JP7356931B2 - Silicon carbide, gallium oxide, gallium nitride, and diamond element encapsulation molding material compositions, and electronic component devices - Google Patents

Description

The present invention relates to a molding material composition for sealing SiC, Ga ₂ O ₃ , GaN, and diamond elements, and an electronic component device.

Conventionally, epoxy resin molding materials have been widely used in the field of encapsulating electronic components such as transistors and ICs. This is because the epoxy resin has an excellent balance of electrical properties, moisture resistance, mechanical properties, adhesion to inserts, etc.

In recent years, there has been a growing momentum for energy conservation worldwide due to concerns about the future depletion of resource energy and the so-called global warming problem. Power devices (power semiconductors) that control or convert electric power and are said to be ``key devices in energy-saving technology'' are attracting attention.
Power conversion efficiency is one of the items that determines the performance of power semiconductors. At this time, we are researching and developing power devices using new semiconductor materials such as silicon carbide (SiC), gallium nitride (GaN), gallium oxide (Ga ₂ O ₃ ), and diamond, which have higher conversion efficiency than conventional Si elements. Distribution in the market has become booming.

Among them, SiC and GaN can operate at higher temperatures than conventional Si elements, and SiC in particular has higher voltage resistance than Si elements, so it can be used with smaller elements and packages than ever before. It is expected to achieve pressure resistance.

In addition, particularly in automotive applications, there is a need for a sealing material that can be used in harsh environments that are subject to large temperature changes.
For example, Patent Document 1 discloses a sealing resin composition containing a thermosetting resin, a low stress agent, and a filler, wherein the glass transition temperature of a cured product of the sealing resin composition is In addition to satisfying specific conditions, the linear expansion coefficient α2 [ppm/°C] above the glass transition temperature of the cured product and the flexural modulus E ₂₅ [GPa] at 25 °C of the cured product meet specific conditions. A sealing resin composition is disclosed.

Japanese Patent Application Publication No. 2018-150456

However, the sealing resin composition described in Patent Document 1 mentioned above is not able to withstand use under harsh environments in automobile applications in terms of temperature cycle resistance, and there is still room for improvement. ing.

The present invention has been made in view of these circumstances, and has a high glass transition temperature and thermal decomposition start temperature, excellent heat resistance, excellent adhesion to semiconductor insert parts, and even when subjected to temperature cycle tests. It is an object of the present invention to provide a molding material composition for sealing that can obtain a cured product that does not easily peel off from a semiconductor insert component, and an electronic component device using the molding material composition for sealing.

As a result of intensive studies to solve the above problems, the present inventors cured the molding material composition for sealing in a mold at 180°C for 180 seconds, and then outside the mold at 200°C for 80 seconds. Stress σ (1) generated when obtaining a cured product by post-curing under conditions of time, depending on the thermal history generated when performing 1000 cycles of a temperature cycle test at -40 to 250°C using the cured product A seal in which the generated stress σ(2) and the generated stress σ(3) generated due to irreversible shrinkage of the cured product when the temperature cycle test is conducted for 1000 cycles using the cured product meet specific conditions. It has been found that a molding material composition for molding can solve the above problems.
The present invention was completed based on this knowledge.

That is, the present disclosure relates to the following.
[1] A molding material composition for sealing comprising (A) a thermosetting resin, (B) a curing accelerator, and (C) a filler,
Occurrence that occurs when the molding material composition for sealing is cured in a mold at 180°C for 180 seconds, and then post-cured outside the mold at 200°C for 8 hours to obtain a cured product. Stress σ(1), stress σ(2) generated due to thermal history generated when 1000 cycles of a temperature cycle test at -40 to 250°C using the cured product, and the temperature cycle test using the cured product SiC, Ga ₂ O ₃ , GaN, and a molding material composition for sealing a diamond element, in which the stress σ (3) generated due to irreversible contraction of the cured product when the test is performed for 1000 cycles satisfies the following formula (1). thing.

(In the formula, α is the molding shrinkage rate (%) at 25°C with respect to the mold dimensions of the cured product, and β is 25°C with respect to the mold dimensions of the cured product after the cured product is further left at 250°C for 500 hours. _E25 is the storage modulus (GPa) of the cured product at 25°C, _E250 is the storage modulus (GPa) of the cured product at 250°C, and CTEt is the linear expansion coefficient (GPa) of the cured product. ppm/°C), CTE1 is the coefficient of linear expansion below the glass transition temperature of the cured product (ppm/°C), CTE2 is the coefficient of linear expansion above the glass transition temperature of the cured product (ppm/°C), and Tg is the coefficient of linear expansion above the glass transition temperature of the cured product (ppm/°C). Represents the glass transition temperature (°C) of the cured product.)
[2] The molding material composition for sealing SiC, Ga ₂ O ₃ , GaN, and diamond elements according to [1] above, wherein the value of σ(3) is 0.00 to 50.0 MPa.
[3] The molding material composition for sealing SiC, Ga ₂ O ₃ , GaN, and diamond elements according to [1] or [2] above, wherein the value of σ(1) is 0.00 to 30.0 MPa.
[4] The value of α is 0.00 to 0.20%, and the value of β-α is 0.00 to 0.40%, according to any one of [1] to [3] above. A molding material composition for sealing SiC, Ga ₂ O ₃ , GaN and diamond elements.
[5] SiC, Ga ₂ O ₃ , GaN and diamond element sealing according to any one of [1] to [4] above, wherein the cured product of the sealing molding material composition has a thermal decomposition initiation temperature higher than 350°C. A molding material composition for stopping use.
[6] For sealing SiC, Ga ₂ O ₃ , GaN and diamond elements according to any one of [1] to [5] above, wherein the adhesive strength of the cured product of the molding material composition for sealing is 5 MPa or more. Molding material composition.
[7] The molding for sealing SiC, Ga ₂ O ₃ , GaN, and diamond elements according to any one of [1] to [6] above, wherein the (C) filler includes (c-2) a hollow structure filler. Material composition.
[8] The molding material composition for sealing SiC, Ga ₂ O ₃ , GaN and diamond elements according to any one of [1] to [7] above, further comprising (D) a low stress agent.
[9] The SiC according to any one of [1] to [8] above, wherein the (C) filler includes (c-3) an organic filler, and the (c-3) organic filler includes cellulose; Ga ₂ O ₃ , GaN and a molding material composition for encapsulating a diamond element.
[10] An electronic component device comprising an element sealed with a cured product of the molding material composition for sealing according to any one of [1] to [9] above.

According to the present invention, the cured product has a high glass transition temperature and thermal decomposition start temperature, has excellent heat resistance, has excellent adhesion to semiconductor insert parts, and is difficult to peel off from semiconductor insert parts even when subjected to a temperature cycle test. It is possible to provide a molding material composition for sealing that can obtain the following, and an electronic component device using the molding material composition for sealing.

Hereinafter, the present invention will be described in detail with reference to one embodiment.

<SiC, Ga ₂ O ₃ , GaN and molding material composition for sealing diamond elements>
The molding material composition for encapsulating SiC, Ga ₂ O ₃ , GaN, and diamond elements (hereinafter also simply referred to as the encapsulating molding material composition) of the present embodiment includes (A) a thermosetting resin, (B) a cured A encapsulating molding material composition containing an accelerator and (C) a filler, wherein the encapsulating molding material composition is cured in a mold at 180°C for 180 seconds, and then cured outside the mold. The stress σ (1) generated when a cured product is obtained by post-curing at 200°C for 8 hours, and when the cured product is subjected to 1000 cycles of a temperature cycle test at -40 to 250°C. The generated stress σ (2) due to the generated thermal history and the generated stress σ (3) generated due to irreversible shrinkage of the cured product when the temperature cycle test is conducted for 1000 cycles using the cured product are expressed by the following formula. It is characterized by satisfying (1).

(In the formula, α is the molding shrinkage rate (%) at 25°C with respect to the mold dimensions of the cured product, and β is 25°C with respect to the mold dimensions of the cured product after the cured product is further left at 250°C for 500 hours. _E25 is the storage modulus (GPa) of the cured product at 25°C, _E250 is the storage modulus (GPa) of the cured product at 250°C, and CTEt is the linear expansion coefficient (GPa) of the cured product. ppm/°C), CTE1 is the coefficient of linear expansion below the glass transition temperature of the cured product (ppm/°C), CTE2 is the coefficient of linear expansion above the glass transition temperature of the cured product (ppm/°C), and Tg is the coefficient of linear expansion above the glass transition temperature of the cured product (ppm/°C). Represents the glass transition temperature (°C) of the cured product.)

The present inventors have discovered that the reason why the semiconductor insert component and the sealing resin (cured product) peel after performing a temperature cycle test (hereinafter also simply referred to as a temperature cycle test) at -40 to 250°C is because the semiconductor insert The adhesion between the part and the cured product is determined by the stress (generated stress σ(1)) generated when molding (curing) the sealing molding material composition, and the temperature cycle test using the cured product. Stress σ (2) generated due to the thermal history that occurs when performing 1000 cycles, and stress σ generated due to irreversible contraction of the cured product when the temperature cycle test is performed using the cured product 1000 cycles It has been found that this occurs when the stress is smaller than the sum of (3), and it has been found that the generated stress is within a specific range.

The absolute value of the generated stress σ(1), the sum of the absolute values of σ(2) and σ(3) is 0.00 MPa or more and 100.0 MPa or less. If the sum of the absolute value of σ(1), σ(2) and σ(3) exceeds 100.0 MPa, the cured product may peel off from the semiconductor insert component after the temperature cycle test. From this point of view, the absolute value of σ(1) and the sum of the absolute values of σ(2) and σ(3) are preferably 80.0 MPa or less, more preferably 70.0 MPa or less.

