JP2018049809A - ビーム電流計測器、荷電粒子ビーム照射装置 - Google Patents
ビーム電流計測器、荷電粒子ビーム照射装置 Download PDFInfo
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- JP2018049809A JP2018049809A JP2017018150A JP2017018150A JP2018049809A JP 2018049809 A JP2018049809 A JP 2018049809A JP 2017018150 A JP2017018150 A JP 2017018150A JP 2017018150 A JP2017018150 A JP 2017018150A JP 2018049809 A JP2018049809 A JP 2018049809A
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- beam current
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- 239000002245 particle Substances 0.000 title claims abstract description 18
- 238000009826 distribution Methods 0.000 claims abstract description 16
- 238000001514 detection method Methods 0.000 claims abstract description 12
- 238000005259 measurement Methods 0.000 claims abstract description 12
- 230000001629 suppression Effects 0.000 claims description 6
- 238000007493 shaping process Methods 0.000 claims description 3
- 238000010884 ion-beam technique Methods 0.000 description 26
- 238000010894 electron beam technology Methods 0.000 description 7
- 238000004458 analytical method Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004949 mass spectrometry Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/0046—Arrangements for measuring currents or voltages or for indicating presence or sign thereof characterised by a specific application or detail not covered by any other subgroup of G01R19/00
- G01R19/0061—Measuring currents of particle-beams, currents from electron multipliers, photocurrents, ion currents; Measuring in plasmas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
- G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
- G01R15/24—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using light-modulating devices
- G01R15/245—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using light-modulating devices using magneto-optical modulators, e.g. based on the Faraday or Cotton-Mouton effect
- G01R15/246—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using light-modulating devices using magneto-optical modulators, e.g. based on the Faraday or Cotton-Mouton effect based on the Faraday, i.e. linear magneto-optic, effect
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/0092—Arrangements for measuring currents or voltages or for indicating presence or sign thereof measuring current only
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/29—Measurement performed on radiation beams, e.g. position or section of the beam; Measurement of spatial distribution of radiation
- G01T1/2914—Measurement of spatial distribution of radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J25/00—Transit-time tubes, e.g. klystrons, travelling-wave tubes, magnetrons
- H01J25/02—Tubes with electron stream modulated in velocity or density in a modulator zone and thereafter giving up energy in an inducing zone, the zones being associated with one or more resonators
- H01J25/10—Klystrons, i.e. tubes having two or more resonators, without reflection of the electron stream, and in which the stream is modulated mainly by velocity in the zone of the input resonator
- H01J25/12—Klystrons, i.e. tubes having two or more resonators, without reflection of the electron stream, and in which the stream is modulated mainly by velocity in the zone of the input resonator with pencil-like electron stream in the axis of the resonators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/244—Detectors; Associated components or circuits therefor
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Health & Medical Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Molecular Biology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Measurement Of Radiation (AREA)
- Electron Sources, Ion Sources (AREA)
Abstract
【解決手段】荷電粒子ビーム照射装置に並設されたビーム電流計測器BDに於いて、並設方向に検出領域が途切れなく連続した複数の捕集電極1を備えており、捕集電極1をビーム受光側からみたとき、隣り合う捕集電極1が部分的に重なっており、捕集電極1を選択的に切換える切換え回路を有する。
【選択図】図1
Description
ここで述べた検出領域とは、捕集電極1でイオンビームIBを受光する領域であり、換言すればイオンビームIBから見えている捕集電極1の部位に相当する。
なお、マスク4は接地されており、2次電子抑制電極3には接地電位を基準にして負の電圧が印加されている。
また、図2(B)のように、各捕集電極1に接続された切換え回路Sの1つをオン状態とし、残りをオフ状態にしておけば、任意の捕集電極1で検出されたビーム電流を計測することが可能となる。さらに、切換え回路Sのオン状態を順番に切り替え、各捕集電極1を通じてビーム電流の計測を行うことで、ビーム電流分布を知ることが出来る。
このイオン注入装置IMにおいて、ビーム電流計測器BDはイオンビームIBの輸送経路や処理室16に配置されている。
また、荷電粒子ビームの形状は、スポット状の形状に限られず、一方向に長いシート状のビームやリボンビームであってもよい。
