JP2018098329A - Laser irradiation device, wafer ring fixing device, and electronic part transport device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a laser irradiation device capable of peeling an electronic part from a wafer sheet without scratching or breakage of an electronic part, a wafer ring fixing device including the same, and an electronic part transfer device including the wafer ring fixing device.SOLUTION: A laser irradiation device 134 included in a wafer ring fixing device included in an electronic part transport device includes an optical axis directed toward an electronic part D, and a laser injection unit 135 that emits a laser beam 134a toward a wafer sheet 16 opposite to the surface to which the electronic part D is adhered. The laser irradiation device 134 also includes a sheet support plate 136 having a laser irradiation hole 136a which is coaxial with the optical axis of the laser beam 134a and has a diameter smaller than that of the laser beam 134a. The wafer sheet is heated in an inner region of the laser beam 134a and the electronic part is peeled off from the wafer sheet by direct heating to a bonding area of the electronic part and heat transfer to the entire bonding area of the electronic part via the sheet support plate.SELECTED DRAWING: Figure 5

Description

  The present invention relates to a laser irradiation device for peeling an electronic component from a wafer sheet, a wafer ring fixing device including the laser irradiation device, and an electronic component transporting device including the wafer ring fixing device.

  The electronic components are subjected to processing such as quality confirmation and packaging in a later process. For example, the quality of an electronic component is confirmed by an electrical characteristic measurement, an appearance inspection, or a light amount inspection in a later process. Electronic components are engraved with laser marking, classified according to quality, and packed in various containers. These processes are performed on the transport path. In addition, the electronic components are not subjected to any special treatment in order to replace the container and repack it to correspond to the type of container used in the next process equipment or to meet the customer's request. In some cases, it is transported along the transport path.

  Electronic components are attached to the wafer sheet in an array. An apparatus called a wafer ring holder peels electronic components in order from the wafer sheet in order to align and convey the electronic components along the conveyance path (see, for example, Patent Document 1). This wafer ring holder is provided with a ring moving mechanism. The ring moving mechanism moves the wafer ring in a plane along the sheet plane, and sequentially places each electronic component on the scheduled pickup. A wafer ring is a wafer sheet stretched by a ring. For example, the ring moving mechanism has two-dimensional rails that are attached to a ring holding unit that holds a wafer ring and orthogonal to each other, and slides the ring holding unit by a drive source such as a motor.

  Further, the wafer ring holder includes push-up pins. The push-up pin is arranged toward a planned position for picking up the electronic component. The push-up pin advances so as to push up the electronic component at the planned pickup position from the wafer sheet side at the pin tip. The pin tip is sufficiently thin with respect to the electronic component, and the electronic component is pushed up at one point. The wafer sheet extends in a conical shape with the point where the electronic component is pushed up as a vertex. That is, the electronic component deviates from the wafer sheet except for one point pushed up. The holding means such as a suction nozzle holds the electronic component while being substantially peeled from the wafer sheet, and is separated from the wafer ring holder so that the electronic component is completely peeled from the wafer sheet and transferred to the conveyance path.

Japanese Patent Laid-Open No. 11-045906

  In recent years, the thickness of electronic components has been reduced. If a thin electronic component is pushed up with a very fine push-up pin, the electronic component may be damaged, and in the worst case, the electronic component may be broken. In addition, a state in which a thin electronic component is sandwiched between the push-up pin and the holding means temporarily occurs. Due to this clamping, a load is applied to the electronic component, and the electronic component may be broken. As a countermeasure, the advancing speed of the push-up pin has to be reduced, and the approaching speed of the holding means has to be reduced, so that the production speed of the electronic component is lowered. If this countermeasure is not taken, there will be a problem in yield.

  There is an electronic component in which electrodes are arranged on both sides such as a bump electrode. If the electronic component of the double-sided electrode is pushed up by the push-up pin, the push-up pin hits the electrode, and if the electronic component of the double-sided electrode is held between the push-up pin and the holding means, the electrode may be damaged and contact failure may occur. For this reason, even with respect to the electronic component of the double-sided electrode, the advancing speed of the push-up pin has to be reduced, and the approaching speed of the holding means has to be reduced, so that the production rate of the electronic component is reduced. After all, if this measure is not taken, there will be a problem in yield.

  The present invention has been proposed to solve the above-described problems, and a laser irradiation apparatus capable of peeling an electronic component from a wafer sheet without scratching or damaging the electronic component. It is an object of the present invention to provide a wafer ring fixing device provided and an electronic component transfer device provided with the wafer ring fixing device.

  The laser irradiation apparatus according to the present invention is a laser irradiation apparatus for peeling an electronic component from a wafer sheet formed by adhering an electronic component to one side of a heat-peelable pressure-sensitive adhesive sheet, and has an optical axis directed to the electronic component. And a laser emitting portion for emitting a laser toward the wafer sheet from the surface opposite to the surface on which the electronic component is attached, and laser irradiation that is coaxial with the optical axis of the laser and smaller in diameter than the laser. A plate having a hole, and an outer peripheral ring-shaped region of the laser light irradiated on the plate heats the plate, and the heat of the plate spreads in the plate, and the heat spread on the plate It is transmitted to the entire attachment area of the electronic component of the sheet, and the attachment area of the electronic component of the wafer sheet is heated through the plate and passes through the laser irradiation hole. Direct heating with the wafer sheets according to the inner region of the laser light, thereby peeling the electronic part from the wafer sheet, characterized by.

  The plate may be made of a material having high thermal conductivity that easily absorbs laser energy. For example, the plate may comprise silicon, iron, aluminum, tin, alloys thereof, or metal compounds thereof.

  It further includes an axis alignment frame that coaxially supports the laser emitting portion and the plate, the plate being detachable from the axis alignment frame, coaxial with the optical axis of the laser beam, and the diameter of the laser beam A laser irradiation hole having a smaller diameter than that of the corresponding electronic component, and a part of the laser light emitted by the laser emitting unit is emitted toward the wafer sheet and the electronic component. You may do it.

  The apparatus further comprises an axis alignment frame that coaxially supports the laser emitting portion and the plate, and the wafer sheet is moved in parallel along the sheet plane so that electronic components are sequentially positioned on the optical axis of the laser emitting portion. The axis alignment frame may be extended and contracted, and may be reduced until the plate moves away from the wafer sheet during movement of the wafer sheet.

  The plate has a size including an electronic component to be peeled located on the optical axis of the laser emitting portion and an electronic component around the electronic component, and a central plate including only the electronic component to be peeled And an annular plate that covers the periphery of the central plate, and a groove that disconnects between the central plate and the annular plate. The plate may further include a heat insulating material filled in the groove.

  The central plate may be made of a material having high thermal conductivity that easily absorbs laser energy, and the annular plate may be made of a heat insulating material. For example, the central plate may include silicon, iron, aluminum, tin, alloys thereof, or metal compounds thereof, and the annular plate may include urethane, glass fiber sheet laminate, or zirconia. Also good.

  A cooling means for cooling the plate may be further provided. For example, the cooling means may be a suction port that penetrates the plate and sucks the wafer sheet. The suction port may be provided under the other electronic components arranged around the electronic component to be picked up so as to have a negative pressure through which air flows through the wafer sheet.

  The laser emitting unit may intersect a plurality of lasers in the wafer sheet. For example, each of the beam splitters arranged on the optical axis of the laser emitting portion and for dividing the lasers and the lasers divided by the beam splitters to reflect the lasers so as to intersect within the wafer sheet. And a mirror. Further, for example, a plurality of the laser emitting units that emit laser light from a plurality of directions with respect to one point in the wafer sheet may be provided.

  Further, the wafer ring fixing device according to the present invention includes the laser irradiation device, a ring holding unit that holds the ring on which the wafer sheet is stretched, and the ring holding unit that is translated along the sheet plane of the wafer sheet. And a ring moving means for sequentially positioning the electronic components on the optical axis of the laser emitting portion.

  An electronic component transport apparatus according to the present invention includes the wafer ring fixing device, a holding unit that receives and holds the electronic component from the wafer ring fixing device, and a transfer path that transfers the electronic component received by the holding unit. A storage unit that is disposed on the transfer path and holds a receiving body that stores electronic components that have traveled around the transfer path, and the holding portion has a tip that makes contact with the electronic component and has heat resistance and high thermal conductivity. It is characterized by comprising a sex member.

  An electronic component transport apparatus according to the present invention includes the wafer ring fixing device, a holding unit that receives and holds the electronic component from the wafer ring fixing device, and a transfer path that transfers the electronic component received by the holding unit. An accommodation unit that is disposed on the conveyance path and holds a container that accommodates an electronic component that has traveled around the conveyance path, and the holding unit is arranged before the laser emission unit emits the laser light or It abuts on the electronic component from the middle of injection. The holding portion may be configured such that a tip that comes into contact with the electronic component is made of a heat-resistant and highly heat-conductive member.