The generated stress σ(1) is generated when molding the sealing molding material composition of this embodiment, and during molding, the liquid composition changes into a solid (cured product). This value is the sum of the "curing shrinkage" caused by this and the stress caused by "dimensional change due to post-curing" caused by post-curing at 200° C. for 8 hours. σ(1) is irreversible residual stress. From the viewpoint of making it difficult to cause peeling between the semiconductor insert component and the cured product even if a temperature cycle test is performed using the cured product of the molding material composition for encapsulation, it is preferable that σ(1) be “0 or positive”. It is preferable to take a "value of ," and when it takes a "positive value," it is preferable that the value be as small as possible. When σ(1) takes a "positive value", it means that α is a "positive value", that is, "the dimensions are reduced compared to when molding", and this means that "the molding material composition This means that stress is applied to the object in the direction in which it is pressed against the semiconductor insert member (compressive direction). On the other hand, if σ(1) takes a "negative value", based on the same argument, the molding material composition will be "stressed in the direction of peeling off from the insert member (tensile direction)", and the compression direction This will significantly accelerate peeling compared to the stress of . Therefore, σ(1) is preferably "0 or a positive value." Specifically, the preferred range of σ(1) is preferably 30.0 MPa or less, more preferably 28.0 MPa or less, still more preferably 25.0 MPa or less, and particularly preferably 0.00 MPa. When the value of σ(1) is 30.0 MPa or less, the internal stress in the direction of compressing the cured product does not become too large, the adhesion between the semiconductor insert part and the cured product improves, and initial peeling becomes difficult to occur. be able to.
Here, in this specification, initial peeling refers to the peelability of the cured product of the molding material composition for sealing immediately after the semiconductor insert component is sealed with the cured product of the molding material composition.

Furthermore, from the viewpoint of making it difficult to cause peeling between the semiconductor insert part and the cured product after the temperature cycle test, the value of α should be "0 (zero) or a positive value" from the above discussion. Preferably, when a "positive value" is taken, the value is preferably as small as possible. Specifically, the value of α is preferably 0.00 to 0.20%, more preferably 0.00 to 0.15%. When the value of α is 0.00% or more, stress in the compressive direction acts inside the package, improving the adhesion between the semiconductor insert component and the cured product, and making it difficult to cause initial peeling. On the other hand, if the value of α is 0.20% or less, the internal stress in the direction of compressing the cured product will not become too large, the adhesion between the semiconductor insert part and the cured product will improve, and initial peeling will be less likely to occur. I can do it.
By setting the value of α within the range described above, the value of σ(1) can be set within the range described above. The value of α is set so that the linear expansion coefficient CTE1 of the molding material composition for sealing is 8 to 15 ppm/°C, more preferably 9 to 14 ppm/°C, and then This can be achieved by selecting a thermosetting resin system whose glass transition point after curing is 200°C or higher, more preferably 210°C or higher.
Note that α can be determined by the method described in Examples.

The cured product repeats reversible expansion and contraction for a while from the start of the temperature cycle test, but gradually thermal decomposition of the cured product begins and irreversible contraction of the cured product begins.
The generated stress σ(2) is a thermal stress generated during a cycle in which the cured product repeats reversible expansion and contraction from the start of the temperature cycle test, and is a reversible stress. Further, the generated stress σ(3) is a stress generated due to irreversible contraction of the cured product during 1000 cycles from the cycle when thermal decomposition of the cured product starts.
Note that the rough guideline for the cycle in which the cured product repeats reversible expansion and contraction is approximately 50 to 400 cycles from the start of the temperature cycle test, although it varies depending on the type of thermosetting resin.

When the glass transition temperature (Tg) of the cured product of the molding material composition for sealing is 200°C or more and less than 250°C, the Tg is within the temperature range of the temperature cycle test, and the value of σ(2) is , is the sum of the thermal stress generated in the region having the linear expansion coefficient CTE1 and the thermal stress generated in the region having the linear expansion coefficient CTE2. On the other hand, when the Tg is 250° C. or higher, the Tg is equal to or higher than the temperature range of the temperature cycle test, so the value of σ(2) is the thermal stress generated in the region having the coefficient of linear expansion CTE1.
The value of σ(2) is preferably 35.0 MPa or less, more preferably 30.0 MPa or less, from the viewpoint of making it difficult to cause peeling between the semiconductor insert component and the cured product even if the temperature cycle test is performed. be.

The glass transition temperature (Tg) of the cured product is preferably 200° C. or higher, more preferably 210° C. or higher, from the viewpoint of reducing the stress σ(3) generated due to thermal decomposition of the resin or the like. Note that the upper limit of the glass transition temperature may be, for example, 320°C or lower, or 310°C or lower.
The glass transition temperature (Tg) can be measured by thermal mechanical analysis (TMA), and specifically by the method described in Examples.

The linear expansion coefficient CTE1 of the cured product is preferably 8 to 15 ppm/°C, more preferably 9 to 14 ppm/°C. Further, the linear expansion coefficient CTE2 of the cured product preferably has a value as close as possible to the above CTE1 from the viewpoint of the difference in linear expansion coefficient with the semiconductor insert component, but it is preferably 75 ppm/°C or less, and 70 ppm/°C or less. It is more preferable that the temperature is below ℃.
By setting the linear expansion coefficients CTE1 and CTE2 of the cured product within the above ranges, the value of σ(2) can be set within the above ranges. The linear expansion coefficients CTE1 and CTE2 of the cured product are determined by using fused silica and/or synthetic silica as the filler, and making the content approximately 65 to 85% by mass of the entire encapsulating molding material composition. By doing so, it can be kept within the above range.

In addition, in this embodiment, the linear expansion coefficient CTE1 of the cured product can be determined from the slope of the tangent at 50 to 60 ° C. in a TMA chart obtained by measurement by thermal mechanical analysis (TMA), The linear expansion coefficient CTE2 of the cured product can be determined from the slope of the tangent at 290 to 300° C. in the TMA chart. Specifically, it can be measured by the method described in Examples.

It is preferable that σ(3) takes a value of 0 (zero) or a positive value from the viewpoint of making it difficult for peeling between the semiconductor insert component and the cured product to occur even if the temperature cycle test is performed. Specifically, it is preferably 50.0 MPa or less, more preferably 40.0 MPa or less, and 0.00 MPa. It is particularly preferable that If the value of σ(3) is 50.0 MPa or less, the internal stress in the direction of compressing the cured product will not become too large, and peeling between the semiconductor insert component and the cured product after the temperature cycle test can be made difficult to occur. .

Further, from the viewpoint of making it difficult to cause peeling between the semiconductor insert part and the cured product after the temperature cycle test, it is preferable to set σ(3) to the above value. The value of α) is preferably 0.00 to 0.40%, more preferably 0.00 to 0.30%. If the value of (β-α) is 0.00% or more, the stress inside the package will act in the compressive direction compared to the initial state (before the temperature cycle test), and the stress between the semiconductor insert part and the cured product will increase. Adhesion is improved, and peeling between the semiconductor insert component and the cured product can be made less likely to occur after the temperature cycle test.
On the other hand, when the value of (β-α) is 0.40% or less, the internal stress in the direction of compressing the cured product does not become too large, the adhesion between the semiconductor insert part and the cured product improves, and the temperature cycle Peeling between the semiconductor insert component and the cured product can be made less likely to occur after the test.
By setting the value of (β−α) within the range described above, the value of σ(3) can be set within the range described above. The value of (β-α) can be kept within the above range by setting the thermal decomposition start temperature of the cured product to preferably 350°C or higher, more preferably 360°C or higher, but some of the fillers, For example, it is particularly effective if 0.5 to 20% by mass of the filler is a hollow structure filler with an average particle size of about 3 to 100 μm.

The value of β is preferably 0.50% or less, more preferably 0.40% or less. By setting the value of β within the range described above, the value of (β−α) can be set within the range described above.
Note that β can be determined by the method described in Examples.

The storage modulus E ₂₅ of the cured product at 25° C. is preferably 8 to 15 GPa, more preferably 9 to 14 GPa. When the value of E ₂₅ is within the range described above, the values of σ(1), σ(2), and σ(3) may be each within the ranges described above.

Further, the storage modulus E ₂₅₀ of the cured product at 250° C. is preferably 2 to 10 GPa, more preferably 2 to 9 GPa. When the value of _E250 is within the range described above, the value of σ(2) may be within the range described above.
Note that the storage modulus can be measured by dynamic mechanical analysis (DMA), and specifically, by the method described in Examples.

The encapsulating molding material composition of this embodiment includes (A) a thermosetting resin, (B) a curing accelerator, and (C) a filler.

[(A) Thermosetting resin]
The thermosetting resin (A) used in this embodiment is not particularly limited, but it is preferable that it is at least two types selected from the group consisting of maleimide resin, phenol resin, epoxy resin, benzoxazine resin, and cyanate resin. It is preferable from the viewpoints of properties, adhesion, and moldability.

The maleimide resin is not particularly limited as long as it is a compound containing two or more maleimide groups in one molecule, but a compound represented by the following general formula (I) is preferred. A maleimide resin is a resin that forms a three-dimensional network structure by reacting maleimide groups when heated, and is cured. Further, the maleimide resin imparts a high glass transition temperature (Tg) to the cured product through a crosslinking reaction, thereby improving heat resistance and heat decomposition resistance.

