JP4043923B2 - Processing equipment - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a processing apparatus using a laser beam or an electron beam .
[0002]
[Prior art]
For example, when performing fine processing on a workpiece such as a semiconductor substrate, metal, organic material, glass, or ceramic, a processing apparatus using a processing laser or electron beam with high processing accuracy is used as necessary. It has been.
[0003]
As processing using the above-described processing apparatus, for example, in a manufacturing process of a semiconductor substrate (hereinafter referred to as “substrate”), a thin film formed on the alignment mark of the substrate is irradiated with a laser beam to thereby align the alignment mark of the substrate. A processing process for removing only the upper thin film has been proposed. (For example, refer to Patent Document 1). If the position of the alignment mark is detected with the thin film on the alignment mark, accurate detection is not performed. Therefore, the processing is performed in order to perform strict position adjustment of the substrate.
[0004]
[Patent Document 1]
Japanese Patent Application Laid-Open No. 10-11379
[Problems to be solved by the invention]
However, processing of a workpiece such as a substrate evaporates and decomposes a part of the workpiece by laser light, and a workpiece residue always floats around the workpiece. Such residues are usually charged by static electricity, and if left in this state, they will reattach to the workpiece. Such re-adhesion results in contamination of the workpiece and often adversely affects post-processing of the workpiece. In particular, in the case of substrate processing, due to the contamination, subsequent exposure processing, development processing, heating processing, and the like may not be appropriately performed, and a normal circuit pattern may not be finally formed. Therefore, a means for preventing reattachment of the residue generated by laser processing to the workpiece is required.
[0006]
As a means for preventing such reattachment of residue, Japanese Patent Application Laid-Open No. 11-145108 proposes a micromachining apparatus that performs hole machining by irradiating a laser beam in a state where a substrate is immersed in a processing tank in which liquid is stored. ing. However, in this microfabrication apparatus, since the removed film residue floats around the substrate, it is not possible to sufficiently prevent the film residue from reattaching. In addition, since the liquid adheres to the entire substrate, a cleaning mechanism for cleaning the entire substrate is required as post-processing, and the processing process is complicated.
[0007]
The present invention has been made in view of the above points, and provides a processing apparatus capable of preventing residues generated from a workpiece such as a substrate from re-adhering to the workpiece by irradiation with a laser beam or an electron beam. The purpose is to do.
[0008]
[Means for Solving the Problems]
According to the present invention, there is provided a processing apparatus for processing a workpiece by irradiation of a laser beam or an electron beam, an irradiation unit for irradiating a laser beam or an electron beam to the workpiece, the irradiation position in the workpiece A fluid supply port for supplying a fluid to the irradiation position from the outer side, and a suction port that is disposed opposite to the irradiation position and sucks a residue generated by processing by the laser beam or electron beam together with the fluid. The processing apparatus is provided, wherein the irradiation position is located inside the suction port and deviated from the center of the suction port as viewed from above.
[0009]
According to the present invention, as shown in FIG. 1, the residue A generated from the irradiation position C of the workpiece X by the irradiation of the irradiation part R of the laser beam or the electron beam is supplied from the fluid supply port D on the outer side. The fluid L is taken in and sucked from the suction port E facing the irradiation position C. When the fluid L flowing from the outside is sucked up at the suction port E, a stagnation F is formed near the center of the suction port E. On the other hand, in the vicinity of the peripheral edge of the suction port E, a smooth upward flow is formed. Since the irradiation position C of the laser beam or the electron beam is inside the suction port E as viewed from the plane and deviated from the center of the suction port E, the residue A is generated in the vicinity of the peripheral portion of the suction port E, The stagnation F is avoided and suction is performed through the vicinity of the peripheral edge of the suction port E. As a result, the residue A is immediately removed without remaining in the vicinity of the workpiece X, and reattachment of the residue A to the workpiece X is prevented.
