JP2018084670A - Electro-optical device and electronic apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an electro-optical device that can prevent leakage of light in a black display area provided on the periphery of a display area, and an electronic apparatus.SOLUTION: In an electro-optical device 100, an element substrate 10 has a reflecting electrode 9b to which the same potential as that for a common electrode 21 is applied formed in a black display area 10b surrounding a display area in order to perform black display. The reflecting electrode 9b has an opening 9u formed therein, and a light absorption layer 7d overlapped with the opening 9u in plan view is provided between the reflecting electrode 9b and a metal wire 6d provided on the opposite side of an opposing substrate 20 with respect to the reflecting electrode 9b. Thus, even when light made incident on the opposing substrate 20 passes through the opening 9u due to disturbance of orientation in an electro-optical layer 50, such light is blocked by the light absorption layer 7d and does not reach the metal wire 6d.SELECTED DRAWING: Figure 6

Description

  The present invention relates to an electro-optical device in which a black display area is provided around a display area, and an electronic apparatus.

  In an electro-optical device such as a reflective liquid crystal device, an electro-optical layer is provided in a region surrounded by a sealing material between an element substrate and a counter substrate. In such an electro-optical device, a display region in which reflective pixel electrodes of an element substrate are arranged is provided in a region surrounded by a sealing material in a plan view. In addition, in order to improve the quality of an image displayed in the display area, a black display area may be provided around the display area, and a reflective electrode to which the same potential as the common electrode is applied is provided in the black display area. (For example, refer to Patent Document 1). The reflective electrode described in Patent Document 1 is provided with an opening.

  On the other hand, in the element substrate of the reflective liquid crystal device, a light shielding layer is provided in a region overlapping between adjacent pixel electrodes in order to prevent light incident from between the reflective pixel electrodes from reaching the pixel switching element. Have been proposed (see Patent Documents 2 and 3).

JP 2014-92726 A JP 2000-269473 A JP 2002-40482 A

  When the opening is provided in the black display reflective electrode as in the configuration described in Patent Document 1, the alignment of the liquid crystal molecules is disturbed by a step or the like caused by the edge of the opening or the end of the reflective electrode. The light source light incident from the counter substrate side may pass through the opening. In that case, if the metal wiring exists in a region overlapping with the opening in plan view, the light that has passed through the opening of the reflective electrode is reflected by the metal wiring and is emitted from the counter substrate side through the opening. As a result, there is a problem that when a dark image is displayed in the display area, black in the black display area becomes conspicuous.

  On the other hand, Patent Documents 2 and 3 do not describe a black display region using a reflective electrode to which the same potential as the common electrode is applied. Patent Documents 2 and 3 only describe a light shielding layer for suppressing light incident between the pixel electrodes from reaching the pixel switching element. There is no description of light leakage.

  In view of the above problems, an object of the present invention is to provide an electro-optical device and an electronic apparatus that can prevent light leakage in a black display region provided around a display region.

  In order to solve the above-described problems, an aspect of the electro-optical device according to the invention includes an element substrate, a counter substrate provided with a light-transmitting common electrode on a surface facing the element substrate, and the element substrate. A sealing material for bonding the counter substrate, and an electro-optical layer disposed in a region surrounded by the sealing material between the element substrate and the counter substrate, and surrounded by the sealing material A display region in which a plurality of reflective pixel electrodes are formed on one side of the element substrate facing the counter substrate, and a reflective electrode to which the same potential as the common electrode is applied A black display region formed on the one surface side of the element substrate so as to surround, the reflective electrode is provided with an opening, and the counter substrate with respect to the reflective electrode of the element substrate is Metal wiring provided on the opposite side and the reflective electrode; Between, and a light absorbing layer that overlaps with the opening in plan view is provided.

  In one embodiment of the present invention, a black electrode can be displayed because a reflective electrode to which the same potential as the common electrode is applied is formed in the element substrate in a black display region surrounding the display region. In addition, an opening is formed in the reflective electrode, but light absorption that overlaps with the opening in plan view is between the reflective electrode and the metal wiring provided on the opposite side of the counter substrate from the reflective electrode. A layer is provided. For this reason, even when light incident from the counter substrate side passes through the opening due to disorder of orientation in the electro-optic layer, the light is blocked by the light absorption layer and does not reach the metal wiring. Therefore, it is possible to prevent light from leaking from the black display area due to reflection on the metal wiring.

  In the present invention, a mode in which a boron silicate glass layer is exposed between each of the plurality of pixel electrodes and from the opening can be employed. According to this aspect, even when the electro-optic layer contains moisture, the moisture of the electro-optic layer can be adsorbed by the boron silicate glass layer. Accordingly, it is possible to suppress deterioration of characteristics due to moisture in the electro-optic layer.

  In the present invention, the light absorption layer may be formed of a conductive layer to which the same potential as the common electrode is applied. According to this aspect, it is possible to prevent the light absorption layer from driving the electro-optic layer in the black display region.

  In the present invention, the light absorption layer may adopt a mode formed of a metal layer or a metal compound layer that constitutes a wiring on the side opposite to the counter substrate with respect to the pixel electrode. According to this aspect, there is no need to add a layer for providing the light absorption layer.

  In the present invention, the light absorption layer may employ an aspect made of a titanium nitride film. If it is a titanium nitride film, it is used for various wirings in the element substrate and is excellent in light absorption.

