JP2018041808A - Warp correction material for fan-out type wafer level package - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a warp correction material for FO-WLP capable of reducing warpage of a wafer or a package by adjusting an amount of warpage even at a time of mounting a fan-out type wafer level package (FO-WLP) even at room temperature such as wafer transfer.SOLUTION: A volume shrinks due to irradiation with active energy rays. Further the volume shrinks due to heating after irradiation with the active energy ray. Thereby, a fan-out type wafer level package warp correction material is formed.SELECTED DRAWING: None

Description

  The present invention relates to a warp correction material for a fan-out type wafer level package. More specifically, the present invention relates to a fan-out type wafer level package in which a region where an external connection electrode is arranged is larger than a planar size of a semiconductor. The present invention relates to a material for forming a warp correction layer provided on a surface opposite to a wiring layer.

  In recent years, there has been an increasing demand for miniaturization in the field of semiconductor circuits and the like, and in order to meet such demands, semiconductor circuits are sometimes mounted in a package (Chip Size Package) close to the chip size. As one means for realizing a chip size package, a package method called a wafer level package (hereinafter sometimes abbreviated as WLP) that is bonded and fragmented at a wafer level has been proposed. WLP is attracting attention because it can contribute to cost reduction and size reduction. The WLP is mounted face down on a circuit board on which electrodes are formed.

  By the way, with the miniaturization and high integration of the semiconductor chip, the number of electrodes (terminals and bumps) for external connection of the semiconductor chip tends to increase. Therefore, the pitch of the electrodes for external connection of the semiconductor chip is small. Tend to be. However, it is not always easy to directly mount a semiconductor chip on which bumps are formed at a fine pitch on a circuit board.

  In order to solve the above problems, a semiconductor encapsulant region is formed on the outer periphery of the semiconductor chip, and a rewiring layer connected to the electrode is also provided in the semiconductor encapsulant region, so that the bump pitch is reduced. It has been proposed to be larger. Such a WLP is called a fan-out type wafer level package (hereinafter sometimes abbreviated as FO-WLP) because the size of the bump arrangement area is larger than the size of the semiconductor chip.

  In FO-WLP, a semiconductor chip is embedded with a semiconductor sealing material. The circuit surface of the semiconductor chip is exposed to the outside, and a boundary between the semiconductor chip and the semiconductor sealing material is formed. A rewiring layer connected to the electrode of the semiconductor chip is also provided in the region of the semiconductor sealing material for embedding the semiconductor chip, and the bump is electrically connected to the electrode of the semiconductor chip through the rewiring layer. The pitch of the bumps can be set larger than the pitch of the electrodes of the semiconductor chip.

  It is also conceivable that not only a semiconductor chip but also a plurality of electronic components are housed in one package, or a plurality of semiconductor chips are embedded in a semiconductor sealing material to form one semiconductor component. In such a package, a plurality of electronic components are embedded with a semiconductor sealing material. The semiconductor sealing material for embedding a plurality of electronic components is provided with a rewiring layer connected to the electrodes of the electronic components, and the bumps are electrically connected to the electrodes of the electronic components via the rewiring layers. Also in this case, since the size of the bump arrangement area is larger than the size of the semiconductor chip, it can be said to be FO-WLP.

  In such a package, in general, a semiconductor chip or an electronic component is arranged at a certain interval on a support, embedded with a semiconductor sealing material, and the sealing material is heat-cured, and then the support. A pseudo wafer is produced by peeling from the substrate. Subsequently, a rewiring layer is formed from the semiconductor chip circuit surface of the pseudo wafer to the expanded semiconductor sealing material region. In this way, the pitch of the bumps can be set larger than the pitch of the electrodes of the semiconductor chip.

  In the formation of the rewiring layer, generally, a positive sensitive resin is applied to the semiconductor chip circuit surface of the pseudo wafer, prebaked, and activated with UV light or the like in an area to be opened through a photomask or the like. Irradiate light, then develop using a developer such as TMAH (tetramethylammonium hydroxide), heat cure, oxygen plasma treatment, etc., metal electrode sputtering, and further form a photoresist layer The wiring is patterned to form a rewiring layer (for example, Patent Document 1).

  In WLP or FO-WLP, when a rewiring layer is formed on the semiconductor chip circuit surface, the circuit surface (that is, the surface on which the insulating film is formed) is mainly due to shrinkage during curing of the insulating film such as photosensitive polyimide between the wirings. Warping deformation that becomes concave occurs. In order to reduce the amount of warping, a resin layer is formed on one surface of a substrate made of a wafer-like semiconductor, and the resin layer is cured after being held so that the entire area of the resin layer bulges into a spherical shape. Has been proposed (for example, Patent Document 2).

JP 2013-38270 A JP 2012-178422 A

  However, as described above, even if the WLP having the rewiring layer provided only on one side is heated to suppress the amount of warpage, the rewiring layer expands when heated to the WLP mounting temperature (for example, 260 ° C.). As a result, the package warps. As a result, there is a problem that peeling occurs between layers inside the package, or some terminals are difficult to connect during mounting. On the other hand, in order to suppress the warpage of the package at the time of mounting the WLP, if the amount of warpage is adjusted to be suppressed at the mounting temperature of the WLP, the rewiring layer including the insulating film contracts when the package is cooled to room temperature. As a result, the wafer is warped. As a result, there is a problem that it becomes difficult to carry the wafer, and the risk that the wafer is stressed and cracked by a minute impact increases.

  Accordingly, an object of the present invention is to adjust the amount of warpage of a wafer or a package by adjusting the amount of warpage at a temperature at the time of mounting a semiconductor wafer or a semiconductor package, particularly a fan-out type wafer level package (FO-WLP) or at a room temperature such as wafer transfer. It is providing the curvature correction material for FO-WLP which can reduce curvature.

  In order to solve the above problems, it can be said that the amount of warpage is desirably suppressed both at the temperature when the semiconductor package is mounted and at the room temperature such as wafer transfer. The present inventors have found that the above-mentioned problems can be solved by using a warp correction material that shrinks in volume by irradiation with active energy rays and further shrinks in volume after heating after irradiation with active energy rays. It was also found that the warp correction layer can be further corrected by forming a warp correction layer having a shrinkage force against the stress contracted by the insulating film cure of the rewiring layer on the opposite surface of the wafer where the rewiring layer is formed. It was. Furthermore, the present inventors have various thicknesses of semiconductor wafers and FO-WLP pseudo-wafers, and various thicknesses and patterns of rewiring layers including insulating films can be adjusted for the respective warpage amounts. It was found that it is effective to provide a highly versatile warp correction layer on the surface opposite to the surface on which the rewiring layer including the insulating film is formed. Further, by forming a warp correction layer using a warp correction material having the following volume shrinkage characteristics, it has been found that the warpage of the wafer or package can be reduced while adjusting the warpage amount of the wafer or package. It was.

  The warpage correction material according to the present invention is a fan-out type warpage correction material for a wafer level package that shrinks in volume when irradiated with active energy rays and further shrinks in volume after heating after irradiation with the active energy rays.

  The warp correction material according to the present invention preferably contains a curable component whose volume shrinks when irradiated with active energy rays and a curable component whose volume shrinks when heated.

The warpage correction material according to the present invention is expressed by the following formula (1) when the volumetric shrinkage ratio by heating is α _H (%):
0 <α _H ≦ 5 (1)
It is preferable to satisfy.

In addition, the warp correction material according to the present invention is expressed by the following formula (2), where α _I (%) is a volume contraction rate by irradiation with active energy rays:
2 ≦ α _I ≦ 20 (2)
It is preferable to satisfy.

In addition, the warp correction material according to the present invention has a volume shrinkage ratio due to the heating and a volume shrinkage ratio due to irradiation with active energy rays, which is expressed by the following formula (3):
α _H <α _I (3)
It is preferable to satisfy.

  Moreover, it is preferable that the warp correction material according to the present invention is provided on the surface opposite to the surface on which the rewiring layer of the fan-out type wafer level package is provided, and the warpage can be corrected by contraction.

  According to the present invention, a warp correction material that shrinks in volume by irradiation with active energy rays and further shrinks in volume after heating after irradiation with active energy rays, particularly a curable component that shrinks in volume by irradiation with active energy rays. And applying a warp correction material containing a curable component whose volume shrinks by heating to a surface opposite to the surface on which the FO-WLP rewiring layer is provided, thereby forming a warp correction layer, The amount of warpage can be suppressed at both the temperature when the semiconductor package is mounted and the room temperature such as wafer transfer, and the warpage of the wafer or package can be reduced while adjusting the amount of warpage of the wafer or package. As a result, a semiconductor package with high quality and reliability can be obtained.

  The warpage correction material for FO-WLP according to the present invention shrinks in volume by irradiation with active energy rays, and further shrinks in volume by heating after irradiation with active energy rays. Using such a warp correction material, a warp correction layer is formed on the surface opposite to the surface on which the FO-WLP rewiring layer is provided, and a contraction stress similar to that of the rewiring layer acts. Thus, by adjusting the volume shrinkage rate of the warp correction layer, the amount of warpage can be suppressed at both the temperature when the semiconductor package is mounted and the room temperature such as wafer transfer. That is, during the manufacture of FO-WLP, an insulating layer is provided along with the rewiring layer on the circuit formation surface of the pseudo wafer, but the amount of warpage of the pseudo wafer also varies depending on the material, thickness, and pattern of the insulating film. As in the invention, the warp straightening material whose volume shrinks by irradiation with active energy rays and further shrinks by heating after the irradiation of active energy rays adjusts the order and degree of active energy ray irradiation and heating. By doing so, since the volumetric shrinkage rate of the warp correction material can be controlled, the warp correction layer can generate a contraction stress equivalent to the stress acting on the FO-WLP. Therefore, the amount of warpage can be suppressed both at the temperature when mounting the semiconductor package and at room temperature such as wafer transport, and the warpage of the wafer or package can be reduced while adjusting the amount of warpage of the wafer or package. It is considered that a package can be obtained. This is only a guess of the present inventors, and the present invention is not bound to the logic. Hereinafter, each component which comprises the curvature correction material by this invention is demonstrated.

  The warp straightening material for FO-WLP according to the present invention preferably contains a curable component whose volume shrinks when irradiated with active energy rays and a curable component whose volume shrinks when heated. By including such two components, the volume shrinkage rate of the warp correction material can be controlled by adjusting the order and extent of irradiation with active energy rays and heating as described above.

<Curable component (A1) whose volume shrinks by heating>
As the curable component (A1) whose volume is shrunk by heating, a conventionally known material can be used without particular limitation as long as it has a curability whose volume shrinks by a curing reaction by heating. It is preferably an ionic ring-opening polymerization reaction or polyaddition polymerization-reactive curing component. In the present specification, ionic ring-opening polymerization means polymerization in which a growing chain is an ion when a polymerization reaction is advanced using a monomer that is polymerized by ring-opening. The polyaddition reaction is an addition reaction between a monomer having two or more functional groups having a cyclic structure and a monomer having a functional group capable of reacting with a functional group having the cyclic structure at both ends. It means a reaction in which the polymerization proceeds while repeating. As such an ionic ring-opening polymerization reaction or polyaddition polymerization-reactive curing component, cyclic ethers such as epoxy and oxetane are preferable, and among them, an epoxy resin is preferably used. Epoxy resins include solid, semi-solid, and liquid epoxy resins from the pre-reaction shape. These can be used individually by 1 type or in combination of 2 or more types. By containing such a cyclic ether as a curable component (A1) whose volume shrinks by heating, as described later, when the curable component (A1) whose volume shrinks by heating is cured, Adhesion is improved and warping of FO-WLP can be further suppressed.

  As the solid epoxy resin, HP-4700 (naphthalene type epoxy resin) manufactured by DIC, EXA4700 (tetrafunctional naphthalene type epoxy resin) manufactured by DIC, NC-7000 (polyfunctional solid epoxy resin containing naphthalene skeleton) manufactured by Nippon Kayaku Co., Ltd. Naphthalene-type epoxy resins such as EPPN-502H (trisphenol epoxy resin) manufactured by Nippon Kayaku Co., Ltd. Epoxidized products (trisphenol-type epoxy resins) of condensation products of phenols and aromatic aldehydes having a phenolic hydroxyl group; Dicyclopentadiene aralkyl epoxy resin such as Epiklon HP-7200H (dicyclopentadiene skeleton-containing polyfunctional solid epoxy resin) manufactured by Nippon Kayaku Co., Ltd .; biphenyl aralkyl such as NC-3000H (biphenyl skeleton-containing polyfunctional solid epoxy resin) manufactured by Nippon Kayaku Co., Ltd. Type Epoxy Resin; biphenyl / phenol novolak type epoxy resin such as NC-3000L manufactured by Nippon Kayaku; novolak type epoxy resin such as Epicron N660 and Epicron N690 manufactured by DIC, EOCN-104S manufactured by Nippon Kayaku; YX- manufactured by Mitsubishi Chemical Corporation Biphenyl type epoxy resin such as 4000; Phosphorus-containing epoxy resin such as TX0712 manufactured by Nippon Steel & Sumikin Chemical Co .; Tris (2,3-epoxypropyl) isocyanurate such as TEPIC manufactured by Nissan Chemical Industries, Ltd.