[0010]
The irradiation position of the laser beam or the electron beam may be shifted from the center of the suction port to the fluid supply port side when viewed from a plane. The flow rate of the suction fluid at the suction port is faster near the fluid supply port to which the fluid is supplied. Therefore, by shifting the irradiation position of the laser beam or electron beam toward the fluid supply port, the residue generated from the workpiece is immediately sucked from the suction port, and the residue is discharged without reattaching to the workpiece. .
[0011]
The fluid containing the residue sucked into the suction port is then discharged in a predetermined radial direction with respect to the central axis of the suction port as viewed from the plane, and the irradiation position of the laser beam or electron beam is viewed from the plane. The center of the suction port may be shifted to the predetermined radial direction. Thus, when the fluid is discharged in a predetermined radial direction with respect to the central axis of the suction port, the flow velocity of the suction fluid passing through the suction port is faster in the radial direction as seen from the plane. Therefore, the residue generated from the workpiece can be sucked and removed more quickly by shifting the irradiation position of the laser beam or the electron beam in the radial direction.
[0012]
The processing apparatus includes a residue remover that can be disposed opposite to a workpiece and sucks and removes residues generated from the workpiece. The center of the residue remover has an upper surface to a lower surface of the residue remover. A suction through-hole penetrating therethrough is provided, and the fluid supply port opens on the outer peripheral portion of the lower surface of the residue removing body, and the lower opening of the suction through-hole constitutes the suction port, and the suction An upper end portion of the through hole is closed with a transparent body through which the laser beam or electron beam is transmitted, and the laser beam or the electron beam is irradiated to the workpiece through the transparent body, the suction through hole, and the suction port. Furthermore, a discharge port for discharging the fluid containing the residue flowing into the suction through hole to the outside of the residue removing body may be opened on the inner surface of the suction through hole.
[0013]
In such a case, the residue removing body is disposed opposite to the workpiece, fluid is supplied from the fluid supply port, fluid containing residue is sucked into the suction through hole from the suction port, and the fluid is discharged from the suction through hole. Can be discharged from. On the other hand, a transmission body is attached to the upper end portion of the suction through hole of the residue removal body, and laser light or an electron beam is irradiated to the workpiece through the transparent body, the suction through hole, and the suction port. Therefore, the workpiece can be irradiated with a laser beam or an electron beam from above the residue remover to process the workpiece, and the residue generated by the machining can be sucked and discharged by the residue remover.
[0014]
The irradiation position of the laser beam or the electron beam may be shifted to the fluid supply port side from the center of the suction port as viewed from the plane. The fluid supply port may be opened at a plurality of locations, and the irradiation position of the laser beam or the electron beam may be shifted to any one of the plurality of fluid supply ports. Since the flow rate of the suction fluid passing through the suction port is faster on the fluid supply port side to which the fluid is supplied, the residue generated from the workpiece can be taken into the fast flow and immediately discharged. The fluid supply port may be opened at two locations on both sides of the suction port.
[0015]
The fluid supply port and the discharge port may be arranged on the same straight line passing through the center of the suction port as viewed from above.
[0016]
The residue-removing body has a substantially cylindrical convex portion with a central portion with the suction port projecting downward from an outer peripheral portion with the fluid supply port on a lower surface thereof, and a lower end portion of the convex portion , A groove directed from the fluid supply port side toward the central axis of the suction port may be formed. In this case, since more fluid is supplied from the liquid supply port side toward the center of the suction port, stagnation formed near the center of the suction port is pushed to the opposite side. As a result, the area without stagnation is enlarged, and the residue generated from the workpiece is more reliably discharged.
[0017]
The groove may be formed in a direction shifted from the central axis of the suction port. In this case, a swirl flow is formed at the suction port. This swirling flow and the original upward flow are combined to form a flow having a strong conveying force. As a result, the residue can be removed immediately without staying near the workpiece.
