CN108242381A - Gas supply device and its manufacturing method and plasma processing apparatus - Google Patents
Gas supply device and its manufacturing method and plasma processing apparatus Download PDFInfo
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- CN108242381A CN108242381A CN201711417582.3A CN201711417582A CN108242381A CN 108242381 A CN108242381 A CN 108242381A CN 201711417582 A CN201711417582 A CN 201711417582A CN 108242381 A CN108242381 A CN 108242381A
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- gas
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- gas discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Abstract
Present invention offer is a kind of in the gas supply device of the corona treatment of the electrod assembly including being formed with multiple gas discharge outlets, realizes the technology of the homogenization for the film thickness for making to be formed in the sputtered films of bismuth of gas discharge outlet.It is formed in the gas supply device of electrode plate (32B) of multiple gas flow paths (41) for having for corona treatment, it is bent outward in a manner that the boundary portion (Pa) in gas flow path 41 and gas discharge outlet (40) forms corner, is formed as flexure plane from the inner peripheral surface positioned at the outside in corner to lower surface (300).Therefore, the direction of attached depositing materials (50) is blown when blowing attached depositing materials (50) to gas discharge outlet (40) and the inner peripheral surface angulation of gas discharge outlet (40) becomes larger, and can prevent the filming of the near border of the upstream side of gas discharge outlet (40).
Description
Technical field
The present invention relates to the gas supply devices including electrod assembly used when carrying out corona treatment to substrate
Technical field.
Background technology
As semiconductor manufacturing apparatus, there is the plasma for being carried out film process, etching etc. to substrate using plasma
Body, such as it has been known that there is the gas supply parts for being referred to as gas tip etc. in dual-purpose upper electrode and the substrate of dual-purpose lower electrode
Mounting table between apply RF power parallel plate-type plasma processing apparatus.
In this plasma processing apparatus, multiple gas streams are formed in the upper electrode for gas supply part
Road is formed with the gas discharge outlet (gas opening) that hole portion expands in the lower end of gas flow path.In this upper electrode, formed
Particle caused by being consumed due to the alumite on the surface of upper electrode is because plasma lead to the problem of and paradoxical discharge become.Cause
This, it is desirable that the raising of the plasma-resistance of gas discharge outlet.
In order to improve the plasma-resistance of upper electrode, arranged as such as described in patent document 1,2 in gas
The surface for having carried out alumite processing of outlet carries out ceramic spraying plating, forms the technology of protective film.In such gas discharge outlet
Opening portion when being formed about sputtered films of bismuth, such as from vertical side on a face (face opposite with mounting table) for upper electrode
Attached depositing materials are blown to using spray torch, spray torch is made to be moved in parallel along said one face, spraying plating is formed in each gas discharge outlet
Film.
But when blowing attached depositing materials from vertical direction using spray torch on said one face, gas discharge outlet
The part of the upstream side of inner peripheral surface, inner peripheral surface and depositing materials blow subsidiary formula to angle become smaller, it is difficult to blow attached depositing materials.Cause
This, has the tendency that sputtered films of bismuth is thinning at the position of the upstream vicinity of gas discharge outlet.When sputtered films of bismuth is locally thinning, thinning
Position sputtered films of bismuth is reamed and lower floor becomes easily to expose, and deposits the problem of service life of upper electrode shortens.If in addition,
Adjust depositing materials on one side the angle for adjusting spray torch carries out spraying plating while blowing attached angle, then there are spraying plating steps to become numerous
The problem of miscellaneous.
Existing technical literature
Patent document
Patent document 1：No. 5782293 bulletins of Japanese Patent Publication No.
Patent document 2：No. 5198611 bulletins of Japanese Patent Publication No.
Invention content
The technical problem that the invention wants to solve
The present invention in view of this problem, and it is an object of the present invention to provide a kind of in the electrode including being formed with multiple gas discharge outlets
In the gas supply device of the corona treatment of component, realization makes to be formed in the equal of the film thickness of the sputtered films of bismuth of gas discharge outlet
Homogenized technology.
For solving the technical solution of technical problem
The gas supply device of the present invention, which is characterized in that including：
For generating the electrod assembly of plasma；
The multiple gas flow paths formed in a manner of extending to a face of the electrod assembly on above-mentioned electrod assembly；
It is conjointly formed with the downstream of above-mentioned gas flow path, and aperture is gone and widened gas with to said one face
Outlet；With
In the protective film that the surface of above-mentioned gas outlet is formed by sputtered films of bismuth,
On the boundary of above-mentioned gas flow path and above-mentioned gas outlet, inner peripheral surface bends and forms corner outward, and
Be formed as from the surface of position to the face side of above-mentioned electrod assembly of the inner peripheral surface for being located at outside compared with above-mentioned corner
Flexure plane, on the section of the axis along above-mentioned gas flow path, from above-mentioned corner between the inner end of above-mentioned flexure plane be straight line.
