JP2018107313A - Gas supply device, plasma processing device, and manufacturing method of gas supply device - Google Patents

Gas supply device, plasma processing device, and manufacturing method of gas supply device Download PDF

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JP2018107313A
JP2018107313A JP2016253152A JP2016253152A JP2018107313A JP 2018107313 A JP2018107313 A JP 2018107313A JP 2016253152 A JP2016253152 A JP 2016253152A JP 2016253152 A JP2016253152 A JP 2016253152A JP 2018107313 A JP2018107313 A JP 2018107313A
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discharge port
gas discharge
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JP6984126B2 (en
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芳彦 佐々木
Yoshihiko Sasaki
芳彦 佐々木
雅人 南
Masahito Minami
雅人 南
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/67005—Apparatus not specifically provided for elsewhere
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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Abstract

PROBLEM TO BE SOLVED: To provide a technique for achieving uniformity of the film thickness of a sprayed film to be formed on a gas discharge port in a gas supply device for plasma processing having an electrode member provided with a plurality of gas discharge ports.SOLUTION: A gas supply device having an electrode plate 32B used for plasma processing and having a plurality of gas flow paths 41 formed therein bends a corner portion outward so as to form the corner portion at a boundary portion Pa between a gas flow passage 41 and a gas discharge port 40 and forms a curved surface extending from the inner peripheral surface located on the outer side of the corner portion to a lower surface 300. Therefore, a spraying direction of a thermal spray material 50 when the thermal spray material 50 is blown onto the gas discharge port 40 and the inner peripheral surface of the gas discharge port 40 are increased, and thinning near the boundary on the upstream side of the gas discharge port 40 can be prevented.SELECTED DRAWING: Figure 6

Description

本発明は、基板をプラズマ処理するときに用いられる電極部材を備えたガス供給装置の技術分野に関する   The present invention relates to a technical field of a gas supply device provided with an electrode member used when plasma processing a substrate.

半導体製造装置として、プラズマにより基板に対して成膜処理やエッチングなどを行うプラズマ処理装置があり、例えば上部電極を兼用するガスシャワーヘッドなどと呼ばれているガス供給部と、下部電極を兼用する基板の載置台との間に高周波電力を印加する平行平板型のプラズマ処理装置が知られている。
このようなプラズマ処理装置において、ガス供給部に用いられる上部電極には、複数のガス流路が形成され、ガス流路の下端部には、孔部が拡開するガス吐出口（ガス孔口元）が形成されている。このような上部電極においては、上部電極の表面に形成されたアルマイトがプラズマにより消耗することによるパーティクルの発生や、異常放電が問題となる。そのためガス吐出口の耐プラズマ性の向上の要請がある。 As a semiconductor manufacturing apparatus, there is a plasma processing apparatus for performing film formation processing or etching on a substrate by plasma. For example, a gas supply unit called a gas shower head that also serves as an upper electrode and a lower electrode are used. 2. Description of the Related Art A parallel plate type plasma processing apparatus that applies high-frequency power to a substrate mounting table is known.
In such a plasma processing apparatus, a plurality of gas flow paths are formed in the upper electrode used in the gas supply section, and a gas discharge port (a gas hole opening base) in which a hole is expanded at the lower end of the gas flow path. ) Is formed. In such an upper electrode, generation of particles or abnormal discharge due to the consumption of alumite formed on the surface of the upper electrode by plasma becomes a problem. Therefore, there is a demand for improving the plasma resistance of the gas discharge port.

上部電極の耐プラズマ性を向上させるために、例えば特許文献１、２に記載されているようにガス吐出口のアルマイト処理がされた表面に、セラミックス溶射を行い、保護膜を形成する技術が知られている。このようなガス吐出口の開口部付近に溶射膜を成膜するにあたって、例えば上部電極の一面（載置台と対向する面）に垂直な方向から溶射ガンにより溶射材料を吹き付け、溶射ガンを前記一面に沿って平行移動させて、各ガス吐出口に溶射膜を成膜している。   In order to improve the plasma resistance of the upper electrode, for example, as disclosed in Patent Documents 1 and 2, a technique for forming a protective film by performing ceramic spraying on the surface of the gas discharge port that has been anodized is known. It has been. In forming a thermal spray film near the opening of such a gas discharge port, for example, a thermal spray material is sprayed by a thermal spray gun from a direction perpendicular to one surface of the upper electrode (a surface facing the mounting table), and the thermal spray gun is applied to the one surface. The thermal spray film is formed on each gas discharge port by parallel movement.

しかしながら前記一面に垂直な方向から溶射ガンにより溶射材料を吹き付けたときに、ガス吐出口の内周面における上流側の部分は、内周面と溶射材料の吹き付け方向との角度が小さくなり、溶射材料が吹き付けにくい。そのためガス吐出口の上流寄りの部位において溶射膜が薄くなる傾向がある。溶射膜が局部的に薄くなると、薄くなった部位において溶射膜が削れて下層が露出しやすくなり、上部電極の使用寿命が短くなる問題がある。また溶射ガンの角度を調整して溶射材料の吹付角度を調整しながら溶射を行おうとすると、溶射工程が繁雑になる問題がある。   However, when spraying material is sprayed from a direction perpendicular to the one surface with a spray gun, the upstream portion of the inner peripheral surface of the gas discharge port has a smaller angle between the inner peripheral surface and the spraying direction of the spray material. The material is difficult to spray. For this reason, the sprayed coating tends to be thin at the upstream portion of the gas discharge port. When the sprayed film is locally thinned, there is a problem that the sprayed film is shaved in the thinned part and the lower layer is easily exposed, and the service life of the upper electrode is shortened. Further, if the spraying is performed while adjusting the spraying angle of the spraying material by adjusting the angle of the spraying gun, there is a problem that the spraying process becomes complicated.

特許第５７８２２９３号公報Japanese Patent No. 5882293 特許第５１９８６１１号公報Japanese Patent No. 5198611

本発明はこのような事情の下になされたものであり、その目的は、複数のガス吐出口が形成された電極部材を備えたプラズマ処理用のガス供給装置において、ガス吐出口に成膜する溶射膜の膜厚の均一化を図る技術を提供することにある。   The present invention has been made under such circumstances, and an object of the present invention is to form a film on a gas discharge port in a plasma processing gas supply apparatus including an electrode member on which a plurality of gas discharge ports are formed. The object is to provide a technique for making the film thickness of the sprayed film uniform.

本発明のガス供給装置は、プラズマを発生させるための電極部材と、
前記電極部材に当該電極部材の一面に向かって伸びるように形成された複数のガス流路と、
前記ガス流路の下流端に連続して形成され、孔径が前記一面に向かって拡大するガス吐出口と、
前記ガス吐出口の表面に溶射膜により形成された保護膜と、を備え、
前記ガス流路と前記ガス吐出口との境界にて内周面を外側に向けて折曲して角部を形成すると共に、前記角部よりも外側に位置する内周面の部位から前記電極部材の一面側の表面までを湾曲面として形成し、前記ガス流路の軸線に沿った断面で見たときに、前記角部から前記湾曲面の内端までの間は直線であることを特徴とする。 The gas supply device of the present invention includes an electrode member for generating plasma,
A plurality of gas flow paths formed on the electrode member so as to extend toward one surface of the electrode member;
A gas discharge port formed continuously at the downstream end of the gas flow path and having a hole diameter expanding toward the one surface;
A protective film formed of a sprayed film on the surface of the gas discharge port,
The inner peripheral surface is bent outward at the boundary between the gas flow path and the gas discharge port to form a corner portion, and the electrode is formed from a portion of the inner peripheral surface located outside the corner portion. A surface up to one surface side of the member is formed as a curved surface, and when viewed in a section along the axis of the gas flow path, a straight line extends from the corner to the inner end of the curved surface. And

