JP2017163002A - Light-emitting device and illuminating device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a light-emitting device with an increased light extraction efficiency.SOLUTION: A light-emitting device 10 comprises: a substrate 11; a plurality of LED chips 12 disposed on the substrate 11; and a dam material 13 disposed on the substrate 11, and surrounding the plurality of LED chips 12 from lateral directions. The light-emitting device 10 further comprises: a wavelength-conversion material 14 disposed over the plurality of LED chips 12 and including a phosphor; and a sealing member 15 filling between at least the plurality of LED chips 12. In the sealing member 15, air bubbles 16 of μm order are dispersed.SELECTED DRAWING: Figure 4

Description

  The present invention relates to a light emitting device and a lighting device using the light emitting device.

  2. Description of the Related Art Conventionally, a COB (Chip On Board) type light emitting device (light emitting module) in which an LED (Light Emitting Diode) chip mounted on a substrate is sealed with a sealing member formed of a resin containing a phosphor is known. (For example, refer to Patent Document 1).

JP 2011-146640 A

  For example, a light-emitting device used as a light source such as a spotlight or a projector is required to be easy to control light distribution and to have a high luminous flux. In order to satisfy such a requirement, in order to emit bright light from a small light emitting region in the light emitting device, it is necessary to arrange a plurality of LED chips densely. When LED chips are densely arranged, the light extraction efficiency is lowered due to absorption of light emitted from the side of one LED chip by another LED chip.

  The present invention provides a light emitting device and a lighting device with improved light extraction efficiency.

  A light emitting device according to an aspect of the present invention includes a substrate, a plurality of light emitting elements disposed on the substrate, a dam material disposed on the substrate and surrounding the plurality of light emitting elements from a side, and the plurality of light emitting devices. A wavelength conversion material containing a phosphor and a sealing member that fills at least the space between the plurality of light emitting elements, and the sealing member includes bubbles in the order of μm. Are distributed.

  An illumination device according to one embodiment of the present invention includes the light-emitting device and a lighting device that supplies power to the light-emitting device to light the light-emitting device.

  ADVANTAGE OF THE INVENTION According to this invention, the light-emitting device and illuminating device with which the extraction efficiency of light was improved are implement | achieved.

FIG. 1 is an external perspective view of the light emitting device according to Embodiment 1. FIG. FIG. 2 is a plan view of the light emitting device according to the first embodiment. FIG. 3 is a plan view showing the internal structure of the light emitting device according to Embodiment 1. FIG. FIG. 4 is a schematic cross-sectional view of the light emitting device taken along line IV-IV in FIG. FIG. 5 is a diagram for explaining an effect obtained by including bubbles in the sealing member. FIG. 6 is a flowchart of the method for manufacturing the light emitting device according to the first embodiment. FIG. 7 is a schematic diagram for explaining a method for producing a translucent resin material containing bubbles. FIG. 8 is a schematic cross-sectional view of a light emitting device according to Modification 1. FIG. 9 is a schematic cross-sectional view of a light emitting device according to Modification 2. FIG. 10 is a schematic cross-sectional view of a light emitting device according to Modification 3. FIG. 11 is a cross-sectional view of the lighting apparatus according to Embodiment 2. FIG. 12 is an external perspective view of the illumination device and its peripheral members according to the second embodiment.

  Hereinafter, embodiments will be described with reference to the drawings. It should be noted that each of the embodiments described below shows a comprehensive or specific example. The numerical values, shapes, materials, constituent elements, arrangement positions and connecting forms of the constituent elements, steps, order of steps, and the like shown in the following embodiments are merely examples, and are not intended to limit the present invention. In addition, among the constituent elements in the following embodiments, constituent elements that are not described in the independent claims indicating the highest concept are described as optional constituent elements.

  Each figure is a schematic diagram and is not necessarily shown strictly. Moreover, in each figure, the same code | symbol is attached | subjected to the substantially same structure, and the overlapping description may be abbreviate | omitted or simplified. For example, in the modified example in the following embodiment, the description will be focused on differences from the embodiment described before the modified example.

  In the drawings used for explanation in the following embodiments, coordinate axes may be shown. The Z-axis direction in the coordinate axes is, for example, the vertical direction, the Z-axis + side is expressed as the upper side (upper), and the Z-axis-side is expressed as the lower side (lower). In other words, the Z-axis direction is a direction perpendicular to the substrate included in the light emitting device. The X-axis direction and the Y-axis direction are directions orthogonal to each other on a plane (horizontal plane) perpendicular to the Z-axis direction. The XY plane is a plane parallel to the main surface of the substrate included in the light emitting device. For example, in the following embodiments, the “planar shape” means a shape viewed from the Z-axis direction.

