JP2020160114A - Electro-optical device, electronic apparatus, and method for manufacturing electro-optical device - Google Patents

Abstract

To provide an electro-optical device capable of suppressing leakage of light in a peripheral region even when a light-transmitting holding capacitor is provided, and an electronic device.SOLUTION: In a transmissive electro-optical device 100, a first pixel electrode 9a is provided in a display region 10a of a first substrate 19, and a second pixel electrode 9b is provided in a first peripheral region 10c1 surrounding the display region 10a. Between the first substrate 19 and the first pixel electrode 9a, a light-transmitting first insulating film 44 having a recess 440 is provided. In the recess 440, a light-transmitting first holding capacitor 55a overlapping the first pixel electrode 9a and a light-transmitting second holding capacitor 55b overlapping the second pixel electrode 9b are provided. On the second substrate 29, a light-transmitting portion 20d is provided in the first peripheral region 10c1, and on the first substrate 19, a first light shielding layer 4a extending along an outer edge of the display region 10a is provided between the second holding capacitor 55b and a bottom of the recess 440.SELECTED DRAWING: Figure 7

Description

The present invention relates to an electro-optical device, an electronic device, and a method for manufacturing an electro-optical device in which a translucent holding capacity is electrically connected to a pixel electrode.

In an electro-optic device such as a transmissive liquid crystal device, a translucent first substrate on which a translucent pixel electrode and a transistor are formed and a translucent second substrate on which a translucent common electrode is formed are formed. An electro-optical layer is provided between the substrate and the light source, and when the light source light incident from the side of the second substrate is emitted from the side of the first substrate, the light source light is modulated by the electro-optical layer. In an electro-optical device, when each pixel is provided with a holding capacity electrically connected to a pixel electrode, a first translucent electrode, a dielectric film, and a second translucent electrode are provided in a region overlapping the pixel electrode. As a result, a technique has been proposed in which light is blocked by the holding capacity while securing a wide holding capacity forming region in each pixel (see Patent Document 1).

Japanese Unexamined Patent Publication No. 2013-73037

In the electro-optical device, a dummy pixel similar to the display area may be provided in the peripheral area surrounding the display area, and in this case, the dummy pixel is also formed with a translucent holding capacitance. Therefore, the light-shielding property of the peripheral region is lower than that of the case where the holding capacity is formed by the light-shielding conductive layer provided in the region overlapping between the adjacent pixel electrodes. Therefore, when a light-transmitting holding capacity is provided as in the technique described in Patent Document 1, light leakage is likely to occur when light is incident on the peripheral region from the side of the second substrate. There are challenges.

In order to solve the above problems, one aspect of the electro-optical device of the present invention includes a translucent first substrate, a first pixel electrode arranged in a display area of the first substrate, and the first substrate. The second pixel electrode arranged in the first peripheral region surrounding the display area is arranged between the first substrate and the first pixel electrode, and between the first substrate and the second pixel electrode. A translucent first insulating film having a recessed portion toward the first substrate, a translucent first holding capacity arranged in the recessed portion and overlapping with the first pixel electrode in a plan view, and the above. Between the translucent second holding capacitance arranged in the recess and overlapping the second pixel electrode in a plan view, the second holding capacitance provided in the first peripheral region, and the bottom of the recess. It is characterized in that a first light-shielding layer extending along the outer edge of the display area is provided.

In one aspect of the method for manufacturing an electro-optical device according to the present invention, a first step of forming a first insulating film on a translucent first substrate and a recess recessed in the first insulating film toward the first substrate. A translucent first capacitance electrode and a translucent second capacitance electrode that overlaps the first capacitance electrode via a translucent dielectric film are provided at the bottom of the recess. The third step of forming the plurality of holding capacities provided, the fourth step of forming the first insulating film and the second insulating film overlapping the plurality of holding capacities, and the plurality of holdings in the second insulating film. It has a fifth step of forming a plurality of translucent pixel electrodes at positions overlapping each of the capacitances in a plan view, and surrounds the display area after the second step and before the third step. It is characterized in that a first light-shielding layer forming step of forming a first light-shielding layer extending along the outer edge of the display area in the first peripheral region is performed.

The electro-optical device according to the present invention is used in various electronic devices. In the present invention, when an electro-optical device is used as a projection-type display device among electronic devices, the projection-type display device is modulated by a light source unit that emits light supplied to the electro-optical device and an electro-optical device. A projection optical system for projecting light is provided.

The plan view which shows one aspect of the electro-optic device to which this invention is applied. FIG. 2 is a cross-sectional view taken along the line HH'of the electro-optical device shown in FIG. The block diagram which shows the electrical structure of the electro-optical device shown in FIG. The plan view of the pixel of the electro-optic device shown in FIG. FIG. 4 is a cross-sectional view taken along the line FF'of the pixels shown in FIG. The explanatory view which shows the cross section in the light-shielding part of the electro-optic device shown in FIG. Explanatory drawing which shows the cross section in the translucent part of the electro-optic device shown in FIG. The schematic block diagram of the projection type display device (electronic device) using the electro-optical device to which this invention is applied.

Embodiments of the present invention will be described with reference to the drawings. In the drawings referred to in the following description, the scales are different for each layer and each member in order to make each layer and each member recognizable in the drawing. Further, in the following description, two directions intersecting each other in the in-plane direction of the first substrate 19 will be described as the X-axis direction and the Y-axis direction. Further, when explaining the layer formed on the first substrate 19, the upper layer side or the surface side means the side opposite to the side where the first substrate 19 is located (the side where the second substrate 29 is located), and the lower layer. The side means the side on which the first substrate 19 is located.

(overall structure)
FIG. 1 is a plan view showing an aspect of the electro-optical device 100 to which the present invention is applied, and shows a state in which the electro-optic device 100 is viewed from the side of the second substrate 29 together with each component. FIG. 2 is a cross-sectional view taken along the line HH'of the electro-optic device 100 shown in FIG.