また本発明のガス供給装置は、プラズマを発生させるための電極部材と、
前記電極部材に当該電極部材の一面に向かって伸びるように形成された複数のガス流路と、
前記ガス流路の下流端に連続して形成され、孔径が前記一面に向かって拡大するガス吐出口と、
前記ガス吐出口の表面に溶射膜により形成された保護膜と、を備え、
前記ガス流路と前記ガス吐出口との境界にて内周面を外側に向けて折曲して角部を形成すると共に、前記ガス流路の軸線に沿った断面で見たときに、前記角部から、前記ガス吐出口の外端に至るまでの内周面は直線であり、当該直線と前記ガス流路の軸線とがなす角度θ２は、４５度から７０度の範囲に設定されていることを特徴とする。 The gas supply device of the present invention includes an electrode member for generating plasma,
A plurality of gas flow paths formed on the electrode member so as to extend toward one surface of the electrode member;
A gas discharge port formed continuously at the downstream end of the gas flow path and having a hole diameter expanding toward the one surface;
A protective film formed of a sprayed film on the surface of the gas discharge port,
When the inner circumferential surface is bent outward at the boundary between the gas flow path and the gas discharge port to form a corner, and when viewed in a cross section along the axis of the gas flow path, The inner peripheral surface from the corner to the outer end of the gas discharge port is a straight line, and the angle θ2 formed by the straight line and the axis of the gas flow path is set in a range of 45 degrees to 70 degrees. It is characterized by being.

本発明のガス供給部の製造方法は、上述のガス供給装置の製造方法であって、前記電極部材における前記ガス吐出口が形成された面に向けて溶射材料を吹き付ける溶射部を、前記ガス流路の伸びる方向に対して直交する方向に移動させて溶射膜を成膜することを特徴とする。   The method for manufacturing a gas supply unit according to the present invention is the above-described method for manufacturing a gas supply device, wherein the thermal spraying part that sprays a thermal spray material toward the surface of the electrode member on which the gas discharge port is formed, The thermal spray film is formed by moving in a direction orthogonal to the direction in which the road extends.

本発明のプラズマ処理装置は、内部にプラズマを発生させるための処理容器と、
前記処理容器内に設けられた基板を載置する載置台と、
前記処理容器内にプラズマ処理用の処理ガスを供給する上述のガス供給装置と、
前記載置台と電極部材との間に高周波電力を供給する高周波電源部と、
処理容器内を真空排気をするための排気機構と、を備えたことを特徴とする。 The plasma processing apparatus of the present invention includes a processing container for generating plasma inside,
A mounting table for mounting a substrate provided in the processing container;
The gas supply apparatus described above for supplying a processing gas for plasma processing into the processing vessel;
A high-frequency power supply for supplying high-frequency power between the mounting table and the electrode member;
And an exhaust mechanism for evacuating the inside of the processing container.

本発明は、プラズマ処理に用いられ複数のガス流路が形成された電極部材を有するガス供給装置において、ガス流路とガス吐出口との境界にて角部を形成するように外側に屈曲させ、角部の外側に位置する内周面から電極部材の一面側までを湾曲面として形成している。そのためガス吐出口に溶射材料を吹き付けたときに溶射材料の吹き付け方向とガス吐出口の内周面と、がなす角度が大きくなり、ガス吐出口の上流側の境界付近における薄膜化を防ぐことができる。
また他の発明では、ガス流路とガス吐出口との境界に内周面を第１の角部を形成するように外側に折曲させ、第１の角部の外側の内周面を更に外側に折曲して、第２の角部を形成して電極部材の一面側に連続させている。さらに第１の角部から第２の角部までの内壁に沿った直線とガス流路の軸線とのなす角度θ２を４５°以上、７０°以下となるようにしている。そのため溶射材料の吹き付け方向と、ガス吐出口の内周面と、がなす角度が大きくなるため同様にガス吐出口の溶射膜が均一な膜厚に形成されやすくなる。 The present invention relates to a gas supply apparatus having an electrode member used for plasma processing and having a plurality of gas flow paths, and is bent outward so as to form a corner at the boundary between the gas flow path and the gas discharge port. A curved surface is formed from the inner peripheral surface located outside the corner portion to one surface side of the electrode member. Therefore, when spraying material is sprayed on the gas discharge port, the angle formed by the spraying direction of the sprayed material and the inner peripheral surface of the gas discharge port becomes large, and it is possible to prevent thinning near the upstream boundary of the gas discharge port. it can.
In another aspect of the invention, the inner peripheral surface is bent outward so as to form a first corner at the boundary between the gas flow path and the gas discharge port, and the inner peripheral surface outside the first corner is further formed. It bend | folds outside and forms the 2nd corner | angular part and it is made to continue on the one surface side of the electrode member. Furthermore, the angle θ2 formed by the straight line along the inner wall from the first corner to the second corner and the axis of the gas flow path is set to 45 ° or more and 70 ° or less. Therefore, since the angle formed by the spraying direction of the thermal spray material and the inner peripheral surface of the gas discharge port becomes large, the sprayed film of the gas discharge port is easily formed in a uniform film thickness.

本発明のガス供給装置を適用したプラズマ処理装置の断面図である。It is sectional drawing of the plasma processing apparatus to which the gas supply apparatus of this invention is applied. シャワーヘッドの製造工程を説明する説明図である。It is explanatory drawing explaining the manufacturing process of a shower head. シャワーヘッドの溶射膜成膜工程を説明する説明図である。It is explanatory drawing explaining the sprayed-film formation process of a shower head. シャワーヘッドの溶射膜成膜工程を説明する説明図である。It is explanatory drawing explaining the sprayed-film formation process of a shower head. 従来のシャワーヘッドの溶射膜成膜工程を説明する説明図である。It is explanatory drawing explaining the sprayed-film formation process of the conventional shower head. ガス吐出口を示す断面図である。It is sectional drawing which shows a gas discharge port. プラズマ処理時におけるガス吐出口を示す説明図である。It is explanatory drawing which shows the gas discharge port at the time of a plasma processing. 第２の実施の形態に係るガス供給部のガス吐出口を示す断面図である。It is sectional drawing which shows the gas discharge port of the gas supply part which concerns on 2nd Embodiment. 比較例に係るシャワーヘッドのガス吐出口を示す断面図である。It is sectional drawing which shows the gas discharge port of the shower head which concerns on a comparative example. 実施例における膜厚の測定地点を説明する説明図である。It is explanatory drawing explaining the measurement point of the film thickness in an Example.

［第１の実施の形態］
第１の実施の形態に係るガス供給装置を用いたプラズマ処理装置について説明する。図１に示すようにプラズマ処理装置は、接地された例えばアルミニウムまたはステンレス製の真空容器である処理容器１０を備えている。処理容器１０の側面には、プラズマ処理される基板である例えば矩形のガラス基板Ｇを受け渡すための搬入出口１１が設けられており、搬入出口１１には、搬入出口１１を開閉するゲートバルブ１２が設けられている。 [First Embodiment]
A plasma processing apparatus using the gas supply apparatus according to the first embodiment will be described. As shown in FIG. 1, the plasma processing apparatus includes a processing container 10 that is a grounded vacuum container made of, for example, aluminum or stainless steel. A loading / unloading port 11 for delivering, for example, a rectangular glass substrate G, which is a substrate to be plasma-treated, is provided on the side surface of the processing vessel 10. A gate valve 12 that opens and closes the loading / unloading port 11 is provided at the loading / unloading port 11. Is provided.

