JP2017098530A - ウェハキャップ型充電式電源 - Google Patents
ウェハキャップ型充電式電源 Download PDFInfo
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- JP2017098530A JP2017098530A JP2016173602A JP2016173602A JP2017098530A JP 2017098530 A JP2017098530 A JP 2017098530A JP 2016173602 A JP2016173602 A JP 2016173602A JP 2016173602 A JP2016173602 A JP 2016173602A JP 2017098530 A JP2017098530 A JP 2017098530A
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- wafer
- rechargeable power
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- 238000007789 sealing Methods 0.000 claims abstract description 5
- 239000000463 material Substances 0.000 claims description 33
- 238000004519 manufacturing process Methods 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 24
- 239000002608 ionic liquid Substances 0.000 claims description 4
- 239000011368 organic material Substances 0.000 claims description 4
- 229910000679 solder Inorganic materials 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 description 17
- 239000002184 metal Substances 0.000 description 17
- 239000000758 substrate Substances 0.000 description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 9
- 238000005530 etching Methods 0.000 description 8
- 230000000873 masking effect Effects 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- IQQRAVYLUAZUGX-UHFFFAOYSA-N 1-butyl-3-methylimidazolium Chemical compound CCCCN1C=C[N+](C)=C1 IQQRAVYLUAZUGX-UHFFFAOYSA-N 0.000 description 4
- 238000010137 moulding (plastic) Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 229910021393 carbon nanotube Inorganic materials 0.000 description 3
- 239000002041 carbon nanotube Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000000593 degrading effect Effects 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910021389 graphene Inorganic materials 0.000 description 3
- 101100043929 Arabidopsis thaliana SUVH2 gene Proteins 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 101100043931 Chlamydomonas reinhardtii SUVH3 gene Proteins 0.000 description 2
- KMTRUDSVKNLOMY-UHFFFAOYSA-N Ethylene carbonate Chemical compound O=C1OCCO1 KMTRUDSVKNLOMY-UHFFFAOYSA-N 0.000 description 2
- 101150057295 SET3 gene Proteins 0.000 description 2
- 229910001128 Sn alloy Inorganic materials 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- JWVAUCBYEDDGAD-UHFFFAOYSA-N bismuth tin Chemical compound [Sn].[Bi] JWVAUCBYEDDGAD-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- IEJIGPNLZYLLBP-UHFFFAOYSA-N dimethyl carbonate Chemical compound COC(=O)OC IEJIGPNLZYLLBP-UHFFFAOYSA-N 0.000 description 2
- 238000004880 explosion Methods 0.000 description 2
- 150000003949 imides Chemical class 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 238000004382 potting Methods 0.000 description 2
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 description 2
- 125000001889 triflyl group Chemical group FC(F)(F)S(*)(=O)=O 0.000 description 2
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- DKCRDQKHMMPWPG-UHFFFAOYSA-N 3-methylpiperidine-2,6-dione Chemical compound CC1CCC(=O)NC1=O DKCRDQKHMMPWPG-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- BLODSRKENWXTLO-UHFFFAOYSA-N bis(trifluoromethylsulfonyl)azanide;triethylsulfanium Chemical compound CC[S+](CC)CC.FC(F)(F)S(=O)(=O)[N-]S(=O)(=O)C(F)(F)F BLODSRKENWXTLO-UHFFFAOYSA-N 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- ZUZLIXGTXQBUDC-UHFFFAOYSA-N methyltrioctylammonium Chemical compound CCCCCCCC[N+](C)(CCCCCCCC)CCCCCCCC ZUZLIXGTXQBUDC-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- WCZKTXKOKMXREO-UHFFFAOYSA-N triethylsulfanium Chemical compound CC[S+](CC)CC WCZKTXKOKMXREO-UHFFFAOYSA-N 0.000 description 1
