JP2018093057A - 電子部品およびその製造方法 - Google Patents
電子部品およびその製造方法 Download PDFInfo
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- JP2018093057A JP2018093057A JP2016235203A JP2016235203A JP2018093057A JP 2018093057 A JP2018093057 A JP 2018093057A JP 2016235203 A JP2016235203 A JP 2016235203A JP 2016235203 A JP2016235203 A JP 2016235203A JP 2018093057 A JP2018093057 A JP 2018093057A
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- 238000004519 manufacturing process Methods 0.000 title description 12
- 229910052751 metal Inorganic materials 0.000 claims abstract description 166
- 239000002184 metal Substances 0.000 claims abstract description 166
- 239000000758 substrate Substances 0.000 claims abstract description 137
- 238000007789 sealing Methods 0.000 claims abstract description 44
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 26
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 19
- 229910052802 copper Inorganic materials 0.000 claims description 19
- 239000010949 copper Substances 0.000 claims description 19
- 229910000679 solder Inorganic materials 0.000 claims description 14
- 229910052759 nickel Inorganic materials 0.000 claims description 13
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 12
- 229910052737 gold Inorganic materials 0.000 claims description 12
- 239000010931 gold Substances 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- 238000005520 cutting process Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 description 65
- 230000001681 protective effect Effects 0.000 description 28
- 238000000034 method Methods 0.000 description 17
- 238000012986 modification Methods 0.000 description 9
- 230000004048 modification Effects 0.000 description 9
- 125000004122 cyclic group Chemical group 0.000 description 8
- 230000005540 biological transmission Effects 0.000 description 6
- 238000007747 plating Methods 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 238000010897 surface acoustic wave method Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 2
- 229910007637 SnAg Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052596 spinel Inorganic materials 0.000 description 2
- 239000011029 spinel Substances 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000007779 soft material Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
- H03H9/0547—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a vertical arrangement
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H2003/0071—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks of bulk acoustic wave and surface acoustic wave elements in the same process
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
【解決手段】基板10と、下面に機能部22が設けられ、前記機能部と前記基板の上面とが空隙25を介し対向するように、前記基板の上面に実装されたデバイスチップ21と、前記基板の上面に設けられ、平面視において前記デバイスチップを囲み、外縁に沿って凸部37aが設けられ、外側の側面が内側の側面より高い環状金属層37と、平面視において前記デバイスチップを囲み、前記環状金属層の上面に接合する金属封止部30と、前記金属封止部の側面および前記環状金属層の側面に設けられた金属膜と、を具備する電子部品。
【選択図】図1
Description
図3(a)から図6は、実施例1に係る電子部品の製造方法を示す断面図である。図3(a)に示すように、支持基板10aの上面に圧電基板10bの下面を接合する。この接合はウエハ状態で行なう。接合の方法としては、支持基板10aの上面と圧電基板10bの下面とを活性化させて常温接合する方法、または接着剤で接合する方法等がある。
10a 支持基板
10b 圧電基板
12、22 機能部
21 デバイスチップ
30 金属封止部
32 リッド
34 保護膜
37 環状金属層
37a 凸部
38 バンプ
Claims (8)
- 基板と、
下面に機能部が設けられ、前記機能部と前記基板の上面とが空隙を介し対向するように、前記基板の上面に実装されたデバイスチップと、
前記基板の上面に設けられ、平面視において前記デバイスチップを囲み、外縁に沿って凸部が設けられ、外側の側面が内側の側面より高い環状金属層と、
平面視において前記デバイスチップを囲み、前記環状金属層の上面に接合する金属封止部と、
前記金属封止部の側面および前記環状金属層の側面に設けられた金属膜と、
を具備する電子部品。 - 前記環状金属層の凸部の頂点は前記基板の上面と前記デバイスチップの下面との中間より上側に位置する請求項1記載の電子部品。
- 前記環状金属層は、銅、ニッケル、金、アルミニウムおよび銀の少なくとも1つからなる請求項1または2記載の電子部品。
- 前記デバイスチップおよび前記金属封止部の上面に設けられたリッドを具備する請求項1から3のいずれか一項記載の電子部品。
- 前記基板は、支持基板と前記支持基板の上面に接合された圧電基板とを有し、
前記環状金属層は前記圧電基板に埋め込まれている請求項1から4のいずれか一項記載の電子部品。 - 前記環状金属層は銅層であり、前記金属膜はニッケル層であり、前記環状金属層は半田層である請求項1から5のいずれか一項記載の電子部品。
- 前記機能部は弾性波素子である請求項1から6のいずれか一項記載の電子部品。
- 下面に機能部が設けられ、前記機能部と基板の上面とが空隙を介し対向するように、前記基板の上面にデバイスチップを実装する工程と、
前記基板の上面に設けられ平面視において前記デバイスチップを囲む環状金属層の上面に接合し、前記デバイスチップを囲む金属封止部を形成する工程と、
ダイシングブレードを用い前記金属封止部および前記環状金属層を切断することで、前記環状金属層の外側の側面が内側の側面より高くなるように前記環状金属層の外縁に沿って前記環状金属層に凸部を設ける工程と、
前記金属封止部の側面および前記環状金属層の側面に金属膜を形成する工程と、
を含む電子部品の製造方法。
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JP2016235203A JP6653646B2 (ja) | 2016-12-02 | 2016-12-02 | 電子部品およびその製造方法 |
US15/796,539 US10855248B2 (en) | 2016-12-02 | 2017-10-27 | Electronic component and method of manufacturing the same |
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JP2016235203A JP6653646B2 (ja) | 2016-12-02 | 2016-12-02 | 電子部品およびその製造方法 |
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JP6653646B2 JP6653646B2 (ja) | 2020-02-26 |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020155896A (ja) * | 2019-03-19 | 2020-09-24 | 太陽誘電株式会社 | 圧電薄膜共振器、弾性波デバイス、フィルタおよびマルチプレクサ |
CN113410643A (zh) * | 2021-05-19 | 2021-09-17 | 荣耀终端有限公司 | 具有噪声抑制结构的终端设备 |
WO2021200280A1 (ja) * | 2020-03-30 | 2021-10-07 | 株式会社村田製作所 | 電子部品 |
JP7406331B2 (ja) | 2019-09-27 | 2023-12-27 | 太陽誘電株式会社 | 電子デバイス、モジュールおよびウエハ |
Families Citing this family (1)
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---|---|---|---|---|
JP7397611B2 (ja) * | 2019-09-26 | 2023-12-13 | 太陽誘電株式会社 | 電子デバイス |
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JP2010114291A (ja) * | 2008-11-07 | 2010-05-20 | Renesas Technology Corp | シールド付き電子部品およびその製造方法 |
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JP6653646B2 (ja) | 2020-02-26 |
US10855248B2 (en) | 2020-12-01 |
US20180159504A1 (en) | 2018-06-07 |
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