処理容器１０の底面における中央部には、ガラス基板Ｇを載置する、平面形状が矩形であって、上面から下面に至るまでの側周面が平坦な角柱状のサセプタ２が設けられている。サセプタ２は、例えば表面にアルマイト処理がされたアルミニウムやステンレスからなる下部電極２１を備え、下部電極２１は、絶縁部材２２を介して処理容器１０の底部に支持されている。下部電極２１の上面は、セラミックス溶射で覆われた基板載置面２１Ａとなっている。また基板載置面２１Ａの周囲を囲むようにリング状のシールド部材２８が設けられ、下部電極２１の側面には、全周に亘ってサイドリング状のシールド部材２９が設けられている。   At the center of the bottom surface of the processing vessel 10 is provided a prismatic susceptor 2 on which the glass substrate G is placed, the planar shape is rectangular, and the side peripheral surface from the upper surface to the lower surface is flat. . The susceptor 2 includes a lower electrode 21 made of, for example, aluminum or stainless steel whose surface is anodized, and the lower electrode 21 is supported on the bottom of the processing container 10 via an insulating member 22. The upper surface of the lower electrode 21 is a substrate mounting surface 21A covered with ceramic spraying. Further, a ring-shaped shield member 28 is provided so as to surround the substrate mounting surface 21A, and a side ring-shaped shield member 29 is provided on the side surface of the lower electrode 21 over the entire circumference.

下部電極２１の基板載置面２１Ａには、直流電源２７に接続されるチャック用の静電電極板２３が埋設されている。静電電極板２３に正の直流電圧が印加されると、基板載置面２１Ａに載置されたガラス基板Ｇの表面に負電荷が吸着する。この静電電極板２３及びガラス基板Ｇの間に電位差が生じ、この電位差に起因するクーロン力によりガラス基板Ｇが基板載置面２１Ａに吸着保持される。下部電極２１の内部には、図示しない環状のチラー流路が設けられ、チラー流路には、所定温度の熱伝導媒体、例えばガルデン（登録商標）が循環供給され、熱伝導媒体の温度によって基板載置面２１Ａに載置されたガラス基板Ｇの処理温度を制御できる。   A chuck electrostatic electrode plate 23 connected to a DC power supply 27 is embedded in the substrate mounting surface 21 </ b> A of the lower electrode 21. When a positive DC voltage is applied to the electrostatic electrode plate 23, negative charges are adsorbed on the surface of the glass substrate G placed on the substrate placement surface 21A. A potential difference is generated between the electrostatic electrode plate 23 and the glass substrate G, and the glass substrate G is attracted and held on the substrate mounting surface 21A by Coulomb force resulting from the potential difference. An annular chiller flow path (not shown) is provided inside the lower electrode 21, and a heat conduction medium having a predetermined temperature, for example, Galden (registered trademark), is circulated and supplied to the chiller flow path. The processing temperature of the glass substrate G placed on the placement surface 21A can be controlled.

またサセプタ２には、外部の搬送アームとの間でガラス基板Ｇを受け渡すための昇降ピン２４が、下部電極２１、絶縁部材２２及び処理容器１０の底面を垂直方向に貫通し、下部電極２１の表面から突没するように設けられている。
また基板載置面２１Ａの表面には、図示しない複数の伝熱ガス吐出孔が開口しており、伝熱ガス吐出孔から基板載置面２１Ａとガラス基板Ｇとの間に伝熱ガス例えばヘリウム（Ｈｅ）ガスを供給するように構成されている。このＨｅガスによりガラス基板Ｇと、サセプタ２との間の熱が効果的に伝達される。 Also, the susceptor 2 is provided with lifting pins 24 for transferring the glass substrate G to and from an external transfer arm, and penetrates the lower electrode 21, the insulating member 22, and the bottom surface of the processing container 10 in the vertical direction. It is provided so that it may protrude from the surface.
A plurality of heat transfer gas discharge holes (not shown) are opened on the surface of the substrate placement surface 21A, and a heat transfer gas such as helium is provided between the substrate placement surface 21A and the glass substrate G through the heat transfer gas discharge holes. (He) is configured to supply gas. The heat between the glass substrate G and the susceptor 2 is effectively transferred by the He gas.

下部電極２１には、処理容器１０内にプラズマ生成用の電界を形成するための高周波電源部２５が整合器２６を介して接続されている。この高周波電源部２５は例えば比較的高い周波数例えば１３．５６ＭＨｚの高周波を出力できるように構成されている。また処理容器１０の底面には、その縁部に全周に亘って、等間隔に複数の排気口１３が開口しており、各排気口１３は、排気管１４を介して真空排気部１５に接続されている。排気口１３、排気管１４及び真空排気部１５は排気機構に相当する。   A high frequency power supply unit 25 for forming an electric field for generating plasma in the processing container 10 is connected to the lower electrode 21 via a matching unit 26. The high frequency power supply unit 25 is configured to output a relatively high frequency, for example, a high frequency of 13.56 MHz. Further, a plurality of exhaust ports 13 are opened at equal intervals over the entire periphery of the bottom surface of the processing vessel 10, and each exhaust port 13 is connected to the vacuum exhaust unit 15 via the exhaust pipe 14. It is connected. The exhaust port 13, the exhaust pipe 14, and the vacuum exhaust unit 15 correspond to an exhaust mechanism.

処理容器１０の上面にはガラス基板Ｇに向けて例えばＣＦ４などのプラズマ処理用のガスを供給するためのガス供給装置であるガス供給部３０がサセプタ２の上面と対向するように設けられている。ガス供給部３０は、一般には「シャワーヘッド」と呼ばれており、以下シャワーヘッド３０として説明を進めると、シャワーヘッド３０は、例えばアルミニウムを母材とする下面に扁平な凹部が形成された上部材３２Ａと上部材３２Ａの下面を塞ぐ電極部材である電極板３２Ｂとを備えている。上部材３２Ａと電極板３２Ｂとの間の隙間は、処理ガスを拡散するための拡散空間３１を形成している。電極板３２Ｂには、電極板３２Ｂを厚さ方向に貫通し、各々拡散空間３１に連通された複数のガス流路４１が形成される。またシャワーヘッド３０の上面には、拡散空間３１に接続される処理ガス供給管３３が設けられ、処理ガス供給管３３には、上流側から例えばＣＦ４などの処理ガス供給源３４、流量調整部３５、及びバルブ３６がこの順に設けられ、シャワーヘッド３０に処理ガスを供給するように構成されている。 A gas supply unit 30, which is a gas supply device for supplying a plasma processing gas such as CF 4 toward the glass substrate G, is provided on the upper surface of the processing container 10 so as to face the upper surface of the susceptor 2. Yes. The gas supply unit 30 is generally referred to as a “shower head”, and will be described below as the shower head 30. The shower head 30 has a flat concave portion formed on a lower surface made of, for example, aluminum. A member 32A and an electrode plate 32B that is an electrode member that covers the lower surface of the upper member 32A are provided. A gap between the upper member 32A and the electrode plate 32B forms a diffusion space 31 for diffusing the processing gas. The electrode plate 32B is formed with a plurality of gas flow paths 41 that penetrate the electrode plate 32B in the thickness direction and communicate with the diffusion space 31, respectively. Further, a processing gas supply pipe 33 connected to the diffusion space 31 is provided on the upper surface of the shower head 30, and the processing gas supply pipe 33 includes a processing gas supply source 34 such as CF 4 and a flow rate adjusting unit from the upstream side. 35 and a valve 36 are provided in this order, and are configured to supply a processing gas to the shower head 30.

