JP2017224734A - Cleaning method and cleaning device - Google Patents

Cleaning method and cleaning device Download PDF

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JP2017224734A
JP2017224734A JP2016119268A JP2016119268A JP2017224734A JP 2017224734 A JP2017224734 A JP 2017224734A JP 2016119268 A JP2016119268 A JP 2016119268A JP 2016119268 A JP2016119268 A JP 2016119268A JP 2017224734 A JP2017224734 A JP 2017224734A
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cleaned
members
processing liquid
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正広 斉藤
Masahiro Saito
正広 斉藤
研一 中澤
Kenichi Nakazawa
研一 中澤
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Dalton Corp
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching

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Abstract

PROBLEM TO BE SOLVED: To provide a cleaning method and a cleaning device which can bring about desired removal of an object to be cleaned from a member to be cleaned better than before.SOLUTION: A cleaning method and a cleaning device removes objects to be cleaned, formed in multiple members to be cleaned, by jetting process liquid from a process liquid injection port in a state where the multiple members to be cleaned and the process liquid injection port are immersed in the process liquid, and in a state where any one of relative horizontal reciprocation or vertical reciprocation of the multiple members to be cleaned and process liquid injection port has been done, and discharges the objects to be cleaned thus removed, together with the process liquid in which the multiple members to be cleaned had been immersed, and the process liquid jetted from the process liquid injection port.SELECTED DRAWING: Figure 1

Description

本発明は、半導体基板等の被洗浄部材の洗浄方法及び洗浄装置に関する。   The present invention relates to a cleaning method and a cleaning apparatus for a member to be cleaned such as a semiconductor substrate.

例えば半導体基板上に金属薄膜パターンを作製する方法の一つにリフトオフ法がある。該リフトオフ法では、半導体基板上にレジストパターンを形成した後、さらに金属薄膜を形成し、その後、半導体基板上に形成されたレジストパターンと、そのレジストパターン上に形成された金属薄膜とを除去する洗浄処理を行うことによって金属薄膜パターンを作製する。   For example, one method for producing a metal thin film pattern on a semiconductor substrate is a lift-off method. In the lift-off method, after forming a resist pattern on a semiconductor substrate, a metal thin film is further formed, and then the resist pattern formed on the semiconductor substrate and the metal thin film formed on the resist pattern are removed. A metal thin film pattern is produced by performing a cleaning process.

このようなリフトオフ法における洗浄処理において、複数の半導体基板を同時に洗浄処理することができ、なお且つ、該洗浄処理の際に除去した金属薄膜が半導体基板に再付着したりするという事態を回避することを可能とするべく、複数の被洗浄部材を処理液に沈めるための処理槽と、処理槽の上部に配置され、処理槽内に配置された複数の被洗浄部材に向けて処理液を噴射させるための噴射手段と、処理槽の下部に配置され、処理槽内の処理液を排出するための排出手段とを有し、複数の被洗浄部材を処理槽内の処理液に沈めた状態を保持しながら、噴射手段から処理液を噴射するとともに、排出手段から処理液を排出するように制御する洗浄装置が開示されている(特許文献1参照)。   In such a lift-off cleaning process, a plurality of semiconductor substrates can be cleaned at the same time, and a situation in which the metal thin film removed during the cleaning process is reattached to the semiconductor substrate is avoided. In order to make it possible, a processing tank for immersing a plurality of members to be cleaned in a processing liquid and an upper portion of the processing tank and injecting the processing liquid toward the plurality of members to be cleaned arranged in the processing tank And a discharge means for discharging the processing liquid in the processing tank, and a plurality of members to be cleaned are submerged in the processing liquid in the processing tank. A cleaning device is disclosed that controls to eject the processing liquid from the ejection unit and to discharge the processing liquid from the ejection unit while holding (see Patent Document 1).

特開2014−239141号公報JP 2014-239141 A

特許文献1に開示される洗浄方法によれば、噴射手段からの処理液の噴射と排出手段からの処理液の排出とを、複数の被洗浄部材を処理液に沈めた状態を保持しながら行うので、噴射された処理液によって被洗浄部材から除去された被洗浄物(不要物)を、被洗浄部材を沈めていた処理液と噴射された処理液とともに排出させることができ、被洗浄物が浮遊した状態で被洗浄部材に再付着するのを防ぐことを可能にするとともに、枚葉毎行う洗浄方法とは異なり、複数の被洗浄部材をまとめて処理できるので、処理能力を高めることを可能とする。   According to the cleaning method disclosed in Patent Document 1, the treatment liquid is ejected from the ejection means and the treatment liquid is ejected from the discharge means while maintaining a state in which a plurality of members to be cleaned are submerged in the treatment liquid. Therefore, the object to be cleaned (unnecessary object) removed from the member to be cleaned by the sprayed processing liquid can be discharged together with the processing liquid that sunk the member to be cleaned and the sprayed processing liquid. It is possible to prevent reattachment to the member to be cleaned in a floating state, and it is possible to process multiple members to be cleaned at a time unlike the cleaning method for each single wafer, thus increasing the processing capacity. And

ところで、求められる製品の多様化が進む現状において、半導体基板やレジスト並びに金属薄膜などを構成する材料や、半導体基板上に形成される金属薄膜パターンも多岐にわたる傾向にあり、構成材料や金属薄膜パターンが異なるものになっても、より良好な被洗浄物の除去をもたらすことを可能とする洗浄方法及び洗浄装置の更なる要望がある。   By the way, in the present situation where the diversification of required products is progressing, the materials constituting the semiconductor substrate, resist and metal thin film, and the metal thin film pattern formed on the semiconductor substrate tend to be diverse. There is a further need for a cleaning method and apparatus that can provide better removal of the objects to be cleaned even if they are different.

構成材料や金属薄膜パターンが異なるものとなると、半導体基板に対して、レジスト部及び該レジスト部上の金属薄膜の除去をもたらすレジスト部及び金属薄膜の剥離が、断片的な細片状に進行する場合や、連続的なシート状に進行する場合など、異なる態様にて進行することとなり、その剥離態様に応じて剥離に必要とされる力も異なるものとなる。   When the constituent material and the metal thin film pattern are different, the resist portion and the metal thin film are peeled from the semiconductor substrate in a piecewise strip shape, which causes the resist portion and the metal thin film on the resist portion to be removed. In some cases, such as when it progresses in a continuous sheet form, it progresses in different modes, and the force required for peeling differs depending on the peeling mode.

被洗浄部材となる複数の半導体基板を処理液に沈めた状態で、該複数の半導体基板に向けて処理液を噴射して、各半導体基板上のレジスト部及び該レジスト部上の金属薄膜の除去を行う装置において、構成材料や金属薄膜パターンが異なるものになっても、所望の除去をもたらすことを可能とするためには、各半導体基板上のレジスト部及び該レジスト部上の金属薄膜に対して、より確実に所定の高圧の力を均等に作用させることの実現が一課題となる。   In a state where a plurality of semiconductor substrates to be cleaned are submerged in the processing liquid, the processing liquid is sprayed toward the plurality of semiconductor substrates to remove the resist portion on each semiconductor substrate and the metal thin film on the resist portion. In order to make it possible to achieve desired removal even if the constituent material and the metal thin film pattern are different in the apparatus for performing the process, the resist portion on each semiconductor substrate and the metal thin film on the resist portion are provided. Thus, it is an issue to realize a certain high-pressure force evenly and reliably.

このような課題を解決するための一手段として、隣接する半導体基板間の各スペースに、より確実に所定の高圧の力を均等にもたらすべく、処理液を噴射するノズルの処理液噴射口を、隣接する半導体基板間の各スペースのそれぞれに対して配置することが考えられる。   As a means for solving such a problem, a processing liquid injection port of a nozzle for injecting a processing liquid is more reliably and uniformly provided in each space between adjacent semiconductor substrates, It is conceivable to arrange each of the spaces between adjacent semiconductor substrates.

しかしながら、このような対応を行う場合、隣接する半導体基板間のスペースの大きさによっては、該スペースの大きさに応じた特注的なノズルの設計や製造の必要性が生じることになり、コスト性や量産性が課題となる。   However, when such measures are taken, depending on the size of the space between adjacent semiconductor substrates, it may be necessary to design and manufacture a custom nozzle according to the size of the space. And mass productivity is an issue.

本発明は、上記課題に鑑み、複数の半導体基板などの被洗浄部材を処理液に沈めた状態で、複数の被洗浄部材に向けて処理液を噴射して、被洗浄部材を構成する材料や該被洗浄部材上に形成される被洗浄物の形態にかかわらず、より確実に被洗浄物の所望の除去をもたらすことが可能で且つコスト性にも優れた、洗浄方法及び洗浄装置を提供することを目的とする。   In view of the above problems, the present invention is directed to a material constituting the member to be cleaned by spraying the processing liquid toward the member to be cleaned in a state where the member to be cleaned such as a plurality of semiconductor substrates is submerged in the processing solution. Provided is a cleaning method and a cleaning apparatus which can bring about the desired removal of the object to be cleaned more reliably and are excellent in cost regardless of the form of the object to be cleaned formed on the member to be cleaned. For the purpose.

