JP6600505B2 - Vacuum deposition system - Google Patents

Description

  The present invention relates to a vacuum film forming apparatus used for forming a multilayer film.

  Various coating products in which a thin film is formed on a film formation target (work) such as a resin molded product are manufactured. In addition, in order to increase the functionality of a film-formed product, a multilayer film in which thin films are stacked in multiple layers is also performed. For example, Patent Document 1 proposes a vacuum film forming apparatus that can efficiently form a multilayer film.

  A vacuum film formation apparatus according to Patent Document 1 includes a film formation rotating body having a plurality of film formation cells for holding a film formation object in a vacuum chamber, and film formation on the film formation object held in the film formation cell. A first film forming unit and a second film forming unit. The vacuum film formation apparatus according to Patent Document 1 includes a film formation target in a film formation cell at a position facing the first film formation processing unit and a film formation cell at a position facing the second film formation processing unit. It is possible to perform film formation on the film formation object in parallel.

JP 2004-59967 A

  By the way, a conventional vacuum film forming apparatus (a vacuum film forming apparatus according to Patent Document 1), for example, allows a space for holding a film formation target of a film forming cell to communicate only with the load lock chamber or is vacuumed together with the load lock chamber. In order to switch whether to communicate with the space in the chamber, a pressing body is provided. And the movement of this press body is performed according to the motion of the bellows controlled by supply and discharge | emission of pressurized air.

  For this reason, the conventional vacuum film-forming apparatus needs to be provided with a device for supplying and discharging pressurized air, a bellows, and a pressing body, and there is a problem that the device configuration becomes complicated and costs are increased.

  Furthermore, the film formation object of the film formation cell located at the position facing the first film formation processing unit and the film formation object of the film formation cell located at the position facing the second film formation processing unit are formed. Each of them can be performed in parallel, but the degree of vacuum required in the film forming process of the first film forming unit is different from the degree of vacuum required in the film forming process of the second film forming unit. For this reason, in order to simultaneously perform different film forming processes in parallel, the film forming process space for performing each film forming process is set as a sealed space, and a vacuum pump is provided so as to have a pressure corresponding to each film forming process. It is necessary to prepare.

  For this reason, the conventional vacuum film-forming apparatus has a problem that a vacuum pump is required for each film-forming process, which makes the apparatus structure complicated and expensive.

  The present invention has been made paying attention to such problems, and an object of the present invention is to provide a vacuum film forming apparatus having a simple configuration and a reduced manufacturing cost.

  In order to solve the above-described problems, a vacuum film formation apparatus according to one embodiment of the present invention holds a film formation target that rotates around a central axis of a vacuum chamber and the vacuum chamber in the vacuum chamber. Provided on the outer peripheral side of at least one plasma polymerization section provided on the outer peripheral side of the plurality of film forming cells and the vacuum chamber, and performs film formation on the target to be formed by plasma polymerization, and on the outer peripheral side of the vacuum chamber At least one sputter unit that forms a film by sputtering on the film formation target, and a partition wall that partitions between the plasma polymerization unit and the sputter unit, And forming a film-forming process space for performing a film-forming process together with the plasma-polymerizing part when in the position facing the plasma-polymerizing part. Gap having a predetermined dimension between the wall and the deposition cell is formed.

  According to the above configuration, the film formation cell can be formed by plasma polymerization on the film formation object by rotating the film formation cell around the central axis in the vacuum chamber and disposing it at the position facing the plasma polymerization portion. . Here, the position facing the plasma polymerization part is the position where the film formation target held in the film formation cell faces the plasma polymerization part.

  In the film formation processing space, a gap is formed between the partition wall that partitions the plasma polymerization part and the sputtering part and the film formation cell. For this reason, the rotational movement of the film formation cell is not hindered by the partition wall. Further, since the gap is formed, each of the film forming cell, the plasma polymerization portion, and the sputtering portion is in communication. For this reason, when the gas in the vacuum chamber is discharged after completion of the film forming process by the plasma polymerization unit, the gas such as unreacted gas accumulated in the film forming cell can also be discharged outside the vacuum chamber. it can.

  It should be noted that the predetermined size of the gap is within a range in which the plasma generated when performing the film forming process on the object to be formed by plasma polymerization does not enter the adjacent sputter part through the gap. It is defined as a dimension that allows gas accumulated in the vacuum chamber at the end of film processing to be exhausted in a predetermined time. The size of the gap can be appropriately set according to the type of gas (gas containing organic matter) used in the plasma polymerization part or the material of the target used in the sputtering part.

