JP2017054642A - Light emitting device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent a decrease in the ratio of an area of an emission region relative to a substrate while suppressing a second electrode from peeling from an organic layer even if the substrate is bent, in a light emitting device.SOLUTION: A light emitting portion 140 is formed on a substrate 100, and includes a first electrode 110, an organic layer 120, and a second electrode 130. The organic layer 120 is located between the first electrode 110 and the second electrode 130. A conductive portion 190 is located between the substrate 100 and the organic layer 120, and is electrically connected to the first electrode 110. The first electrode 110 and the organic layer 120 are formed also in a region overlapping the conductive portion 190. At least a part of the region overlapping the conductive portion 190 on the top face of the organic layer 120 is a non-formation region 134 where the second electrode 130 is not formed.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a light emitting device.

  In recent years, a light emitting device having an organic EL (Organic Electroluminescence) element in a light emitting portion has been developed. The organic EL element has a configuration in which an organic layer is sandwiched between a first electrode and a second electrode. In order to extract the light emitted from the light emitting layer to the outside, it is necessary to form the first electrode with a transparent electrode material. A transparent electrode material has a higher resistance than a metal. For this reason, the first electrode is often provided with a conductive portion as an auxiliary electrode.

  For example, in Patent Document 1, in an organic EL element in which a stacked body of an organic layer and a second electrode is provided in a stripe shape, an insulating layer is provided between a plurality of stacked bodies, and the insulating layer of the first electrode overlaps the insulating layer. It is described that a conductive portion is provided in the region.

JP 2014-154666 A

  The organic EL element is a surface light source, and the light emitting device often has planarity such as a plate shape or a sheet shape. Further, it is known to form a flexible light-emitting device by using a flexible substrate. On the other hand, since it has flatness, even if it does not have flexibility, the light emitting device may unintentionally be stressed in the direction of bending the light emitting device from the outside. When a bending stress is applied to the substrate of the light emitting portion having the conductive portion as the auxiliary electrode of the first electrode, and the substrate is bent, the substrate is bent starting from the auxiliary electrode having relatively high rigidity. In that case, a load is applied to the first electrode, the organic layer, the auxiliary electrode, the second electrode, and the like. Among them, the largest stress is applied to the auxiliary electrode which is the starting point of bending and the peripheral layer. When the second electrode is formed on the surface, the second electrode cannot withstand this stress, and cracks (cracks) are generated, or the defect is generated. For this reason, there is a possibility that the second electrode peels from the organic layer from the defective portion. In contrast, when the second electrode is formed in a stripe shape (stripe shape) as described in Patent Document 1, even if the substrate is bent in the stripe direction, the second electrode is difficult to peel from the organic layer.

  On the other hand, when the organic layer and the second electrode are formed in a stripe shape as described in Patent Document 1, a portion of the light emitting portion located between these stripes does not emit light. In this case, the ratio of the area of the light emitting region to the substrate becomes small.

  As a problem to be solved by the present invention, in a light emitting device having an auxiliary electrode, even if the substrate is bent, the second electrode is prevented from being defective or peeled off from the organic layer, while the area of the light emitting region relative to the substrate is reduced. One example is to prevent the ratio from becoming small.

The invention according to claim 1 is a substrate;
A light emitting unit formed on the substrate and having a first electrode, a second electrode, and an organic layer located between the first electrode and the second electrode;
A conductive part located between the substrate and the organic layer and electrically connected to the first electrode;
Have
The first electrode and the organic layer are also formed in a region overlapping the conductive part,
At least a part of a region overlapping with the conductive portion in the upper part of the organic layer is a light emitting device that is a non-formed region where the second electrode is not formed.

It is a top view which shows the structure of the light-emitting device which concerns on embodiment. It is the figure which removed the 2nd electrode from FIG. It is the figure which removed the insulating layer and the organic layer from FIG. It is AA sectional drawing of FIG. It is BB sectional drawing of FIG. It is a figure which shows the 1st example of the figure which expanded the area | region enclosed with the dotted line (alpha) of FIG. FIG. 6 is a diagram showing a second example of an enlarged view of a region surrounded by a dotted line α in FIG. 5. FIG. 6 is a diagram illustrating a third example of an enlarged view of a region surrounded by a dotted line α in FIG. 5. FIG. 6 is a diagram showing a fourth example of an enlarged view of a region surrounded by a dotted line α in FIG. 5. FIG. 11 is a cross-sectional view for explaining a configuration of a light emitting device according to Modification 1. 12 is a plan view showing a configuration of a light emitting device according to Modification 2. FIG.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In all the drawings, the same reference numerals are given to the same components, and the description will be omitted as appropriate.

