JP2018078281A5 - - Google Patents
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- JP2018078281A5 JP2018078281A5 JP2017194427A JP2017194427A JP2018078281A5 JP 2018078281 A5 JP2018078281 A5 JP 2018078281A5 JP 2017194427 A JP2017194427 A JP 2017194427A JP 2017194427 A JP2017194427 A JP 2017194427A JP 2018078281 A5 JP2018078281 A5 JP 2018078281A5
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- 238000006243 chemical reaction Methods 0.000 claims description 37
- 239000012212 insulator Substances 0.000 claims description 29
- 239000012535 impurity Substances 0.000 claims description 26
- 239000004065 semiconductor Substances 0.000 claims description 26
- 238000001514 detection method Methods 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims 2
- 239000010949 copper Substances 0.000 claims 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 2
- 239000001257 hydrogen Substances 0.000 claims 2
- 229910052739 hydrogen Inorganic materials 0.000 claims 2
- 229910010272 inorganic material Inorganic materials 0.000 claims 2
- 239000011147 inorganic material Substances 0.000 claims 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminum Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 230000003321 amplification Effects 0.000 claims 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 150000002431 hydrogen Chemical class 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 238000003199 nucleic acid amplification method Methods 0.000 claims 1
- 230000003287 optical Effects 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N oxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical group [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
- 230000014759 maintenance of location Effects 0.000 description 1
Description
上記課題を解決するための第１の手段は、半導体層の中に配された電荷生成領域を各々が有する複数のユニットを備える光電変換装置であって、複数のユニットは第１ユニットおよび第２ユニットを含み、前記第１ユニットおよび前記第２ユニットのそれぞれは、前記電荷生成領域から転送された電荷を保持する電荷保持領域と、前記電荷生成領域の上に位置し、絶縁体層に囲まれ、前記絶縁体層とは異なる材料で形成された誘電体領域と、前記絶縁体層と前記半導体層との間にて前記電荷保持領域を覆い、前記電荷生成領域の上に第１開口部を有する第１遮光層と、電荷検出領域と、前記電荷保持領域と前記電荷検出領域との間に配されたゲート電極と、第２開口部と、前記第２開口部に配された、前記電荷検出領域の上に設けられた第１コンタクトプラグと、前記第２開口部に配された、前記ゲート電極の上に設けられた第２コンタクトプラグとを有し、前記第１ユニットの前記電荷生成領域は前記第１開口部を介して受光し、前記第２ユニットの前記電荷生成領域は第２遮光層で覆われていることを特徴とする。 The first means for solving the above-mentioned problems is a photoelectric conversion device including a plurality of units each having a charge generation region arranged in the semiconductor layer, and the plurality of units are the first unit and the second unit. Each of the first unit and the second unit, including the unit, is located above the charge generation region and a charge retention region that holds the charges transferred from the charge generation region, and is surrounded by an insulator layer. a dielectric region formed of a different material from that of the insulating layer, said covering the charge holding region in between the insulator layer and the semiconductor layer, a first opening on said charge generation region The first light-shielding layer, the charge detection region, the gate electrode arranged between the charge holding region and the charge detection region, the second opening, and the charge arranged in the second opening. It has a first contact plug provided above the detection region and a second contact plug provided above the gate electrode arranged in the second opening, and the charge generation of the first unit. The region receives light through the first opening , and the charge generation region of the second unit is covered with a second light-shielding layer .