In the general formula (I), each R ¹ independently represents a hydrocarbon group having 1 to 10 carbon atoms, and the hydrocarbon group may be substituted with a halogen atom. p is each independently an integer of 0 to 4, and q is an integer of 0 to 3.
Examples of the hydrocarbon group having 1 to 10 carbon atoms include alkyl groups such as methyl group, ethyl group, propyl group, butyl group, pentyl group, hexyl group, and heptyl group; chloromethyl group, 3-chloropropyl group, etc. Substituted alkyl groups; alkenyl groups such as vinyl, allyl, butenyl, pentenyl and hexenyl groups; aryl groups such as phenyl, tolyl and xylyl groups; monovalent such as aralkyl groups such as benzyl and phenethyl groups; hydrocarbon groups.
Moreover, when a plurality of R ^1s exist, the plurality of R ^1s may be the same or different from each other.
z is an integer from 0 to 10, preferably from 0 to 4.

The maleimide resin represented by the general formula (I) was compared at a temperature of 170° C. or higher in the presence of at least one selected from the group consisting of phenol resins and benzoxazine resins and (B) a curing accelerator described below. It easily carries out an addition reaction and imparts high heat resistance to the cured product of the molding material composition for sealing.

Specific examples of the maleimide resin represented by the general formula (I) include N,N'-(4,4'-diphenylmethane)bismaleimide, bis(3-ethyl-5-methyl-4-maleimidophenyl) ) Methane, polyphenylmethane maleimide, etc.
The maleimide resin is, for example, N,N'-(4,4'-diphenylmethane)bismaleimide with z=0 as the main component, BMI-70 (manufactured by K.I. Kasei Co., Ltd.). , BMI-1000 (manufactured by Daiwa Kasei Kogyo Co., Ltd.), BMI-2300 (manufactured by Daiwa Kasei Kogyo Co., Ltd.), which is polyphenylmethane maleimide whose main component is z = 0 to 2, etc. are available as commercial products. can.

As the maleimide resin, a maleimide resin represented by the general formula (I) and a maleimide resin other than the maleimide resin represented by the general formula (I) may be used in combination. Examples of maleimide resins that can be used in combination include m-phenylenebismaleimide, 2,2-bis[4-(4-maleimidophenoxine)phenyl]propane, 1,6-bismaleimide-(2,2,4-trimethyl ) hexane, etc. Conventionally known maleimide resins other than these may be used in combination. In addition, when blending a maleimide resin other than the maleimide resin represented by the general formula (I), the blending amount is preferably 30 parts by mass per 100 parts by mass of the maleimide resin represented by the general formula (I). parts, more preferably 20 parts by mass or less.

As the phenolic resin, as long as it has two or more phenolic hydroxyl groups per molecule, it is not limited by molecular structure, molecular weight, etc., and any resin that is generally used as a sealing material for electronic components can be widely used. I can do it. Examples of the phenolic resin include phenol novolak resin, phenol xylene resin, cresol novolac resin, aralkyl type phenol resin, cyclopentadiene type phenol resin, triphenolalkane type phenol resin, triphenylmethane type phenol resin, naphthalene type phenol resin, and biphenyl. Examples include type phenolic resins. Among these, triphenylmethane type phenol resins and naphthalene type phenol resins are preferred from the viewpoint of glass transition temperature (Tg), and biphenyl type phenol resins are preferred from the viewpoint of thermal decomposition. These may be used alone or in combination of two or more.

The softening point of the phenol resin is preferably 55 to 120°C, more preferably 60 to 110°C, from the viewpoint of productivity and flow characteristics of the encapsulating molding material composition.
In addition, the softening point in this specification refers to a "ring and ball softening point" and refers to a value measured in accordance with ASTM D36.

The triphenylmethane type phenol resin is preferably a phenol resin having a triphenylmethane skeleton represented by the following general formula (II), and the naphthalene type phenol resin is preferably a naphthalene resin represented by the following general formula (III). A phenolic resin having a skeleton is preferred.

(In the formula, x is 0 to 10.)

(In the formula, y1 is 0 to 10.)

In the general formula (II), x is 0 to 10, preferably 1 to 4. Further, in the general formula (III), y1 is 0 to 10, preferably 0 to 3.

The phenol resin represented by the general formula (II) is MEH-7500 (manufactured by Meiwa Kasei Co., Ltd.), and the phenol resin represented by the general formula (III) is SN-485 (made by Nippon Steel & Sumikin Chemical Co., Ltd.). ), and the biphenyl phenol resin is available as MEH-7851 (manufactured by Meiwa Kasei Co., Ltd.) as commercial products.

As the epoxy resin, as long as it has two or more epoxy groups in one molecule, any resin that is generally used as a sealing material for electronic components may be used without being restricted by molecular structure, molecular weight, etc. I can do it. Examples of the epoxy resin include biphenyl type epoxy resin, cresol novolac type epoxy resin, phenol novolac type epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, dicyclopentadiene type epoxy resin, Heterocyclic epoxy resins such as phenylmethane type epoxy resins, triphenolmethane type epoxy resins, triazine nucleus-containing epoxy resins, stilbene type bifunctional epoxy resins, naphthalene type epoxy resins, dihydroxynaphthalene novolak type epoxy resins, condensed ring aromatic carbonization Examples include hydrogen-modified epoxy resins and alicyclic epoxy resins. Among these, triphenylmethane type epoxy resins and naphthalene type epoxy resins are preferred from the viewpoint of glass transition temperature (Tg), and biphenyl type epoxy resins are preferred from the viewpoint of thermal decomposition.
These epoxy resins may be used alone or in combination of two or more.

The softening point of the epoxy resin is preferably 40 to 130°C, more preferably 50 to 110°C, from the viewpoint of improving productivity and fluidity of the encapsulating molding material composition.

The triphenylmethane type epoxy resin is preferably an epoxy resin having a triphenylmethane skeleton represented by the following general formula (IV), and the naphthalene type epoxy resin is preferably an epoxy resin having a triphenylmethane skeleton represented by the following general formula (V) or (VI). Epoxy resins having the naphthalene skeleton as shown are preferred.

(In the formula, n1 is 0 to 10.)

(In the formula, n2 is 0 to 10.)

In the general formula (IV), n1 is 0 to 10, preferably 0 to 3. Further, in the general formula (V), n2 is 0 to 10, preferably 0 to 3.

The epoxy resin represented by the general formula (IV) is EPPN-502H (manufactured by Nippon Kayaku Co., Ltd.), and the epoxy resin represented by the general formula (V) is ESN-375 (manufactured by Nippon Steel & Sumikin Chemical Co., Ltd.). The epoxy resin represented by the general formula (VI) is HP-4710 (manufactured by DIC Corporation), and the biphenyl epoxy resin is NC-3000 (manufactured by Nippon Kayaku Co., Ltd.). (manufactured by) and can be obtained as commercial products.

The benzoxazine resin has two or more benzoxazine rings in one molecule and may be a polymerizable compound, and is not particularly limited, but from the viewpoint of glass transition temperature (Tg), it may be a compound represented by the following general formula (VII). The compounds represented are preferred.

In the general formula (VII), X1 is an alkylene group having 1 to 10 carbon atoms, an oxygen atom, or a direct bond. R ² and R ³ are each independently a hydrocarbon group having 1 to 10 carbon atoms.

The alkylene group of X1 has 1 to 10 carbon atoms, preferably 1 to 3 carbon atoms. Specific examples of the alkylene group include methylene group, ethylene group, propylene group, butylene group, pentylene group, hexylene group, heptylene group, octylene group, and the like. Among them, methylene group, ethylene group, and propylene group are preferable, and methylene group is particularly preferable.

Examples of the hydrocarbon group having 1 to 10 carbon atoms for R ² and R ³ include alkyl groups such as methyl group, ethyl group, propyl group, butyl group, pentyl group, hexyl group, and heptyl group; vinyl group, allyl group; , alkenyl groups such as butenyl, pentenyl, and hexenyl; aryl groups such as phenyl, tolyl, and xylyl; and monovalent hydrocarbon groups such as aralkyl groups such as benzyl and phenethyl.
Moreover, when a plurality of R ² and R ³ exist, the plurality of R ² and the plurality of R ³ may be the same or different, respectively.

m1 is each independently an integer of 0 to 4, preferably an integer of 0 to 2, and more preferably 0. m2 is each independently an integer of 0 to 4, preferably an integer of 0 to 2, and more preferably 0.

Specific examples of the benzoxazine resin represented by the general formula (VII) include resins shown by the following formulas (VII-1) to (VII-4). These resins may be used alone or in combination of two or more.

The benzoxazine resin is preferably a benzoxazine resin represented by the formula (VII-1). Further, the content of the benzoxazine resin represented by the formula (VII-1) in the benzoxazine resin represented by the general formula (VII) is preferably 50 to 100% by mass, more preferably 60 to 100% by mass. %, more preferably 70 to 100% by mass.

The benzoxazine resin represented by the formula (VII-1) can be obtained as a commercial product such as Benzoxazine P-d (manufactured by Shikoku Kasei Kogyo Co., Ltd.).

Examples of the cyanate resin include cyanate ester monomers having at least two cyanate groups in one molecule (hereinafter also simply referred to as cyanate ester monomers). The cyanate ester monomer is particularly advantageous in terms of adhesion.
In addition, in this embodiment, a "cyanate ester monomer" refers to a cyanate ester compound that does not contain a structure in which part of the molecular structure is repeated in the molecule.

The cyanate ester monomer is not particularly limited as long as it has at least two cyanate groups in one molecule. For example, bis(4-cyanatophenyl)methane, 1,1-bis(4-cyanatophenyl)ethane, 2,2-bis(4-cyanatophenyl)propane, bis(3-methyl-4-cyanatophenyl)methane, Compounds with two cyanate groups in one molecule, such as bis(3,5-dimethyl-4-cyanatophenyl)methane, bis(3,5-dimethyl-4-cyanatophenyl)-4-cyanatophenyl-1,1 Examples include compounds having three cyanate groups in one molecule, such as , 1-ethane. Conventionally known compounds other than these may also be used.

