JP2017522729A - 多端子直列電池 - Google Patents
多端子直列電池 Download PDFInfo
- Publication number
- JP2017522729A JP2017522729A JP2016575346A JP2016575346A JP2017522729A JP 2017522729 A JP2017522729 A JP 2017522729A JP 2016575346 A JP2016575346 A JP 2016575346A JP 2016575346 A JP2016575346 A JP 2016575346A JP 2017522729 A JP2017522729 A JP 2017522729A
- Authority
- JP
- Japan
- Prior art keywords
- type
- layer
- stack
- nanowires
- array
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002070 nanowire Substances 0.000 claims abstract description 101
- 238000013086 organic photovoltaic Methods 0.000 claims abstract description 32
- 239000000463 material Substances 0.000 claims description 51
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 48
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 31
- 238000000576 coating method Methods 0.000 claims description 28
- 239000000203 mixture Substances 0.000 claims description 27
- 239000011248 coating agent Substances 0.000 claims description 26
- 239000011787 zinc oxide Substances 0.000 claims description 24
- 229910052751 metal Inorganic materials 0.000 claims description 21
- 239000002184 metal Substances 0.000 claims description 21
- 229910052709 silver Inorganic materials 0.000 claims description 17
- 239000004332 silver Substances 0.000 claims description 17
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 claims description 14
- 230000015572 biosynthetic process Effects 0.000 claims description 14
- 229920001467 poly(styrenesulfonates) Polymers 0.000 claims description 14
- 229920000642 polymer Polymers 0.000 claims description 14
- 230000006798 recombination Effects 0.000 claims description 13
- 238000005215 recombination Methods 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 239000002800 charge carrier Substances 0.000 claims description 8
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 6
- 230000005540 biological transmission Effects 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229920002873 Polyethylenimine Polymers 0.000 claims description 4
- 229920000557 Nafion® Polymers 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- RXACYPFGPNTUNV-UHFFFAOYSA-N 9,9-dioctylfluorene Chemical compound C1=CC=C2C(CCCCCCCC)(CCCCCCCC)C3=CC=CC=C3C2=C1 RXACYPFGPNTUNV-UHFFFAOYSA-N 0.000 claims description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 125000002147 dimethylamino group Chemical group [H]C([H])([H])N(*)C([H])([H])[H] 0.000 claims description 2
- 230000008569 process Effects 0.000 claims description 2
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 2
- 239000000243 solution Substances 0.000 description 39
- 239000002042 Silver nanowire Substances 0.000 description 14
- 239000002904 solvent Substances 0.000 description 12
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 description 11
- MCEWYIDBDVPMES-UHFFFAOYSA-N [60]pcbm Chemical compound C123C(C4=C5C6=C7C8=C9C%10=C%11C%12=C%13C%14=C%15C%16=C%17C%18=C(C=%19C=%20C%18=C%18C%16=C%13C%13=C%11C9=C9C7=C(C=%20C9=C%13%18)C(C7=%19)=C96)C6=C%11C%17=C%15C%13=C%15C%14=C%12C%12=C%10C%10=C85)=C9C7=C6C2=C%11C%13=C2C%15=C%12C%10=C4C23C1(CCCC(=O)OC)C1=CC=CC=C1 MCEWYIDBDVPMES-UHFFFAOYSA-N 0.000 description 10