(Embodiment 1)
[Configuration of light emitting device]
First, the structure of the light-emitting device according to Embodiment 1 will be described with reference to the drawings. FIG. 1 is an external perspective view of the light emitting device according to Embodiment 1. FIG. FIG. 2 is a plan view of the light emitting device according to the first embodiment. FIG. 3 is a plan view showing the internal structure of the light emitting device according to Embodiment 1. FIG. 4 is a schematic cross-sectional view taken along line IV-IV in FIG. 3 is a plan view showing an internal structure such as the arrangement of the LED chips 12 with the wavelength conversion material 14 removed in FIG. 1 to 4, illustration of wiring patterns on the substrate 11 and bonding wires used for electrical connection of the LED chip 12 is omitted.

  As shown in FIGS. 1 to 4, the light-emitting device 10 according to Embodiment 1 includes a substrate 11, a plurality of LED chips 12, a dam material 13, a wavelength conversion material 14, and a sealing member 15. Prepare.

  The light emitting device 10 is an LED module having a so-called COB (Chip On Board) structure in which an LED chip 12 is directly mounted on a substrate 11. For example, the light emitting device 10 is used as a light source such as a spotlight or a projector, but may be used as a light source of other lighting devices. In the light emitting device 10, a plurality of LED chips 12 are densely mounted (closely arranged) in order to emit bright light from a small light emitting region. Thereby, the light-emitting device 10 with high luminous flux and easy light distribution control is realized.

  The board | substrate 11 is a board | substrate which has a wiring area | region in which wiring (not shown) was provided. The wiring is a metal wiring for supplying power to the LED chip 12. An electrode for electrically connecting the light emitting device 10 and an external device is provided on the substrate 11 as a part of the wiring. The substrate 11 is, for example, a metal base substrate or a ceramic substrate. The substrate 11 may be a resin substrate having a resin as a base material.

  As the ceramic substrate, an alumina substrate made of aluminum oxide (alumina), an aluminum nitride substrate made of aluminum nitride, or the like is employed. As the metal base substrate, for example, an aluminum alloy substrate, an iron alloy substrate, a copper alloy substrate, or the like having an insulating film formed on the surface is employed. As the resin substrate, for example, a glass epoxy substrate made of glass fiber and epoxy resin is employed.

  As the substrate 11, for example, a substrate having a high light reflectance (for example, a light reflectance of 90% or more) may be employed. By adopting a substrate having a high light reflectance as the substrate 11, the light emitted from the LED chip 12 can be reflected on the surface of the substrate 11. As a result, the light extraction efficiency of the light emitting device 10 is improved. An example of such a substrate is a white ceramic substrate based on alumina.

  Further, as the substrate 11, a translucent substrate having a high light transmittance may be adopted. Examples of such a substrate include a light-transmitting ceramic substrate made of polycrystalline alumina or aluminum nitride, a transparent glass substrate made of glass, a crystal substrate made of crystal, a sapphire substrate made of sapphire, or a transparent resin substrate made of a transparent resin material. Illustrated.

  In the first embodiment, the substrate 11 is rectangular, but may be other shapes such as a circle.

  The LED chip 12 is an example of a light emitting element, and is disposed (mounted) on the substrate 11. The LED chip 12 is a gallium nitride-based blue LED chip made of, for example, an InGaN-based material and having a center wavelength (emission spectrum peak wavelength) of 430 nm or more and 480 nm or less. That is, the LED chip 12 emits blue light.

  The shape of the LED chip 12 is, for example, a rectangle. Moreover, the mounting method of the LED chip 12 is not particularly limited. The LED chip 12 may be flip-chip mounted (face-down mounting) or face-up mounted. The plurality of LED chips 12 are arranged in a matrix, for example, but the arrangement of the plurality of LED chips 12 is not particularly limited.

  The plurality of LED chips 12 mounted on the substrate 11 are all electrically connected so that they can be turned on and off collectively. For electrical connection, wiring on the substrate 11 and bonding wires are used. For example, gold (Au), silver (Ag), copper (Cu), or the like is employed as the metal material for the wiring and the bonding wire. The bonding wire may not be used when the LED chip 12 is flip-chip mounted.