In addition, the gas supply device of the present invention, which is characterized in that including：
For generating the electrod assembly of plasma；
The multiple gas flow paths formed in a manner of extending to a face of the electrod assembly on above-mentioned electrod assembly；
It is conjointly formed with the downstream of above-mentioned gas flow path, and aperture is gone and widened gas with to said one face
Outlet；With
In the protective film that the surface of above-mentioned gas outlet is formed by sputtered films of bismuth,
On the boundary of above-mentioned gas flow path and above-mentioned gas outlet, inner peripheral surface bends and forms corner outward, and
On the section of the axis along above-mentioned gas flow path, the inner peripheral surface from above-mentioned corner to the outer end of above-mentioned gas discharge outlet is straight
The axis angulation θ 2 of line, the straight line and above-mentioned gas flow path is set in 45 degree~70 degree of range.
The manufacturing method of the gas supply part of the present invention is the manufacturing method of above-mentioned gas feedway, it is characterised in that：
The spraying plating portion of attached depositing materials is blown in the face that making the formation to above-mentioned electrod assembly has above-mentioned gas outlet, with above-mentioned gas stream
The extending direction on road is orthogonal to form sputtered films of bismuth to movement.
The plasma processing apparatus of the present invention, which is characterized in that including：
For in the internal process container for generating plasma；
The mounting table for being used to load substrate being set in above-mentioned process container；
The above-mentioned gas supply device of the processing gas of corona treatment is supplied into above-mentioned process container；
The high frequency power portion of supply high frequency electric power between above-mentioned mounting table and electrod assembly；With
For to the exhaust gear being vacuum-evacuated in process container.
Invention effect
The present invention for corona treatment, have be formed with multiple gas flow paths electrod assembly gas supply
It in device, is bent outward in a manner of forming corner on the boundary of gas flow path and gas discharge outlet, from positioned at the outer of corner
The face side of the inner peripheral surface of side to electrod assembly is formed as flexure plane.Therefore, attached depositing materials are being blown to gas discharge outlet
When blow the direction of attached depositing materials and the inner peripheral surface angulation of gas discharge outlet becomes larger, the upper of gas discharge outlet can be prevented
Swim the filming of the near border of side.
In addition, in another aspect, on the boundary of gas flow path and gas discharge outlet, inner peripheral surface is to form the 1st corner
Mode bend outward, the inner peripheral surface in the outside in the 1st corner further out lateral bending folding and formed the 2nd corner so as to and electrode
The face side of component is connected.Moreover, from the 1st corner to the 2nd corner along the straight line of inner wall and the axis institute of gas flow path
Angled θ 2 is set as 45 ° or more, less than 70 °.Therefore, depositing materials blow subsidiary formula to the inner peripheral surface of gas discharge outlet institute angulation
Degree becomes larger, so similarly the sputtered films of bismuth of gas discharge outlet becomes easily to form uniform film thickness.
Description of the drawings
Fig. 1 is the sectional view for the plasma processing apparatus for applying the gas supply device of the present invention.
Fig. 2 is the definition graph for the manufacturing step for illustrating nozzle.
Fig. 3 is the definition graph for the sputtered films of bismuth film formation step for illustrating nozzle.
Fig. 4 is the definition graph for the sputtered films of bismuth film formation step for illustrating nozzle.
Fig. 5 is the definition graph for the sputtered films of bismuth film formation step for illustrating existing nozzle.
Fig. 6 is the sectional view for representing gas discharge outlet.
Fig. 7 is the definition graph of gas discharge outlet when representing corona treatment.
Fig. 8 is the sectional view of the gas discharge outlet for the gas supply part for representing the 2nd embodiment.
Fig. 9 is the sectional view of the gas discharge outlet for the nozzle for representing comparative example.
Figure 10 is the definition graph in the measurement place for the film thickness for illustrating embodiment.
Reference sign
2 pedestals
5 spraying plating portions
6 sputtered films of bismuth
10 process containers
21 lower electrodes
30 nozzles
32B electrode plates
40 opening portions
42 straight line portions
43 curved portions
50 depositing materials
G glass substrates.