[0018]
A replenishing port for replenishing fluid into the suction through hole may be opened on an inner surface of the suction through hole facing the discharge port. In this case, the suction through hole can be replenished with fluid, for example, the suction through hole can be filled with the fluid. Thereby, for example, the density in the suction through-hole becomes uniform, so that the laser beam or the electron beam is appropriately irradiated without bending or attenuating the laser beam or the electron beam . Also, the internal pressure in the suction through hole can be adjusted so that nothing other than the fluid flows from the suction port.
[0019]
The said residue removal body may be provided with the retention part which once retains the fluid which flows out out of the said fluid supply port. In this case, since the fluid is once retained, it is possible to prevent the fluid from flowing out from the fluid supply port and diffusing around the residue removing body. Therefore, the supplied fluid is more reliably sucked into the suction port, and a flow for removing the residue can be efficiently formed.
[0020]
An ion for removing static electricity may be added to the fluid supplied from the fluid supply port. Usually, the residue generated from the workpiece is charged and is easily reattached to the workpiece. As in this processing apparatus, by adding ions for removing static electricity, the static electricity of the residue is removed, and reattachment of the residue to the workpiece can be suppressed.
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, preferred embodiments of the present invention will be described. FIG. 2 is an explanatory diagram showing an outline of the configuration of the processing apparatus 1 according to the present embodiment. The processing apparatus 1 is an apparatus for performing fine processing on the surface of the wafer W, for example.
[0022]
The processing apparatus 1 includes, for example, a chuck 2 that is a holding member that holds the wafer W, a residue removal body 3 that can be disposed on the wafer W held by the chuck 2, and that removes residues generated by the processing, and a residue removal body 3 mainly includes a laser beam irradiation unit 4 as an irradiation unit that irradiates the wafer W with a processing laser beam from above 3.
[0023]
For example, the residue removing body 3 and the laser beam irradiation unit 4 are fixedly provided in the processing apparatus 1, and the chuck 2 is provided in the processing apparatus 1 so as to be movable in the horizontal XY directions. . For example, an XY drive mechanism 5 is attached to the chuck 2 and moves by a predetermined distance in the XY direction while holding the wafer W so that the processed part B of the wafer W is moved to the laser beam irradiation unit 4. The irradiation position C can be adjusted.
[0024]
The residue remover 3 is provided between the wafer W and the laser beam irradiation unit 4. For example, as shown in FIGS. 3 and 4, the residue remover 3 has a substantially cylindrical shape, and a suction through hole 10 is formed in a central axis P in the vertical direction. The suction through-hole 10 is formed so that its longitudinal section has an inverted truncated cone shape, that is, its diameter increases as it goes upward. A lower end portion of the suction through hole 10 is a suction port 11 facing the wafer W. That is, the suction port 11 is opened at the center of the lower surface of the residue removing body 3. The residue removing body 3 has a substantially cylindrical convex portion 3a that protrudes downward from the outer peripheral portion at the center of the lower surface where the suction port 11 is located. The convex portion 3a is formed in a circular shape when viewed from the plane. The upper end portion of the suction through hole 10 is closed by a transparent plate 12 as a transparent body that can transmit laser light. By doing so, the laser light emitted from above the residue remover 3 can be transmitted through the residue remover 3 and irradiated onto the surface of the lower wafer W.
[0025]
A plurality of, for example, two fluid supply ports for supplying a predetermined fluid between the residue remover 3 and the wafer W on the outer periphery of the bottom surface of the residue remover 3 outside the suction through hole 10 13 and 14 are open. For example, as shown in FIG. 4, the fluid supply ports 13 and 14 are open on both sides of the suction port 11 on the same circumference concentric with the suction port 11 when viewed from above. As shown in FIG. 3, a fluid supply channel 15 is formed on the outer periphery of the residue remover 3, and the fluid supply channel 15 is directed from the outer side of the residue remover 3 toward the center and then bent substantially at a right angle. Thus, the fluid supply ports 13 and 14 are formed so as to reach downward. Therefore, the fluid is discharged from the lower surface of the outer peripheral portion of the residue remover 3 vertically downward.