  A processing unit that is disposed between the wafer ring fixing device and the housing unit in the transport path and that processes electronic components that travel around the transport path may be further provided.

  According to the present invention, the wafer sheet is irradiated with the laser through the laser irradiation hole while supporting the wafer sheet with the plate in which the laser irradiation hole smaller in diameter than the laser diameter is formed. The plate supporting the wafer sheet is also irradiated with the laser, and the wafer sheet and the plate are heated, so that the adhesive force of the entire attachment area of the electronic component can be lost via the plate, and the electronic component is emitted by the laser. Can be peeled off from the wafer sheet, and scratches and breakage due to contact of objects with electronic components can be prevented.

It is a top view of an electronic component conveying apparatus. It is a side view of an electronic component conveying apparatus. It is sectional drawing which shows the one aspect | mode of a wafer sheet. It is a perspective view of a wafer ring fixing device. It is side surface sectional drawing which shows the one aspect | mode of a wafer ring fixing device. It is a front view which shows the one aspect | mode of a sheet | seat support plate. It is each front view which shows various sheet | seat support plates. It is a side view which shows the detail of a laser irradiation apparatus. It is a figure which shows the state which supports a wafer sheet with a sheet | seat support plate. It is a figure which shows the laser which the laser irradiation apparatus inject | emitted. It is a figure which shows the movement of the heat | fever generate | occur | produced by absorption of laser energy. It is a figure which shows the sticking force loss and foaming of a wafer sheet. It is a figure which shows the state which the suction nozzle contact | abutted to the electronic component on a wafer sheet. It is a figure which shows the state of the laser irradiation apparatus during the movement of a wafer sheet. It is a front view which shows the 2nd shape of a sheet | seat support plate. It is a front view which shows the 3rd shape of a sheet | seat support plate. It is a figure which shows the laser which the laser irradiation apparatus which concerns on another aspect inject | emitted. It is a figure which shows the movement of the heat | fever generate | occur | produced with the laser irradiated to the sheet | seat support plate and the electronic component. In the laser irradiation apparatus which concerns on another aspect, it is a figure which shows the state which the suction nozzle contact | abutted to the electronic component on a wafer sheet. It is a side view which shows the other structure of a laser irradiation apparatus. It is a side view which shows the further another structure of a laser irradiation apparatus. It is a figure which shows the other state which the suction nozzle contact | abutted to the electronic component on a wafer sheet. It is sectional drawing which shows the other aspect of a wafer sheet.

  Hereinafter, each embodiment of the electronic component conveying apparatus 1 according to the present invention will be described in detail with reference to the drawings.

(First embodiment)
(Constitution)
As shown in FIG. 1 and FIG. 2, the electronic component transport apparatus 1 moves the electronic component D from the wafer sheet 16 to the transport path 1 a and applies the electronic component D along the transport path 1 a while performing various processes on the electronic component D. The electronic component D is returned to the other container 15a from the transport path 1a.

  The electronic component D is a component used for an electrical product. The electronic component D includes a semiconductor element, and the semiconductor element is a transistor, an LED, an integrated circuit, or the like, a resistor, a capacitor, or the like. There is no limitation on the type, shape, and size of the electronic component D. However, the electronic component D that should avoid mechanical damage on both sides is suitable for the electronic component transport apparatus 1. Examples of the electronic component D that should avoid mechanical damage on both sides include a product having a low load resistance due to its thin thickness and a product having electrodes on both sides.

  The processing content for the electronic component D is inspection, processing, posture correction, classification, or a combination thereof. The inspection content is an appearance inspection, an electrical characteristic inspection, a light quantity inspection, or the like. The processing content is bending of the lead terminal, laser marking, solder application, or the like. The posture correction is correction of the position, orientation, or both of the electronic component D. The classification is classified according to the rank of the non-defective product and the non-defective product or the non-defective product according to the inspection result.

  The electronic component transport apparatus 1 includes a handler 12, a wafer ring fixing device 13, a relay unit 14, a processing unit 11, and a storage unit 15. The handler 12 forms an annular conveyance path 1a, and sets a stop position 1b of the electronic component D on the conveyance path 1a at equal circumferential positions. The wafer ring fixing device 13 holds the wafer sheet 16 along a plane orthogonal to the transport path 1a. That is, the wafer ring fixing device 13 is placed vertically. The relay unit 14 is disposed immediately below the one stop position 1b, is interposed between the transfer path 1a and the wafer ring fixing device 13, picks up the electronic component D from the wafer sheet 16 at the lateral position, and is positioned directly above. The electronic component D is supplied to the transport path 1a.

  The processing unit 11 is distributed to each stop position 1b. The processing unit 11 is, for example, a camera unit that detects positional deviation, orientation deviation, or both of the electronic component D, an XY movement table or XYθ movement that corrects the positional deviation, orientation deviation, or both of the electronic component D. A table, an electrical test unit for inspecting the electrical characteristics of the electronic component D, a camera unit for inspecting the external appearance of the electronic component D, and a laser marking unit for marking the non-defective electronic component D as a result of the inspection.

  The accommodation unit 15 is disposed at a stop position 1b opposite to the stop position 1b where the relay unit 14 is disposed with the group of processing units 11 interposed therebetween. The housing unit 15 is a taping unit that travels a carrier tape, for example. Other examples of the accommodation unit 15 include a tray moving device that moves the tray in a plane, or a wafer ring holder that moves the wafer in a plane.

  In such an electronic component conveying apparatus 1, the handler 12 is attached to a turret table 121 that is a base of a rotating system, a direct drive motor 122 that is a rotational power source of the turret table 121, and a turret table 121. The suction nozzle 123 that holds the electronic component D and the advance / retreat drive device 124 that moves the suction nozzle 123 to and away from the wafer ring fixing device 13, the specific processing unit 11, and the storage unit 15. The specific processing unit 11 is, for example, an XY movement table, an XYθ movement table, an electrical test unit, and a laser marking unit.

  The turret table 121 has a star shape or a disk shape in which arms are arranged radially. The turret table 121 is pivotally supported by the rotation shaft of the direct drive motor 122 at the center of the circle. A plurality of suction nozzles 123 are attached to the outer peripheral edge equidistant from the center of the circle of the turret table 121 at equal circumferential positions. The suction nozzle 123 has a nozzle tip directly below the transport path 1a, and can be moved directly below the transport path 1a by being loosely fitted to a sleeve provided on the turret table 121. The suction nozzle 123 is supplied with a negative pressure and holds the electronic component D at the opened nozzle tip.

  The direct drive motor 122 rotates the rotation shaft intermittently by a fixed angle, and the turret table 121 rotates intermittently by a fixed angle in the circumferential direction. The interval between the suction nozzles 123 is equal to the rotation angle per pitch of the turret table 121 or is an integral multiple of this rotation angle. Therefore, each suction nozzle 123 stops at each stop position 1b where the group of the relay unit 14 and the wafer ring fixing device 13, the processing unit 11, and the accommodation unit 15 are arranged.

  The advancing / retreating drive device 124 is a pusher that is installed on the opposite side of the processing unit 11 with the transport path 1a interposed therebetween, and advances and retracts the rod. The advancing / retreating drive device 124 includes a stop position 1b where the relay unit 14 is installed, a stop position 1b where the processing unit 11 that needs to temporarily receive the electronic component D is arranged, and a stop position 1b where the accommodation unit 15 is installed. To be provided. The advance / retreat drive device 124 pushes the suction nozzle 123 with a rod, and advances the suction nozzle 123 to the relay unit 14, the processing unit 11, and the storage unit 15. As a result, the suction nozzle 123 picks up the electronic component D supplied to the transport path 1 a, transfers the electronic component D to and from the processing unit 11, and delivers the electronic component D to the storage unit 15.

  The relay unit 14 is also called a rotary pickup. The relay unit 14 includes a rotor 141 having arms arranged radially, a servo motor 142 that pivotally supports the radiation center of the rotor 141, a suction nozzle 143 attached to each arm of the rotor 141, and a true head toward the transport path 1a. An advancing / retreating drive device 145 is provided at an upper position and a lateral position facing the wafer ring fixing device 13.

  The rotor 141 expands the arm along a plane orthogonal to the transport path 1a. The suction nozzle 143 is attached to the tip of each arm of the rotor 141 with the nozzle tip facing outward in the radial direction of the rotor 141. The servo motor 142 is rotatably supported on the circle center of the rotor 141. The installation interval of the suction nozzle 143 is equal to the rotation angle per pitch of the rotor 141. Of the common stop positions 1b of the suction nozzles 143, one stop position 1b is directly above the conveyance path 1a, and the other one stop position 1b faces the wafer ring fixing device 13. Set beside.