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 9
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 8
- 229920000144 PEDOT:PSS Polymers 0.000 description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 238000000429 assembly Methods 0.000 description 5
- 230000000712 assembly Effects 0.000 description 5
- 239000012669 liquid formulation Substances 0.000 description 4
- 238000005507 spraying Methods 0.000 description 4
- 238000007738 vacuum evaporation Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 3
- 238000000862 absorption spectrum Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 238000007641 inkjet printing Methods 0.000 description 3
- 230000031700 light absorption Effects 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000007764 slot die coating Methods 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- RFFLAFLAYFXFSW-UHFFFAOYSA-N 1,2-dichlorobenzene Chemical compound ClC1=CC=CC=C1Cl RFFLAFLAYFXFSW-UHFFFAOYSA-N 0.000 description 2
- QPUYECUOLPXSFR-UHFFFAOYSA-N 1-methylnaphthalene Chemical compound C1=CC=C2C(C)=CC=CC2=C1 QPUYECUOLPXSFR-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000007646 gravure printing Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 150000002902 organometallic compounds Chemical class 0.000 description 2
- 238000005325 percolation Methods 0.000 description 2
- 239000011112 polyethylene naphthalate Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- 238000010345 tape casting Methods 0.000 description 2
- 230000032258 transport Effects 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229920000742 Cotton Polymers 0.000 description 1
- LLQPHQFNMLZJMP-UHFFFAOYSA-N Fentrazamide Chemical compound N1=NN(C=2C(=CC=CC=2)Cl)C(=O)N1C(=O)N(CC)C1CCCCC1 LLQPHQFNMLZJMP-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 229920005603 alternating copolymer Polymers 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- ZFAKTZXUUNBLEB-UHFFFAOYSA-N dicyclohexylazanium;nitrite Chemical compound [O-]N=O.C1CCCCC1[NH2+]C1CCCCC1 ZFAKTZXUUNBLEB-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- HGVHMIAKUYLQLL-UHFFFAOYSA-N ethene;propane-1,2,3-triol Chemical compound C=C.OCC(O)CO HGVHMIAKUYLQLL-UHFFFAOYSA-N 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- MNCGMVDMOKPCSQ-UHFFFAOYSA-M sodium;2-phenylethenesulfonate Chemical compound [Na+].[O-]S(=O)(=O)C=CC1=CC=CC=C1 MNCGMVDMOKPCSQ-UHFFFAOYSA-M 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
- H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
- H10K30/83—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes comprising arrangements for extracting the current from the cell, e.g. metal finger grid systems to reduce the serial resistance of transparent electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/40—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