  As described above, the vacuum film formation apparatus according to one embodiment of the present invention does not need to include a device for supplying and discharging pressurized air, a bellows, a pressing body, and the like, as compared with a conventional vacuum film formation apparatus. A film can be formed on an object to be formed by plasma polymerization and sputtering. Therefore, the vacuum film formation apparatus according to one embodiment of the present invention has an effect of being able to suppress the manufacturing cost with a simple configuration.

  The vacuum film-forming apparatus which concerns on the other aspect of this invention WHEREIN: The above-mentioned structure WHEREIN: The edge part of the said partition wall by the side in which the said gap part is formed may be return | folded and curved.

  Since the end portion of the partition wall is curved, even if the partition wall is deformed due to an unexpected factor such as high heat or impact, the deposition wall rotates around the central axis of the vacuum chamber. Can be prevented from interfering with the rotational movement of the.

  Further, in the vacuum film forming apparatus according to another aspect of the present invention, in the above configuration, the film forming cell includes a holding surface for holding the film formation target and both sides of the holding surface. A pair of side surfaces projecting toward the outer periphery of the vacuum chamber, and the planar shape of the film-forming cell formed by the holding surface and the pair of side surfaces is substantially U-shaped. When the film formation cell is in a position facing the plasma polymerization portion, the partition wall and the side surface are arranged on a substantially straight line, and the gap portion is formed between them. There may be.

  Here, in the trajectory drawn by the rotational movement of the film formation cell, the trajectory drawn on the outermost peripheral side is the trajectory drawn by the tip of the side surface protruding from the holding surface. Moreover, when the partition wall and the tip of the side surface are closest to each other, both are arranged on a substantially straight line.

  According to the above configuration, when the film formation cell is at a position facing the plasma polymerization portion, the partition wall and the side surface are disposed on a substantially straight line. That is, when the film formation cell is at a position facing the plasma polymerization portion, the size of the gap formed by the partition wall and the side surface can be minimized.

  For this reason, the dimension of the gap is set within a range in which, for example, the plasma generated when the film formation process is performed on the film formation target by plasma polymerization does not enter the adjacent sputter part through the gap. Can do.

  In addition, a vacuum film forming apparatus according to another aspect of the present invention includes an exhaust device that exhausts gas in the vacuum chamber in the above-described configuration, and the exhaust device includes the plasma polymerization unit in the vacuum chamber. The pressure may be adjusted to a pressure required when the film is formed on the film formation target and a pressure required when the film is formed on the film formation target by the sputtering unit. .

  Moreover, the vacuum film-forming apparatus which concerns on the other aspect of this invention is the above-mentioned structure. WHEREIN: The said plasma superposition | polymerization part has a 1st plasma superposition | polymerization part and a 2nd plasma superposition | polymerization part, The said 1st plasma superposition | polymerization part The film formation may be performed by plasma polymerization on the film formation target at the same time in the part and the second plasma polymerization part.

  According to the above configuration, since the first plasma polymerization portion and the second plasma polymerization portion are provided, it is possible to simultaneously form a film by plasma polymerization on the film formation target attached to each of the two film formation cells. it can. For this reason, the processing time concerning the whole film-forming process performed to a film-forming target object can be shortened. Further, in the vacuum chamber, the plasma polymerization in the first plasma polymerization unit and the plasma polymerization in the second plasma polymerization unit are performed simultaneously, so that the pressure in the vacuum chamber can be adjusted with one exhaust device.

  Here, “simultaneously” means that a film is formed by plasma polymerization on an object to be formed after two film forming cells are arranged so as to face the first plasma polymerization part and the second plasma polymerization part, respectively. The start timing and / or the end timing do not need to be exactly the same. That is, it is only necessary that the execution period of the plasma polymerization performed in the first plasma polymerization unit and the execution period of the plasma polymerization performed in the second plasma polymerization unit overlap at least partially.

  Moreover, the vacuum film-forming apparatus which concerns on the other aspect of this invention is the above-mentioned structure. WHEREIN: The said sputter | spatter part has a 1st sputter | spatter part and a 2nd sputter | spatter part, The said 1st sputter | spatter part and the said 1st sputter | spatter The film formation by sputtering may be simultaneously performed on the film formation target in the two sputtering units.

