JP2018090760A - Semiconductor sealing resin composition and semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor sealing resin composition which is excellent in heat resistance, thermal decomposition stability, mechanical characteristics, adhesion to metal wiring of a semiconductor element, and curability in molding and is suitably used for sealing a power semiconductor such as SiC or GaN.SOLUTION: A semiconductor sealing resin composition contains (A) epoxy resin, (B) a phenol compound, (C) a maleimide compound, (D) a curing accelerator, and (E) an inorganic filler. The content of maleimide groups of the maleimide compound (C) is 0.7-3.0 mol and the content of epoxy groups of the epoxy resin (A) is 0.3-0.9 mol, based on 1 mol of phenolic hydroxyl groups of the phenol compound (B). The content of the inorganic filler (E) is 200 pts.mass or more based on 100 pts.mass of the total amount of the components (A), (B) and (C).SELECTED DRAWING: None

Description

  The present invention relates to a resin composition for semiconductor encapsulation and a semiconductor device, and more specifically, it is excellent in heat resistance and thermal decomposition stability, and particularly suitable for use in power semiconductor encapsulation. About.

  Conventionally, an epoxy resin has been mainly used as a sealing resin in a semiconductor device. In recent years, power semiconductors such as SiC (silicon carbide) or GaN (gallium nitride) are attracting attention in place of conventional Si power semiconductors from the viewpoint of reducing power loss and miniaturizing devices by increasing power density. In order to achieve high power density, operation at high voltage and high current is required, but in devices using SiC or GaN, high temperature operation at 250 ° C. or higher, which is difficult with Si devices, is possible. .

  In this way, since elements using SiC or GaN operate at a high temperature of 250 ° C. or higher, the sealing resin used for sealing these elements is required to have heat resistance that can withstand a high temperature of 250 ° C. It has been.

  Under these circumstances, Patent Document 1 discloses an epoxy resin, an epoxy resin composition, and a cured product having a biphenol-biphenyl aralkyl structure, and shows that it is excellent in heat resistance, moisture resistance, and thermal conductivity. Yes. However, even when this epoxy resin is used, only a cured product having a glass transition temperature of around 200 ° C. is obtained when phenol novolac is used as a curing agent by a normal molding technique. For this reason, there is a problem that the characteristics of the sealing material for power semiconductors such as SiC having a high heat resistance that can withstand an operating temperature as high as 250 ° C. cannot be satisfied. Further, Patent Document 1 does not describe thermal decomposition stability considered to be important in a sealing material for power semiconductors such as SiC. Patent Document 2 discloses a triphenylmethane type polyvalent hydroxy resin and a phenol aralkyl resin as curing agents, but the adhesion to the substrate has not been studied, and there is a problem with the adhesion to the substrate. Is leaving.

In such a background, it has been studied to use a maleimide compound having excellent heat resistance in place of a conventional epoxy resin as a semiconductor sealing resin. However, while the maleimide compound is extremely excellent in heat resistance, there are problems such as insufficient adhesion to the substrate or poor handling properties because curing does not proceed sufficiently during molding. Therefore, in the conventional maleimide compound-based semiconductor sealing material, it cannot be said that the heat resistance, mechanical properties, adhesion to the base material, and curability at the time of molding are satisfied at the same time (for example, Patent Documents 3 and 4).
On the other hand, for example, Patent Document 5, Patent Document 6 and Patent Document 7 disclose resin compositions in which an epoxy resin, a phenol compound, and a maleimide compound are combined, and these are all used for laminated boards and printed wiring boards. This is the main technology, and it has not been proved that the technology here is applied to resin for semiconductor encapsulation. Heat resistance, mechanical properties, and base materials as encapsulating materials for power semiconductors such as SiC or GaN It is difficult to say that the adhesiveness and the curability during molding are satisfied at the same time.

