JP2017117845A - Semiconductor light emitting element and manufacturing method of the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element and a manufacturing method of the same which can provide good surface condition to a last barrier layer to keep crystal quality thereby to improve luminous efficiency.SOLUTION: A semiconductor light emitting element includes a multiquantum well active layer where barrier layers and well layers are alternately laminated one by one and an electron block layer formed on the multiquantum well active layer, in which a last barrier layer as an uppermost layer of the barrier layers is thicker than any other barrier layers and includes a diffusion region where an impurity from the electrode block layer is diffused and a non-diffusion region where the impurity from the electron block layer does not reach.SELECTED DRAWING: Figure 3

Description

  The present invention relates to a semiconductor light emitting device and a method for manufacturing the same, and more particularly to a semiconductor light emitting device including a multiple quantum well structure and an electron block layer and a method for manufacturing the same.

  Conventionally, in order to increase the light emission efficiency of a semiconductor light emitting device such as a light emitting diode, a multiple quantum well (MQW) structure in which barrier layers and well layers are alternately stacked as an active layer has been adopted. Further, an electron block layer is formed of a material having an electron barrier higher than that of the barrier layer on the last barrier layer which is the uppermost barrier layer constituting the MQW active layer, and carriers overflow to the p-type semiconductor layer side. Some have been proposed to prevent the trapping of carriers in the MQW active layer (for example, Patent Documents 1 and 2).

  FIG. 6 is a timing chart showing a growth method of the last barrier layer and the electron block layer of the semiconductor light emitting device in the prior art. In a semiconductor light emitting device using a nitride material, after a GaN layer as a last barrier layer is grown, an AlGaN layer is grown as an electron blocking layer, and then a p-type GaN layer is grown.

  As shown in FIG. 6, in the growth process of the last barrier layer, the growth temperature is maintained at 800 ° C., and ammonia as a nitrogen material and TEG (Triethylgallium) as a gallium material are flown to grow a GaN layer. Next, the supply of TEG is stopped while maintaining the flow rate of ammonia, and the temperature is raised from 800 ° C. to 900 ° C. In this temperature raising step, the growth of the GaN layer is interrupted because the supply of TEG, which is a gallium raw material, is stopped.

Next, an AlGaN electron block layer containing Mg as a p-type impurity is grown by supplying ammonia, TMG (Trimethylgallium), TMA (Trimethylaluminum), and Cp ₂ Mg (Bis (cyclopentadienyl) magnesium) at a growth temperature of 900 ° C. Next, the supply of TMA is stopped while maintaining the growth temperature at 900 ° C., and a p-type GaN layer is grown.

JP 2001-015809 A JP 2009-130097 A

  In the prior arts of the cited references 1 and 2, the electron block layer is grown at a temperature higher than the temperature at which the MQW active layer is grown. Therefore, after the last barrier layer is grown, only the carrier gas and ammonia gas are flowed to interrupt the growth. However, the temperature was raised to the growth temperature of the electron blocking layer during the growth interruption, and the electron blocking layer was grown by flowing the raw material gas after the temperature rising.

  However, even while the growth is interrupted during the temperature rise, the surface of the last barrier layer will be exposed to the inside of the growth apparatus at a high temperature state, the surface state will deteriorate and the crystal quality will deteriorate. As a problem, the luminous efficiency of the semiconductor light emitting device is reduced.

  Accordingly, the present invention has been made in view of the above-described conventional problems, and a semiconductor light emitting device capable of maintaining the crystal quality by improving the surface state of the last barrier layer and improving the light emission efficiency, and a method for manufacturing the same. The purpose is to provide.

  In order to solve the above problems, a semiconductor light emitting device of the present invention comprises a multiple quantum well active layer in which barrier layers and well layers are alternately stacked, and an electron block layer formed on the multiple quantum well active layer. A last barrier layer, which is the uppermost layer of the barrier layers, is thicker than the other barrier layers, a diffusion region in which impurities from the electron block layer are diffused, and the electron block And a non-diffusion region to which impurities from the layer do not reach.

  In such a semiconductor light emitting device of the present invention, the last barrier layer is formed thicker than the barrier layer, the surface state of the last barrier layer is good, and impurities diffused from the electron block layer stop inside the last barrier layer. Therefore, it is possible to improve the luminous efficiency by preventing the influence of impurity diffusion to the multiple quantum well active layer.