  According to the above configuration, since the first sputtering unit and the second sputtering unit are provided, it is possible to simultaneously form films on the film forming objects attached to the two film forming cells by sputtering. For this reason, the processing time concerning the whole film-forming process performed to a film-forming target object can be shortened. Further, since the sputtering in the first sputtering unit and the sputtering in the second sputtering unit are simultaneously performed in the vacuum chamber, the pressure in the vacuum chamber can be adjusted with one exhaust device.

  Here, “simultaneously” means that the film formation by sputtering is performed on the film formation target after the two film formation cells are arranged so as to face the first sputtering unit and the second sputtering unit, respectively. The start timing and / or the end timing do not need to be exactly the same. That is, it is only necessary that the execution period of sputtering performed in the first sputtering unit and the execution period of sputtering performed in the second sputtering part overlap at least partially.

  The vacuum film-forming apparatus according to the present invention is configured as described above, and has an effect of being able to suppress the manufacturing cost with a simple configuration.

It is a top view which shows an example of schematic structure in the vacuum chamber with which the vacuum film-forming apparatus which concerns on embodiment of this invention is provided. It is a top view which shows an example of schematic structure in the vacuum chamber with which the vacuum film-forming apparatus which concerns on embodiment of this invention is provided. 3 is a flowchart showing an example of a processing flow of a multilayer film forming process in the vacuum film forming apparatus shown in FIGS. It is a top view which shows an example of schematic structure in the vacuum chamber with which the vacuum film-forming apparatus which concerns on the modification 1 of embodiment of this invention is provided. It is a top view which shows an example of schematic structure in the vacuum chamber with which the vacuum film-forming apparatus which concerns on the modification 2 of embodiment of this invention is provided.

  Hereinafter, a specific configuration example of the vacuum film forming apparatus 1 according to the embodiment of the present invention will be described with reference to the drawings. In the following description, the same or corresponding elements are denoted by the same reference symbols throughout all the drawings, and redundant description thereof is omitted.

(Configuration of vacuum deposition system)
The configuration of the vacuum film forming apparatus 1 will be described with reference to FIGS. 1 and 2 are plan views showing an example of a schematic configuration in a vacuum chamber 10 provided in the vacuum film forming apparatus 1 according to the embodiment of the present invention. In FIGS. 1 and 2, for example, a supply pipe of gas such as argon gas supplied to the plasma polymerization unit 5 and the sputtering unit 6, a power supply unit for supplying power to these, and the vacuum chamber 10 An exhaust device for exhausting gas is not shown.

  In the present embodiment, as the vacuum film forming apparatus 1, a film forming apparatus used for producing a reflector around an automobile lamp will be described as an example. Here, the reflector is mainly produced by the following steps. For example, an aluminum film is formed on the surface of the reflector main body (film formation object 2) formed of a thermosetting resin or the like, and a protective film is formed thereon. The vacuum film forming apparatus 1 has a configuration in which an aluminum film is formed by sputtering in a sputtering unit 6 described later, and a protective film is formed by plasma polymerization in a plasma polymerization unit 5 described later.

  As shown in FIGS. 1 and 2, the vacuum film forming apparatus 1 includes a vacuum chamber 10, two film forming cells 3 provided in the vacuum chamber 10, a loading / unloading unit 4, a plasma polymerization unit 5, a sputtering unit. A portion 6 and a partition wall 7 are provided. The carry-in / out unit 4, the plasma polymerization unit 5, and the sputtering unit 6 are provided on the outer peripheral side of the vacuum chamber 10, and the film forming cell 3 is provided inside the vacuum chamber 10 so as to be surrounded by these members. Yes.

  The carry-in / out unit 4 unloads the film-forming target 2 and attaches the film-forming target 2 to the film-forming cell 3 or removes the film-forming target 2 that has been subjected to the film-forming process from the film-forming cell 3. It is a space for carrying in. The unloading / unloading section 4 is provided with a door (not shown), and the film forming cell 3 provided in the vacuum chamber 10 can be accessed by opening the door. The door provided in the loading / unloading unit 4 may be an open / close door or a sliding door.