上記課題を解決するための第２の手段は、複数のユニットを備える光電変換装置であって、複数のユニットは第１ユニットおよび第２ユニットを含み、前記第１ユニットおよび前記第２ユニットのそれぞれは、半導体層の中に配されたｎ型の第１不純物領域と、前記半導体層の中に配され、前記第１不純物領域から電荷が転送されるｎ型の第２不純物領域と、前記第１不純物領域の上に位置し、絶縁体層に囲まれ、前記絶縁体層とは異なる材料で形成された誘電体領域と、前記絶縁体層と前記半導体層との間にて前記第２不純物領域を覆い、前記第１不純物領域の上に第１開口部を有する第１遮光層と、前記第２不純物領域から電荷が伝送されるｎ型の第３不純物領域と、前記第２不純物領域と前記第３不純物領域との間に配されたゲート電極と、第２開口部と、前記第２開口部に配された、前記第３不純物領域の上に設けられた第１コンタクトプラグと、前記第２開口部に配された、前記ゲート電極の上に設けられた第２コンタクトプラグとを有し、前記第１ユニットの前記第１不純物領域は前記第１開口部を介して受光し、前記第２ユニットの前記第１不純物領域は第２遮光層で覆われていることを特徴とすることを特徴とする。 The second means for solving the above-mentioned problems is a photoelectric conversion device including a plurality of units, wherein the plurality of units include a first unit and a second unit, and each of the first unit and the second unit. Is an n-type first impurity region arranged in the semiconductor layer, an n-type second impurity region arranged in the semiconductor layer and to which charges are transferred from the first impurity region, and the first. The second impurity is located above the impurity region, surrounded by an insulator layer, and formed of a material different from the insulator layer, and between the insulator layer and the semiconductor layer. covering the region, and the first light-shielding layer having a first opening on said first impurity region, and the n-type third impurity region charge from said second impurity region is transmitted, and the second impurity region The gate electrode arranged between the third impurity region, the second opening, the first contact plug provided on the third impurity region arranged in the second opening, and the said. It has a second contact plug provided on the gate electrode arranged in the second opening, and the first impurity region of the first unit receives light through the first opening, and the said. The first impurity region of the second unit is characterized in that it is covered with a second light-shielding layer .
上記課題を解決するための第３の手段は、複数のユニットを備える光電変換装置であって、前記複数のユニットは第１ユニットおよび第２ユニットを含み、前記第１ユニットおよび前記第２ユニットのそれぞれは、半導体層の中に配された電荷生成領域と、前記電荷生成領域から転送された電荷を検出する電荷検出領域と、前記電荷生成領域の上に位置し、絶縁体層に囲まれた誘電体領域と、前記電荷生成領域と前記電荷検出領域との間に配されたゲート電極とを有し、前記ゲート電極と前記電荷検出領域は、前記光電変換装置の上面から見た平面視において共通の開口部の内部に形成されており、前記第１ユニットと前記第２ユニットとの間に位置する中間領域において、前記半導体層は、前記電荷生成領域の面積よりも大きい面積に渡って前記絶縁体層と前記半導体層との間に位置する第１遮光層で覆われており、前記中間領域および前記第２ユニットの前記電荷生成領域は、前記絶縁体層に対して前記半導体層の側とは反対側に位置する第２遮光層で覆われていることを特徴とする。 A third means for solving the above-mentioned problems is a photoelectric conversion device including a plurality of units, wherein the plurality of units include a first unit and a second unit, and the first unit and the second unit. Each is located above the charge generation region, a charge generation region for detecting the charge transferred from the charge generation region, and the charge generation region, and is surrounded by an insulator layer. It has a dielectric region and a gate electrode arranged between the charge generation region and the charge detection region, and the gate electrode and the charge detection region are viewed in a plan view from the upper surface of the photoelectric conversion device. In an intermediate region formed inside a common opening and located between the first unit and the second unit, the semiconductor layer covers an area larger than the area of the charge generation region. It is covered with a first light-shielding layer located between the insulator layer and the semiconductor layer, and the intermediate region and the charge generation region of the second unit are on the side of the semiconductor layer with respect to the insulator layer. It is characterized in that it is covered with a second light-shielding layer located on the opposite side of the above.
Claims (24)
複数のユニットは第１ユニットおよび第２ユニットを含み、
前記第１ユニットおよび前記第２ユニットのそれぞれは、
前記電荷生成領域から転送された電荷を保持する電荷保持領域と、
前記電荷生成領域の上に位置し、絶縁体層に囲まれ、前記絶縁体層とは異なる材料で形成された誘電体領域と、
前記絶縁体層と前記半導体層との間にて前記電荷保持領域を覆い、前記電荷生成領域の上に第１開口部を有する第１遮光層と、
電荷検出領域と、
前記電荷保持領域と前記電荷検出領域との間に配されたゲート電極と、
第２開口部と、
前記第２開口部に配された、前記電荷検出領域の上に設けられた第１コンタクトプラグと、
前記第２開口部に配された、前記ゲート電極の上に設けられた第２コンタクトプラグとを有し、
前記第１ユニットの前記電荷生成領域は前記第１開口部を介して受光し、
前記第２ユニットの前記電荷生成領域は第２遮光層で覆われていることを特徴とする光電変換装置。 A photoelectric conversion device including a plurality of units each having a charge generation region arranged in a semiconductor layer.