- H10K30/57—Photovoltaic [PV] devices comprising multiple junctions, e.g. tandem PV cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
- H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/211—Fullerenes, e.g. C60
- H10K85/215—Fullerenes, e.g. C60 comprising substituents, e.g. PCBM
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/115—Polyfluorene; Derivatives thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/141—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Nanotechnology (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
a)p型またはn型の第1被覆部と接触して第1活性層を置くこと、
b)上記第1被覆部の表面での、ナノワイヤのアレイを組み入れている第2被覆部の表面での形成のために適切な条件下で、ナノワイヤおよび任意的にp型またはn型材料を含む第1溶液を上記第1被覆部上に塗付すること、
c)任意的に、該第1溶液の材料とは異なるp型またはn型材料を含む第2溶液を、第3被覆部の形成のために適切な条件下で、工程b)において形成された該第2被覆部上に塗付すること、
を包含している。
スタック
‐ 第1外側層14、
‐ 第1活性層17
‐ ナノワイヤのアレイ22を組み入れている中間層20、
‐ 第2活性層23、および
‐ 第2外側層26
を備えうる。
ナノワイヤのアレイ
中間層
スタックの他の層
‐ P3HTおよびPCBMの混合物から成る第1活性層、
‐ 銀ナノワイヤのアレイを組み入れている且つZnOから成る中間層、および
‐ P3HTおよびPCBMの混合物から成る第2活性層、
を備えうる。
‐ P3HTおよびPCBMの混合物から成る第1活性層、
‐ 銀ナノワイヤのアレイを組み入れている且つPEDOTおよびPSSの混合物から成る中間層、および
‐ P3HTおよびPCBMの混合物から成る第2活性層、
を備えうる。
‐ P3HTおよびPCBMの混合物から成る第1活性層、
‐ PEDOTおよびPSSの混合物から成る追加の層、
‐ 銀ナノワイヤのアレイを組み入れている且つZnOから成る中間層、
‐ P3HTおよびPCBMの混合物から成る第2活性層、
を備えうる。
‐ P3HTおよびPCBMの混合物から成る第1活性層、
‐ ZnOから成る追加の層、
‐ 銀ナノワイヤのアレイを組み入れている且つPEDOTおよびPSSの混合物から成る中間層、
‐ P3HTおよびPCBMの混合物から成る第2活性層、
を備えうる。
製造方法
‐ 支持部8、
‐ 第1電極11、
‐ 第1外側層14、
‐ 第1活性層17、
‐ 第1被覆部63、
を備えうる。
光電池
− 好ましくは板の形状の、例えばガラスまたはプラスチック、好ましくはPEN及び/又はPETで作られた支持部8、
− 第1電極11、即ちより下方の電極、
− 上述の本発明に従う多層スタックから完全にまたは部分的に形成された集合体、および
− 第2電極29、即ちより上方の電極
で相互に隣接している一連の重畳された層を備えうる。
実施例
実施例1
実施例2
実施例3
8 支持部
11 第1電極
14 第1外側層
17 第1活性層
20 中間層
22 ナノワイヤのアレイ
23 第2活性層
26 第2外側層
29 第2電極
32 多接合型有機光電池
35 PINIP型多層組み立て
38 NIPIN型多層組み立て
41 追加の層
60 多層構造
63 第1被覆部
64 第2被覆部
66 第3被覆部
Claims (17)
- 多接合型有機光電池(32)を形成するために有用な多層スタック(5)であって、前記スタックは、第1活性層(17)および第2活性層(23)、及び前記第1活性層と第2活性層の間に挿入され且つ該第1及び第2層の少なくとも1つと接触するp型またはn型の中間層(20)を備え、前記中間層は、電気伝導性のナノワイヤのアレイ(22)を組み入れており、該多層スタックは、該第1活性層と該第2活性層の間に挿入され且つ該第1活性層とまたは該第2活性層と直接的に接触する追加の層(41)を備え、該追加の層は、該中間層を形成する材料とは異なるp型またはn型である、
上記スタック。 - 該ナノワイヤのアレイは、該中間層に平行に延在している、請求項1に記載のスタック。
- 該ナノワイヤのアレイは、前記第1および第2活性層と接触しない、請求項1または2に記載のスタック。
- 該中間層の厚さは、100nm以上且つ500nm以下である、請求項1〜3のいずれか1項に記載のスタック。
- 該ナノワイヤのアレイは、該追加の層と少なくとも部分的に接触している、請求項1〜4のいずれか1項に記載のスタック。
- 該ナノワイヤのアレイは、該中間層と該追加の層との間の境界に延在している、請求項1〜5のいずれか1項に記載のスタック。
- 該ナノワイヤのアレイは、非パーコレーション性である、請求項1〜6のいずれか1項に記載のスタック。
- 該中間層および該追加の層によって形成されたアセンブリは、100nm以上且つ500nm以下である厚さを有している、請求項1〜7のいずれか1項に記載のスタック。
- 該中間層および該追加の層によって形成された該アセンブリの伝達率は、50%を超えている、請求項1〜8のいずれか1項に記載のスタック。
- 該中間層および該追加の層によって形成された該アセンブリの表面抵抗率は、200Ω/sq未満、好ましくは100Ω/sq未満である、請求項1〜9のいずれか1項に記載のスタック。
- 該ナノワイヤは金属であり、好ましくは銀、銅、金、およびそれらの合金から選択された金属から成る、請求項1〜10のいずれか1項に記載のスタック。
- 該ナノワイヤは、10nm以上、好ましくは20nm以上の、且つ1000nm以下、好ましくは150nm以下の平均直径、および1μm以上、且つ500μm以下、好ましくは30μm以下の平均長を有する、請求項1〜11のいずれか1項に記載のスタック。
- 該中間層及び/又は該追加の層の材料は、
‐ p型ポリマーおよびp型酸化物、特に、ポリ(3,4-エチレンジオキシチオフェン)(PEDOT)とポリ(スチレンスルホン酸ナトリウム)(PSS)の混合物、ナフィオン(Nafion)、WO3、MoO3、V2O5およびNiO、およびそれらの混合物、
または、