請求項1の発明によれば、隣接する被洗浄部材が所定間隔を置いて並置された複数の被洗浄部材を、鉛直方向直立姿勢にて処理液中に沈めた状態で配置する被洗浄部材配置ステップと、
前記複数の被洗浄部材に向けて処理液を噴射する処理液噴射手段の処理液噴射口を、処理液中に沈めて前記複数の被洗浄部材の上方に配置する処理液噴射口配置ステップと、
前記複数の被洗浄部材と前記処理液噴射口とが処理液に沈められた状態が保持されながら、前記複数の被洗浄部材に向けて前記処理液噴射口から処理液を噴射しつつ、前記複数の被洗浄部材を沈めていた処理液と前記処理液噴射口から噴射された処理液との排出を行うことで、前記複数の被洗浄部材に形成されている被洗浄物を除去する洗浄ステップとを有し、
前記洗浄ステップは、処理液中での前記複数の被洗浄部材と前記処理液噴射口との互いに対する相対的な水平方向往復動及び鉛直方向往復動の少なくともいずれか一方の往復動を周期的にもたらす往復動ステップを有し、前記洗浄ステップにおける前記複数の被洗浄部材に向けての処理液の噴射は、前記相対的な水平方向往復動及び鉛直方向往復動の少なくともいずれか一方の往復動がなされている状態で行なわれる、洗浄方法が提供される。
According to the first aspect of the present invention, the to-be-cleaned member arrangement in which a plurality of to-be-cleaned members arranged adjacent to each other at a predetermined interval are submerged in the processing liquid in a vertically upright posture. Steps,
A treatment liquid ejection port disposing step in which a treatment liquid ejection port of a treatment liquid ejection unit that ejects a treatment liquid toward the plurality of members to be cleaned is submerged in the treatment liquid and disposed above the plurality of members to be cleaned;
While the state where the plurality of members to be cleaned and the processing liquid ejection ports are submerged in the processing liquid is maintained, the plurality of the plurality of members to be cleaned are ejected from the processing liquid ejection ports toward the plurality of members to be cleaned. A cleaning step of removing the object to be cleaned formed on the plurality of members to be cleaned by discharging the processing liquid that has sunk the member to be cleaned and the processing liquid ejected from the processing liquid ejection port; Have
The cleaning step periodically performs reciprocation of at least one of a horizontal reciprocation and a vertical reciprocation of the plurality of members to be cleaned and the treatment liquid ejection port relative to each other in the treatment liquid. A reciprocating step to be provided, and the jetting of the processing liquid toward the plurality of members to be cleaned in the cleaning step is performed by reciprocating at least one of the relative horizontal reciprocating motion and the vertical reciprocating motion. A cleaning method is provided that is performed as is.

すなわち、請求項1の発明では、複数の被洗浄部材に形成されている被洗浄物を除去して洗浄する際、複数の被洗浄部材と処理液噴射口とが処理液に沈められた状態が保持されながら、複数の被洗浄部材に向けて処理液噴射口から処理液を噴射しつつ、複数の被洗浄部材を沈めていた処理液と処理液噴射口から噴射された処理液とを排出するようにすることで、これらの処理液とともに、除去された被洗浄物を排出するようにすることができ、よって、液中を浮遊する除去された被洗浄物が被洗浄部材への再付着してしまうというような事態を抑制することができ、より良好な被洗浄部材の洗浄を可能とする。   That is, according to the first aspect of the present invention, when the object to be cleaned formed on the plurality of members to be cleaned is removed and cleaned, the plurality of members to be cleaned and the processing liquid injection port are submerged in the processing liquid. While being held, the processing liquid is ejected from the processing liquid ejection port toward the plurality of members to be cleaned, and the processing liquid that has sunk the plurality of members to be cleaned and the processing liquid ejected from the processing liquid ejection port are discharged. By doing so, it is possible to discharge the object to be cleaned together with these processing liquids, so that the object to be cleaned floating in the liquid is reattached to the member to be cleaned. It is possible to suppress such a situation that the cleaning member can be cleaned better.

さらに、請求項1の発明では、洗浄ステップにおける複数の被洗浄部材に向けての処理液の噴射を、処理液中での複数の被洗浄部材と処理液噴射口との互いに対する相対的な水平方向往復動及び鉛直方向往復動の少なくともいずれか一方の往復動がなされている状態で行うようにすることで、処理液噴射手段となるノズルの特注的な設計や製造の必要性もなく、より均等で強力(高圧)な処理液の液中噴流を、複数の被洗浄部材に向けてもたらすことができ、被洗浄部材を構成する材料や該被洗浄部材上に形成される被洗浄物の形態にかかわらず、より良好に被洗浄物の所望の除去をもたらすことを可能とし、また、コスト性にも優れた洗浄方法の提供を可能とする。   Further, in the first aspect of the present invention, the spray of the processing liquid toward the plurality of members to be cleaned in the cleaning step is performed with respect to the relative horizontal relative to each other of the plurality of members to be cleaned and the processing liquid injection port in the processing liquid. By performing it in a state where at least one of the reciprocating motion in the direction and the reciprocating motion in the vertical direction is made, there is no need for custom design and manufacturing of the nozzle that becomes the processing liquid ejecting means, and more A uniform and strong (high pressure) jet of processing liquid can be provided toward a plurality of members to be cleaned, and the material constituting the member to be cleaned and the form of the object to be cleaned formed on the member to be cleaned Regardless of this, it is possible to provide a desired removal of an object to be cleaned better, and to provide a cleaning method with excellent cost.

請求項2の発明によれば、当該洗浄方法は、前記洗浄ステップの前に浸漬ステップを有し、
前記浸漬ステップは、隣接する被洗浄部材が所定間隔を置いて並置されて鉛直方向直立姿勢にて処理液中に沈められた状態で配置されている前記複数の被洗浄部材に向けて超音波を照射する超音波照射ステップと、処理液中での前記複数の被洗浄部材の水平方向往復動及び鉛直方向往復動の少なくともいずれか一方の往復動を周期的にもたらす往復動ステップとを有し、
前記浸漬ステップにおける前記複数の被洗浄部材に向けての超音波の照射は、前記複数の被洗浄部材の水平方向往復動及び鉛直方向往復動の少なくともいずれか一方の往復動がなされている状態で行なわれる、請求項1に記載の洗浄方法が提供される。
According to invention of Claim 2, the said washing | cleaning method has a dipping step before the said washing | cleaning step,
In the dipping step, ultrasonic waves are directed toward the plurality of members to be cleaned that are arranged in a state where adjacent members to be cleaned are juxtaposed at predetermined intervals and submerged in the processing liquid in a vertically upright posture. An ultrasonic irradiation step for irradiating; and a reciprocating step for periodically causing reciprocation of at least one of a horizontal reciprocation and a vertical reciprocation of the plurality of members to be cleaned in the treatment liquid,
Irradiation of ultrasonic waves toward the plurality of members to be cleaned in the dipping step is performed in a state where at least one of a horizontal reciprocation and a vertical reciprocation of the plurality of members to be cleaned is performed. A cleaning method according to claim 1 is provided.

すなわち、請求項2の発明では、処理液噴射の前に、複数の被洗浄部材の水平方向往復動及び鉛直方向往復動の少なくともいずれか一方の往復動がなされている状態で超音波を照射することにより、被洗浄部材に対する洗浄能力を向上させることができ、また、本発明をリフトオフ法に適用した場合には、より良好なレジスト部の膨潤及び被洗浄物の除去をもたらすことを可能とする。   That is, in the second aspect of the present invention, the ultrasonic wave is irradiated in a state where at least one of the horizontal reciprocation and the vertical reciprocation of the plurality of members to be cleaned is performed before the treatment liquid is ejected. As a result, it is possible to improve the cleaning ability of the member to be cleaned, and when the present invention is applied to the lift-off method, it is possible to bring about better swelling of the resist portion and removal of the object to be cleaned. .

請求項3の発明によれば、複数の被洗浄部材を処理液中に沈めた状態で配置する処理槽と、
前記複数の被洗浄部材の各被洗浄部材を、鉛直方向直立姿勢にて所定間隔を置いて並置して収容する収容手段であって、前記処理槽に対して可動に配設される収容手段と、
前記処理槽の上部に配置され、前記複数の被洗浄部材に向けて処理液を噴射する処理液噴射口を有する処理液噴射手段であって、前記処理槽に対して可動に配設される処理液噴射手段と、
前記処理槽の下部に配置され、該処理槽内の処理液を排出する処理液排出手段と、
を有する洗浄装置であって、
前記複数の被洗浄部材と前記処理液噴射口との互いに対する相対的な水平方向往復動及び鉛直方向往復動の少なくともいずれか一方の往復動を周期的にもたらす往復動手段と、
前記処理液噴射手段と前記処理液排出手段と前記往復動手段とを制御する制御手段とを更に有し、
前記制御手段は、前記複数の被洗浄部材と前記処理液噴射口とが処理液に沈められた状態が保持された状態で、なお且つ、前記相対的な水平方向往復動及び鉛直方向往復動の少なくともいずれか一方の往復動がなされている状態で、前記処理液噴射口から処理液を噴射することにより、前記複数の被洗浄部材に形成されている被洗浄物を除去し、前記複数の被洗浄部材を沈めていた処理液と前記処理液噴射口から噴射させた処理液とともに排出するように、前記処理液噴射手段と前記往復動手段と前記処理液排出手段とを制御する、洗浄装置が提供される。
According to invention of Claim 3, the processing tank which arrange | positions the to-be-cleaned member in the state immersed in the process liquid,
A storage means for storing the members to be cleaned of the plurality of members to be cleaned in parallel in a vertically standing posture at a predetermined interval; ,
A treatment liquid ejecting means that is disposed above the treatment tank and has a treatment liquid ejection port that ejects a treatment liquid toward the plurality of members to be cleaned. Liquid ejecting means;
A treatment liquid discharging means disposed at a lower portion of the treatment tank and discharging the treatment liquid in the treatment tank;
A cleaning device comprising:
Reciprocating means for periodically causing reciprocation of at least one of the horizontal reciprocation and the vertical reciprocation of the plurality of members to be cleaned and the treatment liquid injection port relative to each other;
A control means for controlling the treatment liquid ejection means, the treatment liquid discharge means, and the reciprocating means;
The control means is in a state in which the plurality of members to be cleaned and the processing liquid ejection port are submerged in the processing liquid, and the relative horizontal reciprocation and vertical reciprocation are maintained. In a state where at least one of the reciprocating motions is performed, the processing liquid is ejected from the processing liquid ejection port, thereby removing the objects to be cleaned formed on the plurality of objects to be cleaned, and the plurality of objects to be cleaned. A cleaning device that controls the processing liquid ejecting means, the reciprocating means, and the processing liquid discharging means to discharge together with the processing liquid that has sunk the cleaning member and the processing liquid ejected from the processing liquid ejection port. Provided.

