JP2017509246A - 温度補償部を備えたbaw共振器 - Google Patents
温度補償部を備えたbaw共振器 Download PDFInfo
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- JP2017509246A JP2017509246A JP2016555481A JP2016555481A JP2017509246A JP 2017509246 A JP2017509246 A JP 2017509246A JP 2016555481 A JP2016555481 A JP 2016555481A JP 2016555481 A JP2016555481 A JP 2016555481A JP 2017509246 A JP2017509246 A JP 2017509246A
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- baw resonator
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- 239000000463 material Substances 0.000 claims abstract description 34
- 230000008878 coupling Effects 0.000 claims abstract description 23
- 238000010168 coupling process Methods 0.000 claims abstract description 23
- 238000005859 coupling reaction Methods 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 239000010410 layer Substances 0.000 claims description 189
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 11
- 229910005793 GeO 2 Inorganic materials 0.000 claims description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 claims description 2
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000012044 organic layer Substances 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- BITYAPCSNKJESK-UHFFFAOYSA-N potassiosodium Chemical compound [Na].[K] BITYAPCSNKJESK-UHFFFAOYSA-N 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- 229910052727 yttrium Inorganic materials 0.000 claims description 2
- 239000011787 zinc oxide Substances 0.000 claims description 2
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- 230000002708 enhancing effect Effects 0.000 claims 1
- 230000009467 reduction Effects 0.000 abstract description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 238000006731 degradation reaction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910001385 heavy metal Inorganic materials 0.000 description 2
- 239000002346 layers by function Substances 0.000 description 2
- 238000010295 mobile communication Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 229910052706 scandium Inorganic materials 0.000 description 2
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000002775 capsule Substances 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 229910052701 rubidium Inorganic materials 0.000 description 1
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02102—Means for compensation or elimination of undesirable effects of temperature influence
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/175—Acoustic mirrors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
Description
ST 積層体
E1、E2 電極層
PS 圧電層
HI 高インピーダンス層
LI 低インピーダンス層
AS 音響ミラー
KS 補償層
SU 基板
T1、T2 フィルタ接続部
Claims (11)
- 基板(SU)と、
この上に載置された積層体(ST)と
を有するBAW共振器であって、前記積層体が、
・2つの電極層(E1、E2)と、
・前記電極層間に配置された圧電層(PS)と、
・下方の電極層(E1)と前記基板との間に配置されていて、かつ少なくとも2つのミラー層を具備する音響ミラー(AS)であって、高インピーダンス層(HI)と低インピーダンス層(LI)とが交互に配置されている、音響ミラー(AS)と、
・粘弾性特性の正の温度係数を有する材料を有し、前記音響ミラーと前記下方の電極層(E1)との間に配置されている補償層(KS)と
を具備し、
・前記ミラー層が、共になってブラッグミラーを形成し、
・最も上方の高インピーダンス層と前記下方の電極層との間の前記1つまたは複数の層の全厚が、λ/4の奇数の倍数に相当し、かつ、少なくとも3λ/4であり、
・λは、反射されるべき音波の波長である、
BAW共振器。 - 前記補償層(KS)は、SiO2またはGeO2から形成され、それぞれ純粋な形態で、または、F、PまたはB強化された形態で形成されている請求項1に記載のBAW共振器。
- 前記音響ミラー(AS)の最も上方の低インピーダンス層(LI)と、前記補償層(KS)とは、等しい材料から形成されている請求項1または2に記載のBAW共振器。
- 前記圧電層(PS)はAlNを含む請求項1〜3のいずれか1項に記載のBAW共振器。
- 少なくとも1つまたは全ての高インピーダンス層(HI)の材料は、W、Mo、Ta、Pt、Au、Ta2O5およびScから選択されている請求項1〜4のいずれか1項に記載のBAW共振器。
- 少なくとも1つまたは全ての低インピーダンス層(LI)の材料は、Si、SiO2、GeO2、Si3N4および有機層から選択されている請求項1〜5のいずれか1項に記載のBAW共振器。