Specific examples of the cyanate ester monomer include Primaset LECy (manufactured by Lonza Japan Co., Ltd.) containing 1,1-bis(4-cyanatophenyl)ethane as a main component, 2,2-bis(4-cyanatophenyl) ) CYTESTER (registered trademark) TA (manufactured by Mitsubishi Gas Chemical Co., Ltd.) containing propane as a main component can be obtained as a commercial product.

The thermosetting resin (A) may be a thermosetting resin other than the aforementioned maleimide resin, phenol resin, epoxy resin, benzoxazine resin, and cyanate resin, as long as the effects of the present invention are not impaired. . For example, when using a cyanate ester monomer as the thermosetting resin (A), a cyanate ester resin containing a repeating structure in the molecule, such as a novolac type cyanate ester, can be used in combination.
When a maleimide resin, a phenol resin, an epoxy resin, a benzoxazine resin, and a cyanate resin are used together with a thermosetting resin other than these resins as the (A) thermosetting resin, (A) the thermosetting resin The content of maleimide resin, phenol resin, epoxy resin, benzoxazine resin, and cyanate resin based on the total amount is preferably 80% by mass or more, more preferably 90% by mass or more, and still more preferably 95% by mass or more.

Further, the content of the thermosetting resin (A) is preferably 10 to 30% by mass, more preferably 15 to 25% by mass, based on the total amount of the encapsulating molding material composition. (A) When the content of the thermosetting resin is 10% by mass or more, it is possible to ensure moldability such as flow characteristics, and when it is 30% by mass or less, insulation properties such as flame retardancy and tracking resistance can be ensured. It becomes possible to secure the following.

[(B) Curing accelerator]
The curing accelerator (B) used in this embodiment is not particularly limited, and a wide variety of curing accelerators commonly used as sealing materials for electronic components can be used. (B) Examples of the curing accelerator include (b-1) a phosphorus-based curing accelerator, and (b-2) an imidazole-based curing accelerator. It is preferable to use them together.
In this embodiment, the term "imidazole curing accelerator" has the same meaning as an imidazole compound containing nitrogen atoms at the 1st and 3rd positions on a 5-membered ring.

The (b-1) phosphorus-based curing accelerator mainly performs a crosslinking reaction between the maleimide resin and the phenol resin and/or benzoxazine resin, and a crosslinking reaction between the phenol resin and/or benzoxazine resin and the epoxy resin. reaction and the trimerization reaction of the cyanate resin. (b-1) The phosphorus-based curing accelerator promotes these reactions, thereby indirectly reducing the self-polymerization reaction between the maleimide resins and suppressing the generation of peeling stress with the semiconductor insert component. have

Examples of the phosphorus curing accelerator (b-1) include triphenylphosphine, tris(4-methylphenyl)phosphine, tris(4-ethylphenyl)phosphine, tris(4-propylphenyl)phosphine, tris( Tertiary phosphines such as 4-butylphenyl)phosphine, tris(2,4-dimethylphenyl)phosphine, tris(2,4,6-trimethylphenyl)phosphine, tributylphosphine, methyldiphenylphosphine, tetraphenylphosphonium tetraphenylborate , tetra-substituted phosphonium tetra-substituted borates such as tetrabutylphosphonium tetrabutylborate, etc., and these can be used individually or in combination of two or more types as appropriate. It is also possible to use conventionally known phosphorus curing accelerators other than these alone or in combination of two or more.

The imidazole curing accelerator (b-2) mainly has the function of promoting the self-polymerization reaction of the maleimide resin and improving the moldability of the encapsulating molding material composition. Further, the function of the imidazole curing accelerator (b-2) is promoted by the presence of the epoxy resin, and it is possible to impart good curability and moldability to the encapsulating molding material composition of this embodiment. becomes.

Examples of the imidazole curing accelerator (b-2) include 2-methylimidazole, 2-ethylimidazole, 2,4-dimethylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, and 2-phenyl. -4-methylimidazole, 2-phenyl-4,5-dihydroxymethylimidazole, 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazine, 2-phenyl-4 Examples include -methyl-5-hydroxymethylimidazole, which may be used alone or in combination of two or more. Furthermore, conventionally known imidazole curing accelerators other than those mentioned above may be used.

The imidazole curing accelerator (b-2) can be appropriately selected and used depending on the need. From the viewpoint of the moldability of the encapsulating molding material composition and the balance of adhesion between the cured product of the composition and the semiconductor insert component, 2,4-diamino-6-[2'-methylimidazolyl-(1' )]-Ethyl-s-triazine, 2-phenyl-4-methyl-5-hydroxymethylimidazole, and the like are preferably used alone or in combination of two or more compounds having a relatively high activation temperature. Specifically, the reaction initiation temperature when the imidazole curing accelerator (b-2) is reacted with bisphenol A type epoxy resin (liquid) at a mass ratio of 1/20 is preferably 5°C. The temperature is 100°C or higher and lower than 160°C, more preferably 100°C or higher and lower than 150°C. The imidazole curing accelerator (b-2) may be used alone or in combination of two or more.
In addition, here, the reaction initiation temperature is the temperature when a composition containing (b-2) an imidazole curing accelerator and a bisphenol A epoxy resin is heated at a temperature increase rate of 10° C./min using DSC. In the rising curve of an exothermic or endothermic peak, it refers to the temperature at the intersection of the tangent to the steepest part of the peak and the temperature axis.
If the reaction initiation temperature of the imidazole curing accelerator (b-2) is 85°C or higher, peeling from the semiconductor insert component can be reduced, and if it is lower than 175°C, the molding material composition for sealing can be reduced. The moldability of the material can be improved.

The content of the curing accelerator (B) is preferably 0.1 to 1.0% by mass, more preferably 0.1 to 0.5% by mass, based on the total amount of the encapsulating molding material composition. (B) If the curing accelerator content is 0.1% by mass or more, moldability of the encapsulating molding material composition can be ensured, and if it is 1.0% by mass or less, fluidity can be ensured. It becomes possible.

In addition, when the (b-1) phosphorus curing accelerator and the (b-2) imidazole curing accelerator are used together as the (B) curing accelerator, the (b-1) phosphorus curing accelerator The content ratio [(b-1)/(b-2)] of the above (b-2) imidazole curing accelerator is preferably 3/1 to 1/3, more preferably 2 /1 to 1/3, more preferably 2/1 to 1/2. If there is a large amount of component (b-1), the moldability may be insufficient, and if there is a large amount of component (b-2), the adhesion between the cured product of the encapsulating molding material composition and the semiconductor insert component may be insufficient. be.

[(C) Filler]
The filler (C) used in this embodiment is not particularly limited, and conventionally known fillers can be used. (C) Fillers include (c-1) inorganic fillers, (c-2) hollow structure fillers, and (c-3) organic fillers, especially when dimensional changes occur during temperature cycle tests. From the viewpoint of reducing generated stress σ(3), (c-1) inorganic filler and (c-2) hollow structure filler are used together, or (c-1) inorganic filler and (c-3) organic filler are used together. It is preferable to use these materials together. (c-1) Inorganic filler, (c-2) hollow structure filler, and (c-3) organic filler may all be filled.
In addition, in this embodiment, a "hollow structure filler" refers to a filler that has one or more hollow structures inside the filler.

Examples of the (c-1) inorganic filler (excluding silicone powder as a low stress agent (D) described below) include crystalline silica, fused silica, synthetic silica, alumina, aluminum nitride, boron nitride, and zircon. , calcium silicate, calcium carbonate, barium titanate, and the like. From the viewpoint of fluidity and reliability, crystalline silica, fused silica, and synthetic silica are preferred, and it is particularly preferred that fused spherical silica or synthetic silica be the main component.

The average particle diameter of the inorganic filler (c-1) is preferably 5 to 30 μm, more preferably 6 to 25 μm, and still more preferably 8 to 20 μm. When the average particle diameter is 5 μm or more, moldability can be improved, and when it is 30 μm or less, mechanical strength can be improved.
In addition, in this specification, the average particle diameter refers to the median value (D50) measured by a laser diffraction scattering method (for example, manufactured by Shimadzu Corporation, device name: SALD-3100).

The content of the (c-1) inorganic filler is preferably 70 to 100% by mass, more preferably 80 to 99% by mass, based on the total amount of the (C) filler, from the viewpoint of linear expansion coefficient, mechanical strength, etc. More preferably, it is 90 to 99% by mass.

The (c-2) hollow structure filler reduces the (initial) generated stress σ(1) that occurs due to dimensional changes (molding shrinkage rate) accompanying the curing of the sealing molding material composition, and By reducing the shrinkage rate β after being left for 500 hours, it is also effective to suppress the generated stress σ(3).

The (c-2) hollow structure filler is not particularly limited, and may include inorganic hollow structures such as so-called hollow glass and hollow silica whose main components are soda lime glass, borosilicate glass, aluminum silicate, mullite, quartz, etc. The filler is a silicone-based hollow structure filler whose main component is a silicone compound such as a silsesquioxane compound that has a three-dimensional network cross-linked structure represented by (CH ₃ SiO _3/2 ) _n. be able to.
Note that the term "silsesquioxane compound" as used herein refers to a compound having a structure in which siloxane bonds are crosslinked in a three-dimensional network represented by (CH ₃ SiO _3/2 ) _n , and has a methyl group or a phenyl group in the side chain. Among compounds having an organic functional group such as a group, it refers to a compound in which 80% or more of the side chains are methyl groups.
Among the above-mentioned "hollow structure fillers," especially inorganic hollow structure fillers and silicone hollow structure fillers have high heat resistance of the hollow structure fillers themselves, so they can be used as sealing molding material compositions with higher heat resistance. It can be used for things.

