JP2017097348A - 量子ドットを含む層を製造する方法 - Google Patents
量子ドットを含む層を製造する方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 56
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- 229920002120 photoresistant polymer Polymers 0.000 claims description 10
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 6
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- 229910018503 SF6 Inorganic materials 0.000 claims description 3
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 claims description 3
- 229960000909 sulfur hexafluoride Drugs 0.000 claims description 3
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 21
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- AQCDIIAORKRFCD-UHFFFAOYSA-N cadmium selenide Chemical compound [Cd]=[Se] AQCDIIAORKRFCD-UHFFFAOYSA-N 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 3
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
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- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
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- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
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Abstract
【解決手段】量子ドットを含んで、量子ドットが活性である第1の領域及び量子ドットが非活性である第2の領域を有する層を製造する方法は、a) 量子ドットを含む第1の層を支持体上に成膜する工程、b) 第1の層上に第2の層を成膜する工程、c) 第1の領域及び第2の領域を画定するマスクを介して第2の層を光に曝し、その後、第2の層を現像して第2の領域に対向する第2の層を除去して、第1の領域に対向する第2の層を保持する工程、及びd) 第1の層を除去せずに、第1の領域に対向する第2の層を除去する工程を有する。
【選択図】図1C
Description
103 層,第1の層
103’ 別の層,第3の層
103a,103a’ 第1の領域
103b,103b’ 第2の領域
105 第2の層
107 マスク
Claims (15)
- 量子ドットを含んで、該量子ドットが活性である第1の領域及び前記量子ドットが非活性である第2の領域を有する層を製造する方法であって、
a) 量子ドットを含む第1の層を支持体上に成膜する工程、
b) 前記第1の層上に第2の層を成膜する工程、
c) 平面視で前記第1の領域及び前記第2の領域を画定するマスクを介して前記第2の層を光に曝し、その後、前記第2の層を現像して前記第2の領域に対向する前記第2の層を除去して、前記第1の領域に対向する前記第2の層を保持する工程、及び
d) 前記第1の層を除去せずに、前記第1の領域に対向する前記第2の層を除去する工程
を有することを特徴とする方法。 - 前記第1の層及び前記第2の層はレジストであることを特徴とする請求項1に記載の方法。
- 前記第1の層は、ポジ型レジスト及びネガ型レジストの一方であり、前記第2の層は前記ポジ型レジスト及びネガ型レジストの他方であることを特徴とする請求項2に記載の方法。
- 前記第1の層はネガ型レジストであり、前記第2の層はポジ型レジストであることを特徴とする請求項1乃至3のいずれか一項に記載の方法。
- 前記第1の層はSU8 タイプのレジストであり、前記第2の層はTELRタイプのレジストであることを特徴とする請求項1乃至4のいずれか一項に記載の方法。
- 前記第2の層を成膜する前に前記第1の層を光に曝す工程を有さないことを特徴とする請求項1乃至5のいずれか一項に記載の方法。
- 前記第2の層を現像する前記工程で、前記第2の層をTMAHに基づく溶液に浸すことを特徴とする請求項1乃至6のいずれか一項に記載の方法。
- 前記第1の層に含まれる量子ドットは、CdSe/ZnSタイプの量子ドットであることを特徴とする請求項1乃至7のいずれか一項に記載の方法。
- 前記工程d)で、前記第2の層を酸素プラズマエッチングによって除去することを特徴とする請求項1乃至8のいずれか一項に記載の方法。
- 前記工程d)の後、前記第1の層の上面部分をエッチングする工程を更に有することを特徴とする請求項1乃至9のいずれか一項に記載の方法。
- 前記第1の層の上面部分をエッチングする前記工程を、酸素及び六フッ化硫黄のプラズマエッチングによって行うことを特徴とする請求項10に記載の方法。
- 前記製造された層上で前記工程a)、前記工程b)、前記工程c)及び前記工程d)を繰り返し、量子ドットを含んで、該量子ドットが活性である第1の領域及び前記量子ドットが非活性である第2の領域を有する別の層を前記製造された層上に形成することを特徴とする請求項1乃至11のいずれか一項に記載の方法。
- 前記別の層の第1の領域を前記製造された層の第2の領域に対向して配置し、前記別の層の第2の領域を前記製造された層の第1の領域に対向して配置することを特徴とする請求項12に記載の方法。
- 光源を備えており、請求項1乃至11のいずれか一項に記載の方法によって製造された量子ドットを含む層を前記光源に対向して更に備えていることを特徴とするデバイス。
- 光源を備えており、請求項12又は13に記載の方法によって製造された量子ドットを含む層及び量子ドットを含む別の層の積層体を前記光源に対向して更に備えていることを特徴とするデバイス。
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FR1561047A FR3043838B1 (fr) | 2015-11-17 | 2015-11-17 | Procede de fabrication d'une couche contenant des boites quantiques |
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WO2022118415A1 (ja) * | 2020-12-03 | 2022-06-09 | シャープ株式会社 | 発光素子の製造方法、発光素子 |
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US20220158108A1 (en) * | 2019-02-27 | 2022-05-19 | Sharp Kabushiki Kaisha | Light-emitting element and display device using light-emitting element |
