WO2018074283A1 - Laser processing apparatus and laser processing method - Google Patents

Laser processing apparatus and laser processing method Download PDF

Info

Publication number
WO2018074283A1
WO2018074283A1 PCT/JP2017/036660 JP2017036660W WO2018074283A1 WO 2018074283 A1 WO2018074283 A1 WO 2018074283A1 JP 2017036660 W JP2017036660 W JP 2017036660W WO 2018074283 A1 WO2018074283 A1 WO 2018074283A1
Authority
WO
WIPO (PCT)
Prior art keywords
gas
discharge port
laser
laser processing
processing apparatus
Prior art date
Application number
PCT/JP2017/036660
Other languages
French (fr)
Japanese (ja)
Inventor
石煥 鄭
政志 町田
Original Assignee
株式会社日本製鋼所
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社日本製鋼所 filed Critical 株式会社日本製鋼所
Priority to CN201780064615.2A priority Critical patent/CN109844907B/en
Priority to JP2018507038A priority patent/JP7105187B2/en
Priority to US16/342,182 priority patent/US11810799B2/en
Publication of WO2018074283A1 publication Critical patent/WO2018074283A1/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/082—Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/083—Devices involving movement of the workpiece in at least one axial direction
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/0869—Devices involving movement of the laser head in at least one axial direction
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/12—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure
    • B23K26/123—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure in an atmosphere of particular gases
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/12—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure
    • B23K26/127—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure in an enclosure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/14—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/14—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor
    • B23K26/1435—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor involving specially adapted flow control means
    • B23K26/1437—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor involving specially adapted flow control means for flow rate control
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/14—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor
    • B23K26/1462—Nozzles; Features related to nozzles
    • B23K26/1464—Supply to, or discharge from, nozzles of media, e.g. gas, powder, wire
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Definitions

