JP2018046136A5 - - Google Patents

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Publication number
JP2018046136A5
JP2018046136A5 JP2016179331A JP2016179331A JP2018046136A5 JP 2018046136 A5 JP2018046136 A5 JP 2018046136A5 JP 2016179331 A JP2016179331 A JP 2016179331A JP 2016179331 A JP2016179331 A JP 2016179331A JP 2018046136 A5 JP2018046136 A5 JP 2018046136A5
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JP
Japan
Prior art keywords
semiconductor region
region
epitaxial layer
bsr
layer epi
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JP2016179331A
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English (en)
Japanese (ja)
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JP2018046136A (ja
JP6705726B2 (ja
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Priority to JP2016179331A priority Critical patent/JP6705726B2/ja
Priority claimed from JP2016179331A external-priority patent/JP6705726B2/ja
Priority to US15/635,441 priority patent/US10229903B2/en
Priority to CN201710784798.7A priority patent/CN107818976B/zh
Publication of JP2018046136A publication Critical patent/JP2018046136A/ja
Publication of JP2018046136A5 publication Critical patent/JP2018046136A5/ja
Application granted granted Critical
Publication of JP6705726B2 publication Critical patent/JP6705726B2/ja
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JP2016179331A 2016-09-14 2016-09-14 半導体装置 Active JP6705726B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2016179331A JP6705726B2 (ja) 2016-09-14 2016-09-14 半導体装置
US15/635,441 US10229903B2 (en) 2016-09-14 2017-06-28 Semiconductor device with a resistance element and an electrostatic protection element
CN201710784798.7A CN107818976B (zh) 2016-09-14 2017-09-04 半导体器件

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016179331A JP6705726B2 (ja) 2016-09-14 2016-09-14 半導体装置

Publications (3)

Publication Number Publication Date
JP2018046136A JP2018046136A (ja) 2018-03-22
JP2018046136A5 true JP2018046136A5 (fr) 2019-04-04
JP6705726B2 JP6705726B2 (ja) 2020-06-03

Family

ID=61560784

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016179331A Active JP6705726B2 (ja) 2016-09-14 2016-09-14 半導体装置

Country Status (3)

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US (1) US10229903B2 (fr)
JP (1) JP6705726B2 (fr)
CN (1) CN107818976B (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109887912B (zh) * 2019-03-06 2021-07-13 西安微电子技术研究所 一种面向冷备份系统双极型集成电路应用的静电保护电路
JP7086018B2 (ja) 2019-03-12 2022-06-17 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0109996B1 (fr) * 1982-11-26 1987-06-03 International Business Machines Corporation Structure de résistance autopolarisée et application à la réalisation de circuits d'interface
GB2204445B (en) * 1987-03-06 1991-04-24 Texas Instruments Ltd Semiconductor switch
EP0429686B1 (fr) * 1989-10-30 1994-12-28 Siemens Aktiengesellschaft Structure de protection d'entrée pour circuits intégrés
US5521783A (en) * 1993-09-17 1996-05-28 Analog Devices, Inc. Electrostatic discharge protection circuit
JPH07211510A (ja) * 1994-01-27 1995-08-11 Nippondenso Co Ltd 半導体装置
JPH1079472A (ja) * 1996-09-05 1998-03-24 Mitsubishi Electric Corp 半導体集積回路
JP4067346B2 (ja) * 2002-06-25 2008-03-26 三洋電機株式会社 半導体集積回路装置
JP3760945B2 (ja) * 2004-04-01 2006-03-29 セイコーエプソン株式会社 半導体装置及びその製造方法
US20070173026A1 (en) * 2006-01-23 2007-07-26 Bcd Semiconductor Manufacturing Limited Method for fabricating bipolar integrated circuits
JP4209432B2 (ja) * 2006-06-12 2009-01-14 Ｎｅｃエレクトロニクス株式会社 静電破壊保護装置
JP5749616B2 (ja) * 2011-09-27 2015-07-15 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 半導体装置

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