JP2009043919A - Plasma processing device, semiconductor manufacturing device, and manufacturing method of plate type product - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a low-cost plasma processing device capable of suppressing abnormal discharge and reducing production of particles, a semiconductor manufacturing device using the same, and a manufacturing method of a plate type product. <P>SOLUTION: The plasma processing device which has a chamber and generates plasma of gas introduced in the chamber to perform plasma processing on a semiconductor wafer (an object to be processed) installed in the chamber is characterized in that a connection portion between an upper member 2 and a side wall member 3 provided above and peripherally outside the chamber is formed in a curved shape having its center of curvature set inside the chamber. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a plasma processing apparatus for performing plasma processing on an object to be processed such as a semiconductor substrate or a glass substrate, a semiconductor manufacturing apparatus using the same, and a method for manufacturing a plate-like product.

  In semiconductor devices such as semiconductor integrated circuit devices, the element pattern dimensions are becoming finer year by year, and particles adhering to the semiconductor substrate during the manufacturing process are becoming more and more serious as a factor that decreases the yield. In addition, as a cause of the generation of such particles, for example, when dry etching processing (plasma etching processing) is performed on a semiconductor substrate using a dry etching apparatus, a chamber due to abnormal discharge inside the chamber of the dry etching apparatus Examples include dust generation from the constituent members.

  Hereinafter, with reference to FIGS. 7 to 11, a conventional dry etching apparatus and a problem of particles caused by abnormal discharge in the conventional dry etching apparatus will be described in detail.

  First, a conventional dry etching apparatus will be described in detail with reference to FIGS.

  FIG. 7 is a view for explaining the structure of a main part of a conventional dry etching apparatus, and FIG. It is.

  Referring to FIG. 7, a conventional dry etching apparatus 50 includes a chamber 50C that is surrounded by an upper member 50a and a side wall member 50b and configured to be able to hold the inside in a vacuum state. The chamber 50C is provided with a lower electrode 50c and a focus ring 50d having a base 50d1 and a cylindrical portion 50d2 placed on the lower electrode 50c, and a semiconductor wafer h as an object to be processed. Is placed inside the cylindrical portion 50d2. In the conventional dry etching apparatus 50, a predetermined etching gas is introduced into the chamber 50C while keeping the inside of the chamber 50C in a vacuum, and further, high frequency power is applied to the semiconductor wafer h through the lower electrode 50c. Plasma is generated between the upper member 50a and the semiconductor wafer h, and a dry etching process is performed on the semiconductor wafer h.

  In this conventional dry etching apparatus 50, the etching gas is introduced into the chamber 50C at a pressure of about 50 mTorr. During the dry etching process, as shown by the arrow b in FIG. The etching gas introduced from near the center of the upper member 50a flows in the direction of the side wall member 50b and is exhausted below the chamber 50C along the side wall member 50b. Since the etching gas flows in this way, in the conventional dry etching apparatus 50, the etching gas is present in the vicinity of the corner Cr of the chamber 50C, for example, within a radius of 10 mm, which is the contact portion between the upper member 50a and the side wall member 50b. The retention was easy to occur. For this reason, in the conventional dry etching apparatus 50, the plasma density tends to increase locally at the corner Cr. Further, in the conventional dry etching apparatus 50, electric field concentration is likely to occur at the corner of the chamber 50C where the electric field concentrates, that is, the corner Cr formed by the upper member 50a and the side wall member 50b at a right angle, and the plasma density is increased. An abnormal discharge was likely to occur at the corner Cr. Further, in the conventional dry etching apparatus 50, when abnormal discharge occurs, the aluminum base material of the side wall member 50b is exposed, and the particles Pa adhere to the semiconductor wafer h (see FIG. 7).

  Next, the problem of the particle Pa in the conventional dry etching apparatus 50 will be specifically described with reference to FIGS. In the following description, the particle Pa attached on the semiconductor wafer h having the silicon oxide film deposited on the surface will be described as an example.