WO2011 / 0774517 WO2014 / 065152 JP 2013-199627 A JP2015-101669A WO2011 / 126070 WO2012 / 057171 JP 2014-185221 A

  Accordingly, the object of the present invention is to be particularly excellent in heat resistance and thermal decomposition stability, and in addition to being excellent in mechanical properties, adhesion to a metal wiring of a semiconductor element, and curability at the time of molding. It is providing the resin composition for semiconductor sealing suitable for using for power semiconductor sealing. Another object of the present invention is to provide a semiconductor device having excellent reliability by sealing a power semiconductor such as SiC or GaN using the resin composition for semiconductor sealing.

  That is, the present invention includes (A) an epoxy resin, (B) a phenol compound, (C) a maleimide compound having two or more maleimide groups in one molecule, (D) a curing accelerator, and (E) an inorganic filler. (B) The maleimide group of the maleimide compound having two or more maleimide groups in one molecule is 0 with respect to 1 mol of the phenolic hydroxyl group of (B) the phenol compound. 0.7-3.0 mol, (A) the epoxy group of the epoxy resin is 0.3-0.9 mol, and the total amount of components (A), (B) and (C) is 100 parts by mass, (E) The resin composition for semiconductor encapsulation, wherein the inorganic filler is 200 parts by mass or more.

（但し、Ａはベンゼン環、ナフタレン環又はビフェニル環を示し、ｉは１〜１５の数、ｊは１又は２の数、及びｋは１又は２の数を示し、Ｇはグリシジル基を示す。）

（但し、Ｒ¹は水素原子又は炭素数１〜６の炭化水素基を示し、ｌは１〜１５の数を示し、Ｇはグリシジル基を示す。） Moreover, this invention is a resin composition for semiconductor sealing as described above whose (A) epoxy resin is at least 1 sort (s) of the epoxy resin represented by the following general formula (1) or (2).

(However, A shows a benzene ring, a naphthalene ring, or a biphenyl ring, i shows the number of 1-15, j shows the number of 1 or 2, and k shows the number of 1 or 2, and G shows a glycidyl group. )

(Wherein, R ¹ represents a hydrogen atom or a hydrocarbon group having 1 to 6 carbon atoms, l is a number of 1 to 15, G represents a glycidyl group.)

  Moreover, this invention is the resin composition for semiconductor sealing as described in the above, wherein j in the general formula (1) is 2.

（但し、ｍは平均値として０．２〜４．０を示し、Ｇはグリシジル基を示す。） Moreover, this invention is the resin composition for semiconductor sealing as described above whose general formula (1) is the following general formula (3).

(However, m shows 0.2-4.0 as an average value, G shows a glycidyl group.)

（但し、Ｒ²は水素原子又は炭素数１〜６の炭化水素基を示し、ｎは０〜５の数を示す。）

（但し、Ｂはベンゼン環又はナフタレン環を示し、ｉは１〜１５の数、ｊは１又は２の数を示す。）

（但し、Ｒ³は水素原子又は炭素数１〜６の炭化水素基を示し、ｌは１〜１５の数を示す。） Moreover, this invention is a resin composition for semiconductor sealing as described above whose (B) phenolic compound is at least 1 sort (s) of the phenolic compound represented by either of the following general formula (4)-(6). is there.

(Wherein, R ² represents a hydrogen atom or a hydrocarbon group having 1 to 6 carbon atoms, n is a number of 0-5.)

(However, B shows a benzene ring or a naphthalene ring, i shows the number of 1-15, j shows the number of 1 or 2.)

(However, R < ³ > shows a hydrogen atom or a C1-C6 hydrocarbon group, and l shows the number of 1-15.)

  The present invention also provides (C) a resin composition for encapsulating a semiconductor as described above, wherein the maleimide compound having two or more maleimide groups in one molecule is N, N′-4,4′-diphenylmethane bismaleimide. It is a thing.

  Moreover, this invention is the resin composition for semiconductor sealing as described above whose (D) hardening accelerator is an organic phosphine compound.

  Further, the present invention is such that the glass transition temperature (Tg) when the resin composition is cured is 250 ° C. or higher, and the adhesion strength (25 ° C.) when the semiconductor element is sealed is 2.0 MPa or higher. It is a resin composition for semiconductor sealing of description.

