JP2018076566A - Thin film deposition apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a thin film deposition apparatus capable of continuously throwing a work piece to continuously perform various vacuum treatment, such as a surface treatment and thin film deposition and achieving the deposition of a thin film having high quality and high performance in a short time on the work piece.SOLUTION: A method for depositing a thin film using a thin film deposition apparatus comprising a main chamber 12 including a load lock space 16a, a first surface treatment space 16b, a sputtering space 16c, a second surface treatment space 16d; and work piece chambers 17a-17d for storing an object to be treated comprises; introducing or extracting a work piece in the load lock space 16a at a first position having each of the work piece chambers 17a-17d pressed to the lid member 14 of the main chamber 12; and independently performing vacuum treatment to the work piece in each of the spaces 16b-16d.SELECTED DRAWING: Figure 5

Description

  The present invention relates to a thin film forming apparatus that continuously inputs various kinds of vacuum processing such as surface treatment and thin film formation by continuously feeding workpieces having various shapes such as plastic molded products.

  For example, injection molded plastic molded products (work) are used as reflectors and instruments for automobile headlamps. For these workpieces, a metal thin film is formed by sputtering using a metal such as chromium (Cr) or aluminum (Al) for the purpose of providing a mirror finish or a metallic texture. After the thin film is formed by sputtering, the metal film is transported to another thin film forming apparatus to prevent oxidation of the metal film and protect the surface from scratches, and a monomer such as hexamethyldisiloxane (HMDSO) in the chamber of the apparatus. A silicon oxide protective film or the like is formed by plasma CVD using a gas.

Film formation on such a workpiece is preferably performed in a manner linked with a workpiece production cycle by an injection molding machine. However, in the conventional thin film production apparatus, when the pressure in the chamber before the start of film formation is not reduced to a high vacuum pressure of about 10 ⁻³ Pa, the reflectance of the surface of the workpiece after sputtering decreases, It is known that a phenomenon called strange occurs. These problems are mainly due to the influence of oxygen or moisture in the chamber, and there has been a problem that it takes a long time to reduce the pressure in order to remove them.

  In order to solve this problem, there has been proposed an apparatus that executes thin film formation by sputtering and protective film formation by plasma CVD in the same chamber (for example, see Patent Documents 1 and 2). Since these devices perform film formation by sputtering with the minimum degree of vacuum required, the time required for evacuation is short, sputtering can be started quickly, high-speed film formation is possible, and a short tact time is achieved. It is possible to form a metal thin film with high quality and high reflectance. However, since these apparatuses perform the thin film formation by sputtering and the formation of the protective film by plasma CVD in the same chamber, there is a limit to increasing the film formation speed.

  Therefore, the two work chambers each having the first opening and the second opening are sequentially transferred between the load lock space and the sputtering processing space, and the workpiece (work) is taken in and out through the first opening. There has been proposed a vacuum processing apparatus capable of performing vacuum break and evacuation appropriately through the second opening (see, for example, Patent Document 3). With such a vacuum processing apparatus, work introduction and removal and film formation can be performed in different work chambers of the same apparatus, so that the time required for evacuation can be further shortened and the film formation time can be shortened. Is possible.

Japanese Patent Application Laid-Open No. 2015-113513 JP 2004-288878 A Japanese Patent No. 4702867

  However, in the vacuum processing apparatus described in Patent Document 3, the workpiece chamber into which the workpiece is introduced is transferred to the vacuum processing space by the transfer mechanism when the workpiece (workpiece) is vacuum-processed, and the first opening and the second The vacuum process is performed with at least one of the openings opened in the main chamber. Accordingly, if different vacuum processes are simultaneously performed in three or more work chambers, the quality and performance of the thin film are deteriorated, so that three or more work chambers cannot be applied to the vacuum processing apparatus of Patent Document 3. Further, in the vacuum processing apparatus described in Patent Document 3, when removing a holding member that holds a work in the work chamber, it is necessary to open the main chamber to the atmosphere, and time is required for evacuation.

  The present invention has been made in view of the above circumstances, and continuously performs various vacuum treatments such as surface treatment and thin film formation by continuously feeding workpieces having various shapes such as plastic molded products. An object of the present invention is to provide a thin film forming apparatus capable of forming a high quality and high performance thin film on a workpiece in a short time.

  In order to achieve the above object, the first aspect of the present invention is the rotationally symmetric position of four spaces including a load lock space, a first surface treatment space, a sputtering treatment space, and a second surface treatment space. A main chamber, four work chambers that are accommodated in the main chamber and are disposed in any one of the four spaces, and that are open in the vertical direction, hold the four work chambers, and A conveying means for simultaneously rotating the chamber to convey from one of the four spaces to any other, an exhaust means for exhausting the inside of the main chamber, and the four work chambers are different in the vertical direction. A moving means for moving to a position and a second position; and a lid member for sealing an upper opening of the main chamber, wherein the four work chambers When moved to the first position, the upper opening of any of the work chambers arranged in the load lock space can be opened, and a lid member for sealing the upper openings of the other three work chambers; When the four work chambers are moved to the first position, individual exhaust means for exhausting each of the three work chambers arranged in three processing spaces other than the load lock space, and the load lock space Processing means for performing individual processing on a workpiece in three processing spaces other than the above, and in the first position, the workpiece is introduced or removed in the load lock space, and the load lock is provided. Individual processing is performed on the object to be processed in three processing spaces other than the space, and at the second position, The thin film is transported by the transport means in a state in which the upper opening of any work chamber is opened in the main chamber, and the lower opening of any work chamber is separated from the individual exhaust means. In the forming device.

  According to a second aspect of the present invention, in the first surface treatment space, first surface treatment means for pretreating the treatment object using high-frequency plasma, and in the sputtering treatment space, the treatment object Sputter processing means for forming a uniform metal thin film by performing sputtering treatment on the substrate, and second surface treatment means for performing post-treatment on the workpiece using high-frequency plasma in the second surface treatment space The thin film forming apparatus according to the first aspect is provided.

  According to a third aspect of the present invention, there is provided the thin film forming apparatus according to the second aspect, wherein the post-treatment is plasma polymerization or chemical vapor deposition.

  According to a fourth aspect of the present invention, in the sputtering processing means, the film forming material for the metal thin film is a target material containing aluminum, chromium, tin, indium, or an alloy thereof. The thin film forming apparatus according to the aspect or the third aspect.

  A fifth aspect of the present invention is the thin film forming apparatus according to the fourth aspect, wherein the target material is formed by bonding a copper base plate, an aluminum target, and an embossed copper plate. .

  According to a sixth aspect of the present invention, there is provided a holding member that is detachably provided in each of the four work chambers and holds the workpiece in a predetermined posture, and the holding member is rotated in the work chamber. The thin film forming apparatus according to any one of the first to fifth aspects, further comprising: changing means for changing the workpiece to a predetermined posture.

  According to a seventh aspect of the present invention, there is provided a control means for controlling the driving speed of the sputtering processing magnet in conjunction with a change in the posture of the workpiece by the changing means in a work chamber arranged in the sputtering processing space. The thin film forming apparatus according to the sixth aspect is characterized by comprising:

  According to the present invention, workpieces having various shapes such as plastic molded products can be continuously added to perform various vacuum treatments such as surface treatment and thin film formation, It is possible to provide a thin film forming apparatus capable of realizing quality and high performance thin film formation in a short time.

