JP2017080754A - Laser processing apparatus rectifier and laser processing apparatus - Google Patents

Laser processing apparatus rectifier and laser processing apparatus Download PDF

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JP2017080754A
JP2017080754A JP2015209516A JP2015209516A JP2017080754A JP 2017080754 A JP2017080754 A JP 2017080754A JP 2015209516 A JP2015209516 A JP 2015209516A JP 2015209516 A JP2015209516 A JP 2015209516A JP 2017080754 A JP2017080754 A JP 2017080754A
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gas
laser processing
processing apparatus
transmission region
gas supply
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JP6124425B1 (en
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大介 伊藤
Daisuke Ito
大介 伊藤
純一 次田
Junichi Tsugita
純一 次田
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Japan Steel Works Ltd
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Priority to PCT/JP2016/081580 priority patent/WO2017073561A1/en
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    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
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Abstract

PROBLEM TO BE SOLVED: To stably form a local gas atmosphere in a laser processing apparatus.SOLUTION: In a laser processing apparatus that processes a workpiece having a plate surface by irradiating it with a laser beam, a stable local gas atmosphere is formed by including: a transmission area where the workpiece held by the laser processing apparatus is irradiated with a transmitted laser beam; a rectification part having a rectifying surface extending along the plate surface of the workpiece at an interval from the workpiece, from a transmission area end side to the outside of the transmission area; a gas supply part which supplies gas to an air gap between one side of the rectifying surface and the transmission area at a position separated from the transmission area; and a gas exhaust part which exhausts gas existing in an air gap between the rectifying surface and the workpiece, at the other side interposing the transmission area with the one side, to the outside of the air gap, at a position separated from the transmission area.SELECTED DRAWING: Figure 1

Description

この発明は、局所ガス雰囲気を形成して被処理体にレーザ光を照射して処理を行うことを可能にするレーザ処理装置整流装置およびレーザ処理装置に関する。   The present invention relates to a laser processing apparatus rectifier and a laser processing apparatus that can form a local gas atmosphere and perform processing by irradiating an object to be processed with laser light.

基板上のシリコン半導体膜などにレーザ光を照射してアニール処理を行う装置では、基板上で、レーザ光が照射される領域を囲む局所ガス雰囲気を形成してアニール処理を行う装置が知られている。   An apparatus that performs annealing by irradiating a laser beam to a silicon semiconductor film or the like on a substrate to form a local gas atmosphere surrounding a region irradiated with laser light on the substrate is known. Yes.

図６は、従来の装置を示す正面図である。この装置では、レーザ光５０を導入して基板７０に照射するレーザ照射筒５１に、レーザ導入窓５２が設けられている。レーザ照射筒５１の下方両側にそれぞれ水平な整流板５３、５４が設けられており、整流板５３、５４間の隙間のレーザ透過孔５１Ｂをレーザ光５０が透過する。
基板７０は、レーザ処理筒５１の下方側に位置して水平方向に移動可能な試料台６０上に載置される。この状態で、整流板５３、５４と基板７０とは所定の間隔を有している。ガス照射筒５１には、ガス供給孔５１Ａが形成されており、外部からガス照射筒５１内に所定のガスを供給することができる。ガス照射筒５１内に供給されたガスは、レーザ光透過孔５１Ｂを通して下方に吹き出され、基板７０に衝突した後、整流板５３、５４と基板７０との隙間を通って外側へと流れて局部ガス雰囲気を形成する。 FIG. 6 is a front view showing a conventional apparatus. In this apparatus, a laser introduction window 52 is provided in a laser irradiation cylinder 51 that introduces a laser beam 50 and irradiates the substrate 70. Horizontal rectifying plates 53 and 54 are respectively provided on both lower sides of the laser irradiation cylinder 51, and the laser beam 50 is transmitted through the laser transmission hole 51 </ b> B between the rectifying plates 53 and 54.
The substrate 70 is placed on a sample stage 60 that is positioned below the laser processing cylinder 51 and is movable in the horizontal direction. In this state, the current plates 53 and 54 and the substrate 70 have a predetermined distance. A gas supply hole 51A is formed in the gas irradiation cylinder 51, and a predetermined gas can be supplied into the gas irradiation cylinder 51 from the outside. The gas supplied into the gas irradiation cylinder 51 is blown downward through the laser beam transmitting hole 51B, collides with the substrate 70, and then flows to the outside through the gap between the rectifying plates 53 and 54 and the substrate 70. A gas atmosphere is formed.

また、特許文献１では、レーザビームが照射される領域を囲う雰囲気制御手段と、雰囲気制御手段内に異なるガスを供給し得る複数のガス供給手段と、このガス供給手段により供給された前記雰囲気制御手段内のガスをアニールチャンバから排気する排気調整手段とを有するレーザアニール装置が提案されている。   In Patent Document 1, atmosphere control means for enclosing a region irradiated with a laser beam, a plurality of gas supply means capable of supplying different gases into the atmosphere control means, and the atmosphere control supplied by the gas supply means There has been proposed a laser annealing apparatus having exhaust adjusting means for exhausting gas in the means from the annealing chamber.

特開２００２−２１７１２４号公報JP 2002-217124 A

特許文献１などの従来の装置では、ガス雰囲気を形成するために、レーザ光の光路付近から基板に向けてガスを継続して噴射している。しかし、レーザ照射位置にその上方からガス流を噴射するとレーザ照射位置において乱流が生じる。乱流を防ぐために、噴射するガス流を層流とする改良がなされているが、基板へのガス流衝突による乱流発生は避けられない。また、ガス流速を遅くし乱流を穏やかにすることも試みられているが、本来の目的である均一な雰囲気を形成することが困難になる。   In conventional apparatuses such as Patent Document 1, gas is continuously ejected from the vicinity of the optical path of laser light toward the substrate in order to form a gas atmosphere. However, when a gas flow is jetted from above into the laser irradiation position, turbulence occurs at the laser irradiation position. In order to prevent the turbulent flow, the gas flow to be injected has been improved to be a laminar flow. In addition, attempts have been made to slow down the gas flow rate and reduce the turbulent flow, but it is difficult to form a uniform atmosphere that is the original purpose.

ガスの乱流が生じるとガス圧力や温度の乱れが発生する。その結果、レーザ光に対する光屈折率の変化が生じレーザ照射位置におけるレーザ強度が不均一となってレーザ照射処理を均一に行えなくなる。また、レーザ光照射により、Ｓｉ半導体膜などの基板からはＳｉの蒸気や微粒子が発生すると、レーザ光路上の光屈折率の変化をもたらしたりレーザ光を遮ったりする。乱流が生じている状態や流速が著しく小さい状態では、前述の蒸気や微粒子など、基板から発生する物質をレーザ光路上から排出することは困難である。   When gas turbulence occurs, gas pressure and temperature turbulence occurs. As a result, the optical refractive index changes with respect to the laser beam, the laser intensity at the laser irradiation position becomes non-uniform, and the laser irradiation process cannot be performed uniformly. Further, when vapor or fine particles of Si are generated from a substrate such as a Si semiconductor film by laser light irradiation, the light refractive index on the laser light path is changed or the laser light is blocked. In a state where turbulent flow is generated or a state where the flow velocity is extremely small, it is difficult to discharge substances generated from the substrate such as the above-described vapor and fine particles from the laser beam path.

この発明は、上記のような従来のものの課題を解決するためになされたものであり、ガス流を被処理体に沿って流すことにより均一な雰囲気を任意のガス種により形成させることを可能にするレーザ処理装置整流装置およびレーザ処理装置を提供することを目的の一つとしている。   The present invention has been made to solve the above-described problems of the prior art, and allows a uniform atmosphere to be formed by an arbitrary gas species by flowing a gas flow along the object to be processed. It is an object of the present invention to provide a rectifying device and a laser processing device.

すなわち、本発明のレーザ処理装置整流装置のうち、第１の本発明は、
板面を有する被処理体にレーザ光を照射して処理を行うレーザ処理装置に設けられる整流装置であって、
レーザ光が透過して、前記レーザ処理装置に保持された前記被処理体に照射される透過領域の端部側に設置され、前記被処理体と間隔を置いて、前記被処理体の板面に沿って前記透過領域の外方に伸張する整流面を有する整流部と、
前記透過領域に設置された状態で前記透過領域から離隔した位置で前記整流面の一側側と前記透過領域との間の空隙にガスを供給するガス供給部と、
前記透過領域に設置された状態で前記透過領域から離隔した位置で、前記一側側と前記透過領域を挟む他側側で、前記整流面と前記被処理体の間の空隙にあるガスを前記空隙の外に排出するガス排出部と、を有することを特徴とする。 That is, of the laser processing device rectifier of the present invention, the first present invention is
A rectifier provided in a laser processing apparatus that performs processing by irradiating a target object having a plate surface with laser light,
A plate surface of the object to be processed is disposed on an end side of a transmission region through which laser light is transmitted and irradiated to the object to be processed held by the laser processing apparatus, and spaced from the object to be processed. A rectifying unit having a rectifying surface extending outward of the transmission region along the line;
A gas supply unit that supplies gas to a gap between one side of the rectifying surface and the transmission region at a position separated from the transmission region in a state of being installed in the transmission region;
The gas in the gap between the rectifying surface and the object to be processed on the one side and the other side sandwiching the transmission region at a position separated from the transmission region in a state of being installed in the transmission region. And a gas discharge portion for discharging outside the gap.

上記本発明によれば、レーザ処理装置に設置することで、透過領域と離隔した位置でガスの供給と排出とがなされ、照射領域付近で均一な流速と圧力分布が形成され、安定した局部ガス雰囲気が形成される。   According to the present invention, the gas is supplied and discharged at a position separated from the transmission region by being installed in the laser processing apparatus, a uniform flow velocity and pressure distribution is formed in the vicinity of the irradiation region, and a stable local gas is formed. An atmosphere is formed.

第２の本発明のレーザ処理装置整流装置は、前記第１の本発明において、前記整流部は、前記透過領域周縁全体に対し外方に伸張する形状を有していることを特徴とする。   The laser processing device rectifier according to the second aspect of the present invention is characterized in that, in the first aspect of the present invention, the rectifying portion has a shape extending outward with respect to the entire periphery of the transmission region.

上記本発明によれば、透過領域の周囲において安定した局部ガス雰囲気を得ることができる。   According to the present invention, a stable local gas atmosphere can be obtained around the transmission region.

第３の本発明のレーザ処理装置整流装置は、前記第１または第２の本発明において、前記整流部は、前記整流面が前記透過領域を基準にして前記ガス排出部の外側に伸張する大きさを有しており、前記ガス排出部は、前記空隙からガスを吸引するガス吸引部を有することを特徴とする。   In the laser processing device rectifier according to a third aspect of the present invention, in the first or second aspect of the present invention, the rectifying unit has a size in which the rectifying surface extends outside the gas discharge unit with respect to the transmission region. The gas discharge part has a gas suction part for sucking gas from the gap.

上記本発明によれば、ガス排出部の吸引位置よりも外側から全体雰囲気のガスを吸引して清浄化することができる。   According to the present invention, the gas in the entire atmosphere can be sucked and cleaned from the outside of the suction position of the gas discharge part.