Multiple units include a first unit and a second unit
Each of the first unit and the second unit
A charge holding region that holds the charge transferred from the charge generation region and
A dielectric region located above the charge generation region, surrounded by an insulator layer, and formed of a material different from the insulator layer .
The covering said charge holding region in between the insulator layer and the semiconductor layer, a first light-shielding layer having a first opening on said charge generation region,
Charge detection area and
A gate electrode arranged between the charge holding region and the charge detection region,
With the second opening
A first contact plug provided on the charge detection region arranged in the second opening, and a first contact plug.
It has a second contact plug provided on the gate electrode arranged in the second opening .
The charge generation region of the first unit receives light through the first opening and receives light.
A photoelectric conversion device characterized in that the charge generation region of the second unit is covered with a second light-shielding layer.
前記第２ユニットにおいて、前記無機材料層が前記第２遮光層と前記誘電体領域との間に位置する、請求項１乃至６のいずれか１項に記載の光電変換装置。 In the first unit, the dielectric region is located between the inorganic material layer and the semiconductor layer.
The photoelectric conversion device according to any one of claims 1 to 6, wherein in the second unit, the inorganic material layer is located between the second light-shielding layer and the dielectric region.
前記第１ユニットおよび前記第２ユニットにおいて、前記第１遮光層は前記第１転送ゲートと前記第２転送ゲートを覆う、請求項１乃至９のいずれか１項に記載の光電変換装置。 The first unit and the second unit include a charge detection region that detects a charge transferred from the charge holding region, a first transfer gate that transfers a charge from the charge generation region to the charge holding region, and the charge. It has a second transfer gate that transfers charges from the holding region to the charge detection region, and an amplification transistor connected to the charge detection region.
The photoelectric conversion device according to any one of claims 1 to 9, wherein in the first unit and the second unit, the first light-shielding layer covers the first transfer gate and the second transfer gate.
前記第３ユニットは第３遮光層と第４遮光層を有し、
前記第３遮光層は開口を備え、
前記第４遮光層は、前記第３遮光層の開口を覆っており、
前記絶縁体層は、前記第３遮光層と前記第４遮光層との間に設けられており、
前記絶縁体層は、前記第３遮光層の開口の全体を覆う、請求項１乃至１０のいずれか１項に記載の光電変換装置。 Includes a third unit located between the first unit and the second unit.
The third unit has a third light-shielding layer and a fourth light-shielding layer .
The third light-shielding layer has an opening and
The fourth light-shielding layer covers the opening of the third light-shielding layer.
The insulator layer is provided between the third light-shielding layer and the fourth light-shielding layer.
The photoelectric conversion device according to any one of claims 1 to 10 , wherein the insulator layer covers the entire opening of the third light-shielding layer .
前記第４ユニットは第５遮光層を有し、
前記第５遮光層と前記半導体層との距離は、前記第２ユニットにおける前記第１遮光層と前記半導体層との距離よりも大きく、前記第２ユニットにおける前記第２遮光層と前記半導体層との距離よりも小さい、請求項１乃至１１のいずれか１項に記載の光電変換装置。 A fourth unit is provided between the first unit and the second unit.
The fourth unit has a fifth light-shielding layer.
The distance between the fifth light-shielding layer and the semiconductor layer is larger than the distance between the first light-shielding layer and the semiconductor layer in the second unit, and the second light-shielding layer and the semiconductor layer in the second unit The photoelectric conversion device according to any one of claims 1 to 11, which is smaller than the distance of.
または、
前記第２遮光層と前記第５遮光層は連続した遮光膜により形成されている、請求項１２に記載の光電変換装置。 The photoelectric conversion device according to claim 11, wherein the second light-shielding layer and the third light-shielding layer are formed of a continuous light-shielding film.
Or
The photoelectric conversion device according to claim 12, wherein the second light-shielding layer and the fifth light-shielding layer are formed of a continuous light-shielding film.
前記第５ユニットは、
前記第５ユニットの前記電荷生成領域から転送された電荷を保持する電荷保持領域と、
前記第５ユニットの前記電荷生成領域の上に位置し、前記絶縁体層に囲まれた誘電体領域と、
前記絶縁体層と前記半導体層との間にて前記第５ユニットの前記電荷保持領域を覆い、前記誘電体領域と前記半導体層との間にて前記電荷生成領域を覆う第６遮光層と、を有する、請求項１乃至１３のいずれか１項に記載の光電変換装置。 The plurality of units include a fifth unit.