  In the first embodiment, the plurality of LED chips 12 are densely mounted. As shown in FIG. 3, the ratio of the total area of the region where the LED chip 12 is mounted to the area of the region surrounded by the dam material 13 in a plan view is 50% or more. Further, the arrangement interval W1 in the horizontal direction (X-axis direction) of the LED chip 12 is shorter than any of the width W2 in the longitudinal direction and the width W3 in the short direction of the LED chip 12. The arrangement interval W4 in the vertical direction (Y-axis direction) of the LED chip 12 is shorter than any of the width W2 in the longitudinal direction and the width W3 in the short direction of the LED chip 12. The width W2 in the longitudinal direction of the LED chip 12 is, for example, about 1 mm, and the width W3 in the short direction of the LED chip 12 is, for example, about 0.8 mm.

  Specifically, each of the arrangement interval W1 and the arrangement interval W4 of the LED chip 12 is, for example, about 0.1 mm, and is about 1/10 of the width W2 of the LED chip 12 in the longitudinal direction. In dense mounting, each of the arrangement interval W1 and the arrangement interval W4 of the LED chips 12 is, for example, one fifth or less of the longitudinal width W2 of the LED chips 12.

  The dam material 13 is disposed on the substrate 11. The dam material 13 is a member for retaining the sealing member 15. For the dam material 13, for example, an insulating thermosetting resin or thermoplastic resin is used. More specifically, the dam material 13 is made of silicone resin, phenol resin, epoxy resin, bismaleimide triazine resin, polyphthalamide (PPA) resin, or the like. The dam material 13 may be formed of a material other than resin. The dam material 13 may be formed of ceramic, for example.

The dam material 13 desirably has light reflectivity in order to increase the light extraction efficiency of the light emitting device 10. Therefore, in the first embodiment, a white resin (so-called white resin) is used for the dam material 13. In order to improve the light reflectivity of the dam material 13, the dam material 13 may include light reflective particles such as TiO ₂ , Al ₂ O ₃ , ZrO ₂ , and MgO.

  In the light emitting device 10, the dam material 13 is disposed on the substrate 11 so as to surround the plurality of LED chips 12. The plan view shape of the dam material 13 is a rectangular ring. A sealing member 15 is disposed in a region surrounded by the dam material 13. In addition, the shape of the dam material 13 is not specifically limited. For example, the dam material 13 may be formed in an annular shape.

  The wavelength conversion material 14 is a translucent resin material containing a phosphor disposed above the plurality of LED chips 12. The wavelength conversion material 14 is a region surrounded by the dam material 13 and covers a region where the sealing member 15 is disposed. Although the wavelength conversion material 14 is plate shape which makes the height direction of the LED chip 12 the thickness direction, the shape of the wavelength conversion material 14 is not specifically limited.

  In Embodiment 1, the sealing member 15 is disposed between the lower surface of the wavelength conversion material 14 and the upper surface of the LED chip 12, but between the lower surface of the wavelength conversion material 14 and the upper surface of the LED chip 12. There may be a gap (air layer). Further, the lower surface of the wavelength conversion material 14 and the upper surface of the LED chip 12 may be in contact with each other. The base material (translucent resin material) of the wavelength conversion material 14 is, for example, a methyl silicone resin, but may be an epoxy resin or a urea resin.

  The wavelength conversion material 14 includes, for example, a yellow phosphor. Specifically, the yellow phosphor is, for example, an yttrium-aluminum-garnet (YAG) phosphor having an emission peak wavelength of 550 nm to 570 nm.

  When the LED chip 12 emits blue light, a part of the emitted blue light is wavelength-converted to yellow light by the yellow phosphor included in the wavelength conversion material 14. The blue light that has not been absorbed by the yellow phosphor and the yellow light that has been wavelength-converted by the yellow phosphor are diffused and mixed in the wavelength conversion material 14. Thereby, white light is emitted from the light emitting device 10 (wavelength conversion material 14).

In addition, the fluorescent substance contained in the wavelength conversion material 14 is not specifically limited. The wavelength conversion material 14 may include a phosphor that is excited by light emitted from the LED chip 12. For example, the wavelength conversion material 14 may contain a green phosphor instead of the yellow phosphor or in addition to the yellow phosphor. The green phosphor is, for example, a Y ₃ (Al, Ga) ₅ O ₁₂ : Ce ³⁺ phosphor or a Lu ₃ Al ₅ O ₁₂ : Ce ³⁺ phosphor having an emission peak wavelength of 515 nm or more and 550 nm or less.