[0026]
The fluid supply channel 15 is connected to a fluid supply device 16 outside the residue remover 3 by a supply pipe 17, for example. The fluid supply device 16 includes, for example, a pump and a flow meter, and can freely set the flow rate of the fluid supplied from the fluid supply ports 13 and 14.
[0027]
On the inner side surface of the suction through hole 10, a discharge port 18 for discharging the fluid flowing into the suction through hole 10 from the suction port 11 to the outside of the residue removing body 3 is opened. The discharge port 18 communicates with a discharge flow path 19 that passes through the residue removing body 3. The discharge channel 19 is formed in a horizontal direction at a position above the fluid supply channel 15 from the discharge port 18 toward the outer surface of the residue removing body 3. The discharge channel 19 is formed, for example, so as to overlap the fluid supply port 13 immediately above one fluid supply port 13, that is, as viewed from above as shown in FIG. Therefore, the fluid supplied from the fluid supply ports 13 and 14 flows into the suction through hole 10, and then passes through the discharge port 18 and the discharge channel 19 that are collinear with the fluid supply ports 13 and 14 when viewed from above. It is discharged toward the outer radial direction.
[0028]
As shown in FIG. 3, the discharge channel 19 is connected to a discharge device 20 outside the residue removing body 3 by a discharge pipe 21. The discharge device 20 includes, for example, a pump and a flow meter, and can freely set the flow rate of the fluid discharged from the discharge port 18, that is, the flow rate of the fluid sucked from the suction port 11. Residue generated from the wafer W during laser light irradiation by the suction by the discharge device 20 is sucked into the residue remover 3 together with the fluid and discharged.
[0029]
A fluid replenishing port 22 for directly replenishing fluid into the suction through hole 10 is opened at a position facing the discharge port 18 of the suction through hole 10. The fluid replenishment port 22 communicates with a fluid replenishment path 23 that passes through the residue removing body 3. As shown in FIG. 4, the fluid replenishment path 23 is formed in a horizontal direction from the outer surface of the residue removal body 3 toward the fluid replenishment port 22, for example, at a position on the opposite side of the discharge flow path 19 across the suction through hole 10. Has been. Further, the fluid replenishment path 23 is formed so as to overlap the fluid supply port 14 when viewed from above.
With this fluid replenishment path 23, fluid can be replenished in the suction through path 10, and the suction through path 10 can be filled with the fluid without any gap. The pressure in the suction through hole 10 can be adjusted by changing the replenishment amount of the fluid into the suction through hole 10.
[0030]
As shown in FIG. 3, the fluid replenishment path 23 is connected to, for example, a fluid supply device 24 outside the residue removing body 3 by a replenishment pipe 25. The fluid supply device 24 includes, for example, a pump, a flow meter, and the like, and can freely set the flow rate of the fluid replenished in the suction through hole 10.
[0031]
The laser beam irradiation unit 4 is installed above the residue removal body 3. The laser beam irradiation unit 4 is arranged such that the irradiation position C is deviated from the central axis P of the suction port 11 of the residue removing body 3. The irradiation position C is shifted from the central axis P to the fluid supply port 13 side (discharge port 18 side). For example, when the diameter of the suction port 11 is about 5 mm, it is shifted from the central axis P by about 0.05 mm to 1 mm, which is about 1% to 20%. Therefore, the laser beam is irradiated to a position shifted from the central axis P of the residue removing body 3, and laser processing is performed at that position.
[0032]
Next, the operation of the processing apparatus 1 configured as described above will be described using a processing process for removing the coating film T applied onto the alignment mark M of the wafer W as an example. As shown in FIG. 5, the wafer W is held by the chuck 2, and the chuck 2 moves so that the coating film T that is the processed portion B of the wafer W is aligned with the irradiation position C of the laser beam. The coating film T is disposed opposite to the suction port 11 of the residue removing body 3 and is displaced toward the fluid supply port 13 with respect to the central axis P of the suction port 11. The distance between the suction port 11 and the wafer W is set to about 0.4 mm to 0.7 mm, for example. Then, pure water H, which is a fluid, for example, a liquid, starts to be supplied from the fluid supply ports 13 and 14, and the pure water H is filled between the residue remover 3 and the wafer W. At this time, the total flow rate of the pure water H discharged from the fluid supply ports 13 and 14 is set to Q1.
