JP2017129854A - ナノ構造材料の構造体及び方法 - Google Patents
ナノ構造材料の構造体及び方法 Download PDFInfo
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- JP2017129854A JP2017129854A JP2016253529A JP2016253529A JP2017129854A JP 2017129854 A JP2017129854 A JP 2017129854A JP 2016253529 A JP2016253529 A JP 2016253529A JP 2016253529 A JP2016253529 A JP 2016253529A JP 2017129854 A JP2017129854 A JP 2017129854A
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- Prior art keywords
- layer
- dielectric layer
- dielectric
- nanostructured
- photonic crystal
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- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/002—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials
- G02B1/005—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials made of photonic crystals or photonic band gap materials
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- C—CHEMISTRY; METALLURGY
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- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Nanotechnology (AREA)
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Abstract
Description
デバイス製作:これらの実施例において、光子結晶(PC)製作は、PC格子のために所望の複製成形された構造体のネガ画像を含む「マスター」シリコンウエハを利用した。鋳型は、反応性イオンエッチング(PlasmaLab Freon/O2反応性イオンエッチング装置)で80nmの柱を製造する電子線リソグラフィー(JEOL JBX−6000FS)パターンを持つ熱酸化物SiO2層を含む。エッチングされた面積を、20分間、ピラニアエッチング液の溶液(硫酸と過酸化水素との3:1(v/v)混合物)で洗浄し、次いで脱イオン水ですすぎ、N2で乾燥させ、2滴のNo−Stick溶液を用いて密閉容器内で、(トリデカフルオロ−1,1,2,2−テトラヒドロオクチル)トリクロロシラン(No−Stick、Alfa Aesar)の気相堆積で1時間処理した。エッチング後処理は、マスターウエハからの複製物の一貫した除去を可能にする。
各試験構造体の出力を特性付けるために使用される試験設定を、LabVIEW OmniDriverインターフェースによって操作した。QDのための励起源は、λ=375nmの中心波長を有する、コリメートしたUV発光ダイオード(Thor Labs、高輝度濃紫LED)である。LEDは20nmの全幅半値を有し、また350<λ<390nmの帯域フィルタを、試験下の構造体に達すること及びQD放射の測定を妨げることから、いかなる非UV波長をも排除するために使用した。試験のため、構造体を、試験設定の光軸に対する構造体の表面の配向において、0.1°の段階増量を可能にするモータ付きの回転ステージ上に乗せた。UVフィルタ及び光ファイバー上のコリメートレンズを通過した後の各位置での出力放射を収集し、次いでUSB2000+Ocean Optics分光計により分析した。
製造したデバイス構造体は、埋め込まれたQDの発光波長を有するPC共振波長と、一致または不一致のいずれかである領域から、QD放射強度の対照比較を可能にする2つの別個の2次元のPC領域を含む。図6(a)で示されるように、領域をチェッカーボード形式で交互配置し、その交互領域は別個の共振波長を有する。各領域は、図6(a)の挿入画に示されるように2つの直交性の周期を有し、2つの周期は、埋め込まれたQDの励起及び発光波長の両方を増強するように設計された。例えば、チェッカーボードの領域1内の2D−PCは、X方向において短周期(L=200nm、40%使用率)を有し、Y方向においてはより長い周期(L=340nm)を有する。短周期を、QD励起のために使用する350<λ<390nmのUV波長で、導波モード共振を産するように設計する一方で、より長い周期を、QD放射のλ=615nmの波長で共振を産するように設計する。チェッカーボードの領域4は、X方向においてL=200nm(70%使用率)の短周期、及びY方向においてはL=250nmの長周期を有し、短周期を、QD励起波長で導波モード共振を産するように設計するが、長周期はλ=480nmの波長で共振を産する。したがって、λ=615nmで中心の発光波長を有するQDを構造体全体の内部に埋め込んだとき、全てのQD(チェッカーボードの両部分内の)は、共振増強効果で励起するが、領域1内部のQDのみが増強した抽出効果に関与する。差分時間領域電磁コンピュータシミュレーション(Lumerical、FDTD)を使用して、95nmの厚さのTiO2(n=2.35、Metricon Model 2010/Mプリズム結合器)層が、λ=615nmでの無偏光QD放射への連結を最適化するであろうことを決定する。これは、同じ格子構造体を使用して製造した前のPCデバイス内の共振条件から推定される値と一致したが、TiO2層の交互堆積の厚さとは一致しなかった。
Claims (15)
- 誘電層内部に1つ以上の発光ナノ構造材料を含む前記誘電層を備える光子結晶を含む、構造体。
- 中に発光ナノ構造材料を含む誘電層を備え、
発光ナノ構造材料の第1の組が、前記誘電層の第1の深度に位置付けられ、発光ナノ構造材料の第2の組が、前記誘電層の前記第1の深度とは異なる第2の深度に位置付けられる、構造体。 - 放射波長が、前記発光ナノ構造材料の第1の組と第2の組との間で異なる、請求項1または2に記載の構造体。
- 前記構造体が光子結晶を含む、請求項2または3に記載の構造体。
- 前記構造体が、一緒に入れ子になった複数の光子結晶構造体を含み、各光子結晶構造体が誘電層内部に1つ以上の発光ナノ構造材料を含む前記誘電層を備える、請求項1〜4のいずれか一項に記載の構造体。
- 前記発光ナノ構造材料が前記誘電層内部に埋め込まれている、請求項1〜5のいずれか一項に記載の構造体。
- 前記誘電層が金属酸化物を含む、請求項1〜6のいずれか一項に記載の構造体。
- 前記ナノ構造材料が量子ドット、蛍光染料、または蛍光物質を含む、請求項1〜7のいずれか一項に記載の構造体。
- 前記構造体が、発光デバイス、光検出デバイス、化学センサ、光起電力デバイス、蛍光バックライトフィルム、ダイオード、トランジスタ、生物センサ、病理学的検出器、または生物学的に活性な表面を提供する、請求項1〜8のいずれか一項に記載の構造体。