In addition to the yellow phosphor, the wavelength conversion material 14 may contain a red phosphor. Thereby, the color rendering property of the white light which the light-emitting device 10 emits can be improved. The red phosphor is, for example, a CaAlSiN ₃ : Eu ²⁺ phosphor or (Sr, Ca) AlSiN ₃ : Eu ²⁺ phosphor having an emission peak wavelength of 610 nm or more and 620 nm or less.

  The sealing member 15 is a translucent resin material that fills at least the space between the plurality of LED chips 12. In the first embodiment, the sealing member 15 has a function of collectively sealing the plurality of LED chips 12 and thereby protecting the plurality of LED chips 12 from dust, moisture, external force, and the like. In addition, the sealing member 15 has a function of reducing the influence on the wavelength conversion material 14 caused by heat generated by the plurality of LED chips 12 emitting light. The translucent resin material (base material of the sealing member 15) used as the sealing member 15 is, for example, a methyl silicone resin, but may be an epoxy resin or a urea resin. In addition, when the sealing member 15 is arrange | positioned between the lower surface of the wavelength conversion material 14 and the upper surface of the LED chip 12, as a base material of the sealing member 15, refractive index is higher than the base material of the wavelength conversion material 14. High materials should be used. Thereby, since the light emitted from the LED chip 12 is suppressed from being reflected at the interface between the wavelength conversion material 14 and the sealing member 15, the light extraction efficiency can be improved.

  The sealing member 15 does not include a phosphor, but may include it. However, in order to increase the amount of light incident on the wavelength conversion material 14, it is better not to include a phosphor. This is because the amount of light traveling from the LED chip 12 toward the wavelength conversion material 14 may decrease because the phosphor scatters light.

  In the sealing member 15, bubbles 16 of the order of μm (micrometer, micron) are dispersedly arranged. In other words, the microbubbles are uniformly contained in the sealing member 15. Such bubbles 16 are intentionally made. Thereby, the light emitting device 10 can increase the amount of light traveling toward the wavelength conversion material 14. That is, the light extraction efficiency can be increased. FIG. 5 is a diagram for explaining an effect obtained by including the bubbles 16 in the sealing member 15.

  The LED chip 12 emits light mainly upward. That is, the LED chip 12 emits light mainly toward the wavelength conversion material 14. However, there is also light emitted from the LED chip 12 to the side of the LED chip 12. As described above, in the light emitting device 10, the plurality of LED chips 12 are densely arranged. That is, since the intervals between the plurality of LED chips 12 are narrow, there is a high probability that the light emitted from one LED chip 12 to the side of the LED chip 12 will hit another LED chip 12 and be absorbed. Therefore, the light extraction efficiency decreases.

  Here, when the bubble 16 is included in the sealing member 15 filling between the plurality of LED chips 12, the light is reflected by the bubble 16 as shown in FIG. 5. This is because the refractive index in the bubble 16 is lower than the refractive index of the sealing member 15. As described above, the light reflected by the bubbles 16 suppresses the light emitted from one LED chip 12 to the side of the LED chip 12 from being absorbed by the other LED chips 12, and the LED chip. The light traveling from 12 toward the wavelength conversion material 14 can be increased. That is, the light extraction efficiency can be improved. In addition, as FIG. 5 shows, the light which injected into the bubble 16 may be refracted.

  The size on the order of μm is, for example, a size having a diameter of 1 μm to 100 μm. As described above, when the arrangement interval of the plurality of LED chips 12 is about 0.1 mm, the bubbles 16 having a diameter of 1 μm or more and 50 μm or less may be dispersedly arranged in the sealing member 15. Thereby, the probability that the light emitted from the LED chip 12 to the side of the LED chip 12 hits the bubble 16 one or more times is increased.

  In order to obtain the same effect, it is also conceivable to include light diffusion particles in the sealing member 15 instead of the bubbles 16. Here, the bubble 16 is superior to the light diffusing particle having a certain limit in size in that the size can be freely changed by a manufacturing method. Further, the bubble 16 is superior to the light diffusion particle in terms of manufacturing cost.

[Method for Manufacturing Light Emitting Device]
Next, a method for manufacturing the light emitting device 10 will be described. FIG. 6 is a flowchart of a method for manufacturing the light emitting device 10. The following manufacturing method is an example.