‐ n型ポリマーおよびn型酸化物、特に、エトキシ化ポリエチレンイミン(PEIE)、(9,9-ビス(3’-(N,N-)ジメチルアミノ)プロピル)-2,7-フルオレン)と2,7-(9,9-ジオクチルフルオレン)の交互の重合体(PFN)、ZnO、酸化チタンTiOX(Xが1と2の間)、アルミニウムドープ酸化亜鉛(AZO)、インジウムドープ酸化亜鉛(IZO)、ガリウムドープ酸化亜鉛(GZO)およびこれらの混合物、
によって形成された群から選択される、請求項1〜12のいずれか1項に記載のスタック。 - スタックを製造する方法であって、
a)p型またはn型の第1被覆部(63)と接触して第1活性層を置くこと、
b)前記第1被覆部の表面での、ナノワイヤのアレイ(22)を組み入れている第2被覆部(64)の形成のために適切な条件下で、ナノワイヤおよび任意的にp型またはn型材料を含む第1溶液を、前記第1被覆部上に塗付すること、
c)任意的に、該第1溶液の材料とは異なるp型またはn型材料を含む第2溶液を、第3被覆部(66)の形成のために適切な条件下で、工程b)において形成された該第2被覆部上に塗付すること、
から成る工程を少なくとも包含し、
該第1被覆部は、一方で該追加の層を形成し、該第2被覆部、および任意的な該第3被覆部は、他方で請求項1〜13のいずれか1項に記載のスタックの該中間層を形成する、
上記方法。 - 工程b)において形成された該第2被覆部上に、または工程c)において形成された該第3被覆部上に、第2活性層を形成することから成る、工程c)の後に続く工程d)を包含している、請求項14に記載の方法。
- 請求項1〜13のいずれか1項に記載された、または請求項14または15のいずれか1つに記載された方法によって得られたスタックを備えている、多接合型の且つ特に直列型の光電池(32)。
- 該スタックの該ナノワイヤのアレイ、該中間層、および該追加の層は、荷電キャリア(45)の再結合の多層要素を形成する、請求項16に記載の光電池。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1455994A FR3023067B1 (fr) | 2014-06-26 | 2014-06-26 | Cellules tandem multifils |
FR1455994 | 2014-06-26 | ||
PCT/EP2015/064141 WO2015197635A1 (fr) | 2014-06-26 | 2015-06-23 | Cellules tandem multifils |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2017522729A true JP2017522729A (ja) | 2017-08-10 |
JP2017522729A5 JP2017522729A5 (ja) | 2019-10-03 |
JP6718384B2 JP6718384B2 (ja) | 2020-07-08 |
Family
ID=51298876
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016575346A Expired - Fee Related JP6718384B2 (ja) | 2014-06-26 | 2015-06-23 | 多端子直列電池 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20170207405A1 (ja) |
EP (1) | EP3161883B1 (ja) |
JP (1) | JP6718384B2 (ja) |
KR (1) | KR20170048323A (ja) |
FR (1) | FR3023067B1 (ja) |
WO (1) | WO2015197635A1 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102387760B1 (ko) * | 2016-08-26 | 2022-04-15 | 나징 테크놀로지 코포레이션 리미티드 | 발광 디바이스의 제조 방법, 발광 디바이스 및 하이브리드 발광 디바이스 |
FR3060205B1 (fr) * | 2016-12-13 | 2019-05-17 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Preparation d'un empilement multicouche pour un dispositif photovoltaique de type tandem comportant une unique couche de recombinaison |
FR3073088B1 (fr) * | 2017-10-26 | 2019-11-22 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Dispositif electronique organique ou hybride et son procede de fabrication |
WO2021011852A1 (en) * | 2019-07-17 | 2021-01-21 | North Carolina State University | Method of manufacturing all-solution-processed interconnection layer for multi-junction tandem organic solar cell |
KR102226999B1 (ko) * | 2020-07-01 | 2021-03-15 | 고려대학교 세종산학협력단 | 유무기 하이브리드 실리콘 박막 태양전지 및 이의 제조방법 |
CN111740018B (zh) * | 2020-07-07 | 2022-08-09 | 吉林大学 | 一种级联结构有机光电探测器及其制备方法 |
FR3113620A1 (fr) * | 2020-08-31 | 2022-03-04 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Dispositif multicouches comprenant une couche conductrice et des couches de protection, son procede de preparation et ses utilisations |
KR20230168467A (ko) * | 2022-06-07 | 2023-12-14 | 주성엔지니어링(주) | 탠덤형 태양 전지 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060027802A1 (en) * | 2004-08-05 | 2006-02-09 | Stephen Forrest | Stacked organic photosensitive devices |