As shown in FIGS. 1 and 2, in the electro-optical device 100, a liquid crystal panel in which a translucent first substrate 19 and a translucent second substrate 29 are bonded to each other by a sealing material 107 through a predetermined gap. It has 100p. In this embodiment, the electro-optical device 100 has a liquid crystal panel 100p in VA (Vertical Alignment) mode. The sealing material 107 is provided in a rectangular frame shape along the outer edge of the second substrate 29. The sealing material 107 is an adhesive made of a photocurable resin, a thermosetting resin, or the like, and contains a gap material 107a such as glass fiber or glass beads for setting a predetermined value between the two substrates. .. In the electro-optical device 100, the electro-optical layer 50 made of a liquid crystal layer is held in the region between the first substrate 19 and the second substrate 29 and surrounded by the sealing material 107. The sealing material 107 is formed with a break portion 107c used as a liquid crystal injection port, and the break portion 107c is closed by the sealing material 108 after the liquid crystal material is injected. After forming the sealing material 107 on the first substrate 19 in an endless frame shape, an electro-optical layer 50 is provided inside the sealing material 107, and then the second substrate 29 is bonded to the first substrate 19 by the sealing material 107. You may.

Both the first substrate 19 and the second substrate 29 are quadrangular, and a display region 10a is provided as a quadrangular region at substantially the center of the liquid crystal panel 100p. Corresponding to such a shape, the sealing material 107 is also provided in a substantially quadrangular shape, and the outside of the display area 10a is a square frame-shaped peripheral area 10c. The peripheral region 10c includes a first peripheral region 10c1 that surrounds the display region 10a and a second peripheral region 10c2 that surrounds the first peripheral region 10c1.

The first substrate 19 is a substrate main body of the element substrate 10, and is a translucent substrate such as a quartz substrate or a glass substrate. As will be described in detail later, in the one surface 10s of the first substrate 19 facing the second substrate 29, the display area 10a and the first peripheral area 10c1 include a transistor for pixel switching (not shown) and a transistor. A plurality of pixel electrodes 9 electrically connected to the pixel electrodes 9 are formed in a matrix, and a first alignment film 16 is formed on the upper layer side of the pixel electrodes 9.

In the second peripheral region 10c2 of the peripheral region 10c, a data line drive circuit 101 and a plurality of terminals 102 are formed along one side of the first substrate 19, and along the other side adjacent to this one side. The scanning line drive circuit 104 is formed. A flexible wiring board (not shown) is connected to the terminal 102, and various potentials and various signals are input to the first board 19 via the flexible wiring board.

The second substrate 29 is a substrate main body of the opposing substrate 20, and is a translucent substrate such as a quartz substrate or a glass substrate. A common electrode 21 made of a translucent conductive film such as an ITO film and a second alignment film 26 are formed on one surface 29s of the second substrate 29 on the electro-optical layer 50 side.

In the second substrate 29, in the first peripheral region 10c1, a second light-shielding layer 27a constituting the parting line 27 is formed on the lower layer side of the common electrode 21, and is between the second light-shielding layer 27a and the common electrode 21. A protective layer 28 is formed on the surface. In the present embodiment, the second light-shielding layer 27a is composed of a light-shielding layer containing aluminum as a main component.

In the present embodiment, the first peripheral region 10c1 is formed with a light-shielding portion 20c in which the second light-shielding layer 27a is formed and a light-transmitting portion 20d in which the second light-shielding layer 27a does not exist. The light-transmitting portion 20d is composed of an opening penetrating the second light-shielding layer 27a or a broken portion of the second light-shielding layer 27a. On the side of one surface 29s of the second substrate 29, a black matrix portion may be formed on the lower layer side of the common electrode 21 so as to overlap the inter-pixel region 10f sandwiched by the adjacent pixel electrodes 9 in a plan view. is there. In that case, the black matrix portion is composed of the same light-shielding layer as the second light-shielding layer 27a. Further, on the side of one surface 29s of the second substrate 29, a lens that overlaps with the pixel electrode 9 in a plan view may be formed.

In the electro-optical device 100, electrode portions 25t for inter-board conduction are formed at four corners on the side of one surface 29s of the second substrate 29 outside the sealing material 107, and one surface 10s of the first substrate 19 is formed. The inter-board conduction electrode portion 6t is formed at a position facing the four corners (inter-board conduction electrode portion 25t) of the second substrate 29. In the present embodiment, the inter-board conduction electrode portion 25t is composed of a part of the common electrode 21. The electrode portion 6t for inter-board conduction is conducting to the wiring 6s to which the common potential Vcom is applied. An inter-board conductive material 109 containing conductive particles is arranged between the inter-board conduction electrode portion 6t and the inter-board conduction electrode portion 25t, and the common electrode 21 of the second substrate 29 is an inter-board conduction. It is electrically connected to the first substrate 19 side via a general electrode portion 6t, an inter-board conduction material 109, and an inter-board conduction electrode portion 25t. Therefore, the common potential Vcom is applied to the common electrode 21 from the side of the first substrate 19.

In the electro-optical device 100 having such a configuration, in the present embodiment, the pixel electrode 9 and the common electrode 21 are formed of a translucent conductive film such as an ITO (Indium Tin Oxide) film or an IZO (Indium Zinc Oxide) film. The optical device 100 is a transmissive liquid crystal device. In such a transmission type electro-optic device 100, as shown by an arrow L in FIG. 2, the light incident from the side of the second substrate 29 is modulated while being emitted through the first substrate 19 to display an image. To do.