図２に示すようにシャワーヘッド３０の電極板３２Ｂには、拡散空間３１からサセプタ２と対向する一面側（プラズマを励起する処理空間側）にガスを流すガス流路４１が穿設される。ガス流路４１は、拡散空間３１側を上流、処理空間側を下流とすると、上流側が大径の流路４１ａ、下流側が小径の流路４１ｂとして形成され、さらに下流側端部には、プラズマを励起する処理空間側に開口するガス吐出口４０が形成されている。ガス流路４１における大径の流路４１ａの内径は例えば２ｍｍに設定されている。また小径の流路４１ｂは、例えば内径０．５〜１．０ｍｍに構成され、処理空間側で励起されたプラズマがガス流路４１の上流側に入り込むことを防いでいる。   As shown in FIG. 2, the electrode plate 32B of the shower head 30 is provided with a gas flow path 41 through which gas flows from one side of the diffusion space 31 to the surface facing the susceptor 2 (the processing space side for exciting plasma). The gas channel 41 is formed as a large-diameter channel 41a on the upstream side and a small-diameter channel 41b on the downstream side when the diffusion space 31 side is upstream and the processing space side is downstream. A gas discharge port 40 that is open to the processing space side that excites is formed. The inner diameter of the large diameter channel 41a in the gas channel 41 is set to 2 mm, for example. The small-diameter channel 41 b is configured to have an inner diameter of 0.5 to 1.0 mm, for example, and prevents plasma excited on the processing space side from entering the upstream side of the gas channel 41.

ガス吐出口４０は、内周側が全周に亘って面取りされ、上流から下流に向かって孔径が広がっている。各ガス吐出口４０の斜面部分は、ガス流路４１の軸線Ｌを含む断面で見たときに、上流側の端部から下流側に向かってガス流路４１の軸線Ｌに対して角度θ１、ここでは、４５°傾斜した直線部分４２と、直線部分４２下流側端部から外側に向かい、サセプタ２と対向する下面（対向面）３００に連続する曲線部分４３と、で構成されている。この曲線部分４３の曲率半径は、１ｍｍの寸法の曲線となるように構成されている。即ちガス吐出口４０は、ガス吐出口４０とガス流路４１との境界にて内周面に境界部Ｐａの角部が形成されるように外側に向けて折曲し、ガス吐出口４０の境界部Ｐａの角部よりも下流側に寄った位置から電極板３２Ｂの下面３００まで湾曲面として形成されている。なお下面３００は、ガス吐出口４０における湾曲面の終端の境界部Ｐｂよりも外側の平面部を示す。   The gas discharge port 40 is chamfered on the inner circumference side over the entire circumference, and the hole diameter increases from upstream to downstream. The slope portion of each gas discharge port 40 has an angle θ1 with respect to the axis L of the gas channel 41 from the upstream end toward the downstream when viewed in a cross section including the axis L of the gas channel 41, Here, it is configured by a linear portion 42 inclined by 45 ° and a curved portion 43 that continues outward from the downstream end portion of the linear portion 42 and continues to a lower surface (opposing surface) 300 that faces the susceptor 2. The curvature radius of the curved portion 43 is configured to be a curved line having a dimension of 1 mm. That is, the gas discharge port 40 is bent outward so that a corner portion of the boundary portion Pa is formed on the inner peripheral surface at the boundary between the gas discharge port 40 and the gas flow path 41. A curved surface is formed from a position closer to the downstream side than the corner portion of the boundary portion Pa to the lower surface 300 of the electrode plate 32B. Note that the lower surface 300 indicates a flat portion outside the boundary portion Pb at the end of the curved surface in the gas discharge port 40.

上部材３２Ａ及びガス流路４１及びガス吐出口４０の内周面を含む電極板３２Ｂの表面全体は、例えば陽極酸化処理が行われ、シャワーヘッド３０の表面全体が硬質アルマイト３０Ａにより覆われている。そして電極板３２Ｂのガス吐出口４０が開口している一面側にイットリア（Ｙ２Ｏ３）、フッ化イットリウム（ＹＦ３）あるいはアルミナ（Ａｌ２Ｏ３）などの保護膜となる溶射膜を成膜する処理が行われる。溶射装置は、図３に示すように溶射材料５０を吹き付ける例えばプラズマ溶射ガンなどの溶射部５を備えている。溶射膜６を成膜するにあたって、溶射材料５０の吐出方向と、電極板３２Ｂにおける下面３００と、が垂直になるように固定される。 The entire surface of the electrode plate 32B including the inner surfaces of the upper member 32A, the gas flow path 41, and the gas discharge port 40 is subjected to, for example, anodizing treatment, and the entire surface of the shower head 30 is covered with the hard anodized 30A. . A sprayed film serving as a protective film such as yttria (Y 2 O 3 ), yttrium fluoride (YF 3 ), or alumina (Al 2 O 3 ) is formed on one side of the electrode plate 32B where the gas discharge ports 40 are open. A filming process is performed. As shown in FIG. 3, the thermal spraying apparatus includes a thermal spraying unit 5 such as a plasma spray gun that sprays a thermal spray material 50. In forming the sprayed film 6, the discharge direction of the sprayed material 50 and the lower surface 300 of the electrode plate 32B are fixed so as to be vertical.

そして図３に示すように溶射部５から電極板３２Ｂの下面３００へ溶射材料５０を吹き付け、溶射部５をガス流路４１の伸びる方向と直交する方向に平行移動させて、各々のガス吐出口４０に溶射膜６を成膜する。既述のようにガス吐出口４０は、既述の断面で見たときに内壁に沿った直線部分４２と、軸線Ｌと、のなす角度が、例えば４５°に設定されている。さらにガス吐出口４０は、ガス吐出口４０とガス流路４１との境界部Ｐａにて内周面に角部が形成されるように外側に向けて折曲し、ガス吐出口４０の直線部分４２の下流側は、電極板３２Ｂの下面３００まで湾曲面により繋がるように構成されている。   Then, as shown in FIG. 3, the sprayed material 50 is sprayed from the sprayed portion 5 to the lower surface 300 of the electrode plate 32B, and the sprayed portion 5 is translated in a direction perpendicular to the direction in which the gas flow path 41 extends, thereby each gas discharge port. The thermal spray film 6 is formed on 40. As described above, the angle formed between the straight line portion 42 along the inner wall and the axis L when the gas discharge port 40 is viewed in the above-described cross section is set to 45 °, for example. Further, the gas discharge port 40 is bent outward so that a corner is formed on the inner peripheral surface at the boundary portion Pa between the gas discharge port 40 and the gas flow path 41, and the straight portion of the gas discharge port 40 The downstream side of 42 is configured to be connected to the lower surface 300 of the electrode plate 32B by a curved surface.

このようなガス吐出口４０に向けてガス流路４１の軸線Ｌと平行に溶射材料５０吹き付けたときに、図４に示すように溶射材料５０の吹付角度と、ガス吐出口４０の内面との間の角度αは、４５°になる。
これに対して、図５に示すようにガス吐出口４０の側周面を湾曲させ、ガス吐出口４０とガス流路４１との境界部位（ガス吐出口４０の上流側端部）から電極板３２Ｂの下面３００までを湾曲面として形成した場合には、ガス吐出口４０の上流端の近傍において、溶射材料５０の吹付角度と、ガス吐出口４０の内面との間の角度αが４５°よりも小さくなる。 When the thermal spray material 50 is sprayed toward the gas discharge port 40 in parallel with the axis L of the gas flow path 41, the spray angle of the thermal spray material 50 and the inner surface of the gas discharge port 40 are as shown in FIG. The angle α between them is 45 °.
On the other hand, as shown in FIG. 5, the side peripheral surface of the gas discharge port 40 is curved, and an electrode plate is formed from the boundary portion (upstream end portion of the gas discharge port 40) between the gas discharge port 40 and the gas flow path 41. When the bottom surface 300 of 32B is formed as a curved surface, in the vicinity of the upstream end of the gas discharge port 40, the angle α between the spray angle of the thermal spray material 50 and the inner surface of the gas discharge port 40 is more than 45 °. Becomes smaller.