  First, a plurality of LED chips 12 are mounted on the upper surface of the substrate 11 (S11). The LED chip 12 is mounted by die bonding the LED chip 12 with a die attach agent or the like. At this time, the plurality of LED chips 12 are electrically connected by, for example, bonding wires and wiring.

  Next, the dam material 13 is formed in a rectangular ring shape surrounding the plurality of LED chips 12 on the upper surface of the substrate 11 (S12). A dispenser that discharges white resin is used to form the dam material 13.

  Next, the sealing member 15 that collectively seals the plurality of LED chips 12 is formed (S13). Specifically, a region surrounded by the dam material 13 is filled (injected) with a translucent resin material (sealing material) containing bubbles 16 and cured by heating or light irradiation. The translucent resin material should have a low viscosity so as to be sufficiently filled between the LED chips 12.

  Next, the wavelength conversion material 14 is formed (S14). Specifically, a translucent resin material containing a phosphor for forming the wavelength conversion material 14 is applied (injected) on the sealing member 15. Thereafter, the applied light transmitting resin material is cured by heating or light irradiation, whereby the wavelength conversion material 14 is formed.

  In addition, what kind of existing methods may be used for preparation of the translucent resin material containing the bubble 16, and it does not specifically limit. The translucent resin material containing the bubbles 16 is produced as follows, for example. FIG. 7 is a schematic diagram for explaining a method for producing a translucent resin material containing bubbles 16.

  The cylindrical body 20 shown in FIG. 7 has a gas inlet 21 into which a gas (air) is injected and a liquid inlet 22 into which a translucent resin material is injected at the side. Further, inside the cylindrical body 20, a shaft 23 disposed along the cylinder axis, and a stirrer 24 and a stirrer 25 (propeller) connected to the shaft 23 are disposed.

  After the air and the translucent resin material are injected into the cylindrical body 20, the shaft 23 is rotated, whereby the air and the translucent resin material in the cylindrical body 20 are mixed with the stirrer 24 and Stirring is performed by the stirrer 25. Thereby, bubbles 16 are generated in the translucent resin material. The size of the bubble 16 can be adjusted by the amount of air injected, the rotational speed of the shaft 23, and the like.

[Modification 1]
In the first embodiment, the sealing member 15 is disposed between the lower surface of the wavelength conversion material 14 and the upper surface of the LED chip 12. However, when the sealing member 15 is disposed between the lower surface of the wavelength conversion material 14 and the upper surface of the LED chip 12, part of the light emitted upward from the LED chip 12 is reflected by the bubbles 16. For this reason, it is better not to arrange the sealing member 15 between the lower surface of the wavelength conversion material 14 and the upper surface of the LED chip 12. Therefore, for example, the upper surface of the LED chip 12 and the lower surface of the wavelength conversion material 14 may be in contact with each other. FIG. 8 is a schematic cross-sectional view of the light emitting device according to the first modification.

  In the light emitting device 10a shown in FIG. 8, the sealing member 15 is not disposed between the upper surfaces of the plurality of LED chips 12 and the lower surface of the wavelength conversion material 14, but the upper surface of the LED chip 12 and the wavelength conversion material. 14 is in contact with the lower surface. Thereby, it is suppressed that a part of light which LED chip 12 emits upwards is reflected by the bubble 16. In the light emitting device 10a, the upper surface of the sealing member 15 and the lower surface of the wavelength conversion material 14 are also in contact.

  Such a light emitting device 10a forms the wavelength conversion material 14 after being filled and cured to such an extent that the translucent resin material for forming the sealing member 15 does not reach the upper surfaces of the plurality of LED chips 12. For this purpose, a translucent resin material containing a phosphor is preferably applied and cured.

  Here, the dam material 13 a included in the light emitting device 10 a is similar in material (base material) to the dam material 13, but is different in shape from the dam material 13. Specifically, the height h of the inner surface of the dam material 13a included in the light emitting device 10a is equal to the height of the plurality of LED chips 12. Thereby, the light emitting device 10a can be easily manufactured by filling the translucent resin material for forming the sealing member 15 with the height h of the inner surface of the dam member 13a as a guide. In addition, the height h of the inner surface of the dam material 13a does not need to be equal to the height of the plurality of LED chips 12, and may be equal to or less than the height of the plurality of LED chips 12. The height of the inner surface of the dam material 13a is a level difference (a surface on which the wavelength conversion material 14 is placed) from the upper surface of the substrate 11 when there is a step where the wavelength conversion material 14 is placed like the light emitting device 10a. ).

