JP2017084935A - 原子発振器 - Google Patents
原子発振器 Download PDFInfo
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- JP2017084935A JP2017084935A JP2015210822A JP2015210822A JP2017084935A JP 2017084935 A JP2017084935 A JP 2017084935A JP 2015210822 A JP2015210822 A JP 2015210822A JP 2015210822 A JP2015210822 A JP 2015210822A JP 2017084935 A JP2017084935 A JP 2017084935A
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- 230000031700 light absorption Effects 0.000 claims abstract description 60
- 150000001340 alkali metals Chemical group 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 230000001678 irradiating effect Effects 0.000 claims abstract description 3
- 238000001514 detection method Methods 0.000 claims description 50
- 238000009792 diffusion process Methods 0.000 claims description 21
- 230000008859 change Effects 0.000 claims description 13
- 230000003287 optical effect Effects 0.000 abstract description 7
- 238000010521 absorption reaction Methods 0.000 description 22
- 230000004048 modification Effects 0.000 description 17
- 238000012986 modification Methods 0.000 description 17
- 238000000034 method Methods 0.000 description 16
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 14
- 239000007789 gas Substances 0.000 description 12
- 229910052783 alkali metal Inorganic materials 0.000 description 11
- 239000000463 material Substances 0.000 description 10
- 238000009413 insulation Methods 0.000 description 9
- 238000000059 patterning Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical group [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 4
- 230000001427 coherent effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 230000005284 excitation Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 229910052701 rubidium Inorganic materials 0.000 description 2
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000009774 resonance method Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 125000004436 sodium atom Chemical group 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
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- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
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Abstract
Description
アルカリ金属原子を封入したガスセルと、
前記ガスセルに光を照射する光源と、
前記ガスセルを透過した光の光量を検出する光検出部と、
を含み、
前記光源は、
基板と、
前記基板上方に配置された第1ミラー層と、
前記第1ミラー層上方に配置された活性層と、
前記活性層上方に配置された第2ミラー層と、
前記第2ミラー層上方に配置された第1コンタクト層と、
前記第1コンタクト層上方に配置された光吸収層と、
前記光吸収層上方に配置された第2コンタクト層と、
を有する。
前記第2ミラー層と前記第1コンタクト層との間に、前記第2ミラー層よりも熱伝導率が低い断熱層が設けられていてもよい。
前記活性層および前記第1ミラー層の積層方向からみて、前記断熱層の面積は、前記第1コンタクト層の面積よりも小さくてもよい。
前記断熱層の周囲に、前記断熱層よりも熱伝導率が低い層が設けられていてもよい。
前記第2ミラー層と前記第1コンタクト層との間に、前記第2ミラー層よりも熱伝導率が高い熱拡散層が設けられていてもよい。
前記活性層に注入する電流を制御して前記光源から射出される光の出力および波長を変化させ、かつ、前記光吸収層に印加する電圧を制御して、前記光吸収層における光吸収量を変化させる制御部を含んでもよい。