  The plasma polymerization unit 5 performs film formation by plasma polymerization on the film formation target 2 attached to the film formation cell 3. A gas containing an organic substance (for example, hexamethyldisiloxane (HMDS)) is supplied to the plasma polymerization unit 5 through a pipe (not shown), and a high voltage is applied by a high-frequency electrode (not shown) provided in the plasma polymerization unit 5. By applying this, a plasma excited state by discharge can be created, and a polymer thin film can be formed on the surface of the film formation target 2.

  In addition to the above-described plasma polymerization, the plasma polymerization unit 5 also cleans the film formation target object 2 by ion bombardment processing as pre-processing of the film formation processing. When performing the ion bombardment process, the plasma polymerization unit 5 ionizes a process gas such as argon gas with high-frequency plasma, and strikes the film formation target 2 for cleaning. Therefore, when ion bombardment processing is performed in the plasma polymerization unit 5, a process gas such as argon gas is supplied through a pipe (not shown) instead of the gas containing HMDS.

  The sputtering unit 6 is provided so as to be adjacent to the plasma polymerization unit 5, and forms a film on the film formation target 2 by sputtering. The sputter unit 6 includes a sputter electrode to which a plate-like target (not shown) is attached. For example, argon gas is supplied to the sputter unit 6 through a pipe (not shown). The target can be, for example, aluminum. Note that when the film formation cell 3 is located at a position facing the sputtering unit 6, the target is provided to face the film formation target 2 attached to the film formation cell 3.

  The film formation cell 3 holds the film formation object 2 in the vacuum chamber 10, and rotates around the central axis O around the central axis O extending in the vertical direction of the vacuum chamber 10. It is configured to stop at a position facing the carry-in / out unit 4, the plasma polymerization unit 5, and the sputtering unit 6. That is, in the vacuum film forming apparatus 1, when the film forming cell 3 is a rotating part, the carry-in / out part 4, the plasma polymerization part 5, and the sputter part 6 can be regarded as fixed parts.

  Moreover, as shown in FIG. 1 and FIG. 2, a partition wall 7 is provided for partitioning between the plasma polymerization part 5 and the sputter part 6. In the vacuum film forming apparatus 1 according to the present embodiment, the side of the sputter unit 6 that is not adjacent to the plasma polymerization unit 5, the plasma polymerization unit of the carry-in / out unit 4, between the carry-in / out unit 4 and the plasma polymerization unit 5. A partition wall 7 is further provided on each of the side portions not adjacent to 5. That is, a total of four partition walls 7 are provided in the vacuum chamber 10. The partition wall 7 includes a partition wall main body portion 71, a slide portion 72 provided in the vicinity of the distal end portion of the partition wall main body portion 71, and a connecting portion 73 that connects the partition wall main body portion 71 and the slide portion 72. It is the composition which becomes. The partition wall 7 can adjust the protrusion amount of the slide part 72 from the partition wall main body 71 by the connecting part 73. For this reason, the partition wall 7 can be made variable in length. As shown in FIGS. 1 and 2, the end of the partition wall 7 (more precisely, the tip of the slide portion 72) is folded and curved.

  As shown in FIGS. 1 and 2, the film formation cell 3 includes a pair of protrusions that protrude toward the outer periphery of the vacuum chamber 10 from the holding surface 32 for holding the film formation target object 2 and both sides of the holding surface 32. The side surface 31 is provided, and the planar shape of the vacuum film forming apparatus 1 as viewed from the upper side to the lower side is substantially U-shaped. When the film formation cell 3 is at a position facing the carry-in / out section 4, the plasma polymerization section 5, or the sputtering section 6, the main surface of the holding surface 32 is a position facing each section. In addition, a rotation shaft (not shown) is provided in the vacuum chamber 10 along a central axis O extending in the vertical direction, and the film formation cell 3 rotates around the central axis O according to the rotational movement of the rotation shaft. can do. As described above, the film forming cell 3 has a substantially U-shaped planar shape, and when it is in a position facing the plasma polymerization unit 5 or the sputter unit 6, it is formed together with the plasma polymerization unit 5 or the sputter unit 6. A film formation processing space for performing a film process can be formed.

