JP2018049199A5 - - Google Patents

Download PDF

Info

Publication number
JP2018049199A5
JP2018049199A5 JP2016185295A JP2016185295A JP2018049199A5 JP 2018049199 A5 JP2018049199 A5 JP 2018049199A5 JP 2016185295 A JP2016185295 A JP 2016185295A JP 2016185295 A JP2016185295 A JP 2016185295A JP 2018049199 A5 JP2018049199 A5 JP 2018049199A5
Authority
JP
Japan
Prior art keywords
wet etching
glass substrate
local
substrate
opening
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2016185295A
Other languages
Japanese (ja)
Other versions
JP2018049199A (en
Filing date
Publication date
Application filed filed Critical
Priority to JP2016185295A priority Critical patent/JP2018049199A/en
Priority claimed from JP2016185295A external-priority patent/JP2018049199A/en
Publication of JP2018049199A publication Critical patent/JP2018049199A/en
Publication of JP2018049199A5 publication Critical patent/JP2018049199A5/ja
Pending legal-status Critical Current

Links

Claims (13)

ガラス基板の主表面をウェットエッチング液によって局所的に加工してフォトマスク用基板を製造する局所ウェットエッチング装置において、
ガラス基板を支持する基板支持手段と、
前記基板支持手段によって支持された前記ガラス基板の主表面に対向するように前記ガラス基板の下側に配置されるウェットエッチング手段と、
前記基板支持手段と前記ウェットエッチング手段とを相対移動させる相対移動手段を備え、
前記ウェットエッチング手段は上面に前記ウェットエッチング液を前記ガラス基板の主表面に供給する開口部を有し、少なくとも前記開口部における前記ガラス基板の主表面と対向する面は前記ウェットエッチング液に対して撥液性を有する材料で構成されているウェットエッチング槽と、リンス槽と、を有することを特徴とする局所ウェットエッチング装置。
In a local wet etching apparatus for manufacturing a photomask substrate by locally processing the main surface of a glass substrate with a wet etching solution,
Substrate support means for supporting the glass substrate;
Wet etching means disposed on the lower side of the glass substrate so as to face the main surface of the glass substrate supported by the substrate supporting means;
Relative movement means for relatively moving the substrate support means and the wet etching means,
The wet etching means has an opening for supplying the wet etching solution to the main surface of the glass substrate on the upper surface, and at least a surface of the opening facing the main surface of the glass substrate is in contact with the wet etching solution. A local wet etching apparatus comprising a wet etching tank made of a material having liquid repellency and a rinsing tank.
前記ウェットエッチング槽は、前記開口部の上面から流出したウェットエッチング液を回収する回収手段を備えることを特徴とする請求項1記載の局所ウェットエッチング装置。   The local wet etching apparatus according to claim 1, wherein the wet etching tank includes a collecting unit that collects a wet etching solution that has flowed out from an upper surface of the opening. 前記開口部を構成する材料は、ポリテトラフルオロエチレンであることを特徴とする請求項1又は2に記載の局所ウェットエッチング装置。   The local wet etching apparatus according to claim 1, wherein the material constituting the opening is polytetrafluoroethylene. 前記開口部の縁部は、所定の厚みを有し、当該縁部の最内周の高さが最外周の高さよりも低い傾斜面を備えていることを特徴とする請求項1乃至3のいずれか一に記載の局所ウェットエッチング装置。   The edge part of the said opening part has predetermined | prescribed thickness, and is provided with the inclined surface where the height of the innermost periphery of the said edge part is lower than the height of an outermost periphery. The local wet etching apparatus as described in any one. 前記開口部の形状は、平面視で矩形であることを特徴とする請求項1及至4のいずれか一に記載の局所ウェットエッチング装置。   The local wet etching apparatus according to any one of claims 1 to 4, wherein the shape of the opening is rectangular in plan view. 前記傾斜面は、前記基板支持手段と前記ウェットエッチング手段とが水平移動する方向に備えられていることを特徴とする請求項記載の局所ウェットエッチング装置。 5. The local wet etching apparatus according to claim 4 , wherein the inclined surface is provided in a direction in which the substrate support means and the wet etching means move horizontally. 前記開口部は、前記基板支持手段と前記ウェットエッチング手段とが水平移動する方向に垂直な方向に、前記ウェットエッチング液が前記開口部の下面に向かって流出する流路を備えていることを特徴とする請求項5又は6記載の局所ウェットエッチング装置。   The opening is provided with a flow path through which the wet etching solution flows toward the lower surface of the opening in a direction perpendicular to a direction in which the substrate support means and the wet etching means move horizontally. The local wet etching apparatus according to claim 5 or 6. 