請求項4の発明によれば、当該洗浄装置は、前記収容手段により収容され、処理液中に沈められている前記複数の被洗浄部材に向けて超音波を照射する超音波照射手段を有し、
前記制御手段は、前記処理液噴射手段による処理液の噴射の前に、前記複数の被洗浄部材の水平方向往復動及び鉛直方向往復動の少なくともいずれか一方の往復動がなされている状態で、前記複数の被洗浄部材に向けて超音波を照射するように、前記往復動手段と前記超音波照射手段とを制御する、請求項3に記載の洗浄装置が提供される。
According to a fourth aspect of the present invention, the cleaning apparatus includes an ultrasonic irradiation unit configured to irradiate ultrasonic waves toward the plurality of members to be cleaned which are accommodated by the accommodating unit and submerged in the processing liquid. ,
The control means is in a state in which at least one of the horizontal reciprocation and the vertical reciprocation of the plurality of members to be cleaned is reciprocated before the treatment liquid is ejected by the treatment liquid ejection means. The cleaning apparatus according to claim 3, wherein the reciprocating means and the ultrasonic irradiation means are controlled so as to apply ultrasonic waves toward the plurality of members to be cleaned.

各請求項に記載の発明によれば、被洗浄部材から被洗浄物を除去する洗浄方法あるいは洗浄装置において、除去された被洗浄物が被洗浄部材へ再付着してしまうというような事態を抑制することができ、なお且つ、処理液噴射手段となるノズルの特注的な設計や製造の必要性もなく、より均等で強力(高圧)な処理液の液中噴流を、複数の被洗浄部材に向けてもたらすことができ、被洗浄部材を構成する材料や該被洗浄部材上に形成される被洗浄物の形態にかかわらず、より良好に被洗浄物の所望の除去をもたらすことを可能にする、という共通の効果を奏する。特に、被洗浄部材上に形成されているレジスト部を剥離して除去し、所望の金属パターンのみを残すリフトオフ法に好適である。   According to the invention described in each claim, in a cleaning method or a cleaning apparatus that removes an object to be cleaned from a member to be cleaned, a situation in which the object to be cleaned is reattached to the member to be cleaned is suppressed. In addition, there is no need for custom design and manufacture of the nozzles that serve as the processing liquid injection means, and more uniform and powerful (high pressure) submerged jets of processing liquid can be supplied to a plurality of members to be cleaned. Regardless of the material constituting the member to be cleaned and the form of the object to be cleaned formed on the member to be cleaned, making it possible to achieve the desired removal of the object to be cleaned better. , Has a common effect. In particular, it is suitable for a lift-off method in which the resist portion formed on the member to be cleaned is peeled and removed to leave only a desired metal pattern.

本発明に係る洗浄装置の一実施形態を示す模式的な構成図である。It is a typical lineblock diagram showing one embodiment of a cleaning device concerning the present invention. 処理槽内の構成を示す模式的な説明図である。It is typical explanatory drawing which shows the structure in a processing tank. 収容手段に収容された被洗浄部材に、処理液噴射手段となるノズルから処理液を噴射する正面形態を示す説明図である。It is explanatory drawing which shows the front form which injects a process liquid from the nozzle used as a process liquid injection means to the to-be-cleaned member accommodated in the accommodating means. 収容手段に収容された被洗浄部材に、ノズルから処理液を噴射する側面形態を示す説明図である。It is explanatory drawing which shows the side surface form which injects a process liquid from a nozzle to the to-be-cleaned member accommodated in the accommodating means. 処理槽を上側から見た平面図である。It is the top view which looked at the processing tank from the upper side. 洗浄方法の各ステップの説明図である。It is explanatory drawing of each step of the washing | cleaning method. リフトオフ法の説明図である。It is explanatory drawing of the lift-off method. 往復動手段による収容手段の水平方向往復動及び鉛直方向往復動の動作を示す模式図である。It is a schematic diagram which shows operation | movement of the horizontal direction reciprocation of the accommodating means by a reciprocation means, and a vertical direction reciprocation.

以下、本発明に係る洗浄方法及び洗浄装置の一実施形態について図面を参照しつつ説明する。本発明は、その技術的特徴を有すれば種々の変形が可能であり、以下に示す具体的な実施形態に限定されるものではない。   Hereinafter, an embodiment of a cleaning method and a cleaning apparatus according to the present invention will be described with reference to the drawings. The present invention can be variously modified as long as it has the technical features, and is not limited to the specific embodiments described below.

本発明に係る洗浄方法及び洗浄装置に適用されうる被洗浄部材は、特に限定されず、種々のものを洗浄対象にすることができる。例えば図7で説明するように、リフトオフ法に適用されうる処理基板であってもよい。この処理基板は、半導体基板51上に設けられたレジスト部52と、そのレジスト部52上に設けられた金属薄膜53とを有している。また、それ以外の洗浄対象であってもよく、例えば、プリント基板等に代表される各種の回路基板であってもよいし、ガラス基板やシリコン基板上にTFT回路が設けられた回路基板であってもよいし、その他の基板であってもよい。いずれにしても、被洗浄物、図7では、レジスト部52とその上に設けられた金属薄膜53とで構成される被洗浄物54である不要物が浮遊した状態で被洗浄部材に再付着するのを防ぐとともに、複数の被洗浄部材をまとめて同時に処理して処理能力を高めたい被洗浄部材であればよい。   The member to be cleaned that can be applied to the cleaning method and the cleaning apparatus according to the present invention is not particularly limited, and various objects can be set as objects to be cleaned. For example, as described with reference to FIG. 7, a processing substrate that can be applied to the lift-off method may be used. The processing substrate has a resist portion 52 provided on the semiconductor substrate 51 and a metal thin film 53 provided on the resist portion 52. In addition, it may be another object to be cleaned, for example, various circuit boards represented by a printed board or the like, or a circuit board in which a TFT circuit is provided on a glass substrate or a silicon substrate. Alternatively, other substrates may be used. In any case, the object to be cleaned, in FIG. 7, the unnecessary object which is the object to be cleaned 54 composed of the resist portion 52 and the metal thin film 53 provided thereon is reattached to the member to be cleaned. Any member to be cleaned may be used as long as it is desired to simultaneously process a plurality of members to be cleaned and increase the processing capacity.

以下、図1、図2及び図6などに示される本発明の一実施形態となる洗浄装置10における構成を説明しつつ洗浄方法を構成する各ステップを説明する。   Hereafter, each step which comprises the washing | cleaning method is demonstrated, demonstrating the structure in the washing | cleaning apparatus 10 which becomes one Embodiment of this invention shown by FIG.1, FIG2 and FIG.6 etc. FIG.

本発明に係る洗浄方法は概して、複数の被洗浄部材を処理液中に沈めた状態で配置する被洗浄部材配置ステップと、処理液噴射手段の処理液噴射口を複数の被洗浄部材の上方に配置する処理液噴射口配置ステップと、複数の被洗浄部材に形成されている被洗浄物を除去する洗浄ステップとを有して構成され、本実施形態においてはさらに、洗浄ステップの前に処理液に対する被洗浄部材の十分な浸漬をもたらし洗浄能力の向上を図る浸漬ステップを含んで構成される。   The cleaning method according to the present invention generally includes a member-to-be-cleaned arrangement step in which a plurality of members to be cleaned are placed in a state of being submerged in a processing liquid, and a processing liquid injection port of a processing liquid injection unit above the plurality of members to be cleaned A treatment liquid injection port arrangement step to be arranged, and a cleaning step for removing the object to be cleaned formed on the plurality of members to be cleaned. In this embodiment, the processing liquid is further provided before the cleaning step. And a dipping step for improving the cleaning ability by sufficiently dipping the member to be cleaned.

(被洗浄部材配置ステップ)
本実施形態における洗浄方法においては、先ず、収容カセット15に収容された被洗浄部材1が処理槽11内の所定の位置にセットされ、その後に、図6(a)に示すように、処理液2が被洗浄部材1を覆うように満たされる被洗浄部材配置ステップが実行される。
(To-be-cleaned member placement step)
In the cleaning method of the present embodiment, first, the member to be cleaned 1 stored in the storage cassette 15 is set at a predetermined position in the processing tank 11, and then, as shown in FIG. A member-to-be-cleaned step is performed in which 2 is filled so as to cover the member to be cleaned 1.

図1、図2及び図6に示される本発明の一実施形態となる洗浄装置10は、複数の被洗浄部材1を処理液中に沈めた状態で配置する処理槽11と、複数の被洗浄部材1の各被洗浄部材を、鉛直方向直立姿勢にて所定間隔を置いて並置し収容し、効率的なバッチ処理を実現する収容手段であって、処理槽11に対して可動に配設される収容手段とを有し、該被洗浄部材配置ステップにおいては、複数の被洗浄部材が、収容手段の一構成要素となる収容カセット15に収容され、処理槽11内にて処理液中に沈められた状態で配置される。すなわち、被洗浄部材配置ステップにおいては、処理液中に、複数の被洗浄部材が、鉛直方向直立姿勢にて所定間隔を置いて並置された状態で配置される。   A cleaning apparatus 10 according to an embodiment of the present invention shown in FIGS. 1, 2, and 6 includes a processing tank 11 in which a plurality of members to be cleaned 1 are placed in a processing liquid, and a plurality of objects to be cleaned. Each of the members to be cleaned of the member 1 is a storage unit that stores and arranges the members to be cleaned in a vertically upright posture at a predetermined interval, and realizes an efficient batch process. In the step of arranging the member to be cleaned, the plurality of members to be cleaned are stored in a storage cassette 15 which is a component of the storage unit and submerged in the processing liquid in the processing tank 11. Placed in a state where That is, in the member-to-be-cleaned arrangement step, a plurality of members to be cleaned are arranged in the processing liquid in a state where they are juxtaposed at predetermined intervals in a vertical upright posture.