  Another aspect of the electro-optical device according to the invention includes an element substrate, a counter substrate having a light-transmitting common electrode on a surface facing the element substrate, and a seal that bonds the element substrate and the counter substrate together. And an electro-optic layer disposed in a region surrounded by the sealing material between the element substrate and the counter substrate, and in the region surrounded by the sealing material, A display region having a plurality of reflective pixel electrodes formed on one side facing the counter substrate, and a reflective electrode to which the same potential as the common electrode is applied surround the display region. A black display region formed on one surface side, and the reflective electrode is formed on the entire surface of the black display region without an opening.

  In another aspect of the present invention, the element substrate is provided with a reflective electrode to which the same potential as the common electrode is applied in a black display region surrounding the display region, so that black display can be performed. In addition, since the opening is not formed in the reflective electrode, even if light incident from the counter substrate side reaches the reflective electrode due to disorder of orientation in the electro-optic layer, a phenomenon occurs that the light passes through the opening. do not do. Therefore, it is possible to prevent light from leaking from the black display area due to reflection on the metal wiring.

  The electro-optical device according to the present invention can be used in various electronic apparatuses such as a direct-view display device and a projection display device. When the electronic apparatus is a projection display device, the projection display device includes a light source unit that emits light supplied to the electro-optical device, a projection optical system that projects light modulated by the electro-optical device, and have.

1 is a plan view of an electro-optical device according to Embodiment 1 of the present invention. It is HH 'sectional drawing of the electro-optical apparatus shown in FIG. FIG. 2 is a plan view of a pixel of the electro-optical device shown in FIG. 1. FIG. 4 is a cross-sectional view of the pixel shown in FIG. 3 taken along the line FF ′. FIG. 2 is an enlarged plan view showing a part of a black display region of the electro-optical device shown in FIG. 1. FIG. 6 is a G1-G1 ′ sectional view of the black display region shown in FIG. 5. FIG. 6 is an enlarged plan view showing a part of a black display region of an electro-optical device according to a second embodiment of the invention. It is G2-G2 'sectional drawing of the black display area | region shown in FIG. 1 is a schematic configuration diagram of a projection display device (electronic device) using an electro-optical device to which the present invention is applied.

  Embodiments of the present invention will be described with reference to the drawings. In the drawings to be referred to in the following description, the scales are different for each layer and each member so that each layer and each member have a size that can be recognized on the drawing. In the following description, “plan view” means a state viewed from a direction perpendicular to the display surface of the element substrate 10. Further, when explaining the layers formed on the element substrate, the upper layer side or the surface side means the side opposite to the side where the substrate body of the element substrate is located (the side where the counter substrate is located), It means the side where the substrate body of the element substrate is located. In describing the layers formed on the counter substrate, the upper layer side or the surface side means the side opposite to the side where the substrate body of the counter substrate is located (the side where the element substrate is located), and the lower layer side is It means the side where the substrate body of the counter substrate is located.

[Embodiment 1]
(overall structure)
FIG. 1 is a plan view of the electro-optical device 100 according to Embodiment 1 of the present invention, in which the liquid crystal panel 100p is viewed from the side of the counter substrate together with each component. 2 is a cross-sectional view of the electro-optical device 100 shown in FIG. 1 and 2, the electro-optical device 100 is a reflective liquid crystal device including a liquid crystal panel 100p in a TN (Twisted Nematic) mode or a VA (Vertical Alignment) mode. In the liquid crystal panel 100p, the element substrate 10 and the counter substrate 20 are bonded to each other with a sealant 107 through a predetermined gap, and the sealant 107 is provided in a frame shape along the outer edge of the counter substrate 20. The sealing material 107 is an adhesive made of a photo-curing resin, a thermosetting resin, or the like, and is mixed with a gap material 107a such as glass fiber or glass beads for setting the distance between both substrates to a predetermined value. In the liquid crystal panel 100p, a liquid crystal layer as the electro-optical layer 50 is provided in a region surrounded by the sealing material 107 between the element substrate 10 and the counter substrate 20. In this embodiment, the sealing material 107 is formed with a discontinuous portion 107c used as a liquid crystal injection port, and the discontinuous portion 107c is closed by the sealing material 108 after the liquid crystal material is injected. Note that when the liquid crystal material is sealed by a dropping method, the discontinuous portion 107c is not formed.

  In the liquid crystal panel 100p, each of the element substrate 10 and the counter substrate 20 is a quadrangle, and a display region 10a in which a plurality of reflective pixel electrodes 9a are arranged in a matrix is formed in a square region at the approximate center of the liquid crystal panel 100p. It is provided as. Corresponding to such a shape, the sealing material 107 is also provided in a substantially square shape, and a rectangular frame-shaped outer peripheral region 10c exists outside the display region 10a.

  In the element substrate 10, on the side protruding from the counter substrate 20, a data line driving circuit 101 and a plurality of terminals 102 are formed along one side of the element substrate 10, and along another side adjacent to this one side. A scanning line driving circuit 104 is formed. The terminal 102 is provided on the outer peripheral side from the sealing material 107. A flexible wiring board (not shown) is connected to the terminal 102, and various potentials and various signals are input to the element substrate 10 through the flexible wiring board. In this embodiment, the data line driver circuit 101 and the scanning line driver circuit 104 partially overlap with the sealant 107 in plan view.

