JP2017227936A5 - MANUFACTURING METHOD FOR SUBSTRATE WITH MULTILAYER REFLECTIVE FILM, MANUFACTURING METHOD FOR REFLECTIVE MASK BLANK, AND MANUFACTURING METHOD FOR REFLECTIVE MASK - Google Patents

MANUFACTURING METHOD FOR SUBSTRATE WITH MULTILAYER REFLECTIVE FILM, MANUFACTURING METHOD FOR REFLECTIVE MASK BLANK, AND MANUFACTURING METHOD FOR REFLECTIVE MASK Download PDF

Info

Publication number
JP2017227936A5
JP2017227936A5 JP2017194485A JP2017194485A JP2017227936A5 JP 2017227936 A5 JP2017227936 A5 JP 2017227936A5 JP 2017194485 A JP2017194485 A JP 2017194485A JP 2017194485 A JP2017194485 A JP 2017194485A JP 2017227936 A5 JP2017227936 A5 JP 2017227936A5
Authority
JP
Japan
Prior art keywords
manufacturing
film
reference mark
mask blank
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2017194485A
Other languages
Japanese (ja)
Other versions
JP6561099B2 (en
JP2017227936A (en
Filing date
Publication date
Application filed filed Critical
Publication of JP2017227936A publication Critical patent/JP2017227936A/en
Publication of JP2017227936A5 publication Critical patent/JP2017227936A5/en
Application granted granted Critical
Publication of JP6561099B2 publication Critical patent/JP6561099B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Claims (14)