  Moreover, this invention is a semiconductor device characterized by sealing a semiconductor element using the resin composition for semiconductor sealing as described above.

  The cured product obtained by using the resin composition for encapsulating a semiconductor of the present invention is particularly excellent in heat resistance and thermal decomposition stability, and also in excellent mechanical properties and adhesion to a metal wiring of a semiconductor element, This resin composition for encapsulating a semiconductor is also excellent in curability during molding. Therefore, the resin composition for semiconductor encapsulation of the present invention can be suitably used particularly for power semiconductor encapsulation.

  Hereinafter, the present invention will be described in detail.

The resin composition for semiconductor encapsulation of the present invention includes (A) an epoxy resin, (B) a phenol compound, (C) a maleimide compound having two or more maleimide groups in one molecule, (D) a curing accelerator, and (E) An inorganic filler is an essential component.
(A) epoxy resin, (B) phenol compound, (C) maleimide compound having two or more maleimide groups in one molecule, (D) curing accelerator, and (E) inorganic filler are each (A ) Component, (B) component, (C) component, (D) component, and (E) component. Moreover, (A) epoxy resin is also called epoxy resin without attaching (A). The same applies to the other components.
The blending ratio of the components (A) to (E) is as follows.

  (B) With respect to 1 mol of phenolic hydroxyl groups of a phenol compound, (C) The maleimide group of the maleimide compound which has a 2 or more maleimide group in 1 molecule is mix | blended so that it may become 0.7-3.0 mol. Preferably it is 0.8-2.5 mol, More preferably, it is 1.0-2.0 mol. When it is less than 0.7 mol, the heat resistance is not sufficiently exhibited, and when it is more than 3.0 mol, the adhesion to the substrate and the curability during molding are lowered.

  (B) The epoxy group of (A) an epoxy resin is mix | blended so that it may become 0.3-0.9 mol with respect to 1 mol of phenolic hydroxyl groups of a phenol compound. Preferably it is 0.4-0.8 mol, More preferably, it is 0.5-0.7 mol. If it is less than 0.3 mol, the adhesion to the substrate and the curability at the time of molding will decrease, and if it is greater than 0.9 mol, the curability at the time of molding will decrease.

  (E) Content of an inorganic filler is 200 mass parts or more when the sum total of (A) + (B) + (C) component is 100 mass parts. Preferably it is 250 mass parts or more, More preferably, it is 400 mass parts or more.

  In the cured product of the resin composition for semiconductor encapsulation in the present invention, polymerization reaction involving the unsaturated bond of maleimide group, Michael addition reaction of maleimide group and phenolic hydroxyl group, crosslinking reaction of epoxy group and phenolic hydroxyl group, etc. A conventional maleimide compound that is considered to have occurred, and formed into a network of multiple forms and intermingled with each other, thereby simultaneously satisfying heat resistance, mechanical properties, adhesion to a substrate, and curability during molding It expresses characteristics that cannot be obtained by the system.

  The network based on the polymerization reaction of maleimide groups is particularly effective in improving heat resistance and thermal decomposition stability. Moreover, the network by the Michael addition reaction of a maleimide group and a phenolic hydroxyl group is particularly effective in improving mechanical properties and adhesion to a substrate. Moreover, the network by the crosslinking reaction of an epoxy group and a phenolic hydroxyl group has the effect of improving the curability at the time of molding.

  The epoxy resin (A) used in the semiconductor sealing resin composition of the present invention has sufficient insulation, moldability, that is, curability at the time of molding, heat resistance, mechanical properties, and adhesion to the metal wiring of the semiconductor element. Is necessary to get. (A) The epoxy resin is not particularly limited, and an epoxy resin having two or more epoxy groups in the molecule can be used. Specifically, a cresol novolac type epoxy resin, a phenol novolac type epoxy resin, an aralkyl can be used. Type epoxy resin, biphenyl skeleton containing aralkyl type epoxy resin, naphthalene skeleton containing aralkyl type epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, biphenyl type epoxy resin, dicyclopentadiene type epoxy resin, A triphenylmethane type epoxy resin, an alicyclic epoxy resin, etc. are mentioned, Among these, 1 type (s) or 2 or more types can be used.

