としては、1分子中にエポキシ基と反応しうる官能基を2個以上有する化合物が挙げられる。その官能基としてはフェノール性水酸基、アルコール性水酸基、アミノ基、カルボキシル基及び酸無水物などが挙げられる。これらのうち好ましくはフェノール性水酸基、アミノ基、酸無水物などが挙げられ、さらに好ましくはフェノール性水酸基、アミノ基が挙げられる。
The thermosetting agent functions as a curing agent for thermosetting resins, especially epoxy resins. Preferred thermosetting agents include compounds having two or more functional groups capable of reacting with epoxy groups in one molecule. Examples of the functional group include a phenolic hydroxyl group, an alcoholic hydroxyl group, an amino group, a carboxyl group and an acid anhydride. Of these, phenolic hydroxyl groups, amino groups, acid anhydrides and the like are preferable, and phenolic hydroxyl groups and amino groups are more preferable.
フェノール系硬化剤の具体的な例としては、多官能系フェノール樹脂、ビフェノール、ノボラック型フェノール樹脂、ジシクロペンタジエン系フェノール樹脂、ザイロック型フェノール樹脂、アラルキルフェノール樹脂が挙げられる。アミン系硬化剤の具体的な例としては、DICY(ジシアンジアミド)が挙げられる。これらは、1種単独で、又は2種以上混合して使用することができる。
Specific examples of the phenol-based curing agent include polyfunctional phenol resins, biphenols, novolak-type phenol resins, dicyclopentadiene-based phenol resins, zylock-type phenol resins, and aralkyl phenol resins. Specific examples of the amine-based curing agent include DICY (dicyandiamide). These can be used alone or in combination of two or more.
熱硬化剤の含有量は、熱硬化性樹脂100質量部に対して、0.1~500質量部であることが好ましく、1~200質量部であることがより好ましい。熱硬化剤の含有量が少ないと硬化不足で接着性が得られないことがあり、過剰であると裏面保護膜形成用フィルムの吸湿率が高まり半導体装置の信頼性を低下させることがある。すなわち、熱硬化剤の含有量が上記下限値以上であると、十分に硬化し、十分な接着性が得られる。熱硬化剤の含有量が上記上限値以下であると、裏面保護膜形成用フィルムの吸湿率が高まり半導体装置の信頼性を低下させることを抑制できる。
The content of the thermosetting agent is preferably 0.1 to 500 parts by mass, and more preferably 1 to 200 parts by mass with respect to 100 parts by mass of the thermosetting resin. If the content of the thermosetting agent is small, the adhesiveness may not be obtained due to insufficient curing, and if it is excessive, the hygroscopicity of the film for forming the back surface protective film may increase and the reliability of the semiconductor device may be lowered. That is, when the content of the thermosetting agent is not more than the above lower limit value, the thermosetting agent is sufficiently cured and sufficient adhesiveness is obtained. When the content of the thermosetting agent is not more than the above upper limit value, the hygroscopicity of the film for forming the back surface protective film is increased, and it is possible to suppress the deterioration of the reliability of the semiconductor device.
エネルギー線硬化性成分としては、エネルギー線重合性基を含み、紫外線、電子線等のエネルギー線の照射を受けると重合硬化する低分子化合物(エネルギー線重合性化合物)を用いることができる。このようなエネルギー線硬化性成分として具体的には、トリメチロールプロパントリアクリレート、ペンタエリスリトールトリアクリレート、ペンタエリスリトールテトラアクリレート、ジペンタエリスリトールモノヒドロキシペンタアクリレート、ジペンタエリスリトールヘキサアクリレートあるいは1,4-ブチレングリコールジアクリレート、1,6-ヘキサンジオールジアクリレート、ポリエチレングリコールジアクリレート、オリゴエステルアクリレート、ウレタンアクリレート系オリゴマー、エポキシ変性アクリレート、ポリエーテルアクリレート及びイタコン酸オリゴマーなどのアクリレート系化合物が挙げられる。このような化合物は、分子内に少なくとも1つの重合性二重結合を有し、通常は、重量平均分子量が100~30000、好ましくは300~10000程度である。エネルギー線重合性化合物の配合量は、バインダーポリマー成分100質量部に対して、好ましくは1~1500質量部、より好ましくは10~500質量部、特に好ましくは20~200質量部である。
As the energy ray-curable component, a low molecular weight compound (energy ray-polymerizable compound) containing an energy ray-polymerizable group and polymerizing and curing when irradiated with energy rays such as ultraviolet rays and electron beams can be used. Specifically, as such an energy ray-curable component, trimethylolpropantriacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol monohydroxypentaacrylate, dipentaerythritol hexaacrylate or 1,4-butylene glycol. Examples thereof include acrylate-based compounds such as diacrylate, 1,6-hexanediol diacrylate, polyethylene glycol diacrylate, oligoester acrylate, urethane acrylate-based oligomer, epoxy-modified acrylate, polyether acrylate and itaconic acid oligomer. Such compounds have at least one polymerizable double bond in the molecule and usually have a weight average molecular weight of about 100 to 30,000, preferably about 300 to 10,000. The blending amount of the energy ray-polymerizable compound is preferably 1 to 1500 parts by mass, more preferably 10 to 500 parts by mass, and particularly preferably 20 to 200 parts by mass with respect to 100 parts by mass of the binder polymer component.
また、エネルギー線硬化性成分として、バインダーポリマー成分の主鎖又は側鎖に、エネルギー線重合性基が結合されてなるエネルギー線硬化型重合体を用いてもよい。このようなエネルギー線硬化型重合体は、バインダーポリマー成分としての機能と、硬化性成分としての機能を兼ね備える。
Further, as the energy ray-curable component, an energy ray-curable polymer in which an energy ray-curable group is bonded to the main chain or side chain of the binder polymer component may be used. Such an energy ray-curable polymer has both a function as a binder polymer component and a function as a curable component.
エネルギー線硬化型重合体の主骨格は特に限定はされず、バインダーポリマー成分として汎用されているアクリルポリマーであってもよく、またポリエステル、ポリエーテル等であってもよい。合成及び物性の制御が容易であることから、エネルギー線硬化型重合体は、アクリルポリマーを主骨格とすることが特に好ましい。
The main skeleton of the energy ray-curable polymer is not particularly limited, and may be an acrylic polymer that is widely used as a binder polymer component, or may be polyester, polyether, or the like. Since it is easy to synthesize and control the physical properties, it is particularly preferable that the energy ray-curable polymer has an acrylic polymer as a main skeleton.
エネルギー線硬化型重合体の主鎖又は側鎖に結合するエネルギー線重合性基は、たとえばエネルギー線重合性の炭素-炭素二重結合を含む基であり、具体的には(メタ)アクリロイル基等を例示することができる。エネルギー線重合性基は、アルキレン基、アルキレンオキシ基、ポリアルキレンオキシ基を介してエネルギー線硬化型重合体に結合していてもよい。
The energy ray-polymerizable group bonded to the main chain or side chain of the energy ray-curable polymer is, for example, a group containing an energy ray-polymerizable carbon-carbon double bond, specifically, a (meth) acryloyl group or the like. Can be exemplified. The energy ray-polymerizable group may be bonded to the energy ray-curable polymer via an alkylene group, an alkyleneoxy group, or a polyalkyleneoxy group.
エネルギー線重合性基が結合されたエネルギー線硬化型重合体の重量平均分子量(Mw)は、1万~200万であることが好ましく、10万~150万であることがより好ましい。また、エネルギー線硬化型重合体のガラス転移温度(Tg)は、好ましくは-60~50℃、さらに好ましくは-50~40℃、特に好ましくは-40~30℃の範囲にある。
The weight average molecular weight (Mw) of the energy ray-curable polymer to which the energy ray-polymerizable group is bonded is preferably 10,000 to 2 million, more preferably 100,000 to 1.5 million. The glass transition temperature (Tg) of the energy ray-curable polymer is preferably in the range of −60 to 50 ° C., more preferably −50 to 40 ° C., and particularly preferably −40 to 30 ° C.
エネルギー線硬化型重合体は、例えば、ヒドロキシル基、カルボキシル基、アミノ基、置換アミノ基、エポキシ基等の官能基を含有するアクリルポリマーと、前記官能基と反応する重合性基含有化合物とを反応させて得られる。前記重合性基含有化合物としては、前記官能基と反応する置換基とエネルギー線重合性炭素-炭素二重結合とを1分子毎に1~5個有する化合物が挙げられる。前記官能基と反応する置換基としては、イソシアネート基、グリシジル基、カルボキシル基等が挙げられる。
The energy ray-curable polymer reacts, for example, an acrylic polymer containing a functional group such as a hydroxyl group, a carboxyl group, an amino group, a substituted amino group, or an epoxy group with a polymerizable group-containing compound that reacts with the functional group. You can get it. Examples of the polymerizable group-containing compound include compounds having 1 to 5 substituents that react with the functional group and an energy ray-polymerizable carbon-carbon double bond for each molecule. Examples of the substituent that reacts with the functional group include an isocyanate group, a glycidyl group, a carboxyl group and the like.
重合性基含有化合物としては、(メタ)アクリロイルオキシエチルイソシアネート、メタ-イソプロペニル-α,α-ジメチルベンジルイソシアネート、(メタ)アクリロイルイソシアネート、アリルイソシアネート、グリシジル(メタ)アクリレート;(メタ)アクリル酸等が挙げられる。
Examples of the polymerizable group-containing compound include (meth) acryloyloxyethyl isocyanate, meta-isopropenyl-α, α-dimethylbenzyl isocyanate, (meth) acryloyl isocyanate, allyl isocyanate, glycidyl (meth) acrylate; (meth) acrylic acid and the like. Can be mentioned.
アクリルポリマーは、ヒドロキシル基、カルボキシル基、アミノ基、置換アミノ基、エポキシ基等の官能基を有する(メタ)アクリルモノマー又はその誘導体と、これと共重合可能な他の(メタ)アクリル酸エステルモノマー又はその誘導体とからなる共重合体であることが好ましい。
The acrylic polymer is a (meth) acrylic monomer having a functional group such as a hydroxyl group, a carboxyl group, an amino group, a substituted amino group, or an epoxy group or a derivative thereof, and another (meth) acrylic acid ester monomer copolymerizable therewith. Alternatively, it is preferably a copolymer composed of a derivative thereof.
ヒドロキシル基、カルボキシル基、アミノ基、置換アミノ基、エポキシ基等の官能基を有する(メタ)アクリルモノマー又はその誘導体としては、例えば、ヒドロキシル基を有する2-ヒドロキシエチル(メタ)アクリレート、2-ヒドロキシプロピル(メタ)アクリレート;カルボキシル基を有するアクリル酸、メタクリル酸、イタコン酸;エポキシ基を有するグリシジルメタクリレート、グリシジルアクリレートなどが挙げられる。
Examples of the (meth) acrylic monomer having a functional group such as a hydroxyl group, a carboxyl group, an amino group, a substituted amino group, and an epoxy group or a derivative thereof include 2-hydroxyethyl (meth) acrylate having a hydroxyl group and 2-hydroxy. Propyl (meth) acrylate; acrylic acid having a carboxyl group, methacrylic acid, itaconic acid; glycidyl methacrylate having an epoxy group, glycidyl acrylate and the like can be mentioned.
上記モノマーと共重合可能な他の(メタ)アクリル酸エステルモノマー又はその誘導体としては、例えば、アルキル基の炭素数が1~18であるアルキル(メタ)アクリレート、具体的にはメチル(メタ)アクリレート、エチル(メタ)アクリレート、プロピル(メタ)アクリレート、ブチル(メタ)アクリレート、2-エチルヘキシル(メタ)アクリレートなどが挙げられ;環状骨格を有する(メタ)アクリレート、具体的にはシクロヘキシル(メタ)アクリレート、ベンジル(メタ)アクリレート、イソボルニルアクリレート、ジシクロペンタニルアクリレート、ジシクロペンテニルアクリレート、ジシクロペンテニルオキシエチルアクリレート、イミドアクリレートなどが挙げられる。また、上記アクリルポリマーには、酢酸ビニル、アクリロニトリル、スチレンなどが共重合されていてもよい。
As another (meth) acrylic acid ester monomer or a derivative thereof that can be copolymerized with the above monomer, for example, an alkyl (meth) acrylate having an alkyl group having 1 to 18 carbon atoms, specifically a methyl (meth) acrylate. , Ethyl (meth) acrylate, propyl (meth) acrylate, butyl (meth) acrylate, 2-ethylhexyl (meth) acrylate and the like; (meth) acrylate having a cyclic skeleton, specifically cyclohexyl (meth) acrylate, Examples thereof include benzyl (meth) acrylate, isobornyl acrylate, dicyclopentanyl acrylate, dicyclopentenyl acrylate, dicyclopentenyloxyethyl acrylate, and imide acrylate. Moreover, vinyl acetate, acrylonitrile, styrene and the like may be copolymerized with the said acrylic polymer.
エネルギー線硬化型重合体を使用する場合であっても、前記したエネルギー線重合性化合物を併用してもよく、またバインダーポリマー成分を併用してもよい。本実施形態における裏面保護膜形成用フィルム中のこれら三者の配合量の関係は、エネルギー線硬化型重合体及びバインダーポリマー成分の質量の和100質量部に対して、エネルギー線重合性化合物が好ましくは1~1500質量部、より好ましくは10~500質量部、特に好ましくは20~200質量部含まれる。エネルギー線重合性化合物の含有量が上記数値範囲内であると、裏面保護膜形成用組成物の硬化性をより高められる。
Even when an energy ray-curable polymer is used, the above-mentioned energy ray-polymerizable compound may be used in combination, or a binder polymer component may be used in combination. Regarding the relationship between the blending amounts of these three in the back surface protective film forming film in the present embodiment, the energy ray-polymerizable compound is preferable with respect to 100 parts by mass of the total mass of the energy ray-curable polymer and the binder polymer component. Is contained in an amount of 1 to 1500 parts by mass, more preferably 10 to 500 parts by mass, and particularly preferably 20 to 200 parts by mass. When the content of the energy ray-polymerizable compound is within the above numerical range, the curability of the back surface protective film forming composition can be further enhanced.
熱硬化性成分及びエネルギー線硬化性成分を併用する場合、熱硬化性成分とエネルギー線硬化性成分との質量比は、例えば、5:95~95:5が好ましく、10:90~90:10がより好ましく、15:85~85:15がさらに好ましい。熱硬化性成分とエネルギー線硬化性成分との質量比が上記数値範囲内であると、裏面保護膜形成用組成物の硬化性をより高められる。
When the thermosetting component and the energy ray-curable component are used in combination, the mass ratio of the thermosetting component and the energy ray-curable component is preferably, for example, 5:95 to 95: 5, and 10:90 to 90:10. Is more preferable, and 15:85 to 85:15 is even more preferable. When the mass ratio of the thermosetting component and the energy ray-curable component is within the above numerical range, the curability of the back surface protective film forming composition can be further enhanced.
裏面保護膜形成用フィルムにエネルギー線硬化性を付与することで、裏面保護膜形成用フィルムを簡便かつ短時間で硬化でき、裏面保護膜付チップの生産効率が向上する。エネルギー線硬化性の裏面保護膜形成用フィルムは、エネルギー線照射により短時間で硬化するため、簡便に裏面保護膜を形成でき、生産効率の向上に寄与しうる。
By imparting energy ray curability to the back surface protective film forming film, the back surface protective film forming film can be cured easily and in a short time, and the production efficiency of the chip with the back surface protective film is improved. Since the energy ray-curable back surface protective film forming film is cured in a short time by energy ray irradiation, the back surface protective film can be easily formed and can contribute to the improvement of production efficiency.
裏面保護膜形成用フィルムは、上記バインダーポリマー成分及び硬化性成分に加えて下記成分を含むことができる。
The back surface protective film forming film can contain the following components in addition to the above binder polymer component and curable component.
(着色剤)
裏面保護膜形成用フィルムは、着色剤を含有することが好ましい。裏面保護膜形成用フィルムに着色剤を配合することで、半導体装置を機器に組み込んだ際に、周囲の装置から発生する赤外線等を遮蔽し、それらによる半導体装置の誤作動を防止することができる。加えて、裏面保護膜形成用フィルムに着色剤を配合することで、裏面保護膜形成用フィルムを硬化して得た裏面保護膜に、製品番号等を印字した際の文字の視認性が向上する。すなわち、裏面保護膜を形成された半導体装置や半導体チップでは、裏面保護膜の表面に品番等が通常レーザーマーキング法(レーザー光により裏面保護膜表面を削り取り印字を行う方法)により印字されるが、裏面保護膜が着色剤を含有することで、裏面保護膜のレーザー光により削り取られた部分とそうでない部分とのコントラスト差が充分に得られ、視認性が向上する。着色剤としては、有機又は無機の顔料及び染料が用いられる。これらの中でも電磁波や赤外線遮蔽性の点から黒色顔料が好ましい。黒色顔料としては、カーボンブラック、酸化鉄、二酸化マンガン、アニリンブラック、活性炭等が用いられるが、これらに限定されることはない。半導体装置の信頼性を高める観点からは、カーボンブラックが特に好ましい。着色剤は、1種を単独で用いてもよいし、2種以上を組み合わせて用いてもよい。本実施形態における裏面保護膜形成用フィルムの高い硬化性は、着色剤を用い、紫外線の透過性が低下した場合に、特に好ましく発揮される。このような着色剤としては、可視光の透過性を低下させる着色剤、赤外線及び紫外線の透過性を低下させる着色剤、可視光、赤外線及び紫外線の透過性を低下させる着色剤が挙げられる。このような着色剤としては、上記の黒色顔料のほか、可視光の波長領域、赤外線及び紫外線の波長領域、可視光、赤外線及び紫外線の波長領域で吸収性又は反射性を有するものであれば特に限定されない。 (Colorant)
The back surface protective film forming film preferably contains a colorant. By blending a colorant in the back surface protective film forming film, it is possible to shield infrared rays and the like generated from surrounding devices when the semiconductor device is incorporated into a device, and prevent the semiconductor device from malfunctioning due to them. .. In addition, by blending a colorant in the back surface protective film forming film, the visibility of characters when a product number or the like is printed on the back surface protective film obtained by curing the back surface protective film forming film is improved. .. That is, in a semiconductor device or a semiconductor chip on which a back surface protective film is formed, a product number or the like is usually printed on the surface of the back surface protective film by a laser marking method (a method of scraping off the back surface protective film surface with laser light). When the back surface protective film contains a colorant, a sufficient contrast difference between a portion of the back surface protective film that has been scraped off by the laser beam and a portion that has not been scraped off can be sufficiently obtained, and visibility is improved. As the colorant, organic or inorganic pigments and dyes are used. Among these, black pigments are preferable from the viewpoint of electromagnetic wave and infrared shielding properties. As the black pigment, carbon black, iron oxide, manganese dioxide, aniline black, activated carbon and the like are used, but the black pigment is not limited thereto. From the viewpoint of increasing the reliability of the semiconductor device, carbon black is particularly preferable. As the colorant, one type may be used alone, or two or more types may be used in combination. The high curability of the back surface protective film forming film in the present embodiment is particularly preferably exhibited when a colorant is used and the transparency of ultraviolet rays is reduced. Examples of such a colorant include a colorant that reduces the transparency of visible light, a colorant that reduces the transparency of infrared rays and ultraviolet rays, and a colorant that reduces the transparency of visible light, infrared rays, and ultraviolet rays. In addition to the above-mentioned black pigments, such colorants are particularly those having absorbency or reflectivity in the wavelength region of visible light, the wavelength region of infrared rays and ultraviolet rays, and the wavelength region of visible light, infrared rays and ultraviolet rays. Not limited.
裏面保護膜形成用フィルムは、着色剤を含有することが好ましい。裏面保護膜形成用フィルムに着色剤を配合することで、半導体装置を機器に組み込んだ際に、周囲の装置から発生する赤外線等を遮蔽し、それらによる半導体装置の誤作動を防止することができる。加えて、裏面保護膜形成用フィルムに着色剤を配合することで、裏面保護膜形成用フィルムを硬化して得た裏面保護膜に、製品番号等を印字した際の文字の視認性が向上する。すなわち、裏面保護膜を形成された半導体装置や半導体チップでは、裏面保護膜の表面に品番等が通常レーザーマーキング法(レーザー光により裏面保護膜表面を削り取り印字を行う方法)により印字されるが、裏面保護膜が着色剤を含有することで、裏面保護膜のレーザー光により削り取られた部分とそうでない部分とのコントラスト差が充分に得られ、視認性が向上する。着色剤としては、有機又は無機の顔料及び染料が用いられる。これらの中でも電磁波や赤外線遮蔽性の点から黒色顔料が好ましい。黒色顔料としては、カーボンブラック、酸化鉄、二酸化マンガン、アニリンブラック、活性炭等が用いられるが、これらに限定されることはない。半導体装置の信頼性を高める観点からは、カーボンブラックが特に好ましい。着色剤は、1種を単独で用いてもよいし、2種以上を組み合わせて用いてもよい。本実施形態における裏面保護膜形成用フィルムの高い硬化性は、着色剤を用い、紫外線の透過性が低下した場合に、特に好ましく発揮される。このような着色剤としては、可視光の透過性を低下させる着色剤、赤外線及び紫外線の透過性を低下させる着色剤、可視光、赤外線及び紫外線の透過性を低下させる着色剤が挙げられる。このような着色剤としては、上記の黒色顔料のほか、可視光の波長領域、赤外線及び紫外線の波長領域、可視光、赤外線及び紫外線の波長領域で吸収性又は反射性を有するものであれば特に限定されない。 (Colorant)
The back surface protective film forming film preferably contains a colorant. By blending a colorant in the back surface protective film forming film, it is possible to shield infrared rays and the like generated from surrounding devices when the semiconductor device is incorporated into a device, and prevent the semiconductor device from malfunctioning due to them. .. In addition, by blending a colorant in the back surface protective film forming film, the visibility of characters when a product number or the like is printed on the back surface protective film obtained by curing the back surface protective film forming film is improved. .. That is, in a semiconductor device or a semiconductor chip on which a back surface protective film is formed, a product number or the like is usually printed on the surface of the back surface protective film by a laser marking method (a method of scraping off the back surface protective film surface with laser light). When the back surface protective film contains a colorant, a sufficient contrast difference between a portion of the back surface protective film that has been scraped off by the laser beam and a portion that has not been scraped off can be sufficiently obtained, and visibility is improved. As the colorant, organic or inorganic pigments and dyes are used. Among these, black pigments are preferable from the viewpoint of electromagnetic wave and infrared shielding properties. As the black pigment, carbon black, iron oxide, manganese dioxide, aniline black, activated carbon and the like are used, but the black pigment is not limited thereto. From the viewpoint of increasing the reliability of the semiconductor device, carbon black is particularly preferable. As the colorant, one type may be used alone, or two or more types may be used in combination. The high curability of the back surface protective film forming film in the present embodiment is particularly preferably exhibited when a colorant is used and the transparency of ultraviolet rays is reduced. Examples of such a colorant include a colorant that reduces the transparency of visible light, a colorant that reduces the transparency of infrared rays and ultraviolet rays, and a colorant that reduces the transparency of visible light, infrared rays, and ultraviolet rays. In addition to the above-mentioned black pigments, such colorants are particularly those having absorbency or reflectivity in the wavelength region of visible light, the wavelength region of infrared rays and ultraviolet rays, and the wavelength region of visible light, infrared rays and ultraviolet rays. Not limited.
着色剤の配合量は、裏面保護膜形成用フィルムを構成する全固形分100質量部に対して、好ましくは0.1~35質量部、さらに好ましくは0.5~25質量部、特に好ましくは1~15質量部である。着色剤の配合量が上記下限値以上であると、赤外線等を十分に遮蔽できる。着色剤の配合量が上記上限値以下であると、裏面保護膜形成用組成物の硬化性をより高められる。
The blending amount of the colorant is preferably 0.1 to 35 parts by mass, more preferably 0.5 to 25 parts by mass, and particularly preferably 0.5 to 25 parts by mass with respect to 100 parts by mass of the total solid content constituting the back surface protective film forming film. It is 1 to 15 parts by mass. When the blending amount of the colorant is at least the above lower limit value, infrared rays and the like can be sufficiently shielded. When the blending amount of the colorant is not more than the above upper limit value, the curability of the back surface protective film forming composition can be further enhanced.
(硬化促進剤)
硬化促進剤は、裏面保護膜形成用フィルムの硬化速度を調整するために用いられる。硬化促進剤は、特に、硬化性成分において、エポキシ樹脂と熱硬化剤とを併用する場合に好ましく用いられる。 (Curing accelerator)
The curing accelerator is used to adjust the curing rate of the back surface protective film forming film. The curing accelerator is preferably used when the epoxy resin and the thermosetting agent are used in combination, especially in the curable component.
硬化促進剤は、裏面保護膜形成用フィルムの硬化速度を調整するために用いられる。硬化促進剤は、特に、硬化性成分において、エポキシ樹脂と熱硬化剤とを併用する場合に好ましく用いられる。 (Curing accelerator)
The curing accelerator is used to adjust the curing rate of the back surface protective film forming film. The curing accelerator is preferably used when the epoxy resin and the thermosetting agent are used in combination, especially in the curable component.
好ましい硬化促進剤としては、トリエチレンジアミン、ベンジルジメチルアミン、トリエタノールアミン、ジメチルアミノエタノール、トリス(ジメチルアミノメチル)フェノールなどの3級アミン類;2-メチルイミダゾール、2-フェニルイミダゾール、2-フェニル-4-メチルイミダゾール、2-フェニル-4,5-ジヒドロキシメチルイミダゾール、2-フェニル-4-メチル-5-ヒドロキシメチルイミダゾールなどのイミダゾール類;トリブチルホスフィン、ジフェニルホスフィン、トリフェニルホスフィンなどの有機ホスフィン類;テトラフェニルホスホニウムテトラフェニルボレート、トリフェニルホスフィンテトラフェニルボレートなどのテトラフェニルボロン塩などが挙げられる。これらは1種単独で、又は2種以上混合して使用することができる。
Preferred curing accelerators are tertiary amines such as triethylenediamine, benzyldimethylamine, triethanolamine, dimethylaminoethanol, tris (dimethylaminomethyl) phenol; 2-methylimidazole, 2-phenylimidazole, 2-phenyl- Imidazoles such as 4-methylimidazole, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole; organic phosphines such as tributylphosphine, diphenylphosphine, triphenylphosphine; Examples thereof include tetraphenylborone salts such as tetraphenylphosphonium tetraphenylborate and triphenylphosphine tetraphenylborate. These can be used alone or in combination of two or more.