第４の本発明のレーザ処理装置は、板面を有する被処理体にレーザ光を照射して処理を行うレーザ処理装置において、
前記レーザ光が透過して該レーザ処理装置に保持された前記被処理体に照射される透過領域と、
前記透過領域端部側から、前記被処理体と間隔を置いて前記被処理体の板面に沿って前記透過領域外方に伸張する整流面を有する整流部と、
前記透過領域から離隔した位置で前記整流面の一側側と前記透過領域との間の空隙にガスを供給するガス供給部と、
前記透過領域から離隔した位置で、前記一側側と前記透過領域を挟む他側側で前記整流面と前記被処理体の間の空隙にあるガスを前記空隙の外に排出するガス排出部と、を有することを特徴とする。 A laser processing apparatus according to a fourth aspect of the present invention is a laser processing apparatus for performing processing by irradiating a target object having a plate surface with laser light.
A transmission region through which the laser beam is transmitted and irradiated to the object to be processed held by the laser processing apparatus;
A rectification unit having a rectification surface extending outward from the transmission region along the plate surface of the object to be processed at a distance from the object to be processed from the transmission region end side;
A gas supply unit that supplies gas to a gap between one side of the rectifying surface and the transmission region at a position separated from the transmission region;
A gas discharge unit that discharges the gas in the gap between the rectifying surface and the object to be processed to the outside on the one side and the other side sandwiching the transmission area at a position separated from the transmission area; It is characterized by having.

上記本発明によれば、透過領域と離隔した位置でガスの供給と排出とがなされ、照射領域付近で均一な流速と圧力分布が形成され、安定した局部ガス雰囲気が形成される。   According to the present invention, gas is supplied and discharged at a position separated from the permeation region, a uniform flow velocity and pressure distribution are formed in the vicinity of the irradiation region, and a stable local gas atmosphere is formed.

第５の本発明のレーザ処理装置は、前記第４の本発明において、前記レーザ光が、前記被処理体上でラインビームの形状を有し、かつ前記透過領域が前記ラインビーム形状の短軸方向および長軸方向に合わせて、それぞれ短軸と長軸を有する長尺形状を有しており、
前記整流部は、前記整流面が前記透過領域の短軸側両側および長軸側両側で前記透過領域の外方に伸張していることを特徴とする。 A laser processing apparatus according to a fifth aspect of the present invention is the laser processing apparatus according to the fourth aspect, wherein the laser beam has a line beam shape on the object to be processed, and the transmission region is a short axis of the line beam shape. According to the direction and the major axis direction, each has a long shape having a minor axis and a major axis,
The rectifying unit is characterized in that the rectifying surface extends outward of the transmission region on both the short axis side and the long axis side of the transmission region.

上記本発明によれば、透過領域の長軸方向外方および短軸方向外方において安定した局部ガス雰囲気を得ることができる。   According to the present invention, a stable local gas atmosphere can be obtained on the outer side in the major axis direction and the outer side in the minor axis direction of the transmission region.

第６の本発明のレーザ処理装置は、前記第５の本発明において、前記整流面は、前記透過領域の長軸端部側においてレーザ光の長軸端部から長軸方向で外側に２０ｍｍ以上伸張していることを特徴とする。   The laser processing apparatus according to a sixth aspect of the present invention is the laser processing apparatus according to the fifth aspect, wherein the rectifying surface is 20 mm or more outward in the major axis direction from the major axis end of the laser beam on the major axis end side of the transmission region. It is characterized by stretching.

上記本発明によれば、レーザ光の長軸端部から長軸方向で外側に局部ガス雰囲気を形成して全体雰囲気の影響を排除することができる。上記伸張距離が２０ｍｍよりも小さくなると、レーザ光の長軸端部外側からの影響を受けやすくなる。なお、上記伸張距離を５０ｍｍ以上とするのが一層望ましい。   According to the present invention, it is possible to eliminate the influence of the entire atmosphere by forming a local gas atmosphere outward from the long axis end of the laser beam in the long axis direction. When the extension distance is smaller than 20 mm, the laser beam is easily affected from the outside of the long axis end portion. It is more desirable that the extension distance is 50 mm or more.

第７の本発明のレーザ処理装置は、前記第５または第６の本発明において、前記ガス供給部と前記ガス排出部が、ガスの供給および排出によって生じるガス流が、前記レーザ光が前記被処理体に照射される前記照射領域を覆うように設けられていることを特徴とする。   According to a seventh aspect of the present invention, there is provided the laser processing apparatus according to the fifth or sixth aspect of the present invention, wherein the gas supply section and the gas discharge section are configured so that the gas flow generated by the supply and discharge of the gas It is provided so that the said irradiation area | region irradiated to a process body may be covered.

上記本発明によれば、レーザ光が被処理体に照射される照射領域をガスの層流によって覆って安定した局部ガス雰囲気に置くことができる。   According to the present invention, the irradiation region where the laser beam is irradiated onto the object to be processed can be covered with the laminar flow of gas and placed in a stable local gas atmosphere.

第８の本発明のレーザ処理装置は、前記第７の本発明において、前記レーザ光が、前記被処理体上でラインビームの形状を有し、かつ前記透過領域が前記ラインビーム形状の短軸方向および長軸方向に合わせて、それぞれ短軸と長軸を有する長尺形状を有しており、
前記ガス供給部と前記ガス排出部とが、前記透過領域を挟んで、それぞれ照射面上のレーザ光の長軸幅の両端を超える長さ範囲でガスの供給および排出を行うことを特徴とする。 The laser processing apparatus according to an eighth aspect of the present invention is the laser processing apparatus according to the seventh aspect, wherein the laser beam has a line beam shape on the object to be processed, and the transmission region is a short axis of the line beam shape. According to the direction and the major axis direction, each has a long shape having a minor axis and a major axis,
The gas supply unit and the gas discharge unit supply and discharge gas in a length range exceeding both ends of the major axis width of the laser beam on the irradiation surface with the transmission region interposed therebetween, respectively. .

上記本発明によれば、ラインビーム形状のレーザ光の照射領域を確実にガス流で覆うことができる。   According to the present invention, the irradiation region of the line beam-shaped laser beam can be reliably covered with the gas flow.

第９の本発明のレーザ処理装置は、前記第４〜第８の本発明のいずれかにおいて、前記整流部は、前記透過領域を基準にして、前記一側側で前記ガス供給部によるガス供給位置の外側にさらに前記整流面が伸張し、前記他側側で前記ガス排出部まで整流面が伸張していることを特徴とする。   In the laser processing apparatus according to a ninth aspect of the present invention, in any one of the fourth to eighth aspects of the present invention, the rectifying unit supplies gas by the gas supply unit on the one side with respect to the transmission region. The rectifying surface further extends to the outside of the position, and the rectifying surface extends to the gas discharge part on the other side.

上記本発明によれば、ガス供給位置の外側にガスの層流を生じさせて全体雰囲気のガス流入を防止することができる。なお、この形態では、整流面の他側側にガス吸引部を有するものであってもよい。   According to the present invention, a laminar flow of gas can be generated outside the gas supply position to prevent gas inflow of the entire atmosphere. In addition, in this form, you may have a gas suction part in the other side of a rectification | straightening surface.

第１０の本発明のレーザ処理装置は、前記第４〜第９の本発明のいずれかにおいて、前記整流部は、前記整流面が前記透過領域を基準にして、前記ガス排出部によるガス排出位置の外側に伸張しており、前記ガス排出部は、前記空隙からガスを吸引するガス吸引部を有することを特徴とする。   The laser processing apparatus according to a tenth aspect of the present invention is the laser processing apparatus according to any one of the fourth to ninth aspects, wherein the rectifying unit has a gas discharge position by the gas discharge unit with the rectifying surface being based on the transmission region. The gas discharge part has a gas suction part for sucking gas from the gap.

上記本発明によれば、ガス吸引部によってガスの排出が効率的になされて、空隙に、より安定した層流が形成され、ガス吸引位置では、その外側のガスを層流として吸引し、浮遊物などを排除することができる。   According to the present invention, gas is efficiently discharged by the gas suction unit, and a more stable laminar flow is formed in the gap. At the gas suction position, the gas outside the region is sucked as a laminar flow and floated. Things can be excluded.

第１１の本発明のレーザ処理装置は、前記第１０の本発明において、前記ガス吸引部は、前記空隙に連通し、前記整流面と垂直な方向と前記ガス排出部の外側方向と間の方向にガスが流れるガス排出路を有していることを特徴とする。   The laser processing apparatus according to an eleventh aspect of the present invention is the laser processing apparatus according to the tenth aspect, wherein the gas suction part communicates with the gap, and is a direction between a direction perpendicular to the rectifying surface and an outer direction of the gas discharge part. It has a gas discharge passage through which gas flows.

上記本発明によれば、空隙のガスを、より効率的に吸引して排出することができる。   According to the present invention, the gas in the gap can be sucked and discharged more efficiently.

第１２の本発明のレーザ処理装置は、前記第１０または第１１の本発明において、前記整流面は、前記ガス供給部によるガス供給位置の外側に伸張している長さが、前記ガス供給位置と前記ガス排出位置との間の間隔よりも大きいことを特徴とする。   In the laser processing apparatus according to a twelfth aspect of the present invention, in the tenth or eleventh aspect of the present invention, the length of the rectifying surface extending outside the gas supply position by the gas supply unit is the gas supply position. And a gap between the gas discharge position and the gas discharge position.

上記本発明によれば、ガス供給位置の外側に十分な長さで整流面を有することで、全体雰囲気からのガスの導入を確実に排除することができる。前記伸張長さが、ガス供給位置とガス排出位置との間の間隔以下の場合、上記排除効果が十分に得られない。   According to the present invention, the introduction of gas from the entire atmosphere can be reliably eliminated by having the rectifying surface with a sufficient length outside the gas supply position. When the extension length is equal to or shorter than the interval between the gas supply position and the gas discharge position, the above-described exclusion effect cannot be obtained sufficiently.

第１３の本発明のレーザ処理装置は、前記第１２の本発明において、前記整流面は、前記ガス排出部によるガス排出位置の外側に伸張している長さが、前記ガス供給位置と前記ガス排出位置との間の間隔よりも大きいことを特徴とする。   According to a thirteenth aspect of the present invention, there is provided the laser processing apparatus according to the twelfth aspect of the present invention, wherein the length of the rectifying surface extends outside the gas discharge position by the gas discharge portion is the gas supply position and the gas. It is characterized by being larger than the interval between the discharge positions.

上記本発明によれば、ガス排出位置の外側に十分な長さで整流面を有することで、全体雰囲気からのガスの吸引を安定した層流によって確実に行うことができる。前記伸張長さが、ガス供給位置とガス排出位置との間の間隔以下の場合、上記吸引効果が安定して得られない。   According to the present invention, by having the rectifying surface with a sufficient length outside the gas discharge position, it is possible to reliably perform gas suction from the entire atmosphere by a stable laminar flow. When the extension length is equal to or smaller than the interval between the gas supply position and the gas discharge position, the suction effect cannot be stably obtained.

第１４の本発明のレーザ処理装置は、前記第４〜第１３の本発明のいずれかにおいて、前記ガス供給部は、前記空隙に連通し、前記整流面と垂直な方向と前記ガス供給部の内側方向と間の方向にガスが流れるガス供給路を有していることを特徴とする。   In the laser processing apparatus of a fourteenth aspect of the present invention, in any one of the fourth to thirteenth aspects of the present invention, the gas supply unit communicates with the gap, and is perpendicular to the rectifying surface and the gas supply unit. It has the gas supply path through which gas flows in the direction between the inner side direction.

上記本発明によれば、ガスの導入を上記空隙に安定して行うことができ、ガスの層流を早い時期に安定して形成することができる。   According to the present invention, gas can be stably introduced into the gap, and a laminar flow of gas can be stably formed at an early stage.

第１５の本発明のレーザ処理装置は、前記第４〜第１４の本発明のいずれかにおいて、前記被処理体の移動を行う移動装置を有し、
前記移動の方向を基準にして、移動方向後方側に前記ガス供給部によるガス供給位置を有し、移動方向前方側に前記ガス排出部によるガス排出位置を有していることを特徴とする。 A laser processing apparatus according to a fifteenth aspect of the present invention includes the moving device according to any one of the fourth to fourteenth aspects of the present invention, which moves the object to be processed.
With the movement direction as a reference, the gas supply position by the gas supply unit is provided on the rear side in the movement direction, and the gas discharge position by the gas discharge unit is provided on the front side in the movement direction.