  As will be described in detail later, on one side 10s and the other side 10t of the element substrate 10 on the side of the one surface 10s facing the counter substrate 20, a pixel transistor (not shown) and a pixel transistor are provided in the display region 10a. Pixel electrodes 9a electrically connected to are formed in a matrix, and a first alignment film 16 is formed on the upper layer side of the pixel electrodes 9a.

  A common electrode 21 is formed on the side of the one surface 20 s facing the element substrate 10 out of the one surface 20 s and the other surface 20 t of the counter substrate 20. The common electrode 21 is formed as a region encompassing a plurality of pixels as a substantially entire surface of the counter substrate 20 or a plurality of strip electrodes. In the present embodiment, the common electrode 21 is formed on substantially the entire surface of the counter substrate 20.

  A light shielding layer 29 is formed on the lower side of the common electrode 21 on the one surface 20s side of the counter substrate 20, and a second alignment film is formed on the surface of the common electrode 21 on the electro-optic layer 50 (electro-optic layer) side. 26 are stacked. The light shielding layer 29 is formed as a frame portion 29a extending along the outer peripheral edge of the display region 10a. The light shielding layer 29 may be formed to include a black matrix portion 29b that overlaps the inter-pixel region 10f sandwiched between the adjacent pixel electrodes 9a. Here, the frame portion 29 a is formed between the display region 10 a and the sealing material 107. The outer peripheral edge of the frame portion 29 a is at a position spaced apart from the inner peripheral edge of the sealing material 107 and does not overlap the sealing material 107.

In this embodiment, the first alignment film 16 and the second alignment film 26 are inorganic alignment films made of oblique vapor deposition films such as SiO _X (x ≦ 2), TiO ₂ , MgO, Al ₂ O ₃ , A columnar body referred to is composed of a columnar structure layer formed obliquely with respect to the element substrate 10 and the counter substrate 20. Accordingly, the first alignment film 16 and the second alignment film 26 obliquely align nematic liquid crystal molecules having negative dielectric anisotropy used for the electro-optic layer 50 with respect to the element substrate 10 and the counter substrate 20. The liquid crystal molecules are given a pretilt. In this manner, the electro-optical device 100 is configured as a normally black VA mode liquid crystal device.

  In the liquid crystal panel 100p, the inter-substrate conduction electrode portions 24t are formed on the four corners on the one surface 20s side of the counter substrate 20 outside the sealing material 107, and the element substrate 10 side on the one surface 10s side. The inter-substrate conduction electrode portion 6t is formed at a position facing the four corners of the counter substrate 20 (inter-substrate conduction electrode portion 24t). The inter-substrate conducting electrode portion 6t is conducted to the constant potential line 6s to which the common potential Vcom is applied, and the constant potential line 6s is conducted to the terminal 102a for applying the common potential among the terminals 102. An inter-substrate conducting material 109 containing conductive particles is disposed between the inter-substrate conducting electrode portion 6t and the inter-substrate conducting electrode portion 24t, and the common electrode 21 of the counter substrate 20 serves as the inter-substrate conducting electrode. It is electrically connected to the element substrate 10 side via the electrode portion 6t, the inter-substrate conducting material 109, and the inter-substrate conducting electrode portion 24t. Therefore, the common potential Vcom is applied to the common electrode 21 from the element substrate 10 side. The sealing material 107 is provided along the outer peripheral edge of the counter substrate 20 with substantially the same width dimension.

  In the electro-optical device 100 having such a configuration, the common electrode 21 is formed of a light-transmitting conductive film such as an ITO (Indium Tin Oxide) film or an IZO (Indium Zinc Oxide) film. On the other hand, the pixel electrode 9a is formed of a reflective conductive film such as an aluminum film or an aluminum alloy film. Therefore, in the electro-optical device 100, as indicated by an arrow L in FIG. 2, light incident from the counter substrate 20 side is modulated while being reflected by the element substrate 10 and emitted to display an image.

  The electro-optical device 100 can be used as a color display device of an electronic apparatus such as a mobile computer or a mobile phone. In this case, a color filter (not shown) is formed on the counter substrate 20 or the element substrate 10. The electro-optical device 100 can be used as an RGB light valve in a projection type display device (liquid crystal projector) described later. In this case, each of the RGB electro-optical devices 100 receives light of each color separated through RGB color separation dichroic mirrors as projection light, so that no color filter is formed. .

(Configuration of the black display area 10b)
In the electro-optical device 100 of the present embodiment, a rectangular frame-shaped peripheral region sandwiched between the display region 10 a and the frame portion 29 a is a black display region 10 b in which the reflective electrode 9 b is formed on the element substrate 10. Therefore, the electro-optical device 100 includes a display region 10a in which the pixel electrode 9a is formed and a black electrode in which the reflective electrode 9b is formed to surround the display region 10a in a region surrounded by the sealant 107 in plan view. Display area 10b. Here, the reflective electrode 9b is electrically connected to the constant potential line 6s. Therefore, the same potential (common potential Vcom) as that of the common electrode 21 is applied to the reflective electrode 9b via the constant potential line 6s. Therefore, since the electro-optical device 100 according to the present embodiment is configured in the normally black VA mode, the black display area 10b always displays black while an image is displayed in the display area 10a. In addition, several columns (5 columns or less) and several rows (5 rows or less) of dummy pixels having the same configuration, the same size, and the same arrangement as the pixels of the display region 10a are arranged between the display region 10a and the black display region 10b. May be. In this case, black display can be performed by an image signal.