硬化促進剤は、硬化性成分100質量部に対して、好ましくは0.01~10質量部、さらに好ましくは0.1~1質量部の量で含まれる。硬化促進剤を上記範囲の量で含有することにより、高温度高湿度下に曝されても優れた接着特性を有し、厳しいリフロー条件に曝された場合であっても高い信頼性を達成することができる。硬化促進剤の含有量が少ないと硬化不足で十分な接着特性が得られず、過剰であると高い極性をもつ硬化促進剤は高温度高湿度下で裏面保護膜形成用フィルム中を接着界面側に移動し、偏析することにより半導体装置の信頼性を低下させる。
The curing accelerator is contained in an amount of preferably 0.01 to 10 parts by mass, more preferably 0.1 to 1 part by mass with respect to 100 parts by mass of the curable component. By containing the curing accelerator in an amount in the above range, it has excellent adhesive properties even when exposed to high temperature and high humidity, and achieves high reliability even when exposed to severe reflow conditions. be able to. If the content of the curing accelerator is low, sufficient adhesive properties cannot be obtained due to insufficient curing, and if it is excessive, the curing accelerator has high polarity. The reliability of the semiconductor device is lowered by moving to and segregating.
(カップリング剤)
カップリング剤は、裏面保護膜形成用フィルムのチップに対する接着性、密着性及び裏面保護膜の凝集性のいずれか1種以上を向上させるために用いてもよい。また、カップリング剤を使用することで、裏面保護膜形成用フィルムを硬化して得られる裏面保護膜の耐熱性を損なうことなく、その耐水性を向上することができる。 (Coupling agent)
The coupling agent may be used to improve any one or more of the adhesiveness, adhesion and cohesiveness of the back surface protective film to the chip of the back surface protective film forming film. Further, by using the coupling agent, the water resistance of the back surface protective film formed by curing the back surface protective film can be improved without impairing the heat resistance of the back surface protective film.
カップリング剤は、裏面保護膜形成用フィルムのチップに対する接着性、密着性及び裏面保護膜の凝集性のいずれか1種以上を向上させるために用いてもよい。また、カップリング剤を使用することで、裏面保護膜形成用フィルムを硬化して得られる裏面保護膜の耐熱性を損なうことなく、その耐水性を向上することができる。 (Coupling agent)
The coupling agent may be used to improve any one or more of the adhesiveness, adhesion and cohesiveness of the back surface protective film to the chip of the back surface protective film forming film. Further, by using the coupling agent, the water resistance of the back surface protective film formed by curing the back surface protective film can be improved without impairing the heat resistance of the back surface protective film.
カップリング剤としては、バインダーポリマー成分、硬化性成分などが有する官能基と反応する基を有する化合物が好ましく使用される。カップリング剤としては、シランカップリング剤が望ましい。このようなカップリング剤としてはγ-グリシドキシプロピルトリメトキシシラン、γ-グリシドキシプロピルメチルジエトキシシラン、β-(3,4-エポキシシクロヘキシル)エチルトリメトキシシラン、γ-(メタクリロキシプロピル)トリメトキシシラン、γ-アミノプロピルトリメトキシシラン、N-6-(アミノエチル)-γ-アミノプロピルトリメトキシシラン、N-6-(アミノエチル)-γ-アミノプロピルメチルジエトキシシラン、N-フェニル-γ-アミノプロピルトリメトキシシラン、γ-ウレイドプロピルトリエトキシシラン、γ-メルカプトプロピルトリメトキシシラン、γ-メルカプトプロピルメチルジメトキシシラン、ビス(3-トリエトキシシリルプロピル)テトラスルファン、メチルトリメトキシシラン、メチルトリエトキシシラン、ビニルトリメトキシシラン、ビニルトリアセトキシシラン、イミダゾールシランなどが挙げられる。これらは1種単独で、又は2種以上混合して使用することができる。
As the coupling agent, a compound having a group that reacts with a functional group of a binder polymer component, a curable component, or the like is preferably used. As the coupling agent, a silane coupling agent is desirable. Examples of such a coupling agent include γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, and γ- (methacryloxypropyl). ) Trimethoxysilane, γ-aminopropyltrimethoxysilane, N-6- (aminoethyl) -γ-aminopropyltrimethoxysilane, N-6- (aminoethyl) -γ-aminopropylmethyldiethoxysilane, N- Phenyl-γ-aminopropyltrimethoxysilane, γ-ureidopropyltriethoxysilane, γ-mercaptopropyltrimethoxysilane, γ-mercaptopropylmethyldimethoxysilane, bis (3-triethoxysilylpropyl) tetrasulfan, methyltrimethoxy Examples thereof include silane, methyltriethoxysilane, vinyltrimethoxysilane, vinyltriacetoxysilane, and imidazolesilane. These can be used alone or in combination of two or more.
カップリング剤は、バインダーポリマー成分及び硬化性成分の合計100質量部に対して、通常0.1~20質量部、好ましくは0.2~10質量部、より好ましくは0.3~5質量部の割合で含まれる。カップリング剤の含有量が0.1質量部未満の場合、上記の効果が得られない可能性があり、20質量部を超えるとアウトガスの原因となる可能性がある。すなわち、カップリング剤の含有量が上記下限値以上であると、上記の効果が得られる。カップリング剤の含有量が上記上限値以下であると、アウトガスの発生を抑制できる。
The coupling agent is usually 0.1 to 20 parts by mass, preferably 0.2 to 10 parts by mass, and more preferably 0.3 to 5 parts by mass with respect to 100 parts by mass of the total of the binder polymer component and the curable component. Is included in the ratio of. If the content of the coupling agent is less than 0.1 parts by mass, the above effect may not be obtained, and if it exceeds 20 parts by mass, it may cause outgas. That is, when the content of the coupling agent is at least the above lower limit value, the above effect can be obtained. When the content of the coupling agent is not more than the above upper limit value, the generation of outgas can be suppressed.
(無機充填材)
無機充填材を裏面保護膜形成用フィルムに配合することにより、硬化後の裏面保護膜における熱膨張係数を調整することが可能となる。このため、半導体チップに対して硬化後の裏面保護膜の熱膨張係数を最適化することで半導体装置の信頼性を向上させることができる。また、硬化後の裏面保護膜の吸湿率を低減させることも可能となる。 (Inorganic filler)
By blending the inorganic filler into the film for forming the back surface protective film, it is possible to adjust the coefficient of thermal expansion of the back surface protective film after curing. Therefore, the reliability of the semiconductor device can be improved by optimizing the coefficient of thermal expansion of the back surface protective film after curing for the semiconductor chip. It is also possible to reduce the hygroscopicity of the back surface protective film after curing.
無機充填材を裏面保護膜形成用フィルムに配合することにより、硬化後の裏面保護膜における熱膨張係数を調整することが可能となる。このため、半導体チップに対して硬化後の裏面保護膜の熱膨張係数を最適化することで半導体装置の信頼性を向上させることができる。また、硬化後の裏面保護膜の吸湿率を低減させることも可能となる。 (Inorganic filler)
By blending the inorganic filler into the film for forming the back surface protective film, it is possible to adjust the coefficient of thermal expansion of the back surface protective film after curing. Therefore, the reliability of the semiconductor device can be improved by optimizing the coefficient of thermal expansion of the back surface protective film after curing for the semiconductor chip. It is also possible to reduce the hygroscopicity of the back surface protective film after curing.
好ましい無機充填材としては、シリカ、アルミナ、タルク、炭酸カルシウム、酸化チタン、酸化鉄、炭化珪素、窒化ホウ素等の粉末、これらを球形化したビーズ、単結晶繊維及びガラス繊維等が挙げられる。これらのなかでも、シリカフィラー及びアルミナフィラーが好ましい。上記無機充填材は単独で又は2種以上を混合して使用することができる。無機充填材の含有量は、裏面保護膜形成用フィルムを構成する全固形分100質量部に対して、通常1~80質量部の範囲で調整が可能である。
Preferred inorganic fillers include powders of silica, alumina, talc, calcium carbonate, titanium oxide, iron oxide, silicon carbide, boron nitride and the like, spherical beads, single crystal fibers, glass fibers and the like. Among these, silica filler and alumina filler are preferable. The inorganic filler can be used alone or in combination of two or more. The content of the inorganic filler can be usually adjusted in the range of 1 to 80 parts by mass with respect to 100 parts by mass of the total solid content constituting the back surface protective film forming film.
(光重合開始剤)
裏面保護膜形成用フィルムが、前述した硬化性成分としてエネルギー線硬化性成分を含有する場合には、その使用に際して、紫外線等のエネルギー線を照射して、エネルギー線硬化性成分を硬化させる。この際、裏面保護膜形成用組成物中に光重合開始剤を含有させることで、重合硬化時間ならびに光線照射量を少なくすることができる。 (Photopolymerization initiator)
When the film for forming a back surface protective film contains an energy ray-curable component as the above-mentioned curable component, the energy ray-curable component is cured by irradiating with energy rays such as ultraviolet rays when using the film. At this time, by incorporating the photopolymerization initiator in the composition for forming the back surface protective film, the polymerization curing time and the amount of light irradiation can be reduced.
裏面保護膜形成用フィルムが、前述した硬化性成分としてエネルギー線硬化性成分を含有する場合には、その使用に際して、紫外線等のエネルギー線を照射して、エネルギー線硬化性成分を硬化させる。この際、裏面保護膜形成用組成物中に光重合開始剤を含有させることで、重合硬化時間ならびに光線照射量を少なくすることができる。 (Photopolymerization initiator)
When the film for forming a back surface protective film contains an energy ray-curable component as the above-mentioned curable component, the energy ray-curable component is cured by irradiating with energy rays such as ultraviolet rays when using the film. At this time, by incorporating the photopolymerization initiator in the composition for forming the back surface protective film, the polymerization curing time and the amount of light irradiation can be reduced.
このような光重合開始剤として具体的には、ベンゾフェノン、アセトフェノン、ベンゾイン、ベンゾインメチルエーテル、ベンゾインエチルエーテル、ベンゾインイソプロピルエーテル、ベンゾインイソブチルエーテル、ベンゾイン安息香酸、ベンゾイン安息香酸メチル、ベンゾインジメチルケタール、2,4-ジエチルチオキサンソン、α-ヒドロキシシクロヘキシルフェニルケトン、ベンジルジフェニルサルファイド、テトラメチルチウラムモノサルファイド、アゾビスイソブチロニトリル、ベンジル、ジベンジル、ジアセチル、1,2-ジフェニルメタン、2-ヒドロキシ-2-メチル-1-[4-(1-メチルビニル)フェニル]プロパノン、2,4,6-トリメチルベンゾイルジフェニルフォスフィンオキサイド及びβ-クロールアンスラキノンなどが挙げられる。光重合開始剤は1種類単独で、又は2種類以上を組み合わせて用いることができる。
Specific examples of such photopolymerization initiators include benzophenone, acetophenone, benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin benzoic acid, methyl benzoin benzoate, benzoin dimethyl ketal, 2, 4-diethylthioxanthone, α-hydroxycyclohexylphenylketone, benzyldiphenylsulfide, tetramethylthiuram monosulfide, azobisisobutyronitrile, benzyl, dibenzyl, diacetyl, 1,2-diphenylmethane, 2-hydroxy-2-methyl Examples thereof include -1- [4- (1-methylvinyl) phenyl] propanone, 2,4,6-trimethylbenzoyldiphenylphosphine oxide and β-chloranthraquinone. The photopolymerization initiator may be used alone or in combination of two or more.
光重合開始剤の配合割合は、エネルギー線硬化性成分100質量部に対して0.1~10質量部含まれることが好ましく、1~5質量部含まれることがより好ましい。0.1質量部未満であると光重合の不足で満足な転写性が得られないことがあり、10質量部を超えると光重合に寄与しない残留物が生成し、裏面保護膜形成用フィルムの硬化性が不十分となることがある。すなわち、光重合開始剤の配合割合が上記下限値以上であると、十分に光重合して、満足な転写性が得られる。光重合開始剤の配合割合が上記上限値以下であると、光重合に寄与しない残留物の生成を抑制し、裏面保護膜形成用フィルムの硬化性をより高められる。
The blending ratio of the photopolymerization initiator is preferably 0.1 to 10 parts by mass and more preferably 1 to 5 parts by mass with respect to 100 parts by mass of the energy ray-curable component. If it is less than 0.1 part by mass, satisfactory transferability may not be obtained due to insufficient photopolymerization, and if it exceeds 10 parts by mass, a residue that does not contribute to photopolymerization is generated, and the back surface protective film forming film is formed. Curability may be insufficient. That is, when the blending ratio of the photopolymerization initiator is at least the above lower limit value, sufficient photopolymerization is performed and satisfactory transferability can be obtained. When the blending ratio of the photopolymerization initiator is not more than the above upper limit value, the formation of residues that do not contribute to photopolymerization can be suppressed, and the curability of the back surface protective film forming film can be further enhanced.
(架橋剤)
裏面保護膜形成用フィルムの初期接着力及び凝集力を調節するために、架橋剤を添加することもできる。架橋剤としては有機多価イソシアネート化合物、有機多価イミン化合物などが挙げられる。 (Crosslinking agent)
A cross-linking agent can also be added to adjust the initial adhesive force and cohesive force of the back surface protective film forming film. Examples of the cross-linking agent include an organic polyvalent isocyanate compound and an organic polyvalent imine compound.
裏面保護膜形成用フィルムの初期接着力及び凝集力を調節するために、架橋剤を添加することもできる。架橋剤としては有機多価イソシアネート化合物、有機多価イミン化合物などが挙げられる。 (Crosslinking agent)
A cross-linking agent can also be added to adjust the initial adhesive force and cohesive force of the back surface protective film forming film. Examples of the cross-linking agent include an organic polyvalent isocyanate compound and an organic polyvalent imine compound.
上記有機多価イソシアネート化合物としては、芳香族多価イソシアネート化合物、脂肪族多価イソシアネート化合物、脂環族多価イソシアネート化合物及びこれらの有機多価イソシアネート化合物の三量体、ならびにこれら有機多価イソシアネート化合物とポリオール化合物とを反応させて得られる末端イソシアネートウレタンプレポリマー等を挙げることができる。
Examples of the organic polyvalent isocyanate compound include aromatic polyvalent isocyanate compounds, aliphatic polyvalent isocyanate compounds, alicyclic polyvalent isocyanate compounds, trimerics of these organic polyvalent isocyanate compounds, and these organic polyvalent isocyanate compounds. Examples thereof include a terminal isocyanate urethane prepolymer obtained by reacting with a polyol compound.
有機多価イソシアネート化合物としては、たとえば2,4-トリレンジイソシアネート、2,6-トリレンジイソシアネート、1,3-キシリレンジイソシアネート、1,4-キシレンジイソシアネート、ジフェニルメタン-4,4’-ジイソシアネート、ジフェニルメタン-2,4’-ジイソシアネート、3-メチルジフェニルメタンジイソシアネート、ヘキサメチレンジイソシアネート、イソホロンジイソシアネート、ジシクロヘキシルメタン-4,4’-ジイソシアネート、ジシクロヘキシルメタン-2,4’-ジイソシアネート、トリメチロールプロパンアダクトトリレンジイソシアネート及びリジンイソシアネートが挙げられる。
Examples of the organic polyvalent isocyanate compound include 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 1,3-xylylene diisocyanate, 1,4-xylene diisocyanate, diphenylmethane-4,4'-diisocyanate, and diphenylmethane. -2,4'-diisocyanate, 3-methyldiphenylmethane diisocyanate, hexamethylene diisocyanate, isophorone diisocyanate, dicyclohexylmethane-4,4'-diisocyanate, dicyclohexylmethane-2,4'-diisocyanate, trimethylpropane adduct tolylene diisocyanate and lysine Isocyanate can be mentioned.
上記有機多価イミン化合物としては、N,N’-ジフェニルメタン-4,4’-ビス(1-アジリジンカルボキシアミド)、トリメチロールプロパン-トリ-β-アジリジニルプロピオネート、テトラメチロールメタン-トリ-β-アジリジニルプロピオネート及びN,N’-トルエン-2,4-ビス(1-アジリジンカルボキシアミド)トリエチレンメラミン等を挙げることができる。
Examples of the organic polyvalent imine compound include N, N'-diphenylmethane-4,4'-bis (1-aziridinecarboxyamide), trimethylpropan-tri-β-aziridinyl propionate, and tetramethylolmethane-tri. Examples thereof include -β-aziridinyl propionate and N, N'-toluene-2,4-bis (1-aziridinecarboxyamide) triethylene melamine.
架橋剤はバインダーポリマー成分及びエネルギー線硬化型重合体の合計量100質量部に対して通常0.01~20質量部、好ましくは0.1~10質量部、より好ましくは0.5~5質量部の比率で用いられる。架橋剤の含有量が上記数値範囲内であると、裏面保護膜形成用フィルムの初期接着力及び凝集力をより高められる。
The cross-linking agent is usually 0.01 to 20 parts by mass, preferably 0.1 to 10 parts by mass, and more preferably 0.5 to 5 parts by mass with respect to 100 parts by mass of the total amount of the binder polymer component and the energy ray-curable polymer. Used in proportions of parts. When the content of the cross-linking agent is within the above numerical range, the initial adhesive force and the cohesive force of the back surface protective film forming film can be further enhanced.
(汎用添加剤)
裏面保護膜形成用フィルムには、上記の他に、必要に応じて各種添加剤(汎用添加剤)が配合されてもよい。各種添加剤としては、レベリング剤、可塑剤、帯電防止剤、酸化防止剤、イオン捕捉剤、ゲッタリング剤、連鎖移動剤などが挙げられる。 (General-purpose additive)
In addition to the above, various additives (general-purpose additives) may be added to the back surface protective film forming film, if necessary. Examples of various additives include leveling agents, plasticizers, antistatic agents, antioxidants, ion scavengers, gettering agents, chain transfer agents and the like.
裏面保護膜形成用フィルムには、上記の他に、必要に応じて各種添加剤(汎用添加剤)が配合されてもよい。各種添加剤としては、レベリング剤、可塑剤、帯電防止剤、酸化防止剤、イオン捕捉剤、ゲッタリング剤、連鎖移動剤などが挙げられる。 (General-purpose additive)
In addition to the above, various additives (general-purpose additives) may be added to the back surface protective film forming film, if necessary. Examples of various additives include leveling agents, plasticizers, antistatic agents, antioxidants, ion scavengers, gettering agents, chain transfer agents and the like.
(溶媒)
裏面保護膜形成用組成物は、さらに溶媒を含有することが好ましい。溶媒を含有する裏面保護膜形成用組成物は、取り扱い性が良好となる。
前記溶媒は特に限定されないが、好ましいものとしては、例えば、トルエン、キシレン等の炭化水素;メタノール、エタノール、2-プロパノール、イソブチルアルコール(2-メチルプロパン-1-オール)、1-ブタノール等のアルコール;酢酸エチル等のエステル;アセトン、メチルエチルケトン等のケトン;テトラヒドロフラン等のエーテル;ジメチルホルムアミド、N-メチルピロリドン等のアミド(アミド結合を有する化合物)等が挙げられる。
裏面保護膜形成用組成物が含有する溶媒は、1種のみでもよいし、2種以上でもよく、2種以上である場合、それらの組み合わせ及び比率は任意に選択できる。
溶媒の含有量は、裏面保護膜形成用組成物の総質量に対して、5~95質量%が好ましく、7~93質量%がより好ましく、10~90質量%がさらに好ましい。溶媒の含有量が上記下限値以上であると、裏面保護膜形成用組成物の取り扱い性をより高められる。溶媒の含有量が上記上限値以下であると、裏面保護膜形成用組成物の硬化性をより高められる。 (solvent)
The composition for forming a back surface protective film preferably further contains a solvent. The composition for forming a back surface protective film containing a solvent has good handleability.
The solvent is not particularly limited, but preferred ones are, for example, hydrocarbons such as toluene and xylene; alcohols such as methanol, ethanol, 2-propanol, isobutyl alcohol (2-methylpropan-1-ol) and 1-butanol. Examples thereof include esters such as ethyl acetate; ketones such as acetone and methyl ethyl ketone; ethers such as tetrahydrofuran; amides such as dimethylformamide and N-methylpyrrolidone (compounds having an amide bond).
The solvent contained in the back surface protective film forming composition may be only one type, may be two or more types, and when two or more types are used, the combination and ratio thereof can be arbitrarily selected.
The content of the solvent is preferably 5 to 95% by mass, more preferably 7 to 93% by mass, still more preferably 10 to 90% by mass, based on the total mass of the composition for forming the back surface protective film. When the content of the solvent is at least the above lower limit value, the handleability of the back surface protective film forming composition can be further improved. When the content of the solvent is not more than the above upper limit value, the curability of the back surface protective film forming composition can be further enhanced.
裏面保護膜形成用組成物は、さらに溶媒を含有することが好ましい。溶媒を含有する裏面保護膜形成用組成物は、取り扱い性が良好となる。
前記溶媒は特に限定されないが、好ましいものとしては、例えば、トルエン、キシレン等の炭化水素;メタノール、エタノール、2-プロパノール、イソブチルアルコール(2-メチルプロパン-1-オール)、1-ブタノール等のアルコール;酢酸エチル等のエステル;アセトン、メチルエチルケトン等のケトン;テトラヒドロフラン等のエーテル;ジメチルホルムアミド、N-メチルピロリドン等のアミド(アミド結合を有する化合物)等が挙げられる。
裏面保護膜形成用組成物が含有する溶媒は、1種のみでもよいし、2種以上でもよく、2種以上である場合、それらの組み合わせ及び比率は任意に選択できる。
溶媒の含有量は、裏面保護膜形成用組成物の総質量に対して、5~95質量%が好ましく、7~93質量%がより好ましく、10~90質量%がさらに好ましい。溶媒の含有量が上記下限値以上であると、裏面保護膜形成用組成物の取り扱い性をより高められる。溶媒の含有量が上記上限値以下であると、裏面保護膜形成用組成物の硬化性をより高められる。 (solvent)
The composition for forming a back surface protective film preferably further contains a solvent. The composition for forming a back surface protective film containing a solvent has good handleability.
The solvent is not particularly limited, but preferred ones are, for example, hydrocarbons such as toluene and xylene; alcohols such as methanol, ethanol, 2-propanol, isobutyl alcohol (2-methylpropan-1-ol) and 1-butanol. Examples thereof include esters such as ethyl acetate; ketones such as acetone and methyl ethyl ketone; ethers such as tetrahydrofuran; amides such as dimethylformamide and N-methylpyrrolidone (compounds having an amide bond).
The solvent contained in the back surface protective film forming composition may be only one type, may be two or more types, and when two or more types are used, the combination and ratio thereof can be arbitrarily selected.
The content of the solvent is preferably 5 to 95% by mass, more preferably 7 to 93% by mass, still more preferably 10 to 90% by mass, based on the total mass of the composition for forming the back surface protective film. When the content of the solvent is at least the above lower limit value, the handleability of the back surface protective film forming composition can be further improved. When the content of the solvent is not more than the above upper limit value, the curability of the back surface protective film forming composition can be further enhanced.
裏面保護膜形成用組成物が含有する溶媒は、裏面保護膜形成用組成物中の含有成分をより均一に混合できる点から、メチルエチルケトン等であることが好ましい。
The solvent contained in the back surface protective film forming composition is preferably methyl ethyl ketone or the like from the viewpoint that the components contained in the back surface protective film forming composition can be mixed more uniformly.
上記のような各成分からなる裏面保護膜形成用組成物を、塗布し、乾燥させて得られる裏面保護膜形成用フィルムは、接着性と硬化性とを有し、未硬化状態ではワーク(半導体ウエハやチップ等)に押圧することで容易に接着する。押圧する際に、裏面保護膜形成用フィルムを加熱しながら貼付してもよい。そして硬化を経て最終的には耐衝撃性の高い裏面保護膜を与えることができ、接着強度にも優れ、厳しい高温度高湿度条件下においても十分な保護機能を保持し得る。なお、裏面保護膜形成用フィルムは単層構造であってもよく、また上記成分を含む層を1層以上含む限りにおいて多層構造であってもよい。
The back surface protective film forming film obtained by applying and drying the back surface protective film forming composition composed of the above components has adhesiveness and curability, and is a work (semiconductor) in an uncured state. It can be easily adhered by pressing it against a wafer, chip, etc.). When pressing, the back surface protective film forming film may be attached while being heated. After curing, a back surface protective film having high impact resistance can be finally provided, the adhesive strength is excellent, and a sufficient protective function can be maintained even under severe high temperature and high humidity conditions. The back surface protective film forming film may have a single-layer structure, or may have a multi-layer structure as long as it contains one or more layers containing the above components.
(裏面保護膜形成用組成物の製造方法)
裏面保護膜形成用組成物は、これを構成するための各成分を配合することで得られる。
各成分の配合時における添加順序は特に限定されず、2種以上の成分を同時に添加してもよい。
溶媒を用いる場合には、溶媒を溶媒以外のいずれかの配合成分と混合してこの配合成分を予め希釈しておくことで用いてもよいし、溶媒以外のいずれかの配合成分を予め希釈しておくことなく、溶媒をこれら配合成分と混合することで用いてもよい。
配合時に各成分を混合する方法は特に限定されず、撹拌子又は撹拌翼等を回転させて混合する方法;ミキサーを用いて混合する方法;超音波を加えて混合する方法等、公知の方法から適宜選択すればよい。
各成分の添加及び混合時の温度並びに時間は、各配合成分が劣化しない限り特に限定されず、適宜調節すればよいが、温度は15~30℃であることが好ましい。 (Manufacturing method of composition for forming back surface protective film)
The composition for forming a back surface protective film can be obtained by blending each component for forming the composition.
