JP2002176020A - Apparatus and method for treating substrate as well as method for manufacturing device product - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an apparatus for treating a substrate capable of properly treating the substrate by improving a liquid drip after supply of a treating liquid is completed. SOLUTION: A through hole 259 for passing a treating liquid supply nozzle 370 is formed at a center of a shielding plate 250 for shielding an upper surface of the substrate. The nozzle 370 has a double cylindrical structure in which a treating liquid tube 378 is internally engaged with a holding tube member 371. A distal end of the nozzle 370 is formed in a taper shape and formed in a sharp shape having no substantially horizontal surface. A discharge port 387a is formed at the distal end. A gas passage 381 for guiding a nitrogen gas to the substrate is formed at the outside of the nozzle 370. A peripheral edge 20 of the opening of the hole 250 is chamfered.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] The present invention relates to a semiconductor wafer,
The present invention relates to a liquid crystal display device, a glass substrate for a plasma display, and a substrate processing apparatus and a substrate processing method for processing a substrate represented by an optical disk, a magnetic disk, and a substrate for a magneto-optical disk. The present invention also relates to a method for manufacturing a device product by processing a substrate for a device product represented by a semiconductor device, a liquid crystal display device, a plasma display device, an optical disk, a magnetic disk, and a magneto-optical disk.

[0002]

2. Description of the Related Art In a manufacturing process of a device product such as a semiconductor device or a liquid crystal display device, a substrate processing apparatus for supplying a processing liquid (chemical solution or pure water) to a substrate for the device product and performing a surface treatment of the substrate is known. Used. A single-wafer-type substrate processing apparatus that processes substrates one by one includes, for example, a spin chuck that horizontally holds and rotates a substrate, and a process that supplies a chemical solution and pure water to the surface of the substrate held by the spin chuck. And a liquid nozzle. With this configuration, by sequentially supplying a chemical solution and pure water to the substrate, a chemical solution treatment, a water washing process, and the like on the substrate surface can be sequentially performed.
After the water washing process, a drying step is performed in which the spin chuck is rotated at a high speed to shake off and dry the moisture on the substrate surface.

In order to perform the drying step efficiently, nitrogen gas as an inert gas may be supplied to the surface of the substrate. Further, in order to further increase the drying efficiency of the substrate surface by the supply of the nitrogen gas, a shielding plate may be provided to face the substrate held by the spin chuck. The shielding plate is disposed at a position close to the substrate in the drying process, and limits a space on the substrate. Thus, the space near the surface of the substrate is filled with the nitrogen gas atmosphere, so that it is possible to effectively prevent the generation of a watermark due to the reaction between the substrate material and moisture.

In an apparatus having a shielding plate, the processing liquid nozzle is provided so as to pass through the center of the shielding plate, and supplies the processing liquid toward the rotation center of the substrate. As a result, the processing liquid supplied to the substrate spreads outward in the rotational radial direction due to centrifugal force, and contributes to processing of the substrate surface.

[0005]

FIG. 5 is a diagram showing an example of the configuration near the discharge port of the processing liquid nozzle provided through the center of the shielding plate. This processing liquid nozzle has a configuration in which a processing liquid tube 2 is inserted through a holding tube member 1. The holding tube member 1 and the processing liquid tube 2 have horizontal surfaces 1a and 2a at their lower ends. Due to the presence of the horizontal surfaces 1a and 2a, the liquid running out after the completion of the supply of the processing liquid is not always good, and droplets of the processing liquid remain on the horizontal surfaces 1a and 2a. When the substrate is rotated at a high speed during the drying step, the droplets drop on the substrate surface to generate ring-shaped particles.

The droplets adhering to the horizontal surfaces 1a and 2a enter the surrounding gaps and remain due to the air current during the drying process, causing particles. Therefore, an object of the present invention is to solve the above-mentioned technical problem and improve the liquid shortage after the completion of the supply of the processing liquid, thereby enabling the substrate to be satisfactorily processed. It is to provide. Another object of the present invention is to provide a device product manufacturing method capable of favorably processing a substrate for a device product and thereby improving the manufacturing yield of the device product.