  The advancing / retreating drive device 145 is installed at a stop position 1b directly above the conveyance path 1a and a stop position 1b directly beside the wafer ring fixing device 13. The advance / retreat drive 145 is a pusher that advances and retracts the rod and pushes out the suction nozzle 143. The suction nozzle 143 is installed on the rotor 141 via a rail along the arm of the rotor 141, and can slide on the rail. The advancing / retreating drive device 145 in the right lateral position pushes the suction nozzle 143 in the right lateral position with a rod, and the suction nozzle 143 in the right lateral position picks up the electronic component D toward the wafer ring fixing device 13. The advancing / retreating drive device 145 at the directly above position pushes out the suction nozzle 143 at the directly above position with a rod, and the suction nozzle 143 at the directly above position passes the electronic component D to the transport path 1a.

  The suction nozzle 143 has a hollow cylindrical shape to which a negative pressure is supplied as a main body. The nozzle tip of the suction nozzle 143, that is, the radially outer end of the rotor 141 is open. The tip of the nozzle is a substantially conical body with the apex at the tip and the apex cut off on a flat surface. The suction nozzle 143 approaching the wafer sheet 16 held by the wafer ring fixing device 13 is brought into close contact with the electronic component D on the flat surface at the tip of the nozzle by suction, and holds the electronic component D.

  The wafer ring fixing device 13 is arranged vertically next to the relay unit 14. That is, the wafer ring fixing device 13 is disposed so that the wafer sheet 16 is perpendicular to the transport path 1a. The wafer ring fixing device 13 moves the wafer sheet 16 two-dimensionally so that the electronic components D moved to the transport path 1a are sequentially opposed to the suction nozzle 143 that has reached the position just beside the relay unit 14. Note that the wafer ring fixing device 13 may be placed horizontally just below the relay unit 14 so that the wafer sheet 16 is parallel to the transport path 1a.

  The wafer ring fixing device 13 heats a bonding area of the electronic component D picked up by the relay unit 14 in the wafer sheet 16 in addition to the two-dimensional movement of the wafer sheet 16 as an element of the wafer ring holder. The adhesion area of the wafer sheet 16 loses the adhesion force to the electronic component D due to heating, and desirably foams due to heating to lift the electronic component D and bring the electronic component D closer to the relay unit 14.

  Here, the wafer sheet 16 is a sheet in which the diced electronic components D are attached in an array. The wafer sheet 16 is stretched by a ring and is in a state called a wafer ring. The wafer sheet 16 is a heat-peelable pressure-sensitive adhesive sheet, which loses its sticking force due to heat and desirably foams due to heat. As shown in FIG. 3, for example, the wafer sheet 16 has a two-layer structure of a base material 161 and an adhesive layer 162. The base material 161 serves as a support base for the adhesive layer 162 and is made of a plastic film, paper, cloth, nonwoven fabric, or the like, and is made of, for example, a polyester film. The pressure-sensitive adhesive layer 162 includes an adhesive 163 and a foam filler 164, and is formed by, for example, applying a slurry in which the adhesive 163 and the foam filler 164 are mixed to the base material 161.

  Examples of the adhesive 163 include a rubber-based pressure-sensitive adhesive, an acrylic-based pressure-sensitive adhesive, and a styrene-conjugated diene block copolymer-based pressure-sensitive adhesive. The foam filler 164 is formed by filling an elastic shell with a substance that expands by gasification by heat. Examples of the material that expands by gasification by heat include isobutane, propane, pentane and the like, and examples of the material of the shell having elasticity include vinylidene chloride-acrylonitrile copolymer, polyvinyl alcohol, polyvinyl butyral, polymethyl methacrylate, polyacrylo Examples include nitro, polyvinylidene chloride, and polysulfone. In this wafer sheet 16, the volume of the foam filler 164 expands due to heat, and the adhesive area with the electronic component D decreases, so that the adhesion force to the electronic component D is lost.

  Depending on the extent to which the suction nozzle 143 of the relay unit 14 advances, the function of lifting the electronic component D by foaming may be omitted from the wafer sheet 16. In this case, an adhesive having low heat resistance, or an adhesive that loses adhesive force due to gas such as steam generated by heat may be used as the adhesive layer. Examples of the adhesive 163 that loses the adhesive force by a gas such as steam generated by heat include polyvinyl alcohol, polyester, and polyvinyl pyrrolidone.

  A detailed configuration of the wafer ring fixing device 13 for losing the sticking property of the wafer sheet 16 is shown in FIGS. As shown in FIG. 4, the wafer ring fixing device 13 holds the wafer sheet 16 upright with respect to the transport path 1a, and moves the wafer sheet 16 in two axial directions that are parallel to the vertical plane and orthogonal to each other. Then, the electronic component D to be picked up is moved to a position just beside the relay unit 14. The wafer ring fixing device 13 includes a ring holding unit 131 into which the wafer sheet 16 is inserted, and a ring moving mechanism 133 that horizontally moves the ring holding unit 131 with respect to the spread of the wafer sheet 16.

  The ring holding unit 131 holds the wafer sheet 16 while stretching it. The ring holding part 131 includes two donut plates 131a and an expanding ring 131b extending in the vertical direction. The donut plate 131 a and the expand ring 131 b are coaxially arranged, and each opening includes the entire electronic component attaching region of the wafer sheet 16. The two donut plates 131 a are overlapped with a gap 132 corresponding to the thickness of the wafer sheet 16. The donut plate 131a has an inner diameter that is larger than the outer diameter of the expand ring 131b, and is movable in a direction in which the expand ring 131b is fitted.

  The wafer sheet 16 inserted into the gap portion 132 moves in a direction in which the donut plate 131a goes under the expand ring 131b, so that the donut plate has the edge of the expand ring 131b as a fulcrum between the donut plate 131a and the expand ring 131b. It is dragged into 131a and stretched. The wafer sheet 16 is stretched to suppress bending, and a dicing street that is a boundary between adjacent electronic components D is expanded.

  The ring moving mechanism 133 includes a support plate 133a that fixes the ring holding portion 131, and rails 133b and 133c fixed to the back surface of the support plate 133a. A hole including the entire wafer sheet 16 inserted into the ring holding part 131 is also provided at the center of the support plate 133a. The rail 133b extends in one axial direction parallel to the vertical plane, and the rail 133c extends in the second axial direction parallel to the vertical plane and orthogonal to the rail 133b. When the support plate 133a slides along the rails 133b and 133c, the ring holding part 131 fixed to the support plate 133a moves two-dimensionally along the vertical plane.

  The wafer ring fixing device 13 includes a fixed-point laser irradiation device 134 that directly and indirectly heats the wafer sheet 16. The laser irradiation device 134 heats the region where the electronic component D to be picked up is attached by the laser beam 134a to lose the attaching force, and causes the attaching region of the electronic component D to foam and float. The laser irradiation device 134 is installed at the center of the wafer ring fixing device 13 and is located immediately below the electronic component D to be picked up. In other words, the ring moving mechanism 133 moves the electronic component D to be picked up to the front of the laser irradiation device 134.

  As shown in FIG. 5, the laser irradiation device 134 includes a laser emission unit 135, a sheet support plate 136, and an axis alignment frame 137. The laser emission unit 135 is a gas laser such as a carbon dioxide gas or an excimer laser, a solid-state laser such as a YAG laser, or a semiconductor laser. The laser emission unit 135 irradiates a laser beam 134a having a predetermined wavelength. The predetermined wavelength is preferably a wavelength that is easily absorbed by the wafer sheet 16.

  The laser emission unit 135 may include a wavelength converter, if necessary, corresponding to the material of the wafer sheet 16 in order to achieve a predetermined transmittance. When the base material 161 of the wafer sheet 16 is a polyester film, the laser emission unit 135 may emit a laser beam 134a having a wavelength of less than 330 nm at which the transmittance of the wafer sheet 16 is 30% or less. When the base material 161 of the wafer sheet 16 is a polyester film, the laser emission unit 135 generates a laser having a wavelength of, for example, around 920 nm by a semiconductor laser, and a laser beam having a third harmonic by a wavelength converter using a nonlinear optical crystal, for example. 134a is injected.

  The sheet support plate 136 supports the wafer sheet 16 from the side opposite to the attachment surface of the electronic component D, removes the bending of the sheet from the region including the electronic component D to be picked up, and reinforces flattening. The sheet support plate 136 is a plate-like member having a flat wafer sheet 16 side.

  As shown in FIG. 6, the sheet support plate 136 includes a suction port 136b penetrating the plate-like member in a region excluding the center. A pneumatic circuit such as a tube that generates negative pressure is connected to the suction port 136b. The suction port 136b attracts the wafer sheet 16 to the sheet support plate 136 to further ensure the flattening of the sheet. Further, the suction port 136b is a cooling means that cools the sheet support plate 136 by allowing air to pass through the sheet support plate 136 when it is released without being blocked by the wafer sheet 16.

