JP2017529560A - 真空システム、特にeuvリソグラフィシステム、及び光学素子 - Google Patents
真空システム、特にeuvリソグラフィシステム、及び光学素子 Download PDFInfo
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
- G03F7/70841—Constructional issues related to vacuum environment, e.g. load-lock chamber
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B17/00—Methods preventing fouling
- B08B17/02—Preventing deposition of fouling or of dust
- B08B17/06—Preventing deposition of fouling or of dust by giving articles subject to fouling a special shape or arrangement
- B08B17/065—Preventing deposition of fouling or of dust by giving articles subject to fouling a special shape or arrangement the surface having a microscopic surface pattern to achieve the same effect as a lotus flower
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/0006—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 with means to keep optical surfaces clean, e.g. by preventing or removing dirt, stains, contamination, condensation
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/0816—Multilayer mirrors, i.e. having two or more reflecting layers
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/0891—Ultraviolet [UV] mirrors
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
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- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
- G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
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Abstract
Description
本願は、2014年8月13日付けの独国特許出願第10 2014 216 118.5号の優先権を主張し、その全開示を参照により本願の内容とする。
Uvdw=−B/d6 (1)
式中、Bは相互作用係数を示す。
Claims (17)
- 基板(19)と、
該基板(19)に施されたEUV放射線(6)を反射する多層コーティング(20)と
を備えた光学素子(14)であって、
汚染粒子(17)の付着を低減するために、表面構造(18)が前記多層コーティング(20)の表面(14a)に形成され、前記表面構造は、ウェブ(25)により相互に分離された細孔状凹部(24)を有し、該細孔状凹部(24)は、前記表面(14a)への付着を低減しようとする粒子(17)の直径(dp)よりも小さな直径(dV)を有することを特徴とする光学素子。 - 請求項1に記載の光学素子において、前記細孔状凹部(24)は、10nm未満の直径(dV)を有する光学素子。
- 請求項1又は2に記載の光学素子において、前記表面構造(18)のウェブ幅(B)が、前記表面構造(18)の前記細孔状凹部(24)の前記直径(dV)よりも小さい光学素子。
- 請求項1〜3のいずれか1項に記載の光学素子において、各細孔状凹部(24)の深さ(T)が、各細孔状凹部(24)の前記直径の半分(dV/2)と少なくとも同じ大きさである光学素子。
- 請求項1〜4のいずれか1項に記載の光学素子において、前記表面構造(18)は、少なくとも1つの周期細孔構造(23、23a〜23c)を有する光学素子。
- 請求項5に記載の光学素子において、前記少なくとも1つの周期細孔構造(23、23a〜23c)は、10nm未満の周期長(dS、dS3)を有する光学素子。
- 請求項5又は6に記載の光学素子において、前記表面構造(18)は、第1周期長(dS1)を有する第1周期細孔構造(23a)と、該第1周期細孔構造(23a)に施され前記第1周期細孔構造(23a)の前記周期長(dS1)よりも小さな第2周期長(dS2)を有する第2周期細孔構造(23b)とを有する光学素子。
- 請求項7に記載の光学素子において、前記第1周期長(dS1)は、前記第2周期長(dS2)の大きさの少なくとも5倍である光学素子。
- 真空システム、特にEUVリソグラフィシステム(1)であって、
真空環境(16)が形成された真空ハウジング(2、3、4)と、
前記真空環境(16)中で汚染粒子(17)に曝される表面(2a、3a、4a、9a、10a、13a、14a、15a)を有する少なくとも1つのコンポーネント(2、3、4、9、10、13、14、15)と
を備え、
前記汚染粒子(17)の付着を低減するために、表面構造(18)が前記表面(2a、3a、4a、9a、10a、13a、14a、15a)に形成され、前記表面構造は、ウェブ(25)により相互に分離された細孔状凹部(24)を有し、前記コンポーネントは、前記表面構造(18)を有し、前記真空ハウジングである真空システム。 - 請求項9に記載の真空システムにおいて、前記細孔状凹部(24)は、前記表面(14a)の付着を低減しようとする前記真空環境(16)中の前記汚染粒子(17)の直径(dp)よりも小さな直径(dV)を有する真空システム。
- 請求項9又は10に記載の真空システムにおいて、前記細孔状凹部(24)は、10nm未満の直径(dV)を有する真空システム。
- 請求項9〜11のいずれか1項に記載の真空システムにおいて、前記表面構造(18)のウェブ幅(B)が、前記表面構造(18)の前記細孔状凹部(24)の前記直径(dV)よりも小さい真空システム。
- 請求項9〜12のいずれか1項に記載の真空システムにおいて、各細孔状凹部(24)の深さ(T)が、各細孔状凹部(24)の前記直径の半分(dV/2)と少なくとも同じ大きさである真空システム。
- 請求項9〜13のいずれか1項に記載の真空システムにおいて、前記表面構造(18)は、少なくとも1つの周期細孔構造(23、23a〜23c)を有する真空システム。
- 請求項14に記載の真空システムにおいて、前記周期細孔構造(23、23a〜23c)は、10nm未満の周期長(dS、dS3)を有する真空システム。
- 請求項14又は15に記載の真空システムにおいて、前記表面構造(18)は、第1周期長(dS1)を有する第1周期細孔構造(23a)と、該第1周期細孔構造(23a)に施され前記第1周期細孔構造(23a)の前記周期長(dS1)よりも小さな第2周期長(dS2)を有する第2周期細孔構造(23b)とを有する真空システム。
- 請求項16に記載の真空システムにおいて、前記第1周期長(dS1)は、前記第2周期長(dS2)の大きさの少なくとも5倍である真空システム。
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Application Number | Priority Date | Filing Date | Title |