The electro-optical device 100 can be used as a color display device for electronic devices such as mobile computers and mobile phones. In this case, color filters (not shown) are formed on the first substrate 19 and the second substrate 29. To. Further, in the electro-optical device 100, a polarizing film, a retardation film, a polarizing plate, etc. are applied to the liquid crystal panel 100p according to the type and orientation direction of the electro-optical layer 50 to be used and the normal white mode / normal black mode. Are arranged in a predetermined direction. Further, the electro-optical device 100 can be used as a light bulb for RGB in a projection type display device (liquid crystal projector) described later. In this case, a color filter is not formed because the light of each color decomposed through the dichroic mirror for RGB color separation is incident on each of the respective electro-optical devices 100 for RGB as projected light. ..

(Electrical configuration)
FIG. 3 is a block diagram showing an electrical configuration of the electro-optical device 100 shown in FIG. Note that FIG. 1 is a block diagram showing only an electrical configuration, and does not show the shapes, extending directions, layouts, etc. of wirings and electrodes. As shown in FIG. 3, in the electro-optical device 100, a plurality of pixels 100a are arranged in a matrix in a display region 10a and a first peripheral region 10c1. In the first substrate 19, a plurality of data lines 6a (image signal lines) and a plurality of scanning lines 3a extend vertically and horizontally inside the display area 10a and the first peripheral area 10c1, and correspond to their intersections. Pixels 100a are configured at the positions.

A transistor 30 made of a field effect transistor and a pixel electrode 9 are formed in each of the plurality of pixels 100a. A data line 6a is electrically connected to the source of the transistor 30, a scanning line 3a is electrically connected to the gate of the transistor 30, and a pixel electrode 9 is electrically connected to the drain of the transistor 30. ..

In the first substrate 19, the data line drive circuit 101 formed in the second peripheral region 10c2 is electrically connected to each data line 6a, and the image signal supplied from the image processing circuit is sequentially connected to each data line 6a. Supply. Further, in the first substrate 19, the scanning line drive circuit 104 formed in the second peripheral region 10c2 is electrically connected to each scanning line 3a, and the scanning signal is sequentially supplied to each scanning line 3a.

In each pixel 100a, the pixel electrode 9 faces the common electrode 21 formed on the second substrate 29 (see FIG. 2 and the like) via the electro-optical layer 50, and constitutes a liquid crystal capacity 50a. A holding capacity 55 is added to each pixel 100a in parallel with the liquid crystal capacity 50a in order to prevent fluctuations in the image signal held by the liquid crystal capacity 50a. In the present embodiment, in order to form the holding capacity 55, a first capacitance electrode 51 straddling a plurality of pixels 100a is formed on the first substrate 19, and the first capacitance electrode 51 is formed via, for example, wiring 6s. A common potential Vcom is applied.

(Specific configuration of pixels, etc.)
FIG. 4 is a plan view of the pixel 100a of the electro-optical device 100 shown in FIG. FIG. 5 is a cross-sectional view taken along the line FF'of the pixel 100a shown in FIG. In FIG. 4, each layer is shown by the following line. Further, in FIG. 4, the positions of the ends of the layers in which the ends overlap each other are shifted so that the shape of the layers can be easily understood.
Lower layer 1st wiring 8a = Thin and long dashed line Semiconductor layer 1a = Thin and short dotted line Scanning line 3a = Thick solid line Drain electrode 5a = Thick two-dot chain line Data line 6a = Thin one-dot chain line Second wiring 7a and relay electrode 7b = Thin two-dot chain line 2nd capacitive electrode 52 = thin solid line Pixel electrode 9 = thick and long dashed line

As shown in FIG. 4, pixel electrodes 9 are formed on each of the plurality of pixels 100a on one surface 10s of the first substrate 19. In the present embodiment, the pixel electrodes 9 have a substantially square planar shape, and extend in the vertical direction (Y-axis direction) and the horizontal direction (X-axis direction) between adjacent pixel electrodes 9 on the first substrate 19. A first wiring 8a, a data line 6a, a scanning line 3a, and a second wiring 7a are formed along the existing inter-pixel region 10f. The first wiring 8a and the scanning line 3a extend so as to overlap the first inter-pixel region 10g extending in the X-axis direction (first direction) in the inter-pixel region 10f, and the data line 6a and the second The wiring 7a extends so as to overlap the second inter-pixel region 10h extending in the Y-axis direction (second direction). The transistor 30 is formed corresponding to the intersection of the data line 6a and the scanning line 3a, and the transistor 30 is formed by utilizing the intersection region of the data line 6a and the scanning line 3a and its vicinity. The first wiring 8a includes a main line portion extending linearly so as to overlap the scanning line 3a, and a sub line portion extending linearly so as to overlap the data line 6a at the intersection of the data line 6a and the scanning line 3a. There is.

As shown in FIG. 5, on the one side 10s side of the first substrate 19, a first wiring 8a made of a light-shielding conductive film such as a conductive polysilicon film, a metal silicide film, a metal film or a metal compound film is provided. It is formed. In the present embodiment, the first wiring 8a is made of a light-shielding layer such as tungsten silicide (WSi), and when the light after passing through the electro-optical device 100 is reflected by another member, the reflected light is incident on the transistor 30. Suppress that.

In the first substrate 19, a translucent interlayer insulating film 40 such as silicon oxide is formed on the upper layer side of the first wiring 8a, and the transistor 30 provided with the semiconductor layer 1a on the surface of the interlayer insulating film 40. Is formed. The surface of the interlayer insulating film 40 is flattened by a CMP treatment (Chemical Mechanical Polishing treatment). The transistor 30 includes a semiconductor layer 1a extending along the data line 6a and a gate electrode 3c extending in a direction orthogonal to the semiconductor layer 1a and overlapping a part of the extending direction of the semiconductor layer 1a. .. The transistor 30 has a translucent gate insulating layer 2 between the semiconductor layer 1a and the gate electrode 3c.