The order of addition of each component at the time of blending is not particularly limited, and two or more kinds of components may be added at the same time.
When a solvent is used, it may be used by mixing the solvent with any compounding component other than the solvent and diluting the compounding component in advance, or diluting any of the compounding components other than the solvent in advance. You may use it by mixing the solvent with these compounding components without leaving.
The method of mixing each component at the time of blending is not particularly limited, and from known methods such as a method of rotating a stirrer or a stirring blade to mix; a method of mixing using a mixer; a method of adding ultrasonic waves to mix. It may be selected as appropriate.
The temperature and time at the time of adding and mixing each component are not particularly limited as long as each compounding component does not deteriorate, and may be appropriately adjusted, but the temperature is preferably 15 to 30 ° C.
裏面保護膜形成用組成物は、これを構成するための各成分を配合することで得られる。
各成分の配合時における添加順序は特に限定されず、2種以上の成分を同時に添加してもよい。
溶媒を用いる場合には、溶媒を溶媒以外のいずれかの配合成分と混合してこの配合成分を予め希釈しておくことで用いてもよいし、溶媒以外のいずれかの配合成分を予め希釈しておくことなく、溶媒をこれら配合成分と混合することで用いてもよい。
配合時に各成分を混合する方法は特に限定されず、撹拌子又は撹拌翼等を回転させて混合する方法;ミキサーを用いて混合する方法;超音波を加えて混合する方法等、公知の方法から適宜選択すればよい。
各成分の添加及び混合時の温度並びに時間は、各配合成分が劣化しない限り特に限定されず、適宜調節すればよいが、温度は15~30℃であることが好ましい。 (Manufacturing method of composition for forming back surface protective film)
The composition for forming a back surface protective film can be obtained by blending each component for forming the composition.
The order of addition of each component at the time of blending is not particularly limited, and two or more kinds of components may be added at the same time.
When a solvent is used, it may be used by mixing the solvent with any compounding component other than the solvent and diluting the compounding component in advance, or diluting any of the compounding components other than the solvent in advance. You may use it by mixing the solvent with these compounding components without leaving.
The method of mixing each component at the time of blending is not particularly limited, and from known methods such as a method of rotating a stirrer or a stirring blade to mix; a method of mixing using a mixer; a method of adding ultrasonic waves to mix. It may be selected as appropriate.
The temperature and time at the time of adding and mixing each component are not particularly limited as long as each compounding component does not deteriorate, and may be appropriately adjusted, but the temperature is preferably 15 to 30 ° C.
(裏面保護膜形成用フィルムの製造方法)
前記裏面保護膜形成用フィルムは、その構成材料を含有する裏面保護膜形成用組成物を用いて形成できる。例えば、裏面保護膜形成用フィルムの形成対象面に裏面保護膜形成用組成物を塗工し、必要に応じて乾燥させることで、目的とする部位に裏面保護膜形成用フィルムを形成できる。裏面保護膜形成用組成物中の、常温で気化しない成分同士の含有量の比率は、通常、裏面保護膜形成用フィルムの前記成分同士の含有量の比率と同じとなる。なお、本明細書において、「常温」とは、特に冷やしたり、熱したりしない温度、すなわち平常の温度を意味し、例えば、15~25℃の温度等が挙げられる。 (Manufacturing method of film for forming backside protective film)
The back surface protective film forming film can be formed by using a back surface protective film forming composition containing the constituent material. For example, the back surface protective film forming film can be formed on a target portion by applying the back surface protective film forming composition to the surface to be formed of the back surface protective film forming film and drying it if necessary. The ratio of the contents of the components that do not vaporize at room temperature in the composition for forming the back surface protective film is usually the same as the ratio of the contents of the components of the film for forming the back surface protective film. In addition, in this specification, "room temperature" means a temperature which is not particularly cooled or heated, that is, a normal temperature, and examples thereof include a temperature of 15 to 25 ° C.
前記裏面保護膜形成用フィルムは、その構成材料を含有する裏面保護膜形成用組成物を用いて形成できる。例えば、裏面保護膜形成用フィルムの形成対象面に裏面保護膜形成用組成物を塗工し、必要に応じて乾燥させることで、目的とする部位に裏面保護膜形成用フィルムを形成できる。裏面保護膜形成用組成物中の、常温で気化しない成分同士の含有量の比率は、通常、裏面保護膜形成用フィルムの前記成分同士の含有量の比率と同じとなる。なお、本明細書において、「常温」とは、特に冷やしたり、熱したりしない温度、すなわち平常の温度を意味し、例えば、15~25℃の温度等が挙げられる。 (Manufacturing method of film for forming backside protective film)
The back surface protective film forming film can be formed by using a back surface protective film forming composition containing the constituent material. For example, the back surface protective film forming film can be formed on a target portion by applying the back surface protective film forming composition to the surface to be formed of the back surface protective film forming film and drying it if necessary. The ratio of the contents of the components that do not vaporize at room temperature in the composition for forming the back surface protective film is usually the same as the ratio of the contents of the components of the film for forming the back surface protective film. In addition, in this specification, "room temperature" means a temperature which is not particularly cooled or heated, that is, a normal temperature, and examples thereof include a temperature of 15 to 25 ° C.
裏面保護膜形成用組成物の塗工は、公知の方法で行えばよく、例えば、エアーナイフコーター、ブレードコーター、バーコーター、グラビアコーター、ロールコーター、ロールナイフコーター、カーテンコーター、ダイコーター、ナイフコーター、スクリーンコーター、マイヤーバーコーター、キスコーター等の各種コーターを用いる方法が挙げられる。
The composition for forming the back surface protective film may be applied by a known method, for example, an air knife coater, a blade coater, a bar coater, a gravure coater, a roll coater, a roll knife coater, a curtain coater, a die coater, and a knife coater. , A method using various coaters such as a screen coater, a Meyer bar coater, and a knife coater.
裏面保護膜形成用組成物の乾燥条件は、特に限定されないが、裏面保護膜形成用組成物は、後述する溶媒を含有している場合、加熱乾燥させることが好ましい。溶媒を含有する裏面保護膜形成用組成物は、例えば、70~130℃で10秒~5分の条件で乾燥させることが好ましい。溶媒を含有する裏面保護膜形成用組成物は、例えば、80~130℃で20秒~4分の条件で乾燥させることがより好ましく、90~130℃で30秒~3分の条件で乾燥させることがさらに好ましい。加熱乾燥させる際の加熱温度が上記下限値以上であると、裏面保護膜形成用組成物を十分に硬化できる。加熱乾燥させる際の加熱温度が上記上限値以下であると、ワークの劣化を抑制できる。加熱乾燥させる際の乾燥時間が上記下限値以上であると、裏面保護膜形成用組成物を十分に硬化できる。加熱乾燥させる際の乾燥時間が上記上限値以下であると、裏面保護膜形成用フィルムの生産性を向上できる。
The drying conditions of the back surface protective film forming composition are not particularly limited, but when the back surface protective film forming composition contains a solvent described later, it is preferable to heat dry the composition. The composition for forming a back surface protective film containing a solvent is preferably dried at 70 to 130 ° C. for 10 seconds to 5 minutes, for example. The composition for forming a back surface protective film containing a solvent is more preferably dried at 80 to 130 ° C. for 20 seconds to 4 minutes, and dried at 90 to 130 ° C. for 30 seconds to 3 minutes. Is even more preferable. When the heating temperature at the time of heating and drying is at least the above lower limit value, the composition for forming a back surface protective film can be sufficiently cured. When the heating temperature at the time of heating and drying is not more than the above upper limit value, deterioration of the work can be suppressed. When the drying time for heat-drying is at least the above lower limit value, the composition for forming a back surface protective film can be sufficiently cured. When the drying time at the time of heating and drying is not more than the above upper limit value, the productivity of the back surface protective film forming film can be improved.
〇保護層
本実施形態の裏面保護膜形成用複合体において、保護層は、裏面保護膜形成用フィルムを保護する層として用いられる。具体的には、半導体基板の裏面に、裏面保護膜形成用複合体中の裏面保護膜形成用フィルムを貼付して、前記半導体基板と、前記裏面保護膜形成用フィルムと、前記保護層とがこの順に積層された第二積層体を得る第一の積層工程と、前記第二積層体の前記保護層に、支持シートを貼付して、前記半導体基板と、前記裏面保護膜形成用フィルムと、前記保護層と、前記支持シートとがこの順に積層された第三積層体を得る第二の積層工程と、前記第一の積層工程から前記第二の積層工程に前記第二積層体を搬送する搬送工程とを含む第三積層体の製造方法における前記搬送工程において、保護層は、(硬化前の)裏面保護膜形成用フィルムの汚染及び変形を防止する。 〇 Protective layer In the back surface protective film forming composite of the present embodiment, the protective layer is used as a layer for protecting the back surface protective film forming film. Specifically, the back surface protective film forming film in the back surface protective film forming composite is attached to the back surface of the semiconductor substrate, and the semiconductor substrate, the back surface protective film forming film, and the protective layer are formed. The first laminating step of obtaining the second laminated body laminated in this order, the semiconductor substrate, the back surface protective film forming film, and the back surface protective film forming film by attaching a support sheet to the protective layer of the second laminated body. The second laminating body is conveyed from the first laminating step to the second laminating step in a second laminating step of obtaining a third laminated body in which the protective layer and the support sheet are laminated in this order. In the transport step in the method for producing the third laminate including the transport step, the protective layer prevents contamination and deformation of the back surface protective film forming film (before curing).
本実施形態の裏面保護膜形成用複合体において、保護層は、裏面保護膜形成用フィルムを保護する層として用いられる。具体的には、半導体基板の裏面に、裏面保護膜形成用複合体中の裏面保護膜形成用フィルムを貼付して、前記半導体基板と、前記裏面保護膜形成用フィルムと、前記保護層とがこの順に積層された第二積層体を得る第一の積層工程と、前記第二積層体の前記保護層に、支持シートを貼付して、前記半導体基板と、前記裏面保護膜形成用フィルムと、前記保護層と、前記支持シートとがこの順に積層された第三積層体を得る第二の積層工程と、前記第一の積層工程から前記第二の積層工程に前記第二積層体を搬送する搬送工程とを含む第三積層体の製造方法における前記搬送工程において、保護層は、(硬化前の)裏面保護膜形成用フィルムの汚染及び変形を防止する。 〇 Protective layer In the back surface protective film forming composite of the present embodiment, the protective layer is used as a layer for protecting the back surface protective film forming film. Specifically, the back surface protective film forming film in the back surface protective film forming composite is attached to the back surface of the semiconductor substrate, and the semiconductor substrate, the back surface protective film forming film, and the protective layer are formed. The first laminating step of obtaining the second laminated body laminated in this order, the semiconductor substrate, the back surface protective film forming film, and the back surface protective film forming film by attaching a support sheet to the protective layer of the second laminated body. The second laminating body is conveyed from the first laminating step to the second laminating step in a second laminating step of obtaining a third laminated body in which the protective layer and the support sheet are laminated in this order. In the transport step in the method for producing the third laminate including the transport step, the protective layer prevents contamination and deformation of the back surface protective film forming film (before curing).
また、半導体基板の裏面に、裏面保護膜形成用複合体中の裏面保護膜形成用フィルムを貼付して、前記半導体基板と、前記裏面保護膜形成用フィルムと、前記保護層とがこの順に積層された第二積層体を得る第一の積層工程と、前記第二積層体の前記裏面保護膜形成用フィルムを硬化させて裏面保護膜とする硬化工程と、前記第一の積層工程から前記硬化工程に前記第二積層体を搬送する搬送工程とを含む、前記半導体基板と、裏面保護膜と、前記保護層とがこの順に積層された第一積層体の製造方法における前記搬送工程において、保護層は、(硬化前の)裏面保護膜形成用フィルムの汚染及び変形を防止する。
Further, the back surface protective film forming film in the back surface protective film forming composite is attached to the back surface of the semiconductor substrate, and the semiconductor substrate, the back surface protective film forming film, and the protective layer are laminated in this order. The first laminating step of obtaining the second laminated body, the curing step of curing the back surface protective film forming film of the second laminated body to form the back surface protective film, and the curing from the first laminating step. In the transport step in the method for manufacturing the first laminate in which the semiconductor substrate, the back surface protective film, and the protective layer are laminated in this order, the step includes a transport step of transporting the second laminate. The layer prevents contamination and deformation of the back surface protective film forming film (before curing).
保護層の厚さは特に限定されないが、1~100μmであることが好ましく、2~95μmであることがより好ましく、3~90μmであることがさらに好ましい。保護層の厚さが上記下限値以上であると、裏面保護膜形成用フィルムの汚染及び変形をより抑制できる。保護層の厚さが上記上限値以下であると、裏面保護膜形成用複合体の取り扱い性をより高められる。
保護層の厚さは、例えば、裏面保護膜形成用複合体を厚さ方向に切断した切断面を顕微鏡等を用いて観察することにより求められる。 The thickness of the protective layer is not particularly limited, but is preferably 1 to 100 μm, more preferably 2 to 95 μm, and even more preferably 3 to 90 μm. When the thickness of the protective layer is at least the above lower limit value, contamination and deformation of the back surface protective film forming film can be further suppressed. When the thickness of the protective layer is not more than the above upper limit value, the handleability of the back surface protective film forming complex can be further improved.
The thickness of the protective layer can be determined, for example, by observing the cut surface obtained by cutting the back surface protective film forming complex in the thickness direction using a microscope or the like.
保護層の厚さは、例えば、裏面保護膜形成用複合体を厚さ方向に切断した切断面を顕微鏡等を用いて観察することにより求められる。 The thickness of the protective layer is not particularly limited, but is preferably 1 to 100 μm, more preferably 2 to 95 μm, and even more preferably 3 to 90 μm. When the thickness of the protective layer is at least the above lower limit value, contamination and deformation of the back surface protective film forming film can be further suppressed. When the thickness of the protective layer is not more than the above upper limit value, the handleability of the back surface protective film forming complex can be further improved.
The thickness of the protective layer can be determined, for example, by observing the cut surface obtained by cutting the back surface protective film forming complex in the thickness direction using a microscope or the like.
保護層としては、特に限定されないが、例えば、エネルギー線硬化性フィルム、基材が例として挙げられる。エネルギー線硬化性フィルムとしては、裏面保護膜形成用フィルムで説明したエネルギー線硬化性フィルムを硬化させたものを用いることができる。保護層として、未硬化のエネルギー線硬化性フィルムを用いる場合、裏面保護膜形成用フィルムとは異なる種類のフィルムを用いることが好ましい。また、保護層としては、以下の保護層用エネルギー線硬化性フィルムを用いることもできる。以下、保護層として使用可能な保護層用エネルギー線硬化性フィルム及び保護層用基材について説明する。
The protective layer is not particularly limited, and examples thereof include an energy ray-curable film and a base material. As the energy ray-curable film, a cured energy ray-curable film described in the back surface protective film forming film can be used. When an uncured energy ray-curable film is used as the protective layer, it is preferable to use a film of a different type from the film for forming the back surface protective film. Further, as the protective layer, the following energy ray-curable film for the protective layer can also be used. Hereinafter, the energy ray-curable film for the protective layer and the base material for the protective layer that can be used as the protective layer will be described.
(保護層用エネルギー線硬化性フィルム)
裏面保護膜形成用フィルムで説明したエネルギー線硬化性フィルム以外の保護層用エネルギー線硬化性フィルムは特に限定されないが、例えば、エネルギー線硬化型含ウレタン樹脂を用いることができる。
エネルギー線硬化型含ウレタン樹脂としては、ウレタン(メタ)アクリレート樹脂やウレタンポリマーと、エネルギー線重合性モノマーとを主成分とするエネルギー線硬化型樹脂が挙げられる。
なお、保護層用エネルギー線硬化性フィルムは、本実施形態の第一の積層工程の前に硬化しておくことが好ましい。 (Energy ray-curable film for protective layer)
The energy ray-curable film for the protective layer other than the energy ray-curable film described in the back surface protective film forming film is not particularly limited, and for example, an energy ray-curable urethane-containing resin can be used.
Examples of the energy ray-curable urethane-containing resin include an energy ray-curable resin containing a urethane (meth) acrylate resin or a urethane polymer and an energy ray-polymerizable monomer as main components.
The energy ray-curable film for the protective layer is preferably cured before the first laminating step of the present embodiment.
裏面保護膜形成用フィルムで説明したエネルギー線硬化性フィルム以外の保護層用エネルギー線硬化性フィルムは特に限定されないが、例えば、エネルギー線硬化型含ウレタン樹脂を用いることができる。
エネルギー線硬化型含ウレタン樹脂としては、ウレタン(メタ)アクリレート樹脂やウレタンポリマーと、エネルギー線重合性モノマーとを主成分とするエネルギー線硬化型樹脂が挙げられる。
なお、保護層用エネルギー線硬化性フィルムは、本実施形態の第一の積層工程の前に硬化しておくことが好ましい。 (Energy ray-curable film for protective layer)
The energy ray-curable film for the protective layer other than the energy ray-curable film described in the back surface protective film forming film is not particularly limited, and for example, an energy ray-curable urethane-containing resin can be used.
Examples of the energy ray-curable urethane-containing resin include an energy ray-curable resin containing a urethane (meth) acrylate resin or a urethane polymer and an energy ray-polymerizable monomer as main components.
The energy ray-curable film for the protective layer is preferably cured before the first laminating step of the present embodiment.
(基材)
保護層として使用可能な基材としては、樹脂フィルムが好ましい。
前記樹脂フィルムとしては、例えば、低密度ポリエチレン(LDPE)フィルムや直鎖低密度ポリエチレン(LLDPE)フィルム等のポリエチレンフィルム、エチレン・プロピレン共重合体フィルム、ポリプロピレンフィルム、ポリブテンフィルム、ポリブタジエンフィルム、ポリメチルペンテンフィルム、ポリ塩化ビニルフィルム、塩化ビニル共重合体フィルム、ポリエチレンテレフタレートフィルム、ポリエチレンナフタレートフィルム、ポリブチレンテレフタレートフィルム、ポリウレタンフィルム、エチレン・酢酸ビニル共重合体フィルム、アイオノマー樹脂フィルム、エチレン・(メタ)アクリル酸共重合体フィルム、エチレン・(メタ)アクリル酸エステル共重合体フィルム、ポリスチレンフィルム、ポリカーボネートフィルム、ポリイミドフィルム、フッ素樹脂フィルム等が挙げられる。
本発明の一態様で用いる基材は、1種類の樹脂フィルムからなる単層フィルムであってもよく、2種類以上の樹脂フィルムを積層した積層フィルムであってもよい。
また、本発明の一態様においては、上述の樹脂フィルム等の基材の表面に、表面処理を施したシートを保護層として用いてもよい。 (Base material)
A resin film is preferable as a base material that can be used as a protective layer.
Examples of the resin film include polyethylene films such as low-density polyethylene (LDPE) films and linear low-density polyethylene (LLDPE) films, ethylene / propylene copolymer films, polypropylene films, polybutene films, polybutadiene films, and polymethylpentene. Film, polyvinyl chloride film, vinyl chloride copolymer film, polyethylene terephthalate film, polyethylene naphthalate film, polybutylene terephthalate film, polyurethane film, ethylene / vinyl acetate copolymer film, ionomer resin film, ethylene / (meth) acrylic Examples thereof include acid copolymer films, ethylene / (meth) acrylic acid ester copolymer films, polystyrene films, polycarbonate films, polyimide films, and fluororesin films.
The base material used in one aspect of the present invention may be a single-layer film composed of one type of resin film, or may be a laminated film in which two or more types of resin films are laminated.
Further, in one aspect of the present invention, a sheet obtained by subjecting the surface of a base material such as the above-mentioned resin film to a surface treatment may be used as a protective layer.
保護層として使用可能な基材としては、樹脂フィルムが好ましい。
前記樹脂フィルムとしては、例えば、低密度ポリエチレン(LDPE)フィルムや直鎖低密度ポリエチレン(LLDPE)フィルム等のポリエチレンフィルム、エチレン・プロピレン共重合体フィルム、ポリプロピレンフィルム、ポリブテンフィルム、ポリブタジエンフィルム、ポリメチルペンテンフィルム、ポリ塩化ビニルフィルム、塩化ビニル共重合体フィルム、ポリエチレンテレフタレートフィルム、ポリエチレンナフタレートフィルム、ポリブチレンテレフタレートフィルム、ポリウレタンフィルム、エチレン・酢酸ビニル共重合体フィルム、アイオノマー樹脂フィルム、エチレン・(メタ)アクリル酸共重合体フィルム、エチレン・(メタ)アクリル酸エステル共重合体フィルム、ポリスチレンフィルム、ポリカーボネートフィルム、ポリイミドフィルム、フッ素樹脂フィルム等が挙げられる。
本発明の一態様で用いる基材は、1種類の樹脂フィルムからなる単層フィルムであってもよく、2種類以上の樹脂フィルムを積層した積層フィルムであってもよい。
また、本発明の一態様においては、上述の樹脂フィルム等の基材の表面に、表面処理を施したシートを保護層として用いてもよい。 (Base material)
A resin film is preferable as a base material that can be used as a protective layer.
Examples of the resin film include polyethylene films such as low-density polyethylene (LDPE) films and linear low-density polyethylene (LLDPE) films, ethylene / propylene copolymer films, polypropylene films, polybutene films, polybutadiene films, and polymethylpentene. Film, polyvinyl chloride film, vinyl chloride copolymer film, polyethylene terephthalate film, polyethylene naphthalate film, polybutylene terephthalate film, polyurethane film, ethylene / vinyl acetate copolymer film, ionomer resin film, ethylene / (meth) acrylic Examples thereof include acid copolymer films, ethylene / (meth) acrylic acid ester copolymer films, polystyrene films, polycarbonate films, polyimide films, and fluororesin films.
The base material used in one aspect of the present invention may be a single-layer film composed of one type of resin film, or may be a laminated film in which two or more types of resin films are laminated.
Further, in one aspect of the present invention, a sheet obtained by subjecting the surface of a base material such as the above-mentioned resin film to a surface treatment may be used as a protective layer.
これらの樹脂フィルムは、架橋フィルムであってもよい。
また、これらの樹脂フィルムを着色したもの、又は印刷を施したもの等も使用できる。さらに、樹脂フィルムは、熱可塑性樹脂を押出形成によりシート化したものであってもよく、延伸されたものであってもよく、硬化性樹脂を所定手段により薄膜化及び硬化してシート化したものが使われてもよい。 These resin films may be crosslinked films.
Further, colored resin films or printed ones can also be used. Further, the resin film may be a sheet obtained by extruding a thermoplastic resin or may be a stretched resin film, or a curable resin thinned and cured by a predetermined means to form a sheet. May be used.
また、これらの樹脂フィルムを着色したもの、又は印刷を施したもの等も使用できる。さらに、樹脂フィルムは、熱可塑性樹脂を押出形成によりシート化したものであってもよく、延伸されたものであってもよく、硬化性樹脂を所定手段により薄膜化及び硬化してシート化したものが使われてもよい。 These resin films may be crosslinked films.
Further, colored resin films or printed ones can also be used. Further, the resin film may be a sheet obtained by extruding a thermoplastic resin or may be a stretched resin film, or a curable resin thinned and cured by a predetermined means to form a sheet. May be used.
これらの樹脂フィルムの中でも、耐熱性に優れ、ガラス転移温度が70℃以上の基材が好ましい。
なお、耐熱性に優れるフィルムとしては、例えば、ポリエステルフィルム、ポリカーボネートフィルム、ポリフェニレンサルファイドフィルム、シクロオレフィン樹脂フィルム、ポリイミド樹脂フィルム、紫外線硬化樹脂をキャスト製膜し硬化したフィルム、及びこれらの2種以上の積層体などを挙げることができる。 Among these resin films, a substrate having excellent heat resistance and a glass transition temperature of 70 ° C. or higher is preferable.
Examples of the film having excellent heat resistance include a polyester film, a polycarbonate film, a polyphenylene sulfide film, a cycloolefin resin film, a polyimide resin film, a film formed by casting and curing an ultraviolet curable resin, and two or more of these. A laminated body and the like can be mentioned.
なお、耐熱性に優れるフィルムとしては、例えば、ポリエステルフィルム、ポリカーボネートフィルム、ポリフェニレンサルファイドフィルム、シクロオレフィン樹脂フィルム、ポリイミド樹脂フィルム、紫外線硬化樹脂をキャスト製膜し硬化したフィルム、及びこれらの2種以上の積層体などを挙げることができる。 Among these resin films, a substrate having excellent heat resistance and a glass transition temperature of 70 ° C. or higher is preferable.
Examples of the film having excellent heat resistance include a polyester film, a polycarbonate film, a polyphenylene sulfide film, a cycloolefin resin film, a polyimide resin film, a film formed by casting and curing an ultraviolet curable resin, and two or more of these. A laminated body and the like can be mentioned.
基材を用いる場合、基材のみを保護層として用いてもよく、基材上に粘着剤層又は剥離剤層を有するシートを保護層として用いてもよい。保護層として、基材上に粘着剤層又は剥離剤層を有するシートを用いる場合、裏面保護膜形成用複合体において、粘着剤層又は剥離剤層は、裏面保護膜形成用フィルムと基材の間に積層されていることが好ましい。
When a base material is used, only the base material may be used as the protective layer, or a sheet having an adhesive layer or a release agent layer on the base material may be used as the protective layer. When a sheet having an adhesive layer or a release agent layer on the base material is used as the protective layer, in the back surface protective film forming composite, the pressure-sensitive adhesive layer or the release agent layer is the back surface protective film forming film and the base material. It is preferable that they are laminated between them.