  • the present invention relates to a laser processing apparatus and a laser processing method for performing desired processing by irradiating a target object with laser light.
  • an apparatus for performing an annealing process by irradiating a laser beam to a silicon semiconductor film or the like on a substrate, an apparatus is known that performs a process by forming a local gas atmosphere surrounding a region irradiated with a laser beam on a substrate.
  • Patent Documents 1 and 2 For example, refer to Patent Documents 1 and 2).
  • FIG. 12 is a diagram illustrating an example of a conventional laser processing apparatus.
  • a laser beam irradiation local seal box 110 is provided in the lower part of the top plate of the processing chamber 100, and a laser light introduction window 101 is provided in the upper top plate of the laser light irradiation local seal box 110.
  • a rectifying plate 111 extending in the front and rear directions of the movement of the substrate 120 is continuously formed. Nitrogen gas is introduced into the laser beam irradiation local seal box 110, and the nitrogen gas is released downward through a laser light transmission hole 112 provided on the lower surface of the laser light irradiation local seal box 110.
  • a stage 102 that holds a substrate and is movable in the horizontal direction in the figure is installed.
  • An entrance / exit 104 is provided at a side portion of the processing chamber 100, and the entrance / exit 104 is opened and closed by the operation of the gate valve 103.
  • the gate valve 103 opens the entrance / exit 104 to introduce the substrate 120 into the processing chamber 100, and after the introduction of the substrate 120, the gate valve 103 closes the entrance / exit 104.
  • the substrate 120 is formed with a non-single-crystal semiconductor film (not shown). Note that when the doorway 104 is opened, outside air intrudes into the processing chamber 100.
  • the substrate 120 is held by the stage 102, moves in the processing chamber 100 at a predetermined speed together with the stage 102, and the substrate 120 is irradiated with the laser light 130 through the laser light transmission hole 112.
  • the non-single-crystal semiconductor film is single-crystallized by irradiation with the laser light 130.
  • the gate valve 103 opens the entrance / exit and takes the substrate 120 out of the processing chamber 100.
  • JP 2002-217124 A Japanese Patent No. 5408678
  • gas is ejected toward the substrate along the laser optical axis at the position where the substrate is irradiated with laser light.
  • turbulence occurs around the laser light irradiation position.
  • the gas flow to be injected has been improved to be a laminar flow.
  • attempts have been made to slow down the gas flow rate and reduce the turbulent flow, but it is difficult to form a uniform atmosphere that is the original purpose.
  • turbulent flow occurs, turbulence of gas pressure and temperature occurs.
  • vapor or fine particles of a constituent element for example, Si
  • the semiconductor film for example, Si film
  • the gas suction port of the present invention In a state where turbulent flow is generated or a state where the flow velocity is extremely small, it is difficult to discharge substances generated from the irradiated object such as the vapor and fine particles from the laser beam path.
  • This problem corresponds to the gas suction port of the present invention.
  • the atmosphere stabilized when the substrate is carried in / out around the irradiation position of the laser beam is disturbed by an external gas flow. This problem corresponds to the second or third gas discharge port of the present invention.
  • the present invention has been made in order to solve the above-described problems of the prior art, and prevents laser gas turbulence and allows a uniform atmosphere to be maintained by an arbitrary gas type.
  • An object is to provide an apparatus and a laser processing method.
  • the first aspect of the present invention is In a laser processing apparatus for irradiating a target object while relatively scanning laser light, A scanning moving unit for moving one or both of the object to be processed and the laser beam; A laser beam irradiation unit that irradiates the object to be processed with the laser beam; A gas discharge unit that discharges at least a first gas to an irradiation region irradiated with the laser beam in the object to be processed; The gas discharge portion has a rectifying surface at a position facing the object to be processed during laser light irradiation, and the rectifying surface includes at least the first gas discharge port from which the first gas is discharged, In the scanning direction, one or both of a second gas discharge port and a gas front / rear suction port for discharging a second gas to the object being irradiated with laser light are provided on both outer sides of the first gas discharge port. It is characterized by being.
  • the first gas discharge port is characterized in that the first gas is discharged in a range where the irradiation region is covered.
  • the second gas discharge port and the gas front-rear suction port have shapes that exceed the shape in the width direction of the irradiation region on both sides. It is characterized by being.
  • the invention of the laser processing apparatus of another form is the present invention of the above form,
  • the gas discharge part is provided with one or both of a third gas discharge port and a gas side suction port for discharging a third gas to the object to be moved on both sides in the scanning direction. It is characterized by that.
  • the third gas discharge port and the gas side suction port have shapes that exceed the shape of the irradiation region in the scanning direction on both sides. It is characterized by that.
  • the invention of the laser processing apparatus of another form is the present invention of the form described above, wherein the gas discharge part is one or both of the outer sides of the first gas discharge port, and the second gas discharge port and the gas.
  • a front and rear suction port, and the gas front and rear suction port is located inside the second gas discharge port.
  • the invention of the laser processing apparatus of another form is the invention of the above form, wherein the second gas discharge port emits the second gas toward the lower outside with respect to the first gas discharge port. It has a predetermined discharge angle.
  • another aspect of the invention of the laser processing apparatus according to the present invention of the above aspect is characterized in that the emission angle is 45 degrees or more.
  • the invention of the laser processing apparatus of another form is characterized in that, in the present invention of the above form, the distance between the rectifying surface and the object to be moved is 10 mm or less.
  • the rectifying surface is 10 mm or more longer than the length of the laser beam on the irradiation surface in the scanning direction with respect to the first emission port. It is characterized by extending at a length of.
  • the second gas discharge port is provided at a position separated by 1 mm or more in the scanning direction with respect to the first gas discharge port. It is characterized by being.
  • the invention of the laser processing apparatus of another form is characterized in that, in the present invention of the above form, the laser beam has a line beam shape on an irradiation surface with respect to the object to be processed.
  • the object to be processed is a non-single crystal semiconductor
  • the laser processing apparatus crystallizes the non-single crystal semiconductor. It is characterized by that.
  • the invention of the laser processing apparatus of another form is characterized in that, in the present invention of the above form, the charge is removed and supplied to the second gas discharge port and the third gas discharge port.
  • the invention of the laser processing apparatus of another form is characterized in that, in the present invention of the form, the gas released from the rectifying surface is an inert gas.
  • the third gas is an inert gas in the present invention of the above aspect.
  • the first aspect of the present invention is a laser processing method for irradiating an object to be processed while relatively scanning laser light.
  • Arranging a rectifying surface at a position facing the object to be processed at the irradiation position The first gas is emitted from the rectifying surface to the irradiation region irradiated with the laser beam, and at least in the scanning direction, on both outer sides of the region of the rectifying surface from which the first gas is emitted.
  • one or both of the second gas release and the gas suction is performed.
  • a laser processing method wherein the first gas is discharged on both sides of the rectifying surface area where the first gas is released.
  • One or both of the third gas discharge and the gas suction is performed.
  • Another aspect of the invention of the laser processing method is characterized in that, in the present invention of the above aspect, the amount of suction of the gas is determined in accordance with the amount of discharge of the first gas.
  • a local atmosphere can be formed at least in the vicinity of the laser light irradiation region in the object to be processed, and the generation of turbulence can be avoided by stabilizing the gas flow. Processing by laser light irradiation can be performed in a stable atmosphere.
  • the laser processing apparatus 1 includes a processing chamber 2 and a laser light source 3 installed outside the processing chamber 2, and a laser beam 50 output from the laser light source 3 is guided to the processing chamber 2 through the optical system 4. can do.
  • the optical system 4 includes an attenuator, a lens, a mirror, and the like, and the configuration of the present invention is not particularly limited.
  • a stage 5 that can move in the left-right direction in FIG. 1 is provided, and the substrate 120 can be held by the stage 5.
  • the stage 5 is provided with stage rectifying plates 5A and 5B before and after the moving direction from the installation surface of the substrate 120.
  • the stage rectifying plates 5A and 5B are attached to the substrate 120 so that the height of the stage rectifying plates 5A and 5B substantially matches the height of the substrate 120 when the substrate 120 is installed on the installation surface. More preferably, the heights coincide with each other, or the heights of the stage rectifying plates 5A and 5B are slightly higher than the height of the substrate 120.
  • the length of the stage rectifying plates 5A and 5B is such that the stage rectifying plate 5A does not come out of the laser light transmission hole 11 even if the stage 5 moves to the substrate transfer initial position. 6 It is desirable that the length does not deviate from the laser light transmission hole 11 even if it moves to the opposite end point. Further, at each of the above positions, the stage rectifying plates 5A, 5B are at least of the laser light transmission hole 11 in the scanning direction. It is more desirable to extend to a position that reaches the entire length.
  • the relative scanning of the laser beam is performed by moving the object to be processed by the stage. However, in the present invention, the laser beam side may be moved. And both of the object to be processed may be moved.
  • a non-single crystal semiconductor film (not shown) is formed on the surface of the substrate 120.
  • the substrate 120 corresponds to the object to be processed of the present invention.
  • the stage 5 corresponds to a target object moving device, but the target object moving device is not limited to the stage, and may be, for example, a type in which the target object is moved by gas floating. There are no particular limitations on the configuration of the moving device and the moving method.
  • the side of the processing chamber 2 has an entrance / exit 7 through which the substrate 120 enters and exits, and the entrance / exit 7 is opened and closed by the operation of the door valve 6.
  • the processing chamber 2 has a laser beam introduction window 8 for introducing the laser beam 50 emitted from the optical system 4 from the outside of the processing chamber 2 into the processing chamber 2 at the top plate position.
  • a laser beam irradiation local seal box 10 is provided in the processing chamber 2 below the laser beam introduction window 8, and the laser beam is transmitted through a laser beam transmission hole 11 provided on the lower surface of the laser beam irradiation local seal box 10.
  • Light 50 is irradiated downward.
  • the laser beam 50 has a line beam shape when emitted from the optical system 4 by the optical system 4, and the laser beam transmission hole 11 has a long hole shape through which the laser beam 50 is transmitted. At this time, the end of the short axis or long axis of the laser beam 50 may be shielded by the laser beam transmitting hole 11.
  • a gas introduction hole 12 is formed in the laser light irradiation local seal box 10, and nitrogen gas is supplied from the outside of the laser light irradiation local seal box 10 through the gas introduction hole 12 into the laser light irradiation local seal box 10. be able to.
  • a rectifying plate 13 extends beyond both side walls of the laser light irradiation local seal box 10 in the moving direction of the stage 5.
  • a hole 11 is formed.
  • the laser light irradiation local seal box 10 also serves as the gas discharge part of the present invention, and the laser light transmission hole 11 also serves as the first gas discharge port.
  • a first gas discharge port may be provided separately from the laser light transmission hole 11.
  • the lower surface of the rectifying plate 13 faces the substrate 120 moved by the stage 5 and has a rectifying surface along the same.
  • the rectifying surface preferably has a distance of 10 mm or less from the substrate 120 moved by the stage 5.
  • the rectifying plate 13 has gas front and rear suction ports 15 on both outer sides of the laser beam irradiation local seal box 10 in the moving direction of the stage 5.
  • the gas front / rear suction port 15 has a long hole shape along the laser light transmission hole 11 and has a shape that exceeds both ends of the laser light transmission hole 11 in the longitudinal direction. Further, the gas front / rear suction port 15 is desirably provided at a position close to the laser light transmission hole 11.
  • the door valve 6 is operated to open the entrance 7 and the substrate 120 is introduced into the processing chamber 2 from outside the processing chamber 2 and placed on the stage 5.
  • the doorway 7 is closed by the door valve 6 as soon as the substrate 120 is placed in the processing chamber 2.
  • nitrogen gas is introduced into the laser beam irradiation local seal box 10 from the gas introduction hole 12.
  • Nitrogen gas corresponds to the first gas of the present invention. Nitrogen gas is emitted from the laser light transmission hole 11 downward.
  • the gas front / rear suction port 15 sucks gas through a pump (not shown).
  • the gas suction amount it is desirable to set the gas suction amount to an amount commensurate with the amount of gas emitted from the laser light transmission hole 11. As a result, most of the gas released from the laser beam transmitting hole 11 is sucked from the gas front / rear suction port 15 to form a stable gas flow. If the distance between the gas front / rear suction port 15 and the laser light transmission hole 11 is too small, a sufficient gas flow is not formed. If the distance is too large, it is difficult to stabilize the gas flow.
  • the stage 5 places the substrate 120 and moves rightward in FIG. 1 at a predetermined speed.
  • the stage rectifying plate 5A attached to the stage 5 reaches the gas flow position, the gas flow on the lower side is suppressed, and the gas flow from the laser light transmission hole 11 to the gas front / rear suction port 15 is further stabilized.
  • the laser light source 3 outputs a laser beam 50
  • the optical system 4 performs energy adjustment, beam shaping, homogenization of the beam-like energy intensity, and the like, and is emitted from the optical system 4 in a line beam shape.
  • the laser beam 50 having a line beam shape is introduced into the laser beam irradiation local seal box 10 through the laser beam introduction window 8 and irradiated downward through the laser beam transmission hole 11.
  • the substrate 120 is irradiated with the laser beam 50 on the lower side of the laser beam transmitting hole 11 while moving on the stage 5.
  • the laser beam 50 is scanned relative to the substrate 120.
  • the laser light irradiation region 50A is covered with nitrogen gas, and a local atmosphere in which nitrogen stably flows is formed, so that favorable laser processing is performed.
  • the stage rectifying plate 5 ⁇ / b> B is positioned for a while on the lower side of the laser light transmission hole 11, and reaches from the laser light transmission hole 11 to the front gas front / rear suction port 15. The gas flow becomes more stable and crystallization is better.
  • a non-single-crystal semiconductor film for example, an amorphous silicon film or a polycrystalline silicon film
  • a single-crystal semiconductor film is obtained by laser light irradiation. Therefore, in this embodiment, the laser beam processing apparatus can be said to be a laser beam crystallization apparatus.
  • the door 7 is opened by the door valve 6 and the processed substrate 120 can be carried out of the processing chamber.
  • the first gas discharge port has been described as having front and rear gas suction ports in the moving direction. In addition to this, in addition to this, the gas side on the side of the first gas discharge port is provided. A suction port may be provided.
  • the processing chamber 2 has a laser beam irradiation local seal box 10 and a rectifying plate 13 on the lower surface of the laser beam irradiation local seal box 10.
  • the rectifying plate 13 has a laser light transmission hole 11.
  • the rectifying surface on the lower surface side of the rectifying plate 13 is set so as to have an interval of 10 mm or less from the substrate 120 moving on the stage 5.
  • the rectifying plate 13 has the second gas discharge ports 16 for discharging the second gas on both outer sides of the laser beam irradiation local seal box 10 in the moving direction of the stage 5.
  • a third gas discharge port 17 for discharging a third gas is provided on both sides of the local seal box 10.
  • the second gas discharge port 16 has a long hole shape along the laser light transmission hole 11, and has a shape that exceeds both long ends of the laser light transmission hole 11.
  • the center of the second gas discharge port 16 is preferably provided at the end of the laser beam irradiation local seal box 10.
  • the second gas discharge port 16 has an emission angle ⁇ that is emitted to the outside with respect to the laser light transmission hole 11. It is desirable that the discharge angle ⁇ has an angle of 45 ° or more, where the vertical direction is 0 °. Thereby, gas can be discharge
  • the third gas discharge port 17 has a long hole shape along the side of the laser light transmission hole 11, and has a shape that exceeds both short ends of the laser light transmission hole 11. Furthermore, it is desirable to extend to the vicinity of the second gas discharge port 16.
  • the second gas discharge port 16 and the third gas discharge port 17 are described as discontinuous, but they may be continuous.
  • the first gas, the second gas, and the third gas may be the same type or different types.
  • the purity may be different.
  • an inert gas having high purity such as nitrogen
  • an inert gas having relatively low purity such as nitrogen
  • the second gas and the third gas is used for the second gas and the third gas.
  • the discharge amounts of the second gas and the third gas are not particularly limited, but it is desirable that the discharge amount of the second gas is larger than the discharge amount of the third gas.
  • the substrate 120 is introduced, and nitrogen gas is introduced from the gas introduction hole 12 into the laser beam irradiation local seal box 10. Nitrogen gas is emitted downward from the laser light transmission hole 11. Further, the second gas and the third gas are discharged from the second gas discharge port 16 and the third gas discharge port 17. Thereby, the influence from the outside of the atmosphere on the local atmosphere formed by the gas emitted from the laser beam transmitting hole 11 can be reduced.
  • the outside air intrudes into the processing chamber 2.
  • the release of the second gas and the third gas effectively eliminates the influence of the outside air intrusion and creates a stable local atmosphere. Can be maintained.
  • the gas since the gas is discharged from the second gas discharge port 16 at the discharge angle ⁇ directed outward, the influence from outside the atmosphere can be more reliably eliminated.
  • the third gas discharge port 17 may be provided with an outward discharge angle (> 0 degrees) to discharge gas.
  • the processing chamber 2 has a laser beam irradiation local seal box 10 and a rectifying plate 13.
  • the rectifying plate 13 has a laser light transmission hole 11.
  • the rectifying surface on the lower surface side of the rectifying plate 13 is set so as to have an interval of 10 mm or less from the substrate 120 moving on the stage 5.
  • the rectifying plate 13 is provided with gas front and rear suction ports 18 on both outer sides of the laser beam irradiation local seal box 10 in the moving direction of the stage 5, and the second gas is further provided on the outer side.
  • Each discharge port 16 is formed.
  • the laser beam irradiation local seal box 10 has third gas discharge ports 17 for discharging a third gas on both sides.
  • the gas front / rear suction port 18 and the second gas discharge port 16 have a long hole shape along the laser light transmission hole 11, and have shapes that respectively exceed the long ends of the laser light transmission hole 11. Further, it is desirable that the gas front / rear suction port 18 be close to the laser light transmission hole 11 and the second gas discharge port 16 or the third gas discharge port 17 that discharges the third gas.
  • the second gas discharge port 16 is preferably provided in the vicinity of the outer wall of the laser light irradiation local seal box 10.
  • the second gas discharge port 16 has an emission angle ⁇ 1 that is emitted to the outside with respect to the laser light transmission hole 11.
  • the discharge angle ⁇ 1 is desirably 45 degrees or more.
  • the third gas discharge port 17 has a long hole shape along the side of the laser light transmission hole 11, and has a shape that exceeds the short ends of the laser light transmission hole 11. Furthermore, it is desirable to extend to the vicinity of the second gas discharge port 16.
  • the first gas, the second gas, and the third gas may be the same type or different types. Moreover, it is the same kind of gas, and the purity may be different. For example, an inert gas having high purity (such as nitrogen) is used for the first gas, and an inert gas having relatively low purity (such as nitrogen) is used for the second gas and the third gas. May be.
  • the substrate 120 is introduced, and nitrogen gas is introduced from the gas introduction hole 12 into the laser beam irradiation local seal box 10. Nitrogen gas is emitted downward from the laser light transmission hole 11. Further, the second gas and the third gas are discharged from the second gas discharge port 16 and the third gas discharge port 17. Further, gas suction is performed at the gas front-rear suction port 18.
  • nitrogen gas is introduced into the laser beam irradiation local seal box 10 from the gas introduction hole 12. Nitrogen gas is emitted downward from the laser light transmission hole 11.
  • gas is sucked at the gas front / rear suction port 18, and the gas discharged from the laser light transmission hole 11 is sucked from the gas front / rear suction port 18, and a stable gas flow is formed.
  • the second gas and the third gas are released from the second gas discharge port 16 and the third gas discharge port 17.
  • the second gas and the third gas are released from the second gas discharge port 16 and the third gas discharge port 17.
  • the outside air intrudes, but the influence of this can be effectively eliminated and a stable local atmosphere can be maintained.
  • the gas since the gas is discharged from the second gas discharge port 16 at the discharge angle ⁇ 1 directed outward, it is possible to more reliably eliminate the influence from outside the atmosphere.
  • the third gas discharge port 17 may have an outward discharge angle (> 0 degrees).
  • a gas side suction port may be provided between the third gas discharge port 17 and the laser beam transmission hole 11.
  • the shape of the laser light irradiation local seal box is changed, and the lower surface of the laser light irradiation local seal box 20 is a rectifying surface.
  • the rectifying surface has a distance of 10 mm or less from the moving substrate 120.
  • the laser light irradiation local seal box 20 has an elongated laser light transmission hole 22 at the center of the lower surface, and has gas front and rear suction ports 23 on both outer sides of the laser light transmission hole 22 in the moving direction.
  • the gas front / rear suction port 23 communicates with a gas suction hole 23A provided in the laser light irradiation local seal box 20 through a passage passing through the wall portion of the laser light irradiation local seal box 20, and is not shown in the gas suction hole 23A. Connected to a pump.
  • the gas front / rear suction port 23 has a long hole shape along the laser light transmission hole 22 and has a shape that exceeds both long ends of the laser light transmission hole 22.
  • the gas front / rear suction port 23 is preferably provided at a position close to the laser light transmission hole 22.
  • second gas discharge ports 24 are respectively formed on both outer sides of the gas front and rear suction ports 23.
  • the second gas discharge port 24 communicates with a gas supply hole 24A provided in the laser light irradiation local seal box 20 through a passage passing through the lower wall portion of the laser light irradiation local seal box 20, and the gas supply hole 24A includes It is connected to a gas supply unit (not shown).
  • the laser beam transmitting hole 22 has a third gas discharge port for discharging a third gas on both sides.
  • the second gas discharge port 24 has a long hole shape along the laser light transmission hole 22, and has a shape that exceeds both long ends of the laser light transmission hole 22.
  • the second gas discharge port 24 is desirably provided at a position farther from the laser light transmission hole 22 than the gas front / rear suction port 23. Further, the third gas discharge port has a long hole shape along the side surface of the laser light transmission hole 22, and has a shape that exceeds both short ends of the laser light transmission hole 22.
  • nitrogen gas is introduced into the laser beam irradiation local seal box 20 from the gas introduction hole 21. Nitrogen gas is emitted downward from the laser light transmission hole 22. Further, the second gas and the third gas are released from the second gas discharge port 24 and the third gas discharge port. Further, the gas is sucked at the gas front / rear suction port 23. The gas discharged from the laser beam transmitting hole 11 is sucked by the gas front / rear suction port 23 to form a stable gas flow.
  • the second gas and the third gas are released from the second gas discharge port 24 and the third gas discharge port.
  • the lower surface of the laser light irradiation local seal box 20A is used as a rectifying surface.
  • the rectifying surface has a distance of 10 mm or less from the moving substrate 120.
  • the laser beam irradiation local seal box 20 ⁇ / b> A has a long laser beam transmission hole 22 at the center of the lower surface, and gas front and rear suction ports 23 on both outer sides of the laser beam transmission hole 22 in the moving direction.
  • the gas front / rear suction port 23 communicates with a gas suction hole 23A provided in the laser light irradiation local seal box 20A through a passage passing through the wall portion of the laser light irradiation local seal box 20, and is not shown in the gas suction hole 23A. Connected to a pump.
  • the gas front / rear suction port 23 has a long hole shape along the laser light transmission hole 22 and has a shape that exceeds both long ends of the laser light transmission hole 22.
  • second gas discharge ports 25 are respectively formed on both outer sides of the gas front and rear suction ports 23.
  • the second gas discharge port 25 communicates with a gas supply hole 25A provided in the laser light irradiation local seal box 20A through a passage passing through the lower wall portion of the laser light irradiation local seal box 20A. It is connected to a gas supply unit (not shown).
  • the laser beam transmitting hole 22 has a third gas discharge port for discharging a third gas on both sides.
  • the second gas discharge port 25 has a long hole shape along the laser light transmission hole 22, and has a shape that exceeds both long ends of the laser light transmission hole 22.
  • the second gas discharge port 25 is desirably provided at a position farther from the laser light transmission hole 22 than the gas front / rear suction port 23. Further, the third gas discharge port has a long hole shape along the side surface of the laser light transmission hole 22, and has a shape that exceeds both short ends of the laser light transmission hole 22.
  • the second gas discharge port 25 has a discharge angle inclined outward in the moving direction of the substrate 120 with respect to the laser light transmission hole 22, and the discharge angle is preferably 45 degrees or more.
  • the nitrogen gas is introduced from the gas introduction hole 21 into the laser light irradiation local seal box 20A, the nitrogen gas is released from the laser light transmission hole 22 downward. Further, the second gas and the third gas are released from the second gas outlet 25 and the third gas outlet. Further, the gas is sucked at the gas front / rear suction port 23. The gas emitted from the laser beam transmitting hole 22 is sucked by the gas front / rear suction port 23, and a stable gas flow is formed.
  • the second gas and the third gas are released from the second gas outlet 25 and the third gas outlet.
  • the influence from outside the atmosphere on the local atmosphere formed by the nitrogen gas emitted from the laser beam transmitting hole 22 and flowing to the gas front and rear suction port 23 is reduced.
  • the gas since the gas is discharged from the second gas discharge port 25 at a discharge angle directed outward, it is possible to more reliably eliminate the influence from outside the atmosphere.
  • the third gas discharge port may be provided with an outward discharge angle (> 0 degrees).
  • the following effects can be obtained. 1. Since the gas is not injected toward the substrate from the laser beam irradiation position, there is no cause for disturbing the laminar flow due to an arbitrary gas. 2. Since the rectifying plate for forming the laminar flow can be designed long without being bent, more rectified rectification can be formed. 3. Since substances generated from the irradiated object such as vapor and fine particles are discharged in one direction, they can be quickly removed from the laser light path. 4). 4. When there are many substances generated from irradiated objects such as steam and fine particles, it can be dealt with by increasing the flow velocity. 5. Removal of particles from outside 6. Reduction of stabilization time Static electricity removal
  • an arbitrary gas is allowed to flow between the object to be processed and the rectifying surface installed in parallel with the object to be processed, thereby forming a uniform flow velocity and pressure distribution by the arbitrary gas. be able to.
  • substances generated from the object to be processed such as vapor and fine particles, are discharged from the optical path of the laser beam, thereby realizing a uniform irradiation atmosphere and providing a gas ejection part on the rectifying surface. It is possible to prevent the external gas flow from entering the irradiation position without disturbing the stable atmosphere realized in.
  • the substrate is described as the object to be processed.
  • the object to be processed is not limited to the substrate.
  • the laser processing apparatus has been described as crystallizing a non-single crystal.
  • the processing content of the laser processing apparatus is not limited to this, and a flexible substrate such as a metal substrate or a plastic substrate may be used. It can also be used.
  • the gas input part B is installed around the laser light irradiation position, and the exhaust speed of the gas suction part is adjusted according to the flow rate of the inert gas flowing in the seal box in order to make the irradiation atmosphere an inert gas atmosphere. did.
  • a stable local atmosphere is formed around the irradiation region of the laser beam, and the oxygen concentration does not increase when the substrate is replaced, so that it does not take time to stabilize, and productivity can be improved.