FIG. 6 is a cross-sectional view taken along line AA ′ in FIG. 5. FIG. 6 is a cross-sectional view taken along line AA ′ in FIG. 5. FIG. 6 is a cross-sectional view taken along line BB ′ in FIG. 5. FIG. 6 is a cross-sectional view taken along line BB ′ in FIG. 5. It is the top view which showed notionally the positional relationship of the main chamber and each work chamber in the thin film forming apparatus of this embodiment. FIG. 6 is a partial cross-sectional view taken along the line AA ′ conceptually showing a part of the cross section in the direction of the line AA ′ shown in FIG. 5. FIG. 6 is a cross-sectional view taken along the line CC ′ conceptually showing a cross section in the direction of the line CC ′ shown in FIG. 5. It is the figure which showed notionally the state which rotationally driven the workpiece | work hold | maintained at the holding member shown in FIG. (A) is the figure which showed notionally the state which performed the vacuum process to the workpiece | work hold | maintained at the holding member shown in FIG. 8, (b) rotated the workpiece | work of (a) to the arrow D2 direction of FIG. (C) is the figure which rotated the workpiece | work of (a) to the arrow D3 direction of FIG.

  The present invention will be described in detail based on the following embodiments. The following description shows one embodiment of the present invention, and the present invention can be arbitrarily changed without departing from the gist thereof.

(Embodiment 1)
(Thin film forming equipment)
1 is a cross-sectional view taken along line AA ′ of FIG. 5 in a state in which each work chamber is brought into contact with the lid member of the main chamber and the work chamber in the load lock space is opened to the outside in the thin film forming apparatus according to the embodiment of the present invention. 2 is a cross-sectional view taken along the line AA ′ of FIG. 5 in a state in which the apparatus is sealed and each work chamber is opened in the main chamber. FIG. 3 shows a lid member of the main chamber in the apparatus. 5 is a cross-sectional view taken along the line BB ′ of FIG. 5 in a state where each work chamber is in contact, and FIG. 4 is a view taken along the line BB ′ of FIG. 5 in a state where the apparatus is sealed and each work chamber is opened in the main chamber. It is line sectional drawing.

  As shown in FIGS. 1 to 4, the thin film forming apparatus 1 of this embodiment includes a gantry 10, a high vacuum exhaust pump 11, and a main chamber 12 that is provided on the gantry 10 and is evacuated by the high vacuum exhaust pump 11. And four workpieces arranged in any of the load lock space 16a, the first surface treatment space 16b, the sputter treatment space 16c, and the second surface treatment space 16d provided at rotationally symmetric positions in the main chamber 12, respectively. The chambers 17a to 17d, the transport mechanism 19 for transporting the work chambers 17a to 17d via the transport table 18, and the work chambers 17a to 17d having a first position (described later) and a first position different from each other in the vertical direction. 2, moving mechanisms 41 a to 41 d, 42 a, 42 b, 42 d that move to a position (described later), and the main chamber 12 A lid member 14 that seals the upper opening 13, high vacuum pumps 31 and 32 that evacuate the work chambers 17a to 17d independently, a first surface treatment space 16b, and a second surface treatment space 16d. The high-frequency electrodes 48 and 49 used for the surface treatment and the film-forming sputtering source 50 used for the sputtering treatment in the sputtering treatment space 16c are provided. The thin film forming apparatus 1 also has an opening / closing mechanism 15 that moves the lid member 14 in the vertical direction. The lid member 14 is moved in the vertical direction by the opening / closing mechanism 15 to open the upper opening 13 of the main chamber 12. And can be sealed.

  FIG. 5 is a plan view conceptually showing the positional relationship between the main chamber and each work chamber in the thin film forming apparatus of this embodiment. As shown in FIG. 5, in the main chamber 12, a load lock space 16a, a first surface treatment space 16b, a sputter treatment space 16c, and a second surface treatment space 16d are rotated every 90 °. It is provided at a symmetrical position. Four work chambers 17a to 17d are accommodated in the main chamber 12, and are arranged in any of the spaces 16a to 16d.

  As shown in FIGS. 1 to 4, the details will be described later. With such a configuration, the thin film forming apparatus 1 allows the four work chambers 17 a to 17 d to be in the first position (see FIGS. 1 and 3). In the load lock space 16a, an object to be processed (hereinafter referred to as “work W”, see FIG. 6) can be introduced or removed, and the first surface treatment space 16b, the sputtering treatment space 16c, and the second treatment space A predetermined vacuum treatment can be performed on the workpiece W in the surface treatment space 16d. In this case, the four work chambers 17a to 17d are separated from the main chamber 12 and function as independent chambers. When each of the work chambers 17a to 17d is in the second position (see FIGS. 2 and 4), the upper openings 20a to 20d are opened in the main chamber 12, and the lower openings 30a to 30d are made high. In a state of being separated from the vacuum pumps 31 and 32, it can be transported to the spaces 16 a to 16 d by the transport mechanism 19. That is, the transfer mechanism 19 functions as a transfer unit for each of the work chambers 17a to 17d.

  As shown in FIGS. 1 and 2, the main chamber 12 is provided with an upper opening 13 that communicates with the outside over the entire area of the upper surface thereof, and is formed at the periphery of the bottom surface of the main chamber 12 on the opening / closing mechanism 15 side. Is provided with a lower opening 55c communicating with the outside. A high vacuum exhaust pump 11 that evacuates the entire main chamber 12 is provided on the bottom 10 side of the main chamber 12. The high vacuum pump 11 is connected to the lower opening 55c via the exhaust pipe 57, and with this configuration, the inside of the main chamber 12 can be evacuated.

  As shown in FIGS. 1 to 4, the four work chambers 17 a to 17 d are provided with upper openings 20 a to 20 d communicating with the outside over the entire area of the upper surface thereof. On the other hand, lower openings 30a to 30d communicating with the outside are provided at positions corresponding to any of the spaces 16a to 16d on the bottom surfaces of the work chambers 17a to 17d.

  A transport mechanism 19, which is a rotation mechanism, is provided around the center of the main chamber 12, and a transport table 18 is provided on the rotation shaft of the transport mechanism 19. The transfer table 18 is provided with four openings 54a to 54d, and work chambers 17a to 17d are placed on the peripheral portions of the openings 54a to 54d. The lower openings 30a to 30d of the work chambers 17a to 17d have a smaller diameter than the openings 54a to 54d of the transfer table 18, and the peripheral edges of the lower openings 30a to 30d are exposed in the openings 54a to 54d. Although details will be described later, the moving mechanisms 41a to 41d, 42a, 42b, and 42d come into contact with the exposed portions of the peripheral edges of the lower openings 30a to 30d, and the work chambers 17a to 17d are different in the vertical direction. It is possible to move between the position and the second position.

  The thin film forming apparatus 1 can be arranged in any of the spaces 16 a to 16 d by the transport mechanism 19 in a state where the work chambers 17 a to 17 d are placed on the transport table 18. Specifically, as shown in FIG. 5, each of the work chambers 17 a to 17 d placed on the transfer table 18 is rotated by 90 ° in the direction of the arrow D <b> 1 by the transfer mechanism 19, and any one of the spaces 16 a to 16 d. By transferring to 16d, the work chambers 17a to 17d can be rearranged simultaneously.

  As shown in FIGS. 1 to 4, the bottom surface of the main chamber 12 is provided with moving means for moving the four work chambers 17 a to 17 d to the first position and the second position that are different in the vertical direction. . Such moving means is a so-called lift that comes into contact with the exposed portions of the peripheral edges of the lower openings 30a to 30d of the respective work chambers 17a to 17d placed on the transfer table 18 and raises or lowers them. Specifically, the lift is provided with moving mechanisms 41a to 41d, 42a, 42b, and 42d provided on the bottom surface of the main chamber 12 so as to be able to come into contact with predetermined positions on the peripheral edges of the bottom surfaces of the work chambers 17a to 17d. It is. One moving mechanism 41c can move the work chamber 17c in the vertical direction.