そのため電極板３２Ｂの処理空間側の面に対して図３に示すようにガス流路４１の軸線Ｌと平行に溶射材料５０を吹き付けたときに、後述の実施例に示すように図５に示すガス吐出口４０においては、ガス吐出口４０の上流側の領域において、溶射材料５０がガス吐出口４０の内周面に対して吹き付けられる角度αが小さくなる。そのためガス吐出口４０の上流側において、溶射膜６の膜厚が薄くなる。   Therefore, when the thermal spray material 50 is sprayed on the surface of the electrode plate 32B on the processing space side in parallel with the axis L of the gas flow path 41 as shown in FIG. 3, it is shown in FIG. In the gas discharge port 40, the angle α at which the sprayed material 50 is sprayed on the inner peripheral surface of the gas discharge port 40 becomes small in the upstream region of the gas discharge port 40. Therefore, the film thickness of the sprayed film 6 is reduced on the upstream side of the gas discharge port 40.

これに対して図４に示すガス吐出口４０においては、ガス吐出口４０の内周面に対して、溶射材料５０が４５°の角度で吹き付けられる。そのためガス吐出口４０の上流側端部においても、下面３００に成膜される溶射膜６と同等の膜厚で成膜される。そのため図６に示すようにガス吐出口４０の内面に溶射膜６が均一に形成される。なおガス吐出口４０とガス流路４１との境界部Ｐａの角部からガス吐出口４０と電極板３２Ｂの下面３００との境界部Ｐｂまでの水平距離Ｓ１は１ｍｍ以下に形成されている。
なお境界部Ｐｂと境界部Ｐａとの間の水平距離Ｓ１は、０．５〜１ｍｍに設定することが好ましい。従って下流側端部と電極板３２Ｂの下面３００とを湾曲面で繋ぐ場合において、ガス吐出口４０の内壁と軸線Ｌとがなす角度θ１は４５〜５０°に設定することが好ましい。 On the other hand, in the gas discharge port 40 shown in FIG. 4, the thermal spray material 50 is sprayed at an angle of 45 ° with respect to the inner peripheral surface of the gas discharge port 40. For this reason, the upstream end portion of the gas discharge port 40 is also formed with a film thickness equivalent to that of the sprayed film 6 formed on the lower surface 300. Therefore, the sprayed film 6 is uniformly formed on the inner surface of the gas discharge port 40 as shown in FIG. The horizontal distance S1 from the corner portion of the boundary portion Pa between the gas discharge port 40 and the gas flow path 41 to the boundary portion Pb between the gas discharge port 40 and the lower surface 300 of the electrode plate 32B is formed to be 1 mm or less.
The horizontal distance S1 between the boundary portion Pb and the boundary portion Pa is preferably set to 0.5 to 1 mm. Therefore, when the downstream end and the lower surface 300 of the electrode plate 32B are connected by a curved surface, the angle θ1 formed by the inner wall of the gas discharge port 40 and the axis L is preferably set to 45 to 50 °.

このように溶射膜６が成膜された電極板３２Ｂは、上部材３２Ａに接合された後、既述の処理ガス供給管３３が接続され処理容器１０に設置され、接地電位に接続される。これによりシャワーヘッド３０の電極板３２Ｂは、下部電極２１と共に一対の平行平板電極を構成する。   The electrode plate 32B on which the sprayed film 6 is formed in this manner is joined to the upper member 32A, and then the processing gas supply pipe 33 described above is connected to the processing container 10 and connected to the ground potential. Thereby, the electrode plate 32B of the shower head 30 constitutes a pair of parallel plate electrodes together with the lower electrode 21.

続いてプラズマ処理装置の作用について例えばエッチング処理を例に説明する。プラズマ処理装置が稼働すると、被処理基板であるガラス基板Ｇが、外部の搬送アームと昇降ピン２４との協働作用により、基板載置面２１Ａに載置される。次いでゲートバルブ１２を閉じた後、基板載置面２１Ａとガラス基板Ｇとの間に伝熱ガスを供給すると共に静電電極板２３に直流電圧を印加して、ガラス基板Ｇを吸着保持する。   Next, the operation of the plasma processing apparatus will be described by taking an etching process as an example. When the plasma processing apparatus is operated, the glass substrate G, which is a substrate to be processed, is placed on the substrate placement surface 21 </ b> A by the cooperative action of the external transfer arm and the lifting pins 24. Next, after the gate valve 12 is closed, a heat transfer gas is supplied between the substrate mounting surface 21 </ b> A and the glass substrate G, and a DC voltage is applied to the electrostatic electrode plate 23 to attract and hold the glass substrate G.

次いで処理容器１０内に例えばＣＦ４などのエッチングガスを含む処理ガスをガス供給部３から供給すると共に、排気口１３から真空排気を行い処理容器１０内の圧力を所定の圧力に調整する。その後高周波電源部２５から整合器２６を介してプラズマ生成用の高周波電力を下部電極２１本体に印加し、下部電極２１と、シャワーヘッド３０との間に高周波の電界を発生させる。処理容器１０内に供給されている処理ガスは、下部電極２１と、シャワーヘッド３０との間に発生する高周波の電界により励起され、処理ガスのプラズマが生成される。またプラズマに含まれるイオンが下部電極２１に引き寄せられ、ガラス基板Ｇの被処理膜に対してエッチング処理が行われる。その後エッチング処理が行われたガラス基板Ｇは、外部の搬送アームにより処理容器１０から搬出される。 Next, a processing gas containing an etching gas such as CF 4 is supplied from the gas supply unit 3 into the processing container 10 and evacuated from the exhaust port 13 to adjust the pressure in the processing container 10 to a predetermined pressure. Thereafter, high frequency power for plasma generation is applied to the main body of the lower electrode 21 from the high frequency power supply unit 25 through the matching unit 26, and a high frequency electric field is generated between the lower electrode 21 and the shower head 30. The processing gas supplied into the processing container 10 is excited by a high-frequency electric field generated between the lower electrode 21 and the shower head 30, and processing gas plasma is generated. Further, ions contained in the plasma are attracted to the lower electrode 21, and an etching process is performed on the processing target film of the glass substrate G. Thereafter, the glass substrate G on which the etching process has been performed is carried out of the processing container 10 by an external transfer arm.

このようにプラズマ処理装置において処理容器１０内にプラズマが励起されると、図７に示すようにシャワーヘッド３０の処理空間側の面がプラズマＰに接する。この時ガス吐出口４０においては、ガス吐出口４０の内面にプラズマが接するが、ガス流路４１は下流側の流路４１ｂの内径が狭くなっているためプラズマＰがガス流路４１側へ進入するおそれは小さい。そしてガス吐出口４０は、溶射膜６により覆われているため、溶射膜６の下層側の硬質アルマイト３０Ａの層がプラズマＰから保護される。   When the plasma is thus excited in the processing chamber 10 in the plasma processing apparatus, the surface of the shower head 30 on the processing space side comes into contact with the plasma P as shown in FIG. At this time, in the gas discharge port 40, the plasma contacts the inner surface of the gas discharge port 40, but the plasma P enters the gas flow channel 41 side in the gas flow channel 41 because the inner diameter of the downstream flow channel 41 b is narrow. The risk of doing so is small. Since the gas discharge port 40 is covered with the sprayed film 6, the layer of the hard alumite 30 </ b> A on the lower layer side of the sprayed film 6 is protected from the plasma P.

そしてプラズマ処理を繰り返し行うことにより、溶射膜６は消耗によりその膜厚が徐々に薄くなっていく。この時ガス吐出口４０に成膜されている溶射膜６の膜厚が均一でない場合には、溶射膜６の膜厚が薄い部位において、下層側の硬質アルマイト３０Ａの層や電極板３２Ｂの母材であるアルミニウムが局所的に露出してしまう。電極板３２Ｂの母材であるアルミニウムが露出してしまうと、ガス吐出口４０にて、異常放電が発生したり、アルミニウムを起源とするパーティクルの発生の要因となるため、ガス供給部３の交換やメンテナンスが必要になる。   By repeatedly performing the plasma treatment, the sprayed film 6 gradually decreases in thickness due to wear. At this time, if the film thickness of the sprayed film 6 formed on the gas discharge port 40 is not uniform, the layer of the hard anodized layer 30A on the lower layer side and the mother of the electrode plate 32B in the part where the film thickness of the sprayed film 6 is thin. Aluminum as a material is locally exposed. If the aluminum that is the base material of the electrode plate 32B is exposed, abnormal discharge occurs at the gas discharge port 40 or causes generation of particles originating from aluminum. And maintenance is required.