  In addition, in order to suppress that a part of light emitted upward from the LED chip 12 is reflected in the air layer such as the bubble 16, the space between the lower surface of the wavelength conversion material 14 and the upper surface of the LED chip 12. The translucent resin material which does not contain the bubble 16 should just be arrange | positioned. Between the lower surface of the wavelength conversion material 14 and the upper surface of the LED chip 12, only the sealing member 15 that does not include the bubbles 16, that is, the base material of the sealing member 15 may be disposed.

[Modification 2]
In the first embodiment, the wavelength conversion material 14 is formed by applying and curing a translucent resin material including a phosphor for forming the wavelength conversion material 14. A molded (solid) wavelength conversion material 14 may be placed on the upper surface of 12. FIG. 9 is a schematic cross-sectional view of such a light emitting device according to the second modification.

  As shown in FIG. 9, the wavelength conversion material 14 b included in the light emitting device 10 b is a sheet-like member, and is placed on the upper surfaces of the plurality of LED chips 12 with the adhesive sheet material 17 interposed therebetween. The wavelength conversion material 14b has the same configuration as the wavelength conversion material 14 except that the wavelength conversion material 14b has been molded.

  The bonding sheet material 17 is a resin member having translucency for bonding the wavelength conversion material 14b. The bonding sheet material 17 is preferably flexible so as to be in close contact with each of the wavelength conversion material 14 b and the plurality of LED chips 12. Further, the adhesive sheet material 17 may include a phosphor.

  Further, instead of the adhesive sheet material 17, a liquid translucent resin material is applied to the upper surfaces of the plurality of LED chips 12 and the sealing member 15, and the wavelength conversion material 14 b is applied on the applied translucent resin material. After the is placed, the translucent resin material may be cured.

[Modification 3]
In the first embodiment, the dam material 13 is white resin and does not have translucency, but the dam material 13 may have translucency. At this time, the dam material having translucency may have bubbles 16. FIG. 10 is a schematic cross-sectional view of a light emitting device according to Modification 3.

  As shown in FIG. 10, the dam material 13 c included in the light emitting device 10 c is made of a resin material having translucency and includes bubbles 16. The resin material is, for example, a methyl silicone resin, but may be an epoxy resin or a urea resin.

  Thereby, the light emitted from the LED chip 12 located on the side of the dam material 13c toward the dam material 13c is reflected upward by the bubbles 16, so that the dam material 13c does not have translucency. The light extraction efficiency is improved. In addition, when the dam material 13c does not have translucency, even if the dam material 13c is a highly reflective white resin, a loss due to light absorption occurs.

  Moreover, the wavelength conversion material 14c with which the light-emitting device 10 is provided has a rectangular dome shape in plan view, and surrounds the dam material 13c from the side. In other words, the wavelength conversion material 14c further has a side wall portion surrounding the dam material 13c from the side. Thereby, the light which passes through from the dam material 13c to the side can be used as white light by entering the wavelength conversion material 14c. That is, the light extraction efficiency is improved. The material (base material) of the wavelength conversion material 14c is the same as that of the wavelength conversion material 14.

[Effects]
As described above, the light-emitting device 10 includes the substrate 11, the plurality of LED chips 12 disposed on the substrate 11, the dam material 13 disposed on the substrate 11 and surrounding the plurality of LED chips 12 from the side. Is provided. The light emitting device 10 includes a wavelength conversion material 14 containing a phosphor and a sealing member 15 that fills at least the space between the plurality of LED chips 12. The sealing member 15 is disposed above the plurality of LED chips 12. Inside, the bubbles 16 in the order of μm are arranged in a dispersed manner.

  Thereby, since the light emitted from one LED chip 12 to the side of the LED chip 12 is reflected upward by the bubbles 16, the light is suppressed from being absorbed by the other LED chips 12. The light which goes to the wavelength conversion material 14 from the LED chip 12 can be increased. That is, the light extraction efficiency can be improved.

  Further, the sealing member 15 may not be disposed between the plurality of LED chips 12 and the wavelength conversion material 14.

  Thereby, it is suppressed that a part of light which LED chip 12 emits upwards is reflected by the bubble 16.

  Further, like the light emitting device 10a, the height of the inner surface of the dam member 13a may be equal to or less than the height of the plurality of LED chips 12.