Abstract

This invention is provided with a scan movement unit for moving a workpiece and/or laser light, a laser light irradiation unit for irradiating a workpiece with laser light, and a gas release unit for releasing at least a first gas onto an irradiation region of the workpiece irradiated with the laser light. The gas release unit has a rectification surface at the position facing the workpiece being irradiated with the laser light. The rectification surface is provided with: a first gas release port for releasing the first gas; and front and rear gas suction ports and/or a second gas release port for releasing a second gas onto the workpiece being irradiated with the laser light, provided on the two outer sides of the first gas release port in at least the scan direction.

Description

レーザ処理装置およびレーザ処理方法Laser processing apparatus and laser processing method
　この発明は、被処理体にレーザ光を照射して所望の処理を行うレーザ処理装置およびレーザ処理方法に関するものである。 The present invention relates to a laser processing apparatus and a laser processing method for performing desired processing by irradiating a target object with laser light.
　基板上のシリコン半導体膜などにレーザ光を照射してアニール処理を行う装置では、基板上で、レーザ光が照射される領域を囲む局所ガス雰囲気を形成して処理を行う装置が知られている（例えば特許文献１、２参照）。 As an apparatus for performing an annealing process by irradiating a laser beam to a silicon semiconductor film or the like on a substrate, an apparatus is known that performs a process by forming a local gas atmosphere surrounding a region irradiated with a laser beam on a substrate. (For example, refer to Patent Documents 1 and 2).
　図１２は、従来のレーザ処理装置の一例を示す図である。
　この装置では、処理室１００の天板下部にレーザ光照射局所シールボックス１１０が設けられており、レーザ光照射局所シールボックス１１０の上部天板にレーザ光導入窓１０１が設けられている。レーザ光照射局所シールボックス１１０の下面には、基板１２０の移動方向前後に伸びる整流板１１１が連続して形成されている。
　レーザ光照射局所シールボックス１１０には、窒素ガスが導入され、レーザ光照射局所シールボックス１１０の下面に設けられたレーザ光透過孔１１２を通して窒素ガスが下方に放出される。
　また、処理室１００内には、基板を保持して図示左右方向に移動可能なステージ１０２が設置されている。処理室１００の側方部には出入り口１０４が設けられており、出入り口１０４は、ゲートバルブ１０３の動作によって開閉される。 FIG. 12 is a diagram illustrating an example of a conventional laser processing apparatus.
In this apparatus, a laser beam irradiation local seal box 110 is provided in the lower part of the top plate of the processing chamber 100, and a laser light introduction window 101 is provided in the upper top plate of the laser light irradiation local seal box 110. On the lower surface of the laser light irradiation local seal box 110, a rectifying plate 111 extending in the front and rear directions of the movement of the substrate 120 is continuously formed.
Nitrogen gas is introduced into the laser beam irradiation local seal box 110, and the nitrogen gas is released downward through a laser light transmission hole 112 provided on the lower surface of the laser light irradiation local seal box 110.
In the processing chamber 100, a stage 102 that holds a substrate and is movable in the horizontal direction in the figure is installed. An entrance / exit 104 is provided at a side portion of the processing chamber 100, and the entrance / exit 104 is opened and closed by the operation of the gate valve 103.
　処理に際しては、ゲートバルブ１０３によって出入り口１０４を開けて処理室１００内に基板１２０を導入し、基板１２０の導入後、ゲートバルブ１０３で出入り口１０４を閉じる。基板１２０は、非単結晶半導体膜（図示しない）が形成されている。なお、出入り口１０４を開けた際には、外気が処理室１００内に乱入する。
　基板１２０は、ステージ１０２で保持され、ステージ１０２とともに処理室１００内を所定の速度で移動し、レーザ光透過孔１１２を通してレーザ光１３０が基板１２０に照射される。基板１２０では、レーザ光１３０の照射により、非単結晶の半導体膜が単結晶化される。レーザ光１３０の照射に際しては、レーザ光照射局所シールボックス１１０のレーザ光透過孔１１２から窒素ガスが放出され、レーザ光の照射領域を囲むように局所ガス雰囲気を形成して外気の影響をできるだけ排除している。処理済みの基板１２０を取り出す際には、ゲートバルブ１０３によって出入り口を開けて基板１２０を処理室１００外に取り出している。 In the processing, the gate valve 103 opens the entrance / exit 104 to introduce the substrate 120 into the processing chamber 100, and after the introduction of the substrate 120, the gate valve 103 closes the entrance / exit 104. The substrate 120 is formed with a non-single-crystal semiconductor film (not shown). Note that when the doorway 104 is opened, outside air intrudes into the processing chamber 100.
The substrate 120 is held by the stage 102, moves in the processing chamber 100 at a predetermined speed together with the stage 102, and the substrate 120 is irradiated with the laser light 130 through the laser light transmission hole 112. In the substrate 120, the non-single-crystal semiconductor film is single-crystallized by irradiation with the laser light 130. When irradiating the laser beam 130, nitrogen gas is released from the laser beam transmitting hole 112 of the laser beam irradiation local seal box 110, and a local gas atmosphere is formed so as to surround the irradiation region of the laser beam, thereby eliminating the influence of outside air as much as possible. is doing. When the processed substrate 120 is taken out, the gate valve 103 opens the entrance / exit and takes the substrate 120 out of the processing chamber 100.
特開２００２－２１７１２４号公報JP 2002-217124 A 特許第５４０８６７８号公報Japanese Patent No. 5408678
　上記に記載したように、従来技術では、基板に対するレーザ光の照射位置には、レーザ光軸に沿ってガスが基板に向かって噴出されている。しかし、レーザ光照射位置にガス流を噴射すると、レーザ光照射位置周辺において乱流が生じる。
　乱流を防ぐために、噴射するガス流を層流とする改良がなされているが、基板へのガス流衝突による乱流発生は避けられない。また、ガス流速を遅くし乱流を穏やかにすることも試みられているが、本来の目的である均一な雰囲気を形成することが困難になる。乱流が生じるとガス圧力や温度の乱れが発生する。その結果レーザに対する光屈折率の変化が生じレーザ光照射位置におけるレーザ強度が不均一となってレーザ光照射処理を均一に行えなくなる。また、レーザ光照射により、半導体膜（例えばＳｉ膜）からは構成元素（例えばＳｉ）の蒸気または微粒子が発生すると、レーザ光の光路上の光屈折率の変化をもたらしたり、レーザを遮ったりする。乱流が生じている状態や流速が著しく小さい状態では、前述の蒸気や微粒子などの被照射物から発生する物質をレーザ光路上から排出することが困難である。この課題は、本発明のガス吸引口に対応するものである。
　さらに、レーザ光の照射位置周辺において、基板の搬入・搬出する際に安定化された雰囲気が外部のガス流により乱れる問題がある。この課題は、本発明の第２または第３ガスの放出口に対応するものである。 As described above, in the prior art, gas is ejected toward the substrate along the laser optical axis at the position where the substrate is irradiated with laser light. However, when a gas flow is ejected to the laser light irradiation position, turbulence occurs around the laser light irradiation position.
In order to prevent the turbulent flow, the gas flow to be injected has been improved to be a laminar flow. In addition, attempts have been made to slow down the gas flow rate and reduce the turbulent flow, but it is difficult to form a uniform atmosphere that is the original purpose. When turbulent flow occurs, turbulence of gas pressure and temperature occurs. As a result, the optical refractive index changes with respect to the laser, the laser intensity at the laser light irradiation position becomes non-uniform, and the laser light irradiation processing cannot be performed uniformly. Further, when vapor or fine particles of a constituent element (for example, Si) is generated from the semiconductor film (for example, Si film) by laser light irradiation, it causes a change in the refractive index on the optical path of the laser beam or blocks the laser. . In a state where turbulent flow is generated or a state where the flow velocity is extremely small, it is difficult to discharge substances generated from the irradiated object such as the vapor and fine particles from the laser beam path. This problem corresponds to the gas suction port of the present invention.
Further, there is a problem that the atmosphere stabilized when the substrate is carried in / out around the irradiation position of the laser beam is disturbed by an external gas flow. This problem corresponds to the second or third gas discharge port of the present invention.
　この発明は、上記のような従来のものの課題を解決するためになされたもので、ガス流の乱流を防止して、均一な雰囲気を任意のガス種により維持させることを可能にするレーザ処理装置およびレーザ処理方法を提供することを目的の一つとする。 The present invention has been made in order to solve the above-described problems of the prior art, and prevents laser gas turbulence and allows a uniform atmosphere to be maintained by an arbitrary gas type. An object is to provide an apparatus and a laser processing method.
　すなわち、本発明のレーザ処理装置のうち、第１の形態の本発明は、
　被処理体に対し、レーザ光を相対的に走査しつつ照射するレーザ処理装置において、
　前記被処理体および前記レーザ光の一方または両方を移動させる走査移動部と、
　前記被処理体に前記レーザ光を照射するレーザ光照射部と、
　前記被処理体において前記レーザ光が照射されている照射領域に対し、少なくとも第１のガスを放出するガス放出部と、を備え、
　前記ガス放出部は、レーザ光照射中の前記被処理体と対面する位置に整流面を有し、該整流面には、前記第１のガスが放出される第１ガス放出口と、少なくとも前記走査方向において、前記第１のガス放出口の両外側で、レーザ光照射中の前記被処理体に対し第２のガスを放出する第２ガス放出口およびガス前後吸引口の一方または両方が設けられていることを特徴とする。 That is, of the laser processing apparatus of the present invention, the first aspect of the present invention is
In a laser processing apparatus for irradiating a target object while relatively scanning laser light,
A scanning moving unit for moving one or both of the object to be processed and the laser beam;
A laser beam irradiation unit that irradiates the object to be processed with the laser beam;
A gas discharge unit that discharges at least a first gas to an irradiation region irradiated with the laser beam in the object to be processed;
The gas discharge portion has a rectifying surface at a position facing the object to be processed during laser light irradiation, and the rectifying surface includes at least the first gas discharge port from which the first gas is discharged, In the scanning direction, one or both of a second gas discharge port and a gas front / rear suction port for discharging a second gas to the object being irradiated with laser light are provided on both outer sides of the first gas discharge port. It is characterized by being.
　さらに、他の形態のレーザ処理装置の発明は、前記形態の本発明において、
　前記第１ガス放出口は、前記照射領域が覆われる範囲に第１のガスが放出されるものであることを特徴とする。 Furthermore, the invention of the laser processing apparatus of another form is the present invention of the above form,
The first gas discharge port is characterized in that the first gas is discharged in a range where the irradiation region is covered.
　さらに、他の形態のレーザ処理装置の発明は、前記形態の本発明において、前記第２ガス放出口および前記ガス前後吸引口は、前記照射領域の幅方向形状を両側で超える形状を有していることを特徴とする。 Furthermore, in another aspect of the invention of the laser processing apparatus according to the aspect of the invention, the second gas discharge port and the gas front-rear suction port have shapes that exceed the shape in the width direction of the irradiation region on both sides. It is characterized by being.
　他の形態のレーザ処理装置の発明は、前記形態の本発明において、
　前記ガス放出部は、前記走査方向の両側方側で、移動する前記被処理体に対し第３のガスを放出する第３ガス放出口およびガス側方吸引口の一方または両方が設けられていることを特徴とする。 The invention of the laser processing apparatus of another form is the present invention of the above form,
The gas discharge part is provided with one or both of a third gas discharge port and a gas side suction port for discharging a third gas to the object to be moved on both sides in the scanning direction. It is characterized by that.
　さらに、他の形態のレーザ処理装置の発明は、前記形態の本発明において、前記第３ガス放出口および前記ガス側方吸引口は、前記照射領域の走査方向における形状を両側で超える形状を有していることを特徴とする。 Furthermore, in another aspect of the present invention, the third gas discharge port and the gas side suction port have shapes that exceed the shape of the irradiation region in the scanning direction on both sides. It is characterized by that.
　さらに、他の形態のレーザ処理装置の発明は、前記形態の本発明において、前記ガス放出部は、前記第１ガス放出口の両外側の一方または両方で、前記第２ガス放出口と前記ガス前後吸引口とを有し、前記ガス前後吸引口が前記第２ガス放出口の内側に位置していることを特徴とする。 Further, the invention of the laser processing apparatus of another form is the present invention of the form described above, wherein the gas discharge part is one or both of the outer sides of the first gas discharge port, and the second gas discharge port and the gas. A front and rear suction port, and the gas front and rear suction port is located inside the second gas discharge port.
　さらに、他の形態のレーザ処理装置の発明は、前記形態の本発明において、前記第２ガス放出口が、第１ガス放出口を基準にして、下方外側に向けて第２のガスを放出する所定の放出角を有することを特徴とする。 Furthermore, the invention of the laser processing apparatus of another form is the invention of the above form, wherein the second gas discharge port emits the second gas toward the lower outside with respect to the first gas discharge port. It has a predetermined discharge angle.
　さらに、他の形態のレーザ処理装置の発明は、前記形態の本発明において、前記放出角が４５度以上であることを特徴とする。 Furthermore, another aspect of the invention of the laser processing apparatus according to the present invention of the above aspect is characterized in that the emission angle is 45 degrees or more.
　さらに、他の形態のレーザ処理装置の発明は、前記形態の本発明において、前記整流面は、移動する被処理体との間の間隔が１０ｍｍ以下であることを特徴とする。 Further, the invention of the laser processing apparatus of another form is characterized in that, in the present invention of the above form, the distance between the rectifying surface and the object to be moved is 10 mm or less.
　さらに、他の形態のレーザ処理装置の発明は、前記形態の本発明において、前記整流面は、前記第１放出口を基準にして、走査方向において、照射面上のレーザ光の長さより１０ｍｍ以上の長さで伸長していることを特徴とする。 Furthermore, in another aspect of the present invention, the rectifying surface is 10 mm or more longer than the length of the laser beam on the irradiation surface in the scanning direction with respect to the first emission port. It is characterized by extending at a length of.
　さらに、他の形態のレーザ処理装置の発明は、前記形態の本発明において、前記第２ガス放出口は、第１ガス放出口を基準にして、走査方向で１ｍｍ以上離れた位置に設けられていることを特徴とする。 Furthermore, in another aspect of the invention of the laser processing apparatus according to the aspect of the invention, the second gas discharge port is provided at a position separated by 1 mm or more in the scanning direction with respect to the first gas discharge port. It is characterized by being.
　さらに、他の形態のレーザ処理装置の発明は、前記形態の本発明において、前記レーザ光は、前記被処理体に対する照射面上において、ラインビーム形状を有することを特徴とする。 Furthermore, the invention of the laser processing apparatus of another form is characterized in that, in the present invention of the above form, the laser beam has a line beam shape on an irradiation surface with respect to the object to be processed.
　さらに、他の形態のレーザ処理装置の発明は、前記形態の本発明において、前記被処理体が非単結晶半導体であり、前記レーザ処理装置は、前記非単結晶半導体を結晶化するものであることを特徴とする。 Furthermore, in another aspect of the present invention, the object to be processed is a non-single crystal semiconductor, and the laser processing apparatus crystallizes the non-single crystal semiconductor. It is characterized by that.
　さらに、他の形態のレーザ処理装置の発明は、前記形態の本発明において、除電されて第２ガス放出口および第３ガス放出口に供給されるものであることを特徴とする。 Furthermore, the invention of the laser processing apparatus of another form is characterized in that, in the present invention of the above form, the charge is removed and supplied to the second gas discharge port and the third gas discharge port.
