JP2017126632A5 - - Google Patents

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Publication number
JP2017126632A5
JP2017126632A5 JP2016004259A JP2016004259A JP2017126632A5 JP 2017126632 A5 JP2017126632 A5 JP 2017126632A5 JP 2016004259 A JP2016004259 A JP 2016004259A JP 2016004259 A JP2016004259 A JP 2016004259A JP 2017126632 A5 JP2017126632 A5 JP 2017126632A5
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JP
Japan
Prior art keywords
raw material
material particles
film
film formation
migration
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JP2016004259A
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English (en)
Japanese (ja)
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JP6693133B2 (ja
JP2017126632A (ja
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Priority to JP2016004259A priority Critical patent/JP6693133B2/ja
Priority claimed from JP2016004259A external-priority patent/JP6693133B2/ja
Priority to US16/067,754 priority patent/US10929579B2/en
Priority to KR1020187017536A priority patent/KR102671517B1/ko
Priority to PCT/JP2016/080993 priority patent/WO2017122404A1/ja
Publication of JP2017126632A publication Critical patent/JP2017126632A/ja
Publication of JP2017126632A5 publication Critical patent/JP2017126632A5/ja
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Publication of JP6693133B2 publication Critical patent/JP6693133B2/ja
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JP2016004259A 2016-01-13 2016-01-13 成膜シミュレーション方法、プログラム、および半導体加工システム Active JP6693133B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2016004259A JP6693133B2 (ja) 2016-01-13 2016-01-13 成膜シミュレーション方法、プログラム、および半導体加工システム
US16/067,754 US10929579B2 (en) 2016-01-13 2016-10-19 Film formation simulation method, program, and semiconductor processing system
KR1020187017536A KR102671517B1 (ko) 2016-01-13 2016-10-19 성막 시뮬레이션 방법, 프로그램 및 반도체 가공 시스템
PCT/JP2016/080993 WO2017122404A1 (ja) 2016-01-13 2016-10-19 成膜シミュレーション方法、プログラム、および半導体加工システム

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016004259A JP6693133B2 (ja) 2016-01-13 2016-01-13 成膜シミュレーション方法、プログラム、および半導体加工システム

Publications (3)

Publication Number Publication Date
JP2017126632A JP2017126632A (ja) 2017-07-20
JP2017126632A5 true JP2017126632A5 (enExample) 2019-02-14
JP6693133B2 JP6693133B2 (ja) 2020-05-13

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JP2016004259A Active JP6693133B2 (ja) 2016-01-13 2016-01-13 成膜シミュレーション方法、プログラム、および半導体加工システム

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Country Link
US (1) US10929579B2 (enExample)
JP (1) JP6693133B2 (enExample)
KR (1) KR102671517B1 (enExample)
WO (1) WO2017122404A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12557601B2 (en) 2019-05-07 2026-02-17 Sony Semiconductor Solutions Corporation Defect density calculation method, defect-density calculation program, defect-density calculation apparatus, heat treatment control system and machining control system
JP2023180839A (ja) * 2022-06-10 2023-12-21 ソニーセミコンダクタソリューションズ株式会社 成膜シミュレーション方法、成膜シミュレーションプログラム、成膜シミュレータおよび成膜装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2658840B2 (ja) * 1993-12-01 1997-09-30 日本電気株式会社 プロセスシミュレータおよびこれを用いたｃｖｄ装置およびプロセスシミュレーション方法
JP2000195766A (ja) * 1998-12-25 2000-07-14 Toshiba Corp シミュレ―ション装置、シミュレ―ション方法、シミュレ―ションプログラムを格納した記録媒体および固体電子装置の製造方法
JP4928694B2 (ja) * 2001-09-18 2012-05-09 三菱重工業株式会社 薄膜多結晶の膜構造同定方法
JP5428450B2 (ja) * 2009-03-30 2014-02-26 ソニー株式会社 イオン照射ダメージの予測方法とイオン照射ダメージのシミュレータ、およびイオン照射装置とイオン照射方法

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