  As semi-solid epoxy resin, DIC Corporation Epicron 860, Epicron 900-IM, Epicron EXA-4816, Epicron EXA-4822, Asahi Ciba Araldite AER280, Toto Kasei Epoto YD-134, Mitsubishi Chemical Corporation jER834, jER872, bisphenol A type epoxy resin such as ELA-134 manufactured by Sumitomo Chemical Co., Ltd .; naphthalene type epoxy resin such as Epicron HP-4032 manufactured by DIC; phenol novolac type epoxy resin such as Epicron N-740 manufactured by DIC .

  Liquid epoxy resins include bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol AF type epoxy resin, phenol novolac type epoxy resin, tert-butyl-catechol type epoxy resin, glycidylamine type epoxy resin, aminophenol type epoxy resin And alicyclic epoxy resins.

  Furthermore, a photocurable thermosetting component (AB) can also be used as the curable component whose volume shrinks. Such a photocurable thermosetting component (AB) is one having a cyclic ether in the molecule and one or more ethylenically unsaturated groups in the molecule described later. A compound having one or more ethylenically unsaturated groups in the molecule described later and a cyclic ether in the molecule can also be used. Examples of such compounds include glycidyl (meth) acrylate, 4-hydroxybutyl acrylate glycidyl ether, trimethylolpropane diacrylate monoglycidyl ether, 3,4-epoxycyclohexylmethyl (meth) acrylate, and the like. These compounds are preferable because, as will be described later, volume shrinkage is caused by irradiation with active energy rays, and volume shrinkage is also caused by heating, so that the warpage of FO-WLP can be effectively corrected by shrinkage.

  The above-mentioned curable component (A1) whose volume shrinks by heating can be used singly or in combination of two or more.

  The warp straightening material for FO-WLP according to the present invention preferably contains a curing agent component (A2) capable of curing the curable component (A1) whose volume shrinks by heating. As the curing agent component (A2), a curing agent component (A2-1) capable of causing the curable component (A1) to undergo ionic ring-opening polymerization or polyaddition polymerization reaction with heat can be suitably used.

  As the curing agent component (A2-1) capable of ionic ring-opening polymerization of the curable component (A1) whose volume shrinks by heating, imidazoles, benzylsulfonium salts, Lewis acid-amine complexes, and the like can be used. . Among them, it is desirable to use imidazoles from the viewpoints of adhesion to the pseudo wafer, storage stability, moisture resistance reliability, and the like.

  Examples of imidazoles include 2MZ, C11Z, 2PZ, 2E4MZ, 2P4MZ, 1B2MZ, 1B2PZ, 2MZ-CN, 2E4MZ-CN, 2PZ-CN, C11Z-CN, 2PZ-CNS, C11Z-CNS, 2MZ-A, and C11Z. Examples thereof include -A, 2E4MZ-A, 2P4MHZ, 2PHZ, 2MA-OK, 2PZ-OK (manufactured by Shikoku Kasei Kogyo Co., Ltd., product name), and compounds obtained by adding these imidazoles to an epoxy resin. In addition, those encapsulating these curing agents with a polyurethane-based or polyester-based polymer substance and making them into microcapsules are preferable because the pot life is extended. These may be used alone or in admixture of two or more.

  As a compounding quantity of imidazoles, it is preferable to mix | blend 0.1-10 mass% with respect to the sclerosing | hardenable component (A1) which a volume shrinks by heating, More preferably, it is 0.5-10 mass%, More preferably 1 to 10% by mass. By blending imidazoles, which are curing agent components (A2-1) that can be subjected to ionic ring-opening polymerization, in the above range, both curability and storage stability can be achieved.

  The benzylsulfonium salts are Sanshin Chemical Sun Aid series, SI-45, SI-60, SI-80, SI-100, SI-150, SI-110, SI-360, SI-360, SI-B2A, SI-B3A, SI-B3, SI-B4, and SI-B5 can be used. These may be used alone or in admixture of two or more.

  The blending amount of the benzylsulfonium salt is preferably 0.1 to 10% by weight, more preferably 0.5 to 10% by weight, and still more preferably, based on the curable component (A1) whose volume shrinks by heating. Is 1-10 mass%. By blending the benzylsulfonium salt, which is a curing agent component (A2-1) that can be subjected to ionic ring-opening polymerization, in the above range, both curability and storage stability can be achieved.

  Moreover, as a Lewis acid-amine complex, well-known things, such as a BF3-triethylamine complex and a BF3-pyridine complex, can be used.

  As a compounding quantity of hardening | curing agent components (A2-1), such as a Lewis' acid-amine complex, it is preferable to mix | blend 0.1-10 mass% with respect to the sclerosing | hardenable component (A1) in which a volume shrinks by heating, and more. Preferably it is 0.5-10 mass%, More preferably, it is 1-10 mass%. Curing and storage stability can be made compatible by blending in the above-mentioned range such as Lewis acid-amine complex which is a curing agent component (A2-1) capable of ionic ring-opening polymerization.

  The curable component (A1) whose volume shrinks by heating may be cured by a polyaddition polymerization reaction. Examples of the curing agent component (A2-1) capable of causing the polyaddition polymerization reaction of the curable component (A1) whose volume is contracted by heating include acid anhydrides, carboxylic acids, amines, phenols, hydrazides, and polymercaptan. Etc. can be used. Among them, it is desirable to use carboxylic acids, amines, and phenols from the viewpoints of adhesion to the pseudo wafer, storage stability, moisture resistance reliability, and the like.

  Examples of acid anhydrides include methyltetrahydrophthalic anhydride, methylhexahydrophthalic anhydride, hexahydrophthalic anhydride, methylheimic anhydride, pyromellitic dianhydride, benzophenonetetracarboxylic acid Anhydride, 3,4-dimethyl-6- (2-methyl-1-propenyl) -1,2,3,6-tetrahydrophthalic anhydride, 1-isopropyl-4-methyl-bicyclo [2.2.2 Oct-5-ene-2,3-dicarboxylic anhydride and the like can be used. These may be used alone or in admixture of two or more.

  For example, when the curable component (A1) whose volume is shrunk by heating is an epoxy compound, the amount of the acid anhydride is the number of curable functional groups (epoxy groups) and the number of carboxylic acids generated from the acid anhydride groups. It is preferable that the ratio (number of curable functional groups of the curable component (A1) whose volume shrinks by heating / number of carboxylic acids) is 0.2 to 20, more preferably 0.4 to 16. It is. By setting the blending amount of the acid anhydride in the above range, the curing reaction can be effectively advanced. On the other hand, when the curable component (A1) whose volume shrinks by heating is other than an epoxy group, the ratio of the number of curing functional groups involved in the curing reaction to the number of carboxylic acids generated from the acid anhydride group (volume by heating) Can be calculated in the same manner from the number of curable functional groups of the curable component (A1) that contracts by the number of carboxylic acids.

  Carboxylic acids include adipic acid, maleic acid, methyl tetrahydrophthalic acid, methyl hexahydrophthalic acid, hexahydrophthalic acid, methyl hymic acid, pyromellitic acid, benzophenone tetracarboxylic acid, 3,4-dimethyl-6- (2 -Methyl-1-propenyl) -1,2,3,6-tetrahydrophthalic acid, 1-isopropyl-4-methyl-bicyclo [2.2.2] oct-5-ene-2,3-dicarboxylic acid, side A resin having a carboxyl group in the chain can be used.

  When the curable component (A1) whose volume shrinks by heating is an epoxy compound, the ratio of the number of curing functional groups (epoxy groups) to the number of carboxyl groups (curing whose volume shrinks by heating) It is preferable to mix | blend so that it may become 0.2-20 in the number of the functional component (A1) hardening functional group / number of carboxyl groups, More preferably, it is 0.4-16. By setting the blending amount of the carboxylic acid within the above range, the curing reaction can be effectively advanced. On the other hand, when the curable component (A1) whose volume shrinks by heating is other than an epoxy group, the ratio of the number of curing functional groups and the number of carboxyl groups involved in the curing reaction (the curable component (volume that shrinks by heating ( It can be calculated in the same manner from the number of functional groups A1) / the number of carboxyl groups).

  The amine is not particularly limited as long as it is a compound having at least one primary or secondary amino group in the molecule. From the viewpoint of storage stability and heat resistance of the cured product, aromatic amines may be used. desirable. Examples of aromatic amines include diaminodiphenylmethane, diaminodiphenylsulfone, diaminodiphenyl sulfide, metaxylenediamine, 3,3′-diethyl-4,4′-diaminodiphenylmethane, 3,3 ′, 5,5′-tetraethyl. -4,4'-diaminodiphenylmethane, 4,4'-diaminodiphenyl sulfone, 4,4'-diaminodiphenyl sulfide, 2,2-bis- [4- (4-aminophenoxy) phenyl] -hexafluoropropane, 2 , 2-bis (4-aminophenyl) -hexafluoropropane, 2,4-diaminotoluene, 1,4-diaminobenzene, 1,3-diaminobenzene, diethyltoluenediamine, dimethyltoluenediamine, anilines, alkylated anilines N-alkylated anilis S, or the like can be used. These may be used alone or in admixture of two or more.

  When the curable component (A1) whose volume shrinks by heating is an epoxy compound, the ratio of the number of functional groups (epoxy groups) to the number of active hydrogens (number of epoxy groups / active hydrogen) It is desirable to mix | blend so that it may become 0.2-20, More preferably, it is 0.4-16. By setting the compounding amount of amines within the above range, the curing reaction can be effectively advanced. On the other hand, when the curable component (A1) whose volume shrinks by heating is other than an epoxy group, the ratio of the number of curing functional groups involved in the curing reaction to the number of active hydrogens (the curing functional group of the curable component (A1)). Number / number of active hydrogens).

  Examples of phenols include phenol novolac resins, alkylphenol volac resins, bisphenol A novolac resins, dicyclopentadiene type phenol resins, Xylok type phenol resins, terpene modified phenol resins, cresol / naphthol resins, polyvinyl phenols, phenol / naphthol resins, An α-naphthol skeleton-containing phenol resin, a triazine-containing cresol novolac resin, various polyfunctional phenol resins, and the like can be used. These can be used alone or as a mixture of two or more.

  When the curable component (A1) whose volume shrinks by heating is an epoxy compound, the ratio of the number of cured functional groups (epoxy groups) to the number of phenolic hydroxyl groups (number of epoxy groups / phenol) It is desirable to mix | blend so that it may become 0.2-20, and, more preferably, it is 0.4-16. By making the compounding quantity of phenol into the said range, hardening reaction can be advanced effectively. On the other hand, when the curable component (A1) whose volume shrinks by heating is other than an epoxy group, the ratio of the number of curing functional groups involved in the curing reaction to the number of phenolic hydroxyl groups (the curable component whose volume shrinks by heating) It can be calculated in the same manner from the number of (A1) cured functional groups / number of phenolic hydroxyl groups.

  In addition to the above, as the curing agent component (A2-1) capable of polymerizing the curable component (A1) whose volume is contracted by heating by a polymerization reaction of polyaddition, a cyanate ester resin or an active ester resin may be used. it can. The cyanate ester resin is a compound having two or more cyanate ester groups (—OCN) in one molecule. Any conventionally known cyanate ester resins can be used. Examples of the cyanate ester resin include phenol novolac type cyanate ester resin, alkylphenol novolak type cyanate ester resin, dicyclopentadiene type cyanate ester resin, bisphenol A type cyanate ester resin, bisphenol F type cyanate ester resin, and bisphenol S type cyanate ester resin. Is mentioned. Further, it may be a prepolymer partially triazine.

  The active ester resin is a resin having two or more active ester groups in one molecule. The active ester resin can generally be obtained by a condensation reaction between a carboxylic acid compound and a hydroxy compound. Among these, an active ester compound obtained by using a phenol compound or a naphthol compound as the hydroxy compound is preferable. Examples of phenol compounds or naphthol compounds include hydroquinone, resorcin, bisphenol A, bisphenol F, bisphenol S, phenolphthaline, methylated bisphenol A, methylated bisphenol F, methylated bisphenol S, phenol, o-cresol, m-cresol, p-cresol, catechol, α-naphthol, β-naphthol, 1,5-dihydroxynaphthalene, 1,6-dihydroxynaphthalene, 2,6-dihydroxynaphthalene, dihydroxybenzophenone, trihydroxybenzophenone, tetrahydroxybenzophenone, phloroglucin, benzenetriol , Dicyclopentadienyl diphenol, phenol novolac and the like.