(Specific pixel configuration)
FIG. 3 is a plan view of a pixel of the electro-optical device 100 shown in FIG. 4 is a cross-sectional view of the pixel shown in FIG. 3 taken along the line FF ′. In addition, in FIG. 3, each layer is shown with the following lines. Further, in FIG. 3, the positions of the end portions of the layers overlapping with each other are shifted so that the shape of the layer can be easily understood.
Light shielding layer 8a = thin and long broken line Semiconductor layer 1a = thin and short dotted line Scanning line 3a = thick solid line Drain electrode 4a = thin solid line Data line 6a and relay electrode 6b, 6c = thin dotted line Capacitance electrode 5b = thick dashed line Capacitor line 7a and relay electrode 7b = thin two-dot chain line Pixel electrode 9a = thick broken line

  As shown in FIG. 3, on one surface 10 s of the element substrate 10 facing the counter substrate 20, a pixel electrode 9 a is formed in each of a plurality of pixels, and an inter-pixel region sandwiched between adjacent pixel electrodes 9 a. A data line 6a and a scanning line 3a are formed along 10f. In the present embodiment, the inter-pixel region 10f extends vertically and horizontally, and the scanning line 3a is a straight line along the first inter-pixel region 10g extending in the X direction (first direction) in the inter-pixel region 10f. The data line 6a extends linearly along the second inter-pixel region 10h extending in the Y direction (second direction). Further, a pixel transistor 30 is formed corresponding to the intersection of the data line 6a and the scanning line 3a. In this embodiment, the pixel transistor 30 uses the intersection region of the data line 6a and the scanning line 3a and its vicinity. Is formed. A capacitance line 7a is formed on the element substrate 10, and a common potential Vcom is applied to the capacitance line 7a. In this embodiment, the capacitor electrode 5b is formed in a lattice shape extending so as to overlap the scanning line 3a and the data line 6a. A capacitor line 7a is formed on the upper layer side of the pixel transistor 30, and the capacitor line 7a extends so as to overlap the data line 6a. A light shielding layer 8a is formed on the lower layer side of the pixel transistor 30, and the light shielding layer 8a is an intersection between the main line portion linearly extending so as to overlap the scanning line 3a and the data line 6a and the scanning line 3a. And a sub-line portion extending so as to overlap the data line 6a.

  As shown in FIG. 4, the element substrate 10 has a light-transmitting substrate body 10w such as a quartz substrate or a glass substrate, and is formed on the one surface 10s side of the substrate body 10w facing the counter substrate 20. The pixel electrode 9a, the pixel transistor 30, and the like are formed. The counter substrate 20 has a light-transmitting substrate main body 20w such as a quartz substrate or a glass substrate. The light-shielding layer 29 formed on the one surface 20s side of the substrate main body 20w facing the element substrate 10 is common. An electrode 21 and the like are formed.

  More specifically, in the element substrate 10, on the one surface 10s side of the substrate body 10w, a lower light shielding layer made of a conductive film such as a conductive polysilicon film, a metal silicide film, a metal film, or a metal compound film. 8a is formed. In the present embodiment, the light shielding layer 8a is made of a light shielding film such as tungsten silicide (WSi), and when the light passing through the electro-optical device 100 is reflected by another member, the reflected light is incident on the semiconductor layer 1a. This prevents the pixel transistor 30 from malfunctioning due to photocurrent. The light shielding layer 8a may be configured as a scanning line. In this case, the gate electrode 3c described later and the light shielding layer 8a are electrically connected. A light-transmitting insulating film 12 is formed on the upper side of the light shielding layer 8a, and a pixel transistor 30 including the semiconductor layer 1a is formed on the surface side of the insulating film 12. In this embodiment, the insulating film 12 is made of a silicon oxide film or the like.

  The pixel transistor 30 includes a semiconductor layer 1a having a long side direction in the extending direction of the data line 6a, and a central portion in the length direction of the semiconductor layer 1a extending in a direction orthogonal to the length direction of the semiconductor layer 1a. In this embodiment, the gate electrode 3c is formed of a part of the scanning line 3a. The pixel transistor 30 has a translucent gate insulating layer 2 between the semiconductor layer 1a and the gate electrode 3c. The semiconductor layer 1a includes a channel region 1g opposed to the gate electrode 3c via the gate insulating layer 2, and includes a source region 1b and a drain region 1c on both sides of the channel region 1g. In this embodiment, the pixel transistor 30 has an LDD (Lightly Doped Drain) structure. Therefore, each of the source region 1b and the drain region 1c includes a low concentration region on both sides of the channel region 1g, and includes a high concentration region in a region adjacent to the low concentration region on the opposite side to the channel region 1g.

