TW201801170A - Cleaning method and cleaning device - Google Patents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
Abstract
Description
本發明係關於半導體基板等被洗淨構件的洗淨方法及洗淨裝置。 The present invention relates to a cleaning method and a cleaning device for a member to be cleaned, such as a semiconductor substrate.
例如，在半導體基板上製作金屬薄膜圖案的方法之一有掀離法(lift-off method)。該掀離法係在半導體基板上形成阻劑圖案後，再形成金屬薄膜，然後，藉由進行將形成在半導體基板上的阻劑圖案及形成在該阻劑圖案上的金屬薄膜去除的洗淨處理，而製得金屬薄膜圖案。 For example, one method of forming a metal thin film pattern on a semiconductor substrate is a lift-off method. The lift-off method is to form a metal thin film after forming a resist pattern on a semiconductor substrate, and then perform cleaning by removing the resist pattern formed on the semiconductor substrate and the metal thin film formed on the resist pattern. Processing to obtain a metal thin film pattern.
此種掀離法的洗淨處理中，為了能對複數塊半導體基板同時進行洗淨處理，而且，為了可避免該洗淨處理時去除的金屬薄膜再附著於半導體基板的情形，具有：處理槽，用以供複數個被洗淨構件沈入於處理液；噴射手段，配置在處理槽的上部，藉以向配置於處理槽內的複數個被洗淨構件噴射處理液，及排出手段，配置於處理槽下部，以排出處理槽內的處理液；且以一面保持複數個被洗淨構件沉入處理槽內處理液的狀態一面自噴射手段噴射處理液，同時自排出手段排出處理液的方式執行控制的洗淨裝置已揭露於世(參照專利文獻1)。 In the cleaning process of such a lift-off method, a processing tank is provided in order to allow a plurality of semiconductor substrates to be simultaneously cleaned and to prevent the metal thin film removed during the cleaning process from adhering to the semiconductor substrate. For the plurality of cleaned members to be sunk into the processing liquid; the spraying means is arranged at the upper part of the processing tank, so as to spray the processing liquid to the plurality of cleaned members arranged in the processing tank, and the discharging means is arranged at The lower part of the processing tank is used to discharge the processing liquid in the processing tank; and while the plurality of cleaned members are kept sinking into the processing tank, the processing liquid is sprayed from the spraying means while the processing liquid is discharged from the discharging means. A controlled cleaning device has been disclosed in the world (see Patent Document 1).
[專利文獻1]日本特開2014-239141號公報 [Patent Document 1] Japanese Patent Laid-Open No. 2014-239141
若依專利文獻1所揭示的洗淨方法，係一邊保持複數個被洗淨構件沉入處理液的狀態一邊進行處理液自噴射手段的噴射及處理液自排出手段的排出，故可將藉噴射的處理液自被洗淨構件去除的被洗淨物(無用物)和沉入有被洗淨構件的處理液及所噴射的處理液一起排出，且可防止被洗淨物以浮遊狀態再附著於被洗淨構件，並且，其與逐片進行洗淨的方法不同，因可將複數個被洗淨構件集中處理，故能提高處理能力。 According to the cleaning method disclosed in Patent Document 1, the spraying of the processing liquid from the spraying means and the discharging of the processing liquid from the discharging means are performed while maintaining the state where the plurality of cleaned members are sinking into the processing liquid. The treatment liquid removed from the cleaned member (unwanted objects) is discharged together with the treatment liquid sinking into the cleaned member and the sprayed treatment liquid, and it can prevent the cleaned matter from re-adhering in a floating state. It is different from the method of cleaning one by one for the cleaned members. Since a plurality of cleaned members can be processed collectively, the processing capacity can be improved.
不過，在要求製品多樣化的趨勢正進展的現況下，半導體基板或阻劑以及金屬薄膜等的構成材料、或形成在半導體基板上的金屬薄膜圖案也有多歧化的傾向，故構成材料或金屬薄膜圖案雖有所不同，仍然期望有可以更優異的方式進行被洗淨物之去除的洗淨方法及洗淨裝置。 However, under the current situation where the trend of diversification of products is being advanced, constituent materials such as semiconductor substrates, resists, and metal thin films, or metal thin film patterns formed on semiconductor substrates also tend to be disproportionated. Therefore, constituent materials or metal thin films Although the patterns are different, a cleaning method and a cleaning device that can remove the object to be washed in a more excellent manner are still desired.
構成材料或金屬薄膜圖案不同時，對半導體基板進行阻劑部及該阻劑部上金屬薄膜之去除的阻劑部及金屬薄膜剝離，在片段式細片狀進行時、或連續式板狀進行時等，就要以不同的樣態進行，而按照其剝離樣態，剝離所需的力量也會不同。 When the constituent material or the metal thin film pattern is different, the semiconductor substrate is subjected to the resist portion and the resist portion and the metal thin film to be removed from the resist portion, and the resist portion and the metal thin film are peeled off. Time, it is necessary to carry out in different forms, and according to its peeling form, the force required for peeling will be different.
在作為被洗淨構件的複數個半導體基板沉入處理液的狀態下，向該複數個半導體基板噴射處理液，以進行 去除各半導體基板上之阻劑部及該阻劑部上之金屬薄膜的裝置中，構成材料或金屬薄膜圖案即使有所不同，為了能夠按照期望進行去除，更確實地將預定的高壓力均等地作用在各半導體基板上之阻劑部及該阻劑部上之金屬薄膜的技術實現即成為一個課題。 In a state in which a plurality of semiconductor substrates, which are members to be cleaned, are immersed in a processing liquid, the processing liquid is sprayed onto the plurality of semiconductor substrates to perform In the device for removing the resist portion on each semiconductor substrate and the metal thin film on the resist portion, even if the constituent material or the metal thin film pattern is different, in order to be able to remove it as desired, a predetermined high pressure is more evenly distributed evenly. The technical realization of the resist portion acting on each semiconductor substrate and the metal thin film on the resist portion becomes a problem.
作為用以解決這種課題的一個手段，可考慮將噴射處理液用噴嘴的處理液噴射口分別配置於鄰接的半導體基板間的各個空間，更確實地使預定的高壓力均等地施加在鄰接半導體基板間的各空間。 As a means for solving such a problem, it is conceivable to arrange the processing liquid ejection ports of the nozzles for spraying the processing liquid in respective spaces between adjacent semiconductor substrates, and to more surely apply a predetermined high pressure evenly to the adjacent semiconductors. Spaces between substrates.
然而，採行這種因應方式時，依照鄰接的半導體基板間的空間大小，會產生必須因應該空間大小而設計或製造特殊噴嘴的情形，且形成成本性或量產性的課題。 However, when this response method is adopted, depending on the size of the space between adjacent semiconductor substrates, special nozzles must be designed or manufactured in accordance with the size of the space, and a problem of cost or mass production arises.
本發明係有鑑於上述課題而研創者，其目的在提供在使複數個半導體基板等被洗淨構件沉入處理液的狀態下，向複數個被洗淨構件噴射處理液，不論被洗淨構件的構成材料或形成在該被洗淨構件上的被洗淨物形態為何，均可更確實地按照期望進行被洗淨物的去除，且成本性也優異的洗淨方法及洗淨裝置。 The present invention has been developed in view of the above-mentioned problems, and an object thereof is to provide a state in which a plurality of cleaned members such as semiconductor substrates are immersed in a treatment liquid, and the treatment liquid is sprayed onto the plurality of cleaned members, regardless of the cleaned members What is the shape of the material to be cleaned or the shape of the object to be cleaned formed on the member to be cleaned can be removed as desired with more certainty, and a cleaning method and a cleaning device that are also excellent in cost performance.