  Curing agent component (A2) capable of polymerizing carboxylic acid, acid anhydrides, amines, phenols, cyanate ester resin and active ester resin by a polyaddition polymerization reaction of curable component (A1) whose volume shrinks by heating. When used as -1), a curing accelerator may be used in combination. As the curing accelerator, the imidazoles can be used. Further, guanamines such as acetoguanamine and benzoguanamine; organic acid salts of polyamines such as diaminodiphenylmethane, m-phenylenediamine, m-xylenediamine, diaminodiphenylsulfone, dicyandiamide, urea, urea derivatives, melamine, polybasic hydrazide and / or Or epoxy adducts; amine complexes of boron trifluoride; triazine derivatives such as ethyldiamino-S-triazine, 2,4-diamino-S-triazine, 2,4-diamino-6-xylyl-S-triazine; tributylphosphine , Organic phosphines such as triphenylphosphine and tris-2-cyanoethylphosphine; tri-n-butyl (2,5-dihydroxyphenyl) phosphonium bromide, hexadecyltributylphosphonium chloride, etc. Phosphonium salts; benzyl trimethyl ammonium chloride, quaternary ammonium salts such as phenyl tributylammonium chloride; the polybasic acid anhydride. These 1 type can be used individually or in mixture of 2 or more types.

  Although a curing accelerator component is not essential, particularly when it is desired to accelerate a curing reaction, a curing agent component (A2-1) capable of polymerizing a curable component (A1) whose volume shrinks by heating by a polymerization reaction of polyaddition. It can use in the range of 0.01-20 mass parts preferably with respect to 100 mass parts. When using a metal catalyst as a hardening accelerator component, the content is preferably 10 to 550 ppm in terms of metal with respect to 100 parts by mass of the curable component, and preferably 25 to 200 ppm.

<Curable component (B1) whose volume shrinks upon irradiation with active energy rays>
The warpage straightening material for FO-WLP according to the present invention has a different curing reaction from the curable component (A1) whose volume shrinks by heating, that is, the curable component (B1) whose volume shrinks when irradiated with active energy rays. It is preferable to contain. In this specification, the active energy ray means an electromagnetic wave having energy necessary for the curing agent component to be excited from the ground state to the transition state, and means, for example, an electron beam, an ultraviolet ray, a visible ray or the like. As the curable component (B1) whose volume is shrunk by irradiation with active energy rays, a conventionally known material is used without particular limitation as long as it has curability whose volume shrinks by a curing reaction by irradiation with active energy rays. For example, a curable component (B1-1) that can be cured by a radical addition polymerization reaction can be preferably used. In the present specification, radical addition polymerization means a reaction in which polymerization is initiated by radicals and an unsaturated compound having a double bond or triple bond is added to form a polymer. As the curable component that can be cured by such radical addition polymerization reaction, a compound having one or more ethylenically unsaturated groups in the molecule is preferable.

  When the warpage correction material for FO-WLP contains a curable component whose volume shrinks by irradiation of active energy rays and a curable component whose volume shrinks by heating, when the warpage correction material is cured, The curable component (A1) whose volume is contracted by heating and the curable component (B1) whose volume is contracted by irradiation with active energy rays can be separately cured. Therefore, when the warpage correction layer of FO-WLP is formed using the warpage correction material, the individual curability depends on the amount of warpage of the pseudo wafer (that is, the stress acting on the FO-WLP due to the volume shrinkage of the insulating layer). The curing reaction of the components can be controlled, and a shrinkage stress comparable to the warping stress inherent in the pseudo wafer can be generated in the warp correction layer. As a result, FO-WLP with reduced warpage can be obtained even in the case of manufacturing FO-WLP having different materials, thicknesses, and patterns of insulating films.

  Specific examples of the radical addition polymerization reactive component having one or more ethylenically unsaturated groups in the molecule include conventionally known polyester (meth) acrylate, polyether (meth) acrylate, and urethane (meth). Examples thereof include acrylate, carbonate (meth) acrylate, and epoxy (meth) acrylate. Specifically, hydroxyalkyl acrylates such as 2-hydroxyethyl acrylate and 2-hydroxypropyl acrylate; diacrylates of glycols such as ethylene glycol, methoxytetraethylene glycol, polyethylene glycol, and propylene glycol; N, N-dimethylacrylamide Acrylamides such as N-methylol acrylamide and N, N-dimethylaminopropyl acrylamide; aminoalkyl acrylates such as N, N-dimethylaminoethyl acrylate and N, N-dimethylaminopropyl acrylate; hexanediol, trimethylolpropane, Polyhydric alcohols such as pentaerythritol, dipentaerythritol, tris-hydroxyethyl isocyanurate or the like Polyvalent acrylates such as idoid adducts, propylene oxide adducts, or ε-caprolactone adducts; phenoxy acrylates, bisphenol A diacrylates, and polyhydric acrylates such as ethylene oxide adducts or propylene oxide adducts of these phenols Polyglycerides of glycidyl ethers such as glycerin diglycidyl ether, glycerin triglycidyl ether, trimethylolpropane triglycidyl ether, triglycidyl isocyanurate; not limited to the above, polyether polyol, polycarbonate diol, hydroxyl-terminated polybutadiene, polyester Acrylates in which polyols such as polyols are directly acrylated or urethane acrylated via diisocyanate And at least any one of methacrylates corresponding to the acrylate. Maleimide can also be used.

In addition to the above, compounds such as the following (1) to (11) may be used as curable components that can be cured by radical addition polymerization reaction.
(1) A reaction product obtained by reacting a compound having a plurality of phenolic hydroxyl groups in one molecule with an alkylene oxide is reacted with an unsaturated group-containing monocarboxylic acid, and the resulting reaction product is converted to a polybasic acid. An unsaturated group-containing polymer obtained by reacting an anhydride,
(2) an acrylic-containing polymer obtained by reacting a bifunctional or higher polyfunctional epoxy resin with (meth) acrylic acid and adding a dibasic acid anhydride to a hydroxyl group present in the side chain;
(3) an acrylic-containing polymer in which (meth) acrylic acid is reacted with a polyfunctional epoxy resin obtained by epoxidizing the hydroxyl group of a bifunctional epoxy resin with epichlorohydrin, and a dibasic acid anhydride is added to the resulting hydroxyl group;
(4) A reaction product obtained by reacting a compound having a plurality of phenolic hydroxyl groups in one molecule with a cyclic carbonate compound is reacted with an unsaturated group-containing monocarboxylic acid, and the resulting reaction product is a polybasic acid. An unsaturated group-containing polymer obtained by reacting an anhydride,
(5) Acrylic-containing urethane resin by polyaddition reaction between diisocyanate and (meth) acrylate of bifunctional epoxy resin or its partial acid anhydride modified product, carboxyl group-containing dialcohol compound and diol compound,
(6) an unsaturated group-containing polymer obtained by copolymerization of an unsaturated carboxylic acid and an unsaturated group-containing compound,
(7) During the synthesis of a resin by polyaddition reaction of a diisocyanate, a carboxyl group-containing dialcohol compound and a diol compound, a compound having one hydroxyl group and one or more (meth) acryloyl groups in the molecule is added. (Meth) acrylated acrylic-containing urethane resin,
(8) During the synthesis of a resin by polyaddition reaction of a diisocyanate with a carboxyl group-containing dialcohol compound and a diol compound, a compound having one isocyanate group and one or more (meth) acryloyl groups in the molecule is added, Terminal (meth) acrylated acrylic-containing urethane resin,
(9) An acrylic-containing urethane resin obtained by adding a compound having one hydroxyl group and one or more (meth) acryloyl groups in the molecule during the synthesis of the resin of (5), and terminal (meth) acrylated,
(10) An acrylic-containing urethane resin obtained by adding a compound having one isocyanate group and one or more (meth) acryloyl groups in the molecule during the synthesis of the resin of (5) above, and terminally (meth) acrylated; 11) An acrylic-containing polymer obtained by adding a compound having one epoxy group and one or more (meth) acryloyl groups in one molecule to the resins (1) to (10) above,
Can be used alone or in combination of two or more, or in combination with a monomer having one or more ethylenically unsaturated groups in the molecule.

  Furthermore, a photocurable thermosetting component (AB) can also be used as the curable component (B1) whose volume shrinks when irradiated with active energy rays. The photocurable thermosetting component (AB) is a compound having at least one ethylenically unsaturated group and the aforementioned cyclic ether in the molecule. Examples of such compounds include glycidyl (meth) acrylate, 4-hydroxybutyl acrylate glycidyl ether, trimethylolpropane diacrylate monoglycidyl ether, 3,4-epoxycyclohexylmethyl (meth) acrylate, and the like. These compounds are preferable because, as will be described later, volume shrinkage is caused by irradiation with active energy rays, and volume shrinkage is also caused by heating, so that the warpage of FO-WLP can be effectively corrected by shrinkage.

  It is preferable that the curvature correction material for FO-WLP by this invention contains the hardening | curing agent component (B2) which can harden | cure the sclerosing | hardenable component (B1) which a volume shrinks by irradiation of an active energy ray. As the curing agent component (B2), a curable component (B2-1) capable of radical polymerization of the curable component (B1) with active energy rays is preferable.

  Examples of the curing agent component (B2-2) capable of polymerizing the curable component (B1) whose volume is contracted by irradiation with active energy rays by radical addition polymerization reaction include bis- (2,6-dichlorobenzoyl). Phenylphosphine oxide, bis- (2,6-dichlorobenzoyl) -2,5-dimethylphenylphosphine oxide, bis- (2,6-dichlorobenzoyl) -4-propylphenylphosphine oxide, bis- (2,6-dichloro) Benzoyl) -1-naphthylphosphine oxide, bis- (2,6-dimethoxybenzoyl) phenylphosphine oxide, bis- (2,6-dimethoxybenzoyl) -2,4,4-trimethylpentylphosphine oxide, bis- (2, 6-Dimethoxybenzoyl) -2,5-dimethylphenol Ruphosphine oxide, bis- (2,4,6-trimethylbenzoyl) -phenylphosphine oxide (IRGACURE 819 manufactured by BASF Japan), 2,6-dimethoxybenzoyldiphenylphosphine oxide, 2,6-dichlorobenzoyldiphenylphosphine oxide, 2 , 4,6-Trimethylbenzoylphenylphosphinic acid methyl ester, 2-methylbenzoyldiphenylphosphine oxide, pivaloylphenylphosphinic acid isopropyl ester, 2,4,6-trimethylbenzoyldiphenylphosphine oxide (IRGACURE TPO manufactured by BASF Japan Ltd.), etc. Acylphosphine oxides; 1-hydroxy-cyclohexyl phenyl ketone, 1- [4- (2-hydroxyethoxy) -phenyl Nyl] -2-hydroxy-2-methyl-1-propan-1-one, 2-hydroxy-1- {4- [4- (2-hydroxy-2-methyl-propionyl) -benzyl] phenyl} -2- Hydroxyacetophenones such as methyl-propan-1-one and 2-hydroxy-2-methyl-1-phenylpropan-1-one; benzoin, benzyl, benzoin methyl ether, benzoin ethyl ether, benzoin n-propyl ether, benzoin isopropyl Benzoins such as ether and benzoin n-butyl ether; benzoin alkyl ethers; benzo such as benzophenone, p-methylbenzophenone, Michler's ketone, methylbenzophenone, 4,4'-dichlorobenzophenone, 4,4'-bisdiethylaminobenzophenone Enones; acetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxy-2-phenylacetophenone, 1,1-dichloroacetophenone, 1-hydroxycyclohexyl phenyl ketone, 2-methyl-1- [4- (Methylthio) phenyl] -2-morpholino-1-propanone, 2-benzyl-2-dimethylamino-1- (4-morpholinophenyl) -butanone-1,2- (dimethylamino) -2-[(4- Acetophenones such as methylphenyl) methyl) -1- [4- (4-morpholinyl) phenyl] -1-butanone and N, N-dimethylaminoacetophenone; thioxanthone, 2-ethylthioxanthone, 2-isopropylthioxanthone, 2,4 -Dimethylthioxanthone, 2,4-diethylthioxyl Thioxanthones such as nthone, 2-chlorothioxanthone, 2,4-diisopropylthioxanthone; anthraquinone, chloroanthraquinone, 2-methylanthraquinone, 2-ethylanthraquinone, 2-tert-butylanthraquinone, 1-chloroanthraquinone, 2-amylanthraquinone, Anthraquinones such as 2-aminoanthraquinone; ketals such as acetophenone dimethyl ketal and benzyl dimethyl ketal; benzoic acid esters such as ethyl-4-dimethylaminobenzoate, 2- (dimethylamino) ethylbenzoate, and p-dimethylbenzoic acid ethyl ester 1,2-octanedione, 1- [4- (phenylthio)-, 2- (O-benzoyloxime)], ethanone, 1- [9-ethyl-6- (2-methylbenzo) Yl) -9H-carbazol-3-yl]-, 1- (O-acetyloxime) and other oxime esters; bis (η5-2,4-cyclopentadien-1-yl) -bis (2,6-difluoro) -3- (1H-pyrrol-1-yl) phenyl) titanium, bis (cyclopentadienyl) -bis [2,6-difluoro-3- (2- (1-pyr-1-yl) ethyl) phenyl] Examples thereof include titanocenes such as titanium; phenyl disulfide 2-nitrofluorene, butyroin, anisoin ethyl ether, azobisisobutyronitrile, tetramethylthiuram disulfide, and the like.