　さらに、他の形態のレーザ処理装置の発明は、前記形態の本発明において、前記整流面から放出されるガスが不活性ガスであることを特徴とする。 Furthermore, the invention of the laser processing apparatus of another form is characterized in that, in the present invention of the form, the gas released from the rectifying surface is an inert gas.
　さらに、他の形態のレーザ処理装置の発明は、前記形態の本発明において、前記第３のガスが不活性ガスであることを特徴とする。 Furthermore, in another aspect of the present invention, the third gas is an inert gas in the present invention of the above aspect.
　本発明のレーザ処理方法のうち、第１の形態の本発明は、被処理体に対し、レーザ光を相対的に走査しつつ照射するレーザ処理方法において、
　照射位置にある前記被処理体と対面する位置に整流面を配し、
　該整流面から、前記レーザ光が照射されている照射領域に対し、第１のガスを放出するとともに、少なくとも走査方向において、第１のガスが放出されている前記整流面の区域の両外側で、第２のガスの放出およびガスの吸引の一方または両方を行うことを特徴とする。 Among the laser processing methods of the present invention, the first aspect of the present invention is a laser processing method for irradiating an object to be processed while relatively scanning laser light.
Arranging a rectifying surface at a position facing the object to be processed at the irradiation position,
The first gas is emitted from the rectifying surface to the irradiation region irradiated with the laser beam, and at least in the scanning direction, on both outer sides of the region of the rectifying surface from which the first gas is emitted. In addition, one or both of the second gas release and the gas suction is performed.
　他の形態のレーザ処理方法の発明は、前記形態の本発明において、前記第１のガスの放出の際に、第１のガスが放出されている前記整流面の区域の両側方側で、さらに第３のガスの放出およびガスの吸引の一方または両方を行うことを特徴とする。 According to another aspect of the present invention, there is provided a laser processing method according to the present invention, wherein the first gas is discharged on both sides of the rectifying surface area where the first gas is released. One or both of the third gas discharge and the gas suction is performed.
　他の形態のレーザ処理方法の発明は、前記形態の本発明において、前記ガスの吸引は、前記第１のガスの放出量に合わせて吸引量が定められていることを特徴とする。 Another aspect of the invention of the laser processing method is characterized in that, in the present invention of the above aspect, the amount of suction of the gas is determined in accordance with the amount of discharge of the first gas.
　すなわち、本発明によれば、被処理体における、少なくともレーザ光の照射領域付近に、ガスによる局所雰囲気を形成でき、かつガスの流れを安定させて乱流が生ずるのを回避することができ、安定した雰囲気でレーザ光照射による処理を行うことができる。 That is, according to the present invention, a local atmosphere can be formed at least in the vicinity of the laser light irradiation region in the object to be processed, and the generation of turbulence can be avoided by stabilizing the gas flow. Processing by laser light irradiation can be performed in a stable atmosphere.
本発明の一実施形態のレーザ処理装置の概略を示す正面図である。It is a front view which shows the outline of the laser processing apparatus of one Embodiment of this invention. 同じく、レーザ光照射局所シールボックス周辺の構成を示す拡大した正面図である。Similarly, it is the enlarged front view which shows the structure of a laser beam irradiation local seal box periphery. 同じく、レーザ光照射局所シールボックスの底面を示す図である。Similarly, it is a figure which shows the bottom face of a laser beam irradiation local seal box. 本発明の他の一実施形態のレーザ処理装置の概略を示す正面図である。It is a front view which shows the outline of the laser processing apparatus of other one Embodiment of this invention. 同じく、レーザ光照射局所シールボックス周辺の構成を示す拡大した正面図である。Similarly, it is the enlarged front view which shows the structure of a laser beam irradiation local seal box periphery. 同じく、レーザ光照射局所シールボックスの底面を示す図である。Similarly, it is a figure which shows the bottom face of a laser beam irradiation local seal box. 本発明のさらに他の実施形態のレーザ処理装置の概略を示す正面図である。It is a front view which shows the outline of the laser processing apparatus of further another embodiment of this invention. 同じく、レーザ光照射局所シールボックス周辺の構成を示す拡大した正面図である。Similarly, it is the enlarged front view which shows the structure of a laser beam irradiation local seal box periphery. 同じく、レーザ光照射局所シールボックスの底面を示す図である。Similarly, it is a figure which shows the bottom face of a laser beam irradiation local seal box. 本発明のさらに他の実施形態のレーザ処理装置に設けられたレーザ光照射局所シールボックスを示す図である。It is a figure which shows the laser beam irradiation local seal box provided in the laser processing apparatus of further another embodiment of this invention. 本発明のさらに他の実施形態のレーザ処理装置に設けられたレーザ光照射局所シールボックスを示す図である。It is a figure which shows the laser beam irradiation local seal box provided in the laser processing apparatus of further another embodiment of this invention. 従来のレーザ処理装置の概略を示す正面図であって、基板導入時と基板設置後のレーザ光処理時の状態を示す図である。It is a front view which shows the outline of the conventional laser processing apparatus, Comprising: It is a figure which shows the state at the time of the laser beam processing after board | substrate introduction and after board | substrate installation.
（実施形態１）
　以下に、本発明の一実施形態を図１～３に基づいて説明する。
　レーザ処理装置１は、処理室２と処理室２外に設置されたレーザ光源３とを有しており、レーザ光源３から出力されたレーザ光５０を、光学系４を通して処理室２に導波することができる。光学系４には、アテニュエータ、レンズ、ミラーなどを備えており、本願発明としてはその構成が特に限定されるものではない。 (Embodiment 1)
In the following, an embodiment of the present invention will be described with reference to FIGS.
The laser processing apparatus 1 includes a processing chamber 2 and a laser light source 3 installed outside the processing chamber 2, and a laser beam 50 output from the laser light source 3 is guided to the processing chamber 2 through the optical system 4. can do. The optical system 4 includes an attenuator, a lens, a mirror, and the like, and the configuration of the present invention is not particularly limited.
　処理室２内には、図１で左右方向に移動可能なステージ５を有しており、該ステージ５によって基板１２０を保持することができる。ステージ５は、基板１２０の設置面から移動方向前後にステージ整流板５Ａ、５Ｂが設けられている。ステージ整流板５Ａ、５Ｂは、設置面に基板１２０を設置した際に、ステージ整流板５Ａ、５Ｂの高さが基板１２０の高さに略一致するように基板１２０に取り付けられている。より望ましくは、前記高さが互いに一致するか、ステージ整流板５Ａ、５Ｂの高さが基板１２０の高さよりも僅かに高いものとすることができる。ステージ整流板５Ａ、５Ｂの長さは、ステージ整流板５Ａにおいて、ステージ５が基板搬送初期位置に移動してもレーザ光透過孔１１から外れない長さ、ステージ整流板５Ｂで、ステージ５がドアバルブ６反対側終点まで動いてもレーザ光透過孔１１から外れない長さとするのが望ましく、さらには、上記各位置で、走査方向において、ステージ整流板５Ａ、５Ｂが、少なくともレーザ光透過孔１１の長さ全体に至る位置まで伸長しているのが一層望ましい。
　なお、この実施形態では、レーザ光の相対的な走査は、ステージによって被処理体を移動させることにより行うが、本発明としてはレーザ光側を移動させるものであってもよく、また、レーザ光と被処理体の両方を移動させるものであってもよい。 In the processing chamber 2, a stage 5 that can move in the left-right direction in FIG. 1 is provided, and the substrate 120 can be held by the stage 5. The stage 5 is provided with stage rectifying plates 5A and 5B before and after the moving direction from the installation surface of the substrate 120. The stage rectifying plates 5A and 5B are attached to the substrate 120 so that the height of the stage rectifying plates 5A and 5B substantially matches the height of the substrate 120 when the substrate 120 is installed on the installation surface. More preferably, the heights coincide with each other, or the heights of the stage rectifying plates 5A and 5B are slightly higher than the height of the substrate 120. The length of the stage rectifying plates 5A and 5B is such that the stage rectifying plate 5A does not come out of the laser light transmission hole 11 even if the stage 5 moves to the substrate transfer initial position. 6 It is desirable that the length does not deviate from the laser light transmission hole 11 even if it moves to the opposite end point. Further, at each of the above positions, the stage rectifying plates 5A, 5B are at least of the laser light transmission hole 11 in the scanning direction. It is more desirable to extend to a position that reaches the entire length.
In this embodiment, the relative scanning of the laser beam is performed by moving the object to be processed by the stage. However, in the present invention, the laser beam side may be moved. And both of the object to be processed may be moved.
　基板１２０には、表面側に図示しない非単結晶半導体膜が形成されている。この実施形態では、基板１２０は、本発明の被処理体に相当する。ステージ５は、被処理体移動装置に相当するが、被処理体移動装置は、ステージに限定されるものではなく、例えば、被処理体をガス浮上させて移動させるようなものでもよく、本発明としては移動装置の構成、移動方法は特に限定されない。
　また、処理室２の側方には、基板１２０を出入りさせる出入り口７を有し、出入り口７の開閉はドアバルブ６の動作によって行う。 A non-single crystal semiconductor film (not shown) is formed on the surface of the substrate 120. In this embodiment, the substrate 120 corresponds to the object to be processed of the present invention. The stage 5 corresponds to a target object moving device, but the target object moving device is not limited to the stage, and may be, for example, a type in which the target object is moved by gas floating. There are no particular limitations on the configuration of the moving device and the moving method.
In addition, the side of the processing chamber 2 has an entrance / exit 7 through which the substrate 120 enters and exits, and the entrance / exit 7 is opened and closed by the operation of the door valve 6.
　また、処理室２は、光学系４から出射されたレーザ光５０を処理室２外から処理室２内に導入するレーザ光導入窓８を天板位置に有している。
　レーザ光導入窓８の下方側の処理室２内には、レーザ光照射局所シールボックス１０が設けられており、レーザ光照射局所シールボックス１０の下面に設けられたレーザ光透過孔１１を通して、レーザ光５０が下方側に照射される。レーザ光５０は、光学系４によって光学系４から出射される際にはラインビーム形状を有しており、レーザ光透過孔１１は、レーザ光５０が透過する長孔形状を有している。この際に、レーザ光５０の短軸または長軸の端部をレーザ光透過孔１１で遮蔽するようにしてもよい。 Further, the processing chamber 2 has a laser beam introduction window 8 for introducing the laser beam 50 emitted from the optical system 4 from the outside of the processing chamber 2 into the processing chamber 2 at the top plate position.
A laser beam irradiation local seal box 10 is provided in the processing chamber 2 below the laser beam introduction window 8, and the laser beam is transmitted through a laser beam transmission hole 11 provided on the lower surface of the laser beam irradiation local seal box 10. Light 50 is irradiated downward. The laser beam 50 has a line beam shape when emitted from the optical system 4 by the optical system 4, and the laser beam transmission hole 11 has a long hole shape through which the laser beam 50 is transmitted. At this time, the end of the short axis or long axis of the laser beam 50 may be shielded by the laser beam transmitting hole 11.
　また、レーザ光照射局所シールボックス１０には、ガス導入孔１２が形成されており、レーザ光照射局所シールボックス１０外からガス導入孔１２を通してレーザ光照射局所シールボックス１０内に窒素ガスを供給することができる。
　レーザ光照射局所シールボックス１０の下面には、ステージ５の移動方向において、レーザ光照射局所シールボックス１０の両側壁を超えた整流板１３が伸長しており、該整流板１３に、レーザ光透過孔１１が形成されている。レーザ光照射局所シールボックス１０は、本発明のガス放出部を兼用し、レーザ光透過孔１１は、第１ガス放出口を兼用する。レーザ光透過孔１１とは別に第１ガス放出口を設けたものであってもよい。 Further, a gas introduction hole 12 is formed in the laser light irradiation local seal box 10, and nitrogen gas is supplied from the outside of the laser light irradiation local seal box 10 through the gas introduction hole 12 into the laser light irradiation local seal box 10. be able to.
On the lower surface of the laser beam irradiation local seal box 10, a rectifying plate 13 extends beyond both side walls of the laser light irradiation local seal box 10 in the moving direction of the stage 5. A hole 11 is formed. The laser light irradiation local seal box 10 also serves as the gas discharge part of the present invention, and the laser light transmission hole 11 also serves as the first gas discharge port. A first gas discharge port may be provided separately from the laser light transmission hole 11.
　整流板１３の下面は、ステージ５によって移動する基板１２０と対面し、かつ沿った整流面を有している。整流面は、ステージ５によって移動する基板１２０と１０ｍｍ以下の間隔を有しているのが望ましい。
　整流板１３には、ステージ５の移動方向において、レーザ光照射局所シールボックス１０の両外側にそれぞれガス前後吸引口１５を有している。ガス前後吸引口１５は、レーザ光透過孔１１に沿った長孔形状を有しており、レーザ光透過孔１１の長尺方向両端をそれぞれ超える形状を有している。また、ガス前後吸引口１５はレーザ光透過孔１１に近い位置に設けることが望ましい。 The lower surface of the rectifying plate 13 faces the substrate 120 moved by the stage 5 and has a rectifying surface along the same. The rectifying surface preferably has a distance of 10 mm or less from the substrate 120 moved by the stage 5.
The rectifying plate 13 has gas front and rear suction ports 15 on both outer sides of the laser beam irradiation local seal box 10 in the moving direction of the stage 5. The gas front / rear suction port 15 has a long hole shape along the laser light transmission hole 11 and has a shape that exceeds both ends of the laser light transmission hole 11 in the longitudinal direction. Further, the gas front / rear suction port 15 is desirably provided at a position close to the laser light transmission hole 11.
　次に、レーザ処理装置１における動作について説明する。
　処理の開始に伴って、ドアバルブ６を動作させて出入り口７を開口し、処理室２外から基板１２０を処理室２内に導入し、ステージ５上に設置する。基板１２０の導入に際しては、基板１２０を処理室２内に収めると直ちにドアバルブ６によって出入り口７を閉鎖する。
　基板１２０の導入とともに、ガス導入孔１２からレーザ光照射局所シールボックス１０内に窒素ガスを導入する。窒素ガスは、本発明の第１のガスに相当する。窒素ガスは、レーザ光透過孔１１から下方側に向けて窒素ガスを放出する。また、ガス前後吸引口１５では、図示しないポンプなどを介してガスの吸引がなされる。ガスの吸引量は、レーザ光透過孔１１から放出されるガス量に見合う量に設定するのが望ましい。これによりレーザ光透過孔１１から放出するガスの殆どがガス前後吸引口１５から吸引されて、安定したガスの流れが形成される。なお、ガス前後吸引口１５とレーザ光透過孔１１との距離は、あまりに小さいと、十分なガスの流れが形成されず、前記距離があまりに大きいと、ガス流の安定化が難しくなる。 Next, the operation in the laser processing apparatus 1 will be described.
With the start of processing, the door valve 6 is operated to open the entrance 7 and the substrate 120 is introduced into the processing chamber 2 from outside the processing chamber 2 and placed on the stage 5. When the substrate 120 is introduced, the doorway 7 is closed by the door valve 6 as soon as the substrate 120 is placed in the processing chamber 2.
Along with the introduction of the substrate 120, nitrogen gas is introduced into the laser beam irradiation local seal box 10 from the gas introduction hole 12. Nitrogen gas corresponds to the first gas of the present invention. Nitrogen gas is emitted from the laser light transmission hole 11 downward. The gas front / rear suction port 15 sucks gas through a pump (not shown). It is desirable to set the gas suction amount to an amount commensurate with the amount of gas emitted from the laser light transmission hole 11. As a result, most of the gas released from the laser beam transmitting hole 11 is sucked from the gas front / rear suction port 15 to form a stable gas flow. If the distance between the gas front / rear suction port 15 and the laser light transmission hole 11 is too small, a sufficient gas flow is not formed. If the distance is too large, it is difficult to stabilize the gas flow.
　一方、ステージ５は、基板１２０を載置して、図１で右方向に所定速度で移動する。