Specific embodiment
[the 1st embodiment]
Then, the plasma processing apparatus of the gas supply device to using the 1st embodiment illustrates.Such as Fig. 1
Shown, plasma processing apparatus includes process container 10, for such as aluminium of ground connection or the vacuum tank of stainless steel.Locating
The side of reason container 10 is provided with for handing-over as the glass substrate G's of such as rectangle for the substrate to be plasma treated
Carrying-in/carrying-out mouth 11 is provided with the gate valve 12 of opening and closing carrying-in/carrying-out mouth 11 in carrying-in/carrying-out mouth 11.
Central portion in the bottom surface of process container 10 is provided with the flat shape of mounting glass substrate G as rectangle and from upper table
The pedestal 2 of the flat flat column of the lateral circle surface of face to lower surface.Pedestal 2 includes for example having been carried out alumite processing by surface
The lower electrode 21 that aluminium or stainless steel are formed, lower electrode 21 are supported in the bottom of process container 10 across insulating element 22.
The upper surface of lower electrode 21 becomes the substrate mounting surface 21A covered with ceramic spraying plating.In addition, to surround substrate mounting surface 21A
Around mode be provided with cricoid shield member 28, complete cycle is provided with the cricoid screen in side in the side of lower electrode 21
Cover component 29.
The electrostatic attraction electrode plate for the chuck being connect with DC power supply 27 is embedded in the substrate mounting surface 21A of lower electrode 21
23.When applying positive DC voltage to electrostatic attraction electrode plate 23, on the surface for the glass substrate G for being placed in substrate mounting surface 21A
Adsorb negative electrical charge.Potential difference is generated between the electrostatic attraction electrode plate 23 and glass substrate G, the Coulomb force generated using the potential difference
And glass substrate G absorption is remained into substrate mounting surface 21A.It is (not shown) cricoid cold in being internally provided with for lower electrode 21
But device flow path, heat-conduction medium, such as GALDEN (registered trademark) of cycle supply set point of temperature in cooling device flow path,
The treatment temperature for the glass substrate G for being placed in substrate mounting surface 21A can be controlled according to the temperature of heat-conduction medium.
In addition, in pedestal 2, the lifter pin 24 for the handing-over glass substrate G between external conveying arm is set
Into the bottom surface for penetrating through lower electrode 21, insulating element 22 and process container 10 in vertical direction, from the surface of lower electrode 21
It protrudes and submerges.
In addition, in surface opening multiple heat-conducting gas taps (not shown) of substrate mounting surface 21A, arranged from heat-conducting gas
Portal and heat-conducting gas such as helium (He) gas is supplied between substrate mounting surface 21A and glass substrate G.Using the helium in glass base
Heat is effectively transmitted between piece G and pedestal 2.
Lower electrode 21 is via adaptation 26 and the height for being used to be formed the electric field of plasma generation in process container 10
Frequency power portion 25 connects.The high frequency power portion 25 can export the high frequency of for example higher frequency such as 13.56MHz.In addition,
It is equally spaced open multiple exhaust outlets 13 throughout its edge complete cycle in the bottom surface of process container 10, each exhaust outlet 13 is via exhaust pipe
14 connect with being vacuum-evacuated portion 15.It exhaust outlet 13, exhaust pipe 14 and is vacuum-evacuated portion 15 and is equivalent to exhaust gear.
Gas supply part 30 is provided in a manner of opposite with the upper surface of pedestal 2 in the upper surface of process container 10,
To be used to supply such as CF to glass substrate G4Etc. the gas of corona treatments gas supply device.Gas supply part 30
Commonly referred to as " nozzle " is illustrated below with nozzle 30, and nozzle 30 includes：It is formed in the lower surface using such as aluminium as base material
There is the electrode plate 32B as electrod assembly of the lower surface of the upper-part 32A and closing upper-part 32A of recess portion.Upper-part 32A with
Gap between electrode plate 32B forms the diffusion space 31 for DIFFUSION TREATMENT gas.It is formed in electrode plate 32B in thickness side
The multiple gas flow paths 41 connected to through electrode plate 32B and with each diffusion space 31.In addition, it is set in the upper surface of nozzle 30
The processing gas supply pipe 33 being connect with diffusion space 31 is equipped with, is disposed with from upstream side in processing gas supply pipe 33
Such as CF4Deng processing gas supply source 34, flow adjustment portion 35 and valve 36, to nozzle 30 supply processing gas.