若依請求項1的發明，係提供一種洗淨方法，具有：被洗淨構件配置步驟，將鄰接的被洗淨構件保持預定間隔並列放置的複數個被洗淨構件以直立於鉛直方向的姿勢沉入處理液中的狀態加以配置；處理液噴射口配置步驟，將向前述複數個被洗淨構件 噴射處理液之處理液噴射手段的處理液噴射口沉入處理液中並配置在前述複數個被洗淨構件的上方；及洗淨步驟，一邊使前述複數個被洗淨構件及前述處理液噴射口保持沉入處理液的狀態，一邊將處理液從前述處理液噴射口向前述複數個被洗淨構件進行噴射，並藉由將沉入有前述複數個被洗淨構件的處理液與從前述處理液噴射口噴出的處理液進行排出，使形成在前述複數個被洗淨構件的被洗淨物去除，前述洗淨步驟具有往復動作步驟，其係使處理液中的前述複數個被洗淨構件與前述處理液噴射口的彼此間周期性地進行相對式水平方向往復動作及鉛直方向往復動作的至少任一種往復動作，前述洗淨步驟中向前述複數個被洗淨構件噴射處理液的動作係在前述相對式水平方向往復動作及鉛直方向往復動作的至少任一種往復動作正進行中的狀態下執行。 According to the invention of claim 1, a cleaning method is provided, which includes a step of arranging the cleaned members, and a plurality of cleaned members placed adjacent to each other at a predetermined interval in parallel to be placed in a vertical posture. Placed in the state of being immersed in the processing liquid; the step of arranging the processing liquid ejection port will be applied to the aforementioned plurality of cleaned members The processing liquid spraying port of the processing liquid spraying means for spraying the processing liquid sinks into the processing liquid and is disposed above the plurality of cleaned members; and a washing step, while spraying the plurality of cleaned members and the processing liquid While keeping the state of sinking the processing liquid in the mouth, the processing liquid is sprayed from the processing liquid spraying port to the plurality of cleaned members, and the processing liquid sinking the plurality of cleaned members and the processing liquid The processing liquid sprayed from the processing liquid ejection port is discharged to remove the objects to be cleaned formed in the plurality of cleaned members. The cleaning step includes a reciprocating operation step, which is to clean the plurality of cleansed components in the processing liquid. The member and the treatment liquid ejection port periodically perform at least one of a reciprocating movement in a horizontal reciprocating motion and a reciprocating movement in the vertical direction. The cleaning liquid is sprayed with the treatment liquid onto the plurality of cleaned members in the cleaning step. This is performed in a state where at least any one of the aforementioned reciprocating motion in the horizontal direction and the reciprocating motion in the vertical direction is in progress.
亦即，請求項1的發明中，係在將形成於複數個被洗淨構件的被洗淨物去除並洗淨之際，可藉由一邊使複數個被洗淨構件及處理液噴射口保持沉入於處理液的狀態，一邊將處理液從處理液噴射口向複數個被洗淨構件噴射，同時使沉入有複數個被洗淨構件的處理液與從處理液噴射口噴出的處理液排出，使被去除的被洗淨物和這些處理液一起排出，從而，得以抑制浮遊於液中的已去除之被洗淨物再附著於被洗淨構件的情形，使被洗淨構件獲得更良好的洗淨。 That is, in the invention of claim 1, when the object to be cleaned formed in the plurality of members to be cleaned is removed and washed, the plurality of members to be cleaned and the treatment liquid ejection port can be held by one side. While being submerged in the processing liquid, the processing liquid is sprayed from the processing liquid ejection port to the plurality of cleaned members, and at the same time, the processing liquid having the plurality of cleaned members is sunk and the processing liquid ejected from the processing liquid ejection port Discharge, so that the removed objects to be cleaned are discharged together with these treatment liquids, so that the removed objects to be floated in the liquid can be prevented from adhering to the components to be cleaned, so that the components to be cleaned can be more effectively removed. Good washing.
而且，請求項1的發明中，係藉由在處理液中對於複數個被洗淨構件與處理液噴射口彼此的相對式水平方 向往復動作及鉛直方向往復動作的至少任一種往復動作正進行中的狀態下，執行洗淨步驟中處理液向複數個被洗淨構件的噴射，使作為處理液噴射手段的噴嘴不需要特別設計或製造，即得以更均等且強力(高壓)的處理液向複數個被洗淨構件進行液中噴流，不論構成被洗淨構件的材料或形成在該被洗淨構件上的被洗淨物的形態為何，均可提供得以更優異的方式按照期望去除被洗淨物，而且，成本性也很優異的洗淨方法。 Further, in the invention of claim 1, the relative horizontal direction of each of the plurality of cleaned members and the processing liquid ejection ports in the processing liquid is relative to each other. In the state where at least one of the reciprocating action and the reciprocating action in the vertical direction is in progress, the spraying of the processing liquid to the plurality of cleaned members in the cleaning step is performed, so that the nozzle as the spraying means of the processing liquid does not need to be specially designed. Or manufacture, that is, a more even and powerful (high pressure) treatment liquid can be sprayed into the plurality of cleaned members, regardless of the materials constituting the cleaned members or the objects to be cleaned formed on the cleaned members. Regardless of the form, it is possible to provide a cleaning method that can remove the object to be washed in a more excellent manner as desired, and also has excellent cost performance.
依據請求項2的發明，係在前述洗淨步驟之前具有浸漬步驟，前述浸漬步驟具有：超音波照射步驟，向鄰接的被洗淨構件以保持預定間隔並列放置且以直立於鉛直方向的姿勢沉入處理液中的狀態配置的前述複數個被洗淨構件照射超音波；及往復動作步驟，使處理液中的前述複數個被洗淨構件周期性地進行水平方向往復動作及鉛直方向往復動作之至少任一種往復動作，前述浸漬步驟中向前述複數個被洗淨構件進行的超音波照射係在前述複數個被洗淨構件的水平方向往復動作與鉛直方向往復動作之至少任一種往復動作正進行中的狀態進行。 According to the invention of claim 2, the impregnation step is provided before the washing step, and the impregnation step includes an ultrasonic irradiation step of placing the adjacent washed members side by side at a predetermined interval and sinking in a vertical posture. The aforementioned plurality of cleaned members arranged in the processing liquid are irradiated with ultrasonic waves; and a reciprocating operation step, which causes the aforementioned plurality of cleaned members in the processing liquid to periodically perform reciprocating movements in the horizontal direction and vertical reciprocating movements. At least any reciprocating action, and the ultrasonic irradiation to the plurality of cleaned members in the dipping step is at least any reciprocating action of the reciprocating action in the horizontal direction and the vertical direction of the plurality of cleaned members. The status is in progress.
亦即，請求項2的發明中，係藉由在處理液噴射之前，在複數個被洗淨構件的水平方向往復動作及鉛直方向往復動作的至少任一種往復動作正進行中的狀態下照射超音波，使對被洗淨構件的洗淨能力得以提升，而且，將本發明應用在掀離法時，可更優異地進行阻劑部的膨潤及被洗淨 物的去除。 That is, in the invention of claim 2, the irradiation is performed in a state in which at least one of the reciprocating action of the horizontally reciprocating action and the vertical reciprocating action of the plurality of cleaned members is in progress before the treatment liquid is ejected. The sonic wave improves the cleaning ability of the member to be cleaned, and when the present invention is applied to the lift-off method, swelling and washing of the resist portion can be performed more excellently. Removal.
依據請求項3的發明，係提供一種洗淨裝置，具有：處理槽，供複數個被洗淨構件以沉入於處理液中的狀態配置；收容手段，將前述複數個被洗淨構件的各被洗淨構件以直立於鉛直方向的姿勢保持預定間隔並列放置收容，且以可動方式配設在前述處理槽；處理液噴射手段，配置在前述處理槽的上部，並具有向前述複數個被洗淨構件噴射處理液的處理液噴射口，且以可動方式配設在前述處理槽；及處理液排出手段，配置在前述處理槽的下部，用以排出該處理槽內的處理液，並且具有：往復動作手段，使對於前述複數個被洗淨構件與前述處理液噴射口彼此的相對式水平方向往復動作與鉛直方向往復動作的至少任一種往復動作周期性地進行；及控制手段，控制前述處理液噴射手段與前述處理液排出手段及前述往復動作手段，前述控制手段係在前述複數個被洗淨構件與前述處理液噴射口保持沉入處理液的狀態下，並且在前述相對式水平方向往復動作與鉛直方向往復動作的至少任一種往復動作正進行中的狀態下，藉由從前述處理液噴射口噴射處理液，將形成在前述複數個被洗淨構件的被洗淨物去除，並對前述處理液噴射手段與前述往復動作手段及前述處理液排出手 段進行控制，俾將沉入有前述複數個被洗淨構件的處理液及從前述處理液噴射口噴出的處理液一起排出。 According to the invention of claim 3, there is provided a cleaning device having a processing tank in which a plurality of components to be cleaned are arranged in a state of being submerged in a processing liquid, and a storage means for each of the plurality of components to be cleaned. The members to be cleaned are placed in parallel at a predetermined interval in a posture of standing in a vertical direction, and are arranged in the processing tank in a movable manner; the processing liquid spraying means is arranged on the upper part of the processing tank, and has a plurality of objects to be washed. The cleaning member spray port of the cleaning solution is sprayed by the net member, and is movably disposed in the processing tank; and the processing liquid discharge means is arranged at the lower part of the processing tank to discharge the processing liquid in the processing tank, and has: The reciprocating means periodically causes at least one reciprocating action of the relative horizontal reciprocating action and the vertical reciprocating action of the plurality of cleaned members and the processing liquid ejection port to each other; and a control means that controls the processing The liquid ejecting means, the processing liquid discharge means, and the reciprocating action means, the control means is based on the plurality of The cleaning member and the processing liquid ejection port are kept in a state of being immersed in the processing liquid, and in a state in which at least one of the relative horizontal reciprocating motion and the vertical reciprocating motion is in progress, the processing is performed from the processing The liquid ejection port ejects the treatment liquid, removes the objects to be cleaned formed in the plurality of washed members, and discharges the treatment liquid ejection means, the reciprocating action means, and the treatment liquid discharge hand The stage performs control, and the treatment liquid in which the plurality of cleaned members are sunk is discharged together with the treatment liquid ejected from the treatment liquid ejection port.