前記ウェットエッチング槽は、前記基板支持手段に対して水平移動する方向に垂直な方向に複数配置されていることを特徴とする請求項1及至7いずれか一に記載の局所ウェットエッチング装置。   The local wet etching apparatus according to any one of claims 1 to 7, wherein a plurality of the wet etching tanks are arranged in a direction perpendicular to a direction of horizontal movement with respect to the substrate support means. 前記相対移動手段は、前記ウェットエッチング手段を上下方向に移動させる上下移動手段を備えていることを特徴とする請求項1及至8いずれか一に記載の局所ウェットエッチング装置。   The local wet etching apparatus according to any one of claims 1 to 8, wherein the relative movement unit includes a vertical movement unit that moves the wet etching unit in a vertical direction. 前記上下移動手段は、前記ウェットエッチング液及び前記ウェットエッチング液により発生する腐食性ガスから隔離する隔離手段を備えていることを特徴とする請求項9に記載の局所ウェットエッチング装置。   The local wet etching apparatus according to claim 9, wherein the vertical movement unit includes an isolation unit that isolates the wet etching solution and a corrosive gas generated by the wet etching solution. 前記相対移動手段は、前記基板支持手段を水平方向に移動させる水平移動手段を備えることを特徴とする請求項1及至10いずれか一に記載の局所ウェットエッチング装置。   The local wet etching apparatus according to claim 1, wherein the relative movement unit includes a horizontal movement unit that moves the substrate support unit in a horizontal direction. 請求項1乃至11のいずれか一に記載の局所ウェットエッチング装置を用いて、
前記ガラス基板を前記基板支持手段に載置し、
前記相対移動手段を用いて、局所ウェットエッチングを行う前記ガラス基板の所定の場所に前記ウェットエッチング手段をセットし、
前記ガラス基板の所定の場所を局所ウェットエッチングすることを特徴とするフォトマスク用基板の製造方法。
Using the local wet etching apparatus according to any one of claims 1 to 11,
Placing the glass substrate on the substrate support means;
Using the relative movement means, set the wet etching means in a predetermined place of the glass substrate to perform local wet etching,
A method for manufacturing a substrate for a photomask, comprising performing local wet etching on a predetermined location of the glass substrate.
ガラス基板の主表面上の一部に対してウェットエッチング液を接触させることにより局所ウェットエッチングを行ってフォトマスク用基板を製造するフォトマスク用基板の製造方法において、
前記局所ウェットエッチングを行う前記ガラス基板の主表面が下向きになるように前記ガラス基板を保持し、
開口部を有し、少なくとも前記開口部の前記ガラス基板主表面と対向する面は前記ウェットエッチング液に対して撥液性を有する材料で構成されたウェットエッチング槽と、リンス槽とを用意し、
前記ウェットエッチング槽の前記開口部の上面に前記ウェットエッチング液を保持し、
ウェットエッチング手段を前記ガラス基板の主表面に近接させることによって前記ウェットエッチング液を前記ガラス基板の主表面に接触させて局所ウェットエッチングを行った後、リンス槽により前記ガラス基板主表面に残留するウェットエッチング液を除去することを特徴とするフォトマスク用基板の製造方法。
In the method of manufacturing a photomask substrate, a local wet etching is performed by bringing a wet etching solution into contact with a part of the main surface of the glass substrate to manufacture a photomask substrate.
Holding the glass substrate so that the main surface of the glass substrate that performs the local wet etching is downward,
A wet etching bath having a opening and at least a surface facing the main surface of the glass substrate of the opening is made of a material having liquid repellency with respect to the wet etching solution, and a rinse bath is prepared. ,
Holding the wet etching solution on the upper surface of the opening of the wet etching bath;
After the wet etching means is brought into contact with the main surface of the glass substrate by bringing the wet etching means close to the main surface of the glass substrate, local wet etching is performed, and then remains on the main surface of the glass substrate by a rinse bath. A method for producing a photomask substrate, comprising removing a wet etching solution.
JP2016185295A 2016-09-23 2016-09-23 Local wet etching device and manufacturing method of substrate for photomask Pending JP2018049199A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2016185295A JP2018049199A (en) 2016-09-23 2016-09-23 Local wet etching device and manufacturing method of substrate for photomask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016185295A JP2018049199A (en) 2016-09-23 2016-09-23 Local wet etching device and manufacturing method of substrate for photomask