収容カセット15としては、例えば図2及び図3に示すようなカセットを用いることが好ましい。収容カセット15の大きさ、形状、材質は、特に限定されず、収容する被洗浄部材1の数と大きさ、処理液の種類等を考慮して選択される。一般的な汎用品であってもよいし、専用に設計された特注品であってもよい。例えば、ステンレス等の金属成形品や、ポリカーボネート等の樹脂成形品等を挙げることができる。このように、複数の被洗浄部材1が収容カセット15に収容されるので、収容カセット15毎に搬送することができ、その結果、洗浄工程の効率化を実現でき、処理能力を高めることができる。   As the accommodation cassette 15, for example, a cassette as shown in FIGS. 2 and 3 is preferably used. The size, shape, and material of the storage cassette 15 are not particularly limited, and are selected in consideration of the number and size of the cleaning target members 1 to be stored, the type of processing liquid, and the like. It may be a general general-purpose product or a custom-made product designed exclusively. For example, a metal molded product such as stainless steel or a resin molded product such as polycarbonate can be used. Thus, since the to-be-cleaned member 1 is accommodated in the accommodating cassette 15, it can convey for every accommodating cassette 15, As a result, efficiency improvement of a washing | cleaning process can be implement | achieved and processing capacity can be improved. .

リフトオフ法に適用されうる処理基板のうち、金属薄膜53とレジスト部52とを含む被洗浄物54をできるだけ大きい状態で剥がそうとする場合、好ましい収容カセット15としては、図1に示す処理液通過口29に対応した開口部が収容カセット15の下部に設けられていることが好ましい。開口部は、全体が開口していてもよいし、パンチングメタルのような穴あき形状であってもよい。こうした開口部が収容カセット15の下部に設けられていることにより、大きい状態で剥がれた被洗浄物54を破壊せずに回収手段である回収網41で捕集することができる。なお、収容カセット15の側壁には、穴やスリットが無いものであってもよいし、有るものであってもよい。   Of the processing substrates that can be applied to the lift-off method, when the object 54 to be cleaned including the metal thin film 53 and the resist portion 52 is to be peeled as large as possible, a preferable storage cassette 15 is a processing liquid passage shown in FIG. It is preferable that an opening corresponding to the opening 29 is provided in the lower part of the storage cassette 15. The entire opening may be open or may have a perforated shape such as punching metal. By providing such an opening in the lower part of the storage cassette 15, the object to be cleaned 54 peeled off in a large state can be collected by the collection net 41 as a collection means without being destroyed. Note that the side wall of the storage cassette 15 may or may not have a hole or a slit.

本実施形態において処理槽11は、被洗浄部材1に向けて処理液2を噴射させる前に、複数の被洗浄部材1を処理液2に十分に浸漬させる処理槽11として用いられうるものとして構成される。但し、これに限られることはなく、処理槽11とは別の処理槽にて、複数の被洗浄部材1を処理液2に十分に浸漬させてもよい。   In the present embodiment, the treatment tank 11 is configured to be used as the treatment tank 11 in which the plurality of members to be cleaned 1 are sufficiently immersed in the treatment liquid 2 before the treatment liquid 2 is sprayed toward the member 1 to be cleaned. Is done. However, the present invention is not limited to this, and the plurality of members to be cleaned 1 may be sufficiently immersed in the treatment liquid 2 in a treatment tank different from the treatment tank 11.

処理槽11の上方は開放されており、その開放された部位から被洗浄部材1を収容した収容カセット15が処理槽内に投入される。投入された収容カセット15は、図3に示すように、処理槽内に設けられたカセット受部材14の上に載置される。カセット受部材14は、通常、処理槽11と同様のステンレス鋼等で形成され、その面は、通常、パンチングメタルのような穴が設けられているが、それに限定されない。   The upper part of the processing tank 11 is open, and the storage cassette 15 that stores the member to be cleaned 1 is put into the processing tank from the opened part. As shown in FIG. 3, the loaded storage cassette 15 is placed on a cassette receiving member 14 provided in the processing tank. The cassette receiving member 14 is usually formed of stainless steel or the like similar to that of the processing tank 11, and the surface thereof is usually provided with a hole such as a punching metal, but is not limited thereto.

処理槽11の形状や材質は特に限定されないが、通常は、ステンレス鋼等の耐薬品性材料が選択されることが好ましい。例えばリフトオフ法での半導体基板51のパターニングを行う場合には、その処理に用いる処理液の種類を考慮して選択することが好ましい。   Although the shape and material of the treatment tank 11 are not particularly limited, it is usually preferable to select a chemical resistant material such as stainless steel. For example, when patterning the semiconductor substrate 51 by the lift-off method, it is preferable to select in consideration of the type of processing liquid used for the processing.

なお、符号14aは、収容カセット15を所定の位置にガイドするカセットガイドであり、符号16は、収容カセット15を保持するカセット保持部材である。   Reference numeral 14 a is a cassette guide that guides the storage cassette 15 to a predetermined position, and reference numeral 16 is a cassette holding member that holds the storage cassette 15.

(浸漬ステップ)
本実施形態における洗浄方法においては、被洗浄部材配置ステップに続き、浸漬ステップが実行される。
(Immersion step)
In the cleaning method according to the present embodiment, the dipping step is performed following the member to be cleaned placing step.

洗浄装置10は、処理槽11に対する複数の被洗浄部材1の所定位置への配置と、複数の被洗浄部材1の水平方向往復動及び鉛直方向往復動の少なくともいずれか一方の周期的な往復動とをもたらしうるように構成された被洗浄部材用の往復動手段17を有して構成される。本実施形態においては、図8に示されるごとく、収容手段の一構成要素となるカセット保持部材16であって収容カセット15を保持するカセット保持部材16を往復動させて、複数の被洗浄部材1の水平方向往復動及び鉛直方向往復動の少なくともいずれか一方の周期的な往復動がもたらされうるように構成されるが、これに限られることはなく、カセット保持部材16は不動とされ、収容カセット15が往復動される構成とされてもよい。   The cleaning apparatus 10 is configured to arrange the plurality of members to be cleaned 1 at predetermined positions with respect to the processing tank 11 and periodically reciprocate at least one of the horizontal reciprocation and the vertical reciprocation of the plurality of members 1 to be cleaned. The reciprocating means 17 for the member to be cleaned is configured to be capable of providing In the present embodiment, as shown in FIG. 8, the cassette holding member 16 that is a component of the storage unit and that holds the storage cassette 15 is reciprocated to move the plurality of members to be cleaned 1. However, the present invention is not limited to this, and the cassette holding member 16 is immovable. The accommodation cassette 15 may be configured to reciprocate.

また、洗浄装置10には、処理槽11の下部に、超音波照射手段となる超音波洗浄装置35が配設されている。超音波洗浄装置35は、被洗浄部材1の洗浄処理の態様により、任意に作動させることができる。特に、後述の処理液脱気装置91と併用する場合には効果が大きい。また、リフトオフ法に適用する場合には、超音波洗浄装置35は、レジスト部52の膨潤を促進させる手段として作動されてもよい。なお、超音波洗浄装置35は、強力な洗浄補助手段であり、半導体基板51上のレジスト部52と金属薄膜53との剥離にも好ましく適用でき、金属薄膜53を細かく破壊する。そのため、金属薄膜53をできるだけ大きい状態で剥がそうとする場合には、超音波洗浄装置35を作動させないことができる。   Further, in the cleaning apparatus 10, an ultrasonic cleaning apparatus 35 serving as an ultrasonic irradiation unit is disposed below the processing tank 11. The ultrasonic cleaning device 35 can be arbitrarily operated according to the mode of the cleaning process of the member 1 to be cleaned. In particular, the effect is great when used in combination with a processing liquid deaerator 91 described later. When applied to the lift-off method, the ultrasonic cleaning device 35 may be operated as a means for promoting the swelling of the resist portion 52. Note that the ultrasonic cleaning device 35 is a powerful cleaning auxiliary means, and can be preferably applied to the separation of the resist portion 52 and the metal thin film 53 on the semiconductor substrate 51, and the metal thin film 53 is broken finely. Therefore, when the metal thin film 53 is to be peeled as large as possible, the ultrasonic cleaning device 35 can not be operated.

浸漬ステップにおいては、処理液2を噴射させる前に、複数の被洗浄部材1を処理液2に十分に浸漬させる。さらに本実施形態における洗浄方法の浸漬ステップにおいては、制御手段により、複数の被洗浄部材の水平方向往復動及び鉛直方向往復動の少なくともいずれか一方の往復動がなされている状態で、複数の被洗浄部材に向けて超音波を照射しうるように、往復動手段17と超音波照射手段35とを制御する。   In the immersion step, the plurality of members to be cleaned 1 are sufficiently immersed in the treatment liquid 2 before the treatment liquid 2 is sprayed. Further, in the dipping step of the cleaning method in the present embodiment, the control means performs a plurality of objects to be cleaned in a state where at least one of the horizontal reciprocation and the vertical reciprocation of the plurality of members to be cleaned is performed. The reciprocating means 17 and the ultrasonic irradiation means 35 are controlled so that the ultrasonic waves can be irradiated toward the cleaning member.