根據請求項4的發明，該洗淨裝置具有超音波照射手段，其係藉前述收容手段予以收容，且向沉入處理液中的前述複數個被洗淨構件照射超音波， 前述控制手段係在藉前述處理液噴射手段噴射處理液之前控制前述往復動作手段及前述超音波照射手段，俾在前述複數個被洗淨構件的水平方向往復動作與鉛直方向往復動作的至少任一種往復動作正進行中的狀態下，向前述複數個被洗淨構件照射超音波。 According to the invention of claim 4, the cleaning device has an ultrasonic irradiation means, which is contained by the aforementioned storage means, and irradiates the ultrasonic waves to the plurality of cleaned members sunk in the processing liquid, The control means controls the reciprocating motion means and the ultrasonic irradiation means before spraying the processing liquid by the processing liquid spraying means, and at least one of the horizontal reciprocating motion and the vertical reciprocating motion of the plurality of cleaned members. While the reciprocating operation is in progress, ultrasonic waves are irradiated onto the plurality of cleaned members.
若依各請求項的發明，可在從被洗淨構件去除被洗淨物的洗淨方法或者洗淨裝置中獲致下述的共通效果，亦即，可抑制已去除的被洗淨物再附著於被洗淨構件的情況，而且，作為處理液噴射手段的噴嘴不需特殊設計或製造，就可向複數個被洗淨構件施行更均等且強力(高壓)的處理液之液中噴流，不論構成被洗淨構件的材料或形成於該被洗淨構件上的被洗淨物的形態為何，均可以更優異的方式按照期望去除被洗淨物。特別適用於將形成在被洗淨構件上的阻劑部剝離並去除，僅保留所期望的金屬圖案的掀離法。 According to the invention of each claim, the following common effect can be obtained in the cleaning method or the cleaning device for removing the object to be cleaned from the object to be cleaned, that is, the re-attachment of the object to be removed can be suppressed. In the case of the component to be cleaned, and the nozzle used as the processing liquid spraying means does not need special design or manufacture, it is possible to apply a more uniform and strong (high pressure) processing liquid to the plurality of components to be cleaned, regardless of the What is the shape of the material constituting the member to be cleaned or the object to be cleaned formed on the member to be cleaned can be removed in a more excellent manner as desired. It is especially suitable for the lift-off method which peels off and removes the resist part formed on the to-be-cleaned member, leaving only a desired metal pattern.
1‧‧‧被洗淨構件(半導體基板) 1‧‧‧ cleaned member (semiconductor substrate)
2‧‧‧處理液 2‧‧‧ treatment liquid
10‧‧‧洗淨裝置 10‧‧‧washing device
11‧‧‧處理槽 11‧‧‧Treatment tank
12‧‧‧處理槽的上部 12‧‧‧ upper part of treatment tank
14‧‧‧匣座構件 14‧‧‧ Casing Block
15‧‧‧收容手段(收容匣) 15‧‧‧ Containment Means (Container Box)
16‧‧‧匣保持構件 16‧‧‧ cassette holding member
17‧‧‧往復動作手段(被洗淨構件用) 17‧‧‧Reciprocating action means (for cleaned components)
18‧‧‧溢流槽 18‧‧‧ overflow tank
21‧‧‧處理液噴射手段(噴嘴) 21‧‧‧ treatment liquid spraying means (nozzle)
22‧‧‧噴淋配管 22‧‧‧Spraying Piping
23‧‧‧保持構件 23‧‧‧ holding member
27‧‧‧往復動作手段(處理液噴射手段用) 27‧‧‧Reciprocating action means (for treatment liquid ejection means)
29‧‧‧處理液通過口 29‧‧‧ treatment liquid through the mouth
31‧‧‧處理液排出手段(排出口) 31‧‧‧ treatment liquid discharge means (discharge port)
35‧‧‧超音波照射手段(超音波洗淨裝置) 35‧‧‧ Ultrasonic irradiation means (ultrasonic cleaning device)
41‧‧‧回收手段(回收網) 41‧‧‧Recycling means (recycling net)
51‧‧‧半導體基板 51‧‧‧semiconductor substrate
52‧‧‧阻劑部 52‧‧‧Resistor Department
53‧‧‧金屬薄膜 53‧‧‧Metal film
54‧‧‧被洗淨物(無用物) 54‧‧‧ Washed (useless)
71‧‧‧處理液鋼瓶 71‧‧‧handling liquid steel cylinder
81‧‧‧循環槽 81‧‧‧Circulation tank
82‧‧‧循環泵 82‧‧‧Circulation pump
83、84、85‧‧‧過濾器 83, 84, 85‧‧‧ filters
86‧‧‧熱交換器 86‧‧‧Heat exchanger
91‧‧‧處理液脫氣裝置 91‧‧‧ treatment liquid degassing device
圖1為本發明洗淨裝置之一實施形態的示意性構成圖。 FIG. 1 is a schematic configuration diagram of an embodiment of a cleaning device of the present invention.
圖2為處理槽內之構成的示意性說明圖。 FIG. 2 is a schematic explanatory diagram of a configuration in a processing tank.
圖3為將處理液從作為處理液噴射手段的噴嘴噴射到 收容在收容手段之被洗淨構件的正面形態說明圖。 Fig. 3 is a process liquid sprayed from a nozzle as a process liquid spraying means to An explanatory diagram of the frontal form of the cleaned member contained in the containing means.
圖4為將處理液從噴嘴噴射到收容在收容手段的被洗淨構件的側面形態說明圖。 FIG. 4 is an explanatory view of a side configuration of a cleaning member sprayed with a processing liquid from a nozzle to a storage means.
圖5為從上側觀看處理槽的俯視圖。 FIG. 5 is a plan view of the processing tank viewed from the upper side.
圖6(a)~(d)為洗淨方法之各步驟的說明圖。 6 (a) to (d) are explanatory diagrams of each step of the washing method.
圖7(A)~(D)為掀離法的說明圖。 7 (A) to (D) are explanatory diagrams of the lift-off method.
圖8為藉往復動作手段進行的收容手段之水平方向往復動作及鉛直方向往復動作的動作示意圖。 FIG. 8 is a schematic diagram of the horizontal reciprocating motion and the vertical reciprocating motion of the storage means by the reciprocating motion means.
以下，一面參照附圖一面就本發明洗淨方法及洗淨裝置之一實施形態加以說明。本發明只要具有其技術特徵皆可作各種變形，故不限於以下揭示的具體實施形態。 Hereinafter, one embodiment of the cleaning method and the cleaning device of the present invention will be described with reference to the drawings. The present invention can be modified in various ways as long as it has the technical features, so it is not limited to the specific embodiments disclosed below.
可應用本發明洗淨方法及洗淨裝置的被洗淨構件並無特別限定，可以種種物件作為洗淨對象。例如圖7所說明，也可為應用掀離法的處理基板。該處理基板具有：設於半導體基板51上的阻劑部52、及設於該阻劑部52上的金屬薄膜53。但，也可為此外的其他洗淨對象，例如，可為以印刷基板等為代表的各種電路基板，也可為在玻璃基板或矽基板上設有TFT迴路的電路基板，或者也可為其他基板。不論是哪一種被洗淨構件，只要是得以防止某些無用物以浮遊狀態再附著於被洗淨構件，並且可將複數個被洗淨構件集中同時處理，期能提高處理能力的被洗淨構件皆可，該無用物係如圖7所揭示的由阻劑部52及設於其上的金屬薄膜53所構成的被洗淨物54。 The cleaning member to which the cleaning method and the cleaning device of the present invention can be applied is not particularly limited, and various objects can be used as a cleaning target. For example, as illustrated in FIG. 7, it may be a processing substrate to which a lift-off method is applied. The processing substrate includes a resist portion 52 provided on the semiconductor substrate 51 and a metal thin film 53 provided on the resist portion 52. However, it may also be other cleaning objects. For example, it may be various circuit substrates typified by printed substrates, etc., it may be a circuit substrate provided with a TFT circuit on a glass substrate or a silicon substrate, or it may be other Substrate. No matter which kind of cleaned member is, as long as it can prevent some useless objects from re-adhering to the cleaned member in a floating state, and multiple cleaned members can be processed at the same time in order to improve the processing capacity of the cleaned member. The component can be used. The useless material is a cleaned object 54 composed of a resist portion 52 and a metal thin film 53 provided thereon as shown in FIG. 7.