　ステージ５に取り付けられたステージ整流板５Ａがガスの流れ位置に達すると、下方側のガスの流れが抑制されて、レーザ光透過孔１１からガス前後吸引口１５に至るガスの流れが一層安定化する。また、レーザ光源３では、レーザ光５０が出力され、光学系４でエネルギー調整、ビーム成形、ビーム状のエネルギー強度の均一化などがなされ、ラインビーム形状にして光学系４から出射される。ラインビーム形状としたレーザ光５０は、レーザ光導入窓８を通してレーザ光照射局所シールボックス１０内に導入され、レーザ光透過孔１１を通して下方側に照射される。 On the other hand, the stage 5 places the substrate 120 and moves rightward in FIG. 1 at a predetermined speed.
When the stage rectifying plate 5A attached to the stage 5 reaches the gas flow position, the gas flow on the lower side is suppressed, and the gas flow from the laser light transmission hole 11 to the gas front / rear suction port 15 is further stabilized. To do. Further, the laser light source 3 outputs a laser beam 50, and the optical system 4 performs energy adjustment, beam shaping, homogenization of the beam-like energy intensity, and the like, and is emitted from the optical system 4 in a line beam shape. The laser beam 50 having a line beam shape is introduced into the laser beam irradiation local seal box 10 through the laser beam introduction window 8 and irradiated downward through the laser beam transmission hole 11.
　基板１２０は、ステージ５で移動しつつレーザ光透過孔１１の下方側にレーザ光５０が照射される。ステージ５が移動することで、レーザ光５０は、基板１２０に対し相対的な走査がなされる。この際には、基板１２０上において、レーザ光の照射領域５０Ａは窒素ガスで覆われるとともに、窒素が安定して流れる局所雰囲気が形成されて良好なレーザ処理がなされる。また、基板１２０がレーザ光透過孔１１を通過した後、レーザ光透過孔１１の下方側にはステージ整流板５Ｂがしばらく位置し、レーザ光透過孔１１から前方側のガス前後吸引口１５に至るガスの流れがより安定した状態になり、結晶化がより良好になされる。
　この実施形態では、非単結晶の半導体膜（例えば非晶質シリコン膜や多結晶シリコン膜など）が形成されており、レーザ光の照射により単結晶化された半導体膜が得られる。したがって、この実施形態では、レーザ光処理装置は、レーザ光結晶化装置といえる。
　処理後は、ドアバルブ６によって出入り口７を開けて処理済みの基板１２０を処理室外に搬出することができる。
　なお、この実施形態では、第１ガス放出口に対し、移動方向において前後にガス前後吸引口を有するものとして説明したが、さらに、これに加えて第１ガス放出口の側方のガス側方吸引口を備えるものとしてもよい。 The substrate 120 is irradiated with the laser beam 50 on the lower side of the laser beam transmitting hole 11 while moving on the stage 5. As the stage 5 moves, the laser beam 50 is scanned relative to the substrate 120. At this time, on the substrate 120, the laser light irradiation region 50A is covered with nitrogen gas, and a local atmosphere in which nitrogen stably flows is formed, so that favorable laser processing is performed. After the substrate 120 passes through the laser light transmission hole 11, the stage rectifying plate 5 </ b> B is positioned for a while on the lower side of the laser light transmission hole 11, and reaches from the laser light transmission hole 11 to the front gas front / rear suction port 15. The gas flow becomes more stable and crystallization is better.
In this embodiment, a non-single-crystal semiconductor film (for example, an amorphous silicon film or a polycrystalline silicon film) is formed, and a single-crystal semiconductor film is obtained by laser light irradiation. Therefore, in this embodiment, the laser beam processing apparatus can be said to be a laser beam crystallization apparatus.
After processing, the door 7 is opened by the door valve 6 and the processed substrate 120 can be carried out of the processing chamber.
In this embodiment, the first gas discharge port has been described as having front and rear gas suction ports in the moving direction. In addition to this, in addition to this, the gas side on the side of the first gas discharge port is provided. A suction port may be provided.
（実施形態２）
　次に、他の実施形態のレーザ処理装置１Ａを図４～図６に基づいて説明する。
　なお、この実施形態２で、前記実施形態と同様の構成を有するものについては同一の符号を付してその説明を省略または簡略化する。
　この実施形態２においても処理室２には、レーザ光照射局所シールボックス１０を有しており、レーザ光照射局所シールボックス１０の下面には整流板１３を有している。また、整流板１３には、レーザ光透過孔１１を有している。この実施形態でも、整流板１３の下面側の整流面は、ステージ５で移動する基板１２０と１０ｍｍ以下の間隔になるように設定されている。 (Embodiment 2)
Next, a laser processing apparatus 1A according to another embodiment will be described with reference to FIGS.
In addition, in this Embodiment 2, what has the same structure as the said embodiment attaches | subjects the same code | symbol, and the description is abbreviate | omitted or simplified.
Also in the second embodiment, the processing chamber 2 has a laser beam irradiation local seal box 10 and a rectifying plate 13 on the lower surface of the laser beam irradiation local seal box 10. The rectifying plate 13 has a laser light transmission hole 11. Also in this embodiment, the rectifying surface on the lower surface side of the rectifying plate 13 is set so as to have an interval of 10 mm or less from the substrate 120 moving on the stage 5.
　実施形態２では、整流板１３には、ステージ５の移動方向において、レーザ光照射局所シールボックス１０の両外側にそれぞれ第２のガスを放出する第２ガス放出口１６を有し、レーザ光照射局所シールボックス１０の両側方側にそれぞれ第３のガスを放出する第３ガス放出口１７を有している。
　第２ガス放出口１６は、レーザ光透過孔１１に沿った長孔形状を有しており、レーザ光透過孔１１の長尺両端をそれぞれ超える形状を有している。また、第２ガス放出口１６の中心がレーザ光照射局所シールボックス１０の端に設けることが望ましい。 In the second embodiment, the rectifying plate 13 has the second gas discharge ports 16 for discharging the second gas on both outer sides of the laser beam irradiation local seal box 10 in the moving direction of the stage 5. A third gas discharge port 17 for discharging a third gas is provided on both sides of the local seal box 10.
The second gas discharge port 16 has a long hole shape along the laser light transmission hole 11, and has a shape that exceeds both long ends of the laser light transmission hole 11. The center of the second gas discharge port 16 is preferably provided at the end of the laser beam irradiation local seal box 10.
　また、第２ガス放出口１６は、レーザ光透過孔１１を基準にして、外側に放出する放出角θを有するのが望ましい。放出角θは、鉛直方向を０度として、４５度以上の角度を有するのが望ましい。これにより、外側に向けてガスを放出することができる。
　また、第３ガス放出口１７は、レーザ光透過孔１１の側方に沿った長孔形状を有しており、レーザ光透過孔１１の短尺両端をそれぞれ超える形状を有している。さらには、第２ガス放出口１６の近傍にまで伸長しているのが望ましい。なお、この実施形態では、第２ガス放出口１６と第３ガス放出口１７とは非連続なものとして説明しているが、これらが連続した形状とすることも可能である。
　また、第１のガス、第２のガス、第３のガスは、同じ種類でもよく、異なる種類であってもよい。また、同種のガスであって、純度が異なるものであってもよい。例えば、第１のガスに純度の高い不活性ガス（窒素など）を使用し、第２のガス、第３のガスに相対的に純度の低い不活性ガス（窒素など）を使用するものであってもよい。第２のガス、第３のガスは、除電した後に、レーザ光照射局所シールボックス１０に供給するのが望ましい（以下も同様である）。また、第２のガスと第３のガスの放出量は特に限定されるものではないが、第２のガスの放出量を第３のガスの放出量よりも多くするのが望ましい。 Further, it is desirable that the second gas discharge port 16 has an emission angle θ that is emitted to the outside with respect to the laser light transmission hole 11. It is desirable that the discharge angle θ has an angle of 45 ° or more, where the vertical direction is 0 °. Thereby, gas can be discharge | released toward the outer side.
Further, the third gas discharge port 17 has a long hole shape along the side of the laser light transmission hole 11, and has a shape that exceeds both short ends of the laser light transmission hole 11. Furthermore, it is desirable to extend to the vicinity of the second gas discharge port 16. In this embodiment, the second gas discharge port 16 and the third gas discharge port 17 are described as discontinuous, but they may be continuous.
The first gas, the second gas, and the third gas may be the same type or different types. Moreover, it is the same kind of gas, and the purity may be different. For example, an inert gas having high purity (such as nitrogen) is used for the first gas, and an inert gas having relatively low purity (such as nitrogen) is used for the second gas and the third gas. May be. It is desirable to supply the second gas and the third gas to the laser beam irradiation local seal box 10 after static elimination (the same applies to the following). Further, the discharge amounts of the second gas and the third gas are not particularly limited, but it is desirable that the discharge amount of the second gas is larger than the discharge amount of the third gas.
　次に、レーザ処理装置１Ａにおける動作について説明する。
　前記実施形態と同様に、基板１２０を導入するとともに、ガス導入孔１２からレーザ光照射局所シールボックス１０内に窒素ガスを導入する。窒素ガスは、レーザ光透過孔１１から下方側に向けて放出される。また、第２ガス放出口１６および第３ガス放出口１７から、第２のガスおよび第３のガスが放出される。これにより、レーザ光透過孔１１から放出するガスによって形成される局所雰囲気内に雰囲気外からの影響が及ぶのを低減することができる。 Next, the operation in the laser processing apparatus 1A will be described.
Similarly to the above-described embodiment, the substrate 120 is introduced, and nitrogen gas is introduced from the gas introduction hole 12 into the laser beam irradiation local seal box 10. Nitrogen gas is emitted downward from the laser light transmission hole 11. Further, the second gas and the third gas are discharged from the second gas discharge port 16 and the third gas discharge port 17. Thereby, the influence from the outside of the atmosphere on the local atmosphere formed by the gas emitted from the laser beam transmitting hole 11 can be reduced.
　特に、基板１２０を処理室２内に導入した際に、外気が乱入するが、第２のガスおよび第３のガスの放出によって、外気乱入による影響を効果的に排除して安定した局所雰囲気を維持することができる。
　また、第２ガス放出口１６からは、外側に向けた放出角θでガスが放出されるので、雰囲気外からの影響をより確実に排除することができる。なお、第３ガス放出口１７においても同様に外側に向けた放出角（＞０度）を設けてガスを放出するようにしてもよい。 In particular, when the substrate 120 is introduced into the processing chamber 2, the outside air intrudes into the processing chamber 2. However, the release of the second gas and the third gas effectively eliminates the influence of the outside air intrusion and creates a stable local atmosphere. Can be maintained.
Further, since the gas is discharged from the second gas discharge port 16 at the discharge angle θ directed outward, the influence from outside the atmosphere can be more reliably eliminated. Similarly, the third gas discharge port 17 may be provided with an outward discharge angle (> 0 degrees) to discharge gas.
（実施形態３）
　次に、他の実施形態のレーザ処理装置１Ｂを図７～図９に基づいて説明する。
　なお、この実施形態３で前記実施形態１、２と同様の構成を有するものについては同一の符号を付してその説明を省略または簡略化する。
　この実施形態においても処理室２には、レーザ光照射局所シールボックス１０を有しており、整流板１３を有している。整流板１３には、レーザ光透過孔１１を有している。この実施形態でも、整流板１３の下面側の整流面は、ステージ５で移動する基板１２０と１０ｍｍ以下の間隔になるように設定されている。 (Embodiment 3)
Next, a laser processing apparatus 1B according to another embodiment will be described with reference to FIGS.
In addition, in this Embodiment 3, what has the same structure as the said Embodiment 1, 2 is attached | subjected, and the description is abbreviate | omitted or simplified.
Also in this embodiment, the processing chamber 2 has a laser beam irradiation local seal box 10 and a rectifying plate 13. The rectifying plate 13 has a laser light transmission hole 11. Also in this embodiment, the rectifying surface on the lower surface side of the rectifying plate 13 is set so as to have an interval of 10 mm or less from the substrate 120 moving on the stage 5.
　この実施形態３では、整流板１３には、ステージ５の移動方向において、レーザ光照射局所シールボックス１０の両外側にそれぞれガス前後吸引口１８が設けられており、その外側に、さらに第２ガス放出口１６がそれぞれ形成されている。また、レーザ光照射局所シールボックス１０の両側方側にそれぞれ第３のガスを放出する第３ガス放出口１７を有している。
　ガス前後吸引口１８および第２ガス放出口１６は、レーザ光透過孔１１に沿った長孔形状を有しており、レーザ光透過孔１１の長尺両端をそれぞれ超える形状を有している。また、ガス前後吸引口１８がレーザ光透過孔１１と第２ガス放出口１６もしくは第３のガスを放出する第３ガス放出口１７に近接した方が望ましい。また、第２ガス放出口１６は、レーザ光照射局所シールボックス１０外壁に近接して設けることが望ましい。 In the third embodiment, the rectifying plate 13 is provided with gas front and rear suction ports 18 on both outer sides of the laser beam irradiation local seal box 10 in the moving direction of the stage 5, and the second gas is further provided on the outer side. Each discharge port 16 is formed. Moreover, the laser beam irradiation local seal box 10 has third gas discharge ports 17 for discharging a third gas on both sides.
The gas front / rear suction port 18 and the second gas discharge port 16 have a long hole shape along the laser light transmission hole 11, and have shapes that respectively exceed the long ends of the laser light transmission hole 11. Further, it is desirable that the gas front / rear suction port 18 be close to the laser light transmission hole 11 and the second gas discharge port 16 or the third gas discharge port 17 that discharges the third gas. The second gas discharge port 16 is preferably provided in the vicinity of the outer wall of the laser light irradiation local seal box 10.
　また、第２ガス放出口１６は、レーザ光透過孔１１を基準にして、外側に放出する放出角θ１を有している。放出角θ１は、４５度以上とするのが望ましい。
　第３ガス放出口１７は、レーザ光透過孔１１の側方に沿った長孔形状を有しており、レーザ光透過孔１１の短尺両端をそれぞれ超える形状を有している。さらには、第２ガス放出口１６の近傍にまで伸長しているのが望ましい。
　また、第１のガス、第２のガス、第３のガスは、同じ種類でもよく、異なる種類であってもよい。また、同種のガスであって、純度が異なるものであってもよい。例えば、第１のガスに純度の高い不活性ガス（窒素など）を使用し、第２のガス、第３のガスに相対的に純度の低い不活性ガス（窒素など）を使用するものであってもよい。 The second gas discharge port 16 has an emission angle θ1 that is emitted to the outside with respect to the laser light transmission hole 11. The discharge angle θ1 is desirably 45 degrees or more.
The third gas discharge port 17 has a long hole shape along the side of the laser light transmission hole 11, and has a shape that exceeds the short ends of the laser light transmission hole 11. Furthermore, it is desirable to extend to the vicinity of the second gas discharge port 16.
The first gas, the second gas, and the third gas may be the same type or different types. Moreover, it is the same kind of gas, and the purity may be different. For example, an inert gas having high purity (such as nitrogen) is used for the first gas, and an inert gas having relatively low purity (such as nitrogen) is used for the second gas and the third gas. May be.
　次に、レーザ処理装置１Ｂにおける動作について説明する。
　前記実施形態と同様に、基板１２０を導入するとともに、ガス導入孔１２からレーザ光照射局所シールボックス１０内に窒素ガスを導入する。窒素ガスは、レーザ光透過孔１１から下方側に向けて放出される。また、第２ガス放出口１６および第３ガス放出口１７から、第２のガスおよび第３のガスが放出される。さらに、ガス前後吸引口１８では、ガスの吸引がなされる。
　基板１２０の導入とともに、ガス導入孔１２からレーザ光照射局所シールボックス１０内に窒素ガスを導入する。窒素ガスは、レーザ光透過孔１１から下方側に向けて放出される。また、ガス前後吸引口１８では、ガスの吸引がなされ、レーザ光透過孔１１から放出されるガスがガス前後吸引口１８から吸引され、安定したガスの流れが形成される。 Next, the operation in the laser processing apparatus 1B will be described.
Similarly to the above-described embodiment, the substrate 120 is introduced, and nitrogen gas is introduced from the gas introduction hole 12 into the laser beam irradiation local seal box 10. Nitrogen gas is emitted downward from the laser light transmission hole 11. Further, the second gas and the third gas are discharged from the second gas discharge port 16 and the third gas discharge port 17. Further, gas suction is performed at the gas front-rear suction port 18.
Along with the introduction of the substrate 120, nitrogen gas is introduced into the laser beam irradiation local seal box 10 from the gas introduction hole 12. Nitrogen gas is emitted downward from the laser light transmission hole 11. In addition, gas is sucked at the gas front / rear suction port 18, and the gas discharged from the laser light transmission hole 11 is sucked from the gas front / rear suction port 18, and a stable gas flow is formed.