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DE102014216118.5 | 2014-08-13 | ||
DE102014216118.5A DE102014216118A1 (de) | 2014-08-13 | 2014-08-13 | Vakuum-System, insbesondere EUV-Lithographiesystem, und optisches Element |
PCT/EP2015/068066 WO2016023802A1 (en) | 2014-08-13 | 2015-08-05 | Vacuum system, in particular euv lithography system, and optical element |
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JP2017529560A true JP2017529560A (ja) | 2017-10-05 |
JP6620143B2 JP6620143B2 (ja) | 2019-12-11 |
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US (2) | US10241421B2 (ja) |
JP (1) | JP6620143B2 (ja) |
KR (1) | KR102424376B1 (ja) |
DE (1) | DE102014216118A1 (ja) |
TW (1) | TWI683125B (ja) |
WO (1) | WO2016023802A1 (ja) |
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CN105122139B (zh) * | 2013-01-28 | 2017-10-10 | Asml荷兰有限公司 | 用于光刻设备的投影系统、反射镜和辐射源 |
CN109564394B (zh) | 2016-07-29 | 2021-06-18 | Asml控股股份有限公司 | 膜组件和颗粒捕集器 |
DE102018110251B4 (de) * | 2018-04-27 | 2021-03-25 | Friedrich-Schiller-Universität Jena | Kontaminationsabweisender Spiegel und Verfahren zu dessen Herstellung |
JP7201461B2 (ja) * | 2019-01-30 | 2023-01-10 | デクセリアルズ株式会社 | 微小粒子配列用マスク |
KR102244638B1 (ko) * | 2019-04-18 | 2021-04-26 | 주식회사 에프에스티 | 오염방지 성능이 향상된 고차조화파를 이용한 극자외선 발생장치 |
DE102019213063A1 (de) * | 2019-08-30 | 2021-03-04 | Carl Zeiss Smt Gmbh | Optische Beugungskomponente |
JP7403271B2 (ja) * | 2019-10-10 | 2023-12-22 | ギガフォトン株式会社 | 極端紫外光集光ミラー、極端紫外光生成装置、及び電子デバイスの製造方法 |
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GB9916759D0 (en) * | 1999-07-17 | 1999-09-15 | Black & Decker Inc | Improvements in vacuum cleaners |
DE10138036A1 (de) * | 2001-08-03 | 2003-02-20 | Creavis Tech & Innovation Gmbh | Strukturierte Oberflächen mit Lotus-Effekt |
JP4095566B2 (ja) * | 2003-09-05 | 2008-06-04 | キヤノン株式会社 | 光学素子を評価する方法 |
DE102006044591A1 (de) * | 2006-09-19 | 2008-04-03 | Carl Zeiss Smt Ag | Optische Anordnung, insbesondere Projektionsbelichtungsanlage für die EUV-Lithographie, sowie reflektives optisches Element mit verminderter Kontamination |
JP2008288299A (ja) * | 2007-05-16 | 2008-11-27 | Nikon Corp | 多層膜反射鏡、照明装置、露光装置、及びデバイス製造方法 |
JP5028163B2 (ja) * | 2007-06-29 | 2012-09-19 | キヤノン株式会社 | 光学機器 |
WO2009059614A1 (en) | 2007-11-06 | 2009-05-14 | Carl Zeiss Smt Ag | Method for removing a contamination layer from an optical surface, method for generating a cleaning gas, and corresponding cleaning and cleaning... |
DE102009044462A1 (de) | 2009-11-06 | 2011-01-05 | Carl Zeiss Smt Ag | Optisches Element, Beleuchtungssystem und Projektionsbelichtungsanlage |
JP5538931B2 (ja) * | 2010-02-04 | 2014-07-02 | キヤノン株式会社 | 捕獲器、真空容器、処理装置、及びデバイス製造方法 |
DE102011075465B4 (de) | 2011-05-06 | 2013-09-12 | Carl Zeiss Smt Gmbh | Projektionsobjektiv einer mikrolithographischen Projektionsbelichtungsanlage |
JP2013127501A (ja) * | 2011-12-16 | 2013-06-27 | Sony Corp | 光学機器及び画像投射装置 |
US9599912B2 (en) * | 2012-05-21 | 2017-03-21 | Asml Netherlands B.V. | Lithographic apparatus |
US9759997B2 (en) * | 2015-12-17 | 2017-09-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Pellicle assembly and method for advanced lithography |
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KR102424376B1 (ko) | 2022-07-25 |
TW201614268A (en) | 2016-04-16 |
US20190196344A1 (en) | 2019-06-27 |
TWI683125B (zh) | 2020-01-21 |
US20170168402A1 (en) | 2017-06-15 |
DE102014216118A1 (de) | 2016-02-18 |
US10241421B2 (en) | 2019-03-26 |
JP6620143B2 (ja) | 2019-12-11 |
KR20170042579A (ko) | 2017-04-19 |
WO2016023802A1 (en) | 2016-02-18 |
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