  FIG. 9 is a diagram for explaining a specific example of particles scattered on a semiconductor wafer when the conventional dry etching apparatus is used, and FIGS. 9A and 9B respectively show the shape of the particle and its elements. FIG. 9C and FIG. 9D are diagrams showing different particle shapes and elemental analysis results, respectively. FIG. 10 is a diagram for explaining the scattering distribution of particles on a semiconductor wafer when the conventional dry etching apparatus is used, and FIG. 11 is an example of the investigation result of the particle generation trend in the conventional dry etching apparatus. It is a graph which shows.

  In the conventional dry etching apparatus 50, for example, a spherical particle Pa1 having a diameter of about 0.3 μm indicated by “d1” in FIG. 9A or a long diameter indicated by “d2” in FIG. Oval particles Pa2 of about 0 μm are generated by the abnormal discharge and adhere on the silicon oxide film of the semiconductor wafer h. These particles Pa1 and Pa2 are obtained by drawing a captured image of a scanning electron microscope (Scanning Electron Microscope).

  Further, in the particles Pa1 and Pa2, as shown in FIG. 9B and FIG. 9D, which are the results of analysis by an energy dispersive X-ray spectrometer, both are “Si”. ”,“ O ”, and“ Al ”are detected. Among these detection elements, “Si” and “O” are elements derived from the semiconductor wafer h, and “Al” is considered to be a component of the particle itself derived from the composition of the side wall member 50b.

  Further, in the conventional dry etching apparatus 50, the particle Pa does not scatter uniformly on the semiconductor wafer h, and an area that is likely to adhere due to the influence of the focus ring 50d or the like and an area that is difficult to adhere to are included in the semiconductor wafer h. Produced above. That is, when the surface of the semiconductor wafer h is inspected by the optical defect inspection apparatus after the plasma etching process is performed on the semiconductor wafer h by the conventional dry etching apparatus 50, for example, as shown in FIG. At m, there were few scattered particles Pa. Further, the particles Pa are concentrated in a region close to the crescent-shaped region m, and the particles Pa tend to decrease as the distance increases. This is because, in the conventional dry etching apparatus 50 shown in FIG. 7, when an abnormal discharge occurs in the corner Cr of the chamber 50C and the particle Pa is emitted from the corner Cr, the shadowed portion of the focus ring 50d. It is considered that this is because the particles Pa are less likely to adhere and are more likely to adhere to the other portions.

  More specifically, in the conventional dry etching apparatus 50, the particles Pa are scattered and attached from the corner Cr onto the semiconductor wafer h, as indicated by the one-dot chain line arrow in FIG. At this time, the scattering distance of the particles Pa is the height dimension from the surface of the semiconductor wafer h to the tip of the cylindrical portion 50d2 (shown by “H1” in FIG. 7) and the height from the surface to the corner Cr. The minimum scattering distance is substantially defined by the dimension (indicated by “H2” in FIG. 7), and the minimum scattering distance is the distance from the inner surface of the cylindrical portion 50d2 indicated by “L1” and “L2” in FIG. It is a distance dimension from. In other words, the separation dimension L1 is substantially equal to the maximum distance from the outer periphery in the crescent-shaped region m shown in FIG. 10 to the location closest to the center of the semiconductor wafer h, and the particle Pa is shown in FIG. As shown, if there is no influence of the etching gas or the like, it passes over the cylindrical portion 50d2, scatters to the outer region of the crescent-shaped region m, and adheres on the semiconductor wafer h. Note that specific dimensions of the height dimensions H1 and H2 and the separation dimensions L1 and L2 are 37 mm, 83 mm, 39 mm, and 87 mm.

  Further, as shown by a curve 60 in FIG. 11, when abnormal discharge as described above occurs, the number of particles varies greatly from day to day, and in the conventional dry etching apparatus 50, the manufacturing yield of the semiconductor device becomes unstable. . The number of particles on the vertical axis indicates the number of particles Pa having a particle diameter of 0.2 μm or more adhered per semiconductor wafer.