  Here, plasma (plasma-state HMDS fluid) generated during the film formation process by the plasma polymerization from the film formation processing space formed by the plasma polymerization part 5 and the film formation cell 3 enters the sputter part 6. When leaking toward the target and depositing on the target, the voltage from the sputter electrode is not applied, and sputtering cannot be performed in the sputter unit 6. For this reason, it is necessary to prevent the plasma generated during the film forming process by the plasma polymerization from leaking toward the sputter unit 6 from the film forming process space formed by the plasma polymerization unit 5 and the film forming cell 3. There is. On the other hand, argon gas used for sputtering or sputtered aluminum leaks from the film formation processing space formed by the sputter unit 6 and the film formation cell 3 toward the plasma polymerization unit 5 to the surface of the high-frequency electrode. When adhering, the surface of the high-frequency electrode is usually made of stainless steel, so that there is no particular problem when performing plasma polymerization.

  By the way, in the vacuum film forming apparatus 1 according to the present embodiment, a gap portion 8 having a predetermined dimension is formed between the partition wall 7 and the film forming cell 3 in the film forming processing space. For this reason, the rotational movement of the film forming cell 3 serving as the rotating part is not hindered by the carry-in / out part 4 serving as the fixed part, the plasma polymerization part 5, the sputter part 6 and the like. Furthermore, also in the exhaust after film formation, the gas accumulated in the film formation processing space can be discharged to the outside through the gap portion 8. On the other hand, the plasma generated during the film forming process by the plasma polymerization from the film forming space formed by the plasma polymerization part 5 and the film forming cell 3 as described above is directed toward the sputter part 6. It is necessary to prevent leakage.

  Therefore, the size of the gap 8 is set to a range in which plasma generated at least when the film formation process is performed on the film formation target by plasma polymerization does not enter the adjacent sputter unit 6 through the gap 8. There is a need to. Furthermore, the dimension of the gap 8 needs to be in a range in which the gas in the film formation processing space is discharged within a predetermined time in the exhaust after film formation.

  The vacuum film forming apparatus 1 according to the present embodiment is devised so that the dimension of the gap 8 becomes an appropriate dimension as follows. First, as described above, the partition wall 7 can be made variable in length by adjusting the protruding amount of the slide part 72 from the partition wall main body 71 by the connecting part 73. In addition, the arrangement relationship between the partition wall 7 and the film formation cell 3 is devised so that the following arrangement relationship is obtained when at least the film formation cell 3 faces the plasma polymerization portion 5. That is, as shown in FIG. 2, when at least the film-forming cell 3 is facing the plasma polymerization part 5, the partition wall 7 and the side surface 31 of the film-forming cell 3 are arranged on the straight line AA. The vacuum film forming apparatus 1 is configured so that the dimension of the gap portion 8 formed in the minimum is the smallest. That is, in the trajectory drawn by the rotational movement of the film forming cell 3, the trajectory drawn on the outermost peripheral side is the trajectory C drawn by the tip of the side surface 31 protruding from the holding surface 32. The partition wall 7 and the tip of the side surface 31 are closest to each other when they are arranged on the straight line AA.

  Even when the film formation cell 3 is facing the sputtering unit 6, the partition wall 7 and the side surface 31 of the film formation cell 3 may be arranged on the same straight line. It does not have to be arranged on the line. This is because when sputtering is performed in the sputter unit 6, argon gas supplied to the film formation processing space formed by the film formation cell 3 and the sputter unit 6 and sputtered aluminum are passed through the gap 8. This is because there is no problem even if it leaks toward the plasma polymerization portion 5 and adheres to a high-frequency electrode (not shown).

(Deposition process)
Next, in addition to FIG. 1 and FIG. 2 described above, a processing flow of the multilayer film forming process performed in the vacuum film forming apparatus 1 according to the present embodiment will be described with reference to FIG. FIG. 3 is a flowchart showing an example of the processing flow of the multilayer film forming process in the vacuum film forming apparatus 1 shown in FIGS.

  First, the film formation object 2 is fixed to the film formation cell 3 (step S11). Specifically, as shown in FIG. 1, one film formation cell 3 is positioned facing the carry-in / out section 4. Then, the operator opens the door of the loading / unloading unit 4 and fixes the attachment plate 33 to which the plurality of film formation objects 2 are attached to the holding surface 32 of the film formation cell 3 via the plurality of attachment fittings 34. In this way, when the film formation object 2 is fixed to one film formation cell 3, the two film formation cells 3 are closed so that the other film formation cell 3 is positioned facing the loading / unloading unit 4. Is rotated in a clockwise direction, for example. In the other film forming cell 3, the film forming object 2 is fixed to the holding surface 32 in the same manner as the one film forming cell 3.