上記本発明によれば、レーザ光の照射前に、被処理体の表面に局部ガス雰囲気を形成しつつ、浮遊物などを前方に送り出して排出することができ、安定した処理を行うことが可能になる。   According to the present invention, before the laser light irradiation, a floating gas or the like can be sent forward and discharged while forming a local gas atmosphere on the surface of the object to be processed, so that stable processing can be performed. become.

第１６の本発明のレーザ処理装置は、前記第１５の本発明において、前記移動装置が往復動可能になっており、移動方向に従って前記ガス供給部と前記ガス排出部の切替えが可能になっていることを特徴とする。   In the laser processing apparatus according to a sixteenth aspect of the present invention, in the fifteenth aspect of the present invention, the moving device can reciprocate, and the gas supply unit and the gas discharge unit can be switched according to the moving direction. It is characterized by being.

上記本発明によれば、被処理体の往復移動に際し、移動方向に従った方向で、ガスの供給と排出とを行うことができる。   According to the present invention, when the object to be processed is reciprocated, gas can be supplied and discharged in a direction according to the moving direction.

第１７の本発明のレーザ処理装置は、前記第４〜第１６の本発明のいずれかにおいて、前記ガス供給部によるガス供給位置が、照射位置における前記レーザ光の近接する端部側と５０ｍｍ以上の距離を有していることを特徴とする。   According to a seventeenth aspect of the present invention, there is provided the laser processing apparatus according to any one of the fourth to sixteenth aspects of the present invention, wherein the gas supply position by the gas supply section is 50 mm or more from the end portion side of the laser beam at the irradiation position. It is characterized by having the distance of.

上記本発明によれば、ガスの供給位置とレーザ光の照射位置と十分に離隔していることで、照射位置前後でガスの流れが安定した層流を形成することができ、ガスの乱流を確実に排除できる。上記距離が条件を満たしていないと、安定した層流を確実に得ることが難しくなる。なお、上記距離は、さらに１５０ｍｍ以上とするのが一層望ましい。   According to the present invention, since the gas supply position and the laser beam irradiation position are sufficiently separated, a laminar flow in which the gas flow is stable before and after the irradiation position can be formed. Can be surely eliminated. If the distance does not satisfy the conditions, it becomes difficult to reliably obtain a stable laminar flow. The distance is more preferably 150 mm or more.

第１８の本発明のレーザ処理装置は、前記第４〜第１７の本発明のいずれかにおいて、前記ガス排出部によるガス排出位置が、照射位置における前記レーザ光の近接する端部側と５０ｍｍ以上の距離を有していることを特徴とする。   In the laser processing apparatus according to an eighteenth aspect of the present invention, in any one of the fourth to seventeenth aspects of the present invention, the gas discharge position by the gas discharge section is 50 mm or more from the end portion side of the laser beam at the irradiation position. It is characterized by having the distance of.

上記本発明によれば、レーザ光の照射位置とガスの排出位置と十分に離隔していることで、照射位置前後でガスの流れが安定した層流を形成することができ、ガスの乱流を確実に排除できる。上記距離が条件を満たしていないと、安定した層流を確実に得ることが難しくなる。なお、上記距離は、さらに１５０ｍｍ以上とするのが一層望ましい。
ガス供給位置と照射位置における前記レーザ光の近接する端部側の距離と、照射位置における前記レーザ光の近接する端部側の距離とガス供給位置との距離とは、２０ｍｍ以上の距離を有しているのが望ましく、さらに、５０ｍｍ以上とするのが一層望ましい。 According to the present invention, since the laser beam irradiation position and the gas discharge position are sufficiently separated, a laminar flow with a stable gas flow before and after the irradiation position can be formed. Can be surely eliminated. If the distance does not satisfy the conditions, it becomes difficult to reliably obtain a stable laminar flow. The distance is more preferably 150 mm or more.
The distance between the gas supply position and the irradiation position near the end of the laser beam, and the distance between the irradiation position near the end of the laser beam and the gas supply position have a distance of 20 mm or more. It is desirable that the thickness is 50 mm or more.

第１９の本発明のレーザ処理装置は、前記第４〜第１８の本発明のいずれかにおいて、前記整流面と前記被処理体との間隔が１〜２０ｍｍの範囲内にあることを特徴とする。   According to a nineteenth aspect of the present invention, there is provided the laser processing apparatus according to any one of the fourth to eighteenth aspects, wherein the distance between the rectifying surface and the object to be processed is in the range of 1 to 20 mm. .

上記本発明によれば、整流面と前記被処理体との間隔を適正に設定することでガスの流れを安定した層流とすることができる。   According to the present invention, the gas flow can be made to be a stable laminar flow by appropriately setting the distance between the rectifying surface and the workpiece.

第２０の本発明のレーザ処理装置は、前記第４〜第１９の本発明のいずれかにおいて、前記被処理体に非単結晶半導体層を有し、前記レーザ光による処理が再結晶化であることを特徴とする。   A laser processing apparatus according to a twentieth aspect of the present invention is the laser processing apparatus according to any one of the fourth to nineteenth aspects, wherein the object to be processed has a non-single-crystal semiconductor layer, and the processing by the laser beam is recrystallization. It is characterized by that.

本発明によれば、レーザ光が照射される領域において、ガスが被処理体に向けて噴射されないので任意のガスによる層流を乱す要因がなくなり、ガスが被処理体の板面に沿って移動して均一な流速と圧力分布が形成され、安定した局部ガス雰囲気が形成される。さらに、これにより蒸気や微粒子など、被処理体から発生する物質を一方向に向かって排出することができ、迅速にレーザの光路上から取り除くことができる。また、蒸気や微粒子などの被照射物から発生する物質が多い場合には、流速を上げることで対応することができる。
また、層流を形成させる整流板を折り曲げることなく長く設計できるので、より整った整流を形成できる。 According to the present invention, in the region irradiated with the laser beam, the gas is not injected toward the object to be processed, so there is no factor that disturbs the laminar flow due to any gas, and the gas moves along the plate surface of the object to be processed. Thus, a uniform flow velocity and pressure distribution are formed, and a stable local gas atmosphere is formed. Further, this allows substances generated from the object to be processed, such as vapor and fine particles, to be discharged in one direction, and can be quickly removed from the optical path of the laser. In addition, when there are many substances generated from the irradiated object such as vapor and fine particles, it can be dealt with by increasing the flow velocity.
In addition, since the rectifying plate for forming the laminar flow can be designed long without being bent, more rectified rectification can be formed.

本発明の一実施形態のレーザ処理装置を示す正面図である。It is a front view which shows the laser processing apparatus of one Embodiment of this invention. 同じく、平面図である。Similarly, it is a plan view. 本発明の他の実施形態のレーザ処理装置を示す正面図である。It is a front view which shows the laser processing apparatus of other embodiment of this invention. 同じく、さらに他の実施形態のレーザ処理装置を示す正面図である。Similarly, it is a front view which shows the laser processing apparatus of other embodiment. 同じく、さらに他の実施形態のレーザ処理装置を示す正面図である。Similarly, it is a front view which shows the laser processing apparatus of other embodiment. 従来のレーザ処理装置を示す正面図である。It is a front view which shows the conventional laser processing apparatus.

（実施形態１）
以下に、本発明の一実施形態のレーザ処理装置１を添付図面に基づいて説明する。
レーザ処理装置１は、図１、２に示すように、平面方向軸（Ｘ及びＹ）を有する試料台１０が移動台１１上に設置されて図示左右方向および図示奥行き及び手前方向に移動可能に設置されており、試料台１０の上方位置に長尺なレーザ光導入窓１５が形成されている。移動台１１は、図示しない駆動装置により試料台１０を移動させるものであり、移動台１１および図示しない駆動装置は本発明の移動装置を構成する。
なお、本発明のレーザ処理装置１では、後述する基板１００を試料台１０上に載置している。しかし、本発明では、被処理体を保持できるものであればよく、載置などを行うものに限定されず、把持やガス浮上などによって、被処理体が保持されるものであってもよい。 (Embodiment 1)
Below, laser processing device 1 of one embodiment of the present invention is explained based on an accompanying drawing.
As shown in FIGS. 1 and 2, the laser processing apparatus 1 is configured such that a sample table 10 having a plane direction axis (X and Y) is installed on a moving table 11 so as to be movable in the illustrated left-right direction, illustrated depth, and forward direction. A long laser beam introduction window 15 is formed above the sample stage 10. The moving table 11 moves the sample table 10 by a driving device (not shown), and the moving table 11 and the driving device (not shown) constitute the moving device of the present invention.
In the laser processing apparatus 1 of the present invention, a substrate 100 described later is placed on the sample stage 10. However, in the present invention, any object that can hold the object to be processed may be used, and the object to be processed is not limited to the object to be placed, and the object to be processed may be held by gripping or gas floating.

レーザ光導入窓１５には、レーザ光源（図示しない）より出力されて光学系（図示しない）を経てラインビーム形状としたレーザ光２が入射されて、下方側に照射されるように構成されている。
レーザ光２としては、例えば、商品名「Ｖｙｐｅｒ」のエキシマレーザ光で、波長３０８ｎｍ、パルス周波数６００Ｈｚのものを用いることができる。ただし、本発明としては、レーザ光の種別は連続波、パルス光のいずれであってもよく、その周波数なども特に限定されるものではなく、複数のレーザ光を用いるものであってもよい。 The laser beam introduction window 15 is configured to be irradiated with a laser beam 2 output from a laser light source (not shown) and having a line beam shape through an optical system (not shown) and irradiated downward. Yes.
As the laser light 2, for example, an excimer laser light having a trade name “Vyper” having a wavelength of 308 nm and a pulse frequency of 600 Hz can be used. However, in the present invention, the type of laser light may be either continuous wave or pulsed light, and the frequency thereof is not particularly limited, and a plurality of laser lights may be used.

レーザ光２は、上記したように、Ｘ方向に短軸、Ｙ方向に長軸を有する形状を有しており、例えば、照射面上で短軸幅０．１５５〜０．４５０ｍｍ、長軸幅３７０〜１３００ｍｍを例示することができる。この実施形態では、照射面上で短軸幅０．４ｍｍ、長軸幅７５０ｍｍ、短軸方向ビームスティープネス７０μｍのビームとしている。ただし、本発明としては、レーザ光の短軸幅、長軸幅の大きさ等が限定されるものではなく、また、レーザ光のビーム断面形状がラインビームに限定されるものではない。   As described above, the laser beam 2 has a shape having a minor axis in the X direction and a major axis in the Y direction. For example, the minor axis width is 0.155 to 0.450 mm on the irradiated surface, and the major axis width is 370-1300 mm can be illustrated. In this embodiment, the beam has a minor axis width of 0.4 mm, a major axis width of 750 mm, and a minor axis direction beam steepness of 70 μm on the irradiation surface. However, the present invention is not limited to the short axis width and the long axis width of the laser light, and the beam cross-sectional shape of the laser light is not limited to the line beam.