  The semiconductor layer 1a is composed of a polysilicon film (polycrystalline silicon film) or the like. The gate insulating layer 2 includes a first gate insulating layer 2a made of a silicon oxide film obtained by thermally oxidizing the semiconductor layer 1a and a silicon oxide film made of a low pressure CVD method under a high temperature condition of 700 to 900 ° C. It has a two-layer structure with a two-gate insulating layer 2b. The gate electrode 3c and the scanning line 3a are made of a conductive film such as a conductive polysilicon film, a metal silicide film, a metal film, or a metal compound film. In this embodiment, the gate electrode 3c has a two-layer structure of a conductive polysilicon film and a tungsten silicide film.

  A translucent interlayer insulating film 41 made of a silicon oxide film or the like is formed on the upper layer side of the gate electrode 3c, and a drain electrode 4a is formed on the upper layer of the interlayer insulating film 41. The drain electrode 4a is made of a conductive film such as a conductive polysilicon film, a metal silicide film, a metal film, or a metal compound film. In this embodiment, the drain electrode 4a is made of a titanium nitride film. The drain electrode 4 a is formed so as to partially overlap the drain region 1 c (pixel electrode side source / drain region) of the semiconductor layer 1 a, and through a contact hole 41 a penetrating the interlayer insulating film 41 and the gate insulating layer 2. It is electrically connected to the drain region 1c.

  A translucent insulating film 49 made of a silicon oxide film or the like and a translucent dielectric layer 40 are formed on the upper layer side of the drain electrode 4a. A capacitive electrode is formed on the upper layer side of the dielectric layer 40. 5b is formed. As the dielectric layer 40, a silicon compound such as a silicon oxide film or a silicon nitride film can be used, and an aluminum oxide film, a titanium oxide film, a tantalum oxide film, a niobium oxide film, a hafnium oxide film, a lanthanum oxide film, zirconium A dielectric layer having a high dielectric constant such as an oxide film can be used. The capacitor electrode 5b is made of a conductive film such as a conductive polysilicon film, a metal silicide film, a metal film, or a metal compound film. In this embodiment, the capacitor electrode 5b has a three-layer structure of a titanium nitride film, an aluminum film, and a titanium nitride film. Here, the capacitor electrode 5 b overlaps the drain electrode 4 a through the dielectric layer 40, and constitutes a storage capacitor 55.

  An interlayer insulating film 42 made of a silicon oxide film or the like is formed on the upper side of the capacitor electrode 5b. On the upper layer side of the interlayer insulating film 42, the data line 6a and the relay electrodes 6b and 6c are the same conductive film. It is formed by. The data line 6a and the relay electrodes 6b and 6c are made of a conductive film such as a conductive polysilicon film, a metal silicide film, a metal film, or a metal compound film. In this embodiment, the data line 6a and the relay electrodes 6b and 6c are For example, it is a metal wiring made of a laminated film of an aluminum film and a titanium film. The data line 6a is electrically connected to the source region 1b (data line side source / drain region) through a contact hole 42a penetrating the interlayer insulating film 42, the insulating film 49, the interlayer insulating film 41 and the gate insulating layer 2. The relay electrode 6 b is electrically connected to the drain electrode 4 a through a contact hole 42 b that penetrates the interlayer insulating film 42 and the insulating film 49. The relay electrode 6c is electrically connected to the capacitor electrode 5b through a contact hole 42c that penetrates the interlayer insulating film 42.

  A light-transmitting interlayer insulating film 44 made of a silicon oxide film or the like is formed on the upper side of the data line 6a and the relay electrode 6b. On the upper layer side of the interlayer insulating film 44, the capacitor line 7a and the relay electrode 7b are formed. Are formed of the same conductive film. The interlayer insulating film 44 is made of, for example, a silicon oxide film formed by a plasma CVD method using tetraethoxysilane and oxygen gas or a plasma CVD method using silane gas and nitrous oxide gas, and the surface thereof is flat. It has become. The capacitor line 7a and the relay electrode 7b are made of a conductive film such as a conductive polysilicon film, a metal silicide film, a metal film, or a metal compound film. In this embodiment, the capacitor line 7a and the relay electrode 7b are made of an aluminum alloy film, And a laminated film of two to four layers of a titanium nitride film and an aluminum film.

  In this embodiment, each of the capacitor line 7a and the relay electrode 7b includes a lower layer aluminum film 7e and an upper layer titanium nitride film 7f stacked on the aluminum film 7e. The titanium nitride film 7f has light absorption. It is a light shielding film. The relay electrode 7 b is electrically connected to the relay electrode 6 b through a contact hole 44 b that penetrates the interlayer insulating film 44. The capacitor line 7 a is electrically connected to the relay electrode 6 c through a contact hole 44 c that penetrates the interlayer insulating film 44. A common potential Vcom is applied to the capacitor line 7a, and the common potential Vcom is applied to the capacitor electrode 5b via the relay electrode 6c. The capacitor line 7a extends so as to overlap the data line 6a, and functions as a light shielding layer.

A translucent interlayer insulating film 45 made of a silicon oxide film or the like is formed on the upper side of the capacitor line 7a and the relay electrode 7b. The entire interlayer insulating film 45 or the upper layer side (the electro-optic layer 50 side) is made of a boron silicate glass (BSG) layer 45s. The boron silicate glass layer 45s can be formed by, for example, an atmospheric pressure CVD method, and the film formation temperature at that time is, for example, 350 to 450 ° C. In addition, when forming the boron silicate glass layer 45s, the source gas used is SiH ₄ , B ₂ H ₆ , O ₃ or the like.