- 光子結晶系を形成する方法であって、
1つ以上の誘電材料と共に配置される1つ以上の発光ナノ構造材料を有する層を、基材表面上に適用することを含む、方法。 - 1)誘電材料が前記基材上に適用され、2)1つ以上のナノ構造材料が、前記適用された誘電材料上に適用され、3)誘電材料が前記適用されたナノ構造材料上に適用される、請求項10に記載の方法。
- 構造体を形成する方法であって、
誘電表面を有する基材を、1つ以上のナノ構造材料を含む組成物で浸漬コーティングすることを含む、方法。 - 前記浸漬コーティング後に、誘電材料を前記基材に適用することを更に含む、請求項12に記載の方法。
- 前記構造体が光子結晶である、請求項12または13に記載の方法。
- 前記構造体または光子結晶系が、一緒に入れ子になった複数の光子結晶構造体を含み、各光子結晶構造体が、誘電層内部に1つ以上の発光ナノ構造材料を含む前記誘電層を備える、請求項10〜14のいずれか一項に記載の方法。
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110407152A (zh) * | 2018-04-26 | 2019-11-05 | 韩国机械研究院 | 具有滑动介电膜的基板及其制造方法 |
WO2022215150A1 (ja) * | 2021-04-06 | 2022-10-13 | シャープ株式会社 | 表示装置及び表示装置の製造方法 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9923124B2 (en) * | 2011-01-31 | 2018-03-20 | Mohammad A Mazed | Display device |
US10991856B2 (en) * | 2017-12-21 | 2021-04-27 | Lumileds Llc | LED with structured layers and nanophosphors |
CN108957839B (zh) * | 2018-08-09 | 2022-09-30 | 京东方科技集团股份有限公司 | 显示装置、显示面板、彩膜基板及彩膜 |
US11137603B2 (en) * | 2019-06-20 | 2021-10-05 | Facebook Technologies, Llc | Surface-relief grating with patterned refractive index modulation |
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005328040A (ja) * | 2004-04-12 | 2005-11-24 | Canon Inc | 積層型3次元フォトニック結晶及び発光素子及び画像表示装置 |
JP2006245580A (ja) * | 2005-02-28 | 2006-09-14 | Agilent Technol Inc | 埋め込まれたフォトルミネセント材料を有するフォトニック結晶の層を備えている発光素子、およびこの素子を製造する方法 |
JP2007281477A (ja) * | 2006-04-10 | 2007-10-25 | Samsung Electronics Co Ltd | 表面発光素子及びその製造方法 |
JP2012186414A (ja) * | 2011-03-08 | 2012-09-27 | Toshiba Corp | 発光装置 |
WO2015019220A1 (en) * | 2013-08-06 | 2015-02-12 | Koninklijke Philips N.V. | Enhanced emission from plasmonic coupled emitters for solid state lighting |
JP2015226064A (ja) * | 2014-05-27 | 2015-12-14 | ザ・ボード・オブ・トラスティーズ・オブ・ザ・ユニバーシティ・オブ・イリノイThe Board Of Trustees Of The University Of Illinois | ナノ構造材料の方法および素子 |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1219222C (zh) * | 2003-06-27 | 2005-09-14 | 南京大学 | 具有三维光子带隙的周期金属/介电结构光子晶体及制备方法 |
DE202005002110U1 (de) * | 2004-02-19 | 2005-05-04 | Hong-Yuan Technology Co., Ltd., Yonghe | Lichtemittierende Vorrichtung |
CN101010780B (zh) * | 2004-04-30 | 2012-07-25 | 纳米系统公司 | 纳米线生长和获取的体系和方法 |
US7799699B2 (en) | 2004-06-04 | 2010-09-21 | The Board Of Trustees Of The University Of Illinois | Printable semiconductor structures and related methods of making and assembling |
CN101151347A (zh) * | 2005-04-06 | 2008-03-26 | 松下电器产业株式会社 | 发光器件 |
EP2444470B1 (en) * | 2007-08-31 | 2016-10-26 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light-emitting device, and electronic appliance |
FR2921498B1 (fr) * | 2007-09-25 | 2010-08-13 | Commissariat Energie Atomique | Dispositif optique dispersif a cristal photonique tridimensionnel. |
KR100900288B1 (ko) * | 2007-10-29 | 2009-05-29 | 엘지전자 주식회사 | 발광 소자 |
JP5177682B2 (ja) * | 2008-06-27 | 2013-04-03 | 国立大学法人 東京大学 | 太陽電池 |
US20100126567A1 (en) * | 2008-11-21 | 2010-05-27 | Lightwave Power, Inc. | Surface plasmon energy conversion device |
US20100128351A1 (en) | 2008-11-21 | 2010-05-27 | 3M Innovative Properties Company | Curved sided cone structures for controlling gain and viewing angle in an optical film |
US9991427B2 (en) * | 2010-03-08 | 2018-06-05 | Cree, Inc. | Photonic crystal phosphor light conversion structures for light emitting devices |