このような浸漬ステップによれば、処理液中に沈められた被洗浄部材1に対して超音波を照射することで、洗浄効果の向上を図ることを可能とする。また、リフトオフ法に適用する場合には、超音波照射によりレジスト部の膨潤を促進させることを可能にするとともに、複数の被洗浄部材に向けての超音波の照射を、該複数の被洗浄部材の水平方向往復動及び鉛直方向往復動の少なくともいずれか一方の往復動がなされている状態で行うようにすることで、超音波照射により液中に発生する定在波の影響による膨潤効果の偏り(ムラ)を抑制し、被洗浄部材にダメージを与えることなく、レジスト部全体にわたり、より良好で均等な膨潤効果をもたらすことを可能にする。その結果、半導体基板51上に設けられたレジスト部52とそのレジスト部52上に設けられた金属薄膜53とからなる被洗浄物54を容易に剥離することを可能とし、半導体基板51のパターンニングを、半導体基板51に浮遊物を再付着させることなく高い処理効率で行うことを可能とする。   According to such an immersion step, it is possible to improve the cleaning effect by irradiating the member to be cleaned 1 submerged in the processing liquid with ultrasonic waves. In addition, when applied to the lift-off method, it is possible to promote swelling of the resist portion by ultrasonic irradiation, and to apply ultrasonic waves toward the plurality of members to be cleaned. The bias of the swelling effect due to the influence of standing waves generated in the liquid by ultrasonic irradiation is performed in a state where at least one of the horizontal reciprocating motion and the vertical reciprocating motion is performed. It is possible to suppress (unevenness) and bring about a better and uniform swelling effect over the entire resist portion without damaging the member to be cleaned. As a result, it is possible to easily peel the object to be cleaned 54 including the resist portion 52 provided on the semiconductor substrate 51 and the metal thin film 53 provided on the resist portion 52, and patterning the semiconductor substrate 51. Can be performed with high processing efficiency without causing the floating substrate to reattach to the semiconductor substrate 51.

(処理液噴射口配置ステップ)
本実施形態における洗浄方法においては、浸漬ステップに続き、上方から処理液噴射手段21が降下して、被洗浄部材1の上方近くにセットされる処理液噴射口配置ステップが実行される。
(Processing liquid injection port arrangement step)
In the cleaning method according to the present embodiment, following the dipping step, the processing liquid ejecting means 21 is set so that the processing liquid ejecting means 21 descends from above and is set near the top of the member 1 to be cleaned.

洗浄装置10は、複数の被洗浄部材1に向けて処理液を噴射する処理液噴射手段21を有して構成され、該処理液噴射手段21は、処理槽11の上部12に配置され、複数の被洗浄部材1に向けて処理液を噴射する処理液噴射口を有し、処理槽11に対して可動に配設される。   The cleaning apparatus 10 includes a processing liquid ejecting unit 21 that ejects a processing liquid toward a plurality of members 1 to be cleaned, and the processing liquid ejecting unit 21 is disposed on the upper portion 12 of the processing tank 11. The processing liquid injection port for injecting the processing liquid toward the member 1 to be cleaned is provided so as to be movable with respect to the processing tank 11.

処理液噴射手段21としては、図1等に示すように、複数の被洗浄部材1に向けて均等に配置された複数のシャワーノズルであることが好ましい。シャワーノズルとしては、ストレートノズル、フラットコーンノズル、フルコーンノズル等を用いることができる。これらのシャワーノズルから、好ましい形状のシャワーノズルを選択して用いることができる。図7に示すリフトオフ法で利用する処理基板のうち、金属薄膜53とレジスト部52とからなる被洗浄物54をできるだけ大きい状態で剥がそうとする場合には、フルコーンノズルを用いることが好ましい。   As shown in FIG. 1 and the like, the treatment liquid ejecting means 21 is preferably a plurality of shower nozzles arranged evenly toward the plurality of members to be cleaned 1. As the shower nozzle, a straight nozzle, a flat cone nozzle, a full cone nozzle, or the like can be used. A shower nozzle having a preferable shape can be selected from these shower nozzles. Of the processing substrates used in the lift-off method shown in FIG. 7, it is preferable to use a full cone nozzle when the object to be cleaned 54 composed of the metal thin film 53 and the resist portion 52 is to be peeled off as large as possible.

処理液噴射手段21は、図1〜図4に示すように、被洗浄部材1の上方に、複数配置される。例えば被洗浄部材1が収容カセット15に収容された半導体基板1である場合、半導体基板1の径方向(基板面方向ということもできる。)に複数(図示の例では4つ)配置され、収容カセット15の長手方向(半導体基板1が並んだ方向ということもできる。)にも複数(図示の例では8つ)配置されている。シャワーノズルの数とその配置は、洗浄しようとする被洗浄部材1の大きさや収容カセット15内の被洗浄部材1の配置等によって任意に設定されることが好ましい。   As shown in FIGS. 1 to 4, a plurality of the treatment liquid ejecting means 21 are arranged above the member to be cleaned 1. For example, when the member 1 to be cleaned is the semiconductor substrate 1 accommodated in the accommodation cassette 15, a plurality (four in the illustrated example) are arranged and accommodated in the radial direction of the semiconductor substrate 1 (also referred to as the substrate surface direction). A plurality (eight in the illustrated example) are also arranged in the longitudinal direction of the cassette 15 (also referred to as the direction in which the semiconductor substrates 1 are arranged). It is preferable that the number and arrangement of the shower nozzles are arbitrarily set depending on the size of the member 1 to be cleaned and the arrangement of the member 1 to be cleaned in the storage cassette 15.

処理液噴射手段(シャワーノズル)21は、図示の例では、ノズル配管22に等間隔で8つ並んで取り付けられている。そして、シャワーノズル21が取り付けられたノズル配管22が、半導体基板1の径方向に4列等間隔に配置されている。4列のノズル配管22は、保持部材23で一体に保持され、処理液噴射手段用の往復動手段27に取り付けられている。   In the illustrated example, eight processing liquid ejecting means (shower nozzles) 21 are attached to the nozzle pipe 22 at regular intervals. The nozzle pipes 22 to which the shower nozzles 21 are attached are arranged at equal intervals in four rows in the radial direction of the semiconductor substrate 1. The four rows of nozzle pipes 22 are integrally held by a holding member 23 and attached to a reciprocating means 27 for a processing liquid ejecting means.

また、処理液噴射手段用の往復動手段27は、被洗浄部材1に対する処理液噴射口の所定位置への配置と、処理液噴射手段21の処理液噴射口の水平方向往復動及び鉛直方向往復動の少なくともいずれか一方の周期的な往復動とをもたらしうるように構成される。   Further, the reciprocating means 27 for the processing liquid ejecting means is disposed at a predetermined position of the processing liquid ejection port with respect to the member 1 to be cleaned, and the horizontal reciprocation and vertical reciprocation of the processing liquid ejection port of the processing liquid ejecting means 21. It is configured to be able to provide periodic reciprocation of at least one of the movements.

処理液噴射手段21の噴射量は、シャワー配管22毎に任意に制御することができる。こうした制御は、各シャワー配管のバルブの開閉により調整できる。その結果、図示例では、4列のなかで任意のシャワー配管を多くしたり少なくしたりすることができる。例えば、図3に示すように、4列のシャワー配管のうち、両側の2列のシャワー配管の流量を多くしてシャワーノズル21a,21dの噴射量を大きくしたり、流量を少なくしてシャワーノズル21a,21dの噴射量を小さくしたりすることができる。処理液噴射の制御は、自動制御であっても手動制御であってもよい。処理液噴射の時間は、任意に設定され、例えば、1,2秒であってもよいし、5,6秒であってもよいし、10秒以上であってもよい。   The injection amount of the treatment liquid injection unit 21 can be arbitrarily controlled for each shower pipe 22. Such control can be adjusted by opening and closing the valves of each shower pipe. As a result, in the illustrated example, it is possible to increase or decrease any shower piping in the four rows. For example, as shown in FIG. 3, out of four rows of shower piping, the flow rate of the two rows of shower piping on both sides is increased to increase the injection amount of the shower nozzles 21a and 21d, or the flow rate is decreased to decrease the shower nozzle. The injection amount of 21a and 21d can be reduced. The treatment liquid ejection control may be automatic control or manual control. The treatment liquid ejection time is arbitrarily set, and may be, for example, 1, 2 seconds, 5, 6 seconds, or 10 seconds or more.

(洗浄ステップ)
本実施形態における洗浄方法においては、処理液噴射口配置ステップに続き、複数の被洗浄部材に形成されている被洗浄物を除去する洗浄ステップが実行される。
(Washing step)
In the cleaning method according to the present embodiment, a cleaning step for removing the objects to be cleaned formed on the plurality of members to be cleaned is executed following the processing liquid ejection port arranging step.

洗浄装置10は、処理液噴射手段21と被洗浄部材用の往復動手段17と処理液噴射手段用の往復動手段27とともに、さらに、処理槽11の下部に配置され、該処理槽内の処理液を排出する処理液排出手段31と、これらの各手段を制御する制御手段とを有して構成される。   The cleaning apparatus 10 is disposed at the lower part of the processing tank 11 together with the processing liquid ejecting means 21, the reciprocating means 17 for the member to be cleaned, and the reciprocating means 27 for the processing liquid ejecting means. A processing liquid discharge means 31 for discharging the liquid and a control means for controlling each of these means are configured.