JP2010109227A (ja) * | 2008-10-31 | 2010-05-13 | Konica Minolta Holdings Inc | 有機光電変換素子 |
JP2012507117A (ja) * | 2008-10-24 | 2012-03-22 | アプライド マテリアルズ インコーポレイテッド | Tcoに置き換わる磁性ナノ構造 |
JP2012134337A (ja) * | 2010-12-22 | 2012-07-12 | Konica Minolta Holdings Inc | 有機光電変換素子 |
JP2012227305A (ja) * | 2011-04-19 | 2012-11-15 | Hitachi Ltd | 蓄電機能を有するコンデンサ一体型太陽電池 |
JP2013161917A (ja) * | 2012-02-03 | 2013-08-19 | Konica Minolta Inc | タンデム型有機光電変換素子 |
JP2013254912A (ja) * | 2012-06-08 | 2013-12-19 | Konica Minolta Inc | 有機光電変換素子およびこれを用いた太陽電池 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1611484B1 (de) * | 2003-03-19 | 2021-11-10 | Heliatek GmbH | Photoaktives bauelement mit organischen schichten |
US20110180133A1 (en) * | 2008-10-24 | 2011-07-28 | Applied Materials, Inc. | Enhanced Silicon-TCO Interface in Thin Film Silicon Solar Cells Using Nickel Nanowires |
US20130240027A1 (en) * | 2010-06-07 | 2013-09-19 | Solarno, Inc. | Multijunction hybrid solar cell with parallel connection and nanomaterial charge collecting interlayers |
US9184319B2 (en) * | 2011-01-14 | 2015-11-10 | The Board Of Trustees Of The Leland Stanford Junior University | Multi-terminal multi-junction photovoltaic cells |
SG11201605513TA (en) * | 2014-01-31 | 2016-08-30 | Champ Great Int L Corp | Tandem organic photovoltaic devices that include a metallic nanostructure recombination layer |
-
2014
- 2014-06-26 FR FR1455994A patent/FR3023067B1/fr not_active Expired - Fee Related
-
2015
- 2015-06-23 JP JP2016575346A patent/JP6718384B2/ja not_active Expired - Fee Related
- 2015-06-23 US US15/321,341 patent/US20170207405A1/en not_active Abandoned
- 2015-06-23 EP EP15730799.2A patent/EP3161883B1/fr active Active
- 2015-06-23 WO PCT/EP2015/064141 patent/WO2015197635A1/fr active Application Filing
- 2015-06-23 KR KR1020177002214A patent/KR20170048323A/ko not_active Application Discontinuation
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060027802A1 (en) * | 2004-08-05 | 2006-02-09 | Stephen Forrest | Stacked organic photosensitive devices |
JP2012507117A (ja) * | 2008-10-24 | 2012-03-22 | アプライド マテリアルズ インコーポレイテッド | Tcoに置き換わる磁性ナノ構造 |
JP2010109227A (ja) * | 2008-10-31 | 2010-05-13 | Konica Minolta Holdings Inc | 有機光電変換素子 |
JP2012134337A (ja) * | 2010-12-22 | 2012-07-12 | Konica Minolta Holdings Inc | 有機光電変換素子 |
JP2012227305A (ja) * | 2011-04-19 | 2012-11-15 | Hitachi Ltd | 蓄電機能を有するコンデンサ一体型太陽電池 |
JP2013161917A (ja) * | 2012-02-03 | 2013-08-19 | Konica Minolta Inc | タンデム型有機光電変換素子 |
JP2013254912A (ja) * | 2012-06-08 | 2013-12-19 | Konica Minolta Inc | 有機光電変換素子およびこれを用いた太陽電池 |
Also Published As
Publication number | Publication date |
---|---|
EP3161883B1 (fr) | 2020-08-19 |
FR3023067B1 (fr) | 2017-10-20 |
JP6718384B2 (ja) | 2020-07-08 |
KR20170048323A (ko) | 2017-05-08 |
EP3161883A1 (fr) | 2017-05-03 |
US20170207405A1 (en) | 2017-07-20 |
FR3023067A1 (fr) | 2016-01-01 |
WO2015197635A1 (fr) | 2015-12-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6718384B2 (ja) | 多端子直列電池 | |