US8538224B2 (en) * | 2010-04-22 | 2013-09-17 | 3M Innovative Properties Company | OLED light extraction films having internal nanostructures and external microstructures |
DE102010051286A1 (de) * | 2010-11-12 | 2012-05-16 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung |
US8692446B2 (en) | 2011-03-17 | 2014-04-08 | 3M Innovative Properties Company | OLED light extraction films having nanoparticles and periodic structures |
JP2013045948A (ja) * | 2011-08-25 | 2013-03-04 | Fujifilm Corp | 波長変換膜および光電変換装置 |
US8659221B2 (en) | 2011-08-26 | 2014-02-25 | 3M Innovative Properties Company | OLED light extraction film with multi-periodic zones of nanostructures |
KR101822500B1 (ko) | 2011-09-06 | 2018-01-29 | 삼성전자주식회사 | 양자점층 제조 방법 및 양자점층을 포함한 양자점 광전자소자 |
GB2501681A (en) * | 2012-04-30 | 2013-11-06 | Ibm | Nanoimprint lithographic methods |
TWI599570B (zh) * | 2012-09-28 | 2017-09-21 | 新日鐵住金化學股份有限公司 | Compounds for organic electroluminescent devices and organic electroluminescent devices |
DE102012110668A1 (de) * | 2012-11-07 | 2014-05-08 | Osram Opto Semiconductors Gmbh | Konvertermaterial, Verfahren zur Herstellung eines Konvertermaterials und optoelektronisches Bauelement |
KR20140074489A (ko) * | 2012-12-10 | 2014-06-18 | 삼성디스플레이 주식회사 | 광결정 형광체 |
CN103022215B (zh) * | 2012-12-26 | 2015-11-18 | 中国科学院微电子研究所 | 一种硅基锗外延结构及其制备方法 |
US8937294B2 (en) | 2013-03-15 | 2015-01-20 | Rohm And Haas Electronic Materials Llc | Multi-heterojunction nanoparticles, methods of manufacture thereof and articles comprising the same |
DE102014107473A1 (de) * | 2014-05-27 | 2015-12-03 | Osram Opto Semiconductors Gmbh | Konverterelement zur Konvertierung einer Wellenlänge, optoelektronisches Bauelement mit Konverterelement und Verfahren zum Herstellen eines Konverterelements |
JP6320172B2 (ja) * | 2014-05-29 | 2018-05-09 | Towa株式会社 | 電子部品の樹脂封止方法及び樹脂封止装置 |
-
2016
- 2016-12-21 EP EP16206031.3A patent/EP3188260B1/en active Active
- 2016-12-27 JP JP2016253529A patent/JP2017129854A/ja active Pending
- 2016-12-28 TW TW105143702A patent/TWI652523B/zh not_active IP Right Cessation
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- 2019-05-28 JP JP2019099708A patent/JP6768880B2/ja active Active
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Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005328040A (ja) * | 2004-04-12 | 2005-11-24 | Canon Inc | 積層型3次元フォトニック結晶及び発光素子及び画像表示装置 |
JP2006245580A (ja) * | 2005-02-28 | 2006-09-14 | Agilent Technol Inc | 埋め込まれたフォトルミネセント材料を有するフォトニック結晶の層を備えている発光素子、およびこの素子を製造する方法 |
JP2007281477A (ja) * | 2006-04-10 | 2007-10-25 | Samsung Electronics Co Ltd | 表面発光素子及びその製造方法 |
JP2012186414A (ja) * | 2011-03-08 | 2012-09-27 | Toshiba Corp | 発光装置 |
WO2015019220A1 (en) * | 2013-08-06 | 2015-02-12 | Koninklijke Philips N.V. | Enhanced emission from plasmonic coupled emitters for solid state lighting |
JP2015226064A (ja) * | 2014-05-27 | 2015-12-14 | ザ・ボード・オブ・トラスティーズ・オブ・ザ・ユニバーシティ・オブ・イリノイThe Board Of Trustees Of The University Of Illinois | ナノ構造材料の方法および素子 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110407152A (zh) * | 2018-04-26 | 2019-11-05 | 韩国机械研究院 | 具有滑动介电膜的基板及其制造方法 |
WO2022215150A1 (ja) * | 2021-04-06 | 2022-10-13 | シャープ株式会社 | 表示装置及び表示装置の製造方法 |
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