  The interlayer insulating film 45 has a flat surface. A pixel electrode 9a made of a reflective conductive film such as an aluminum film or an aluminum alloy film is formed on the upper layer side of the interlayer insulating film 45 (on the electro-optic layer 50 side), and the boron silicate glass layer 45s is adjacent to the other. The pixel electrode 9a is exposed from 9c. The pixel electrode 9 a partially overlaps the relay electrode 7 b and is electrically connected to the relay electrode 7 b through a contact hole 45 a that penetrates the interlayer insulating film 45. As a result, the pixel electrode 9a is electrically connected to the drain region 1c through the relay electrode 7b, the relay electrode 6b, and the drain electrode 4a. A first alignment film 16 such as a polyimide film or an inorganic alignment film is formed on the surface of the pixel electrode 9a. However, the first alignment film 16 is an inorganic alignment film formed by oblique vapor deposition, and has a column structure having a plurality of protrusions. Therefore, between the protrusions (columns), boron silicate glass is formed at the bottom. The layer 45s is exposed to the electro-optic layer 50.

(Detailed configuration of the black display area 10b)
FIG. 5 is an enlarged plan view showing a part of the black display region 10b of the electro-optical device 100 shown in FIG. 6 is a cross-sectional view taken along line G1-G1 ′ of the black display region 10b shown in FIG. As shown in FIGS. 5 and 6, a reflective electrode 9b made of a reflective conductive film in the same layer as the pixel electrode 9a is formed in the black display region 10b, and a first alignment film is formed above the reflective electrode 9b. 16 is formed. Further, the reflective electrode 9 b faces the common electrode 21 of the counter substrate 20 via the electro-optic layer 50. Here, a plurality of openings 9u are formed in the reflective electrode 9b. The opening 9u has, for example, a planar shape in which slits extending in the X direction and the Y direction intersect. Therefore, the reflective electrode 9b has a shape partitioned by the opening 9u into a plurality of regions 9b0 having the same shape as the pixel electrode 9a, but the plurality of regions 9b0 are all connected.

  Although not shown, the reflective electrode 9b is electrically connected to the constant potential line 6s shown in FIG. 1 outside the black display region 10b. For example, the wiring portion branched from the constant potential line 6s outside the black display region 10b and the reflective electrode 9b are electrically connected directly or via a relay electrode, and the lower layer side of the reflective electrode 9b In some cases, the same layer as that constituting the pixel transistor 30 is laminated to prevent a large step from occurring.

  In the black display region 10b, on the lower layer side of the reflective electrode 9b, a metal wiring 6d made of a metal film in the same layer as the data line 6a extends, and the metal wiring 6d partially overlaps the opening 9u in plan view. Yes. In the present embodiment, the metal wiring 6d is made of a laminated film of an aluminum film and a titanium film. Note that a scanning line 3a made of a laminated film of a conductive polysilicon film and a tungsten silicide film extends on the lower layer side of the metal wiring 6d.

  On the other hand, on the upper layer side of the metal wiring 6d, a light absorption layer 7d is formed between the metal wiring 6d and the reflective electrode 9b. The light absorption layer 7d is a conductive film in the same layer as the capacitor line 7a, and is formed of a laminated film of a lower layer aluminum film 7e and an upper layer titanium nitride film 7f laminated on the aluminum film 7e. Therefore, at least the surface of the light absorbing layer 7d located on the opening 9u side is a light absorbing light shielding layer. In the present embodiment, the light absorption layer 7d is formed over the entire black display region 10b. The light absorption layer 7d may be formed only in a region overlapping the opening 9u of the reflective electrode 9b in plan view. In any case, the light absorption layer 7d is formed over the entire region overlapping the opening 9u of the reflective electrode 9b in plan view.

(Main effects of this embodiment)
As described above, in the electro-optical device 100 of the present embodiment, the element substrate 10 is formed with the reflective electrode 9b to which the same potential as the common electrode 21 is applied in the black display region 10b surrounding the display region 10a. Therefore, black display can be performed. Moreover, although the opening 9u is formed in the reflective electrode 9b, the opening 9u is provided between the reflective electrode 9b and the metal wiring 6d provided on the side opposite to the counter substrate 20 with respect to the reflective electrode 9b. And a light absorption layer 7d overlapping in plan view. For this reason, even when light incident from the counter substrate 20 side passes through the opening 9u due to disorder of orientation in the electro-optic layer 50, the light is blocked by the light absorption layer 7d, and thus reaches the metal wiring 6d. do not do. Therefore, it is possible to prevent light from leaking from the black display region 10b due to reflection on the metal wiring 6d. Therefore, when a dark image is displayed in the display area 10a, it is difficult for the black display area 10b to become conspicuous.

  Further, the boron silicate glass layer 45s is exposed between each of the plurality of pixel electrodes 9a and from the opening 9u of the reflective electrode 9b, and the boron silicate glass layer 45s has high moisture adsorptivity. Therefore, even when moisture enters the electro-optic layer 50, the moisture in the electro-optic layer 50 can be adsorbed by the boron silicate glass layer 45s. Therefore, it is possible to suppress characteristic deterioration due to moisture in the electro-optic layer 50.

  In addition, since the light absorption layer 7d is made of a conductive layer to which the same potential as that of the common electrode 21 is applied, the light absorption layer 7d does not affect the electro-optic layer 50 in the black display region 10b.