As shown in Fig. 2, being provided in the electrode plate 32B of nozzle 30 makes gas be flowed to from diffusion space 31 with pedestal 2 relatively
The face side processing space side of plasma (excitation) gas flow path 41.Gas flow path 41, when setting diffusion space 31
When side is upstream, processing space side is downstream, upstream side is formed as the flow path 41a of major diameter, and downstream side is formed as the flow path of path
41b, and then form the gas discharge outlet 40 of the oriented processing space side opening for exciting plasma in end of downstream side.Gas stream
The internal diameter of the flow path 41a of the major diameter on road 41 is set as such as 2mm.In addition, the flow path 41b of path be configured to for example internal diameter 0.5~
1.0mm prevents the upstream side for entering gas flow path 41 in the plasma that processing space side is excited.
The inner circumferential side of gas discharge outlet 40 is chamfered throughout complete cycle, and the aperture of gas discharge outlet 40 is expanded from upstream toward downstream
Exhibition.On the section of the axis L comprising gas flow path 41, the chamfered portion of each gas discharge outlet 40 includes：From the end of upstream side
Downstream side goes the axis L relative to gas flow path 41 to be at an angle of θ 1, is herein 45 ° of inclined straight line portions 42 in portion；From straight line
42 end of downstream side of part goes and outward with lower surface (opposite face) the 300 continuous curved portion 43 opposite with pedestal 2.It should
Curved portion 43 is configured to the curve for the size that radius of curvature is 1mm.That is, gas discharge outlet 40 is in gas discharge outlet 40 and gas
The mode that the boundary of body flow path 41 forms the corner of boundary portion Pa in inner peripheral surface is bent outward, from the ratio side of gas discharge outlet 40
The lower surface 300 of the position of the corner downstream of portion of boundary Pa to electrode plate 32B are formed as flexure plane.Wherein, 300 table of lower surface
Show the planar portions of the boundary portion Pb of the end of the ratio flexure plane of gas discharge outlet 40 in the outer part.
The entire surface of the electrode plate 32B of inner peripheral surface comprising upper-part 32A, gas flow path 41 and gas discharge outlet 40,
Such as anodized is carried out, the entire surface of nozzle 30 is covered by hard alumite 30A.Moreover, opening in electrode plate 32B
The face side that mouth has gas discharge outlet 40 carries out forming yttrium oxide (Y2O3), yttrium fluoride (YF3) or aluminium oxide (Al2O3) etc.
The processing of the sputtered films of bismuth of protective film.As shown in figure 3, coating apparatus includes such as plasma spraying rifle for blowing attached depositing materials 50
Wait spraying platings portion 5.It is vertical with the lower surface 300 of electrode plate 32B with the discharge direction of depositing materials 50 when forming sputtered films of bismuth 6
Mode is fixed.
Moreover, as shown in figure 3, blow attached depositing materials 50 from spraying plating portion 5 to the lower surface 300 of electrode plate 32B, make spraying plating portion
5 move in parallel to the direction orthogonal with the extending direction of gas flow path 41, and sputtered films of bismuth 6 is formed in each gas discharge outlet 40.Such as
The upper gas discharge outlet 40 is for example set as 45 ° in the straight line portion 42 of above-mentioned section upper edge inner wall with axis L angulations.
Moreover, gas discharge outlet 40 is in a manner that the boundary portion Pa in gas discharge outlet 40 and gas flow path 41 is in inner peripheral surface formation corner
It bends outward, the 300 position flexure plane of lower surface in the downstream side of the straight line portion 42 of gas discharge outlet 40 to electrode plate 32B
Connection.
When the axis L to such gas discharge outlet 40 and gas flow path 41 parallelly blows attached depositing materials 50, such as Fig. 4
Shown, the angle [alpha] between the inner surface for blowing attached angle and gas discharge outlet 40 of depositing materials 50 is 45 °.
In contrast, it is bent, makes from gas discharge outlet 40 and gas in the lateral circle surface for making gas discharge outlet 40 as shown in Figure 5
The lower surface 300 of boudary portion (upstream side end of gas discharge outlet 40) to the electrode plate 32B of flow path 41 are formed as flexure plane
In the case of, near the upstream end of gas discharge outlet 40, depositing materials 50 blow the interior of attached angle and gas discharge outlet 40
Angle [alpha] between surface is less than 45 °.
Therefore, parallelly the face of the processing space side of electrode plate 32B is blown with the axis L of gas flow path 41 as shown in Figure 3
During attached depositing materials 50, in gas discharge outlet 40 shown in Fig. 5 shown in embodiment as be described hereinafter, in the upper of gas discharge outlet 40
The region of side is swum, depositing materials 50 blow attached angle [alpha] to the inner peripheral surface of gas discharge outlet 40 and become smaller.Therefore, in gas discharge outlet
40 upstream side, the film thickness of sputtered films of bismuth 6 are thinning.