  FIG. 1 is a plan view showing a configuration of a light emitting device 10 according to the embodiment. 2 is a diagram in which the second electrode 130 is removed from FIG. 1, and FIG. 3 is a diagram in which the insulating layer 150 and the organic layer 120 are removed from FIG. 4 is a cross-sectional view taken along the line AA in FIG. 1, and FIG. 5 is a cross-sectional view taken along the line BB in FIG. The light emitting device 10 includes a substrate 100, a light emitting unit 140, and a conductive unit 190. The light emitting unit 140 is formed on the substrate 100 and includes a first electrode 110, an organic layer 120, and a second electrode 130. The organic layer 120 is located between the first electrode 110 and the second electrode 130. The conductive part 190 is located between the substrate 100 and the organic layer 120 and is electrically connected to the first electrode 110. The first electrode 110 and the organic layer 120 are also formed in a region overlapping with the conductive portion 190. In addition, at least a part of a region overlapping the conductive portion 190 in the upper part (for example, the upper surface) of the organic layer 120 is a non-formation region 134 where the second electrode 130 is not formed. Details will be described below.

When the light-emitting device 10 is a bottom emission type described later, the substrate 100 is formed of a light-transmitting material such as glass or a light-transmitting resin. However, when the light emitting device 10 is a top emission type described later, the substrate 100 may be formed of a material that does not have translucency. The substrate 100 is, for example, a polygon such as a rectangle. Here, the substrate 100 may have flexibility. In the case where the substrate 100 has flexibility, the thickness of the substrate 100 is, for example, not less than 10 μm and not more than 1000 μm. In particular, when the substrate 100 is made of a glass material and has flexibility, the thickness of the substrate 100 is, for example, 200 μm or less. In the case where the substrate 100 is made of a resin material and is flexible, the material of the substrate 100 includes, for example, PEN (polyethylene naphthalate), PES (polyethersulfone), PET (polyethylene terephthalate), or polyimide. Is formed. In the case where the substrate 100 includes a resin material, an inorganic barrier film such as SiN _x or SiON is formed on at least the light emitting surface (preferably both surfaces) of the substrate 100 in order to suppress moisture from passing through the substrate 100. ing.

  A light emitting unit 140 is formed on the substrate 100. The light emitting unit 140 has a structure for generating surface light emission, for example, an organic EL element. This organic EL element has a configuration in which a first electrode 110, an organic layer 120, and a second electrode 130 are laminated in this order.

  The first electrode 110 is a transparent electrode having optical transparency. The transparent conductive material constituting the transparent electrode is a metal-containing material, for example, a metal oxide such as ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), IWZO (Indium Tungsten Zinc Oxide), or ZnO (Zinc Oxide). is there. The thickness of the first electrode 110 is, for example, not less than 10 nm and not more than 500 nm. The first electrode 110 is formed using, for example, a sputtering method or a vapor deposition method. The first electrode 110 may be a carbon nanotube or a conductive organic material such as PEDOT / PSS.

  The second electrode 130 is made of, for example, a metal selected from the first group consisting of Al, Au, Ag, Pt, Mg, Sn, Zn, and In or an alloy of a metal selected from the first group. Contains a metal layer. In this case, the second electrode 130 has a light shielding property. The thickness of the second electrode 130 is, for example, not less than 10 nm and not more than 500 nm. However, the second electrode 130 may be formed using the material exemplified as the material of the first electrode 110. The second electrode 130 is formed using, for example, a sputtering method or a vapor deposition method.