レーザ光導入窓１５は、本発明の透過領域に相当する。レーザ光導入窓１５は、レーザ光のビーム断面形状に合わせた長尺形状とされている。レーザ光をそのまま透過させる場合、レーザ光のビーム断面形状よりも大きい長尺幅および短軸幅で形成される。また、レーザ光の短軸と長軸の一方または両方の縁部をレーザ光導入窓１５で遮蔽するようにレーザ光導入窓１５の形状を定めるものであってもよい。この実施形態では、レーザ光導入窓１５の長軸方向の大きさは、透過するレーザ光２のサイズに対し、両側でそれぞれ２５ｍｍ大きくなっている。   The laser beam introduction window 15 corresponds to the transmission region of the present invention. The laser beam introduction window 15 has a long shape that matches the beam cross-sectional shape of the laser beam. When the laser beam is transmitted as it is, it is formed with a long width and a short axis width larger than the beam cross-sectional shape of the laser beam. Further, the shape of the laser light introduction window 15 may be determined so that one or both edges of the short axis and the long axis of the laser light are shielded by the laser light introduction window 15. In this embodiment, the size of the laser beam introduction window 15 in the major axis direction is 25 mm larger on both sides than the size of the laser beam 2 to be transmitted.

試料台１０は、上記したように移動可能であり、Ｘ方向に移動することでレーザ光２を相対的に走査しつつレーザ光２を照射することを可能にする。これにより、レーザ光２は、試料台１０の移動方向とは逆の方向で基板１００に対し走査される。   The sample stage 10 is movable as described above, and by moving in the X direction, allows the laser beam 2 to be irradiated while relatively scanning the laser beam 2. Thereby, the laser beam 2 is scanned with respect to the substrate 100 in the direction opposite to the moving direction of the sample stage 10.

レーザ光導入窓１５には、その周囲に矩形状の整流板２０が設けられている。試料台１０には、５０ｎｍ厚の非晶質シリコン半導体薄膜（図示しない）を形成した基板１００が設置され、整流板２０の下面の整流面２０Ａは、前記半導体薄膜と間隔を有してＸ方向に沿って伸張している。その間隔は、１〜２０ｍｍの間隔を有するのが望ましく、この実施形態では、５ｍｍに設定されている。ただし、本発明としては、その間隔は特に限定されるものではなく、適宜の間隔を設定することも可能である。
半導体薄膜を形成した基板１００は、本発明の被処理体に相当する。ただし、本発明としては、被処理体の種別が、半導体薄膜を形成した基板に限定されるものではなく、レーザ光の照射によって適宜の処理を行う全てのものに適用が可能である。 The laser beam introduction window 15 is provided with a rectangular rectifying plate 20 around the window. A substrate 100 on which an amorphous silicon semiconductor thin film (not shown) having a thickness of 50 nm is formed is placed on the sample stage 10, and a rectifying surface 20A on the lower surface of the rectifying plate 20 is spaced apart from the semiconductor thin film in the X direction. Stretches along. The distance is desirably 1 to 20 mm, and is set to 5 mm in this embodiment. However, in the present invention, the interval is not particularly limited, and an appropriate interval can be set.
The substrate 100 on which the semiconductor thin film is formed corresponds to the object to be processed of the present invention. However, as the present invention, the type of the object to be processed is not limited to the substrate on which the semiconductor thin film is formed, and can be applied to all objects that perform appropriate processing by laser light irradiation.

整流板２０は、レーザ光２の長軸幅両端を超える幅を有しており、レーザ光２の長軸両端からそれぞれ２０ｍｍ以上伸張した幅を有しているのが望ましい。この実施形態では、レーザ光２の長軸端からそれぞれ外側に５０ｍｍ伸張した幅を有している。
また、整流板２０は、レーザ光導入窓１５に対し、−Ｘ方向側（図示左方側）に離隔した位置で上下に貫通したガス排出孔２２Ｂを有し、＋Ｘ方向側（図示右方側）に離隔した位置で上下に貫通したガス吸入孔２３Ｂを有している。ガス供給孔２２Ｂおよびガス吸入孔２３Ｂは、照射面上のレーザ光２の断面形状に従って長尺形状を有しており、その長さは、照射面上のレーザ光２の長軸両端を超える長さを有している。さらに、レーザ光導入窓１５の長軸両端を超える長さを有している。
また、ガス供給孔２２Ｂおよびガス吸引孔２３Ｂは、照射面上のレーザ光２の近接する短軸端から５０ｍｍを超える距離ｂを有しているのが望ましい。この実施形態では、１５０ｍｍの距離を有している。 The rectifying plate 20 has a width exceeding both ends of the major axis of the laser beam 2, and preferably has a width that extends 20 mm or more from both ends of the major axis of the laser beam 2. In this embodiment, the laser beam 2 has a width extending 50 mm outward from the long axis end.
The rectifying plate 20 has a gas discharge hole 22B penetrating vertically at a position separated from the laser beam introduction window 15 on the −X direction side (the left side in the drawing), and on the + X direction side (the right side in the drawing). ) And a gas suction hole 23B penetrating vertically at a position separated from each other. The gas supply hole 22B and the gas suction hole 23B have an elongated shape according to the cross-sectional shape of the laser beam 2 on the irradiation surface, and the length exceeds the lengths of both ends of the laser beam 2 on the irradiation surface. Have Further, the laser beam introduction window 15 has a length exceeding both ends of the major axis.
Further, it is desirable that the gas supply hole 22B and the gas suction hole 23B have a distance b exceeding 50 mm from the short axis end of the laser beam 2 on the irradiation surface that is close to the gas supply hole 22B. In this embodiment, it has a distance of 150 mm.

ガス供給孔２２Ｂの上端側は、整流板２０の上方に設けられたガス供給筒２２Ａに連通している。ガス供給筒２２Ａは、ガス入口を除いて封止されており、ガス入口には図示しないガス供給源に接続されている。ガス供給源では、単一あるいは２種類以上の任意の混合比からなるガスを供給することができ、被処理体の種類や処理の内容に応じてガスを変更できるようにしてもよく、処理の途中でガスの種類を変更できるようにしてもよい。
ガス供給孔２２Ｂにおけるガスの供給流量は、一定量に定めることができ、また、処理中に流量を変更できるようにしてもよい。ガスの供給流量は、例えば５０Ｌ／ｍｉｎを例示することができる。ガス供給孔２２Ｂとガス供給筒２２Ａは、ガス供給部２２を構成している。 The upper end side of the gas supply hole 22B communicates with a gas supply cylinder 22A provided above the rectifying plate 20. The gas supply cylinder 22A is sealed except for the gas inlet, and the gas inlet is connected to a gas supply source (not shown). The gas supply source can supply a gas having a single or two or more arbitrary mixing ratios, and the gas can be changed according to the type of the object to be processed and the content of the processing. You may enable it to change the kind of gas on the way.
The gas supply flow rate in the gas supply hole 22B can be set to a fixed amount, or the flow rate can be changed during processing. An example of the gas supply flow rate is 50 L / min. The gas supply hole 22 </ b> B and the gas supply cylinder 22 </ b> A constitute a gas supply unit 22.

ガス吸引孔２３Ｂの上端側は、整流板２０の上方に設けられたガス吸引筒２３Ａに連通している。ガス吸引筒２３Ａは、ガス出口を除いて封止されており、ガス出口には図示しないガス吸引装置に接続されている。ガス吸引装置では、ガス供給に合わせて動作させることができるが、ガス吸引の開始に合わせることなくガス吸引を行うものであってもよい。
ガス吸引孔２３Ｂとガス吸引筒２３Ａは、ガス吸引部２３を構成している。この実施形態では、ガス吸引部２３がガス排出部を構成する。
ガス吸引孔２３Ｂにおけるガスの吸引量は、ガス供給量に合わせて行うのが望ましい。ガスの吸引量をガスの供給量に見合う量にすることで、圧力を維持することができる。さらに、全体雰囲気に対する給気や吸引があれば、これを考慮してガスの供給量とガスの吸引量を定めて、全体における給気と吸引を合わせることができる。 The upper end side of the gas suction hole 23 </ b> B communicates with a gas suction cylinder 23 </ b> A provided above the rectifying plate 20. The gas suction cylinder 23A is sealed except for the gas outlet, and the gas outlet is connected to a gas suction device (not shown). The gas suction device can be operated in accordance with the gas supply, but may perform gas suction without matching the start of gas suction.
The gas suction hole 23 </ b> B and the gas suction cylinder 23 </ b> A constitute a gas suction unit 23. In this embodiment, the gas suction part 23 constitutes a gas discharge part.
It is desirable that the amount of gas sucked in the gas suction hole 23B is adjusted in accordance with the gas supply amount. The pressure can be maintained by adjusting the amount of gas suction to the amount of gas supply. Furthermore, if there is air supply or suction with respect to the entire atmosphere, the gas supply amount and the gas suction amount are determined in consideration of this, and the overall air supply and suction can be combined.

整流板２０は、レーザ光導入窓１５を基準にしてガス供給孔２２Ｂおよびガス吸引孔２３Ｂよりも外側に伸張しており、整流板２０の外側端部は、それぞれガス供給孔２２Ｂおよびガス吸引孔２３Ｂの外側端部から、ガス供給孔２２Ｂおよびガス吸引孔２３Ｂの内側間の距離（ａ）よりも大きな長さ（＞ａ）を有している。
上記した整流板２０、ガス供給部２２、ガス吸引部２３は、本発明の整流装置を構成する。 The rectifying plate 20 extends outward from the gas supply hole 22B and the gas suction hole 23B with reference to the laser beam introduction window 15, and the outer end portions of the rectifying plate 20 are the gas supply hole 22B and the gas suction hole, respectively. It has a length (> a) greater than the distance (a) between the gas supply hole 22B and the gas suction hole 23B from the outer end of 23B.
The rectifying plate 20, the gas supply unit 22, and the gas suction unit 23 described above constitute the rectifying device of the present invention.

なお、レーザ処理装置１は、図示しない処理室を有し、該処理室内に移動装置１１、試料台２０および整流装置を有し、処理室の外部にレーザ光の出力源や光学系を位置させたものが例示される。   The laser processing apparatus 1 has a processing chamber (not shown), and has a moving device 11, a sample stage 20, and a rectifier in the processing chamber. A laser beam output source and an optical system are located outside the processing chamber. Are illustrated.

次に、上記レーザ処理装置１の動作について説明する。
試料台１０に被処理体として、非晶質シリコン半導体薄膜を上面に設けた基板１００を載置する。
試料台１０は、移動装置１１によってＸ−Ｙ方向において初期位置に移動させる。この際に、基板１００のＹ方向における所定の領域が、レーザ光２の照射領域に重なるように、試料台１０のＹ方向の移動位置を決定し、Ｘ方向で基板１００の先端がレーザ光の照射位置にあるように移動させる。
この状態でガス供給部２２では、ガス供給筒２２Ａに所定のガスを供給し、ガス供給孔２２Ｂから所定のガス流量でガスを供給し、一方、ガス吸引部２３では、ガス供給量に合わせてガスの吸引を行う。なお、この実施形態では、ガスとして窒素などの不活性ガスを用いている。ガスの供給と吸引によって、レーザ光２の照射領域では、乱流が生じにくく層流状態になって局部ガス雰囲気が安定する。なお、処理の初期では、吸引口２３Ｂの下方に試料台１０が位置しないため、ガスの吸引力が弱くなるので、処理初期にはガス吸引部２３における吸引量を多くするようにしてもよい。 Next, the operation of the laser processing apparatus 1 will be described.
A substrate 100 on which an amorphous silicon semiconductor thin film is provided as an object to be processed is placed on the sample stage 10.
The sample stage 10 is moved to the initial position in the XY direction by the moving device 11. At this time, the movement position in the Y direction of the sample stage 10 is determined so that a predetermined region in the Y direction of the substrate 100 overlaps the irradiation region of the laser light 2, and the tip of the substrate 100 is in the X direction. Move so that it is at the irradiation position.
In this state, the gas supply unit 22 supplies a predetermined gas to the gas supply cylinder 22A and supplies a gas at a predetermined gas flow rate from the gas supply hole 22B. On the other hand, the gas suction unit 23 matches the gas supply amount. Perform gas suction. In this embodiment, an inert gas such as nitrogen is used as the gas. Due to the supply and suction of the gas, turbulent flow is unlikely to occur in the irradiation region of the laser beam 2, and the local gas atmosphere is stabilized in a laminar flow state. Since the sample stage 10 is not located below the suction port 23B in the initial stage of processing, the gas suction force is weakened. Therefore, the suction amount in the gas suction unit 23 may be increased in the initial stage of processing.