処理液排出手段31は、図1等に示すように、処理槽11の下方に設けられた排出口を挙げることができる。通常、処理槽11の下方の側壁が斜めに傾いており、その最下点に排出口31が設けられる。なお、被洗浄部材1を収容する収容カセット15は、下に処理液通過口29が開口しており、シャワーノズル21から噴射された処理液2は、被洗浄部材1を洗浄した後にその処理液通過口29から下方に流れる。処理液通過口29を通過した処理液2は、処理槽11の排出口31から排出される。   As shown in FIG. 1 and the like, the processing liquid discharge means 31 can include a discharge port provided below the processing tank 11. Usually, the lower side wall of the processing tank 11 is inclined obliquely, and the discharge port 31 is provided at the lowest point. The storage cassette 15 that stores the member to be cleaned 1 has a processing liquid passage port 29 opened below, and the processing liquid 2 sprayed from the shower nozzle 21 is processed after the member 1 to be cleaned is cleaned. It flows downward from the passage port 29. The processing liquid 2 that has passed through the processing liquid passage port 29 is discharged from the discharge port 31 of the processing tank 11.

排出口31の大きさや形状は、噴射量等や排出速さによって任意に設定される。排出された処理液2は、図1に示すように、循環槽81に流れ込む。循環槽81に流れ込んだ処理液2に含まれる被洗浄物54は、必要に応じて回収網41で捕集される。洗浄処理を終了した後の処理液2は、循環ポンプ82、フィルター83,84,85、熱交換器86を経て循環させることができ、処理液2に含まれる細かい被洗浄物54をフィルターで除去して、次の洗浄処理に利用することができる。   The size and shape of the discharge port 31 are arbitrarily set according to the injection amount and the discharge speed. The discharged processing liquid 2 flows into the circulation tank 81 as shown in FIG. The cleaning target 54 contained in the processing liquid 2 that has flowed into the circulation tank 81 is collected by the collection net 41 as necessary. After the cleaning process is completed, the processing liquid 2 can be circulated through the circulation pump 82, the filters 83, 84, 85, and the heat exchanger 86, and the fine object 54 contained in the processing liquid 2 is removed by the filter. Thus, it can be used for the next cleaning process.

制御手段は、複数の被洗浄部材1と処理液噴射口とが処理液に沈められた状態が保持された状態で、なお且つ、複数の被洗浄部材と処理液噴射口との互いに対する相対的な水平方向往復動及び鉛直方向往復動の少なくともいずれか一方の往復動がなされている状態で、処理液噴射口から処理液を噴射することにより、複数の被洗浄部材に形成されている被洗浄物を除去し、該除去された被洗浄物を複数の被洗浄部材を沈めていた処理液と処理液噴射口から噴射された処理液とともに排出するように、処理液噴射手段21と被洗浄部材用の往復動手段17と処理液噴射手段用の往復動手段27と処理液排出手段31とを制御するように構成される。   The control means maintains a state in which the plurality of members to be cleaned 1 and the processing liquid ejection ports are submerged in the processing liquid, and the plurality of members to be cleaned and the processing liquid ejection ports are relatively relative to each other. In a state where at least one of the horizontal reciprocating motion and the vertical reciprocating motion is being reciprocated, the liquid to be cleaned is formed on the plurality of members to be cleaned by injecting the processing liquid from the processing liquid injection port. The processing liquid ejecting means 21 and the member to be cleaned are removed so that the object to be cleaned is discharged together with the processing liquid submerged in the plurality of members to be cleaned and the processing liquid ejected from the processing liquid ejection port. The reciprocating means 17 for processing, the reciprocating means 27 for processing liquid ejecting means, and the processing liquid discharging means 31 are controlled.

また、本実施形態の制御手段は、処理液噴射手段21での処理液の噴射量を徐々に増すとともに、処理液排出手段31の処理液の排出量を徐々に増すことができるように構成される。こうした噴射量と排出量の制御によれば、複数の被洗浄部材1を処理液2に沈めた状態を保持しながら、噴射量を徐々に増すとともに排出量を徐々に増すことができるので、処理液噴射手段21での処理液の噴射によって被洗浄部材1の洗浄を急激に行わずに緩やかに行うことを可能とする。こうした制御は、特に洗浄の初期段階で好ましい。その結果、リフトオフ法で半導体基板1を処理する場合、金属薄膜53とレジスト部52とからなる被洗浄物54をできるだけ大きい状態で剥がすことを可能とする。   The control means of the present embodiment is configured to gradually increase the amount of treatment liquid ejected by the treatment liquid ejection means 21 and gradually increase the amount of treatment liquid discharged from the treatment liquid discharge means 31. The According to the control of the injection amount and the discharge amount, the discharge amount can be gradually increased and the discharge amount can be gradually increased while maintaining the state in which the plurality of members to be cleaned 1 are submerged in the treatment liquid 2. The cleaning of the member to be cleaned 1 can be performed gently without being rapidly performed by spraying the processing liquid from the liquid spraying means 21. Such control is preferable particularly in the initial stage of cleaning. As a result, when the semiconductor substrate 1 is processed by the lift-off method, it is possible to peel the object to be cleaned 54 composed of the metal thin film 53 and the resist portion 52 in a state as large as possible.

本実施形態の洗浄ステップにおいては、複数の被洗浄部材1と処理液噴射手段21の処理液噴射口とが処理液に沈められた状態が保持されながら、複数の被洗浄部材に向けて処理液噴射口から処理液を噴射しつつ、複数の被洗浄部材を沈めていた処理液と処理液噴射口から噴射された処理液との排出を行うことで、複数の被洗浄部材に形成されている被洗浄物を除去して洗浄する。   In the cleaning step of the present embodiment, the processing liquid is directed toward the plurality of members to be cleaned while maintaining the state in which the plurality of members to be cleaned 1 and the processing liquid ejection ports of the processing liquid ejecting means 21 are submerged in the processing liquid. While the processing liquid is ejected from the ejection port, the processing liquid that has sunk the plurality of members to be cleaned and the processing liquid ejected from the processing liquid ejection port are discharged to form the plurality of members to be cleaned. Remove the object to be cleaned.

さらに、本発明の洗浄ステップにおいては、処理液中での複数の被洗浄部材と処理液噴射手段の処理液噴射口との互いに対する相対的な水平方向往復動及び鉛直方向往復動の少なくともいずれか一方の往復動を周期的にもたらす往復動ステップを有し、複数の被洗浄部材に向けての処理液の噴射が、該相対的な水平方向往復動及び鉛直方向往復動の少なくともいずれか一方の往復動がなされている状態で行なわれる。   Furthermore, in the cleaning step of the present invention, at least one of a horizontal reciprocation and a vertical reciprocation relative to each other of the plurality of members to be cleaned in the processing liquid and the processing liquid injection port of the processing liquid injection means. A reciprocating step that periodically brings one reciprocating motion, and the injection of the treatment liquid toward the plurality of members to be cleaned is at least one of the relative horizontal reciprocating motion and the vertical reciprocating motion. It is performed in a state where reciprocation is made.

このような洗浄ステップによれば、処理液噴射と処理液排出とを、複数の被洗浄部材と処理液噴射口とが処理液に沈められた状態が保持されながら行い、なお且つ、複数の被洗浄部材を沈めていた処理液と処理液噴射口から噴射された処理液とともに、除去された被洗浄物とを排出するようにすることができ、よって、液中を浮遊する除去された被洗浄物が被洗浄部材への再付着してしまうというような事態を抑制することでき、より良好な被洗浄部材の洗浄を可能とする。   According to such a cleaning step, the treatment liquid ejection and the treatment liquid discharge are performed while maintaining the state in which the plurality of members to be cleaned and the treatment liquid ejection ports are submerged in the treatment liquid. The removed cleaning object can be discharged together with the processing liquid submerged in the cleaning member and the processing liquid sprayed from the processing liquid jet port, and thus the removed cleaning target floating in the liquid. It is possible to suppress a situation in which an object is reattached to the member to be cleaned, and it is possible to perform better cleaning of the member to be cleaned.

さらに、このような洗浄ステップによれば、複数の被洗浄部材に向けての処理液の噴射を、処理液中での複数の被洗浄部材と処理液噴射口との互いに対する相対的な水平方向往復動及び鉛直方向往復動の少なくともいずれか一方の往復動がなされている状態で行うようにすることで、より均等で強力(高圧)な処理液の液中噴流を、複数の被洗浄部材に向けてもたらすことができ、被洗浄部材を構成する材料や該被洗浄部材上に形成される被洗浄物の形態にかかわらず、より良好な被洗浄物の所望の除去をもたらすことを可能とする。   Further, according to such a cleaning step, the jetting of the processing liquid toward the plurality of members to be cleaned can be performed in the horizontal direction relative to each other of the plurality of members to be cleaned and the processing liquid jets in the processing liquid. By performing in a state where at least one of the reciprocating motion and the vertical reciprocating motion is performed, a more uniform and strong (high pressure) submerged jet of treatment liquid is supplied to a plurality of members to be cleaned. Regardless of the material constituting the member to be cleaned and the form of the object to be cleaned formed on the member to be cleaned, making it possible to achieve the desired removal of the object to be cleaned better. .