  The moving mechanisms 41a, 41b, 41d, 42a, 42b, and 42d have telescopic portions 43a, 43b, 43d, 44a, 44b, and 44d that are telescopically provided on the other ends in the vertical direction. Abutting plates 40a, 40b, and 40d that abut against the bottom surfaces of the work chambers 17a, 17b, and 17d are provided on the other ends of the telescopic portions 43a, 43b, 43d, 44a, 44b, and 44d. The contact plates 40a, 40b, and 40d have a width that is smaller than the diameter of the openings 54a, 54b, and 54d of the transport table 18, and can pass through the openings 54a, 54b, and 54d. Then, by lifting the work chambers 17a, 17b, 17d by the moving mechanisms 41a, 41b, 41d, 42a, 42b, 42d, the lower openings of the work chambers 17a, 17b, 17d are passed through the openings 54a, 54b, 54d. It can contact | abut to the exposed part of the peripheral part of 30a, 30b, 30d (refer FIG.1 and FIG.3). With this configuration, the contact plates 40a, 40b, and 40d are interlocked with the vertical movements of the moving mechanisms 41a, 41b, 41d, 42a, 42b, and 42d, and the expansion / contraction portions 43a, 43b, 43d, 44a, 44b, and 44d. Can move up and down.

  When the moving mechanisms 41a, 41b, 41d, 42a, 42b, and 42d are driven, the contact plates 40a, 40b, and 40d are raised in conjunction with the telescopic portions 43a, 43b, 43d, 44a, 44b, and 44d, and these are transport tables. 18 through the openings 54a, 54b, 54d of 18 and abut the exposed portions of the peripheral portions of the lower openings 30a, 30b, 30d of the work chambers 17a, 17b, 17d on the transfer table 18. Then, the contact plates 40a, 40b, and 40d lift the work chambers 17a, 17b, and 17d and come into pressure contact with the lid member 14 of the main chamber 12. The positions of the work chambers 17a, 17b, and 17d in the main chamber 12 at this time are the first positions (see FIGS. 1 and 3). On the other hand, it is also possible to drive the moving mechanisms 41a, 41b, 41d, 42a, 42b, 42d to lower the work chambers 17a, 17b, 17d onto the transfer table 18. The positions of the work chambers 17a, 17b, and 17d in the main chamber 12 at this time are the second positions (see FIGS. 2 and 4).

  As shown in FIG. 1 and FIG. 2, the moving mechanism 41c has a configuration having an expansion / contraction part 43c, and the movement mechanism 41a, 41b, 41d, 42a, 42b, 42d has the expansion / contraction part 43a, 43b, 43d, 44a, 44b, 44d. The adjustment plate 46 is provided with an adjustment plate 46 that does not have a through-hole provided on the expansion / contraction portion 43c, and a contact member 47 provided on the adjustment plate 46. A frame-shaped contact member 47 surrounding the lower opening 30c is provided on the surface on the chamber 17c side. The contact member 47 on the adjustment plate 46 has a width smaller than the diameter of the opening 54c of the transport table 18, and can pass through the opening 54c. Then, the work chamber 17c can be lifted by the moving mechanism 41c through the opening 54c and in contact with the exposed portion of the peripheral edge of the lower opening 30c of the work chamber 17c. With this configuration, the moving mechanism 41 c lifts the work chamber 17 c and presses against the lid member 14 to the first position (see FIG. 1) in the same manner as the moving mechanism 41 a and the like, and places the work chamber 17 c on the transfer table 18. To the second position (see FIG. 2).

  As shown in FIGS. 1 to 4, the lid member 14 has substantially the same shape as the upper openings 20 a to 20 d of the work chambers 17 a to 17 d at positions corresponding to any of the spaces 16 a to 16 d, Openings 56a to 56d communicating with each other are provided. The lid member 14 has open / close lids 21a to 21d for sealing the upper openings 20a to 20d and the openings 56a to 56d, and positions corresponding to the spaces 16a to 16d on the lid member 14. Are arranged respectively. Thus, the upper openings 20a to 20d and the openings 56a to 56d can be sealed. The open / close lids 21a to 21d can be moved in the vertical direction by driving means (not shown) to open and seal the upper openings 20a to 20d.

  In the thin film forming apparatus 1, the upper openings 13 and 20a to 20d of the main chamber 12 are sealed by the lid member 14 and the opening and closing lids 21a to 21d, and the work chambers 17a to 17d are moved to the first position described above. By connecting the high vacuum pumps 31, 32, the work chambers 17a, 17b, 17d can be evacuated independently. Although details will be described later, the work chamber 17 c is evacuated by the high vacuum pump 11.

  As shown in FIGS. 1 and 2, the high vacuum exhaust pump 31 is provided at a position corresponding to the load lock space 16a on the bottom surface of the main chamber 12 on the mount 10 side, and the exhaust pipe 34 and the bellows exhaust pipe 33a. Is connected to the lower opening 30a. With this configuration, the high vacuum exhaust pump 31 can exhaust the inside of each of the work chambers 17a to 17d transferred to the load lock space 16a. That is, the high vacuum exhaust pump 31 functions as an individual exhaust unit for the work chambers 17a to 17d in the load lock space 16a. On the other hand, as shown in FIGS. 3 and 4, the high vacuum exhaust pump 32 is provided at a position corresponding to the first surface treatment space 16 b on the bottom surface of the main chamber 12 on the mount 10 side, and the exhaust pipe 35. , 36 and the bellows exhaust pipes 33b, 33d are connected to the lower openings 30b, 30d. The exhaust pipe 36 is connected to the exhaust pipe 35 and is connected to the high vacuum exhaust pump 32. The high vacuum exhaust pump 32 is used to evacuate the inside of each of the work chambers 17b and 17d transferred to the first surface treatment space 16b and the second surface treatment space 16d. That is, the high vacuum exhaust pump 32 functions as an individual exhaust means for the work chambers 17b and 17d in the first surface treatment space 16b and the second surface treatment space 16d.

  As shown in FIGS. 1 to 4, lower openings 55a, 55b, and 55d communicating with the outside are provided at positions corresponding to the spaces 16a, 16b, and 16d on the bottom surface of the main chamber 12, respectively. In the lower openings 55a, 55b, and 55d, contact plates 38a, 38b, and 38d having through-holes 37a, 37b, and 37d provided so as to penetrate in the thickness direction are fixed at substantially the upper center of the lower openings 55a, 55b, and 55d. The bellows exhaust pipes 33a, 33b, 33d are connected so as to close the holes 37a, 37b, 37d. Abutting plates 40a, 40b, and 40d having through holes 39a, 39b, and 39d that are provided through substantially the center in the thickness direction are fixed to the end portions of the bellows exhaust pipes 33a, 33b, and 33d. When the contact plates 40a, 40b, 40d are lifted in the direction of the lid member 14 by the moving mechanisms 41a, 41b, 41d, 42a, 42b, 42d, the bellows exhaust pipes 33a, 33b, 33d expand and contract in conjunction with them. . When the contact plates 40a, 40b, and 40d are brought into contact with the bottom surfaces of the work chambers 17a, 17b, and 17d, the lower openings 30a, 30b, and 30d and the through holes 39a of the contact plates 40a, 40b, and 40d are provided. , 39b, 39d, the through holes 37a, 37b, 37d of the contact plates 38a, 38b, 38d and the lower openings 55a, 55b, 55d of the main chamber 12 communicate with each other.

  When the end portions of the exhaust pipes 34 to 36 are connected to the lower openings 55a, 55b, and 55d, they are connected to the high vacuum exhaust pumps 31 and 32 through gate valves (not shown), and each work chamber 17a. The interior of any of ˜17d can be evacuated. Moreover, since the vacuum break valves 45a, 45b, and 45d are also connected in parallel to the exhaust pipes 34 to 36, the vacuum inside any one of the work chambers 17a to 17d can be broken.