  The film thickness of the last barrier layer may be 1.5 to 3 times the film thickness of the other barrier layer.

  The film thickness of the last barrier layer may be in the range of 20 nm to 30 nm.

  In order to solve the above-described problems, a method of manufacturing a semiconductor light emitting device according to the present invention includes growing a multiple quantum well active layer in which barrier layers and well layers are alternately stacked, and forming an electron block layer on the multiple quantum well active layer. A step of growing a last barrier layer, which is the uppermost layer of the barrier layers, includes a constant temperature growth step of crystal growth under the same temperature conditions as the other barrier layers, And a temperature rising growth step of continuing crystal growth while raising the growth temperature after the constant temperature growth step.

  In such a method of manufacturing a semiconductor light emitting device of the present invention, the surface condition of the last barrier layer is improved and the luminous efficiency is improved by providing the temperature rising growth step after the constant temperature growth step as the last barrier layer growth step. Can be made.

  The film thickness of the last barrier layer may be larger than the film thickness of the other barrier layer.

  The film thickness of the last barrier layer grown in the constant temperature growth step may be equal to or greater than the film thickness of the other barrier layer.

  Further, during and after the growth of the electron blocking layer, diffusion of impurities occurs from the electron blocking layer to the last barrier layer, and a diffusion region in which impurities from the electron blocking layer are diffused to the last barrier layer; A non-diffusion region to which impurities from the electron blocking layer have not reached may be formed.

  In the present invention, it is possible to provide a semiconductor light emitting device capable of improving the light emission efficiency by improving the surface state of the last barrier layer, maintaining the crystal quality, and the manufacturing method thereof.

It is a schematic diagram which shows the layer structure of the semiconductor light-emitting device 1 in 1st Embodiment. It is a schematic diagram explaining the structure of the light emitting layer 14 shown in FIG. 1 in detail. 3 is a timing chart showing a growth process from a last barrier layer 14c to a p-type GaN contact layer 16 in the first embodiment. It is a graph which shows the last barrier layer 14c film thickness and relative luminescence intensity of the Example of 1st Embodiment, and a prior art example. 12 is a timing chart showing a growth process from the last barrier layer 14c to the p-type GaN contact layer 16 in the second embodiment. 6 is a timing chart showing a growth method of a last barrier layer and an electron block layer of a semiconductor light emitting device in the prior art.

(First embodiment)
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. The same or equivalent components, members, and processes shown in the drawings are denoted by the same reference numerals, and repeated descriptions are omitted as appropriate.

  FIG. 1 is a schematic view showing a layer structure of a semiconductor light emitting device 1 in the present embodiment. The semiconductor light emitting device 1 includes a GaN buffer layer 11, a GaN foundation layer 12, an n-type GaN foundation layer 13, a light emitting layer 14, an electron block layer 15, and a p-type GaN contact layer 16 on a sapphire substrate 10. It has.

  The sapphire substrate 10 is a substrate cut out with the c-plane of the sapphire single crystal as the main surface. Although the sapphire substrate 10 having the c-plane as the main surface is shown here, it may be an off-substrate tilted from the c-plane in a predetermined crystal axis direction, and a-plane other than the c-plane, m-plane, r-plane, and other A high-order plane orientation may be used as the principal plane.

The GaN buffer layer 11 is a buffer layer made of GaN formed on the main surface of the sapphire substrate 10 and is grown at a relatively low temperature of about 500 ° C., for example. The GaN underlayer 12 is a layer made of a single crystal of GaN that is intentionally grown as non-doped without impurities. The film thickness of the GaN foundation layer 12 is, for example, about 3000 nm, but may be adjusted as necessary. The n-type GaN foundation layer 13 is a layer made of GaN single crystal doped with Si as an n-type impurity. The thickness of the n-type GaN foundation layer 13 is, for example, about 3000 nm, and the impurity concentration is, for example, about 1 × 10 ¹⁹ cm ⁻³ , but may be adjusted as necessary.

  The light emitting layer 14 is a multiple quantum well active layer in which well layers and barrier layers (barrier layers) are alternately stacked. The electron blocking layer 15 is a semiconductor layer that is formed on the light emitting layer 14 to prevent carrier overflow, and is made of a material that has a larger barrier to electrons than the barrier layer. The p-type GaN contact layer 16 is a layer made of a single crystal of GaN doped with Mg as a p-type impurity.