  The curing agent component (B2-2) capable of polymerizing the curable component (B1) whose volume shrinks by irradiation with the active energy ray described above by radical addition polymerization reaction may be used alone or in combination of two types. A combination of the above may also be used. Among these, oxime esters (hereinafter referred to as “oxime ester photopolymerization initiators”) and α-aminoacetophenones (hereinafter referred to as “α-aminoacetophenone photopolymerization initiators”) which are one of acetophenones. And one or more photopolymerization initiators selected from the group consisting of acylphosphine oxides (hereinafter referred to as “acylphosphine oxide photopolymerization initiators”).

Examples of the oxime ester photopolymerization initiator include CGI-325, IRGACURE OXE01, IRGACURE OXE02 manufactured by BASF Japan, N-1919 manufactured by ADEKA, and the like as commercially available products. Moreover, the photoinitiator which has two oxime ester groups in a molecule | numerator can also be used suitably, Specifically, the oxime ester compound which has a carbazole structure represented with the following general formula is mentioned.

  In the above formula, X is a hydrogen atom, an alkyl group having 1 to 17 carbon atoms, an alkoxy group having 1 to 8 carbon atoms, a phenyl group, a phenyl group (an alkyl group having 1 to 17 carbon atoms, an alkoxy group having 1 to 8 carbon atoms). Group, an amino group, an alkylamino group having an alkyl group having 1 to 8 carbon atoms or a dialkylamino group, a naphthyl group (an alkyl group having 1 to 17 carbon atoms, an alkoxy group having 1 to 8 carbon atoms), Represents an amino group, an alkylamino group having a C 1-8 alkyl group or a dialkylamino group, and Y and Z are each a hydrogen atom, a C 1-17 alkyl group, and a carbon number 1 -8 alkoxy group, halogen group, phenyl group, phenyl group (alkyl group having 1-17 carbon atoms, alkoxy group having 1-8 carbon atoms, amino group, alkyl group having 1-8 carbon atoms) Substituted with an amino group or a dialkylamino group), a naphthyl group (an alkyl group having 1 to 17 carbon atoms, an alkoxy group having 1 to 8 carbon atoms, an amino group, an alkylamino group having an alkyl group having 1 to 8 carbon atoms) Or substituted with a dialkylamino group), anthryl group, pyridyl group, benzofuryl group, benzothienyl group, Ar is alkylene having 1 to 10 carbon atoms, vinylene, phenylene, biphenylene, pyridylene, naphthylene, thiophene, anthrylene , Thienylene, furylene, 2,5-pyrrole-diyl, 4,4′-stilbene-diyl, 4,2′-styrene-diyl, and n is an integer of 0 or 1.

  Particularly preferred as the oxime ester compound having a carbazole structure represented by the above general formula, wherein X and Y are each a methyl group or an ethyl group, Z is methyl or phenyl, and n is 0. , Ar is an oxime ester compound wherein phenylene, naphthylene, thiophene or thienylene.

  It is preferable that the compounding quantity of an oxime ester photoinitiator shall be 0.01-5 mass parts with respect to 100 mass parts of polyether compounds containing an ethylenically unsaturated group in a molecule | numerator.

  As the α-aminoacetophenone photopolymerization initiator, specifically, 2-methyl-1- [4- (methylthio) phenyl] -2-morpholinopropanone-1, 2-benzyl-2-dimethylamino-1- (4-morpholinophenyl) -butan-1-one, 2- (dimethylamino) -2-[(4-methylphenyl) methyl] -1- [4- (4-morpholinyl) phenyl] -1-butanone, N , N-dimethylaminoacetophenone and the like. Examples of commercially available products include IRGACURE 907, IRGACURE 369, and IRGACURE 379 manufactured by BASF Japan.

  Examples of the acylphosphine oxide photopolymerization initiator include the above-mentioned compounds. Examples of commercially available products include IRGACURE TPO and IRGACURE 819 manufactured by BASF Japan.

  The blending amount of the photopolymerization initiator excluding the oxime ester photopolymerization initiator is 0.1 to 30 parts by mass with respect to 100 parts by mass of the polyether compound containing an ethylenically unsaturated group in the molecule. preferable. When the amount is 0.1 parts by mass or more, the photocurability of the warp correction material is good, the coating film is difficult to peel off, and the coating film characteristics such as chemical resistance are also good. On the other hand, when the amount is 30 parts by mass or less, an effect of reducing outgas is obtained, light absorption on the surface of the coating film is improved, and deep-part curability is hardly lowered. More preferably, it is 0.5-15 mass parts.

  When an oxime ester photopolymerization initiator is used as the curing agent component (B2-2) capable of polymerizing the curable component (B1) whose volume shrinks by irradiation with active energy rays by a radical addition polymerization reaction, a small amount is sufficient. In addition to achieving high sensitivity, the photopolymerization initiator is less volatile during thermal curing when a thermosetting component is blended, and in the post-heating process during mounting, so contamination of equipment such as a drying furnace Can be reduced.

  Further, when an acylphosphine oxide photopolymerization initiator is used, the deep curability at the time of photoreaction is improved, so that a favorable opening shape can be obtained in terms of resolution.

  It is effective to use either an oxime ester photopolymerization initiator or an acyl phosphine oxide photopolymerization initiator. However, from the viewpoint of the resist line shape and opening balance as described above, and photocurability, oxime The combined use of an ester photopolymerization initiator and an acylphosphine oxide photopolymerization initiator is more preferred.

  In addition, a commercially available product may be used as the curing agent component (B2-2) capable of polymerizing the curable component (B1) whose volume shrinks by irradiation with active energy rays by a radical addition polymerization reaction. IRGACURE 389 and IRGACURE 784 manufactured by BASF Japan can be suitably used.

  The compounding amount of the curing agent component (B2-2) capable of polymerizing the curable component (B1) whose volume is shrunk by irradiation with active energy rays by radical addition polymerization reaction is such that the volume shrinks by irradiation of active energy rays. Preferably it is 1-25 mass parts with respect to 100 mass parts of sclerosing | hardenable components (B1), More preferably, it is 5-20 mass parts, More preferably, it is 10-20 mass parts.

  In this invention, when a photocuring agent component is contained as a hardening | curing agent component, the photoinitiator adjuvant or the sensitizer may be contained in the curvature correction material for FO-WLP. Examples of the photoinitiator assistant and sensitizer include benzoin compounds, acetophenone compounds, anthraquinone compounds, thioxanthone compounds, ketal compounds, benzophenone compounds, tertiary amine compounds, and xanthone compounds. A photoinitiator and a sensitizer may be used individually by 1 type, and may be used as a mixture of 2 or more types. Of the above, thioxanthone compounds and tertiary amine compounds are preferred. In particular, it is preferable that a thioxanthone compound is contained from the viewpoint of deep part curability of the resin composition. Among them, it is preferable to contain a thioxanthone compound such as 2,4-dimethylthioxanthone, 2,4-diethylthioxanthone, 2-chlorothioxanthone, 2,4-diisopropylthioxanthone.

  Examples of the combination of the curable component and the curing agent component described above include, for example, thermosetting as the curable component (A1) whose volume is contracted by heating and the curable component (A2) capable of curing the curable component (A1). Photocuring agent component (B2-) as a curing agent component (B2) capable of curing the curing agent component (A2-1), the curable component (B1) whose volume shrinks when irradiated with active energy rays, and the curable component (B1) And a combination with 2).

The warpage correction material for FO-WLP according to the present invention is expressed by the following formula (1) when the volumetric shrinkage ratio by heating is α _H (%):
0 <α _H ≦ 5 (1)
It is preferable to satisfy. α _H can be calculated by the following equation by measuring the density before and after heating of the warp straightening material for FO-WLP.
Volume shrinkage α _H (%) = (1− (density of curable component before heating / density of curable component after heating)) × 100

For example, the density of the warp straightening material for FO-WLP before curing is 1.0 g / cm ³ , and the density of the warp straightening material for FO-WLP after curing by heating is 1.2 g / cm ^3. Assuming that the volume shrinkage rate (%) is about 17%. The density when the warpage correction material for FO-WLP is in a liquid state can be measured from the mass by measuring a certain volume under an atmosphere of 25 ° C., for example. When the warp correction material for FO-WLP is a solid or a curable component after curing, the density can be measured by an underwater substitution method (Archimedes method). More specifically, the density (ρ _S ) is obtained by the following formula using, for example, a Mettler XS205 analytical balance and a density measurement kit “solid and liquid density measurement kit”, using distilled water as a replacement liquid. Can do.
ρ _S = (α × ρ ₀ ) / (α−β)
(In the above formula, ρ _S represents the density of solids, α represents the mass of solids in the atmosphere, β represents the mass of solids in the substitution liquid, and ρ ₀ represents the density of distilled water at the measurement temperature. .)

Further, the warpage correcting material for FO-WLP has the following formula (2) when the volume shrinkage rate by irradiation with active energy rays is α _I (%):
2 ≦ α _I ≦ 20 (2)
It is preferable to satisfy. More preferably, 2 ≦ α _I ≦ 15. α _I can be calculated in the same manner as described above by measuring the density of the warp straightening material for FO-WLP before and after irradiation with active energy rays.

Furthermore, in the present invention, the warpage correction material for FO-WLP has a volume shrinkage ratio (α _H ) due to heating and a volume shrinkage ratio (α _I ) due to irradiation with active energy rays, as shown in the following formula (3):
α _H <α _I (3)
It is preferable to satisfy. By using a warp correction material that satisfies the above formulas (1) to (3), it is possible to more effectively suppress the warpage caused by the manufacturing and mounting of the FO-WLP.

  In the present invention, the blending ratio of the curable components (A1) and (B1) contained in the warp straightening material for FO-WLP is in the range of 0.05 ≦ (A1) / (B1) ≦ 20 as a mass standard. It is preferable that the range is 0.07 ≦ (A1) / (B1) ≦ 15. By mix | blending sclerosing | hardenable component (A1) and (B1) by said ratio, the curing reaction of both sclerosing | hardenable components will advance temporarily, As a result, the more superior curvature correction effect is acquired.

The warp straightening material for FO-WLP according to the present invention may include a film property-imparting polymer component (C1) that makes it easy to maintain the film (or sheet) shape when processed into a film (or sheet) shape. Examples of such a film property-imparting polymer component (C1) include various types of thermoplastic polyhydroxy polyether resins, phenoxy resins that are condensates of epichlorohydrin and various bifunctional phenol compounds, or hydroxyl groups of the hydroxy ether portion present in the skeleton. Examples thereof include phenoxy resins esterified using acid anhydrides and acid chlorides, polyvinyl acetal resins, polyamide resins, polyamideimide resins, block copolymers, and the like. These polymers may be used alone or in combination of two or more. In order to maintain the film (or sheet) shape, the weight average molecular weight (Mw) of these polymers is usually 2 × 10 ⁴ or more, and preferably 2 × 10 ^{4 to} 3 × 10 ⁶ .

In addition, in this specification, the value of a weight average molecular weight (Mw) can be measured with the following measuring apparatus and measurement conditions by the gel permeation chromatography method (GPC) method (polystyrene standard).
Measuring device: “Waters 2695” manufactured by Waters
Detector: “Waters 2414” manufactured by Waters, RI (differential refractometer)
Column: “HSPgel Column, HR MB-L, 3 μm, 6 mm × 150 mm” × 2 from Waters × “HSPgel Column, HR1, 3 μm, 6 mm × 150 mm” × 2 from Waters
Measurement condition:
Column temperature: 40 ° C
RI detector set temperature: 35 ° C
Developing solvent: Tetrahydrofuran Flow rate: 0.5 ml / min Sample volume: 10 μl
Sample concentration: 0.7 wt%

  The polyvinyl acetal resin is obtained, for example, by acetalizing a polyvinyl alcohol resin with an aldehyde. The aldehyde is not particularly limited, and examples thereof include formaldehyde, acetaldehyde, propionaldehyde, butyraldehyde and the like.

  Specific examples of the phenoxy resin include FX280 and FX293 manufactured by Tohto Kasei Co., Ltd., YX8100, YL6954 and YL6974 manufactured by Mitsubishi Chemical Corporation.

  Specific examples of the polyvinyl acetal resin include SLECK KS series manufactured by Sekisui Chemical Co., Ltd., and examples of the polyamide resin include KS5000 series manufactured by Hitachi Chemical Co., Ltd. and BP series manufactured by Nippon Kayaku Co., Ltd.

  Examples of the polyamide-imide resin include KS9000 series manufactured by Hitachi Chemical Co., Ltd.

  When a thermoplastic polyhydroxypolyether resin has a fluorene skeleton, it has a high glass transition point and excellent heat resistance, so it maintains a low coefficient of thermal expansion due to a semi-solid or solid epoxy resin and maintains its glass transition point. The resulting cured film has a low thermal expansion coefficient and a high glass transition point in a well-balanced manner. Moreover, since the thermoplastic polyhydroxy polyether resin has a hydroxyl group, it exhibits good adhesion to the pseudo wafer.

  The film property-imparting polymer component (C1) may be obtained by block copolymerization of monomers constituting the above-described components. The block copolymer is a copolymer having a molecular structure in which two or more kinds of polymers having different properties are connected by a covalent bond to form a long chain. As the block copolymer, an XY-X type or an XY-X 'type block copolymer is preferable. Of the XYX type and XYX 'type block copolymers, the center Y is a soft block and the glass transition temperature (Tg) is low, and both outer side X or X' is a hard block What is comprised by the polymer unit whose glass transition temperature (Tg) is higher than a center Y block is preferable. The glass transition temperature (Tg) is measured by differential scanning calorimetry (DSC).