  As shown in FIGS. 1 and 2, a lower opening 55c communicating with the outside is provided on the bottom surface of the main chamber 12, and an exhaust pipe 57 is connected to the lower opening 55c, whereby a high vacuum exhaust pump is provided. 11 can independently evacuate the inside of each of the work chambers 17a to 17d disposed in the sputtering processing space 16c. That is, the high vacuum evacuation pump 11 serves as an evacuation unit for the main chamber 12 and an evacuation unit for any one of the work chambers 17a to 17d disposed in the sputtering processing space 16c. And it functions as an individual exhaust means of each work chamber 17a-17d in the sputter processing space 16c.

  As shown in FIGS. 2 and 4, in the thin film forming apparatus 1, when the work chambers 17 a to 17 d are placed on the transfer table 18 and moved to the second position, the upper openings 20 a to 20 d have the main chambers. The high vacuum exhaust pumps 31 and 32 are separated from the 12 lid members 14 and the lower openings 30a to 30d. In this state, each of the work chambers 17a to 17d is opened in the main chamber 12, so that it is evacuated together with the main chamber 12 by the above-described high vacuum evacuation pump 11 without being evacuated independently.

  As shown in FIGS. 1 to 4, in the first surface treatment space 16 b and the second surface treatment space 16 d, surface treatment is performed using the high frequency electrodes 48, 49, except that both have different high frequency output values. Since the processing is the same, even if the exhaust processing is performed using the common high vacuum exhaust pump 32, the processing accuracy is not affected. Since the inside of the two work chambers 17b and 17d can be evacuated by one high vacuum evacuation pump 32, the apparatus can be made compact. The high vacuum exhaust pump 11 is configured to evacuate the main chamber 12 and to independently evacuate any of the work chambers 17a to 17d in the sputtering processing space 16c. On the other hand, the high vacuum pump 32 is configured to perform vacuum pumping of the work chambers 17b and 17d independently, but is not limited to this configuration. For example, an arbitrary exhaust means may be provided so that the main chamber 12 and the work chambers 17a to 17d can be evacuated independently.

  When the work W is introduced or removed in the load lock space 16a and vacuum processing is performed independently in the other spaces 16b to 16d, the work chambers 17a to 17d are moved to the first position. Do it. Individual vacuum processing in each of the spaces 16b to 16d is performed using the following processing means.

  Processing means for performing vacuum processing independently on the workpiece W is provided at a position on the main chamber 12 corresponding to any one of the spaces 16b to 16d. Such a processing means is a first surface processing means for pre-treating the surface of the workpiece W using high-frequency plasma in the first surface processing space 16b, and the surface of the workpiece W is sputtered in the sputtering processing space 16c. In the second surface treatment space 16d, the second surface treatment means performs post-treatment on the surface of the workpiece W using high-frequency plasma. The first surface treatment means and the second surface treatment means include at least high-frequency electrodes 48 and 49 provided on the lower surfaces of the open / close lids 21b and 21d. Further, the sputtering processing means moves the film forming sputtering source 50 provided on the lower surface of the open / close lid 21c, the film forming magnet 51 provided on the upper surface of the open / close lid 21c, and the film forming magnet 51 in the direction of arrow E. A magnet drive mechanism 52 that can be moved to a position and a control unit 53 that controls the drive of the magnet drive mechanism 52 are included. By these processing means, each surface treatment can be performed on the workpiece W in each of the spaces 16b to 16d, or a uniform metal thin film can be formed by performing a sputtering treatment on the workpiece W. The pre-processing and post-processing will be described later.

  Further, when the posture of the workpiece W is changed in each of the spaces 16b to 16d other than the load lock space 16a, the workpiece chambers 17b and 17d are moved to the second position. The work for changing the posture of the workpiece W in each of the spaces 16b to 16d is performed using the following changing means.

  6 is a partial cross-sectional view taken along the line AA ′ of FIG. 5 in a state in which the work is introduced into the work chamber through the holding member in the thin film forming apparatus of the present embodiment, and FIG. FIG. 6 is a cross-sectional view taken along the line CC ′ of FIG. 5 in a state in which a workpiece is introduced via a holding member. As shown in FIGS. 6 and 7, holding members 22 a to 22 d for introducing a workpiece W (described later) to be processed and holding a posture corresponding to the processing inside the work chambers 17 a to 17 d. Are detachably provided. The holding members 22a to 22d have any shape and are not particularly limited as long as the workpiece W can be held, and can be appropriately selected according to the shape of the workpiece W, processing conditions, and the like. Further, any material can be selected as appropriate, and for example, a metal such as stainless steel can be applied. In the present embodiment, the holding members 22a to 22d are formed in a so-called U shape by bending both ends of the thin metal plate, and through holes 221a to 221d are formed through the substantial center in the thickness direction. This is a member that allows the workpiece W to be fitted and fixed in the holes 221a to 221d. Further, both ends of the holding members 22a to 22d are engaged convex portions 25a to 25d and 26a to 26d that can be engaged with engaging concave portions 23a to 23d and 24a to 24d provided in the inner walls of the work chambers 17a to 17d. Are fixed with screws to the work chambers 17a to 17d. In the present embodiment, a leaf spring (not shown) is joined to the bottom surfaces of the engagement recesses 23a to 23d and 24a to 24d (inner wall sides of the work chambers 17a to 17d), and the engagement protrusions 25a to 25d and 26a. Each of the holding members 22a to 22d can be attached to each of the work chambers 17a to 17d by one-touch by pushing in the inner walls of the respective work chambers 17a to 17d and engaging them. Moreover, each holding member 22a-22d can be removed by one-touch by pushing in the engagement convex parts 25a-25d and 26a-26d again.

  In the present embodiment, the above-described members are used as the holding members 22a to 22d. However, the holding member 22a to 22d is not limited as long as the posture of the workpiece W can be held according to the processing. For example, the workpiece W can be placed and a through hole is provided. It may be a metal plate that is not provided, a set of metal rods that hold and hold the workpiece W, or a cage-like member on which the workpiece W is placed. Further, if the holding members 22a to 22d can be freely attached to and detached from the work chambers 17a to 17d, the structures of the engaging concave portions 23a to 23d and 24a to 24d and the engaging convex portions 25a to 25d and 26a to 26d are as follows. It is not limited to the above. According to these structures, when the workpiece W is taken out from each of the work chambers 17a to 17d in the load lock space 16a, the vacuum in each of the work chambers 17a to 17d is broken to open the opening / closing lid 21a, and each holding member 22a to 22d. It is possible to easily recover the workpiece W after the removal (see FIG. 1 and the like). For example, in a conventional thin film forming apparatus in which the holding member is screwed into the work chamber, the screw is removed and held only after breaking the vacuum inside the main chamber and opening the lid member in addition to the work chamber. The member and the workpiece after processing cannot be taken out. In such a case, when processing a new workpiece, it takes time to evacuate the main chamber, so that the work efficiency is reduced and the cost is increased.

  The workpiece W has various shapes such as an injection-molded plastic molded product used for, for example, a reflector of a headlamp of an automobile or an instrument. In this embodiment, when performing each vacuum processing on the workpiece W, the workpiece W is placed on the holding members 22a to 22d, and the workpiece W is held in a posture capable of performing each vacuum processing in a necessary region. did.