  Thereby, the light emitting device 10a can be easily manufactured by filling the translucent resin material for forming the sealing member 15 with the height of the inner surface of the dam member 13a as a guide.

  Further, like the light emitting device 10c, the dam material 13c has translucency, and bubbles 16 in the order of μm are dispersed in the dam material 13c, and the wavelength conversion material 14 further includes the dam material 13c. You may have a side wall part which encloses from the side.

  Thereby, since the light emitted from the LED chip 12 toward the dam material 13c is reflected upward by the bubbles 16, the light extraction efficiency is higher than when the dam material 13c does not have translucency. Be improved.

  In the sealing member 15, bubbles 16 having a diameter of 1 μm or more and 50 μm or less may be dispersedly arranged.

  Thereby, the probability that the light emitted from the LED chip 12 to the side of the LED chip 12 hits the bubble 16 one or more times is increased.

  The arrangement interval of the plurality of LED chips 12 is shorter than the width of one LED chip 12 of the plurality of LED chips 12.

  As described above, the plurality of LED chips 12 are densely mounted (densely arranged), whereby the light emitting device 10 with high luminous flux and easy light distribution control is realized.

(Embodiment 2)
Next, lighting device 200 according to Embodiment 2 will be described with reference to FIGS. 11 and 12. FIG. 11 is a cross-sectional view of lighting apparatus 200 according to Embodiment 2. FIG. 12 is an external perspective view of lighting apparatus 200 and its peripheral members according to Embodiment 2.

  As shown in FIGS. 11 and 12, the lighting apparatus 200 according to the second embodiment is, for example, embedded in a ceiling of a house or the like to irradiate light downward (corridor or wall). It is an embedded illumination device such as a light.

  The lighting device 200 includes the light emitting device 10. The lighting device 200 further includes a substantially bottomed tubular instrument body configured by coupling the base 210 and the frame body part 220, and a reflector 230 and a translucent panel 240 disposed in the instrument body. Is provided. Note that when the light emitting device 10 is used in a lighting device having a circular light emission port like the lighting device 200, the dam member 13 included in the light emitting device 10 is preferably formed in an annular shape.

  The base 210 is a mounting base to which the light emitting device 10 is attached and a heat sink that dissipates heat generated in the light emitting device 10. Base 210 is formed in a substantially cylindrical shape using a metal material, and is formed of aluminum in the second embodiment.

  A plurality of radiating fins 211 projecting upward are provided on the upper portion (ceiling side portion) of the base portion 210 at regular intervals along one direction. Thereby, the heat generated in the light emitting device 10 can be radiated efficiently.

  The frame body part 220 has a substantially cylindrical cone part 221 having a reflection surface on the inner surface, and a frame body part 222 to which the cone part 221 is attached. The cone portion 221 is formed using a metal material, and can be manufactured by drawing or press-molding an aluminum alloy or the like, for example. The frame main body 222 is formed of a hard resin material or a metal material. The frame body part 220 is fixed by attaching the frame body body part 222 to the base part 210.

  The reflecting plate 230 is an annular frame-shaped (funnel-shaped) reflecting member having an inner surface reflecting function. The reflector 230 can be formed using a metal material such as aluminum. The reflector 230 may be formed of a hard white resin material instead of a metal material.

  The translucent panel 240 is a translucent member having light diffusibility and translucency. The translucent panel 240 is a flat plate disposed between the reflection plate 230 and the frame body portion 220, and is attached to the reflection plate 230. The translucent panel 240 can be formed in a disk shape with a transparent resin material such as acrylic and polycarbonate.

  Note that the lighting device 200 may not include the translucent panel 240. By not providing the translucent panel 240, the luminous flux of the light emitted from the lighting device 200 can be improved. The illuminating device 200 may include a lens for controlling light distribution instead of the translucent panel 240.

  In addition, as illustrated in FIG. 12, the lighting device 200 includes a lighting device 250 that supplies power to the light emitting device 10 to light the light emitting device 10, and AC power from a commercial power source to the lighting device 250. A relay terminal block 260 is connected. Specifically, the lighting device 250 converts AC power relayed from the terminal block 260 into DC power and outputs the DC power to the light emitting device 10.