Xu et al. | Recent progress of electrode materials for flexible perovskite solar cells | |
Zhang et al. | Solution-processed transparent electrodes for emerging thin-film solar cells | |
Ajuria et al. | Insights on the working principles of flexible and efficient ITO-free organic solar cells based on solution processed Ag nanowire electrodes | |
Guo et al. | Graphene based materials: enhancing solar energy harvesting | |
Luo et al. | Recent advances in carbon nanotube utilizations in perovskite solar cells | |
TWI426619B (zh) | 太陽能電池與其異質接合結構的製造方法 | |
EP1964144A2 (en) | Tandem photovoltaic cells | |
US9882155B2 (en) | Organic electronic devices | |
JP2017522729A5 (ja) | ||
KR20190007812A (ko) | 하이브리드 정공 수송층을 포함하는 페로브스카이트 태양전지 및 그 제조방법 | |
TWI624939B (zh) | 包含金屬奈米結構複合層之串聯式有機光伏打裝置 | |
CN103403906A (zh) | 光伏电池 | |
KR101559098B1 (ko) | 태양 전지 전자 수송층의 배리어층으로 사용되는 풀러렌 입자들이 포함된 코어-쉘 구조 나노복합체, 이의 제조방법, 및 이를 포함하는 태양 전지 | |
Yu et al. | Heterojunction solar cells based on silicon and composite films of polyaniline and carbon nanotubes | |
Yu et al. | Efficiency boosting of inverted polymer solar cells with a polyvinylpyrrolidone-modified Al-doped ZnO electron transport layer | |
CN109935663B (zh) | 一种复合材料薄膜的制备方法与qled器件 | |
US20130263924A1 (en) | Organic Solar Cell Comprising Self-Assembled Organic/Inorganic Nanocomposite in Photoactive Layer, and Method for Preparing the Same. | |
JP6716581B2 (ja) | 太陽光発電糸および製造方法 | |
Angmo et al. | Indium tin oxide-free polymer solar cells: Toward commercial reality | |
Wang et al. | ITO-free semitransparent organic solar cells based on silver thin film electrodes | |
TW201251035A (en) | Method for forming an electrode layer with a low work function, and electrode layer | |
CN116801691A (zh) | 网络状体相接触的电极-界面层复合结构、其制法与应用 | |
CN117202677A (zh) | 钙钛矿太阳能电池及其制备方法、钝化层及光伏组件 | |
JPWO2012172878A1 (ja) | 有機薄膜太陽電池およびその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180613 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20180613 |
|
A871 | Explanation of circumstances concerning accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A871 Effective date: 20180613 |
|
A975 | Report on accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A971005 Effective date: 20180719 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20180803 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20181024 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190204 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20190409 |
|
A524 | Written submission of copy of amendment under article 19 pct |
Free format text: JAPANESE INTERMEDIATE CODE: A524 Effective date: 20190809 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20191023 |
|
A912 | Re-examination (zenchi) completed and case transferred to appeal board |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20191122 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20200612 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6718384 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
LAPS | Cancellation because of no payment of annual fees |