  As shown in FIGS. 1 to 4, at the center of the transfer table 18, a rotation driving mechanism 27 that changes the workpiece W into a predetermined posture by rotating the holding members 22 a to 22 d in the work chambers 17 a to 17 d. Is arranged. In the rotation drive mechanism 27, the work chambers 17a to 17d are in the second position where the work chambers 17a to 17d are placed on the transfer table 18 (see FIGS. 2 and 4), and the rotary shaft members 28b to 28d are the outer walls of the work chambers 17b to 17d. When connected to the holding members 22b to 22d via the connection members 29b to 29d provided on the (rotational drive mechanism 27 side), the rotary shaft members 28b to 28d can be rotationally driven. In addition, in the load lock space 16a, since it is not necessary to rotate only by introduce | transducing and taking out the workpiece | work W, the rotating shaft member is not provided. However, when any of the work chambers 17a to 17d arranged in the load lock space 16a is arranged in the other spaces 16b to 16d and performs each vacuum processing, the work W is rotated and changed to a predetermined posture. There is a need. For this reason, connection members 29a to 29d are provided on the outer walls (on the side of the rotational drive mechanism 27) of all the work chambers 17a to 17d.

  FIG. 8 is a diagram conceptually showing a state in which the work fixed to the holding member shown in FIG. 7 is rotationally driven. As shown in FIG. 8, when the rotary shaft members 28b to 28d are rotationally driven by the rotational drive mechanism 27, the holding members 22b to 22d are also rotated in the direction of the arrow D2 or D3 in conjunction with the rotational shaft members 28b to 28d. The work W fixed to the holding members 22b to 22d in the chambers 17b to 17d also rotates. Thereby, the workpiece | work W can be changed into the attitude | position which can perform each vacuum process to the predetermined | prescribed attitude | position, ie, the area | region which needs a vacuum process.

  9A is a diagram conceptually showing a state where the workpiece fixed to the holding member shown in FIG. 8 is subjected to vacuum processing, and FIG. 9B is a diagram showing the workpiece of FIG. 9A in the direction of arrow D2 in FIG. FIG. 8C is a diagram conceptually showing a state where the vacuum processing is performed by rotating the workpiece in FIG. 8, and FIG. 8C conceptually shows a state where the vacuum processing is performed by rotating the workpiece of FIG. 8A in the direction of arrow D3 in FIG. FIG. As shown in FIG. 9A, when the vacuum processing is performed without rotating the holding members 22b to 22d, the processing is performed on the region S1 on the bottom surface of the workpiece W below the holding members 22b to 22d. A predetermined surface treatment layer or thin film F1 is formed. Further, as shown in FIGS. 9B and 9C, when vacuum processing is performed by rotationally driving each in the direction of the arrow D2 or D3, the regions S2 and S3 on any wall surface of the workpiece W are Predetermined surface treatment layers (or thin films) F2 and F3 are formed, respectively.

  As shown in FIGS. 1 to 4, in this embodiment, as the high vacuum pumps 11, 31, and 32, a rotary pump (RP) and a turbo molecular pump (TMP) or a mechanical booster pump (MBP) are combined. Although used, it is not limited to these combinations as long as the degree of vacuum required for various vacuum processes can be maintained. For example, in addition to these pumps, a high vacuum exhaust pump such as an oil diffusion pump or a cryopump may be used. Moreover, in this embodiment, according to each vacuum processing, each said pump may be used independently and may be used combining multiple each pump.

  In the present embodiment, a seal mechanism (not shown) such as an O-ring is provided around the upper openings 20a to 20d of the work chambers 17a to 17d, and the work chambers 17a to 17d are brought into contact with the lid member 14. In the first position (see FIGS. 1 and 3), the internal airtightness was maintained by these sealing mechanisms. However, the sealing mechanism is not necessarily provided on the work chambers 17a to 17d side, and may be provided on the lid member 14 side of the main chamber 12, for example. When any of the work chambers 17a to 17d is heated at a high temperature during the vacuum processing, the sealing mechanism may be deteriorated. Therefore, it is desirable to provide the sealing mechanism on the main chamber 12 side.

  In the thin film forming apparatus 1, the vertical stroke of each work chamber 17 a to 17 d required in the main chamber 12 is a sealing mechanism (not shown) such as an O-ring between each work chamber 17 a to 17 d and the main chamber 12. As long as the width of the seal mechanism is not damaged, the stroke may be 5 mm to 10 mm. In this embodiment, the stroke is 5 mm. As a result, the size of the main chamber 12 can be minimized. Therefore, the size of the thin film forming apparatus 1 can be kept compact, and the apparatus cost, installation cost, and running cost can be greatly improved.

  In this embodiment, the control unit 53 controls the movement of the magnet driving mechanism 52 to change the position and moving speed of the film forming magnet 51 in accordance with the shape of the workpiece W, thereby making the film thickness uniform. Held. Note that the position and movement speed of the film forming magnet 51 are changed by the control unit 53 in accordance with the change in the posture of the work W by the rotation drive mechanism 27 described above, and even if the work W has a complicated shape, the thin film The film may be formed while maintaining the uniformity.

  For example, in the case where the thin film F1 is formed by performing the film forming process (sputtering process) on the region S1 of the work W in the sputtering process space 16c (see FIG. 9A), the film forming sputter source 50 and the work W are formed. Since the distance to the region S1 (so-called T-S distance) is longer than the other regions S2 and S3 (see FIGS. 9B and 9C), the distance from the thin films F2 and F3 is larger. The film thickness of the thin film F1 tends to be thinner. Therefore, in the present embodiment, the density of the plasma generated on the region S1 of the workpiece W is increased by lowering the moving speed of the film forming magnet 51 by the control unit 53, and the film with the other regions S2 and S3 is increased. The difference in thickness can be reduced. On the other hand, when the thin films F2 and F3 are formed by performing the film forming process (sputtering process) on the regions S2 and S3 including the wall surface of the work W, the work W is inclined at a predetermined angle by the rotation drive mechanism 27. The density of the plasma generated on the regions S2 and S3 of the work W is adjusted by changing the moving speed of the film forming magnet 51 by the control unit 53 according to the shape of the work W. Thereby, the film thickness of the thin films F2 and F3 can be controlled in accordance with the shape of the workpiece W to maintain uniformity.

  As described above, in the present embodiment, as a pretreatment in the first surface treatment space 16b, unnecessary surfaces on the surface of the workpiece W are removed and roughened, and the sputtering treatment is performed in the sputtering treatment space 16c to form the surface of the workpiece W. A metal thin film is formed, and a plasma polymerization film forming process is performed as a post-process in the second surface treatment space 16d to form a protective film on the surface of the work W, and the film is formed by the drive of the rotation drive mechanism 27 and the control unit 53. Although the position of the magnet 51 and the movement speed are changed in conjunction with each other, the present invention is not limited to this configuration. For example, these may be individually controlled according to the shape of the workpiece W, or either the posture of the workpiece W may be changed, or the position or movement speed of the film forming magnet 51 may be controlled. In the load lock space 16a, loading (introduction) and unloading (removal) of the workpiece W were performed.

(Thin film formation method)
Next, the basic operation of the thin film forming apparatus 1 will be described with reference to FIGS.

  First, the conveyance table 18 is rotationally driven by the conveyance mechanism 19, the work chambers 17a to 17d are arranged in the spaces 16a to 16d, and the work chambers 17a are arranged by the movement mechanisms 41a to 41d, 42a, 42b, and 42d. ˜17d is brought into contact with the lid member 14 and moved to the first position (see FIGS. 1 and 3). In the first position, the work chambers 17a to 17d are isolated from the main chamber 12, and the internal airtightness is ensured.

  Next, in the load lock space 16a, the vacuum break valve 45a is opened to break the vacuum in the work chamber 17a, and then the opening / closing lid 21a of the work chamber 17a is lifted to remove the holding member 22a, and the work W is moved to the holding member 22a. It fixes and it mounts in the work chamber 17a in the state (refer FIG.6 and FIG.7). Then, the upper opening 20a of the work chamber 17a is sealed with the open / close lid 21a, the vacuum breaker valve 45a is sealed, and then the high vacuum pump 31 is operated to make the inside equal to a predetermined degree of vacuum, that is, the main chamber 12 Exhaust until the vacuum is reached. Thereby, the introduction of the workpiece W in the load lock space 16a is completed. Note that the workpiece W has not yet been introduced into the workpiece chambers 17b to 17d.