下文中，將一邊說明圖1、圖2及圖6等所示的本發明一實施形態的洗淨裝置10的構成，一邊說明構成其洗淨方法的各步驟。 Hereinafter, the configuration of the cleaning device 10 according to the embodiment of the present invention shown in FIGS. 1, 2, 6, and the like will be described, and each step constituting the cleaning method will be described.
本發明的洗淨方法的構成，概言之，具有：被洗淨構件配置步驟，將複數個被洗淨構件以沉入處理液中的狀態進行配置；處理液噴射口配置步驟，將處理液噴射手段的處理液噴射口配置於複數個被洗淨構件的上方；及洗淨步驟，將形成在複數個被洗淨構件的被洗淨物去除。本實施形態的構成中，復在洗淨步驟之前包含將被洗淨構件充分浸漬於處理液以謀求提升洗淨能力的浸漬步驟。 The structure of the cleaning method of the present invention includes, in summary, a step of arranging the cleaned members and arranging a plurality of the members to be immersed in the processing liquid; a step of arranging the processing liquid ejection port to place the processing liquid The treatment liquid spraying port of the spraying means is disposed above the plurality of cleaned members; and the cleaning step removes the cleaned matter formed on the plurality of cleaned members. The configuration of this embodiment includes an immersion step in which the member to be cleaned is sufficiently immersed in the treatment liquid before the cleaning step to improve the cleaning ability.
(被洗淨構件配置步驟) (Cleaning member arrangement steps)
本實施形態的洗淨方法中，首先，係實施被洗淨構件配置步驟，使收容於收容匣15的被洗淨構件1設置在處理槽11內的既定位置，然後，如圖6(a)所示，加入處理液2，使其蓋過被洗淨構件1。 In the cleaning method of this embodiment, first, a step of arranging the members to be cleaned is performed, and the member 1 to be cleaned stored in the storage box 15 is set at a predetermined position in the processing tank 11, and then, as shown in FIG. 6 (a) As shown, the treatment liquid 2 is added to cover the member 1 to be cleaned.
圖1、圖2及圖6所示的本發明一實施形態的洗淨裝置10具有：處理槽11，供複數個被洗淨構件1以沉入處理液中的狀態配置於其中；收容手段，供複數個被洗淨構件1的各構件以直立於鉛直方向的姿勢保持預定間隔並列放置並收容於其中，以實現有效率的批式處理，並以可動方式配設在處理槽11，而在該被洗淨構件配置步驟中，複數個被洗淨構件係收容在作為收容手段之一構成要素的收容匣15，且以沉入處理液中的狀態配置在處理槽11內。亦即，被洗淨構件配置步驟中，複數個被洗淨構件係以直立於鉛直方向的姿勢保持預定間隔並列放置的狀態配置於處理液中。 The cleaning device 10 according to the embodiment of the present invention shown in FIGS. 1, 2 and 6 includes a processing tank 11 in which a plurality of cleaned members 1 are arranged in a state of being submerged in a processing liquid; a storage means, Each component of the plurality of cleaned components 1 is placed in a vertical position and placed in a predetermined space in parallel to be accommodated therein, so as to realize efficient batch processing, and is disposed in the processing tank 11 in a movable manner. In the step of arranging the cleaned members, the plurality of cleaned members are housed in a storage box 15 which is a constituent element of the storage means, and are arranged in the processing tank 11 in a state of being sunk in the processing liquid. In other words, in the step of arranging the cleaned members, the plurality of cleaned members are arranged in the processing liquid in a state of being placed in parallel while maintaining a predetermined interval in a posture standing in the vertical direction.
收容匣15較佳為使用例如圖2及圖3所示的匣子(cassette)。收容匣15的大小、形狀、材質則無特別限定，可考量要收容的被洗淨構件1的數量及大小、處理液的種類等來選擇。可為一般的汎用品，也可以是為專用而設計的特製品。例如，可為不銹鋼等金屬成形品、或聚碳酸酯等樹脂成形品等。依此方式，因複數個被洗淨構件1係收容在收容匣15內，故可依各收容匣15運送，結果，得以實現洗淨工程的效率化，可提高處理能力。 The storage box 15 is preferably a cassette such as that shown in FIGS. 2 and 3. The size, shape, and material of the storage box 15 are not particularly limited, and can be selected in consideration of the number and size of the members 1 to be cleaned, the type of the processing liquid, and the like. It can be a general purpose product or a special product designed for special purpose. For example, it may be a metal molded product such as stainless steel, or a resin molded product such as polycarbonate. In this way, since the plurality of cleaned members 1 are contained in the storage box 15, they can be transported according to each storage box 15. As a result, the efficiency of the cleaning process can be realized, and the processing capacity can be improved.
應用於掀離法的處理基板中，欲以儘量大片狀態剝取包含金屬薄膜53與阻劑部52的被洗淨物54時，較理想的收容匣15是以收容匣15的下部設有對應於圖1所示之處理液通過口29的開口部為佳。開口部可為整體式開口，也可為冲孔金屬板之類的開孔形狀。藉由在收容匣15的下部設有此種開口部，以大片狀態剝除的被洗淨物54不會被破壞，可用作為回收手段的回收網41予以捕集。另外，收容匣15的側壁可設或不設開孔或開縫。 In the processing substrate applied to the lift-off method, when it is desired to peel off the cleaned object 54 including the metal thin film 53 and the resist portion 52 in a large state, the ideal storage box 15 is provided with a corresponding lower portion of the storage box 15 The opening of the treatment liquid passage opening 29 shown in FIG. 1 is preferable. The opening portion may be an integral opening, or may be an opening shape such as a punched metal plate. By providing such an opening in the lower portion of the storage box 15, the washed object 54 that has been stripped off in a large state is not damaged, and can be collected by a recovery net 41 as a recovery means. In addition, the side wall of the receiving box 15 may be provided with or without openings or slits.
本實施形態中，處理槽11係構成為得以使用作為處理液2向被洗淨構件1噴射之前使複數個被洗淨構件1充分浸漬於處理液2的處理槽11。但，並非限定於此，也可在有別於處理槽11的另外處理槽中使複數個被洗淨構件1充分浸漬於處理液2。 In the present embodiment, the processing tank 11 is configured so that a plurality of the cleaning members 1 are sufficiently immersed in the processing tank 2 before being used as the processing liquid 2 to be sprayed onto the cleaning member 1. However, the present invention is not limited to this, and the plurality of cleaned members 1 may be sufficiently immersed in the treatment liquid 2 in another treatment tank different from the treatment tank 11.
處理槽11的上方係呈敞開狀態，收容有被洗淨構件1的收容匣15則從該敞開部位投入處理槽內。投入的收容匣15係如圖3所示地載置於設在處理槽內的匣座構件14上。匣座構件14通常係以和處理槽11同樣的不銹鋼等形成，其 表面通常設有如冲孔金屬板之類的孔洞。但也不限定於此。 The upper part of the processing tank 11 is in an open state, and the storage box 15 containing the member to be cleaned 1 is put into the processing tank from the open portion. The inserted storage box 15 is placed on a box base member 14 provided in the processing tank as shown in FIG. 3. The cassette holder member 14 is usually formed of the same stainless steel as the processing tank 11. The surface is usually provided with holes such as punched metal plates. But it is not limited to this.
處理槽11的形狀或材質雖無特別限定，但一般以選擇不銹鋼等耐藥品性材料為佳。例如用掀離法進行半導體基板51的圖案化時，以考量用於其處理之處理液的種類來選擇為宜。 Although the shape or material of the processing tank 11 is not particularly limited, it is generally preferable to select a chemical-resistant material such as stainless steel. For example, when patterning the semiconductor substrate 51 by the lift-off method, it is appropriate to select the type of the processing liquid to be used for the processing.
另外，符號14a為將收容匣15引導至既定位置的導匣裝置，符號16為用以保持收容匣15的匣保持構件。 In addition, reference numeral 14 a is a guide device for guiding the storage cassette 15 to a predetermined position, and reference numeral 16 is a cassette holding member for holding the storage cassette 15.
(浸漬步驟) (Immersion step)
本實施形態的洗淨方法中，繼被洗淨構件配置步驟之後，接著執行浸漬步驟。 In the cleaning method of this embodiment, after the step of arranging the members to be cleaned, the immersion step is performed.