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CN110764175B (zh) * | 2019-11-27 | 2022-03-29 | 京东方科技集团股份有限公司 | 一种彩色滤光片及制备方法、显示面板及显示装置 |
CN110943075B (zh) * | 2019-11-29 | 2021-04-06 | 华中科技大学 | 一种分层分区域的远离式量子点白光led及制备方法 |
CN113219778A (zh) * | 2020-01-19 | 2021-08-06 | 明基智能科技(上海)有限公司 | 抗环境光的投影幕 |
KR102374246B1 (ko) * | 2020-07-14 | 2022-03-14 | 명지대학교 산학협력단 | 원자층증착법 전구체를 이용한 양자점 패터닝 방법 및 이를 이용하여 제조된 디스플레이 장치 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003273004A (ja) * | 2002-03-15 | 2003-09-26 | Seiko Epson Corp | 半導体装置の製造方法 |
JP2003298120A (ja) * | 2002-04-03 | 2003-10-17 | Idec Izumi Corp | 光源装置および蛍光パターンシート、それらの製造方法、ならびにそれを用いた液晶ディスプレイ装置、照明装置、掲示灯、表示灯および押しボタンスイッチ |
JP2010067979A (ja) * | 2008-09-11 | 2010-03-25 | Nikon Corp | パターン形成方法及びデバイス製造方法 |
JP2012502488A (ja) * | 2008-09-10 | 2012-01-26 | ブリッジラックス インコーポレイテッド | 多層led蛍光体 |
JP2015125197A (ja) * | 2013-12-25 | 2015-07-06 | Jsr株式会社 | 感放射線性樹脂組成物、硬化膜、発光素子および発光層の形成方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2004074173A1 (en) | 2003-02-20 | 2004-09-02 | Seoul National University Industry Foundation | Method of forming quantum layer and patterned structure by multiple dip-coating process |
KR100697511B1 (ko) * | 2003-10-21 | 2007-03-20 | 삼성전자주식회사 | 광경화성 반도체 나노결정, 반도체 나노결정 패턴형성용 조성물 및 이들을 이용한 반도체 나노결정의 패턴 형성 방법 |
KR101562022B1 (ko) * | 2009-02-02 | 2015-10-21 | 삼성디스플레이 주식회사 | 발광 다이오드 유닛, 이를 포함하는 표시 장치 및 발광 다이오드 유닛 제조 방법 |
US8952406B2 (en) * | 2012-07-12 | 2015-02-10 | Micron Technology, Inc. | Lighting devices including patterned optical components and associated devices, systems, and methods |
US9806240B2 (en) * | 2014-03-10 | 2017-10-31 | Osram Opto Semiconductors Gmbh | Wavelength conversion element, light-emitting semiconductor component including a wavelength conversion element, method for producing a wavelength conversion element and method for producing a light-emitting semiconductor component including a wavelength conversion element |
CN105355726B (zh) * | 2015-10-08 | 2018-05-01 | 深圳市华星光电技术有限公司 | 量子点层图形化的方法及量子点彩膜的制备方法 |
CN105278153B (zh) * | 2015-11-13 | 2018-03-06 | 深圳市华星光电技术有限公司 | 量子点彩膜基板的制备方法及量子点彩膜基板 |
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003273004A (ja) * | 2002-03-15 | 2003-09-26 | Seiko Epson Corp | 半導体装置の製造方法 |
JP2003298120A (ja) * | 2002-04-03 | 2003-10-17 | Idec Izumi Corp | 光源装置および蛍光パターンシート、それらの製造方法、ならびにそれを用いた液晶ディスプレイ装置、照明装置、掲示灯、表示灯および押しボタンスイッチ |
JP2012502488A (ja) * | 2008-09-10 | 2012-01-26 | ブリッジラックス インコーポレイテッド | 多層led蛍光体 |
JP2010067979A (ja) * | 2008-09-11 | 2010-03-25 | Nikon Corp | パターン形成方法及びデバイス製造方法 |
JP2015125197A (ja) * | 2013-12-25 | 2015-07-06 | Jsr株式会社 | 感放射線性樹脂組成物、硬化膜、発光素子および発光層の形成方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022054198A1 (ja) * | 2020-09-10 | 2022-03-17 | シャープ株式会社 | 表示装置の製造方法、および、表示装置 |
WO2022118415A1 (ja) * | 2020-12-03 | 2022-06-09 | シャープ株式会社 | 発光素子の製造方法、発光素子 |
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JP7099802B2 (ja) | 2022-07-12 |
KR102570754B1 (ko) | 2023-08-24 |
US10232404B2 (en) | 2019-03-19 |
FR3043838B1 (fr) | 2018-06-08 |
KR20170057843A (ko) | 2017-05-25 |
FR3043838A1 (fr) | 2017-05-19 |
EP3171415A1 (fr) | 2017-05-24 |
EP3171415B1 (fr) | 2019-03-20 |
US20170136490A1 (en) | 2017-05-18 |
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