- LAGQNGWYNLUQRI-UHFFFAOYSA-N trioctylmethylammonium bis(trifluoromethylsulfonyl)imide Chemical compound FC(F)(F)S(=O)(=O)[N-]S(=O)(=O)C(F)(F)F.CCCCCCCC[N+](C)(CCCCCCCC)CCCCCCCC LAGQNGWYNLUQRI-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/22—Electrodes
- H01G11/26—Electrodes characterised by their structure, e.g. multi-layered, porosity or surface features
- H01G11/28—Electrodes characterised by their structure, e.g. multi-layered, porosity or surface features arranged or disposed on a current collector; Layers or phases between electrodes and current collectors, e.g. adhesives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/22—Electrodes
- H01G11/26—Electrodes characterised by their structure, e.g. multi-layered, porosity or surface features
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/54—Electrolytes
- H01G11/56—Solid electrolytes, e.g. gels; Additives therein
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/54—Electrolytes
- H01G11/58—Liquid electrolytes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/54—Electrolytes
- H01G11/58—Liquid electrolytes
- H01G11/60—Liquid electrolytes characterised by the solvent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/54—Electrolytes
- H01G11/58—Liquid electrolytes
- H01G11/62—Liquid electrolytes characterised by the solute, e.g. salts, anions or cations therein
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/78—Cases; Housings; Encapsulations; Mountings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/84—Processes for the manufacture of hybrid or EDL capacitors, or components thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M10/00—Secondary cells; Manufacture thereof
- H01M10/04—Construction or manufacture in general
- H01M10/0436—Small-sized flat cells or batteries for portable equipment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M10/00—Secondary cells; Manufacture thereof
- H01M10/04—Construction or manufacture in general
- H01M10/0463—Cells or batteries with horizontal or inclined electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M10/00—Secondary cells; Manufacture thereof
- H01M10/42—Methods or arrangements for servicing or maintenance of secondary cells or secondary half-cells
- H01M10/425—Structural combination with electronic components, e.g. electronic circuits integrated to the outside of the casing
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/11—Printed elements for providing electric connections to or between printed circuits
- H05K1/115—Via connections; Lands around holes or via connections
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
- H05K1/181—Printed circuits structurally associated with non-printed electric components associated with surface mounted components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/22—Electrodes
- H01G11/30—Electrodes characterised by their material
- H01G11/46—Metal oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M2220/00—Batteries for particular applications
- H01M2220/30—Batteries in portable systems, e.g. mobile phone, laptop
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M6/00—Primary cells; Manufacture thereof
- H01M6/40—Printed batteries, e.g. thin film batteries
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10007—Types of components
- H05K2201/10015—Non-printed capacitor
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10007—Types of components
- H05K2201/10037—Printed or non-printed battery
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10227—Other objects, e.g. metallic pieces