The semiconductor layer 1a includes a channel region 1g facing the gate electrode 3c via the gate insulating layer 2, and also includes a source region 1b and a drain region 1c on both sides of the channel region 1g. The transistor 30 has an LDD (Lightly Doped Drain) structure. Therefore, each of the source region 1b and the drain region 1c has a low concentration region on both sides of the channel region 1g, and has a high concentration region in a region adjacent to the low concentration region on the opposite side of the channel region 1g.

The semiconductor layer 1a is made of a polysilicon film (polycrystalline silicon film) or the like. The gate insulating layer 2 has a two-layer structure consisting of a first gate insulating layer 2a made of silicon oxide obtained by thermally oxidizing the semiconductor layer 1a and a second gate insulating layer 2b made of silicon oxide formed by a reduced pressure CVD method or the like. .. The gate electrode 3c is composed of a part of the scanning line 3a, and the scanning line 3a is composed of a light-shielding conductive film such as a conductive polysilicon film, a metal silicide film, a metal film, or a metal compound film. In the present embodiment, the scanning lines 3a are electrically connected to the first wiring 8a via contact holes 40a penetrating the gate insulating layer 2 and the interlayer insulating film 40 on both sides of the semiconductor layer 1a. Therefore, the first wiring 8a functions as a back gate for the transistor 30. Further, the light-shielding conductive material located inside the contact hole 40a constitutes a light-shielding wall for the semiconductor layer 1a.

A translucent interlayer insulating film 41 made of silicon oxide or the like is formed on the upper layer side of the gate electrode 3c and the scanning line 3a, and a drain electrode 5a is formed on the upper layer of the interlayer insulating film 41. The drain electrode 5a is made of a light-shielding conductive film such as a conductive polysilicon film, a metal silicide film, a metal film, or a metal compound film. The drain electrode 5a conducts to the drain region 1c via the contact hole 41a penetrating the interlayer insulating film 41 and the gate insulating layer 2.

A translucent interlayer insulating film 42 made of silicon oxide or the like is formed on the upper layer side of the drain electrode 5a, and a data line 6a is formed on the upper layer side of the interlayer insulating film 42. The data line 6a is made of a light-shielding conductive film such as a conductive polysilicon film, a metal silicide film, a metal film, or a metal compound film. The data line 6a is conductive to the source region 1b via the interlayer insulating films 41 and 42 and the contact hole 42a penetrating the gate insulating layer 2.

A translucent interlayer insulating film 43 made of silicon oxide or the like is formed on the upper layer side of the data line 6a, and the light-shielding second wiring 7a and the relay electrode 7b are the same on the upper layer of the interlayer insulating film 43. It is formed by a conductive film. The surface of the interlayer insulating film 43 is flattened. The second wiring 7a and the relay electrode 7b are made of a conductive film such as a conductive polysilicon film, a metal silicide film, a metal film, or a metal compound film. The relay electrode 7b is electrically connected to the drain electrode 6b via a contact hole 43a penetrating the interlayer insulating films 42 and 43. The second wiring 7a is a constant potential line to which a constant potential is applied, and functions as a light-shielding layer and a shield layer.

On the upper layer side of the second wiring 7a and the relay electrode 7b, a translucent first insulating film 44 (interlayer insulating film) made of silicon oxide or the like and a translucent second insulating film 45 made of silicon oxide or the like (interlayer insulating film) An interlayer insulating film) is formed, and a pixel electrode 9 made of a translucent conductive film such as an ITO film is formed on the upper layer of the second insulating film 45. The surface of the second insulating film 45 is flattened by CMP treatment. A first alignment film 16 is formed on the surface side of the pixel electrode 9.

In this embodiment, the first alignment film 16 and the second alignment film 26 are SiO _X (x <2), SiO ₂ , TiO ₂ , MgO, Al ₂ O ₃ , In ₂ O ₃ , Sb ₂ O ₃ , Ta ₂ O columnar structure consisting of oblique deposition film such as ₅ a (tilted perpendicular alignment film / inorganic alignment film). In the first alignment film 16 and the second alignment film 26, a nematic liquid crystal compound having an anti-parallel orientation regulating force and a negative dielectric anisotropy used for the electro-optical layer 50 is schematically used, and a liquid crystal molecule 50b is schematically drawn with a solid line L1. As shown in the above, the tilting and vertical orientation is performed in a posture inclined in a normal direction with respect to the first substrate 19 and a certain direction (pre-tilt direction) from the normal direction with respect to the second substrate 29. Therefore, the liquid crystal molecule 50b is inclined like the dotted line L2 by the electric field between the pixel electrode 9 and the common electrode 21. In this way, the liquid crystal panel 100p is configured as a normally black VA mode liquid crystal panel.

(Structure of holding capacity 55)
Between the first insulating film 44 and the second insulating film 45, a first capacitance electrode 51 made of a translucent conductive film such as an ITO film, which is translucent, is located in a region overlapping the pixel electrode 9 in a plan view. A translucent holding capacity 55 is configured in which a second capacitance electrode 52 made of a translucent conductive film such as a dielectric film 53 and an ITO film is laminated in this order. The dielectric film 53 is a single-layer film such as silicon oxide, silicon nitride, aluminum oxide, hafnium oxide, or tantalum oxide, or a laminated film thereof, and has a thickness of 20 nm to 40 nm. The thickness of the first capacitance electrode 51 and the second capacitance electrode 52 is, for example, 100 to 200 nm.

The first capacitance electrode 51 on the lower layer side is formed so as to overlap the plurality of pixel electrodes 9 in a plan view, and a common potential Vcom is applied. The first capacitance electrode 51 is formed, for example, on substantially the entire surface of the display region 10a and the first peripheral region 10c1. The second capacitance electrode 52 on the upper layer side is divided into each pixel electrode 9, and is electrically connected to the pixel electrode 9 via a contact hole 45a penetrating the second insulating film 45.