前記粘着剤層は、後述の支持シートで説明する粘着剤層の中から、基材、裏面保護膜形成用フィルムの種類に合わせて適宜選択することができる。
前記剥離剤層は、シリコーン系、オレフィン系、長鎖アルキル系、アルキド系、フッ素系等の剥離剤層の中から、基材、裏面保護膜形成用フィルムの種類に合わせて適宜選択することができる。 The pressure-sensitive adhesive layer can be appropriately selected from the pressure-sensitive adhesive layers described in the support sheet described later according to the type of the base material and the film for forming the back surface protective film.
The release agent layer may be appropriately selected from among silicone-based, olefin-based, long-chain alkyl-based, alkyd-based, and fluorine-based release agent layers according to the type of the base material and the film for forming the back surface protective film. can.
前記剥離剤層は、シリコーン系、オレフィン系、長鎖アルキル系、アルキド系、フッ素系等の剥離剤層の中から、基材、裏面保護膜形成用フィルムの種類に合わせて適宜選択することができる。 The pressure-sensitive adhesive layer can be appropriately selected from the pressure-sensitive adhesive layers described in the support sheet described later according to the type of the base material and the film for forming the back surface protective film.
The release agent layer may be appropriately selected from among silicone-based, olefin-based, long-chain alkyl-based, alkyd-based, and fluorine-based release agent layers according to the type of the base material and the film for forming the back surface protective film. can.
〇剥離フィルム
本実施形態の裏面保護膜形成用複合体2における剥離フィルム151としては、プロテクトフィルムが好ましい。プロテクトフィルムは、通常基材フィルムとその上に積層される粘着剤層とで構成される。基材フィルムは、例えば熱可塑性樹脂で構成することができる。熱可塑性樹脂としては、ポリエチレン系樹脂、ポリプロピレン系樹脂等のポリオレフィン系樹脂;ポリエチレンテレフタレート、ポリエチレンナフタレート等のポリエステル系樹脂;ポリカーボネート系樹脂;(メタ)アクリル系樹脂が例として挙げられる。粘着剤層としては、アクリル系、ゴム系、ウレタン系、シリコーン系で構成することができる。本実施形態の剥離フィルムは、貼付後、再剥離性を有する。 〇 Release film As therelease film 151 in the back surface protective film forming composite 2 of the present embodiment, a protective film is preferable. The protective film is usually composed of a base film and an adhesive layer laminated on the base film. The base film can be made of, for example, a thermoplastic resin. Examples of the thermoplastic resin include polyolefin resins such as polyethylene resins and polypropylene resins; polyester resins such as polyethylene terephthalate and polyethylene naphthalate; polycarbonate resins; (meth) acrylic resins. The pressure-sensitive adhesive layer can be made of an acrylic type, a rubber type, a urethane type, or a silicone type. The release film of the present embodiment has re-peelability after being attached.
本実施形態の裏面保護膜形成用複合体2における剥離フィルム151としては、プロテクトフィルムが好ましい。プロテクトフィルムは、通常基材フィルムとその上に積層される粘着剤層とで構成される。基材フィルムは、例えば熱可塑性樹脂で構成することができる。熱可塑性樹脂としては、ポリエチレン系樹脂、ポリプロピレン系樹脂等のポリオレフィン系樹脂;ポリエチレンテレフタレート、ポリエチレンナフタレート等のポリエステル系樹脂;ポリカーボネート系樹脂;(メタ)アクリル系樹脂が例として挙げられる。粘着剤層としては、アクリル系、ゴム系、ウレタン系、シリコーン系で構成することができる。本実施形態の剥離フィルムは、貼付後、再剥離性を有する。 〇 Release film As the
<<第三積層体の製造方法>>
図6A~Eは、裏面保護膜形成用複合体1を使用した第三積層体の製造方法の実施形態の一例を模式的に示す概略断面図である。本実施形態の第三積層体の製造方法は、ワーク14と、裏面保護膜形成用フィルム13と、保護層12と、支持シート10とが、この順に積層された第三積層体25の製造方法であって、ワーク14の裏面14bに、裏面保護膜形成用複合体1の裏面保護膜形成用フィルム13を貼付して、ワーク14と、裏面保護膜形成用フィルム13と、保護層12とがこの順に積層された第二積層体24を得る第一の積層工程(図6B及び図6C)と、第二積層体24に、支持シート10を貼付する第二の積層工程に搬送する搬送工程(図6C~D)と、保護層12に、支持シート10を貼付する第二の積層工程(図6D及び図6E)と、をこの順に含む。 << Manufacturing method of the third laminate >>
6A to 6E are schematic cross-sectional views schematically showing an example of an embodiment of a method for manufacturing a third laminated body using the back surface protectivefilm forming complex 1. The method for manufacturing the third laminated body of the present embodiment is a method for manufacturing the third laminated body 25 in which the work 14, the back surface protective film forming film 13, the protective layer 12, and the support sheet 10 are laminated in this order. The back surface protective film forming film 13 of the back surface protective film forming composite 1 is attached to the back surface 14b of the work 14, and the work 14, the back surface protective film forming film 13, and the protective layer 12 are attached to each other. A first laminating step (FIGS. 6B and 6C) for obtaining a second laminated body 24 laminated in this order, and a transporting step of transporting the support sheet 10 to the second laminating body 24 (FIGS. 6B and 6C). 6C to 6D) and a second laminating step (FIGS. 6D and 6E) of attaching the support sheet 10 to the protective layer 12 are included in this order.
図6A~Eは、裏面保護膜形成用複合体1を使用した第三積層体の製造方法の実施形態の一例を模式的に示す概略断面図である。本実施形態の第三積層体の製造方法は、ワーク14と、裏面保護膜形成用フィルム13と、保護層12と、支持シート10とが、この順に積層された第三積層体25の製造方法であって、ワーク14の裏面14bに、裏面保護膜形成用複合体1の裏面保護膜形成用フィルム13を貼付して、ワーク14と、裏面保護膜形成用フィルム13と、保護層12とがこの順に積層された第二積層体24を得る第一の積層工程(図6B及び図6C)と、第二積層体24に、支持シート10を貼付する第二の積層工程に搬送する搬送工程(図6C~D)と、保護層12に、支持シート10を貼付する第二の積層工程(図6D及び図6E)と、をこの順に含む。 << Manufacturing method of the third laminate >>
6A to 6E are schematic cross-sectional views schematically showing an example of an embodiment of a method for manufacturing a third laminated body using the back surface protective
図7A~Fは、裏面保護膜形成用複合体2を使用した第三積層体の製造方法の実施形態の一例を模式的に示す概略断面図である。本実施形態の第三積層体の製造方法は、ワーク14と、裏面保護膜形成用フィルム13と、保護層12と、支持シート10とが、この順に積層された第三積層体25の製造方法であって、ワーク14の裏面14bに、裏面保護膜形成用複合体2の裏面保護膜形成用フィルム13を貼付して、ワーク14と、裏面保護膜形成用フィルム13と、保護層12と、剥離フィルム151とがこの順に積層された積層体を得る第一の積層工程(図7B及び図7C)と、前記積層体から剥離フィルム151を剥離した後、保護層12に、支持シート10を貼付する第二の積層工程に搬送する搬送工程(図7C~E)と、保護層12に、支持シート10を貼付する第二の積層工程(図7E及び図7F)と、をこの順に含む。
7A to 7F are schematic cross-sectional views schematically showing an example of an embodiment of a method for manufacturing a third laminated body using the back surface protective film forming complex 2. The method for manufacturing the third laminated body of the present embodiment is a method for manufacturing the third laminated body 25 in which the work 14, the back surface protective film forming film 13, the protective layer 12, and the support sheet 10 are laminated in this order. The back surface protective film forming film 13 of the back surface protective film forming composite 2 is attached to the back surface 14b of the work 14, and the work 14, the back surface protective film forming film 13, the protective layer 12, and the protective layer 12 are attached. The support sheet 10 is attached to the protective layer 12 after the first laminating step (FIGS. 7B and 7C) of obtaining a laminate in which the release film 151 is laminated in this order and the release film 151 from the laminate. The transfer step (FIGS. 7C to 7E) of transporting to the second laminating step and the second laminating step (FIGS. 7E and 7F) of attaching the support sheet 10 to the protective layer 12 are included in this order.
<<第一積層体の製造方法>>
図4A~Dは、裏面保護膜形成用複合体1を使用した第一積層体の製造方法の実施形態の一例を模式的に示す概略断面図である。本実施形態の第一積層体の製造方法は、ワーク14と、裏面保護膜13’と、保護層12とが、この順に積層された第一積層体23の製造方法であって、ワーク14の裏面14bに、裏面保護膜形成用複合体1の裏面保護膜形成用フィルム13を貼付して、ワーク14と、裏面保護膜形成用フィルム13と、保護層12とがこの順に積層された第二積層体24を得る第一の積層工程(図4B及び図4C)と、第二積層体24を、裏面保護膜形成用フィルム13を硬化させて裏面保護膜13’とする硬化工程に搬送する搬送工程(図4C~D)と、第二積層体24の裏面保護膜形成用フィルム13を硬化させて裏面保護膜13’とする硬化工程(図4D)と、をこの順に含む。 << Manufacturing method of the first laminated body >>
4A to 4D are schematic cross-sectional views schematically showing an example of an embodiment of a method for manufacturing a first laminated body using the back surface protectivefilm forming complex 1. The method for manufacturing the first laminated body of the present embodiment is a method for manufacturing the first laminated body 23 in which the work 14, the back surface protective film 13', and the protective layer 12 are laminated in this order, and the work 14 is manufactured. The back surface protective film forming film 13 of the back surface protective film forming composite 1 was attached to the back surface 14b, and the work 14, the back surface protective film forming film 13, and the protective layer 12 were laminated in this order. Transport for transporting the second laminated body 24 to the first laminating step (FIGS. 4B and 4C) for obtaining the laminated body 24 and the curing step for curing the back surface protective film forming film 13 to form the back surface protective film 13'. The steps (FIGS. 4C to 4D) and the curing step (FIG. 4D) of curing the back surface protective film forming film 13 of the second laminated body 24 to form the back surface protective film 13'are included in this order.
図4A~Dは、裏面保護膜形成用複合体1を使用した第一積層体の製造方法の実施形態の一例を模式的に示す概略断面図である。本実施形態の第一積層体の製造方法は、ワーク14と、裏面保護膜13’と、保護層12とが、この順に積層された第一積層体23の製造方法であって、ワーク14の裏面14bに、裏面保護膜形成用複合体1の裏面保護膜形成用フィルム13を貼付して、ワーク14と、裏面保護膜形成用フィルム13と、保護層12とがこの順に積層された第二積層体24を得る第一の積層工程(図4B及び図4C)と、第二積層体24を、裏面保護膜形成用フィルム13を硬化させて裏面保護膜13’とする硬化工程に搬送する搬送工程(図4C~D)と、第二積層体24の裏面保護膜形成用フィルム13を硬化させて裏面保護膜13’とする硬化工程(図4D)と、をこの順に含む。 << Manufacturing method of the first laminated body >>
4A to 4D are schematic cross-sectional views schematically showing an example of an embodiment of a method for manufacturing a first laminated body using the back surface protective
図5A~Eは、裏面保護膜形成用複合体2を使用した第一積層体の製造方法の実施形態の一例を模式的に示す概略断面図である。本実施形態の第一積層体の製造方法は、ワーク14と、裏面保護膜13’と、保護層12とが、この順に積層された第一積層体23の製造方法であって、ワーク14の裏面14bに、裏面保護膜形成用複合体2の裏面保護膜形成用フィルム13を貼付して、ワーク14と、裏面保護膜形成用フィルム13と、保護層12と、剥離フィルム151とがこの順に積層された積層体を得る第一の積層工程(図5B及び図5C)と、前記積層体から剥離フィルム151を剥離して第二積層体24を得る工程と、第二積層体24を、裏面保護膜形成用フィルム13を硬化させて裏面保護膜13’とする硬化工程に搬送する搬送工程(図5D~E)と、第二積層体24の裏面保護膜形成用フィルム13を硬化させて裏面保護膜13’とする硬化工程(図5E)と、をこの順に含む。
5A to 5E are schematic cross-sectional views schematically showing an example of an embodiment of a method for manufacturing a first laminated body using the back surface protective film forming complex 2. The method for manufacturing the first laminated body of the present embodiment is a method for manufacturing the first laminated body 23 in which the work 14, the back surface protective film 13', and the protective layer 12 are laminated in this order, and the work 14 is manufactured. The back surface protective film forming film 13 of the back surface protective film forming composite 2 is attached to the back surface 14b, and the work 14, the back surface protective film forming film 13, the protective layer 12, and the release film 151 are attached in this order. The first laminating step (FIGS. 5B and 5C) for obtaining the laminated laminate, the step of peeling the release film 151 from the laminate to obtain the second laminate 24, and the back surface of the second laminate 24. The transport step (FIGS. 5D to E) in which the protective film forming film 13 is cured to form the back surface protective film 13', and the back surface protective film forming film 13 of the second laminated body 24 are cured to form the back surface. The curing step (FIG. 5E) of forming the protective film 13'is included in this order.
以下、第一積層体の製造方法及び第三積層体の製造方法について共通の項目について説明を行う。本実施形態において、図4A、図5A、図6A、及び図7Aに示されるワーク14として、半導体ウエハを用いている。半導体ウエハの一方の面は回路面であり、バンプが形成されている。また、半導体ウエハの回路面及びバンプが、半導体ウエハの裏面研削時に潰れたり、ウエハ裏面におけるディンプルやクラックが発生したりすることを防止するために、半導体ウエハの回路面及びバンプは、回路面保護用テープ17によって保護されている。回路面保護用テープ17は裏面研削用テープであり、ワーク14である半導体ウエハの裏面(すなわち、ワークの裏面)は研削された面である。なお、図4A~D、図5A~Eで表される第一積層体の製造方法においては図示されていないが、第一積層体の製造方法においても半導体ウエハの回路面及びバンプは、回路面保護用テープ17によって保護されていることが好ましい。この場合、図4D又は図5Eで表される硬化工程の前のいずれかの段階で、回路面保護用テープを剥離させることが好ましい。
Hereinafter, common items will be described for the manufacturing method of the first laminated body and the manufacturing method of the third laminated body. In this embodiment, a semiconductor wafer is used as the work 14 shown in FIGS. 4A, 5A, 6A, and 7A. One surface of the semiconductor wafer is a circuit surface, and bumps are formed. Further, in order to prevent the circuit surface and bumps of the semiconductor wafer from being crushed during backside grinding of the semiconductor wafer and dimples and cracks on the back surface of the wafer, the circuit surface and bumps of the semiconductor wafer are protected from the circuit surface. It is protected by a tape 17. The circuit surface protection tape 17 is a back surface grinding tape, and the back surface of the semiconductor wafer, which is the work 14, (that is, the back surface of the work) is a ground surface. Although not shown in the method for manufacturing the first laminated body shown in FIGS. 4A to 4D and 5A to 5E, the circuit surface and bumps of the semiconductor wafer are also circuit surfaces in the manufacturing method for the first laminated body. It is preferably protected by a protective tape 17. In this case, it is preferable to peel off the circuit surface protection tape at any stage before the curing step represented by FIG. 4D or FIG. 5E.
ワーク14としては、一方に回路面を有し、他方の面が裏面と云えるものであれば限定されない。ワーク14として、一方に回路面を有する半導体ウエハや、個片化され個々の電子部品が封止樹脂で封止され、一方に、端子付き半導体装置の端子形成面(換言すると回路面)を有する端子付き半導体装置集合体からなる半導体装置パネル等を例示することができる。
The work 14 is not limited as long as it has a circuit surface on one side and the other surface can be said to be the back surface. As the work 14, a semiconductor wafer having a circuit surface on one side or individual electronic components are sealed with a sealing resin, and one side has a terminal forming surface (in other words, a circuit surface) of a semiconductor device with terminals. An example includes a semiconductor device panel composed of a semiconductor device assembly with terminals.
回路面保護用テープ17としては、例えば、特開2016-192488号公報、特開2009-141265号公報に開示された表面保護用シートを用いることができる。回路面保護用テープ17は、適度な再剥離性を有する粘着剤層を備えている。前記粘着剤層は、ゴム系、アクリル系、シリコーン系、ウレタン系、ビニルエーテル系など汎用の弱粘着タイプの粘着剤から形成されてもよい。また、前記粘着剤層は、エネルギー線の照射により硬化して再剥離が可能となるエネルギー線硬化型粘着剤であってもよい。
As the circuit surface protection tape 17, for example, the surface protection sheet disclosed in JP-A-2016-192488 and JP-A-2009-141265 can be used. The circuit surface protection tape 17 includes an adhesive layer having an appropriate removability. The pressure-sensitive adhesive layer may be formed of a general-purpose weak adhesive type pressure-sensitive adhesive such as rubber-based, acrylic-based, silicone-based, urethane-based, and vinyl ether-based. Further, the pressure-sensitive adhesive layer may be an energy ray-curable pressure-sensitive adhesive that is cured by irradiation with energy rays and can be peeled off again.
第三積層体の製造方法においては、前記第一の積層工程(図6B~C、又は図7B~D)と、前記第二の積層工程(図6D~E、又は図7E~F)とを別々の装置で行ってもよい(以下、方法1ともいう。)。
第三積層体の製造方法においては、前記第一の積層工程から前記第二の積層工程までの間(図6B~E、又は図7B~F)を、裏面保護膜形成用フィルムを貼付する装置と支持シートを貼付する装置を連結させて行う、又は同一の装置内で行う(以下、方法2ともいう。)ことが好ましい。 In the method for producing the third laminated body, the first laminating step (FIGS. 6B to C or 7B to D) and the second laminating step (FIGS. 6D to E or 7E to F) are performed. It may be performed by separate devices (hereinafter, also referred to as method 1).
In the method for manufacturing the third laminated body, an apparatus for attaching the back surface protective film forming film between the first laminating step and the second laminating step (FIGS. 6B to E or 7B to F). It is preferable that the device for attaching the support sheet is connected to the device, or the device is used in the same device (hereinafter, also referred to as method 2).
第三積層体の製造方法においては、前記第一の積層工程から前記第二の積層工程までの間(図6B~E、又は図7B~F)を、裏面保護膜形成用フィルムを貼付する装置と支持シートを貼付する装置を連結させて行う、又は同一の装置内で行う(以下、方法2ともいう。)ことが好ましい。 In the method for producing the third laminated body, the first laminating step (FIGS. 6B to C or 7B to D) and the second laminating step (FIGS. 6D to E or 7E to F) are performed. It may be performed by separate devices (hereinafter, also referred to as method 1).
In the method for manufacturing the third laminated body, an apparatus for attaching the back surface protective film forming film between the first laminating step and the second laminating step (FIGS. 6B to E or 7B to F). It is preferable that the device for attaching the support sheet is connected to the device, or the device is used in the same device (hereinafter, also referred to as method 2).
第一積層体の製造方法においては、前記第一の積層工程(図4B~C、又は図5B~D)と、前記硬化工程(図4D、又は図5E)とを別々の装置で行ってもよい(以下、方法3ともいう)。
第一積層体の製造方法においては、前記第一の積層工程から前記硬化工程までの間(図4B~D、図5B~E)を、裏面保護膜形成用フィルムを貼付する装置と裏面保護膜形成用フィルムを硬化させる装置を連結させて行う、又は同一の装置内で行う(以下、方法4ともいう。)ことが好ましい。 In the method for producing the first laminated body, the first laminating step (FIGS. 4B to C or 5B to D) and the curing step (FIG. 4D or 5E) may be performed by separate devices. Good (hereinafter, also referred to as method 3).
In the method for producing the first laminated body, an apparatus for attaching a back surface protective film forming film and a back surface protective film during the period from the first laminating step to the curing step (FIGS. 4B to D and 5B to E). It is preferable to perform the process by connecting devices for curing the forming film or in the same device (hereinafter, also referred to as method 4).
第一積層体の製造方法においては、前記第一の積層工程から前記硬化工程までの間(図4B~D、図5B~E)を、裏面保護膜形成用フィルムを貼付する装置と裏面保護膜形成用フィルムを硬化させる装置を連結させて行う、又は同一の装置内で行う(以下、方法4ともいう。)ことが好ましい。 In the method for producing the first laminated body, the first laminating step (FIGS. 4B to C or 5B to D) and the curing step (FIG. 4D or 5E) may be performed by separate devices. Good (hereinafter, also referred to as method 3).
In the method for producing the first laminated body, an apparatus for attaching a back surface protective film forming film and a back surface protective film during the period from the first laminating step to the curing step (FIGS. 4B to D and 5B to E). It is preferable to perform the process by connecting devices for curing the forming film or in the same device (hereinafter, also referred to as method 4).
方法2においては、前記第一の積層工程から前記第二の積層工程までの間において、ワーク14に裏面保護膜形成用フィルム13及び保護層12が積層された第二積層体を、カセットに収容することなく、図6D~E、又は図7E~Fに示される第二の積層工程に、一枚ずつ搬送することができる。
方法4においては、前記第一の積層工程から前記硬化工程までの間において、ワーク14に裏面保護膜形成用フィルム13及び保護層12が積層された第二積層体を、カセットに収容することなく、図4D、又は図5Eに示される硬化工程に、一枚ずつ搬送することができる。
同一装置内で行うことにより、装置スペースをより低減できる。裏面保護膜形成用フィルムを貼付する装置と、支持シートを貼付する装置(又は裏面保護膜形成用フィルムを硬化させる装置)と、を連結させて行うことにより、一から設計せずとも従来の装置を改造することで対応ができ、初期費用の低減ができる。そして、第二積層体がカセットに収容されて装置外に搬送されることがないため、生産効率が向上し、かつ第二積層体の汚染を抑制することができる。 In the method 2, between the first laminating step and the second laminating step, the second laminated body in which the back surface protectivefilm forming film 13 and the protective layer 12 are laminated on the work 14 is housed in the cassette. Without doing so, the sheets can be conveyed one by one to the second laminating step shown in FIGS. 6D to 6E or 7E to 7F.
In the method 4, between the first laminating step and the curing step, the second laminated body in which the back surface protectivefilm forming film 13 and the protective layer 12 are laminated on the work 14 is not housed in the cassette. , 4D, or 5E can be transported one by one to the curing step shown in FIG. 5E.
By performing in the same device, the device space can be further reduced. By connecting a device for attaching the back surface protective film forming film and a device for attaching the support sheet (or a device for curing the back surface protective film forming film), a conventional device can be used without designing from scratch. It can be dealt with by remodeling, and the initial cost can be reduced. Since the second laminated body is not housed in the cassette and transported to the outside of the apparatus, the production efficiency can be improved and the contamination of the second laminated body can be suppressed.
方法4においては、前記第一の積層工程から前記硬化工程までの間において、ワーク14に裏面保護膜形成用フィルム13及び保護層12が積層された第二積層体を、カセットに収容することなく、図4D、又は図5Eに示される硬化工程に、一枚ずつ搬送することができる。
同一装置内で行うことにより、装置スペースをより低減できる。裏面保護膜形成用フィルムを貼付する装置と、支持シートを貼付する装置(又は裏面保護膜形成用フィルムを硬化させる装置)と、を連結させて行うことにより、一から設計せずとも従来の装置を改造することで対応ができ、初期費用の低減ができる。そして、第二積層体がカセットに収容されて装置外に搬送されることがないため、生産効率が向上し、かつ第二積層体の汚染を抑制することができる。 In the method 2, between the first laminating step and the second laminating step, the second laminated body in which the back surface protective
In the method 4, between the first laminating step and the curing step, the second laminated body in which the back surface protective
By performing in the same device, the device space can be further reduced. By connecting a device for attaching the back surface protective film forming film and a device for attaching the support sheet (or a device for curing the back surface protective film forming film), a conventional device can be used without designing from scratch. It can be dealt with by remodeling, and the initial cost can be reduced. Since the second laminated body is not housed in the cassette and transported to the outside of the apparatus, the production efficiency can be improved and the contamination of the second laminated body can be suppressed.
第一の積層工程に用いる裏面保護膜形成用フィルム13及び保護層12は、事前にワークの形状に加工されていてもよいし、第一の積層工程を行う直前に同一装置内で加工されてもよい。
The back surface protective film forming film 13 and the protective layer 12 used in the first laminating step may be processed into the shape of the work in advance, or may be processed in the same apparatus immediately before the first laminating step. May be good.
また、裏面保護膜形成用フィルム13及び保護層12は第一の積層工程を行った後に以下のように加工されてもよい。裏面保護膜形成用複合体1を使用する場合、第一の積層工程において、ワーク14の裏面に、裏面保護膜形成用複合体1の裏面保護膜形成用フィルム13を貼付して、ワーク14と、裏面保護膜形成用フィルム13と、保護層12とがこの順に積層された第二積層体を得た後に、裏面保護膜形成用フィルム13と、保護層12は、ワークの形状に加工される。
Further, the back surface protective film forming film 13 and the protective layer 12 may be processed as follows after performing the first laminating step. When the back surface protective film forming composite 1 is used, in the first laminating step, the back surface protective film forming film 13 of the back surface protective film forming complex 1 is attached to the back surface of the work 14, and the work 14 and the back surface protective film forming composite 1 are attached. After obtaining a second laminate in which the back surface protective film forming film 13 and the protective layer 12 are laminated in this order, the back surface protective film forming film 13 and the protective layer 12 are processed into the shape of a work. ..
裏面保護膜形成用複合体2を使用する場合、第一の積層工程において、ワーク14の裏面に、裏面保護膜形成用複合体2の裏面保護膜形成用フィルム13を貼付して、剥離フィルム151を剥離し、ワーク14と、裏面保護膜形成用フィルム13と、保護層12とがこの順に積層された積層体を得た後に、裏面保護膜形成用フィルム13と、保護層12は、ワークの形状に加工される。
When the back surface protective film forming composite 2 is used, in the first laminating step, the back surface protective film forming film 13 of the back surface protective film forming composite 2 is attached to the back surface of the work 14, and the release film 151 is used. To obtain a laminate in which the work 14, the back surface protective film forming film 13, and the protective layer 12 are laminated in this order, the back surface protective film forming film 13 and the protective layer 12 are formed on the work. Processed into a shape.