The elastic modulus of the hollow structure filler (c-2) is preferably 0.1 to 15 GPa, more preferably 0.2 to 12 GPa. Among them, inorganic hollow structural fillers such as hollow glass and hollow silica, which have a relatively high modulus of elasticity, have a relatively high effect of suppressing shrinkage of the sealing resin during curing, and have a high effect of suppressing stress generated during curing. Therefore, it is preferable. Further, a silicone-based hollow structure filler having a relatively low elastic modulus is preferable because it can lower the elastic modulus of the sealing material by adding a small amount and has a high stress relaxation effect during thermal contraction. When inorganic hollow structure fillers such as hollow glass and hollow silica are used in combination with silicone hollow structure fillers, even when added in a relatively small amount, the effect of suppressing peeling from semiconductor insert parts is high, and high heat resistance is required. It is also applicable to the sealing resin used in this embodiment, and is uniform in this embodiment.
The elastic modulus of the hollow structure filler (c-2) in this embodiment can be measured using, for example, a dynamic ultra-microhardness meter.

(c-2) The hollow structure filler contains at least one selected from silica, alumina, and silica-alumina compounds, especially from the viewpoint of suppressing stress σ (3) generated due to dimensional changes during temperature cycle tests. Inorganic hollow structure fillers and/or silicone hollow structure fillers containing a silsesquioxane compound are preferable, and in particular, inorganic hollow structure fillers containing at least one selected from silica-alumina compounds and alumina. More preferably, it is a structural filler.

The hollow structure filler (c-2) that can be suitably used in this embodiment preferably does not contain an alkali metal and/or an alkaline earth metal from the viewpoint of reducing corrosion of the semiconductor insert due to ionic impurities. If contamination cannot be prevented, it is preferable to reduce it as much as possible.

(c-2) The hollow structure filler contains at least one selected from silica, alumina, and silica-alumina compounds, and has a low content of alkali metals, alkaline earth metals, etc., such as silicic acid It is available on the market as Kainospheres (manufactured by Kansai Matek Co., Ltd., trade name), which is mainly composed of aluminum and mullite (a compound of silica and alumina), and Esphere (manufactured by Taiheiyo Cement Co., Ltd., trade name). be. In addition, as a silicone-based hollow structure filler containing a silsesquioxane compound (silsesquioxane compound-based filler), for example, NH-SBN04 (Nikko Rica Co., Ltd.) whose main component is polymethylsilsesquioxane is used. It is available on the market as a product, product name), etc.

(c-2) The hollow structure filler has an average particle diameter of 3 to 100 μm from the viewpoint of reducing peeling from the semiconductor insert component and achieving productivity and moldability of the encapsulating molding material composition. The thickness is preferably 3 to 60 μm, more preferably 3 to 60 μm. If the average particle size is 3 μm or more, peeling will be reduced, and if the average particle size is 100 μm or less, the productivity and moldability of the sealing molding material composition will be good.

As the hollow structure filler with an average particle size of 3 to 100 μm, Kainospheres 75 (average particle size 35 μm) as the above-mentioned Kainospheres (manufactured by Kansai Matek Co., Ltd., trade name) series, Esphere (Taiheiyo Cement Co., Ltd. ), product name) series such as Y's Spears SL75 (average particle size 55 μm) and Y's Spears SL125 (average particle size 80 μm) are available on the market. In addition, Glass Bubbles K37 (average particle diameter 45 μm), Glass Bubbles iM30K (average particle diameter 16 μm) (manufactured by 3M Japan Ltd.), NH-SBN04 (average particle diameter 4 μm, manufactured by Nikko Rica Ltd.), etc. are also available on the market.

When the molding material composition for sealing of the present embodiment contains (c-2) hollow structure filler, the content thereof is preferably 0.5 to 30% by mass based on the total amount of (C) filler, More preferably 1 to 20% by weight, still more preferably 1 to 10% by weight. (c-2) If the content of the hollow structure filler is 0.5% by mass or more, peeling from the semiconductor insert component will be reduced, especially due to the effect of reducing the generated stress σ (3), and even if the content is 20% by mass or less, In addition to improving moldability and insulation properties, it is possible to prevent a decrease in thermal conductivity. In particular, when the (c-2) hollow structure filler contains a silsesquioxane compound, the content is preferably 0.5 to 10% by mass, more preferably 1 to 6% by mass, based on the total amount of the (C) filler. The amount is preferably 1.2 to 5% by weight.

Examples of the organic filler (c-3) include resin fillers, fibrous fillers, and the like. Examples of resin fillers include those made of cellulose, nylon, polyethylene, polypropylene, polystyrene, polyphenylene ether resin, tetrafluoroethylene resin, and the like. The resin filler may have a core-shell structure. Examples of fibrous fillers include polyester fibers, aramid fibers, cellulose fibers, and the like. Among them, from the viewpoint of reducing thermal stress, it is preferable that the organic filler (c-3) has high crystallinity and does not have a melting point or softening point in a temperature range up to 250°C. Specifically, (c-3) the organic filler preferably contains a cellulose component.

When the molding material composition for sealing of the present embodiment contains (c-3) an organic filler, the content thereof is preferably 0.03 to 1.5% by mass based on the total amount of the molding material composition, The amount is more preferably 0.05 to 1.0% by weight, and even more preferably 0.1 to 0.5% by weight. When it is 0.03% by mass or more, a sufficient effect of reducing thermal stress can be obtained, and when it is 1.5% by mass or less, the fluidity of the sealing molding material composition can be improved.

Furthermore, the average particle size of the organic filler (c-3) is preferably 0.1 to 150 μm, more preferably 0.5 to 100 μm, and even more preferably 1 to 75 μm. (c-3) The shape of the organic filler is not limited and may be fibrous or amorphous. In the case of fibrous or amorphous particles, it is preferable that the average value of the length (major axis) of the longest part of each particle falls within the above range. When the average particle size is 0.1 μm or more, the fluidity of the sealing molding material composition can be improved, and when it is 150 μm or less, a sufficient effect of reducing thermal stress can be obtained.

(c-3) The organic filler preferably contains as few ionic impurities as possible from the viewpoint of electrical reliability.
(c-3) The organic filler may be added as is or may be premixed with part or all of the thermosetting resin (A) before being added. (c-3) The organic filler is available on the market as KC Flock (registered trademark) W-50GK (manufactured by Nippon Paper Industries Co., Ltd., trade name, average particle size 45 μm).

In the present invention, it is more effective if (c-3) the organic filler is stirred and mixed with the silane coupling agent and then premixed with part or all of the (A) thermosetting resin. .
Examples of silane coupling agents include epoxysilanes such as 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropyltriethoxysilane, 2-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, and 3-glycidoxypropyltrimethoxysilane; Aminosilanes such as aminopropyltrimethoxysilane, N-phenyl-3-aminopropyltrimethoxysilane, N-2-(aminoethyl)-3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane; 3-mercaptopropyl Examples include mercaptosilanes such as trimethoxysilane; isocyanatesilanes such as 3-isocyanatepropyltriethoxysilane; in addition to these, conventionally known silane coupling agents can be used as appropriate.
(c-3) From the viewpoint of dispersibility of organic filler in (A) thermosetting resin, 2-(3,4-epoxycyclohexyl)ethyltrimethoxysilane and N-phenyl-3-aminopropyltri Silane coupling agents having an aliphatic ring or an aromatic ring in the molecule, such as methoxysilane, are preferred.

As a method of premixing part/or all of the silane coupling agent, (c-3) organic filler, and part/or all of (A) thermosetting resin, for example, (c-3) organic filler The mixing ratio of the material and a part of the silane coupling agent was set to 50/1 to 2/1 in terms of mass ratio, and the mixture was stirred at room temperature (25°C) for about 1 to 30 minutes, and then (A) heated. Mix (A) thermosetting resin so that the ratio of part of the curable resin and (c-3) organic filler is 100/1 to 10/1 by mass; Examples of possible methods include stirring and mixing at a temperature higher than the melting point or softening point, for example 70 to 180° C., for about 10 minutes to 1 hour.
Conventionally known mixing devices may be used. The silane coupling agent and (A) thermosetting resin may be used alone or in combination of two or more.

Further, the content of the filler (C) is preferably 60 to 90% by mass, more preferably 65 to 85% by mass, and even more preferably 70 to 80% by mass, based on the total amount of the encapsulating molding material composition. It is. (C) When the content of the filler is 60% by mass or more, it becomes possible to secure the difference in linear expansion coefficient necessary for ensuring mechanical strength and suppressing peeling from the semiconductor insert component, and the content is 90% by mass or less. This makes it possible to ensure moldability such as flow characteristics.

The encapsulating molding material composition of the present embodiment preferably further contains (D) a low stress agent from the viewpoint of reducing peeling from the semiconductor insert component. (D) Low stress agents include silicone compounds such as silicone powder, silicone oil, and silicone rubber; polybutadiene compounds; acrylonitrile-butadiene copolymer compounds such as acrylonitrile-carboxyl group-terminated butadiene copolymer compounds, and the like. Among these, silicone powder whose main component is polymethylsilsesquioxane or the like, which has relatively high heat resistance, is preferred. These may be used alone or in combination of two or more.

The average particle diameter of the silicone powder is preferably 0.5 μm or more and less than 5 μm, more preferably 1 μm or more and 4 μm or less.

The viscosity of the silicone oil at 25° C. is preferably 500 mm ² /s or less, more preferably 400 mm ² /s or less, and even more preferably 200 mm ² /s or less. If the viscosity at 25° C. is 500 mm ² /s or less, (c-3) the dispersibility in the organic filler will be good. The lower limit of the viscosity at 25° C. is not particularly limited, but may be 10 mm ² /s or more.
The silicone oil may or may not have a functional group, but when it has a functional group, it is preferably a functional group that does not have reactivity with the silane coupling agent. When the functional groups of silicone oil have reactivity with the silane coupling agent, there is a possibility that the molecular weight increases due to the crosslinking reaction and the fluidity of the viscosity deteriorates.