  Of the XYX type and XYX ′ type block copolymers, X or X ′ is composed of polymer units having a Tg of 50 ° C. or more, and the glass transition temperature (Tg) of Y is More preferred is a block copolymer consisting of polymer units having a Tg of X or X ′ or less. Among the XYX type and XYX 'type block copolymers, those in which X or X' is highly compatible with the curable component (A1) or the curable component (B1). Preferably, Y is low in compatibility with the curable component (A1) or the curable component (B1). In this way, a block copolymer in which the blocks at both ends are compatible with the matrix (curable component) and the block at the center is incompatible with the matrix (curable component) is unique in the matrix. It is thought that it becomes easy to show a simple structure.

  Among the various film property-imparting polymer components (C1) described above, phenoxy resins, polyvinyl acetal resins, thermoplastic polyhydroxy polyether resins having a fluorene skeleton, and block copolymers are preferable.

  When the film property-imparting polymer component (C1) is added to the warpage straightening material for FO-WLP of the present invention, the ratio of the film property-imparting polymer component (C1) occupying all components constituting the warpage straightening material for FO-WLP is It is not specifically limited, It is preferable that it is 2-40 mass parts when the sum total of all the components is 100 mass parts, More preferably, it is 5-35 mass parts.

  The warp correction material for FO-WLP according to the present invention may contain an inorganic filler component (D). By containing the inorganic filler component (D), for example, FO-WLP can be easily cut into pieces (dicing). In addition, by applying laser marking to the protective film, the inorganic filler component (D) is exposed in the portion scraped by the laser light, and the reflected light is diffused to exhibit a color close to white. Thereby, when the curvature correction material for FO-WLP contains the colorant component (E) described later, a contrast difference is obtained between the laser marking portion and other portions, and the marking (printing) becomes clear. is there.

  As the inorganic filler component (D), conventionally known ones can be used without limitation. For example, silica, alumina, talc, aluminum hydroxide, calcium carbonate, Neuburg silica, glass powder, clay, magnesium carbonate, natural mica , Synthetic mica, barium sulfate, barium titanate, hydrotalcite, mineral wool, aluminum silicate, calcium silicate, zinc white, titanium oxide, iron oxide, silicon carbide, boron nitride powder, spheroidized beads, single Examples thereof include crystal fibers and glass fibers, and one kind can be used alone, or two or more kinds can be mixed and used. Among these, silica, alumina, and titanium oxide are preferable in order to control the relative dielectric constant in the film.

  The inorganic filler component (D) preferably has an average particle size of 0.01 to 15 μm, more preferably 0.02 to 12 μm, and particularly preferably 0.03 to 10 μm. In the present specification, the average particle diameter is the number average particle diameter calculated as the arithmetic average value of 20 major axis diameters of 20 inorganic fillers (C) randomly selected with an electron microscope.

  The content of the inorganic filler component (D) is such that the curable components (A1) and (B1), the curing agent components (A2) and (B2) of the warp straightening material for FO-WLP, and the reactive film imparting property. When the total of the polymer component (C1) and the reactive film-providing polymer component (C2) is 100 parts by mass, the amount is preferably 10 to 400 parts by mass, more preferably 20 to 350 parts by mass, particularly preferably. Is 30 to 300 parts by mass.

  The warping correction material for FO-WLP according to the present invention may contain a colorant component (E). By including the colorant component (E), when a semiconductor chip on which a warp correction material for FO-WLP is arranged is incorporated into a device, malfunction of the semiconductor device due to infrared rays generated from surrounding devices is prevented. be able to. In addition, when the curing agent composition is engraved by means such as laser marking, marks such as letters and symbols are easily recognized. That is, in a semiconductor chip on which a warp correction layer is formed, the product number or the like is usually printed on the surface of the protective film by a laser marking method (a method in which the surface of the protective film is scraped off and printed by laser light), but for FO-WLP. When the warp correction material contains a colorant, a sufficient difference in contrast between the portion of the protective film scraped by the laser beam and the portion that is not removed is obtained, and the visibility is improved.

  As the colorant component (E), organic or inorganic pigments and dyes can be used singly or in combination of two or more. Among these, black pigments are preferable from the viewpoint of electromagnetic wave and infrared shielding properties. Examples of the black pigment include carbon black, perylene black, iron oxide, manganese dioxide, aniline black, activated carbon, and the like, but are not limited thereto. Carbon black is particularly preferable from the viewpoint of preventing malfunction of the semiconductor device. Further, instead of carbon black, pigments or dyes such as red, blue, green, and yellow can be mixed to obtain black or a black color close thereto.

  Examples of red colorants include monoazo, disazo, azo lake, benzimidazolone, perylene, diketopyrrolopyrrole, condensed azo, anthraquinone, and quinacridone. Specific examples include the following: It is done. Pigment Red 1, 2, 3, 4, 5, 6, 8, 9, 12, 14, 15, 16, 17, 21, 22, 23, 31, 32, 112, 114, 146, 147, 151, 170, 184, 187, 188, 193, 210, 245, 253, 258, 266, 267, 268, 269 and other monoazo red colorants, Pigment Red 37, 38, 41 and other disazo red colorants, Pigment Red 48: 1, 48: 2, 48: 3, 48: 4, 49: 1, 49: 2, 50: 1, 52: 1, 52: 2, 53: 1, 53: 2, 57: 1, 58: 4, 63: 1 63: 2, 64: 1, 68 etc. monoazo lake red colorant, PigmentRed171, PigmentRed175, PigmentRed176, PigmentRe 185, benzimidazolone red colorant such as PigmentRed208, SolventRed135, SolventRed179, PigmentRed123, PigmentRed149, PigmentRed166, PigmentRed178, PigmentRed179, PigmentRed190, PigmentRed194, perylene-based red coloring agents such as PigmentRed224, PigmentRed254, PigmentRed255, PigmentRed264, PigmentRed270, PigmentRed272 Diketopyrrolopyrrole red colorant such as PigmentRed220, PigmentRed144, PigmentRed166, PigmentRed214, Pi gmentRed220, PigmentRed221, condensed azo red colorant such as PigmentRed242, PigmentRed168, PigmentRed177, PigmentRed216, SolventRed149, SolventRed150, SolventRed52, anthraquinone-based red coloring agents such as SolventRed207, PigmentRed122, PigmentRed202, PigmentRed206, PigmentRed207, quinacridone such PigmentRed209 red Coloring agents are mentioned.

  Examples of blue colorants include phthalocyanine series and anthraquinone series, and pigment series are compounds classified as Pigment, specifically: Pigment Blue 15, Pigment Blue 15: 1, Pigment Blue 15: 2, Pigment Blue 15: 3, Pigment Blue 15: 4. Pigment Blue 15: 6, Pigment Blue 16, Pigment Blue 60, and the like. Examples of the dye system include Solvent Blue 35, Solvent Blue 63, Solvent Blue 68, Solvent Blue 70, Solvent Blue 83, Solvent Blue 87, Solvent Blue 94, Solvent Blue 97, Solvent Blue 122, Solvent Blue 70, Solvent Blue 70, and Solvent Blue 70 In addition to these, metal-substituted or unsubstituted phthalocyanine compounds can also be used.

  Similarly, the green colorant includes phthalocyanine, anthraquinone, perylene, and the like. Specifically, PigmentGreen 7, PigmentGreen 36, SolventGreen 3, SolventGreen 5, SolventGreen 20, SolventGreen 28, and the like can be used. In addition to the above, a metal-substituted or unsubstituted phthalocyanine compound can also be used.

  Examples of yellow colorants include monoazo, disazo, condensed azo, benzimidazolone, isoindolinone, and anthraquinone, and specific examples include the following. SolventYellow163, PigmentYellow24, PigmentYellow108, PigmentYellow193, PigmentYellow147, PigmentYellow199, anthraquinone-based yellow colorant such as PigmentYellow202, PigmentYellow110, PigmentYellow109, PigmentYellow139, PigmentYellow179, isoindolinone-based yellow colorant such as PigmentYellow185, PigmentYellow93, PigmentYellow94, PigmentYellow95, PigmentYellow128, PigmentYellow155, Pigment Yellow 166, Pigment Yellow 120, Pigment Yellow 151, Pigment Yellow 154, Pigment Yellow 156, Pigment Yellow 175, Pigment Yellow 181, Yield 6, 61, yellow 9 62, 62: 1, 65, 73, 74, 75, 97, 100, 104, 105, 111, 116, 167, 168, 169, 182, 183, and the like, Pigment Yellow 12, 13, 14, 16, 17, 55, 63, 81, 83, 87, 126, 127, 152, 170, 172, 174, 176, 188 Etc. can be used disazo-based yellow colorant such as 198.

  Moreover, you may add colorants, such as purple, orange, brown, and black, in order to adjust a color tone. Specifically, PigmentViolet 19, 23, 29, 32, 36, 38, 42, Solvent Violet 13, 36, C.I. I. Pigment orange 1, C.I. I. Pigment orange 5, C.I. I. Pigment orange 13, C.I. I. Pigment orange 14, C.I. I. Pigment orange 16, C.I. I. Pigment orange 17, C.I. I. Pigment orange 24, C.I. I. Pigment orange 34, C.I. I. Pigment orange 36, C.I. I. Pigment orange 38, C.I. I. Pigment orange 40, C.I. I. Pigment orange 43, C.I. I. Pigment orange 46, C.I. I. Pigment orange 49, C.I. I. Pigment orange 51, C.I. I. Pigment orange 61, C.I. I. Pigment orange 63, C.I. I. Pigment orange 64, C.I. I. Pigment orange 71, C.I. I. Pigment orange 73, C.I. I. Pigment brown 23, C.I. I. Pigment brown 25, C.I. I. Pigment black 1, C.I. I. Pigment black 7 and the like.

  When forming a through electrode in the fan-out region of the FO-WLP, it is necessary to laser process the fan-out region and the FO-WLP warpage correction layer at the same time. Therefore, the warpage correction layer is also light-transmissive for alignment. It is preferable to have. In such a case, the colorant component (E) can be selected with appropriate consideration.

  The blending amount of the colorant component (E) is excellent in light transmittance to the deep part, and as a result, a more preferable warp correction layer is obtained. From the viewpoint of obtaining a more preferable warp correction layer, the curable component (A1) of the warp correction material for FO-WLP and When the total of (B1), curing agent components (A2) and (B2), reactive film-providing polymer component (C1) and reactive film-providing polymer component (C2) is 100 parts by mass, On the other hand, it is preferably 0.1 to 35 parts by mass, more preferably 0.5 to 25 parts by mass, and particularly preferably 1 to 15 parts by mass.

  In the warp correction material for FO-WLP according to the present invention, when the warp correction layer is provided on FO-WLP, the adhesion of the warp correction layer to the adherend (pseudo wafer), adhesion, and cohesion of the warp correction layer. In order to improve at least one of the above, a coupling agent component (F1) having a functional group that reacts with an inorganic substance and a functional group that reacts with an organic functional group may be included. In addition, since the coupling agent component (F1) is contained, a coating film of a warp straightening material for FO-WLP is formed on FO-WLP, and the warp straightening material for FO-WLP is cured to provide a warp straightening layer. In the case where is formed, the water resistance can be improved without impairing the heat resistance of the warp correction layer. Examples of such coupling agents include titanate coupling agents, aluminate coupling agents, silane coupling agents, and the like. Of these, silane coupling agents are preferred.

  Examples of organic groups contained in the silane coupling agent include vinyl groups, epoxy groups, styryl groups, methacryloxy groups, acryloxy groups, amino groups, ureido groups, chloropropyl groups, mercapto groups, polysulfide groups, and isocyanate groups. Can be mentioned. Commercially available silane coupling agents can be used, for example, KA-1003, KBM-1003, KBE-1003, KBM-303, KBM-403, KBE-402, KBE-403, KBM-1403. , KBM-502, KBM-503, KBE-502, KBE-503, KBM-5103, KBM-602, KBM-603, KBE-603, KBM-903, KBE-903, KBE-9103, KBM-9103, KBM -573, KBM-575, KBM-6123, KBE-585, KBM-703, KBM-802, KBM-803, KBE-846, KBE-9007 (all trade names; manufactured by Shin-Etsu Silicone) it can. These may be used alone or in combination of two or more.

  In addition to the above-described components, various additives may be blended in the warp straightening material for FO-WLP according to the present invention as necessary. Various additives include leveling agents, plasticizers, antioxidants, ion scavengers, gettering agents, chain transfer agents, release agents, rust inhibitors, adhesion promoters, UV absorbers, thermal polymerization inhibitors, thickening agents. You may contain a well-known and usual additive in the field | areas of electronic materials, such as an agent and an antifoamer.

  The warp straightening material for FO-WLP according to the present invention may contain an organic solvent. The organic solvent is a synthesis of a polyether compound containing an ethylenically unsaturated group in the molecule, mixing of each component, and when applying the obtained warpage correction material for FO-WLP to a substrate or a support film. Can be used for viscosity adjustment.