  As shown in FIG. 6, a laser irradiation hole 136 a is formed through the center of the sheet support plate 136. The diameter of the laser irradiation hole 136a is smaller than the electronic component D to be picked up. The diameter of the laser irradiation hole 136a is smaller than the laser diameter. The sheet support plate 136 narrows the diameter of the laser beam 134a within the range of the electronic component D to be picked up by the laser irradiation hole 136a.

  The sheet support plate 136 is heated by being irradiated with the outer ring-shaped region 134b of the laser beam 134a. That is, in the laser irradiation device 134, the wafer sheet 16 and the sheet support plate 136 are irradiated with the laser beam 134a, and the wafer sheet 16 is directly heated by the laser beam 134a, and the wafer sheet 16 is flattened and supported. The wafer sheet 16 is indirectly heated via Therefore, it is desirable that the sheet support plate 136 includes a material that easily absorbs laser energy and has high thermal conductivity. As a material that easily absorbs laser energy and has high thermal conductivity, silicon, iron, aluminum, tin, an alloy of iron, an alloy of aluminum, an alloy of tin, an iron metal compound, an aluminum metal compound, or These metal compounds, such as a metal compound of tin, can be mentioned.

  Further, as shown in FIG. 7, various types of sheet support plates 136 are prepared according to the size of the electronic component D. Each sheet support plate 136 has a laser irradiation hole 136a that has a different diameter of the laser irradiation hole 136a and fits in the corresponding electronic component D. The laser irradiation device 134 is replaced with a sheet support plate 136 having a laser irradiation hole 136a corresponding to the size of the electronic component D.

  The laser emission unit 135 and the sheet support plate 136 are connected by an axis alignment frame 137. The axis alignment frame 137 aligns the laser emission unit 135 and the sheet support plate 136 so that the laser beam 134a, the laser irradiation hole 136a, and the suction nozzle 143 in the lateral position provided in the relay unit 14 are coaxial. The axis alignment frame 137 is a cylindrical body having openings at both ends. The sheet support plate 136 is detachably fixed to the end on the relay unit 14 side, and is opposite to the surface on which the electronic component D of the wafer sheet 16 is adhered. The flat surface of the sheet support plate 136 is brought into close contact with the surface. The seat support plate 136 is bolted to the axis alignment frame 137, for example, and is detachable by loosening the bolt. The axis alignment frame 137 fixes the laser emission unit 135 to the end opposite to the sheet support plate 136.

  As shown in FIG. 8, the axis alignment frame 137 has a double-cylinder structure that can be expanded and contracted. The sheet support plate 136 is attached to the end of the inner shell cylinder 137 a of the axis alignment frame 137. A rack 137c in which teeth are arranged along the axis of the inner shell cylinder 137a is installed on the side peripheral surface of the inner shell cylinder 137a. A long groove hole 137d extends through the outer cylinder 137b along the axis, and the rack 137c protrudes outside the axis alignment frame 137 from the long groove hole 137d. The axis alignment frame 137 has a lead screw 137e extending along the cylinder axis outside the outer shell cylinder 137b. The axis alignment frame 137 has a stepping motor 137f, and the lead screw 137e is a rotating shaft of the stepping motor 137f disposed outside the outer shell cylinder 137b. A rack 137c disposed in the inner shell cylinder 137a meshes with the lead screw 137e.

  When the stepping motor 137f is driven and the lead screw 137e rotates, the rack 137c moves along the lead screw 137e, and the inner shell 137a also advances or is buried with respect to the outer shell 137b. The stepping motor 137f can rotate forward and backward, and when rotated in one direction, the axis alignment frame 137 expands, and when rotated in the opposite direction, the axis alignment frame 137 contracts.

  The sheet support plate 136 comes into contact with the wafer sheet 16 due to the extension of the axis alignment frame 137. By the contact with the wafer sheet 16, the wafer support plate 136 flattens the wafer sheet 16. The degree of extension is desirably such that the sheet support plate 136 lifts the wafer sheet 16 and tension is generated in the wafer sheet 16. That is, it is desirable to advance the sheet support plate 136 beyond the middle of the pair of donut plates 131a provided in the wafer ring fixing device 13. Further, the sheet support plate 136 is separated from the wafer sheet 16 due to the reduction of the axis alignment frame 137.

  The mechanism for expanding and contracting the axis alignment frame 137 is not limited to this. For example, a ball screw may be used instead of the lead screw 137e, and a nut screwed to the ball screw may be used instead of the rack 137c. Further, a linear motor or a piezo element may be connected to the inner shell cylinder 137a so that the inner shell cylinder 137a is directly moved.

(Operation)
The detailed operation of the wafer ring fixing device 13 and the operation of the electronic component transport device 1 will be described. As shown in FIG. 9, a sheet support plate 136 having a laser irradiation hole 136 a having a diameter included in the plane of the electronic component D transported by the electronic component transport apparatus 1 is mounted in the laser emission unit 135 in advance.

  The ring moving mechanism 133 of the wafer ring fixing device 13 moves the electronic component D to be picked up to the scheduled pickup position. The scheduled pickup position is a point on a straight line in which the stop position 1b directly beside the relay unit 14, the laser irradiation hole 136a of the sheet support plate 136, and the optical axis of the laser emitted by the laser emission unit 135 are arranged. For example, an appearance inspection or the like is performed on the wafer sheet 16 in advance, and the electronic components D are ranked according to the appearance inspection or the like, and are sequentially transported from the group of electronic components D belonging to the rank to be picked up to the pickup expected position. It is.

  The axis alignment frame 137 extends to place the flat surface of the sheet support plate 136 on the surface opposite to the side where the electronic component D of the wafer sheet 16 is attached, and further lifts the sheet support plate 136 together with the wafer sheet 16. By placing the wafer sheet 16 on the sheet support plate 136, at least an area overlapping with the sheet support plate 136 is flattened, and flapping and loosening are eliminated. Further, when the sheet support plate 136 lifts the wafer sheet 16, tension is generated in the wafer sheet 16, and fluttering and loosening of the wafer sheet 16 are further eliminated.

  When the sheet support plate 136 places the wafer sheet 16, the suction port 136 b generates a negative pressure and sucks the wafer sheet 16 placed on the sheet support plate 136. The wafer sheet 16 is attracted to the flat surface of the sheet support plate 136 by suction, the flattening is maintained, and the bending and flapping are further eliminated.

  In addition, the sheet | seat support plate 136 can be made into the magnitude | size containing the area | region containing the electronic component to be picked up and the electronic component D of the circumference | surroundings. Thereby, since it can planarize from the outer side of the sticking area | region of the electronic component D planned to be picked up, the flattening area is wide, and the sinking and bending of the sticking area of the electronic component D scheduled to be picked up can be further suppressed. Of course, it is only necessary to suppress the sinking or bending of the region where the electronic component D to be picked up is adhered, and the size of the sheet support plate 136 may be at least as long as it includes the electronic component D to be picked up.

  As shown in FIG. 10, the laser emission unit 135 irradiates a laser beam 134a in a state in which the electronic component D is at the planned pickup position. The laser beam 134a is narrowed by a laser irradiation hole 136a smaller than the laser diameter, and is emitted from the laser irradiation device 134 with a diameter included in an area where the electronic component D to be picked up is attached. That is, there is no need to change the laser diameter, and it is not necessary to prepare various lenses for changing the laser diameter. Therefore, it is possible to cope with various electronic components while reducing the cost of the laser irradiation device 134. Become.

  The inner peripheral portion of the laser beam 134 a emitted from the laser irradiation hole 136 a is irradiated to the wafer sheet 16. The outer peripheral ring-shaped region 134b of the laser beam 134a that could not enter the laser irradiation hole 136a is irradiated to the sheet support plate 136. As shown in FIG. 11, the region R1 in the wafer sheet 16 irradiated with the laser beam 134a is directly heated by the laser energy absorbed by the wafer sheet 16. Since the laser diameter is narrower than that of the electronic component D, the region R1 irradiated with the laser beam 134a is a part of the entire region where the electronic component D to be picked up is attached.

  In addition, the irradiation region R2 of the sheet support plate 136 is directly heated by irradiating the outer peripheral ring-shaped region 134b of the laser beam 134a. In particular, when the sheet support plate 136 is configured to include a material having high thermal conductivity that easily absorbs laser energy, such as silicon, iron, aluminum, and tin, the irradiation region R2 is easily heated. This irradiation region R2 is located outside the region R1 of the wafer sheet 16 directly heated by the laser beam 134a. The heat generated in the irradiation region R2 of the sheet support plate 136 spreads in the sheet support plate 136 so as to reach the peripheral region R3 of the region R1 directly heated by the laser beam 134a, and is further transferred to the wafer sheet 16. Therefore, the peripheral region R3 of the region R1 directly heated by the laser beam 134a is also indirectly heated via the sheet support plate 136. That is, the entire sticking area of the electronic component D to be picked up in the wafer sheet 16 becomes a heating area.