  Next, the work chambers 17a to 17d are placed on the transfer table 18 by the moving mechanisms 41a to 41d, 42a, 42b, and 42d and moved to the second position (see FIGS. 2 and 4). The contact members 47 of the contact plates 40a, 40b, and 40d and the adjustment plate 46 move to the lower side of the transport table 18 through the lower openings 55a to 55d. In the second position, the upper openings 20a to 20d and the lower openings 30a to 30d of the work chambers 17a to 17d are opened in the main chamber 12, and the high vacuum exhaust pumps 11 provided in the main chamber 12 respectively The work chambers 17a to 17d are evacuated until a predetermined degree of vacuum is reached.

  By switching the positions of the work chambers 17a to 17d in the main chamber 12 to any of the first position and the second position described above, the work W introduction work and the vacuum processing can be performed easily and continuously. It can be carried out. Hereinafter, each vacuum treatment performed in the first surface treatment space 16b, the sputtering treatment space 16c, and the second surface treatment space 16d will be described.

  After the work W is introduced into the load lock space 16a, the work chambers 17a to 17d at the second position are rotationally driven by the transfer mechanism 19, and the work chamber 17a of the load lock space 16a is moved to the first surface treatment space. To 16b. At this time, the work chamber 17b of the first surface treatment space 16b is transferred to the next sputtering treatment space 16c, the work chamber 17c of the sputtering treatment space 16c is transferred to the next second surface treatment space 16d, and the second The work chamber 17d in the surface treatment space 16d is transferred to the first load lock space 16a.

  After the transfer of the work chambers 17a to 17d is completed, the work chambers 17a to 17d at the second position are moved to the first position. Thereby, in each space 16a-16d, a predetermined | prescribed operation | work or vacuum processing can be performed now. In the first surface treatment space 16b, an inert gas such as argon (Ar) gas is introduced into the conveyed work chamber 17a by a predetermined gas supply means (not shown), and is applied to the high-frequency electrode 48 such as a flat cathode. A connected high-frequency power source (not shown) is operated to pre-treat the surface of the workpiece W. Specifically, an unnecessary object on the surface of the workpiece W is removed to roughen the surface. With this process, a high-quality metal thin film with less unnecessary materials can be formed in the sputtering process to be performed later.

  During the pretreatment in the first surface treatment space 16b, the work W is introduced into the work chamber 17d in the load lock space 16a in the same manner as described above.

  After the pretreatment in the first surface treatment space 16b and the work W introduction work in the load lock space 16a, the work chambers 17a to 17d in the first position are moved to the second position. And each work chamber 17a-17d is rotationally driven by the conveyance mechanism 19, and the work chamber 17a of the 1st surface treatment space 16b is conveyed to the sputtering process space 16c. As described above, the other work chambers 17b to 17d are also transferred to the spaces 16a, 16b, and 16d, respectively.

  After the transfer of the work chambers 17a to 17d is completed, the work chambers 17a to 17d at the second position are moved to the first position. In the sputtering treatment space 16c, an inert gas such as argon (Ar) gas is introduced into the transferred work chamber 17a by a predetermined gas supply means (not shown) and connected to the film-forming sputtering source 50. By operating a power source (not shown) and moving the film forming magnet 51 in the direction of arrow E, plasma is generated, and a metal material such as aluminum (Al) is deposited on the surface of the work W to form a metal thin film. .

  In the present embodiment, as the film-forming sputter source 50, a copper (Cu) base material (Cu base material) as a base plate, an Al material (sputter source) as a metal material, and an embossed Cu plate A target material bonded with (embossed Cu plate) was used. By using the target material having such a configuration, the embossed Cu plate suppresses the welding of the Al material to the Cu base material due to heat generated during the sputtering process, and the Al material deposited during the replacement of the target material is shaved and removed. Can be eliminated. As a result, work efficiency can be improved and cost efficiency can be increased. Of course, in the present embodiment, a target material having a general configuration can also be applied.

  During the sputtering process (metal thin film deposition process) in the sputtering process space 16c, the first surface treatment space 16b performs pre-processing in the work chamber 17d and also in the load lock space 16a. Introduces the workpiece W into the workpiece chamber 17c.

  After the sputtering treatment in the sputtering treatment space 16c, the pretreatment in the first surface treatment space 16b, and the loading operation of the workpiece W in the load lock space 16a, the work chambers 17a to 17d in the first position are moved to the second position. Move to the position. And each work chamber 17a-17d is rotationally driven by the conveyance mechanism 19, and the work chamber 17a of the sputtering process space 16c is conveyed to the 2nd surface treatment space 16d. As described above, the other work chambers 17b to 17d are also transferred to the spaces 16a to 16c, respectively.

  After the transfer of the work chambers 17a to 17d is completed, the work chambers 17a to 17d at the second position are moved to the first position. In the second surface treatment space 16d, a film forming gas such as hexamethyldisiloxane (HMDSO) gas is introduced into the transferred work chamber 17a by a predetermined gas supply means (not shown), and parallel plate electrodes A protective film made of HMDSO polymer is formed on the surface of the workpiece W by operating a high frequency power source (not shown) connected to the high frequency electrode 49 or the like to perform plasma polymerization.

  While the plasma polymerization film forming process is being performed in the second surface treatment space 16d, in the same manner as described above, in the sputtering process space 16c, the sputtering process is performed in the work chamber 17d, and the first surface treatment is performed. In the space 16b, pre-processing is performed in the work chamber 17c, and in the load lock space 16a, the work W is introduced into the work chamber 17b.

  After the plasma polymerization film forming process in the second surface treatment space 16d and the work W loading operation and the vacuum processes in the spaces 16a to 16c, the work chambers 17a to 17d in the first position are moved to the second position. Move to the position. And each work chamber 17a-17d is rotationally driven by the conveyance mechanism 19, and the work chamber 17a of the 2nd surface treatment space 16d is conveyed to the load lock space 16a. As described above, the other work chambers 17b to 17d are also transferred to the spaces 16b to 16d, respectively.

  After the transfer of the work chambers 17a to 17d is completed, the work chambers 17a to 17d at the second position are moved to the first position. In the load lock space 16a, the transferred work W in the work chamber 17a is taken out as described above, and a new work W is introduced. Further, while the work W is being introduced and removed in the load lock space 16a, each vacuum treatment is performed in each of the spaces 16b to 16d as described above.

  As described above, in the thin film forming apparatus 1, the work chambers 17 a to 17 d are moved to the first position when the above-described work W is introduced or removed, or when each vacuum process is performed on the work W. When the work chambers 17a to 17d are transferred to the spaces 16a to 16d, the work chambers 17a to 17d are moved to the second position. As a result, the thin film forming apparatus 1 simply puts the workpiece W and changes various vacuums such as surface treatment and thin film formation only by changing the vertical position of the work chambers 17a to 17d in the main chamber 12. Processing can be performed continuously.

  If the thin film forming apparatus 1 is a work W having a shape and dimensions that can be fixed to the holding members 22a to 22d and accommodated in the work chambers 17a to 17d, the various thin films W can be continuously vacuum processed. Can do. Further, the thin film forming apparatus 1 can easily attach and detach the holding members 22a to 22d with one touch, and can perform the main chamber 12 without opening it to the atmosphere. High quality and high performance thin film formation can be realized in a short time. Thereby, the flexibility of the thin film forming apparatus 1 is greatly improved, and various products can be processed by one unit. Furthermore, since the thin film forming apparatus 1 is simple in the airtight mechanisms provided in the moving mechanisms 41a to 41d, 42a, 42b, and 42d, the cost can be reduced and the reliability can be increased.