[0007]

According to a first aspect of the present invention, there is provided a substrate processing apparatus for processing a substrate by supplying a processing liquid to an upper surface of the substrate (W). And a facing member (250) having a through hole provided opposite to the upper surface of the substrate, and a sharp tip having no substantially horizontal surface provided by being inserted into the through hole (259) of the facing member. A substrate processing apparatus comprising: a processing liquid supply pipe (370) for supplying a processing liquid to an upper surface of a substrate from a formed discharge port (378a). However,
Alphanumeric characters in parentheses represent corresponding components in embodiments described later. Hereinafter, the same applies in this section.

According to the above configuration, the discharge port of the processing liquid supply pipe that penetrates the opposing member provided opposite to the upper surface of the substrate is formed at a sharp tip having substantially no horizontal surface. Therefore, after supplying the processing liquid to the upper surface of the substrate,
No liquid droplets of the processing liquid remain near the discharge port. That is, it is good that the liquid runs out after the supply of the processing liquid. This allows
It is possible to suppress the generation of particles due to the droplets near the discharge port, and to improve the processing quality of the substrate.

Specifically, as described in claim 2, the tip of the processing liquid supply pipe gradually decreases in thickness toward the tip, and the thickness of the pipe wall is substantially reduced at the tip. The tapered portion (11, 12, 21, 23, 23)
24, 25). For example, the tip of the processing liquid supply pipe has a pencil shape (conical shape or polygonal pyramid shape)
May be formed. In this case, a tapered surface (11,12,21,24) which goes from the outer surface to the inner surface of the tube wall as it goes downward is formed at the tip of the processing liquid supply tube.

The shape of the tip of the processing liquid supply pipe may be a shape having tapered surfaces (23, 25) inside.
That is, the tapered surface in this case has a shape that goes from the inner surface to the outer surface of the tube wall as it goes downward. Further, the distal end of the processing liquid supply pipe has tapered surfaces (21, 23, 24, 25) on the inside and outside, respectively.
When these tapered surfaces meet at the lower end of the discharge port, the ridge line (2
2) may be formed.

The processing liquid supply pipe may have a double-tube structure including a processing liquid tube (378) through which the processing liquid flows and a holding pipe member (371) in which the processing liquid tube is fitted. Good. In this case, it is preferable that each end on the discharge port side of the holding tube member and the processing liquid tube is formed in a sharp shape having substantially no horizontal plane. In the present invention, "a sharp tip having substantially no horizontal surface" means that the tip may be sharp enough to achieve the intended effect of the present invention. The meaning is not limited to, for example, the case where a small round is formed at the tip.

According to a third aspect of the present invention, in the processing liquid supply pipe, a boundary portion (15,12) between the tapered portion (11,12) and a straight pipe portion (13,14) connected to the tapered portion.
16) The substrate processing apparatus according to claim 2, wherein (16) is chamfered (preferably, R chamfer (curved chamfer)). According to this configuration, by chamfering the boundary between the tapered portion and the straight pipe portion, it is possible to obtain a structure in which droplets are more difficult to adhere. Thereby, generation of particles can be more reliably prevented.

According to a fourth aspect of the present invention, in the through hole, an opening periphery (20) facing the upper surface of the substrate is chamfered (preferably an R chamfer). A substrate processing apparatus according to any one of the first to third aspects.
According to this configuration, since the periphery of the opening of the through hole formed in the facing member is chamfered, it is possible to prevent droplets from adhering to this portion. Thereby, generation of particles can be further suppressed.

According to a fifth aspect of the present invention, there is further provided an inert gas supply means (365, 381) for introducing an inert gas between the facing member and the substrate through the through hole. A substrate processing apparatus according to any one of claims 1 to 4. In this configuration, by introducing an inert gas between the substrate and the opposing member, the vicinity of the surface of the substrate is set as an inert gas atmosphere, so that oxidation of the substrate surface can be prevented. Further, when the substrate is processed by using the substrate processing apparatus according to any one of claims 1 to 5, it is possible to improve the liquid shortage after the completion of the supply of the processing liquid and improve the substrate quality. Can be processed.