Therefore, it has been proposed that a conventional dry etching apparatus is provided with a yttria (Y ₂ O ₃ ) film having high plasma resistance on the surface of a side wall member or the like, as described in, for example, Patent Document 1 below. . That is, in this conventional dry etching apparatus, by coating the inner wall of the chamber with the yttria film, surface degradation of the inner wall of the chamber due to plasma discharge can be suppressed, and generation of particles can be reduced.
JP 2005-60827 A

  However, since the conventional dry etching apparatus (plasma processing apparatus) as described above uses a rare element such as yttrium (Y), there has been a problem that the apparatus cost is remarkably increased. Therefore, in the conventional plasma processing apparatus, it has been difficult to reduce the generation of particles by suppressing the occurrence of abnormal discharge and to reduce the cost of the apparatus.

  In view of the above problems, the present invention can suppress the occurrence of abnormal discharge and can reduce the generation of particles, a low-cost plasma processing apparatus, a semiconductor manufacturing apparatus using the same, and a plate-like product It aims at providing the manufacturing method of.

In order to achieve the above object, a plasma processing apparatus according to the present invention has a chamber, generates plasma of a gas introduced into the chamber, and applies it to an object to be processed installed in the chamber. On the other hand, a plasma processing apparatus for performing plasma processing,
An upper member and a side wall member provided above and outside the chamber, respectively,
The shape of the joint between the upper member and the side wall member is formed in a curved shape in which the center of curvature is set inside or outside the chamber.

  In the plasma processing apparatus configured as described above, the shape of the joint is formed in a curved shape in which the center of curvature is set inside or outside the chamber. It is possible to prevent the gas from staying and to prevent the electric field from being concentrated. As a result, unlike the conventional example, the occurrence of abnormal discharge can be suppressed and the generation of particles can be reduced while preventing an increase in apparatus cost. Therefore, an inexpensive plasma processing apparatus can be configured.

  Further, in the plasma processing apparatus, in the side wall member, the shape of the joined portion joined to the upper member is a curve having a curvature radius of 5 mm to 20 mm with a center of curvature being set inside the chamber. It is preferable that it is formed in a shape.

  In this case, plasma processing that can reliably prevent the occurrence of gas stagnation and electric field concentration in the above-mentioned joint, suppress the occurrence of abnormal discharge, and reliably reduce the generation of particles. A device can be configured.

  Further, in the plasma processing apparatus, in the upper member, the shape of the joined portion joined to the side wall member is a curve having a curvature radius of 5 mm to 20 mm with a center of curvature being set inside the chamber. It is preferable that it is formed in a shape.

  In this case, plasma processing that can reliably prevent the occurrence of gas stagnation and electric field concentration in the above-mentioned joint, suppress the occurrence of abnormal discharge, and reliably reduce the generation of particles. A device can be configured.

  In the plasma processing apparatus, the side wall member may be made of a material having aluminum as a base material and an aluminum oxide film formed on the inner surface of the chamber.

  In this case, an inexpensive plasma processing apparatus can be configured more reliably and easily.

  The semiconductor manufacturing apparatus of the present invention is characterized in that plasma processing is performed on a semiconductor substrate using any of the plasma processing apparatuses described above.

  In the semiconductor manufacturing apparatus configured as described above, the generation of abnormal discharge can be suppressed, and an inexpensive plasma processing apparatus that can reduce the generation of particles is used. Therefore, the apparatus cost can be easily reduced. In addition, a semiconductor manufacturing apparatus that can easily improve the manufacturing yield of a semiconductor device using a semiconductor substrate can be configured.

The plate-shaped product manufacturing method of the present invention is a plate-shaped product manufacturing method including a plasma processing step of performing plasma processing by placing an object to be processed inside a chamber,
The plasma processing step is performed using any of the plasma processing apparatuses described above.

  In the plate-shaped product manufacturing method configured as described above, the plasma processing step can be performed using a low-cost plasma processing apparatus that can suppress the occurrence of abnormal discharge and reduce the generation of particles. Therefore, the production yield of the plate-like product can be easily improved.

  Moreover, in the manufacturing method of the said plate-shaped product, it is preferable to form a gate electrode with respect to a to-be-processed object by performing the said plasma treatment process.

  In this case, the high-definition gate electrode forming process can be easily performed with high accuracy.