（但し、Ａはベンゼン環、ナフタレン環又はビフェニル環を示し、ｉは１〜１５の数、ｊは１又は２の数、及びｋは１又は２の数を示し、Ｇはグリシジル基を示す。）
上記ベンゼン環、ナフタレン環又はビフェニル環は置換基を有してもよい。

（但し、Ｒ¹は水素原子又は炭素数１〜６の炭化水素基を示し、ｌは１〜１５の数を示し、Ｇはグリシジル基を示す。） Especially, it is preferable to contain at least 1 sort (s) of the epoxy resin represented by the following general formula (1) or (2).

(However, A shows a benzene ring, a naphthalene ring, or a biphenyl ring, i shows the number of 1-15, j shows the number of 1 or 2, and k shows the number of 1 or 2, and G shows a glycidyl group. )
The benzene ring, naphthalene ring or biphenyl ring may have a substituent.

(Wherein, R ¹ represents a hydrogen atom or a hydrocarbon group having 1 to 6 carbon atoms, l is a number of 1 to 15, G represents a glycidyl group.)

（但し、ｍは平均値として０．２〜４．０を示し、Ｇはグリシジル基を示す。） Among the epoxy resins represented by the general formula (1), an epoxy resin in which j is 2 is preferable. In particular, an epoxy resin represented by the following general formula (3) is preferable.

(However, m shows 0.2-4.0 as an average value, G shows a glycidyl group.)

  The epoxy resins represented by the general formulas (1) to (3) are preferably contained in the total epoxy resin component, preferably 10% by mass or more, more preferably 30% by mass or more, and further preferably 50% by mass or more.

  About the purity of an epoxy resin, a thing with few ionic impurities and hydrolyzable chlorine is good from a viewpoint of a moisture-resistant reliability improvement.

  The (B) phenol compound is also necessary for obtaining sufficient insulation, moldability, that is, curability at the time of molding, heat resistance, mechanical properties, and adhesion to the metal wiring of the semiconductor element. (B) The phenol compound is not particularly limited, and a phenol compound having two or more phenolic hydroxyl groups in the molecule can be used. Specifically, cresol novolak, phenol novolak, aralkyl type phenol compound, biphenyl can be used. Skeletal-containing aralkyl type phenolic compounds, naphthalene skeleton-containing aralkyl type phenolic compounds, dicyclopentadiene type phenolic compounds, trivalent or higher phenols represented by triphenylmethane type phenolic compounds, bisphenol A, bisphenol F, bisphenol S, fluorene bisphenol 2,4'-biphenol, 2,2'-biphenol, dihydric phenols such as hydroquinone, resorcin, catechol, naphthalene diol, and these bisphenol A 2 Polyhydric phenol compounds obtained by reaction with aldehydes such as phenol and formaldehyde are mentioned, it is possible to use one or more of these.

（但し、Ｒ²は水素原子又は炭素数１〜６の炭化水素基を示し、ｎは０〜５の数を示す。）

（但し、Ｂはベンゼン環又はナフタレン環を示し、ｉは１〜１５の数、ｊは１又は２の数を示す。）

（但し、Ｒ³は水素原子又は炭素数１〜６の炭化水素基を示し、ｌは１〜１５の数を示す。） Among these, it is preferable to contain at least one phenol compound represented by the following general formulas (4) to (6). The content at this time is preferably 10% by mass or more, more preferably 30% by mass or more, and still more preferably 50% by mass or more in all phenol compound components.

(Wherein, R ² represents a hydrogen atom or a hydrocarbon group having 1 to 6 carbon atoms, n is a number of 0-5.)

(However, B shows a benzene ring or a naphthalene ring, i shows the number of 1-15, j shows the number of 1 or 2.)

(However, R < ³ > shows a hydrogen atom or a C1-C6 hydrocarbon group, and l shows the number of 1-15.)