The second capacitance electrode 52 is electrically connected to the relay electrode 7b via a contact hole 44a penetrating the dielectric film 53 and the first insulating film 44. Therefore, the pixel electrode 9 is electrically connected to the drain region 1c via the second capacitance electrode 52, the relay electrode 7b, and the drain electrode 5a. An opening is formed in the first capacitance electrode 51 in order to avoid contact between the contact hole 44a and the first capacitance electrode 51.

In this embodiment, as will be described later with reference to FIGS. 6 and 7, recesses 440 are formed on the surface of the first insulating film 44 over the entire area of the display region 10a and the first peripheral region 10c1 and are retained. The capacitance 55 and the pixel electrode 9 are provided in a region overlapping the recess 440 in a plan view. Further, in the present embodiment, a translucent third insulating film 49 made of silicon oxide or the like is provided at the bottom of the recess 440.

(Drive circuit configuration)
Although not shown, the data line drive circuit 101 and the scanning line drive circuit 104 described with reference to FIGS. 1 and 3 include an n-channel type drive transistor and a p-channel type drive transistor. Complementary transistor circuits and the like are configured. Here, the driving transistor is formed by utilizing a part of the manufacturing process of the transistor 30. Therefore, the driving transistor in which the data line driving circuit 101 and the scanning line driving circuit 104 are formed has a cross-sectional structure substantially similar to the cross-sectional structure of the transistor 30 shown in FIG.

(Orientation direction of liquid crystal molecule 50b)
The first alignment film 16 or the second alignment film 26 is, for example, an electro-optical layer in a direction forming an angle of 45 degrees or 135 degrees with respect to each side 10a6, 10a7, 10a8, 10a9 of the display region 10a shown in FIG. The 50 liquid crystal molecules 50b are oriented. Therefore, the liquid crystal molecules 50b are oriented in the direction along the diagonal line connecting the corners 10a1 and 10a3 among the four corners 10a1 to 10a4 of the display region 10a. Among the liquid crystal molecules 50b, the liquid crystal molecules 50b located near the surface of the first substrate 19 are in a state where one end of the molecular chain is held on the side of the first substrate 19, and are near the surface of the second substrate 29. The liquid crystal molecule 50b located in is in a state where the other end of the molecular chain is held on the side of the second substrate 29.

(Detailed configuration of closeout 27 (second light-shielding layer 27a))
Again, in FIG. 1, the first peripheral region 10c1 is provided with a light-shielding portion 20c on which a second light-shielding layer 27a is formed, and a light-transmitting portion 20d formed of a discontinuous portion or an opening of the second light-shielding layer 27a. .. In the present embodiment, the first peripheral region 10c1 is provided with a light-shielding portion 20c along the sides 10a6 to 10a9 of the display region 10a, and the corners 10a1 and 10a3 of the display region 10a correspond to the orientation direction of the liquid crystal molecules 50b. A translucent portion 20d is provided on the outside. In this embodiment, the light transmitting portion 20d is also provided outside the corners 10a2 and 10a4 of the display area 10a.

In the electro-optical device 100 of the present embodiment, an image is displayed by injecting light from the light source from the side of the second substrate 29 and changing the posture of the liquid crystal molecules 50b by the pixel electrodes 9. At that time, as the posture of the liquid crystal molecules 50b changes, impurities mixed during filling of the electro-optical layer 50 and impurities eluted from the sealing material 107 move toward the side in which the liquid crystal molecules 50b are oriented in the display region 10a. Aggregate. Here, the place where impurities are most likely to be concentrated is expected to be a part having a long distance in the direction in which the liquid crystal molecules 50b are oriented (the direction in which the impurities move) in the display region 10a. Therefore, the places where impurities are most likely to concentrate are around the two corners 10a1 and 10a3 located on the side where the liquid crystal molecules 50b are oriented (the side indicated by the arrow P).

Here, when light is incident on the electro-optical layer 50 from the side of the second substrate 29, since the impurities are active, the impurities move in the orientation direction of the liquid crystal molecules 50b while remaining in the activated state. On the other hand, in the electro-optical layer 50 located in the light-shielding portion 20c of the electro-optic layer 50 in the first peripheral region 10c1, light does not reach by the second light-shielding layer 27a, so that impurities become inactive and the display area Impurities that have moved toward the light-shielding portion 20c in 10a are stagnant in the first peripheral region 10c1.

However, in the present embodiment, since the outside of the corners 10a1 and 10a3 of the display region 10a where impurities are likely to concentrate is the translucent portion 20d, it is located at the translucent portion 20d of the electro-optical layer 50 of the first peripheral region 10c1. Light reaches the electro-optical layer 50. Therefore, the impurities that have moved toward the translucent portion 20d move to the outside of the first peripheral region 10c1 in the active state. Therefore, even if the corners 10a1 and 10a3 of the display region 10a where impurities are likely to be concentrated, it is possible to suppress a large amount of impurities from aggregating inside the display region 10a, so that the image is burned in due to the aggregated impurities. Deterioration of display quality such as (stains) is unlikely to occur.

On the other hand, if the light transmitting portion 20d is provided in the first peripheral region 10c1, light leakage due to the light transmitting portion 20d occurs around the display region 10a. Therefore, in the present embodiment, FIGS. 6 and 7 are shown. The configuration described below with reference is adopted.

(Structure of the first light-shielding layer 4a)
FIG. 6 is an explanatory view showing a cross section of the light-shielding portion 20c of the electro-optical device 100 shown in FIG. 1, and FIG. 6 schematically shows a CC'cross section of FIG. FIG. 7 is an explanatory view showing a cross section of the translucent portion 20d of the electro-optical device 100 shown in FIG. 1, and FIG. 7 schematically shows a D-D'cross section of FIG.