図示しないレーザ光源からは、パルス状に発振されたレーザ光２が光学系を通過して線条となったビーム（ラインビーム）となり、レーザ光導入窓１５を通して基板１００上の非晶質シリコン半導体膜の照射面上に適宜の照射エネルギー密度（例えば３７０ｍＪ・ｃｍ−２）で照射される。
試料台１０は、移動装置１１によって、所定の速度で＋Ｘ方向に移動する。これによりレーザ光２は、相対的に走査されつつ基板１００に照射される。 From a laser light source (not shown), the laser light 2 oscillated in a pulsed manner passes through the optical system to become a linear beam (line beam), and passes through the laser light introducing window 15 to form an amorphous silicon semiconductor on the substrate 100. It is illuminated with an appropriate irradiation energy density (for example, 370mJ · cm- 2) on the irradiated surface of the film.
The sample stage 10 is moved in the + X direction at a predetermined speed by the moving device 11. Thereby, the laser beam 2 is irradiated onto the substrate 100 while being relatively scanned.

また、整流板２０では、上記のようにガス供給孔２２Ｂから供給されたガスがガス吸引口２３Ｂに向けてガスの層流が生じ、安定した局部ガス雰囲気が得られる。さらに、ガス供給孔２２Ｂでは、整流面２０Ａに沿って外側に流れる層流が形成され、全体雰囲気における大気などが外方から照射領域に流入するのを防止する。さらに、レーザ光照射後も、しばらくの間は、整流面２０Ａによって良好な局所ガス雰囲気下に置かれるので、レーザアニールの作用が良好に進行して良質に結晶化がなされる。
また、ガス供給孔２２Ｂでは、整流面２０Ａに沿って両側方にもガス流が流れ、外方から大気などが照射領域に流入するのを防止する。さらに、ガス吸引孔２３Ｂでは、外方からガスが吸引され、全体雰囲気中の浮遊物などを吸引してレーザ光照射前に排除することができる。 Further, in the rectifying plate 20, the gas supplied from the gas supply hole 22B as described above generates a laminar flow of gas toward the gas suction port 23B, and a stable local gas atmosphere is obtained. Furthermore, in the gas supply hole 22B, a laminar flow that flows outward along the rectifying surface 20A is formed, and air or the like in the entire atmosphere is prevented from flowing into the irradiation region from the outside. Further, even after the laser beam irradiation, the rectifying surface 20A is placed in a good local gas atmosphere for a while, so that the laser annealing action proceeds well and crystallization is performed with good quality.
Further, in the gas supply hole 22B, a gas flow also flows on both sides along the rectifying surface 20A, thereby preventing air or the like from flowing into the irradiation region from the outside. Further, in the gas suction hole 23B, gas is sucked from the outside, and suspended matter in the entire atmosphere can be sucked and eliminated before laser light irradiation.

非晶質シリコン半導体膜は、前記レーザ光２のパルスに合わせて移動する試料台１０によって、一定の速度で＋Ｘ方向に移動しながらレーザ光２を照射することによって、レーザ光２が走査されて照射面が移動し、照射面によって非晶質シリコン半導体膜の任意の領域が再結晶化される。また、安定した局所ガス雰囲気によりレーザアニールを良好に行うことができる。   The amorphous silicon semiconductor film is scanned with the laser beam 2 by irradiating the laser beam 2 while moving in the + X direction at a constant speed by the sample stage 10 that moves in accordance with the pulse of the laser beam 2. The irradiated surface moves, and an arbitrary region of the amorphous silicon semiconductor film is recrystallized by the irradiated surface. Further, laser annealing can be favorably performed in a stable local gas atmosphere.

基板１００のＹ方向の所定の領域で処理を完了すると、移動装置１１によって試料台１０をＹ方向（図２では＋Ｙ方向）に移動させて、Ｙ方向の異なる領域に、同様の処理を行う。この際に、試料台１０を一旦、−Ｘ方向に移動させて初期位置に復帰させた後、上記と同様の処理を行ってもよく、−Ｘ方向に試料台１０を移動しつつレーザ光２を照射してもよい。逆方向に移動させる場合、そのままガス供給部２２とガス吸引部２３を使用してもよく、ガス供給部２２とガス吸引部２３の配管の切替などによって両者を切り替えて、−Ｘ方向において前方にガス吸引部が位置し、後方にガス供給部が位置するようにしてもよい。また、基板１００のＹ方向の所定の領域を処理した後、試料台１０を１８０度回転させて基板１００のＹ方向の異なる領域にレーザ光を照射するようにしてもよい。   When the processing is completed in a predetermined region in the Y direction of the substrate 100, the sample table 10 is moved in the Y direction (+ Y direction in FIG. 2) by the moving device 11, and the same processing is performed in different regions in the Y direction. At this time, after the sample stage 10 is once moved in the −X direction and returned to the initial position, the same processing as described above may be performed, and the laser beam 2 while moving the sample stage 10 in the −X direction. May be irradiated. When moving in the opposite direction, the gas supply unit 22 and the gas suction unit 23 may be used as they are, and both are switched by switching the pipes of the gas supply unit 22 and the gas suction unit 23 and forward in the −X direction. The gas suction part may be located, and the gas supply part may be located behind. Alternatively, after processing a predetermined region in the Y direction of the substrate 100, the sample stage 10 may be rotated 180 degrees to irradiate different regions in the Y direction of the substrate 100 with laser light.

なお、この実施形態では、非晶質半導体膜にレーザ光を照射して再結晶化を行ったが、他の目的でレーザ光を照射して処理を行うものに広く適用することができる。   Note that in this embodiment, recrystallization is performed by irradiating the amorphous semiconductor film with laser light, but the present invention can be widely applied to processing performed by irradiating laser light for other purposes.

（実施形態２）
次に、他の実施形態を図３に基づいて説明する。なお、上記実施形態と同一の構成については同一の符号を付してその説明を省略または簡略化する。
実施形態１では、レーザ光を基板１００に対して垂直に照射をしてレーザアニール処理を行ったが、基板１００の表面に対し、斜め方向からレーザ光を照射する構成を有するものであってもよい。
図３のレーザ処理装置１Ａでは、試料台１０のＸ方向での移動方向に対し、斜め前方に傾けたレーザ光２Ａを、レーザ光導入窓１５を通して基板１００に照射する。この実施形態２においても、安定した局所ガス雰囲気において、レーザアニール処理を行うことができる。 (Embodiment 2)
Next, another embodiment will be described with reference to FIG. In addition, about the structure same as the said embodiment, the same code | symbol is attached | subjected and the description is abbreviate | omitted or simplified.
In the first embodiment, laser annealing is performed by irradiating the laser beam perpendicularly to the substrate 100. However, even if the laser beam is irradiated from an oblique direction on the surface of the substrate 100, Good.
In the laser processing apparatus 1 </ b> A of FIG. 3, the substrate 100 is irradiated with laser light 2 </ b> A inclined obliquely forward with respect to the moving direction of the sample stage 10 in the X direction through the laser light introducing window 15. Also in the second embodiment, the laser annealing process can be performed in a stable local gas atmosphere.

（実施形態３）
上記各実施形態では、ガス吸引部を必須の構成として説明したが、ガス吸引部を有していないものとしてもよい。この実施形態３を図４に基づいて説明する。なお、上記実施形態と同一の構成については同一の符号を付してその説明を省略または簡略化する。
この実施形態のレーザ処理装置１Ｂでは、ガス排出側の長さを短くした整流板２１がレーザ光導入窓１５の周縁に設けられている。 (Embodiment 3)
In each of the above embodiments, the gas suction unit has been described as an essential configuration, but the gas suction unit may not be provided. This Embodiment 3 is demonstrated based on FIG. In addition, about the structure same as the said embodiment, the same code | symbol is attached | subjected and the description is abbreviate | omitted or simplified.
In the laser processing apparatus 1 </ b> B of this embodiment, a rectifying plate 21 with a reduced length on the gas discharge side is provided on the periphery of the laser light introduction window 15.

整流板２１の下面の整流面２１Ａは、前記実施形態と同様に、基板１００との間の間隔が５ｍｍに設定されている。また、整流板２１は、レーザ光２の長軸幅両端を超える幅を有しており、レーザ光２の長軸端から５０ｍｍ以上外側に伸張した幅を有している。
ガス供給孔２２Ｂは、照射面上のレーザ光２の断面形状に従って長尺形状を有しており、その長さは、照射面上のレーザ光２の長軸両端を超える長さを有している。ガス供給孔２２Ｂは照射面上のレーザ光２の近接する短軸端から２５０ｍｍの距離を有しており、他側側では、整流板２１における長さは、照射面上のレーザ光２の近接する短軸端から２５０ｍｍとなっている。整流板２１における他側側の端部は、ガスが排出されるガス排出部２４を構成している。 The spacing between the rectifying surface 21A on the lower surface of the rectifying plate 21 and the substrate 100 is set to 5 mm, as in the above embodiment. Further, the rectifying plate 21 has a width that exceeds both ends of the major axis width of the laser beam 2, and has a width that extends outward by 50 mm or more from the major axis end of the laser beam 2.
The gas supply hole 22B has a long shape according to the cross-sectional shape of the laser beam 2 on the irradiation surface, and the length thereof exceeds the length of both ends of the laser beam 2 on the irradiation surface. Yes. The gas supply hole 22B has a distance of 250 mm from the short axis end of the laser beam 2 close to the irradiation surface, and on the other side, the length of the rectifying plate 21 is close to the laser light 2 on the irradiation surface. It is 250 mm from the short axis end. An end portion on the other side of the rectifying plate 21 constitutes a gas discharge portion 24 from which gas is discharged.

ガス供給孔２２Ｂは、整流板２１の上方に設けられたガス供給筒２２Ａに連通している。
整流板２１は、レーザ光導入窓１５を基準にしてガス供給孔２２Ｂよりも外側に伸張しており、整流板２１の外側端部は、ガス供給孔２２Ｂの外側端部から、ガス供給孔２２Ｂから他側側の整流板２１の端部までの距離よりも大きな長さを有している。
上記した整流板２１、ガス供給部２２は、本発明の整流装置を構成する。 The gas supply hole 22 </ b> B communicates with a gas supply cylinder 22 </ b> A provided above the rectifying plate 21.
The rectifying plate 21 extends outward from the gas supply hole 22B with reference to the laser beam introduction window 15, and the outer end of the rectifying plate 21 extends from the outer end of the gas supply hole 22B to the gas supply hole 22B. It has a length larger than the distance from the end of the current plate 21 on the other side.
The rectifying plate 21 and the gas supply unit 22 described above constitute the rectifying device of the present invention.

この実施形態においても、ガス供給部２２から供給されたガスは、整流面２１Ａと基板１００との間を通ってガス排出部２４側に移動して層流となり、安定した局所ガス雰囲気を形成して良好なアニール処理を可能にする。さらに、ガス供給部２２によるガス供給位置よりも外側で、外側に向けた層流が生じ、外部の全体雰囲気からのガスなどの流入が防止される。   Also in this embodiment, the gas supplied from the gas supply unit 22 passes between the rectifying surface 21A and the substrate 100 and moves to the gas discharge unit 24 side to form a laminar flow, thereby forming a stable local gas atmosphere. Enabling good annealing. Furthermore, a laminar flow is generated outward from the gas supply position by the gas supply unit 22, and inflow of gas or the like from the entire external atmosphere is prevented.