  (C) A maleimide compound having two or more maleimide groups in one molecule is necessary for obtaining an extremely high level of heat resistance in addition to sufficient insulation. The maleimide compound is not particularly limited. Specifically, bismaleimide compounds such as N, N′-4,4′-diphenylmethane bismaleimide, m-phenylene bismaleimide, p-phenylene bismaleimide, and 1 Examples thereof include polymaleimide compounds having three or more maleimide groups in the molecule, and one or more of these can be used.

  Among these, it is preferable to contain N, N′-4,4′-diphenylmethane bismaleimide. The content at this time is preferably 10% by mass or more, more preferably 30% by mass or more, and still more preferably 50% by mass or more in the (C) maleimide compound.

  The higher the proportion of the (C) maleimide compound in the total mass of the components (A) + (B) + (C) in the resin composition for semiconductor encapsulation, the heat resistance is improved. Sex is a contradictory relationship. The proportion of the (C) maleimide compound in the components (A) + (B) + (C) is preferably 30 to 70% by mass, more preferably 45 to 65% by mass.

  (D) The curing accelerator promotes the formation of a crosslinked network formed between the epoxy resin, phenolic compound, and maleimide compound, sufficient curing speed, heat resistance, mechanical properties, and adhesion to the metal wiring of the semiconductor element. Is necessary to get. For example, there are imidazoles, organic phosphines and the like. Specifically, imidazoles such as 2-methylimidazole, 2-phenylimidazole and 2-ethyl-4-methylimidazole, organic phosphines such as triphenylphosphine and tributylphosphine. Kind. Furthermore, those obtained by encapsulating them can be used. Imidazoles and organic phosphines are considered to promote the anionic polymerization reaction of maleimide groups and promote the crosslinking reaction of epoxy groups and phenolic hydroxyl groups. From the viewpoint of improving heat resistance, mechanical properties, adhesion to a substrate, and curability during molding, an organic phosphine compound is preferable. These curing accelerators can be used alone or in combination of two or more.

  (D) Content of hardening accelerator is 0.1-10 mass parts, when the mass sum total of (A) + (B) + (C) component in the resin composition for semiconductor sealing is 100 mass parts. A range is preferable. If the amount is less than 0.1 parts by mass, the curing accelerating effect is not sufficient.

  (E) The inorganic filler is not particularly limited as long as it is an inorganic filler usually used in a resin composition, and specifically, fused silica, silica of crystalline silica, alumina, boron nitride, aluminum nitride. Etc. can be used. There are spherical and crushed shapes, but in order to improve the fluidity at the time of molding as a resin composition for semiconductor encapsulation, a spherical one is used, and mechanical properties are improved as a resin composition for semiconductor encapsulation. In general, a crushed material is used.

  (E) Content of an inorganic filler is 200 mass parts or more when the mass sum total of (A) + (B) + (C) component in the resin composition for semiconductor sealing is 100 mass parts. Preferably it is 250 mass parts or more, More preferably, it is 400 mass parts or more. When the amount is less than 200 parts by mass, mechanical properties such as fracture strength and low thermal expansibility and adhesion to the metal wiring of the semiconductor element are not sufficient, and the reliability of the semiconductor is reduced. On the other hand, when the amount is too large, for example, when the amount exceeds 1200 parts by mass, the workability deteriorates due to a decrease in fluidity at the time of molding, generation of voids, and the like. When forming a relatively large package in a power semiconductor such as SiC or GaN, it is desirable that the content of the inorganic filler is low from the viewpoint of fluidity.

  In addition, it is preferable to use what (E) inorganic filler surface-treated beforehand with coupling agents, such as a silane coupling agent and a titanate coupling agent, in order to improve the coupling | bonding with resin.

  A radical generator may be added to the resin composition for encapsulating a semiconductor of the present invention in order to accelerate the polymerization reaction of maleimide groups and increase the heat resistance. Examples of radical generators include organic peroxides, and specific examples of organic peroxides include 2,5-dimethyl-2,5-di (benzoylperoxy) hexane, α, α′-di ( t-Butylperoxy) diisopropylbenzene, di-t-butyl peroxide, diisopropylbenzene hydroperoxide and the like.