Further, the processing liquid is supplied to the substrate through the processing liquid supply pipe (processing liquid supply step), and the inert gas is supplied to the substrate through the through-hole by the inert gas supply means. More preferably, an active gas is supplied (inert gas supply step), and after these steps, the substrate is dried (substrate drying step). In this way, the oxidation of the processing liquid on the substrate surface can be prevented, and the processing liquid droplets that are being generated near the discharge port of the processing liquid supply pipe in the processing liquid supply step are forcibly dropped. So you can
In the subsequent substrate drying step, it is possible to further prevent droplets of the processing liquid from falling on the substrate and becoming particles.

The invention according to claim 8 is the invention according to claims 1 to 5.
A method for manufacturing a device product, comprising a step of processing a substrate for a device product using the substrate processing apparatus according to any one of the above. According to this method, since the liquid is sufficiently drained after the completion of the supply of the processing liquid, the substrate can be satisfactorily processed, and as a result, the production yield of the device product can be improved. According to a ninth aspect of the present invention, a processing liquid supply step of supplying a processing liquid to a substrate for a device product by the processing liquid supply pipe, and simultaneously with the processing liquid supply step, the through-hole is formed by the inert gas supply means. An inert gas supply step of supplying an inert gas to the substrate for the device product through the above, after the treatment liquid supply step and the inert gas supply step, a substrate drying step of drying the substrate for the device product The method for manufacturing a device product according to claim 8, wherein the method includes:

According to this method, as described in connection with the seventh aspect of the present invention, it is possible to effectively prevent the processing liquid droplets from dropping on the substrate and becoming particles. Thereby, the production yield of the device product can be further improved.

[0018]

Embodiments of the present invention will be described below in detail with reference to the accompanying drawings. FIG. 1 is an illustrative sectional view for explaining the overall configuration of a substrate processing apparatus according to one embodiment of the present invention. This substrate processing apparatus is used in a manufacturing process of a semiconductor device as an example of a device product. This substrate processing apparatus holds a semiconductor wafer (hereinafter, simply referred to as “wafer W”), which is an example of a substrate for a device product, substantially horizontally, and rotates around a vertical axis passing substantially through the center of the held wafer W. A peripheral edge holding chuck 221 is provided in a processing cup (not shown). The wafer W held by the peripheral edge holding chuck 221 is treated with an etching solution as a chemical solution (for example, a washing process), washed with pure water,
Then, a drying process of shaking off and drying the droplets on the surface of the wafer W is performed.

The peripheral edge holding chuck 221 is connected to a drive shaft of a motor 222 as a rotary drive mechanism and is rotated. The drive shaft of the motor 222 is a hollow shaft, into which a back rinse nozzle 223 capable of supplying pure water or an etchant is inserted. The back surface rinsing nozzle 223 is used for the back surface (lower surface) of the wafer W held by the peripheral edge holding chuck 221.
It has a discharge port at a position close to the center, and has a form of a central axis nozzle that supplies pure water or an etchant from the discharge port toward the center of the back surface of the wafer W. Pure water or an etchant is supplied to the back rinse nozzle 223 at a required timing via a pure water supply valve 201 connected to a pure water supply source or an etchant supply valve 202 connected to an etchant supply source. It has become so.

Above the peripheral holding chuck 221, a circle near the center of the lower surface is provided with a nozzle mechanism capable of supplying pure water or an etching solution toward the center of the wafer W held by the peripheral holding chuck 221. Plate-shaped shielding plate 2
50 is provided horizontally. The shielding plate 250 is mounted near the tip of the arm 270 connected to the lifting drive mechanism 260 so as to be rotatable around a vertical axis. The elevating drive mechanism 260 includes a support cylinder 261 and a hollow elevating shaft 2 held by the support cylinder 261 so as to be able to move up and down.
62 and a ball screw mechanism 263 for raising and lowering the elevating shaft 262. The lower end of the lifting shaft 262 is
The bracket 2 is fixed to the bracket 264.
64 is fixed to a nut portion 263a of the ball screw mechanism 263. Screw shaft 263b of ball screw mechanism 263
Are driven to rotate by a motor 263c. Therefore, when the motor 263c is rotated forward / reversely, the elevating shaft 262 moves up and down, and the arm 270 attached to the tip of the elevating shaft 262 moves up and down. Reference numeral 267 denotes a bellows for preventing invasion of pure water or an etchant chemical.