As described with reference to FIG. 3 and the like, in the electro-optical device 100, a plurality of pixels 100a having a pixel electrode 9 and a holding capacity 55 are arranged in a matrix in the display area 10a and the first peripheral area 10c1. ing. In the following description, of the plurality of pixels 100a, the pixel 100a in the display area 10a is the first pixel 100a1, the pixel electrode 9 provided in the first pixel 100a is the first pixel electrode 9a, and the first pixel 100a1 is provided. Let the obtained holding capacity 55 be the first holding capacity 55a. On the other hand, among the plurality of pixels 100a, the pixel 100a of the first peripheral region 10c1 is the second pixel 100a2, the pixel electrode 9 provided in the second pixel 100a2 is the second pixel electrode 9b, and the second pixel 100a2. The holding capacity 55 provided in the above is referred to as a second holding capacity 55b. Of the pixel electrodes 9, the first pixel electrode 9a formed in the display region 10a is applied with an image signal and directly contributes to the display. A constant potential such as a common potential Vcom is applied to the second pixel electrode 9b formed in the first peripheral region 10c1, and the second pixel 100a2 is displayed in black. In addition, the structure may be such that adjacent second pixel electrodes 9b are connected to each other by a narrow connecting portion. Further, the second pixel electrode 9b may be put into a float state in a potential without applying a potential to the second pixel electrode 9b.

In this embodiment, as shown in FIGS. 6 and 7, in the display region 10a and the first peripheral region 10c1 of the translucent first substrate 19, between the first substrate 19 and the first pixel electrode 9a, and the first A translucent first insulating film 44 having a recess 440 recessed toward the first substrate 19 is formed between the first substrate 19 and the second pixel electrode 9b. Further, the recess 440 is provided with a translucent first holding capacity 55a that overlaps with the first pixel electrode 9a in a plan view and a translucent second holding capacity 55b that overlaps with the second pixel electrode 9b in a plan view. Has been done. The depth of the recess 440 is, for example, 200 nm to 400 nm. A translucent conductive film 9c in the same layer as the pixel electrode 9 is formed in the second peripheral region 10c2.

In the present embodiment, a first light-shielding layer 4a extending along the outer edge of the display area 10a is provided between the second holding capacity 55b provided in the first peripheral region 10c1 and the bottom of the recess 440. .. In this embodiment, a constant potential such as a common potential Vcom is applied to the first light-shielding layer 4a. The first light-shielding layer 4a may be in a potential float state.

In the present embodiment, the first light-shielding layer 4a extends continuously from the first peripheral region 10c1 to the second peripheral region 10c2, and in the second peripheral region 10c2, the first insulating film 44 and the second insulating film 45 A first light-shielding layer 4a is provided between the two. The first light-shielding layer 4a is made of a conductive film containing aluminum as a main component. In this embodiment, the first light-shielding layer 4a is provided over the entire area of the first peripheral region 10c1. Therefore, the light-shielding property of the first peripheral region 10c1 is lower than that of the case where the holding capacity is formed by the light-shielding conductive layer provided in the region overlapping between the adjacent pixel electrodes 9, but the first from the side of the second substrate 29. Even when light is incident on the peripheral region 10c1, leakage of light can be suppressed by the first light-shielding layer 4a.

Further, the surface of the second insulating film 45 interposed between the first holding capacity 55a and the first pixel electrode 9a and between the second holding capacity 55b and the second pixel electrode 9b is flat. Therefore, the thickness of the second insulating film 45 in the display region 10a is thicker than that in the first peripheral region 10c1.

In this embodiment, the third insulating film 49 is formed to have a constant thickness on the surfaces of the first insulating film 44 on the side of the first pixel electrode 9a and the second pixel electrode 9b. Therefore, a third insulation is provided between the first light-shielding layer 4a and the first capacitance electrode 51 having the second holding capacity 55b, and between the bottom of the recess 440 and the first capacitance electrode 51 having the first holding capacitance 55a. A film 49 is provided. Therefore, different potentials may be applied to the first light-shielding layer 4a and the first capacitance electrode 51 having the second holding capacitance 55b.

Further, between the first substrate 19 and the first holding capacity 55a, and between the first substrate 19 and the second holding capacity 55b, a light-shielding second wiring 7a, a light-shielding scanning line 3a, and a light-shielding property are provided. The data line 6a and the light-shielding first wiring 8a extend along the end of the first pixel electrode 9a and the end of the second pixel electrode 9b in a plan view. Here, at least one of the second wiring 7a, the scanning line 3a, the data line 6a, and the first wiring 8a is on the upper layer side (first layer and first holding capacity) with respect to the first layer containing aluminum as a main component. It includes a second layer laminated between 55a and between the first layer and the second holding capacity 55b).

In the present embodiment, for example, the second wiring 7a, the scanning line 3a, and the data line 6a are formed on the first layer containing aluminum as a main component and on the upper layer side (first layer and first holding capacity) with respect to the first layer. It includes a second layer laminated between 55a and between the first layer and the second holding capacity 55b), and the second layer is made of a light-absorbing conductive film such as titanium nitride. Therefore, in the present embodiment, the light-shielding property of the first peripheral region 10c1 is lower than that of the case where the holding capacity is formed by the light-shielding conductive layer provided in the region overlapping between the adjacent pixel electrodes 9, but the second substrate 29 Even when light is incident on the first peripheral region 10c1 from the side, light leakage and unnecessary reflection can be suppressed by the second wiring 7a, the scanning line 3a, the data line 6a, and the like.

(Manufacturing method of electro-optical device 100)
In the manufacturing process of the electro-optical device 100 described with reference to FIGS. 6 and 7, in the first step, after forming the first insulating film 44 on the first substrate 19, the surface of the first insulating film 44 is CMP. Flatten by processing. Next, in the second step, a recess 440 recessed toward the first substrate 19 is formed in the first insulating film 44 by anisotropic dry etching or the like.

Next, in the third step, the translucent first capacitance electrode 51, the translucent dielectric film 53, and the translucent second capacitance electrode 52 are sequentially formed so as to overlap the bottom of the recess 440. , Forming a plurality of translucent holding capacities 55.