処理液排出の制御は、自動制御であっても手動制御であってもよい。本実施形態においては、図6(b)に示すように、処理液噴射と処理液排出とを、複数の被洗浄部材1を処理液2に沈めた状態を保持しながら行うので、処理液排出での処理液2の排出量と上記した処理液噴射での処理液2の導入量とは、浸漬した状態が保持できる範囲内で設定され、その量は、同量又はほぼ同量になるように制御される。排出量と導入量が同じ又はほぼ同じ場合、処理液排出の時間は、上記した処理液噴射の時間に対応させて任意に設定される。例えば、処理液噴射が1,2秒である場合、被洗浄部材1を処理液2に沈めた状態を保持しながら行う処理液排出は同じく1,2秒であり、処理液噴射が5,6秒である場合、被洗浄部材1を処理液2に沈めた状態を保持しながら行う処理液排出は同じく5、6秒である。   The processing liquid discharge control may be automatic control or manual control. In the present embodiment, as shown in FIG. 6B, the treatment liquid ejection and the treatment liquid discharge are performed while maintaining the state in which the plurality of members to be cleaned 1 are submerged in the treatment liquid 2, so that the treatment liquid is discharged. The discharge amount of the treatment liquid 2 in the above and the introduction amount of the treatment liquid 2 in the treatment liquid injection described above are set within a range in which the immersed state can be maintained, and the amount is the same amount or almost the same amount. Controlled. When the discharge amount and the introduction amount are the same or substantially the same, the treatment liquid discharge time is arbitrarily set in accordance with the treatment liquid injection time described above. For example, when the treatment liquid ejection is for 1 to 2 seconds, the treatment liquid discharge performed while keeping the member 1 to be cleaned submerged in the treatment liquid 2 is also 1 to 2 seconds, and the treatment liquid ejection is 5, 6 In the case of the second, the treatment liquid discharge performed while keeping the member 1 to be cleaned submerged in the treatment liquid 2 is also 5 or 6 seconds.

処理液排出において、図6(b)に示すように処理液噴射での導入量と処理液排出での排出量とを同じ又はほぼ同じにして処理した後は、図6(c)に示すように処理液排出の排出量を処理液噴射の導入量よりも増して処理液2の水位を下げる。こうした処理により、処理液2の水位が下がって行く途中で処理液2中に浮遊した被洗浄物54が仮に存在した場合、その被洗浄物54が被洗浄部材1に付着したとしても、付着した被洗浄物54をシャワーノズル21から噴射された処理液2で洗い流すことができる。最後に、図6(d)に示すように、シャワーノズル21を上方に引き上げ、その後に収容カセット15も引き上げる。   As shown in FIG. 6B, after the processing liquid is discharged and processed with the same amount or almost the same amount of introduction in the processing liquid ejection and that in the processing liquid discharge as shown in FIG. 6B. Further, the discharge amount of the treatment liquid discharge is increased more than the introduction amount of the treatment liquid injection, and the water level of the treatment liquid 2 is lowered. As a result of such treatment, if there is an object 54 to be cleaned that floats in the treatment liquid 2 while the water level of the treatment liquid 2 is going down, even if the object 54 to be cleaned adheres to the member 1 to be cleaned. The cleaning object 54 can be washed away with the processing liquid 2 sprayed from the shower nozzle 21. Finally, as shown in FIG. 6D, the shower nozzle 21 is lifted upward, and then the storage cassette 15 is also lifted.

処理液2の水位が下がって行く途中では、噴射ノズルから処理液2だけ噴射してもよいし、処理液2とガス(空気や窒素等)を混合して同時に噴射してもよい。また、排出途中の処理液2の水位が、被洗浄部材1(例えば半導体基板)よりも下になった場合にも、噴射ノズルから処理液2だけ噴射してもよいし、処理液2とガス(空気や窒素等)を混合して同時に噴射してもよいが、ガスだけを噴射してもよい。ガスだけを噴射する場合は、被洗浄部材1の液切りを行うことができる。   While the water level of the processing liquid 2 is decreasing, only the processing liquid 2 may be injected from the injection nozzle, or the processing liquid 2 and gas (air, nitrogen, etc.) may be mixed and injected at the same time. Further, even when the level of the processing liquid 2 being discharged is lower than the member to be cleaned 1 (for example, a semiconductor substrate), only the processing liquid 2 may be injected from the injection nozzle, or the processing liquid 2 and the gas (Air, nitrogen, etc.) may be mixed and injected at the same time, but only gas may be injected. When only gas is injected, the member to be cleaned 1 can be drained.

(回収ステップ)
尚、被洗浄物54を回収する場合には、回収ステップが洗浄ステップと併せて行われてもよい。本実施形態における洗浄装置10においては、被洗浄部材1を洗浄することによって生じた被洗浄物54を回収する回収手段がさらに配設される。この回収手段は、その被洗浄物54の種類や大きさにより、必要に応じて設けられる。被洗浄物54が、上記したリフトオフ法によって除去する金属薄膜53及びレジスト部52からなる被洗浄物54である場合は、回収手段として回収網41(図1を参照)を設けることが好ましい。こうした回収網41は、ステンレス製の網を用いることができ、その網目(メッシュ)は、除去した金属薄膜53の大きさに応じて選択することができる。
(Recovery step)
In the case where the object to be cleaned 54 is recovered, the recovery step may be performed together with the cleaning step. In the cleaning apparatus 10 according to the present embodiment, a recovery unit that recovers the cleaning object 54 generated by cleaning the member to be cleaned 1 is further provided. This recovery means is provided as necessary depending on the type and size of the object 54 to be cleaned. When the object to be cleaned 54 is the object to be cleaned 54 composed of the metal thin film 53 and the resist portion 52 to be removed by the lift-off method described above, it is preferable to provide a recovery net 41 (see FIG. 1) as recovery means. Such a recovery net 41 can be a stainless steel net, and the mesh (mesh) can be selected according to the size of the removed metal thin film 53.

こうした回収手段を設けることにより、被洗浄部材1が例えばレジスト部52と金属薄膜53とを形成した半導体基板51である場合、レジスト部52とともに剥離した金属薄膜53を被洗浄物54として効率的に回収することができる。その結果、回収した金属薄膜53を資源として再利用することも可能になる。   By providing such recovery means, when the member to be cleaned 1 is, for example, the semiconductor substrate 51 on which the resist portion 52 and the metal thin film 53 are formed, the metal thin film 53 peeled off together with the resist portion 52 is efficiently used as the object to be cleaned 54. It can be recovered. As a result, the recovered metal thin film 53 can be reused as a resource.

さらに、本実施形態においては、オーバーフロー槽18が処理槽11に付設され、処理槽11から不測に溢れた処理液を収容することを可能としうるとともに、また、処理槽11の下側から処理液を循環させ、処理液の液面を上昇させることにより、処理液の液面付近に浮遊した金属スラッジ等の浮遊物をオーバーフロー槽18内へ流入させ、この浮遊物の被洗浄部材への再付着を防ぐことを可能としうるようにも構成されている。   Furthermore, in the present embodiment, an overflow tank 18 is attached to the processing tank 11 and can accommodate the processing liquid that has unexpectedly overflowed from the processing tank 11, and the processing liquid from the lower side of the processing tank 11. Is circulated to raise the liquid level of the processing liquid, so that floating substances such as metal sludge floating near the liquid surface of the processing liquid flow into the overflow tank 18 and reattach the floating substances to the member to be cleaned. It is also configured to make it possible to prevent.

(その他)
処理液2は、洗浄目的や被洗浄部材1の種類に応じて任意に選択され、有機溶剤等の有機系の処理液であってもよいし、無機系の処理液であってもよい。こうした処理液2は、通常、図1中に示すバルブを任意に操作することにより、図1に示す経路内を循環させて用いられる。処理液2の循環、処理槽11への供給、及びシャワーノズル21への供給は、各種の方法で行うことができる。
(Other)
The processing liquid 2 is arbitrarily selected according to the purpose of cleaning and the type of the member 1 to be cleaned, and may be an organic processing liquid such as an organic solvent, or may be an inorganic processing liquid. Such a treatment liquid 2 is normally used by circulating in the path shown in FIG. 1 by arbitrarily operating the valve shown in FIG. Circulation of the treatment liquid 2, supply to the treatment tank 11, and supply to the shower nozzle 21 can be performed by various methods.

例えば処理液浸漬の段階では、処理液2はポンプ循環で処理槽11に供給することができる。一方、処理液噴射の段階では、キャニスター71内に入れた処理液2をガス(空気、窒素ガス等)で加圧(通常、0.2MPa〜0.6MPa程度)し、高圧状態でキャニスター71から一気に送り出し、シャワーノズル21の先端の処理液噴射口から排出させることが好ましい。キャニスター71から送られる処理液2は、高い圧力でシャワー噴射するため、薄い膜でも瞬時に剥がすことができる。   For example, at the stage of the treatment liquid immersion, the treatment liquid 2 can be supplied to the treatment tank 11 by pump circulation. On the other hand, at the stage of processing liquid injection, the processing liquid 2 placed in the canister 71 is pressurized (usually about 0.2 MPa to 0.6 MPa) with a gas (air, nitrogen gas, etc.), and from the canister 71 in a high pressure state. It is preferable to send it out at a stretch and discharge it from the treatment liquid jet at the tip of the shower nozzle 21. Since the treatment liquid 2 sent from the canister 71 is shower-jetted at a high pressure, even a thin film can be peeled off instantaneously.

また、処理液2は、処理液脱気装置91により処理されたものであってもよい。処理液脱気装置91で脱気処理された処理液2は、例えば微細パターンの隙間にも浸透し易い。その結果、処理液2を用いた洗浄を効果的に行うことができる。特に、超音波洗浄装置35を用いた場合に好ましく、洗浄効率を向上させることができる。脱気処理した処理液2を用いた応用例としては、超音波洗浄の効果を増して処理時間を短縮することができたり、超音波洗浄の効果が隅々にまで行き渡ることによる歩留まりを向上させることができたり、処理しない処理液に比べて処理温度を低くすることができたりすることができる。   Further, the processing liquid 2 may be processed by the processing liquid degassing device 91. The treatment liquid 2 deaerated by the treatment liquid deaerator 91 is likely to penetrate into the gaps between the fine patterns, for example. As a result, cleaning using the treatment liquid 2 can be performed effectively. In particular, it is preferable when the ultrasonic cleaning device 35 is used, and the cleaning efficiency can be improved. As an application example using the degassed treatment liquid 2, it is possible to shorten the treatment time by increasing the effect of ultrasonic cleaning, or to improve the yield by spreading the effect of ultrasonic cleaning to every corner. Or the processing temperature can be lowered as compared with a processing solution that is not processed.