また、他の実施形態においては、前記第一の積層工程の貼付開始地点から前記第二の積層工程の貼付完了地点(又は前記第一の積層工程の貼付開始地点から前記硬化工程の硬化完了地点)までの間のワーク14の搬送距離を、7000mm以下に設計することができ、装置スペースを低減させることができる。前記第一の積層工程の貼付開始地点から前記第二の積層工程の貼付完了地点(又は前記第一の積層工程の貼付開始地点から前記硬化工程の硬化完了地点)までの間のワーク14の搬送距離は、6500mm以下にすることもでき、6000mm以下にすることもでき、4500mm以下にすることもでき、3000mm以下にすることもできる。ワーク14の搬送距離の下限値は、特に限定されないが、例えば、100mmとすることができる。
Further, in another embodiment, from the sticking start point of the first laminating step to the sticking completion point of the second laminating step (or from the sticking start point of the first laminating step to the curing completion point of the curing step). The transport distance of the work 14 up to) can be designed to be 7,000 mm or less, and the device space can be reduced. Transport of the work 14 from the sticking start point of the first laminating step to the sticking completion point of the second laminating step (or the sticking start point of the first laminating step to the curing completion point of the curing step). The distance can be 6500 mm or less, 6000 mm or less, 4500 mm or less, or 3000 mm or less. The lower limit of the transport distance of the work 14 is not particularly limited, but may be, for example, 100 mm.
また、さらに他の実施形態においては、前記第一の積層工程の貼付開始時から前記第二の積層工程の貼付完了時(又は前記第一の積層工程の貼付開始時から前記硬化工程の硬化完了時)までの間のワーク14の搬送時間を、400s以下にすることができ、工程時間を短縮することができる。前記第一の積層工程の貼付開始時から前記第二の積層工程の貼付完了時(又は前記第一の積層工程の貼付開始時から前記硬化工程の硬化完了時)までの間のワーク14の搬送時間は、300s以下にすることもでき、250s以下にすることもでき、200s以下にすることもでき、150s以下にすることもできる。ワーク14の搬送時間の下限値は特に限定されないが、例えば、10sとすることができる。
Further, in still another embodiment, the curing of the curing step is completed from the start of pasting of the first laminating step to the completion of pasting of the second laminating step (or from the start of pasting of the first laminating step). The transport time of the work 14 up to (hour) can be reduced to 400 s or less, and the process time can be shortened. Transport of the work 14 from the start of sticking of the first laminating step to the completion of sticking of the second laminating step (or from the start of sticking of the first laminating step to the completion of curing of the curing step). The time can be 300 s or less, 250 s or less, 200 s or less, or 150 s or less. The lower limit of the transport time of the work 14 is not particularly limited, but may be, for example, 10 s.
第一積層体の製造方法及び第三積層体の製造方法における第一の積層工程においてワーク14に裏面保護膜形成用フィルム13の露出面を貼付する速度、及び、第三積層体の製造方法における第二の積層工程において保護層12の露出面に支持シート10を貼付する速度は、100mm/秒以下とすることもでき、80mm/秒以下とすることもでき、60mm/秒以下とすることもでき、40mm/秒以下とすることもできる。第一の積層工程における前記貼付する速度、及び、第二の積層工程における前記貼付する速度が上記上限値以下であることにより、ワーク14と裏面保護膜形成用フィルム13との間の密着性、保護層12と支持シート10との間の密着性を良好なものとすることができる。
第一の積層工程における前記貼付する速度、及び、第二の積層工程における前記貼付する速度は、2mm/秒以上とすることもでき、5mm/秒以上とすることもでき、10mm/秒以上とすることもできる。第一の積層工程における前記貼付する速度、及び、第二の積層工程における前記貼付する速度が上記下限値以上であることにより、第一積層体23及び第三積層体25の生産効率を向上させるとともに、第一の積層工程の貼付開始時から第二の積層工程の貼付完了時(又は第一の積層工程の貼付開始時から硬化工程の硬化完了時)までの間のワーク14の搬送時間を、400s以下とすることができる。 The speed at which the exposed surface of the back surface protectivefilm forming film 13 is attached to the work 14 in the first laminating step in the first laminating body manufacturing method and the third laminating body manufacturing method, and the third laminating body manufacturing method. In the second laminating step, the speed at which the support sheet 10 is attached to the exposed surface of the protective layer 12 can be 100 mm / sec or less, 80 mm / sec or less, or 60 mm / sec or less. It can be 40 mm / sec or less. When the sticking speed in the first laminating step and the sticking speed in the second laminating step are equal to or less than the upper limit value, the adhesion between the work 14 and the back surface protective film forming film 13 can be determined. The adhesion between the protective layer 12 and the support sheet 10 can be improved.
The sticking speed in the first laminating step and the sticking speed in the second laminating step can be 2 mm / sec or more, 5 mm / sec or more, or 10 mm / sec or more. You can also do it. The production efficiency of the firstlaminated body 23 and the third laminated body 25 is improved by the sticking speed in the first laminating step and the sticking speed in the second laminating step being equal to or higher than the above lower limit value. At the same time, the transport time of the work 14 from the start of sticking of the first laminating step to the completion of sticking of the second laminating step (or from the start of sticking of the first laminating step to the completion of curing of the curing step) is set. , 400 s or less.
第一の積層工程における前記貼付する速度、及び、第二の積層工程における前記貼付する速度は、2mm/秒以上とすることもでき、5mm/秒以上とすることもでき、10mm/秒以上とすることもできる。第一の積層工程における前記貼付する速度、及び、第二の積層工程における前記貼付する速度が上記下限値以上であることにより、第一積層体23及び第三積層体25の生産効率を向上させるとともに、第一の積層工程の貼付開始時から第二の積層工程の貼付完了時(又は第一の積層工程の貼付開始時から硬化工程の硬化完了時)までの間のワーク14の搬送時間を、400s以下とすることができる。 The speed at which the exposed surface of the back surface protective
The sticking speed in the first laminating step and the sticking speed in the second laminating step can be 2 mm / sec or more, 5 mm / sec or more, or 10 mm / sec or more. You can also do it. The production efficiency of the first
本実施形態の第一積層体の製造方法及び第三積層体の製造方法は、裏面保護膜形成用フィルムを貼付する装置と、支持シートを貼付する装置(又は裏面保護膜形成用フィルムを硬化させる装置)と、を連結させて行う、又は同一の装置内で行うことができる。
同一の装置としては例えば、裏面保護膜形成用フィルム貼付テーブル、支持シート貼付テーブル(又は硬化ユニット)及び搬送アームを備える装置により実施することができる。
具体的には前記装置に投入されたワークは、搬送アームにより、裏面保護膜形成用フィルム貼付テーブルへ搬送され、前記ワークの裏面側に裏面保護膜形成複合体1の裏面保護膜形成用フィルムが貼付される(第一の積層工程)。 In the method for producing the first laminated body and the method for producing the third laminated body of the present embodiment, the device for attaching the back surface protective film forming film and the device for attaching the support sheet (or the back surface protective film forming film are cured). The device) and can be connected, or can be performed in the same device.
The same device can be implemented by, for example, a device including a back surface protective film forming film sticking table, a support sheet sticking table (or a curing unit), and a transport arm.
Specifically, the work put into the apparatus is conveyed to the back surface protective film forming film attachment table by the transport arm, and the back surface protective film forming film of the back surface protective film forming complex 1 is placed on the back surface side of the work. It is affixed (first laminating step).
同一の装置としては例えば、裏面保護膜形成用フィルム貼付テーブル、支持シート貼付テーブル(又は硬化ユニット)及び搬送アームを備える装置により実施することができる。
具体的には前記装置に投入されたワークは、搬送アームにより、裏面保護膜形成用フィルム貼付テーブルへ搬送され、前記ワークの裏面側に裏面保護膜形成複合体1の裏面保護膜形成用フィルムが貼付される(第一の積層工程)。 In the method for producing the first laminated body and the method for producing the third laminated body of the present embodiment, the device for attaching the back surface protective film forming film and the device for attaching the support sheet (or the back surface protective film forming film are cured). The device) and can be connected, or can be performed in the same device.
The same device can be implemented by, for example, a device including a back surface protective film forming film sticking table, a support sheet sticking table (or a curing unit), and a transport arm.
Specifically, the work put into the apparatus is conveyed to the back surface protective film forming film attachment table by the transport arm, and the back surface protective film forming film of the back surface protective film forming complex 1 is placed on the back surface side of the work. It is affixed (first laminating step).
搬送アームの吸着穴を有する吸着面を、前記第一の積層工程で得られた積層体の保護層面に吸着させ、支持シートを貼付する第二の積層工程(又は裏面保護膜形成用フィルムを硬化する硬化工程)に搬送する(搬送工程)。
The suction surface having the suction holes of the transport arm is attracted to the protective layer surface of the laminated body obtained in the first laminating step, and the second laminating step (or the film for forming the back surface protective film) to which the support sheet is attached is cured. (Transfer process).
上記搬送工程後、保護層に支持シートを貼付することにより、ワークと、裏面保護膜形成用フィルムと、保護層と、支持シートとがこの順に積層された第三積層体を得る(第二の積層工程)。
また、上記搬送工程後、裏面保護膜形成用フィルムを硬化することにより、ワークと、裏面保護膜と、保護層とがこの順に積層された第一積層体を得る(硬化工程)。 After the above transfer step, by attaching the support sheet to the protective layer, a third laminated body in which the work, the back surface protective film forming film, the protective layer, and the support sheet are laminated in this order is obtained (second). Laminating process).
Further, after the transfer step, the film for forming the back surface protective film is cured to obtain a first laminated body in which the work, the back surface protective film, and the protective layer are laminated in this order (curing step).
また、上記搬送工程後、裏面保護膜形成用フィルムを硬化することにより、ワークと、裏面保護膜と、保護層とがこの順に積層された第一積層体を得る(硬化工程)。 After the above transfer step, by attaching the support sheet to the protective layer, a third laminated body in which the work, the back surface protective film forming film, the protective layer, and the support sheet are laminated in this order is obtained (second). Laminating process).
Further, after the transfer step, the film for forming the back surface protective film is cured to obtain a first laminated body in which the work, the back surface protective film, and the protective layer are laminated in this order (curing step).
本実施形態の裏面保護膜形成用複合体1を用いることで、前記搬送工程における、裏面保護膜形成用フィルム13の汚染及び変形を防止することができる。
By using the back surface protective film forming composite 1 of the present embodiment, it is possible to prevent contamination and deformation of the back surface protective film forming film 13 in the transfer step.
前記装置は、裏面保護膜形成用フィルム貼付テーブルを1~5個備えることが好ましく、1~3個備えることがより好ましい。装置内の裏面保護膜形成用フィルム貼付テーブルの数が前記範囲の下限値以上であると、生産効率が高まり、上限値以下であると、装置のスペースを低減することができる。
The device preferably includes 1 to 5 tables for attaching a film for forming a back surface protective film, and more preferably 1 to 3 tables. When the number of the back surface protective film forming film sticking tables in the apparatus is not less than the lower limit value of the above range, the production efficiency is increased, and when it is not more than the upper limit value, the space of the apparatus can be reduced.
前記装置は、支持シート貼付テーブルを1~5個備えることが好ましく、1~3個備えることがより好ましい。装置内の支持シート貼付テーブルの数が前記範囲の下限値以上であると、生産効率が高まり、上限値以下であると、装置のスペースを低減することができる。
The device preferably includes 1 to 5 support sheet attachment tables, and more preferably 1 to 3 tables. When the number of support sheet attachment tables in the device is at least the lower limit of the above range, the production efficiency is increased, and when it is at least the upper limit, the space of the device can be reduced.
前記装置は、搬送アームを各搬送経路に合わせて備えることが好ましい。テーブルの総数に対する搬送アームの数の割合を1以上とすると、生産効率を高めることができる。また、テーブルを2個以上備える場合、テーブルの総数に対する搬送アームの数の割合を0超1未満(例えば、2個のテーブルに対して搬送アームの総数が1)とすると、装置のスペースの低減が可能となる。
It is preferable that the device is provided with a transfer arm according to each transfer path. When the ratio of the number of transport arms to the total number of tables is 1 or more, the production efficiency can be improved. Further, when two or more tables are provided, if the ratio of the number of transfer arms to the total number of tables is more than 0 and less than 1 (for example, the total number of transfer arms is 1 for two tables), the space of the device is reduced. Is possible.
裏面保護膜形成用フィルムを貼付する装置と支持シートを貼付する装置を連結させて行う具体例としては、裏面保護膜形成用フィルムを貼付する機構を有する装置と、支持シートを貼付する機構を有する装置を連続させ、各機構間において、ワーク14に裏面保護膜形成用フィルム13が貼付された第二積層体を、搬送アームを用いて、一枚ずつ搬送する方法が挙げられる。
裏面保護膜形成用フィルムを貼付する装置と裏面保護膜形成用フィルムを硬化する装置を連結させて行う具体例としては、裏面保護膜形成用フィルムを貼付する機構を有する装置と、裏面保護膜形成用フィルムを硬化させる機構を有する装置を連続させ、各機構間において、ワーク14に裏面保護膜形成用フィルム13が貼付された第二積層体を搬送アームを用いて、一枚ずつ搬送する方法が挙げられる。 Specific examples of connecting the device for attaching the back surface protective film forming film and the device for attaching the support sheet include a device having a mechanism for attaching the back surface protective film forming film and a mechanism for attaching the support sheet. Examples thereof include a method in which the devices are made continuous and the second laminated body in which the back surface protectivefilm forming film 13 is attached to the work 14 is conveyed one by one by using a conveying arm between the mechanisms.
Specific examples of connecting a device for attaching the back surface protective film forming film and a device for curing the back surface protective film forming film include a device having a mechanism for attaching the back surface protective film forming film and a back surface protective film forming device. A method in which devices having a mechanism for curing a film for curing are continuously connected, and a second laminated body in which afilm 13 for forming a back surface protective film is attached to a work 14 is conveyed one by one by using a conveying arm between the mechanisms. Can be mentioned.
裏面保護膜形成用フィルムを貼付する装置と裏面保護膜形成用フィルムを硬化する装置を連結させて行う具体例としては、裏面保護膜形成用フィルムを貼付する機構を有する装置と、裏面保護膜形成用フィルムを硬化させる機構を有する装置を連続させ、各機構間において、ワーク14に裏面保護膜形成用フィルム13が貼付された第二積層体を搬送アームを用いて、一枚ずつ搬送する方法が挙げられる。 Specific examples of connecting the device for attaching the back surface protective film forming film and the device for attaching the support sheet include a device having a mechanism for attaching the back surface protective film forming film and a mechanism for attaching the support sheet. Examples thereof include a method in which the devices are made continuous and the second laminated body in which the back surface protective
Specific examples of connecting a device for attaching the back surface protective film forming film and a device for curing the back surface protective film forming film include a device having a mechanism for attaching the back surface protective film forming film and a back surface protective film forming device. A method in which devices having a mechanism for curing a film for curing are continuously connected, and a second laminated body in which a
本実施形態の第一積層体の製造方法及び第三積層体の製造方法における、第一の積層工程は以下の方法により行うことが好ましい。以下では、第一の積層工程に用いる裏面保護膜形成用フィルム13及び保護層12を、事前にワークの形状に加工する、又は第一の積層工程を行う直前に同一装置内で加工する場合について説明を行う。
本実施形態の裏面保護膜形成用複合体2の裏面保護膜形成用フィルム13の最表面に剥離フィルム152を有する図9で表される帯状の裏面保護膜形成用複合体3を用意する。
帯状の裏面保護膜形成用複合体3は、ロール状に巻かれて保存されることが好ましい。
まず、剥離フィルム152を剥離し、裏面保護膜形成用フィルム13と保護層12をワーク14の形状に切断加工する。そして外周部の裏面保護膜形成用フィルム13、保護層12からなる積層体を巻き取ることにより除去する。 In the method for producing the first laminated body and the method for producing the third laminated body of the present embodiment, the first laminating step is preferably performed by the following method. In the following, the case where the back surface protectivefilm forming film 13 and the protective layer 12 used in the first laminating step are processed into the shape of the work in advance or processed in the same apparatus immediately before the first laminating step is performed. Give an explanation.
A band-shaped back surface protective film forming composite 3 represented by FIG. 9 having arelease film 152 on the outermost surface of the back surface protective film forming film 13 of the back surface protective film forming composite 2 of the present embodiment is prepared.
The strip-shaped back surface protective film forming complex 3 is preferably rolled and stored.
First, therelease film 152 is peeled off, and the back surface protective film forming film 13 and the protective layer 12 are cut into the shape of the work 14. Then, the laminated body composed of the back surface protective film forming film 13 and the protective layer 12 on the outer peripheral portion is removed by winding.
本実施形態の裏面保護膜形成用複合体2の裏面保護膜形成用フィルム13の最表面に剥離フィルム152を有する図9で表される帯状の裏面保護膜形成用複合体3を用意する。
帯状の裏面保護膜形成用複合体3は、ロール状に巻かれて保存されることが好ましい。
まず、剥離フィルム152を剥離し、裏面保護膜形成用フィルム13と保護層12をワーク14の形状に切断加工する。そして外周部の裏面保護膜形成用フィルム13、保護層12からなる積層体を巻き取ることにより除去する。 In the method for producing the first laminated body and the method for producing the third laminated body of the present embodiment, the first laminating step is preferably performed by the following method. In the following, the case where the back surface protective
A band-shaped back surface protective film forming composite 3 represented by FIG. 9 having a
The strip-shaped back surface protective film forming complex 3 is preferably rolled and stored.
First, the
保護層12を有さない場合、上述の外周部の巻取りは、裏面保護膜形成用フィルム13のみを巻き取ることになる。裏面保護膜形成用フィルム13は、薄く、脆弱であるため、巻取りを行う際に切断が起きる可能性があり、外周部の巻取りがうまくいかないことがある。
本実施形態の裏面保護膜形成用複合体3を用いると、上述の外周部の巻取りは、裏面保護膜形成用フィルム13、保護層12からなる積層体を巻き取ることとなる。保護層12を有することにより、積層体が厚くなり、強度も上がるため、巻取りを行う際の切断が起きる可能性が低くなり、外周部の巻取りを効率的に行うことが可能となる。 When theprotective layer 12 is not provided, the winding of the outer peripheral portion described above involves winding only the back surface protective film forming film 13. Since the back surface protective film forming film 13 is thin and fragile, cutting may occur during winding, and winding of the outer peripheral portion may not be successful.
When the back surface protectivefilm forming composite 3 of the present embodiment is used, the above-mentioned winding of the outer peripheral portion involves winding the laminated body composed of the back surface protective film forming film 13 and the protective layer 12. By having the protective layer 12, the laminated body becomes thicker and stronger, so that the possibility of cutting during winding is reduced, and the outer peripheral portion can be wound efficiently.
本実施形態の裏面保護膜形成用複合体3を用いると、上述の外周部の巻取りは、裏面保護膜形成用フィルム13、保護層12からなる積層体を巻き取ることとなる。保護層12を有することにより、積層体が厚くなり、強度も上がるため、巻取りを行う際の切断が起きる可能性が低くなり、外周部の巻取りを効率的に行うことが可能となる。 When the
When the back surface protective
このようにワークの形状に切断加工された、本実施形態の裏面保護膜形成用複合体2をワーク14の裏面に貼付して、ワーク14と、裏面保護膜形成用フィルム13と、保護層12と、剥離フィルム151とがこの順で積層された積層体を得る。上述の通り、剥離フィルム151は切断加工されていないため、帯状のままである。帯状の剥離フィルム151を巻き取ることにより、剥離フィルム151を剥離し、ワーク14と、裏面保護膜形成用フィルム13と、保護層12とがこの順で積層された第二積層体24を得る。
The back surface protective film forming composite 2 of the present embodiment, which has been cut into the shape of the work, is attached to the back surface of the work 14, and the work 14, the back surface protective film forming film 13, and the protective layer 12 are attached. And the release film 151 are laminated in this order to obtain a laminated body. As described above, the release film 151 remains strip-shaped because it has not been cut. By winding the strip-shaped release film 151, the release film 151 is peeled off to obtain a second laminated body 24 in which the work 14, the back surface protective film forming film 13, and the protective layer 12 are laminated in this order.
第三積層体の製造方法における図6D又は図7Eに示される第二の積層工程において、保護層12に、支持シート10を積層する。支持シート10は、例えば、厚さ80μm、直径が270mmの円形のポリオレフィンフィルムであり、外周部に、治具用接着剤層を備えていてもよい。本実施形態では、ワーク14は、裏面保護膜形成用フィルム13及び保護層12とともに固定用治具18に固定されていてもよい。そして、保護層12に、支持シート10を積層するとともに、固定用治具18に固定されていてもよい(図6E又は図7F)。
In the second laminating step shown in FIG. 6D or FIG. 7E in the method for manufacturing the third laminated body, the support sheet 10 is laminated on the protective layer 12. The support sheet 10 is, for example, a circular polyolefin film having a thickness of 80 μm and a diameter of 270 mm, and may be provided with an adhesive layer for jigs on the outer peripheral portion. In the present embodiment, the work 14 may be fixed to the fixing jig 18 together with the back surface protective film forming film 13 and the protective layer 12. Then, the support sheet 10 may be laminated on the protective layer 12 and fixed to the fixing jig 18 (FIG. 6E or FIG. 7F).
<支持シート>
本発明の一態様で用いる支持シート10としては、基材101のみから構成されたシートや、基材101上に粘着剤層102を有する粘着シートが挙げられる。
本発明の一態様の第三積層体が有する支持シートは、裏面保護膜形成用フィルムの表面にホコリ等の付着を防止する剥離シート、もしくは、ダイシング工程等で裏面保護膜形成用フィルムの面を保護するためのダイシングシート等の役割を果たすものである。 <Support sheet>
Examples of thesupport sheet 10 used in one aspect of the present invention include a sheet composed of only the base material 101 and a pressure-sensitive adhesive sheet having the pressure-sensitive adhesive layer 102 on the base material 101.
The support sheet included in the third laminated body of one aspect of the present invention is a release sheet for preventing dust or the like from adhering to the surface of the back surface protective film forming film, or the surface of the back surface protective film forming film in a dicing step or the like. It plays the role of a dicing sheet or the like for protection.
本発明の一態様で用いる支持シート10としては、基材101のみから構成されたシートや、基材101上に粘着剤層102を有する粘着シートが挙げられる。
本発明の一態様の第三積層体が有する支持シートは、裏面保護膜形成用フィルムの表面にホコリ等の付着を防止する剥離シート、もしくは、ダイシング工程等で裏面保護膜形成用フィルムの面を保護するためのダイシングシート等の役割を果たすものである。 <Support sheet>
Examples of the
The support sheet included in the third laminated body of one aspect of the present invention is a release sheet for preventing dust or the like from adhering to the surface of the back surface protective film forming film, or the surface of the back surface protective film forming film in a dicing step or the like. It plays the role of a dicing sheet or the like for protection.
支持シートの厚さとしては、用途に応じて適宜選択されるが、複合シートに十分な可とう性を付与し、シリコンウエハに対する貼付性を良好とする観点から、好ましくは10~500μm、より好ましくは20~350μm、更に好ましくは30~200μmである。
なお、上記の支持シートの厚さには、支持シートを構成する基材の厚さだけでなく、粘着剤層を有する場合には、それらの層や膜の厚さも含む。 The thickness of the support sheet is appropriately selected depending on the intended use, but is preferably 10 to 500 μm, more preferably 10 to 500 μm, from the viewpoint of imparting sufficient flexibility to the composite sheet and improving the adhesiveness to the silicon wafer. Is 20 to 350 μm, more preferably 30 to 200 μm.
The thickness of the support sheet includes not only the thickness of the base material constituting the support sheet but also the thickness of those layers and the film when the pressure-sensitive adhesive layer is provided.
なお、上記の支持シートの厚さには、支持シートを構成する基材の厚さだけでなく、粘着剤層を有する場合には、それらの層や膜の厚さも含む。 The thickness of the support sheet is appropriately selected depending on the intended use, but is preferably 10 to 500 μm, more preferably 10 to 500 μm, from the viewpoint of imparting sufficient flexibility to the composite sheet and improving the adhesiveness to the silicon wafer. Is 20 to 350 μm, more preferably 30 to 200 μm.
The thickness of the support sheet includes not only the thickness of the base material constituting the support sheet but also the thickness of those layers and the film when the pressure-sensitive adhesive layer is provided.
支持シート10を構成する基材101としては、保護層で説明した基材を用いることができる。
また、本発明の一態様においては、上述の樹脂フィルム等の基材の表面に、表面処理を施したシートを支持シートとして用いてもよい。 As thebase material 101 constituting the support sheet 10, the base material described in the protective layer can be used.
Further, in one aspect of the present invention, a sheet obtained by subjecting the surface of a base material such as the above-mentioned resin film to a surface treatment may be used as a support sheet.
また、本発明の一態様においては、上述の樹脂フィルム等の基材の表面に、表面処理を施したシートを支持シートとして用いてもよい。 As the
Further, in one aspect of the present invention, a sheet obtained by subjecting the surface of a base material such as the above-mentioned resin film to a surface treatment may be used as a support sheet.
これらの樹脂フィルムの中でも、耐熱性に優れ、且つ、適度な柔軟性を有するためにエキスパンド適性を有し、ピックアップ適性も維持されやすいとの観点から、ポリプロピレンフィルムを含む基材が好ましい。
なお、ポリプロピレンフィルムを含む基材の構成としては、ポリプロピレンフィルムのみからなる単層構造であってもよく、ポリプロピレンフィルムと他の樹脂フィルムとからなる複層構造であってもよい。
裏面保護膜形成用フィルムが熱硬化性である場合、基材を構成する樹脂フィルムが耐熱性を有することで、基材の熱によるダメージを抑制し、半導体装置の製造プロセスにおける不具合の発生を抑制できる。 Among these resin films, a base material containing a polypropylene film is preferable from the viewpoint that it has excellent heat resistance, has expandability because it has appropriate flexibility, and easily maintains pickup suitability.