洗淨裝置10由具有被洗淨構件用往復動作手段17所構成，而該往復動作手段17係構成為得以執行：複數個被洗淨構件1向處理槽11中既定位置的配置；及複數個被洗淨構件1的水平方向往復動作及鉛直方向往復動作之至少任一者的周期性往復動作。本實施形態中，如圖8所示，係構成為使作為收容手段之一構成要素且可保持收容匣15的匣保持構件16進行往復動作，並使複數個被洗淨構件1進行水平方向往復動作及鉛直方向往復動作的至少任一者的周期性往復動作，但不限於此，也可採取匣保持構件16不動，而收容匣15則往復動作的構成。 The cleaning device 10 includes a reciprocating motion means 17 for a member to be cleaned, and the reciprocating motion means 17 is configured to be implemented: a plurality of the members to be cleaned 1 are arranged in a predetermined position in the processing tank 11; and a plurality of A periodic reciprocating motion of at least one of the horizontal reciprocating motion and the vertical reciprocating motion of the member 1 to be cleaned. In this embodiment, as shown in FIG. 8, it is configured to reciprocate the cassette holding member 16 which is a constituent element of the storage means and can hold the storage cassette 15, and to reciprocate the plurality of cleaned members 1 horizontally. The periodic reciprocating motion of at least one of the motion and the vertical reciprocating motion, but is not limited to this. A configuration may also be adopted in which the cassette holding member 16 is not moved and the storage cassette 15 is reciprocated.
此外，洗淨裝置10係在處理槽11的下部配設有會成為超音波照射手段的超音波洗淨裝置35。超音波洗淨裝置35可依照被洗淨構件1的洗淨處理樣態任意動作。特別是，和後述的處理液脫氣裝置91並用時，效果甚大。而且，應用於掀離法時，超音波洗淨裝置35也可作為促進阻劑部52 之膨潤的手段而動作。另外，超音波洗淨裝置35係屬於強力的洗淨輔助手段，很適用於半導體基板51上的阻劑部52和金屬薄膜53的剝離，可將金屬薄膜53破壞得很微細。因此，想要以儘量大片的狀態剝除金屬薄膜53時，可不使超音波洗淨裝置35動作。 In addition, the cleaning device 10 is provided with an ultrasonic cleaning device 35 which is an ultrasonic irradiation means at the lower portion of the processing tank 11. The ultrasonic cleaning device 35 can be arbitrarily operated in accordance with the cleaning processing state of the member 1 to be cleaned. In particular, when used in combination with a treatment liquid deaerator 91 described later, the effect is very great. In addition, when applied to the lift-off method, the ultrasonic cleaning device 35 can also be used as the resist promoting portion 52. By means of swelling. In addition, the ultrasonic cleaning device 35 is a powerful cleaning assisting method, and is very suitable for peeling off the resist portion 52 and the metal thin film 53 on the semiconductor substrate 51, and the metal thin film 53 can be broken very finely. Therefore, when it is desired to peel off the metal thin film 53 as large as possible, the ultrasonic cleaning device 35 may not be operated.
浸漬步驟中，在噴射處理液2之前，要使複數個被洗淨構件1充分浸漬於處理液2。再者，本實施形態洗淨方法的浸漬步驟中，係藉控制手段控制往復動作手段17與超音波照射手段35，俾可在複數個被洗淨構件的水平方向往復動作及鉛直方向往復動作的至少任一種往復動作正進行中的狀態下，向複數個被洗淨構件照射超音波。 In the immersion step, the plurality of cleaned members 1 are sufficiently immersed in the treatment liquid 2 before the treatment liquid 2 is sprayed. Furthermore, in the immersion step of the cleaning method of this embodiment, the reciprocating operation means 17 and the ultrasonic irradiation means 35 are controlled by the control means, so that the reciprocating action in the horizontal direction and the reciprocating action in the vertical direction of the plurality of cleaned members While at least one of the reciprocating actions is in progress, ultrasonic waves are irradiated to the plurality of cleaned members.
若依此種浸漬步驟，透過對沉入處理液中的被洗淨構件1照射超音波，可謀求洗淨效果的提升。此外，應用於掀離法時，可藉超音波照射促進阻劑部的膨潤，並且透過在該複數個被洗淨構件的水平方向往復動作及鉛直方向往復動作的至少任一種往復動作正進行中的狀態下，進行超音波向複數個被洗淨構件的照射，即可利用因超音波照射而產生於液中的定駐波(standing wave)的影響來抑制膨潤效果的偏頗(不均勻)，而不會對被洗淨構件造成損害，且可在整個阻劑部產生更良好且均勻的膨潤效果。結果，由設於半導體基板51上的阻劑部52及設於該阻劑部52上的金屬薄膜53構成的被洗淨物54可以很容易剝離，浮遊物不會再附著於半導體基板51，半導體基板51的圖案化可以高度處理效率進行。 According to such an immersion step, an ultrasonic wave is irradiated to the member 1 to be cleaned that has been sunk in the treatment liquid, thereby improving the cleaning effect. In addition, when applied to the lift-off method, the swelling of the resist portion can be promoted by ultrasonic irradiation, and at least one of the reciprocating action in the horizontal direction and the vertical reciprocating action of the plurality of cleaned members is being performed. In the state of ultrasound, the ultrasonic wave is irradiated to the plurality of cleaned members, and the influence of the standing wave generated in the liquid due to the ultrasonic irradiation can be used to suppress the bias (unevenness) of the swelling effect. Without damaging the cleaned member, a better and uniform swelling effect can be produced throughout the resist portion. As a result, the object to be cleaned 54 composed of the resist portion 52 provided on the semiconductor substrate 51 and the metal thin film 53 provided on the resist portion 52 can be easily peeled off, and the floating objects will not adhere to the semiconductor substrate 51 any more. The patterning of the semiconductor substrate 51 can be performed with high processing efficiency.
(處理液噴射口配置步驟) (Process liquid injection port configuration steps)
本實施形態的洗淨方法中，繼浸漬步驟之後接著實施處理液噴射口配置步驟，該步驟係使處理液噴射手段21從上方降下，並安置於被洗淨構件1的上方附近。 In the cleaning method according to this embodiment, a treatment liquid ejection port arrangement step is performed after the dipping step. This step lowers the treatment liquid ejection means 21 from above and places it near the upper part of the member 1 to be cleaned.
洗淨裝置10係構成為具有向複數個被洗淨構件1噴射處理液的處理液噴射手段21，該處理液噴射手段21係配置於處理槽11的上部12，並具有向複數個被洗淨構件1噴射處理液的處理液噴射口，且以可動方式配設於處理槽11。 The cleaning device 10 is configured to include a processing liquid spraying means 21 that sprays a processing liquid onto a plurality of cleaned members 1. The processing liquid spraying means 21 is disposed on an upper portion 12 of the processing tank 11 and has a plurality of washed parts. The component 1 sprays a processing liquid spray port of the processing liquid, and is disposed in the processing tank 11 in a movable manner.
處理液噴射手段21較佳為如圖1等所示地向複數個被洗淨構件1均等配置的複數個噴淋噴嘴(shower nozzle)。噴淋噴嘴可使用直線型噴嘴、扁錐型噴嘴(flat cone nozzle)、全錐形噴嘴(full cone nozzle)等，且可從這些噴淋噴嘴中選擇使用形狀較理想的噴淋噴嘴。在圖7所示的掀離法所利用的處理基板中，欲將由金屬薄膜53與阻劑部52構成的被洗淨物54以儘量大片的狀態剝除時，較佳為使用全錐形噴嘴。 The treatment liquid spraying means 21 is preferably a plurality of shower nozzles which are uniformly arranged to the plurality of cleaning members 1 as shown in FIG. 1 and the like. As the spray nozzle, a linear nozzle, a flat cone nozzle, a full cone nozzle, or the like can be used, and a spray nozzle with an ideal shape can be selected from these spray nozzles. In the processing substrate used in the lift-off method shown in FIG. 7, when the object to be cleaned 54 composed of the metal thin film 53 and the resist portion 52 is to be removed as large as possible, it is preferable to use a full cone nozzle .
處理液噴射手段21係如圖1至圖4所示地在被洗淨構件1的上方配置有複數個。例如被洗淨構件1為收容在收容匣15的半導體基板1時，係朝半導體基板1的徑向(也可稱為基板面方向)配置複數個(圖示例中為4個)，收容匣15的縱長方向(也可稱為半導體基板1的排列方向)也配置有複數個(圖示例中為8個)。噴淋噴嘴的數量及其配置較佳為按照欲洗淨的被洗淨構件1的大小或收容匣15內的被洗淨構件1的配置等任意設定。 As shown in FIGS. 1 to 4, a plurality of treatment liquid spraying means 21 are disposed above the cleaning member 1. For example, when the to-be-cleaned member 1 is the semiconductor substrate 1 stored in the storage box 15, a plurality of the storage member 1 are arranged in the radial direction (also referred to as the substrate surface direction) of the semiconductor substrate 1 (four in the example of the figure). A plurality of 15 (also referred to as an arrangement direction of the semiconductor substrate 1) are also arranged in the longitudinal direction of 15 (eight in the illustrated example). The number of shower nozzles and the arrangement thereof are preferably arbitrarily set according to the size of the member to be cleaned 1 to be cleaned, the arrangement of the member 1 to be cleaned in the storage box 15, and the like.