2.絶縁支持板
3、22.2次電子抑制電極
4、21.マスク
5.計測端子
11.イオン源
12.引出電極
13.質量分析電磁石
14.分析スリット
15.ターゲット
BD.ビーム電流計測器
S.切換え回路
FC.ファラデーカップ
Claims (5)
- 荷電粒子ビームのビーム電流分布計測に用いられ、
並設方向において検出領域が途切れなく連続した複数の捕集電極を備えているビーム電流計測器。 - 前記捕集電極をビーム受光側からみたとき、隣り合う捕集電極が部分的に重なっている請求項1記載のビーム電流計測器。
- 計測対象とする前記捕集電極を選択的に切換える切換え回路を有する請求項1または2記載のビーム電流計測器。
- 前記捕集電極のビーム受光側にビーム整形用のマスクと2次電子抑制電極を有し、前記マスクと前記電極には複数の捕集電極に対応した単一の開口が形成されている請求項1乃至3のいずれか1項に記載のビーム電流計測器。
- 請求項1乃至4のいずれか1項に記載のビーム電流計測器を、ビーム輸送経路またはターゲットが加工される処理室に備えた荷電粒子ビーム照射装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/271854 | 2016-09-21 | ||
US15/271,854 US10222400B2 (en) | 2016-09-21 | 2016-09-21 | Beam current measuring device and charged particle beam irradiation apparatus |
Publications (2)
Publication Number | Publication Date |
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JP2018049809A true JP2018049809A (ja) | 2018-03-29 |
JP6481834B2 JP6481834B2 (ja) | 2019-03-13 |
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JP2017018150A Active JP6481834B2 (ja) | 2016-09-21 | 2017-02-03 | ビーム電流計測器、荷電粒子ビーム照射装置 |
Country Status (4)
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US (1) | US10222400B2 (ja) |
JP (1) | JP6481834B2 (ja) |
KR (1) | KR102075344B1 (ja) |
CN (1) | CN107863284B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20210053206A (ko) | 2019-11-01 | 2021-05-11 | 스미도모쥬기가이 이온 테크놀로지 가부시키가이샤 | 이온주입장치 및 빔프로파일러 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN108615666B (zh) * | 2016-12-09 | 2024-04-19 | 上海凯世通半导体股份有限公司 | 束流检测装置 |
CN110879409B (zh) * | 2019-11-20 | 2021-06-01 | 中国科学院近代物理研究所 | 一种实时监测宽幅带电粒子束密度分布的探测器 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6346729A (ja) * | 1986-08-15 | 1988-02-27 | Toshiba Corp | 荷電ビ−ム描画装置 |
JPH0557754U (ja) * | 1992-01-10 | 1993-07-30 | 日新電機株式会社 | ビーム電流測定装置 |
JPH08179046A (ja) * | 1994-12-27 | 1996-07-12 | Nissin Electric Co Ltd | ファラデーカップ |
JP2000082432A (ja) * | 1998-09-08 | 2000-03-21 | Nissin High Voltage Co Ltd | ビームプロファイルモニタ |
JP2007531239A (ja) * | 2004-04-02 | 2007-11-01 | バリアン・セミコンダクター・イクイップメント・アソシエーツ・インコーポレーテッド | イオン注入に基づくプラズマのファラデードーズ及び均一性監視背景技術 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0770296B2 (ja) | 1989-05-15 | 1995-07-31 | 日新電機株式会社 | イオン注入装置 |
JP4216313B2 (ja) * | 2004-06-07 | 2009-01-28 | パイオニア株式会社 | 電子ビーム位置変動測定方法、電子ビーム位置変動測定装置、電子ビーム記録装置 |
US7109499B2 (en) * | 2004-11-05 | 2006-09-19 | Varian Semiconductor Equipment Associates, Inc. | Apparatus and methods for two-dimensional ion beam profiling |
US7435977B2 (en) * | 2005-12-12 | 2008-10-14 | Axcelis Technologies, Inc. | Ion beam angle measurement systems and methods for ion implantation systems |
US8791426B2 (en) * | 2009-11-24 | 2014-07-29 | Lawrence Livermore National Security, Llc. | Electron beam diagnostic system using computed tomography and an annular sensor |
JP5324534B2 (ja) * | 2010-07-29 | 2013-10-23 | 株式会社日立ハイテクノロジーズ | 検査方法及び装置 |
-
2016
- 2016-09-21 US US15/271,854 patent/US10222400B2/en active Active
-
2017
- 2017-02-03 JP JP2017018150A patent/JP6481834B2/ja active Active
- 2017-04-11 CN CN201710234557.5A patent/CN107863284B/zh active Active
- 2017-06-12 KR KR1020170073145A patent/KR102075344B1/ko active IP Right Grant
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6346729A (ja) * | 1986-08-15 | 1988-02-27 | Toshiba Corp | 荷電ビ−ム描画装置 |
JPH0557754U (ja) * | 1992-01-10 | 1993-07-30 | 日新電機株式会社 | ビーム電流測定装置 |
JPH08179046A (ja) * | 1994-12-27 | 1996-07-12 | Nissin Electric Co Ltd | ファラデーカップ |
JP2000082432A (ja) * | 1998-09-08 | 2000-03-21 | Nissin High Voltage Co Ltd | ビームプロファイルモニタ |
JP2007531239A (ja) * | 2004-04-02 | 2007-11-01 | バリアン・セミコンダクター・イクイップメント・アソシエーツ・インコーポレーテッド | イオン注入に基づくプラズマのファラデードーズ及び均一性監視背景技術 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20210053206A (ko) | 2019-11-01 | 2021-05-11 | 스미도모쥬기가이 이온 테크놀로지 가부시키가이샤 | 이온주입장치 및 빔프로파일러 |
US11205560B2 (en) | 2019-11-01 | 2021-12-21 | Sumitomo Heavy Industries Ion Technology Co., Ltd. | Ion implanter and beam profiler |
Also Published As
Publication number | Publication date |
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CN107863284A (zh) | 2018-03-30 |
KR102075344B1 (ko) | 2020-02-10 |
KR20180032166A (ko) | 2018-03-29 |
US20180080959A1 (en) | 2018-03-22 |
US10222400B2 (en) | 2019-03-05 |
JP6481834B2 (ja) | 2019-03-13 |
CN107863284B (zh) | 2020-09-04 |
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