1 被洗浄部材(半導体基板)
2 処理液
10 洗浄装置
11 処理槽
15 収容手段(収容カセット)
17 往復動手段(被洗浄部材用)
18 オーバーフロー槽
21 処理液噴射手段(ノズル)
27 往復動手段(処理液噴射手段用)
31 処理液排出手段(排出口)
35 超音波照射手段(超音波洗浄装置)
41 回収手段(回収網)
51 半導体基板
52 レジスト部
53 金属薄膜
54 被洗浄物(不要物)
1 Member to be cleaned (semiconductor substrate)
2 treatment liquid 10 cleaning device 11 treatment tank 15 accommodation means (accommodation cassette)
17 Reciprocating means (for cleaned member)
18 Overflow tank 21 Treatment liquid injection means (nozzle)
27 Reciprocating means (for processing liquid injection means)
31 Treatment liquid discharge means (discharge port)
35 Ultrasonic irradiation means (ultrasonic cleaning equipment)
41 Collection means (collection network)
51 Semiconductor substrate 52 Resist part 53 Metal thin film 54 Object to be cleaned (unnecessary object)

Claims (4)

隣接する被洗浄部材が所定間隔を置いて並置された複数の被洗浄部材を、鉛直方向直立姿勢にて処理液中に沈めた状態で配置する被洗浄部材配置ステップと、
前記複数の被洗浄部材に向けて処理液を噴射する処理液噴射手段の処理液噴射口を、処理液中に沈めて前記複数の被洗浄部材の上方に配置する処理液噴射口配置ステップと、
前記複数の被洗浄部材と前記処理液噴射口とが処理液に沈められた状態が保持されながら、前記複数の被洗浄部材に向けて前記処理液噴射口から処理液を噴射しつつ、前記複数の被洗浄部材を沈めていた処理液と前記処理液噴射口から噴射された処理液との排出を行うことで、前記複数の被洗浄部材に形成されている被洗浄物を除去する洗浄ステップとを有し、
前記洗浄ステップは、処理液中での前記複数の被洗浄部材と前記処理液噴射口との互いに対する相対的な水平方向往復動及び鉛直方向往復動の少なくともいずれか一方の往復動を周期的にもたらす往復動ステップを有し、前記洗浄ステップにおける前記複数の被洗浄部材に向けての処理液の噴射は、前記相対的な水平方向往復動及び鉛直方向往復動の少なくともいずれか一方の往復動がなされている状態で行なわれる、洗浄方法。
A member-to-be-cleaned arrangement step that arranges a plurality of members to be cleaned arranged adjacent to each other at predetermined intervals in a state where the members to be cleaned are submerged in the processing liquid in a vertical upright posture;
A treatment liquid ejection port disposing step in which a treatment liquid ejection port of a treatment liquid ejection unit that ejects a treatment liquid toward the plurality of members to be cleaned is submerged in the treatment liquid and disposed above the plurality of members to be cleaned;
While the state where the plurality of members to be cleaned and the processing liquid ejection ports are submerged in the processing liquid is maintained, the plurality of the plurality of members to be cleaned are ejected from the processing liquid ejection ports toward the plurality of members to be cleaned. A cleaning step of removing the object to be cleaned formed on the plurality of members to be cleaned by discharging the processing liquid that has sunk the member to be cleaned and the processing liquid ejected from the processing liquid ejection port; Have
The cleaning step periodically performs reciprocation of at least one of a horizontal reciprocation and a vertical reciprocation of the plurality of members to be cleaned and the treatment liquid ejection port relative to each other in the treatment liquid. A reciprocating step to be provided, and the jetting of the processing liquid toward the plurality of members to be cleaned in the cleaning step is performed by reciprocating at least one of the relative horizontal reciprocating motion and the vertical reciprocating motion. A cleaning method performed in a state where it is made.
当該洗浄方法は、前記洗浄ステップの前に浸漬ステップを有し、
前記浸漬ステップは、隣接する被洗浄部材が所定間隔を置いて並置されて鉛直方向直立姿勢にて処理液中に沈められた状態で配置されている前記複数の被洗浄部材に向けて超音波を照射する超音波照射ステップと、処理液中での前記複数の被洗浄部材の水平方向往復動及び鉛直方向往復動の少なくともいずれか一方の往復動を周期的にもたらす往復動ステップとを有し、
前記浸漬ステップにおける前記複数の被洗浄部材に向けての超音波の照射は、前記複数の被洗浄部材の水平方向往復動及び鉛直方向往復動の少なくともいずれか一方の往復動がなされている状態で行なわれる、請求項1に記載の洗浄方法。
The cleaning method includes a dipping step before the cleaning step,
In the dipping step, ultrasonic waves are directed toward the plurality of members to be cleaned that are arranged in a state where adjacent members to be cleaned are juxtaposed at predetermined intervals and submerged in the processing liquid in a vertically upright posture. An ultrasonic irradiation step for irradiating; and a reciprocating step for periodically causing reciprocation of at least one of a horizontal reciprocation and a vertical reciprocation of the plurality of members to be cleaned in the treatment liquid,
Irradiation of ultrasonic waves toward the plurality of members to be cleaned in the dipping step is performed in a state where at least one of a horizontal reciprocation and a vertical reciprocation of the plurality of members to be cleaned is performed. The cleaning method according to claim 1, which is performed.
複数の被洗浄部材を処理液中に沈めた状態で配置する処理槽と、
前記複数の被洗浄部材の各被洗浄部材を、鉛直方向直立姿勢にて所定間隔を置いて並置して収容する収容手段であって、前記処理槽に対して可動に配設される収容手段と、
前記処理槽の上部に配置され、前記複数の被洗浄部材に向けて処理液を噴射する処理液噴射口を有する処理液噴射手段であって、前記処理槽に対して可動に配設される処理液噴射手段と、
前記処理槽の下部に配置され、該処理槽内の処理液を排出する処理液排出手段と、
を有する洗浄装置であって、
前記複数の被洗浄部材と前記処理液噴射口との互いに対する相対的な水平方向往復動及び鉛直方向往復動の少なくともいずれか一方の往復動を周期的にもたらす往復動手段と、
前記処理液噴射手段と前記処理液排出手段と前記往復動手段とを制御する制御手段とを更に有し、
前記制御手段は、前記複数の被洗浄部材と前記処理液噴射口とが処理液に沈められた状態が保持された状態で、なお且つ、前記相対的な水平方向往復動及び鉛直方向往復動の少なくともいずれか一方の往復動がなされている状態で、前記処理液噴射口から処理液を噴射することにより、前記複数の被洗浄部材に形成されている被洗浄物を除去し、前記複数の被洗浄部材を沈めていた処理液と前記処理液噴射口から噴射させた処理液とともに排出するように、前記処理液噴射手段と前記往復動手段と前記処理液排出手段とを制御する、洗浄装置。
A treatment tank in which a plurality of members to be cleaned are submerged in the treatment liquid; and
A storage means for storing the members to be cleaned of the plurality of members to be cleaned in parallel in a vertically standing posture at a predetermined interval; ,
A treatment liquid ejecting means that is disposed above the treatment tank and has a treatment liquid ejection port that ejects a treatment liquid toward the plurality of members to be cleaned. Liquid ejecting means;
A treatment liquid discharging means disposed at a lower portion of the treatment tank and discharging the treatment liquid in the treatment tank;
A cleaning device comprising:
Reciprocating means for periodically causing reciprocation of at least one of the horizontal reciprocation and the vertical reciprocation of the plurality of members to be cleaned and the treatment liquid injection port relative to each other;
A control means for controlling the treatment liquid ejection means, the treatment liquid discharge means, and the reciprocating means;
The control means is in a state in which the plurality of members to be cleaned and the processing liquid ejection port are submerged in the processing liquid, and the relative horizontal reciprocation and vertical reciprocation are maintained. In a state where at least one of the reciprocating motions is performed, the processing liquid is ejected from the processing liquid ejection port, thereby removing the objects to be cleaned formed on the plurality of objects to be cleaned, and the plurality of objects to be cleaned. A cleaning apparatus that controls the processing liquid ejecting means, the reciprocating means, and the processing liquid discharging means so as to be discharged together with the processing liquid submerged in the cleaning member and the processing liquid ejected from the processing liquid ejection port.
当該洗浄装置は、前記収容手段により収容され、処理液中に沈められている前記複数の被洗浄部材に向けて超音波を照射する超音波照射手段を有し、
前記制御手段は、前記処理液噴射手段による処理液の噴射の前に、前記複数の被洗浄部材の水平方向往復動及び鉛直方向往復動の少なくともいずれか一方の往復動がなされている状態で、前記複数の被洗浄部材に向けて超音波を照射するように、前記往復動手段と前記超音波照射手段とを制御する、請求項3に記載の洗浄装置。
The cleaning apparatus includes an ultrasonic irradiation unit that irradiates ultrasonic waves toward the plurality of members to be cleaned that are stored in the storage unit and submerged in the processing liquid.
The control means is in a state in which at least one of the horizontal reciprocation and the vertical reciprocation of the plurality of members to be cleaned is reciprocated before the treatment liquid is ejected by the treatment liquid ejection means. The cleaning apparatus according to claim 3, wherein the reciprocating means and the ultrasonic irradiation means are controlled so as to apply ultrasonic waves toward the plurality of members to be cleaned.
JP2016119268A 2016-06-15 2016-06-15 Cleaning method and cleaning device Pending JP2017224734A (en)

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