In contrast, in gas discharge outlet 40 shown in Fig. 4, depositing materials 50 are blown with 45 ° of angle is attached to gas
The inner peripheral surface of outlet 40.Therefore, in the upstream side end of gas discharge outlet 40, also with the spraying plating with being formed in lower surface 300
The equal film thickness film forming of film 6.Therefore, as shown in fig. 6, the inner surface in gas discharge outlet 40 is formed uniformly sputtered films of bismuth 6.Separately
Outside, from the corner of gas discharge outlet 40 and the boundary portion Pa of gas flow path 41 to the following table of gas discharge outlet 40 and electrode plate 32B
The horizontal distance S1 of the boundary portion Pb in face 300 is formed as below 1mm.
In addition, the horizontal distance S1 between boundary portion Pb and boundary portion Pa is preferably set to 0.5~1mm.Therefore, will under
In the case that trip side end is connected with the lower surface 300 of electrode plate 32B with flexure plane, inner wall and the axis L of gas discharge outlet 40
Angulation θ 1 is preferably set to 45~50 °.
It is formed with the electrode plate 32B of sputtered films of bismuth 6 like this, after being engaged with upper-part 32A, with above-mentioned processing gas
Supply pipe 33 connects and is set to process container 10, and connect with earthing potential.The electrode plate 32B of nozzle 30 and lower part as a result,
Electrode 21 forms a pair of parallel plate electrode together.
Then, the effect of plasma processing unit is for example illustrated by taking etching process as an example.At plasma
When managing device and starting, as by the glass substrate G of processing substrate by the synergistic effect of external conveying arm and lifter pin 24 and
It is placed into substrate mounting surface 21A.Then, it after closing gate valve 12, is supplied between substrate mounting surface 21A and glass substrate G
Heat-conducting gas and apply DC voltage to electrostatic attraction electrode plate 23, absorption keeps glass substrate G.
Then, such as CF will be included4The processing gas of etching gas is waited to be supplied to process container 10 from gas supply part 3
It is interior, it is vacuum-evacuated from exhaust outlet 13 and the pressure in process container 10 is adjusted to defined pressure.Later, from high-frequency electrical
The RF power of plasma generation is applied to 21 main body of lower electrode by source portion 25 via adaptation 26, in lower electrode 21
The electric field of high frequency is generated between nozzle 30.The processing gas being fed into process container 10, by lower electrode 21 and spray
The electric field excitation of the high frequency generated between first 30 generates the plasma of processing gas.In addition, ion contained in plasma
Attracted by lower electrode 21, to being etched by process film for glass substrate G.Later, the glass of etching process has been carried out
Substrate G is moved out by external conveying arm from process container 10.
Like this when the excitation plasma in process container 10 in plasma processing apparatus, spray as shown in Figure 7
The face of first 30 processing space side and plasma P contacts.At this time in gas discharge outlet 40, the inner surface of gas discharge outlet 40 with
Plasma contact, but gas flow path 41 narrows so plasma P is to gas flow path due to the internal diameter of the flow path 41b in downstream side
The risk that 41 sides enter is small.It is covered moreover, gas discharge outlet 40 is plated film 6, so the hard of the lower layer side of sputtered films of bismuth 6 is acidproof
The layer of aluminium 30A is protected against the influence of plasma P.
Then, because corona treatment is repeated, its film thickness due to consumption of sputtered films of bismuth 6 is slowly thinning.At this point, being formed
In the case of the membrane thickness unevenness of the sputtered films of bismuth 6 of gas discharge outlet 40, at the thin position of the film thickness of sputtered films of bismuth 6, lower layer side
The aluminium of the layer of hard alumite 30A or the base material as electrode plate 32B can locally expose.When the base material as electrode plate 32B
When aluminium exposes, being abnormal electric discharge or because aluminium due in gas discharge outlet 40 leads to the generation of particle, so needing to carry out gas confession
To the replacement and maintenance in portion 3.
The high uniformity of the film thickness of sputtered films of bismuth 6 of the nozzle 30 due to being formed in gas discharge outlet 40 as described above, so energy
The part of the aluminium of lower layer side when corona treatment is repeated in enough inhibition caused by the thinning of sputtered films of bismuth 6 is exposed, so nozzle
30 service life is elongated, can extend the period of replacement and maintenance.