The base material containing the polypropylene film may have a single-layer structure composed of only the polypropylene film or a multi-layer structure composed of the polypropylene film and another resin film.
When the film for forming the back surface protective film is thermosetting, the resin film constituting the base material has heat resistance, thereby suppressing damage due to heat of the base material and suppressing the occurrence of defects in the manufacturing process of the semiconductor device. can.
なお、ポリプロピレンフィルムを含む基材の構成としては、ポリプロピレンフィルムのみからなる単層構造であってもよく、ポリプロピレンフィルムと他の樹脂フィルムとからなる複層構造であってもよい。
裏面保護膜形成用フィルムが熱硬化性である場合、基材を構成する樹脂フィルムが耐熱性を有することで、基材の熱によるダメージを抑制し、半導体装置の製造プロセスにおける不具合の発生を抑制できる。 Among these resin films, a base material containing a polypropylene film is preferable from the viewpoint that it has excellent heat resistance, has expandability because it has appropriate flexibility, and easily maintains pickup suitability.
The base material containing the polypropylene film may have a single-layer structure composed of only the polypropylene film or a multi-layer structure composed of the polypropylene film and another resin film.
When the film for forming the back surface protective film is thermosetting, the resin film constituting the base material has heat resistance, thereby suppressing damage due to heat of the base material and suppressing the occurrence of defects in the manufacturing process of the semiconductor device. can.
支持シートとして、基材のみから構成されたシートを用いる場合、前記基材の裏面保護膜形成用フィルムの表面と接する面の表面張力としては、剥離力を一定の範囲に調節する観点から、好ましくは20~50mN/m、より好ましくは23~45mN/m、更に好ましくは25~40mN/mである。
When a sheet composed of only the base material is used as the support sheet, the surface tension of the surface of the base material in contact with the surface of the back surface protective film forming film is preferable from the viewpoint of adjusting the peeling force within a certain range. Is 20 to 50 mN / m, more preferably 23 to 45 mN / m, and even more preferably 25 to 40 mN / m.
支持シートを構成する基材の厚さとしては、好ましくは10~500μm、より好ましくは15~300μm、更に好ましくは20~200μmである。
The thickness of the base material constituting the support sheet is preferably 10 to 500 μm, more preferably 15 to 300 μm, and further preferably 20 to 200 μm.
(粘着シート)
本発明の一態様で支持シート10として用いる粘着シートとしては、上述の樹脂フィルム等の基材101上に、粘着剤から形成した粘着剤層102を有するものが挙げられる。
図8は、基材101上に粘着剤層102が設けられた支持シート10の一例を示す概略断面図である。
支持シート10が粘着剤層102を備えるものであるときは、第二の積層工程において、保護層12に、支持シート10の粘着剤層102を積層する。 (Adhesive sheet)
Examples of the pressure-sensitive adhesive sheet used as thesupport sheet 10 in one aspect of the present invention include those having a pressure-sensitive adhesive layer 102 formed from a pressure-sensitive adhesive on a base material 101 such as the above-mentioned resin film.
FIG. 8 is a schematic cross-sectional view showing an example of asupport sheet 10 in which the pressure-sensitive adhesive layer 102 is provided on the base material 101.
When thesupport sheet 10 includes the pressure-sensitive adhesive layer 102, the pressure-sensitive adhesive layer 102 of the support sheet 10 is laminated on the protective layer 12 in the second laminating step.
本発明の一態様で支持シート10として用いる粘着シートとしては、上述の樹脂フィルム等の基材101上に、粘着剤から形成した粘着剤層102を有するものが挙げられる。
図8は、基材101上に粘着剤層102が設けられた支持シート10の一例を示す概略断面図である。
支持シート10が粘着剤層102を備えるものであるときは、第二の積層工程において、保護層12に、支持シート10の粘着剤層102を積層する。 (Adhesive sheet)
Examples of the pressure-sensitive adhesive sheet used as the
FIG. 8 is a schematic cross-sectional view showing an example of a
When the
粘着剤層の形成材料である粘着剤としては、粘着性樹脂を含む粘着剤組成物が挙げられ、前記粘着剤組成物は、さらに上述の架橋剤や粘着付与剤等の汎用添加剤を含有してもよい。
前記粘着性樹脂としては、その樹脂の構造に着目した場合、例えば、アクリル系樹脂、ウレタン系樹脂、ゴム系樹脂、シリコーン系樹脂、ビニルエーテル系樹脂等が挙げられ、その樹脂の機能に着目した場合、例えば、エネルギー線硬化型粘着剤や、加熱発泡型粘着剤、エネルギー線発泡型粘着剤等が挙げられる。
本発明の一態様においては、支持シートの粘着剤層102は、保護層との密着性を確保するため強粘着剤層が好ましい。エネルギー線硬化型樹脂を含む粘着剤組成物から形成されたエネルギー線硬化性の粘着剤層であってもよい。 Examples of the pressure-sensitive adhesive which is a material for forming the pressure-sensitive adhesive layer include a pressure-sensitive adhesive composition containing a pressure-sensitive adhesive resin, and the pressure-sensitive adhesive composition further contains a general-purpose additive such as the above-mentioned cross-linking agent and pressure-sensitive adhesive. You may.
Examples of the adhesive resin include acrylic resin, urethane resin, rubber resin, silicone resin, vinyl ether resin, and the like when focusing on the structure of the resin, and when focusing on the function of the resin. For example, an energy ray-curable pressure-sensitive adhesive, a heat-foaming type pressure-sensitive adhesive, an energy ray-foaming type pressure-sensitive adhesive, and the like can be mentioned.
In one aspect of the present invention, the pressure-sensitive adhesive layer 102 of the support sheet is preferably a strong pressure-sensitive adhesive layer in order to ensure adhesion to the protective layer. It may be an energy ray-curable pressure-sensitive adhesive layer formed from a pressure-sensitive adhesive composition containing an energy ray-curable resin.
前記粘着性樹脂としては、その樹脂の構造に着目した場合、例えば、アクリル系樹脂、ウレタン系樹脂、ゴム系樹脂、シリコーン系樹脂、ビニルエーテル系樹脂等が挙げられ、その樹脂の機能に着目した場合、例えば、エネルギー線硬化型粘着剤や、加熱発泡型粘着剤、エネルギー線発泡型粘着剤等が挙げられる。
本発明の一態様においては、支持シートの粘着剤層102は、保護層との密着性を確保するため強粘着剤層が好ましい。エネルギー線硬化型樹脂を含む粘着剤組成物から形成されたエネルギー線硬化性の粘着剤層であってもよい。 Examples of the pressure-sensitive adhesive which is a material for forming the pressure-sensitive adhesive layer include a pressure-sensitive adhesive composition containing a pressure-sensitive adhesive resin, and the pressure-sensitive adhesive composition further contains a general-purpose additive such as the above-mentioned cross-linking agent and pressure-sensitive adhesive. You may.
Examples of the adhesive resin include acrylic resin, urethane resin, rubber resin, silicone resin, vinyl ether resin, and the like when focusing on the structure of the resin, and when focusing on the function of the resin. For example, an energy ray-curable pressure-sensitive adhesive, a heat-foaming type pressure-sensitive adhesive, an energy ray-foaming type pressure-sensitive adhesive, and the like can be mentioned.
In one aspect of the present invention, the pressure-
また、剥離力を一定の範囲に調整する観点から、アクリル系樹脂を含む粘着剤が好ましい。
前記アクリル系樹脂としては、アルキル(メタ)アクリレートに由来する構成単位(x1)を有するアクリル系重合体が好ましく、構成単位(x1)と、官能基含有モノマーに由来する構成単位(x2)とを有するアクリル系共重合体がより好ましい。 Further, from the viewpoint of adjusting the peeling force within a certain range, an adhesive containing an acrylic resin is preferable.
As the acrylic resin, an acrylic polymer having a structural unit (x1) derived from alkyl (meth) acrylate is preferable, and the structural unit (x1) and the structural unit (x2) derived from the functional group-containing monomer are used. The acrylic copolymer having is more preferable.
前記アクリル系樹脂としては、アルキル(メタ)アクリレートに由来する構成単位(x1)を有するアクリル系重合体が好ましく、構成単位(x1)と、官能基含有モノマーに由来する構成単位(x2)とを有するアクリル系共重合体がより好ましい。 Further, from the viewpoint of adjusting the peeling force within a certain range, an adhesive containing an acrylic resin is preferable.
As the acrylic resin, an acrylic polymer having a structural unit (x1) derived from alkyl (meth) acrylate is preferable, and the structural unit (x1) and the structural unit (x2) derived from the functional group-containing monomer are used. The acrylic copolymer having is more preferable.
上記アルキル(メタ)アクリレートが有するアルキル基の炭素数としては、好ましくは1~18、より好ましくは1~12、更に好ましくは1~8である。
前記アルキル(メタ)アクリレートとしては、上述のバインダーポリマー成分の部分で説明したアルキル(メタ)アクリレートと同じものが挙げられる。
なお、アルキル(メタ)アクリレートは、単独で又は2種以上を併用してもよい。
構成単位(x1)の含有量は、アクリル系重合体の全構成単位(100質量%)に対して、通常50~100質量%、好ましくは50~99.9質量%、より好ましくは60~99質量%、更に好ましくは70~95質量%である。 The alkyl group of the alkyl (meth) acrylate has preferably 1 to 18 carbon atoms, more preferably 1 to 12 carbon atoms, and even more preferably 1 to 8 carbon atoms.
Examples of the alkyl (meth) acrylate include the same alkyl (meth) acrylates described in the above-mentioned binder polymer component section.
The alkyl (meth) acrylate may be used alone or in combination of two or more.
The content of the structural unit (x1) is usually 50 to 100% by mass, preferably 50 to 99.9% by mass, and more preferably 60 to 99 with respect to the total structural unit (100% by mass) of the acrylic polymer. It is by mass, more preferably 70 to 95% by mass.
前記アルキル(メタ)アクリレートとしては、上述のバインダーポリマー成分の部分で説明したアルキル(メタ)アクリレートと同じものが挙げられる。
なお、アルキル(メタ)アクリレートは、単独で又は2種以上を併用してもよい。
構成単位(x1)の含有量は、アクリル系重合体の全構成単位(100質量%)に対して、通常50~100質量%、好ましくは50~99.9質量%、より好ましくは60~99質量%、更に好ましくは70~95質量%である。 The alkyl group of the alkyl (meth) acrylate has preferably 1 to 18 carbon atoms, more preferably 1 to 12 carbon atoms, and even more preferably 1 to 8 carbon atoms.
Examples of the alkyl (meth) acrylate include the same alkyl (meth) acrylates described in the above-mentioned binder polymer component section.
The alkyl (meth) acrylate may be used alone or in combination of two or more.
The content of the structural unit (x1) is usually 50 to 100% by mass, preferably 50 to 99.9% by mass, and more preferably 60 to 99 with respect to the total structural unit (100% by mass) of the acrylic polymer. It is by mass, more preferably 70 to 95% by mass.
上記官能基含有モノマーとしては、例えば、ヒドロキシ基含有モノマー、カルボキシ基含有モノマー、エポキシ基含有モノマー等が挙げられ、それぞれのモノマーの具体例は、バインダーポリマー成分の部分で例示したものと同じものがあげられる。
なお、これらは、単独で又は2種以上を併用してもよい。
構成単位(x2)の含有量は、アクリル系重合体の全構成単位(100質量%)に対して、通常0~40質量%、好ましくは0.1~40質量%、より好ましくは1~30質量%、更に好ましくは5~20質量%である。 Examples of the functional group-containing monomer include a hydroxy group-containing monomer, a carboxy group-containing monomer, an epoxy group-containing monomer, and the like, and specific examples of each monomer are the same as those exemplified in the binder polymer component portion. can give.
In addition, these may be used alone or in combination of 2 or more types.
The content of the structural unit (x2) is usually 0 to 40% by mass, preferably 0.1 to 40% by mass, and more preferably 1 to 30 with respect to the total structural unit (100% by mass) of the acrylic polymer. It is by mass, more preferably 5 to 20% by mass.
なお、これらは、単独で又は2種以上を併用してもよい。
構成単位(x2)の含有量は、アクリル系重合体の全構成単位(100質量%)に対して、通常0~40質量%、好ましくは0.1~40質量%、より好ましくは1~30質量%、更に好ましくは5~20質量%である。 Examples of the functional group-containing monomer include a hydroxy group-containing monomer, a carboxy group-containing monomer, an epoxy group-containing monomer, and the like, and specific examples of each monomer are the same as those exemplified in the binder polymer component portion. can give.
In addition, these may be used alone or in combination of 2 or more types.
The content of the structural unit (x2) is usually 0 to 40% by mass, preferably 0.1 to 40% by mass, and more preferably 1 to 30 with respect to the total structural unit (100% by mass) of the acrylic polymer. It is by mass, more preferably 5 to 20% by mass.
また、本発明の一態様で用いるアクリル系樹脂としては、上記構成単位(x1)及び(x2)を有するアクリル系共重合体に対して、さらにエネルギー線重合性基を有する化合物と反応して得られる、エネルギー線硬化型アクリル系樹脂であってもよい。
エネルギー線重合性基を有する化合物としては、(メタ)アクリロイル基、ビニル基等の重合性基を有する化合物であればよい。 The acrylic resin used in one embodiment of the present invention is obtained by reacting an acrylic copolymer having the above-mentioned structural units (x1) and (x2) with a compound having an energy ray-polymerizable group. It may be an energy ray-curable acrylic resin.
The compound having an energy ray-polymerizable group may be a compound having a polymerizable group such as a (meth) acryloyl group or a vinyl group.
エネルギー線重合性基を有する化合物としては、(メタ)アクリロイル基、ビニル基等の重合性基を有する化合物であればよい。 The acrylic resin used in one embodiment of the present invention is obtained by reacting an acrylic copolymer having the above-mentioned structural units (x1) and (x2) with a compound having an energy ray-polymerizable group. It may be an energy ray-curable acrylic resin.
The compound having an energy ray-polymerizable group may be a compound having a polymerizable group such as a (meth) acryloyl group or a vinyl group.
アクリル系樹脂を含む粘着剤を用いる場合、剥離力を一定の範囲に調整する観点から、アクリル系樹脂と共に、架橋剤を含有することが好ましい。
前記架橋剤としては、例えば、イソシアネート系架橋剤、イミン系架橋剤、エポキシ系架橋剤、オキサゾリン系架橋剤、カルボジイミド系架橋剤等が挙げられるが、剥離力を一定の範囲に調整する観点から、イソシアネート系架橋剤が好ましい。
架橋剤の含有量は、上記粘着剤中に含まれるアクリル系樹脂の全質量(100質量部)に対して、好ましくは0.01~20質量部、より好ましくは0.1~15質量部、更に好ましくは0.5~10質量部、より更に好ましくは1~8質量部である。 When a pressure-sensitive adhesive containing an acrylic resin is used, it is preferable to contain a cross-linking agent together with the acrylic resin from the viewpoint of adjusting the peeling force within a certain range.
Examples of the cross-linking agent include isocyanate-based cross-linking agents, imine-based cross-linking agents, epoxy-based cross-linking agents, oxazoline-based cross-linking agents, carbodiimide-based cross-linking agents, and the like, from the viewpoint of adjusting the peeling force within a certain range. Isocyanate-based cross-linking agents are preferred.
The content of the cross-linking agent is preferably 0.01 to 20 parts by mass, more preferably 0.1 to 15 parts by mass, based on the total mass (100 parts by mass) of the acrylic resin contained in the pressure-sensitive adhesive. It is more preferably 0.5 to 10 parts by mass, and even more preferably 1 to 8 parts by mass.
前記架橋剤としては、例えば、イソシアネート系架橋剤、イミン系架橋剤、エポキシ系架橋剤、オキサゾリン系架橋剤、カルボジイミド系架橋剤等が挙げられるが、剥離力を一定の範囲に調整する観点から、イソシアネート系架橋剤が好ましい。
架橋剤の含有量は、上記粘着剤中に含まれるアクリル系樹脂の全質量(100質量部)に対して、好ましくは0.01~20質量部、より好ましくは0.1~15質量部、更に好ましくは0.5~10質量部、より更に好ましくは1~8質量部である。 When a pressure-sensitive adhesive containing an acrylic resin is used, it is preferable to contain a cross-linking agent together with the acrylic resin from the viewpoint of adjusting the peeling force within a certain range.
Examples of the cross-linking agent include isocyanate-based cross-linking agents, imine-based cross-linking agents, epoxy-based cross-linking agents, oxazoline-based cross-linking agents, carbodiimide-based cross-linking agents, and the like, from the viewpoint of adjusting the peeling force within a certain range. Isocyanate-based cross-linking agents are preferred.
The content of the cross-linking agent is preferably 0.01 to 20 parts by mass, more preferably 0.1 to 15 parts by mass, based on the total mass (100 parts by mass) of the acrylic resin contained in the pressure-sensitive adhesive. It is more preferably 0.5 to 10 parts by mass, and even more preferably 1 to 8 parts by mass.
支持シート10は、1層(単層)からなるものであってもよいし、2層以上の複数層からなるものであってもよい。支持シートが複数層からなる場合、これら複数層の構成材料及び厚さは、互いに同一でも異なっていてもよく、これら複数層の組み合わせは、本発明の効果を損なわない限り、特に限定されない。
The support sheet 10 may be composed of one layer (single layer) or may be composed of two or more layers. When the support sheet is composed of a plurality of layers, the constituent materials and the thicknesses of the plurality of layers may be the same or different from each other, and the combination of the plurality of layers is not particularly limited as long as the effects of the present invention are not impaired.
なお、本明細書においては、支持シートの場合に限らず、「複数層が互いに同一でも異なっていてもよい」とは、「すべての層が同一であってもよいし、すべての層が異なっていてもよく、一部の層のみが同一であってもよい」ことを意味し、さらに「複数層が互いに異なる」とは、「各層の構成材料及び厚さの少なくとも一方が互いに異なる」ことを意味する。
In the present specification, not only in the case of the support sheet, "a plurality of layers may be the same or different from each other" means "all layers may be the same or all layers are different". It means that only some of the layers may be the same, and further, "multiple layers are different from each other" means that "at least one of the constituent materials and thicknesses of each layer is different from each other". Means.
支持シートは、透明であってもよいし、不透明であってもよく、目的に応じて着色されていてもよい。
例えば、裏面保護膜形成用フィルムがエネルギー線硬化性を有する場合には、支持シートはエネルギー線を透過させるものが好ましい。
例えば、裏面保護膜形成用フィルムを、支持シートを介して光学的に検査するためには、支持シートは透明であることが好ましい。 The support sheet may be transparent, opaque, or colored depending on the purpose.
For example, when the back surface protective film forming film has energy ray curability, the support sheet preferably allows energy rays to pass through.
For example, in order to optically inspect the back surface protective film forming film via the support sheet, the support sheet is preferably transparent.
例えば、裏面保護膜形成用フィルムがエネルギー線硬化性を有する場合には、支持シートはエネルギー線を透過させるものが好ましい。
例えば、裏面保護膜形成用フィルムを、支持シートを介して光学的に検査するためには、支持シートは透明であることが好ましい。 The support sheet may be transparent, opaque, or colored depending on the purpose.
For example, when the back surface protective film forming film has energy ray curability, the support sheet preferably allows energy rays to pass through.
For example, in order to optically inspect the back surface protective film forming film via the support sheet, the support sheet is preferably transparent.
本実施形態において、ワーク14の回路面は、回路面保護用テープ17に保護されており、前記第二の積層工程の後に、ワーク14の回路面から、回路面保護用テープ17を剥離する剥離工程を含むことができる。本実施形態において、回路面保護用テープ17は、回路面に粘着されている側に、粘着剤層を有する。前記粘着剤層は、ワークに対し適度な再剥離性を有していればその種類は限定されず、ゴム系、アクリル系、シリコーン系、ウレタン系、ビニルエーテル系などの汎用の粘着剤から形成されてもよい。また、エネルギー線の照射により硬化して再剥離性となるエネルギー線硬化型粘着剤から形成されてもよい。粘着剤層がエネルギー線硬化型粘着剤から形成されている場合、前記剥離工程においては、回路面保護用テープ17の粘着剤層にエネルギー線を照射して、粘着剤層を硬化して再剥離を可能にさせることで、ワーク14の回路面から、回路面保護用テープ17を容易に剥離させることができる。
In the present embodiment, the circuit surface of the work 14 is protected by the circuit surface protection tape 17, and after the second laminating step, the circuit surface protection tape 17 is peeled off from the circuit surface of the work 14. Can include steps. In the present embodiment, the circuit surface protection tape 17 has an adhesive layer on the side that is adhered to the circuit surface. The type of the pressure-sensitive adhesive layer is not limited as long as it has an appropriate removability to the work, and is formed of a general-purpose pressure-sensitive adhesive such as rubber-based, acrylic-based, silicone-based, urethane-based, and vinyl ether-based. You may. Further, it may be formed from an energy ray-curable pressure-sensitive adhesive that is cured by irradiation with energy rays and becomes removable. When the pressure-sensitive adhesive layer is formed of an energy ray-curable pressure-sensitive adhesive, in the peeling step, the pressure-sensitive adhesive layer of the circuit surface protection tape 17 is irradiated with energy rays to cure the pressure-sensitive adhesive layer and peel it off again. By enabling this, the circuit surface protection tape 17 can be easily peeled off from the circuit surface of the work 14.
本実施形態の第三積層体の製造方法は、裏面保護膜形成用フィルム13に、支持シート10の側からレーザーを照射してレーザーマーキングする工程を含むものであってもよい。本実施形態の第三積層体の製造方法は、保護層12に、支持シート10を積層するので、支持シート10の側から支持シート及び保護層越しにレーザーを照射すると、裏面保護膜形成用フィルム13の保護層12と接している面にレーザーマーキングすることができる。
本実施形態の第一積層体の製造方法は、裏面保護膜形成用フィルム13又は裏面保護膜13’にレーザーを照射してレーザーマーキングする工程を含むものであってもよい。 The method for producing the third laminated body of the present embodiment may include a step of irradiating the back surface protectivefilm forming film 13 with a laser from the side of the support sheet 10 to perform laser marking. In the method for producing the third laminated body of the present embodiment, since the support sheet 10 is laminated on the protective layer 12, when a laser is irradiated from the side of the support sheet 10 through the support sheet and the protective layer, a film for forming a back surface protective film is formed. The surface of the 13 in contact with the protective layer 12 can be laser-marked.
The method for producing the first laminated body of the present embodiment may include a step of irradiating the back surface protectivefilm forming film 13 or the back surface protective film 13'with a laser to perform laser marking.
本実施形態の第一積層体の製造方法は、裏面保護膜形成用フィルム13又は裏面保護膜13’にレーザーを照射してレーザーマーキングする工程を含むものであってもよい。 The method for producing the third laminated body of the present embodiment may include a step of irradiating the back surface protective
The method for producing the first laminated body of the present embodiment may include a step of irradiating the back surface protective
第一積層体の製造方法及び第三積層体の製造方法において、本実施形態の裏面保護膜形成用複合体1を使用することで、裏面保護膜形成用フィルム13の汚染及び変形が防止される。したがって、裏面保護膜形成用フィルム13を硬化して得られる裏面保護膜13’の汚染及び変形も防止される。裏面保護膜形成用フィルム13又は裏面保護膜13’が汚染及び変形している場合(表面に凹凸を有する場合)、支持シート10越しにレーザーを照射してレーザーマーキングを行った場合、印字に不具合が発生し、印字後の視認性が悪くなるという問題が発生する。
第一積層体の製造方法及び第三積層体の製造方法において、本実施形態の裏面保護膜形成用複合体1を使用することにより、裏面保護膜形成用フィルム13(裏面保護膜13’)の汚染及び変形が抑制され、結果として、上記印字の不具合が抑制され、印字後の視認性が良好となる。 By using the back surface protectivefilm forming composite 1 of the present embodiment in the method for producing the first laminated body and the method for producing the third laminated body, contamination and deformation of the back surface protective film forming film 13 are prevented. .. Therefore, contamination and deformation of the back surface protective film 13'obtained by curing the back surface protective film forming film 13 are also prevented. When the back surface protective film forming film 13 or the back surface protective film 13'is contaminated and deformed (when the surface has irregularities), when laser marking is performed by irradiating the laser through the support sheet 10, printing is defective. Will occur, and the problem of poor visibility after printing will occur.
By using the back surface protectivefilm forming composite 1 of the present embodiment in the method for producing the first laminated body and the method for producing the third laminated body, the back surface protective film forming film 13 (back surface protective film 13') can be obtained. Contamination and deformation are suppressed, and as a result, the above-mentioned printing defects are suppressed, and visibility after printing is improved.
第一積層体の製造方法及び第三積層体の製造方法において、本実施形態の裏面保護膜形成用複合体1を使用することにより、裏面保護膜形成用フィルム13(裏面保護膜13’)の汚染及び変形が抑制され、結果として、上記印字の不具合が抑制され、印字後の視認性が良好となる。 By using the back surface protective
By using the back surface protective
<<第四積層体の製造方法>>
本実施形態の第四積層体の製造方法は、前記第三積層体の製造方法で製造された第三積層体25の、裏面保護膜形成用フィルム13を硬化させて裏面保護膜13’とする硬化工程を含む、ワーク14と、裏面保護膜13’と、保護層12と、支持シート10とが、この順に積層された第四積層体26の製造方法である。
また、本実施形態の第四積層体の製造方法は、前記第一積層体の製造方法で製造された第一積層体23の保護層12に、支持シート10を貼付して、ワーク14と、裏面保護膜13’と、保護層12と、支持シート10とが、この順に積層された第四積層体を得る第二の積層工程を含む、第四積層体26の製造方法である。 << Manufacturing method of the fourth laminated body >>
In the method for producing the fourth laminated body of the present embodiment, the back surface protectivefilm forming film 13 of the third laminated body 25 produced by the method for producing the third laminated body is cured to obtain the back surface protective film 13'. This is a method for manufacturing a fourth laminated body 26 in which a work 14, a back surface protective film 13', a protective layer 12, and a support sheet 10 are laminated in this order, including a curing step.