  As shown in FIG. 12, in the region R1 heated directly by the laser beam 134a and the region R3 heated indirectly via the sheet support plate 136, the filler in the foam filler 164 is gasified by heat and foamed. The filler 164 expands. Thereby, a reduction in the adhesion area with the electronic component D occurs in the entire attachment region of the electronic component D to be picked up, and the attachment force is lost in the entire attachment region of the electronic component D. In addition, the entire attachment region of the electronic component D to be picked up is lifted to the relay unit 14 side due to the expansion of the foam filler 164.

  As shown in FIG. 13, the suction nozzle 143 located just beside the relay unit 14 advances until it contacts the electronic component D by the advance / retreat drive device 145. The suction nozzle 143 moves to a position directly above the relay unit 14 while adsorbing the electronic component D by negative pressure, and faces the transport path 1a. At this time, as shown in FIG. 14, in the wafer ring fixing device 13, the electronic component D scheduled for the next pickup is moved to the planned pickup position by the ring moving mechanism 133. While the wafer sheet 16 moves, the laser irradiation device 134 reduces the alignment frame 137 and moves the sheet support plate 136 away from the wafer sheet 16.

  As a result, since the wafer sheet 16 and the sheet support plate 136 are separated during the movement of the wafer sheet 16, it is difficult for heat to be transferred from the heated sheet support plate 136 to the wafer sheet 16, and during the movement of the wafer sheet 16. The adhesive force of the adhesive layer 162 is not lost. For this reason, even if an electronic component D that is not scheduled to be picked up passes immediately above the sheet support plate 136, the electronic component D that is not scheduled to be picked up peels off from the wafer sheet 16, moves on the wafer sheet 16, and the wafer sheet 16 Is prevented from falling off.

  Further, the suction port 136b of the sheet support plate 136 is released from the blockage by the wafer sheet 16, and air flows to form an air cooling tube, which acts as a cooling means for the sheet support plate 136. Therefore, the radiant heat from the sheet support plate 136 is also reduced, and the moving wafer sheet 16 can be further suppressed from being heated by the sheet support plate 136.

  The suction nozzle 143 that holds the electronic component D at a position directly beside the relay unit 14 moves to a position immediately above. At the position directly above the relay unit 14, the advancing / retreating drive device 145 brings the suction nozzle 143 closer to the transport path 1 a. The handler 12 causes the suction nozzle 123 to reach immediately above the relay unit 14 and receives the electronic component D from the relay unit 14.

  The handler 12 intermittently moves the suction nozzle 123 along the transport path 1a while holding the electronic component D, and positions the electronic component in the processing unit 11 at each stop position 1b. Each processing unit 11 performs processing on the electronic component D that has reached directly above. The suction nozzle 123 around each processing unit 11 finally moves directly above the accommodation unit 15 and delivers the electronic component D to the accommodation unit 15. The housing unit 15 houses the electronic component D passed from the suction nozzle 123.

(effect)
As described above, the laser irradiation device 134 provided in the electronic component conveying apparatus 1 has an optical axis directed to the electronic component D, and faces the wafer sheet 16 from the surface opposite to the surface on which the electronic component D is attached. A laser emission unit 135 that emits a laser beam 134a is provided. The laser irradiation device 134 includes a sheet support plate 136 having a laser irradiation hole 136a that is coaxial with the optical axis of the laser beam 134a and smaller in diameter than the laser beam 134a.

  In the laser irradiation device 134, the outer peripheral ring-shaped region 134 b of the laser beam 132 a irradiated on the sheet support plate 136 heats the sheet support plate 136. The heat of the sheet support plate 136 spreads in the sheet support plate 136. The heat spread on the sheet support plate 136 is transmitted to the entire attachment region of the electronic component D in the wafer sheet 16, and the attachment region of the electronic component D in the wafer sheet 16 is heated via the sheet support plate 136. . Then, the electronic component D is peeled from the wafer sheet 16 together with the direct heating of the wafer sheet 16 by the inner region of the laser beam 134a that has passed through the laser irradiation hole 136a.

  Thereby, the sticking force of the whole sticking area | region of the electronic component D of the wafer sheet 16 can be lost, and the electronic component D can be peeled from the wafer sheet 16 with the laser beam 134a. Scratches and damage due to contact of an object such as a push-up pin with the electronic component can be prevented.

  The laser emission unit 135 emits a laser having a larger diameter, and it is desirable to form a laser irradiation hole 136a having a smaller diameter in the sheet support plate 136. As a result, the sheet support plate 136 is irradiated with more laser energy, the sheet support plate 136 is easily heated, and heat is quickly transmitted to the entire area where the electronic component D to be picked up is attached. The peelability of D is improved.

  Further, the laser irradiation device 134 includes an axis alignment frame 137. The axis alignment frame 137 supports the laser emission unit 135 and the sheet support plate 136 coaxially. The sheet support plate 136 is detachable with respect to the axis alignment frame 137, is coaxial with the optical axis of the laser beam 134a, has a smaller diameter than the diameter of the laser beam 134a, and a hole diameter corresponding to the size of the corresponding electronic component D. A laser irradiation hole 136 a is provided, and a part of the laser beam 134 a emitted from the laser emission unit 135 is emitted toward the wafer sheet 16 and the electronic component D.

  Accordingly, it is not necessary to prepare various lenses in order to change the laser diameter of the laser emission unit 135 according to the electronic component D, and it is possible to cope with various electronic components D while reducing the cost of the laser irradiation device 134. It becomes possible. In addition, when the attachment area | region of the electronic component D irradiated with the laser beam 134a is not planarized, it is not necessary to make the sheet | seat support plate 136 contact the wafer sheet 16. FIG. On the other hand, in the case of flattening, a further flattening effect can be obtained by lifting the wafer sheet 16 with the sheet support plate 136.

  Further, the wafer ring fixing device 13 includes a ring moving mechanism 133 that translates the ring holding part 131 along the sheet plane of the wafer sheet 16 and sequentially positions the electronic components D on the optical axis of the laser emitting part. Yes. The axis alignment frame 137 is extendable and contracted while the wafer sheet 16 is moved by the ring moving mechanism 133 until the sheet support plate 136 is separated from the wafer sheet 16. As a result, the sheet support plate 136 heated by irradiating the outer peripheral ring-shaped region 134b of the laser beam 134a does not transfer heat to the wafer sheet 16 being translated, and the electronic component is being moved while the wafer sheet 16 is moving. It can suppress that D peels.

  Further, a cooling means for cooling the sheet support plate 136 is further provided. In the present embodiment, the cooling means is a suction port 136 b that penetrates the sheet support plate 136 and sucks the wafer sheet 16. Thereby, since the suction port 136b becomes an air cooling tube, the sheet support plate 136 heated by irradiating the outer ring-shaped region 134b of the laser beam 134a can be quickly cooled. Heat is not transferred to the wafer sheet 16 being translated, and the electronic component D that is not scheduled to be picked up can be prevented from peeling off.

  The cooling means is not limited to the suction port 136b, and may be a blower that blows air toward the sheet support plate 136 or a heat radiating fin fixed to the sheet support plate 136.

(Second Embodiment)
Next, a second embodiment of the electronic component transport apparatus 1 according to the present invention will be described in detail. The same configurations and functions as those of the first embodiment are denoted by the same reference numerals, and detailed description thereof is omitted.

  FIG. 15 is a front view of the sheet support plate 136. As shown in FIG. 15, the sheet support plate 136 includes a central plate 136c, an annular plate 136d, and a coupling portion 136e. The central plate 136c, the annular plate 136d, and the coupling portion 136e may be integrally molded.

  The central plate 136c has, for example, a disk shape, is located immediately below the electronic component D to be picked up, and is wide enough not to reach the electronic component D that is the same as or adjacent to the electronic component D to be picked up. The laser irradiation hole 136a is formed. The annular plate 136d has, for example, an annular shape, surrounds the periphery of the center plate 136c, and is arranged at a distance from the center plate 136c, thereby forming a suction port 136b. That is, the sheet support plate 136 has a groove 136f between the center plate 136c and the annular plate 136d. The coupling portion 136e is bridged with the groove 136f and integrally connects the central plate 136c and the annular plate 136d.

  According to this sheet support plate 136, the laser beam 134a hits the center plate 136c, and the center plate 136c is heated. However, the central plate 136c and the annular plate 136d are disconnected by the groove 136f, and the heat of the central plate 136c is difficult to transfer to the annular plate 136d. Therefore, the sheet region located immediately above the annular plate 136d is difficult to be heated by the sheet support plate 136, and the electronic component D that is not scheduled to be picked up can be prevented from peeling from the wafer sheet 16.