The rotating shaft 271 is inserted through the elevating shaft 262. The rotating shaft 271 is rotatably held by bearings 272 and 273 arranged at the upper and lower ends of the elevating shaft 262, respectively. The lower end of the rotating shaft 271 is coupled to the rotating shaft of a motor 275 attached to the bracket 264 via a coupling 274. A pulley 276 is fixed to the upper end of the rotating shaft 271, and the pulley 276 has an arm 27.
The timing belt 277 disposed in the internal space of No. 0 is wound around. The timing belt 277 has a pulley 252 fixed to a rotation shaft 251 of the shielding plate 250.
Is also wrapped around. Therefore, if the motor 275 is driven to rotate, this rotation is transmitted to the shield plate 250 via the rotating shaft 271 and the timing belt 277, and the shield plate 250 rotates (rotates) about a vertical axis. Thus, a rotation drive mechanism for the shield plate 250 is configured.

When the etching liquid is supplied to the wafer W, the shielding plate 250 is stopped and is at the upper position in the drawing. Then, the wafer W after the processing with the etching solution is performed.
When performing a rinsing process (for example, rinsing with pure water) on the wafer W, the lifting / lowering drive mechanism 260 lowers the arm 270 so that the shielding plate 250 is moved to the surface (upper surface) of the wafer W held by the peripheral edge holding chuck 221. (For example, the gap between the shielding plate 250 and the wafer W is about 5 mm). At the same time, the motor 275 is energized, and the shielding plate 250 rotates near the wafer W at substantially the same speed as the peripheral edge holding chuck 221 in the same direction as the peripheral edge holding chuck 221 (for example, 150 mm).
0 rpm). After the water washing process, the lifting / lowering drive mechanism 260 further lowers the arm 270, so that the shielding plate 250 is brought closer to the surface of the wafer W (for example, the gap between the shielding plate 250 and the wafer W is about 2.5 mm). ). At the same time, the shielding plate 25
No. 0 is rotated at a high speed (for example, about 3000 rpm) in the same direction as the peripheral edge holding chuck 221 at substantially the same speed as the peripheral edge holding chuck 221. In this state, the nitrogen gas is supplied from the vicinity of the center of the shielding plate 250 to a limited space between the wafer W and the shielding plate 250. In this way, the surface of the wafer W can be efficiently dried by setting the vicinity of the surface of the wafer W to a nitrogen atmosphere in parallel with the draining by the rotation of the peripheral edge holding chuck 221. Further, since the shielding plate 250 is rotated synchronously with the peripheral edge holding chuck 221, turbulence of the airflow in the processing chamber is prevented. FIG. 2 is a cross-sectional view illustrating a configuration near the shielding plate 250. The pulley 252 to which the driving force from the timing belt 277 is applied has a hollow rotary shaft 2.
It is fixed to 51. The rotating shaft 251 includes an outer cylinder 255 rotatably held by a holder portion 254 via a pair of bearings 253 and the like, and an inner cylinder 2 fitted inside the outer cylinder 255.
56. The holder part 254 is fixed to the arm 270 and hangs from the lower surface thereof.

The lower end of the inner cylinder 256 projects below the outer cylinder 255 and forms a flange 257 that extends outward from the outer cylinder 255. The shielding plate 250 is fixed to the flange 257 using bolts 258.
In the center of the shielding plate 250, a through hole 259 communicating with the internal space of the inner cylinder 256 is formed. Arm 270
In the upper surface of the inner cylinder 256, the thinned upper end portion of the inner cylinder 256 is covered in a non-contact state over the entire circumference, and a through hole 361 is provided at the center.
The mounting block 360 on which is formed is fixed. A gas passage 362 penetrating from the side surface to the through hole 361 is formed in the mounting block 360.
In addition, a step 363 is provided between the upper surface and the through hole 361.
Are formed. In the gas passage 362, the pipe joint 36 is provided.
4, a nitrogen gas supply pipe 365 is connected. Nitrogen gas is supplied to the nitrogen gas supply pipe 365 at a required timing from a nitrogen gas supply source via a nitrogen gas supply valve 366.