  According to the present invention, an inexpensive plasma processing apparatus capable of suppressing the occurrence of abnormal discharge and reducing the generation of particles, a semiconductor manufacturing apparatus using the plasma processing apparatus, and a method for manufacturing a plate-like product are provided. It becomes possible to provide.

  Hereinafter, preferred embodiments showing a plasma processing apparatus, a semiconductor manufacturing apparatus, and a plate-shaped product manufacturing method of the present invention will be described with reference to the drawings. In the following description, the present invention is applied to a parallel plate RIE (Reactive Ion Etching) type dry etching apparatus that performs a dry etching process on a semiconductor wafer in order to facilitate comparison with the conventional example. An example will be described. Moreover, the dimension of the structural member in each figure does not faithfully represent the actual dimension of the structural member, the dimensional ratio of each structural member, or the like.

[First Embodiment]
FIG. 1 is a diagram for explaining a main configuration of a dry etching apparatus according to the first embodiment of the present invention. In the figure, a dry etching apparatus 1 according to the present embodiment includes a chamber 1C configured to be depressurized, and an upper member 2 and a side wall member 3 provided above and outside the outer periphery of the chamber 1C so as to surround the chamber 1C. And. The dry etching apparatus 1 also includes a lower electrode 4 provided inside the chamber 1C, and a focus ring 5 having a base portion 5a and a cylindrical portion 5b placed on the lower electrode 4, A predetermined dry etching process as a plasma process is performed on the semiconductor wafer H in a state where the semiconductor wafer H as an object is placed inside the cylindrical portion 5b. The dry etching apparatus 1 is used in a semiconductor manufacturing apparatus for manufacturing a semiconductor device such as a semiconductor integrated circuit from a semiconductor wafer H.

  The dry etching apparatus 1 is appropriately supplied with a plurality of kinds of process gases such as an etching gas used for the dry etching process from a gas supply apparatus (primary side) 6. Specifically, between the dry etching apparatus 1 and the gas supply apparatus 6, a gas introduction pipe 8 a connected to a gas introduction path provided inside the dry etching apparatus 1 and a thin tube installed for each process gas. A dry etching apparatus 1 is provided with a gas pipe 8 having a gas pipe 8 having 8b, a mass flow controller 9 and a valve 10 installed in the middle of the thin pipe 8b in a corresponding process gas unit. The process gas corresponding to the processing content in is controlled by the corresponding mass flow controller 9 and then supplied into the chamber 1C.

  Further, the dry etching apparatus 1 is configured so that the process gas is uniformly introduced into the chamber 1C by a gas supply unit provided on the upper member 2 side. Specifically, the upper member 2 is provided with an upper lid 2a as an upper electrode, and a quartz top plate 2b made of quartz, which is installed on the chamber 1C side of the upper lid 2a. The quartz top plate 2b is provided with a gas introduction chamber 2b1 connected to the gas introduction path, and a plurality of gas introduction ports 2b2 having one end and the other end connected to the gas introduction chamber 2b1 and the chamber 1C, respectively. The process gas is uniformly supplied into the chamber 1C through a plurality of gas inlets 2b2.

  Further, in the dry etching apparatus 1, a pressure regulating valve 11 is installed at the lower part of the chamber 1C, and a turbo molecular pump 12 is connected to the downstream side thereof. In the dry etching apparatus 1, the exhaust amount is adjusted by adjusting the opening degree of the pressure adjustment valve 11, and the pressure (degree of vacuum) inside the chamber 1 </ b> C can be set to a predetermined value.

  Further, in the dry etching apparatus 1, plasma of a process gas introduced into the chamber 1 </ b> C is generated by applying a high frequency of 13.56 MHz, for example, from a high frequency power source (not shown) to the lower electrode 4 and is discharged.

  Next, with reference to FIG.2 and FIG.3, the junction part of the upper member 2 and the side wall member 3 is demonstrated concretely.

  2 is an enlarged plan view showing a joint portion between the upper member and the side wall member shown in FIG. 1, and FIG. 3 is a view for explaining a gas flow in the vicinity of the joint portion shown in FIG.