Further, in the method for manufacturing the fourth laminated body of the present embodiment, thesupport sheet 10 is attached to the protective layer 12 of the first laminated body 23 manufactured by the method for manufacturing the first laminated body, and the work 14 and the work 14 are attached. This is a method for manufacturing a fourth laminated body 26, which includes a second laminating step of obtaining a fourth laminated body in which the back surface protective film 13', the protective layer 12, and the support sheet 10 are laminated in this order.
本実施形態の第四積層体の製造方法は、前記第三積層体の製造方法で製造された第三積層体25の、裏面保護膜形成用フィルム13を硬化させて裏面保護膜13’とする硬化工程を含む、ワーク14と、裏面保護膜13’と、保護層12と、支持シート10とが、この順に積層された第四積層体26の製造方法である。
また、本実施形態の第四積層体の製造方法は、前記第一積層体の製造方法で製造された第一積層体23の保護層12に、支持シート10を貼付して、ワーク14と、裏面保護膜13’と、保護層12と、支持シート10とが、この順に積層された第四積層体を得る第二の積層工程を含む、第四積層体26の製造方法である。 << Manufacturing method of the fourth laminated body >>
In the method for producing the fourth laminated body of the present embodiment, the back surface protective
Further, in the method for manufacturing the fourth laminated body of the present embodiment, the
図10A~Cは、第四積層体の製造方法の実施形態の一例を模式的に示す概略断面図である。本実施形態の第四積層体の製造方法は、前記第三積層体の製造方法における前記第二の積層工程の後に、ワーク14の回路面から、回路面保護用テープ17を剥離する剥離工程(図10A)と、裏面保護膜形成用フィルム13に、支持シート10の側からレーザーを照射してレーザーマーキングする工程(図10B)と、裏面保護膜形成用フィルム13を硬化させて裏面保護膜13’とする硬化工程(図10C)と、を含む。本実施形態では熱硬化性の裏面保護膜形成用フィルムを用いており、本実施形態の硬化工程では、130℃、2hの条件で熱硬化させている。
10A to 10C are schematic cross-sectional views schematically showing an example of an embodiment of a method for manufacturing a fourth laminated body. The method for manufacturing the fourth laminated body of the present embodiment is a peeling step of peeling the circuit surface protection tape 17 from the circuit surface of the work 14 after the second laminating step in the method for manufacturing the third laminated body. FIG. 10A), a step of irradiating the back surface protective film forming film 13 with a laser from the side of the support sheet 10 to perform laser marking (FIG. 10B), and curing the back surface protective film 13 to cure the back surface protective film 13 Includes a curing step (FIG. 10C). In the present embodiment, a thermosetting film for forming a back surface protective film is used, and in the curing step of the present embodiment, the film is thermoset at 130 ° C. for 2 hours.
熱硬化性の裏面保護膜形成用フィルムを熱処理して熱硬化させて、裏面保護膜を形成するときの硬化条件は、裏面保護膜が十分にその機能を発揮する程度の硬化度となる限り、特に限定されず、熱硬化性の裏面保護膜形成用フィルムの種類に応じて、適宜選択すればよい。
When the thermosetting film for forming a back surface protective film is heat-treated and heat-cured to form a back surface protective film, the curing conditions are as long as the degree of curing is such that the back surface protective film sufficiently exerts its function. It is not particularly limited, and may be appropriately selected depending on the type of the thermosetting film for forming the back surface protective film.
例えば、熱硬化時の加熱温度は、100~200℃であることが好ましく、110~180℃であることがより好ましく、120~170℃であることが特に好ましい。そして、前記熱硬化時の加熱時間は、0.5~5時間であることが好ましく、0.5~3時間であることがより好ましく、1~2時間であることが特に好ましい。硬化工程において、熱硬化させる場合、前記剥離工程の順番は、回路面保護用テープ17の耐熱性を考慮して、硬化工程よりも前であることが好ましい。
For example, the heating temperature at the time of thermosetting is preferably 100 to 200 ° C, more preferably 110 to 180 ° C, and particularly preferably 120 to 170 ° C. The heating time during the thermosetting is preferably 0.5 to 5 hours, more preferably 0.5 to 3 hours, and particularly preferably 1 to 2 hours. In the case of thermosetting in the curing step, the order of the peeling steps is preferably before the curing step in consideration of the heat resistance of the circuit surface protection tape 17.
図11A~Cは、第四積層体の製造方法の実施形態の他の一例を模式的に示す概略断面図である。本実施形態の第四積層体の製造方法は、前記第三積層体の製造方法における前記第二の積層工程の後に、ワーク14の回路面から、回路面保護用テープ17を剥離する剥離工程(図11A)と、裏面保護膜形成用フィルム13を硬化させて裏面保護膜13’とする硬化工程(図11B)と、裏面保護膜13’に、支持シート10の側からレーザーを照射してレーザーマーキングする工程(図11C)と、を含む。
11A to 11C are schematic cross-sectional views schematically showing another example of the embodiment of the method for manufacturing the fourth laminated body. The method for manufacturing the fourth laminated body of the present embodiment is a peeling step of peeling the circuit surface protection tape 17 from the circuit surface of the work 14 after the second laminating step in the method for manufacturing the third laminated body. FIG. 11A), a curing step (FIG. 11B) in which the back surface protective film forming film 13 is cured to form the back surface protective film 13', and the back surface protective film 13'is irradiated with a laser from the side of the support sheet 10 to obtain a laser. Includes a marking step (FIG. 11C).
図12A、Bは、第四積層体の製造方法の実施形態の他の一例を模式的に示す概略断面図である。本実施形態の第四積層体の製造方法は、前記第一積層体の製造方法により製造された第一積層体23に、支持シートを貼付する第二の積層工程と、を含む。回路面保護用テープ17を剥離する工程、及び支持シート10の側からレーザーを照射してレーザーマーキングする工程は、第一積層体23を製造する工程内に有していてもよいし、図12A、Bで示される第一積層体23から第四積層体26を製造する工程内に有していてもよい。
12A and 12B are schematic cross-sectional views schematically showing another example of the embodiment of the method for manufacturing the fourth laminated body. The method for producing the fourth laminated body of the present embodiment includes a second laminating step of attaching a support sheet to the first laminated body 23 produced by the method for producing the first laminated body. The step of peeling off the circuit surface protection tape 17 and the step of irradiating the laser from the side of the support sheet 10 to perform laser marking may be included in the step of manufacturing the first laminated body 23, and FIG. 12A , B may be included in the process of manufacturing the first laminated body 23 to the fourth laminated body 26.
<<裏面保護膜付き半導体装置の製造方法>>
図12C~E及び図13A~Cは、裏面保護膜付き半導体装置の製造方法の実施形態の一例を模式的に示す概略断面図である。本実施形態の裏面保護膜付き半導体装置の製造方法は、前記第四積層体の製造方法で製造された第四積層体26の、ワーク14、裏面保護膜13’、及び保護層12をダイシングして、裏面保護膜付き半導体装置22’とする工程(図12C、図12D、図13A、及び図13B)と、裏面保護膜付き半導体装置22’を、保護層12からピックアップする工程(図12E、図13C)とを含む。 << Manufacturing method of semiconductor device with back surface protective film >>
12C to 12C and 13A to 13C are schematic cross-sectional views schematically showing an example of an embodiment of a method for manufacturing a semiconductor device with a back surface protective film. In the method for manufacturing a semiconductor device with a back surface protective film of the present embodiment, thework 14, the back surface protective film 13', and the protective layer 12 of the fourth laminated body 26 manufactured by the method for manufacturing the fourth laminated body are diced. The step of forming the semiconductor device 22'with the back surface protective film (FIGS. 12C, 12D, 13A, and 13B) and the step of picking up the semiconductor device 22'with the back surface protective film from the protective layer 12 (FIGS. 12E, 12E, 13C) and is included.
図12C~E及び図13A~Cは、裏面保護膜付き半導体装置の製造方法の実施形態の一例を模式的に示す概略断面図である。本実施形態の裏面保護膜付き半導体装置の製造方法は、前記第四積層体の製造方法で製造された第四積層体26の、ワーク14、裏面保護膜13’、及び保護層12をダイシングして、裏面保護膜付き半導体装置22’とする工程(図12C、図12D、図13A、及び図13B)と、裏面保護膜付き半導体装置22’を、保護層12からピックアップする工程(図12E、図13C)とを含む。 << Manufacturing method of semiconductor device with back surface protective film >>
12C to 12C and 13A to 13C are schematic cross-sectional views schematically showing an example of an embodiment of a method for manufacturing a semiconductor device with a back surface protective film. In the method for manufacturing a semiconductor device with a back surface protective film of the present embodiment, the
図14A~Dは、裏面保護膜付き半導体装置の製造方法の実施形態の他の一例を模式的に示す概略断面図である。本実施形態の裏面保護膜付き半導体装置の製造方法は、前記第三積層体の製造方法で製造された第三積層体25の、裏面保護膜形成用フィルム13、ワーク14及び保護層12をダイシングして、裏面保護膜形成用フィルム付き半導体装置22とする工程(図14A及び図14B)と、裏面保護膜形成用フィルム13を硬化させて裏面保護膜13’とする硬化工程(図14C)と、裏面保護膜付き半導体装置22’を、支持シート10(保護層12)からピックアップする工程(図14D)とを含む。
14A to 14D are schematic cross-sectional views schematically showing another example of the embodiment of the method for manufacturing a semiconductor device with a back surface protective film. In the method for manufacturing the semiconductor device with the back surface protective film of the present embodiment, the back surface protective film forming film 13, the work 14 and the protective layer 12 of the third laminate 25 manufactured by the method for manufacturing the third laminate are diced. Then, the step of forming the semiconductor device 22 with the back surface protective film forming film (FIGS. 14A and 14B) and the curing step of curing the back surface protective film forming film 13 to form the back surface protective film 13'(FIG. 14C). The step (FIG. 14D) of picking up the semiconductor device 22'with the back surface protective film from the support sheet 10 (protective layer 12) is included.
上述の半導体装置の製造方法におけるダイシングは、ブレードを用いるブレードダイシング、レーザー照射によるレーザーダイシング、又は研磨剤を含む水の吹き付けによるウォーターダイシング等の各ダイシングによって行うことができる。これらのダイシングでは、支持シート上で、保護層及び裏面保護膜(裏面保護膜形成用フィルム)を介して保持されている保護層及び裏面保護膜(裏面保護膜形成用フィルム)、ワークごと切断する。
The dicing in the above-mentioned method for manufacturing a semiconductor device can be performed by each dicing such as blade dicing using a blade, laser dicing by laser irradiation, or water dicing by spraying water containing an abrasive. In these dicings, the protective layer, the back surface protective film (film for forming the back surface protective film), and the work are cut together on the support sheet. ..
また、上述の半導体装置の製造方法におけるダイシングは、ステルスダイシング(登録商標)によっておこなうこともできる。ステルスダイシング(登録商標)では、まず、ウエハの内部において、分割予定箇所を設定し、この箇所を焦点として、この焦点に集束するように、レーザー光を照射することにより、ウエハの内部に改質層を形成する。ウエハの改質層は、ウエハの他の箇所とは異なり、レーザー光の照射によって変質しており、強度が弱くなっている。そのため、ウエハに力が加えられることにより、ウエハの内部の改質層において、ウエハの両面方向に延びる亀裂が発生し、ウエハの分割(切断)の起点となる。次いで、ウエハに力を加えて、前記改質層の部位においてウエハを分割し、チップを作製する。このとき、例えば、支持シート上で、保護層及び裏面保護膜(裏面保護膜形成用フィルム)を介して保持されている、改質層が形成されたウエハを、支持シート、保護層、裏面保護膜(裏面保護膜形成用フィルム)とともに、ウエハの表面に対して平行な方向に引き延ばすことによって、ウエハに力を加えて、裏面保護膜付きチップを作製できる。
Further, the dicing in the above-mentioned manufacturing method of the semiconductor device can also be performed by stealth dicing (registered trademark). In stealth dicing (registered trademark), first, a planned division portion is set inside the wafer, and the inside of the wafer is modified by irradiating a laser beam so as to focus on this focal point. Form a layer. Unlike other parts of the wafer, the modified layer of the wafer is altered by irradiation with laser light, and its strength is weakened. Therefore, when a force is applied to the wafer, cracks extending in both sides of the wafer are generated in the modified layer inside the wafer, which serves as a starting point for dividing (cutting) the wafer. Next, a force is applied to the wafer to divide the wafer at the site of the modified layer to prepare chips. At this time, for example, the wafer on which the modified layer is formed, which is held on the support sheet via the protective layer and the back surface protective film (film for forming the back surface protective film), is protected by the support sheet, the protective layer, and the back surface. A chip with a back surface protective film can be produced by applying a force to the wafer by stretching the film (film for forming a back surface protective film) in a direction parallel to the surface of the wafer.
本実施形態の裏面保護膜付き半導体装置の製造方法は、裏面保護膜形成用フィルム13が熱硬化性であり、本実施形態の裏面保護膜とする工程では、例えば、裏面保護膜形成用フィルム13を、130℃、2hの条件で熱硬化させている。
In the method for manufacturing a semiconductor device with a back surface protective film of the present embodiment, the back surface protective film forming film 13 is thermosetting, and in the step of forming the back surface protective film of the present embodiment, for example, the back surface protective film forming film 13 Is thermoset at 130 ° C. for 2 hours.
熱硬化性の裏面保護膜形成用フィルムを熱硬化させて、裏面保護膜を形成するときの硬化条件は、上述の通り、裏面保護膜が十分にその機能を発揮する程度の硬化度となる限り、特に限定されず、熱硬化性の裏面保護膜形成用フィルムの種類に応じて、適宜選択すればよい。
As described above, the curing conditions for forming the back surface protective film by thermosetting the thermosetting film for forming the back surface protective film are as long as the degree of curing is such that the back surface protective film sufficiently exerts its function. The method is not particularly limited, and may be appropriately selected depending on the type of the thermosetting film for forming the back surface protective film.
本実施形態の裏面保護膜付き半導体装置の製造方法は、裏面保護膜形成用フィルム13がエネルギー線硬化性であり、前記裏面保護膜とする工程では、裏面保護膜形成用フィルム13にエネルギー線を照射してエネルギー線硬化させる工程であってもよい。
In the method for manufacturing a semiconductor device with a back surface protective film of the present embodiment, the back surface protective film forming film 13 is energy ray curable, and in the step of forming the back surface protective film, energy rays are applied to the back surface protective film forming film 13. It may be a step of irradiating and curing the energy ray.
エネルギー線硬化性の裏面保護膜形成用フィルムをエネルギー線硬化させて、裏面保護膜を形成するときの硬化条件は、裏面保護膜が十分にその機能を発揮する程度の硬化度となる限り特に限定されず、エネルギー線硬化性裏面保護膜形成用フィルムの種類に応じて、適宜選択すればよい。
例えば、エネルギー線硬化性裏面保護膜形成用フィルムのエネルギー線硬化時における、エネルギー線の照度は、4~280mW/cm2であることが好ましい。そして、前記硬化時における、エネルギー線の光量は、3~1000mJ/cm2であることが好ましい。 The curing conditions when the energy ray-curable back surface protective film forming film is energy ray-cured to form the back surface protective film are particularly limited as long as the degree of curing is such that the back surface protective film sufficiently exerts its function. However, it may be appropriately selected depending on the type of the energy ray-curable back surface protective film forming film.
For example, the illuminance of the energy ray at the time of energy ray curing of the energy ray curable back surface protective film forming film is preferably 4 to 280 mW / cm 2. The amount of light of the energy rays at the time of curing is preferably 3 to 1000 mJ / cm 2.
例えば、エネルギー線硬化性裏面保護膜形成用フィルムのエネルギー線硬化時における、エネルギー線の照度は、4~280mW/cm2であることが好ましい。そして、前記硬化時における、エネルギー線の光量は、3~1000mJ/cm2であることが好ましい。 The curing conditions when the energy ray-curable back surface protective film forming film is energy ray-cured to form the back surface protective film are particularly limited as long as the degree of curing is such that the back surface protective film sufficiently exerts its function. However, it may be appropriately selected depending on the type of the energy ray-curable back surface protective film forming film.
For example, the illuminance of the energy ray at the time of energy ray curing of the energy ray curable back surface protective film forming film is preferably 4 to 280 mW / cm 2. The amount of light of the energy rays at the time of curing is preferably 3 to 1000 mJ / cm 2.
エネルギー線硬化性の裏面保護膜形成用フィルムとしては、例えば、国際公開第2017/188200号、国際公開第2017/188218号に開示されたものを用いることもできる。
As the energy ray-curable back surface protective film forming film, for example, those disclosed in International Publication No. 2017/188200 and International Publication No. 2017/188218 can also be used.
保護層12を有さない場合、裏面保護膜付き半導体装置22’は、支持シート10からピックアップされることになる。裏面保護膜形成用フィルム13として、熱硬化性フィルムを使用した場合、硬化後の裏面保護膜13’と支持シート10との粘着力が大きくなり、ピックアップが困難になることがある。この場合、支持シートの粘着剤成分の組成等を調整する必要がある。
一方、本実施形態の裏面保護膜形成用複合体1を用いると、裏面保護膜付き半導体装置22’は、保護層12からピックアップすることになる。この場合、保護層12と支持シート10との粘着力を充分に大きくしておけば、裏面保護膜付き半導体装置22’と保護層12の粘着力に関し最適化を行わなくても、ピックアップを容易に行うことができる。 When theprotective layer 12 is not provided, the semiconductor device 22'with the back surface protective film is picked up from the support sheet 10. When a thermosetting film is used as the back surface protective film forming film 13, the adhesive force between the back surface protective film 13'after curing and the support sheet 10 becomes large, which may make picking up difficult. In this case, it is necessary to adjust the composition of the pressure-sensitive adhesive component of the support sheet.
On the other hand, when the back surface protectivefilm forming composite 1 of the present embodiment is used, the semiconductor device 22'with the back surface protective film picks up from the protective layer 12. In this case, if the adhesive strength between the protective layer 12 and the support sheet 10 is sufficiently increased, pickup can be easily performed without optimizing the adhesive strength between the semiconductor device 22'with the back surface protective film and the protective layer 12. Can be done.
一方、本実施形態の裏面保護膜形成用複合体1を用いると、裏面保護膜付き半導体装置22’は、保護層12からピックアップすることになる。この場合、保護層12と支持シート10との粘着力を充分に大きくしておけば、裏面保護膜付き半導体装置22’と保護層12の粘着力に関し最適化を行わなくても、ピックアップを容易に行うことができる。 When the
On the other hand, when the back surface protective
以下、具体的実施例により、本発明についてより詳細に説明する。ただし、本発明は、以下に示す実施例に、何ら限定されるものではない。
Hereinafter, the present invention will be described in more detail with reference to specific examples. However, the present invention is not limited to the examples shown below.
<搬送工程における裏面保護膜形成用フィルムの変形抑制の評価>
設定温度40℃のテーブル上に後述の実施例1~3及び比較例1で得られた裏面保護膜形成用複合体付ウエハを半導体ウエハの側を下向きにしてセットし、1分間放置した。この際、テーブルの表面温度の測定値は37~38℃であった。裏面保護膜形成用複合体付ウエハの上側から吸着穴を有する標準の8”I型ロボットアーム(アーム先端部の吸着エリア:直径34mm)を用いて、裏面保護膜形成用複合体付ウエハを30分間、真空源-80kPa以下の条件で吸着保持した。その後、裏面保護膜形成用複合体付ウエハを、常温のテーブルに半導体ウエハの側を下向きにしてセットし、ロボットアームの吸着を止めた。裏面保護膜形成用複合体付ウエハの上面を目視で確認し、全く吸着跡が見えないものをA、吸着跡が見えるものをBとした。 <Evaluation of deformation suppression of film for forming backside protective film in transfer process>
The wafers with the composite for forming the back surface protective film obtained in Examples 1 to 3 and Comparative Example 1 described later were set on a table at a set temperature of 40 ° C. with the semiconductor wafer side facing down, and left for 1 minute. At this time, the measured value of the surface temperature of the table was 37 to 38 ° C. Using a standard 8 "I-type robot arm (suction area at the tip of the arm: diameter 34 mm) having suction holes from the upper side of the wafer with the back surface protective film forming composite, 30 wafers with the back surface protective film forming composite are used. The wafer was adsorbed and held for a minute at a vacuum source of −80 kPa or less. After that, the wafer with the composite for forming the back surface protective film was set on a table at room temperature with the semiconductor wafer side facing down, and the adsorption of the robot arm was stopped. The upper surface of the wafer with the composite for forming the back surface protective film was visually confirmed, and the wafer in which no adsorption trace was visible was designated as A, and the wafer in which the adsorption trace was visible was designated as B.
設定温度40℃のテーブル上に後述の実施例1~3及び比較例1で得られた裏面保護膜形成用複合体付ウエハを半導体ウエハの側を下向きにしてセットし、1分間放置した。この際、テーブルの表面温度の測定値は37~38℃であった。裏面保護膜形成用複合体付ウエハの上側から吸着穴を有する標準の8”I型ロボットアーム(アーム先端部の吸着エリア:直径34mm)を用いて、裏面保護膜形成用複合体付ウエハを30分間、真空源-80kPa以下の条件で吸着保持した。その後、裏面保護膜形成用複合体付ウエハを、常温のテーブルに半導体ウエハの側を下向きにしてセットし、ロボットアームの吸着を止めた。裏面保護膜形成用複合体付ウエハの上面を目視で確認し、全く吸着跡が見えないものをA、吸着跡が見えるものをBとした。 <Evaluation of deformation suppression of film for forming backside protective film in transfer process>
The wafers with the composite for forming the back surface protective film obtained in Examples 1 to 3 and Comparative Example 1 described later were set on a table at a set temperature of 40 ° C. with the semiconductor wafer side facing down, and left for 1 minute. At this time, the measured value of the surface temperature of the table was 37 to 38 ° C. Using a standard 8 "I-type robot arm (suction area at the tip of the arm: diameter 34 mm) having suction holes from the upper side of the wafer with the back surface protective film forming composite, 30 wafers with the back surface protective film forming composite are used. The wafer was adsorbed and held for a minute at a vacuum source of −80 kPa or less. After that, the wafer with the composite for forming the back surface protective film was set on a table at room temperature with the semiconductor wafer side facing down, and the adsorption of the robot arm was stopped. The upper surface of the wafer with the composite for forming the back surface protective film was visually confirmed, and the wafer in which no adsorption trace was visible was designated as A, and the wafer in which the adsorption trace was visible was designated as B.
(裏面保護膜形成用フィルムの製造)
ポリエチレンテレフタレート(PET)フィルムの片面にシリコーン系の剥離剤層が形成されてなる第1の剥離シート(リンテック社製:SP-PET5011、厚さ50μm)と、PETフィルムの片面にシリコーン系の剥離剤層が形成されてなる第2の剥離シート(リンテック社製:SP-PET381031、厚さ38μm)とを用意した。 (Manufacturing of film for forming backside protective film)
A first release sheet (Lintec Corporation: SP-PET5011, thickness 50 μm) in which a silicone-based release agent layer is formed on one side of a polyethylene terephthalate (PET) film, and a silicone-based release agent on one side of the PET film. A second release sheet (manufactured by Lintec Corporation: SP-PET38131, thickness 38 μm) on which a layer was formed was prepared.
ポリエチレンテレフタレート(PET)フィルムの片面にシリコーン系の剥離剤層が形成されてなる第1の剥離シート(リンテック社製:SP-PET5011、厚さ50μm)と、PETフィルムの片面にシリコーン系の剥離剤層が形成されてなる第2の剥離シート(リンテック社製:SP-PET381031、厚さ38μm)とを用意した。 (Manufacturing of film for forming backside protective film)
A first release sheet (Lintec Corporation: SP-PET5011, thickness 50 μm) in which a silicone-based release agent layer is formed on one side of a polyethylene terephthalate (PET) film, and a silicone-based release agent on one side of the PET film. A second release sheet (manufactured by Lintec Corporation: SP-PET38131, thickness 38 μm) on which a layer was formed was prepared.
第1の剥離シートの剥離面上に、裏面保護膜形成用フィルム用塗布溶液をナイフコーターにて塗布した後、オーブンにて120℃で2分間乾燥させて、厚さ40μmの裏面保護膜形成用フィルムを形成した。次いで、裏面保護膜形成用フィルムに第2の剥離シートの剥離面を重ねて両者を貼り合わせ、第1の剥離シートと、裏面保護膜形成用フィルム(リンテック社製:LC2846、厚さ:40μm)と、第2の剥離シートからなる裏面保護膜形成用シートを得た。
A coating solution for a film for forming a back surface protective film is applied on the peeled surface of the first release sheet with a knife coater, and then dried in an oven at 120 ° C. for 2 minutes to form a back surface protective film having a thickness of 40 μm. A film was formed. Next, the peeling surface of the second release sheet was overlapped with the back surface protective film forming film and both were bonded to each other, and the first release sheet and the back surface protective film forming film (Lintec Corporation: LC2846, thickness: 40 μm). A sheet for forming a back surface protective film made of a second release sheet was obtained.
(保護層)
前述の第1の剥離シートである、ポリエチレンテレフタレート(PET)フィルムの片面にシリコーン系の剥離剤層が形成されてなるシート(リンテック社製:SP-PET5011、厚さ50μm)を保護層1として用いた。 (Protective layer)
A sheet (manufactured by Lintec Corporation: SP-PET5011, thickness 50 μm) having a silicone-based release agent layer formed on one side of a polyethylene terephthalate (PET) film, which is the first release sheet described above, is used as theprotective layer 1. board.