In the present invention, (c-3) organic filler is stirred and mixed with a mixture of a silane coupling agent and silicone oil, and then premixed with part or all of (A) thermosetting resin and added. Then, it will be even more effective.
The silane coupling agent and silicone oil are particularly effective when selected in a combination that satisfies the above requirements and forms an emulsion with each other. As a combination of a silane coupling agent and silicone oil that forms an emulsified dispersion while satisfying the above requirements, for example, an epoxy silane such as 3-glycidoxypropyltrimethoxysilane or 3-glycidoxypropyltriethoxysilane, An example is a combination with dimethyl silicone modified with epoxy at both ends. These are KBM-403 (3-glycidoxypropyltrimethoxysilane, manufactured by Shin-Etsu Chemical Co., Ltd., trade name), KF-105 (dimethyl silicone modified with epoxy at both ends, manufactured by Shin-Etsu Chemical Co., Ltd., trade name). , viscosity 15 mm ² /s at 25°C), etc.
The mixing ratio of the silane coupling agent and silicone oil is not particularly limited, but may be, for example, 10/1 to 1/10 in mass ratio. The mixture of the silane coupling agent and silicone oil and (c-3) the organic filler are stirred and premixed with (A) the thermosetting resin after mixing. The mixing ratio with the agent may be as described above.

When using the low stress agent (D), the content of the low stress agent (D) is preferably 0.5 to 10% by mass, more preferably 1 to 6% by mass based on the total amount of the encapsulating molding material composition. Mass%. (D) When the content of the low stress agent is 0.5% by mass or more, it is effective in suppressing peeling from the viewpoint of reducing the elastic modulus and improving adhesion, and when it is 10% by mass or less, the flow properties etc. It can prevent sexual deterioration.

The encapsulating molding material composition of this embodiment preferably contains a silane coupling agent from the viewpoints of moisture resistance, mechanical strength, adhesion to semiconductor insert parts, and the like. In this embodiment, epoxysilanes such as 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropyltriethoxysilane; 3-aminopropyltrimethoxysilane, N-phenyl-3-aminopropyltrimethoxysilane, N- Aminosilanes such as -2-(aminoethyl)-3-aminopropyltrimethoxysilane and 3-aminopropyltriethoxysilane; Mercaptosilanes such as 3-mercaptopropyltrimethoxysilane; Isocyanates such as 3-isocyanatepropyltriethoxysilane Conventionally known silane coupling agents such as silane can be used as appropriate. From the viewpoint of adhesion, it is preferable to use epoxysilanes such as 3-glycidoxypropyltrimethoxysilane and 3-glycidoxypropyltriethoxysilane, secondary aminosilanes, isocyanatesilanes, etc. alone or in combination. . Note that the silane coupling agent may be used by simply mixing with the filler (C), or a part or the entire amount thereof may be surface-treated in advance. Further, an aluminate-based coupling agent or a titanate-based coupling agent may be contained within a range that does not impede the effects of this embodiment.

The content of the silane coupling agent is preferably 0.01 to 1% by mass, more preferably 0.03 to 0.7% by mass, and even more preferably 0.05% by mass based on the total amount of the encapsulating molding material composition. ~0.5% by mass. By setting the content of the silane coupling agent to 0.01% by mass or more, it is possible to improve the adhesion with the semiconductor insert part, and by setting the content to 1% by mass or less, the decrease in curability during molding can be prevented. can be reduced.

The molding material composition for sealing of this embodiment may further contain a mold release agent in order to realize good productivity. Examples of mold release agents that can be added include natural waxes such as carnauba wax, fatty acid ester waxes, fatty acid amide waxes, non-oxidized polyethylene mold release agents, oxidized polyethylene mold release agents, and silicone mold release agents. etc. can be mentioned. A mold release agent other than these may be added. Moreover, the mold release agent may be used alone or in combination of two or more types.

In addition to the above-mentioned components, the encapsulating molding material composition of the present embodiment includes a flame retardant, a coloring agent such as carbon black, organic dye, titanium oxide, red iron oxide, etc., which are generally added to this type of composition. A thermoplastic resin, an ion trapping agent, an antifoaming agent, etc. can be added as necessary.

In the encapsulating molding material composition of the present embodiment, the content of the (A) thermosetting resin, (B) curing accelerator, and (C) filler is preferably 80% by mass or more, more preferably It is 90% by mass or more, more preferably 95% by mass or more.

The molding material composition for sealing of this embodiment can be prepared by uniformly dispersing and mixing a mixture of the above-mentioned components in predetermined amounts. The preparation method is not particularly limited, but as a general method, for example, a predetermined amount of each of the above components is thoroughly mixed using a mixer, then melt-mixed using a mixing roll, an extruder, etc., and then cooled. , pulverization method can be mentioned.

The molding material composition for sealing obtained in this way has a high glass transition temperature (Tg) and a high thermal decomposition start temperature, and is excellent in heat resistance. It also has excellent adhesion to semiconductor insert parts, and even after a temperature cycle test. A cured product that is less likely to peel off from the semiconductor insert component can be obtained.
The thermal decomposition start temperature of the cured product of the molding material composition for sealing is preferably higher than 350°C, more preferably 355°C or higher.
Further, the adhesive strength of the cured product of the molding material composition for sealing is preferably 5 MPa or more, more preferably 6 MPa or more.
The thermal decomposition start temperature and adhesive strength of the cured product can both be measured by the methods described in Examples.

(Electronic component equipment)
The electronic component device of this embodiment includes an element sealed with a cured product of the molding material composition for sealing. The electronic component device includes lead frames, supporting members such as single crystal silicon semiconductor elements or SiC, Ga ₂ O ₃ , GaN, and diamond elements, members such as wires and bumps for electrically connecting these elements, and others. This refers to an electronic component device in which necessary parts of a set of constituent members are sealed with a cured product of the sealing molding material composition. Particularly when SiC, Ga ₂ O ₃ , GaN, and diamond elements are used as the supporting member, the electronic component device sealed with the cured product of the molding material composition for sealing has good characteristics.

Transfer molding is the most common method for sealing using the sealing molding material composition of this embodiment, but injection molding, compression molding, etc. may also be used.
The molding temperature may be 150 to 250°C, 160 to 220°C, or 170 to 200°C. The molding time may be 30 to 600 seconds, 45 to 300 seconds, or 60 to 250 seconds. Further, in the case of post-curing, the heating temperature is not particularly limited, but may be, for example, 150 to 250°C or 180 to 220°C. Further, the heating time is not particularly limited, but may be, for example, 0.5 to 10 hours, or 1 to 8 hours.

EXAMPLES Next, the present invention will be specifically explained with reference to Examples, but the present invention is not limited to these Examples in any way.

(Examples 1 to 14 and Comparative Examples 1 to 6)
Each component having the types and amounts listed in Tables 1 and 2 was kneaded using a mixing twin-screw roll to prepare a molding material composition for sealing. The kneading temperature in each Example and Comparative Example was set at 80 to 100°C. Note that blank columns in Tables 1 and 2 represent no formulation.

(Example 15)
(c-3) 2.5 parts by mass of KC Flock (registered trademark) W-50GK (manufactured by Nippon Paper Industries Co., Ltd.) as an organic filler, KBM-403 (manufactured by Shin-Etsu Chemical Co., Ltd.) as a silane coupling agent 0 .25 parts by mass and 0.5 parts by mass of KF-105 (manufactured by Shin-Etsu Chemical Co., Ltd.) as silicone oil (mass ratio 10/1/2), and further stirred and mixed at room temperature (25°C) for 5 minutes. This was used as component (E-1). Next, (A) thermosetting resins BMI-80 (manufactured by K-I Kasei Co., Ltd.) and EPPN-502H (manufactured by Nippon Kayaku Co., Ltd.) were added to the (E-1) component. 80/EPPN-502H/((c-3) component in (E-1) component) = 20/70/2.5 (mass ratio), and further stirred and mixed at 150 ° C. for 30 minutes. This was used as a premix. To the obtained premix were added (A) thermosetting resins BMI-2300 (manufactured by Daiwa Kasei Kogyo Co., Ltd.) and SN-485 (manufactured by Nippon Steel & Sumikin Chemical Co., Ltd.), and (B) 2P4MHZ- as a curing accelerator. PW (manufactured by Shikoku Kasei Kogyo Co., Ltd.), (c-1) FB-105 (manufactured by Denki Kagaku Kogyo Co., Ltd.) as an inorganic filler, and (c-2) Espears SL75 (Taiheiyo Cement (Taiheiyo Cement) as a hollow structure filler. (D) silicone powder (EP-5518, manufactured by Dow Corning Toray Industries, Inc.) as a low stress agent, KBM-403 as a silane coupling agent, and HW-4252E (Mitsui Chemicals, Inc.) as a mold release agent. ) were mixed in the amounts shown in Table 1 and kneaded using a twin-screw mixing roll to prepare a molding material composition for sealing in Example 15.