As shown in FIG. 2, in the dry etching apparatus 1 of this embodiment, as shown in FIG. 2, the joint between the upper member 2 and the side wall member 3 protrudes toward the outside of the chamber 1C and has a roundness. Further, the center of curvature is formed in a curved shape set inside the chamber 1C. Specifically, the side wall member 3 is formed by an aluminum base material 3a having aluminum as a base material and an alumite film 3b which is an aluminum oxide film and is formed on the inner surface of the chamber of the aluminum base material 3a. It is configured. Moreover, in the side wall member 3, the shape of the joint part 3b1 joined to the upper member 2 is formed in a curved shape having a curvature radius of 5 mm to 20 mm, with the center of curvature being set inside the chamber 1C. Yes. The upper lid 2a of the upper member 2 is made of a material mainly made of aluminum, and the upper lid and the side wall member 3 are grounded. On the other hand, the upper member 2 employs a quartz top plate 2b using SiO ₂ on the chamber 1C side, thereby avoiding metal contamination from chamber internal components such as the upper lid 2a mainly composed of aluminum and the side wall member 3. This is because the plasma resistance is high in the dry etching process.

  Furthermore, in the dry etching apparatus 1 of the present embodiment, as shown in FIG. 2, since the joint between the upper member 2 and the side wall member 3, that is, the corner of the chamber 1C is configured in a round shape, the dry etching process is performed. At this time, the process gas (etching gas) flows smoothly along the quartz top plate 2b and the alumite film 3b without staying in the corner as shown by an arrow B in FIG. . Thereby, in the dry etching apparatus 1 of this embodiment, uniform plasma can be generated inside the chamber 1C. Moreover, in the dry etching apparatus 1 of the present embodiment, the reaction product adheres relatively stably to the bonding portion 3b1 in combination with the point that the bonding portion 3b1 constituting the corner is covered with the alumite film 3b. It becomes possible and it can prevent that an electric field concentrates on the junction part 3b1.

  Here, the operation of the dry etching apparatus 1 of the present embodiment configured as described above will be specifically described with reference to FIG.

  FIG. 4 is a manufacturing process diagram illustrating a process of forming a gate electrode using the dry etching apparatus, and FIGS. 4A and 4B are semiconductors before and after the gate electrode is formed, respectively. It is a figure which shows the state of a wafer.

  4A, a gate insulating film g1 made of a silicon oxide film is formed on the semiconductor wafer H, and a polysilicon film g2 is formed on the gate insulating film g1. Then, a gate electrode of a transistor having a predetermined shape is formed on the intermediate product by using the dry etching apparatus of this embodiment. Specifically, for example, chlorine, hydrogen bromide, oxygen, and helium are introduced into the chamber 1C as process gases, and the internal pressure of the chamber 1C is controlled to 5 to 100 mTorr. Then, by applying a high frequency of 13.56 MHz to the lower electrode 4 to generate plasma, as shown in FIG. 4B, the gate insulating film g1 and the polysilicon film g2 are etched into a predetermined shape, A gate electrode of the transistor using the polysilicon film g2 is formed. In this gate electrode, the gate length is, for example, 100 nm, and the distance between adjacent gate electrodes is, for example, about 0.15 to 0.25 μm. Such a gate interval is very small, and a gate electrode with a fine dimension can be easily formed.

  In addition to the above description, the dry etching apparatus 1 of this embodiment includes, for example, an element isolation dry etching process, a transistor formation dry etching process, a contact hole dry etching process, and a metal wiring dry process in a semiconductor manufacturing process. It can be used for the etching process.

  In the dry etching apparatus 1 of the present embodiment configured as described above, the joint between the upper member 2 and the side wall member 3 is formed in a curved shape with the center of curvature set inside the chamber, and a dry etching process ( When the plasma treatment is performed, it is possible to prevent the etching gas (plasma gas) from staying in the joint portion and to prevent the electric field from being concentrated. Thereby, in the dry etching apparatus 1 of the present embodiment, unlike the conventional example, the occurrence of abnormal discharge can be suppressed and the generation of particles can be reduced while preventing an increase in apparatus cost. Therefore, a low-cost dry etching apparatus (plasma processing apparatus) 1 can be configured.