  Note that it is only necessary that heat is not easily transmitted from the region of the central plate 136c to the region of the annular plate 136d, and the heat transfer area of the region connecting the region of the central plate 136c and the region of the annular plate 136d is small. Therefore, the groove 136f penetrates through the front and back of the sheet support plate 136, and one of the front and back of the sheet support plate 136 has a bottom, and is not dug into the center from both front and back directions of the sheet support plate 136. The sheet support plate 136 may be narrowed.

  Further, the center plate 136c is configured to easily absorb laser energy and include a material having high thermal conductivity. As a material that easily absorbs laser energy and has high thermal conductivity, silicon, iron, aluminum, tin, an alloy of iron, an alloy of aluminum, an alloy of tin, an iron metal compound, an aluminum metal compound, or These metal compounds, such as a metal compound of tin, can be mentioned. The coupling portion 136e and the annular plate 136d may be made of a heat insulating material such as urethane having low thermal conductivity. Further, the coupling portion 136e and the annular plate 136d may be made of a glass fiber sheet laminated material, zirconia, or the like that has low thermal conductivity and can easily secure mechanical rigidity.

  As a result, the central plate 136c that overlaps the electronic component D to be picked up is efficiently heated by the laser beam 134a, and heat is easily transferred to the region where the electronic component D to be picked up is attached. Since the overlapping annular plates 136d are difficult to transfer heat from the center plate 136c, it is difficult to peel off the electronic component D that is not scheduled to be picked up.

  In this way, when the sheet support plate 136 is sized to include the electronic component D to be peeled located on the optical axis of the laser emission unit 135 and the electronic component D located around the electronic component D, the peeling is scheduled. A central plate 136c including only the electronic component D, an annular plate 136d that covers the periphery of the central plate 136c, and a groove 136f that disconnects between the central plate 136c and the annular plate 136d. Thereby, the heat of the central plate 136c irradiated with the outer ring-shaped region 134b of the laser beam 134a is not easily transferred to the annular plate 136d on which the electronic component D that is not scheduled to be peeled is placed via the wafer sheet 16. It is possible to suppress peeling of the electronic component D that is not scheduled to be picked up.

  Further, as shown in FIG. 16, the groove 136f of the sheet support plate 136 may be filled with a resin 136g having low thermal conductivity to suppress heat transfer from the central plate 136c to the annular plate 136d. The heat of the center plate 136c is insulated by the resin 136g, the annular plate 136d is hardly heated, and the electronic component D that is not scheduled to be picked up is difficult to peel off.

(Modification)
Next, a modification of the second embodiment of the electronic component transport apparatus 1 according to the present invention will be described. The same configurations and functions as those of the second embodiment are denoted by the same reference numerals, and detailed description thereof is omitted.

  The central plate 136c is configured to include a material having high thermal conductivity that easily absorbs laser energy. As a material that easily absorbs laser energy and has high thermal conductivity, silicon, iron, aluminum, tin, an alloy of iron, an alloy of aluminum, an alloy of tin, an iron metal compound, an aluminum metal compound, or These metal compounds, such as a metal compound of tin, can be mentioned. On the other hand, the material of the coupling portion 136e and the annular plate 136d may be made of a material that easily absorbs laser energy and has a high thermal conductivity, or a material having a low thermal conductivity. However, the suction port 136b is formed in the annular plate 136d.

  The suction port 136b is formed so as to be located below the electronic component D that is not scheduled to be picked up, and generates a negative pressure that allows air to pass through the wafer sheet 16 and flow toward the suction port 136b. While the sheet support plate 136 supports the wafer sheet 16, the suction port 136 b heats the surrounding electronic component D that is not scheduled to be picked up and the area of the wafer sheet 16 to which the electronic component D that is not scheduled to be picked up is attached. It becomes a cooling means which suppresses that. That is, the suction port 136b allows the negative pressure air to flow into the area of the electronic component D that is not scheduled to be picked up and the wafer sheet 16 to which the electronic component D is attached while the sheet support plate 136 supports the wafer sheet 16. Create a flow.

  Therefore, the range of the electronic component D that is not scheduled to be picked up and the wafer sheet 16 to which the electronic component D is attached is irradiated with the sheet support plate 136, the region of the wafer sheet 16 that has absorbed the laser beam 134a, or the laser beam 134a. Even if heat is transmitted from the electronic component D, the temperature rise is suppressed by the cooling effect by the air flow. Thereby, peeling of the electronic component D which is not scheduled to be picked up is prevented.

(Third embodiment)
Next, a third embodiment of the electronic component transport apparatus 1 according to the present invention will be described in detail. The same configurations and functions as those in the first and second embodiments are denoted by the same reference numerals, and detailed description thereof is omitted.

  As shown in FIG. 17, the laser irradiation device 134 transmits a laser beam 134a having a wavelength that passes through the wafer sheet 16 with a predetermined transmittance and reaches the electronic component D, and the wafer sheet 16, the sheet support plate 136, and the electrons. Heat part D directly. The predetermined transmittance is for the purpose of transmitting the laser energy to the electronic component D through the wafer sheet 16, and is preferably 50% or more and 100% or less.

  When the transmittance is less than 100%, direct heating of the wafer sheet 16 can be used in combination, although the degree of effect depends on the transmittance. Hereinafter, the case where the wafer sheet 16, the electronic component D, and the sheet support plate 136 are all heated by the laser beam 134 a will be exemplified, but the laser beam 134 a completely transmits the wafer sheet 16 and supports the electronic component D and the sheet. The case where the plate 136 is heated by the laser beam 134a is also one aspect of the present invention.

  The laser emission unit 135 may include a wavelength converter, if necessary, corresponding to the material of the wafer sheet 16 in order to achieve a predetermined transmittance. When the substrate 161 of the wafer sheet 16 is a polyester film, the laser emission unit 135 emits a laser beam 134a having a wavelength of 330 nm or more that transmits the wafer sheet 16 with a transmittance of 75% or more and 90% or less. When the substrate 161 of the wafer sheet 16 is a polyester film, the laser emission unit 135 is a semiconductor laser that emits a laser beam 134a having a wavelength of about 920 nm, for example.

  As shown in FIG. 18, the outer peripheral ring-shaped region 134b of the laser beam 134a that could not enter the laser irradiation hole 136a is irradiated to the sheet support plate 136. A part of the inner region of the laser beam 134a emitted from the laser irradiation hole 136a is absorbed by the wafer sheet 16, and the other part is transmitted through the wafer sheet 16 and irradiated onto the electronic component D.

  As a result, the irradiation region R2 is directly heated on the sheet support plate 136 by irradiation of the outer peripheral ring-shaped region 134a of the laser beam 134a. Further, the region R1 in the wafer sheet 16 irradiated with the laser beam 134a is directly heated by the laser energy absorbed by the wafer sheet 16. Further, the region R4 of the electronic component D irradiated with the laser beam 134a is directly heated.

  The heat generated in the irradiation region R2 of the sheet support plate 136 is further transferred to the wafer sheet 16 so as to reach the peripheral region R3 of the region R2 directly heated by the laser beam 134a. The heat generated in the region R4 of the electronic component D is transferred to the entire electronic component D through a heat conduction medium such as a package or a bump of the electronic component D, and the heat spread over the entire electronic component D is directly heated. Heat is further transferred to the wafer sheet 16 so as to reach the peripheral region R3 of R2. That is, the entire attachment region of the electronic component D to be picked up including the peripheral region R3 of the region R2 heated directly by the laser beam 134a is indirectly heated through the sheet support plate 136 and the electronic component D. It becomes a heating area.

  In the heating region heated directly by the laser beam 134a and further transferred through the sheet support plate 136 and the electronic component D, the filler in the foam filler 164 is gasified by heat, and the foam filler 164 expands. Thereby, a reduction in the adhesion area with the electronic component D occurs in the entire attachment region of the electronic component D to be picked up, and the attachment force is lost in the entire attachment region of the electronic component D. In addition, the entire attachment region of the electronic component D to be picked up is lifted to the relay unit 14 side due to the expansion of the foam filler 164.

  As shown in FIG. 19, the suction nozzle 143 located at the side of the relay unit 14 is advanced by the advance / retreat drive device 145 until it comes into contact with the lifted electronic component D. The suction nozzle 143 has a hollow cylindrical shape to which a negative pressure is supplied as a main body. The nozzle tip 144 of the suction nozzle 143 is made of, for example, stainless steel, super steel, carbon steel, alumina, or the like, and has heat resistance and high thermal conductivity. These may be subjected to a rust-proof surface treatment.

  The suction nozzle 143 having the nozzle tip 144 having heat resistance and high thermal conductivity hardly deteriorates due to contact with the heated electronic component D, and cools the electronic component D from the contact point. Therefore, the thermal deterioration of the electronic component D is suppressed. In addition, when testing the electrical characteristics of the electronic component D, errors in the test result due to heat can be suppressed.