The fifth unit is
A charge holding region that holds the charge transferred from the charge generation region of the fifth unit, and a charge holding region.
A dielectric region located above the charge generation region of the fifth unit and surrounded by the insulator layer,
A sixth light-shielding layer that covers the charge-holding region of the fifth unit between the insulator layer and the semiconductor layer and covers the charge-generating region between the dielectric region and the semiconductor layer. The photoelectric conversion device according to any one of claims 1 to 13.
前記第６ユニットは、
前記第６ユニットの前記電荷生成領域から転送された電荷を保持する電荷保持領域と、
前記絶縁体層と前記半導体層との間にて前記第６ユニットの前記電荷保持領域を覆い、前記第６ユニットの前記電荷生成領域の上に開口を有する第７遮光層と、を有し、
前記第６ユニットにおいて前記絶縁体層が前記第７遮光層の前記開口の全体を覆い、前記第６ユニットの前記電荷生成領域は前記開口を介して受光する、請求項１乃至１４のいずれか１項に記載の光電変換装置。 The plurality of units include a sixth unit.
The sixth unit is
A charge holding region that holds the charge transferred from the charge generation region of the sixth unit, and a charge holding region.
It has a seventh light-shielding layer that covers the charge-holding region of the sixth unit between the insulator layer and the semiconductor layer and has an opening above the charge-generating region of the sixth unit.
Any one of claims 1 to 14, wherein in the sixth unit, the insulator layer covers the entire opening of the seventh light-shielding layer, and the charge generation region of the sixth unit receives light through the opening. The photoelectric conversion device according to the section.
複数のユニットは第１ユニットおよび第２ユニットを含み、
前記第１ユニットおよび前記第２ユニットのそれぞれは、
半導体層の中に配されたｎ型の第１不純物領域と、
前記半導体層の中に配され、前記第１不純物領域から電荷が転送されるｎ型の第２不純物領域と、
前記第１不純物領域の上に位置し、絶縁体層に囲まれ、前記絶縁体層とは異なる材料で形成された誘電体領域と、
前記絶縁体層と前記半導体層との間にて前記第２不純物領域を覆い、前記第１不純物領域の上に第１開口部を有する第１遮光層と、
前記第２不純物領域から電荷が伝送されるｎ型の第３不純物領域と、
前記第２不純物領域と前記第３不純物領域との間に配されたゲート電極と、
第２開口部と、
前記第２開口部に配された、前記第３不純物領域の上に設けられた第１コンタクトプラグと、
前記第２開口部に配された、前記ゲート電極の上に設けられた第２コンタクトプラグと
を有し、
前記第１ユニットの前記第１不純物領域は前記第１開口部を介して受光し、
前記第２ユニットの前記第１不純物領域は第２遮光層で覆われていることを特徴とすることを特徴とする光電変換装置。 It is a photoelectric conversion device having multiple units.
Multiple units include a first unit and a second unit
Each of the first unit and the second unit
The n-type first impurity region arranged in the semiconductor layer and
An n-type second impurity region arranged in the semiconductor layer and to which charges are transferred from the first impurity region,
A dielectric region located above the first impurity region, surrounded by an insulator layer, and formed of a material different from that of the insulator layer .
And wherein the insulator layer covers the second impurity region at between the semiconductor layer, the first light-shielding layer having a first opening on said first impurity region,
An n-type third impurity region in which charges are transmitted from the second impurity region,
A gate electrode arranged between the second impurity region and the third impurity region,
With the second opening
A first contact plug provided on the third impurity region arranged in the second opening, and a first contact plug.
It has a second contact plug provided on the gate electrode arranged in the second opening .
The first impurity region of the first unit receives light through the first opening and receives light.
A photoelectric conversion device, characterized in that the first impurity region of the second unit is covered with a second light-shielding layer.