基板上にEUV光を反射する多層反射膜が形成されている多層反射膜付き基板の製造方法であって、
前記多層反射膜付き基板に、欠陥情報における欠陥位置の基準となる基準マークが形成されており、
前記多層反射膜付き基板に対して欠陥検査を行い、前記基準マークを基準とした欠陥情報を取得し、
電子線描画機の基準座標に変換可能な座標計測器で前記基準マークの形成位置を特定し、
前記基準マークを形成した前記多層反射膜付き基板と、前記基準マークの形成位置情報及び前記欠陥情報とを対応付けることを特徴とする多層反射膜付き基板の製造方法。 A method of manufacturing a substrate with a multilayer reflective film in which a multilayer reflective film that reflects EUV light is formed on the substrate,
A reference mark serving as a reference for the defect position in the defect information is formed on the substrate with the multilayer reflective film,
Perform defect inspection on the substrate with the multilayer reflective film, obtain defect information based on the reference mark,
Identify the formation position of the reference mark with a coordinate measuring instrument that can be converted to the reference coordinate of an electron beam drawing machine ,
A method for manufacturing a substrate with a multilayer reflective film, wherein the substrate with a multilayer reflective film on which the reference mark is formed is associated with the formation position information of the reference mark and the defect information . 前記多層反射膜上に保護膜が形成されていることを特徴とする請求項１に記載の多層反射膜付き基板の製造方法。The method for manufacturing a substrate with a multilayer reflective film according to claim 1, wherein a protective film is formed on the multilayer reflective film. 前記基準マークは、前記多層反射膜に形成されていることを特徴とする請求項１又は２に記載の多層反射膜付き基板の製造方法。The method for manufacturing a substrate with a multilayer reflective film according to claim 1, wherein the reference mark is formed on the multilayer reflective film. 前記基準マークは、前記保護膜に形成されていることを特徴とする請求項２又は３に記載の多層反射膜付き基板の製造方法。4. The method for manufacturing a substrate with a multilayer reflective film according to claim 2, wherein the reference mark is formed on the protective film. 請求項１乃至４のいずれかに記載の多層反射膜付き基板の製造方法によって製造された前記基準マークを形成した前記多層反射膜付き基板における前記多層反射膜上に、EUV光を吸収する吸収体膜が形成されている反射型マスクブランクと、前記基準マークの形成位置情報とを対応付けることを特徴とする反射型マスクブランクの製造方法。 The absorber which absorbs EUV light on the said multilayer reflective film in the said multilayer reflective film substrate in which the said reference mark manufactured by the manufacturing method of the multilayer reflective film provided substrate in any one of Claims 1 thru | or 4 was formed A method of manufacturing a reflective mask blank, comprising associating a reflective mask blank on which a film is formed with information on a formation position of the reference mark. 基板上にEUV光を反射する多層反射膜と、前記多層反射膜上にEUV光を吸収する吸収体膜が形成されている反射型マスクブランクの製造方法であって、
前記反射型マスクブランクに、欠陥情報における欠陥位置の基準となる基準マークが形成されており、
前記反射型マスクブランクに対して欠陥検査を行い、前記基準マークを基準とした欠陥情報を取得し、
電子線描画機の基準座標に変換可能な座標計測器で前記基準マークの形成位置を特定し、
前記基準マークを形成した前記反射型マスクブランクと、前記基準マークの形成位置情報及び前記欠陥情報とを対応付けることを特徴とする反射型マスクブランクの製造方法。 A method of manufacturing a reflective mask blank in which a multilayer reflective film that reflects EUV light on a substrate and an absorber film that absorbs EUV light is formed on the multilayer reflective film ,
A reference mark serving as a reference for a defect position in defect information is formed on the reflective mask blank,
Perform defect inspection on the reflective mask blank, obtain defect information with reference to the reference mark,
Identify the formation position of the reference mark with a coordinate measuring instrument that can be converted to the reference coordinate of an electron beam drawing machine ,
A method of manufacturing a reflective mask blank, comprising associating the reflective mask blank on which the reference mark is formed with the formation position information of the reference mark and the defect information . 前記多層反射膜と吸収体膜の間に保護膜が形成されていることを特徴とする請求項６に記載の反射型マスクブランクの製造方法。The method for manufacturing a reflective mask blank according to claim 6, wherein a protective film is formed between the multilayer reflective film and the absorber film. 前記基準マークは、前記多層反射膜に形成されていることを特徴とする請求項６又は７に記載の反射型マスクブランクの製造方法。8. The method of manufacturing a reflective mask blank according to claim 6, wherein the reference mark is formed on the multilayer reflective film. 前記基準マークは、前記保護膜に形成されていることを特徴とする請求項７又は８に記載の反射型マスクブランクの製造方法。The method for manufacturing a reflective mask blank according to claim 7 or 8, wherein the reference mark is formed on the protective film. 前記基準マークは、前記吸収体膜に形成されていることを特徴とする請求項６乃至９のいずれかに記載の反射型マスクブランクの製造方法。The method for manufacturing a reflective mask blank according to claim 6, wherein the reference mark is formed on the absorber film. 前記基準マークは、前記保護膜が露出するように前記吸収体膜を除去して形成されていることを特徴とする請求項１０に記載の反射型マスクブランクの製造方法。The method of manufacturing a reflective mask blank according to claim 10, wherein the reference mark is formed by removing the absorber film so that the protective film is exposed. 前記基準マークは、前記吸収体膜を途中まで除去して形成されていることを特徴とする請求項１０に記載の反射型マスクブランクの製造方法。The method of manufacturing a reflective mask blank according to claim 10, wherein the reference mark is formed by removing the absorber film partway. 前記基準マークは、前記吸収体膜及び前記保護膜を除去して前記多層反射膜が露出するように形成されていることを特徴とする請求項１０に記載の反射型マスクブランクの製造方法。11. The method of manufacturing a reflective mask blank according to claim 10, wherein the reference mark is formed so that the multilayer reflective film is exposed by removing the absorber film and the protective film. 請求項５乃至１３のいずれかに記載の反射型マスクブランクの製造方法によって製造された反射型マスクブランクにおける前記吸収体膜を前記欠陥情報に基づいてパターニングすることを特徴とする反射型マスクの製造方法。14. A reflective mask manufacturing method comprising: patterning the absorber film in a reflective mask blank manufactured by the reflective mask blank manufacturing method according to claim 5 based on the defect information. Method.
JP2017194485A 2012-02-10 2017-10-04 MANUFACTURING METHOD FOR SUBSTRATE WITH MULTILAYER REFLECTIVE FILM, MANUFACTURING METHOD FOR REFLECTIVE MASK BLANK Active JP6561099B2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012027638 2012-02-10
JP2012027638 2012-02-10