Publications (2)

Publication Number Publication Date
JP2018049199A JP2018049199A (en) 2018-03-29
JP2018049199A5 true JP2018049199A5 (en) 2019-10-03

Family

ID=61767573

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016185295A Pending JP2018049199A (en) 2016-09-23 2016-09-23 Local wet etching device and manufacturing method of substrate for photomask

Country Status (1)

Country Link
JP (1) JP2018049199A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102325256B1 (en) * 2018-08-08 2021-11-11 주식회사 오럼머티리얼 Device for forming pattern of mask and producing method of mask
JP6803018B2 (en) * 2019-03-05 2020-12-23 株式会社Nsc Etching solution for glass and manufacturing method of glass substrate
CN111704364B (en) * 2020-06-30 2022-11-25 福建省卓成环保科技有限公司 Corrosion device and corrosion method for producing local ground glass by chemical method

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03272140A (en) * 1990-03-22 1991-12-03 Fujitsu Ltd Chemical treater for semiconductor substrate
JP3511441B2 (en) * 1996-11-29 2004-03-29 忠弘 大見 Liquid-saving liquid supply nozzle, wet processing apparatus, and wet processing method used for wet processing including cleaning, etching, development, and peeling
JP2002176020A (en) * 2000-09-04 2002-06-21 Sony Corp Apparatus and method for treating substrate as well as method for manufacturing device product
US6555017B1 (en) * 2000-10-13 2003-04-29 The Regents Of The University Of Caliofornia Surface contouring by controlled application of processing fluid using Marangoni effect
JP3737452B2 (en) * 2002-05-31 2006-01-18 株式会社東芝 Etching equipment
JP4725767B2 (en) * 2004-08-12 2011-07-13 有限会社岡本光学加工所 Strain-free surface processing equipment and surface processing technology for optical materials
CA2663325A1 (en) * 2006-10-16 2008-04-24 Materials And Technologies Corporation Wet processing using a fluid meniscus, apparatus and method
JP4775367B2 (en) * 2007-12-03 2011-09-21 東ソー株式会社 Vertical holding device for surface workpiece and surface processing device of surface processing device
JP5153750B2 (en) * 2009-10-09 2013-02-27 三菱電機株式会社 Substrate surface treatment device, solar cell manufacturing device
JP5652381B2 (en) * 2011-11-29 2015-01-14 東ソー株式会社 Surface processing method and apparatus

Similar Documents

Publication Publication Date Title
JP2018049199A5 (en)
US9222191B2 (en) Laminar flow plating rack
JP2010183109A5 (en)
JP2012129566A5 (en) Exposure apparatus and device manufacturing method
JP2011258965A5 (en) Exposure device
JP2012134552A5 (en) Nozzle member, exposure apparatus, device manufacturing method, and exposure method
TW200739793A (en) Vertical boat and vertical heat processing apparatus for semiconductor process
JP5864109B2 (en) Cleaning device
US20140151218A1 (en) Electroplating processor with thin membrane support
US20140273500A1 (en) Metal liftoff tools and methods
KR102111951B1 (en) Wafer rotation apparatus and method for rotating wafer
JP2015028971A (en) Wafer washing apparatus and wafer washing method
JP2012049576A5 (en) Substrate holding device
WO2016011644A1 (en) Wet etching device and etching method therefor
JP5781015B2 (en) Wafer cleaning apparatus and cleaning method for cleaning tank
JP2012060137A5 (en)
JP2013189339A (en) Method and apparatus for manufacturing cover glass for electronic device
CN110813936A (en) Quartz furnace tube immersion cleaning method
CN105399041A (en) Micro-convex oxide layer structure of sensor and manufacturing method thereof
CN204892471U (en) Single groove gasket belt cleaning device
JPH0437131A (en) Pure water washing vessel for semiconductor wafer and washing thereof
KR101687758B1 (en) Stage for plating device
KR20100042015A (en) The apparatus and method of single wafer cleaning
KR20150138921A (en) cassette for etching one side of glass
KR101063039B1 (en) Wafer cleaning method with improved flow method and wafer cleaning tank for same