- H05K2201/10234—Metallic balls
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- General Chemical & Material Sciences (AREA)
- Secondary Cells (AREA)
- Electric Double-Layer Capacitors Or The Like (AREA)
- Ceramic Capacitors (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Sealing Battery Cases Or Jackets (AREA)
- Battery Mounting, Suspending (AREA)
Abstract
Description
Claims (15)
- デバイスであって、
デバイスウェハと、
前記デバイスウェハの表面上に配置される充電式電源であって、アノード構成要素、カソード構成要素、および電解質構成要素を含む、充電式電源と、
前記充電式電源を封止するキャッピングウェハと、を備える、デバイス。 - 前記充電式電源と前記キャッピングウェハとの間に形成されるキャビティ内に提供される不活性ガスをさらに備える、請求項1に記載のデバイス。
- 前記充電式電源と前記キャッピングウェハとの間に形成されるキャビティ内に提供される真空をさらに備える、請求項1に記載のデバイス。
- 前記キャッピングウェハが、200℃未満の温度で、結合材料により前記充電式電源の上に取り付けられる、請求項1に記載のデバイス。
- 前記電解質構成要素が、有機材料を含む、請求項1に記載のデバイス。
- 前記電解質構成要素が、イオン液体材料を含む、請求項1に記載のデバイス。
- 前記カソード構成要素が前記デバイスウェハ上の第1の集電体上に形成され、前記アノード構成要素が前記デバイスウェハ上の第2の集電体上に形成され、かつ前記電解質構成要素が前記カソード構成要素および前記アノード構成要素上に形成される、請求項1に記載のデバイス。
- 前記カソード構成要素およびアノード構成要素が、同じ水平面に実質的に形成される、請求項7に記載のデバイス。
- 回路であって、
回路基板と、
前記回路基板上に載置されるデバイスと、を備える回路であって、前記デバイスが、
デバイスウェハと、
前記デバイスウェハの表面上に配置される充電式電源と、
前記充電式電源と前記デバイスウェハとの間にキャビティを形成する、前記充電式電源の上に取り付けられるキャッピングウェハと、を備える、回路。 - 前記デバイスが、はんだボールにより前記回路基板上に直接載置される、請求項9に記載の回路。
- 前記デバイスが、スルーホールビアにより前記回路基板上に直接載置される、請求項9に記載の回路。
- 前記回路が、前記回路上に載置される複数のデバイスをさらに備え、前記デバイスが、前記複数のデバイスのうちの少なくとも1つに電気接続される、請求項9に記載の回路。
- 前記キャビティが、不活性ガスで充填される、請求項9に記載の回路。
- デバイスを製造する方法であって、
上部ウェハおよびデバイスウェハを提供することと、
前記デバイスウェハの表面上に充電式電源を形成することと、
前記上部ウェハからキャッピングウェハを形成することと、
前記充電式電源の上に前記キャッピングウェハを取り付けて、前記充電式電源を封止することと、を含む、方法。 - 前記キャッピングウェハが、200℃未満の温度で、結合材料により前記充電式電源の上に取り付けられる、請求項14に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/861,725 US10446331B2 (en) | 2015-09-22 | 2015-09-22 | Wafer-capped rechargeable power source |
US14/861,725 | 2015-09-22 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018127433A Division JP2018195585A (ja) | 2015-09-22 | 2018-07-04 | ウェハキャップ型充電式電源 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2017098530A true JP2017098530A (ja) | 2017-06-01 |
Family
ID=58283084
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016173602A Pending JP2017098530A (ja) | 2015-09-22 | 2016-09-06 | ウェハキャップ型充電式電源 |
JP2018127433A Pending JP2018195585A (ja) | 2015-09-22 | 2018-07-04 | ウェハキャップ型充電式電源 |
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Application Number | Title | Priority Date | Filing Date |
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JP2018127433A Pending JP2018195585A (ja) | 2015-09-22 | 2018-07-04 | ウェハキャップ型充電式電源 |
Country Status (2)
Country | Link |
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US (1) | US10446331B2 (ja) |
JP (2) | JP2017098530A (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3190421B1 (en) | 2016-01-07 | 2019-05-22 | Analog Devices, Inc. | Two- or three-axis angular accelerometer |
US10732198B2 (en) | 2017-08-09 | 2020-08-04 | Analog Devices, Inc. | Integrated linear and angular MEMS accelerometers |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10284130A (ja) * | 1997-04-04 | 1998-10-23 | Nec Corp | 半導体基板搭載型二次電池 |
JP2001076710A (ja) * | 1999-09-07 | 2001-03-23 | Matsushita Electric Ind Co Ltd | 二次電池及びそれを用いた電気回路基板 |
JP2004235440A (ja) * | 2003-01-30 | 2004-08-19 | Mitsubishi Electric Corp | マイクロパッケージとその製造方法 |
JP2005506714A (ja) * | 2001-10-22 | 2005-03-03 | コミサリア、ア、レネルジ、アトミク | 電源と電源保護手段とを備えたマイクロまたはナノ電子部品 |
JP2006515952A (ja) * | 2003-01-02 | 2006-06-08 | シンベット・コーポレイション | ソリッドステートのバッテリー給電の装置と製法 |
JP2007317663A (ja) * | 2006-05-24 | 2007-12-06 | Commiss Energ Atom | エネルギー回復と貯蔵機能を結合する一体化されたマイクロ部品 |
JP2009513025A (ja) * | 2005-12-05 | 2009-03-26 | インダストリー−アカデミック コーオペレーション ファンデーション キョンサン ナショナル ユニバーシティ | ウェーハ裏面に電源供給装置が内蔵した半導体用シリコンウェーハ |
