JP2017130485A - プラズマ処理装置 - Google Patents
プラズマ処理装置 Download PDFInfo
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- JP2017130485A JP2017130485A JP2016007030A JP2016007030A JP2017130485A JP 2017130485 A JP2017130485 A JP 2017130485A JP 2016007030 A JP2016007030 A JP 2016007030A JP 2016007030 A JP2016007030 A JP 2016007030A JP 2017130485 A JP2017130485 A JP 2017130485A
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- 239000000758 substrate Substances 0.000 claims abstract description 109
- 238000005192 partition Methods 0.000 claims abstract description 35
- 238000007664 blowing Methods 0.000 claims description 39
- 230000005684 electric field Effects 0.000 abstract description 6
- 238000005530 etching Methods 0.000 description 33
- 238000001020 plasma etching Methods 0.000 description 13
- 239000011521 glass Substances 0.000 description 10
- 230000000694 effects Effects 0.000 description 8
- 238000009616 inductively coupled plasma Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 230000001965 increasing effect Effects 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 2
- 238000005513 bias potential Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000003507 refrigerant Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Abstract
Description
11 プラズマ処理装置
20 チャンバ
20a 上壁
21 載置台
22 隔壁部
22a 平板部材
23 支持枠
24a〜24h 第1シャワープレート
25b ガス吹出孔
44 処理ガス配管
50 高周波アンテナ
54a〜54d 第2シャワープレート
55b ガス吹出孔
Claims (6)
- 基板が載置される基板載置面を有する載置台と、
前記載置台を内部に収容するチャンバと、
前記チャンバの内部において前記基板載置面と対向するように配置された隔壁部と、
前記隔壁部の上面に配置され、高周波電力が印加されることにより前記基板載置面と前記隔壁部との間の処理空間にプラズマを生成させる高周波アンテナと、
前記隔壁部の下面に配置され、前記処理空間に処理ガスを導入するガス導入ユニットと、を有し、前記載置台に載置された基板に対して前記プラズマによる処理を施すプラズマ処理装置であって、
前記ガス導入ユニットは、
長尺状の形状を有し、前記基板載置面と略直交する方向に前記処理ガスを吹き出す複数のガス吹出孔を有する複数の第1のシャワープレートと、
長尺状の形状を有し、前記基板載置面と略平行な方向に前記処理ガスを吹き出す複数のガス吹出孔を有する複数の第2のシャワープレートと、を備え、
複数の前記第1のシャワープレートと前記第2のシャワープレートは、前記隔壁部から前記載置台に載置された基板を見たときに、前記第1のシャワープレートと前記第2のシャワープレートの長手方向が放射状に延びる方向となるように配置されていることを特徴とするプラズマ処理装置。 - 前記第1のシャワープレートに設けられたガス吹出孔の数と前記第2のシャワープレートに設けられたガス吹出孔の数は等しく、且つ、前記第1のシャワープレートに設けられたガス吹出孔のコンダクタンスと前記第2のシャワープレートに設けられたガス吹出孔のコンダクタンスとは略等しいことを特徴とする請求項1記載のプラズマ処理装置。
- 2対で構成される複数の前記第1のシャワープレートのうち、1対は前記隔壁部の長辺の中央部を結ぶ線上に位置し、別の1対は前記隔壁部の短辺の中央部を結ぶ線上に位置していることを特徴とする請求項1又は2記載のプラズマ処理装置。
- 前記ガス導入ユニットは、複数の前記第2のシャワープレートのみで構成され、
複数の前記第2のシャワープレートはそれぞれ、長手方向が放射状に延びる方向となるように配置されていることを特徴とする請求項1記載のプラズマ処理装置。 - 複数の前記第2のシャワープレートは、その長手方向の一端がそれぞれ、前記載置台に矩形の基板が載置されたときの前記基板の角部又はその近傍の上部に位置するように、配置されていることを特徴とする請求項1乃至3のいずれか1項に記載のプラズマ処理装置。
- 前記隔壁部は、矩形形状を有し、
前記第1のシャワープレートを4つ有し、
4つの前記第1のシャワープレートのうち、2つの第1のシャワープレートは、前記隔壁部の長辺の中央部を結ぶ線上に位置し、残る2つの第1のシャワープレートは、前記隔壁部の短辺の中央部を結ぶ線上に位置していることを特徴とする請求項5記載のプラズマ処理装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016007030A JP6643096B2 (ja) | 2016-01-18 | 2016-01-18 | プラズマ処理装置 |