On the other hand, a processing liquid supply nozzle 370 is inserted through the inner cylinder 256 in a non-contact state with the inner cylinder 256.
More specifically, the processing liquid supply nozzle 370 is
6 and a holding tube member 371
1 has a double-tube structure including a processing liquid tube 378 that is inserted and fitted therein. Processing liquid supply nozzle 370
Further, a flange 372 formed on the upper end of the holding tube member 371, a step 373 formed on the lower surface of the flange 372, and a processing liquid tube mounting portion 374 formed on the upper surface of the flange 372. And
Then, the step 373 is attached to the step 3 of the mounting block 360.
When the flange 372 is fixed to the upper surface of the mounting block 360 by bolts 375 in a state where the flange 372 is aligned with the inner cylinder 256 by being fitted to the inner cylinder 256, the mounting is achieved.

The lower end (tip) of the holding tube member 371 is located slightly above the central through hole 259 of the shielding plate 250. The lower end (tip) of the processing liquid tube 378 projects slightly below the lower end of the holding tube member 371. In this way, the processing liquid (pure water or etching liquid) can be supplied from the discharge port 378a at the lower end of the processing liquid tube 378 toward the center of the wafer W held by the peripheral edge holding chuck 221. Has become.

The processing solution tube 378 is connected to the holding tube member 37.
1 and the processing solution tube mounting portion 37
4 fixed. This processing liquid tube 378
, Pure water from a pure water supply source can be supplied through a pure water supply valve 379, and an etching solution from the etching solution supply source can be supplied through an etching solution supply valve 380. . The nitrogen gas from the nitrogen gas supply pipe 365 is supplied to the gas passage 3 of the mounting block 360.
From 62, the gas is guided to a gas passage 381 formed between the inner cylinder 256 and the holding pipe member 371 of the processing liquid supply nozzle 370, and further from the central through hole 259 of the shielding plate 250 toward the surface of the wafer W. Be blown out.

FIG. 3 is a sectional view showing a further enlarged configuration of the vicinity of the through hole 259 of the shielding plate 250. The processing liquid supply nozzle 370 is provided to be inserted into the through hole 259. The tip (lower end) of the processing liquid supply nozzle 370 is formed in a pencil shape (that is, a substantially conical shape), and a discharge port 378a is formed at the tip of the pencil shape. More specifically, each end (lower end) of the holding tube member 371 and the processing liquid tube 378 is formed in a pencil shape, and the processing liquid supply nozzle 370 is formed in a sharp shape having substantially no horizontal surface. I have. That is, the tip of the holding tube member 371 and the processing solution tube 378 are
In each case, the thickness of the tube wall gradually decreases toward the tip,
At the distal end, there are tapered surfaces 11, 12 at which the thickness of the tube wall becomes substantially zero. These tapered surfaces 11, 1
2 has a shape that goes from the outside to the inside of the tube wall toward the distal end (that is, toward the bottom).

The processing liquid supply nozzle 370 having such a configuration is described.
Then, when the processing liquid is discharged from the discharge port 378a and supplied to the wafer W, and then the supply of this processing liquid is stopped, the lower end of the processing liquid supply nozzle 370 is drained satisfactorily and the vicinity of the discharge port 378a No droplets remain on the surface. Further, in this embodiment, the opening edge 20 of the through hole 259 is chamfered, and the opening edge 20 has a tapered surface that spreads outward as approaching the wafer W.
Accordingly, it is possible to prevent the liquid droplet from adhering to the vicinity of the through hole 259 of the shielding plate 250. In addition, the chamfering of the opening peripheral edge 20 may be C-chamfering (planar chamfering), but R-chamfering is preferable.

Thus, the processing liquid supply nozzle 370
Can be prevented from remaining in the vicinity of the wafer W.
Droplets do not fall onto the wafer W when the water is drained and dried by rotating at a high speed. Thereby, the processing quality of the wafer W can be improved. Further, the tip of the processing liquid supply nozzle 370 has a tapered shape, and
Of the gas passage 38 by chamfering the gas passage 38 into a tapered shape.
The flow of the nitrogen gas supplied to the space above the wafer W through 1 becomes smooth, and the stagnation can be prevented. Accordingly, the airflow near the tip of the processing liquid supply nozzle 370 is stabilized, so that water droplets scattered from the surface of the wafer W can be prevented from adhering to a portion near the tip of the processing liquid supply nozzle 370. This can also suppress the generation of particles, and can improve the production yield of the semiconductor device.