JP2010171239A (ja) * | 2009-01-23 | 2010-08-05 | Kyocera Kinseki Corp | 電子デバイス及び電子デバイスの製造方法 |
JP2010192874A (ja) * | 2009-01-21 | 2010-09-02 | Seiko Instruments Inc | 電気化学セルおよび電気化学セルの製造方法 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5338625A (en) * | 1992-07-29 | 1994-08-16 | Martin Marietta Energy Systems, Inc. | Thin film battery and method for making same |
US5561004A (en) | 1994-02-25 | 1996-10-01 | Bates; John B. | Packaging material for thin film lithium batteries |
US5591679A (en) | 1995-04-12 | 1997-01-07 | Sensonor A/S | Sealed cavity arrangement method |
US5604160A (en) | 1996-07-29 | 1997-02-18 | Motorola, Inc. | Method for packaging semiconductor devices |
US5798557A (en) | 1996-08-29 | 1998-08-25 | Harris Corporation | Lid wafer bond packaging and micromachining |
US6962613B2 (en) * | 2000-03-24 | 2005-11-08 | Cymbet Corporation | Low-temperature fabrication of thin-film energy-storage devices |
US8431264B2 (en) * | 2002-08-09 | 2013-04-30 | Infinite Power Solutions, Inc. | Hybrid thin-film battery |
JP2005023718A (ja) * | 2003-07-01 | 2005-01-27 | Komatsu Ltd | 建設機械 |
US7524577B2 (en) * | 2005-09-06 | 2009-04-28 | Oak Ridge Micro-Energy, Inc. | Long life thin film battery and method therefor |
US20080000349A1 (en) * | 2006-06-28 | 2008-01-03 | Pape Robert J | Air filter monitor |
KR100831405B1 (ko) | 2006-10-02 | 2008-05-21 | (주) 파이오닉스 | 웨이퍼 본딩 패키징 방법 |
FR2939363B1 (fr) * | 2008-12-05 | 2011-11-11 | Michelin Soc Tech | Etat de surface renouvele d'une bande de roulement de pneu |
US8343806B2 (en) | 2009-03-05 | 2013-01-01 | Raytheon Company | Hermetic packaging of integrated circuit components |
EP2471129B1 (en) * | 2009-08-27 | 2016-11-16 | Commonwealth Scientific and Industrial Research Organisation | Electrical storage device and electrode thereof |
US8724339B2 (en) * | 2009-12-01 | 2014-05-13 | Apple Inc. | Compact media player |
US9887429B2 (en) * | 2011-12-21 | 2018-02-06 | Front Edge Technology Inc. | Laminated lithium battery |
BR112014018125A8 (pt) * | 2012-01-27 | 2017-07-11 | Bp Exploration Operating Co Ltd | Método e sistema de posicionamento de poço |
EP3019442A4 (en) * | 2013-07-08 | 2017-01-25 | Motion Engine Inc. | Mems device and method of manufacturing |
US9646774B2 (en) * | 2014-06-05 | 2017-05-09 | Trion Energy Solutions Corp. | Power wafer |
-
2015
- 2015-09-22 US US14/861,725 patent/US10446331B2/en active Active
-
2016
- 2016-09-06 JP JP2016173602A patent/JP2017098530A/ja active Pending
-
2018
- 2018-07-04 JP JP2018127433A patent/JP2018195585A/ja active Pending
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10284130A (ja) * | 1997-04-04 | 1998-10-23 | Nec Corp | 半導体基板搭載型二次電池 |
JP2001076710A (ja) * | 1999-09-07 | 2001-03-23 | Matsushita Electric Ind Co Ltd | 二次電池及びそれを用いた電気回路基板 |
JP2005506714A (ja) * | 2001-10-22 | 2005-03-03 | コミサリア、ア、レネルジ、アトミク | 電源と電源保護手段とを備えたマイクロまたはナノ電子部品 |
JP2006515952A (ja) * | 2003-01-02 | 2006-06-08 | シンベット・コーポレイション | ソリッドステートのバッテリー給電の装置と製法 |
JP2004235440A (ja) * | 2003-01-30 | 2004-08-19 | Mitsubishi Electric Corp | マイクロパッケージとその製造方法 |
JP2009513025A (ja) * | 2005-12-05 | 2009-03-26 | インダストリー−アカデミック コーオペレーション ファンデーション キョンサン ナショナル ユニバーシティ | ウェーハ裏面に電源供給装置が内蔵した半導体用シリコンウェーハ |
JP2007317663A (ja) * | 2006-05-24 | 2007-12-06 | Commiss Energ Atom | エネルギー回復と貯蔵機能を結合する一体化されたマイクロ部品 |
JP2010192874A (ja) * | 2009-01-21 | 2010-09-02 | Seiko Instruments Inc | 電気化学セルおよび電気化学セルの製造方法 |
JP2010171239A (ja) * | 2009-01-23 | 2010-08-05 | Kyocera Kinseki Corp | 電子デバイス及び電子デバイスの製造方法 |
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