[0033]
At the same time as the pure water H starts to be supplied, the discharge from the discharge port 18 is also started. As a result, the pure water H supplied to the coating film T from the fluid supply ports 13, 14 flows into the suction through hole 10 upward from the suction port 11, and then from the upper discharge port 18 to the discharge channel. 19 is discharged from the side surface of the residue removing body 3. The discharge amount of pure water H from the discharge port 18 is set to Q2, and as a result, the flow rate of pure water sucked up from the suction port 11 is Q3 = Q2-Q1. Further, pure water H is replenished from the liquid replenishing port 22 at a flow rate Q4. Q4 is set so as to satisfy the condition of Q4> Q3. As a result, the inside of the suction through hole 10 is filled with pure water H. Since the inside of the suction through-hole 10 is sufficiently filled by replenishment with the pure water H at the flow rate Q4, it is possible to suppress the inflow of things other than the pure water H from the suction port 11, for example, ambient gas.
[0034]
When the inside of the suction through hole 10 of the residue removing body 3 is filled with pure water H, the laser beam for processing is irradiated from the laser beam irradiation unit 4 to the coating film T. As shown in FIG. 6, the residue A generated from the coating film T by the irradiation of the laser light is taken into the pure water H and is sucked from the suction port 11 along the rising flow of the pure water H. At this time, since the irradiation position C of the laser beam is irradiated to a position shifted from the central axis P of the suction port 11, the residue A enters the suction port 11 from the vicinity of the outer periphery avoiding the central portion of the suction port 11. Flows in. Thereafter, the residue A rises in the suction through hole 11 together with the pure water H, flows into the discharge port 18, and is discharged through the discharge channel 19.
[0035]
When the removal of the coating film T is completed, for example, the supply of pure water H from the fluid supply ports 13 and 14, the replenishment of pure water H from the fluid replenishment port 22, and the discharge from the discharge port 18 are stopped, and a series of processing treatments Ends.
[0036]
According to the above embodiment, the laser light irradiation position C is shifted from the central axis P of the suction port 11, so that stagnation formed near the center of the suction port 11 is avoided, and the flow is fast. Residue A can be inhaled. As a result, the residue A does not stay near the surface of the wafer W, but is immediately sucked into the suction through-hole 10, so that the residue A is prevented from reattaching to the wafer W. In addition, in the suction port 11, the fluid supply port 13 and the discharge port 18 closer to the fluid supply port 13 and the discharge port 18 than the center portion in a plan view are on the shortest flow path between the fluid supply port 13 and the discharge port 18, thereby forming a stronger flow. . Since the irradiation position C of the laser beam is shifted to the fluid supply port 13 and the discharge port 18 as viewed from the plane, the residue A generated from the irradiation position C can be removed immediately.
[0037]
Since the fluid replenishment port 22 is provided in the suction through-hole 10 of the residue removing body 3, the suction through-hole 10 can be filled with pure water H without a gap. As a result, the inside of the suction through-hole 10 is maintained at a uniform density, so that the optical path of the laser light is not bent and the laser light is not attenuated. In addition, the internal pressure in the suction through hole 10 can be adjusted to prevent a gas other than pure water H from flowing in from the suction port 11.
[0038]
In the above embodiment, pure water H, which is a liquid, is used as the fluid, but a gas such as nitrogen gas or oxygen gas may be used. For example, in the case of gas, as shown in FIG. 7, the fluid supply ports 30 and 31 may be provided with a staying portion 32 where the gas once stays. As shown in FIG. 8, the stay portion 32 is formed in a groove shape that is concentric with the suction port 11 and wider than the diameter of the fluid supply ports 30 and 31. The lower surface of the staying portion 32 opens to the wafer W side, and the gas that is vigorously supplied from the fluid supply flow path 15 stays once in the staying portion 32 and is supplied to the wafer W side with the flow rate lowered. The By doing so, it is possible to suppress the supply gas from diffusing around the residue removing body 3 and to efficiently supply the gas to the part B to be processed.