  As described above, the excellent effects of the thin film forming apparatus according to the present invention cannot be realized by the vacuum processing apparatuses disclosed in Patent Documents 1 to 3, for example. That is, since the vacuum processing apparatuses of Patent Document 1 and Patent Document 2 execute thin film formation by sputtering and protective film formation by plasma CVD in the same chamber, a plurality of work chambers are appropriately provided in each processing space. It is not possible to carry out a predetermined process by conveying, and there is a limit to speeding up the film formation.

  The vacuum processing apparatus disclosed in Patent Document 3 sequentially transports two work chambers each having a first opening and a second opening between a load lock space and a sputtering processing space, and performs processing through the first opening. An object (work) can be taken in and out, and vacuum breakage and exhaust can be appropriately performed through the second opening. However, in this apparatus, the work chamber into which the workpiece is introduced during the vacuum processing is transferred to the vacuum processing space by the transfer mechanism, and at least one of the first opening and the second opening is opened in the main chamber. If different vacuum processes are simultaneously performed in three or more work chambers in order to perform the process, the quality and performance of the thin film may be deteriorated. Therefore, it is difficult for this apparatus to perform different processes by appropriately transporting the four work chambers to each processing space.

  Further, in the vacuum processing apparatus described in Patent Document 3, when removing the holding member for fixing the work in the work chamber, it is necessary to open the main chamber to the atmosphere, and time is required for evacuation. Therefore, in this apparatus, the holding member cannot be attached or detached with a single touch, and it becomes difficult to reduce the working time and cost.

(Other embodiments)
Although one embodiment of the present invention has been described above, the basic configuration of the present invention is not limited to the above-described embodiment. For example, in the present embodiment, the shape of each space and the work chamber in plan view is a substantially square shape, but is not limited to this shape, and various plan view shapes such as a substantially circular shape, a substantially elliptical shape, and a polygonal shape can be used. It is good also as a shape.

  In the embodiment described above, the thin film forming apparatus is provided with four work chambers. However, the present invention is not limited to this, and the number of work chambers may be three or five or more. Further, the planar shape of each work chamber is not limited to the quadrangular shape shown in the figure, and various shapes such as a circular shape, an elliptical shape, and a polygonal shape can be given. It can be appropriately determined according to the above.

  In this embodiment, each work chamber is lifted to the lid member side using a moving mechanism in each space. However, the present invention does not use such a moving mechanism, for example, by a bellows exhaust pipe or an exhaust pipe. Each work chamber may be lifted individually. Alternatively, the vertical movement (for example, a stroke of 5 mm) of each work chamber in the main chamber is performed using, for example, a linear guide such as an LM guide (registered trademark), and the vertical movement of each contact plate (for example, (10 mm stroke) may be performed using the moving mechanism described above. When each work chamber is moved up and down with a linear guide, this linear guide is arranged on the outer wall (rotation drive mechanism side) of each work chamber, and each work chamber is placed on the peripheral edge of the transfer table via the linear guide. Fix it. In this case, the width (outer diameter) of the transfer table is a size that fits in the region between the outer walls (rotation drive mechanism side) of each work chamber, and the size of the peripheral edge does not contact the edge of each contact plate. The one molded into Since such a conveyance table does not need to be provided with an opening, the vertical movement of each contact plate can be performed more smoothly, and the working time can be shortened.

  In the above-described embodiment, as an example of the vacuum treatment, pretreatment (removal of unnecessary materials and roughening) and post-treatment (plasma polymerization film-forming treatment) are given in the surface treatment, and sputtering treatment is given in the film-forming treatment. However, the present invention is not limited to this. For example, the surface treatment can include, for example, reverse sputtering treatment, ion implantation treatment, electron beam irradiation treatment, vacuum heating treatment, chemical vapor deposition (CVD), etc. For example, vapor deposition, chemical vapor deposition, ion plating and the like can be mentioned. Other than these, etching / surface processing includes reactive ion etching (RIE), chemical dry etching (CDE), ion milling (Ion Milling: IM), and focused ion beam etching. (Focused Ion Beam etching: FIB), reactive ion beam etching, and the like.

  In the sputtering process, an example using aluminum (Al) as a metal material has been described. However, the present invention is not limited to this. For example, chromium (Cr), tin (Sn), indium (In), etc. May be.

  In the above-described embodiment, the lower opening of each work chamber acts as a vacuum breaker and a vacuum roughing port when the work is introduced and removed, and in a state where each work chamber is lowered onto the transfer table, Although the thin film forming apparatus is configured to act as a high vacuum exhaust port, the present invention is not limited to this. For example, each lower opening may be used as a power introduction port for rotating, swinging, vibrating, or the like of the workpiece.

  In the above-described embodiment, the simplest configuration is exemplified, but the present invention is not limited to this. That is, according to the present invention, in each space, power is introduced into each work chamber through each lower opening, and rotation, rotation, vibration, oscillation, parallel movement with respect to the work or other elements are performed. Various motions such as vertical movement can be appropriately given. For example, when etching is performed instead of sputtering in a sputtering process space, the etching position of the workpiece may be adjusted, or power for disposing the etching mask may be introduced through the lower opening of the workpiece chamber. it can.

  In the above-described embodiment, an example in which each holding member is connected to the rotation drive mechanism using each engagement recess and engagement projection has been described, but the present invention is not limited to this. For example, the workpiece W may be configured to rotate, rotate, vibrate, or swing using a cam mechanism, a gear mechanism, or the like.

  INDUSTRIAL APPLICABILITY The present invention can be used when a workpiece having various shapes such as a plastic molded product, which is used for a reflector of a headlamp of an automobile, an instrument, and the like.

DESCRIPTION OF SYMBOLS 1 Thin film forming apparatus 10 Base 11, 31, 32 High vacuum exhaust pump 12 Main chamber 13, 20a-20d Upper opening 14 Lid member 15 Opening / closing mechanism 16a Load lock space 16b 1st surface treatment space 16c Sputtering treatment space 16d 2nd Surface treatment space 17a-17d Work chamber 18 Transport table 19 Transport mechanism 21a-21d Open / close lid 22a-22d Holding member 23a-23d, 24a-24d Engaging recess 25a-25d, 26a-26d Engaging projection 27 Rotation drive mechanism 28b -28d Rotating shaft member 29a-29d Connection member 30a-30d, 55a-55d Lower opening 33a, 33b, 33d Bellows exhaust pipe 34-36, 57 Exhaust pipe 37a, 37b, 37d, 39a, 39b, 39d, 221a-221d Through Hole 3 a, 38b, 38d, 40a, 40b, 40d Contact plate 41a-41d, 42a, 42b, 42d Moving mechanism 43a-43d, 44a, 44b, 44d Expandable part 45a, 45b, 45d Vacuum break valve 46 Adjusting plate 47 Contact Members 48, 49 High-frequency electrode 50 Film-forming sputter source 51 Film-forming magnet 52 Magnet drive mechanism 53 Controllers 54a to 54d Openings 56a to 56d Openings W Workpiece

In order to achieve the above object, the first aspect of the present invention is the rotationally symmetric position of four spaces including a load lock space, a first surface treatment space, a sputtering treatment space, and a second surface treatment space. A main chamber that is provided in the main chamber, and is arranged in any one of the four spaces. The four work chambers that are open in the vertical direction are different from each other in the vertical direction. The moving means for moving to the second position and the second position and the four work chambers are held, and when the four work chambers are moved to the second position, the four work chambers are simultaneously rotated. conveying means for conveying either one of the other of said four spaces and an exhaust means for exhausting the main chamber, before Symbol main Chang A lid member that seals the upper opening of the work chamber, and when the four work chambers are moved to the first position, the upper opening of any of the work chambers disposed in the load lock space can be opened. the lid with a lid member for sealing the upper opening of the other three work chambers, in a case where the four work chambers is moved to the first position, the upper opening of the four work chambers to and individual exhaust means for exhausting independently each in a state sealed by a member through the lower opening of the four work chambers, in a case where the four work chambers is moved to the first position, the load Processing means for performing individual processing on an object to be processed in three processing spaces other than the lock space, and at the first position, Introduction or removal of the object to be treated is carried out in click space, separate processing on the processing object is performed and the three processing spaces other than the load lock space, and in the second position, the four work chambers both of the upper opening and lower opening is opened into the main chamber, the state in which the four work chambers is evacuated by the exhaust unit via the main chamber, the Rukoto Do can be conveyed by said conveying means The thin film forming apparatus is characterized.