  Further, the light absorption layer 7d is made of a metal layer or a metal compound layer that forms wiring such as the capacitor line 7a on the side opposite to the counter substrate 20 with respect to the pixel electrode 9a. Therefore, the layer for providing the light absorption layer 7d. There is no need to add. Further, if the surface of the light absorption layer 7d is made of a titanium nitride film 7f, and the titanium nitride film 7f is used for various wirings in the element substrate 10, it is excellent in light absorption. Therefore, it is suitable for shielding the opening 9u of the reflective electrode 9b.

[Embodiment 2]
FIG. 7 is an enlarged plan view showing a part of the black display region 10b of the electro-optical device 100 according to Embodiment 2 of the present invention. FIG. 8 is a G2-G2 ′ cross-sectional view of the black display region 10b shown in FIG. Since the basic configuration of this embodiment is the same as that of Embodiment 1, common portions are denoted by the same reference numerals and description thereof is omitted.

  In Embodiment 1, an opening is formed in the reflective electrode 9b. In this embodiment, as shown in FIGS. 7 and 8, the black display region 10b has a reflective conductive layer in the same layer as the pixel electrode 9a. A reflective electrode 9b made of a film is formed. Here, the reflective electrode 9b is formed on the entire surface of the black display region 10b without an opening. Therefore, even when light incident from the counter substrate 20 side reaches the reflective electrode 9b due to disorder of orientation in the electro-optic layer 50, the phenomenon of passing through the opening does not occur. Therefore, it is possible to prevent light from leaking from the black display region 10b due to reflection on the metal wiring 6d.

[Other embodiments]
In the first embodiment, as the metal wiring 6d, the wiring in the same layer as the data line 6a overlaps the opening 9u of the reflective electrode 9b in a plan view. The present invention may be applied to the case where the portion 9u overlaps in plan view. In the first embodiment, the light absorption layer 7d is the same layer as the capacitor line 7a. However, a light absorption layer of the same layer as other wirings may be used as the light absorption layer 7d. In the above embodiment, the light absorption layer 7d is a laminated film of the aluminum film 7e and the titanium nitride film 7f. However, as the light absorption layer 7d, a single film of the titanium nitride film 7f, tungsten, molybdenum or the like. Alternatively, a silicide film or the like may be used.

  The electro-optical device 100 to which the present invention is applied is not limited to a VA mode liquid crystal device. For example, the present invention may be applied when the electro-optical device 100 is a liquid crystal device in a TN (Twisted Nematic) mode or an OCB (Optically Compensated Bend) mode.

[Example of mounting on electronic devices]
An electronic apparatus using the electro-optical device 100 according to the above-described embodiment will be described. FIG. 9 is a schematic configuration diagram of a projection display device (electronic apparatus) using the electro-optical device 100 to which the present invention is applied.

  A projection display apparatus 1000 shown in FIG. 9 includes a light source unit 1021 that generates light source light, a color separation light guide optical system 1023 that separates the light source light emitted from the light source unit 1021 into three colors of red, green, and blue. And a light modulator 1025 that is illuminated by the light source light of each color emitted from the color separation light guide optical system 1023. The light modulation unit 1025 includes the electro-optical device 100. Further, the projection display apparatus 1000 uses a cross dichroic prism 1027 (combining optical system) that synthesizes the image light of each color emitted from the light modulation unit 1025 and the image light that has passed through the cross dichroic prism 1027 on a screen (not shown). A projection optical system 1029 which is a projection optical system for projecting.

  In the projection display apparatus 1000, the light source unit 1021 includes a light source 1021a, a pair of fly-eye optical systems 1021d and 1021e, a polarization conversion member 1021g, and a superimposing lens 1021i. In the present embodiment, the light source unit 1021 includes a reflector 1021f having a paraboloid and emits parallel light. The fly-eye optical systems 1021d and 1021e are composed of a plurality of element lenses arranged in a matrix in a plane orthogonal to the system optical axis, and the light source light is divided and condensed and diverged individually by these element lenses. The polarization conversion member 1021g converts the light source light emitted from the fly-eye optical system 1021e into, for example, only a p-polarized component parallel to the drawing, and supplies it to the optical path downstream optical system. The superimposing lens 1021i allows the plurality of electro-optical devices 100 provided in the light modulation unit 1025 to be uniformly superimposed and illuminated by appropriately converging the light source light that has passed through the polarization conversion member 1021g as a whole.

  The color separation light guide optical system 1023 includes a cross dichroic mirror 1023a, a dichroic mirror 1023b, and reflection mirrors 1023j and 1023k. In the color separation light guide optical system 1023, the substantially white light source light from the light source unit 1021 enters the cross dichroic mirror 1023a. The red (R) light reflected by one of the first dichroic mirrors 1031a constituting the cross dichroic mirror 1023a is reflected by the reflecting mirror 1023j, passes through the dichroic mirror 1023b, and passes through the incident side polarizing plate 1037r and the p-polarized light. Then, the light enters the electro-optical device 100 for red (R) as p-polarized light through the wire grid polarizing plate 1032r that reflects s-polarized light and the optical compensation plate 1039r.