  When the film formation object 2 is fixed to the two film formation cells 3 in this way, the operator closes the door of the carry-in / out section 4 and the film formation object held in one film formation cell 3. The two deposition cells 3 are rotated so that 2 is now in a position facing the plasma polymerization part 5.

  Next, pre-processing is performed on the film formation target 2 (step S12). That is, the pressure (negative pressure) in the vacuum chamber 10 is adjusted to a predetermined level by an auxiliary pump provided in an exhaust device (not shown). 1 and 2, the exhaust device is not particularly illustrated, but in the present embodiment, the exhaust device includes a main pump disposed on the vacuum chamber 10, and an auxiliary pump connected to the main pump and the vacuum chamber 10. And have. For example, a turbo molecular pump can be used as the main pump, and an oil rotary pump can be used as the auxiliary pump. Note that the combination of the main pump and the auxiliary pump is not limited to this combination. For example, the main pump may be a cryopump or an oil diffusion pump.

  When the pressure in the vacuum chamber 10 is adjusted to a predetermined magnitude, one film formation is performed by ion bombardment processing in the film formation processing space formed by the plasma polymerization unit 5 and the film formation cell 3. The film formation surface of the film formation target object 2 held in the cell 3 is cleaned. When the cleaning of the film formation surface of the film formation target object 2 held in one film formation cell 3 is completed, the position where the film formation target object 2 held in the other film formation cell 3 faces the plasma polymerization unit 5 Thus, the two film forming cells 3 are rotated. Similarly, the film formation target 2 held in the other film formation cell 3 is also cleaned by ion bombardment processing.

  Next, sputtering is performed on the film formation target 2 (step S13). That is, the two film formation cells 3 are rotated, and one film formation cell 3 is moved to a position facing the sputtering unit 6. Furthermore, the inside of the vacuum chamber 10 is changed to a predetermined high vacuum state by switching to a main pump provided in an exhaust device (not shown). Then, an aluminum film is formed on the film formation object 2 held in one film formation cell 3 by sputtering in the film formation processing space formed by the sputtering unit 6 and the film formation cell 3. Similarly, an aluminum film is also formed by sputtering on the film formation object 2 held in the other film formation cell 3.

  Next, plasma polymerization is performed on the film formation target 2 (step S14). That is, the two film formation cells 3 are rotated, and one film formation cell 3 is moved to a position facing the plasma polymerization unit 5. Further, by switching to an auxiliary pump provided in an exhaust device (not shown), the inside of the vacuum chamber 10 is brought into a predetermined low vacuum state in which the pressure is higher than that during sputtering. A protective film is formed on the aluminum film of the film formation object 2 held in one film formation cell 3 by plasma polymerization in the film formation processing space formed by the plasma polymerization unit 5 and the film formation cell 3. Form a film. Similarly, a protective film is formed on the film formation target object 2 held in the other film formation cell 3 by plasma polymerization. In this manner, the multilayer film forming process is performed in the vacuum film forming apparatus 1 according to the present embodiment.

(Modification 1)
Next, Modification 1 of the vacuum film forming apparatus 1 according to the present embodiment will be described. The vacuum film forming apparatus 1 according to the present embodiment described above has a configuration in which one plasma polymerization unit 5 and one sputtering unit 6 are provided as shown in FIGS. 1 and 2. However, as shown in FIG. 4, the vacuum film forming apparatus 100 according to the modification 1 includes two plasma polymerization units 5 (first plasma polymerization unit 5a) in the configuration of the vacuum film forming apparatus 1 according to this embodiment. And the second plasma polymerization part 5b). The vacuum film forming apparatus 100 according to the first modification is the same as the present embodiment except that the first plasma polymerization unit 5a and the second plasma polymerization unit 5b are provided at positions facing each other on the outer periphery of the vacuum chamber 10. Since it is the same structure as the vacuum film-forming apparatus 1 which concerns, the same code | symbol is attached | subjected about the same member and the detailed description is abbreviate | omitted. FIG. 4 is a plan view showing an example of a schematic configuration in the vacuum chamber 10 provided in the vacuum film forming apparatus 100 according to Modification 1 of the embodiment of the present invention.