  Note that the materials of the first electrode 110 and the second electrode 130 described above are used when light is transmitted through the substrate 100, that is, when light emission from the light emitting device 10 is performed through the substrate 100 (that is, bottom emission type). It is an example. In other cases, light may pass through the side opposite to the substrate 100. That is, the light emission from the light emitting device 10 is performed without passing through the substrate 100 (top emission type). In the top emission type, one of two types of stacked structures of a reverse product type and a forward product type can be adopted. In the reverse product type, the material of the first electrode 110 and the material of the second electrode 130 are opposite to those of the bottom emission type. That is, the material of the second electrode 130 is used as the material of the first electrode 110, and the material of the first electrode 110 is used as the material of the second electrode 130. On the other hand, in the sequential product type, the material of the first electrode 110 is formed on the material of the second electrode 130, the organic layer 120 is further formed thereon, and the second electrode 130 is further formed thinly thereon. Thus, the light is extracted from the side opposite to the substrate 100. The material for forming the thin film is, for example, the material exemplified as the material of the second electrode 130 or an MgAg alloy. When the second electrode 130 is formed of Al or Ag, the thickness of the second electrode 130 is preferably 30 nm or less. The light emitting device 10 according to the present embodiment may be of any structure of a bottom emission type and the two types of top emission types described above.

  The organic layer 120 has a configuration in which, for example, a hole injection layer, a light emitting layer, and an electron injection layer are stacked in this order. A hole transport layer may be formed between the hole injection layer and the light emitting layer. In addition, an electron transport layer may be formed between the light emitting layer and the electron injection layer. A hole blocking layer may be formed between the light emitting layer and the electron transport layer. The organic layer 120 may have a multi-photon structure having a charge generation layer between a plurality of light-emitting layers and the plurality of light-emitting layers, such as a so-called tandem structure. In the case of the multi-photon structure, compared with the case where the stacked structure is not so-called (so-called single structure), the thickness of the organic layer 120 is increased or the number of layers is increased, so that uneven film formation is likely to occur. If the organic layer 120 is continuously formed on the insulating layer 150 to be described later and where the insulating layer is not formed, the height difference increases, and the flatness of the second electrode formed thereon is further reduced. It will be. The organic layer 120 may be formed by a vapor deposition method. In addition, at least one layer of the organic layer 120, for example, a layer in contact with the first electrode may be formed by a coating method such as an inkjet method, a printing method, or a spray method. In this case, the remaining layers of the organic layer 120 are formed by vapor deposition. Moreover, all the layers of the organic layer 120 may be formed using the apply | coating method.

  The edge of the first electrode 110 is covered with an insulating layer 150. The insulating layer 150 is made of, for example, a photosensitive resin material such as polyimide, and surrounds a portion of the first electrode 110 that becomes a light emitting region of the light emitting unit 140. By providing the insulating layer 150, it is possible to suppress a short circuit between the first electrode 110 and the second electrode 130 at the edge of the first electrode 110. In addition, the formation region of the organic layer 120 can be defined by forming the insulating layer 150. Thereby, the luminescent color of the adjacent organic layer 120 can be varied. The insulating layer 150 is formed by applying a resin material to be the insulating layer 150 and then exposing and developing the resin material. This step is performed, for example, after forming the first electrode 110 and before forming the organic layer 120.

  The light emitting device 10 has a first terminal 112 and a second terminal 132. The first terminal 112 is electrically connected to the first electrode 110, and the second terminal 132 is electrically connected to the second electrode 130. For example, the first terminal 112 and the second terminal 132 include a layer formed of the same material as that of the first electrode 110. A lead wiring may be provided between the first terminal 112 and the first electrode 110. In addition, a lead wiring may be provided between the second terminal 132 and the second electrode 130.

  Further, the light emitting device 10 has a conductive portion 190. The conductive part 190 is in contact with the first electrode 110. The conductive portion 190 is made of a material having a lower resistance than that of the first electrode 110, such as a metal. For this reason, the conductive part 190 functions as an auxiliary electrode of the first electrode 110, and as a result, the apparent resistance of the first electrode 110 is lowered. Further, the conductive portion 190 does not transmit light. However, when the conductive portion 190 is thin, the conductive portion 190 may transmit a little light. The conductive portion 190 is a film in which, for example, a Mo alloy, an Al alloy, and a Mo alloy are stacked in this order. However, the conductive portion 190 may be formed using another conductive material such as Al, Ag, or Cu, or may be formed by applying conductive particles using an inkjet method. Moreover, the thickness of the electroconductive part 190 is 100 nm or more and 1000 nm or less, for example.