Next, in the fourth step, after the first insulating film 44 and the second insulating film 45 overlapping the plurality of holding capacities 55 are formed, the surface of the second insulating film 45 is flattened by CMP treatment. Next, in the fifth step, a plurality of translucent pixel electrodes 9 are formed at positions of the second insulating film 45 that overlap each of the plurality of holding capacities 55 in a plan view.

In such a manufacturing method, after the second step and before the third step, a first light-shielding layer forming step of forming the first light-shielding layer 4a over the entire area of the first peripheral area 10c1 surrounding the display area 10a was performed. After that, the first insulating film 44 and the third insulating film 49 covering the first light-shielding layer 4a are formed. As a result, the first light-shielding layer 4a is formed in the first peripheral region 10c1 along the outer edge of the display region 10a.

In such a configuration, in the state of a large substrate larger than the first substrate 19, the first step, the second step, the third step, the fourth step, the fifth step, and the first light-shielding layer forming step are performed, and then , The large substrate is divided into the first substrate 19. At that time, an alignment mark is provided in a region of the large substrate that overlaps with the light-shielding layer simultaneously formed with the first light-shielding layer 4a on the outside of the region divided as the first substrate 19. According to such a manufacturing method, the alignment mark can be formed at a position overlapping the light-shielding layer provided on the uppermost layer side among the plurality of light-shielding layers, so that the position of the alignment mark can be easily detected. Therefore, if the alignment mark is used after the first light-shielding layer 4a is formed, the holding capacity 55 and the mask or the like for forming the pixel electrode 9 or the like can be easily aligned with the large substrate.

(Main effect of this form)
As described above, in the electro-optical device 100 of the present embodiment, since the holding capacity 55 (first holding capacity 55a and second holding capacity 55b) is translucent, the first pixel electrode 9a and the first holding capacity 55 Even if the forming region of the first holding capacity 55a is widened by forming the capacity 55a so as to overlap in a plane, it is possible to suppress a decrease in the amount of display light. In this case, the light-shielding property is lower than when the holding capacity 55 is formed by the light-shielding conductive layer, but the first light-shielding layer 4a extending along the outer edge of the display area 10a is provided in the first peripheral region 10c1. It is provided. Therefore, in the region where the second substrate 29 is not provided with the second light-shielding layer 27a and overlaps with the translucent portion 20d in a plan view, even if the light is incident from the second substrate 29 side to the first substrate 19 side. Such light can be blocked by the first light-shielding layer 4a. Therefore, light leakage is unlikely to occur. Therefore, even when the aggregation of impurities in the display region 10a is suppressed by providing the light transmitting portion 20d in the first peripheral region 10c1, light leakage is unlikely to occur, so that the display quality deteriorates due to the light leakage. Can be suppressed.

Further, a height difference is likely to occur between the first peripheral region 10c1 and the display region 10a due to the presence or absence of the first light-shielding layer 4a, but between the first holding capacity 55a and the first pixel electrode 9a, and the first The surface of the second insulating film 45 interposed between the 2 holding capacitance 55b and the second pixel electrode 9b is flattened by the CMP treatment. Therefore, the first pixel electrode 9a and the second pixel electrode 9b can be provided on a flat surface. Therefore, when the first alignment film 16 is formed by oblique vapor deposition or the like, the first alignment film 16 can be properly formed even at the outer peripheral end of the display region 10a, so that the liquid crystal molecules 50b are properly oriented. Can be done.

Further, since the first holding capacity 55a and the second holding capacity 55b are provided in the region overlapping the recess 440 of the first insulating film 44, the display region 10a and the first periphery are provided in a state before the second insulating film 45 is flattened. The height difference between the surfaces of the second insulating film 45 in the region 10c1 and the second peripheral region 10c2 is small. Therefore, the CMP treatment on the second insulating film 45 can be appropriately performed.

[Other embodiments]
In the above embodiment, the common potential Vcom is applied to the first capacitance electrode 51 on the lower layer side, and the second capacitance electrode 52 on the upper layer side is electrically connected to the pixel electrode 9, but the first capacitance Vcom to which the common potential Vcom is applied is applied. The capacitance electrode 51 may be provided on the upper layer side of the second capacitance electrode 52 that is electrically connected to the pixel electrode 9. In the above embodiment, the first light-shielding layer 4a is provided over the entire area of the first peripheral region 10c1, but when the light-shielding portion 20c shown in FIG. 1 is provided on the second substrate 29, the region corresponding to the light-transmitting portion 20d. On the other hand, the first light-shielding layer 4a may be provided along the outer edge of the display area 10a.

[Example of mounting on electronic devices]
An electronic device using the electro-optical device 100 according to the above-described embodiment will be described. FIG. 8 is a schematic configuration diagram of a projection type display device using the electro-optical device 100 to which the present invention is applied. In FIG. 8, the illustration of an optical element such as a polarizing plate is omitted. The projection type display device 2100 shown in FIG. 8 is an example of an electronic device using the electro-optical device 100.

In the projection type display device 2100 shown in FIG. 8, the electro-optical device 100 according to the above embodiment is used as a light bulb, and high-definition and bright display is possible without enlarging the device. As shown in FIG. 8, a lamp unit 2102 (light source unit) having a white light source such as a halogen lamp is provided inside the projection type display device 2100. The projected light emitted from the lamp unit 2102 is converted into three primary colors of R (red), G (green), and B (blue) by the three mirrors 2106 and the two dichroic mirrors 2108 arranged inside. Be separated. The separated projected light is guided and modulated by the light bulbs 100R, 100G, and 100B corresponding to each primary color, respectively. Since the light of color B has a longer optical path than other colors R and G, it is guided through a relay lens system 2121 having an incident lens 2122, a relay lens 2123, and an exit lens 2124 in order to prevent the loss. Be taken.