（実施形態４）
上記各実施形態では、ガス供給を基板１００の上方から下方側に垂直に向けて供給し、ガス吸引を行う場合は、直上に吸引を行うものについて説明したが、基板１００に対し斜め方向からガスを供給し、ガス吸引を行う場合は、斜め方向に吸引するようにしてもよい。
この実施形態のレーザ処理装置１Ｃを図５に基づいて説明する。なお、上記実施形態と同一の構成については同一の符号を付してその説明を省略または簡略化する。 (Embodiment 4)
In each of the above-described embodiments, the gas supply is supplied from the upper side to the lower side of the substrate 100 in the vertical direction to perform the gas suction. May be sucked in an oblique direction.
A laser processing apparatus 1C of this embodiment will be described with reference to FIG. In addition, about the structure same as the said embodiment, the same code | symbol is attached | subjected and the description is abbreviate | omitted or simplified.

レーザ処理装置１Ｃでは、試料台１０の上方側に長尺なレーザ光導入窓１６が形成されている。レーザ光導入窓１６は、本発明の透過領域に相当する。
レーザ光導入窓１６は、レーザ光のビーム断面形状に合わせた長尺形状とされている。 レーザ光導入窓１６は、その周囲に矩形状の整流板３０が設けられている。整流板３０の下面の整流面３０Ａは、前記非晶質シリコン半導体膜と５ｍｍの間隔を有してＸ方向に沿って伸張している。 In the laser processing apparatus 1 </ b> C, a long laser beam introduction window 16 is formed above the sample stage 10. The laser beam introduction window 16 corresponds to the transmission region of the present invention.
The laser beam introduction window 16 has an elongated shape that matches the beam cross-sectional shape of the laser beam. The laser beam introduction window 16 is provided with a rectangular rectifying plate 30 around it. The rectifying surface 30A on the lower surface of the rectifying plate 30 extends along the X direction with a distance of 5 mm from the amorphous silicon semiconductor film.

整流板３０は、レーザ光２の長軸幅両端を超える幅を有しており、レーザ光２の長軸端から外側に５０ｍｍ伸張した幅を有している。
また、整流板３０は、レーザ光導入窓１５に対し、−Ｘ方向側（図示左方側）に離隔して上下に貫通したガス供給孔２２Ｃを有し、＋Ｘ方向側（図示右方側）に離隔して上下に貫通したガス吸入孔２３Ｃを有している。ガス供給孔２２Ｃおよびガス吸入孔２３Ｃは、照射面上のレーザ光２の断面形状に従って長尺形状を有しており、その長さは、照射面上のレーザ光２の長軸両端を超える長さを有している。 The rectifying plate 30 has a width that exceeds both ends of the major axis width of the laser beam 2, and has a width that extends 50 mm outward from the major axis end of the laser beam 2.
Further, the rectifying plate 30 has a gas supply hole 22 </ b> C that is vertically spaced apart from the laser beam introduction window 15 on the −X direction side (the left side in the drawing), and on the + X direction side (the right side in the drawing). And a gas suction hole 23C penetrating vertically. The gas supply hole 22C and the gas suction hole 23C have an elongated shape according to the cross-sectional shape of the laser beam 2 on the irradiation surface, and the length exceeds the lengths of both ends of the laser beam 2 on the irradiation surface. Have

ガス供給孔２２Ｃおよびガス吸引孔２３Ｃは、下端側の位置で、照射面上のレーザ光２の近接する短軸端から１５０ｍｍを超える距離を有しているのが望ましい。この実施形態では、２５０ｍｍの距離を有している。
ガス供給孔２２Ｃは、ガス導入窓１６側に傾斜した角度を有しており、整流板３０の鉛直方向に対する角度θ１として０〜６０度の角度を有しているのが望ましい。
また、ガス吸引孔２３Ｃは、ガス導入窓１６側に傾斜した角度を有しており、整流板３０の鉛直方向に対する角度θ２として０〜６０度の角度を有しているのが望ましい。 It is desirable that the gas supply hole 22C and the gas suction hole 23C have a distance of more than 150 mm from the short axis end of the laser beam 2 on the irradiation surface in the vicinity of the lower end side. In this embodiment, it has a distance of 250 mm.
The gas supply hole 22C has an angle inclined toward the gas introduction window 16, and preferably has an angle of 0 to 60 degrees as an angle θ1 with respect to the vertical direction of the rectifying plate 30.
Further, the gas suction hole 23C has an angle inclined toward the gas introduction window 16, and preferably has an angle of 0 to 60 degrees as an angle θ2 with respect to the vertical direction of the rectifying plate 30.

ガス供給孔２２Ｃは、整流板３０の上方に設けられたガス供給筒２２Ａに連通しており、ガス供給孔２２Ｃとガス供給筒２２Ａは、ガス供給部２２を構成している。
ガス吸引孔２３Ｃは、整流板３０の上方に設けられたガス吸引筒２３Ａに連通しており、ガス吸引孔２３Ｃとガス吸引筒２３Ａは、ガス吸引部２３を構成している。 The gas supply hole 22 </ b> C communicates with a gas supply cylinder 22 </ b> A provided above the rectifying plate 30, and the gas supply hole 22 </ b> C and the gas supply cylinder 22 </ b> A constitute a gas supply unit 22.
The gas suction hole 23 </ b> C communicates with a gas suction cylinder 23 </ b> A provided above the rectifying plate 30, and the gas suction hole 23 </ b> C and the gas suction cylinder 23 </ b> A constitute a gas suction unit 23.

整流板３０は、レーザ光導入窓１５を基準にしてガス供給孔２２Ｃおよびガス吸引孔２３Ｃよりも外側に伸張しており、整流板３０の外側端部は、それぞれガス供給孔２２Ｃおよびガス吸引孔２３Ｃの外側端部から、ガス供給孔２２Ｃおよびガス吸引孔２３Ｃの内側間の距離よりも大きな長さを有している。
上記した整流板３０、ガス供給部２２、ガス吸引部２３は、本発明の整流装置を構成する。 The rectifying plate 30 extends outward from the gas supply hole 22C and the gas suction hole 23C with reference to the laser beam introduction window 15, and the outer end portions of the rectifying plate 30 are the gas supply hole 22C and the gas suction hole, respectively. The distance from the outer end of 23C is greater than the distance between the gas supply hole 22C and the gas suction hole 23C.
The rectifying plate 30, the gas supply unit 22, and the gas suction unit 23 described above constitute the rectifying device of the present invention.

この実施形態では、ガス供給孔２２Ｃによってガスが斜め前方方向に導入され、整流面３０Ａとガラス基板１００との間で、より円滑に層流が形成される。
また、層流となったガスは、ガス吸引孔２３Ｃによって斜め上方側に吸引され、整流面３０Ａとガラス基板１００との間のガスが円滑に排出される効果がある。 In this embodiment, gas is introduced obliquely forward by the gas supply hole 22 </ b> C, and a laminar flow is more smoothly formed between the rectifying surface 30 </ b> A and the glass substrate 100.
Moreover, the gas which became the laminar flow is attracted | sucked diagonally upward by the gas suction hole 23C, and there exists an effect by which the gas between the rectification | straightening surface 30A and the glass substrate 100 is discharged | emitted smoothly.

以上、本発明について上記実施形態に基づいて説明を行ったが、本発明の範囲を逸脱しない限りは適宜の変更が可能である。   As described above, the present invention has been described based on the above embodiment, but appropriate modifications can be made without departing from the scope of the present invention.

１ レーザ処理装置
１Ａ レーザ処理装置
１Ｂ レーザ処理装置
１Ｃ レーザ処理装置
２ レーザ光
３ レーザ光
１０ 試料台
１１ 移動台
２０ 整流板
２０Ａ 整流面
２１ 整流板
２１Ａ 整流面
２２ ガス供給部
２２Ａ ガス供給筒
２２Ｂ ガス供給孔
２２Ｃ ガス供給孔
２３ ガス吸引部
２３Ａ ガス吸引筒
２３Ｂ ガス吸引孔
２３Ｃ ガス吸引孔
２４ ガス排出部
３０ 整流板
３０Ａ 整流面 DESCRIPTION OF SYMBOLS 1 Laser processing apparatus 1A Laser processing apparatus 1B Laser processing apparatus 1C Laser processing apparatus 2 Laser beam 3 Laser beam 10 Sample stand 11 Moving stand 20 Rectification plate 20A Rectification surface 21 Rectification plate 21A Rectification surface 22 Gas supply part 22A Gas supply cylinder 22B Gas Supply hole 22C Gas supply hole 23 Gas suction part 23A Gas suction cylinder 23B Gas suction hole 23C Gas suction hole 24 Gas discharge part 30 Rectification plate 30A Rectification surface

すなわち、本発明のレーザ処理装置整流装置のうち、第１の本発明は、
板面を有する被処理体にレーザ光を照射して処理を行うレーザ処理装置に設けられる整流装置であって、
レーザ光が透過して、前記レーザ処理装置に保持された前記被処理体に照射される透過領域の端部側に設置され、前記被処理体と間隔を置いて、前記被処理体の板面に沿って前記透過領域の外方に伸張する整流面を有する整流部と、
前記透過領域に設置された状態で前記透過領域から離隔した位置で前記整流面の一側側と前記透過領域との間の空隙にガスを供給するガス供給部と、
前記透過領域に設置された状態で前記透過領域から離隔した位置で、前記一側側と前記透過領域を挟む他側側で、前記整流面と前記被処理体の間の空隙にあるガスを前記空隙の外に排出するガス排出部と、を有し、
前記レーザ光が、前記被処理体上でラインビームの形状を有し、かつ前記透過領域が前記ラインビーム形状の短軸方向および長軸方向に合わせて、それぞれ短軸と長軸を有する長尺形状を有しており、
前記整流部は、前記整流面が前記透過領域の短軸側両側および長軸側両側で前記透過領域の外方に伸張していることを特徴とする。 That is, of the laser processing device rectifier of the present invention, the first present invention is
A rectifier provided in a laser processing apparatus that performs processing by irradiating a target object having a plate surface with laser light,
A plate surface of the object to be processed is disposed on an end side of a transmission region through which laser light is transmitted and irradiated to the object to be processed held by the laser processing apparatus, and spaced from the object to be processed. A rectifying unit having a rectifying surface extending outward of the transmission region along the line;
A gas supply unit that supplies gas to a gap between one side of the rectifying surface and the transmission region at a position separated from the transmission region in a state of being installed in the transmission region;
The gas in the gap between the rectifying surface and the object to be processed on the one side and the other side sandwiching the transmission region at a position separated from the transmission region in a state of being installed in the transmission region. and a gas discharge portion for discharging outside the air gap, were closed,
The laser beam has a line beam shape on the object to be processed, and the transmission region has a short axis and a long axis respectively corresponding to the short axis direction and the long axis direction of the line beam shape. Has a shape,
The rectifying unit is characterized in that the rectifying surface extends outward of the transmission region on both the short axis side and the long axis side of the transmission region .

上記本発明によれば、レーザ処理装置に設置することで、透過領域と離隔した位置でガスの供給と排出とがなされ、照射領域付近で均一な流速と圧力分布が形成され、安定した局部ガス雰囲気が形成される。
さらに、上記本発明によれば、透過領域の長軸方向外方および短軸方向外方において安定した局部ガス雰囲気を得ることができる。 According to the present invention, the gas is supplied and discharged at a position separated from the transmission region by being installed in the laser processing apparatus, a uniform flow velocity and pressure distribution is formed in the vicinity of the irradiation region, and a stable local gas is formed. An atmosphere is formed.
Furthermore, according to the present invention, a stable local gas atmosphere can be obtained on the outer side in the major axis direction and the outer side in the minor axis direction of the transmission region.