  Examples of the organic solvent include ketones, aromatic hydrocarbons, glycol ethers, glycol ether acetates, esters, alcohols, aliphatic hydrocarbons, petroleum solvents, and the like.

  More specifically, ketones such as methyl ethyl ketone and cyclohexanone, aromatic hydrocarbons such as toluene, xylene, and tetramethylbenzene, cellosolve, methyl cellosolve, butyl cellosolve, carbitol, methyl carbitol, butyl carbitol, propylene glycol monomethyl Glycol ethers such as ether, dipropylene glycol monomethyl ether, dipropylene glycol diethyl ether, triethylene glycol monoethyl ether, ethyl acetate, butyl acetate, dipropylene glycol methyl ether acetate, propylene glycol methyl ether acetate, propylene glycol ethyl ether acetate , Esters such as propylene glycol butyl ether acetate, ethanol, propanol Ethylene glycol, or propylene glycol, octane, can be exemplified aliphatic hydrocarbons decane, petroleum ether, petroleum naphtha, hydrogenated petroleum naphtha, petroleum solvents such as solvent naphtha. An organic solvent may be used individually by 1 type, and may be used in combination of 2 or more type.

  The warpage correction material for FO-WLP according to the present invention is preferably a maximum transmittance of 20% or less at a wavelength of 300 to 800 nm, which is a scale showing the transmittance of at least one of visible light and ultraviolet light. It is more preferably 0 to 15%, further preferably 0 to 10%, and particularly preferably 0.001 to 8%.

  On the other hand, when it is necessary to perform alignment when manufacturing FO-WLP from a pseudo wafer, the warpage correction material for FO-WLP has a transmittance at a wavelength of 800 to 1200 nm, which is a measure of infrared transmittance, of 50. % Or more, more preferably 55% or more, still more preferably 60% or more, and particularly preferably 65% or more.

  By setting the transmittance of the warp correction material for FO-WLP at wavelengths of 300 to 800 nm and wavelengths of 800 to 1200 nm within the above ranges, effects such as improved alignment of a semiconductor device and improved visibility of printing can be obtained.

  The maximum transmittance at a wavelength of 300 to 800 nm and a wavelength of 800 to 1200 nm of the warp correction material for FO-WLP can be adjusted by the type and content of the colorant component (E) described above. In this specification, the maximum transmittance of the warp correction material for FO-WLP was obtained by curing the warpage correction material for FO-WLP using a UV-vis spectrum inspection apparatus (manufactured by Shimadzu Corporation). The total cured light transmittance at 300 to 1200 nm of the subsequent cured product (warp correction layer (thickness 25 μm)) is measured, and the highest transmittance (maximum transmittance) is assumed.

  When the warp straightening material for FO-WLP of the present invention is formed into a film (or sheet-like) shape, the thickness is not particularly limited, but is preferably 3 to 300 μm, more preferably 5 to 250 μm, and particularly preferably 7 ~ 200 μm.

  The warpage straightening material for FO-WLP according to the present invention includes, for example, a cyclic ether compound as a curable component (A1) whose volume shrinks by heating, and a curable component (B1) whose volume shrinks when irradiated with active energy rays. ) Includes a compound having one or more ethylenically unsaturated groups in the molecule, it has initial adhesion, so that it is easily bonded by pressing against a pseudo-wafer or a chip in an uncured state. Moreover, you may implement any means of a heating and pressurization with respect to the curvature correction material for FO-WLP when pressing. And through a different curing reaction, a cured film (warp correction layer) having high adhesion and high warp correction power can be finally formed. The cured film (warp correction layer) formed using the warp correction material for FO-WLP according to the present invention is excellent in adhesive strength and can maintain a sufficient protective function even under severe high temperature and high humidity conditions. Note that the warp correction layer obtained by curing the warp correction material for FO-WLP may have a single layer structure or a multilayer structure.

  The warp correction material for FO-WLP of the present invention may be used in the form of a dry film, or may be used in a liquid state. When used as a liquid, it may be one-component or two-component or more.

  When making a dry film, the warp straightening material for FO-WLP is diluted with an organic solvent and adjusted to an appropriate viscosity. A comma coater, blade coater, lip coater, rod coater, squeeze coater, reverse coater, transfer roll coater, A film can be obtained by applying a uniform thickness on a support film with a gravure coater, spray coater or the like, and drying usually at a temperature of 50 to 130 ° C. for 1 to 30 minutes.

  Although there is no restriction | limiting in particular about an application | coating film thickness, Generally the film thickness of the dry film after drying is suitably selected in the range of 5-150 micrometers, preferably 10-60 micrometers in the point from which a more preferable curvature correction layer is obtained. .

  As the support film, conventionally known films such as separate paper, separate film, separate paper, release film, release paper and the like can be suitably used. Also, release on one or both sides of a release paper substrate made of a polyester film such as polyethylene terephthalate (PET) or polyethylene naphthalate (PEN), a polyolefin film such as stretched polypropylene film (OPP), or a plastic film such as polyimide film. You may use what formed the layer. The release layer is not particularly limited as long as it has a release property, and examples thereof include silicone resins, organic resin-modified silicone resins, and fluororesins.

  Although there is no restriction | limiting in particular about the thickness of a support body film, Generally, it selects suitably in the range of 10-150 micrometers.

  After forming a warp correction material for FO-WLP on the support film, a peelable cover film may be laminated on the surface of the film for the purpose of preventing dust from adhering to the surface of the film. . As the peelable cover film, for example, a polyethylene film, a polytetrafluoroethylene film, a polypropylene film, a surface-treated paper, or the like can be used. In consideration of peeling of the cover film, the adhesive force between the membrane and the cover film is made smaller than the adhesive force between the membrane and the support film.

  The warpage straightening material for FO-WLP of the present invention is adjusted to a viscosity suitable for the coating method with, for example, an organic solvent, and on the substrate, a dip coating method, a flow coating method, a roll coating method, a bar coater method, screen printing. The film shape can be formed by applying the organic solvent contained in the composition by volatile drying (temporary drying) at a temperature of about 60 to 100 ° C.

  Volatile drying performed after applying the warp straightening material for FO-WLP of the present invention is performed using a hot air circulation drying furnace, an IR furnace, a hot plate, a convection oven, etc. This method can be carried out using a method in which hot air in the machine is brought into countercurrent contact and a method in which the hot air is blown onto the support from the nozzle.

  When the warp straightening material for FO-WLP of the present invention is used as a liquid, a coating film may be formed in a desired region of the FO-WLP pseudo wafer by ink jet printing. In that case, for example, by applying the electrode pad, electrode via, or alignment mark portion formed on the pseudo wafer, the step of opening the subsequent electrode portion while developing the warp correction force can be omitted or alignment can be performed. Marks can be easily recognized.

  In addition, when performing ink jet printing, by applying the curing reaction by applying only to the area of the FO-WLP pseudo-wafer that is particularly desired to correct the warp, the area where the warp is particularly desired to be corrected is strongly corrected. It is also possible to efficiently suppress warping and distortion.

  Moreover, when forming a curvature correction layer by inkjet printing, you may perform by multiple times of printing. For example, a coating film is formed on the entire surface of the FO-WLP pseudo-wafer by the first ink jet printing, and then the coating film is formed only on a region where warpage correction is to be performed by the second ink jet printing. In addition, the thickness of the coating film can be formed unevenly, and the strength of the warp correction force can be increased or decreased in the surface.

  When the warpage correction material for FO-WLP in the present invention is used as a liquid for inkjet, its preferred viscosity is 10 to 1000 (Pa · s) at 25 ° C., and its preferred surface tension is 10 to 50 mN / m. By adjusting as described above, it is preferable because a warp correction material for FO-WLP can be efficiently formed on the pseudo wafer. The adjustment of the viscosity and the surface tension can be appropriately performed depending on the kind and content of the material to be blended.

<Uses of warp straightening material for FO-WLP>
The case where the warpage correction layer of FO-WLP is formed using the above-described warpage correction material will be described.

  First, a semiconductor wafer is prepared and a circuit is formed on one surface. The semiconductor wafer may be a silicon wafer or a compound semiconductor wafer such as gallium arsenide (GaAs). A circuit can be formed on the wafer surface by various methods including a widely used method such as an etching method and a lift-off method. The semiconductor wafer may be cut into individual semiconductor chips through a dicing process.

  The semiconductor chip obtained as described above is placed on a plate-like carrier having a smooth surface through an adhesive layer. Although it does not specifically limit as a carrier, A circular or square silicon wafer and a metal plate can be used. Further, as the adhesive layer, a layer that can temporarily fix the semiconductor chip and can be peeled off after the pseudo wafer is manufactured is used. As such an adhesive layer material, an acrylic adhesive, a rubber adhesive, a styrene / conjugated diene block copolymer, or the like can be used. Further, as the adhesive layer material, a carboxyl group-containing resin having an ethylenically unsaturated group and a radical polymerization initiator as described above can be contained. By containing such a resin, heating or active energy rays can be contained. The adhesiveness of the adhesive layer can also be changed by irradiation.

  When placing a semiconductor chip on the adhesive layer, a plurality of semiconductor chips are placed separately. The semiconductor chips to be mounted may be the same or different in the number of arrangement in the vertical and horizontal directions in plan view, and from various viewpoints such as improving the density and securing the terminal area per unit semiconductor chip, You may arrange | position in a grid | lattice form etc. The distance between the adjacent semiconductor chips is not particularly limited, but may be arranged so as to obtain a fan-out (FO) region necessary for forming a connection terminal of the finally obtained FO-WLP. desirable.

  Subsequently, the semiconductor chip placed on the plate-like carrier via the adhesive layer is sealed with a sealing material. The semiconductor chip is placed and the sealing material is applied or bonded onto the carrier so that the side wall surface and the upper surface of the semiconductor chip are sealed with the sealing material. At this time, the sealing material is molded so as to be embedded in the space between the semiconductor chips. The sealing step using such a sealing material can be formed by performing compression molding using a known semiconductor sealing resin composition that is liquid, granule, or sheet. For known semiconductor sealing resin compositions, epoxy resins, epoxy resin curing agents, curing accelerators, spherical fillers and the like are mainly used.

  After the sealing material is cured, the plate-like carrier is peeled off. Peeling is performed between the sealing material and the semiconductor chip and the adhesive layer. As a peeling method, heat treatment is performed to change (decrease) the adhesive strength of the adhesive layer and release, or first peeling is performed between the plate-like carrier and the adhesive layer, and then the adhesive layer is subjected to heat treatment or Examples of the method include a method of releasing after the irradiation treatment with an electron beam or ultraviolet rays.

  The pseudo wafer thus obtained may be post-cured. Post-curing is performed, for example, in a temperature range of 150 to 200 ° C. and in a range of 10 minutes to 8 hours. Subsequently, the pseudo wafer can be thinned by polishing the opposite side of the obtained pseudo wafer where the semiconductor is embedded. The grinding method is not particularly limited, and grinding may be performed by a known means using a grinder or the like. The thickness of the pseudo wafer after grinding is not particularly limited, but is usually about 50 to 500 μm.

  Subsequently, a rewiring layer is formed on the side of the pseudo wafer where the circuit of the semiconductor chip is exposed. First, a rewiring insulating resin is applied to the entire surface of the pseudo wafer with the semiconductor chip circuit exposed by spin coating or the like, and prebaked at about 100 ° C. to form a rewiring insulating resin layer. To do. Next, in order to open the connection pads of the semiconductor chip, a pattern is formed on the insulating resin layer for rewiring using a photolithography method or the like, and heat treatment (curing) is performed. As the conditions for the heat treatment, for example, it is carried out in a temperature range of 150 to 250 ° C. and a range of 10 minutes to 5 hours. Although it does not specifically limit as insulating resin for rewiring, From a heat resistant and reliable viewpoint, a polyimide resin, a polybenzooxide resin, a benzocyclobutene resin etc. are used. As described above, when the insulating resin for rewiring is heat-treated, the pseudo wafer may be warped due to heat shrinkage of the insulating resin.

  A power feeding layer is formed on the entire surface of the rewiring layer surface of the pseudo wafer by a method such as sputtering, then a resist layer is formed on the power feeding layer, exposed to a predetermined pattern and developed, and then via and copper are plated by electrolytic copper plating. A rewiring circuit is formed. After forming the rewiring circuit, the resist layer is peeled off and the power feeding layer is etched.

  Subsequently, flux is applied to the lands provided on the rewiring circuit, the solder balls are mounted, and then heated and melted to attach the solder balls to the lands. Further, a solder resist layer may be formed so as to cover a part of the rewiring circuit and the solder balls. The applied flux can be resin-based or water-based. As the heating and melting method, reflow, hot plate or the like can be used. In this way, a pseudo wafer of FO-WLP is obtained.

  Thereafter, the FO-WLP is obtained by dividing the pseudo wafer of FO-WLP by a method such as dicing.