The impurity concentration of the p-type GaN contact layer 16 is, for example, about 1 × 10 ¹⁹ cm ⁻³ , but may be in the range of about 1 × 10 ¹⁸ cm ^{−3 to} 5 × 10 ²⁰ cm ⁻³ . The preferred film thickness range of the p-type GaN contact layer 16 is 50 to 150 nm, more preferably 80 to 100 nm.

  Although no electrode is shown in the semiconductor light emitting device 1 in FIG. 1, a known electrode structure may be adopted as the semiconductor light emitting device. For example, a partial region of the semiconductor layer is etched until the n-type GaN foundation layer 13 is exposed. An n-side electrode is formed, and a p-side electrode is formed on the p-type GaN contact layer 16. Details of the structure of the light emitting layer 14, the electron blocking layer 15, and the p-type GaN contact layer 16 will be described later.

  Here, as a material constituting the buffer layer, the GaN underlayer, and the p-type contact layer, GaN layers such as the GaN buffer layer 11, the GaN underlayer 12, the n-type GaN underlayer 13, and the p-type GaN contact layer 16 are taken as an example. Although mentioned, other materials such as AlGaN, InGaN, InAlGaN may be used. Further, conventionally known structures used for semiconductor light emitting devices such as a clad layer, a current confinement layer, and a current diffusion layer may be applied as necessary. Further, although an example of GaN is shown as the n-type underlayer, a layer made of n-type AlGaN may be used as the underlayer.

  FIG. 2 is a schematic diagram for explaining in detail the structure of the light emitting layer 14 shown in FIG. As shown in FIG. 2, the light emitting layer 14 of the present embodiment has a structure in which barrier layers 14a and well layers 14b are alternately repeated for five periods, and a last barrier layer 14c is formed on the last well layer 14b. . Examples of the barrier layer 14a include a GaN layer having a thickness of 12 nm, and examples of the well layer 14b include an InGaN layer having a thickness of 3 nm.

  The preferable film thickness range of the barrier layer 14a is 5 to 15 nm, and more preferably 8 to 12 nm. The preferable thickness range of the well layer 14b is 2 to 4 nm, and more preferably 2.5 to 3.5 nm. The last barrier layer 14c is made of GaN, which is the same material as the barrier layer 14a, and has a film thickness that is thicker than that of the barrier layer 14a. A preferable film thickness range is about 1.5 to 3 times that of the barrier layer 14a. The film thickness is 15 to 30 nm, and more preferably 20 to 30 nm.

The electron blocking layer 15 is formed on the last barrier layer 14c and is made of a material having a larger barrier to electrons than the last barrier layer 14c. The electron blocking layer 15 extends from the light emitting layer 14 having the multiple quantum well structure to the p-type GaN contact layer 16. To prevent carrier overflow. The electron blocking layer 15 is, for example, a p-type AlGaN layer doped with about 1 × 10 ¹⁸ cm ^{−3 to} 5 × 10 ²⁰ cm ⁻³ of Mg as a p-type impurity, and a preferable thickness range is 10 to 40 nm. Yes, more preferably 20 to 30 nm.

  Here, GaN is given as a material constituting the barrier layer 14a and the last barrier layer 14c, InGaN is given as a material constituting the well layer 14b, and AlGaN is given as a material constituting the electron block layer 15, but other materials are used. There may be. 2 shows a multi-quantum well structure having five periods as the light emitting layer 14, the number of periods may be adjusted as appropriate.

  Next, a method for manufacturing the semiconductor light emitting device 1 of this embodiment will be described. The semiconductor light emitting device 1 is manufactured by growing each layer by a conventionally used metal organic chemical vapor deposition (MOCVD) method. FIG. 3 shows a timing chart showing the growth process from the last barrier layer 14 c to the p-type GaN contact layer 16 as a part of the method for manufacturing the semiconductor light emitting device 1 of the present embodiment.

  First, the sapphire substrate 10 is installed in the reactor of the MOCVD apparatus, the substrate temperature is raised to 500 ° C., and TMG and ammonia are supplied as source gases while flowing hydrogen as a carrier gas. Thereby, the GaN buffer layer 11 which is a low-temperature buffer layer is formed on the main surface of the sapphire substrate 10 with a film thickness of several hundred nm.

  Next, the substrate temperature is raised to 1000 ° C., and TMG and ammonia are supplied as source gases while flowing hydrogen as a carrier gas. As a result, the GaN foundation layer 12 is formed on the GaN buffer layer 11 to a thickness of 3000 nm.