[0039]
As shown in FIGS. 9 and 10, for example, a groove 50 from the fluid supply port 13 side toward the central axis P of the suction port 11 may be formed on the lower surface of the convex portion 3 a of the residue removing body 3. By doing so, more fluid is supplied to the suction port 11 from the irradiation position C side, and for example, stagnation formed near the central axis P can be pushed to the opposite side. Therefore, the residue A generated by the laser beam irradiation can be more reliably sucked into the residue removing body 3 while avoiding stagnation.
[0040]
In addition, as shown in FIG. 11, a groove 60 may be formed on the lower surface of the convex portion 3 a in a direction shifted from the central axis P of the suction port 11. The groove 60 may be formed at a plurality of places, for example, two places. In such a case, a swirling flow is formed near the outer periphery of the suction port 11, and the original upward flow and the swirling flow are combined, so that the conveying force of the fluid residue A is improved.
[0041]
In the above embodiment, the irradiation position C of the laser beam is shifted to the fluid supply port 13 side, but may be shifted to the opposite fluid supply port 14 side. Even in such a case, since the residue A can be sucked from the portion having a high flow velocity while avoiding the stagnation of the central portion of the suction port 11, the reattachment of the wafer W of the residue A can be prevented. Note that the number of fluid supply ports can be arbitrarily selected, and may be three or more. In this case, the irradiation position C may be shifted from any one of the plurality of fluid supply ports.
[0042]
Although the fluid replenishing port 18 is provided in the residue removing body 3, the fluid replenishing port 18 is not necessarily provided. In particular, when the fluid used is a gas, it is not necessary to fill the suction vent hole 10 with a liquid in order to improve the laser beam transmission, so that proper laser processing can be performed without the fluid replenishment port 23. Is called.
[0043]
As shown in FIG. 12, an ionizer 70 may be attached to the supply pipe 17 that leads to the fluid supply ports 13 and 14, and ions for removing static electricity may be added to the supplied fluid. The residue A is normally charged when it is generated, and tends to adhere to the surface of the wafer W. The static electricity is removed from the residue A by the ions added by the ionizer 70, and the residue A can be prevented from reattaching to the wafer W.
[0044]
The example of the embodiment of the present invention has been described above, but the present invention is not limited to this example and can take various forms. For example, in the embodiment, the XY moving mechanism 5 for moving the wafer W side is provided, but a moving mechanism for moving the laser light irradiation unit 4 and the residue removing body 3 side may be provided. In the above embodiment, the laser beam is used for processing, but an electron beam may be used . In the above-described embodiment, the coating film T on the wafer W is processed. However, other processing processing, for example, processing processing for adding a mark, a symbol, a number, etc. to the surface of the wafer W, is formed on the wafer W. The present invention can also be applied to processing for cutting a gold wire or the like. Further, the present invention is not limited to the wafer W, and the present invention can be applied to other substrates such as an LCD substrate, other workpieces such as metal, organic matter, glass, and ceramics.
[0045]
【The invention's effect】
According to the present invention, since the residue is prevented from reattaching to the workpiece, the workpiece is not contaminated, and the yield of the workpiece is improved.
[Brief description of the drawings]
1 is a schematic view of a processing apparatus for explaining the invention of claim 1;
FIG. 2 is an explanatory diagram showing an outline of a configuration of a processing apparatus according to the present invention.
FIG. 3 is an explanatory view of a longitudinal section showing an outline of a configuration of a residue remover.
FIG. 4 is a plan view of a residue remover.
FIG. 5 is a vertical cross-sectional view of a residue remover in use.
FIG. 6 is an enlarged view of the lower part of the residue remover in use.
FIG. 7 is an explanatory view of a longitudinal section showing a configuration of a residue remover provided with a staying portion.