In order to more reliably prevent the droplets from remaining near the tip of the processing liquid supply nozzle 370, the tapered surfaces 11 and 12 of the holding pipe member 371 and the processing liquid tube 378 and the straight pipe section above the same are used. Chamfers (preferably, R-chamfers) are provided at the boundaries 15, 16 between the first and second substrates 13, 14.
Is preferably applied. In this embodiment, even while the etching liquid or the pure water (processing liquid) is supplied to the wafer W, the nitrogen gas flows from the through hole 259 near the center of the shielding plate 250 through the gas passage 381. It is supplied to a limited space between the wafer W and the shielding plate 250. In this manner, oxidation of the processing liquid on the surface of the wafer W can be prevented, and droplets of the processing liquid that are being generated near the discharge port of the processing liquid supply nozzle 370 when the processing liquid is supplied to the wafer W can be removed. Since the wafer W can be forcibly dropped beforehand, the wafer W
It is possible to more effectively prevent the droplets of the processing liquid from dropping on and becoming particles. This also contributes to an improvement in the production yield of the semiconductor device.

Although one embodiment of the present invention has been described above, the present invention can be embodied in other forms.
For example, in the above embodiment, the processing liquid supply nozzle 37
Although the example in which the tip of 0 is formed in the shape of a pencil has been described, other forms such as those shown in FIGS. 4 (a), 4 (b) and 4 (c) can be adopted. In FIG. 4A, the tip of the processing liquid supply nozzle 370 has an inverted mortar-shaped tapered surface 30. In other words, the tapered surface 30 is configured such that each end of the holding tube member 371 and the processing solution tube 378
It is formed by forming it into a tapered shape that goes from the outside to the inside of the tube wall as it goes downward.

In FIG. 4B, the processing liquid supply nozzle 3
At the tip of 70, the outer tapered surface 21 and the inner tapered surface 23 meet at the lower end to form a ridge 22. The lower end of the processing liquid tube 378 is formed in an inverted mortar-shaped tapered shape. Further, in FIG. 4C, the holding tube member 371 has a pencil-shaped outer tapered surface 24 at the lower end, and the processing liquid tube 378 has an inverted mortar-shaped tapered surface 25 at the lower end.

The processing liquid nozzle 370 does not need to have a double cylinder structure. For example, the distal end of the processing solution tube is attached to the holding tube member 37 by the processing solution tube attaching portion 374.
Alternatively, a processing liquid nozzle having a single-tube structure may be configured to be fixed to the upper end of the first processing liquid and guide the processing liquid by the holding pipe member 371.
In the above embodiment, while the etching liquid or pure water is supplied to the wafer W, the nitrogen gas flows through the through-hole 25.
9 is supplied to the limited space between the wafer W and the shielding plate 250, but the nitrogen gas may not be supplied in particular, and the wafer W and the shielding Nitrogen gas may be supplied to a limited space between the plate 250 and the space.

Further, in the above embodiment, the case where the processing of the wafer W is performed to manufacture the semiconductor device has been described. However, the present invention relates to a liquid crystal display device, a plasma display device, an optical disk, a magnetic disk, and a magneto-optical disk. For example, the present invention can be applied to the case of processing a substrate corresponding to such a device product in order to manufacture another type of device product. In addition, various design changes can be made within the scope of the matters described in the claims.

[Brief description of the drawings]

FIG. 1 is an illustrative sectional view for explaining the overall configuration of a substrate processing apparatus according to an embodiment of the present invention.

FIG. 2 is a cross-sectional view showing a configuration near a shielding plate.

FIG. 3 is an enlarged cross-sectional view showing a configuration near a tip of a processing liquid nozzle.

FIG. 4 is a cross-sectional view illustrating another example of a processing liquid nozzle.