Next, hydrogen is supplied as a carrier gas while maintaining the substrate temperature at 1000 ° C., and TMG and ammonia as source gases and silane (SiH ₄ ) as a dopant gas are supplied. As a result, the n-type GaN underlayer 13 doped with Si as an n-type impurity is formed on the GaN underlayer 12 with a film thickness of 3000 nm.

  Next, the substrate temperature is lowered to 800 ° C., and TEG and ammonia which are raw material gases are supplied while flowing nitrogen as a carrier gas. As a result, a GaN layer having a thickness of 12 nm is formed on the n-type GaN foundation layer 13 as a barrier layer (barrier layer) 14a.

  Next, the substrate temperature is maintained at 800 ° C., nitrogen is supplied as a carrier gas, and TEG, ammonia, and TMI (Trimethyllinium) as source gases are supplied. As a result, an InGaN layer having a thickness of 3 nm is formed as a well layer 14b on the barrier layer 14a.

  After the barrier layer 14a and the well layer 14b are grown alternately and repeatedly for five periods, the substrate temperature is maintained at 800 ° C., nitrogen is supplied as a carrier gas, and TEG and ammonia as source gases are supplied. As a result, a GaN layer is formed to a thickness of 12 nm as a part of the last barrier layer 14c. This step grows the last barrier layer 14c while maintaining the same temperature conditions as the other barrier layers 14a, and corresponds to the constant temperature growth step of the present invention.

  Next, while raising the substrate temperature from 800 ° C. to 900 ° C., nitrogen is supplied as a carrier gas to supply TEG and ammonia as raw material gases. Thereby, the growth of the last barrier layer 14c grown in the constant temperature growth process is continued, and the film thickness of the last barrier layer 14c is increased to 20 to 30 nm. This step continues the growth of the last barrier layer 14c while raising the temperature from the growth temperature of the other barrier layer 14a to the growth temperature of the electron block layer 15, and corresponds to the temperature growth step of the present invention.

  As described above, the light emitting layer 14 having the multiple quantum well structure is formed by growing the five periods of the barrier layer 14a and the well layer 14b and the last barrier layer 14c. Here, the last barrier layer 14c is formed to be thicker than the other barrier layers 14a because the growth is continued in the temperature rising growth step after the same thickness as the other barrier layers 14a is formed in the constant temperature growth step. The Further, since the crystal growth continues while the temperature is raised, it is possible to prevent the surface state of the last barrier layer 14c from being deteriorated and the crystal quality from being lowered.

Next, hydrogen is supplied as a carrier gas while maintaining the substrate temperature at 900 ° C., and TMG, ammonia, and TMA as source gases and Cp ₂ Mg as a dopant gas are supplied. As a result, an AlGaN layer doped with Mg, which is a p-type impurity, is formed as the electron blocking layer 15 on the last barrier layer 14c to a thickness of 30 nm.

Next, hydrogen is supplied as a carrier gas while maintaining the substrate temperature at 900 ° C., and TMG and ammonia as source gases and Cp ₂ Mg as a dopant gas are supplied. Thereby, the p-type GaN contact layer 16 is formed to 100 nm on the electron block layer 15. After the uppermost layer of the semiconductor light emitting device 1 is grown, the substrate temperature is cooled to room temperature in a state where nitrogen is supplied as a carrier gas into the reaction furnace.

  After the growth of each layer of the semiconductor light emitting device 1 is finished, the crystal-grown substrate is taken out from the MOCVD apparatus, a mask is patterned on the p-type GaN contact layer 16, and the n-type GaN foundation layer 13 is formed by etching. Expose part. Thereafter, an n-side contact electrode and a pad electrode are formed on the exposed surface of the n-type GaN foundation layer 13, and a transparent electrode and a pad electrode are formed on the p-type GaN contact layer 16. Further, the back surface of the sapphire substrate 10 is polished and then diced to divide the element into chips, thereby obtaining the semiconductor light emitting device 1.

  FIG. 4 is a graph showing the film thickness and relative light emission intensity of the last barrier layer 14c of the example of the present embodiment and the conventional example. An example in which the growth of the last barrier layer 14c was interrupted after the growth of the last barrier layer 14c and the temperature was raised and the temperature was raised was plotted with ▲ in the graph. Is plotted with ◆.