前記制御部は、前記光源から射出される光の出力が一定となるように、前記光吸収層に印加する電圧を制御してもよい。
1.1. 構成
まず、本実施形態に係る原子発振器について、図面を参照しながら説明する。図1は、本実施形態に係る原子発振器1000の機能ブロック図である。
る。
次に、本実施形態に係る原子発振器1000の光源100について、図面を参照しながら説明する。図4は、本実施形態に係る光源100を模式的に示す平面図である。図5は、本実施形態に係る光源100を模式的に示す図4のV−V線断面図である。図6は、本実施形態に係る光源100を模式的に示す図4のVI−VI線断面図である。図7は、本
実施形態に係る光源100を模式的に示す図4のVII−VII線断面図である。図8は、本実施形態に係る光源100を説明するための回路図である。
0とオーミックコンタクトする層(図5に示す例では基板10)の下面に設けられている。第1電極30は、第1ミラー層20と電気的に接続されている。第1電極30としては、例えば、基板10側から、Cr層、AuGe層、Ni層、Au層の順序で積層したものを用いる。第1電極30は、活性層22に電流を注入するための一方の電極である。
Emitting Laser)を構成している。
次に、本実施形態に係る光源100の製造方法について、図面を参照しながら説明する。図10〜図12は、本実施形態に係る光源100の製造工程を模式的に示す断面図である。
形成される。パターニングは、例えば、フォトリソグラフィーおよびエッチングによって行われる。
2.1. 第1変形例
次に、本実施形態の第1変形例に係る原子発振器について、図面を参照しながら説明する。図13は、本実施形態の第1変形例に係る原子発振器2000の光源100を模式的に示す断面図ある。図14は、本実施形態の第1変形例に係る原子発振器2000の光源100を模式的に示す平面図ある。なお、便宜上、図14では、第4電極62の接触部62a、第1コンタクト層50、および断熱層40以外の部材の図示を省略している。
空間6との境界における光の散乱や損失を抑制することができる。
次に、本実施形態の第2変形例に係る原子発振器について、図面を参照しながら説明する。図16は、本実施形態の第2変形例に係る原子発振器3000の光源100を模式的に示す平面図ある。図17は、本実施形態の第2変形例に係る原子発振器3000の光源100を模式的に示す図16のXVII−XVII線断面図ある。
め、原子発振器3000では、光吸収層52が光を吸収して発熱したとしても、該熱を、熱拡散層42を介して外部に拡散させることができ、該熱が、第2ミラー層24や活性層22に到達することを抑制することができる。具体的には、光吸収層52において発生した熱は、第1コンタクト層50、熱拡散層42、接触部60a、およびパッド部60cを介して外部に放出される。
Claims (7)
- アルカリ金属原子を封入したガスセルと、
前記ガスセルに光を照射する光源と、
前記ガスセルを透過した光の光量を検出する光検出部と、
を含み、
前記光源は、
基板と、
前記基板上方に配置された第1ミラー層と、
前記第1ミラー層上方に配置された活性層と、
前記活性層上方に配置された第2ミラー層と、
前記第2ミラー層上方に配置された第1コンタクト層と、
前記第1コンタクト層上方に配置された光吸収層と、
前記光吸収層上方に配置された第2コンタクト層と、
を有する、ことを特徴とする原子発振器。 - 前記第2ミラー層と前記第1コンタクト層との間に、前記第2ミラー層よりも熱伝導率が低い断熱層が設けられている、ことを特徴とする請求項1に記載の原子発振器。
- 前記活性層および前記第1ミラー層の積層方向からみて、前記断熱層の面積は、前記第1コンタクト層の面積よりも小さい、ことを特徴とする請求項2に記載の原子発振器。
- 前記断熱層の周囲に、前記断熱層よりも熱伝導率が低い層が設けられている、ことを特徴とする請求項3に記載の原子発振器。
- 前記第2ミラー層と前記第1コンタクト層との間に、前記第2ミラー層よりも熱伝導率が高い熱拡散層が設けられている、ことを特徴とする請求項1に記載の原子発振器。
- 前記活性層に注入する電流を制御して前記光源から射出される光の出力および波長を変化させ、かつ、前記光吸収層に印加する電圧を制御して、前記光吸収層における光吸収量を変化させる制御部を含む、ことを特徴とする請求項1ないし5のいずれか1項に記載の原子発振器。
- 前記制御部は、前記光源から射出される光の出力が一定となるように、前記光吸収層に印加する電圧を制御する、ことを特徴とする請求項6に記載の原子発振器。
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JP6308037B2 (ja) | 2013-08-20 | 2018-04-11 | 株式会社リコー | ヒーター基板、アルカリ金属セルユニット及び原子発振器 |
US9705283B1 (en) * | 2014-05-20 | 2017-07-11 | University Of Central Florida Research Foundation, Inc. | Diffused channel semiconductor light sources |
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JPH0194689A (ja) * | 1987-10-06 | 1989-04-13 | Furukawa Electric Co Ltd:The | 光半導体素子 |
JP2003202529A (ja) * | 2001-03-13 | 2003-07-18 | Ricoh Co Ltd | 半導体光変調器および半導体発光装置および波長可変レーザ装置および多波長レーザ装置および光伝送システム |
JP2010232792A (ja) * | 2009-03-26 | 2010-10-14 | Seiko Epson Corp | 原子発振器 |
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JP2015079831A (ja) * | 2013-10-16 | 2015-04-23 | セイコーエプソン株式会社 | 発光装置および原子発振器 |
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