圖示例中，處理液噴射手段(噴淋配管)21係在噴嘴配管22上以等間隔並列安裝有8個。而且，安裝有噴淋 噴嘴21的噴嘴配管22係朝半導體基板1的徑向等間隔配置有4列。4列噴嘴配管22則用保持構件23保持成一體，且安裝在處理液噴射手段用往復動作手段27。 In the example shown in the figure, eight processing liquid spraying means (spraying piping) 21 are installed in parallel to the nozzle piping 22 at equal intervals. Furthermore, a spray is installed The nozzle pipes 22 of the nozzles 21 are arranged in four rows at equal intervals in the radial direction of the semiconductor substrate 1. The four-row nozzle piping 22 is integrally held by the holding member 23 and is mounted on the reciprocating operation means 27 for the processing liquid spraying means.
再者，處理液噴射手段用往復動作手段27係構成為得以執行處理液噴射口向被洗淨構件1之預定位置的配置、及處理液噴射手段21之處理液噴射口的水平方向往復動作及鉛直方向往復動作的至少任一種周期性往復動作。 In addition, the reciprocating action means 27 for the processing liquid ejecting means is configured to perform the arrangement of the processing liquid ejecting port to a predetermined position of the member 1 to be cleaned, and the horizontal reciprocating operation of the processing liquid ejecting port of the processing liquid ejecting means 21 and At least one of the vertical reciprocating motions is a periodic reciprocating motion.
處理液噴射手段21的噴射量可按每支噴淋配管22任意控制。這種控制可藉各噴淋配管之閥裝置的開閉來調整。結果，圖示例中，4列噴淋配管中可任意增多或減少。例如圖3所示，4列噴淋配管中，可使兩側的2列噴淋配管的流量增多以加大噴淋噴嘴21a、21d的噴射量，或減少流量以減小噴淋噴嘴21a、21d的噴射量。處理液噴射的控制可為自動控制，也可為手動控制。處理液的噴射時間可任意設定，例如，可為1、2秒，也可為5、6秒，亦可為10秒以上。 The spraying amount of the processing liquid spraying means 21 can be arbitrarily controlled for each spray pipe 22. This control can be adjusted by opening and closing the valve device of each spray pipe. As a result, in the example shown in the figure, the number of four-row spray pipes can be increased or decreased arbitrarily. For example, as shown in FIG. 3, in the four-row spray piping, the flow rate of the two-row spray piping on both sides can be increased to increase the spray amount of the spray nozzles 21a, 21d, or the flow rate can be reduced to reduce the spray nozzle 21a, 21d injection volume. The control of the treatment liquid injection can be automatic or manual. The spraying time of the processing liquid can be arbitrarily set, for example, it can be 1, 2 seconds, 5 or 6 seconds, or 10 seconds or more.
(洗淨步驟) (Washing step)
本實施形態的洗淨方法中，繼處理液噴射口配置步驟之後，接著執行去除形成在複數個被洗淨構件之被洗淨物的洗淨步驟。 In the cleaning method of this embodiment, following the step of disposing the treatment liquid ejection port, the cleaning step of removing the objects to be cleaned formed on the plurality of objects to be cleaned is performed.
洗淨裝置10係構成為具有處理液噴射手段21、被洗淨構件用往復動作手段17、及處理液噴射手段用往復動作手段27，並且再具有：處理液排出手段31，配置於處理槽11的下部，以排出該處理槽內的處理液；及控制手段，用以控制這些各個手段。 The cleaning device 10 includes a processing liquid spraying means 21, a reciprocating motion means 17 for a member to be cleaned, and a reciprocating motion means 27 for a processing liquid spraying means, and further includes a processing liquid discharge means 31 disposed in the processing tank 11. And a control means for controlling each of these means.
如圖1等所示，處理液排出手段31可為設於處理 槽11下方的排出口。通常，處理槽11下方的側壁係斜向傾斜，其最下端則設置排出口31。另外，收容被洗淨構件1的收容匣15係在其下方開設有處理液通過口29。從噴淋噴嘴噴射的處理液2在將被洗淨部材1洗淨之後，就從該處理液通過口29流到下方。通過處理液通過口29的處理液2則從處理槽11的排出口31排出。 As shown in FIG. 1 and the like, the processing liquid discharge means 31 may be provided in the processing A discharge port under the groove 11. Generally, the side wall below the processing tank 11 is inclined obliquely, and the lower end thereof is provided with a discharge port 31. In addition, the storage box 15 for storing the member 1 to be cleaned is provided with a processing liquid passage opening 29 below. After the processing liquid 2 sprayed from the shower nozzle cleans the material 1 to be cleaned, the processing liquid 2 flows from the processing liquid through the port 29 to the lower side. The processing liquid 2 passing through the processing liquid passage port 29 is discharged from the discharge port 31 of the processing tank 11.
排出口31的大小或形狀可依噴射量等或排出速度而任意設定。經排出的處理液2係如圖1所示地流入循環槽81。流入循環槽81的處理液2中所包含的被洗淨物54可依需要用回收網41加以捕集。洗淨處理結束後的處理液2可經由循環泵82、過濾器83、84、85、及熱交換器86進行循環，包含於處理液2的細小被洗淨物54則用過濾器去除，並利用於下一回的洗淨處理。 The size or shape of the discharge port 31 can be arbitrarily set depending on the injection amount and the like or the discharge speed. The discharged treatment liquid 2 flows into the circulation tank 81 as shown in FIG. 1. The objects to be cleaned 54 contained in the processing liquid 2 flowing into the circulation tank 81 can be collected by a recovery net 41 as needed. The treatment liquid 2 after the washing process can be circulated through the circulation pump 82, the filters 83, 84, 85, and the heat exchanger 86, and the small objects 54 included in the treatment liquid 2 are removed by a filter, and It is used in the next washing process.
控制手段係構成為：對處理液噴射手段21、被洗淨構件用往復動作手段17、處理液噴射手段用往復動作手段27、及處理液排出手段31進行控制，俾在複數個被洗淨構件1及處理液噴射口保持沉入於處理液的狀態下，而且，在對於複數個被洗淨構件與處理液噴射口彼此的相對式水平方向往復動作及鉛直方向往復動作的至少任一種往復動作正進行中的狀態下，藉由從處理液噴射口噴射處理液，將形成在複數個被洗淨構件的被洗淨物去除，並使該去除的被洗淨物和沉入有複數個被洗淨構件的處理液及自處理液噴射口噴出的處理液一起排出。 The control means is configured to control the treatment liquid spraying means 21, the reciprocating action means 17 for the cleaned member, the reciprocating action means 27 for the treatment liquid ejection means, and the treatment liquid discharge means 31, and control the plurality of cleaned members 1 and the treatment liquid ejection port are kept in the state of being immersed in the treatment liquid, and at least one of the reciprocating movements of the horizontal reciprocating action and the vertical reciprocating action relative to each other between the plurality of cleaned members and the treatment liquid ejecting port In the state in progress, by spraying the processing liquid from the processing liquid ejection port, the objects to be cleaned formed in the plurality of objects to be cleaned are removed, and the removed objects to be cleaned and the plurality of objects are sunk. The processing liquid of the cleaning member is discharged together with the processing liquid sprayed from the processing liquid ejection port.
再者，本實施形態的控制手段係構成為可逐漸增加處理液噴射手段21的處理液噴射量，並且可逐漸增加處 理液排出手段31的處理液排出量。若依這種噴射量與排出量的控制，即可一邊使複數個被洗淨構件1保持沉入處理液2中的狀態，一邊逐漸增加噴射量並且逐漸增加排出量，所以可藉處理液噴射手段21噴射處理液，使被洗淨構件1的洗淨不致急劇進行，而是緩緩地進行。這種控制在洗淨的初期階段特別理想。結果，以掀離法處理半導體基板1時，由金屬薄膜53及阻劑部52構成的被洗淨物54可以儘量大片的狀態剝除。 In addition, the control means of this embodiment is configured to gradually increase the processing liquid spraying amount of the processing liquid spraying means 21, and to gradually increase the number of locations. The amount of processing liquid discharged by the physical liquid discharge means 31. According to the control of the ejection amount and the ejection amount, while the plurality of cleaned members 1 are kept sinking in the treatment liquid 2, the ejection amount is gradually increased and the ejection amount is gradually increased. The means 21 sprays the treatment liquid so that the cleaning of the member 1 to be cleaned is not performed rapidly, but is performed slowly. This control is particularly desirable in the early stages of washing. As a result, when the semiconductor substrate 1 is processed by the lift-off method, the object to be cleaned 54 composed of the metal thin film 53 and the resist portion 52 can be peeled off as large as possible.