  Since the vacuum film forming apparatus 100 according to the modified example 1 includes the first plasma polymerization unit 5a and the second plasma polymerization unit 5b, the film formation target object 2 held in one film formation cell 3 and the other component are formed. A protective film can be formed on the film formation object 2 held in the film cell 3 by plasma polymerization at the same time. For this reason, the vacuum film-forming apparatus 100 which concerns on the modification 1 can shorten the period which performs the film-forming process of a multilayer film rather than the vacuum film-forming apparatus 1 which concerns on this Embodiment. In particular, since the plasma polymerization that requires the most time in the formation of the multilayer film can be simultaneously performed on the film formation target object 2 held in each of the two film formation cells 3, the film formation process of the multilayer film It is advantageous to realize a shortening of the implementation period.

  In the vacuum film forming apparatus 100 according to the first modification, the film forming processes performed simultaneously in the vacuum chamber 10 are plasma polymerization by the first plasma polymerization unit 5a and plasma polymerization by the second plasma polymerization unit 5b. For this reason, what is necessary is just to adjust the pressure in the vacuum chamber 10 with an auxiliary pump, for example, and it is not necessary to provide a pump for every film-forming process.

(Modification 2)
The vacuum film forming apparatus 100 according to Modification 1 described above has a configuration in which a first plasma polymerization unit 5a, a second plasma polymerization unit 5b, and a sputtering unit 6 are provided as shown in FIG. However, as illustrated in FIG. 5, the vacuum film forming apparatus 101 according to Modification 2 includes two sputtering units 6 (first sputtering unit 6 a and second sputtering unit) in the configuration of the vacuum film forming apparatus 100 according to Modification 1. The sputter unit 6b) is provided. That is, the vacuum film forming apparatus 101 according to the modified example 2 is provided with the first sputter unit 6a and the second sputter unit 6b at positions facing each other on the outer periphery of the vacuum chamber 10, and although not particularly shown, Except for the point provided below the vacuum chamber 10, the configuration is the same as that of the vacuum film forming apparatus 1 according to the first modification. For this reason, the same code | symbol is attached | subjected about the same member and the detailed description is abbreviate | omitted. FIG. 5 is a plan view showing an example of a schematic configuration in the vacuum chamber 10 provided in the vacuum film forming apparatus 101 according to the second modification of the embodiment of the present invention.

  As illustrated in FIG. 5, the vacuum film forming apparatus 101 according to the second modification has a configuration in which the second sputtering unit 6 b is provided at the position of the loading / unloading unit 4 included in the vacuum film forming apparatus 100 according to the first modification. ing. For this reason, in the vacuum film forming apparatus 101 according to the modification 2, the loading / unloading unit 4 is provided on the lower side (bottom side) of the vacuum chamber, and the mounting plate 33 to which the plurality of film forming objects 2 are attached from the lower side is vacuum It is carried into the chamber and is configured to be fixed to the film forming cell 3 via the mounting bracket 34. When the film formation process for the film formation target 2 is completed, the film formation cell 3 is accessed from the lower side of the vacuum chamber 10, the attachment plate 33 is removed from the film formation cell 3, and the film formation target object 2 is carried out. I do.

  Further, since the vacuum film forming apparatus 101 according to the modified example 2 includes the first sputter unit 6a and the second sputter unit 6b, the film formation target object 2 held in one film formation cell 3 and the other component are formed. The aluminum film can be formed by simultaneously sputtering the film formation object 2 held in the film cell 3. For this reason, the vacuum film formation apparatus 101 according to Modification 2 can further shorten the period for performing the film formation process of the multilayer film, as compared with the vacuum film formation apparatus 1 according to Modification 1.

  Further, in the vacuum film forming apparatus 101 according to the modified example 2, the film forming process simultaneously performed in the vacuum chamber 10 is sputtering by the first sputter unit 6a and sputtering by the second sputter unit 6b. For this reason, what is necessary is just to adjust the pressure in the vacuum chamber 10 with a main pump, for example, and it is not necessary to provide a pump for every film-forming process.

  The vacuum film forming apparatus 101 according to the modified example 2 has the configuration including the two first plasma polymerization units 5a and the second plasma polymerization unit 5b, but includes only one plasma polymerization unit 5 and plasma polymerization. It is good also as a structure which provided the carrying in / out part 4 in the position facing the part 5. FIG.