In the example shown in FIGS. 1 and 3, the conductive portion 190 extends linearly in the first direction. In the examples shown in these drawings, the extending direction (first direction) of the conductive portion 190 is a direction connecting the first terminal 112 and the second terminal 132. However, the extending direction of the conductive portion 190 and the formation position of the first terminal 112 or the second terminal 132 are not limited to this. The light emitting device 10 has a plurality of conductive portions 190. The plurality of conductive portions 190 are parallel to each other. The width w ₁ (see FIG. 3) of the conductive portion 190 is, for example, 15 μm or more and 200 μm or less. Further, (see FIG. 3) spacing _{w 2} of the conductive portion 190 adjacent is, for example, 0.5mm or 5mm or less. In addition, in the BB cross section, the organic layer 120 and the second electrode 130 described above are formed continuously between the adjacent conductive portions 190, in other words, in the entire region between the adjacent conductive portions 190. .

  In the example shown in FIGS. 3 and 5, the conductive portion 190 is formed on the first electrode 110. In other words, the conductive part 190 is located between the first electrode 110 and the organic layer 120, and the lower surface of the conductive part 190 is in contact with the first electrode 110. The conductive portion 190 is covered with the insulating layer 150. Thereby, it can suppress that the electroconductive part 190 and the 2nd electrode 130 are short-circuited.

  As shown in FIGS. 1 and 5, in the cross section in the direction (second direction: left and right direction in FIGS. 1 and 5) that intersects the direction in which the conductive portion 190 extends, the conductive portion of the upper surface of the organic layer 120 is conductive. At least a part of the region overlapping with the portion 190 is a non-formed region 134 where the second electrode 130 is not formed. The non-formation region 134 extends along the conductive portion 190 in the same direction as the conductive portion 190 (the vertical direction in FIG. 1, the front / back direction in FIG. 5). However, for example, when the end portion of the conductive portion 190 extends to the outside of the second electrode 130 (for example, a region overlapping the insulating layer 150 or a region overlapping the first terminal 112), the conductive portion 190 extends. The non-formation region 134 may not be formed in a portion overlapping the end portion of the conductive portion 190 in the direction, in other words, the second electrode 130 may be formed.

  In the example shown in FIGS. 1 and 5, the non-formation region 134 is formed for all of the plurality of conductive portions 190. However, the second electrode 130 may not be formed on at least one conductive part 190. In this case, a location that is a starting point (guide) for bending the light emitting device 10 at a specified location can be defined.

  FIG. 6 is a first example of an enlarged view of a region surrounded by a dotted line α in FIG. In the example shown in this drawing, the width of the non-formation region 134 is wider than the width of the conductive portion 190. For this reason, the second electrode 130 does not overlap the conductive portion 190. The distance from the edge of the second electrode 130 to the edge of the second electrode 130 is 110% or more and 1 mm or less of the width of the conductive portion 190. The distance t from the edge of the conductive part 190 to the edge of the second electrode 130 is 5% or more, preferably 10% or more of the width of the conductive part 190. Here, the upper limit of the distance t is obtained from the maximum width (maximum 1 mm) of the distance from the edge of the second electrode 130 to the edge of the second electrode 130. Preferably, the above-described distance t is 100 μm or less, or 40% or less of the width of the conductive portion 190. In this figure, the thickness of the edge of the second electrode 130 is substantially the same as the thickness of the other part of the second electrode 130. Note that the edge of the second electrode 130 may or may not overlap the insulating layer 150. Further, the center of the non-formation region 134 and the center of the conductive portion 190 may be different.

  FIG. 7 is a second example of an enlarged view of a region surrounded by a dotted line α in FIG. In the example shown in this figure, the width of the non-formation region 134 is narrower than the width of the conductive portion 190. For this reason, at least one of the two second electrodes 130 sandwiching the non-formation region 134 overlaps the conductive portion 190. In the example shown in the figure, both of the two second electrodes 130 overlap with the conductive portion 190. The distance from the edge of the second electrode 130 to the edge of the second electrode 130 is not less than 10% of the width of the conductive part 190 and not more than the width of the conductive part 190. The distance t from the edge of the conductive part 190 to the edge of the second electrode 130 is 5% or more, preferably 10% or more of the width of the conductive part 190. Here, the upper limit of the distance t may be equal to or less than the maximum width w1 of the conductive portion 190 (for example, 200 μm or less), and is preferably 40% or less of the width of the conductive portion 190. In addition, the shape of the edge of the second electrode 130 in this drawing is the same as in the example shown in FIG. 6, and the center of the non-formation region 134 and the center of the conductive portion 190 may be different.