- 前記下方の電極層(E1)は、Alよりも高い音響インピーダンスを有する材料から形成されている請求項1〜6のいずれか1項に記載のBAW共振器。
- 前記圧電層(PS)用に、AlNよりも強い圧電結合を有する材料が採用されている請求項1〜7のいずれか1項に記載のBAW共振器。
- 前記圧電層(PS)の材料として、ニオブ酸リチウム、タンタル酸リチウム、酸化亜鉛、PZTまたはニオブ酸ナトリウムカリウムが選択されている請求項8に記載のBAW共振器。
- 前記圧電層(PS)は、圧電結合を高めるためのドーピングを有する請求項1〜9のいずれか1項に記載のBAW共振器。
- 前記圧電層(PS)は、ドーピングされたAlNを含み、これには、ドーピング材料として、Y、Mg、Zr、TiまたはScが添加されている請求項10に記載のBAW共振器。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102014103229.2 | 2014-03-11 | ||
DE102014103229.2A DE102014103229B3 (de) | 2014-03-11 | 2014-03-11 | BAW-Resonator mit Temperaturkompensation |
PCT/EP2015/052965 WO2015135717A1 (de) | 2014-03-11 | 2015-02-12 | Baw-resonator mit temperaturkompensation |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2017509246A true JP2017509246A (ja) | 2017-03-30 |
Family
ID=52469054
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016555481A Pending JP2017509246A (ja) | 2014-03-11 | 2015-02-12 | 温度補償部を備えたbaw共振器 |
Country Status (4)
Country | Link |
---|---|
US (1) | US10164601B2 (ja) |
JP (1) | JP2017509246A (ja) |
DE (1) | DE102014103229B3 (ja) |
WO (1) | WO2015135717A1 (ja) |
Cited By (7)
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KR20180102971A (ko) * | 2017-03-08 | 2018-09-18 | 삼성전기주식회사 | 박막 벌크 음향 공진기 및 그의 제조 방법 |
JP2020014202A (ja) * | 2018-07-17 | 2020-01-23 | ツー−シックス デラウェア インコーポレイテッドII−VI Delaware,Inc. | 電極画定共振器 |
JP2020202564A (ja) * | 2019-06-12 | 2020-12-17 | ツー−シックス デラウェア インコーポレイテッドII−VI Delaware,Inc. | 電極画定された非サスペンデッド音響共振器 |
JP2021057805A (ja) * | 2019-09-30 | 2021-04-08 | 国立大学法人東北大学 | 弾性波デバイス |
KR20220126672A (ko) * | 2018-07-17 | 2022-09-16 | 투-식스 델라웨어, 인코포레이티드 | 전극 정의 공진기 |
US11738539B2 (en) | 2018-07-17 | 2023-08-29 | II-VI Delaware, Inc | Bonded substrate including polycrystalline diamond film |
US11750169B2 (en) | 2018-07-17 | 2023-09-05 | Ii-Vi Delaware, Inc. | Electrode-defined unsuspended acoustic resonator |
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JP6819005B2 (ja) * | 2016-12-29 | 2021-01-27 | 新日本無線株式会社 | バルク弾性波共振器 |
US11218132B2 (en) | 2017-12-12 | 2022-01-04 | Ii-Vi Delaware, Inc. | Acoustic resonator |
TWI721315B (zh) * | 2018-09-05 | 2021-03-11 | 立積電子股份有限公司 | 體聲波結構、體聲波裝置及其製造方法 |
US11664780B2 (en) * | 2019-05-14 | 2023-05-30 | Skyworks Solutions, Inc. | Rayleigh mode surface acoustic wave resonator |
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KR102435964B1 (ko) * | 2018-07-17 | 2022-08-25 | 투-식스 델라웨어, 인코포레이티드 | 전극 정의 공진기 |
KR20220126672A (ko) * | 2018-07-17 | 2022-09-16 | 투-식스 델라웨어, 인코포레이티드 | 전극 정의 공진기 |
US11738539B2 (en) | 2018-07-17 | 2023-08-29 | II-VI Delaware, Inc | Bonded substrate including polycrystalline diamond film |
KR20200142469A (ko) * | 2019-06-12 | 2020-12-22 | 투-식스 델라웨어, 인코포레이티드 | 전극-정의된 비현수된 어쿠스틱 공진기 |
JP7307032B2 (ja) | 2019-06-12 | 2023-07-11 | ツー-シックス デラウェア インコーポレイテッド | 電極画定された非サスペンデッド音響共振器 |
KR102451077B1 (ko) * | 2019-06-12 | 2022-10-06 | 투-식스 델라웨어, 인코포레이티드 | 전극-정의된 비현수된 어쿠스틱 공진기 |
JP2020202564A (ja) * | 2019-06-12 | 2020-12-17 | ツー−シックス デラウェア インコーポレイテッドII−VI Delaware,Inc. | 電極画定された非サスペンデッド音響共振器 |
JP2021057805A (ja) * | 2019-09-30 | 2021-04-08 | 国立大学法人東北大学 | 弾性波デバイス |
JP7378723B2 (ja) | 2019-09-30 | 2023-11-14 | 国立大学法人東北大学 | 弾性波デバイス |
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WO2015135717A1 (de) | 2015-09-17 |
DE102014103229B3 (de) | 2015-07-23 |
US20160365842A1 (en) | 2016-12-15 |
US10164601B2 (en) | 2018-12-25 |
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