  In order to prevent thermal degradation of the electronic component D due to laser irradiation, it is desirable to adjust the laser output in advance. Or you may make it prevent the thermal deterioration of the electronic component D by laser irradiation by making the laser irradiation hole 136a of the sheet | seat support plate 136 still smaller, and suppressing the laser energy irradiated to the electronic component D. FIG.

  As described above, the laser emission unit 135 transmits the laser light 134 a having a wavelength that passes through the wafer sheet 16 with a predetermined transmittance and reaches the electronic component D. The wafer sheet 16, the electronic component D, and the sheet support plate 136 are heated to directly heat the bonding area of the electronic component D and to the entire bonding area of the electronic component D via the electronic component D and the sheet support plate 136. The electronic component D peels off due to heat. For example, the laser emission unit 135 emits a laser beam 134 a having a transmittance of 75% or more and 90% or less with respect to the wafer sheet 16.

  As a result, the wafer sheet 16 is directly heated by the laser beam 134a, the wafer sheet 16 is heated via the electronic component D heated by the laser beam 134a, and the wafer sheet 16 is heated via the sheet support plate 136 heated by the laser beam 134a. Heating is used in combination, and the entire pasting region of the electronic component D is quickly heated, and the peelability of the electronic component D from the wafer sheet 16 is improved. For this reason, while preventing the pick-up mistake of the electronic component D, the heating time until it loses sticking power can be shortened, and the conveyance speed of the electronic component D improves.

  Further, the suction nozzle 143 of the relay unit 14 is configured such that the nozzle tip 144 that comes into contact with the electronic component D is made of a heat-resistant and highly heat-conductive member. Thereby, it can suppress that the nozzle front-end | tip 144 deteriorates with a heat | fever, and the heated electronic component D can be cooled rapidly.

(Fourth embodiment)
Next, a fourth embodiment of the electronic component transport apparatus 1 according to the present invention will be described in detail. The same configurations and functions as those in the first to third embodiments are denoted by the same reference numerals, and detailed description thereof is omitted.

  As shown in FIG. 20, the laser irradiation device 134 has a beam splitter 135 a on the optical axis of the laser emission unit 135. The laser beam 134a emitted from the laser emission unit 135 is divided into two or more by the beam splitter 135a. Further, the laser irradiation device 134 is provided with a mirror 135b on the optical path of the laser beam 134a divided by the beam splitter 135a, and a single point of all the laser beams 134a within the wafer sheet 16 just below the electronic component D to be picked up. Cross at P.

  The laser irradiation hole 136a of the sheet support plate 136 has a diameter through which all the laser light 134a can pass. Alternatively, the laser irradiation holes 136a through which the respective laser beams 134a pass may be formed in accordance with the optical paths of the respective laser beams 134a.

  According to the laser irradiation device 134, in order to give laser energy to the electronic component D, even if the laser beam 134a having a high transmittance with respect to the wafer sheet 16 is irradiated, the wafer sheet 16 is given high laser energy, The sheet 16 is efficiently heated.

  Further, since the irradiation region of the laser beam 134a to the electronic component D is dispersed in a plurality, the laser energy applied to each irradiation region is also dispersed, and even if the output of the laser irradiation device 134 is increased, the irradiation of the irradiation region is caused by laser irradiation. The risk of damage can be reduced. On the other hand, if the output of the laser irradiation device 134 is increased, the wafer sheet 16 can be efficiently heated by receiving the benefit of the strong output at the intersection of the laser beams 134a.

  Further, since the laser irradiation region is scattered from the center of the electronic component D to the periphery, the heat transfer distance to the edge side of the electronic component D is reduced, and the entire electronic component can be heated in a short time. Therefore, the laser irradiation time for peeling the electronic component D from the wafer sheet 16 is shortened, and the conveying speed of the electronic component D is improved.

  The laser irradiation device 134 may cross the plurality of laser beams 134a at one point P in the wafer sheet 16. Therefore, the configuration is not limited to the configuration in which one laser beam 134a emitted from one laser emitting unit 135 is divided into a plurality of laser beams 134a.

  That is, as shown in FIG. 21, the laser irradiation device 134 may include a plurality of laser emission units 135 such as two machines. Each laser emission unit 135 is disposed with its optical axis oriented such that the optical path of each laser beam 134 a emitted from each laser emission unit 135 intersects at one point P in the wafer sheet 16. Also by this, the irradiation area of the laser beam 134a to the electronic component D is dispersed into a plurality, so even if the output of the laser irradiation device 134 is increased, the possibility of damage to the irradiation area due to laser irradiation can be reduced. On the other hand, if the output of the laser irradiation device 134 is increased, the wafer sheet 16 can be efficiently heated by receiving the benefit of the strong output at the intersection of the laser beams 134a. Further, since the laser irradiation region is scattered from the center of the electronic component D to the periphery, the heat transfer distance to the edge side of the electronic component D is reduced, and the entire electronic component can be heated in a short time.

(Fifth embodiment)
A fifth embodiment of the electronic component transport apparatus 1 according to the present invention will be described in detail. The same configurations and functions as those in the first to fourth embodiments are denoted by the same reference numerals, and detailed description thereof is omitted.

  As shown in FIG. 22, the suction nozzle 143 that picks up the electronic component D from the wafer sheet 16 advances until it comes into contact with the electronic component D before the electronic component D is peeled off, that is, before or during irradiation with the laser beam 134a. The electronic component D is sandwiched together with the sheet support plate 136. It should be noted that the load applied to the electronic component D by the suction nozzle 143 is preferably small, and at least the degree to which the electronic component D can be lifted by the expansion of the foam filler 164 is good.

  When the wafer ring fixing device 13 is placed vertically, or when the wafer ring fixing device 13 is placed upside down so as to hold the wafer sheet 16 with the electronic component D facing the ground side, the electronic component D to be picked up If the pasting area of the past loses the pasting force, the electronic component D tends to fall off the wafer sheet 16. For this reason, a configuration in which the suction nozzle 123 is advanced in advance before or during irradiation with the laser beam 134a and is sandwiched between the suction nozzle 123 and the sheet support plate 136 is particularly useful. It is possible to prevent D from falling and causing a pickup error.

  Moreover, when heat resistance and high thermal conductivity are imparted to the nozzle tip, heat can be absorbed from the electronic component D, and the electronic component D can be prevented from being indirectly heated. Furthermore, even when the electronic component D is heated and the wafer sheet 16 is indirectly heated via the electronic component D, the excessive heat is absorbed from the electronic component D heated by the laser beam 134a, An excessive temperature rise of the electronic component D is prevented. That is, the electronic component D is stabilized at a temperature higher than the temperature at which the adhesion of the wafer sheet 16 is lost and lower than the heat resistant temperature. Therefore, the suction nozzle 143 that is in contact with the electronic component D during the emission of the laser beam 134a suppresses thermal deterioration of the electronic component D.

  Further, the suction nozzle 143 also serves as a temperature rise restricting means for restricting an excessive temperature rise of the electronic component D, so that the output of the laser beam 134a can be increased. Therefore, the electronic component D can be quickly heated and peeled quickly, and the peeling of the electronic component D does not become a bottleneck, and the conveyance speed of the electronic component D can be improved.

(Other embodiments)
As described above, the embodiments of the present invention have been described. However, it is only necessary to irradiate the laser beam 134a to the wafer sheet 16 and the sheet support plate 136. be able to. These embodiments and modifications thereof are included in the scope and gist of the invention, and are included in the invention described in the claims and the equivalents thereof.

  For example, in the present embodiment, the annular transport path 1a is taken as an example. However, the transport mechanism for the electronic component D may be a linear transport system, and one transport path 1a with a plurality of turret tables 121. You may make it comprise. The handler 12 and the suction nozzle 143 of the relay unit 14 are an example of a holding unit, and an electrostatic suction method, a Bernoulli chuck method, or a chuck mechanism that mechanically clamps the electronic component D may be provided. Further, the various processing units 11 are not limited to the types described above, and replacement, number change, and arrangement order can be changed.

  The wafer ring fixing device 13 may be placed horizontally so as to hold the wafer sheet 16 with the electronic component D facing the ceiling side along the conveyance path 1a. In this case, the wafer ring fixing device 13 is disposed immediately below the relay unit 14, and the suction nozzle 143 facing directly below the relay unit 14 picks up the electronic component D. Further, the wafer ring fixing device 13 may be turned upside down so as to hold the wafer sheet 16 with the electronic component D facing the ground side along the conveyance path 1a.