　また、第２ガス放出口１６および第３ガス放出口１７から、第２のガスおよび第３のガスが放出される。これにより、レーザ光透過孔１１から放出されてガス前後吸引口１８に流れる窒素ガスによって形成される局所雰囲気内に雰囲気外からの影響が及ぶのを低減することができ、局所雰囲気の安定化が特に効果的になる。 Also, the second gas and the third gas are released from the second gas discharge port 16 and the third gas discharge port 17. As a result, it is possible to reduce the influence of the outside atmosphere on the local atmosphere formed by the nitrogen gas emitted from the laser light transmitting hole 11 and flowing to the gas front-rear suction port 18, thereby stabilizing the local atmosphere. Especially effective.
　特に、基板１２０を処理室２内に導入した際に、外気が乱入するが、これによる影響を効果的に排除して安定した局所雰囲気を維持することができる。
　また、第２ガス放出口１６からは、外側に向けた放出角θ１でガスが放出されるので、雰囲気外からの影響をより確実に排除することができる。なお、第３ガス放出口１７においても同様に外側に向けた放出角（＞０度）を設けるようにしてもよい。
　さらに、第３ガス放出口１７とレーザ光透過孔１１との間に、ガス側方吸引口を設けるようにしてもよい。 In particular, when the substrate 120 is introduced into the processing chamber 2, the outside air intrudes, but the influence of this can be effectively eliminated and a stable local atmosphere can be maintained.
Further, since the gas is discharged from the second gas discharge port 16 at the discharge angle θ1 directed outward, it is possible to more reliably eliminate the influence from outside the atmosphere. Similarly, the third gas discharge port 17 may have an outward discharge angle (> 0 degrees).
Further, a gas side suction port may be provided between the third gas discharge port 17 and the laser beam transmission hole 11.
（第４実施形態）
　次に、他の実施形態４を図１０に基づいて説明する。
　この実施形態は、レーザ光照射局所シールボックスの形状を変更したものであり、レーザ光照射局所シールボックス２０の下面を整流面としている。整流面は、移動する基板１２０と１０ｍｍ以下の間隔を有している。
　レーザ光照射局所シールボックス２０は、下面中央に長尺形状のレーザ光透過孔２２を有し、前記移動方向において、レーザ光透過孔２２の両外側にガス前後吸引口２３を有している。ガス前後吸引口２３は、レーザ光照射局所シールボックス２０の壁部を通る通路によってレーザ光照射局所シールボックス２０に設けられたガス吸引孔２３Ａに連通しており、ガス吸引孔２３Ａには図示しないポンプなどに接続される。ガス前後吸引口２３は、レーザ光透過孔２２に沿った長孔形状を有しており、レーザ光透過孔２２の長尺両端をそれぞれ超える形状を有している。また、ガス前後吸引口２３はレーザ光透過孔２２に近い位置に設けることが望ましい。 (Fourth embodiment)
Next, another embodiment 4 will be described with reference to FIG.
In this embodiment, the shape of the laser light irradiation local seal box is changed, and the lower surface of the laser light irradiation local seal box 20 is a rectifying surface. The rectifying surface has a distance of 10 mm or less from the moving substrate 120.
The laser light irradiation local seal box 20 has an elongated laser light transmission hole 22 at the center of the lower surface, and has gas front and rear suction ports 23 on both outer sides of the laser light transmission hole 22 in the moving direction. The gas front / rear suction port 23 communicates with a gas suction hole 23A provided in the laser light irradiation local seal box 20 through a passage passing through the wall portion of the laser light irradiation local seal box 20, and is not shown in the gas suction hole 23A. Connected to a pump. The gas front / rear suction port 23 has a long hole shape along the laser light transmission hole 22 and has a shape that exceeds both long ends of the laser light transmission hole 22. The gas front / rear suction port 23 is preferably provided at a position close to the laser light transmission hole 22.
　さらに、ガス前後吸引口２３の両外側に、第２ガス放出口２４がそれぞれ形成されている。第２ガス放出口２４は、レーザ光照射局所シールボックス２０の下壁部を通る通路によってレーザ光照射局所シールボックス２０に設けられたガス供給孔２４Ａに連通しており、ガス供給孔２４Ａには図示しないガス供給部などに接続されている。
　また、図示していないが、レーザ光透過孔２２の両側方側に第３のガスを放出する第３ガス放出口を有している。
　第２ガス放出口２４は、レーザ光透過孔２２に沿った長孔形状を有しており、レーザ光透過孔２２の長尺両端をそれぞれ超える形状を有している。また、第２ガス放出口２４はレーザ光透過孔２２からガス前後吸引口２３より遠い位置に設けることが望ましい。さらに第３ガス放出口は、レーザ光透過孔２２の側面に沿った長孔形状を有しており、レーザ光透過孔２２の短尺両端をそれぞれ超える形状を有している。 Further, second gas discharge ports 24 are respectively formed on both outer sides of the gas front and rear suction ports 23. The second gas discharge port 24 communicates with a gas supply hole 24A provided in the laser light irradiation local seal box 20 through a passage passing through the lower wall portion of the laser light irradiation local seal box 20, and the gas supply hole 24A includes It is connected to a gas supply unit (not shown).
Although not shown, the laser beam transmitting hole 22 has a third gas discharge port for discharging a third gas on both sides.
The second gas discharge port 24 has a long hole shape along the laser light transmission hole 22, and has a shape that exceeds both long ends of the laser light transmission hole 22. The second gas discharge port 24 is desirably provided at a position farther from the laser light transmission hole 22 than the gas front / rear suction port 23. Further, the third gas discharge port has a long hole shape along the side surface of the laser light transmission hole 22, and has a shape that exceeds both short ends of the laser light transmission hole 22.
　この実施形態では、ガス導入孔２１からレーザ光照射局所シールボックス２０内に窒素ガスを導入する。窒素ガスは、レーザ光透過孔２２から下方側に向けて放出される。また、第２ガス放出口２４および第３ガス放出口から、第２のガスおよび第３のガスが放出される。さらに、ガス前後吸引口２３では、ガスの吸引がなされる。
　レーザ光透過孔１１から放出されたガスは、ガス前後吸引口２３で吸引され、安定したガスの流れが形成される。 In this embodiment, nitrogen gas is introduced into the laser beam irradiation local seal box 20 from the gas introduction hole 21. Nitrogen gas is emitted downward from the laser light transmission hole 22. Further, the second gas and the third gas are released from the second gas discharge port 24 and the third gas discharge port. Further, the gas is sucked at the gas front / rear suction port 23.
The gas discharged from the laser beam transmitting hole 11 is sucked by the gas front / rear suction port 23 to form a stable gas flow.
　また、第２ガス放出口２４および第３ガス放出口から、第２のガスおよび第３のガスが放出される。これにより、レーザ光透過孔２２から放出されてガス前後吸引口２３に流れる窒素ガスによって形成される局所雰囲気内に雰囲気外からの影響が及ぶのを低減することができる。
　また、第２ガス放出口２４からは、下方にガスが放出され、雰囲気外からの影響を排除する。 Further, the second gas and the third gas are released from the second gas discharge port 24 and the third gas discharge port. Thereby, it is possible to reduce the influence from outside the atmosphere on the local atmosphere formed by the nitrogen gas emitted from the laser light transmitting hole 22 and flowing to the gas front-rear suction port 23.
Further, gas is released downward from the second gas discharge port 24 to eliminate the influence from outside the atmosphere.
（第５実施形態）
　次に、他の実施形態５を図１１に基づいて説明する。
　なお、前記各実施形態と同様の構成については同一の符号を付してその説明を省略または簡略化する。
　この実施形態では、実施形態４と同様に、レーザ光照射局所シールボックス２０Ａの下面を整流面としている。整流面は、移動する基板１２０と１０ｍｍ以下の間隔を有している。
　レーザ光照射局所シールボックス２０Ａは、下面中央に長尺形状のレーザ光透過孔２２を有し、前記移動方向において、レーザ光透過孔２２の両外側にガス前後吸引口２３を有している。ガス前後吸引口２３は、レーザ光照射局所シールボックス２０の壁部を通る通路によってレーザ光照射局所シールボックス２０Ａに設けられたガス吸引孔２３Ａに連通しており、ガス吸引孔２３Ａには図示しないポンプなどに接続される。ガス前後吸引口２３は、レーザ光透過孔２２に沿った長孔形状を有しており、レーザ光透過孔２２の長尺両端をそれぞれ超える形状を有している。 (Fifth embodiment)
Next, another embodiment 5 will be described with reference to FIG.
In addition, the same code | symbol is attached | subjected about the structure similar to each said embodiment, and the description is abbreviate | omitted or simplified.
In this embodiment, as in the fourth embodiment, the lower surface of the laser light irradiation local seal box 20A is used as a rectifying surface. The rectifying surface has a distance of 10 mm or less from the moving substrate 120.
The laser beam irradiation local seal box 20 </ b> A has a long laser beam transmission hole 22 at the center of the lower surface, and gas front and rear suction ports 23 on both outer sides of the laser beam transmission hole 22 in the moving direction. The gas front / rear suction port 23 communicates with a gas suction hole 23A provided in the laser light irradiation local seal box 20A through a passage passing through the wall portion of the laser light irradiation local seal box 20, and is not shown in the gas suction hole 23A. Connected to a pump. The gas front / rear suction port 23 has a long hole shape along the laser light transmission hole 22 and has a shape that exceeds both long ends of the laser light transmission hole 22.
　さらに、ガス前後吸引口２３の両外側に、第２ガス放出口２５がそれぞれ形成されている。第２ガス放出口２５は、レーザ光照射局所シールボックス２０Ａの下壁部を通る通路によってレーザ光照射局所シールボックス２０Ａに設けられたガス供給孔２５Ａに連通しており、ガス供給孔２５Ａには図示しないガス供給部などに接続されている。
　また、図示していないが、レーザ光透過孔２２の両側方側に第３のガスを放出する第３ガス放出口を有している。
　第２ガス放出口２５は、レーザ光透過孔２２に沿った長孔形状を有しており、レーザ光透過孔２２の長尺両端をそれぞれ超える形状を有している。また、第２ガス放出口２５はレーザ光透過孔２２からガス前後吸引口２３より遠い位置に設けることが望ましい。さらに第３ガス放出口は、レーザ光透過孔２２の側面に沿った長孔形状を有しており、レーザ光透過孔２２の短尺両端をそれぞれ超える形状を有している。
　なお、第２ガス放出口２５は、レーザ光透過孔２２を基準にして、基板１２０の移動方向において外側に傾斜した放出角を有しており、該放出角は４５度以上が望ましい。 Further, second gas discharge ports 25 are respectively formed on both outer sides of the gas front and rear suction ports 23. The second gas discharge port 25 communicates with a gas supply hole 25A provided in the laser light irradiation local seal box 20A through a passage passing through the lower wall portion of the laser light irradiation local seal box 20A. It is connected to a gas supply unit (not shown).
Although not shown, the laser beam transmitting hole 22 has a third gas discharge port for discharging a third gas on both sides.
The second gas discharge port 25 has a long hole shape along the laser light transmission hole 22, and has a shape that exceeds both long ends of the laser light transmission hole 22. The second gas discharge port 25 is desirably provided at a position farther from the laser light transmission hole 22 than the gas front / rear suction port 23. Further, the third gas discharge port has a long hole shape along the side surface of the laser light transmission hole 22, and has a shape that exceeds both short ends of the laser light transmission hole 22.
The second gas discharge port 25 has a discharge angle inclined outward in the moving direction of the substrate 120 with respect to the laser light transmission hole 22, and the discharge angle is preferably 45 degrees or more.
　ガス導入孔２１からレーザ光照射局所シールボックス２０Ａ内に窒素ガスを導入すると、窒素ガスは、レーザ光透過孔２２から下方側に向けて放出される。また、第２ガス放出口２５および第３ガス放出口から、第２のガスおよび第３のガスが放出される。さらに、ガス前後吸引口２３では、ガスの吸引がなされる。
　レーザ光透過孔２２から放出されたガスは、ガス前後吸引口２３で吸引され、安定したガスの流れが形成される。 When nitrogen gas is introduced from the gas introduction hole 21 into the laser light irradiation local seal box 20A, the nitrogen gas is released from the laser light transmission hole 22 downward. Further, the second gas and the third gas are released from the second gas outlet 25 and the third gas outlet. Further, the gas is sucked at the gas front / rear suction port 23.
The gas emitted from the laser beam transmitting hole 22 is sucked by the gas front / rear suction port 23, and a stable gas flow is formed.
　また、第２ガス放出口２５および第３ガス放出口から、第２のガスおよび第３のガスが放出される。これにより、レーザ光透過孔２２から放出されてガス前後吸引口２３に流れる窒素ガスによって形成される局所雰囲気内に雰囲気外からの影響が及ぶのを低減する。
　また、第２ガス放出口２５からは、外側に向けた放出角でガスが放出されるので、雰囲気外からの影響をより確実に排除することができる。なお、第３ガス放出口においても同様に外側に向けた放出角（＞０度）を設けるようにしてもよい。 Further, the second gas and the third gas are released from the second gas outlet 25 and the third gas outlet. Thereby, the influence from outside the atmosphere on the local atmosphere formed by the nitrogen gas emitted from the laser beam transmitting hole 22 and flowing to the gas front and rear suction port 23 is reduced.
Further, since the gas is discharged from the second gas discharge port 25 at a discharge angle directed outward, it is possible to more reliably eliminate the influence from outside the atmosphere. Similarly, the third gas discharge port may be provided with an outward discharge angle (> 0 degrees).
　上記各実施形態では、以下の効果が得られる。
１．レーザ光照射位置からガスを基板に向けて噴射しないので任意のガスによる層流を乱す要因がなくなる。
２．層流を形成させる整流板を折り曲げることなく長く設計できるので、より整った整流を形成できる。
３．蒸気や微粒子などの被照射物から発生する物質を一方向に向かって排出するため迅速にレーザの光路上から取り除くことができる。
４．蒸気や微粒子などの被照射物から発生する物質が多い場合には、流速を上げることで対応できる
５．外部からのパーティクルの除去
６．安定化時間の短縮
７．静電気の除去 In the above embodiments, the following effects can be obtained.
1. Since the gas is not injected toward the substrate from the laser beam irradiation position, there is no cause for disturbing the laminar flow due to an arbitrary gas.
2. Since the rectifying plate for forming the laminar flow can be designed long without being bent, more rectified rectification can be formed.
3. Since substances generated from the irradiated object such as vapor and fine particles are discharged in one direction, they can be quickly removed from the laser light path.
4). 4. When there are many substances generated from irradiated objects such as steam and fine particles, it can be dealt with by increasing the flow velocity. 5. Removal of particles from outside 6. Reduction of stabilization time Static electricity removal
　すなわち、上記各実施形態によれば、被処理体と、被処理体と平行に設置した整流面との間に任意のガスを流すことにより、任意のガスによる均一な流速と圧力分布を形成することができる。さらに、このガス流により、蒸気や微粒子などの被処理体から発生する物質をレーザ光の光路上から排出することにより、均一な照射雰囲気を実現するとともに、整流面にガスの噴出部を設けることで実現した安定雰囲気を乱すことなく、外部のガス流が照射位置に入るのを防ぐことができる。 That is, according to each of the above embodiments, an arbitrary gas is allowed to flow between the object to be processed and the rectifying surface installed in parallel with the object to be processed, thereby forming a uniform flow velocity and pressure distribution by the arbitrary gas. be able to. In addition, by this gas flow, substances generated from the object to be processed, such as vapor and fine particles, are discharged from the optical path of the laser beam, thereby realizing a uniform irradiation atmosphere and providing a gas ejection part on the rectifying surface. It is possible to prevent the external gas flow from entering the irradiation position without disturbing the stable atmosphere realized in.
　なお、各実施形態では、被処理体として基板について説明したが、本発明としては、被処理体が基板に限定されるものではない。また、本願発明では、レーザ処理装置を、非単結晶を結晶化させるものとして説明したが、レーザ処理装置の処理内容がこれに限定されるものではなく、メタル基板やプラスティック基板などのフレキシブル基板などに用いることもできる。 In each embodiment, the substrate is described as the object to be processed. However, in the present invention, the object to be processed is not limited to the substrate. In the present invention, the laser processing apparatus has been described as crystallizing a non-single crystal. However, the processing content of the laser processing apparatus is not limited to this, and a flexible substrate such as a metal substrate or a plastic substrate may be used. It can also be used.
　以下に、本発明の実施例について説明する。
　実施例では以下の条件で試験を行った。