According to the 1st embodiment, for corona treatment, there is the electrode plate for being formed with multiple gas flow paths 41
In the gas supply device of 32B, the mode that corner is formed with the boundary portion Pa in gas flow path 41 and gas discharge outlet 40 is outside
Lateral bending is rolled over, and is formed as flexure plane from the inner peripheral surface positioned at the outside in corner to lower surface 300.Therefore it is blown to gas discharge outlet 40
It blows the direction of attached depositing materials 50 during attached depositing materials 50 with the inner peripheral surface angulation of gas discharge outlet 40 to become larger, Neng Goufang
The only filming of the near border of the upstream side of gas discharge outlet 50.
As a result, when gas supply part 3 forms sputtered films of bismuth 6, by blowing attached spraying plating material from the extending direction of gas flow path 41
Material 50 just can be formed uniformly sputtered films of bismuth 6 in gas discharge outlet 40, by make to blow the spraying plating portions 5 of attached depositing materials 50 to gas
The orthogonal direction of the extending direction of body flow path 41 is mobile and changes the position for blowing attached depositing materials 50, can be in each gas discharge outlet
40 form uniform sputtered films of bismuth 6.
Therefore, sputtered films of bismuth film process become simple, and the depositing materials 50 for not needing to for example to adjust spraying plating portion 5 blow attached angle
Spend and blown again in the thin part of sputtered films of bismuth 6 again the step of attached 50 grade complexity of depositing materials.
Furthermore, it is also possible to applied to the plasma processing apparatus that film process are carried out on substrate, do not need to glass
Substrate G carry out corona treatment plasma processing apparatus, or to disk-shaped such as diameter 300mm chips into
The plasma processing apparatus of row corona treatment.
[the 2nd embodiment]
In addition, the gas supply device as the 2nd embodiment, as shown in figure 8, each gas discharge outlet 40 is including axis
On the section of L, it can also be discharged from upstream side end to end of downstream side by being only that the inclined-plane of straight line portion 42 is formed in gas
The end of downstream side and electrode plate of boundary portion Pa and gas discharge outlet 40 between the upstream side end of mouth 40 and gas flow path 41
The boundary portion Pb of the lower surface 300 of 32B is respectively formed the 1st corner and the 2nd corner.Shown in embodiment as be described hereinafter, as long as each gas
The angle, θ 2 of the inner surface of body outlet 40 relative to axis L be 45 ° or more, then when blowing attached depositing materials 50 from spraying plating portion 5
The sputtered films of bismuth 6 of gas discharge outlet 40 equably forms a film so there is same effect.
In addition, as shown in Figure 8 in gas discharge outlet 40, inner surface and the axis L angulations θ of each gas discharge outlet 40
2 when becoming larger, and needs that the internal diameter of the end of downstream side of gas discharge outlet 40 is made to become larger or make from the upstream side of gas discharge outlet 40
The height dimension of end to end of downstream side becomes smaller.When the internal diameter of the end of downstream side of gas discharge outlet 40 becomes larger, it is set to
The alignment placement of gas discharge outlet 40 and the degree of freedom of the number of permutations in the face of the processing space side of gas supply part 3 are restricted.
In addition, in the case where the height dimension of the upstream side end from gas discharge outlet 40 to end of downstream side is low, the gas of discharge
Flow velocity become faster, become easily to block gas flow path 41.Therefore, the inner wall of each gas discharge outlet 40 and axis L angulations θ
2 preferably 70 ° hereinafter, horizontal distance between the boundary portion Pb in the downstream side of gas discharge outlet 40 and the boundary portion Pa of upstream side
S2 is preferably 1~3mm.
Even if in addition, embodiment as be described hereinafter is shown under the end of downstream side of gas discharge outlet 40 and electrode plate 32B
The film thickness that the boundary portion Pb on surface 300 makes sputtered films of bismuth 6 in the case of corner also shows high uniformity, but by by downstream side
Portion is connected with the face of the processing space side of electrode plate 32B with flexure plane, can also make spray in 40 end of downstream side of gas discharge outlet
The film thickness of plated film 6 becomes uniform.
In addition, when as corner, electric field is partly concentrated and can be abnormal and discharge or due to the influence of paradoxical discharge
Corner is cut and causes the generation of particle, so by making the bending of the end of downstream side of gas discharge outlet 40 that can inhibit abnormal
Electric discharge and the generation of particle.
(embodiment)
In order to examine the effect of embodiments of the present invention, to by the method shown in embodiment in following embodiment
1~3 and the film thickness distribution of sputtered films of bismuth 6 of gas discharge outlet 40 when forming sputtered films of bismuth 6 of the gas supply part 3 of comparative example carry out
Investigation.