  Further, in the dry etching apparatus 1 of the present embodiment, the shape of the bonding portion 3b1 of the side wall member 3 to be bonded to the upper member 2 is such that the center of curvature is set inside the chamber 1C and at least 5 mm to 20 mm. It is formed in a curved shape having a radius of curvature. This makes it possible to reliably prevent the occurrence of gas stagnation and electric field concentration at the junction, and suppress the occurrence of abnormal discharge and reliably reduce the generation of particles. The apparatus 1 can be configured.

  Here, an example of a test result of the verification test of the present inventors will be specifically described with reference to FIG.

  FIG. 5 is a graph showing an example of a survey result of particle generation trends in the dry etching apparatus. The number of particles on the vertical axis indicates the number of particles having a particle diameter of 0.2 μm or more attached per semiconductor wafer.

  In the dry etching apparatus 1 of the present embodiment, the number of particles adhering to the semiconductor wafer is very small and stable as shown by the curve 30 in FIG. 5 compared to the conventional product shown in the curve 60 in FIG. It was proved that

Moreover, in the dry etching apparatus 1 of this embodiment, since the side wall member 3 is comprised using the aluminum base material 3a and the alumite film | membrane 3b, the dry etching apparatus 1 with low cost can be made more reliably and easily. Can be configured. That is, in the dry etching apparatus 1 of the present embodiment, unlike the conventional example described in Patent Document 1 using a yttria (Y ₂ O ₃ ) film containing a rare element yttrium (Y), as a sidewall member of the chamber 1C. Since a member having a structure of an aluminum base material / alumina coat that is widely used and low in cost is used, the cost of the dry etching apparatus 1 can be reduced more reliably and easily. it can.

[Second Embodiment]
FIG. 6 is an enlarged plan view showing a joint portion between the upper member and the side wall member in the dry etching apparatus according to the second embodiment of the present invention. In the figure, the main difference between this embodiment and the first embodiment is that a curved joint portion is provided on the upper member side. In addition, about the element which is common in the said 1st Embodiment, the same code | symbol is attached | subjected and the duplicate description is abbreviate | omitted.

  That is, as shown in FIG. 6, in the dry etching apparatus 1 of the present embodiment, the shape of the joining portion 2b1 joined to the side wall member 3 in the quartz top plate 2b of the upper member 2 is the center of curvature inside the chamber 1C. Is set, and is formed in a curved shape having a radius of curvature of 5 mm to 20 mm. Thereby, in the dry etching apparatus 1 of this embodiment, there can exist an effect similar to 1st Embodiment.

  Moreover, in the dry etching apparatus 1 of this embodiment, as shown in FIG. 6, since the side wall member 3 is configured to be flat, the occurrence of abnormal discharge can be further prevented as compared with the first embodiment. . Further, since the junction (corner) is provided on the quartz top plate 2b side that is difficult to be sputtered even if abnormal discharge occurs, the etching gas is less likely to stay and uniform plasma, as in the first embodiment. And the reaction product can be deposited relatively stably. Thus, in the dry etching apparatus 1 of the present embodiment, abnormal discharge is unlikely to occur at a corner, and particle generation from this corner can be significantly reduced as compared to the first embodiment.

  The above embodiments are all illustrative and not restrictive. The technical scope of the present invention is defined by the claims, and all modifications within the scope equivalent to the configurations described therein are also included in the technical scope of the present invention.

  For example, in the above description, the case where the present invention is applied to a parallel plate RIE type dry etching apparatus that performs dry etching processing on a semiconductor wafer has been described. However, the present invention is provided above and outside the chamber, respectively. As long as the shape of the joint between the upper member and the side wall member is a curved shape whose center of curvature is set inside or outside the chamber. The present invention can be applied to various plasma processing apparatuses that generate plasma of gas introduced into the chamber and perform plasma processing on an object to be processed installed in the chamber. That is, contrary to the above-described embodiments, it is also possible to use a joint formed in a curved shape so that the center of curvature is set outside the chamber and bulges toward the inside of the chamber and has a round shape. . Further, the object to be processed is not limited to a semiconductor wafer, and may be a plate-like product such as a glass substrate used for a liquid crystal display device or a PDP.