本實施形態的洗淨步驟中，係藉由一邊使複數個被洗淨構件1及處理液噴射手段21的處理液噴射口保持沉入處理液中的狀態，一邊從處理液噴射口向複數個被洗淨構件噴射處理液，同時將沉入有複數個被洗淨構件的處理液及從處理液噴射口噴出的處理液進行排出，而將形成在複數個被洗淨構件的被洗淨物去除並洗淨。 In the cleaning step of the present embodiment, the plurality of members to be cleaned 1 and the treatment liquid ejection ports of the treatment liquid ejection means 21 are maintained in a state of being sank into the treatment liquid while the treatment liquid ejection ports are directed toward the plurality of The cleaned member sprays the processing liquid, and simultaneously discharges the processing liquid in which the plurality of cleaned members are sunk and the processing liquid ejected from the processing liquid ejection port to discharge the cleaned matter formed on the plurality of cleaned members. Remove and wash.
而且，本發明的洗淨步驟中，具有使處理液中對於複數個被洗淨構件與處理液噴射手段之處理液噴射口彼此的相對式水平方向往復動作及鉛直方向往復動作的至少任一種往復動作周期性地進行的往復動作步驟，使處理液向複數個被洗淨構件噴射的動作得以在該相對式水平方向往復動作及鉛直方向往復動作的至少任一種往復動作正進行中的狀態下進行。 Furthermore, the cleaning step of the present invention includes at least one of a reciprocating horizontal reciprocating operation and a reciprocating vertical reciprocating operation of the processing liquid with respect to the plurality of cleaning members and the processing liquid spraying ports of the processing liquid spraying means. The reciprocating motion step that is performed periodically allows the processing liquid to be sprayed on the plurality of cleaned members while at least one of the relative horizontal reciprocating motion and the vertical reciprocating motion is in progress. .
若依此種洗淨步驟，係一邊使複數個被洗淨構件及處理液噴射口保持沉入處理液中的狀態一邊執行處理液噴射及處理液排出，而且，可將已去除的被洗淨物連同沉入有複數個被洗淨構件的處理液與自處理液噴射口噴出的 處理液一起排出，從而，浮遊於液中的已去除的被洗淨物再附著於被洗淨構件的情形可獲得抑制，被洗淨構件可以更優異的方式洗淨。 According to such a washing step, the processing liquid is sprayed and the processing liquid is discharged while the plurality of cleaned members and the processing liquid ejection ports are kept in the processing liquid, and the removed to be washed can be cleaned. And the processing liquid which has been sunk into the plurality of cleaned members and sprayed from the processing liquid spray port. The treatment liquid is discharged together, so that the removed washed-outs floating in the liquid can be prevented from adhering to the washed member again, and the washed member can be washed in a more excellent manner.
再者，若依此種洗淨步驟，係藉由在處理液中對於複數個被洗淨構件及處理液噴射口彼此的相對式水平方向往復動作及鉛直方向往復動作之至少任一種往復動作正進行中的狀態下，進行處理液向複數個被洗淨構件的噴射，故可將更平均且強力(高壓)的處理液的液中噴流向複數個被洗淨構件噴射，故不論被洗淨構件的構成材料或形成在該被洗淨構件上的被洗淨物的形態為何，均可更優異地將被洗淨物依照期望去除。 In addition, according to such a washing step, at least one of the reciprocating actions of the horizontal reciprocating action and the vertical reciprocating action of the plurality of members to be cleaned and the ejection openings of the treating liquid in the processing liquid is positive. In the ongoing state, the processing liquid is sprayed to the plurality of cleaned members, so the liquid of the processing liquid that is more even and strong (high pressure) can be sprayed to the plurality of cleaned members, so regardless of the cleaning What is the configuration material of the member or the form of the object to be cleaned formed on the member to be cleaned can both remove the object to be cleaned as desired.
處理液排出的控制可為自動控制也可為手動控制。本實施形態中，如圖6(b)所示，係一邊保持複數個被洗淨構件1沉入於處理液2的狀態一邊進行處理液噴射及處理液排出，故處理液排出時的處理液2之排出量及上述處理液噴射時的處理液2之導入量係設定在可保持浸漬狀態的範圍內，其量可控制成相同量或大致相同量。排出量與導入量相同或大致相同時，處理液排出的時間係對應上述處理液噴射時間而任意設定。例如，處理液噴射為1、2秒時，一邊保持被洗淨構件1沉入處理液2的狀態一邊進行處理液排出的時間也同樣是1、2秒，處理液噴射為5、6秒時，一邊保持被洗淨構件1沉入處理液2的狀態一邊進行處理液排出的時間也同樣為5、6秒。 The control of the process liquid discharge may be automatic or manual. In this embodiment, as shown in FIG. 6 (b), the processing liquid is ejected and the processing liquid is discharged while the plurality of cleaned members 1 are sunk in the processing liquid 2. Therefore, the processing liquid when the processing liquid is discharged The discharge amount of 2 and the introduction amount of the treatment liquid 2 when the treatment liquid is sprayed are set within a range capable of maintaining the immersion state, and the amount can be controlled to be the same amount or approximately the same amount. When the discharge amount and the introduction amount are the same or approximately the same, the time for which the processing liquid is discharged is arbitrarily set in accordance with the processing liquid ejection time. For example, when the treatment liquid is sprayed for 1 or 2 seconds, the time for discharging the treatment liquid while maintaining the state where the cleaned member 1 sinks into the processing liquid 2 is also 1, 2 seconds, and when the treatment liquid is sprayed for 5 or 6 seconds The time for discharging the treatment liquid while maintaining the state in which the member 1 to be cleaned sinks into the treatment liquid 2 is also 5 or 6 seconds.
處理液的排出中，如圖6(b)所示，處理液噴射時的導入量和處理液排出時的排出量設為相同或大致相同 並實施處理後，如圖6(c)所示，使處理液排出的排出量多於處理液噴射的導入量，以降低處理液2的水位。藉由這種處理，在處理液2的水位下降的途中，假設存在有浮遊在處理液2中的被洗淨物54時，即使被洗淨物54附著於被洗淨構件1，附著的被洗淨物54也可用噴射自噴淋噴嘴21的處理液2沖洗。最後，如圖6(d)所示，將噴淋噴嘴21拉到上方，然後，將收容匣15上拉。 During the discharge of the processing liquid, as shown in FIG. 6 (b), the amount of the liquid to be introduced during the spraying of the processing liquid and the amount of the liquid to be discharged during the discharging of the processing liquid are set to be the same or approximately the same. After the treatment is performed, as shown in FIG. 6 (c), the discharge amount of the treatment liquid is discharged more than the introduction amount of the treatment liquid ejection to reduce the water level of the treatment liquid 2. With this processing, when the washed object 54 floating in the treated liquid 2 is present on the way of the water level of the treated liquid 2 falling, even if the washed object 54 is attached to the washed member 1, The cleaning material 54 may be rinsed with the treatment liquid 2 sprayed from the shower nozzle 21. Finally, as shown in FIG. 6 (d), the shower nozzle 21 is pulled upward, and then the storage box 15 is pulled up.
處理液2的水位下降的途中，可只從噴射噴嘴噴出處理液2，也可將處理液2和氣體(空氣或氮氣等)混合並同時噴射。而且，處理液2排出途中的水位，即使在較被洗淨構件1(例如半導體基板)為低時，也可只從噴射噴嘴噴出處理液2，也可將處理液2和氣體(空氣或氮氣等)混合並同時噴射，但也可只噴射氣體。只噴射氣體時，可將被洗淨構件1的液體施行瀝除。 While the water level of the processing liquid 2 is falling, the processing liquid 2 may be ejected from only the spray nozzle, or the processing liquid 2 may be mixed with a gas (air, nitrogen, etc.) and sprayed simultaneously. In addition, even when the water level during the discharge of the treatment liquid 2 is lower than that of the member 1 (for example, a semiconductor substrate) to be cleaned, the treatment liquid 2 can be ejected only from the injection nozzle, and the treatment liquid 2 and a gas (air or nitrogen) can be discharged. Etc.) Mix and spray simultaneously, but only gas may be sprayed. When only the gas is sprayed, the liquid of the cleaning member 1 can be drained.
(回收步驟) (Recycling step)
另外，回收被洗淨物54時，回收步驟可和洗淨步驟合併進行。本實施形態的洗淨裝置10中，進一步配設用以將因洗淨被洗淨構件1而產生的被洗淨物54予以回收的回收手段。該回收手段可按照該被洗淨物54的種類或大小並依需要設置。被洗淨物54為藉上述掀離法去除的由金屬薄膜53及阻劑部52構成的被洗淨物54時，回收手段較佳為設置有回收網41(參照圖1)。這種回收網41可使用不銹鋼製網材，其網孔(篩孔)可按照所去除的金屬薄膜53的大小來選擇。 When the object to be cleaned 54 is recovered, the recovery step may be performed in combination with the cleaning step. The cleaning device 10 according to this embodiment further includes a recovery means for recovering the objects to be cleaned 54 generated by cleaning the object 1 to be cleaned. The recovery means can be set according to the type or size of the object to be cleaned 54 as needed. When the object to be cleaned 54 is the object to be cleaned 54 composed of the metal thin film 53 and the resist portion 52 removed by the above-mentioned lift-off method, the recovery means is preferably provided with a recovery net 41 (see FIG. 1). This recycling net 41 can be made of stainless steel, and its mesh (sieve) can be selected according to the size of the metal film 53 to be removed.
藉由設置這種回收手段，被洗淨構件1為例如形成有阻劑部52與金屬薄膜53的半導體基板51時，可將和阻劑 部52一起剝離的金屬薄膜53當作被洗淨物54有效率地回收。結果，所回收的金屬薄膜53可作為資源再加以利用。 By providing such a recovery means, for example, when the member to be cleaned 1 is a semiconductor substrate 51 having a resist portion 52 and a metal thin film 53 formed thereon, the resist can be combined with the resist. The metal thin film 53 that has been peeled off by the portion 52 is efficiently recovered as the object to be cleaned 54. As a result, the recovered metal thin film 53 can be reused as a resource.
再者，本實施形態中，亦構成為：處理槽11附設有溢流槽18，俾可收容自處理槽11不經意溢出的處理液，並且，藉由使處理液從處理槽11的下側進行循環，使處理液的液面上升，令浮遊在處理液液面附近的金屬淤渣等浮遊物向溢流槽18內流入，即得以防止該浮遊物再附著於被洗淨構件。 In addition, in the present embodiment, the processing tank 11 is also provided with an overflow tank 18, so that the processing liquid that has inadvertently overflowed from the processing tank 11 can be stored, and the processing liquid is carried out from the lower side of the processing tank 11 The circulation raises the liquid level of the processing liquid, and allows floating matters such as metal sludge floating near the liquid level of the processing liquid to flow into the overflow tank 18, thereby preventing the floating matter from adhering to the cleaned member again.
(其他) (other)
處理液2係依照洗淨目的或被洗淨構件1的種類而作任意選擇，可為有機溶劑等有機系處理液，也可為無機系處理液。這種處理液2通常係藉由任意操作圖1中所示的閥裝置，而循環使用於圖1所示的路徑內。處理液2的循環、對處理槽11的供給、及對噴淋噴嘴21的供給可用各種方法執行。 The treatment liquid 2 is arbitrarily selected according to the purpose of cleaning or the type of the member 1 to be cleaned, and may be an organic treatment liquid such as an organic solvent, or an inorganic treatment liquid. Such a treatment liquid 2 is generally circulated in the path shown in FIG. 1 by operating the valve device shown in FIG. 1 arbitrarily. The circulation of the processing liquid 2, the supply to the processing tank 11, and the supply to the shower nozzle 21 can be performed by various methods.
例如，處理液浸漬的階段中，處理液2可以泵循環供給至處理槽11。另一方面，處理液噴射的階段中，填充入處理液鋼瓶71內的處理液2較佳為用氣體(空氣、氮氣等)加壓(通常為0.2MPa至0.6MPa左右)，並以高壓狀態從處理液鋼瓶71一口氣送出，再從噴淋噴嘴21前端的處理液噴射口排出。自處理液鋼瓶71送出的處理液2因係以高壓力實施噴淋，故連薄膜都能瞬時剝除。 For example, in the stage where the treatment liquid is immersed, the treatment liquid 2 may be circulated and supplied to the treatment tank 11 by a pump. On the other hand, in the stage of spraying the processing liquid, the processing liquid 2 filled in the processing liquid steel cylinder 71 is preferably pressurized with a gas (air, nitrogen, etc.) (usually about 0.2 MPa to about 0.6 MPa) and under a high pressure state. It is sent out from the processing liquid steel cylinder 71 in one breath, and then discharged from the processing liquid spray port at the front end of the spray nozzle 21. Since the treatment liquid 2 sent from the treatment liquid steel cylinder 71 is sprayed at a high pressure, even the film can be peeled off instantly.
此外，處理液2也可藉處理液脫氣裝置91加以處理。以處理液脫氣裝置91施以脫氣處理的處理液2較容易滲透到例如微細圖案的間隙內。結果，可使用處理液2進行有效的洗淨。特別是使用超音波洗淨裝置35的情況時很理想， 洗淨效率可獲得提升。使用經脫氣處理的處理液2的應用例中，可增加超音波的洗淨效果，並可縮短處理時間，而且可藉超音波洗淨的效應遍及各角落而使良品率提升，相較於未經處理的處理液，處理溫度得以降低。 In addition, the processing liquid 2 may be processed by the processing liquid degassing device 91. The treatment liquid 2 subjected to the degassing treatment by the treatment liquid degassing device 91 easily penetrates into, for example, a gap of a fine pattern. As a result, the treatment liquid 2 can be used for effective washing. This is particularly desirable when the ultrasonic cleaning device 35 is used, Washing efficiency can be improved. In the application example using the deaerated treatment liquid 2, the ultrasonic cleaning effect can be increased, and the processing time can be shortened. Moreover, the ultrasonic cleaning effect can be spread to all corners to improve the yield. The untreated treatment liquid reduces the treatment temperature.
1‧‧‧被洗淨構件(半導體基板) 1‧‧‧ cleaned member (semiconductor substrate)
10‧‧‧洗淨裝置 10‧‧‧washing device
11‧‧‧處理槽 11‧‧‧Treatment tank
12‧‧‧處理槽上部 12‧‧‧ upper part of treatment tank
14‧‧‧匣座構件 14‧‧‧ Casing Block
15‧‧‧收容手段(收容匣) 15‧‧‧ Containment Means (Container Box)
16‧‧‧匣保持構件 16‧‧‧ cassette holding member
17‧‧‧往復動作手段(被洗淨構件用) 17‧‧‧Reciprocating action means (for cleaned components)
18‧‧‧溢流槽 18‧‧‧ overflow tank
21‧‧‧處理液噴射手段(噴嘴) 21‧‧‧ treatment liquid spraying means (nozzle)
22‧‧‧噴淋配管 22‧‧‧Spraying Piping
23‧‧‧保持構件 23‧‧‧ holding member
27‧‧‧往復動作手段(處理液噴射手段用) 27‧‧‧Reciprocating action means (for treatment liquid ejection means)
29‧‧‧處理液通過口 29‧‧‧ treatment liquid through the mouth
31‧‧‧處理液排出手段(排出口) 31‧‧‧ treatment liquid discharge means (discharge port)
35‧‧‧超音波照射手段(超音波洗淨裝置) 35‧‧‧ Ultrasonic irradiation means (ultrasonic cleaning device)
41‧‧‧回收手段(回收網) 41‧‧‧Recycling means (recycling net)
54‧‧‧被洗淨物(無用物) 54‧‧‧ Washed (useless)
71‧‧‧處理液鋼瓶 71‧‧‧handling liquid steel cylinder
81‧‧‧循環槽 81‧‧‧Circulation tank
82‧‧‧循環泵 82‧‧‧Circulation pump
83、84、85‧‧‧過濾器 83, 84, 85‧‧‧ filters
86‧‧‧熱交換器 86‧‧‧Heat exchanger
91‧‧‧處理液脫氣裝置 91‧‧‧ treatment liquid degassing device
Claims (4)
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016-119268 | 2016-06-15 | ||
| JP2016119268A JP2017224734A (en) | 2016-06-15 | 2016-06-15 | Cleaning method and cleaning device |
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| Publication Number | Publication Date |
|---|---|
| TW201801170A true TW201801170A (en) | 2018-01-01 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW106119740A TW201801170A (en) | 2016-06-15 | 2017-06-14 | Cleaning method and cleaning device |
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| Country | Link |
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| JP (1) | JP2017224734A (en) |
| TW (1) | TW201801170A (en) |
| WO (1) | WO2017217468A1 (en) |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03295238A (en) * | 1990-04-12 | 1991-12-26 | Fujitsu Ltd | Treater for substrate |
| JP4934079B2 (en) * | 2008-02-28 | 2012-05-16 | 信越半導体株式会社 | Ultrasonic cleaning apparatus and ultrasonic cleaning method |
| JP6329342B2 (en) * | 2013-06-07 | 2018-05-23 | 株式会社ダルトン | Cleaning method and cleaning device |
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2016
- 2016-06-15 JP JP2016119268A patent/JP2017224734A/en active Pending
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| JP2017224734A (en) | 2017-12-21 |
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