[embodiment 1]
As shown in Fig. 2, gas discharge outlet 40 is made to the inclined-plane of the more downstream taper that side internal diameter more extends, in gas
The mode that the boundary of outlet 40 and gas flow path 41 forms corner in inner peripheral surface is bent outward, the downstream of gas discharge outlet 40
300 position of lower surface of side end to electrode plate 32B are connected with flexure plane.It in addition, will be along the straight of the inner wall of gas discharge outlet 40
The axis L angulations θ 1 of line and gas flow path 41 is set as 45 °.It moreover, will be by using yttrium oxide as depositing materials
Sputtered films of bismuth film build method shown in 50 embodiment forms the example of sputtered films of bismuth 6 as embodiment 1.
[embodiment 2]
On the section comprising axis L, gas discharge outlet 40 is from upstream side end to end of downstream side by being only straight line portion
42 inclined-plane is divided to form, boundary portion Pa and gas discharge between the upstream side end of gas discharge outlet 40 and gas flow path 41
The end of downstream side of mouth 40 and the boundary portion Pb in the face of the processing space side of electrode plate 32B are respectively formed the 1st corner and the 2nd jiao
Portion.In addition, in addition to inner wall and the axis L angulations θ 2 of gas discharge outlet 40 set it is at 45 ° other than form similarly to Example 1
Example be embodiment 2.
[embodiment 3]
As shown in figure 8, other than inner wall and the axis L angulations θ 2 of gas discharge outlet 40 are formed as 70 ° with implementation
The example that example 2 equally constitutes is embodiment 3.
[comparative example]
As shown in figure 9, during by addition in terms of the section of the axis L comprising gas flow path 41, gas discharge outlet 40 is configured to
From upstream side end to end of downstream side as structure similarly to Example 1 other than the curved portion 43 of the size of radius of curvature 1mm
Into example as comparative example.
In being each formed in the gas discharge outlet 40 of gas supply part 3 for Examples 1 to 3 and comparative example, spray is measured
The film thickness of plated film 6.
The measurement place of the film thickness of the sputtered films of bismuth 6 of the gas discharge outlet 40 of each example is illustrated.As shown in Figure 10, it is first
First, in the section gas discharge outlet 40 by axis L, it is determined that from the boundary portion of the upstream side end of gas discharge outlet 40
PA to the line that the direction vertical with axis L extends and the end of downstream side from gas discharge outlet 40 boundary portion Pb to axis L
The intersection point of the line of parallel direction extension.Then, by this by the surface of intersection point and sputtered films of bismuth 6 connection straight line with perpendicular to axis
The line angulation of L is respectively that 90 °, 75 °, 60 °, 45 °, 30 °, 15 ° and 0 ° of place is set to place P1~P7.It utilizes
The section of the respective sample of 1~embodiment of SEM (scanning electron microscope) shooting embodiments 3 and comparative example, passes through the photograph
Piece measures the film thickness in each place.
Table 1 is represented as a result, the film thickness of Examples 1 to 3 and the sputtered films of bismuth 6 of respective place P1~P7 of comparative example is used
Value after being standardized using the film thickness of the P1 in respective example as 1 represents.
[table 1]
| P1 | P2 | P3 | P4 | P5 | P6 | P7 | |
| Embodiment 1 | 1.0 | 0.9 | 0.9 | 0.8 | 0.8 | 0.9 | 0.2 |
| Embodiment 2 | 1.0 | 0.7 | 0.8 | 0.8 | 0.9 | 0.9 | 0.2 |
| Embodiment 3 | 1.0 | 0.9 | 0.9 | 0.9 | 0.9 | 0.9 | 0.1 |
| Comparative example | 1.0 | 0.9 | 0.9 | 0.8 | 0.7 | 0.4 | 0.2 |
As shown in table 1 in a comparative example, in place P1~P4, the film thickness of sputtered films of bismuth 6 is more than 0.8, and in place, P5 is
0.7, in place, P6, P7 are respectively that 0.4,0.2 film thickness is thinning.
In addition, in Examples 1 to 3, in each place P1~P6, the film thickness of sputtered films of bismuth 6 shows more than 0.7, is substantially
More than 0.8 value.In addition embodiment 1 is compared with embodiment 2, it is known that embodiment 1 is than implementing in place P2 and place P3
2 film thickness of example is thick.