  Further, the green (G) light reflected by the first dichroic mirror 1031a is reflected by the reflection mirror 1023j, and then also reflected by the dichroic mirror 1023b to transmit the incident side polarizing plate 1037g and p-polarized light, and s-polarized light. Is incident on the electro-optical device 100 for green (G) as p-polarized light via the wire grid polarizing plate 1032g and the optical compensation plate 1039g.

  On the other hand, the blue (B) light reflected by the other second dichroic mirror 1031b constituting the cross dichroic mirror 1023a is reflected by the reflection mirror 1023k and passes through the incident side polarizing plate 1037b and the p-polarized light. On the other hand, it enters the electro-optical device 100 for blue (B) as p-polarized light through the wire grid polarizing plate 1032b that reflects s-polarized light and the optical compensation plate 1039b. The optical compensation plates 1039r, 1039g, and 1039b optically compensate for the characteristics of the liquid crystal layer by adjusting the polarization state of the incident light and the emitted light to the electro-optical device 100.

  In the projection display apparatus 1000 configured as described above, the three colors of light incident through the optical compensation plates 1039r, 1039g, and 1039b are modulated by the electro-optical devices 100, respectively. At this time, of the modulated light emitted from the electro-optical device 100, the s-polarized component light is reflected by the wire grid polarizers 1032r, 1032g, and 1032b, and cross-dichroic via the exit-side polarizers 1038r, 1038g, and 1038b. Incident on the prism 1027. In the cross dichroic prism 1027, a first dielectric multilayer film 1027a and a second dielectric multilayer film 1027b intersecting in an X shape are formed, and the first dielectric multilayer film 1027a reflects R light, The other second dielectric multilayer film 1027b reflects B light. Therefore, the three colors of light are combined by the cross dichroic prism 1027 and emitted to the projection optical system 1029. The projection optical system 1029 projects the color image light combined by the cross dichroic prism 1027 onto a screen (not shown) at a desired magnification.

(Other projection display devices)
In addition, about a projection type display apparatus, you may comprise the LED light source etc. which radiate | emit the light of each color as a light source part, and supply each color light radiate | emitted from this LED light source to another liquid crystal device. .

(Other electronic devices)
The electronic apparatus including the electro-optical device 100 to which the present invention is applied is not limited to the projection display device 1000 of the above embodiment. For example, you may use for electronic devices, such as a projection type HUD (head-up display), a direct view type HMD (head mounted display), a personal computer, a digital still camera, and a liquid crystal television.

3a ... scanning line, 3c ... gate electrode, 5b ... capacitance electrode, 6a ... data line, 6b, 6c, 7b ... relay electrode, 6d ... metal wiring, 6s ... constant potential line, 7d ... light absorption layer, 7e ... aluminum film , 7f ... titanium nitride film, 9a ... pixel electrode, 9b ... reflective electrode, 9u ... opening, 10 ... element substrate, 10a ... display region, 10b ... black display region, 20 ... counter substrate, 21 ... common electrode, 30 ... Pixel transistor, 45s ... Boron silicate glass layer, 50 ... Electro-optical layer, 100 ... Electro-optical device, 100p ... Liquid crystal panel, 107 ... Sealing material, 1000 ... Projection type display device, 1021 ... Light source unit, 1029 ... Projection optical system.

Claims (7)

An element substrate;
A counter substrate provided with a translucent common electrode on the side facing the element substrate;
A sealing material for bonding the element substrate and the counter substrate;
An electro-optic layer disposed in a region surrounded by the sealing material between the element substrate and the counter substrate;
Have
A display region in which a plurality of reflective pixel electrodes are formed on one side of the element substrate facing the counter substrate in the region surrounded by the sealing material, and the same potential as the common electrode is applied. A black display region formed on the one surface side of the element substrate so that a reflective electrode surrounds the display region,
An opening is provided in the reflective electrode, and the opening is seen in a plan view between the reflective electrode and the metal wiring provided on the side opposite to the counter substrate with respect to the reflective electrode of the element substrate. An electro-optical device characterized in that a light-absorbing layer overlapping with each other is provided. The electro-optical device according to claim 1.
An electro-optical device, wherein a boron silicate glass layer is exposed between each of the plurality of pixel electrodes and from the opening. The electro-optical device according to claim 1,
The electro-optical device, wherein the light absorption layer includes a conductive layer to which the same potential as that of the common electrode is applied. The electro-optical device according to claim 3.
The electro-optical device, wherein the light absorption layer is made of a metal layer or a metal compound layer constituting a wiring on the opposite side of the counter substrate with respect to the pixel electrode. The electro-optical device according to claim 4.
The electro-optical device, wherein the light absorption layer is made of a titanium nitride film. An element substrate;
A counter substrate provided with a translucent common electrode on the side facing the element substrate;
A sealing material for bonding the element substrate and the counter substrate;
An electro-optic layer disposed in a region surrounded by the sealing material between the element substrate and the counter substrate;
Have
A display region in which a plurality of reflective pixel electrodes are formed on one side of the element substrate facing the counter substrate in the region surrounded by the sealing material, and the same potential as the common electrode is applied. A black display region formed on the one surface side of the element substrate so that a reflective electrode surrounds the display region,
The electro-optical device is characterized in that the reflective electrode is formed on the entire surface of the black display region without forming an opening.   An electronic apparatus comprising the electro-optical device according to any one of claims 1 to 6.