  The film thickness of the last barrier layer 14c in the conventional example is 12 nm, and in each example, the growth of the last barrier layer 14c is continued in the temperature rising growth process after 12 nm growth in the constant temperature growth process as in the conventional example. The film thickness of the obtained last barrier layer 14c was 20 nm, 25 nm, and 30 nm, respectively. As shown in FIG. 4, in the example, the light emission intensity is 1.37 times that of the conventional example on average, indicating that the light emission efficiency is improved.

  In the semiconductor light emitting device 1, the electron blocking layer 15 doped with Mg is formed on the last barrier layer 14c, and Mg, which is an impurity in the electron blocking layer 15, is heated on the light emitting layer 14 side by heating or the like in a later process. Will spread. If this Mg diffuses to the inside of the light emitting layer 14 and reaches the well layer 14b, the multiple quantum well structure is disturbed, the crystal quality is lowered, and the light emission efficiency is lowered.

  However, in the present embodiment, since the last barrier layer 14c is thicker than the other barrier layers 14a, even if Mg in the electron block layer 15 diffuses, the diffusion of Mg inside the last barrier layer 14c can be stopped. it can. That is, a diffusion region in which Mg is diffused is formed on the electron blocking layer 15 side of the last barrier layer 14c, and a non-diffusion region in which Mg does not reach is formed on the well layer 14b side. Thereby, it can prevent that the impurity of the electron block layer 15 reaches | attains to the well layer 14b, and luminous efficiency falls.

  In the present embodiment, the last barrier layer 14c is grown in the constant temperature growth process having the same thickness as the other barrier layers 14a. However, the film thickness of the other barrier layer 14a is grown in the constant temperature growth process. Further, the growth of the last barrier layer 14c may be continued in the temperature rising growth process to increase the thickness.

  In the present embodiment, since the growth of the last barrier layer 14c is continued even during the temperature increase in the temperature increase growth step, the interface between the last barrier layer 14c and the electron block layer 15 is not deteriorated, and the crystal quality is maintained and the light emission efficiency is maintained. Can be improved. The film thickness of the last barrier layer 14c is thicker than that of the other barrier layers 14a, and is about 1.5 to 3 times that of the barrier layer 14a. As a result, even if Mg, which is a p-type impurity doped in the electron blocking layer 15, is thermally diffused in a later step, the diffusion can be stopped inside the last barrier layer 14c, so that the multiple quantum well structure of the light emitting layer 14 can be achieved. The light emission efficiency can be improved by suppressing the influence of impurity diffusion.

(Second Embodiment)
Next, a second embodiment of the present invention will be described with reference to FIG. This embodiment is different from the first embodiment in that the growth of the last barrier layer 14c is continued even after the temperature rising growth step, and a duplicate description is omitted. FIG. 5 is a timing chart showing the growth process from the last barrier layer 14c to the p-type GaN contact layer 16 in the present embodiment.

  As in the first embodiment, five periods of the GaN buffer layer 11, the GaN foundation layer 12, the n-type GaN foundation layer 13, the barrier layer 14a and the well layer 14b are grown, and a part of the last barrier layer 14c is formed in the constant temperature growth process. A GaN layer is formed with a thickness of 12 nm.

  Next, the growth of the last barrier layer 14c is continued while raising the substrate temperature from 800 ° C. to 900 ° C. in the temperature raising growth step. Further, even when the substrate temperature reaches 900 ° C., the supply of the carrier gas and the raw material gas is continued, and the growth of the last barrier layer 14c is continued at the same temperature as the growth of the electron block layer 15 as a subsequent process. The barrier layer 14c is thickened.

  Thereafter, the electron block layer 15 and the p-type GaN contact layer 16 are grown in the same manner as in the first embodiment, and the etching, n-side electrode formation, p-side electrode formation, and dicing steps up to the n-type GaN foundation layer 13 are performed. Then, the semiconductor light emitting device 1 is obtained.

  Also in this embodiment, since the growth of the last barrier layer 14c is continued even during the temperature rise in the temperature rise growth step, the interface between the last barrier layer 14c and the electron block layer 15 is not deteriorated, and the crystal quality is maintained and the light emission efficiency is maintained. Can be improved. Further, by continuing the growth of the last barrier layer 14c even after the temperature rising growth step, the last barrier layer 14c is formed thick so that the last barrier layer 14c has a thickness of about 1.5 to 3 times that of the barrier layer 14a. Form. As a result, even if Mg, which is a p-type impurity doped in the electron blocking layer 15, is thermally diffused in a later step, the diffusion can be stopped inside the last barrier layer 14c, so that the multiple quantum well structure of the light emitting layer 14 can be achieved. The light emission efficiency can be improved by suppressing the influence of impurity diffusion.