In the second aspect of the present invention, the individual exhaust means for exhausting one work chamber arranged in a predetermined space among the work chambers arranged in three processing spaces other than the load lock space also serves as the exhaust means. In the first position, one work chamber disposed in the predetermined space is evacuated by the exhaust means through the lower opening communicating with the main chamber, and the other three work chambers are Exhaust by the individual exhaust means connected to the lower opening, and in the second position, the upper openings of the four work chambers are opened in the main chamber, and the one of the work chambers of the predetermined space When a lower opening is opened in the main chamber, the individual exhausts are placed in the lower openings of the other three work chambers. And a state in which stages are connected, both the upper opening and the lower opening of the four work chambers is opened to the main chamber, and ready for transport by the transport means, characterized in that there are The thin film forming apparatus according to the first aspect.

According to a third aspect of the present invention, in the first surface treatment space, first surface treatment means for pretreating the treatment object using high-frequency plasma, and in the sputtering treatment space, the treatment object Sputter processing means for forming a uniform metal thin film by performing sputtering treatment on the substrate, and second surface treatment means for performing post-treatment on the workpiece using high-frequency plasma in the second surface treatment space The thin film forming apparatus according to the first aspect or the second aspect is provided.

According to a fourth aspect of the present invention, in the sputtering process means, the film forming material of the metal thin film is a target material containing aluminum, chromium, tin, indium, or an alloy thereof . In the thin film forming apparatus of the aspect.

According to a fifth aspect of the present invention, the target material includes a copper base plate, an aluminum target, and an embossed copper plate bonded together, and the embossed copper plate is the copper base plate and the aluminum target. The thin film forming apparatus according to the fourth aspect is arranged between the two.

In order to achieve the above object, the first aspect of the present invention is the rotationally symmetric position of four spaces including a load lock space, a first surface treatment space, a sputtering treatment space, and a second surface treatment space. A main chamber that is provided in the main chamber, and is arranged in any one of the four spaces. The four work chambers that are open in the vertical direction are different from each other in the vertical direction. The moving means for moving to the second position and the second position and the four work chambers are held, and when the four work chambers are moved to the second position, the four work chambers are simultaneously rotated. A transfer means for transferring from any one of the four spaces to another, an exhaust means for exhausting the interior of the main chamber, and the main chamber. A lid member that seals the upper opening of the work chamber, and when the four work chambers are moved to the first position, the upper opening of any of the work chambers disposed in the load lock space can be opened. And a lid member that seals the upper openings of the other three work chambers, and the upper openings of the four work chambers when the four work chambers are moved to the first position. Individual evacuation means for independently evacuating each of the four work chambers through the lower openings of the four work chambers in a state of being sealed by a member; and when the four work chambers are moved to the first position, the load and processing means for individually processing on the processing object in the three processing spaces other than the lock space, in the sputtering process space, the processing Sputtering means for forming a uniform metal thin film by subjecting a product to sputtering treatment, a copper base plate, an aluminum target, and an embossed shape used as a film forming material for the metal thin film in the sputter processing means A target material including aluminum, wherein the embossed copper plate is disposed between the copper base plate and the aluminum target, and the load lock is provided at the first position. The workpieces are introduced or removed in the space, and the individual workpieces are individually processed in the three processing spaces other than the load lock space. In the second position, the four work chambers Both the upper opening and the lower opening are opened in the main chamber, The thin film forming apparatus is characterized in that the chamber can be transported by the transport unit in a state where the chamber is exhausted by the exhaust unit through the main chamber.

A third aspect of the present invention, in the first surface-treatment space, a first surface-treatment means for performing pre-processing on the processing object using a high frequency plasma, before Symbol second surface-treatment space, A thin film forming apparatus according to the first aspect or the second aspect, comprising: second surface treatment means for performing post-treatment on the object to be treated using high-frequency plasma.

According to a fourth aspect of the present invention, a holding member that is detachably provided in each of the four work chambers and holds the workpiece in a predetermined posture, and the holding member is rotated in the work chamber. The thin film forming apparatus according to any one of the first to third aspects, further comprising changing means for changing the object to be processed into a predetermined posture.

According to a fifth aspect of the present invention, there is provided control means for controlling a driving speed of a magnet for sputtering treatment in conjunction with a change in the posture of the workpiece by the changing means in a work chamber disposed in the sputtering treatment space. The thin film forming apparatus according to the fourth aspect is characterized by comprising:

Claims (7)

A main chamber having four spaces at a rotationally symmetric position; a load lock space, a first surface treatment space, a sputtering treatment space, and a second surface treatment space;
Four work chambers open in the vertical direction, housed in the main chamber and disposed in any of the four spaces;
Conveying means for holding the four work chambers and simultaneously rotating the four work chambers to convey from one of the four spaces to the other;
Exhaust means for exhausting the main chamber;
Moving means for moving the four work chambers to a first position and a second position which are different in the vertical direction;
A lid member for sealing an upper opening of the main chamber, wherein when the four work chambers are moved to the first position, an upper opening of any of the work chambers disposed in the load lock space is formed. A lid member that can be opened and seals the upper openings of the other three work chambers;
Individual exhaust means for exhausting each of the three work chambers disposed in the three processing spaces other than the load lock space when the four work chambers are moved to the first position;
Processing means for performing individual processing on an object to be processed in three processing spaces other than the load lock space;
In the first position, the processing object is introduced or removed in the load lock space, and the individual processing is performed on the processing object in three processing spaces other than the load lock space,
In the second position, the upper opening of any one of the work chambers is opened into the main chamber, and the lower opening of any of the work chambers is separated from the individual exhaust unit, and is transferred by the transfer unit. A thin film forming apparatus. First surface treatment means for pretreating the object to be treated using high frequency plasma in the first surface treatment space;
Sputter processing means for forming a uniform metal thin film by performing a sputtering process on the object to be processed in the sputtering process space;
2. The thin film forming apparatus according to claim 1, further comprising: a second surface treatment unit that performs post-treatment on the workpiece using high-frequency plasma in the second surface treatment space.   The thin film forming apparatus according to claim 2, wherein the post-treatment is plasma polymerization or chemical vapor deposition.   4. The thin film according to claim 2, wherein in the sputter processing means, the film forming material of the metal thin film is a target material containing aluminum, chromium, tin, indium, or an alloy thereof. Forming equipment.   The thin film forming apparatus according to claim 4, wherein the target material is formed by bonding a copper base plate, an aluminum target, and an embossed copper plate. A holding member that is detachably provided in each of the four work chambers and holds the workpiece in a predetermined posture;
The thin film formation according to claim 1, further comprising a changing unit that rotates the holding member in the work chamber to change the object to be processed to a predetermined posture. apparatus. The apparatus further comprises control means for controlling a driving speed of a sputtering process magnet in conjunction with a change in the posture of the object to be processed by the changing means in a work chamber disposed in the sputtering process space. 7. The thin film forming apparatus according to 6.

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