  A coating film is formed by applying the FO-WLP warpage correction material to the surface opposite to the surface on which the rewiring layer of the pseudo wafer thus obtained is formed. Examples of the coating method when the coating film is formed from a liquid warp correction material include a screen printing method and an ink jet printing method. In addition, when using the FO-WLP warpage correction material in the form of a dry film as described above, the dry film is bonded. As a sticking method, known methods such as a hand roller, a laminator, a vacuum laminator, and compression molding can be used.

  Although heating may be performed in the sticking step, when the dry film is stuck while heating, heating in a range in which the thermosetting reaction of the warp straightening material for FO-WLP does not proceed is desirable. As the temperature at which the thermosetting reaction starts, for example, the ONSET temperature at which reaction heat in DSC measurement is observed can be confirmed, and can be set below that temperature. The DSC measurement is performed by using, for example, TA Instruments DSC Q100 and heating the FO-WLP warp straightening material to a temperature of 30 to 300 ° C. at a heating rate of 5 ° C./min in a nitrogen atmosphere. Temperature and OFFSET temperature can be obtained.

  Then, a support body film is peeled from a dry film and the laminated body of a pseudo wafer and a dry film is obtained.

  Next, the dry film is cured to form a warp correction layer. When the FO-WLP warpage correction material contains a curable component that undergoes a curing reaction by active energy rays, irradiation with active energy rays results in an exposed portion (part irradiated by active energy rays). ) Can be cured. The entire surface of the dry film before the reaction may be exposed to irradiation with active energy rays, or exposure with active energy rays may be performed through a photomask having a pattern formed by a contact method or a non-contact method. In addition, the exposed portion can be photocured by direct pattern exposure using a laser direct exposure machine.

  In the case of pattern exposure using a photomask with a pattern or direct pattern exposure using a laser direct exposure machine, in the case of partial exposure, the unexposed portion is diluted with a dilute alkaline aqueous solution (for example, 0.3 to 3 wt% tetramethyl hydroxide). It may be developed with an ammonium (TMAH) aqueous solution or a 0.3 to 3 wt% sodium carbonate aqueous solution) to form a photosensitive pattern of the warp correction layer, or a photocured portion and an uncured portion may be formed without development. Also good.

  The pattern shape in the case of exposure with a photomask or direct pattern exposure with a laser direct exposure machine can be selected from repetitive patterns such as a lattice pattern, checkered pattern, and polka dot pattern. It is preferable that the repeating unit of the pattern of the opening and the light shielding portion is smaller than the size of the finally obtained semiconductor package. Further, different patterns may be used in the region where the semiconductor chip is present in the FO-WLP pseudo-wafer and the resin region forming the pseudo-wafer.

  By irradiating active energy rays by changing the aperture ratio and pattern calculated from the opening / shading part of the photomask continuously / discontinuously from the wafer central part to the peripheral part during exposure, The reaction state of the warp correction layer can also be changed in the plane. When direct pattern exposure is performed using a laser direct exposure machine, the entire surface may be exposed in a uniform pattern or may be exposed non-uniformly. Furthermore, the pattern to be exposed may be changed continuously / discontinuously.

  As an exposure machine used for active energy ray irradiation, a high-pressure mercury lamp lamp, an ultra-high pressure mercury lamp lamp, a metal halide lamp, a mercury short arc lamp, or the like may be mounted, and an apparatus that irradiates ultraviolet rays in the range of 350 to 450 nm may be used.

  A direct drawing apparatus (for example, a laser direct imaging apparatus that directly draws an image with a laser using CAD data from a computer) can also be used. As a laser light source of the direct drawing machine, either a gas laser or a solid laser may be used as long as laser light having a maximum wavelength in the range of 350 to 410 nm is used.

The exposure amount varies depending the thickness or the like, typically 10 to 10000 mJ / cm ^2, preferably be in the range of 20~8000mJ / cm ^2.

  As a developing method, a dipping method, a shower method, a spray method, a brush method or the like can be used. As a developing solution, tetramethylammonium hydroxide (TMAH), potassium hydroxide, sodium hydroxide, sodium carbonate, potassium carbonate, Alkaline aqueous solutions such as sodium phosphate, sodium silicate, ammonia and amines can be used.

  In the present invention, the FO-WLP is adjusted by appropriately adjusting the degree of cure of the warp correction layer of the pseudo wafer by selecting the irradiation amount of active energy rays, selection of whole surface irradiation and partial irradiation, and development processing in the case of partial irradiation. The correction amount can be easily adjusted depending on the degree of warpage.

  When the FO-WLP warpage correction material contains a curable component that undergoes a curing reaction by heat, the curing reaction can be advanced by heating. Heating methods include oven heating, hot plate heating, high-temperature air heating, infrared heating, convection ovens, etc. (using a heating source with steam air heating method, using hot air in the dryer in countercurrent contact and support from nozzle The method of spraying on

  The temperature at which the warp straightening material for FO-WLP is cured by heat to form a warp straightening layer can be set, for example, by checking the ONSET temperature at which reaction heat in DSC measurement is observed, and higher than that temperature. Furthermore, it is desirable to set the peak top temperature or higher and the OFFSET temperature or lower. The DSC measurement is performed by using, for example, TA Instruments DSC Q100 and heating the FO-WLP warp straightening material to a temperature of 30 to 300 ° C. at a heating rate of 5 ° C./min in a nitrogen atmosphere. Temperature and OFFSET temperature can be obtained.

  In the present invention, by adjusting the temperature and time for curing by heat, increasing the temperature in one step to the target temperature, or performing step heating that heats to the final temperature through an intermediate temperature, The degree of correction can be easily adjusted by appropriately adjusting the degree of cure of the warp correction layer and the degree of warpage of FO-WLP. The time for curing the warp straightening material for FO-WLP by heating is preferably 30 seconds to 3 hours.

  As a method for curing the warpage correction material for FO-WLP, irradiation with active energy rays and heating may be performed simultaneously or separately. Moreover, you may perform irradiation of an active energy ray once or twice or more. Moreover, you may perform the heating for thermosetting once or twice or more. In the present invention, a method of simultaneously performing active energy ray irradiation and heating, a method of performing heating after irradiation of active energy rays, a method of irradiating active energy rays after heating, and performing heating after irradiation of active energy rays Further, a method of irradiating active energy rays is preferable from the viewpoint of the reactivity of the curing reaction.

  In addition, even when the warp correction layer is formed by curing the FO-WLP warp correction material by irradiation or heating with an active energy ray, if the amount of warp correction is insufficient, irradiation with an additional active energy ray is performed. It is also possible to increase the warping correction force by further promoting the reaction by heating or heating.

  EXAMPLES Hereinafter, although an Example demonstrates this invention, this invention is not limited to these Examples. Unless otherwise specified, “parts” and “%” mean parts by mass.

<Preparation of curable component (B1) 1>
In an autoclave equipped with a thermometer, a nitrogen introduction device / alkylene oxide introduction device, and a stirring device, 119.4 parts of a novolac type cresol resin (Showa Denko KK, Shonor CRG951, OH equivalent: 119.4), potassium hydroxide 1.19 parts and 119.4 parts of toluene were charged, the system was purged with nitrogen while stirring, and the temperature was raised by heating. Next, 63.8 parts of propylene oxide was gradually added dropwise and reacted at 125 to 132 ° C. and 0 to 4.8 kg / cm ² for 16 hours. Thereafter, the reaction solution was cooled to room temperature, and 1.56 parts of 89% phosphoric acid was added to and mixed with the reaction solution to neutralize potassium hydroxide. The nonvolatile content was 62.1% and the hydroxyl value was 182.2 g / eq. A novolak-type cresol resin propylene oxide reaction solution was obtained. This was an average of 1.08 moles of alkylene oxide added per equivalent of phenolic hydroxyl group.

  293.0 parts of an alkylene oxide reaction solution of the obtained novolak-type cresol resin, 43.2 parts of acrylic acid, 11.53 parts of methanesulfonic acid, 0.18 part of methylhydroquinone and 252.9 parts of toluene were mixed with a stirrer, temperature A reactor equipped with a meter and an air blowing tube was charged, air was blown at a rate of 10 ml / min, and the reaction was carried out at 110 ° C. for 12 hours while stirring. 12.6 parts of water was distilled from the water produced by the reaction as an azeotrope with toluene. Thereafter, the reaction solution was cooled to room temperature, neutralized with 35.35 parts of a 15% aqueous sodium hydroxide solution, and then washed with water. Thereafter, toluene was distilled off while substituting 118.1 parts of diethylene glycol monoethyl ether acetate (carbitol acetate) with an evaporator to obtain a novolak acrylate resin solution.

  Next, 332.5 parts of the obtained novolak acrylate resin solution and 1.22 parts of triphenylphosphine were charged into a reactor equipped with a stirrer, a thermometer and an air blowing tube, and air was supplied at a rate of 10 ml / min. While blowing and stirring, 60.8 parts of tetrahydrophthalic anhydride was gradually added and reacted at 95 to 101 ° C. for 6 hours. After cooling, the solid had an acid value of 88 mg KOH / g and a solid content of 70.9%. As a result, an acrylic-containing polyether compound solution, which is the sex component (B1) 1, was obtained.

<Preparation of curable component (B1) 2>
Cresole novolac type epoxy resin (manufactured by Nippon Kayaku Co., Ltd., EOCN-104S, epoxy equivalent 220 g / eq) 220 parts (1 equivalent), carbitol acetate 140.1 parts, and solvent naphtha 60.3 parts were charged in a flask, 90 Heated and stirred at 0 ° C. to dissolve. The obtained solution is once cooled to 60 ° C., 72 parts (1 mol) of acrylic acid, 0.5 part of methylhydroquinone and 2 parts of triphenylphosphine are added, heated to 100 ° C., reacted for about 12 hours, and acid value Yielded a reaction of 0.2 mg KOH / g. To this was added 80.6 parts (0.53 mol) of tetrahydrophthalic anhydride, heated to 90 ° C., and allowed to react for about 6 hours. A curable component having a solid content acid value of 85 mgKOH / g and a solid content of 64.9%. The acrylic-containing polyether compound solution which is (B1) 2 was obtained.

<Preparation of film imparting polymer (C1)>
To 75 g of diethylene glycol monoethyl ether acetate (CA), 25 g of YXY block copolymer (M52N manufactured by Arkema) was added, stirred and dissolved by heating at 80 ° C. This was designated as film property-imparting polymer C1.

<Preparation of warp correction materials 1-7>
In accordance with the formulation shown in Table 1 below, each component was blended, premixed with a stirrer, dispersed with a three-roll mill, and kneaded to prepare warpage correction materials. In addition, the compounding quantity in a table | surface shows a mass part. In addition, the sclerosing | hardenable component (B1), hardener component (A2-1), and film property provision polymer (C1) in a table | surface are the values as solid content.

The details of each component in Table 1 are as follows.
N-770: DIC's phenol novolac type epoxy Epicron N-770
EP-828: Mitsubishi Chemical Basic Liquid Type Epoxy “828”
EP1007: Basic solid epoxy “1007” manufactured by Mitsubishi Chemical
1B2PZ: Shikoku Kasei 1B2PZ 1-benzyl-2-phenylimidazole GMA: Kyoeisha Chemical Co., Ltd. Light Ester G Glycidyl methacrylate DPGDA: Daicel Ornex Co., Ltd. DPGDA Dipropylene glycol diacrylate HDDA: Daicel Ornex Co., Ltd. HDDA 1,6 -Hexanediol diacrylate
TPGDA: Daicel Ornex Co., Ltd. TPGDA Tripropylene glycol diacrylate TMPEOTA: Daicel Ornex Co., Ltd. TMPEOTA Trimethylolpropane ethoxytriacrylate DPHA: Daicel Ornex Co., Ltd. DPHA Dipentaerythritol hexaacrylate DCPA: Light acrylate manufactured by Kyoeisha Chemical Co., Ltd. DCPA
IRGACURE 819: IRGACURE 819 manufactured by BASF Japan
IRGACURE TPO: manufactured by BASF Japan IRGACURE TPO M52N: manufactured by Arkema Nanostrength M52N Y-XY block copolymer Silica: manufactured by Admatechs Admafine SO-E2 Blue colorant: C.I. I. Pigment Blue 15: 3
Yellow colorant: C.I. I. Pigment Yellow 147
Red color former: PALIOGEN RED K3580 manufactured by BASF Japan
In addition, the value of the hardening | curing agent component (A2-1) 1, curable component (B1) 1, and curable component (B1) 2 in a table | surface represents the value of solid content conversion.

<Production of dry film>
Of the warp correction materials obtained as described above, the warp correction materials 1, 2 and 5 were used for inkjet printing as they were. On the other hand, a dry film was produced using the warp straightening materials 3, 4, 6 and 7. First, the warpage correction material is appropriately diluted with methyl ethyl ketone, and then applied to a PET film (Toray, FB-50: 16 μm) using an applicator so that the film thickness after drying is 40 μm, and 30 at 80 ° C. Drying was carried out to obtain dry films 3, 4, 6 and 7.