第４の本発明のレーザ処理装置は、板面を有する被処理体にレーザ光を照射して処理を行うレーザ処理装置において、
前記レーザ光が透過して該レーザ処理装置に保持された前記被処理体に照射される透過領域と、
前記透過領域端部側から、前記被処理体と間隔を置いて前記被処理体の板面に沿って前記透過領域外方に伸張する整流面を有する整流部と、
前記透過領域から離隔した位置で前記整流面の一側側と前記透過領域との間の空隙にガスを供給するガス供給部と、
前記透過領域から離隔した位置で、前記一側側と前記透過領域を挟む他側側で前記整流面と前記被処理体の間の空隙にあるガスを前記空隙の外に排出するガス排出部と、を有
し、
前記レーザ光が、前記被処理体上でラインビームの形状を有し、かつ前記透過領域が前記ラインビーム形状の短軸方向および長軸方向に合わせて、それぞれ短軸と長軸を有する長尺形状を有しており、
前記整流部は、前記整流面が前記透過領域の短軸側両側および長軸側両側で前記透過領域の外方に伸張していることを特徴とする。 A laser processing apparatus according to a fourth aspect of the present invention is a laser processing apparatus for performing processing by irradiating a target object having a plate surface with laser light.
A transmission region through which the laser beam is transmitted and irradiated to the object to be processed held by the laser processing apparatus;
A rectification unit having a rectification surface extending outward from the transmission region along the plate surface of the object to be processed at a distance from the object to be processed from the transmission region end side;
A gas supply unit that supplies gas to a gap between one side of the rectifying surface and the transmission region at a position separated from the transmission region;
A gas discharge unit that discharges the gas in the gap between the rectifying surface and the object to be processed to the outside on the one side and the other side sandwiching the transmission area at a position separated from the transmission area; , Have
And
The laser beam has a line beam shape on the object to be processed, and the transmission region has a short axis and a long axis respectively corresponding to the short axis direction and the long axis direction of the line beam shape. Has a shape,
The rectifying unit is characterized in that the rectifying surface extends outward of the transmission region on both the short axis side and the long axis side of the transmission region .

上記本発明によれば、透過領域と離隔した位置でガスの供給と排出とがなされ、照射領域付近で均一な流速と圧力分布が形成され、安定した局部ガス雰囲気が形成される。
さらに、上記本発明によれば、透過領域の長軸方向外方および短軸方向外方において安定した局部ガス雰囲気を得ることができる。 According to the present invention, gas is supplied and discharged at a position separated from the permeation region, a uniform flow velocity and pressure distribution are formed in the vicinity of the irradiation region, and a stable local gas atmosphere is formed.
Furthermore, according to the present invention, a stable local gas atmosphere can be obtained on the outer side in the major axis direction and the outer side in the minor axis direction of the transmission region.

第５の本発明のレーザ処理装置は、前記第４の本発明において、前記整流面は、前記透過領域の長軸端部側においてレーザ光の長軸端部から長軸方向で外側に２０ｍｍ以上伸張していることを特徴とする。 The laser processing apparatus according to a fifth aspect of the present invention is the laser processing apparatus according to the fourth aspect, wherein the rectifying surface is 20 mm or more outward in the major axis direction from the major axis end of the laser beam on the major axis end side of the transmission region. It is characterized by stretching.

第６の本発明のレーザ処理装置は、前記第４または第５の本発明において、前記ガス供給部と前記ガス排出部が、ガスの供給および排出によって生じるガス流が、前記レーザ光が前記被処理体に照射される前記照射領域を覆うように設けられていることを特徴とする。 According to a sixth aspect of the present invention, there is provided the laser processing apparatus according to the fourth or fifth aspect of the present invention, wherein the gas supply section and the gas discharge section are configured such that the gas flow generated by the supply and discharge of the gas It is provided so that the said irradiation area | region irradiated to a process body may be covered.

第７の本発明のレーザ処理装置は、前記第６の本発明において、前記ガス供給部と前記ガス排出部とが、前記透過領域を挟んで、それぞれ照射面上のレーザ光の長軸幅の両端を超える長さ範囲でガスの供給および排出を行うことを特徴とする。 Seventh laser processing apparatus of the present invention, the in the present invention of a 6, a pre-SL gas supply and the gas discharge portion, across the transmissive region, the laser light of the long axis width on each irradiation surface The gas is supplied and discharged in a length range exceeding both ends of the gas.

第８の本発明のレーザ処理装置は、前記第４〜第７の本発明のいずれかにおいて、前記整流部は、前記透過領域を基準にして、前記一側側で前記ガス供給部によるガス供給位置の外側にさらに前記整流面が伸張し、前記他側側で前記ガス排出部まで整流面が伸張していることを特徴とする。 The laser processing apparatus according to an eighth aspect of the present invention is the laser processing apparatus according to any one of the fourth to seventh aspects of the present invention, wherein the rectifying unit supplies gas by the gas supply unit on the one side with respect to the transmission region. The rectifying surface further extends to the outside of the position, and the rectifying surface extends to the gas discharge part on the other side.

第９の本発明のレーザ処理装置は、前記第４〜第８の本発明のいずれかにおいて、前記整流部は、前記整流面が前記透過領域を基準にして、前記ガス排出部によるガス排出位置の外側に伸張しており、前記ガス排出部は、前記空隙からガスを吸引するガス吸引部を有することを特徴とする。 The laser processing apparatus according to a ninth aspect of the present invention is the laser processing apparatus according to any one of the fourth to eighth aspects of the present invention, wherein the rectifying unit is configured such that the rectifying surface has a gas discharge position by the gas discharge unit based on the transmission region. The gas discharge part has a gas suction part for sucking gas from the gap.

第１０の本発明のレーザ処理装置は、前記第９の本発明において、前記ガス吸引部は、前記空隙に連通し、前記整流面と垂直な方向と前記ガス排出部の外側方向と間の方向にガスが流れるガス排出路を有していることを特徴とする。 A laser processing apparatus according to a tenth aspect of the present invention is the laser processing apparatus according to the ninth aspect , wherein the gas suction portion communicates with the gap and is between a direction perpendicular to the rectifying surface and an outer direction of the gas discharge portion. It has a gas discharge passage through which gas flows.

第１１の本発明のレーザ処理装置は、前記第９または第１０の本発明において、前記整流面は、前記ガス供給部によるガス供給位置の外側に伸張している長さが、前記ガス供給位置と前記ガス排出位置との間の間隔よりも大きいことを特徴とする。 According to an eleventh aspect of the present invention, there is provided the laser processing apparatus according to the ninth or tenth aspect of the present invention, wherein the rectifying surface has a length extending outside a gas supply position by the gas supply section. And a gap between the gas discharge position and the gas discharge position.

第１２の本発明のレーザ処理装置は、前記第１１の本発明において、前記整流面は、前記ガス排出部によるガス排出位置の外側に伸張している長さが、前記ガス供給位置と前記ガス排出位置との間の間隔よりも大きいことを特徴とする。 According to a twelfth aspect of the present invention, there is provided the laser processing apparatus according to the eleventh aspect of the present invention, wherein the length of the rectifying surface is extended outside the gas discharge position by the gas discharge portion. It is characterized by being larger than the interval between the discharge positions.

第１３の本発明のレーザ処理装置は、前記第４〜第１２の本発明のいずれかにおいて、前記ガス供給部は、前記空隙に連通し、前記整流面と垂直な方向と前記ガス供給部の内側方向と間の方向にガスが流れるガス供給路を有していることを特徴とする。 In the laser processing apparatus of a thirteenth aspect of the present invention, in any one of the fourth to twelfth aspects of the present invention, the gas supply unit communicates with the gap, and is perpendicular to the rectifying surface and the gas supply unit. It has the gas supply path through which gas flows in the direction between the inner side direction.

第１４の本発明のレーザ処理装置は、前記第４〜第１３の本発明のいずれかにおいて、前記被処理体の移動を行う移動装置を有し、
前記移動の方向を基準にして、移動方向後方側に前記ガス供給部によるガス供給位置を有し、移動方向前方側に前記ガス排出部によるガス排出位置を有していることを特徴とする。 A laser processing apparatus according to a fourteenth aspect of the present invention includes the moving apparatus for moving the object to be processed according to any one of the fourth to thirteenth aspects of the present invention,
With the movement direction as a reference, the gas supply position by the gas supply unit is provided on the rear side in the movement direction, and the gas discharge position by the gas discharge unit is provided on the front side in the movement direction.

第１５の本発明のレーザ処理装置は、前記第１４の本発明において、前記移動装置が往復動可能になっており、移動方向に従って前記ガス供給部と前記ガス排出部の切替えが可能になっていることを特徴とする。 In the laser processing apparatus according to a fifteenth aspect of the present invention, in the fourteenth aspect of the present invention, the moving device can reciprocate, and the gas supply unit and the gas discharge unit can be switched according to the moving direction. It is characterized by being.

第１６の本発明のレーザ処理装置は、前記第４〜第１５の本発明のいずれかにおいて、前記ガス供給部によるガス供給位置が、照射位置における前記レーザ光の近接する端部側と５０ｍｍ以上の距離を有していることを特徴とする。 In the laser processing apparatus according to a sixteenth aspect of the present invention, in any of the fourth to fifteenth aspects of the present invention, the gas supply position by the gas supply unit is 50 mm or more from the end side of the laser beam close to the irradiation position. It is characterized by having the distance of.

第１７の本発明のレーザ処理装置は、前記第４〜第１６の本発明のいずれかにおいて、前記ガス排出部によるガス排出位置が、照射位置における前記レーザ光の近接する端部側と５０ｍｍ以上の距離を有していることを特徴とする。 According to a seventeenth aspect of the present invention, there is provided the laser processing apparatus according to any one of the fourth to sixteenth aspects of the present invention, wherein the gas discharge position by the gas discharge section is 50 mm or more from the end portion side of the laser beam at the irradiation position. It is characterized by having the distance of.

第１８の本発明のレーザ処理装置は、前記第４〜第１７の本発明のいずれかにおいて、前記整流面と前記被処理体との間隔が１〜２０ｍｍの範囲内にあることを特徴とする。 In the laser processing apparatus according to an eighteenth aspect of the present invention, in any one of the fourth to seventeenth aspects of the present invention, an interval between the rectifying surface and the object to be processed is in a range of 1 to 20 mm. .

第１９の本発明のレーザ処理装置は、前記第４〜第１８の本発明のいずれかにおいて、前記被処理体に非単結晶半導体層を有し、前記レーザ光による処理が再結晶化であることを特徴とする。 According to a nineteenth aspect of the present invention, there is provided the laser processing apparatus according to any one of the fourth to eighteenth aspects, wherein the object to be processed has a non-single-crystal semiconductor layer, and the processing with the laser beam is recrystallization. It is characterized by that.

第６の本発明のレーザ処理装置は、前記第４または第５の本発明において、前記ガス供給部と前記ガス排出部が、ガスの供給および排出によって生じるガス流が、前記レーザ光が前記被処理体に照射される照射領域を覆うように設けられていることを特徴とする。 According to a sixth aspect of the present invention, there is provided the laser processing apparatus according to the fourth or fifth aspect of the present invention, wherein the gas supply section and the gas discharge section are configured such that the gas flow generated by the supply and discharge of the gas It is provided so that the irradiation area | region irradiated to a process body may be covered.