  The resin composition for encapsulating a semiconductor of the present invention includes, for example, a flame retardant such as brominated epoxy, a flame retardant aid such as antimony trioxide, a release agent such as carnauba wax, a colorant such as carbon black, a silicone oil, etc. It is possible to contain a low stress agent.

  The method for preparing the resin composition for encapsulating a semiconductor of the present invention may be any method as long as various raw materials can be uniformly dispersed and mixed. As a general method, a raw material having a predetermined blending amount is mixed. Examples of the method include sufficient mixing by using a mixing roll, an extruder, and the like, followed by cooling and pulverization.

  The hardened | cured material of this invention is obtained by shape | molding the said resin composition for semiconductor sealing, and thermosetting by postcure. As the molding method, for example, methods such as transfer molding, press molding, cast molding, injection molding, and extrusion molding are applied. From the viewpoint of mass productivity, transfer molding is preferable.

  The resin composition for encapsulating a semiconductor of the present invention is appropriately selected from the range of normal conditions for thermosetting. For example, after molding at 100 ° C. to 200 ° C., preferably 150 ° C. to 190 ° C., 200 ° C. to 300 ° C. C., preferably 230-270.degree. C., is cured well, particularly excellent in heat resistance and thermal decomposition stability, and also excellent in mechanical properties and adhesion to the metal wiring of the semiconductor element. A cured product can be obtained.

  For example, the molding time is preferably 1 to 30 minutes, and more preferably 1 to 10 minutes. When the molding time is shorter than 1 minute, it becomes difficult to release due to poor curing, and when it is longer than 30 minutes, the productivity is lowered. The post cure time is preferably, for example, 10 minutes to 10 hours, and more preferably 30 minutes to 6 hours. When the post-cure time is shorter than 10 minutes, curing does not proceed sufficiently, and sufficient characteristics such as heat resistance, thermal decomposition stability, mechanical characteristics, and adhesion to the metal wiring of the semiconductor element cannot be obtained. Moreover, when it becomes longer than 10 hours, productivity will fall.

  The resin composition for encapsulating a semiconductor of the present invention is excellent in various physical properties of the obtained cured product. For example, the glass transition temperature (Tg) is 250 ° C. or higher, preferably 290 ° C. or higher, more preferably 300 ° C. or higher. The adhesion strength (25 ° C.) with the semiconductor element is 2.0 MPa or more, preferably 3.0 MPa or more, more preferably 4.0 MPa or more. Moreover, it is excellent in curability at the time of molding in spite of blending a maleimide compound.

  Hereinafter, the present invention will be specifically described with reference to synthesis examples, examples and comparative examples. However, the present invention is not limited to these.

Synthesis example 1
In a 1000 ml four-necked flask, 77.5 g of 4,4′-dihydroxybiphenyl, 180.8 g of diethylene glycol dimethyl ether, and 41.8 g of 4,4′-bischloromethylbiphenyl were charged, and the temperature was raised to 170 ° C. with stirring in a nitrogen stream. The reaction was allowed to warm for 2 hours. After the reaction, 123 g of diethylene glycol dimethyl ether was recovered, dissolved in 385.4 g of epichlorohydrin and 57.8 g of diethylene glycol dimethyl ether, and 69.4 g of 48% aqueous sodium hydroxide solution was added dropwise at 62 ° C. under reduced pressure (about 130 Torr) over 4 hours. . During this time, the generated water was removed from the system by azeotropy with epichlorohydrin, and the distilled epichlorohydrin was returned to the system. After completion of the dropwise addition, the reaction was continued for another hour. Thereafter, epichlorohydrin was distilled off, methyl isobutyl ketone was added, the salt was removed by washing with water, filtration and washing were performed, and then methyl isobutyl ketone as a solvent was distilled off under reduced pressure to obtain 120 g of an epoxy resin. (Epoxy resin A). This epoxy resin A was represented by the above formula (3), m was 1, and its epoxy equivalent was 199.