  In the vacuum film formation apparatus 1 according to the present embodiment, the vacuum film formation apparatus 100 according to Modification Example 1, and the vacuum film formation apparatus 101 according to Modification Example 2, a plurality of components are formed on the holding surface 32 of the film formation cell 3. It was the structure which fixes the attachment plate 33 to which the membrane target object 2 was attached. In order to improve the processing efficiency of the film forming process, for example, the vacuum film forming apparatuses 1, 100, 101 and the film forming cell 3 are enlarged in the height direction, and a plurality of mounting plates 33 are formed on the holding surface 32 with this height. It is good also as a structure which can be mounted side by side in the vertical direction.

  In the vacuum film forming apparatuses 1, 100, and 101, the two film forming cells 3 are arranged so as to be symmetric with respect to the central axis O of the vacuum chamber 10. The arrangement relationship is not limited to this.

  From the foregoing description, many modifications and other embodiments of the present invention are apparent to persons skilled in the art. Accordingly, the foregoing description should be construed as illustrative only and is provided for the purpose of teaching those skilled in the art the best mode of carrying out the invention. The details of the structure and / or function may be substantially changed without departing from the spirit of the invention.

  The present invention can be used in a vacuum film forming apparatus that performs different film forming processes in a vacuum chamber and forms a multilayer film on a film formation target.

DESCRIPTION OF SYMBOLS 1 Vacuum film-forming apparatus 2 Film-forming object 3 Film-forming cell 5 Plasma superposition | polymerization part 5a 1st plasma superposition | polymerization part 5b 2nd plasma superposition | polymerization part 6 Spatter part 6a 1st sputter part 6b 2nd sputter part 7 Partition wall 8 Gap part 10 Vacuum chamber 31 Side surface 32 Holding surface 100 Vacuum film forming apparatus 101 Vacuum film forming apparatus O Center axis

Claims (6)

A vacuum chamber;
In the vacuum chamber, a plurality of film formation cells holding a film formation target that rotates around the central axis of the vacuum chamber;
At least one plasma polymerization section provided on the outer peripheral side of the vacuum chamber and performing film formation on the film formation object by plasma polymerization;
At least one sputter unit provided on the outer peripheral side of the vacuum chamber and performing film formation on the film formation target by sputtering;
A partition wall that partitions between the plasma polymerization portion and the sputtering portion ;
With
When the film formation cell is at a position facing the plasma polymerization part, a film formation process space for performing a film formation process is formed together with the plasma polymerization part, and the partition wall and the component formation are formed in the film formation process space. gap having a predetermined size is formed between the membrane cell,
The partition wall includes a partition wall main body portion, a slide portion, and a connecting portion that adjusts a protruding amount of the slide portion from the partition wall main body portion,
The vacuum film-forming apparatus in which the front-end | tip part of the said slide part becomes an edge part of the said partition wall by the side in which the said gap | interval part is formed . The vacuum film forming apparatus according to claim 1, wherein an end of the partition wall on the side where the gap is formed is folded and curved. The film formation cell includes a holding surface for holding the film formation target;
A planar shape of the film-forming cell formed by the holding surface and the pair of side surface surfaces, and a pair of side surface surfaces projecting from both side portions of the holding surface toward the outer periphery of the vacuum chamber. Is a substantially U-shaped shape,
The partition wall and the side surface are arranged on a substantially straight line when the film formation cell is at a position facing the plasma polymerization portion, and the gap is formed between the two. The vacuum film-forming apparatus described in 1. An exhaust device for exhausting the gas in the vacuum chamber;
The exhaust device includes a pressure necessary for forming a film on the film formation target by the plasma polymerization unit in the vacuum chamber, and a film formation on the film formation target by the sputtering unit. The vacuum film-forming apparatus according to any one of claims 1 to 3, wherein the vacuum film-forming apparatus is adjusted to a pressure necessary for the operation. The plasma polymerization part has a first plasma polymerization part and a second plasma polymerization part,
5. The vacuum film formation apparatus according to claim 1, wherein film formation by plasma polymerization is performed on the film formation target simultaneously in the first plasma polymerization unit and the second plasma polymerization unit. The sputter unit has a first sputter unit and a second sputter unit,
6. The vacuum film forming apparatus according to claim 1, wherein film formation by sputtering is simultaneously performed on the film formation target in the first sputtering unit and the second sputtering unit. 7.

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