既述のようにシャワーヘッド３０は、ガス吐出口４０に成膜されている溶射膜６の膜厚の均一性が高いため、プラズマ処理を繰り返したときに溶射膜６の薄化による下層側のアルミニウムの局所的な露出が抑えられるため、シャワーヘッド３０の使用寿命が長くなり、交換やメンテナンスの周期を長くすることができる。   As described above, the shower head 30 has a high uniformity of the film thickness of the sprayed film 6 formed at the gas discharge port 40. Therefore, when the plasma treatment is repeated, the shower head 30 is formed on the lower layer side by thinning of the sprayed film 6. Since local exposure of aluminum is suppressed, the service life of the shower head 30 is extended, and the replacement and maintenance cycle can be extended.

第１の実施の形態によれば、プラズマ処理に用いられ、複数のガス流路４１が形成された電極板３２Ｂを有するガス供給装置において、ガス流路４１とガス吐出口４０との境界部Ｐａにて角部を形成するように外側に屈曲させ、角部の外側に位置する内周面から下面３００までを湾曲面として形成している。そのためガス吐出口４０に溶射材料５０を吹き付けたときに溶射材料５０を吹き付け方向と、ガス吐出口４０の内周面と、のなす角度が大きくなり、ガス吐出口５０の上流側の境界付近における薄膜化を防ぐことができる。
これによりガス供給部３に溶射膜６を成膜するにあたって、ガス流路４１の伸びる方向から溶射材料５０を吹き付けることでガス吐出口４０に溶射膜６を均一に成膜することができ、溶射材料５０を吹き付ける溶射部５をガス流路４１の伸びる方向と直交する方向に移動させて、溶射材料５０を吹き付ける位置を変えることで、各ガス吐出口４０に均一な溶射膜６を成膜することができる。
従って溶射膜成膜処理が簡単になり、例えば溶射部５の溶射材料５０の吹付角度を調整して、溶射膜６の薄い部分に改めて溶射材料５０を吹き付けるなどの複雑な工程を行う必要がない。
更に基板に成膜処理を行うプラズマ処理装置に適用してもよく、ガラス基板Ｇをプラズマ処理するプラズマ処理装置に限らず、円板状の例えば直径３００ｍｍウエハをプラズマ処理するプラズマ処理装置であってもよい。 According to the first embodiment, in a gas supply apparatus that is used for plasma processing and has an electrode plate 32B in which a plurality of gas flow paths 41 are formed, a boundary portion Pa between the gas flow path 41 and the gas discharge port 40 is used. Are bent outward so as to form a corner, and a curved surface is formed from the inner peripheral surface located on the outer side of the corner to the lower surface 300. Therefore, when spraying material 50 is sprayed to gas discharge port 40, the angle formed by the spraying direction of spraying material 50 and the inner peripheral surface of gas discharge port 40 becomes large, and in the vicinity of the upstream boundary of gas discharge port 50. Thinning can be prevented.
Thus, when the sprayed film 6 is formed on the gas supply unit 3, the sprayed material 50 can be sprayed from the direction in which the gas flow path 41 extends to uniformly form the sprayed film 6 on the gas discharge port 40. The sprayed part 5 for spraying the material 50 is moved in a direction orthogonal to the direction in which the gas flow path 41 extends to change the position for spraying the sprayed material 50, thereby forming a uniform sprayed film 6 on each gas discharge port 40. be able to.
Therefore, the thermal spray film forming process is simplified, and it is not necessary to perform a complicated process such as, for example, adjusting the spray angle of the thermal spray material 50 in the thermal spray portion 5 and spraying the thermal spray material 50 again on a thin portion of the thermal spray film 6. .
Furthermore, the present invention may be applied to a plasma processing apparatus that performs film formation processing on a substrate, and is not limited to a plasma processing apparatus that performs plasma processing on a glass substrate G, and is a plasma processing apparatus that performs plasma processing on a disk-shaped wafer having a diameter of, for example, 300 mm. Also good.

［第２の実施の形態］
また第２の実施の形態に係るガス供給装置として、図８に示すように各ガス吐出口４０は、軸線Ｌを含む断面で見たときに上流側端部から下流側端部まで直線部分４２のみとなる斜面で構成され、ガス吐出口４０の上流側端部とガス流路４１との間の境界部Ｐａ及びガス吐出口４０の下流側端部と電極板３２Ｂの下面３００との境界部Ｐｂとが夫々第１の角部及び第２の角部となるように構成されていてもよい。後述の実施例に示すように各ガス吐出口４０の内面の角度θ２が軸線Ｌに対して４５°以上であれば溶射部５から溶射材料５０を吹きつけたときにガス吐出口４０の溶射膜６に均一に成膜されるため同様の効果がある。 [Second Embodiment]
Further, as shown in FIG. 8, as the gas supply device according to the second embodiment, each gas discharge port 40 has a straight portion 42 from the upstream end to the downstream end when viewed in a cross section including the axis L. The boundary portion Pa between the upstream end portion of the gas discharge port 40 and the gas flow path 41, and the boundary portion between the downstream end portion of the gas discharge port 40 and the lower surface 300 of the electrode plate 32B. Pb may be configured to be a first corner and a second corner, respectively. As shown in the examples described later, when the angle θ2 of the inner surface of each gas discharge port 40 is 45 ° or more with respect to the axis L, the sprayed film of the gas discharge port 40 when the sprayed material 50 is sprayed from the sprayed portion 5. 6 has a similar effect because the film is uniformly formed.

また図８に示すようにガス吐出口４０において、各ガス吐出口４０の内面と軸線Ｌとのなす角度θ２が大きくなると、ガス吐出口４０の下流側端部の内径を大きくするか、ガス吐出口４０の上流側端部から下流側端部までの高さ寸法を低くする必要がある。ガス吐出口４０の下流側端部の内径が大きくなると、ガス供給部３の処理空間側の面に設けられるガス吐出口４０の配列レイアウトや配列数の自由度が制限される。またガス吐出口４０の上流側端部から下流側端部までの高さ寸法が低い場合には、吐出されるガスの流速が速くなり、ガス流路４１が詰まりやすくなる。そのため各ガス吐出口４０の内壁と軸線Ｌとのなす角度θ２は、７０°以下であることが好ましく、ガス吐出口４０の下流側の境界部Ｐｂと、上流側の境界部Ｐａとの間の水平距離Ｓ２は、１〜３ｍｍであることが好ましい。   As shown in FIG. 8, in the gas discharge port 40, when the angle θ2 formed between the inner surface of each gas discharge port 40 and the axis L is increased, the inner diameter of the downstream end of the gas discharge port 40 is increased or the gas discharge port 40 is increased. It is necessary to reduce the height dimension of the outlet 40 from the upstream end to the downstream end. When the inner diameter of the downstream end portion of the gas discharge port 40 is increased, the degree of freedom in the arrangement layout and the number of arrangements of the gas discharge ports 40 provided on the processing space side surface of the gas supply unit 3 is limited. Further, when the height dimension from the upstream end portion to the downstream end portion of the gas discharge port 40 is low, the flow rate of the discharged gas is increased and the gas flow path 41 is easily clogged. Therefore, the angle θ2 formed between the inner wall of each gas discharge port 40 and the axis L is preferably 70 ° or less, and between the downstream boundary portion Pb of the gas discharge port 40 and the upstream boundary portion Pa. The horizontal distance S2 is preferably 1 to 3 mm.