(Example 16)
(c-3) 5 parts by mass of KC Flock (registered trademark) W-50GK (manufactured by Nippon Paper Industries Co., Ltd.) as an organic filler, and 0.5 parts by mass of KBM-403 (manufactured by Shin-Etsu Chemical Co., Ltd.) as a silane coupling agent. parts by mass, and 1 part by mass (mass ratio 10/1/2) of KF-105 (manufactured by Shin-Etsu Chemical Co., Ltd.) as silicone oil, and further stirred and mixed at room temperature (25°C) for 5 minutes to obtain (E -2) component. Next, (A) thermosetting resins BMI-80 (manufactured by K-I Kasei Co., Ltd.) and EPPN-502H (manufactured by Nippon Kayaku Co., Ltd.) were added to component (E-2). 80/EPPN-502H/(component (c-3) in component (E-2)) = 20/70/5 (mass ratio), and further stirred and mixed at 150°C for 30 minutes to form a premix. And so. To the obtained premix were added (A) thermosetting resins BMI-2300 (manufactured by Daiwa Kasei Kogyo Co., Ltd.) and SN-485 (manufactured by Nippon Steel & Sumikin Chemical Co., Ltd.), and (B) 2P4MHZ- as a curing accelerator. PW (manufactured by Shikoku Kasei Kogyo Co., Ltd.), (c-1) FB-105 (manufactured by Denki Kagaku Kogyo Co., Ltd.) as an inorganic filler, and (c-2) Espears SL75 (Taiheiyo Cement (Taiheiyo Cement) as a hollow structure filler. (D) silicone powder (EP-5518, manufactured by Dow Corning Toray Industries, Inc.) as a low stress agent, KBM-403 as a silane coupling agent, and HW-4252E (Mitsui Chemicals, Inc.) as a mold release agent. ) were mixed in the amounts shown in Table 1 and kneaded using a twin-screw mixing roll to prepare a molding material composition for sealing in Example 16.

(Example 17)
(c-3) 2.5 parts by mass of KC Flock (registered trademark) W-50GK (manufactured by Nippon Paper Industries, Ltd.) as an organic filler, and KBM-573 (manufactured by Shin-Etsu Chemical Co., Ltd.) as a silane coupling agent. 0.25 parts by mass (mass ratio 10/1) were mixed and further stirred and mixed at room temperature (25° C.) for 5 minutes to obtain component (E-3). Next, (A) thermosetting resins BMI-80 (manufactured by K.I. Kasei Co., Ltd.) and EPPN-502H (manufactured by Nippon Kayaku Co., Ltd.) were added to component (E-3). 80/EPPN-502H/(component (c-3) in component (E-3)) = 20/70/2.5 (mass ratio), and further stirred and mixed at 150 ° C. for 30 minutes. This was used as a premix. To the obtained premix were added (A) thermosetting resins BMI-2300 (manufactured by Daiwa Kasei Kogyo Co., Ltd.) and SN-485 (manufactured by Nippon Steel & Sumikin Chemical Co., Ltd.), and (B) 2P4MHZ- as a curing accelerator. PW (manufactured by Shikoku Kasei Kogyo Co., Ltd.), (c-1) FB-105 (manufactured by Denki Kagaku Kogyo Co., Ltd.) as an inorganic filler, and (c-2) Espears SL75 (Taiheiyo Cement (Taiheiyo Cement) as a hollow structure filler. (D) silicone powder (EP-5518, manufactured by Dow Corning Toray Co., Ltd.) as a low stress agent, KBM-573 as a silane coupling agent, and HW-4252E (Mitsui Chemicals, Inc.) as a mold release agent. ) were mixed in the amounts shown in Table 1 and kneaded using a twin-screw mixing roll to prepare a molding material composition for sealing in Example 17.

Details of each component listed in Tables 1 and 2 used for preparing the encapsulating molding material composition are as follows.

<(A) Thermosetting resin>
[Maleimide resin]
・BMI-2300: Polyphenylmethane maleimide (z=0 to 2 in general formula (I) is the main component), manufactured by Daiwa Kasei Kogyo Co., Ltd., product name ・BMI-80: 2,2-bis[ 4-(4-maleimidophenoxine)phenyl]propane, manufactured by K.I. Kasei Co., Ltd., trade name

[Phenol resin]
・SN-485: Naphthalene type phenolic resin (main component is phenolic resin with y1 = 0 to 3 in general formula (III)), manufactured by Nippon Steel & Sumikin Chemical Co., Ltd., trade name, hydroxyl equivalent: 215, softening point: 87°C
・MEH-7500: Triphenylmethane type phenol resin (main component is phenol resin in which x = 1 to 4 in general formula (II)), manufactured by Meiwa Kasei Co., Ltd., trade name, hydroxyl equivalent: 97, softening point: 110 ℃
・MEH-7851: Biphenyl type phenol resin, manufactured by Meiwa Kasei Co., Ltd., trade name, hydroxyl equivalent: 204, softening point: 70°C

〔Epoxy resin〕
・EPPN-502H: Triphenylmethane type epoxy resin (main component is epoxy resin with n1 = 0 to 3 in general formula (IV)), manufactured by Nippon Kayaku Co., Ltd., trade name, epoxy equivalent 168, softening point 67℃
・NC-3000: Biphenyl novolac epoxy resin (trade name, manufactured by Nippon Kayaku Co., Ltd., epoxy equivalent: 276, softening: 58°C)

[Benzoxazine resin]
・Benzoxazine P-d: Benzoxazine resin [benzoxazine resin represented by formula (VII-1)], manufactured by Shikoku Kasei Kogyo Co., Ltd., product name

[Cyanate resin]
・CYTESTER (registered trademark) TA: cyanate ester compound containing 2,2-bis(4-cyanatophenyl)propane as the main component (99% or more), manufactured by Mitsubishi Gas Chemical Co., Ltd., product name

<(B) Curing accelerator>
[Phosphorous curing accelerator]
・TPP: Triphenylphosphine, manufactured by Hokko Chemical Co., Ltd., trade name ・TPP-BQ: Adduct of triphenylphosphine and parabenzoquinone

Note that TPP-BQ was synthesized as follows.
A separable flask equipped with a cooling tube and a stirring device was charged with 4.25 g of benzoquinone, 10 g of triphenylphosphine, and 30 g of acetone, and reacted at room temperature (25° C.) with stirring. The precipitated crystals were washed with acetone, filtered, and dried to obtain 14 g of TPP-BQ as yellowish brown crystals.

[Imidazole curing accelerator]
・2P4MHZ-PW: 2-phenyl-4-methyl-5-hydroxymethylimidazole, manufactured by Shikoku Kasei Kogyo Co., Ltd., trade name (reaction initiation temperature with bisphenol A epoxy resin: 129°C)
・2MZ-A: 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazine, manufactured by Shikoku Kasei Kogyo Co., Ltd., product name (with bisphenol A type epoxy resin) Reaction start temperature: 120℃)

<(C) Filler>
[(c-1) Inorganic filler]
・FB-105: Fused spherical silica, manufactured by Denki Kagaku Kogyo Co., Ltd., trade name, average particle diameter 18 μm, specific surface area 4.5 m ² /g

[(c-2) Hollow structure filler]
・Easfires SL75: Inorganic hollow structure filler whose main components are amorphous aluminum (65-85%) and mullite (20-30%), average particle size 55 μm, manufactured by Taiheiyo Cement Co., Ltd., product name, Elastic modulus 10GPa

[(c-3) Organic filler]
・KC Flock (registered trademark) W-50GK (manufactured by Nippon Paper Industries Co., Ltd., trade name, average particle size 45 μm)

<(D) Low stress agent>
[Silicone powder]
・EP-5518: Silicone powder whose main component is polymethylsilsesquioxane, manufactured by Dow Corning Toray Co., Ltd., trade name, average particle size 3 μm
[Silicone oil]
・KF-105: Dimethyl silicone modified with epoxy at both ends, manufactured by Shin-Etsu Chemical Co., Ltd., trade name, viscosity at 25°C 15 mm ² /s

<Other ingredients>
・KBM-403: Silane coupling agent, 3-glycidoxypropyltrimethoxysilane, manufactured by Shin-Etsu Chemical Co., Ltd., trade name ・KBM-573: Silane coupling agent, N-phenyl-3-aminopropyltrimethoxy Silane, manufactured by Shin-Etsu Chemical Co., Ltd., product name: HW-4252E: Mold release agent (oxidized polyethylene mold release agent with a number average molecular weight of 1,000), manufactured by Mitsui Chemicals, Inc., product name: Carnauba Wax 1 No.: Mold release agent, carnauba wax, manufactured by Toyo Adre Co., Ltd., product name

The properties of the molding material compositions for sealing prepared in Examples 1 to 17 and Comparative Examples 1 to 6 were measured and evaluated under the measurement conditions shown below. The evaluation results are shown in Tables 1 and 2.
The molding materials were molded using a transfer molding machine under conditions of a mold temperature of 185° C., a molding pressure of 10 MPa, and a curing time of 180 seconds, unless otherwise specified. Further, post-curing was performed at 200° C. for 8 hours.

<Evaluation items>
(1) Molding shrinkage rate α, shrinkage rate β, (β-α)
The molding material composition for sealing was molded under the above conditions using a mold of φ100 mm×10 mm t, and further post-cured under the above conditions to produce a molded product (φ 100 mm×10 mm t). The dimensions of the obtained molded product were measured at four predetermined locations at room temperature (25°C) using a micrometer (manufactured by Mitutoyo Co., Ltd., DIGIMATIC MICROMETER. The same applies hereinafter), and the average value was calculated as the dimension of the molded product. And so. From the dimensions of the obtained molded product, the amount of change with respect to the mold internal dimensions at room temperature was determined, and the molding shrinkage rate α was calculated.
In addition, after the molded product obtained under the above conditions was left at 250°C for 500 hours, the dimensions of the molded product were measured at four predetermined locations at room temperature (25°C) using a micrometer, and the average value was calculated. These are the dimensions of the molded product. From the dimensions of the obtained molded product, the amount of change with respect to the inner dimensions of the mold was determined, and the shrinkage rate β was calculated.