ａ（アモルファス）－Ｓｉ膜厚
　　　　　　　　　　　５０ｎｍ
エキシマレーザ　　　　Ｖｙｐｅｒ／波長３０８ｎｍ、６００Ｈｚ
ビームサイズ　　　　　７５０ｍｍ　×　０．４ｍｍ
照射エネルギー密度　　３７０ｍＪｃｍ－２
ビームスティープネス　７０μｍ Examples of the present invention will be described below.
In the examples, tests were performed under the following conditions.

a (Amorphous) -Si film thickness 50nm
Excimer laser Vyper / wavelength 308nm, 600Hz
Beam size 750mm x 0.4mm
Irradiation energy density 370 mJcm -2
Beam steepness 70μm
　ガス投入部Ｂはレーザ光照射位置の周辺に設置されていて、ガス吸入部の排気の速度は照射雰囲気を不活性ガス雰囲気にするためにシールボックス内に流す不活性ガスの流量に合わせて調整した。
　上記により、レーザ光の照射領域周辺では、安定した局所雰囲気が形成され、基板の入れ替え時に酸素濃度が上がらないことにより、安定するまでの時間が掛からず、生産性を向上することができた。 The gas input part B is installed around the laser light irradiation position, and the exhaust speed of the gas suction part is adjusted according to the flow rate of the inert gas flowing in the seal box in order to make the irradiation atmosphere an inert gas atmosphere. did.
As described above, a stable local atmosphere is formed around the irradiation region of the laser beam, and the oxygen concentration does not increase when the substrate is replaced, so that it does not take time to stabilize, and productivity can be improved.
　以上、本発明について、上記各実施形態および実施例に基づいて説明を行ったが、本発明の範囲を逸脱しない限りは、各実施形態に対する適宜の変更が可能である。 As mentioned above, although this invention was demonstrated based on said each embodiment and an Example, unless it deviates from the scope of the present invention, an appropriate change with respect to each embodiment is possible.
　１　　レーザ処理装置
　１Ａ　レーザ処理装置
　１Ｂ　レーザ処理装置
　２　　処理室
　３　　レーザ光源
　４　　光学系
　５　　ステージ
　６　　ドアバルブ
　７　　出入り口
　８　　レーザ光導入窓
１０　　レーザ光照射局所シールボックス
１１　　レーザ光透過孔
１２　　ガス導入孔
１３　　整流板
１５　　ガス前後吸引口
１６　　第２ガス放出口
１７　　第３ガス放出口
１８　　ガス前後吸引口
２０　　レーザ光照射局所シールボックス
２２　　レーザ光透過孔
２３　　ガス前後吸引口
２４　　第２ガス放出口
２５　　第２ガス放出口
５０　　レーザ光
５０Ａ　照射領域 DESCRIPTION OF SYMBOLS 1 Laser processing apparatus 1A Laser processing apparatus 1B Laser processing apparatus 2 Processing chamber 3 Laser light source 4 Optical system 5 Stage 6 Door valve 7 Entrance / exit 8 Laser light introduction window 10 Laser light irradiation local seal box 11 Laser light transmission hole 12 Gas introduction hole 13 Rectification Plate 15 Gas front and rear suction port 16 Second gas discharge port 17 Third gas discharge port 18 Gas front and rear suction port 20 Laser light irradiation local seal box 22 Laser light transmission hole 23 Gas front and rear suction port 24 Second gas discharge port 25 Second gas Emission port 50 Laser light 50A irradiation area

Claims (18)