FIG. 8 is a bottom view of the residue remover of FIG.
FIG. 9 is an explanatory view of a longitudinal section showing a configuration of a residue remover provided with grooves.
10 is a bottom view of the residue remover of FIG. 9. FIG.
FIG. 11 is a bottom view of a residue remover provided with two grooves.
FIG. 12 is a longitudinal sectional view of a residue remover provided with an ionizer.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Processing apparatus 3 Residue removal body 4 Laser beam irradiation part 11 Suction port 12 Transparent plate 13,14 Fluid supply port 18 Discharge port B Processed part C Irradiation position H Pure water W Wafer

Claims (13)

A processing apparatus for processing a workpiece by irradiation with a laser beam or an electron beam ,
An irradiation unit for irradiating a workpiece with a laser beam or an electron beam ;
A fluid supply port for supplying fluid to the irradiation position from the outer side of the irradiation position in the workpiece;
A suction port that is disposed opposite to the irradiation position and sucks together with the fluid a residue generated by processing with the laser beam or electron beam ,
The processing apparatus according to claim 1, wherein the irradiation position is inside the suction port and deviated from the center of the suction port as viewed from above. 2. The processing apparatus according to claim 1, wherein the irradiation position of the laser beam or the electron beam is shifted from the center of the suction port toward the fluid supply port as viewed in a plan view. The fluid containing the residue sucked into the suction port is then discharged in a predetermined radial direction with respect to the central axis of the suction port as viewed from above,
3. The processing apparatus according to claim 1, wherein an irradiation position of the laser beam or the electron beam is deviated from a center of the suction port toward the predetermined radial direction when viewed from a plane. . A residue remover that can be placed opposite the workpiece and removes the residue generated from the workpiece by suction.
A suction through-hole penetrating from the upper surface to the lower surface of the residue removing body is provided at the center of the residue removing body,
The fluid supply port opens on the outer periphery of the bottom surface of the residue remover,
The lower opening of the suction through hole constitutes the suction port,
An upper end portion of the suction through hole is closed with a transparent body through which the laser beam or electron beam is transmitted, and the laser beam or electron beam passes through the transparent body, the suction through hole, and the suction port to the workpiece. Irradiated,
The discharge hole for discharging the fluid containing the residue flowing into the suction through hole to the outside of the residue removing body is opened on the inner side surface of the suction through hole. The processing apparatus according to 1. The processing apparatus according to claim 4, wherein the irradiation position of the laser beam or the electron beam is shifted to the fluid supply port side from the center of the suction port when viewed from a plane. The fluid supply port is open at a plurality of locations,
The processing apparatus according to claim 5, wherein an irradiation position of the laser beam or the electron beam is shifted to any one of the plurality of fluid supply ports.   The processing apparatus according to claim 6, wherein the fluid supply port is opened at two positions on both sides of the suction port.   The processing apparatus according to claim 5, wherein the fluid supply port and the discharge port are arranged on the same straight line passing through the center of the suction port as viewed from above. . The residue-removing body has a substantially cylindrical convex portion on the lower surface thereof, the central portion having the suction port projecting downward from the outer peripheral portion having the fluid supply port,
9. The groove according to any one of claims 5, 6, 7 and 8, wherein a groove directed from the fluid supply port side toward the central axis of the suction port is formed at a lower end portion of the convex portion. The processing apparatus as described.   The processing apparatus according to claim 9, wherein the groove is formed in a direction shifted from a central axis of the suction port.   The replenishing port for replenishing fluid in the suction through-hole is opened on an inner surface of the suction through-hole facing the discharge port. , 8, 9 or 10.   The said residue removal body was provided with the retention part which once retains the fluid which flows out out of the said fluid supply port, The any one of Claim 4, 5, 6, 7, 8, 9, 10 or 11 characterized by the above-mentioned. The processing apparatus as described.   Ions for removing static electricity are added to the fluid supplied from the fluid supply port, 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, The processing apparatus in any one of 11 or 12.

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