<Measurement of volumetric shrinkage due to heating of warp straightener>
When the warp correction material prepared as described above is liquid at 25 ° C., add the warp correction material to a 10 mL graduated cylinder and leave it in a room at 25 ° C. for 6 hours. The density (ρ _0-H ) before heat curing was determined from the mass. On the other hand, when it is a solid at 25 ° C. like a dry film, the density of this solid is measured using a XS-205 analytical balance and density measurement kit “Solid and liquid density measurement kit” manufactured by METTLER TOLEDO, Using distilled water as a replacement liquid, the density (ρ _0-H ) before heat curing was calculated by the following formula.
ρ _0−H = (α × ρ _{H 2 O} ) / (α−β)
(In the above formula, ρ _0-H is the density of the solid before heat curing, α is the mass of the solid in the atmosphere, β is the mass of the solid in the substitution liquid, and ρ _{H 2 O} is distilled at the measurement temperature. Represents the density of water.)

  Subsequently, when the warp correction material is in a liquid state, about 2 g is filled in a PTFE container having an inner diameter of 49 mmφ, put into an oven heated to 100 ° C. for 60 minutes, and then put into an oven heated to 150 ° C. for 60 minutes. Cured. On the other hand, when it is solid at 25 ° C. like a dry film, the dry film is laminated so as to have a thickness of about 200 μm, and is put into an oven heated to 100 ° C. for 60 minutes, and then heated to 150 ° C. It was heat-cured by putting in the oven for 60 minutes. The density of the obtained cured product (hereinafter referred to as heat cured product) was measured using an analytical balance in the same manner as described above.

From the density (ρ _0-H ) of the warp correction material obtained as described above before thermosetting and the density ρ _H after thermosetting, the volume shrinkage ratio (α _H ) due to heating of the warp correction material is calculated by the following formula. Calculated.
α _H = (1−ρ _0−H / ρ _H ) × 100 (%)
The volumetric shrinkage (α _H ) due to heating of the warp correction material was as shown in Table 3.

<Measurement of volumetric shrinkage rate by irradiation of active energy ray of warp correction material>
When the warp correction material prepared as described above is liquid at 25 ° C., add the warp correction material to a 10 mL graduated cylinder and leave it in a room at 25 ° C. for 6 hours. The density (ρ _0-I ) before active energy ray irradiation was determined from the mass. On the other hand, when it is a solid at 25 ° C. like a dry film, the density of this solid is measured using a XS-205 analytical balance and density measurement kit “Solid and liquid density measurement kit” manufactured by METTLER TOLEDO, Using distilled water as a replacement liquid, the density (ρ _0-I ) before irradiation with active energy rays was calculated according to the following formula.
ρ _0−I = (α × ρ _H2O ) / (α−β)
(In the above formula, ρ _0-I is the density of the solid before irradiation with active energy rays, α is the mass of the solid in the atmosphere, β is the mass of the solid in the substitution liquid, and ρ _H2O is the measurement temperature. Represents the density of distilled water.)

Subsequently, when the warp correction material was liquid, it was cured by filling about 2 g in a PTFE container having an inner diameter of 49 mmφ and irradiating with an active energy ray (exposure amount: 5000 mJ / cm ² ) with a metal halide lamp. On the other hand, in the case of a solid at 25 ° C. like a dry film, the dry film is laminated so as to have a thickness of about 200 μm, and the active energy ray is irradiated with a metal halide lamp (exposure amount: 5000 mJ / cm ^2). ) To cure. The density (ρ _I ) of the cured product obtained by irradiation with active energy rays was measured using an analytical balance in the same manner as described above.

Based on the density (ρ _0-I ) of the warp correction material before irradiation with active energy rays and the density (ρ _I ) of the cured product after irradiation with active energy rays measured as described above, the activity of the warpage correction material is calculated according to the following formula. Volume contraction rate (α _I ) by energy ray irradiation was calculated.
α _I = (1−ρ _0−I / ρ _I ) × 100 (%)
The volume shrinkage ratio (α _I ) of the warp correction material by irradiation with active energy rays was as shown in Table 3 below.

<Preparation of pseudo wafer>
A 10 inch × 10 mm square semiconductor chip was obtained by dicing a 4-inch, 150 μm thick P-type silicon wafer having a 100 nm SiO ₂ film formed on one side of Canosis Co., Ltd. using a dicing apparatus. A temporary fixing film was placed on a SUS flat substrate, and the above-mentioned semiconductor chips were placed 5 × 5 in length and breadth so that the SiO ₂ surface was in contact with the temporarily fixing film and the distance between the semiconductor chips was 10 mm vertically and horizontally. A 100 mm × 100 mm square sheet-shaped semiconductor encapsulant was laminated thereon so that the center positions were approximately the same, and compression-molded at 150 ° C. for 1 hour using a heating type press crimping machine. As a semiconductor sealing material, a kneaded material having the following composition is placed between two 50 um cover films (Teijin Purex film), and the kneaded material is formed into a sheet by a flat plate pressing method. A 200 um sheet was used.

<Preparation of semiconductor encapsulant composition>
The following components were blended, heated at 70 ° C. for 4 minutes in a roll kneader, then heated at 120 ° C. for 6 minutes, and melt-kneaded for 10 minutes in total with reduced pressure (0.01 kg / cm ² ) to prepare a kneaded product.
・ Naphthalene type epoxy resin (Nippon Kayaku Co., Ltd. NC-7000) 30 parts ・ Bixylenol type epoxy resin (Mitsubishi Chemical YX-4000) 10 parts ・ Phenolic resin (The Dow Chemical Company DEN-431) ) 10 parts · Anthraquinone 2 parts · Carbon black (Carbon MA-100 manufactured by Mitsubishi Chemical Corporation) 10 parts · Spherical silica (Admafine SO-E2 manufactured by Admatechs) 500 parts · Silane coupling agent (KBM- manufactured by Shin-Etsu Chemical Co., Ltd.) 403) 2 parts 2-phenylimidazole (2PZ manufactured by Shikoku Chemicals Co., Ltd.) 2 parts

  Next, the temporarily fixed film was peeled off from the obtained laminate, and the back side was polished to obtain a pseudo wafer having a size of 100 mm × 100 mm square and a thickness of 200 μm.

  A positive rewiring forming resin composition having the following composition was applied by spin coating to the semiconductor circuit surface side of the obtained pseudo wafer, and prebaked by heating at 100 ° C. for 20 minutes. The thickness of the resin layer for forming a photosensitive rewiring formed on the pseudo wafer after pre-baking was 10 μm.

<Preparation of resin composition for rewiring formation>
First, 2,2-bis (3-amino-4-hydroxyphenyl) -propane was dissolved in N-methylpyrrolidone, and 0-4, while N-methylpyrrolidone of 4,4′-diphenyl ether dicarboxylic acid chloride was added dropwise. By reacting at 0 ° C., a polyhydroxyamide (polybenzoxazole precursor) resin having a weight average molecular weight of 1.3 × 10 ⁴ was synthesized.

Next, the following components containing a polyhydroxyamide resin were blended, and this mixed solution was subjected to pressure filtration using a 3 μm pore Teflon (registered trademark) filter to prepare a resin composition for rewiring.
・ Polyhydroxyamide resin (Z2) 100 parts ・ Phenol resin (DEN-431 manufactured by The Dow Chemical Company) ・ 10 parts ・ 1-Naphthoquinone-2-diazide-5-sulfonic acid ester (manufactured by AZ Electronic Materials) Product name TPPA528) 10 parts YXY-type block copolymer (Arkema Nano Strength M52N) 5 parts Silane coupling agent (Shin-Etsu Chemical KBM-403) 2 parts γ-butyrolactone 30 parts 120 parts of propylene glycol monomethyl ether acetate

Subsequently, using an HMW680GW (metal halide lamp) manufactured by ORC through a photomask in which a 100 um circular opening pattern is continuously formed vertically and horizontally at a pitch of 400 um, an exposure amount of 500 mJ / cm ² is used. The mold pattern was irradiated with light, and developed using a 2.38 wt% TMAH aqueous solution at 25 ° C. for 2 minutes to form a rewiring resin layer in which a round opening pattern was formed. Then, it baked at 200 degreeC for 1 hour, and cooled to room temperature. In the pseudo wafer thus obtained, warpage occurred such that the rewiring resin layer side became concave. The amount of warpage was a state in which the central portion was recessed by 6 mm with reference to a peripheral portion of 100 mm × 100 mm square.

  Application to the entire surface opposite to the circuit forming surface (surface on which the rewiring resin layer is formed) of the pseudo wafer using the warp correction materials 1, 2 and 5 obtained above by a piezo-type ink jet printer. A coating film was formed so that the subsequent thickness was 20 μm. At this time, active energy ray curing was performed with a high-pressure mercury lamp attached to the inkjet head immediately after printing (step 1), and further, heating in step 2 was performed to cure the coating film. In the warp correction material 2 whose conditions are described in Step 3 of Table 2, active energy rays were further irradiated. The curing reaction was as shown in Table 2.

  Further, each dry film 3, 4, 6 and 7 is bonded to the surface opposite to the circuit forming surface of the pseudo wafer by using a vacuum laminator, and then the combination of exposure conditions and heating conditions shown in Table 2 is used. The dry film was cured. In the case where the exposure process was performed before the heating process, the support film was peeled off after the exposure process, and the heating process was performed. The curing reaction was performed in the order of steps 1, 2, and 3 in Table 2.

In Table 2, the horizontal line (-) indicates that the process was not performed. UV1, UV2, UV3, UV4, and K1 indicate the following curing conditions, respectively.
UV1: Irradiation of droplets landed at 300 mJ / cm ² using a high-pressure mercury lamp attached to an ink-jet printing apparatus at 25 ° C. UV 2: 300 mJ / cm using a high-pressure mercury lamp attached to an ink-jet printing apparatus at 25 ° C. irradiating only a position where the semiconductor chip is embedded in ² UV3: under 25 ° C., the entire surface irradiated with 3000 mJ / cm ² using a metal halide lamp UV4: under 25 ° C., the entire surface of 2000 mJ / cm ² using a metal halide lamp Irradiation K1: Heating at 170 ° C for 1 hour

<Measurement of warpage of pseudo wafer>
The amount of warpage of the pseudo wafer on which the warp correction layer was formed as described above was measured. The amount of warpage was measured at 25 ° C. using a long caliper. When the warp of the central portion is ± 2 mm or less with reference to two points on the peripheral portion of the pseudo wafer, it was judged as good (◯). ± 2 to 3 mm was judged as Δ, and when it exceeded ± 3 mm, it was judged as defective (x). X Evaluation was not performed after that. The evaluation results were as shown in Table 3 below.

<Pseudo wafer reliability test>
Wafers with good results in the above warp evaluation were diced and cut into chip shapes, solder heat resistance (3 times at 260 ° C. for 10 seconds) for 10 samples per condition, and 500 heat cycles A reliability test was performed (a cycle of leaving at -40 ° C for 15 minutes and then leaving at 125 ° C for 15 minutes). Thereafter, the cross section of the pseudo wafer was observed with a microscope, and the boundary portion where the warp correction material was in close contact was observed to confirm the presence or absence of a defective product with peeling. When 10 pieces were peeled off, it passed (◯), and when one or more pieces peeled off, it was judged as unacceptable (x). The evaluation results were as shown in Table 3 below.

  As apparent from Table 3, the volume was shrunk by irradiation with active energy rays, and was formed using warp correction materials 1, 2, 3, and 4 that further shrunk by heating after irradiation with active energy rays. The FO-WLP pseudo-wafer provided with the warp correction layer had a high warp correction force, and was a good result with no occurrence of peeling failure even in the thermal history and reliability evaluation during subsequent semiconductor mounting.

  On the other hand, the FO-WLP pseudo-wafer having the warp correction layer formed using the warp correction materials 5 and 7 that shrinks in volume by irradiation with active energy rays but does not shrink in volume by further heating has a warp correction force. Was insufficient, and peeling occurred during the warp correction force, and peeling occurred in the thermal history and reliability evaluation during semiconductor mounting. In addition, the FO-WLP pseudo-wafer having a warp correction layer formed using a warp correction material 6 that shrinks in volume by heating but does not shrink in volume by irradiation with active energy rays has insufficient warp correction power. Met.

Claims (6)

  A fan-out type warpage correction material for a wafer level package, wherein the volume shrinks by irradiation with active energy rays and further shrinks by heating after irradiation with the active energy rays.   The warp correction material for a wafer-out type wafer level package according to claim 1, comprising a curable component that shrinks in volume when irradiated with active energy rays and a curable component that shrinks in volume when heated. When the volumetric shrinkage due to heating is α _H (%), the following formula (1):
0 <α _H ≦ 5 (1)
The warp straightening material for a fan-out type wafer level package according to claim 1 or 2, wherein When the volume shrinkage due to active energy ray irradiation is α _I (%), the following formula (2):
2 ≦ α _I ≦ 20 (2)
The warp straightening material for a fan-out type wafer level package according to claim 1 or 2, wherein The volume shrinkage due to the heating and the volume shrinkage due to active energy ray irradiation are expressed by the following formula (3):
α _H <α _I (3)
The warp straightening material for a fan-out type wafer level package according to claim 4, wherein   The fan according to any one of claims 1 to 5, wherein the fan is provided on a surface opposite to a surface on which the rewiring layer of the fan-out type wafer level package is provided, and the warp can be corrected by contraction. Warp correction material for out-type wafer level package.