FIG. 5 is a diagram showing a conventional configuration example near a discharge port of a processing liquid nozzle provided through the center of a shielding plate.

[Explanation of symbols]

 11, 12 tapered surface 13, 14 straight pipe portion 15, 16 boundary portion 20 opening peripheral edge 21 outer tapered surface 22 ridgeline 23 inner tapered surface 24 outer tapered surface 25 tapered surface 30 tapered surface 221 peripheral edge holding chuck 250 shielding plate 259 through hole 365 Nitrogen gas supply pipe 366 Nitrogen gas supply valve 370 Processing liquid nozzle 370 Processing liquid supply nozzle 371 Holding pipe member 378 Processing liquid tube 378a Discharge port 379 Pure water supply valve 380 Etching liquid supply valve 381 Gas passage W Wafer

Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat II (reference) G02F 1/13 101 G02F 1/13 101 1/1333 500 1/1333 500 H01J 9/38 H01J 9/38 A H01L 21 / 306 H01L 21/306 J (72) Inventor Mitsuhiro Nishizaki 6-7-35 Kita-Shinagawa, Shinagawa-ku, Tokyo Inside Sony Corporation (72) Inventor Tsutomu Osaka 7-35-35 Kita-Shinagawa, Shinagawa-ku, Tokyo Soni -Inside Co., Ltd. (72) Inventor Jin Abe 6-7-35 Kita-Shinagawa, Shinagawa-ku, Tokyo (72) Inventor Shin Uchida 4-chome, Horikawa-dori Teranouchi, Kamigyo-ku, Kyoto-shi, Kyoto Prefecture F-term in Daiichi Screen-Manufacturing Co., Ltd. (Reference) 2H088 FA18 FA21 FA30 HA01 MA20 2H090 HC18 JB02 JB03 JB04 JC19 3B201 AA02 AA03 AB01 AB34 BB92 BB93 CC01 CC13 5C012 BD05 5F043 EE07 EE08 EE27

Claims (9)

[Claims] 1. A substrate processing apparatus for processing a substrate by supplying a processing liquid to an upper surface of the substrate, comprising: a facing member provided to face the upper surface of the substrate and having a through hole; And a processing liquid supply pipe for supplying a processing liquid to an upper surface of the substrate from a discharge port formed at a sharp tip having substantially no horizontal surface. 2. The processing liquid supply pipe according to claim 1, wherein the processing liquid supply pipe has a tapered portion in which the thickness of the pipe wall gradually decreases toward the tip, and the thickness of the pipe wall becomes substantially zero at the tip. The substrate processing apparatus according to claim 1, wherein 3. The substrate processing apparatus according to claim 2, wherein a boundary portion between the tapered portion and a straight pipe portion connected to the tapered portion is chamfered in the processing liquid supply pipe. 4. The semiconductor device according to claim 1, wherein a peripheral edge of the opening facing the upper surface of the substrate is chamfered in the through hole.
4. The substrate processing apparatus according to any one of claims 1 to 3. 5. The apparatus according to claim 1, further comprising an inert gas supply means for introducing an inert gas between said opposed member and said substrate via said through hole. Substrate processing equipment. 6. A substrate processing method, wherein a substrate is processed using the substrate processing apparatus according to claim 1. 7. A processing liquid supply step of supplying a processing liquid to the substrate by the processing liquid supply pipe, and simultaneously with the processing liquid supply step, the inert gas is supplied to the substrate through the through hole by the inert gas supply means. 7. The substrate processing method according to claim 6, further comprising: an inert gas supply step of supplying the substrate; and a substrate drying step of drying the substrate after the processing liquid supply step and the inert gas supply step. 8. A method for manufacturing a device product, comprising a step of processing a substrate for a device product using the substrate processing apparatus according to any one of claims 1 to 5. 9. A processing liquid supply step of supplying a processing liquid to a substrate for a device product by the processing liquid supply pipe, and simultaneously with the processing liquid supply step, the inert gas supply means passes through the through hole. An inert gas supply step of supplying an inert gas to a device product substrate; and a substrate drying step of drying the device product substrate after the processing liquid supply step and the inert gas supply step. The method for manufacturing a device product according to claim 8, wherein: