JP2017206420A5 - - Google Patents
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- JP2017206420A5 JP2017206420A5 JP2016101103A JP2016101103A JP2017206420A5 JP 2017206420 A5 JP2017206420 A5 JP 2017206420A5 JP 2016101103 A JP2016101103 A JP 2016101103A JP 2016101103 A JP2016101103 A JP 2016101103A JP 2017206420 A5 JP2017206420 A5 JP 2017206420A5
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Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016101103A JP6631406B2 (ja) | 2016-05-20 | 2016-05-20 | シリコン単結晶の製造方法 |
| US15/595,196 US10490398B2 (en) | 2016-05-20 | 2017-05-15 | Manufacturing method of monocrystalline silicon and monocrystalline silicon |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016101103A JP6631406B2 (ja) | 2016-05-20 | 2016-05-20 | シリコン単結晶の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017206420A JP2017206420A (ja) | 2017-11-24 |
| JP2017206420A5 true JP2017206420A5 (ja) | 2018-07-12 |
| JP6631406B2 JP6631406B2 (ja) | 2020-01-15 |
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ID=60330315
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016101103A Active JP6631406B2 (ja) | 2016-05-20 | 2016-05-20 | シリコン単結晶の製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US10490398B2 (ja) |
| JP (1) | JP6631406B2 (ja) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6304424B1 (ja) | 2017-04-05 | 2018-04-04 | 株式会社Sumco | 熱遮蔽部材、単結晶引き上げ装置および単結晶シリコンインゴットの製造方法 |
| US11598023B2 (en) * | 2020-06-29 | 2023-03-07 | Sumco Corporation | Low resistivity wafer and method of manufacturing thereof |
| CN114561701B (zh) * | 2021-06-07 | 2022-08-19 | 浙江大学杭州国际科创中心 | 一种铸造法生长氧化镓单晶的方法及包含氧化镓单晶的半导体器件 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| PL139601B1 (en) * | 1983-08-30 | 1987-02-28 | Inst Tech Material Elekt | Method of obtaining cristals in particular those of semiconductor materials |
| JP4396505B2 (ja) * | 2004-12-14 | 2010-01-13 | 株式会社Ｓｕｍｃｏ | シリコン単結晶の製造方法 |
| DE112009001202T5 (de) * | 2008-05-20 | 2011-06-22 | Shin-Etsu Handotai Co., Ltd. | Einkristallherstellungsvorrichtung |
| JP5574645B2 (ja) * | 2009-09-07 | 2014-08-20 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | 単結晶シリコンの製造方法 |
| MY166030A (en) * | 2011-04-20 | 2018-05-21 | Gtat Ip Holding Llc | Side feed system for czochralski growth of silicon ingots |
| JP6167752B2 (ja) * | 2013-08-21 | 2017-07-26 | 信越半導体株式会社 | シリコン単結晶材料の製造方法 |
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2016
- 2016-05-20 JP JP2016101103A patent/JP6631406B2/ja active Active
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2017
- 2017-05-15 US US15/595,196 patent/US10490398B2/en active Active