(2) Storage Modulus Using a mold of 4.3 mm x 3.0 mm x 35 mm, the molding material composition for sealing was molded under the above conditions, and further post-cured under the above conditions to form a molded product (4. 3 mm x 3.0 mm x 35 mm). The molded product was cut into the required dimensions as a test piece, the thickness of the test piece was measured with a micrometer, and tensile strength was measured using a dynamic viscoelasticity device (manufactured by TA Instrument, product name: Q800). The temperature was raised from room temperature (25 °C) to 300 °C at a mode of 10 Hz and a heating rate of 10 °C/min, and the dynamic viscoelastic modulus at 25 °C and the dynamic viscoelastic modulus at 250 °C were measured. was calculated.

(3) Glass transition temperature (Tg) and coefficient of linear expansion CTE1, CTE2
The glass transition temperature (Tg) was measured as a measure of the heat resistance of the cured product of the molding material composition for sealing. First, a molding material composition for sealing was molded under the above conditions using a mold of 4 mm x 4 mm x 20 mm, and further post-cured under the above conditions to produce a molded product (4 mm x 4 mm x 20 mm). The molded product was cut into the required dimensions as a test piece, and the test piece was analyzed using a thermal analysis device (manufactured by Seiko Instruments Inc., trade name: SSC/5200) using the TMA method. The glass transition temperature (Tg) was measured by raising the temperature from room temperature (25°C) to 320°C at a temperature rate of 10°C/min. Further, from the obtained TMA chart, the slope of the tangent at 50 to 60°C was defined as the coefficient of linear expansion CTE1, and the slope of the tangent at 290 to 300°C was determined to be the coefficient of linear expansion CTE2.

(4) Generated stress From the molding shrinkage rate α, shrinkage rate β, storage modulus E ₂₅ , E ₂₅₀ , glass transition temperature (Tg) and linear expansion coefficient CTE1, CTE2 obtained in (1) to (3) above, The values of σ(1), σ(2), and σ(3) were determined, and the value of the following formula (1) was calculated.

In the formula, α is the molding shrinkage rate (%) at 25°C with respect to the mold dimensions of the cured product, and β is the molding shrinkage rate (%) at 25°C with respect to the mold dimensions of the cured product after the cured product is further left at 250°C for 500 hours. Shrinkage rate (%), _E25 is the storage modulus (GPa) of the cured product at 25°C, _E250 is the storage modulus (GPa) of the cured product at 250°C, and CTEt is the linear expansion coefficient (ppm) of the lead frame. /°C), CTE1 is the coefficient of linear expansion below the glass transition temperature of the cured product (ppm/°C), CTE2 is the coefficient of linear expansion above the glass transition temperature of the cured product (ppm/°C), and Tg is the coefficient of linear expansion above the glass transition temperature of the cured product. Represents the glass transition temperature (°C) of a substance. Here, a copper lead frame is used as the lead frame, and the linear expansion coefficient CTEt of the lead frame is 17 ppm/°C.

(5) Thermal decomposition initiation temperature As another measure of the heat resistance of the cured product of the molding material composition for sealing, the thermal decomposition temperature was measured using a thermogravimetric differential thermal analyzer (TG-DTA). Using a mold of 4 mm x 4 mm x 20 mm, the molding material composition for sealing was molded under the above conditions and further post-cured under the above conditions to produce a molded product (4 mm x 4 mm x 20 mm). The molded product was cut out to the same size as in (3) above as a test piece, and the test piece was thoroughly ground in a mortar and the resulting powder was heated to room temperature (25°C) at a heating rate of 10°C/min. and heated to 600°C. From the obtained weight change chart, the temperature at which a 1% weight reduction was observed was defined as the thermal decomposition temperature. The measuring device used was "EXSTAR6000" manufactured by Seiko Instruments Inc.

(6) Adhesive strength (adhesion strength)
A molded product obtained by molding a molding material composition for sealing under the above conditions on the island portion of a Cu lead frame (manufactured by Mitsui High-Tech Co., Ltd., trade name "LQFP-2828p"), and further post-curing under the above conditions. was created. Using a bond tester (manufactured by Seishin Shoji Co., Ltd., SS-30WD), a φ3.5 mm printed molded product formed on the island part of the Cu lead frame was placed from a height of 0.5 mm from the bottom of the molded product. The molded product was peeled off in the shear direction at a speed of 0.08 mm/sec, and the adhesive strength (adhesion strength) between the molded product and the Cu lead frame was measured.

(7) Peelability (initial stage)
A SiC chip (6 x 6 x 0.15 mm, no surface protection film) was placed in the center of the island (8.5 x 11.5 mm) of a TO-247 package with a Cu lead frame using sintered Ag paste manufactured by Kyocera Corporation. (CT2700R7S) and molded the sealing molding material composition under the above conditions to produce 10 molded products. The molded product was observed using an ultrasonic imaging device (manufactured by Hitachi, Ltd., FS300II) to confirm the presence or absence of peeling between the island around the SiC chip and the cured product of the molding material composition for sealing. Observations were made before and after post-curing, and 3 or less out of 10 packages in which peeling of the island portion was observed after post-curing were considered to be passed. Further, the Cu lead frame was used by subjecting the molding material composition for sealing to argon plasma treatment for 60 seconds using a plasma cleaner AC-300 manufactured by Nordson Corp. immediately before molding.

(8) Peelability (after temperature cycle test)
After the test in (7) above, using a total of 10 packages (molded products) in which no peeling of the island part was observed and molded products produced under the conditions shown in (7) above, the following temperature cycle test was conducted. I did it. Using a thermal shock tester (TSA-42EL, manufactured by Espec Co., Ltd.), the molded product was left at -40°C for 30 minutes, and then heated to 250°C at a heating rate of 40°C/min. A temperature cycle test was conducted for 1000 cycles, with one cycle consisting of leaving the sample at 250°C for 30 minutes and then lowering the temperature to -40°C at a rate of 40°C/min. The molded product after the temperature cycle test was observed using an ultrasonic imaging device (manufactured by Hitachi, Ltd., FS300II) to check for peeling between the island around the SiC chip and the cured product of the molding material composition for sealing. The number of packages in which peeling of the island portion was observed was 3 or less out of 10 was evaluated as a pass.

The cured products of the encapsulation molding material compositions of Examples 1 to 17 that satisfy formula (1) all have high glass transition temperatures and high thermal decomposition start temperatures, and have excellent heat resistance, as well as excellent adhesion to semiconductor insert parts. It can be seen that the material is excellent and does not easily peel off from the semiconductor insert component even after the temperature cycle test.

Claims (10)

A molding material composition for sealing comprising (A) a thermosetting resin, (B) a curing accelerator, and (C) a filler,
Occurrence that occurs when the molding material composition for sealing is cured in a mold at 180°C for 180 seconds, and then post-cured outside the mold at 200°C for 8 hours to obtain a cured product. Stress σ(1), stress σ(2) generated due to thermal history generated when 1000 cycles of a temperature cycle test at -40 to 250°C using the cured product, and the temperature cycle test using the cured product SiC, Ga ₂ O ₃ , GaN, and a molding material composition for sealing a diamond element, in which the stress σ (3) generated due to irreversible contraction of the cured product when the test is performed for 1000 cycles satisfies the following formula (1). thing.

(In the formula, α is the molding shrinkage rate (%) at 25°C with respect to the mold dimensions of the cured product, and β is 25°C with respect to the mold dimensions of the cured product after the cured product is further left at 250°C for 500 hours. _E25 is the storage modulus (GPa) of the cured product at 25°C, _E250 is the storage modulus (GPa) of the cured product at 250°C, and CTEt is the linear expansion coefficient (GPa) of the cured product. ppm/°C), CTE1 is the coefficient of linear expansion below the glass transition temperature of the cured product (ppm/°C), CTE2 is the coefficient of linear expansion above the glass transition temperature of the cured product (ppm/°C), and Tg is the coefficient of linear expansion above the glass transition temperature of the cured product (ppm/°C). Represents the glass transition temperature (°C) of the cured product.) The molding material composition for sealing SiC, Ga ₂ O ₃ , GaN, and diamond elements according to claim 1, wherein the value of σ(3) is 0.00 to 50.0 MPa. The molding material composition for sealing SiC, Ga ₂ O ₃ , GaN and diamond elements according to claim 1 or 2, wherein the value of σ(1) is 0.00 to 30.0 MPa. SiC, Ga ₂ according to any one of claims 1 to 3, wherein the value of α is 0.00 to 0.20%, and the value of β-α is 0.00 to 0.40%. Molding material composition for sealing O ₃ , GaN and diamond elements. The molding material for encapsulating SiC, Ga ₂ O ₃ , GaN, and diamond elements according to any one of claims 1 to 4, wherein the cured product of the encapsulating molding material composition has a thermal decomposition initiation temperature higher than 350°C. Composition. The molding material composition for encapsulating SiC, Ga ₂ O ₃ , GaN and diamond elements according to any one of claims 1 to 5, wherein the adhesive strength of the cured product of the encapsulating molding material composition is 5 MPa or more. . The molding material composition for sealing SiC, Ga ₂ O ₃ , GaN, and diamond elements according to any one of claims 1 to 6, wherein the (C) filler includes (c-2) a hollow structure filler. The molding material composition for sealing SiC, Ga ₂ O ₃ , GaN and diamond elements according to any one of claims 1 to 7, further comprising (D) a low stress agent. SiC, Ga ₂ O ₃ according to any one of claims 1 to 8, wherein the (C) filler contains (c-3) an organic filler, and the (c-3) organic filler contains cellulose. , a molding material composition for encapsulating GaN and diamond elements. An electronic component device comprising an element sealed with a cured product of the molding material composition for sealing according to any one of claims 1 to 9.