前述の第1の剥離シートである、ポリエチレンテレフタレート(PET)フィルムの片面にシリコーン系の剥離剤層が形成されてなるシート(リンテック社製:SP-PET5011、厚さ50μm)を保護層1として用いた。 (Protective layer)
A sheet (manufactured by Lintec Corporation: SP-PET5011, thickness 50 μm) having a silicone-based release agent layer formed on one side of a polyethylene terephthalate (PET) film, which is the first release sheet described above, is used as the
保護層2形成用フィルムを以下の方法で製造した。
アクリル系重合体(100質量部、固形分)、及び3官能キシリレンジイソシアネート系架橋剤(三井武田ケミカル社製:タケネートD110N)(10.7質量部、固形分)を含有し、さらに溶媒としてメチルエチルケトンを含有する、固形分濃度が30質量%の粘着剤組成物を調製した。なお、前記アクリル系重合体は、アクリル酸-2-エチルヘキシル(36質量部)、アクリル酸ブチル(59質量部)、及びアクリル酸-2-ヒドロキシエチル(5質量部)を共重合してなる、重量平均分子量が600,000のものである。
ポリエチレンテレフタレート(PET)フィルムの片面がシリコーン処理により剥離処理された剥離フィルム(リンテック社製:SP-PET381031、厚さ38μm)の剥離処理面に、前記粘着剤組成物を塗工し、120℃で2分間加熱乾燥させることにより、厚さ5μmの粘着剤層を形成した。
次いで、この粘着剤層の露出面に、基材としてポリプロピレン系フィルム(ヤング率400MPa、厚さ80μm)を貼り合せることにより、前記基材の一方の表面上に前記粘着剤層を備えた保護層2形成用フィルムを得た。 A film for forming the protective layer 2 was produced by the following method.
It contains an acrylic polymer (100 parts by mass, solid content) and a trifunctional xylylene diisocyanate-based cross-linking agent (Mitsui Takeda Chemical Co., Ltd .: Takenate D110N) (10.7 parts by mass, solid content), and methyl ethyl ketone as a solvent. A pressure-sensitive adhesive composition having a solid content concentration of 30% by mass was prepared. The acrylic polymer is obtained by copolymerizing -2-ethylhexyl acrylate (36 parts by mass), butyl acrylate (59 parts by mass), and -2-hydroxyethyl acrylate (5 parts by mass). The weight average molecular weight is 600,000.
The pressure-sensitive adhesive composition is applied to the peel-treated surface of a release film (Lintec Corporation: SP-PET38131, thickness 38 μm) in which one side of a polyethylene terephthalate (PET) film is peel-treated by silicone treatment, and at 120 ° C. By heating and drying for 2 minutes, a pressure-sensitive adhesive layer having a thickness of 5 μm was formed.
Next, a polypropylene film (Young's modulus 400 MPa, thickness 80 μm) is attached to the exposed surface of the pressure-sensitive adhesive layer as a base material, so that a protective layer having the pressure-sensitive adhesive layer on one surface of the base material is provided. 2 A film for forming was obtained.
アクリル系重合体(100質量部、固形分)、及び3官能キシリレンジイソシアネート系架橋剤(三井武田ケミカル社製:タケネートD110N)(10.7質量部、固形分)を含有し、さらに溶媒としてメチルエチルケトンを含有する、固形分濃度が30質量%の粘着剤組成物を調製した。なお、前記アクリル系重合体は、アクリル酸-2-エチルヘキシル(36質量部)、アクリル酸ブチル(59質量部)、及びアクリル酸-2-ヒドロキシエチル(5質量部)を共重合してなる、重量平均分子量が600,000のものである。
ポリエチレンテレフタレート(PET)フィルムの片面がシリコーン処理により剥離処理された剥離フィルム(リンテック社製:SP-PET381031、厚さ38μm)の剥離処理面に、前記粘着剤組成物を塗工し、120℃で2分間加熱乾燥させることにより、厚さ5μmの粘着剤層を形成した。
次いで、この粘着剤層の露出面に、基材としてポリプロピレン系フィルム(ヤング率400MPa、厚さ80μm)を貼り合せることにより、前記基材の一方の表面上に前記粘着剤層を備えた保護層2形成用フィルムを得た。 A film for forming the protective layer 2 was produced by the following method.
It contains an acrylic polymer (100 parts by mass, solid content) and a trifunctional xylylene diisocyanate-based cross-linking agent (Mitsui Takeda Chemical Co., Ltd .: Takenate D110N) (10.7 parts by mass, solid content), and methyl ethyl ketone as a solvent. A pressure-sensitive adhesive composition having a solid content concentration of 30% by mass was prepared. The acrylic polymer is obtained by copolymerizing -2-ethylhexyl acrylate (36 parts by mass), butyl acrylate (59 parts by mass), and -2-hydroxyethyl acrylate (5 parts by mass). The weight average molecular weight is 600,000.
The pressure-sensitive adhesive composition is applied to the peel-treated surface of a release film (Lintec Corporation: SP-PET38131, thickness 38 μm) in which one side of a polyethylene terephthalate (PET) film is peel-treated by silicone treatment, and at 120 ° C. By heating and drying for 2 minutes, a pressure-sensitive adhesive layer having a thickness of 5 μm was formed.
Next, a polypropylene film (Young's modulus 400 MPa, thickness 80 μm) is attached to the exposed surface of the pressure-sensitive adhesive layer as a base material, so that a protective layer having the pressure-sensitive adhesive layer on one surface of the base material is provided. 2 A film for forming was obtained.
保護層3形成用フィルムとして、保護層2形成用フィルムの製造で使用したポリプロピレン系フィルムを使用した(粘着剤層無し)。
As the protective layer 3 forming film, the polypropylene film used in the production of the protective layer 2 forming film was used (without the adhesive layer).
[実施例1]
裏面保護膜形成用フィルム側の第2の剥離シートを剥がし、露出した面を8インチ半導体ウエハ(厚さ300μm)に貼付し、さらに第1の剥離シートを保護層1として残した状態で裏面保護膜形成用複合体A付ウエハを得た。
裏面保護膜形成用複合体A付ウエハについて、上述の方法で、搬送工程における裏面保護膜形成用フィルムの変形評価を行った。上記評価における吸着圧及び結果を表1に示す。 [Example 1]
The second release sheet on the back surface protective film forming film side is peeled off, the exposed surface is attached to an 8-inch semiconductor wafer (thickness 300 μm), and the back surface is protected with the first release sheet left as theprotective layer 1. A wafer with a film-forming complex A was obtained.
With respect to the wafer with the back surface protective film forming composite A, the deformation of the back surface protective film forming film in the conveying step was evaluated by the above-mentioned method. Table 1 shows the adsorption pressure and the results in the above evaluation.
裏面保護膜形成用フィルム側の第2の剥離シートを剥がし、露出した面を8インチ半導体ウエハ(厚さ300μm)に貼付し、さらに第1の剥離シートを保護層1として残した状態で裏面保護膜形成用複合体A付ウエハを得た。
裏面保護膜形成用複合体A付ウエハについて、上述の方法で、搬送工程における裏面保護膜形成用フィルムの変形評価を行った。上記評価における吸着圧及び結果を表1に示す。 [Example 1]
The second release sheet on the back surface protective film forming film side is peeled off, the exposed surface is attached to an 8-inch semiconductor wafer (thickness 300 μm), and the back surface is protected with the first release sheet left as the
With respect to the wafer with the back surface protective film forming composite A, the deformation of the back surface protective film forming film in the conveying step was evaluated by the above-mentioned method. Table 1 shows the adsorption pressure and the results in the above evaluation.
[実施例2]
裏面保護膜形成用フィルム側の第2の剥離シートを剥がし、露出した面を8インチ半導体ウエハ(厚さ300μm)に貼付し、さらに第1の剥離シートを剥がして露出した裏面保護膜形成用フィルムに、保護層2形成用フィルムの剥離フィルムを剥がし露出した粘着剤層を貼付し、裏面保護膜形成用複合体B付ウエハを得た。
裏面保護膜形成用複合体B付ウエハについて、上述の方法で、搬送工程における裏面保護膜形成用フィルムの変形評価を行った。上記評価における吸着圧及び結果を表1に示す。 [Example 2]
The second release sheet on the back surface protective film forming film side is peeled off, the exposed surface is attached to an 8-inch semiconductor wafer (thickness 300 μm), and the first release sheet is further peeled off to expose the back surface protective film forming film. The release film of the protective layer 2 forming film was peeled off and an exposed pressure-sensitive adhesive layer was attached thereto to obtain a wafer with a composite B for forming a back surface protective film.
With respect to the wafer with the back surface protective film forming composite B, the deformation of the back surface protective film forming film in the conveying step was evaluated by the above-mentioned method. Table 1 shows the adsorption pressure and the results in the above evaluation.
裏面保護膜形成用フィルム側の第2の剥離シートを剥がし、露出した面を8インチ半導体ウエハ(厚さ300μm)に貼付し、さらに第1の剥離シートを剥がして露出した裏面保護膜形成用フィルムに、保護層2形成用フィルムの剥離フィルムを剥がし露出した粘着剤層を貼付し、裏面保護膜形成用複合体B付ウエハを得た。
裏面保護膜形成用複合体B付ウエハについて、上述の方法で、搬送工程における裏面保護膜形成用フィルムの変形評価を行った。上記評価における吸着圧及び結果を表1に示す。 [Example 2]
The second release sheet on the back surface protective film forming film side is peeled off, the exposed surface is attached to an 8-inch semiconductor wafer (thickness 300 μm), and the first release sheet is further peeled off to expose the back surface protective film forming film. The release film of the protective layer 2 forming film was peeled off and an exposed pressure-sensitive adhesive layer was attached thereto to obtain a wafer with a composite B for forming a back surface protective film.
With respect to the wafer with the back surface protective film forming composite B, the deformation of the back surface protective film forming film in the conveying step was evaluated by the above-mentioned method. Table 1 shows the adsorption pressure and the results in the above evaluation.
[実施例3]
裏面保護膜形成用フィルム側の第2の剥離シートを剥がし、露出した面を8インチ半導体ウエハ(厚さ300μm)に貼付し、さらに第1の剥離シートを剥がして露出した裏面保護膜形成用フィルムに、保護層3形成用フィルムを貼付し、裏面保護膜形成用複合体C付ウエハを得た。
裏面保護膜形成用複合体C付ウエハについて、上述の方法で、搬送工程における裏面保護膜形成用フィルムの変形評価を行った。上記評価における吸着圧及び結果を表1に示す。 [Example 3]
The second release sheet on the back surface protective film forming film side is peeled off, the exposed surface is attached to an 8-inch semiconductor wafer (thickness 300 μm), and the first release sheet is further peeled off to expose the back surface protective film forming film. A film for forming theprotective layer 3 was attached to the wafer to obtain a wafer with the composite C for forming the back surface protective film.
With respect to the wafer with the back surface protective film forming composite C, the deformation of the back surface protective film forming film in the conveying step was evaluated by the above-mentioned method. Table 1 shows the adsorption pressure and the results in the above evaluation.
裏面保護膜形成用フィルム側の第2の剥離シートを剥がし、露出した面を8インチ半導体ウエハ(厚さ300μm)に貼付し、さらに第1の剥離シートを剥がして露出した裏面保護膜形成用フィルムに、保護層3形成用フィルムを貼付し、裏面保護膜形成用複合体C付ウエハを得た。
裏面保護膜形成用複合体C付ウエハについて、上述の方法で、搬送工程における裏面保護膜形成用フィルムの変形評価を行った。上記評価における吸着圧及び結果を表1に示す。 [Example 3]
The second release sheet on the back surface protective film forming film side is peeled off, the exposed surface is attached to an 8-inch semiconductor wafer (thickness 300 μm), and the first release sheet is further peeled off to expose the back surface protective film forming film. A film for forming the
With respect to the wafer with the back surface protective film forming composite C, the deformation of the back surface protective film forming film in the conveying step was evaluated by the above-mentioned method. Table 1 shows the adsorption pressure and the results in the above evaluation.
[比較例1]
裏面保護膜形成用フィルム側の第2の剥離シートを剥がし、露出した面を8インチ半導体ウエハ(厚さ300μm)に貼付し、さらに第1の剥離シートを剥がし、裏面保護膜形成用フィルム付ウエハを得た。
裏面保護膜形成用フィルム付ウエハについて、上述の方法で、搬送工程における裏面保護膜形成用フィルムの変形評価を行った。上記評価における吸着圧及び結果を表1に示す。 [Comparative Example 1]
The second release sheet on the back surface protective film forming film side is peeled off, the exposed surface is attached to an 8-inch semiconductor wafer (thickness 300 μm), and the first release sheet is further peeled off to form a wafer with a back surface protective film forming film. Got
With respect to the wafer with the film for forming the back surface protective film, the deformation of the film for forming the back surface protective film in the transport step was evaluated by the above method. Table 1 shows the adsorption pressure and the results in the above evaluation.
裏面保護膜形成用フィルム側の第2の剥離シートを剥がし、露出した面を8インチ半導体ウエハ(厚さ300μm)に貼付し、さらに第1の剥離シートを剥がし、裏面保護膜形成用フィルム付ウエハを得た。
裏面保護膜形成用フィルム付ウエハについて、上述の方法で、搬送工程における裏面保護膜形成用フィルムの変形評価を行った。上記評価における吸着圧及び結果を表1に示す。 [Comparative Example 1]
The second release sheet on the back surface protective film forming film side is peeled off, the exposed surface is attached to an 8-inch semiconductor wafer (thickness 300 μm), and the first release sheet is further peeled off to form a wafer with a back surface protective film forming film. Got
With respect to the wafer with the film for forming the back surface protective film, the deformation of the film for forming the back surface protective film in the transport step was evaluated by the above method. Table 1 shows the adsorption pressure and the results in the above evaluation.
本発明の保護層を有する実施例1~3では吸着跡が全く確認されなかった。一方、本発明の保護層を有しない比較例1では、吸着跡が確認された。
No adsorption traces were confirmed in Examples 1 to 3 having the protective layer of the present invention. On the other hand, in Comparative Example 1 having no protective layer of the present invention, adsorption traces were confirmed.
本発明の裏面保護膜形成用複合体は、裏面保護膜付き半導体装置の製造に用いることができる。
The back surface protective film forming composite of the present invention can be used for manufacturing a semiconductor device with a back surface protective film.
1・・・裏面保護膜形成用複合体、2・・・裏面保護膜形成用複合体、3・・・裏面保護膜成形用複合体、7・・・裏面保護膜付き半導体チップ、8・・・半導体ウエハ、8a・・・半導体ウエハの回路面、8b・・・半導体ウエハの裏面、9・・・半導体チップ、10・・・支持シート、101・・・基材、102・・・粘着剤層、12・・・保護層、13・・・裏面保護膜形成用フィルム、13’・・・裏面保護膜、14・・・ワーク、14a・・・ワークの回路面、14b・・・ワーク14の裏面、151・・・剥離フィルム、152・・・剥離フィルム、17・・・回路面保護用テープ、18・・・固定用治具、21・・・半導体装置、22・・・裏面保護膜形成用フィルム付き半導体装置、22’・・・裏面保護膜付き半導体装置、23・・・第一積層体、24・・・第二積層体、25・・・第三積層体、26・・・第四積層体
1 ... Complex for forming a back surface protective film, 2 ... Composite for forming a back surface protective film, 3 ... Composite for forming a back surface protective film, 7 ... Semiconductor chip with a back surface protective film, 8 ... -Semiconductor wafer, 8a ... Circuit surface of semiconductor wafer, 8b ... Back surface of semiconductor wafer, 9 ... Semiconductor chip, 10 ... Support sheet, 101 ... Base material, 102 ... Adhesive Layers, 12 ... Protective layer, 13 ... Backside protective film forming film, 13'... Backside protective film, 14 ... Work, 14a ... Work circuit surface, 14b ... Work 14 Back surface, 151 ... release film, 152 ... release film, 17 ... circuit surface protection tape, 18 ... fixing jig, 21 ... semiconductor device, 22 ... back surface protection film Semiconductor device with forming film, 22'... Semiconductor device with backside protective film, 23 ... First laminate, 24 ... Second laminate, 25 ... Third laminate, 26 ... Fourth laminated body
Claims (7)
- 保護層と、裏面保護膜形成用フィルムとが積層されてなる裏面保護膜形成用複合体であって、
半導体基板の裏面に、前記裏面保護膜形成用フィルムを貼付して、前記半導体基板と、前記裏面保護膜形成用フィルムと、前記保護層とがこの順に積層された第二積層体を得る第一の積層工程と、
前記第二積層体の前記裏面保護膜形成用フィルムを硬化させて裏面保護膜とする硬化工程と、
前記第一の積層工程から前記硬化工程に前記第二積層体を搬送する搬送工程とを含む、前記半導体基板と、前記裏面保護膜と、前記保護層とがこの順に積層された第一積層体の製造方法に用いられる、裏面保護膜形成用複合体。 A back surface protective film forming composite in which a protective layer and a back surface protective film forming film are laminated.
First, the back surface protective film forming film is attached to the back surface of the semiconductor substrate to obtain a second laminate in which the semiconductor substrate, the back surface protective film forming film, and the protective layer are laminated in this order. Laminating process and
A curing step of curing the back surface protective film forming film of the second laminate to obtain a back surface protective film,
A first laminated body in which the semiconductor substrate, the back surface protective film, and the protective layer are laminated in this order, which includes a transport step of transporting the second laminated body from the first laminating step to the curing step. A complex for forming a back surface protective film, which is used in the manufacturing method of. - 保護層と、裏面保護膜形成用フィルムとが積層されてなる裏面保護膜形成用複合体であって、
半導体基板の裏面に、前記裏面保護膜形成用フィルムを貼付して、前記半導体基板と、前記裏面保護膜形成用フィルムと、前記保護層とがこの順に積層された第二積層体を得る第一の積層工程と、
前記第二積層体の前記保護層に、支持シートを貼付して、前記半導体基板と、前記裏面保護膜形成用フィルムと、前記保護層と、前記支持シートとがこの順に積層された第三積層体を得る第二の積層工程と、
前記第一の積層工程から前記第二の積層工程に前記第二積層体を搬送する搬送工程と、を含む第三積層体の製造方法に用いられる、裏面保護膜形成用複合体。 A back surface protective film forming composite in which a protective layer and a back surface protective film forming film are laminated.
First, the back surface protective film forming film is attached to the back surface of the semiconductor substrate to obtain a second laminate in which the semiconductor substrate, the back surface protective film forming film, and the protective layer are laminated in this order. Laminating process and
A support sheet is attached to the protective layer of the second laminate, and the semiconductor substrate, the back surface protective film forming film, the protective layer, and the support sheet are laminated in this order. The second laminating process to get the body,
A back surface protective film forming composite used in a method for producing a third laminated body, which comprises a transporting step of transporting the second laminated body from the first laminating step to the second laminating step. - 半導体基板と、裏面保護膜と、保護層とがこの順に積層された第一積層体の製造方法であって、
前記半導体基板の裏面に、請求項1に記載の裏面保護膜形成用複合体の前記裏面保護膜形成用フィルムを貼付して、前記半導体基板と、前記裏面保護膜形成用フィルムと、前記保護層とがこの順に積層された第二積層体を得る第一の積層工程と、
前記第二積層体の前記裏面保護膜形成用フィルムを硬化させて裏面保護膜とする硬化工程と、
前記第一の積層工程から前記硬化工程に前記第二積層体を搬送する搬送工程とを含む、第一積層体の製造方法。 A method for manufacturing a first laminated body in which a semiconductor substrate, a back surface protective film, and a protective layer are laminated in this order.
The back surface protective film forming film of the back surface protective film forming composite according to claim 1 is attached to the back surface of the semiconductor substrate, and the semiconductor substrate, the back surface protective film forming film, and the protective layer are attached. In the first laminating step of obtaining a second laminated film in which and are laminated in this order,
A curing step of curing the back surface protective film forming film of the second laminate to obtain a back surface protective film,
A method for producing a first laminated body, which comprises a transporting step of transporting the second laminated body from the first laminating step to the curing step. - 半導体基板と、裏面保護膜形成用フィルムと、保護層と、支持シートとがこの順に積層された第三積層体の製造方法であって、
前記半導体基板の裏面に、請求項2に記載の裏面保護膜形成用複合体の前記裏面保護膜形成用フィルムを貼付して、前記半導体基板と、前記裏面保護膜形成用フィルムと、前記保護層とがこの順に積層された第二積層体を得る第一の積層工程と、
前記第二積層体の前記保護層に、支持シートを貼付して、前記半導体基板と、前記裏面保護膜形成用フィルムと、前記保護層と、前記支持シートとがこの順に積層された第三積層体を得る第二の積層工程と、
前記第一の積層工程から前記第二の積層工程に前記第二積層体を搬送する搬送工程とを含む、第三積層体の製造方法。 It is a method for manufacturing a third laminated body in which a semiconductor substrate, a film for forming a back surface protective film, a protective layer, and a support sheet are laminated in this order.
The back surface protective film forming film of the back surface protective film forming composite according to claim 2 is attached to the back surface of the semiconductor substrate, and the semiconductor substrate, the back surface protective film forming film, and the protective layer are attached. In the first laminating step of obtaining a second laminated film in which and are laminated in this order,
A support sheet is attached to the protective layer of the second laminate, and the semiconductor substrate, the back surface protective film forming film, the protective layer, and the support sheet are laminated in this order. The second laminating process to get the body,
A method for producing a third laminated body, which comprises a transporting step of transporting the second laminated body from the first laminating step to the second laminating step. - 請求項3に記載の製造方法で製造された第一積層体の前記保護層に、支持シートを貼付し、前記半導体基板と、前記裏面保護膜と、前記保護層と、前記支持シートとがこの順に積層された第四積層体を得る第二の積層工程と、
前記第四積層体の、前記半導体基板及び前記裏面保護膜をダイシングして、裏面保護膜付き半導体装置とする工程と、
前記裏面保護膜付き半導体装置を、前記支持シートからピックアップする工程とを含む、裏面保護膜付き半導体装置の製造方法。 A support sheet is attached to the protective layer of the first laminate manufactured by the manufacturing method according to claim 3, and the semiconductor substrate, the back surface protective film, the protective layer, and the support sheet are attached to the protective layer. The second laminating step of obtaining the fourth laminated body which was laminated in order, and
A step of dying the semiconductor substrate and the back surface protective film of the fourth laminated body to obtain a semiconductor device with a back surface protective film.
A method for manufacturing a semiconductor device with a back surface protective film, which comprises a step of picking up the semiconductor device with a back surface protective film from the support sheet. - 請求項4に記載の製造方法で製造された第三積層体の、前記裏面保護膜形成用フィルムを硬化させて裏面保護膜とし、前記半導体基板と、前記裏面保護膜と、前記保護層と、前記支持シートとがこの順に積層された第四積層体を得る硬化工程と、
前記第四積層体の、前記半導体基板及び前記裏面保護膜をダイシングして、裏面保護膜付き半導体装置とする工程と、
前記裏面保護膜付き半導体装置を、前記支持シートからピックアップする工程とを含む、裏面保護膜付き半導体装置の製造方法。 The film for forming the back surface protective film of the third laminate produced by the production method according to claim 4 is cured to form a back surface protective film, and the semiconductor substrate, the back surface protective film, the protective layer, and the like. A curing step of obtaining a fourth laminated body in which the support sheets are laminated in this order, and
A step of dicing the semiconductor substrate and the back surface protective film of the fourth laminated body to obtain a semiconductor device with a back surface protective film.
A method for manufacturing a semiconductor device with a back surface protective film, which comprises a step of picking up the semiconductor device with a back surface protective film from the support sheet. - 請求項4に記載の製造方法で製造された第三積層体の、前記半導体基板及び前記裏面保護膜形成用フィルムをダイシングして、裏面保護膜形成用フィルム付き半導体装置とする工程と、
前記裏面保護膜形成用フィルムを硬化させて裏面保護膜とする硬化工程と、
前記裏面保護膜形成用フィルム付き半導体又は裏面保護膜付き半導体装置を、前記支持シートからピックアップする工程とを含む、裏面保護膜付き半導体装置の製造方法。 A step of dicing the semiconductor substrate and the back surface protective film forming film of the third laminate manufactured by the production method according to claim 4 to obtain a semiconductor device with a back surface protective film forming film.
A curing step of curing the back surface protective film forming film to obtain a back surface protective film,
A method for manufacturing a semiconductor device with a back surface protective film, which comprises a step of picking up the semiconductor with a back surface protective film or a semiconductor device with a back surface protective film from the support sheet.
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KR1020227028240A KR20220142447A (en) | 2020-02-21 | 2021-02-18 | A composite for forming a back protective film, a manufacturing method of a first laminate, a manufacturing method of a third laminate, and a manufacturing method of a semiconductor device with a back protective film |
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JP2009130233A (en) * | 2007-11-27 | 2009-06-11 | Furukawa Electric Co Ltd:The | Film for chip protection |
JP2014192462A (en) * | 2013-03-28 | 2014-10-06 | Lintec Corp | Resin film formation sheet |
JP2015032644A (en) * | 2013-07-31 | 2015-02-16 | リンテック株式会社 | Protection film forming film, sheet for protection film formation, and inspection method therefor |
WO2017047183A1 (en) * | 2015-09-16 | 2017-03-23 | 古河電気工業株式会社 | Film for back surface of semiconductor |
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JP4271597B2 (en) | 2004-02-27 | 2009-06-03 | リンテック株式会社 | Chip protection film forming sheet |
US9786541B2 (en) | 2011-09-30 | 2017-10-10 | Lintec Corporation | Dicing sheet with protective film forming layer and chip fabrication method |
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JP2009130233A (en) * | 2007-11-27 | 2009-06-11 | Furukawa Electric Co Ltd:The | Film for chip protection |
JP2014192462A (en) * | 2013-03-28 | 2014-10-06 | Lintec Corp | Resin film formation sheet |
JP2015032644A (en) * | 2013-07-31 | 2015-02-16 | リンテック株式会社 | Protection film forming film, sheet for protection film formation, and inspection method therefor |
WO2017047183A1 (en) * | 2015-09-16 | 2017-03-23 | 古河電気工業株式会社 | Film for back surface of semiconductor |
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