  1. 　被処理体に対し、レーザ光を相対的に走査しつつ照射するレーザ処理装置において、
    　前記被処理体および前記レーザ光の一方または両方を移動させる走査移動部と、
    　前記被処理体に前記レーザ光を照射するレーザ光照射部と、
    　前記被処理体において前記レーザ光が照射されている照射領域に対し、少なくとも第１のガスを放出するガス放出部と、を備え、
    　前記ガス放出部は、レーザ光照射中の前記被処理体と対面する位置に整流面を有し、
    　前記整流面には、前記第１のガスが放出される第１ガス放出口と、少なくとも走査方向において、前記第１ガス放出口の両外側で、レーザ光照射中の前記被処理体に対し第２のガスを放出する第２ガス放出口およびガス前後吸引口の一方または両方が設けられていることを特徴とするレーザ処理装置。     In a laser processing apparatus for irradiating a target object while relatively scanning laser light,
    A scanning moving unit for moving one or both of the object to be processed and the laser beam;
    A laser beam irradiation unit that irradiates the object to be processed with the laser beam;
    A gas discharge unit that discharges at least a first gas to an irradiation region irradiated with the laser beam in the object to be processed;
    The gas discharge part has a rectifying surface at a position facing the object to be processed during laser light irradiation,
    The rectifying surface has a first gas discharge port from which the first gas is discharged, and at least in the scanning direction, on both outer sides of the first gas discharge port with respect to the object to be processed being irradiated with laser light. One or both of the 2nd gas discharge port which discharges | releases 2 gas, and the gas front-back suction port are provided, The laser processing apparatus characterized by the above-mentioned.
  2. 　前記第１ガス放出口は、前記照射領域が覆われる範囲に第１のガスが放出されるものであることを特徴とする請求項１記載のレーザ処理装置。 The laser processing apparatus according to claim 1, wherein the first gas discharge port is configured to discharge the first gas in a range in which the irradiation region is covered.
  3. 　前記第２ガス放出口および前記ガス前後吸引口は、前記照射領域の幅方向形状を両側で超える形状を有していることを特徴とする請求項１または２に記載のレーザ処理装置。 3. The laser processing apparatus according to claim 1, wherein the second gas discharge port and the gas front-rear suction port have shapes that exceed the shape of the irradiation region in the width direction on both sides.
  4. 　前記ガス放出部は、前記走査方向の両側方側で、移動する前記被処理体に対し第３のガスを放出する第３ガス放出口およびガス側方吸引口の一方または両方が設けられていることを特徴とする請求項１～３のいずれか１項に記載のレーザ処理装置。 The gas discharge part is provided with one or both of a third gas discharge port and a gas side suction port for discharging a third gas to the object to be moved on both sides in the scanning direction. The laser processing apparatus according to any one of claims 1 to 3, wherein:
  5. 　前記第３ガス放出口および前記ガス側方吸引口は、前記照射領域の走査方向における形状を両側で超える形状を有していることを特徴とする請求項４に記載のレーザ処理装置。 The laser processing apparatus according to claim 4, wherein the third gas discharge port and the gas side suction port have shapes that exceed the shape of the irradiation region in the scanning direction on both sides.
  6. 　前記ガス放出部は、前記第１ガス放出口の両外側の一方または両方で、前記第２ガス放出口と前記ガス前後吸引口とを有し、前記ガス前後吸引口が前記第２ガス放出口の内側に位置していることを特徴とする請求項１～５のいずれか１項に記載のレーザ処理装置。 The gas discharge part has the second gas discharge port and the gas front-rear suction port on one or both of the outer sides of the first gas discharge port, and the gas front-rear suction port is the second gas discharge port. The laser processing apparatus according to any one of claims 1 to 5, wherein the laser processing apparatus is located on the inside.
  7. 　前記第２ガス放出口が、第１ガス放出口を基準にして、下方外側に向けて第２のガスを放出する所定の放出角を有することを特徴とする請求項１～６のいずれか１項に記載のレーザ処理装置。 The first gas discharge port according to any one of claims 1 to 6, wherein the second gas discharge port has a predetermined discharge angle for discharging the second gas toward the lower outside with respect to the first gas discharge port. The laser processing apparatus according to item.
  8. 　前記放出角が４５度以上であることを特徴とする請求項７に記載のレーザ処理装置。 The laser processing apparatus according to claim 7, wherein the emission angle is 45 degrees or more.
  9. 　前記整流面は、移動する被処理体との間の間隔が１０ｍｍ以下であることを特徴とする請求項１～８のいずれか１項に記載のレーザ処理装置。 The laser processing apparatus according to any one of claims 1 to 8, wherein an interval between the rectifying surface and a moving object to be processed is 10 mm or less.
  10. 　前記整流面は、第１ガス放出口を基準にして、走査方向において、照射面上のレーザ光の長さより１０ｍｍ以上の長さで伸長していることを特徴とする請求項１～９のいずれか１項に記載のレーザ処理装置。 10. The rectifying surface is extended with a length of 10 mm or more from the length of the laser beam on the irradiation surface in the scanning direction with reference to the first gas discharge port. The laser processing apparatus of Claim 1.
  11. 　前記第２ガス放出口は、第１ガス放出口を基準にして、走査方向で１ｍｍ以上離れた位置に設けられていることを特徴とする請求項１～１０のいずれか１項に記載のレーザ処理装置。 11. The laser according to claim 1, wherein the second gas discharge port is provided at a position separated by 1 mm or more in the scanning direction with reference to the first gas discharge port. Processing equipment.
  12. 　前記レーザ光は、前記被処理体に対する照射面上において、ラインビーム形状を有することを特徴とする請求項１～１１のいずれか１項に記載のレーザ処理装置。 12. The laser processing apparatus according to claim 1, wherein the laser beam has a line beam shape on an irradiation surface with respect to the object to be processed.
  13. 　前記被処理体が非単結晶半導体であり、前記レーザ処理装置は、前記非単結晶半導体を単結晶化するものであることを特徴とする請求項１～１２のいずれか１項に記載のレーザ処理装置。 The laser according to any one of claims 1 to 12, wherein the object to be processed is a non-single crystal semiconductor, and the laser processing apparatus converts the non-single crystal semiconductor into a single crystal. Processing equipment.
  14. 　前記第２のガスおよび前記第３のガスは、除電されて第２ガス放出口および第３ガス放出口に供給されるものであることを特徴とする請求項４に記載のレーザ処理装置。 The laser processing apparatus according to claim 4, wherein the second gas and the third gas are discharged and supplied to the second gas outlet and the third gas outlet.
  15. 　前記整流面から放出されるガスが不活性ガスであることを特徴とする請求項１～１４のいずれか１項に記載のレーザ処理装置。 15. The laser processing apparatus according to claim 1, wherein the gas released from the rectifying surface is an inert gas.
  16. 　被処理体に対し、レーザ光を相対的に走査しつつ照射するレーザ処理方法において、
    　照射位置にある前記被処理体と対面する位置に整流面を有し、
    　該整流面から、前記レーザ光が照射されている照射領域に対し、第１のガスを放出するとともに、少なくとも走査方向において、第１のガスが放出されている前記整流面の区域の両外側で、第２のガスの放出およびガスの吸引の一方または両方を行うことを特徴とするレーザ処理方法。     In a laser processing method of irradiating a target object while relatively scanning laser light,
    A rectifying surface at a position facing the object to be processed at the irradiation position;
    The first gas is emitted from the rectifying surface to the irradiation region irradiated with the laser beam, and at least in the scanning direction, on both outer sides of the region of the rectifying surface from which the first gas is emitted. A laser processing method, wherein one or both of the second gas release and the gas suction is performed.
  17. 　前記第１のガスの放出の際に、第１のガスが放出されている前記整流面の区域の両側方側で、さらに第３のガスの放出およびガスの吸引の一方または両方を行うことを特徴とする請求項１６に記載のレーザ処理方法。 When releasing the first gas, one or both of releasing the third gas and sucking the gas are performed on both sides of the area of the rectifying surface from which the first gas is released. The laser processing method according to claim 16, which is characterized by:
  18. 　前記ガスの吸引は、前記第１のガスの放出量に合わせて吸引量が定められていることを特徴とする請求項１６または１７に記載のレーザ処理方法。 18. The laser processing method according to claim 16, wherein the suction amount of the gas is determined in accordance with a discharge amount of the first gas.
PCT/JP2017/036660 2016-10-20 2017-10-10 Laser processing apparatus and laser processing method WO2018074283A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201780064615.2A CN109844907B (en) 2016-10-20 2017-10-10 Laser processing apparatus and laser processing method
JP2018507038A JP7105187B2 (en) 2016-10-20 2017-10-10 LASER PROCESSING APPARATUS AND LASER PROCESSING METHOD
US16/342,182 US11810799B2 (en) 2016-10-20 2017-10-10 Laser processing apparatus and laser processing method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016-206095 2016-10-20
JP2016206095 2016-10-20

Publications (1)

Publication Number Publication Date
WO2018074283A1 true WO2018074283A1 (en) 2018-04-26

Family

ID=62019488

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2017/036660 WO2018074283A1 (en) 2016-10-20 2017-10-10 Laser processing apparatus and laser processing method

Country Status (4)

Country Link
US (1) US11810799B2 (en)
JP (1) JP7105187B2 (en)
CN (1) CN109844907B (en)
WO (1) WO2018074283A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021030586A (en) * 2019-08-26 2021-03-01 浜松ホトニクス株式会社 Active energy irradiation unit and active energy irradiation device
EP3827905A1 (en) * 2019-08-26 2021-06-02 Hamamatsu Photonics K.K. Active energy radiation unit and active energy radiation device

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7322189B2 (en) * 2019-06-06 2023-08-07 エスエルエム ソルーションズ グループ アーゲー Apparatus and method
JP2022020938A (en) * 2020-07-21 2022-02-02 株式会社日本製鋼所 Laser annealer, laser annealing method, and manufacturing method of semiconductor device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005074466A (en) * 2003-08-29 2005-03-24 Sumitomo Heavy Ind Ltd Nozzle for laser beam machining, and laser beam machine
JP2006108271A (en) * 2004-10-04 2006-04-20 Ulvac Japan Ltd Method and device for converting amorphous silicon film into polysilicon film
JP2006253285A (en) * 2005-03-09 2006-09-21 Sumitomo Heavy Ind Ltd Apparatus and method for irradiating laser
JP2007288128A (en) * 2006-03-23 2007-11-01 Ihi Corp Laser annealing device
JP2008311249A (en) * 2007-06-12 2008-12-25 Japan Steel Works Ltd:The Laser processing apparatus

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4845267B2 (en) 2001-01-15 2011-12-28 東芝モバイルディスプレイ株式会社 Laser annealing apparatus and laser annealing method
KR20070096845A (en) 2006-03-23 2007-10-02 스미또모 가가꾸 가부시키가이샤 Method for packing optical film-superposed body
JP5083708B2 (en) * 2007-03-28 2012-11-28 株式会社Ｉｈｉ Laser annealing equipment
JP5540476B2 (en) * 2008-06-30 2014-07-02 株式会社Ｉｈｉ Laser annealing equipment
JP5408678B2 (en) 2011-11-07 2014-02-05 株式会社日本製鋼所 Laser processing equipment
JP5610486B2 (en) * 2011-11-18 2014-10-22 株式会社日本製鋼所 Gas injection means for laser processing apparatus
JP5717146B2 (en) * 2012-10-23 2015-05-13 株式会社日本製鋼所 Laser line beam improving apparatus and laser processing apparatus

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005074466A (en) * 2003-08-29 2005-03-24 Sumitomo Heavy Ind Ltd Nozzle for laser beam machining, and laser beam machine
JP2006108271A (en) * 2004-10-04 2006-04-20 Ulvac Japan Ltd Method and device for converting amorphous silicon film into polysilicon film
JP2006253285A (en) * 2005-03-09 2006-09-21 Sumitomo Heavy Ind Ltd Apparatus and method for irradiating laser
JP2007288128A (en) * 2006-03-23 2007-11-01 Ihi Corp Laser annealing device
JP2008311249A (en) * 2007-06-12 2008-12-25 Japan Steel Works Ltd:The Laser processing apparatus

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021030586A (en) * 2019-08-26 2021-03-01 浜松ホトニクス株式会社 Active energy irradiation unit and active energy irradiation device
EP3787015A1 (en) * 2019-08-26 2021-03-03 Hamamatsu Photonics K.K. Active energy radiation unit and active energy radiation device
EP3827905A1 (en) * 2019-08-26 2021-06-02 Hamamatsu Photonics K.K. Active energy radiation unit and active energy radiation device
US11298959B2 (en) 2019-08-26 2022-04-12 Hamamatsu Photonics K.K. Active energy radiation unit and active energy radiation device
JP7308691B2 (en) 2019-08-26 2023-07-14 浜松ホトニクス株式会社 Active energy irradiation unit and active energy irradiation device
US11806687B2 (en) 2019-08-26 2023-11-07 Hamamatsu Photonics K.K. Active energy radiation unit and active energy radiation device

Also Published As

Publication number Publication date
CN109844907A (en) 2019-06-04
JP7105187B2 (en) 2022-07-22
US20190326140A1 (en) 2019-10-24
US11810799B2 (en) 2023-11-07
JPWO2018074283A1 (en) 2019-08-22
CN109844907B (en) 2024-02-27

Similar Documents

Publication Publication Date Title
WO2018074283A1 (en) Laser processing apparatus and laser processing method
WO2017073561A1 (en) Laser processing device flow regulation device and laser processing device
CN113013073B (en) Atmosphere forming device and floating conveying method
US10214441B2 (en) Cutting device
JP5408678B2 (en) Laser processing equipment
US11504911B2 (en) Irradiation device for an apparatus for additively manufacturing three-dimensional objects
JP4947646B2 (en) Gas injection means for laser processing apparatus
JP5717146B2 (en) Laser line beam improving apparatus and laser processing apparatus
KR101164524B1 (en) Laser processing apparatus which can control size of laser beam
JP2009099917A (en) Laser annealing apparatus
US20200122397A1 (en) Apparatus for additively manufacturing three-dimensional objects
JP5083708B2 (en) Laser annealing equipment
KR101089624B1 (en) Laser processing apparatus which can control length and intensity of laser beam
JP4936328B2 (en) Laser processing equipment
JP2006147859A (en) Method and device for processing
TW201313373A (en) Laser head
JP2006253285A (en) Apparatus and method for irradiating laser
JP2012064963A (en) Gas jet means of laser processing apparatus
WO2022168551A1 (en) Laser light introduction device
JP6529475B2 (en) Laser irradiation device
WO2011129282A1 (en) Laser processing apparatus
JP2021077731A (en) Laser processing device and laser beam profile measurement method
JP5467578B2 (en) Laser processing equipment
ITME20110025A1 (en) PRODUCTION METHOD OF NANO-INORGANIC PARTICLES VIA LASER ABLATION IN LIQUID FLOW

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 2018507038

Country of ref document: JP

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 17862114

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 17862114

Country of ref document: EP

Kind code of ref document: A1