It is easily thinning in the upstream side film thickness of gas discharge outlet 40 according to this as a result, in a comparative example, but Examples 1 to 3
Gas supply part 3 in, it may be said that being covered in the film thickness of the sputtered films of bismuth of gas discharge outlet 40 becomes uniform.In addition, by making gas
The inner surface of body outlet 40 is 45 ° or more with the axis L angulations θ 2 of gas flow path 41, it may be said that the film of sputtered films of bismuth 6
Thick uniformity increases.Moreover, on the section of the axis comprising gas flow path 41, by the scarf for making gas discharge outlet 40
As being added on the basis of the upstream side end downstream straight line portion 42 of side to the downstream side of gas discharge outlet 40 and electricity
The face side of pole plate 32B is formed as flexure plane, it may be said that sputtered films of bismuth 6 near the end of downstream side of gas discharge outlet 40
The uniformity of film thickness becomes more preferable.
Claims (5)
1. a kind of gas supply device, which is characterized in that including：
For generating the electrod assembly of plasma；
The multiple gas flow paths formed in a manner of extending to a face of the electrod assembly on the electrod assembly；
Conjointly formed with the downstream of the gas flow path, and aperture with gone to one face and widened gas discharge
Mouthful；With
In the protective film that the surface of the gas discharge outlet is formed by sputtered films of bismuth,
On the boundary of the gas flow path and the gas discharge outlet, inner peripheral surface bends and forms corner outward, and from
The surface that position to the face side of the electrod assembly of the inner peripheral surface positioned at outside are compared in the corner is formed as being bent
Face, on the section of the axis along the gas flow path, from the corner between the inner end of the flexure plane be straight line.
2. gas supply device as described in claim 1, it is characterised in that：
Link the corner and the straight line of the inner end of the flexure plane to set with the axis angulation θ 1 of the gas flow path
In 45 degree~50 degree of range.
3. a kind of gas supply device, which is characterized in that including：
For generating the electrod assembly of plasma；
The multiple gas flow paths formed in a manner of extending to a face of the electrod assembly on the electrod assembly；
Conjointly formed with the downstream of the gas flow path, and aperture with gone to one face and widened gas discharge
Mouthful；With
In the protective film that the surface of the gas discharge outlet is formed by sputtered films of bismuth,
On the boundary of the gas flow path and the gas discharge outlet, inner peripheral surface bends and forms corner, and outward on edge
It is straight line from the corner to the inner peripheral surface of the outer end of the gas discharge outlet on the section of the axis of the gas flow path, it should
The axis angulation θ 2 of straight line and the gas flow path is set in 45 degree~70 degree of range.
4. a kind of manufacturing method of gas supply device, which is gas according to any one of claims 1 to 3
Body feeding, the manufacturing method of the gas supply device are characterized in that：
The spraying plating portion of attached depositing materials is blown in the face that making the formation to the electrod assembly has the gas discharge outlet, with the gas
It moves to form sputtered films of bismuth in the direction that the extending direction of body flow path is orthogonal.
5. a kind of plasma processing apparatus, which is characterized in that including：
For in the internal process container for generating plasma；
The mounting table for being used to load substrate being set in the process container；
The according to any one of claims 1 to 3 of the processing gas of corona treatment is supplied into the process container
Gas supply device；
The high frequency power portion of supply high frequency electric power between the mounting table and electrod assembly；With
For to the exhaust gear being vacuum-evacuated in process container.
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| Application Number | Priority Date | Filing Date | Title |
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| JP2016253152A JP6984126B2 (en) | 2016-12-27 | 2016-12-27 | Manufacturing method of gas supply device, plasma processing device and gas supply device |
| JP2016-253152 | 2016-12-27 |
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| JP (1) | JP6984126B2 (en) |
| KR (1) | KR102085409B1 (en) |
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| JP7159074B2 (en) * | 2019-02-08 | 2022-10-24 | キオクシア株式会社 | GAS SUPPLY MEMBER, PLASMA PROCESSING APPARATUS, AND COATING FILM FORMATION METHOD |
| US11749507B2 (en) | 2021-04-21 | 2023-09-05 | Toto Ltd. | Semiconductor manufacturing apparatus member and semiconductor manufacturing apparatus |
| JP7197036B2 (en) * | 2021-04-21 | 2022-12-27 | Toto株式会社 | Components for semiconductor manufacturing equipment and semiconductor manufacturing equipment |
| JP7409536B1 (en) | 2023-02-22 | 2024-01-09 | Toto株式会社 | Electrostatic chuck and its manufacturing method |
| JP7409535B1 (en) | 2023-02-22 | 2024-01-09 | Toto株式会社 | Electrostatic chuck and its manufacturing method |
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| TW201836439A (en) | 2018-10-01 |
| KR102085409B1 (en) | 2020-03-05 |
| JP6984126B2 (en) | 2021-12-17 |
| JP2018107313A (en) | 2018-07-05 |
| KR20180076325A (en) | 2018-07-05 |
| TWI763755B (en) | 2022-05-11 |
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