また後述の実施例に示すようにガス吐出口４０の下流側端部と電極板３２Ｂの下面３００との境界部Ｐｂを角部とした場合でも溶射膜６の膜厚は高い均一性を示すが、下流側端部と電極板３２Ｂの処理空間側の面とを湾曲面で繋ぐことでガス吐出口４０下流側端部においても溶射膜６の膜厚をより均一にすることができる。
また角部になると、局所的に電界が集中するために異常放電が発生したり、異常放電の影響で角部が削れてパーティクルの要因になるため、ガス吐出口４０の下流側端部を湾曲させることにより異常放電やパーティクルの発生を抑制することができる。 In addition, as shown in the examples described later, the sprayed film 6 has high uniformity even when the boundary part Pb between the downstream end of the gas discharge port 40 and the lower surface 300 of the electrode plate 32B is a corner. The film thickness of the sprayed film 6 can be made more uniform at the downstream end portion of the gas discharge port 40 by connecting the downstream end portion and the surface of the electrode plate 32B on the processing space side with a curved surface.
Also, at the corner, abnormal electric discharge occurs due to local concentration of electric field, or the corner is scraped due to the influence of abnormal electric discharge and causes particles, so the downstream end of the gas discharge port 40 is curved. Thus, abnormal discharge and generation of particles can be suppressed.

本発明の実施の形態の効果を検証するために以下の実施例１〜３及び比較例に係るガス供給部３に実施の形態に示す方法により、溶射膜６を成膜したときのガス吐出口４０における溶射膜６の膜厚分布について調べた。   In order to verify the effect of the embodiment of the present invention, the gas discharge port when the sprayed film 6 is formed on the gas supply unit 3 according to the following Examples 1 to 3 and Comparative Example by the method shown in the embodiment The film thickness distribution of the sprayed film 6 at 40 was examined.

［実施例１］
図２に示すようにガス吐出口４０を下流側ほど内径が広がるすり鉢状の斜面とし、ガス吐出口４０とガス流路４１との境界にて内周面に角部が形成されるように外側に向けて折曲し、ガス吐出口４０の下流側端部は電極板３２Ｂの下面３００に湾曲面により繋がるように構成した。またガス吐出口４０の内壁に沿った直線とガス流路４１の軸線Ｌとのなす角度θ１を４５°に設定した。さらに溶射材料５０としてイットリアを用い実施の形態に示した溶射膜成膜方法によって溶射膜６を成膜した例を実施例１とした。
［実施例２］
ガス吐出口４０を軸線Ｌを含む断面で見たときに上流側端部から下流側端部まで直線部分４２のみとなる斜面で構成され、ガス吐出口４０の上流側端部のガス流路４１との間の境界部Ｐａ及びガス吐出口４０の下流側端部と電極板３２Ｂの処理空間側の面との境界部Ｐｂとが夫々第１の角部及び第２の角部となるように構成した。またガス吐出口４０の内壁と、軸線Ｌとのなす角度θ２が４５°になるように設定したことを除いて実施例１と同様に構成した例を実施例２とした。
［実施例３］
図８に示すようにガス吐出口４０の内壁と、軸線Ｌとのなす角度θ２が７０°になるように形成されたことを除いて実施例２と同様に構成した例を実施例３とした。
［比較例］
図９に示すようにガス吐出口４０をガス流路４１の軸線Ｌを含む断面で見たときに、上流側端部から下流側端部まで曲率半径１ｍｍの寸法の曲線部分４３となるように構成したことを除いて実施例１と同様に構成した例を比較例とした。 [Example 1]
As shown in FIG. 2, the gas discharge port 40 is formed as a mortar-shaped slope whose inner diameter increases toward the downstream side, and the outer side is formed such that a corner is formed on the inner peripheral surface at the boundary between the gas discharge port 40 and the gas flow path 41. The downstream end of the gas discharge port 40 is configured to be connected to the lower surface 300 of the electrode plate 32B by a curved surface. Further, an angle θ1 formed by a straight line along the inner wall of the gas discharge port 40 and the axis L of the gas flow path 41 was set to 45 °. Further, Example 1 was used in which the thermal spray film 6 was formed by the thermal spray film formation method described in the embodiment using yttria as the thermal spray material 50.
[Example 2]
When the gas discharge port 40 is viewed in a cross-section including the axis L, the gas flow channel 41 is formed by an inclined surface having only a straight portion 42 from the upstream end to the downstream end, and is located at the upstream end of the gas discharge port 40. And the boundary portion Pb between the downstream end portion of the gas discharge port 40 and the surface on the processing space side of the electrode plate 32B become the first corner portion and the second corner portion, respectively. Configured. In addition, Example 2 was configured as Example 2 except that the angle θ2 formed by the inner wall of the gas discharge port 40 and the axis L was set to 45 °.
[Example 3]
An example configured as in Example 2 except that the angle θ2 formed by the inner wall of the gas discharge port 40 and the axis L is 70 ° as shown in FIG. .
[Comparative example]
As shown in FIG. 9, when the gas discharge port 40 is viewed in a cross section including the axis L of the gas flow path 41, a curved portion 43 having a radius of curvature of 1 mm is formed from the upstream end to the downstream end. An example configured in the same manner as in Example 1 except for the configuration was used as a comparative example.

実施例１〜３及び比較例の各々のガス供給部３に形成したガス吐出口４０において、溶射膜６の膜厚を測定した。
各例のガス吐出口４０における溶射膜６の膜厚の測定地点について説明する。図１０に示すように、まずガス吐出口４０を軸線Ｌを通過する断面で見て、ガス吐出口４０の上流側端部の境界部ＰＡから軸線Ｌに垂直な方向に伸びる線と、ガス吐出口４０の下流側端部の境界部Ｐｂから軸線Ｌに平行な方向に伸びる線との交点を定めた。そしてその交点と溶射膜６の表面とを結ぶ直線と軸線Ｌに垂直な線とのなす角度が夫々９０、７５、６０、４５、３０、１５及び０°となる地点を夫々地点Ｐ１〜Ｐ７とした。実施例１〜実施例３及び比較例の各々のサンプルの断面をＳＥＭ（走査型電子顕微鏡）により撮影し、当該写真より各地点の膜厚を測定した。 The film thickness of the sprayed film 6 was measured at the gas discharge ports 40 formed in the gas supply portions 3 of Examples 1 to 3 and the comparative example.
The measurement point of the film thickness of the sprayed film 6 in the gas discharge port 40 of each example will be described. As shown in FIG. 10, first, when the gas discharge port 40 is viewed in a cross section passing through the axis L, a line extending in a direction perpendicular to the axis L from the boundary PA at the upstream end of the gas discharge port 40, An intersection with a line extending in a direction parallel to the axis L from the boundary Pb at the downstream end of the outlet 40 was determined. Then, points P1 to P7 are points where angles formed by a straight line connecting the intersection and the surface of the sprayed film 6 and a line perpendicular to the axis L are 90, 75, 60, 45, 30, 15 and 0 °, respectively. did. The cross sections of the samples of Examples 1 to 3 and the comparative example were taken with an SEM (scanning electron microscope), and the film thickness at each point was measured from the photograph.

表１はこの結果を示し、実施例１〜３及び比較例の各々における地点Ｐ１〜Ｐ７における溶射膜６の膜厚を各々の例におけるＰ１の膜厚を１として規格化した値で示している。   Table 1 shows this result, and shows the film thickness of the sprayed film 6 at the points P1 to P7 in each of Examples 1 to 3 and the comparative example as a value normalized with the film thickness of P1 in each example being 1. .