  The lighting device 250 and the terminal block 260 are fixed to a mounting plate 270 provided separately from the instrument body. The mounting plate 270 is formed by bending a rectangular plate member made of a metal material. The lighting device 250 is fixed to the lower surface of one end portion in the longitudinal direction, and the terminal block 260 is mounted on the lower surface of the other end portion. Fixed. The mounting plate 270 is connected to a top plate 280 fixed to the upper part of the base 210 of the instrument body.

  As described above, the lighting device 200 includes the light emitting device 10 and the lighting device 250 that supplies the light emitting device 10 with power for lighting the light emitting device 10. In such an illumination device 200, the light extraction efficiency from the light emitting device 10 is improved. The lighting device 200 may include a light emitting device 10a, a light emitting device 10b, or a light emitting device 10c instead of the light emitting device 10.

  In the second embodiment, the downlight is exemplified as the lighting device, but the present invention may be realized as another lighting device such as a spotlight.

(Other embodiments)
Although the light-emitting device and the lighting device according to the embodiment have been described above, the present invention is not limited to the above-described embodiment.

  In the above embodiment, the light emitting device emits white light by a combination of an LED chip that emits blue light and a yellow phosphor, but the configuration for emitting white light is not limited thereto.

  For example, a wavelength conversion material containing a red phosphor and a green phosphor and an LED chip that emits blue light may be combined. That is, the wavelength conversion material may include a red phosphor and a green phosphor.

  Alternatively, an ultraviolet LED chip that emits ultraviolet light having a shorter wavelength than an LED chip that emits blue light, and a blue phosphor or green that emits blue light, red light, and green light when excited mainly by ultraviolet light. A phosphor and a red phosphor may be combined. That is, the LED chip may emit ultraviolet light. The wavelength conversion material may include a blue phosphor, a green phosphor, and a red phosphor.

  Moreover, in the said embodiment, the LED chip was illustrated as a light emitting element used for a light-emitting device. However, other types of solid-state light-emitting elements such as semiconductor light-emitting elements such as semiconductor lasers or EL elements such as organic EL (Electro Luminescence) or inorganic EL may be employed as the light-emitting elements.

  In the light emitting device, two or more types of light emitting elements having different emission colors may be used. For example, the light emitting device may include an LED chip that emits red light in addition to an LED chip that emits blue light for the purpose of enhancing color rendering.

  The stacked structure shown in the cross-sectional view of the above embodiment is an example, and the present invention is not limited to the stacked structure. That is, the present invention also includes a stacked structure that can realize the characteristic functions of the present invention, as in the above-described stacked structure. For example, another layer may be provided between the layers of the stacked structure as long as the same function as the stacked structure can be realized.

  In the above embodiment, the main materials constituting each layer of the stacked structure are illustrated, but each layer of the stacked structure includes other materials as long as the same function as the stacked structure can be realized. Also good.

  In addition, it is realized by variously conceiving various modifications conceived by those skilled in the art for each embodiment, or by arbitrarily combining the components and functions in each embodiment without departing from the spirit of the present invention. This form is also included in the present invention.

10, 10a, 10b, 10c Light emitting device 11 Substrate 12 LED chip (light emitting element)
13, 13a, 13c Dam material 14, 14b, 14c Wavelength conversion material 15 Sealing member 16 Bubble 200 Lighting device

Claims (7)

A substrate,
A plurality of light emitting elements disposed on the substrate;
A dam material disposed on the substrate and surrounding the plurality of light emitting elements from a side;
A wavelength conversion material containing a phosphor, disposed above the plurality of light emitting elements;
A sealing member that fills at least between the plurality of light emitting elements,
A light emitting device in which bubbles in the order of μm are dispersed in the sealing member. The light emitting device according to claim 1, wherein the sealing member is not disposed between the plurality of light emitting elements and the wavelength conversion material. The light emitting device according to claim 2, wherein a height of an inner surface of the dam material is equal to or less than a height of the plurality of light emitting elements. The dam material has translucency,
In the dam material, bubbles in the order of μm are dispersed and arranged,
The light emitting device according to claim 1, wherein the wavelength conversion material further includes a side wall portion surrounding the dam material from the side. The light-emitting device according to claim 1, wherein bubbles having a diameter of 1 μm or more and 50 μm or less are dispersed in the sealing member. The light emitting device according to claim 1, wherein an interval between the plurality of light emitting elements is shorter than a width of one of the plurality of light emitting elements. The light emitting device according to any one of claims 1 to 6,
A lighting device comprising: a lighting device that supplies power for lighting the light emitting device to the light emitting device.

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