Examples 1-17, Comparative Examples 1-6
Epoxy resins a to c were used as the epoxy resin component, phenol compounds a to e as the phenol compound, and N, N′-4,4′-diphenylmethane bismaleimide as the maleimide compound. In addition, the following curing accelerator, inorganic filler, colorant, and release agent were used. About the hardening accelerator, the coloring agent, and the mold release agent, the same amount was used by all the Examples and the comparative examples. These were blended and roll kneaded at the ratios shown in Tables 1 to 3 to obtain a resin composition for semiconductor encapsulation. The numerical values in Tables 1 to 3 are shown in parts by mass when the total mass of the epoxy resin, phenol compound, and maleimide compound is 100 parts by mass.

The explanation of abbreviations in the table is as follows.
(Epoxy resin)
Epoxy resin a: Epoxy resin A obtained in Synthesis Example 1
Epoxy resin b: phenol novolac type epoxy resin (manufactured by Nippon Steel & Sumikin Chemical Co., Ltd., YDPN-6300, epoxy equivalent 172.4)
Epoxy resin c: biphenyl aralkyl type epoxy resin (Nippon Kayaku Co., Ltd., NC-3000, epoxy equivalent 275)
(Phenol compound)
Phenol compound a: triphenylmethane type phenol resin (manufactured by Gunei Chemical Industry Co., Ltd., TPM-100, phenolic hydroxyl group equivalent 97.5)
Phenol compound b: phenol novolak (Showa Denko KK, BRG-555, phenolic hydroxyl group equivalent 105)
Phenol compound c: Phenol aralkyl type phenol resin (Mitsui Chemicals, XLC-4L, phenolic hydroxyl group equivalent 182)
Phenol compound d: naphthol aralkyl type phenol resin (manufactured by Nippon Steel & Sumikin Chemical Co., Ltd., SN-485, phenolic hydroxyl group equivalent 210)
Phenol compound e: biphenyl aralkyl type phenol resin (manufactured by Nippon Kayaku Co., Ltd., KAYAHARD GPH-65, phenolic hydroxyl group equivalent 200)
(Maleimide compound)
N, N′-4,4′-diphenylmethane bismaleimide (molecular weight 358)
(Curing accelerator)
Triphenylphosphine (TPP)
(Inorganic filler)
Spherical fused silica (average particle size 30 μm)
(Coloring agent)
Carbon black (release agent)
Carnauba Wax MI / OH represents the molar ratio of the maleimide group of the maleimide compound to the phenolic hydroxyl group of the phenol compound, and EP / OH represents the molar ratio of the epoxy group of the epoxy resin to the phenolic hydroxyl group of the phenol compound.
In addition, since the usage-amount of the following component was made constant with the following quantity (mass part) also in any Example and comparative example, the description was abbreviate | omitted.
TPP; 1.00, carbon black; 0.51, carnauba wax; 1.60.

  The physical property measurements in Tables 4 to 6 are based on the following evaluation methods.

1) Epoxy equivalent Using a potentiometric titrator, methyl ethyl ketone was used as a solvent, a brominated tetraethylammonium acetic acid solution was added, and measurement was performed using a 0.1 mol / L perchloric acid-acetic acid solution with a potentiometric titrator.

  The evaluations shown in 2) to 5) below are carried out using cured products obtained by molding and post-curing the resin compositions for semiconductor encapsulation of Examples and Comparative Examples. The conditions at that time are all based on a molding temperature of 175 ° C./molding time of 5 minutes and a post cure temperature of 250 ° C./post cure time of 5 hours.

2) Dynamic viscoelasticity (Tg, E ′)
Using a dynamic viscoelasticity measuring apparatus (DMS6100 type, manufactured by SII Nano Technology), measurement was performed by scanning storage elastic modulus, loss elastic modulus, and tan δ at a frequency of 10 Hz and a heating rate of 4 ° C./min. . The peak temperature of tan δ was read as Tg, and the storage elastic modulus (E ′) at 250 ° C. was also read.

3) Pyrolysis weight reduction 1% weight reduction temperature (Td1 (Td1 (Td1 (Td1 (T / DTA7300 type, manufactured by SII Nano Technology)) Air)) was measured.