前記複数のユニットは第１ユニットおよび第２ユニットを含み、
前記第１ユニットおよび前記第２ユニットのそれぞれは、
半導体層の中に配された電荷生成領域と、
前記電荷生成領域から転送された電荷を検出する電荷検出領域と、
前記電荷生成領域の上に位置し、絶縁体層に囲まれた誘電体領域と、
前記電荷生成領域と前記電荷検出領域との間に配されたゲート電極とを有し、
前記ゲート電極と前記電荷検出領域は、前記光電変換装置の上面から見た平面視において共通の開口部の内部に形成されており、
前記第１ユニットと前記第２ユニットとの間に位置する中間領域において、前記半導体層は、前記電荷生成領域の面積よりも大きい面積に渡って前記絶縁体層と前記半導体層との間に位置する第１遮光層で覆われており、
前記中間領域および前記第２ユニットの前記電荷生成領域は、前記絶縁体層に対して前記半導体層の側とは反対側に位置する第２遮光層で覆われていることを特徴とする光電変換装置。 It is a photoelectric conversion device having multiple units.
The plurality of units include a first unit and a second unit.
Each of the first unit and the second unit
The charge generation region arranged in the semiconductor layer and
A charge detection region that detects the charge transferred from the charge generation region, and a charge detection region.
A dielectric region located above the charge generation region and surrounded by an insulator layer,
It has a gate electrode arranged between the charge generation region and the charge detection region .
The gate electrode and the charge detection region are formed inside a common opening in a plan view seen from the upper surface of the photoelectric conversion device.
In the intermediate region located between the first unit and the second unit, the semiconductor layer is located between the insulator layer and the semiconductor layer over an area larger than the area of the charge generation region. It is covered with the first light-shielding layer
The intermediate region and the charge generation region of the second unit are covered with a second light-shielding layer located on the side opposite to the semiconductor layer side with respect to the insulator layer. apparatus.
前記第１遮光層の主成分と前記第１配線層の主成分は互いに異なり、
前記第２遮光層の主成分と前記第２配線層の主成分は互いに異なる、請求項１乃至１８のいずれか１項に記載の光電変換装置。 The insulator layer is located between the first wiring layer and the second wiring layer,
The main components of the first light-shielding layer and the main components of the first wiring layer are different from each other.
The photoelectric conversion device according to any one of claims 1 to 18, wherein the main component of the second light-shielding layer and the main component of the second wiring layer are different from each other.
前記第１遮光層の主成分はタングステンであり、
前記第２遮光層の主成分はアルミニウムであり、
前記第１配線層および前記第２配線層の主成分は銅である、請求項１乃至１８のいずれか１項に記載の光電変換装置。 The insulator layer is located between the first wiring layer and the second wiring layer,
The main component of the first light-shielding layer is tungsten.
The main component of the second light-shielding layer is aluminum.
The photoelectric conversion device according to any one of claims 1 to 18, wherein the main components of the first wiring layer and the second wiring layer are copper.
前記絶縁体層が前記第１配線層と前記第２配線層の間に設けられていることを特徴とする請求項１乃至２１のいずれか１項に記載の光電変換装置。The photoelectric conversion device according to any one of claims 1 to 21, wherein the insulator layer is provided between the first wiring layer and the second wiring layer.
前記光電変換装置に結像する光学系、前記光電変換装置を制御する制御装置、前記光電変換装置から出力された信号を処理する処理装置、前記光電変換装置で得られた情報を表示する表示装置、および、前記光電変換装置で得られた情報を記憶する記憶装置の少なくともいずれかと、を備えることを特徴とするシステム。 The photoelectric conversion device according to any one of claims 1 to 23 ,
An optical system that forms an image on the photoelectric conversion device, a control device that controls the photoelectric conversion device, a processing device that processes a signal output from the photoelectric conversion device, and a display device that displays information obtained by the photoelectric conversion device. A system comprising, and at least one of a storage devices for storing information obtained by the photoelectric conversion device.
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| US15/792,607 US10763298B2 (en) | 2016-10-28 | 2017-10-24 | Photoelectric conversion apparatus and image pickup system |
| GB1717460.8A GB2558714B (en) | 2016-10-28 | 2017-10-24 | Photoelectric conversion apparatus and image pickup system |
| DE102017125227.4A DE102017125227B4 (en) | 2016-10-28 | 2017-10-27 | PHOTOELECTRIC CONVERSION DEVICE AND IMAGE CAPTURE SYSTEM |
| CN201711018487.6A CN108010927B (en) | 2016-10-28 | 2017-10-27 | Photoelectric conversion apparatus and image pickup system |
| US16/921,780 US11177314B2 (en) | 2016-10-28 | 2020-07-06 | Photoelectric conversion apparatus and image pickup system |
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