上記本発明によれば、ガスの供給位置がレーザ光の照射位置と十分に離隔していることで、照射位置前後でガスの流れが安定した層流を形成することができ、ガスの乱流を確実に排除できる。上記距離が条件を満たしていないと、安定した層流を確実に得ることが難しくなる。なお、上記距離は、さらに１５０ｍｍ以上とするのが一層望ましい。 According to the present invention, since the gas supply position is sufficiently separated from the laser beam irradiation position, a laminar flow in which the gas flow is stable before and after the irradiation position can be formed. Can be surely eliminated. If the distance does not satisfy the conditions, it becomes difficult to reliably obtain a stable laminar flow. The distance is more preferably 150 mm or more.

Claims (20)

板面を有する被処理体にレーザ光を照射して処理を行うレーザ処理装置に設けられる整流装置であって、
レーザ光が透過して、前記レーザ処理装置に保持された前記被処理体に照射される透過領域の端部側に設置され、前記被処理体と間隔を置いて、前記被処理体の板面に沿って前記透過領域の外方に伸張する整流面を有する整流部と、
前記透過領域に設置された状態で前記透過領域から離隔した位置で前記整流面の一側側と前記透過領域との間の空隙にガスを供給するガス供給部と、
前記透過領域に設置された状態で前記透過領域から離隔した位置で、前記一側側と前記透過領域を挟む他側側で、前記整流面と前記被処理体の間の空隙にあるガスを前記空隙の外に排出するガス排出部と、を有することを特徴とするレーザ処理装置整流装置。 A rectifier provided in a laser processing apparatus that performs processing by irradiating a target object having a plate surface with laser light,
A plate surface of the object to be processed is disposed on an end side of a transmission region through which laser light is transmitted and irradiated to the object to be processed held by the laser processing apparatus, and spaced from the object to be processed. A rectifying unit having a rectifying surface extending outward of the transmission region along the line;
A gas supply unit that supplies gas to a gap between one side of the rectifying surface and the transmission region at a position separated from the transmission region in a state of being installed in the transmission region;
The gas in the gap between the rectifying surface and the object to be processed on the one side and the other side sandwiching the transmission region at a position separated from the transmission region in a state of being installed in the transmission region. A laser processing device rectifier comprising: a gas discharge unit configured to discharge outside the gap. 前記整流部は、前記透過領域周縁全体に対し外方に伸張する形状を有していることを特徴とする請求項１記載のレーザ処理装置整流装置。   The laser processing device rectifier according to claim 1, wherein the rectifying unit has a shape extending outward with respect to the entire periphery of the transmission region. 前記整流部は、前記整流面が前記透過領域を基準にして前記ガス排出部の外側に伸張する大きさを有しており、前記ガス排出部は、前記空隙からガスを吸引するガス吸引部を有することを特徴とする請求項１または２に記載のレーザ処理装置整流装置。   The rectifying unit has a size such that the rectifying surface extends to the outside of the gas discharge unit with reference to the transmission region, and the gas discharge unit includes a gas suction unit that sucks gas from the gap. The laser processing device rectifier according to claim 1, wherein the rectifier has a laser processing device. 板面を有する被処理体にレーザ光を照射して処理を行うレーザ処理装置において、
前記レーザ光が透過して該レーザ処理装置に保持された前記被処理体に照射される透過領域と、
前記透過領域端部側から、前記被処理体と間隔を置いて前記被処理体の板面に沿って前記透過領域外方に伸張する整流面を有する整流部と、
前記透過領域から離隔した位置で前記整流面の一側側と前記透過領域との間の空隙にガスを供給するガス供給部と、
前記透過領域から離隔した位置で、前記一側側と前記透過領域を挟む他側側で前記整流面と前記被処理体の間の空隙にあるガスを前記空隙の外に排出するガス排出部と、を有することを特徴とするレーザ処理装置。 In a laser processing apparatus that performs processing by irradiating a target object having a plate surface with laser light,
A transmission region through which the laser beam is transmitted and irradiated to the object to be processed held by the laser processing apparatus;
A rectification unit having a rectification surface extending outward from the transmission region along the plate surface of the object to be processed at a distance from the object to be processed from the transmission region end side;
A gas supply unit that supplies gas to a gap between one side of the rectifying surface and the transmission region at a position separated from the transmission region;
A gas discharge unit that discharges the gas in the gap between the rectifying surface and the object to be processed to the outside on the one side and the other side sandwiching the transmission area at a position separated from the transmission area; And a laser processing apparatus. 前記レーザ光が、前記被処理体上でラインビームの形状を有し、かつ前記透過領域が前記ラインビーム形状の短軸方向および長軸方向に合わせて、それぞれ短軸と長軸を有する長尺形状を有しており、
前記整流部は、前記整流面が前記透過領域の短軸側両側および長軸側両側で前記透過領域の外方に伸張していることを特徴とする請求項４記載のレーザ処理装置。 The laser beam has a line beam shape on the object to be processed, and the transmission region has a short axis and a long axis respectively corresponding to the short axis direction and the long axis direction of the line beam shape. Has a shape,
5. The laser processing apparatus according to claim 4, wherein the rectifying unit has the rectifying surface extending outward of the transmission region on both the short-axis side and the long-axis side of the transmission region. 前記整流面は、前記透過領域の長軸端部側においてレーザ光の長軸端部から長軸方向で外側に２０ｍｍ以上伸張していることを特徴とする請求項１〜５のいずれか１項に記載のレーザ処理装置。   The said rectification | straightening surface is extended | stretched 20 mm or more to the outer side in the major axis direction from the major axis end part of the laser beam in the major axis end part side of the said permeation | transmission area | region. The laser processing apparatus as described in. 前記ガス供給部と前記ガス排出部が、ガスの供給および排出によって生じるガス流が、前記レーザ光が前記被処理体に照射される前記照射領域を覆うように設けられていることを特徴とする請求項５または６に記載のレーザ処理装置。   The gas supply unit and the gas discharge unit are provided so that a gas flow generated by supplying and discharging a gas covers the irradiation region where the laser beam is irradiated to the object to be processed. The laser processing apparatus according to claim 5 or 6. 前記レーザ光が、前記被処理体上でラインビームの形状を有し、かつ前記透過領域が前記ラインビーム形状の短軸方向および長軸方向に合わせて、それぞれ短軸と長軸を有する長尺形状を有しており、
前記ガス供給部と前記ガス排出部とが、前記透過領域を挟んで、それぞれ照射面上のレーザ光の長軸幅の両端を超える長さ範囲でガスの供給および排出を行うことを特徴とする請求項７記載のレーザ処理装置。 The laser beam has a line beam shape on the object to be processed, and the transmission region has a short axis and a long axis respectively corresponding to the short axis direction and the long axis direction of the line beam shape. Has a shape,
The gas supply unit and the gas discharge unit supply and discharge gas in a length range exceeding both ends of the major axis width of the laser beam on the irradiation surface with the transmission region interposed therebetween, respectively. The laser processing apparatus according to claim 7. 前記整流部は、前記透過領域を基準にして、前記一側側で前記ガス供給部によるガス供給位置の外側にさらに前記整流面が伸張し、前記他側側で前記ガス排出部まで整流面が伸張していることを特徴とする請求項５〜９のいずれか１項に記載のレーザ処理装置。   The rectifying unit further extends on the one side to the outside of the gas supply position by the gas supply unit with respect to the transmission region, and the rectification surface extends to the gas discharge unit on the other side. The laser processing apparatus according to claim 5, wherein the laser processing apparatus is extended. 前記整流部は、前記整流面が前記透過領域を基準にして、前記ガス排出部によるガス排出位置の外側に伸張しており、前記ガス排出部は、前記空隙からガスを吸引するガス吸引部を有することを特徴とする請求項５〜９のいずれか１項に記載のレーザ処理装置。   In the rectifying unit, the rectifying surface extends to the outside of the gas discharge position by the gas discharge unit with reference to the transmission region, and the gas discharge unit includes a gas suction unit that sucks gas from the gap. The laser processing apparatus according to claim 5, wherein the laser processing apparatus is provided. 前記ガス吸引部は、前記空隙に連通し、前記整流面と垂直な方向と前記ガス排出部の外側方向と間の方向にガスが流れるガス排出路を有していることを特徴とする請求項１０に記載のレーザ処理装置。   The gas suction portion includes a gas discharge path that communicates with the gap and allows gas to flow in a direction between a direction perpendicular to the rectifying surface and an outer direction of the gas discharge portion. The laser processing apparatus according to 10. 前記整流面は、前記ガス供給部によるガス供給位置の外側に伸張している長さが、前記ガス供給位置と前記ガス排出位置との間の間隔よりも大きいことを特徴とする請求項１０または１１に記載のレーザ処理装置。   The length of the rectifying surface extending outside the gas supply position by the gas supply unit is longer than a distance between the gas supply position and the gas discharge position. 11. The laser processing apparatus according to 11. 前記整流面は、前記ガス排出部によるガス排出位置の外側に伸張している長さが、前記ガス供給位置と前記ガス排出位置との間の間隔よりも大きいことを特徴とする請求項１２に記載のレーザ処理装置。   The length of the rectifying surface extending outside the gas discharge position by the gas discharge unit is longer than a distance between the gas supply position and the gas discharge position. The laser processing apparatus as described. 前記ガス供給部は、前記空隙に連通し、前記整流面と垂直な方向と前記ガス供給部の内側方向と間の方向にガスが流れるガス供給路を有していることを特徴とする請求項４〜１３のいずれか１項に記載のレーザ処理装置。   The gas supply section includes a gas supply path that communicates with the gap and allows gas to flow in a direction between a direction perpendicular to the rectifying surface and an inner direction of the gas supply section. The laser processing apparatus of any one of 4-13. 前記被処理体の移動を行う移動装置を有し、
前記移動の方向を基準にして、移動方向後方側に前記ガス供給部によるガス供給位置を有し、移動方向前方側に前記ガス排出部によるガス排出位置を有していることを特徴とする請求項４〜１４のいずれか１項に記載のレーザ処理装置。 A moving device for moving the object to be processed;
The gas supply position by the gas supply unit is provided on the rear side in the movement direction with respect to the movement direction, and the gas discharge position by the gas discharge unit is provided on the front side in the movement direction. Item 15. The laser processing apparatus according to any one of Items 4 to 14. 前記移動装置が往復動可能になっており、移動方向に従って前記ガス供給部と前記ガス排出部の切替えが可能になっていることを特徴とする請求項１５に記載のレーザ処理装置。   The laser processing apparatus according to claim 15, wherein the moving device is reciprocally movable, and the gas supply unit and the gas discharge unit can be switched according to a moving direction. 前記ガス供給部によるガス供給位置が、照射位置における前記レーザ光の近接する端部側と５０ｍｍ以上の距離を有していることを特徴とする請求項４〜１６のいずれか１項に記載のレーザ処理装置。   17. The gas supply position by the gas supply unit has a distance of 50 mm or more from an adjacent end side of the laser beam at the irradiation position. Laser processing equipment. 前記ガス排出部によるガス排出位置が、照射位置における前記レーザ光の近接する端部側と１５０ｍｍ以上の距離を有していることを特徴とする請求項４〜１７のいずれか１項に記載のレーザ処理装置。   18. The gas discharge position by the gas discharge unit has a distance of 150 mm or more from an adjacent end side of the laser beam at the irradiation position. 18. Laser processing equipment. 前記整流面と前記被処理体の板面との間隔が１〜２０ｍｍの範囲内にあることを特徴とする請求項４〜１８のいずれか１項に記載のレーザ処理装置。   The laser processing apparatus according to claim 4, wherein an interval between the rectifying surface and a plate surface of the object to be processed is in a range of 1 to 20 mm. 前記被処理体に非単結晶半導体層を有し、前記レーザ光による処理が再結晶化であることを特徴とする請求項４〜１９のいずれか１項に記載のレーザ処理装置。   The laser processing apparatus according to claim 4, wherein the object to be processed includes a non-single-crystal semiconductor layer, and the processing with the laser beam is recrystallization.
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