4) Flexural strength, flexural modulus Measurement was performed at 25 ° C. and 250 ° C. by a three-point bending test method based on JISK6911.

5) Adhesive strength A lateral load was applied to a pudding cup having a cup area of 11 mm ² formed on a Cu substrate by transfer molding at a speed of 3 mm / min, and thereby the strength when sheared was determined. Measurements were taken at 25 ° C and 250 ° C.

6) Formability (extractability of molded product)
Using the spiral flow measurement mold compliant with the standard (EMMI-1-66), the semiconductor sealing resin compositions of Examples and Comparative Examples were formed by transfer molding under conditions of a molding temperature of 190 ° C. and a molding time of 5 minutes. Molding was performed. ○ When the molded product is taken out from the mold immediately after the predetermined molding time, the molded product is strong enough that the molded product can be taken out well. Those that could not be taken out satisfactorily due to breakage during taking out were evaluated as x.

  The resin composition for encapsulating a semiconductor of the present invention is particularly excellent in heat resistance and thermal decomposition stability when used for encapsulating a power semiconductor such as SiC or GaN. The power semiconductor device having excellent reliability can be obtained by being excellent in the adhesion and curability at the time of molding.

Claims (9)

  (A) epoxy resin, (B) phenol compound, (C) a maleimide compound having two or more maleimide groups in one molecule, (D) a curing accelerator, and (E) an inorganic filler containing an inorganic filler Resin composition for (B) 1 mol of phenolic hydroxyl group of phenol compound, (C) maleimide group of maleimide compound having 2 or more maleimide groups in one molecule is 0.7 to 3.0 mol (A) The epoxy group of the epoxy resin is 0.3 to 0.9 mol, and (E) inorganic filler with respect to 100 parts by mass of the total amount of components (A), (B) and (C) Is a resin composition for encapsulating a semiconductor, characterized by being 200 parts by mass or more. (A) The resin composition for semiconductor sealing of Claim 1 whose epoxy resin is at least 1 sort (s) of the epoxy resin represented by the following general formula (1) or (2).

(However, A shows a benzene ring, a naphthalene ring, or a biphenyl ring, i shows the number of 1-15, j shows the number of 1 or 2, and k shows the number of 1 or 2, and G shows a glycidyl group. )

(Wherein, R ¹ represents a hydrogen atom or a hydrocarbon group having 1 to 6 carbon atoms, l is a number of 1 to 15, G represents a glycidyl group.)   The resin composition for semiconductor encapsulation according to claim 2, wherein j in the general formula (1) is 2. The resin composition for semiconductor encapsulation according to claim 2, wherein the general formula (1) is the following general formula (3).

(However, m shows 0.2-4.0 as an average value, G shows a glycidyl group.) (B) The phenol compound is at least one of the phenol compounds represented by any one of the following general formulas (4) to (6), The resin for semiconductor encapsulation according to any one of claims 1 to 4. Composition.

(Wherein, R ² represents a hydrogen atom or a hydrocarbon group having 1 to 6 carbon atoms, n is a number of 0-5.)

(However, B shows a benzene ring or a naphthalene ring, i shows the number of 1-15, j shows the number of 1 or 2.)

(However, R < ³ > shows a hydrogen atom or a C1-C6 hydrocarbon group, and l shows the number of 1-15.)   (C) The maleimide compound having two or more maleimide groups in one molecule is N, N′-4,4′-diphenylmethane bismaleimide, The semiconductor encapsulation according to any one of claims 1 to 5. Resin composition.   (D) A hardening accelerator is an organic phosphine compound, The resin composition for semiconductor sealing as described in any one of Claims 1-6.   8. The glass transition temperature (Tg) when the resin composition is cured is 250 ° C. or higher, and the adhesion strength (25 ° C.) when the semiconductor element is sealed is 2.0 MPa or higher. The resin composition for semiconductor encapsulation according to one item.   A semiconductor device comprising a semiconductor element sealed with the semiconductor sealing resin composition according to claim 1.