  When the wafer ring fixing device 13 is placed vertically, or when the wafer ring fixing device 13 is placed upside down so as to hold the wafer sheet 16 with the electronic component D facing the ground, the electronic component D that is not scheduled to be picked up If the pasting area of the past loses the pasting force, the electronic component D tends to fall off the wafer sheet 16. Therefore, the structure for separating the sheet support plate 136, the cooling means for the sheet support plate 136 such as the suction port 136b, and the material selection for the sheet support plate 136 that does not easily absorb the laser beam 134a, or the center plate 136c of the sheet support plate 136 are annular. A configuration that does not transmit heat to the attachment region of the electronic component D that is not scheduled to be picked up, such as division into the plate 136d, is particularly useful.

  On the other hand, when the wafer ring fixing device 13 is placed horizontally, the wafer sheet 16 is easily bent and sinks. A configuration in which the wafer sheet 16 is flattened is particularly useful. The relay unit 14 can be eliminated if the wafer ring fixing device 13 is brought close to the transport path 1a and the electronic component D of the wafer ring fixing device 13 can be picked up by the suction nozzle 123 of the handler 12. When the relay unit 14 is excluded, the tip of the suction nozzle 123 of the handler 12 is made of stainless steel, super steel, carbon steel, alumina, or the like, and has heat resistance and high thermal conductivity. These may be subjected to a rust-proof surface treatment.

  Further, in this laser irradiation device 134, the laser beam 134a, the laser irradiation hole 136a, and the suction nozzle 143 in the lateral position provided in the relay unit 14 may be coaxial. The laser emission unit 135 may be composed of a light source part and a light guide part such as an optical fiber, and the light emission part emission port, the laser irradiation hole 136a, and the suction nozzle 143 may be coaxial. That is, the axis alignment frame 137 may be configured such that at least the laser irradiation hole 136a and the emission port of the laser emission unit 135 are coaxial.

  Further, as shown in FIG. 23, the wafer sheet 16 may be mixed with a metal powder 165 that easily absorbs laser in the adhesive layer 162. The laser energy is absorbed by the metal powder 165, and the wafer sheet 16 is efficiently heated.

DESCRIPTION OF SYMBOLS 1 Electronic component conveyance apparatus 1a Conveyance path | route 1b Stop position 11 Processing unit 12 Handler 121 Turret table 122 Direct drive motor 123 Adsorption nozzle 124 Advance / retreat drive apparatus 13 Wafer ring fixing apparatus 131 Ring holding part 131a Donut board 131b Expand ring 132 Gap part 133 Ring Moving mechanism 133a Support plate 133b Rail 133c Rail 134 Laser irradiation device 134a Laser 134b Outer ring-shaped region 135 Laser emission unit 135a Beam splitter 135b Mirror 136 Sheet support plate 136a Laser irradiation hole 136b Suction port 136c Central plate 136d Annular plate 136e Coupling part 136f Groove 136g Resin 137 Axis alignment frame 137a Inner shell cylinder 137b Outer shell cylinder 137c Rack 37d long groove hole 137e lead screw 137f stepping motor 14 relay unit 141 rotor 142 servo motor 143 suction nozzle 144 nozzle tip 145 advance / retreat drive device 15 housing unit 15a housing 16 wafer sheet 16a irradiation area 161 base material 162 adhesive layer 163 adhesive 164 foaming Filler 165 Metal powder D Electronic component

Claims (21)

A laser irradiation device for peeling an electronic component from a wafer sheet formed by adhering the electronic component to one side of a heat-peelable pressure-sensitive adhesive sheet,
A laser emitting portion that has an optical axis directed to the electronic component, and emits laser light from a surface of the wafer sheet opposite to the surface to which the electronic component is attached;
A plate having a laser irradiation hole coaxial with the optical axis of the laser light and having a diameter smaller than the diameter of the laser light;
With
The outer peripheral ring-shaped region of the laser light irradiated on the plate heats the plate, the heat of the plate spreads inside the plate, and the heat spread on the plate adheres to the electronic component of the wafer sheet. Transmitted to the entire attachment region, the attachment region of the electronic component of the wafer sheet is heated through the plate, along with the direct heating of the wafer sheet by the inner region of the laser light that has passed through the laser irradiation hole, Peeling the electronic component from the wafer sheet;
The laser irradiation apparatus characterized by this. The plate is made of a material with high thermal conductivity that is easy to absorb laser energy;
The laser irradiation apparatus according to claim 1. The plate comprises silicon, iron, aluminum, tin, alloys thereof, or metal compounds thereof;
The laser irradiation apparatus according to claim 2. An axial alignment frame that coaxially supports the laser emitting portion and the plate;
The plate is attachable to and detachable from the axis alignment frame, is coaxial with the optical axis of the laser beam, has a diameter smaller than the diameter of the laser beam, and has a hole diameter corresponding to the size of the corresponding electronic component. Having a hole and emitting a part of the laser light emitted by the laser emitting unit toward the wafer sheet and the electronic component;
The laser irradiation apparatus according to any one of claims 1 to 3. An axial alignment frame that coaxially supports the laser emitting portion and the plate;
The wafer sheet is translated along a sheet plane, and electronic components are sequentially positioned on the optical axis of the laser emitting unit,
The axis alignment frame is extendable and contracted during movement of the wafer sheet until the plate is separated from the wafer sheet;
The laser irradiation apparatus according to any one of claims 1 to 3. The plate is
The size including the electronic component to be peeled and the electronic component around the electronic component located on the optical axis of the laser emitting portion,
A central plate containing only the electronic components to be peeled;
An annular plate covering the periphery of the central plate;
A groove for breaking between the central plate and the annular plate;
Providing
The laser irradiation apparatus according to any one of claims 1 to 3. The plate further comprises a heat insulating material filling the groove;
The laser irradiation apparatus according to claim 6. The central plate is made of a material with high thermal conductivity that is easy to absorb laser energy,
The annular plate is made of a heat insulating material;
The laser irradiation apparatus according to claim 6. The central plate comprises silicon, iron, aluminum, tin, alloys thereof, or metal compounds thereof;
The annular plate comprises urethane, glass fiber sheet laminate or zirconia;
The laser irradiation apparatus according to claim 8. Further comprising cooling means for cooling the plate;
The laser irradiation apparatus according to claim 1, wherein: The cooling means is a suction port penetrating the plate and sucking the wafer sheet;
The laser irradiation apparatus according to claim 10. The suction port is provided below the other electronic components arranged around the electronic component to be picked up, and has a negative pressure through which air flows through the wafer sheet;
The laser irradiation apparatus according to claim 11. The laser emitting part is
Transmitting the wafer sheet with a predetermined transmittance, emitting a laser beam having a wavelength that reaches the electronic component,
By heating the wafer sheet, the electronic component, and the plate, directly heating the bonding area of the electronic component, and transferring heat to the entire bonding area of the electronic component via the electronic component and the plate, Peeling the electronic component;
The laser irradiation apparatus according to any one of claims 1 to 12. The laser emitting section intersecting a plurality of laser beams in the wafer sheet;
The laser irradiation apparatus according to claim 1, wherein: A beam splitter arranged on the optical axis of the laser emitting portion and for dividing the laser light;
Each mirror that reflects each laser beam so that each laser beam divided by the beam splitter intersects in the wafer sheet;
Further comprising,
The laser irradiation apparatus according to claim 14. Comprising a plurality of the laser emitting portions for emitting laser light from a plurality of directions with respect to one point in the wafer sheet;
The laser irradiation apparatus according to claim 14. The laser irradiation apparatus according to any one of claims 1 to 16,
A ring holding portion for holding a ring on which the wafer sheet is stretched;
Ring moving means for translating the ring holding portion along the sheet plane of the wafer sheet and sequentially positioning electronic components on the optical axis of the laser emitting portion;
Providing
A wafer ring fixing device. The wafer ring fixing device according to claim 17,
A holding unit for receiving and holding an electronic component from the wafer ring fixing device;
A transport path for transporting the electronic component received by the holding unit;
An accommodation unit that is disposed on the conveyance path and holds a container that accommodates electronic components that travel around the conveyance path;
With
The holding part is made of a heat-resistant and highly heat-conductive member at the tip that comes into contact with the electronic component,
An electronic component conveying device characterized by the above. The wafer ring fixing device according to claim 17,
A holding unit for receiving and holding an electronic component from the wafer ring fixing device;
A transport path for transporting the electronic component received by the holding unit;
An accommodation unit that is disposed on the conveyance path and holds a container that accommodates electronic components that travel around the conveyance path;
With
The holding part is in contact with the electronic component before or during the laser emission part emits the laser light,
An electronic component conveying device characterized by the above. The holding part has a tip that is in contact with the electronic component made of a heat-resistant and highly heat-conductive member,
The electronic component carrying apparatus according to claim 19. Further comprising a processing unit disposed between the wafer ring fixing device and the housing unit in the transport path and processing electronic components that travel around the transport path;
21. The electronic component conveying apparatus according to claim 18, wherein

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