The light modulated by the light bulbs 100R, 100G, and 100B is incident on the dichroic prism 2112 from three directions. Then, in the dichroic prism 2112, the R color and B color light are reflected at 90 degrees, and the G color light is transmitted. Therefore, after the images of the primary colors are combined, the color image is projected onto the screen 2120 by the projection lens group 2114 (projection optical system).

(Other projection type display devices)
The projection type display device may be configured to use an LED light source or the like that emits light of each color as a light source unit and supply the colored light emitted from the LED light source to another liquid crystal device. ..

(Other electronic devices)
The electronic device provided with the electro-optical device 100 to which the present invention is applied is not limited to the projection type display device 2100 of the above embodiment. For example, it may be used in electronic devices such as a projection type HUD (head-up display), a direct-view type HMD (head-mounted display), a personal computer, a digital still camera, and an LCD TV.

1a ... semiconductor layer, 1b ... source region, 1c ... drain region, 1g ... channel region, 2 ... gate insulating layer, 3a ... scanning line, 3c ... gate electrode, 4a ... first shading layer, 5a ... drain electrode, 6a ... Data line, 7a ... 2nd wiring, 7b ... Relay electrode, 8a ... 1st wiring, 9 ... Pixel electrode, 9a ... 1st pixel electrode, 9b ... 2nd pixel electrode, 10 ... Element substrate, 10a ... Display area, 10c ... peripheral region, 10c1 ... first peripheral region, 10c2 ... second peripheral region, 10f ... interpixel region, 10g ... first interpixel region, 10h ... second interpixel region, 16 ... first alignment film, 19 ... th 1 substrate, 20 ... opposed substrate, 20c ... light-shielding part, 20d ... translucent part, 21 ... common electrode, 26 ... second alignment film, 27 ... parting off, 27a ... second light-shielding layer, 29 ... second substrate, 30 ... Transistor, 44 ... 1st insulating film, 45 ... 2nd insulating film, 49 ... 3rd insulating film, 50 ... Electro-optical layer, 50b ... Liquid crystal molecule, 51 ... 1st capacitance electrode, 52 ... Second capacitance electrode, 53 ... Dielectric film, 55a ... 1st holding capacity, 55b ... 2nd holding capacity, 100 ... Electro-optical device, 100B, 100G, 100R ... Light valve, 100a ... Pixel, 100a1 ... 1st pixel, 100a2 ... 2nd pixel, 100p ... Liquid crystal panel, 440 ... Recessed, 2100 ... Projection type display device, 2102 ... Lamp unit (light source unit), 2114 ... Projection lens group (projection optical system).

Claims (9)

Translucent first substrate and
The first pixel electrode arranged in the display area of the first substrate and
A second pixel electrode arranged in a first peripheral region surrounding the display region of the first substrate, and
A translucent first substrate arranged between the first substrate and the first pixel electrode and between the first substrate and the second pixel electrode and having a recess recessed toward the first substrate. With an insulating film
A translucent first holding capacity that is arranged in the recess and overlaps with the first pixel electrode in a plan view.
A translucent second holding capacity that is arranged in the recess and overlaps with the second pixel electrode in a plan view,
A first light-shielding layer extending along the outer edge of the display area is provided between the second holding capacity provided in the first peripheral area and the bottom of the recess. Electro-optic device. In the electro-optical device according to claim 1,
A second insulating film is provided between the first holding capacity and the first pixel electrode, and between the second holding capacity and the second pixel electrode.
The second insulating film is an electro-optical device in which the thickness in the display region is thicker than the thickness in the first peripheral region. In the electro-optical device according to claim 1 or 2.
An electro-optical device characterized in that a third insulating film is provided between the bottom of the recess and the first holding capacity, and between the first light-shielding layer and the second holding capacity. In the electro-optical device according to any one of claims 1 to 3.
An electro-optical device, wherein the first light-shielding layer continuously extends from the first peripheral region to a second peripheral region surrounding the first peripheral region. In the electro-optical device according to any one of claims 1 to 4.
The first light-shielding layer is made of a conductive film containing aluminum as a main component.
Between the first substrate and the second holding capacity, from the first layer containing aluminum as a main component and the light-absorbing conductive film laminated between the first layer and the second holding capacity. An electro-optic device comprising a wiring provided with a second layer extending along an end portion of the second pixel electrode in a plan view. In the electro-optical device according to any one of claims 1 to 5.
It has a translucent second substrate facing the first substrate and has a second substrate.
The second substrate is provided with a parting line having a second light-shielding layer extending along the outer edge of the display area.
An electro-optical device provided with an opening penetrating the second light-shielding layer or a light-transmitting portion formed of a broken portion of the second light-shielding layer in the parting line. An electronic device comprising the electro-optical device according to any one of claims 1 to 6. The first step of forming the first insulating film on the translucent first substrate, and
A second step of forming a recess in the first insulating film toward the first substrate, and
A plurality of holding capacitances having a translucent first capacitance electrode and a translucent second capacitance electrode overlapping the first capacitance electrode via a translucent dielectric film are formed at the bottom of the recess. The third step to do
The fourth step of forming the first insulating film and the second insulating film overlapping the plurality of holding capacities, and
In the second insulating film, a fifth step of forming a plurality of translucent pixel electrodes at positions overlapping each of the plurality of holding capacities in a plan view,
Have,
After the second step and before the third step, a first light-shielding layer forming step of forming a first light-shielding layer extending along the outer edge of the display area is performed in the first peripheral area surrounding the display area. A method for manufacturing an electro-optical device. In the method for manufacturing an electro-optic device according to claim 8,
In the state of a large substrate larger than the first substrate, the first step, the second step, the third step, the fourth step, the fifth step, and the light-shielding layer forming step are performed.
An electro-optical apparatus for providing an alignment mark in a region of the large substrate that overlaps with a light-shielding layer simultaneously formed with the first light-shielding layer on the outside of a region divided as the first substrate. Production method.