  FIG. 8 is a third example of an enlarged view of a region surrounded by a dotted line α in FIG. The example shown in this figure is the same as the example shown in FIG. 7 except for the shape of the edge of the second electrode 130. In the example shown in this figure, the thickness in the vicinity of the edge of the second electrode 130 is gradually reduced as it approaches the edge. Thereby, the stress applied to the upper layer of the auxiliary electrode 190 when the light emitting device 10 is bent can be dispersed.

  FIG. 9 is a fourth example of an enlarged view of a region surrounded by a dotted line α in FIG. The example shown in this figure is the same as the example shown in FIG. 7 except for the shape of the edge of the second electrode 130. In the example shown in the figure, the thickness of the edge of the second electrode 130 is thicker than other portions. And it gets thinner gradually as you move away from the edge. Thereby, the resistance of the edge of the second electrode 130 can be lowered, and the luminance at the edge of the conductive part 190 which is a non-light emitting region can be increased.

  In the example shown in FIG. 6, the shape of the edge of the second electrode 130 may be the same as the example shown in FIG. 8 or FIG.

  In addition, the light emitting unit 140 is sealed with a sealing member or a sealing film (both not shown).

  The sealing member is formed using, for example, a metal such as glass or aluminum, or a resin, and has a polygonal shape or a circular shape similar to that of the substrate 100 and has a shape in which a concave portion is provided at the center. The edge of the sealing member is fixed to the substrate 100 with an adhesive. Thereby, the space surrounded by the sealing member and the substrate 100 is sealed. And the light emission part 140 is located in this sealed space.

  The sealing film is formed of, for example, an insulating material, more specifically, an inorganic material such as silicon oxide, silicon oxynitride, silicon nitride, aluminum oxide, or titanium oxide. The thickness of the sealing film is preferably 300 nm or less. The thickness of the sealing film is, for example, 50 nm or more. The sealing film is formed using, for example, an ALD (Atomic Layer Deposition) method, but may be formed using other film forming methods such as a CVD method or a sputtering method.

  Next, a method for manufacturing the light emitting device 10 will be described. First, the first electrode 110 is formed on the substrate 100. In this step, the first terminal 112 and the second terminal 132 are also formed. Next, the conductive portion 190, the insulating layer 150, and the organic layer 120 are formed in this order. Next, the second electrode 130 is formed. The second electrode 130 is formed in the above-described pattern by using, for example, an evaporation method using a mask (for example, a vacuum evaporation method).

  Next, the light emitting unit 140 is sealed using a sealing member or a sealing film. Thereafter, a conductive member (for example, a bonding wire, a lead member, or an FPC (Flexible Printed Circuit)) is connected to the first terminal 112 and the second terminal 132.

  As described above, according to the present embodiment, the second electrode 130 is not formed on at least a part of the portion overlapping the conductive portion 190. For this reason, even if stress is applied to the substrate 100 and the substrate 100 and the light emitting unit 140 are bent in the same direction as the conductive unit 190, the compressive stress or tensile stress applied to the second electrode 130 is reduced. Therefore, it is possible to suppress the second electrode 130 from being defective or peeling from the organic layer 120.

  The first electrode 110 and the organic layer 120 are also formed in a region overlapping with the conductive portion 190. For this reason, in the organic layer 120 that is not sandwiched between the first electrode 110 and the second electrode 130, a current flows through a portion located near the edge of the second electrode 130, and as a result, this portion emits light. Therefore, it is possible to suppress a reduction in the ratio of the effective area of the light emitting unit 140 to the substrate 100 (the area of the region that actually emits light).

  Further, a portion of the base of the organic layer 120 that overlaps with the conductive portion 190 is convex. Therefore, the portion of the organic layer 120 that overlaps with the conductive portion 190 tends to be thinner than the other portions. As the organic layer 120 becomes thinner, the electric field concentrates on this portion of the organic layer 120, and leakage tends to occur. On the other hand, in the present embodiment, the second electrode 130 is not formed on at least a part of the portion overlapping the conductive portion 190. For this reason, since the 2nd electrode 120 is not formed in the upper part of the part where the electric field of the organic layer 120 concentrates, it can suppress that the above-mentioned leak arises.

(Modification 1)
FIG. 10 is a cross-sectional view for explaining the configuration of the light emitting device 10 according to the first modification, and corresponds to FIG. 7 in the embodiment. The light emitting device 10 according to this modification is implemented except that the conductive portion 190 is located between the substrate 100 and the first electrode 110 and that the first electrode 110 is not covered with the insulating layer 150. It is the structure similar to the light-emitting device 10 which concerns on a form.