(Third embodiment)
In the first and second embodiments, the last barrier layer 14c is made of GaN and the electron block layer 15 is made of AlGaN. However, both are made of AlGaN having different Al compositions, and the band gap of the electron block layer 15 is larger than that of the last barrier layer 14c. It is good also as a big structure. Also, other material systems may be multi-component materials including Al, In, B, and Ga.

  Furthermore, the present invention is not limited to the nitride-based semiconductor material, and can be applied to other semiconductor material systems, for example, an oxide-based semiconductor material such as ZnO. In the case of an oxide-based semiconductor material, ZnO can be used as the well layer, and MgZnO can be used as the barrier layer and the electron block layer.

  Regardless of the material system, the growth of the last barrier layer 14c is continued even during the temperature rise in the temperature rise growth step, so that the interface between the last barrier layer 14c and the electron block layer 15 is not deteriorated and the crystal quality is maintained. Thus, the luminous efficiency can be improved. Further, by continuing the growth of the last barrier layer 14c even after the temperature rising growth step, the last barrier layer 14c is formed thick so that the last barrier layer 14c has a thickness of about 1.5 to 3 times that of the barrier layer 14a. Form. As a result, even if Mg, which is a p-type impurity doped in the electron blocking layer 15, is thermally diffused in a later step, the diffusion can be stopped inside the last barrier layer 14c, so that the multiple quantum well structure of the light emitting layer 14 can be achieved. The light emission efficiency can be improved by suppressing the influence of impurity diffusion.

  The present invention is not limited to the above-described embodiments, and various modifications are possible within the scope shown in the claims, and embodiments obtained by appropriately combining technical means disclosed in different embodiments. Is also included in the technical scope of the present invention.

DESCRIPTION OF SYMBOLS 1 ... Semiconductor light emitting element 10 ... Sapphire substrate 11 ... GaN buffer layer 12 ... GaN base layer 13 ... n-type GaN base layer 14 ... Light emitting layer 14a ... Barrier layer 14b ... Well layer 14c ... Last barrier layer 15 ... Electron block layer 16 ... p-type GaN contact layer

Claims (7)

A semiconductor light emitting device comprising a multi-quantum well active layer in which barrier layers and well layers are alternately stacked, and an electron block layer formed on the multi-quantum well active layer,
The last barrier layer, which is the uppermost layer among the barrier layers, is thicker than the other barrier layers, and has a diffusion region in which impurities from the electron blocking layer are diffused and impurities from the electron blocking layer reach. And a non-diffusing region. The semiconductor light emitting device according to claim 1,
The thickness of the last barrier layer is 1.5 to 3 times the thickness of the other barrier layer. The semiconductor light-emitting device according to claim 1 or 2,
A film thickness of the last barrier layer ranges from 20 nm to 30 nm. A method of manufacturing a semiconductor light emitting device, comprising: growing a multiple quantum well active layer in which barrier layers and well layers are alternately stacked; and growing an electron block layer on the multiple quantum well active layer,
The step of growing the last barrier layer, the uppermost layer among the barrier layers, includes a constant temperature growth step of growing crystals under the same temperature conditions as the other barrier layers, and a crystal growth while increasing the growth temperature after the constant temperature growth step. And a temperature rising growth process for continuing the process. It is a manufacturing method of the semiconductor light emitting element according to claim 4,
The method of manufacturing a semiconductor light emitting device, wherein the film thickness of the last barrier layer is larger than the film thickness of the other barrier layer. It is a manufacturing method of the semiconductor light emitting element according to claim 4 or 5,
The method of manufacturing a semiconductor light emitting element, wherein the film thickness of the last barrier layer grown in the constant temperature growth step is equal to or greater than the film thickness of the other barrier layer. A method of manufacturing a semiconductor light emitting device according to any one of claims 4 to 6,
During and after the growth of the electron blocking layer, diffusion of impurities from the electron blocking layer to the last barrier layer occurs, and a diffusion region in which impurities from the electron blocking layer are diffused into the last barrier layer, and the electrons A method of manufacturing a semiconductor light emitting element, comprising forming a non-diffusion region to which impurities from a block layer have not reached.

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