  In the above description, the dry etching apparatus having a chamber capable of depressurization has been described. However, the present invention is not limited to this, and plasma under atmospheric pressure such as a surface cleaning process or a surface modification process. The present invention can also be applied to a plasma processing apparatus that performs processing.

  In each of the above embodiments, the case where the curved joint portion is provided on one of the upper member and the side wall member has been described. However, the curved joint portion is provided on both the upper member and the side wall member. When the upper member and the side wall member are integrated, a curved joint as described above may be configured.

  The present invention is directed to a low-cost plasma processing apparatus capable of suppressing the occurrence of abnormal discharge and reducing the generation of particles, a semiconductor manufacturing apparatus using the plasma processing apparatus, and a method for manufacturing a plate-like product. Useful.

It is a figure explaining the principal part structure of the dry etching apparatus concerning the 1st Embodiment of this invention. It is an enlarged plan view which shows the junction part of the upper member and side wall member which were shown in FIG. It is a figure explaining the flow of the gas in the vicinity of the junction part shown in FIG. It is a manufacturing process figure which shows the process of forming a gate electrode using the said dry etching apparatus, (a) And (b) is a figure which shows the state of a semiconductor wafer before and after a gate electrode is formed, respectively. is there. It is a graph which shows an example of the investigation result of the generation | occurrence | production trend of the particle | grains in the said dry etching apparatus. It is an enlarged plan view which shows the junction part of an upper member and a side wall member in the dry etching apparatus concerning the 2nd Embodiment of this invention. It is a figure explaining the principal part structure of the conventional dry etching apparatus. It is a figure explaining the gas flow in the vicinity of the junction part of the upper member and side wall member in the said conventional dry etching apparatus. It is a figure explaining the specific example of the particle scattered on the semiconductor wafer when the said conventional dry etching apparatus is used, (a) And (b) is a figure which shows the shape of a particle, and its elemental-analysis result, respectively. , (C) and (d) are diagrams showing the shapes of different particles and their elemental analysis results, respectively. It is a figure explaining the scattering distribution of the particle on a semiconductor wafer at the time of using the said conventional dry etching apparatus. It is a graph which shows an example of the investigation result of the generation | occurrence | production trend of the particle | grains in the said conventional dry etching apparatus.

Explanation of symbols

1 Dry etching equipment (plasma processing equipment)
1C Chamber 2 Upper member 2b1 Joined portion 3 Side wall member 3b1 Joined portion H Semiconductor wafer (object to be processed)
g2 Gate electrode

Claims (7)

A plasma processing apparatus having a chamber, generating plasma of a gas introduced into the chamber, and performing plasma processing on an object to be processed installed in the chamber;
An upper member and a side wall member provided above and outside the chamber, respectively,
The shape of the joint portion between the upper member and the side wall member is formed in a curved shape in which the center of curvature is set inside or outside the chamber,
A plasma processing apparatus. In the side wall member, a shape of a joining portion joined to the upper member is formed in a curved shape having a curvature center in the chamber and a curvature radius of 5 mm to 20 mm. 2. The plasma processing apparatus according to 1. The said upper member WHEREIN: The shape of the junction part joined to the said side wall member is formed in the curved shape which has a curvature radius of 5 mm-20 mm while setting the center of curvature inside the said chamber. 2. The plasma processing apparatus according to 1. The plasma processing according to any one of claims 1 to 3, wherein the side wall member is made of a material having aluminum as a base material and an aluminum oxide film formed on an inner surface of the chamber. apparatus. The semiconductor manufacturing apparatus which performs a plasma process with respect to a semiconductor substrate using the plasma processing apparatus of any one of Claims 1-4. A plate-shaped product manufacturing method including a plasma processing step of performing plasma processing by placing an object to be processed inside a chamber,
The said plasma processing process is performed using the plasma processing apparatus of any one of Claims 1-4, The manufacturing method of the plate-shaped product characterized by the above-mentioned. The manufacturing method of the plate-shaped product of Claim 6 which forms a gate electrode with respect to a to-be-processed object by performing the said plasma treatment process.

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