  In addition, the position of the edge of the 2nd electrode 130 on the basis of the electroconductive part 190 is the same as that of either of FIGS. 6-9 of embodiment.

  Also in this modification, the second electrode 130 is not formed on at least a part of the portion overlapping the conductive portion 190. For this reason, even if stress is applied to the substrate 100 and the substrate 100 and the light emitting unit 140 are bent, the compressive stress or tensile stress applied to the second electrode 130 is reduced. Therefore, it can suppress that the 2nd electrode 130 peels from the organic layer 120. FIG.

  Further, when the conductive portion 190 is disposed between the substrate 100 and the first electrode 110, the organic layer 120 is in contact with both the first electrode 110 and the second electrode 130 even in a region overlapping with the conductive portion 190. For this reason, when the second electrode 130 is formed in the entire region overlapping with the conductive portion 190, a current flows between the first electrode 110 and the second electrode 130 also in this overlapping portion. On the other hand, since the conductive portion 190 has a light shielding property, light emitted from a region of the organic layer 120 that overlaps the vicinity of the central portion of the conductive portion 190 in the width direction of the conductive portion 190 is transmitted to the outside of the light emitting device 10. Difficult to radiate. That is, the region where the current flows in the organic layer 120 is different from the region contributing to light emission to the outside. In this case, the efficiency (light emission efficiency) of converting the electricity of the light emitting device 10 into light is substantially reduced. On the other hand, in the present embodiment, the second electrode 130 is not formed on at least a part of the portion overlapping the conductive portion 190. For this reason, the above-mentioned fall of the luminous efficiency can be suppressed.

(Modification 2)
FIG. 11 is a plan view showing a configuration of a light emitting device 10 according to Modification Example 2, and corresponds to FIG. 1 in the embodiment. The light emitting device 10 according to this modification has the same configuration as that of the light emitting device 10 according to the embodiment or modification 1 except for the layout of the second electrode 130.

  In this modification, the second electrode 130 has a comb shape. A region located between the teeth of the comb overlaps with the conductive portion 190.

  Also according to the present modification, as in the embodiment or the first modification, it is possible to suppress the second electrode 130 from peeling from the organic layer 120, and the ratio of the effective area of the light emitting unit 140 to the substrate 100 is reduced. Can be suppressed.

  As mentioned above, although embodiment and the Example were described with reference to drawings, these are illustrations of this invention and can also employ | adopt various structures other than the above.

DESCRIPTION OF SYMBOLS 10 Light-emitting device 100 Board | substrate 110 1st electrode 120 Organic layer 130 2nd electrode 134 Non-formation area | region 140 Light-emitting part 150 Insulating layer 190 Conductive part

Claims (7)

A substrate,
A light emitting unit formed on the substrate and having a first electrode, a second electrode, and an organic layer located between the first electrode and the second electrode;
A conductive part located between the substrate and the organic layer and electrically connected to the first electrode;
Have
The first electrode and the organic layer are also formed in a region overlapping the conductive part,
A light-emitting device in which at least a part of a region overlapping with the conductive portion in the upper part of the organic layer is a non-formed region where the second electrode is not formed. The light-emitting device according to claim 1.
A plurality of the conductive portions are formed,
The light emitting device in which the organic layer and the second electrode are continuously formed in a region between adjacent conductive parts. The light-emitting device according to claim 1 or 2,
The conductive portion extends in a first direction;
In the second direction intersecting with the first direction, the second electrode does not overlap the conductive portion, and the distance from the edge of the conductive portion to the edge of the second electrode is equal to that of the conductive portion. A light emitting device having a width of 10% to 100 μm. The light-emitting device according to claim 1 or 2,
The conductive portion extends in a first direction;
In the second direction intersecting the first direction, the edge of the second electrode overlaps the conductive part, and the distance from the edge of the conductive part to the edge of the second electrode is the width of the conductive part. 5% or more of the light emitting device having a width of the conductive portion or less. In the light-emitting device as described in any one of Claims 1-4,
The conductive portion is located between the first electrode and the organic layer;
Furthermore, the light-emitting device which has the insulating layer which covers the said electroconductive part between the said 1st electrode and the said organic layer. In the light-emitting device as described in any one of Claims 1-4,
The light emitting device, wherein the conductive portion is located between the substrate and the first electrode. The light-emitting device according to claim 6.
The substrate is a light emitting device having flexibility.

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