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2012289264A Division JP6460617B2 (en) 2012-02-10 2012-12-30 Reflective mask blank, reflective mask manufacturing method, and reflective mask blank manufacturing method

Publications (3)

Publication Number Publication Date
JP2017227936A JP2017227936A (en) 2017-12-28
JP2017227936A5 true JP2017227936A5 (en) 2018-02-15
JP6561099B2 JP6561099B2 (en) 2019-08-14

Family

ID=60891708

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017194485A Active JP6561099B2 (en) 2012-02-10 2017-10-04 MANUFACTURING METHOD FOR SUBSTRATE WITH MULTILAYER REFLECTIVE FILM, MANUFACTURING METHOD FOR REFLECTIVE MASK BLANK

Country Status (1)

Country Link
JP (1) JP6561099B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11531264B2 (en) * 2018-05-25 2022-12-20 Hoya Corporation Reflective mask blank, reflective mask and manufacturing method thereof, and semiconductor device manufacturing method

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7171637B2 (en) * 2005-01-14 2007-01-30 Intel Corporation Translation generation for a mask pattern
JP2010219445A (en) * 2009-03-18 2010-09-30 Nuflare Technology Inc Charged particle beam drawing method, position detecting method for reference mark for charged particle beam drawing, and charged particle beam drawing device
JP2010272553A (en) * 2009-05-19 2010-12-02 Renesas Electronics Corp Defect inspection device and defect inspection method for mask blank, and method of manufacturing semiconductor device
JP5425593B2 (en) * 2009-11-13 2014-02-26 ルネサスエレクトロニクス株式会社 EUV mask defect inspection method, EUV mask manufacturing method, EUV mask inspection apparatus, and semiconductor device manufacturing method
JP5502450B2 (en) * 2009-12-21 2014-05-28 株式会社東芝 REFLECTIVE EXPOSURE MASK, REFLECTIVE EXPOSURE MASK INSPECTION METHOD, AND REFLECTIVE EXPOSURE MASK CLEANING METHOD
JP5841710B2 (en) * 2010-03-17 2016-01-13 株式会社ニューフレアテクノロジー Charged particle beam drawing apparatus and charged particle beam drawing method
JP5471835B2 (en) * 2010-05-26 2014-04-16 大日本印刷株式会社 Method of correcting phase defect of reflective mask and method of manufacturing reflective mask
JP6460617B2 (en) * 2012-02-10 2019-01-30 Hoya株式会社 Reflective mask blank, reflective mask manufacturing method, and reflective mask blank manufacturing method

Similar Documents

Publication Publication Date Title
JP2013179270A5 (en)
JP2017227933A5 (en) Reflective mask blank and method for manufacturing the same, and reflective mask and method for manufacturing the same
JP2015536037A5 (en)
JP2015532713A5 (en)
SG11201807712YA (en) Method for manufacturing reflective mask blank, reflective mask blank, method for manufacturing reflective mask, reflective mask, and method for manufacturing semiconductor device
JP2014186333A5 (en) Transmission mask blank, transmission mask, and method for manufacturing semiconductor device
GB2551458A (en) 3D Laser projection, scanning and object tracking
JP2009002931A5 (en)
TW201612621A (en) Reflective mask blank, method for manufacturing reflective mask blank, reflective mask, and method for manufacturing semiconductor device
JP2015532733A5 (en)
JP2013134435A5 (en)
BR112015016385A2 (en) lithographic fabrication of an object by volume with improved spatial resolution
JP2009283970A5 (en)
JP2015212826A5 (en)
JP2010039352A5 (en)
BR112014032141A2 (en) security element, banknote, method of forming a security element, printing method and method of manufacturing the security element, device, document or banknote
WO2012125581A3 (en) Method and apparatus for inspecting a reflective lithographic mask blank and improving mask quality
JP2015191218A5 (en)
EP2863258A3 (en) Photomask blank and method for manufacturing photomask blank
JP2015528132A5 (en)
JP2008036918A5 (en)
JP2015222448A5 (en)
JP2017026701A5 (en)
JP2015212720A5 (en)
JP2010198103A5 (en)