TW106100728A TWI733737B (zh) | 2016-01-18 | 2017-01-10 | 電漿處理裝置 |
KR1020170007848A KR101902095B1 (ko) | 2016-01-18 | 2017-01-17 | 플라즈마 처리 장치 |
CN201710036715.6A CN106981446B (zh) | 2016-01-18 | 2017-01-18 | 等离子体处理装置 |
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JP2016007030A JP6643096B2 (ja) | 2016-01-18 | 2016-01-18 | プラズマ処理装置 |
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Publication Number | Publication Date |
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JP2017130485A true JP2017130485A (ja) | 2017-07-27 |
JP6643096B2 JP6643096B2 (ja) | 2020-02-12 |
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JP2016007030A Active JP6643096B2 (ja) | 2016-01-18 | 2016-01-18 | プラズマ処理装置 |
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JP (1) | JP6643096B2 (ja) |
KR (1) | KR101902095B1 (ja) |
CN (1) | CN106981446B (ja) |
TW (1) | TWI733737B (ja) |
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CN113818005A (zh) * | 2020-06-19 | 2021-12-21 | 拓荆科技股份有限公司 | 一种薄膜制备设备及方法 |
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KR101046902B1 (ko) * | 2005-11-08 | 2011-07-06 | 도쿄엘렉트론가부시키가이샤 | 샤워 플레이트 및 샤워 플레이트를 사용한 플라즈마 처리장치 |
JP5069427B2 (ja) * | 2006-06-13 | 2012-11-07 | 北陸成型工業株式会社 | シャワープレート、並びにそれを用いたプラズマ処理装置、プラズマ処理方法及び電子装置の製造方法 |
KR101352365B1 (ko) * | 2006-08-09 | 2014-01-16 | 엘아이지에이디피 주식회사 | 플라즈마 처리장치 |
JP5010234B2 (ja) * | 2006-10-23 | 2012-08-29 | 北陸成型工業株式会社 | ガス放出孔部材を一体焼結したシャワープレートおよびその製造方法 |
JP2009152434A (ja) * | 2007-12-21 | 2009-07-09 | Tokyo Electron Ltd | 基板処理装置 |
KR101251930B1 (ko) * | 2011-06-03 | 2013-04-08 | (주)스마텍 | 필드 강화 유도 결합 플라즈마 처리 장치 및 플라즈마 형성 방법 |
US9275840B2 (en) | 2014-01-25 | 2016-03-01 | Yuri Glukhoy | Method for providing uniform distribution of plasma density in a plasma treatment apparatus |
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2016
- 2016-01-18 JP JP2016007030A patent/JP6643096B2/ja active Active
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2017
- 2017-01-10 TW TW106100728A patent/TWI733737B/zh active
- 2017-01-17 KR KR1020170007848A patent/KR101902095B1/ko active IP Right Grant
- 2017-01-18 CN CN201710036715.6A patent/CN106981446B/zh active Active
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Publication number | Publication date |
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KR20170086410A (ko) | 2017-07-26 |
TWI733737B (zh) | 2021-07-21 |
JP6643096B2 (ja) | 2020-02-12 |
CN106981446A (zh) | 2017-07-25 |
CN106981446B (zh) | 2019-11-05 |
KR101902095B1 (ko) | 2018-09-27 |
TW201738953A (zh) | 2017-11-01 |
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