［表１］

Figure 2018107313
[Table 1]
Figure 2018107313

表１に示すように比較例においては、地点Ｐ１〜Ｐ４では、溶射膜６の膜厚は、０．８以上であったが、地点Ｐ５で０．７、地点Ｐ６、Ｐ７では夫々０．４、０．２と膜厚が薄くなっていた。
また実施例１〜３においては、各々地点Ｐ１〜Ｐ６において、溶射膜６の膜厚は０．７以上を示しており、略０．８以上の値であった。また実施例１と実施例２とを比較すると、地点Ｐ２及び地点Ｐ３において実施例１は、実施例２よりも膜厚が厚くなっていることがわかる。 As shown in Table 1, in the comparative example, the film thickness of the sprayed film 6 was 0.8 or more at the points P1 to P4, but 0.7 at the point P5 and 0.4 at the points P6 and P7, respectively. 0.2 and the film thickness was thin.
Moreover, in Examples 1-3, the film thickness of the sprayed film 6 has shown 0.7 or more in each point P1-P6, and was the value of about 0.8 or more. Moreover, when Example 1 and Example 2 are compared, it turns out that the film thickness of Example 1 is thicker than Example 2 in the point P2 and the point P3.

この結果によれば、比較例においては、ガス吐出口４０の上流側において膜厚が薄くなりやすいが、実施例１〜３のガス供給部３は、ガス吐出口４０に被覆された溶射膜の膜厚が均一になっていると言える。またガス吐出口４０の内面と、ガス流路４１の軸線Ｌとのなす角度をθ２を４５°以上に構成することで溶射膜６の膜厚の均一性が高まると言える。さらにガス吐出口４０の斜面を、ガス流路４１の軸線を含む断面で見たときに、上流側端部から下流側に向かう直線部分４２に加えて、ガス吐出口４０の下流側と電極板３２Ｂの一面側までを湾曲面として形成することで、よりガス吐出口４０の下流側端部付近の溶射膜６の膜厚の均一性も良好になると言える。   According to this result, in the comparative example, the film thickness tends to be thin on the upstream side of the gas discharge port 40, but the gas supply unit 3 of Examples 1 to 3 is a sprayed coating coated on the gas discharge port 40. It can be said that the film thickness is uniform. Moreover, it can be said that the uniformity of the film thickness of the sprayed film 6 is enhanced by configuring the angle formed between the inner surface of the gas discharge port 40 and the axis L of the gas flow path 41 so that θ2 is 45 ° or more. Further, when the inclined surface of the gas discharge port 40 is viewed in a cross section including the axis of the gas flow path 41, in addition to the straight portion 42 directed from the upstream end to the downstream side, the downstream side of the gas discharge port 40 and the electrode plate By forming the curved surface up to one surface side of 32B, it can be said that the uniformity of the film thickness of the sprayed film 6 near the downstream end of the gas discharge port 40 becomes better.

２ サセプタ
５ 溶射部
６ 溶射膜
１０ 処理容器
２１ 下部電極
３０ シャワーヘッド
３２Ｂ 電極板
４０ 開口部
４２ 直線部分
４３ 曲線部分
５０ 溶射材料
Ｇ ガラス基板 2 Susceptor 5 Thermal spray part 6 Thermal spray film 10 Processing vessel 21 Lower electrode 30 Shower head 32B Electrode plate 40 Opening part 42 Straight line part 43 Curve part 50 Thermal spray material G Glass substrate

Claims (5)

プラズマを発生させるための電極部材と、
前記電極部材に当該電極部材の一面に向かって伸びるように形成された複数のガス流路と、
前記ガス流路の下流端に連続して形成され、孔径が前記一面に向かって拡大するガス吐出口と、
前記ガス吐出口の表面に溶射膜により形成された保護膜と、を備え、
前記ガス流路と前記ガス吐出口との境界にて内周面を外側に向けて折曲して角部を形成すると共に、前記角部よりも外側に位置する内周面の部位から前記電極部材の一面側の表面までを湾曲面として形成し、前記ガス流路の軸線に沿った断面で見たときに、前記角部から前記湾曲面の内端までの間は直線であることを特徴とするガス供給装置。 An electrode member for generating plasma;
A plurality of gas flow paths formed on the electrode member so as to extend toward one surface of the electrode member;
A gas discharge port formed continuously at the downstream end of the gas flow path and having a hole diameter expanding toward the one surface;
A protective film formed of a sprayed film on the surface of the gas discharge port,
The inner peripheral surface is bent outward at the boundary between the gas flow path and the gas discharge port to form a corner portion, and the electrode is formed from a portion of the inner peripheral surface located outside the corner portion. A surface up to one surface side of the member is formed as a curved surface, and when viewed in a section along the axis of the gas flow path, a straight line extends from the corner to the inner end of the curved surface. Gas supply device. 前記角部と前記湾曲面における内端とを結ぶ直線と、前記ガス流路の軸線と、がなす角度θ１は、４５度から５０度の範囲に設定されていることを特徴とする請求項１記載のガス供給装置。   The angle θ1 formed by a straight line connecting the corner and the inner end of the curved surface and the axis of the gas flow path is set in a range of 45 degrees to 50 degrees. The gas supply device described. プラズマを発生させるための電極部材と、
前記電極部材に当該電極部材の一面に向かって伸びるように形成された複数のガス流路と、
前記ガス流路の下流端に連続して形成され、孔径が前記一面に向かって拡大するガス吐出口と、
前記ガス吐出口の表面に溶射膜により形成された保護膜と、を備え、
前記ガス流路と前記ガス吐出口との境界にて内周面を外側に向けて折曲して角部を形成すると共に、前記ガス流路の軸線に沿った断面で見たときに、前記角部から、前記ガス吐出口の外端に至るまでの内周面は直線であり、当該直線と前記ガス流路の軸線とがなす角度θ２は、４５度から７０度の範囲に設定されていることを特徴とするガス供給装置。 An electrode member for generating plasma;
A plurality of gas flow paths formed on the electrode member so as to extend toward one surface of the electrode member;
A gas discharge port formed continuously at the downstream end of the gas flow path and having a hole diameter expanding toward the one surface;
A protective film formed of a sprayed film on the surface of the gas discharge port,
When the inner circumferential surface is bent outward at the boundary between the gas flow path and the gas discharge port to form a corner, and when viewed in a cross section along the axis of the gas flow path, The inner peripheral surface from the corner to the outer end of the gas discharge port is a straight line, and the angle θ2 formed by the straight line and the axis of the gas flow path is set in a range of 45 degrees to 70 degrees. A gas supply device characterized by comprising: 請求項１ないし３のいずれか一項に記載のガス供給装置の製造方法であって、前記電極部材における前記ガス吐出口が形成された面に向けて溶射材料を吹き付ける溶射部を、前記ガス流路の伸びる方向に対して直交する方向に移動させて溶射膜を成膜することを特徴とするガス供給装置の製造方法。   4. The method of manufacturing a gas supply device according to claim 1, wherein a thermal spray portion that sprays a thermal spray material toward a surface of the electrode member on which the gas discharge port is formed is provided with the gas flow. A method of manufacturing a gas supply apparatus, wherein a sprayed film is formed by moving in a direction orthogonal to a direction in which a path extends. 内部にプラズマを発生させるための処理容器と、
前記処理容器内に設けられた基板を載置する載置台と、
前記処理容器内にプラズマ処理用の処理ガスを供給する請求項１ないし３のいずれか一項に記載のガス供給装置と、
前記載置台と電極部材との間に高周波電力を供給する高周波電源部と、
処理容器内を真空排気をするための排気機構と、を備えたことを特徴とするプラズマ処理装置。 A processing vessel for generating plasma inside,
A mounting table for mounting a substrate provided in the processing container;
The gas supply device according to any one of claims 1 to 3, wherein a processing gas for plasma processing is supplied into the processing container.
A high-frequency power supply for supplying high-frequency power between the mounting table and the electrode member;
A plasma processing apparatus comprising: an exhaust mechanism for evacuating the inside of the processing container.
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